Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (124868) > Сторінка 763 з 2082
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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IQFH68N06NM5ATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100VPackaging: Tape & Reel (TR) Package / Case: 12-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 460A (Tc) Rds On (Max) @ Id, Vgs: 0.68mOhm @ 100A, 10V Power Dissipation (Max): 3W (Ta), 273W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 217µA Supplier Device Package: PG-TSON-12-U01 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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IQFH68N06NM5ATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100VPackaging: Cut Tape (CT) Package / Case: 12-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 460A (Tc) Rds On (Max) @ Id, Vgs: 0.68mOhm @ 100A, 10V Power Dissipation (Max): 3W (Ta), 273W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 217µA Supplier Device Package: PG-TSON-12-U01 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 30 V |
на замовлення 209 шт: термін постачання 21-31 дні (днів) |
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IRF60DM206 | Infineon Technologies |
Description: MOSFET N-CH 60V 130A DIRECTFETPackaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric ME Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 150µA Supplier Device Package: DirectFET™ Isometric ME Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6530 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 4800 шт В кошику од. на суму грн. | ||||||||||||||
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IRF60DM206 | Infineon Technologies |
Description: MOSFET N-CH 60V 130A DIRECTFETPackaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric ME Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 150µA Supplier Device Package: DirectFET™ Isometric ME Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6530 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SLB9673XU20FW2624XTMA1 | Infineon Technologies |
Description: SLB9673XU20FW2624XTMA1Packaging: Tape & Reel (TR) Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V Controller Series: OPTIGA™ TPM Program Memory Type: NVM (51kB) Applications: Trusted Platform Module (TPM) Core Processor: 32-Bit Supplier Device Package: PG-UQFN-32-1 Number of I/O: 3 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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SLB9673XU20FW2624XTMA1 | Infineon Technologies |
Description: SLB9673XU20FW2624XTMA1Packaging: Cut Tape (CT) Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V Controller Series: OPTIGA™ TPM Program Memory Type: NVM (51kB) Applications: Trusted Platform Module (TPM) Core Processor: 32-Bit Supplier Device Package: PG-UQFN-32-1 Number of I/O: 3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SLB9673AU20FW2624XTMA1 | Infineon Technologies |
Description: SLB9673AU20FW2624XTMA1Packaging: Cut Tape (CT) Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V Controller Series: OPTIGA™ TPM Program Memory Type: NVM (51kB) Applications: Trusted Platform Module (TPM) Core Processor: 32-Bit Supplier Device Package: PG-UQFN-32-1 Number of I/O: 3 |
на замовлення 1326 шт: термін постачання 21-31 дні (днів) |
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CYT4DNJBHCQ1BZSGS | Infineon Technologies |
Description: TRAVEO-2 CLUST.2.5DGRAPHCore Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F EEPROM Size: 128K x 8 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 640K x 8 Program Memory Size: 6.19MB (6.19M x 8) Speed: 100MHz, 320MHz Mounting Type: Surface Mount Package / Case: 327-LFBGA Packaging: Tray Number of I/O: 168 Supplier Device Package: 327-FBGA (17x17) Peripherals: DMA, I2S, LVD, Temp Sensor, WDT Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Tri-Core Data Converters: A/D 48x12b SAR |
товару немає в наявності |
Мінімальне замовлення: 900 шт В кошику од. на суму грн. | ||||||||||||||
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CYT4DNJBLCQ1BZSGS | Infineon Technologies |
Description: TRAVEO-2 CLUST.2.5DGRAPHMounting Type: Surface Mount Package / Case: 327-LFBGA Packaging: Tray Number of I/O: 168 Supplier Device Package: 327-FBGA (17x17) Peripherals: DMA, I2S, LVD, Temp Sensor, WDT Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Tri-Core Data Converters: A/D 48x12b SAR Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F EEPROM Size: 128K x 8 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 640K x 8 Program Memory Size: 6.19MB (6.19M x 8) Speed: 100MHz, 320MHz |
товару немає в наявності |
Мінімальне замовлення: 900 шт В кошику од. на суму грн. | ||||||||||||||
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IMT65R020M2HXUMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFETPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 105A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V Power Dissipation (Max): 440W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 9.5mA Supplier Device Package: PG-HSOF-8-2 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IMT65R020M2HXUMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFETPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 105A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V Power Dissipation (Max): 440W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 9.5mA Supplier Device Package: PG-HSOF-8-2 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V |
на замовлення 2577 шт: термін постачання 21-31 дні (днів) |
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F410MR20W3M1HB11BPSA1 | Infineon Technologies |
Description: EASY STANDARD PLUSPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 2000V (2kV) Current - Continuous Drain (Id) @ 25°C: 95A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 1200V Rds On (Max) @ Id, Vgs: 13.3mOhm @ 120A, 18V Gate Charge (Qg) (Max) @ Vgs: 470nC @ 3V Vgs(th) (Max) @ Id: 5.15V @ 68mA |
на замовлення 17 шт: термін постачання 21-31 дні (днів) |
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CHL8214-01CRT | Infineon Technologies |
Description: IC REG BUCK 40VQFNPackaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Output Type: PWM Mounting Type: Surface Mount Function: Step-Down Operating Temperature: 0°C ~ 85°C Output Configuration: Positive Frequency - Switching: 200kHz ~ 1.2MHz Topology: Buck Voltage - Supply (Vcc/Vdd): 3.3V Supplier Device Package: PG-VQFN-40-903 Synchronous Rectifier: No Control Features: Enable Serial Interfaces: I2C Output Phases: 4 Clock Sync: No Number of Outputs: 5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY7C1061GE-10BVXI | Infineon Technologies |
Description: IC SRAM 16MBIT PARALLEL 48VFBGAPackaging: Tray Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-VFBGA (6x8) Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 1M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 960 шт В кошику од. на суму грн. | ||||||||||||||
| T501N65TOHXPSA1 | Infineon Technologies |
Description: SCR MODULE 7KV 1000A TO-200AC Packaging: Tray Package / Case: TO-200AC Mounting Type: Clamp On Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 350 mA Current - Gate Trigger (Igt) (Max): 350 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 13500A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 890 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (RMS)) (Max): 1000 A Voltage - Off State: 7 kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IGLR65R140D2XUMA1 | Infineon Technologies |
Description: GANFET N-CH 650V 13A 8TDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 3.1A Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 1mA Supplier Device Package: PG-TSON-8-8 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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IGLR65R140D2XUMA1 | Infineon Technologies |
Description: GANFET N-CH 650V 13A 8TDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 3.1A Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 1mA Supplier Device Package: PG-TSON-8-8 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 400 V |
на замовлення 3975 шт: термін постачання 21-31 дні (днів) |
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IGT65R140D2ATMA1 | Infineon Technologies |
Description: GANFET N-CH 650V 13A 8PSFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 1mA Supplier Device Package: PG-HSOF-8-3 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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IGT65R140D2ATMA1 | Infineon Technologies |
Description: GANFET N-CH 650V 13A 8PSFNPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 1mA Supplier Device Package: PG-HSOF-8-3 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 400 V |
на замовлення 1641 шт: термін постачання 21-31 дні (днів) |
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CY14ME064J2-SXQ | Infineon Technologies |
Description: IC NVSRAM 64KBIT I2C 8SOICDigiKey Programmable: Not Verified Memory Organization: 8K x 8 Memory Interface: I2C Supplier Device Package: 8-SOIC Memory Format: NVSRAM Clock Frequency: 3.4 MHz Technology: NVSRAM (Non-Volatile SRAM) Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 64Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 970 шт В кошику од. на суму грн. | ||||||||||||||
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FF600R17ME4PBOSA1 | Infineon Technologies |
Description: IGBT MODULE 1700V 600A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 48 nF @ 25 V |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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ETT630N18P60XPSA1 | Infineon Technologies |
Description: SCR MODULE 1.8KV 700A MODULEVoltage - Off State: 1.8 kV Current - On State (It (RMS)) (Max): 700 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (AV)) (Max): 628 A Number of SCRs, Diodes: 2 SCRs Current - Non Rep. Surge 50, 60Hz (Itsm): 20000A @ 50Hz Current - Gate Trigger (Igt) (Max): 250 mA Current - Hold (Ih) (Max): 300 mA Structure: Series Connection - All SCRs Operating Temperature: -40°C ~ 135°C (TC) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||||||
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CY95F633HPMC-G-UNE2 | Infineon Technologies |
Description: IC MCU 8BIT 12KB 32LQFPPackaging: Tray Package / Case: 32-LQFP Mounting Type: Surface Mount Speed: 16.25MHz Program Memory Size: 12KB (12K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-8FX Data Converters: A/D 8x8/10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V Connectivity: I2C, LINbus, SIO, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 32-LQFP (7x7) Number of I/O: 28 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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CY95F633HPMC-G-UNERE2 | Infineon Technologies |
Description: IC MM MCU 32LQFPPackaging: Tape & Reel (TR) Package / Case: 32-LQFP Mounting Type: Surface Mount Speed: 16.25MHz Program Memory Size: 12KB (12K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-8FX Data Converters: A/D 8x8/10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V Connectivity: I2C, LINbus, SIO, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 32-LQFP (7x7) Number of I/O: 28 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY95F633HPMC-G-UNERE2 | Infineon Technologies |
Description: IC MM MCU 32LQFPPackaging: Cut Tape (CT) Package / Case: 32-LQFP Mounting Type: Surface Mount Speed: 16.25MHz Program Memory Size: 12KB (12K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-8FX Data Converters: A/D 8x8/10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V Connectivity: I2C, LINbus, SIO, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 32-LQFP (7x7) Number of I/O: 28 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S25FL256LAGMFB001 | Infineon Technologies |
Description: IC FLASH 256MBIT SPI/QUAD 16SOICTechnology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 256Mbit Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Packaging: Tube Qualification: AEC-Q100 DigiKey Programmable: Not Verified Memory Organization: 32M x 8 Memory Interface: SPI - Quad I/O, QPI Grade: Automotive Supplier Device Package: 16-SOIC Memory Format: FLASH Clock Frequency: 133 MHz |
товару немає в наявності |
Мінімальне замовлення: 705 шт В кошику од. на суму грн. | ||||||||||||||
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S25FL256LAGMFB000 | Infineon Technologies |
Description: IC FLASH 256MBIT SPI/QUAD 16SOICSupplier Device Package: 16-SOIC Memory Format: FLASH Clock Frequency: 133 MHz Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 256Mbit Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Packaging: Tray Qualification: AEC-Q100 DigiKey Programmable: Not Verified Memory Organization: 32M x 8 Memory Interface: SPI - Quad I/O, QPI Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 240 шт В кошику од. на суму грн. | ||||||||||||||
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CY91F526DWEPMC-GSE2 | Infineon Technologies |
Description: IC MCU 32BT 1.0625MB FLSH 80LQFP DigiKey Programmable: Not Verified Number of I/O: 56 Supplier Device Package: 80-LQFP (12x12) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 32x12b SAR; D/A 1x8b Core Processor: FR81S EEPROM Size: 64K x 8 Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 136K x 8 Program Memory Size: 1.0625MB (1.0625M x 8) Speed: 80MHz Mounting Type: Surface Mount Package / Case: 80-LQFP Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 1190 шт В кошику од. на суму грн. | ||||||||||||||
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CY91F526FSCPMC-GSE1 | Infineon Technologies |
Description: IC MCU 32B 1.0625MB FLSH 100LQFPDigiKey Programmable: Not Verified Number of I/O: 76 Supplier Device Package: 100-LQFP (14x14) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 37x12b; D/A 2x8b Core Processor: FR81S EEPROM Size: 64K x 8 Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 136K x 8 Program Memory Size: 1.0625MB (1.0625M x 8) Speed: 80MHz Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 900 шт В кошику од. на суму грн. | ||||||||||||||
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CY91F526FSCPMC-GSE2 | Infineon Technologies |
Description: IC MCU 32B 1.0625MB FLSH 100LQFPDigiKey Programmable: Not Verified Number of I/O: 76 Supplier Device Package: 100-LQFP (14x14) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 37x12b; D/A 2x8b Core Processor: FR81S EEPROM Size: 64K x 8 Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 136K x 8 Program Memory Size: 1.0625MB (1.0625M x 8) Speed: 80MHz Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 900 шт В кошику од. на суму грн. | ||||||||||||||
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CYPD7291-68LDXST | Infineon Technologies |
Description: CCG7DPackaging: Cut Tape (CT) Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Interface: I2C, SPI, UART, USB RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 4V ~ 24V Controller Series: EZ-PD™ Program Memory Type: FLASH (128kB), ROM (32kB) Applications: USB Type C Core Processor: ARM® Cortex®-M0 Supplier Device Package: 68-QFN (10x10) Grade: Automotive Number of I/O: 19 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IPP089N15NM6AKSA1 | Infineon Technologies |
Description: TRENCH >=100VPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 88A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 32A, 15V Power Dissipation (Max): 3.8W (Ta), 158W (Tc) Vgs(th) (Max) @ Id: 4V @ 73µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 75 V |
на замовлення 748 шт: термін постачання 21-31 дні (днів) |
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TLE9869QXA20XUMA1 | Infineon Technologies |
Description: IC MOTOR DRIVER 48VQFNMounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Tape & Reel (TR) Qualification: AEC-Q100 DigiKey Programmable: Not Verified Number of I/O: 10 Grade: Automotive Supplier Device Package: PG-VQFN-48-29 Core Processor: ARM® Cortex®-M3 Program Memory Type: FLASH (128kB) Voltage - Supply: 5.5V ~ 28V Operating Temperature: -40°C ~ 150°C RAM Size: 6K x 8 Interface: LIN, SSI, UART |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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TLE9835QXXUMA1 | Infineon Technologies |
Description: IC MOTOR DRIVER 48VQFNDigiKey Programmable: Not Verified Number of I/O: 11 Grade: Automotive Supplier Device Package: PG-VQFN-48-29 Core Processor: XC800 Program Memory Type: FLASH (64kB) Voltage - Supply: 3V ~ 27V Operating Temperature: -40°C ~ 150°C (TJ) RAM Size: 3.25K x 8 Interface: LIN, SSI, UART Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE9845QXXUMA1 | Infineon Technologies |
Description: EMBEDDED POWERPackaging: Bulk Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: LIN, SSI, UART RAM Size: 4K x 8 Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 3V ~ 28V Program Memory Type: FLASH (48kB) Core Processor: ARM® Cortex®-M0 Supplier Device Package: PG-VQFN-48-31 Grade: Automotive Number of I/O: 10 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 87049 шт: термін постачання 21-31 дні (днів) |
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TLE9842QXXUMA2 | Infineon Technologies |
Description: EMBEDDED_POWERPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: LIN, SPI, SSC, UART RAM Size: 2K x 8 Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 3V ~ 28V Controller Series: TLE984x Program Memory Type: FLASH (36kB) Core Processor: ARM® Cortex®-M0 Supplier Device Package: PG-VQFN-48-79 Grade: Automotive Number of I/O: 10 Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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TLE98422QXXUMA2 | Infineon Technologies |
Description: EMBEDDED_POWERPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: LIN, SSI, UART RAM Size: 2K x 8 Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 3V ~ 28V Controller Series: TLE984x Program Memory Type: FLASH (40kB) Core Processor: ARM® Cortex®-M0 Supplier Device Package: PG-VQFN-48-79 Grade: Automotive Number of I/O: 10 Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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TLE9843QXXUMA2 | Infineon Technologies |
Description: EMBEDDED_POWEROperating Temperature: -40°C ~ 150°C (TJ) RAM Size: 4K x 8 Interface: LIN, SSI, UART Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Number of I/O: 10 Grade: Automotive Supplier Device Package: PG-VQFN-48-79 Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH (48kB) Controller Series: TLE984x Voltage - Supply: 3V ~ 28V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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AUIRFR8403 | Infineon Technologies |
Description: MOSFET N-CH 40V 100A DPAKPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V Power Dissipation (Max): 99W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: TO-252AA (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2656 шт: термін постачання 21-31 дні (днів) |
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XMC1302Q024F0032ABXTMA1 | Infineon Technologies |
Description: XMC1000Packaging: Tape & Reel (TR) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 32KB (32K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 13x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-VQFN-24-19 Number of I/O: 22 |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||||
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TD430N22KOFXPSA1 | Infineon Technologies |
Description: SCR MODULE 2.2KV 800A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 125°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 14000A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 430 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - On State (It (RMS)) (Max): 800 A Voltage - Off State: 2.2 kV |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||||||
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TD430N22KOFTIMHPSA1 | Infineon Technologies |
Description: SCR MODULE 2.2KV 800A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 14000A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 430 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - On State (It (RMS)) (Max): 800 A Voltage - Off State: 2.2 kV |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||||||
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TT430N22KOFXPSA1 | Infineon Technologies |
Description: SCR MODULE 2.2KV 800A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 125°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 14000A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 430 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - On State (It (RMS)) (Max): 800 A Voltage - Off State: 2.2 kV |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||||||
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XDPE192C3B0000XUMA1 | Infineon Technologies |
Description: IFX PRIMARION CNTRLLERPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Voltage - Output: 0.25V ~ 2.8V Mounting Type: Surface Mount Number of Outputs: 2 Voltage - Input: 12V Applications: Controller, AMD Supplier Device Package: PG-VQFN-48-63 |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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XDPE192C3B0000XUMA1 | Infineon Technologies |
Description: IFX PRIMARION CNTRLLERPackaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Voltage - Output: 0.25V ~ 2.8V Mounting Type: Surface Mount Number of Outputs: 2 Voltage - Input: 12V Applications: Controller, AMD Supplier Device Package: PG-VQFN-48-63 |
на замовлення 289 шт: термін постачання 21-31 дні (днів) |
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XDPE1A2G5B0000XUMA1 | Infineon Technologies |
Description: IFX PRIMARION CNTRLLERPackaging: Tape & Reel (TR) Package / Case: 56-VFQFN Exposed Pad Voltage - Output: 0.05V ~ 3.1V Mounting Type: Surface Mount Number of Outputs: 2 Applications: Controller, High Performance Processor Supplier Device Package: PG-VQFN-56 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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XDPE1A2G5B0000XUMA1 | Infineon Technologies |
Description: IFX PRIMARION CNTRLLERPackaging: Cut Tape (CT) Package / Case: 56-VFQFN Exposed Pad Voltage - Output: 0.05V ~ 3.1V Mounting Type: Surface Mount Number of Outputs: 2 Applications: Controller, High Performance Processor Supplier Device Package: PG-VQFN-56 |
на замовлення 1742 шт: термін постачання 21-31 дні (днів) |
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IPD047N03LF2SATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 71A TO-252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 71A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 40A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 30µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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IPD047N03LF2SATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 71A TO-252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 71A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 40A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 30µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V |
на замовлення 1564 шт: термін постачання 21-31 дні (днів) |
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BTM9011EPXUMA1 | Infineon Technologies |
Description: BTM9011EPXUMA1Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 9.2A Interface: SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 4.5V ~ 40V Technology: Power MOSFET Voltage - Load: 4.5V ~ 40V Supplier Device Package: PG-TSDSO-14 Motor Type - AC, DC: Brushed DC Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BTM9011EPXUMA1 | Infineon Technologies |
Description: BTM9011EPXUMA1Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 9.2A Interface: SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 4.5V ~ 40V Technology: Power MOSFET Voltage - Load: 4.5V ~ 40V Supplier Device Package: PG-TSDSO-14 Motor Type - AC, DC: Brushed DC Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3103 шт: термін постачання 21-31 дні (днів) |
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BSC085N025S G | Infineon Technologies |
Description: MOSFET N-CH 25V 14A/35A TDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 35A, 10V Power Dissipation (Max): 2.8W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2V @ 25µA Supplier Device Package: PG-TDSON-8-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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PTF141501E V1 | Infineon Technologies |
Description: RF MOSFET LDMOS 28V H-30260-2Packaging: Tray Package / Case: 2-Flatpack, Fin Leads Current Rating (Amps): 1µA Mounting Type: Surface Mount Frequency: 1.5GHz Power - Output: 150W Gain: 16.5dB Technology: LDMOS Supplier Device Package: H-30260-2 Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 1.5 A |
товару немає в наявності |
Мінімальне замовлення: 35 шт В кошику од. на суму грн. | ||||||||||||||
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CY95F128DPMC-GE1 | Infineon Technologies |
Description: IC MCU 8BIT 60KB FLASH 100LQFPPackaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 60KB (60K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-8FX Data Converters: A/D 12x8/10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.3V Connectivity: I2C, LINbus, SIO, UART/USART Peripherals: LCD, LVD, POR, PWM, WDT Supplier Device Package: 100-LQFP (14x14) Number of I/O: 87 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY95F633KPMC-G-SNE2 | Infineon Technologies |
Description: IC MCU 8BIT 12KB FLASH 32LQFPPackaging: Tray Package / Case: 32-LQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 12KB (12K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-8FX Data Converters: A/D 8x8/10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V Connectivity: I2C, LINbus, SIO, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 32-LQFP (7x7) Number of I/O: 29 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY95F633KNPMC-G-UNE2 | Infineon Technologies |
Description: IC MCU 8BIT 12KB FLASH 32LQFP Packaging: Tray Package / Case: 32-LQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 12KB (12K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-8FX Data Converters: A/D 8x8/10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V Connectivity: I2C, LINbus, SIO, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 32-LQFP (7x7) Number of I/O: 29 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MB95F128JBPMC-G-JNE1 | Infineon Technologies |
Description: IC MCU 8BIT 60KB FLASH 100LQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 60KB (60K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 105°C Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-8FX Data Converters: A/D 12x8/10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V Connectivity: I2C, LINbus, SIO, UART/USART Peripherals: LCD, LVD, POR, PWM, WDT Supplier Device Package: 100-LQFP (14x14) Number of I/O: 87 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY95F128NBPMC-GSE2 | Infineon Technologies |
Description: IC MCU 8BIT 60KB FLASH 100LQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 60KB (60K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 105°C Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-8FX Data Converters: A/D 12x8/10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V Connectivity: I2C, LINbus, SIO, UART/USART Peripherals: LCD, LVD, POR, PWM, WDT Supplier Device Package: 100-LQFP (14x14) Number of I/O: 87 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| CYW55901IUBGTXTMA1 | Infineon Technologies |
Description: WI-FI COMBO IOT Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||
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SPD03N60C3BTMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 3.2A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 135µA Supplier Device Package: PG-TO252-3-11 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V |
на замовлення 289 шт: термін постачання 21-31 дні (днів) |
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| IQFH68N06NM5ATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 460A (Tc)
Rds On (Max) @ Id, Vgs: 0.68mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 273W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 217µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 30 V
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 460A (Tc)
Rds On (Max) @ Id, Vgs: 0.68mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 273W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 217µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
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| IQFH68N06NM5ATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 460A (Tc)
Rds On (Max) @ Id, Vgs: 0.68mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 273W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 217µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 30 V
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 460A (Tc)
Rds On (Max) @ Id, Vgs: 0.68mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 273W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 217µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 30 V
на замовлення 209 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 483.84 грн |
| 10+ | 313.66 грн |
| 100+ | 227.43 грн |
| IRF60DM206 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 130A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric ME
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: DirectFET™ Isometric ME
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6530 pF @ 25 V
Description: MOSFET N-CH 60V 130A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric ME
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: DirectFET™ Isometric ME
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6530 pF @ 25 V
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Мінімальне замовлення: 4800 шт
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| IRF60DM206 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 130A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric ME
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: DirectFET™ Isometric ME
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6530 pF @ 25 V
Description: MOSFET N-CH 60V 130A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric ME
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: DirectFET™ Isometric ME
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6530 pF @ 25 V
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| SLB9673XU20FW2624XTMA1 |
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Виробник: Infineon Technologies
Description: SLB9673XU20FW2624XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
Description: SLB9673XU20FW2624XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
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Мінімальне замовлення: 5000 шт
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| SLB9673XU20FW2624XTMA1 |
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Виробник: Infineon Technologies
Description: SLB9673XU20FW2624XTMA1
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
Description: SLB9673XU20FW2624XTMA1
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
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| SLB9673AU20FW2624XTMA1 |
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Виробник: Infineon Technologies
Description: SLB9673AU20FW2624XTMA1
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
Description: SLB9673AU20FW2624XTMA1
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
на замовлення 1326 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 416.28 грн |
| 10+ | 305.80 грн |
| 25+ | 282.07 грн |
| 100+ | 240.20 грн |
| 250+ | 228.52 грн |
| 500+ | 221.48 грн |
| 1000+ | 212.15 грн |
| CYT4DNJBHCQ1BZSGS |
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Виробник: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 640K x 8
Program Memory Size: 6.19MB (6.19M x 8)
Speed: 100MHz, 320MHz
Mounting Type: Surface Mount
Package / Case: 327-LFBGA
Packaging: Tray
Number of I/O: 168
Supplier Device Package: 327-FBGA (17x17)
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR
Description: TRAVEO-2 CLUST.2.5DGRAPH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 640K x 8
Program Memory Size: 6.19MB (6.19M x 8)
Speed: 100MHz, 320MHz
Mounting Type: Surface Mount
Package / Case: 327-LFBGA
Packaging: Tray
Number of I/O: 168
Supplier Device Package: 327-FBGA (17x17)
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR
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Мінімальне замовлення: 900 шт
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| CYT4DNJBLCQ1BZSGS |
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Виробник: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Mounting Type: Surface Mount
Package / Case: 327-LFBGA
Packaging: Tray
Number of I/O: 168
Supplier Device Package: 327-FBGA (17x17)
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 640K x 8
Program Memory Size: 6.19MB (6.19M x 8)
Speed: 100MHz, 320MHz
Description: TRAVEO-2 CLUST.2.5DGRAPH
Mounting Type: Surface Mount
Package / Case: 327-LFBGA
Packaging: Tray
Number of I/O: 168
Supplier Device Package: 327-FBGA (17x17)
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 640K x 8
Program Memory Size: 6.19MB (6.19M x 8)
Speed: 100MHz, 320MHz
товару немає в наявності
Мінімальне замовлення: 900 шт
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| IMT65R020M2HXUMA1 |
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Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 489.60 грн |
| IMT65R020M2HXUMA1 |
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Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
на замовлення 2577 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1025.93 грн |
| 10+ | 692.98 грн |
| 100+ | 577.08 грн |
| F410MR20W3M1HB11BPSA1 |
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Виробник: Infineon Technologies
Description: EASY STANDARD PLUS
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 95A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 1200V
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 120A, 18V
Gate Charge (Qg) (Max) @ Vgs: 470nC @ 3V
Vgs(th) (Max) @ Id: 5.15V @ 68mA
Description: EASY STANDARD PLUS
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 95A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 1200V
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 120A, 18V
Gate Charge (Qg) (Max) @ Vgs: 470nC @ 3V
Vgs(th) (Max) @ Id: 5.15V @ 68mA
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 20941.92 грн |
| 16+ | 18761.28 грн |
| CHL8214-01CRT |
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Виробник: Infineon Technologies
Description: IC REG BUCK 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: 0°C ~ 85°C
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-40-903
Synchronous Rectifier: No
Control Features: Enable
Serial Interfaces: I2C
Output Phases: 4
Clock Sync: No
Number of Outputs: 5
Description: IC REG BUCK 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: 0°C ~ 85°C
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-40-903
Synchronous Rectifier: No
Control Features: Enable
Serial Interfaces: I2C
Output Phases: 4
Clock Sync: No
Number of Outputs: 5
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| CY7C1061GE-10BVXI |
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Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 960 шт
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| T501N65TOHXPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 7KV 1000A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 890 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 1000 A
Voltage - Off State: 7 kV
Description: SCR MODULE 7KV 1000A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 890 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 1000 A
Voltage - Off State: 7 kV
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| IGLR65R140D2XUMA1 |
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Виробник: Infineon Technologies
Description: GANFET N-CH 650V 13A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 3.1A
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 400 V
Description: GANFET N-CH 650V 13A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 3.1A
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 400 V
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Мінімальне замовлення: 5000 шт
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| IGLR65R140D2XUMA1 |
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Виробник: Infineon Technologies
Description: GANFET N-CH 650V 13A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 3.1A
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 400 V
Description: GANFET N-CH 650V 13A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 3.1A
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 400 V
на замовлення 3975 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 265.61 грн |
| 10+ | 167.22 грн |
| 100+ | 116.91 грн |
| 500+ | 89.94 грн |
| IGT65R140D2ATMA1 |
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Виробник: Infineon Technologies
Description: GANFET N-CH 650V 13A 8PSFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-HSOF-8-3
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 400 V
Description: GANFET N-CH 650V 13A 8PSFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-HSOF-8-3
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 400 V
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Мінімальне замовлення: 2000 шт
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| IGT65R140D2ATMA1 |
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Виробник: Infineon Technologies
Description: GANFET N-CH 650V 13A 8PSFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-HSOF-8-3
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 400 V
Description: GANFET N-CH 650V 13A 8PSFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-HSOF-8-3
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 400 V
на замовлення 1641 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 274.93 грн |
| 10+ | 173.58 грн |
| 100+ | 121.60 грн |
| 500+ | 94.44 грн |
| CY14ME064J2-SXQ |
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Виробник: Infineon Technologies
Description: IC NVSRAM 64KBIT I2C 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: I2C
Supplier Device Package: 8-SOIC
Memory Format: NVSRAM
Clock Frequency: 3.4 MHz
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Description: IC NVSRAM 64KBIT I2C 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: I2C
Supplier Device Package: 8-SOIC
Memory Format: NVSRAM
Clock Frequency: 3.4 MHz
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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Мінімальне замовлення: 970 шт
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| FF600R17ME4PBOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 600A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 48 nF @ 25 V
Description: IGBT MODULE 1700V 600A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 48 nF @ 25 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 15860.41 грн |
| ETT630N18P60XPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 700A MODULE
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 628 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 20000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 135°C (TC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: SCR MODULE 1.8KV 700A MODULE
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 628 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 20000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 135°C (TC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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Мінімальне замовлення: 2 шт
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| CY95F633HPMC-G-UNE2 |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 12KB 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 28
Description: IC MCU 8BIT 12KB 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 28
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Мінімальне замовлення: 2500 шт
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| CY95F633HPMC-G-UNERE2 |
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Виробник: Infineon Technologies
Description: IC MM MCU 32LQFP
Packaging: Tape & Reel (TR)
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: IC MM MCU 32LQFP
Packaging: Tape & Reel (TR)
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 28
DigiKey Programmable: Not Verified
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| CY95F633HPMC-G-UNERE2 |
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Виробник: Infineon Technologies
Description: IC MM MCU 32LQFP
Packaging: Cut Tape (CT)
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: IC MM MCU 32LQFP
Packaging: Cut Tape (CT)
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 28
DigiKey Programmable: Not Verified
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| S25FL256LAGMFB001 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Memory Interface: SPI - Quad I/O, QPI
Grade: Automotive
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 133 MHz
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Memory Interface: SPI - Quad I/O, QPI
Grade: Automotive
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 133 MHz
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Мінімальне замовлення: 705 шт
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| S25FL256LAGMFB000 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tray
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Memory Interface: SPI - Quad I/O, QPI
Grade: Automotive
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tray
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Memory Interface: SPI - Quad I/O, QPI
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 240 шт
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| CY91F526DWEPMC-GSE2 |
Виробник: Infineon Technologies
Description: IC MCU 32BT 1.0625MB FLSH 80LQFP
DigiKey Programmable: Not Verified
Number of I/O: 56
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 32x12b SAR; D/A 1x8b
Core Processor: FR81S
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 136K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
Description: IC MCU 32BT 1.0625MB FLSH 80LQFP
DigiKey Programmable: Not Verified
Number of I/O: 56
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 32x12b SAR; D/A 1x8b
Core Processor: FR81S
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 136K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 1190 шт
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| CY91F526FSCPMC-GSE1 |
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Виробник: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 76
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 37x12b; D/A 2x8b
Core Processor: FR81S
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 136K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Description: IC MCU 32B 1.0625MB FLSH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 76
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 37x12b; D/A 2x8b
Core Processor: FR81S
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 136K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 900 шт
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| CY91F526FSCPMC-GSE2 |
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Виробник: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 76
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 37x12b; D/A 2x8b
Core Processor: FR81S
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 136K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Description: IC MCU 32B 1.0625MB FLSH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 76
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 37x12b; D/A 2x8b
Core Processor: FR81S
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 136K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 900 шт
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| CYPD7291-68LDXST |
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Виробник: Infineon Technologies
Description: CCG7D
Packaging: Cut Tape (CT)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4V ~ 24V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB), ROM (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 68-QFN (10x10)
Grade: Automotive
Number of I/O: 19
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: CCG7D
Packaging: Cut Tape (CT)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4V ~ 24V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB), ROM (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 68-QFN (10x10)
Grade: Automotive
Number of I/O: 19
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 540.54 грн |
| 10+ | 403.03 грн |
| 25+ | 373.76 грн |
| 100+ | 320.60 грн |
| 250+ | 306.23 грн |
| 500+ | 297.56 грн |
| 1000+ | 285.68 грн |
| IPP089N15NM6AKSA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 32A, 15V
Power Dissipation (Max): 3.8W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 73µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 75 V
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 32A, 15V
Power Dissipation (Max): 3.8W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 73µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 75 V
на замовлення 748 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 217.46 грн |
| 50+ | 103.80 грн |
| 100+ | 93.59 грн |
| 500+ | 71.02 грн |
| TLE9869QXA20XUMA1 |
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Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 10
Grade: Automotive
Supplier Device Package: PG-VQFN-48-29
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (128kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 150°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Description: IC MOTOR DRIVER 48VQFN
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 10
Grade: Automotive
Supplier Device Package: PG-VQFN-48-29
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (128kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 150°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| TLE9835QXXUMA1 |
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Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
DigiKey Programmable: Not Verified
Number of I/O: 11
Grade: Automotive
Supplier Device Package: PG-VQFN-48-29
Core Processor: XC800
Program Memory Type: FLASH (64kB)
Voltage - Supply: 3V ~ 27V
Operating Temperature: -40°C ~ 150°C (TJ)
RAM Size: 3.25K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC MOTOR DRIVER 48VQFN
DigiKey Programmable: Not Verified
Number of I/O: 11
Grade: Automotive
Supplier Device Package: PG-VQFN-48-29
Core Processor: XC800
Program Memory Type: FLASH (64kB)
Voltage - Supply: 3V ~ 27V
Operating Temperature: -40°C ~ 150°C (TJ)
RAM Size: 3.25K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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| TLE9845QXXUMA1 |
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Виробник: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (48kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: EMBEDDED POWER
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (48kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 87049 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 78+ | 258.92 грн |
| TLE9842QXXUMA2 |
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Виробник: Infineon Technologies
Description: EMBEDDED_POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SPI, SSC, UART
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Controller Series: TLE984x
Program Memory Type: FLASH (36kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Number of I/O: 10
Qualification: AEC-Q100
Description: EMBEDDED_POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SPI, SSC, UART
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Controller Series: TLE984x
Program Memory Type: FLASH (36kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Number of I/O: 10
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| TLE98422QXXUMA2 |
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Виробник: Infineon Technologies
Description: EMBEDDED_POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Controller Series: TLE984x
Program Memory Type: FLASH (40kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Number of I/O: 10
Qualification: AEC-Q100
Description: EMBEDDED_POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Controller Series: TLE984x
Program Memory Type: FLASH (40kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Number of I/O: 10
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| TLE9843QXXUMA2 |
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Виробник: Infineon Technologies
Description: EMBEDDED_POWER
Operating Temperature: -40°C ~ 150°C (TJ)
RAM Size: 4K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Number of I/O: 10
Grade: Automotive
Supplier Device Package: PG-VQFN-48-79
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH (48kB)
Controller Series: TLE984x
Voltage - Supply: 3V ~ 28V
Description: EMBEDDED_POWER
Operating Temperature: -40°C ~ 150°C (TJ)
RAM Size: 4K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Number of I/O: 10
Grade: Automotive
Supplier Device Package: PG-VQFN-48-79
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH (48kB)
Controller Series: TLE984x
Voltage - Supply: 3V ~ 28V
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| AUIRFR8403 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 100A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 100A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2656 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 238+ | 84.52 грн |
| XMC1302Q024F0032ABXTMA1 |
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Виробник: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-24-19
Number of I/O: 22
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-24-19
Number of I/O: 22
товару немає в наявності
Мінімальне замовлення: 6000 шт
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| TD430N22KOFXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 2.2KV 800A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 430 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 2.2 kV
Description: SCR MODULE 2.2KV 800A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 430 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 2.2 kV
товару немає в наявності
Мінімальне замовлення: 2 шт
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| TD430N22KOFTIMHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 2.2KV 800A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 430 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 2.2 kV
Description: SCR MODULE 2.2KV 800A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 430 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 2.2 kV
товару немає в наявності
Мінімальне замовлення: 2 шт
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| TT430N22KOFXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 2.2KV 800A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 430 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 2.2 kV
Description: SCR MODULE 2.2KV 800A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 430 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 2.2 kV
товару немає в наявності
Мінімальне замовлення: 2 шт
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| XDPE192C3B0000XUMA1 |
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Виробник: Infineon Technologies
Description: IFX PRIMARION CNTRLLER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 2.8V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 12V
Applications: Controller, AMD
Supplier Device Package: PG-VQFN-48-63
Description: IFX PRIMARION CNTRLLER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 2.8V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 12V
Applications: Controller, AMD
Supplier Device Package: PG-VQFN-48-63
товару немає в наявності
Мінімальне замовлення: 4000 шт
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| XDPE192C3B0000XUMA1 |
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Виробник: Infineon Technologies
Description: IFX PRIMARION CNTRLLER
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 2.8V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 12V
Applications: Controller, AMD
Supplier Device Package: PG-VQFN-48-63
Description: IFX PRIMARION CNTRLLER
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 2.8V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 12V
Applications: Controller, AMD
Supplier Device Package: PG-VQFN-48-63
на замовлення 289 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 429.48 грн |
| 10+ | 318.07 грн |
| 25+ | 294.21 грн |
| 100+ | 251.46 грн |
| 250+ | 239.71 грн |
| XDPE1A2G5B0000XUMA1 |
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Виробник: Infineon Technologies
Description: IFX PRIMARION CNTRLLER
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Voltage - Output: 0.05V ~ 3.1V
Mounting Type: Surface Mount
Number of Outputs: 2
Applications: Controller, High Performance Processor
Supplier Device Package: PG-VQFN-56
Description: IFX PRIMARION CNTRLLER
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Voltage - Output: 0.05V ~ 3.1V
Mounting Type: Surface Mount
Number of Outputs: 2
Applications: Controller, High Performance Processor
Supplier Device Package: PG-VQFN-56
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| XDPE1A2G5B0000XUMA1 |
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Виробник: Infineon Technologies
Description: IFX PRIMARION CNTRLLER
Packaging: Cut Tape (CT)
Package / Case: 56-VFQFN Exposed Pad
Voltage - Output: 0.05V ~ 3.1V
Mounting Type: Surface Mount
Number of Outputs: 2
Applications: Controller, High Performance Processor
Supplier Device Package: PG-VQFN-56
Description: IFX PRIMARION CNTRLLER
Packaging: Cut Tape (CT)
Package / Case: 56-VFQFN Exposed Pad
Voltage - Output: 0.05V ~ 3.1V
Mounting Type: Surface Mount
Number of Outputs: 2
Applications: Controller, High Performance Processor
Supplier Device Package: PG-VQFN-56
на замовлення 1742 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 576.26 грн |
| 10+ | 429.88 грн |
| 25+ | 398.67 грн |
| 100+ | 341.97 грн |
| 250+ | 334.13 грн |
| IPD047N03LF2SATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 71A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 40A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Description: MOSFET N-CH 30V 71A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 40A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
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Мінімальне замовлення: 2000 шт
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| IPD047N03LF2SATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 71A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 40A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Description: MOSFET N-CH 30V 71A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 40A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
на замовлення 1564 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.99 грн |
| 10+ | 48.31 грн |
| 100+ | 31.79 грн |
| 500+ | 23.17 грн |
| 1000+ | 21.02 грн |
| BTM9011EPXUMA1 |
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Виробник: Infineon Technologies
Description: BTM9011EPXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 9.2A
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 40V
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 40V
Supplier Device Package: PG-TSDSO-14
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
Description: BTM9011EPXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 9.2A
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 40V
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 40V
Supplier Device Package: PG-TSDSO-14
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 62.12 грн |
| BTM9011EPXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: BTM9011EPXUMA1
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 9.2A
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 40V
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 40V
Supplier Device Package: PG-TSDSO-14
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
Description: BTM9011EPXUMA1
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 9.2A
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 40V
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 40V
Supplier Device Package: PG-TSDSO-14
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3103 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 123.48 грн |
| 10+ | 87.43 грн |
| 25+ | 79.60 грн |
| 100+ | 66.61 грн |
| 250+ | 62.75 грн |
| 500+ | 60.42 грн |
| 1000+ | 57.54 грн |
| BSC085N025S G |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 14A/35A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 35A, 10V
Power Dissipation (Max): 2.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
Description: MOSFET N-CH 25V 14A/35A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 35A, 10V
Power Dissipation (Max): 2.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
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Мінімальне замовлення: 5000 шт
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| PTF141501E V1 |
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Виробник: Infineon Technologies
Description: RF MOSFET LDMOS 28V H-30260-2
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 1.5GHz
Power - Output: 150W
Gain: 16.5dB
Technology: LDMOS
Supplier Device Package: H-30260-2
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 1.5 A
Description: RF MOSFET LDMOS 28V H-30260-2
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 1.5GHz
Power - Output: 150W
Gain: 16.5dB
Technology: LDMOS
Supplier Device Package: H-30260-2
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 1.5 A
товару немає в наявності
Мінімальне замовлення: 35 шт
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| CY95F128DPMC-GE1 |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 60KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.3V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 87
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 60KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.3V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 87
DigiKey Programmable: Not Verified
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| CY95F633KPMC-G-SNE2 |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 12KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 29
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 12KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 29
DigiKey Programmable: Not Verified
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| CY95F633KNPMC-G-UNE2 |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 12KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 29
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 12KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 29
DigiKey Programmable: Not Verified
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| MB95F128JBPMC-G-JNE1 |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 60KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 87
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 60KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 87
DigiKey Programmable: Not Verified
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| CY95F128NBPMC-GSE2 |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 60KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 87
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 60KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 87
DigiKey Programmable: Not Verified
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| CYW55901IUBGTXTMA1 |
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| SPD03N60C3BTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 3.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Description: MOSFET N-CH 650V 3.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
на замовлення 289 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 140.57 грн |
| 10+ | 86.45 грн |
| 100+ | 58.30 грн |

































