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CY62167G30-45ZXIT CY62167G30-45ZXIT Infineon Technologies Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral& Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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CY62167G30-45ZXIT CY62167G30-45ZXIT Infineon Technologies Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral& Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
на замовлення 740 шт:
термін постачання 21-31 дні (днів)
1+1101.22 грн
10+983.96 грн
25+953.43 грн
50+873.17 грн
100+851.73 грн
250+823.74 грн
500+789.77 грн
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AUIRFS4115-7P Infineon Technologies INFN-S-A0002296895-1.pdf?t.download=true&u=5oefqw Description: AUIRFS4115 - 120V-300V N-CHANNEL
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 63A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 50 V
Qualification: AEC-Q101
на замовлення 35170 шт:
термін постачання 21-31 дні (днів)
101+218.88 грн
Мінімальне замовлення: 101
В кошику  од. на суму  грн.
AUIRFS4115-7P AUIRFS4115-7P Infineon Technologies auirfs4115-7p.pdf?fileId=5546d462533600a4015355b6c64614cb Description: MOSFET N-CH 150V 105A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 63A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 50 V
Qualification: AEC-Q101
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AUIRFS4115-7TRL AUIRFS4115-7TRL Infineon Technologies auirfs4115-7p.pdf?fileId=5546d462533600a4015355b6c64614cb Description: MOSFET N-CH 150V 105A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 63A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 50 V
Qualification: AEC-Q101
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2EDL8034F5BXUMA1 2EDL8034F5BXUMA1 Infineon Technologies 448_2EDL803_Datasheet.pdf Description: 2EDL8034F5BXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-DSO-8-92
Rise / Fall Time (Typ): 4.4ns, 3.3ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2.1V, 1.9V
Current - Peak Output (Source, Sink): 4A, 4A
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2EDL8034F5BXUMA1 2EDL8034F5BXUMA1 Infineon Technologies 448_2EDL803_Datasheet.pdf Description: 2EDL8034F5BXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-DSO-8-92
Rise / Fall Time (Typ): 4.4ns, 3.3ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2.1V, 1.9V
Current - Peak Output (Source, Sink): 4A, 4A
на замовлення 1691 шт:
термін постачання 21-31 дні (днів)
4+103.78 грн
10+72.51 грн
25+65.77 грн
100+54.73 грн
250+51.39 грн
500+49.38 грн
1000+46.94 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CY7C1370KV33-167AXIT CY7C1370KV33-167AXIT Infineon Technologies Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_ Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1370KV33-167AXIT CY7C1370KV33-167AXIT Infineon Technologies Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_ Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 580 шт:
термін постачання 21-31 дні (днів)
1+2364.53 грн
10+2106.17 грн
25+2038.64 грн
50+1865.72 грн
100+1856.41 грн
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CYUSB3314-88LTXIT CYUSB3314-88LTXIT Infineon Technologies Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC USB 3.0 HUB 4-PORT 88QFN
Packaging: Tape & Reel (TR)
Package / Case: 88-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 3.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 88-QFN (10x10)
Number of I/O: 10
DigiKey Programmable: Not Verified
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CYUSB3314-88LTXIT CYUSB3314-88LTXIT Infineon Technologies Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC USB 3.0 HUB 4-PORT 88QFN
Packaging: Cut Tape (CT)
Package / Case: 88-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 3.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 88-QFN (10x10)
Number of I/O: 10
DigiKey Programmable: Not Verified
на замовлення 1650 шт:
термін постачання 21-31 дні (днів)
1+524.02 грн
10+389.24 грн
25+360.38 грн
100+308.38 грн
250+294.18 грн
500+285.62 грн
1000+274.00 грн
В кошику  од. на суму  грн.
F411MR12W3M1HB11BPSA1 Infineon Technologies Infineon-F4-11MR12W3M1H_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c95d1335f0195f5dfc49e2203 Description: F411MR12W3M1HB11BPSA1
Packaging: Tray
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+10467.58 грн
В кошику  од. на суму  грн.
BF776H6327XTSA1 BF776H6327XTSA1 Infineon Technologies BF776.pdf Description: RF TRANS NPN 4.7V 46GHZ SOT-343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 24dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 30mA, 3V
Frequency - Transition: 46GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-3D
на замовлення 32680 шт:
термін постачання 21-31 дні (днів)
1229+17.78 грн
Мінімальне замовлення: 1229
В кошику  од. на суму  грн.
IPA50R250CPXKSA1 IPA50R250CPXKSA1 Infineon Technologies IPA50R250CP_rev2.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42cd97047bc Description: MOSFET N-CH 500V 13A TO220-FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
на замовлення 2539 шт:
термін постачання 21-31 дні (днів)
170+130.37 грн
Мінімальне замовлення: 170
В кошику  од. на суму  грн.
ND89N12KHPSA1 ND89N12KHPSA1 Infineon Technologies INFNS29284-1.pdf?t.download=true&u=5oefqw Description: DIODE STANDARD 1200V 89A BGPB201
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 89A
Supplier Device Package: BG-PB20-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
1+7808.88 грн
15+6302.97 грн
В кошику  од. на суму  грн.
2EDL8033F5BXUMA1 2EDL8033F5BXUMA1 Infineon Technologies 448_2EDL803_Datasheet.pdf Description: 2EDL8033F5BXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-DSO-8-92
Rise / Fall Time (Typ): 4.6ns, 3.3ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2.1V, 1.9V
Current - Peak Output (Source, Sink): 3A, 6A
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2EDL8033F5BXUMA1 2EDL8033F5BXUMA1 Infineon Technologies 448_2EDL803_Datasheet.pdf Description: 2EDL8033F5BXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-DSO-8-92
Rise / Fall Time (Typ): 4.6ns, 3.3ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2.1V, 1.9V
Current - Peak Output (Source, Sink): 3A, 6A
на замовлення 2455 шт:
термін постачання 21-31 дні (днів)
4+89.20 грн
10+62.52 грн
25+56.66 грн
100+47.01 грн
250+44.09 грн
500+42.33 грн
1000+40.21 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IAUTN06S5N008TATMA1 IAUTN06S5N008TATMA1 Infineon Technologies Infineon-IAUTN06S5N008T-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb347018631414d0a0df7 Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Ta), 350A (Tj)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 100A, 10V
Power Dissipation (Max): 358W (Tc)
Vgs(th) (Max) @ Id: 3V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20280 pF @ 30 V
Qualification: AEC-Q101
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1800+221.53 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
IAUTN06S5N008TATMA1 IAUTN06S5N008TATMA1 Infineon Technologies Infineon-IAUTN06S5N008T-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb347018631414d0a0df7 Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Ta), 350A (Tj)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 100A, 10V
Power Dissipation (Max): 358W (Tc)
Vgs(th) (Max) @ Id: 3V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20280 pF @ 30 V
Qualification: AEC-Q101
на замовлення 2780 шт:
термін постачання 21-31 дні (днів)
1+532.60 грн
10+346.87 грн
100+261.10 грн
В кошику  од. на суму  грн.
BGA5H1BN6E6328XTSA1 BGA5H1BN6E6328XTSA1 Infineon Technologies Description: RF MMIC SUB 3 GHZ
Packaging: Tray
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.69GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.6V
Gain: 20dB
Current - Supply: 9.8mA
Noise Figure: 0.7dB
P1dB: -16dBm
Test Frequency: 2.5GHz
Supplier Device Package: PG-TSNP-6-10
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ISA150233C03LMDSXTMA ISA150233C03LMDSXTMA Infineon Technologies Infineon-ISA150233C03LMDS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2ed4aca62c5 Description: ISA150233C03LMDSXTMA
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 10.2A (Tc), 6.6A (Ta), 8.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 2300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V, 23.3mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 32nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
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ISA150233C03LMDSXTMA ISA150233C03LMDSXTMA Infineon Technologies Infineon-ISA150233C03LMDS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2ed4aca62c5 Description: ISA150233C03LMDSXTMA
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 10.2A (Tc), 6.6A (Ta), 8.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 2300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V, 23.3mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 32nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
на замовлення 479 шт:
термін постачання 21-31 дні (днів)
3+132.94 грн
10+81.68 грн
100+54.85 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ISA150233C03LMDSXTMA1 Infineon Technologies Infineon-ISA150233C03LMDS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2ed4aca62c5 Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 10.2A (Tc), 6.6A (Ta), 8.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 2300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V, 23.3mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 32nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
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AUIRF1324STRL AUIRF1324STRL Infineon Technologies INFN-S-A0002297093-1.pdf?t.download=true&u=5oefqw Description: AUIRF1324 - 20V-40V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 195A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
Qualification: AEC-Q101
на замовлення 316 шт:
термін постачання 21-31 дні (днів)
97+227.93 грн
Мінімальне замовлення: 97
В кошику  од. на суму  грн.
TC387TP128F300SAEKXUMA2 TC387TP128F300SAEKXUMA2 Infineon Technologies Infineon-TC38x-DataSheet-v01_02-EN.pdf?fileId=5546d4626f229553016fb316e6cf748b Description: IC MCU
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 1.25M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512K x 8
Core Processor: TriCore™
Data Converters: A/D 110 SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core, Dual-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+2493.53 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
TC387TP128F300SAEKXUMA2 TC387TP128F300SAEKXUMA2 Infineon Technologies Infineon-TC38x-DataSheet-v01_02-EN.pdf?fileId=5546d4626f229553016fb316e6cf748b Description: IC MCU
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 1.25M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512K x 8
Core Processor: TriCore™
Data Converters: A/D 110 SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core, Dual-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1+3677.59 грн
10+2907.68 грн
25+2749.26 грн
100+2416.77 грн
250+2338.93 грн
В кошику  од. на суму  грн.
TC399XX256F300SBDLXUMA1 TC399XX256F300SBDLXUMA1 Infineon Technologies Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 100 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-516-10
DigiKey Programmable: Not Verified
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TC399XP256F300SBDLXUMA1 TC399XP256F300SBDLXUMA1 Infineon Technologies Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.75M x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 100 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-516-10
DigiKey Programmable: Not Verified
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TC397XP256F300SBDKXUMA1 TC397XP256F300SBDKXUMA1 Infineon Technologies Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 76 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
DigiKey Programmable: Not Verified
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TC397XX256F300SBDKXUMA1 TC397XX256F300SBDKXUMA1 Infineon Technologies Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 76 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
DigiKey Programmable: Not Verified
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BCM88359CUBGT Infineon Technologies Description: 802.11AC HT80 RSDB + BT4.1 INDUS
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
товару немає в наявності
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IRF60B217 IRF60B217 Infineon Technologies irf60b217 Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 36A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V
на замовлення 645 шт:
термін постачання 21-31 дні (днів)
324+67.50 грн
Мінімальне замовлення: 324
В кошику  од. на суму  грн.
IRF60B217 IRF60B217 Infineon Technologies irf60b217 Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 36A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V
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BSS131IXUSA1 BSS131IXUSA1 Infineon Technologies 448_BSS131I.pdf Description: BSS131IXUSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 109mA (Ta), 121mA (Tc)
Rds On (Max) @ Id, Vgs: 14Ohm @ 120mA, 10V
Power Dissipation (Max): 400mW (Ta), 440mW (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 56µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 120 V
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BSS131IXUSA1 BSS131IXUSA1 Infineon Technologies 448_BSS131I.pdf Description: BSS131IXUSA1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 109mA (Ta), 121mA (Tc)
Rds On (Max) @ Id, Vgs: 14Ohm @ 120mA, 10V
Power Dissipation (Max): 400mW (Ta), 440mW (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 56µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 120 V
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
15+24.01 грн
24+14.29 грн
100+8.95 грн
500+6.22 грн
1000+5.51 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
BSS83IXUSA1 BSS83IXUSA1 Infineon Technologies 448_BSS83I.pdf Description: BSS83IXUSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta), 550mA (Tc)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 300mA, 10V
Power Dissipation (Max): 400mW (Ta), 1.04W (Tc)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.09 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 30 V
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BSS83IXUSA1 BSS83IXUSA1 Infineon Technologies 448_BSS83I.pdf Description: BSS83IXUSA1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta), 550mA (Tc)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 300mA, 10V
Power Dissipation (Max): 400mW (Ta), 1.04W (Tc)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.09 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 30 V
на замовлення 2964 шт:
термін постачання 21-31 дні (днів)
15+23.16 грн
25+13.38 грн
100+8.37 грн
500+5.80 грн
1000+5.13 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
XE164F96F80LACFXQMA1 XE164F96F80LACFXQMA1 Infineon Technologies XE164_V2.1_Aug2008.pdf Description: IC MCU 16BIT 768KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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AIGW40N65H5XKSA1 AIGW40N65H5XKSA1 Infineon Technologies Infineon-AIGW40N65H5-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015d0809d9967f2c Description: IGBT TRENCH 650V 74A TO247-3-41
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/165ns
Switching Energy: 350µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Grade: Automotive
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Qualification: AEC-Q101
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
30+740.75 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
F3L420R12W3H7H21BPSA1 F3L420R12W3H7H21BPSA1 Infineon Technologies Infineon-F3L420R12W3H7_H21-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196fd8fb54733d7 Description: F3L420R12W3H7H21BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 240A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 26 µA
Input Capacitance (Cies) @ Vce: 330 pF @ 25 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
1+6127.03 грн
В кошику  од. на суму  грн.
F3L420R12W4H7H11BPSA1 F3L420R12W4H7H11BPSA1 Infineon Technologies Infineon-F3L420R12W4H7_H11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196e91ba5d1228b Description: F3L420R12W4H7H11BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.76V @ 15V, 250A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 26 µA
Input Capacitance (Cies) @ Vce: 47700 pF @ 25 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
1+12945.32 грн
6+11563.18 грн
12+11264.35 грн
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IRFP2907PBFXKMA1 IRFP2907PBFXKMA1 Infineon Technologies Infineon-IRFP2907-DataSheet-v01_00-EN.pdf Description: PLANAR 40<-<100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 125A, 10V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO247-3-901
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 620 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
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ISCH54N04NM7VATMA1 ISCH54N04NM7VATMA1 Infineon Technologies 448_ISCH54N04NM7V.pdf Description: ISCH54N04NM7VATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 458A (Tc)
Rds On (Max) @ Id, Vgs: 0.5mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 113µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
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ISCH54N04NM7VATMA1 ISCH54N04NM7VATMA1 Infineon Technologies 448_ISCH54N04NM7V.pdf Description: ISCH54N04NM7VATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 458A (Tc)
Rds On (Max) @ Id, Vgs: 0.5mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 113µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
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CYT2BL4CXAQ0AZEGSTHUYA1 Infineon Technologies infineon-cyt2bl-traveo-tm-t2g-32-bit-automotive-mcu-based-on-arm-r-cortex-r--m4f-single-datasheet-en.pdf Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tape & Reel (TR)
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CYT2BL4CXAQ0AZEGSHQLA1 Infineon Technologies infineon-cyt2bl-traveo-tm-t2g-32-bit-automotive-mcu-based-on-arm-r-cortex-r--m4f-single-datasheet-en.pdf Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tray
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TLE5046MTICAKLRHALA1 TLE5046MTICAKLRHALA1 Infineon Technologies Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
на замовлення 1976 шт:
термін постачання 21-31 дні (днів)
3+142.37 грн
5+121.07 грн
10+115.38 грн
25+101.90 грн
50+97.53 грн
100+93.55 грн
500+84.13 грн
1000+81.19 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE5046MTICAKLRHALA1 TLE5046MTICAKLRHALA1 Infineon Technologies Description: SPEED & CURRENT SENSORS
Packaging: Tape & Box (TB)
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
TLE5046MTICPW2100HALA1 TLE5046MTICPW2100HALA1 Infineon Technologies Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
на замовлення 1976 шт:
термін постачання 21-31 дні (днів)
3+142.37 грн
5+121.07 грн
10+115.38 грн
25+101.90 грн
50+97.53 грн
100+93.55 грн
500+84.13 грн
1000+81.19 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF8304MTRPBF IRF8304MTRPBF Infineon Technologies irf8304mpbf.pdf?fileId=5546d462533600a40153560d20db1d5d Description: MOSFET N-CH 30V 28A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V
Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DirectFET™ Isometric MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
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IRF8308MTRPBF IRF8308MTRPBF Infineon Technologies irf8308mpbf.pdf?fileId=5546d462533600a40153560d319d1d61 Description: MOSFET N-CH 30V 27A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4404 pF @ 15 V
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IRF830PBF IRF830PBF Infineon Technologies irl620.pdf Description: MOSFET N-CH 500V 4.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
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FF600R12KE4PBOSA1 FF600R12KE4PBOSA1 Infineon Technologies Infineon-FF600R12KE4P-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601701f0f154740cf Description: IGBT MOD 1200V 600A AG-62MM-1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: AG-62MM-1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 38 nF @ 25 V
на замовлення 128 шт:
термін постачання 21-31 дні (днів)
2+13380.58 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPI320N20N3GAKSA1 IPI320N20N3GAKSA1 Infineon Technologies IPP_B_I_320N20N3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f170124967064ba184a Description: MOSFET N-CH 200V 34A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
6+3629.13 грн
Мінімальне замовлення: 6
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IRG8P25N120KD-EPBF IRG8P25N120KD-EPBF Infineon Technologies IRG8P25N120KD%28-E%29PbF.pdf Description: IGBT 1200V 40A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/170ns
Switching Energy: 800µJ (on), 900µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 180 W
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BSS84IXUSA1 BSS84IXUSA1 Infineon Technologies 448_BSS84I.pdf Description: BSS84IXUSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta), 290mA (Tc)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 180mA, 10V
Power Dissipation (Max): 400mW (Ta), 960mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 780 pC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V
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BSS84IXUSA1 BSS84IXUSA1 Infineon Technologies 448_BSS84I.pdf Description: BSS84IXUSA1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta), 290mA (Tc)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 180mA, 10V
Power Dissipation (Max): 400mW (Ta), 960mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 780 pC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V
на замовлення 2389 шт:
термін постачання 21-31 дні (днів)
20+17.15 грн
33+10.08 грн
100+6.28 грн
500+4.31 грн
1000+3.80 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
TLE9166EQXUMA1 TLE9166EQXUMA1 Infineon Technologies Infineon-TLE9166_Product_Overview-ProductOverview-v01_02-EN.pdf?fileId=8ac78c8c90530b3a01914711af523f80 Description: DC_MOTOR_CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.1A, 3A, 5A, 7A, 8A
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6), High Side (5)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: PG-TSDSO-32-1
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
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TLE9166EQXUMA1 TLE9166EQXUMA1 Infineon Technologies Infineon-TLE9166_Product_Overview-ProductOverview-v01_02-EN.pdf?fileId=8ac78c8c90530b3a01914711af523f80 Description: DC_MOTOR_CONTROL
Packaging: Cut Tape (CT)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.1A, 3A, 5A, 7A, 8A
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6), High Side (5)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: PG-TSDSO-32-1
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
на замовлення 21 шт:
термін постачання 21-31 дні (днів)
2+244.43 грн
10+176.41 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IAUZN04S7L046ATMA1 IAUZN04S7L046ATMA1 Infineon Technologies Infineon-IAUZN04S7L046-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192a79ecf4a6acd Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tj)
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 10µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 20 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+19.93 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
CY62167G30-45ZXIT Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral&
CY62167G30-45ZXIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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CY62167G30-45ZXIT Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral&
CY62167G30-45ZXIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
на замовлення 740 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1101.22 грн
10+983.96 грн
25+953.43 грн
50+873.17 грн
100+851.73 грн
250+823.74 грн
500+789.77 грн
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AUIRFS4115-7P INFN-S-A0002296895-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: AUIRFS4115 - 120V-300V N-CHANNEL
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 63A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 50 V
Qualification: AEC-Q101
на замовлення 35170 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
101+218.88 грн
Мінімальне замовлення: 101
В кошику  од. на суму  грн.
AUIRFS4115-7P auirfs4115-7p.pdf?fileId=5546d462533600a4015355b6c64614cb
AUIRFS4115-7P
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 105A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 63A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 50 V
Qualification: AEC-Q101
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AUIRFS4115-7TRL auirfs4115-7p.pdf?fileId=5546d462533600a4015355b6c64614cb
AUIRFS4115-7TRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 105A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 63A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 50 V
Qualification: AEC-Q101
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2EDL8034F5BXUMA1 448_2EDL803_Datasheet.pdf
2EDL8034F5BXUMA1
Виробник: Infineon Technologies
Description: 2EDL8034F5BXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-DSO-8-92
Rise / Fall Time (Typ): 4.4ns, 3.3ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2.1V, 1.9V
Current - Peak Output (Source, Sink): 4A, 4A
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2EDL8034F5BXUMA1 448_2EDL803_Datasheet.pdf
2EDL8034F5BXUMA1
Виробник: Infineon Technologies
Description: 2EDL8034F5BXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-DSO-8-92
Rise / Fall Time (Typ): 4.4ns, 3.3ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2.1V, 1.9V
Current - Peak Output (Source, Sink): 4A, 4A
на замовлення 1691 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+103.78 грн
10+72.51 грн
25+65.77 грн
100+54.73 грн
250+51.39 грн
500+49.38 грн
1000+46.94 грн
Мінімальне замовлення: 4
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CY7C1370KV33-167AXIT Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_
CY7C1370KV33-167AXIT
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C1370KV33-167AXIT Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_
CY7C1370KV33-167AXIT
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 580 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2364.53 грн
10+2106.17 грн
25+2038.64 грн
50+1865.72 грн
100+1856.41 грн
В кошику  од. на суму  грн.
CYUSB3314-88LTXIT Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYUSB3314-88LTXIT
Виробник: Infineon Technologies
Description: IC USB 3.0 HUB 4-PORT 88QFN
Packaging: Tape & Reel (TR)
Package / Case: 88-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 3.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 88-QFN (10x10)
Number of I/O: 10
DigiKey Programmable: Not Verified
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CYUSB3314-88LTXIT Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYUSB3314-88LTXIT
Виробник: Infineon Technologies
Description: IC USB 3.0 HUB 4-PORT 88QFN
Packaging: Cut Tape (CT)
Package / Case: 88-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 3.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 88-QFN (10x10)
Number of I/O: 10
DigiKey Programmable: Not Verified
на замовлення 1650 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+524.02 грн
10+389.24 грн
25+360.38 грн
100+308.38 грн
250+294.18 грн
500+285.62 грн
1000+274.00 грн
В кошику  од. на суму  грн.
F411MR12W3M1HB11BPSA1 Infineon-F4-11MR12W3M1H_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c95d1335f0195f5dfc49e2203
Виробник: Infineon Technologies
Description: F411MR12W3M1HB11BPSA1
Packaging: Tray
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+10467.58 грн
В кошику  од. на суму  грн.
BF776H6327XTSA1 BF776.pdf
BF776H6327XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 4.7V 46GHZ SOT-343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 24dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 30mA, 3V
Frequency - Transition: 46GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-3D
на замовлення 32680 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1229+17.78 грн
Мінімальне замовлення: 1229
В кошику  од. на суму  грн.
IPA50R250CPXKSA1 IPA50R250CP_rev2.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42cd97047bc
IPA50R250CPXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 13A TO220-FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
на замовлення 2539 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
170+130.37 грн
Мінімальне замовлення: 170
В кошику  од. на суму  грн.
ND89N12KHPSA1 INFNS29284-1.pdf?t.download=true&u=5oefqw
ND89N12KHPSA1
Виробник: Infineon Technologies
Description: DIODE STANDARD 1200V 89A BGPB201
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 89A
Supplier Device Package: BG-PB20-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7808.88 грн
15+6302.97 грн
В кошику  од. на суму  грн.
2EDL8033F5BXUMA1 448_2EDL803_Datasheet.pdf
2EDL8033F5BXUMA1
Виробник: Infineon Technologies
Description: 2EDL8033F5BXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-DSO-8-92
Rise / Fall Time (Typ): 4.6ns, 3.3ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2.1V, 1.9V
Current - Peak Output (Source, Sink): 3A, 6A
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2EDL8033F5BXUMA1 448_2EDL803_Datasheet.pdf
2EDL8033F5BXUMA1
Виробник: Infineon Technologies
Description: 2EDL8033F5BXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-DSO-8-92
Rise / Fall Time (Typ): 4.6ns, 3.3ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2.1V, 1.9V
Current - Peak Output (Source, Sink): 3A, 6A
на замовлення 2455 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+89.20 грн
10+62.52 грн
25+56.66 грн
100+47.01 грн
250+44.09 грн
500+42.33 грн
1000+40.21 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IAUTN06S5N008TATMA1 Infineon-IAUTN06S5N008T-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb347018631414d0a0df7
IAUTN06S5N008TATMA1
Виробник: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Ta), 350A (Tj)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 100A, 10V
Power Dissipation (Max): 358W (Tc)
Vgs(th) (Max) @ Id: 3V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20280 pF @ 30 V
Qualification: AEC-Q101
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+221.53 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
IAUTN06S5N008TATMA1 Infineon-IAUTN06S5N008T-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb347018631414d0a0df7
IAUTN06S5N008TATMA1
Виробник: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Ta), 350A (Tj)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 100A, 10V
Power Dissipation (Max): 358W (Tc)
Vgs(th) (Max) @ Id: 3V @ 275µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20280 pF @ 30 V
Qualification: AEC-Q101
на замовлення 2780 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+532.60 грн
10+346.87 грн
100+261.10 грн
В кошику  од. на суму  грн.
BGA5H1BN6E6328XTSA1
BGA5H1BN6E6328XTSA1
Виробник: Infineon Technologies
Description: RF MMIC SUB 3 GHZ
Packaging: Tray
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.69GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.6V
Gain: 20dB
Current - Supply: 9.8mA
Noise Figure: 0.7dB
P1dB: -16dBm
Test Frequency: 2.5GHz
Supplier Device Package: PG-TSNP-6-10
товару немає в наявності
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ISA150233C03LMDSXTMA Infineon-ISA150233C03LMDS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2ed4aca62c5
ISA150233C03LMDSXTMA
Виробник: Infineon Technologies
Description: ISA150233C03LMDSXTMA
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 10.2A (Tc), 6.6A (Ta), 8.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 2300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V, 23.3mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 32nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
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ISA150233C03LMDSXTMA Infineon-ISA150233C03LMDS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2ed4aca62c5
ISA150233C03LMDSXTMA
Виробник: Infineon Technologies
Description: ISA150233C03LMDSXTMA
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 10.2A (Tc), 6.6A (Ta), 8.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 2300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V, 23.3mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 32nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
на замовлення 479 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+132.94 грн
10+81.68 грн
100+54.85 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ISA150233C03LMDSXTMA1 Infineon-ISA150233C03LMDS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2ed4aca62c5
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 10.2A (Tc), 6.6A (Ta), 8.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 2300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V, 23.3mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 32nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
товару немає в наявності
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AUIRF1324STRL INFN-S-A0002297093-1.pdf?t.download=true&u=5oefqw
AUIRF1324STRL
Виробник: Infineon Technologies
Description: AUIRF1324 - 20V-40V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 195A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
Qualification: AEC-Q101
на замовлення 316 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
97+227.93 грн
Мінімальне замовлення: 97
В кошику  од. на суму  грн.
TC387TP128F300SAEKXUMA2 Infineon-TC38x-DataSheet-v01_02-EN.pdf?fileId=5546d4626f229553016fb316e6cf748b
TC387TP128F300SAEKXUMA2
Виробник: Infineon Technologies
Description: IC MCU
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 1.25M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512K x 8
Core Processor: TriCore™
Data Converters: A/D 110 SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core, Dual-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+2493.53 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
TC387TP128F300SAEKXUMA2 Infineon-TC38x-DataSheet-v01_02-EN.pdf?fileId=5546d4626f229553016fb316e6cf748b
TC387TP128F300SAEKXUMA2
Виробник: Infineon Technologies
Description: IC MCU
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 1.25M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512K x 8
Core Processor: TriCore™
Data Converters: A/D 110 SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core, Dual-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3677.59 грн
10+2907.68 грн
25+2749.26 грн
100+2416.77 грн
250+2338.93 грн
В кошику  од. на суму  грн.
TC399XX256F300SBDLXUMA1 Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f
TC399XX256F300SBDLXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 100 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-516-10
DigiKey Programmable: Not Verified
товару немає в наявності
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TC399XP256F300SBDLXUMA1 Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f
TC399XP256F300SBDLXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.75M x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 100 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-516-10
DigiKey Programmable: Not Verified
товару немає в наявності
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TC397XP256F300SBDKXUMA1 Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f
TC397XP256F300SBDKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 76 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
DigiKey Programmable: Not Verified
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TC397XX256F300SBDKXUMA1 Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f
TC397XX256F300SBDKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 76 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
DigiKey Programmable: Not Verified
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BCM88359CUBGT
Виробник: Infineon Technologies
Description: 802.11AC HT80 RSDB + BT4.1 INDUS
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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IRF60B217 irf60b217
IRF60B217
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 36A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V
на замовлення 645 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
324+67.50 грн
Мінімальне замовлення: 324
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IRF60B217 irf60b217
IRF60B217
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 36A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V
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BSS131IXUSA1 448_BSS131I.pdf
BSS131IXUSA1
Виробник: Infineon Technologies
Description: BSS131IXUSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 109mA (Ta), 121mA (Tc)
Rds On (Max) @ Id, Vgs: 14Ohm @ 120mA, 10V
Power Dissipation (Max): 400mW (Ta), 440mW (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 56µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 120 V
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BSS131IXUSA1 448_BSS131I.pdf
BSS131IXUSA1
Виробник: Infineon Technologies
Description: BSS131IXUSA1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 109mA (Ta), 121mA (Tc)
Rds On (Max) @ Id, Vgs: 14Ohm @ 120mA, 10V
Power Dissipation (Max): 400mW (Ta), 440mW (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 56µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 120 V
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+24.01 грн
24+14.29 грн
100+8.95 грн
500+6.22 грн
1000+5.51 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
BSS83IXUSA1 448_BSS83I.pdf
BSS83IXUSA1
Виробник: Infineon Technologies
Description: BSS83IXUSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta), 550mA (Tc)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 300mA, 10V
Power Dissipation (Max): 400mW (Ta), 1.04W (Tc)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.09 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 30 V
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BSS83IXUSA1 448_BSS83I.pdf
BSS83IXUSA1
Виробник: Infineon Technologies
Description: BSS83IXUSA1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta), 550mA (Tc)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 300mA, 10V
Power Dissipation (Max): 400mW (Ta), 1.04W (Tc)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.09 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 30 V
на замовлення 2964 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+23.16 грн
25+13.38 грн
100+8.37 грн
500+5.80 грн
1000+5.13 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
XE164F96F80LACFXQMA1 XE164_V2.1_Aug2008.pdf
XE164F96F80LACFXQMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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AIGW40N65H5XKSA1 Infineon-AIGW40N65H5-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015d0809d9967f2c
AIGW40N65H5XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 650V 74A TO247-3-41
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/165ns
Switching Energy: 350µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Grade: Automotive
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Qualification: AEC-Q101
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
30+740.75 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
F3L420R12W3H7H21BPSA1 Infineon-F3L420R12W3H7_H21-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196fd8fb54733d7
F3L420R12W3H7H21BPSA1
Виробник: Infineon Technologies
Description: F3L420R12W3H7H21BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 240A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 26 µA
Input Capacitance (Cies) @ Vce: 330 pF @ 25 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6127.03 грн
В кошику  од. на суму  грн.
F3L420R12W4H7H11BPSA1 Infineon-F3L420R12W4H7_H11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196e91ba5d1228b
F3L420R12W4H7H11BPSA1
Виробник: Infineon Technologies
Description: F3L420R12W4H7H11BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.76V @ 15V, 250A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 26 µA
Input Capacitance (Cies) @ Vce: 47700 pF @ 25 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+12945.32 грн
6+11563.18 грн
12+11264.35 грн
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IRFP2907PBFXKMA1 Infineon-IRFP2907-DataSheet-v01_00-EN.pdf
IRFP2907PBFXKMA1
Виробник: Infineon Technologies
Description: PLANAR 40<-<100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 125A, 10V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO247-3-901
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 620 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
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ISCH54N04NM7VATMA1 448_ISCH54N04NM7V.pdf
ISCH54N04NM7VATMA1
Виробник: Infineon Technologies
Description: ISCH54N04NM7VATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 458A (Tc)
Rds On (Max) @ Id, Vgs: 0.5mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 113µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
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ISCH54N04NM7VATMA1 448_ISCH54N04NM7V.pdf
ISCH54N04NM7VATMA1
Виробник: Infineon Technologies
Description: ISCH54N04NM7VATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 458A (Tc)
Rds On (Max) @ Id, Vgs: 0.5mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 113µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
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CYT2BL4CXAQ0AZEGSTHUYA1 infineon-cyt2bl-traveo-tm-t2g-32-bit-automotive-mcu-based-on-arm-r-cortex-r--m4f-single-datasheet-en.pdf
Виробник: Infineon Technologies
Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tape & Reel (TR)
товару немає в наявності
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CYT2BL4CXAQ0AZEGSHQLA1 infineon-cyt2bl-traveo-tm-t2g-32-bit-automotive-mcu-based-on-arm-r-cortex-r--m4f-single-datasheet-en.pdf
Виробник: Infineon Technologies
Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tray
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TLE5046MTICAKLRHALA1
TLE5046MTICAKLRHALA1
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
на замовлення 1976 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+142.37 грн
5+121.07 грн
10+115.38 грн
25+101.90 грн
50+97.53 грн
100+93.55 грн
500+84.13 грн
1000+81.19 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE5046MTICAKLRHALA1
TLE5046MTICAKLRHALA1
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Box (TB)
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
TLE5046MTICPW2100HALA1
TLE5046MTICPW2100HALA1
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
на замовлення 1976 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+142.37 грн
5+121.07 грн
10+115.38 грн
25+101.90 грн
50+97.53 грн
100+93.55 грн
500+84.13 грн
1000+81.19 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF8304MTRPBF irf8304mpbf.pdf?fileId=5546d462533600a40153560d20db1d5d
IRF8304MTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 28A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V
Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DirectFET™ Isometric MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
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IRF8308MTRPBF irf8308mpbf.pdf?fileId=5546d462533600a40153560d319d1d61
IRF8308MTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 27A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4404 pF @ 15 V
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IRF830PBF irl620.pdf
IRF830PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 4.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
товару немає в наявності
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FF600R12KE4PBOSA1 Infineon-FF600R12KE4P-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601701f0f154740cf
FF600R12KE4PBOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 600A AG-62MM-1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: AG-62MM-1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 38 nF @ 25 V
на замовлення 128 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+13380.58 грн
Мінімальне замовлення: 2
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IPI320N20N3GAKSA1 IPP_B_I_320N20N3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f170124967064ba184a
IPI320N20N3GAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 34A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+3629.13 грн
Мінімальне замовлення: 6
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IRG8P25N120KD-EPBF IRG8P25N120KD%28-E%29PbF.pdf
IRG8P25N120KD-EPBF
Виробник: Infineon Technologies
Description: IGBT 1200V 40A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/170ns
Switching Energy: 800µJ (on), 900µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 180 W
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BSS84IXUSA1 448_BSS84I.pdf
BSS84IXUSA1
Виробник: Infineon Technologies
Description: BSS84IXUSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta), 290mA (Tc)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 180mA, 10V
Power Dissipation (Max): 400mW (Ta), 960mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 780 pC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V
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BSS84IXUSA1 448_BSS84I.pdf
BSS84IXUSA1
Виробник: Infineon Technologies
Description: BSS84IXUSA1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta), 290mA (Tc)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 180mA, 10V
Power Dissipation (Max): 400mW (Ta), 960mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 780 pC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V
на замовлення 2389 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+17.15 грн
33+10.08 грн
100+6.28 грн
500+4.31 грн
1000+3.80 грн
Мінімальне замовлення: 20
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TLE9166EQXUMA1 Infineon-TLE9166_Product_Overview-ProductOverview-v01_02-EN.pdf?fileId=8ac78c8c90530b3a01914711af523f80
TLE9166EQXUMA1
Виробник: Infineon Technologies
Description: DC_MOTOR_CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.1A, 3A, 5A, 7A, 8A
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6), High Side (5)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: PG-TSDSO-32-1
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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TLE9166EQXUMA1 Infineon-TLE9166_Product_Overview-ProductOverview-v01_02-EN.pdf?fileId=8ac78c8c90530b3a01914711af523f80
TLE9166EQXUMA1
Виробник: Infineon Technologies
Description: DC_MOTOR_CONTROL
Packaging: Cut Tape (CT)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.1A, 3A, 5A, 7A, 8A
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6), High Side (5)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: PG-TSDSO-32-1
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
на замовлення 21 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+244.43 грн
10+176.41 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IAUZN04S7L046ATMA1 Infineon-IAUZN04S7L046-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192a79ecf4a6acd
IAUZN04S7L046ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tj)
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 10µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 20 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+19.93 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
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