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IR38060MGM18TRPXUMA1 Infineon Technologies Description: IC REG BUCK ADJ 6A 26PQFN
Packaging: Tape & Reel (TR)
Package / Case: 26-PowerTFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 1.5MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 26-PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14V
Voltage - Input (Min): 1.2V
Voltage - Output (Min/Fixed): 0.5V
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IDK05G65C5XTMA1 IDK05G65C5XTMA1 Infineon Technologies Infineon-IDK05G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142ec794447014e Description: DIODE SIL CARB 650V 5A PGTO2632
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 160pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 830 µA @ 650 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
229+96.16 грн
Мінімальне замовлення: 229
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IDK05G65C5XTMA2 IDK05G65C5XTMA2 Infineon Technologies Infineon-IDK05G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142ec794447014e Description: DIODE SIL CARB 650V 5A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 160pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 830 µA @ 650 V
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CY7C4215V-15ASXC CY7C4215V-15ASXC Infineon Technologies CY7C4xx5V_RevC.pdf Description: IC FIFO SYNC 512X18 11NS 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 9K (512 x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 11ns
Current - Supply (Max): 30mA
Supplier Device Package: 64-TQFP (14x14)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
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CY7C421-10JXC CY7C421-10JXC Infineon Technologies CY7C419%2C21%2C25%2C29%2C33.pdf Description: IC FIFO ASYNC 512X9 10NS 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Asynchronous
Memory Size: 4.5K (512 x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 50MHz
Access Time: 10ns
Current - Supply (Max): 85mA
Supplier Device Package: 32-PLCC (11.43x13.97)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: No
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
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CY7C4211-15JXC CY7C4211-15JXC Infineon Technologies CY7C4xx1_RevC.pdf Description: IC FIFO SYNC 512X9 10NS 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (512 x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 35mA
Supplier Device Package: 32-PLCC (11.43x13.97)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
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TLE4972EVALVERBARTOBO1 TLE4972EVALVERBARTOBO1 Infineon Technologies Description: TLE4972 EVAL VER BAR
Packaging: Bulk
Interface: Analog
Contents: Board(s)
Voltage - Supply: 3.1V ~ 3.3V
Sensor Type: Current Sensor
Utilized IC / Part: TLE4972
Embedded: No
Sensing Range: 842A
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+73325.90 грн
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TLE4973EVALVERBARTOBO1 TLE4973EVALVERBARTOBO1 Infineon Technologies Description: TLE4973 EVAL VER BAR
Packaging: Bulk
Interface: Analog
Contents: Board(s)
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Current Sensor
Utilized IC / Part: TLE4973
Embedded: No
Sensing Range: 920A
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+73325.90 грн
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D1821SH45TS05XOSA1 D1821SH45TS05XOSA1 Infineon Technologies Soft_Recovery_Freewheeling_Diodes-PB_v03_4-21-16.pdf Description: DIODE STD 4500V 1710A BGD10026K1
Packaging: Bulk
Package / Case: DO-200, Variant
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1710A
Supplier Device Package: BG-D10026K-1
Voltage - DC Reverse (Vr) (Max): 4500 V
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EVALISSI20R02HTSTOBO1 EVALISSI20R02HTSTOBO1 Infineon Technologies Description: EVAL BOARD FOR ISSI20R02H
Packaging: Box
Function: Isolator
Type: Interface
Contents: Board(s)
Utilized IC / Part: iSSI20R02H
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Embedded: No
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+13499.32 грн
В кошику  од. на суму  грн.
EVALISSI20R02HCSTOBO1 EVALISSI20R02HCSTOBO1 Infineon Technologies Infineon-EVAL-iSSI20R02HCS-UserManual-v01_00-EN.pdf?fileId=8ac78c8c901008d101903485f2631a7e Description: EVAL BOARD FOR ISSI20R02H
Packaging: Box
Function: Isolator
Type: Interface
Contents: Board(s)
Utilized IC / Part: iSSI20R02H
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Embedded: No
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+13499.32 грн
В кошику  од. на суму  грн.
EVALISSI20R11HTOBO1 EVALISSI20R11HTOBO1 Infineon Technologies Description: EVAL BOARD FOR ISSI20R11H
Packaging: Box
Function: Isolator
Type: Interface
Contents: Board(s)
Utilized IC / Part: iSSI20R11H
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Embedded: No
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+13617.89 грн
В кошику  од. на суму  грн.
EVALISSI20R03HTOBO1 EVALISSI20R03HTOBO1 Infineon Technologies Description: EVAL BOARD FOR ISSI20R03H
Packaging: Box
Function: Isolator
Type: Interface
Contents: Board(s)
Utilized IC / Part: iSSI20R03H
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Embedded: No
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+13617.89 грн
В кошику  од. на суму  грн.
FF200R06KE3HOSA1 FF200R06KE3HOSA1 Infineon Technologies Infineon-FF200R06KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b434a07960d4 Description: IGBT MOD 600V 260A 680W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 260 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 5 mA
на замовлення 164 шт:
термін постачання 21-31 дні (днів)
4+6480.87 грн
Мінімальне замовлення: 4
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BCR402W12VLEDBOARDTOBO1 BCR402W12VLEDBOARDTOBO1 Infineon Technologies Infineon-BCR402W-LED-Driver-Rev2.0.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407c5054c0192 Description: EVAL BOARD FOR BCR402W
Packaging: Box
Voltage - Input: 12V
Contents: Board(s)
Current - Output / Channel: 20mA
Utilized IC / Part: BCR402W
Outputs and Type: 1 Non-Isolated Output
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+1328.21 грн
В кошику  од. на суму  грн.
BCR402W24VLEDBOARDTOBO1 BCR402W24VLEDBOARDTOBO1 Infineon Technologies Infineon-BCR402W-LED-Driver-Rev2.0.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407c5054c0192 Description: EVAL BOARD FOR BCR402W
Packaging: Box
Voltage - Input: 24V
Contents: Board(s)
Current - Output / Channel: 20mA
Utilized IC / Part: BCR402W
Outputs and Type: 1 Non-Isolated Output
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+1328.21 грн
В кошику  од. на суму  грн.
BDP954H6327XTSA1 BDP954H6327XTSA1 Infineon Technologies bdp948_bdp950_bdp954.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156149b3e81f67 Description: TRANS PNP 100V 3A PG-SOT223-4-10
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4-10
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
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PVG613PBF PVG613PBF Infineon Technologies IRSD-S-A0001055688-1.pdf?t.download=true&u=5oefqw Description: PVG613 - PHOTOVOLTAIC RELAY
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 1 A
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 500 mOhms
на замовлення 5887 шт:
термін постачання 21-31 дні (днів)
55+420.53 грн
Мінімальне замовлення: 55
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PVN013PBF PVN013PBF Infineon Technologies IRSD-S-A0001054358-1.pdf?t.download=true&u=5oefqw Description: PVN013 - PHOTOVOLTAIC RELAY
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 2.5 A
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 100 mOhms
на замовлення 61 шт:
термін постачання 21-31 дні (днів)
61+420.53 грн
Мінімальне замовлення: 61
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IPB100N04S204ATMA4 IPB100N04S204ATMA4 Infineon Technologies IPx100N04S2-04.pdf Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
173+132.56 грн
Мінімальне замовлення: 173
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ISS75EP06LMAXTSA1 Infineon Technologies Description: SMALL SIGNAL MOSFETS
Packaging: Tape & Reel (TR)
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TDA5220XUMA1 TDA5220XUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: RF RX ASK/FSK 810-870MHZ 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -110dBm
Mounting Type: Surface Mount
Frequency: 810MHz ~ 870MHz, 400MHz ~ 440MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: RKE, Remote Control Systems
Current - Receiving: 5.9mA
Data Rate (Max): 100kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
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TDA5220XUMA1 TDA5220XUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: RF RX ASK/FSK 810-870MHZ 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -110dBm
Mounting Type: Surface Mount
Frequency: 810MHz ~ 870MHz, 400MHz ~ 440MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: RKE, Remote Control Systems
Current - Receiving: 5.9mA
Data Rate (Max): 100kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
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BSB053N03LP G BSB053N03LP G Infineon Technologies BSB053N03LP_G.pdf Description: MOSFET N-CH 30V 17A/71A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 15 V
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PVT312PBF PVT312PBF Infineon Technologies pvt312.pdf?fileId=5546d462533600a4015356841f1c2960 Description: SSR RELAY SPST-NO 190MA 0-250V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 190 mA
Approval Agency: UL
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 10 Ohms
на замовлення 137 шт:
термін постачання 21-31 дні (днів)
1+487.04 грн
10+418.34 грн
25+399.51 грн
50+362.06 грн
100+349.64 грн
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IDK09G65C5XTMA1 IDK09G65C5XTMA1 Infineon Technologies Infineon-IDK09G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142fbaec0384e59 Description: DIODE SIL CARB 650V 9A PGTO2632
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 270pF @ 1V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 9 A
Current - Reverse Leakage @ Vr: 1.6 mA @ 650 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
127+180.55 грн
Мінімальне замовлення: 127
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IDK09G65C5XTMA2 IDK09G65C5XTMA2 Infineon Technologies Infineon-IDK09G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142fbaec0384e59 Description: DIODE SIL CARB 650V 9A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 270pF @ 1V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 9 A
Current - Reverse Leakage @ Vr: 1.6 mA @ 650 V
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IDH05G65C5XKSA2 IDH05G65C5XKSA2 Infineon Technologies IDH05G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a304339dcf4b1013a034bd32d595e Description: DIODE SIL CARB 650V 5A PGTO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 160pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
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IDK03G65C5XTMA1 IDK03G65C5XTMA1 Infineon Technologies Infineon-IDK03G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142eb7618470089 Description: DIODE SIL CARB 650V 3A PGTO2632
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 100pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 650 V
на замовлення 9168 шт:
термін постачання 21-31 дні (днів)
359+63.99 грн
Мінімальне замовлення: 359
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IPDQ60R007CM8XTMA1 IPDQ60R007CM8XTMA1 Infineon Technologies Description: IPDQ60R007CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 288A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 100A, 10V
Power Dissipation (Max): 1.249kW (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 3.24mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 370 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16385 pF @ 400 V
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IPDQ60R007CM8XTMA1 IPDQ60R007CM8XTMA1 Infineon Technologies Description: IPDQ60R007CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 288A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 100A, 10V
Power Dissipation (Max): 1.249kW (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 3.24mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 370 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16385 pF @ 400 V
на замовлення 403 шт:
термін постачання 21-31 дні (днів)
1+1722.13 грн
10+1416.26 грн
100+1238.70 грн
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ISC165N15NM6ATMA1 Infineon Technologies Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
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TLE4971MS2GOTOBO1 TLE4971MS2GOTOBO1 Infineon Technologies Infineon-TLE4971T-DS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8779172a018799e3198002e7 Description: TLE4971_MS2GO
Packaging: Bulk
Interface: Analog
Contents: Board(s)
Voltage - Supply: 3.1V ~ 3.5V
Sensor Type: Current Sensor
Utilized IC / Part: TLE4971
Embedded: No
Sensing Range: ±25A
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+1649.71 грн
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IPB035N10NF2SATMA1 Infineon Technologies Infineon-IPB035N10NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194fe49b5c07666 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 113µA
Supplier Device Package: PG-TO263-3-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V
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IPB035N10NF2SATMA1 Infineon Technologies Infineon-IPB035N10NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194fe49b5c07666 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 113µA
Supplier Device Package: PG-TO263-3-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V
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CY8C20647-24LQXI CY8C20647-24LQXI Infineon Technologies Infineon-CY8C20xx7_S_1.8_V_CapSense_Controller_with_SmartSense_Auto-tuning_31_Buttons_6_Sliders_Proximity_Sensors-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca484942ea&utm_source=cypress&utm_medium=referral&utm_camp Description: IC CAPSENCE 16K FLASH 48QFN
Packaging: Bulk
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 33
DigiKey Programmable: Not Verified
на замовлення 1475 шт:
термін постачання 21-31 дні (днів)
94+243.03 грн
Мінімальне замовлення: 94
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S26KL256SDABHB030 S26KL256SDABHB030 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY8CTMA461-48LQI CY8CTMA461-48LQI Infineon Technologies Description: IC TRUETOUCH CAPSENSE 48QFN
Packaging: Tray
DigiKey Programmable: Not Verified
на замовлення 5060 шт:
термін постачання 21-31 дні (днів)
83+278.06 грн
Мінімальне замовлення: 83
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CY8CTMA140-LQI-01T CY8CTMA140-LQI-01T Infineon Technologies CY8CTMA140.pdf Description: IC TRUETOUCH CAPSENSE 36QFN
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
73+316.92 грн
Мінімальне замовлення: 73
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IMLT65R033M2HXTMA1 IMLT65R033M2HXTMA1 Infineon Technologies Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1213 pF @ 400 V
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IMLT65R026M2HXTMA1 IMLT65R026M2HXTMA1 Infineon Technologies Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
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BTG7003A1EPWDBTOBO1 BTG7003A1EPWDBTOBO1 Infineon Technologies Description: BTG7003A-1EPW DB
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7003A-1EPW
Platform: Arduino
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+3763.38 грн
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IGC019S06S1XTMA1 Infineon Technologies Description: MV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 35A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 12mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 30 V
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IGT65R025D2ATMA1 Infineon Technologies Infineon-IGT65R025D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a57bd2f0307 Description: IGT65R025D2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 6.1mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V
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IGT65R025D2ATMA1 Infineon Technologies Infineon-IGT65R025D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a57bd2f0307 Description: IGT65R025D2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 6.1mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V
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IRFP048NPBF IRFP048NPBF Infineon Technologies IRFP048NPbF.pdf Description: MOSFET N-CH 55V 64A TO247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 37A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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CY7C1361KVE33-100AXE CY7C1361KVE33-100AXE Infineon Technologies Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, Standard
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 256K x 36
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CY8C4025LQI-S413T CY8C4025LQI-S413T Infineon Technologies Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1 Description: IC MCU 32BIT 32KB FLASH 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
DigiKey Programmable: Not Verified
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D291S45TXPSA1 D291S45TXPSA1 Infineon Technologies Infineon-D291S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42fb7814d22 Description: DIODE STANDARD 4500V 445A
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 445A
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 4.15 V @ 1200 A
Current - Reverse Leakage @ Vr: 50 mA @ 4500 V
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CY7C63723-SC CY7C63723-SC Infineon Technologies CY7C63722%2C23%2C43.pdf Description: IC MCU 8K LS USB/PS-2 18-SOIC
Packaging: Tube
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: PS/2, USB
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Controller Series: CY7C637xx
Program Memory Type: OTP (8kB)
Applications: USB Microcontroller
Core Processor: M8B
Supplier Device Package: 18-SOIC
Number of I/O: 10
DigiKey Programmable: Not Verified
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CY7C63723-PXC CY7C63723-PXC Infineon Technologies CY7C63722%2C23%2C43.pdf Description: IC MCU 8K USB/PS2 LS 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Interface: PS/2, USB
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Controller Series: CY7C637xx
Program Memory Type: OTP (8kB)
Applications: USB Microcontroller
Core Processor: M8B
Supplier Device Package: 18-PDIP
Number of I/O: 10
DigiKey Programmable: Not Verified
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CYUSB4013FCAXITXUMA1 Infineon Technologies Description: USB-DATA
Packaging: Tape & Reel (TR)
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AUIRF9Z34N AUIRF9Z34N Infineon Technologies AUIRF9Z34N.pdf Description: MOSFET P-CH 55V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Qualification: AEC-Q101
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AIMDQ75R027M1HXUMA1 AIMDQ75R027M1HXUMA1 Infineon Technologies Infineon-AIMDQ75R027M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef09e6c392acd Description: AIMDQ75R027M1HXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tj)
Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 8.8mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V
Qualification: AEC-Q101
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AIMDQ75R027M1HXUMA1 AIMDQ75R027M1HXUMA1 Infineon Technologies Infineon-AIMDQ75R027M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef09e6c392acd Description: AIMDQ75R027M1HXUMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tj)
Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 8.8mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V
Qualification: AEC-Q101
на замовлення 471 шт:
термін постачання 21-31 дні (днів)
1+986.80 грн
10+723.11 грн
100+689.92 грн
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S29GL256S10DHI013 S29GL256S10DHI013 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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CY8C4147AZAS585XQLA1 CY8C4147AZAS585XQLA1 Infineon Technologies Infineon-CY8C4149AZS-S575-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
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CY8C4148AZAS585XQLA1 CY8C4148AZAS585XQLA1 Infineon Technologies Infineon-CY8C4149AZS-S575-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
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CY8C4149AZAS585XQLA1 CY8C4149AZAS585XQLA1 Infineon Technologies Infineon-CY8C4149AZS-S575-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e Description: IC MCU 32BIT 384KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
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IRSM515-055DA2 Infineon Technologies irsm505-055.pdf?fileId=5546d462533600a40153567bf5dc287d Description: IC HALF BRIDGE DRIVER 2.4A 23DIP
Features: Bootstrap Circuit
Packaging: Tube
Package / Case: 32-PowerDIP Module, 23 Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1.3Ohm
Applications: AC Motors
Current - Output / Channel: 2.4A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
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IR38060MGM18TRPXUMA1
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 6A 26PQFN
Packaging: Tape & Reel (TR)
Package / Case: 26-PowerTFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 1.5MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 26-PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14V
Voltage - Input (Min): 1.2V
Voltage - Output (Min/Fixed): 0.5V
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IDK05G65C5XTMA1 Infineon-IDK05G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142ec794447014e
IDK05G65C5XTMA1
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 5A PGTO2632
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 160pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 830 µA @ 650 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
229+96.16 грн
Мінімальне замовлення: 229
В кошику  од. на суму  грн.
IDK05G65C5XTMA2 Infineon-IDK05G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142ec794447014e
IDK05G65C5XTMA2
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 5A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 160pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 830 µA @ 650 V
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CY7C4215V-15ASXC CY7C4xx5V_RevC.pdf
CY7C4215V-15ASXC
Виробник: Infineon Technologies
Description: IC FIFO SYNC 512X18 11NS 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 9K (512 x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 11ns
Current - Supply (Max): 30mA
Supplier Device Package: 64-TQFP (14x14)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
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CY7C421-10JXC CY7C419%2C21%2C25%2C29%2C33.pdf
CY7C421-10JXC
Виробник: Infineon Technologies
Description: IC FIFO ASYNC 512X9 10NS 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Asynchronous
Memory Size: 4.5K (512 x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 50MHz
Access Time: 10ns
Current - Supply (Max): 85mA
Supplier Device Package: 32-PLCC (11.43x13.97)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: No
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
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CY7C4211-15JXC CY7C4xx1_RevC.pdf
CY7C4211-15JXC
Виробник: Infineon Technologies
Description: IC FIFO SYNC 512X9 10NS 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (512 x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 35mA
Supplier Device Package: 32-PLCC (11.43x13.97)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
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TLE4972EVALVERBARTOBO1
TLE4972EVALVERBARTOBO1
Виробник: Infineon Technologies
Description: TLE4972 EVAL VER BAR
Packaging: Bulk
Interface: Analog
Contents: Board(s)
Voltage - Supply: 3.1V ~ 3.3V
Sensor Type: Current Sensor
Utilized IC / Part: TLE4972
Embedded: No
Sensing Range: 842A
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+73325.90 грн
В кошику  од. на суму  грн.
TLE4973EVALVERBARTOBO1
TLE4973EVALVERBARTOBO1
Виробник: Infineon Technologies
Description: TLE4973 EVAL VER BAR
Packaging: Bulk
Interface: Analog
Contents: Board(s)
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Current Sensor
Utilized IC / Part: TLE4973
Embedded: No
Sensing Range: 920A
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+73325.90 грн
В кошику  од. на суму  грн.
D1821SH45TS05XOSA1 Soft_Recovery_Freewheeling_Diodes-PB_v03_4-21-16.pdf
D1821SH45TS05XOSA1
Виробник: Infineon Technologies
Description: DIODE STD 4500V 1710A BGD10026K1
Packaging: Bulk
Package / Case: DO-200, Variant
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1710A
Supplier Device Package: BG-D10026K-1
Voltage - DC Reverse (Vr) (Max): 4500 V
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EVALISSI20R02HTSTOBO1
EVALISSI20R02HTSTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR ISSI20R02H
Packaging: Box
Function: Isolator
Type: Interface
Contents: Board(s)
Utilized IC / Part: iSSI20R02H
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Embedded: No
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+13499.32 грн
В кошику  од. на суму  грн.
EVALISSI20R02HCSTOBO1 Infineon-EVAL-iSSI20R02HCS-UserManual-v01_00-EN.pdf?fileId=8ac78c8c901008d101903485f2631a7e
EVALISSI20R02HCSTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR ISSI20R02H
Packaging: Box
Function: Isolator
Type: Interface
Contents: Board(s)
Utilized IC / Part: iSSI20R02H
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Embedded: No
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+13499.32 грн
В кошику  од. на суму  грн.
EVALISSI20R11HTOBO1
EVALISSI20R11HTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR ISSI20R11H
Packaging: Box
Function: Isolator
Type: Interface
Contents: Board(s)
Utilized IC / Part: iSSI20R11H
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Embedded: No
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+13617.89 грн
В кошику  од. на суму  грн.
EVALISSI20R03HTOBO1
EVALISSI20R03HTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR ISSI20R03H
Packaging: Box
Function: Isolator
Type: Interface
Contents: Board(s)
Utilized IC / Part: iSSI20R03H
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Embedded: No
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+13617.89 грн
В кошику  од. на суму  грн.
FF200R06KE3HOSA1 Infineon-FF200R06KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b434a07960d4
FF200R06KE3HOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 600V 260A 680W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 260 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 5 mA
на замовлення 164 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+6480.87 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BCR402W12VLEDBOARDTOBO1 Infineon-BCR402W-LED-Driver-Rev2.0.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407c5054c0192
BCR402W12VLEDBOARDTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR BCR402W
Packaging: Box
Voltage - Input: 12V
Contents: Board(s)
Current - Output / Channel: 20mA
Utilized IC / Part: BCR402W
Outputs and Type: 1 Non-Isolated Output
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1328.21 грн
В кошику  од. на суму  грн.
BCR402W24VLEDBOARDTOBO1 Infineon-BCR402W-LED-Driver-Rev2.0.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407c5054c0192
BCR402W24VLEDBOARDTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR BCR402W
Packaging: Box
Voltage - Input: 24V
Contents: Board(s)
Current - Output / Channel: 20mA
Utilized IC / Part: BCR402W
Outputs and Type: 1 Non-Isolated Output
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1328.21 грн
В кошику  од. на суму  грн.
BDP954H6327XTSA1 bdp948_bdp950_bdp954.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156149b3e81f67
BDP954H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 100V 3A PG-SOT223-4-10
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4-10
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
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PVG613PBF IRSD-S-A0001055688-1.pdf?t.download=true&u=5oefqw
PVG613PBF
Виробник: Infineon Technologies
Description: PVG613 - PHOTOVOLTAIC RELAY
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 1 A
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 500 mOhms
на замовлення 5887 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
55+420.53 грн
Мінімальне замовлення: 55
В кошику  од. на суму  грн.
PVN013PBF IRSD-S-A0001054358-1.pdf?t.download=true&u=5oefqw
PVN013PBF
Виробник: Infineon Technologies
Description: PVN013 - PHOTOVOLTAIC RELAY
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 2.5 A
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 100 mOhms
на замовлення 61 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
61+420.53 грн
Мінімальне замовлення: 61
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IPB100N04S204ATMA4 IPx100N04S2-04.pdf
IPB100N04S204ATMA4
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
173+132.56 грн
Мінімальне замовлення: 173
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ISS75EP06LMAXTSA1
Виробник: Infineon Technologies
Description: SMALL SIGNAL MOSFETS
Packaging: Tape & Reel (TR)
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TDA5220XUMA1 fundamentals-of-power-semiconductors
TDA5220XUMA1
Виробник: Infineon Technologies
Description: RF RX ASK/FSK 810-870MHZ 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -110dBm
Mounting Type: Surface Mount
Frequency: 810MHz ~ 870MHz, 400MHz ~ 440MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: RKE, Remote Control Systems
Current - Receiving: 5.9mA
Data Rate (Max): 100kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
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TDA5220XUMA1 fundamentals-of-power-semiconductors
TDA5220XUMA1
Виробник: Infineon Technologies
Description: RF RX ASK/FSK 810-870MHZ 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -110dBm
Mounting Type: Surface Mount
Frequency: 810MHz ~ 870MHz, 400MHz ~ 440MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: RKE, Remote Control Systems
Current - Receiving: 5.9mA
Data Rate (Max): 100kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
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BSB053N03LP G BSB053N03LP_G.pdf
BSB053N03LP G
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 17A/71A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 15 V
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PVT312PBF pvt312.pdf?fileId=5546d462533600a4015356841f1c2960
PVT312PBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 190MA 0-250V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 190 mA
Approval Agency: UL
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 10 Ohms
на замовлення 137 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+487.04 грн
10+418.34 грн
25+399.51 грн
50+362.06 грн
100+349.64 грн
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IDK09G65C5XTMA1 Infineon-IDK09G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142fbaec0384e59
IDK09G65C5XTMA1
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 9A PGTO2632
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 270pF @ 1V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 9 A
Current - Reverse Leakage @ Vr: 1.6 mA @ 650 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
127+180.55 грн
Мінімальне замовлення: 127
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IDK09G65C5XTMA2 Infineon-IDK09G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142fbaec0384e59
IDK09G65C5XTMA2
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 9A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 270pF @ 1V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 9 A
Current - Reverse Leakage @ Vr: 1.6 mA @ 650 V
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IDH05G65C5XKSA2 IDH05G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a304339dcf4b1013a034bd32d595e
IDH05G65C5XKSA2
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 5A PGTO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 160pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
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IDK03G65C5XTMA1 Infineon-IDK03G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142eb7618470089
IDK03G65C5XTMA1
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 3A PGTO2632
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 100pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 650 V
на замовлення 9168 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
359+63.99 грн
Мінімальне замовлення: 359
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IPDQ60R007CM8XTMA1
IPDQ60R007CM8XTMA1
Виробник: Infineon Technologies
Description: IPDQ60R007CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 288A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 100A, 10V
Power Dissipation (Max): 1.249kW (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 3.24mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 370 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16385 pF @ 400 V
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IPDQ60R007CM8XTMA1
IPDQ60R007CM8XTMA1
Виробник: Infineon Technologies
Description: IPDQ60R007CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 288A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 100A, 10V
Power Dissipation (Max): 1.249kW (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 3.24mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 370 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16385 pF @ 400 V
на замовлення 403 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1722.13 грн
10+1416.26 грн
100+1238.70 грн
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ISC165N15NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
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TLE4971MS2GOTOBO1 Infineon-TLE4971T-DS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8779172a018799e3198002e7
TLE4971MS2GOTOBO1
Виробник: Infineon Technologies
Description: TLE4971_MS2GO
Packaging: Bulk
Interface: Analog
Contents: Board(s)
Voltage - Supply: 3.1V ~ 3.5V
Sensor Type: Current Sensor
Utilized IC / Part: TLE4971
Embedded: No
Sensing Range: ±25A
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1649.71 грн
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IPB035N10NF2SATMA1 Infineon-IPB035N10NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194fe49b5c07666
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 113µA
Supplier Device Package: PG-TO263-3-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V
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IPB035N10NF2SATMA1 Infineon-IPB035N10NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194fe49b5c07666
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 113µA
Supplier Device Package: PG-TO263-3-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V
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CY8C20647-24LQXI Infineon-CY8C20xx7_S_1.8_V_CapSense_Controller_with_SmartSense_Auto-tuning_31_Buttons_6_Sliders_Proximity_Sensors-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca484942ea&utm_source=cypress&utm_medium=referral&utm_camp
CY8C20647-24LQXI
Виробник: Infineon Technologies
Description: IC CAPSENCE 16K FLASH 48QFN
Packaging: Bulk
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 33
DigiKey Programmable: Not Verified
на замовлення 1475 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
94+243.03 грн
Мінімальне замовлення: 94
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S26KL256SDABHB030 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f
S26KL256SDABHB030
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY8CTMA461-48LQI
CY8CTMA461-48LQI
Виробник: Infineon Technologies
Description: IC TRUETOUCH CAPSENSE 48QFN
Packaging: Tray
DigiKey Programmable: Not Verified
на замовлення 5060 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
83+278.06 грн
Мінімальне замовлення: 83
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CY8CTMA140-LQI-01T CY8CTMA140.pdf
CY8CTMA140-LQI-01T
Виробник: Infineon Technologies
Description: IC TRUETOUCH CAPSENSE 36QFN
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
73+316.92 грн
Мінімальне замовлення: 73
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IMLT65R033M2HXTMA1
IMLT65R033M2HXTMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1213 pF @ 400 V
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IMLT65R026M2HXTMA1
IMLT65R026M2HXTMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
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BTG7003A1EPWDBTOBO1
BTG7003A1EPWDBTOBO1
Виробник: Infineon Technologies
Description: BTG7003A-1EPW DB
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7003A-1EPW
Platform: Arduino
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3763.38 грн
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IGC019S06S1XTMA1
Виробник: Infineon Technologies
Description: MV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 35A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 12mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 30 V
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IGT65R025D2ATMA1 Infineon-IGT65R025D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a57bd2f0307
Виробник: Infineon Technologies
Description: IGT65R025D2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 6.1mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V
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IGT65R025D2ATMA1 Infineon-IGT65R025D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a57bd2f0307
Виробник: Infineon Technologies
Description: IGT65R025D2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 6.1mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V
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IRFP048NPBF IRFP048NPbF.pdf
IRFP048NPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 64A TO247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 37A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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CY7C1361KVE33-100AXE
CY7C1361KVE33-100AXE
Виробник: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, Standard
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 256K x 36
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CY8C4025LQI-S413T Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1
CY8C4025LQI-S413T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
DigiKey Programmable: Not Verified
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D291S45TXPSA1 Infineon-D291S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42fb7814d22
D291S45TXPSA1
Виробник: Infineon Technologies
Description: DIODE STANDARD 4500V 445A
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 445A
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 4.15 V @ 1200 A
Current - Reverse Leakage @ Vr: 50 mA @ 4500 V
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CY7C63723-SC CY7C63722%2C23%2C43.pdf
CY7C63723-SC
Виробник: Infineon Technologies
Description: IC MCU 8K LS USB/PS-2 18-SOIC
Packaging: Tube
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: PS/2, USB
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Controller Series: CY7C637xx
Program Memory Type: OTP (8kB)
Applications: USB Microcontroller
Core Processor: M8B
Supplier Device Package: 18-SOIC
Number of I/O: 10
DigiKey Programmable: Not Verified
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CY7C63723-PXC CY7C63722%2C23%2C43.pdf
CY7C63723-PXC
Виробник: Infineon Technologies
Description: IC MCU 8K USB/PS2 LS 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Interface: PS/2, USB
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Controller Series: CY7C637xx
Program Memory Type: OTP (8kB)
Applications: USB Microcontroller
Core Processor: M8B
Supplier Device Package: 18-PDIP
Number of I/O: 10
DigiKey Programmable: Not Verified
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CYUSB4013FCAXITXUMA1
Виробник: Infineon Technologies
Description: USB-DATA
Packaging: Tape & Reel (TR)
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AUIRF9Z34N AUIRF9Z34N.pdf
AUIRF9Z34N
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Qualification: AEC-Q101
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AIMDQ75R027M1HXUMA1 Infineon-AIMDQ75R027M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef09e6c392acd
AIMDQ75R027M1HXUMA1
Виробник: Infineon Technologies
Description: AIMDQ75R027M1HXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tj)
Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 8.8mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V
Qualification: AEC-Q101
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AIMDQ75R027M1HXUMA1 Infineon-AIMDQ75R027M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef09e6c392acd
AIMDQ75R027M1HXUMA1
Виробник: Infineon Technologies
Description: AIMDQ75R027M1HXUMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tj)
Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 8.8mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V
Qualification: AEC-Q101
на замовлення 471 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+986.80 грн
10+723.11 грн
100+689.92 грн
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S29GL256S10DHI013 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL256S10DHI013
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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CY8C4147AZAS585XQLA1 Infineon-CY8C4149AZS-S575-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e
CY8C4147AZAS585XQLA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
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CY8C4148AZAS585XQLA1 Infineon-CY8C4149AZS-S575-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e
CY8C4148AZAS585XQLA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
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CY8C4149AZAS585XQLA1 Infineon-CY8C4149AZS-S575-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e
CY8C4149AZAS585XQLA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 384KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
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IRSM515-055DA2 irsm505-055.pdf?fileId=5546d462533600a40153567bf5dc287d
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 2.4A 23DIP
Features: Bootstrap Circuit
Packaging: Tube
Package / Case: 32-PowerDIP Module, 23 Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1.3Ohm
Applications: AC Motors
Current - Output / Channel: 2.4A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
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