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S29GL01GS11DHB023 S29GL01GS11DHB023 Infineon Technologies Infineon-S29GL01GS_S29GL512S_S29GL256S_S29GL128S_128_Mb_256_Mb_512_Mb_1_Gb_GL-S_MIRRORBIT_TM_Flash_Parallel_3-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5 Description: IC FLASH 1GBIT CFI 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 110 ns
Memory Organization: 128M x 8
Qualification: AEC-Q100
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IS29GL01GS-11DHB01 IS29GL01GS-11DHB01 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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CYPD7191-40LDXST CYPD7191-40LDXST Infineon Technologies Infineon-CYPD7191-40LDXS_EZ-PD_CCG7S_Automotive_single-port_USB_Type-C_with_PD_and_buck-boost_controller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c85ecb34701863803ba481a9e Description: TYPE-C - AUTO
Packaging: Cut Tape (CT)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4V ~ 24V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB), ROM (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 13
на замовлення 2460 шт:
термін постачання 21-31 дні (днів)
1+421.65 грн
10+310.84 грн
25+287.16 грн
100+245.01 грн
250+233.35 грн
500+226.32 грн
1000+216.92 грн
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CY15B256J-SXAT CY15B256J-SXAT Infineon Technologies Infineon-CY15B256J_256_Kbit_(32K_8)_Automotive_Serial_(I2C)_F_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf69af49d8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 256KBIT I2C 3.4MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 3.4 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: I2C
Access Time: 130 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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CY15B256J-SXET CY15B256J-SXET Infineon Technologies Infineon-CY15B256J-SXE-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee624b26e3a Description: IC FRAM 256KBIT I2C 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 3.4 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: I2C
Access Time: 130 ns
Memory Organization: 32K x 8
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CY15B201QN-50SXET CY15B201QN-50SXET Infineon Technologies Infineon-CY15B201QN-50SXE_CY15B201QN-50SXET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85ecb34701864fd51d263d14 Description: IC FRAM 1MBIT SPI 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 50 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Access Time: 8 ns
Memory Organization: 128K x 8
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CY15B201QN-50SXE CY15B201QN-50SXE Infineon Technologies Infineon-CY15B201QN-50SXE_CY15B201QN-50SXET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85ecb34701864fd51d263d14 Description: IC FRAM 1MBIT SPI 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 50 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Access Time: 8 ns
Memory Organization: 128K x 8
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IRF7457PBF IRF7457PBF Infineon Technologies irf7457pbf.pdf?fileId=5546d462533600a4015355feb4521bf8 Description: MOSFET N-CH 20V 15A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 10 V
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IRGS4064DPBF IRGS4064DPBF Infineon Technologies IRGS4064DPbF.pdf Description: IGBT TRENCH 600V 20A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.91V @ 15V, 10A
Supplier Device Package: D2PAK
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/79ns
Switching Energy: 29µJ (on), 200µJ (off)
Test Condition: 400V, 10A, 22Ohm, 15V
Gate Charge: 32 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 101 W
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IMZC120R022M2HXKSA1 IMZC120R022M2HXKSA1 Infineon Technologies IMZC120R022M2HXKSA1.pdf Description: SICFET N-CH 1200V 80A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 32A, 18V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 10.1mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 800 V
на замовлення 480 шт:
термін постачання 21-31 дні (днів)
1+1095.62 грн
30+649.49 грн
120+575.28 грн
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DCDCSBCBOARDTOBO1 Infineon Technologies Description: EVAL BOARD FOR TLE9273QX
Packaging: Bulk
Function: System Basis Chip (SBC)
Type: Interface
Contents: Board(s)
Utilized IC / Part: TLE9273QX
Secondary Attributes: On-Board LEDs
Embedded: No
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IR2301PBF IR2301PBF Infineon Technologies ir2301.pdf?fileId=5546d462533600a4015355c97bb216dc Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
на замовлення 8357 шт:
термін постачання 21-31 дні (днів)
102+210.77 грн
Мінімальне замовлення: 102
В кошику  од. на суму  грн.
IR2301PBF IR2301PBF Infineon Technologies ir2301.pdf?fileId=5546d462533600a4015355c97bb216dc Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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T2180N16TOFVTXPSA1 T2180N16TOFVTXPSA1 Infineon Technologies Infineon-T2180N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc201240b719a2f47ca Description: SCR MODULE 1.8KV 4460A DO-200AD
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2180 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 4460 A
Voltage - Off State: 1.8 kV
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F3L200R07W2S5FPB56BPSA1 F3L200R07W2S5FPB56BPSA1 Infineon Technologies Description: LOW POWER EASY AG-EASY2B-2
Packaging: Tray
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
1+6553.79 грн
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ISA250300C04LMDSXTMA1 ISA250300C04LMDSXTMA1 Infineon Technologies ISA250300C04LMDSXTMA1.pdf Description: ISA250300C04LMDSXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 7.9A (Tc), 5.8A (Ta), 7.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 20V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V, 30mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
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ISA250300C04LMDSXTMA1 ISA250300C04LMDSXTMA1 Infineon Technologies ISA250300C04LMDSXTMA1.pdf Description: ISA250300C04LMDSXTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 7.9A (Tc), 5.8A (Ta), 7.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 20V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V, 30mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
на замовлення 3854 шт:
термін постачання 21-31 дні (днів)
6+63.91 грн
10+38.52 грн
100+24.99 грн
500+18.00 грн
1000+16.24 грн
2000+14.76 грн
Мінімальне замовлення: 6
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TPM9673FW2624RPIEBTOBO1 Infineon Technologies Description: TPM9673FW2624RPIEBTOBO1
Packaging: Box
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XMC1302Q040X0016ABXTMA1 XMC1302Q040X0016ABXTMA1 Infineon Technologies Infineon-xmc1300_AB-DataSheet-v02_01-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6 Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 34
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IRFU7746PBF IRFU7746PBF Infineon Technologies irfr7746pbf.pdf?fileId=5546d462533600a401535635cbd72125 Description: MOSFET N-CH 75V 56A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 35A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3107 pF @ 25 V
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AUIRF1324STRL AUIRF1324STRL Infineon Technologies auirf1324s.pdf?fileId=5546d462533600a4015355a8b241136c Description: MOSFET N-CH 24V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 195A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
Qualification: AEC-Q101
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BGAP3D30HE6327XUMA1 BGAP3D30HE6327XUMA1 Infineon Technologies Infineon-BGAP3D30H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b3b54a6e222a Description: RF AMP CELL 3.1-4.2GHZ 24VFQN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.1GHz ~ 4.2GHz
RF Type: 4G/5G, Cellular
Voltage - Supply: 4.75V ~ 5.25V
Gain: 40.1dB
Current - Supply: 315mA
Noise Figure: 3.3dB
P1dB: 31.4dBm
Supplier Device Package: PG-VQFN-24-20
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BGAP3D30HE6327XUMA1 BGAP3D30HE6327XUMA1 Infineon Technologies Infineon-BGAP3D30H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b3b54a6e222a Description: RF AMP CELL 3.1-4.2GHZ 24VFQN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.1GHz ~ 4.2GHz
RF Type: 4G/5G, Cellular
Voltage - Supply: 4.75V ~ 5.25V
Gain: 40.1dB
Current - Supply: 315mA
Noise Figure: 3.3dB
P1dB: 31.4dBm
Supplier Device Package: PG-VQFN-24-20
на замовлення 5982 шт:
термін постачання 21-31 дні (днів)
1+361.06 грн
10+301.33 грн
25+284.99 грн
100+246.40 грн
250+233.78 грн
500+224.87 грн
1000+212.93 грн
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TLE92623BQXXUMA2 TLE92623BQXXUMA2 Infineon Technologies Infineon-TLE9262-3BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc801609785aa013951 Description: OPTIREG SYST BASIS CHIPS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
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IR4427PBF IR4427PBF Infineon Technologies ir4426.pdf?fileId=5546d462533600a4015355d60b491822 description Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
2+198.37 грн
Мінімальне замовлення: 2
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IPA80R1K4CEXKSA1 IPA80R1K4CEXKSA1 Infineon Technologies Infineon-IPA80R1K4CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c788709b1e43 Description: MOSFET N-CH 800V 2.8A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
на замовлення 134 шт:
термін постачання 21-31 дні (днів)
134+47.25 грн
Мінімальне замовлення: 134
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IPLK80R1K4P7ATMA1 IPLK80R1K4P7ATMA1 Infineon Technologies Infineon-IPLK80R1K4P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e10fd50223 Description: MOSFET 800V TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
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IPLK80R1K4P7ATMA1 IPLK80R1K4P7ATMA1 Infineon Technologies Infineon-IPLK80R1K4P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e10fd50223 Description: MOSFET 800V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
товару немає в наявності
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S25FL256SAGNFE003 S25FL256SAGNFE003 Infineon Technologies Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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S25FL256SAGNFE000 S25FL256SAGNFE000 Infineon Technologies Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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S26KS128SDPBHA020 S26KS128SDPBHA020 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 128MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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AIKQB120N75CP2AKSA1 AIKQB120N75CP2AKSA1 Infineon Technologies Infineon-AIKQB120N75CP2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190b6c40b7773f2 Description: DISCRETE SWITCHES
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 120A
Supplier Device Package: PG-TO247-3-51
Td (on/off) @ 25°C: 71ns/244ns
Switching Energy: 6.82mJ (on), 3.8mJ (off)
Test Condition: 470V, 120A, 5Ohm, 15V
Gate Charge: 731 nC
Grade: Automotive
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 577 W
Qualification: AEC-Q101
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CY7C68013A-56BAXC CY7C68013A-56BAXC Infineon Technologies download Description: IC MCU USB PERIPH HI SPD 56VFBGA
Packaging: Tray
Package / Case: 56-VFBGA
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 56-VFBGA (5x5)
Number of I/O: 24
DigiKey Programmable: Not Verified
на замовлення 777 шт:
термін постачання 21-31 дні (днів)
1+1221.78 грн
10+933.87 грн
25+873.32 грн
100+757.14 грн
490+709.91 грн
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GAMECONTROLLERTOBO1 GAMECONTROLLERTOBO1 Infineon Technologies Infineon-XENSIV_Game_Controller_User_Manual-UserManual-v01_10-EN.pdf?fileId=8ac78c8c90530b3a0190dee4521070ee&da=t Description: GAMECONTROLLERTOBO1
Packaging: Box
Configuration: Controller
Contents: Battery Charger
Utilized IC / Part: PSoC™6 Bluetooth® LE
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+12784.71 грн
В кошику  од. на суму  грн.
CY8C6247BTID54TXUMA1 Infineon Technologies Description: IOT-PSOC6
Packaging: Tape & Reel (TR)
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CY8C6247BTID54XQLA1 Infineon Technologies Description: IOT-PSOC6
Packaging: Tray
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CYAT61659-56LWS41T CYAT61659-56LWS41T Infineon Technologies CYAT6165x.pdf Description: TrueTouch
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 56-QFN (8x8)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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TLS850D0TAV33ATMA1 TLS850D0TAV33ATMA1 Infineon Technologies Infineon-TLS850D0TA-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969edb50c4266 Description: IC REG LINEAR 3.3V PG-TO263-7-1
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-7-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Delay, Enable, Reset
Grade: Automotive
PSRR: 63dB (100Hz)
Voltage Dropout (Max): 0.43V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 82 µA
Qualification: AEC-Q100
на замовлення 16809 шт:
термін постачання 21-31 дні (днів)
265+80.45 грн
Мінімальне замовлення: 265
В кошику  од. на суму  грн.
S6T3J300411A176A2 Infineon Technologies Infineon-AN214051_Getting_Started_with_the_Traveo_Family_S6J3400_Series-ApplicationNotes-v04_00-EN.pdf?fileId=8ac78c8c7cdc391c017d0d2c83ad6408&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integratio Description: TOOL KIT
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
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FD600R17KE3B2NOSA1 FD600R17KE3B2NOSA1 Infineon Technologies Infineon-FD600R17KE3_B2-DS-v02_02-en_de.pdf?fileId=db3a304412b407950112b43101dd5308 Description: IGBT MODULE 1700V 4300W MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4300 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
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IAUC120N06S5N011ATMA1 IAUC120N06S5N011ATMA1 Infineon Technologies Infineon-IAUC120N06S5N011-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7fb5929e017fc1a9d3fd122c Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tj)
Rds On (Max) @ Id, Vgs: 1.12mOhm @ 60A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9822 pF @ 30 V
Qualification: AEC-Q101
на замовлення 4872 шт:
термін постачання 21-31 дні (днів)
2+258.13 грн
10+162.65 грн
100+113.63 грн
500+93.27 грн
Мінімальне замовлення: 2
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IDH02G65C5XKSA2 IDH02G65C5XKSA2 Infineon Technologies Infineon-IDH02G65C5-DS-v02_02-en.pdf?fileId=db3a304339dcf4b1013a030ab96758eb Description: DIODE SIL CARB 650V 2A PGTO220
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
на замовлення 2125 шт:
термін постачання 21-31 дні (днів)
468+46.52 грн
Мінімальне замовлення: 468
В кошику  од. на суму  грн.
BC 847BF E6327 BC 847BF E6327 Infineon Technologies bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Description: TRANS NPN 45V 0.1A PG-TSFP-3-1
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-TSFP-3-1
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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BAS 70-02W E6327 BAS 70-02W E6327 Infineon Technologies INFNS30154-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 70V 70MA SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SCD-80
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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BSC159N10LSFGATMA1 BSC159N10LSFGATMA1 Infineon Technologies BSC159N10LSF+Rev2.07.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b499f85d47b36 Description: MOSFET N-CH 100V 9.4A/63A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 15.9mOhm @ 50A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 72µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
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CYT3DLBBCBQ1BZSGS CYT3DLBBCBQ1BZSGS Infineon Technologies Infineon-TRAVEO_T2G_CYT3DL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0ccf72f3fd3 Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 272-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 240MHz
Program Memory Size: 4.06MB (4.06M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 272-BGA (16x16)
Number of I/O: 135
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TLE493DW3B6B0HTSA1 TLE493DW3B6B0HTSA1 Infineon Technologies Infineon-TLE493D-W3B6-Bx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f42a9b8b7b75 Description: POSITION SENS ATV
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1970 шт:
термін постачання 21-31 дні (днів)
3+134.46 грн
5+114.62 грн
10+109.18 грн
25+96.43 грн
50+92.29 грн
100+88.50 грн
500+79.56 грн
1000+76.77 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE493DP3B6A1HTSA1 TLE493DP3B6A1HTSA1 Infineon Technologies Infineon-TLE493D-P3B6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f302ca0476fb Description: POSITION SENS ATV
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: SPI
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2965 шт:
термін постачання 21-31 дні (днів)
3+144.42 грн
5+123.73 грн
10+117.89 грн
25+104.14 грн
50+99.72 грн
100+95.67 грн
500+86.08 грн
1000+83.09 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE493DP3B6A2HTSA1 TLE493DP3B6A2HTSA1 Infineon Technologies Infineon-TLE493D-P3B6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f302ca0476fb Description: POSITION SENS ATV
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: SPI
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2995 шт:
термін постачання 21-31 дні (днів)
3+144.42 грн
5+123.73 грн
10+117.89 грн
25+104.14 грн
50+99.72 грн
100+95.67 грн
500+86.08 грн
1000+83.09 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE493DP3B6A3HTSA1 TLE493DP3B6A3HTSA1 Infineon Technologies Infineon-TLE493D-P3B6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f302ca0476fb Description: POSITION SENS ATV
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: SPI
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2985 шт:
термін постачання 21-31 дні (днів)
3+144.42 грн
5+123.73 грн
10+117.89 грн
25+104.14 грн
50+99.72 грн
100+95.67 грн
500+86.08 грн
1000+83.09 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE493DP3B6A0HTSA1 TLE493DP3B6A0HTSA1 Infineon Technologies Infineon-TLE493D-P3B6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f302ca0476fb Description: POSITION SENS ATV
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: SPI
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2837 шт:
термін постачання 21-31 дні (днів)
3+144.42 грн
5+123.73 грн
10+117.89 грн
25+104.14 грн
50+99.72 грн
100+95.67 грн
500+86.08 грн
1000+83.09 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TZ810N22KOFTIMHPSA1 TZ810N22KOFTIMHPSA1 Infineon Technologies Infineon-TZ810N22KOF-DS-v03_02-EN.pdf?fileId=5546d461464245d30146669314a860eb Description: SCR MODULE 2.2KV 1500A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 819 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2.2 kV
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OPTIGATRUSTMV3S2GOTOBO1 OPTIGATRUSTMV3S2GOTOBO1 Infineon Technologies Description: S2GO SECURITY OPTIGA M
Packaging: Bulk
Function: Security
Type: Interface
Contents: Board(s)
Utilized IC / Part: OPTIGA Trust M
Platform: Shield2Go
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
1+620.85 грн
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FF600R12IP4B60BPSA1 Infineon Technologies Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37000 pF @ 25 V
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FF600R12IP4PB60BPSA1 Infineon Technologies Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37000 pF @ 25 V
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CY5117-1X07I Infineon Technologies Description: INFINEON
Packaging: Bulk
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CY95F563KNPFT-G-UNE2 CY95F563KNPFT-G-UNE2 Infineon Technologies Description: IC MCU 8BIT 12KB 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-TSSOP
Number of I/O: 15
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TDA22560XUMA1 Infineon Technologies Description: POWERSTAGE CE
Packaging: Cut Tape (CT)
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TDA22560XUMA1 Infineon Technologies Description: POWERSTAGE CE
Packaging: Tube
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TDA22594AXUMA1 Infineon Technologies Description: POWERSTAGE CE
Packaging: Cut Tape (CT)
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S29GL01GS11DHB023 Infineon-S29GL01GS_S29GL512S_S29GL256S_S29GL128S_128_Mb_256_Mb_512_Mb_1_Gb_GL-S_MIRRORBIT_TM_Flash_Parallel_3-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5
S29GL01GS11DHB023
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT CFI 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 110 ns
Memory Organization: 128M x 8
Qualification: AEC-Q100
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IS29GL01GS-11DHB01 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
IS29GL01GS-11DHB01
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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CYPD7191-40LDXST Infineon-CYPD7191-40LDXS_EZ-PD_CCG7S_Automotive_single-port_USB_Type-C_with_PD_and_buck-boost_controller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c85ecb34701863803ba481a9e
CYPD7191-40LDXST
Виробник: Infineon Technologies
Description: TYPE-C - AUTO
Packaging: Cut Tape (CT)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4V ~ 24V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB), ROM (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 13
на замовлення 2460 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+421.65 грн
10+310.84 грн
25+287.16 грн
100+245.01 грн
250+233.35 грн
500+226.32 грн
1000+216.92 грн
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CY15B256J-SXAT Infineon-CY15B256J_256_Kbit_(32K_8)_Automotive_Serial_(I2C)_F_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf69af49d8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY15B256J-SXAT
Виробник: Infineon Technologies
Description: IC FRAM 256KBIT I2C 3.4MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 3.4 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: I2C
Access Time: 130 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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CY15B256J-SXET Infineon-CY15B256J-SXE-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee624b26e3a
CY15B256J-SXET
Виробник: Infineon Technologies
Description: IC FRAM 256KBIT I2C 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 3.4 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: I2C
Access Time: 130 ns
Memory Organization: 32K x 8
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CY15B201QN-50SXET Infineon-CY15B201QN-50SXE_CY15B201QN-50SXET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85ecb34701864fd51d263d14
CY15B201QN-50SXET
Виробник: Infineon Technologies
Description: IC FRAM 1MBIT SPI 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 50 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Access Time: 8 ns
Memory Organization: 128K x 8
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CY15B201QN-50SXE Infineon-CY15B201QN-50SXE_CY15B201QN-50SXET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85ecb34701864fd51d263d14
CY15B201QN-50SXE
Виробник: Infineon Technologies
Description: IC FRAM 1MBIT SPI 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 50 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Access Time: 8 ns
Memory Organization: 128K x 8
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IRF7457PBF irf7457pbf.pdf?fileId=5546d462533600a4015355feb4521bf8
IRF7457PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 15A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 10 V
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IRGS4064DPBF IRGS4064DPbF.pdf
IRGS4064DPBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 20A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.91V @ 15V, 10A
Supplier Device Package: D2PAK
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/79ns
Switching Energy: 29µJ (on), 200µJ (off)
Test Condition: 400V, 10A, 22Ohm, 15V
Gate Charge: 32 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 101 W
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IMZC120R022M2HXKSA1 IMZC120R022M2HXKSA1.pdf
IMZC120R022M2HXKSA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 80A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 32A, 18V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 10.1mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 800 V
на замовлення 480 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1095.62 грн
30+649.49 грн
120+575.28 грн
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DCDCSBCBOARDTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLE9273QX
Packaging: Bulk
Function: System Basis Chip (SBC)
Type: Interface
Contents: Board(s)
Utilized IC / Part: TLE9273QX
Secondary Attributes: On-Board LEDs
Embedded: No
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IR2301PBF ir2301.pdf?fileId=5546d462533600a4015355c97bb216dc
IR2301PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
на замовлення 8357 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
102+210.77 грн
Мінімальне замовлення: 102
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IR2301PBF ir2301.pdf?fileId=5546d462533600a4015355c97bb216dc
IR2301PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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T2180N16TOFVTXPSA1 Infineon-T2180N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc201240b719a2f47ca
T2180N16TOFVTXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 4460A DO-200AD
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2180 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 4460 A
Voltage - Off State: 1.8 kV
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F3L200R07W2S5FPB56BPSA1
F3L200R07W2S5FPB56BPSA1
Виробник: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-2
Packaging: Tray
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6553.79 грн
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ISA250300C04LMDSXTMA1 ISA250300C04LMDSXTMA1.pdf
ISA250300C04LMDSXTMA1
Виробник: Infineon Technologies
Description: ISA250300C04LMDSXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 7.9A (Tc), 5.8A (Ta), 7.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 20V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V, 30mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
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ISA250300C04LMDSXTMA1 ISA250300C04LMDSXTMA1.pdf
ISA250300C04LMDSXTMA1
Виробник: Infineon Technologies
Description: ISA250300C04LMDSXTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 7.9A (Tc), 5.8A (Ta), 7.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 20V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V, 30mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
на замовлення 3854 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+63.91 грн
10+38.52 грн
100+24.99 грн
500+18.00 грн
1000+16.24 грн
2000+14.76 грн
Мінімальне замовлення: 6
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TPM9673FW2624RPIEBTOBO1
Виробник: Infineon Technologies
Description: TPM9673FW2624RPIEBTOBO1
Packaging: Box
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XMC1302Q040X0016ABXTMA1 Infineon-xmc1300_AB-DataSheet-v02_01-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6
XMC1302Q040X0016ABXTMA1
Виробник: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 34
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IRFU7746PBF irfr7746pbf.pdf?fileId=5546d462533600a401535635cbd72125
IRFU7746PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 56A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 35A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3107 pF @ 25 V
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AUIRF1324STRL auirf1324s.pdf?fileId=5546d462533600a4015355a8b241136c
AUIRF1324STRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 24V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 195A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
Qualification: AEC-Q101
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BGAP3D30HE6327XUMA1 Infineon-BGAP3D30H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b3b54a6e222a
BGAP3D30HE6327XUMA1
Виробник: Infineon Technologies
Description: RF AMP CELL 3.1-4.2GHZ 24VFQN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.1GHz ~ 4.2GHz
RF Type: 4G/5G, Cellular
Voltage - Supply: 4.75V ~ 5.25V
Gain: 40.1dB
Current - Supply: 315mA
Noise Figure: 3.3dB
P1dB: 31.4dBm
Supplier Device Package: PG-VQFN-24-20
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BGAP3D30HE6327XUMA1 Infineon-BGAP3D30H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b3b54a6e222a
BGAP3D30HE6327XUMA1
Виробник: Infineon Technologies
Description: RF AMP CELL 3.1-4.2GHZ 24VFQN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.1GHz ~ 4.2GHz
RF Type: 4G/5G, Cellular
Voltage - Supply: 4.75V ~ 5.25V
Gain: 40.1dB
Current - Supply: 315mA
Noise Figure: 3.3dB
P1dB: 31.4dBm
Supplier Device Package: PG-VQFN-24-20
на замовлення 5982 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+361.06 грн
10+301.33 грн
25+284.99 грн
100+246.40 грн
250+233.78 грн
500+224.87 грн
1000+212.93 грн
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TLE92623BQXXUMA2 Infineon-TLE9262-3BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc801609785aa013951
TLE92623BQXXUMA2
Виробник: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
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IR4427PBF description ir4426.pdf?fileId=5546d462533600a4015355d60b491822
IR4427PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+198.37 грн
Мінімальне замовлення: 2
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IPA80R1K4CEXKSA1 Infineon-IPA80R1K4CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c788709b1e43
IPA80R1K4CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 2.8A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
на замовлення 134 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
134+47.25 грн
Мінімальне замовлення: 134
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IPLK80R1K4P7ATMA1 Infineon-IPLK80R1K4P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e10fd50223
IPLK80R1K4P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET 800V TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
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IPLK80R1K4P7ATMA1 Infineon-IPLK80R1K4P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e10fd50223
IPLK80R1K4P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET 800V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
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S25FL256SAGNFE003
S25FL256SAGNFE003
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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S25FL256SAGNFE000 Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL256SAGNFE000
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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S26KS128SDPBHA020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S26KS128SDPBHA020
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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AIKQB120N75CP2AKSA1 Infineon-AIKQB120N75CP2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190b6c40b7773f2
AIKQB120N75CP2AKSA1
Виробник: Infineon Technologies
Description: DISCRETE SWITCHES
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 120A
Supplier Device Package: PG-TO247-3-51
Td (on/off) @ 25°C: 71ns/244ns
Switching Energy: 6.82mJ (on), 3.8mJ (off)
Test Condition: 470V, 120A, 5Ohm, 15V
Gate Charge: 731 nC
Grade: Automotive
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 577 W
Qualification: AEC-Q101
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CY7C68013A-56BAXC download
CY7C68013A-56BAXC
Виробник: Infineon Technologies
Description: IC MCU USB PERIPH HI SPD 56VFBGA
Packaging: Tray
Package / Case: 56-VFBGA
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 56-VFBGA (5x5)
Number of I/O: 24
DigiKey Programmable: Not Verified
на замовлення 777 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1221.78 грн
10+933.87 грн
25+873.32 грн
100+757.14 грн
490+709.91 грн
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GAMECONTROLLERTOBO1 Infineon-XENSIV_Game_Controller_User_Manual-UserManual-v01_10-EN.pdf?fileId=8ac78c8c90530b3a0190dee4521070ee&da=t
GAMECONTROLLERTOBO1
Виробник: Infineon Technologies
Description: GAMECONTROLLERTOBO1
Packaging: Box
Configuration: Controller
Contents: Battery Charger
Utilized IC / Part: PSoC™6 Bluetooth® LE
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+12784.71 грн
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CY8C6247BTID54TXUMA1
Виробник: Infineon Technologies
Description: IOT-PSOC6
Packaging: Tape & Reel (TR)
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CY8C6247BTID54XQLA1
Виробник: Infineon Technologies
Description: IOT-PSOC6
Packaging: Tray
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CYAT61659-56LWS41T CYAT6165x.pdf
CYAT61659-56LWS41T
Виробник: Infineon Technologies
Description: TrueTouch
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 56-QFN (8x8)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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TLS850D0TAV33ATMA1 Infineon-TLS850D0TA-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969edb50c4266
TLS850D0TAV33ATMA1
Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V PG-TO263-7-1
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-7-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Delay, Enable, Reset
Grade: Automotive
PSRR: 63dB (100Hz)
Voltage Dropout (Max): 0.43V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 82 µA
Qualification: AEC-Q100
на замовлення 16809 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
265+80.45 грн
Мінімальне замовлення: 265
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S6T3J300411A176A2 Infineon-AN214051_Getting_Started_with_the_Traveo_Family_S6J3400_Series-ApplicationNotes-v04_00-EN.pdf?fileId=8ac78c8c7cdc391c017d0d2c83ad6408&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integratio
Виробник: Infineon Technologies
Description: TOOL KIT
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
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FD600R17KE3B2NOSA1 Infineon-FD600R17KE3_B2-DS-v02_02-en_de.pdf?fileId=db3a304412b407950112b43101dd5308
FD600R17KE3B2NOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 4300W MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4300 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
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IAUC120N06S5N011ATMA1 Infineon-IAUC120N06S5N011-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7fb5929e017fc1a9d3fd122c
IAUC120N06S5N011ATMA1
Виробник: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tj)
Rds On (Max) @ Id, Vgs: 1.12mOhm @ 60A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9822 pF @ 30 V
Qualification: AEC-Q101
на замовлення 4872 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+258.13 грн
10+162.65 грн
100+113.63 грн
500+93.27 грн
Мінімальне замовлення: 2
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IDH02G65C5XKSA2 Infineon-IDH02G65C5-DS-v02_02-en.pdf?fileId=db3a304339dcf4b1013a030ab96758eb
IDH02G65C5XKSA2
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 2A PGTO220
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
на замовлення 2125 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
468+46.52 грн
Мінімальне замовлення: 468
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BC 847BF E6327 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
BC 847BF E6327
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.1A PG-TSFP-3-1
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-TSFP-3-1
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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BAS 70-02W E6327 INFNS30154-1.pdf?t.download=true&u=5oefqw
BAS 70-02W E6327
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 70V 70MA SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SCD-80
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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BSC159N10LSFGATMA1 BSC159N10LSF+Rev2.07.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b499f85d47b36
BSC159N10LSFGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 9.4A/63A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 15.9mOhm @ 50A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 72µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
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CYT3DLBBCBQ1BZSGS Infineon-TRAVEO_T2G_CYT3DL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0ccf72f3fd3
CYT3DLBBCBQ1BZSGS
Виробник: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 272-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 240MHz
Program Memory Size: 4.06MB (4.06M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 272-BGA (16x16)
Number of I/O: 135
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TLE493DW3B6B0HTSA1 Infineon-TLE493D-W3B6-Bx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f42a9b8b7b75
TLE493DW3B6B0HTSA1
Виробник: Infineon Technologies
Description: POSITION SENS ATV
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1970 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+134.46 грн
5+114.62 грн
10+109.18 грн
25+96.43 грн
50+92.29 грн
100+88.50 грн
500+79.56 грн
1000+76.77 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE493DP3B6A1HTSA1 Infineon-TLE493D-P3B6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f302ca0476fb
TLE493DP3B6A1HTSA1
Виробник: Infineon Technologies
Description: POSITION SENS ATV
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: SPI
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2965 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+144.42 грн
5+123.73 грн
10+117.89 грн
25+104.14 грн
50+99.72 грн
100+95.67 грн
500+86.08 грн
1000+83.09 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE493DP3B6A2HTSA1 Infineon-TLE493D-P3B6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f302ca0476fb
TLE493DP3B6A2HTSA1
Виробник: Infineon Technologies
Description: POSITION SENS ATV
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: SPI
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2995 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+144.42 грн
5+123.73 грн
10+117.89 грн
25+104.14 грн
50+99.72 грн
100+95.67 грн
500+86.08 грн
1000+83.09 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE493DP3B6A3HTSA1 Infineon-TLE493D-P3B6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f302ca0476fb
TLE493DP3B6A3HTSA1
Виробник: Infineon Technologies
Description: POSITION SENS ATV
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: SPI
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2985 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+144.42 грн
5+123.73 грн
10+117.89 грн
25+104.14 грн
50+99.72 грн
100+95.67 грн
500+86.08 грн
1000+83.09 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE493DP3B6A0HTSA1 Infineon-TLE493D-P3B6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f302ca0476fb
TLE493DP3B6A0HTSA1
Виробник: Infineon Technologies
Description: POSITION SENS ATV
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: SPI
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2837 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+144.42 грн
5+123.73 грн
10+117.89 грн
25+104.14 грн
50+99.72 грн
100+95.67 грн
500+86.08 грн
1000+83.09 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TZ810N22KOFTIMHPSA1 Infineon-TZ810N22KOF-DS-v03_02-EN.pdf?fileId=5546d461464245d30146669314a860eb
TZ810N22KOFTIMHPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 2.2KV 1500A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 819 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2.2 kV
товару немає в наявності
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OPTIGATRUSTMV3S2GOTOBO1
OPTIGATRUSTMV3S2GOTOBO1
Виробник: Infineon Technologies
Description: S2GO SECURITY OPTIGA M
Packaging: Bulk
Function: Security
Type: Interface
Contents: Board(s)
Utilized IC / Part: OPTIGA Trust M
Platform: Shield2Go
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+620.85 грн
В кошику  од. на суму  грн.
FF600R12IP4B60BPSA1
Виробник: Infineon Technologies
Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37000 pF @ 25 V
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FF600R12IP4PB60BPSA1
Виробник: Infineon Technologies
Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37000 pF @ 25 V
товару немає в наявності
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CY5117-1X07I
Виробник: Infineon Technologies
Description: INFINEON
Packaging: Bulk
товару немає в наявності
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CY95F563KNPFT-G-UNE2
CY95F563KNPFT-G-UNE2
Виробник: Infineon Technologies
Description: IC MCU 8BIT 12KB 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-TSSOP
Number of I/O: 15
товару немає в наявності
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TDA22560XUMA1
Виробник: Infineon Technologies
Description: POWERSTAGE CE
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
TDA22560XUMA1
Виробник: Infineon Technologies
Description: POWERSTAGE CE
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
TDA22594AXUMA1
Виробник: Infineon Technologies
Description: POWERSTAGE CE
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
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