Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148774) > Сторінка 764 з 2480
| Фото | Назва | Виробник | Інформація |
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IAUZN04S7L046ATMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V)Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tj) Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 10µA Supplier Device Package: PG-TSDSON-8-44 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 9090 шт: термін постачання 21-31 дні (днів) |
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ICE5AR4770BZS1XKLA1 | Infineon Technologies |
Description: ICE5AR4770BZS1XKLA1Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 75% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 700V Output Isolation: Either Topology: Buck, Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 32V Supplier Device Package: PG-DIP-7-10 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 16 V Power (Watts): 26.5 W |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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ICE5BR4780BZ1XKLA1 | Infineon Technologies |
Description: ICE5BR4780BZ1XKLA1Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 75% Frequency - Switching: 65kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Either Topology: Buck, Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 32V Supplier Device Package: PG-DIP-7-10 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 16 V Power (Watts): 27.5 W |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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ICE5BR3995BZ1XKLA1 | Infineon Technologies |
Description: ICE5BR3995BZ1XKLA1Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 75% Frequency - Switching: 65kHz Internal Switch(s): Yes Voltage - Breakdown: 950V Output Isolation: Either Topology: Buck, Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 32V Supplier Device Package: PG-DIP-7-10 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 16 V Power (Watts): 30 W |
на замовлення 1996 шт: термін постачання 21-31 дні (днів) |
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ICE5AR3995BZ1XKLA1 | Infineon Technologies |
Description: ICE5AR3995BZ1XKLA1Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 75% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 950V Output Isolation: Either Topology: Buck, Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 32V Supplier Device Package: PG-DIP-7-10 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 16 V Power (Watts): 30 W |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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ICE5BR2280BZ1XKLA1 | Infineon Technologies |
Description: ICE5BR2280BZ1XKLA1Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 75% Frequency - Switching: 65kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Either Topology: Buck, Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 32V Supplier Device Package: PG-DIP-7-10 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 16 V Power (Watts): 40 W |
на замовлення 1988 шт: термін постачання 21-31 дні (днів) |
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IAUCN08S7N024ATMA1 | Infineon Technologies |
Description: MOSFET_(75V 120V(Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 165A Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUCN08S7N024ATMA1 | Infineon Technologies |
Description: MOSFET_(75V 120V(Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 165A Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Qualification: AEC-Q101 |
на замовлення 5384 шт: термін постачання 21-31 дні (днів) |
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ICE5AR0680BZS1XKLA1 | Infineon Technologies |
Description: ICE5AR0680BZS1XKLA1Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 75% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Either Topology: Buck, Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 32V Supplier Device Package: PG-DIP-7-10 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 16 V Power (Watts): 66 W |
на замовлення 1990 шт: термін постачання 21-31 дні (днів) |
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TLE4803S16S0000XUMA2 | Infineon Technologies |
Description: POSITION SENS ATVPackaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: Analog Voltage Operating Temperature: -40°C ~ 150°C Termination Style: SMD (SMT) Tab Voltage - Supply: 4.4V ~ 6V Actuator Type: External Magnet, Not Included Technology: Inductive For Measuring: Angle, Linear Supplier Device Package: PG-TSSOP-16 Rotation Angle - Electrical, Mechanical: 0° ~ 360° Output Signal: Digital Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE4803S16S0000XUMA2 | Infineon Technologies |
Description: POSITION SENS ATVPackaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: Analog Voltage Operating Temperature: -40°C ~ 150°C Termination Style: SMD (SMT) Tab Voltage - Supply: 4.4V ~ 6V Actuator Type: External Magnet, Not Included Technology: Inductive For Measuring: Angle, Linear Supplier Device Package: PG-TSSOP-16 Rotation Angle - Electrical, Mechanical: 0° ~ 360° Output Signal: Digital Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE4801C16S0000XUMA2 | Infineon Technologies |
Description: POSITION SENS ATVPackaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: Analog Voltage Operating Temperature: -40°C ~ 150°C Termination Style: SMD (SMT) Tab Voltage - Supply: 4.4V ~ 6V Actuator Type: External Magnet, Not Included Technology: Inductive For Measuring: Angle Supplier Device Package: PG-TSSOP-16 Rotation Angle - Electrical, Mechanical: 0° ~ 360° Output Signal: Digital Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE4801C16S0000XUMA2 | Infineon Technologies |
Description: POSITION SENS ATVPackaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: Analog Voltage Operating Temperature: -40°C ~ 150°C Termination Style: SMD (SMT) Tab Voltage - Supply: 4.4V ~ 6V Actuator Type: External Magnet, Not Included Technology: Inductive For Measuring: Angle Supplier Device Package: PG-TSSOP-16 Rotation Angle - Electrical, Mechanical: 0° ~ 360° Output Signal: Digital Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE4801S16S0000XUMA2 | Infineon Technologies |
Description: POSITION SENS ATVPackaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: Analog Voltage Operating Temperature: -40°C ~ 150°C Termination Style: SMD (SMT) Tab Voltage - Supply: 4.4V ~ 6V Actuator Type: External Magnet, Not Included Technology: Inductive For Measuring: Angle Supplier Device Package: PG-TSSOP-16 Rotation Angle - Electrical, Mechanical: 0° ~ 360° Output Signal: Digital Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE4801S16S0000XUMA2 | Infineon Technologies |
Description: POSITION SENS ATVPackaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: Analog Voltage Operating Temperature: -40°C ~ 150°C Termination Style: SMD (SMT) Tab Voltage - Supply: 4.4V ~ 6V Actuator Type: External Magnet, Not Included Technology: Inductive For Measuring: Angle Supplier Device Package: PG-TSSOP-16 Rotation Angle - Electrical, Mechanical: 0° ~ 360° Output Signal: Digital Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPZA60R099CM8XKSA1 | Infineon Technologies |
Description: IPZA60R099CM8XKSA1Packaging: Tape & Reel (TR) Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 10.1A, 10V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 260µA Supplier Device Package: PG-TO247-4-U02 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V |
на замовлення 230 шт: термін постачання 21-31 дні (днів) |
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IPZA60R099CM8XKSA1 | Infineon Technologies |
Description: IPZA60R099CM8XKSA1Packaging: Cut Tape (CT) Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 10.1A, 10V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 260µA Supplier Device Package: PG-TO247-4-U02 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V |
на замовлення 230 шт: термін постачання 21-31 дні (днів) |
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IMZA65R020M2HXKSA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFETPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 83A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V Power Dissipation (Max): 273W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 9.5mA Supplier Device Package: PG-TO247-4-8 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V |
на замовлення 374 шт: термін постачання 21-31 дні (днів) |
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IMLT65R075M2HXTMA1 | Infineon Technologies |
Description: IMLT65R075M2HXTMA1Packaging: Tube Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34.7A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 11.9A, 20V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 2.4mA Supplier Device Package: PG-HDSOP-16-6 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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EVALTLE9180D31QKTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLE9180D-31QKPackaging: Box Function: Gate Driver Type: Power Management Contents: Board(s) Utilized IC / Part: TLE9180D-31QK Secondary Attributes: SPI Interface(s) |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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XC2768X136F128LRAAKXUMA1 | Infineon Technologies |
Description: IC MCU 16/32BIT 1.06MB 100LQFPPackaging: Tape & Reel (TR) Package / Case: 100-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 128MHz Program Memory Size: 1.06MB (1.06M x 8) RAM Size: 90K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 16x12b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, FlexRay, I2C, LINbus, SPI, UART/USART Peripherals: I2S, POR, PWM, WDT Supplier Device Package: PG-LQFP-100-8 Number of I/O: 75 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRL3713STRLPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 260A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 38A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPS65R950C6AKMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 4.5A TO251-3Packaging: Bulk Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 200µA Supplier Device Package: PG-TO251-3-11 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V |
на замовлення 488448 шт: термін постачання 21-31 дні (днів) |
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KP253HPXTMA1 | Infineon Technologies |
Description: SENSOR BAROMETRIC DSOF8Packaging: Tape & Reel (TR) Package / Case: 8-SMD Module Mounting Type: Surface Mount Applications: Board Mount Supplier Device Package: PG-DSOF-8-16 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CYPAS2174A132LQXQTXUMA1 | Infineon Technologies |
Description: CHARGER_ADAPTERPackaging: Tape & Reel (TR) Package / Case: 32-WFQFN Exposed Pad Mounting Type: Surface Mount Number of Outputs: 1 Voltage - Input: 34V Operating Temperature: -40°C ~ 150°C (TJ) Applications: Controller, USB Supplier Device Package: 32-QFN (5x5) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CYPAS2174A132LQXQXQLA1 | Infineon Technologies |
Description: CHARGER_ADAPTERPackaging: Tray Package / Case: 32-WFQFN Exposed Pad Mounting Type: Surface Mount Number of Outputs: 1 Voltage - Input: 34V Operating Temperature: -40°C ~ 150°C (TJ) Applications: Controller, USB Supplier Device Package: 32-QFN (5x5) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S26HS01GTGABHB020 | Infineon Technologies |
Description: IC FLASH 1GBIT HYPERBUS 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (8x8) Write Cycle Time - Word, Page: 1.7ms Memory Interface: HyperBus Access Time: 5.45 ns Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
на замовлення 420 шт: термін постачання 21-31 дні (днів) |
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IKWH75N75EH7XKSA1 | Infineon Technologies |
Description: INDUSTRY 14Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IKZA75N75EH7XKSA1 | Infineon Technologies |
Description: INDUSTRY 14Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 84 ns Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 75A Supplier Device Package: PG-TO247-4-U02 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 24ns/183ns Switching Energy: 1.1mJ (on), 900µJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 155 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 750 V Current - Collector Pulsed (Icm): 300 A Power - Max: 341 W |
на замовлення 240 шт: термін постачання 21-31 дні (днів) |
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IR2135STRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 28SOICPackaging: Tape & Reel (TR) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: 125°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 28-SOIC Rise / Fall Time (Typ): 90ns, 40ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 250mA, 500mA DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1EDL8011XUMA1 | Infineon Technologies |
Description: IC MOTOR DRIVER 8V-125V 8-SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 8V ~ 125V Input Type: Non-Inverting Supplier Device Package: PG-DSO-8-92 Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1V, 1.15V Current - Peak Output (Source, Sink): -, 1A |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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1EDL8011XUMA1 | Infineon Technologies |
Description: IC MOTOR DRIVER 8V-125V 8-SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 8V ~ 125V Input Type: Non-Inverting Supplier Device Package: PG-DSO-8-92 Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1V, 1.15V Current - Peak Output (Source, Sink): -, 1A |
на замовлення 7154 шт: термін постачання 21-31 дні (днів) |
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CY62147GN30-45BVXI | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 48VFBGAPackaging: Tray Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-VFBGA (6x8) Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AUIRL3705N | Infineon Technologies |
Description: AUIRL3705 - 55V-60V N-CHANNEL AUPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220AB Grade: Automotive Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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CY8C6246BZI-D04T | Infineon Technologies |
Description: IC MCU 32BIT 512KB FLSH 124FBGAPackaging: Tape & Reel (TR) Package / Case: 124-VFBGA Mounting Type: Surface Mount Speed: 100MHz, 150MHz Program Memory Size: 512KB (512K x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 32K x 8 Core Processor: ARM® Cortex®-M0, ARM® Cortex®-M4 Data Converters: A/D 16x10/12b SAR; D/A 2x7b, 1x12b Sigma-Delta Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, QSPI, SmartCard, SPI, SSP, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT Supplier Device Package: 124-VFBGA (9x9) Number of I/O: 100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C6117BZI-F34T | Infineon Technologies |
Description: IC MCU 32BIT 1MB FLASH 124VFBGAPackaging: Tape & Reel (TR) Package / Case: 124-VFBGA Mounting Type: Surface Mount Speed: 50MHz Program Memory Size: 1MB (1M x 8) RAM Size: 288K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 32K x 8 Core Processor: ARM® Cortex®-M4 Data Converters: A/D 16x12b SAR; D/A 2x7b, 1x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, Capsense, DMA, I2S, POR, PWM, WDT Supplier Device Package: 124-VFBGA (9x9) Number of I/O: 100 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C6137BZI-F34T | Infineon Technologies |
Description: IC MCU 32BIT 1MB FLASH 124VFBGAPackaging: Tape & Reel (TR) Package / Case: 124-VFBGA Mounting Type: Surface Mount Speed: 150MHz Program Memory Size: 1MB (1M x 8) RAM Size: 288K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 32K x 8 Core Processor: ARM® Cortex®-M4F Data Converters: A/D 16x10/12b SAR; D/A 2x7b, 1x12b Sigma-Delta Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, QSPI, SmartCard, SPI, SSP, UART/USART, USB Peripherals: Brown-out Detect/Reset, Capsense, DMA, I2S, POR, PWM, WDT Supplier Device Package: 124-VFBGA (9x9) Number of I/O: 100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C6137BZI-F54T | Infineon Technologies |
Description: IC MCU 32BIT 1MB FLASH 124VFBGAPackaging: Tape & Reel (TR) Package / Case: 124-VFBGA Mounting Type: Surface Mount Speed: 150MHz Program Memory Size: 1MB (1M x 8) RAM Size: 288K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 32K x 8 Core Processor: ARM® Cortex®-M4F Data Converters: A/D 16x10/12b SAR; D/A 2x7b, 1x12b Sigma-Delta Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, QSPI, SmartCard, SPI, SSP, UART/USART, USB Peripherals: Brown-out Detect/Reset, Capsense, Crypto - AES, DMA, I2S, POR, PWM, RSA, SHA, TRNG, WDT Supplier Device Package: 124-VFBGA (9x9) Number of I/O: 100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C6247BZI-D34T | Infineon Technologies |
Description: IC MCU 32BIT 1MB FLASH 124VFBGA Packaging: Tape & Reel (TR) Package / Case: 124-VFBGA Mounting Type: Surface Mount Speed: 100MHz, 150MHz Program Memory Size: 1MB (1M x 8) RAM Size: 288K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 32K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Data Converters: A/D 16x10/12b SAR; D/A 2x7b, 1x12b Sigma-Delta Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, QSPI, SmartCard, SPI, SSP, UART/USART, USB Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT Supplier Device Package: 124-VFBGA (9x9) Number of I/O: 104 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C6247BZI-D54T | Infineon Technologies |
Description: IC MCU 32BIT 1MB FLASH 124VFBGAPackaging: Tape & Reel (TR) Package / Case: 124-VFBGA Mounting Type: Surface Mount Speed: 100MHz, 150MHz Program Memory Size: 1MB (1M x 8) RAM Size: 288K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 32K x 8 Core Processor: ARM® Cortex®-M4/M0 Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b, 1x12b Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, POR, PWM, WDT Supplier Device Package: 124-VFBGA (9x9) Number of I/O: 104 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C614ABZI-S2F04T | Infineon Technologies |
Description: IC MCU 32BIT 2MB FLASH 124VFBGAPackaging: Tape & Reel (TR) Package / Case: 124-VFBGA Mounting Type: Surface Mount Speed: 150MHz Program Memory Size: 2MB (2M x 8) RAM Size: 1M x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, PMC, POR, PWM, Temp Sensor, WDT Supplier Device Package: 124-VFBGA (9x9) Number of I/O: 100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C624ABZI-S2D04T | Infineon Technologies |
Description: IC MCU 32BIT 2MB FLASH 124VFBGAPackaging: Tape & Reel (TR) Package / Case: 124-VFBGA Mounting Type: Surface Mount Speed: 100MHz, 150MHz Program Memory Size: 2MB (2M x 8) RAM Size: 1M x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 32K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Data Converters: A/D 16x10/12b SAR ; D/A 2x7/8b Sigma-Delta Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, SmartCard, SPI, SSP, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT Supplier Device Package: 124-VFBGA (9x9) Number of I/O: 100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C624ABZI-S2D14T | Infineon Technologies |
Description: IC MCU 32BIT 2MB FLASH 124VFBGAPackaging: Tape & Reel (TR) Package / Case: 124-VFBGA Mounting Type: Surface Mount Speed: 100MHz, 150MHz Program Memory Size: 2MB (2M x 8) RAM Size: 1M x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 32K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Data Converters: A/D 16x10/12b SAR ; D/A 2x7/8b Sigma-Delta Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, SmartCard, SPI, SSP, UART/USART, USB Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT Supplier Device Package: 124-VFBGA (9x9) Number of I/O: 100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C614ABZI-S2F44T | Infineon Technologies |
Description: IC MCU 32BIT 2MB FLASH 124VFBGA Packaging: Tape & Reel (TR) Package / Case: 124-VFBGA Mounting Type: Surface Mount Speed: 150MHz Program Memory Size: 2MB (2M x 8) RAM Size: 1M x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 16x10/12b SAR ; D/A 2x7/8b Sigma-Delta Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, LCD, LVD, PMC, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT Supplier Device Package: 124-VFBGA (9x9) Number of I/O: 100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C614ABZI-S2F44 | Infineon Technologies |
Description: IC MCU 32BIT 2MB FLASH 124VFBGAPackaging: Tray Package / Case: 124-VFBGA Mounting Type: Surface Mount Speed: 100MHz, 150MHz Program Memory Size: 2MB (2M x 8) RAM Size: 1M x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Data Converters: A/D 16x8b, 16x10/12b SAR, Sigma-Delta; D/A 2x7/8b Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: eMMC/SD/SDIO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT Supplier Device Package: 124-VFBGA (9x9) Number of I/O: 100 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPAN80R280P7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 17A TO220Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 360µA Supplier Device Package: PG-TO220-3-FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V |
на замовлення 16881 шт: термін постачання 21-31 дні (днів) |
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CYW43012C0WKWBGT | Infineon Technologies |
Description: RF TXRX MODULE BLUETOOTH SMDPackaging: Cut Tape (CT) Package / Case: 24-VBGA Mounting Type: Surface Mount Frequency: 2.4GHz, 5GHz Data Rate: 78Mbps Protocol: 802.11a/b/g/n, Bluetooth v5.0 Antenna Type: Antenna Not Included RF Family/Standard: Bluetooth Serial Interfaces: UART |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| FZ1500R33HL3NPSA1 | Infineon Technologies |
Description: FZ1500R33 - INSULATED GATE BIPOLPackaging: Bulk |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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FD300R17KE4HPSA1 | Infineon Technologies |
Description: MEDIUM POWER 62MMPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A NTC Thermistor: No IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 300 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 24.5 nF @ 25 V |
на замовлення 28 шт: термін постачання 21-31 дні (днів) |
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IGT65R055D2ATMA1 | Infineon Technologies |
Description: IGT65R055D2ATMA1Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 106W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-HSOF-8-3 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IGT65R055D2ATMA1 | Infineon Technologies |
Description: IGT65R055D2ATMA1Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 106W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-HSOF-8-3 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V |
на замовлення 485 шт: термін постачання 21-31 дні (днів) |
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IRF630NPBFAKMA1 | Infineon Technologies |
Description: PLANAR 40<-<100VPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V Power Dissipation (Max): 82W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SHIELDBTS70082EPZTOBO1 | Infineon Technologies |
Description: SHIELD_BTS7008-2EPZPackaging: Box Function: Switch Type: Power Management Contents: Board(s) Utilized IC / Part: BTS7008-2EPZ |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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| SHIELDBTS70401EPZTOBO1 | Infineon Technologies |
Description: SHIELD_BTS7040-1EPZPackaging: Box Function: Switch Type: Power Management Contents: Board(s) Utilized IC / Part: BTS7040-1EPZ |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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IPW65R060CM8XKSA1 | Infineon Technologies |
Description: IPW65R060CM8XKSA1Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16.7A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 440µA Supplier Device Package: PG-TO247-3-U06 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2462 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TDB6HK180N16RRPB11BPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 175°C (TJ) Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode Current - Hold (Ih) (Max): 220 mA Current - Gate Trigger (Igt) (Max): 100 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1600A @ 50Hz Number of SCRs, Diodes: 3 SCRs, 3 Diodes Voltage - Gate Trigger (Vgt) (Max): 2 V Voltage - Off State: 1.6 kV |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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| CYW20829B0P4TAI200XUMA1 | Infineon Technologies |
Description: BLE INDUSTRIAL AND IOT Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FS100R12W2T7B11ABPSA2 | Infineon Technologies |
Description: IGBT MODULE 1200V 100APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A NTC Thermistor: Yes IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Cutoff (Max): 8 µA Input Capacitance (Cies) @ Vce: 21700 pF @ 25 V |
на замовлення 29 шт: термін постачання 21-31 дні (днів) |
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IMCQ120R026M2HXTMA1 | Infineon Technologies |
Description: SICFET N-CH 1200V 82A 22PWRBSOPPackaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 25.4mOhm @ 27A, 18V Power Dissipation (Max): 405W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 8.6mA Supplier Device Package: PG-HDSOP-22-3 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IMCQ120R026M2HXTMA1 | Infineon Technologies |
Description: SICFET N-CH 1200V 82A 22PWRBSOPPackaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 25.4mOhm @ 27A, 18V Power Dissipation (Max): 405W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 8.6mA Supplier Device Package: PG-HDSOP-22-3 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 800 V |
на замовлення 448 шт: термін постачання 21-31 дні (днів) |
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| IAUZN04S7L046ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tj)
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 10µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tj)
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 10µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 20 V
Qualification: AEC-Q101
на замовлення 9090 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 84.05 грн |
| 10+ | 50.87 грн |
| 100+ | 33.37 грн |
| 500+ | 24.26 грн |
| 1000+ | 21.99 грн |
| 2000+ | 20.08 грн |
| ICE5AR4770BZS1XKLA1 |
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Виробник: Infineon Technologies
Description: ICE5AR4770BZS1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 26.5 W
Description: ICE5AR4770BZS1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 26.5 W
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 117.50 грн |
| 50+ | 57.81 грн |
| 100+ | 52.22 грн |
| 500+ | 38.94 грн |
| 1000+ | 32.87 грн |
| 2000+ | 31.63 грн |
| ICE5BR4780BZ1XKLA1 |
![]() |
Виробник: Infineon Technologies
Description: ICE5BR4780BZ1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 27.5 W
Description: ICE5BR4780BZ1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 27.5 W
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 122.64 грн |
| 50+ | 60.70 грн |
| 100+ | 54.79 грн |
| 500+ | 40.84 грн |
| 1000+ | 34.53 грн |
| 2000+ | 33.23 грн |
| ICE5BR3995BZ1XKLA1 |
![]() |
Виробник: Infineon Technologies
Description: ICE5BR3995BZ1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 950V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 30 W
Description: ICE5BR3995BZ1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 950V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 30 W
на замовлення 1996 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 156.09 грн |
| 50+ | 78.57 грн |
| 100+ | 70.93 грн |
| 500+ | 52.74 грн |
| 1000+ | 44.56 грн |
| ICE5AR3995BZ1XKLA1 |
![]() |
Виробник: Infineon Technologies
Description: ICE5AR3995BZ1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 950V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 30 W
Description: ICE5AR3995BZ1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 950V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 30 W
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 167.24 грн |
| 50+ | 84.14 грн |
| 100+ | 75.79 грн |
| 500+ | 56.68 грн |
| 1000+ | 47.88 грн |
| 2000+ | 46.05 грн |
| ICE5BR2280BZ1XKLA1 |
![]() |
Виробник: Infineon Technologies
Description: ICE5BR2280BZ1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 40 W
Description: ICE5BR2280BZ1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 40 W
на замовлення 1988 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 173.24 грн |
| 50+ | 86.92 грн |
| 100+ | 78.57 грн |
| 500+ | 58.59 грн |
| 1000+ | 49.55 грн |
| IAUCN08S7N024ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Qualification: AEC-Q101
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 63.47 грн |
| IAUCN08S7N024ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Qualification: AEC-Q101
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Qualification: AEC-Q101
на замовлення 5384 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 211.84 грн |
| 10+ | 132.14 грн |
| 100+ | 94.56 грн |
| 500+ | 71.99 грн |
| ICE5AR0680BZS1XKLA1 |
![]() |
Виробник: Infineon Technologies
Description: ICE5AR0680BZS1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 66 W
Description: ICE5AR0680BZS1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 66 W
на замовлення 1990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 215.27 грн |
| 50+ | 115.43 грн |
| 100+ | 106.38 грн |
| 500+ | 79.65 грн |
| 1000+ | 70.57 грн |
| TLE4803S16S0000XUMA2 |
![]() |
Виробник: Infineon Technologies
Description: POSITION SENS ATV
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle, Linear
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
Description: POSITION SENS ATV
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle, Linear
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| TLE4803S16S0000XUMA2 |
![]() |
Виробник: Infineon Technologies
Description: POSITION SENS ATV
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle, Linear
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
Description: POSITION SENS ATV
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle, Linear
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| TLE4801C16S0000XUMA2 |
![]() |
Виробник: Infineon Technologies
Description: POSITION SENS ATV
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
Description: POSITION SENS ATV
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| TLE4801C16S0000XUMA2 |
![]() |
Виробник: Infineon Technologies
Description: POSITION SENS ATV
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
Description: POSITION SENS ATV
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| TLE4801S16S0000XUMA2 |
![]() |
Виробник: Infineon Technologies
Description: POSITION SENS ATV
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
Description: POSITION SENS ATV
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| TLE4801S16S0000XUMA2 |
![]() |
Виробник: Infineon Technologies
Description: POSITION SENS ATV
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
Description: POSITION SENS ATV
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| IPZA60R099CM8XKSA1 |
![]() |
Виробник: Infineon Technologies
Description: IPZA60R099CM8XKSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 260µA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
Description: IPZA60R099CM8XKSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 260µA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
на замовлення 230 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 208.64 грн |
| 60+ | 182.00 грн |
| 90+ | 172.36 грн |
| 150+ | 151.58 грн |
| 210+ | 145.55 грн |
| IPZA60R099CM8XKSA1 |
![]() |
Виробник: Infineon Technologies
Description: IPZA60R099CM8XKSA1
Packaging: Cut Tape (CT)
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 260µA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
Description: IPZA60R099CM8XKSA1
Packaging: Cut Tape (CT)
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 260µA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
на замовлення 230 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 373.08 грн |
| 10+ | 238.43 грн |
| IMZA65R020M2HXKSA1 |
![]() |
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
на замовлення 374 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1039.47 грн |
| 30+ | 611.84 грн |
| 120+ | 533.15 грн |
| IMLT65R075M2HXTMA1 |
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Виробник: Infineon Technologies
Description: IMLT65R075M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.7A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 11.9A, 20V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.4mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
Description: IMLT65R075M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.7A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 11.9A, 20V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.4mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
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| EVALTLE9180D31QKTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLE9180D-31QK
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLE9180D-31QK
Secondary Attributes: SPI Interface(s)
Description: EVAL BOARD FOR TLE9180D-31QK
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLE9180D-31QK
Secondary Attributes: SPI Interface(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 48244.36 грн |
| XC2768X136F128LRAAKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 16/32BIT 1.06MB 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1.06MB (1.06M x 8)
RAM Size: 90K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x12b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I2C, LINbus, SPI, UART/USART
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
Description: IC MCU 16/32BIT 1.06MB 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1.06MB (1.06M x 8)
RAM Size: 90K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x12b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I2C, LINbus, SPI, UART/USART
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
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| IRL3713STRLPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 260A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 38A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 15 V
Description: MOSFET N-CH 30V 260A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 38A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 15 V
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| IPS65R950C6AKMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 4.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
Description: MOSFET N-CH 650V 4.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
на замовлення 488448 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 568+ | 39.05 грн |
| KP253HPXTMA1 |
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Виробник: Infineon Technologies
Description: SENSOR BAROMETRIC DSOF8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD Module
Mounting Type: Surface Mount
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Description: SENSOR BAROMETRIC DSOF8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD Module
Mounting Type: Surface Mount
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
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| CYPAS2174A132LQXQTXUMA1 |
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Виробник: Infineon Technologies
Description: CHARGER_ADAPTER
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 34V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Controller, USB
Supplier Device Package: 32-QFN (5x5)
Description: CHARGER_ADAPTER
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 34V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Controller, USB
Supplier Device Package: 32-QFN (5x5)
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| CYPAS2174A132LQXQXQLA1 |
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Виробник: Infineon Technologies
Description: CHARGER_ADAPTER
Packaging: Tray
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 34V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Controller, USB
Supplier Device Package: 32-QFN (5x5)
Description: CHARGER_ADAPTER
Packaging: Tray
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 34V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Controller, USB
Supplier Device Package: 32-QFN (5x5)
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| S26HS01GTGABHB020 |
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Виробник: Infineon Technologies
Description: IC FLASH 1GBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
на замовлення 420 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1762.46 грн |
| 10+ | 1572.40 грн |
| 25+ | 1522.73 грн |
| 50+ | 1394.02 грн |
| 100+ | 1359.38 грн |
| 260+ | 1312.42 грн |
| IKZA75N75EH7XKSA1 |
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Виробник: Infineon Technologies
Description: INDUSTRY 14
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 84 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 75A
Supplier Device Package: PG-TO247-4-U02
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/183ns
Switching Energy: 1.1mJ (on), 900µJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 155 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 341 W
Description: INDUSTRY 14
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 84 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 75A
Supplier Device Package: PG-TO247-4-U02
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/183ns
Switching Energy: 1.1mJ (on), 900µJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 155 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 341 W
на замовлення 240 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 554.90 грн |
| 10+ | 362.40 грн |
| 240+ | 240.55 грн |
| IR2135STRPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
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| 1EDL8011XUMA1 |
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Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 8V-125V 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 125V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-92
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1V, 1.15V
Current - Peak Output (Source, Sink): -, 1A
Description: IC MOTOR DRIVER 8V-125V 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 125V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-92
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1V, 1.15V
Current - Peak Output (Source, Sink): -, 1A
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 55.55 грн |
| 5000+ | 52.29 грн |
| 1EDL8011XUMA1 |
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Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 8V-125V 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 125V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-92
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1V, 1.15V
Current - Peak Output (Source, Sink): -, 1A
Description: IC MOTOR DRIVER 8V-125V 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 125V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-92
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1V, 1.15V
Current - Peak Output (Source, Sink): -, 1A
на замовлення 7154 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 111.49 грн |
| 10+ | 78.71 грн |
| 25+ | 71.46 грн |
| 100+ | 59.56 грн |
| 250+ | 55.99 грн |
| 500+ | 53.84 грн |
| 1000+ | 51.21 грн |
| CY62147GN30-45BVXI |
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Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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| AUIRL3705N |
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Виробник: Infineon Technologies
Description: AUIRL3705 - 55V-60V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
Description: AUIRL3705 - 55V-60V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 176+ | 123.07 грн |
| CY8C6246BZI-D04T |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLSH 124FBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M0, ARM® Cortex®-M4
Data Converters: A/D 16x10/12b SAR; D/A 2x7b, 1x12b Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
Description: IC MCU 32BIT 512KB FLSH 124FBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M0, ARM® Cortex®-M4
Data Converters: A/D 16x10/12b SAR; D/A 2x7b, 1x12b Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
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| CY8C6117BZI-F34T |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b SAR; D/A 2x7b, 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Capsense, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b SAR; D/A 2x7b, 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Capsense, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
DigiKey Programmable: Not Verified
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| CY8C6137BZI-F34T |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR; D/A 2x7b, 1x12b Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Capsense, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR; D/A 2x7b, 1x12b Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Capsense, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
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| CY8C6137BZI-F54T |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR; D/A 2x7b, 1x12b Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Capsense, Crypto - AES, DMA, I2S, POR, PWM, RSA, SHA, TRNG, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR; D/A 2x7b, 1x12b Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Capsense, Crypto - AES, DMA, I2S, POR, PWM, RSA, SHA, TRNG, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
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| CY8C6247BZI-D34T |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR; D/A 2x7b, 1x12b Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 104
Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR; D/A 2x7b, 1x12b Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 104
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| CY8C6247BZI-D54T |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4/M0
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b, 1x12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 104
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4/M0
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b, 1x12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 104
DigiKey Programmable: Not Verified
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| CY8C614ABZI-S2F04T |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, PMC, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
Description: IC MCU 32BIT 2MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, PMC, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
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од. на суму грн.
| CY8C624ABZI-S2D04T |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR ; D/A 2x7/8b Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
Description: IC MCU 32BIT 2MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR ; D/A 2x7/8b Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
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| CY8C624ABZI-S2D14T |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR ; D/A 2x7/8b Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
Description: IC MCU 32BIT 2MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR ; D/A 2x7/8b Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
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| CY8C614ABZI-S2F44T |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR ; D/A 2x7/8b Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, LCD, LVD, PMC, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
Description: IC MCU 32BIT 2MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR ; D/A 2x7/8b Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, LCD, LVD, PMC, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
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| CY8C614ABZI-S2F44 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 124VFBGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x8b, 16x10/12b SAR, Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2MB FLASH 124VFBGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x8b, 16x10/12b SAR, Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
DigiKey Programmable: Not Verified
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| IPAN80R280P7XKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO220-3-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
Description: MOSFET N-CH 800V 17A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO220-3-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
на замовлення 16881 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 198+ | 111.11 грн |
| CYW43012C0WKWBGT |
![]() |
Виробник: Infineon Technologies
Description: RF TXRX MODULE BLUETOOTH SMD
Packaging: Cut Tape (CT)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Data Rate: 78Mbps
Protocol: 802.11a/b/g/n, Bluetooth v5.0
Antenna Type: Antenna Not Included
RF Family/Standard: Bluetooth
Serial Interfaces: UART
Description: RF TXRX MODULE BLUETOOTH SMD
Packaging: Cut Tape (CT)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Data Rate: 78Mbps
Protocol: 802.11a/b/g/n, Bluetooth v5.0
Antenna Type: Antenna Not Included
RF Family/Standard: Bluetooth
Serial Interfaces: UART
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 656.10 грн |
| 10+ | 547.81 грн |
| 25+ | 518.79 грн |
| 100+ | 449.46 грн |
| 250+ | 427.07 грн |
| 500+ | 411.26 грн |
| 1000+ | 389.88 грн |
| FZ1500R33HL3NPSA1 |
![]() |
на замовлення 8 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 114069.63 грн |
| FD300R17KE4HPSA1 |
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Виробник: Infineon Technologies
Description: MEDIUM POWER 62MM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
NTC Thermistor: No
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 24.5 nF @ 25 V
Description: MEDIUM POWER 62MM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
NTC Thermistor: No
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 24.5 nF @ 25 V
на замовлення 28 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 9864.66 грн |
| 10+ | 8309.53 грн |
| IGT65R055D2ATMA1 |
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Виробник: Infineon Technologies
Description: IGT65R055D2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
Description: IGT65R055D2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
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| IGT65R055D2ATMA1 |
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Виробник: Infineon Technologies
Description: IGT65R055D2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
Description: IGT65R055D2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
на замовлення 485 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 495.72 грн |
| 10+ | 321.35 грн |
| 100+ | 235.94 грн |
| IRF630NPBFAKMA1 |
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Виробник: Infineon Technologies
Description: PLANAR 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
Description: PLANAR 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
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| SHIELDBTS70082EPZTOBO1 |
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Виробник: Infineon Technologies
Description: SHIELD_BTS7008-2EPZ
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7008-2EPZ
Description: SHIELD_BTS7008-2EPZ
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7008-2EPZ
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 7332.88 грн |
| SHIELDBTS70401EPZTOBO1 |
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Виробник: Infineon Technologies
Description: SHIELD_BTS7040-1EPZ
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7040-1EPZ
Description: SHIELD_BTS7040-1EPZ
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7040-1EPZ
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 7247.12 грн |
| IPW65R060CM8XKSA1 |
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Виробник: Infineon Technologies
Description: IPW65R060CM8XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.7A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 440µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2462 pF @ 400 V
Description: IPW65R060CM8XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.7A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 440µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2462 pF @ 400 V
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| TDB6HK180N16RRPB11BPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 175°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 220 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1600A @ 50Hz
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 175°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 220 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1600A @ 50Hz
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.6 kV
на замовлення 20 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 7290.86 грн |
| 10+ | 5801.00 грн |
| FS100R12W2T7B11ABPSA2 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 100A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 8 µA
Input Capacitance (Cies) @ Vce: 21700 pF @ 25 V
Description: IGBT MODULE 1200V 100A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 8 µA
Input Capacitance (Cies) @ Vce: 21700 pF @ 25 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 5094.42 грн |
| 15+ | 3774.06 грн |
| IMCQ120R026M2HXTMA1 |
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Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 82A 22PWRBSOP
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 25.4mOhm @ 27A, 18V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-22-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 800 V
Description: SICFET N-CH 1200V 82A 22PWRBSOP
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 25.4mOhm @ 27A, 18V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-22-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 800 V
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| IMCQ120R026M2HXTMA1 |
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Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 82A 22PWRBSOP
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 25.4mOhm @ 27A, 18V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-22-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 800 V
Description: SICFET N-CH 1200V 82A 22PWRBSOP
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 25.4mOhm @ 27A, 18V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-22-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 800 V
на замовлення 448 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 971.71 грн |
| 10+ | 653.93 грн |
| 100+ | 572.77 грн |



























