Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (129568) > Сторінка 764 з 2160
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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ITS6080SEPDXUMA1 | Infineon Technologies |
Description: PROFETPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: Logic Switch Type: General Purpose Output Configuration: High Side Rds On (Typ): 80mOhm (Max) Input Type: Non-Inverting Voltage - Load: 60V Voltage - Supply (Vcc/Vdd): 60V Current - Output (Max): 8A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSDSO-14 Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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S27KL0642DPBHI023 | Infineon Technologies |
Description: IC PSRAM 64MBIT HYPERBUS 24FBGAPackaging: Cut Tape (CT) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 166 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Write Cycle Time - Word, Page: 36ns Memory Interface: HyperBus Access Time: 36 ns Memory Organization: 8M x 8 DigiKey Programmable: Not Verified |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IQE018N06NM6SCATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100VPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 178A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 51µA Supplier Device Package: PG-WHSON-8-1 Drive Voltage (Max Rds On, Min Rds On): 8V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 30 V |
на замовлення 3602 шт: термін постачання 21-31 дні (днів) |
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| ISC019N10NM8ATMA1 | Infineon Technologies |
Description: ISC019N10NM8ATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||
| ISC019N10NM8ATMA1 | Infineon Technologies |
Description: ISC019N10NM8ATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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ISC019N10NM8SCATMA1 | Infineon Technologies |
Description: ISC019N10NM8SCATMA1Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 245A (Tc) Rds On (Max) @ Id, Vgs: 1.93mOhm @ 50A, 15V Power Dissipation (Max): 3W (Ta), 268W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 114µA Supplier Device Package: PG-WSON-8-2 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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ISC019N10NM8SCATMA1 | Infineon Technologies |
Description: ISC019N10NM8SCATMA1Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 245A (Tc) Rds On (Max) @ Id, Vgs: 1.93mOhm @ 50A, 15V Power Dissipation (Max): 3W (Ta), 268W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 114µA Supplier Device Package: PG-WSON-8-2 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S78HS512TC0BHB013 | Infineon Technologies |
Description: IC FLASH RAM 512MBIT SPI 24FBGAPackaging: Tape & Reel (TR) Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 512Mbit (FLASH), 64Mbit (RAM) Memory Type: Non-Volatile, Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH, RAM Clock Frequency: 200 MHz Memory Format: FLASH, RAM Supplier Device Package: 24-FBGA (8x8) Memory Interface: SPI - Octal I/O DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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S78HS512TC0BHB013 | Infineon Technologies |
Description: IC FLASH RAM 512MBIT SPI 24FBGAPackaging: Cut Tape (CT) Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 512Mbit (FLASH), 64Mbit (RAM) Memory Type: Non-Volatile, Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH, RAM Clock Frequency: 200 MHz Memory Format: FLASH, RAM Supplier Device Package: 24-FBGA (8x8) Memory Interface: SPI - Octal I/O DigiKey Programmable: Not Verified |
на замовлення 1900 шт: термін постачання 21-31 дні (днів) |
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IGLR65R200D2XUMA1 | Infineon Technologies |
Description: GANFET N-CH 650V 9.2A 8TDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 2.1A Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 710µA Supplier Device Package: PG-TSON-8-8 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 1.26 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 91 pF @ 400 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IGLR65R200D2XUMA1 | Infineon Technologies |
Description: GANFET N-CH 650V 9.2A 8TDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 2.1A Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 710µA Supplier Device Package: PG-TSON-8-8 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 1.26 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 91 pF @ 400 V |
на замовлення 6543 шт: термін постачання 21-31 дні (днів) |
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GS0650111LMRXUSA1 | Infineon Technologies |
Description: GS-065-011-1-L-MRPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V Vgs(th) (Max) @ Id: 2.6V @ 2.4mA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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GS0650111LMRXUSA1 | Infineon Technologies |
Description: GS-065-011-1-L-MRPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V Vgs(th) (Max) @ Id: 2.6V @ 2.4mA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V |
на замовлення 354 шт: термін постачання 21-31 дні (днів) |
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IGT65R045D2ATMA1 | Infineon Technologies |
Description: GANFET N-CH 650V 38A 8PSFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 10A Power Dissipation (Max): 131W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 3.3mA Supplier Device Package: PG-HSOF-8 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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IGT65R045D2ATMA1 | Infineon Technologies |
Description: GANFET N-CH 650V 38A 8PSFNPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 10A Power Dissipation (Max): 131W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 3.3mA Supplier Device Package: PG-HSOF-8 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V |
на замовлення 1136 шт: термін постачання 21-31 дні (днів) |
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IGLT65R045D2ATMA1 | Infineon Technologies |
Description: GANFET N-CH 650V 38A 16SOPPackaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 10A Power Dissipation (Max): 124W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 3.3mA Supplier Device Package: PG-HDSOP-16-8 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||||
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IGLT65R045D2ATMA1 | Infineon Technologies |
Description: GANFET N-CH 650V 38A 16SOPPackaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 10A Power Dissipation (Max): 124W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 3.3mA Supplier Device Package: PG-HDSOP-16-8 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V |
на замовлення 469 шт: термін постачання 21-31 дні (днів) |
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GS0650182LMRXUSA1 | Infineon Technologies |
Description: GS-065-018-2-L-MRPackaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 5.5A, 6V Vgs(th) (Max) @ Id: 2.6V @ 4.8mA Supplier Device Package: 8-PDFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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GS0650182LMRXUSA1 | Infineon Technologies |
Description: GS-065-018-2-L-MRPackaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 5.5A, 6V Vgs(th) (Max) @ Id: 2.6V @ 4.8mA Supplier Device Package: 8-PDFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V |
на замовлення 443 шт: термін постачання 21-31 дні (днів) |
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S25FL512SAGMFAG13 | Infineon Technologies |
Description: IC FLASH 512MBIT SPI/QUAD 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Grade: Automotive Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 1450 шт В кошику од. на суму грн. | ||||||||||||||
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IPTC017N10NM5LF2ATMA1 | Infineon Technologies |
Description: TRENCH >=100VPackaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 15V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 280µA Supplier Device Package: PG-HDSOP-16-2 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||||
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IPTC017N10NM5LF2ATMA1 | Infineon Technologies |
Description: TRENCH >=100VPackaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 15V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 280µA Supplier Device Package: PG-HDSOP-16-2 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V |
на замовлення 769 шт: термін постачання 21-31 дні (днів) |
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IMSQ120R026M2HHXUMA1 | Infineon Technologies |
Description: SICFET 2N-CH 1200V 83A HDSOP16Packaging: Tape & Reel (TR) Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) Power - Max: 410W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 83A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 800V Rds On (Max) @ Id, Vgs: 26mOhm @ 27A, 18V Gate Charge (Qg) (Max) @ Vgs: 54nC @ 0V Vgs(th) (Max) @ Id: 5.1V @ 8.6mA Supplier Device Package: PG-HDSOP-16-221 |
товару немає в наявності |
Мінімальне замовлення: 750 шт В кошику од. на суму грн. | ||||||||||||||
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IMSQ120R026M2HHXUMA1 | Infineon Technologies |
Description: SICFET 2N-CH 1200V 83A HDSOP16Packaging: Cut Tape (CT) Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) Power - Max: 410W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 83A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 800V Rds On (Max) @ Id, Vgs: 26mOhm @ 27A, 18V Gate Charge (Qg) (Max) @ Vgs: 54nC @ 0V Vgs(th) (Max) @ Id: 5.1V @ 8.6mA Supplier Device Package: PG-HDSOP-16-221 |
на замовлення 546 шт: термін постачання 21-31 дні (днів) |
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IPC020N10L3X1SA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 1A SAWN ON FOILPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tj) Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 2.1V @ 12µA Supplier Device Package: Sawn on foil Drive Voltage (Max Rds On, Min Rds On): 4.5V Drain to Source Voltage (Vdss): 100 V |
товару немає в наявності |
Мінімальне замовлення: 69830 шт В кошику од. на суму грн. | ||||||||||||||
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REFDOORCONTROLTOBO1 | Infineon Technologies |
Description: REFDOORCONTROLTOBO1Packaging: Box Function: Motor Controller/Driver Type: Power Management Contents: Board(s) Utilized IC / Part: BTM90x1, BTS7200, TLE9166EQ, TLE9562 Primary Attributes: 5.5V ~ 20V Supply Embedded: No |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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| EVAL2KWSICIHTOBO1 | Infineon Technologies |
Description: EVAL2KWSICIHTOBO1 Packaging: Box Function: MOSFET Type: Power Management Contents: Board(s) Embedded: No |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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IAUMN10S5N017GAUMA1 | Infineon Technologies |
Description: MOSFET_(75V 120V(Packaging: Cut Tape (CT) Package / Case: 4-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Power Dissipation (Max): 307W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 215µA Supplier Device Package: PG-HSOG-4-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12514 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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IR21531PBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8DIPPackaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 10V ~ 15.6V Input Type: RC Input Circuit High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 80ns, 45ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) DigiKey Programmable: Not Verified |
на замовлення 24049 шт: термін постачання 21-31 дні (днів) |
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CY9BF217TBGL-GK7E1 | Infineon Technologies |
Description: IC MCU 32BIT 768KB FLASH 192FBGAPackaging: Tray Package / Case: 192-LFBGA Mounting Type: Surface Mount Speed: 144MHz Program Memory Size: 768KB (768K x 8) RAM Size: 96K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 32x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, EBI/EMI, Ethernet, I2C, LINbus, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 192-FBGA (12x12) Number of I/O: 154 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1520 шт В кошику од. на суму грн. | ||||||||||||||
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REFAUDIOGANB750WTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR IRS20957SPackaging: Box Output Type: 1-Channel (Mono) or 2-Channel (Stereo) Amplifier Type: Class D Contents: Board(s) Voltage - Supply: ±36V Max Output Power x Channels @ Load: 750W x 1 @ 4Ohm; 375W x 2 @ 2Ohm Utilized IC / Part: IRS20957S |
на замовлення 14 шт: термін постачання 21-31 дні (днів) |
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IM241S6S1BALMA1 | Infineon Technologies |
Description: IGBT IPM 600V 4A 23-PWRSMD MODPackaging: Tube Package / Case: 23-PowerSMD Module Mounting Type: Surface Mount Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2000Vrms Current: 4 A Voltage: 600 V |
на замовлення 237 шт: термін постачання 21-31 дні (днів) |
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IM241S6S1JALMA1 | Infineon Technologies |
Description: IGBT IPM 600V 4A 23-PWRSMD MODPackaging: Tube Package / Case: 23-PowerSMD Module Mounting Type: Surface Mount Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2000Vrms Current: 4 A Voltage: 600 V |
на замовлення 224 шт: термін постачання 21-31 дні (днів) |
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IM241M6S1BALMA1 | Infineon Technologies |
Description: IGBT IPM 600V 4A 23-PWRSMD MODPackaging: Tube Package / Case: 23-PowerSMD Module Mounting Type: Surface Mount Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2000Vrms Current: 4 A Voltage: 600 V |
на замовлення 232 шт: термін постачання 21-31 дні (днів) |
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IM241L6S1BALMA1 | Infineon Technologies |
Description: IGBT IPM 600V 4A 23-PWRSMD MODPackaging: Tube Package / Case: 23-PowerSMD Module Mounting Type: Surface Mount Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2000Vrms Current: 4 A Voltage: 600 V |
на замовлення 130 шт: термін постачання 21-31 дні (днів) |
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TLE9944EQA40XUMA1 | Infineon Technologies |
Description: EMBEDDED_POWERPackaging: Cut Tape (CT) Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Interface: LINbus, SSC, UART/USART RAM Size: 6K x 8 Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 5.5V ~ 29V Controller Series: TLE9944 Program Memory Type: FLASH (72kB) Applications: BLDC Controller Core Processor: ARM® Cortex®-M23 Supplier Device Package: PG-TSDSO-32-1 Number of I/O: 8 |
на замовлення 2996 шт: термін постачання 21-31 дні (днів) |
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PSC3M3EDACQ1XQLA1 | Infineon Technologies |
Description: INDUSTRIAL-PSOC C3Packaging: Tray Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 199MHz Program Memory Size: 128KB (128K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M33F Data Converters: A/D 18x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V Connectivity: CANbus, I2C, IrDA, LINbus, SPI, Smart Card, UART/USART Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: PG-TQFP-64-22 Number of I/O: 39 |
на замовлення 1520 шт: термін постачання 21-31 дні (днів) |
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PSC3P2EDACQ1XQLA1 | Infineon Technologies |
Description: INDUSTRIAL-PSOC C3Packaging: Tray Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 199MHz Program Memory Size: 128KB (128K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M33F Data Converters: A/D 18x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V Connectivity: I2C, IrDA, LINbus, SPI, SmartCard, UART/USART Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: PG-TQFP-64-22 Number of I/O: 39 |
на замовлення 1565 шт: термін постачання 21-31 дні (днів) |
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PSC3P2FDS2ACQ1XQLA1 | Infineon Technologies |
Description: INDUSTRIAL-PSOC C3Packaging: Tray Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 199MHz Program Memory Size: 256KB (256K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M33F Data Converters: A/D 18x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V Connectivity: I2C, IrDA, LINbus, SPI, SmartCard, UART/USART Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: PG-TQFP-64-22 Number of I/O: 39 |
на замовлення 1597 шт: термін постачання 21-31 дні (днів) |
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PSC3M5EDACQ1XQLA1 | Infineon Technologies |
Description: INDUSTRIAL-PSOC C3Packaging: Tray Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 199MHz Program Memory Size: 128KB (128K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M33F Data Converters: A/D 18x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V Connectivity: CANbus, I2C, IrDA, LINbus, SPI, Smart Card, UART/USART Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: PG-TQFP-64-22 Number of I/O: 39 |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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PSC3P5FDS2ACQ1XQLA1 | Infineon Technologies |
Description: INDUSTRIAL-PSOC C3Packaging: Tray Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 199MHz Program Memory Size: 256KB (256K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M33F Data Converters: A/D 18x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V Connectivity: CANbus, I2C, IrDA, LINbus, SPI, Smart Card, UART/USART Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: PG-TQFP-64-22 Number of I/O: 39 |
на замовлення 1599 шт: термін постачання 21-31 дні (днів) |
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XMC1301T038X0064ABXUMA2 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 38TSSOPPackaging: Cut Tape (CT) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-38-9 Number of I/O: 26 DigiKey Programmable: Not Verified |
на замовлення 2961 шт: термін постачання 21-31 дні (днів) |
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CY62256VLL-70SNC | Infineon Technologies |
Description: IC SRAM 256KBIT PARALLEL 28SOICPackaging: Tube Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 28-SOIC Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1350 шт В кошику од. на суму грн. | ||||||||||||||
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CY62256VLL-70ZC | Infineon Technologies |
Description: IC SRAM 256KBIT PAR 28TSOP IPackaging: Bag Package / Case: 28-TSSOP (0.465", 11.80mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 28-TSOP I Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1170 шт В кошику од. на суму грн. | ||||||||||||||
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CY62256VLL-70ZXIT | Infineon Technologies |
Description: IC SRAM 256KBIT PAR 28TSOP IPackaging: Tape & Reel (TR) Package / Case: 28-TSSOP (0.465", 11.80mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 28-TSOP I Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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CY62256VNLL-70SNXC | Infineon Technologies |
Description: IC SRAM 256KBIT PARALLEL 28SOICPackaging: Tube Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 28-SOIC Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY62256VNLL-70ZXI | Infineon Technologies |
Description: IC SRAM 256KBIT PAR 28TSOP IPackaging: Tray Package / Case: 28-TSSOP (0.465", 11.80mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 28-TSOP I Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY62128EV30LL-45ZAXA | Infineon Technologies |
Description: IC SRAM 1MBIT PARALLEL 32STSOPPackaging: Tray Package / Case: 32-TFSOP (0.465", 11.80mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-sTSOP Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IR35203MTRPBF | Infineon Technologies |
Description: IC CTRLR PWM MULTIPHASE 48QFNPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Applications: Multiphase Controller Supplier Device Package: 48-QFN (6x6) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IR35203MTRPBF | Infineon Technologies |
Description: IC CTRLR PWM MULTIPHASE 48QFNPackaging: Bulk Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Applications: Multiphase Controller Supplier Device Package: 48-QFN (6x6) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CY2544FI | Infineon Technologies |
Description: IC FANOUT DIST 24QFNPackaging: Tray Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Output: Clock Frequency - Max: 166MHz Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator Input: LVCMOS, Crystal Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.25V ~ 3.6V Ratio - Input:Output: 1:9 Differential - Input:Output: No/No Supplier Device Package: 24-QFN (4x4) PLL: Yes with Bypass Divider/Multiplier: Yes/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 485 шт: термін постачання 21-31 дні (днів) |
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| PEB22716TV1.5 | Infineon Technologies |
Description: GEMINAX MULTIPORT INTEGRATED AD Packaging: Bulk |
на замовлення 3554 шт: термін постачання 21-31 дні (днів) |
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CY2300SXC | Infineon Technologies |
Description: IC CLOCK MULTIPLIER 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: LVCMOS Frequency - Max: 166.67MHz Type: Clock Multiplier, Fanout Distribution Input: LVCMOS, LVTTL Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:4 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: Yes Divider/Multiplier: Yes/Yes Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 314 шт: термін постачання 21-31 дні (днів) |
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IAUCN04S7L037HATMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V)Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 84A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 20V Rds On (Max) @ Id, Vgs: 3.78mOhm @ 45A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 15µA Supplier Device Package: PG-TDSON-8-56 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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IAUCN04S7L037HATMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V)Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 84A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 20V Rds On (Max) @ Id, Vgs: 3.78mOhm @ 45A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 15µA Supplier Device Package: PG-TDSON-8-56 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 436 шт: термін постачання 21-31 дні (днів) |
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| XDPE1A2G5B5500XUMA1 | Infineon Technologies |
Description: DIGITAL DUAL LOOP 16-PHASE CONTRPackaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| XDPE1A2G5B5500XUMA1 | Infineon Technologies |
Description: DIGITAL DUAL LOOP 16-PHASE CONTRPackaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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CY8C4147LDES243XQLA1 | Infineon Technologies |
Description: PSOC4 - GENERALPackaging: Tray Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, Temp Sensor, TRNG, WDT Supplier Device Package: 48-QFN (7x7) Grade: Automotive Number of I/O: 40 Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2600 шт В кошику од. на суму грн. | ||||||||||||||
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CY8C4147LDES243TXUMA1 | Infineon Technologies |
Description: PSOC4 - GENERALPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, Temp Sensor, TRNG, WDT Supplier Device Package: 48-QFN (7x7) Grade: Automotive Number of I/O: 40 Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
| CY8C4146LDES453XQLA1 | Infineon Technologies |
Description: PSOC4 - GENERALPackaging: Tray Package / Case: 40-UFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Speed: 48MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, TRNG, WDT Supplier Device Package: 40-QFN (6x6) Grade: Automotive Number of I/O: 40 Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2600 шт В кошику од. на суму грн. |
| ITS6080SEPDXUMA1 |
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Виробник: Infineon Technologies
Description: PROFET
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 80mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 60V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage
Description: PROFET
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 80mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 60V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 212.20 грн |
| 10+ | 153.26 грн |
| 25+ | 140.48 грн |
| 100+ | 118.62 грн |
| 250+ | 112.32 грн |
| 500+ | 108.53 грн |
| 1000+ | 103.68 грн |
| S27KL0642DPBHI023 |
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Виробник: Infineon Technologies
Description: IC PSRAM 64MBIT HYPERBUS 24FBGA
Packaging: Cut Tape (CT)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 166 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 36ns
Memory Interface: HyperBus
Access Time: 36 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 64MBIT HYPERBUS 24FBGA
Packaging: Cut Tape (CT)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 166 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 36ns
Memory Interface: HyperBus
Access Time: 36 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 959.66 грн |
| 10+ | 858.16 грн |
| 25+ | 831.67 грн |
| 50+ | 761.79 грн |
| 100+ | 743.18 грн |
| 250+ | 718.86 грн |
| 500+ | 689.27 грн |
| IQE018N06NM6SCATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 51µA
Supplier Device Package: PG-WHSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 30 V
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 51µA
Supplier Device Package: PG-WHSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 30 V
на замовлення 3602 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 261.29 грн |
| 10+ | 164.08 грн |
| 50+ | 126.49 грн |
| 100+ | 107.33 грн |
| 500+ | 87.40 грн |
| ISC019N10NM8ATMA1 |
Виробник: Infineon Technologies
Description: ISC019N10NM8ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Description: ISC019N10NM8ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| ISC019N10NM8ATMA1 |
Виробник: Infineon Technologies
Description: ISC019N10NM8ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Description: ISC019N10NM8ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
товару немає в наявності
В кошику
од. на суму грн.
| ISC019N10NM8SCATMA1 |
![]() |
Виробник: Infineon Technologies
Description: ISC019N10NM8SCATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.93mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 268W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 114µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
Description: ISC019N10NM8SCATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.93mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 268W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 114µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| ISC019N10NM8SCATMA1 |
![]() |
Виробник: Infineon Technologies
Description: ISC019N10NM8SCATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.93mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 268W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 114µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
Description: ISC019N10NM8SCATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.93mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 268W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 114µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| S78HS512TC0BHB013 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH RAM 512MBIT SPI 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH, RAM
Clock Frequency: 200 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 24-FBGA (8x8)
Memory Interface: SPI - Octal I/O
DigiKey Programmable: Not Verified
Description: IC FLASH RAM 512MBIT SPI 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH, RAM
Clock Frequency: 200 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 24-FBGA (8x8)
Memory Interface: SPI - Octal I/O
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| S78HS512TC0BHB013 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH RAM 512MBIT SPI 24FBGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH, RAM
Clock Frequency: 200 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 24-FBGA (8x8)
Memory Interface: SPI - Octal I/O
DigiKey Programmable: Not Verified
Description: IC FLASH RAM 512MBIT SPI 24FBGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH, RAM
Clock Frequency: 200 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 24-FBGA (8x8)
Memory Interface: SPI - Octal I/O
DigiKey Programmable: Not Verified
на замовлення 1900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2393.60 грн |
| 10+ | 2133.02 грн |
| 25+ | 2064.96 грн |
| 50+ | 1890.00 грн |
| 100+ | 1842.71 грн |
| 250+ | 1781.33 грн |
| IGLR65R200D2XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: GANFET N-CH 650V 9.2A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.1A
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 710µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.26 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 91 pF @ 400 V
Description: GANFET N-CH 650V 9.2A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.1A
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 710µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.26 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 91 pF @ 400 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 56.51 грн |
| IGLR65R200D2XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: GANFET N-CH 650V 9.2A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.1A
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 710µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.26 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 91 pF @ 400 V
Description: GANFET N-CH 650V 9.2A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.1A
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 710µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.26 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 91 pF @ 400 V
на замовлення 6543 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 201.91 грн |
| 10+ | 125.35 грн |
| 50+ | 95.66 грн |
| 100+ | 80.79 грн |
| 500+ | 65.01 грн |
| GS0650111LMRXUSA1 |
![]() |
Виробник: Infineon Technologies
Description: GS-065-011-1-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
Description: GS-065-011-1-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 250+ | 166.95 грн |
| GS0650111LMRXUSA1 |
![]() |
Виробник: Infineon Technologies
Description: GS-065-011-1-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
Description: GS-065-011-1-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
на замовлення 354 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 391.15 грн |
| 10+ | 250.85 грн |
| 50+ | 196.92 грн |
| 100+ | 168.51 грн |
| IGT65R045D2ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: GANFET N-CH 650V 38A 8PSFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
Description: GANFET N-CH 650V 38A 8PSFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IGT65R045D2ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: GANFET N-CH 650V 38A 8PSFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
Description: GANFET N-CH 650V 38A 8PSFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
на замовлення 1136 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 602.56 грн |
| 10+ | 394.50 грн |
| 50+ | 315.07 грн |
| 100+ | 271.69 грн |
| 500+ | 267.07 грн |
| IGLT65R045D2ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: GANFET N-CH 650V 38A 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
Description: GANFET N-CH 650V 38A 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
од. на суму грн.
| IGLT65R045D2ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: GANFET N-CH 650V 38A 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
Description: GANFET N-CH 650V 38A 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
на замовлення 469 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 602.56 грн |
| 10+ | 394.50 грн |
| 50+ | 315.07 грн |
| 100+ | 271.69 грн |
| GS0650182LMRXUSA1 |
![]() |
Виробник: Infineon Technologies
Description: GS-065-018-2-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
Description: GS-065-018-2-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 250+ | 297.87 грн |
| GS0650182LMRXUSA1 |
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Виробник: Infineon Technologies
Description: GS-065-018-2-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
Description: GS-065-018-2-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
на замовлення 443 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 652.44 грн |
| 10+ | 428.81 грн |
| 50+ | 343.77 грн |
| 100+ | 296.95 грн |
| S25FL512SAGMFAG13 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 1450 шт
В кошику
од. на суму грн.
| IPTC017N10NM5LF2ATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
од. на суму грн.
| IPTC017N10NM5LF2ATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
на замовлення 769 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 553.47 грн |
| 10+ | 360.57 грн |
| 50+ | 286.84 грн |
| 100+ | 246.95 грн |
| 500+ | 238.42 грн |
| IMSQ120R026M2HHXUMA1 |
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Виробник: Infineon Technologies
Description: SICFET 2N-CH 1200V 83A HDSOP16
Packaging: Tape & Reel (TR)
Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
Power - Max: 410W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 800V
Rds On (Max) @ Id, Vgs: 26mOhm @ 27A, 18V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 0V
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-16-221
Description: SICFET 2N-CH 1200V 83A HDSOP16
Packaging: Tape & Reel (TR)
Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
Power - Max: 410W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 800V
Rds On (Max) @ Id, Vgs: 26mOhm @ 27A, 18V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 0V
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-16-221
товару немає в наявності
Мінімальне замовлення: 750 шт
В кошику
од. на суму грн.
| IMSQ120R026M2HHXUMA1 |
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Виробник: Infineon Technologies
Description: SICFET 2N-CH 1200V 83A HDSOP16
Packaging: Cut Tape (CT)
Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
Power - Max: 410W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 800V
Rds On (Max) @ Id, Vgs: 26mOhm @ 27A, 18V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 0V
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-16-221
Description: SICFET 2N-CH 1200V 83A HDSOP16
Packaging: Cut Tape (CT)
Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
Power - Max: 410W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 800V
Rds On (Max) @ Id, Vgs: 26mOhm @ 27A, 18V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 0V
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-16-221
на замовлення 546 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1715.03 грн |
| 10+ | 1191.97 грн |
| 50+ | 1106.59 грн |
| IPC020N10L3X1SA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 12µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Drain to Source Voltage (Vdss): 100 V
Description: MOSFET N-CH 100V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 12µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Drain to Source Voltage (Vdss): 100 V
товару немає в наявності
Мінімальне замовлення: 69830 шт
В кошику
од. на суму грн.
| REFDOORCONTROLTOBO1 |
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Виробник: Infineon Technologies
Description: REFDOORCONTROLTOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTM90x1, BTS7200, TLE9166EQ, TLE9562
Primary Attributes: 5.5V ~ 20V Supply
Embedded: No
Description: REFDOORCONTROLTOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTM90x1, BTS7200, TLE9166EQ, TLE9562
Primary Attributes: 5.5V ~ 20V Supply
Embedded: No
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 23299.44 грн |
| EVAL2KWSICIHTOBO1 |
Виробник: Infineon Technologies
Description: EVAL2KWSICIHTOBO1
Packaging: Box
Function: MOSFET
Type: Power Management
Contents: Board(s)
Embedded: No
Description: EVAL2KWSICIHTOBO1
Packaging: Box
Function: MOSFET
Type: Power Management
Contents: Board(s)
Embedded: No
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 22616.12 грн |
| IAUMN10S5N017GAUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 307W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 215µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12514 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 307W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 215µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12514 pF @ 50 V
Qualification: AEC-Q101
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 271.59 грн |
| 10+ | 197.86 грн |
| 25+ | 181.93 грн |
| 100+ | 154.27 грн |
| 250+ | 146.43 грн |
| 500+ | 141.70 грн |
| 1000+ | 135.55 грн |
| IR21531PBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
DigiKey Programmable: Not Verified
на замовлення 24049 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 140+ | 164.76 грн |
| CY9BF217TBGL-GK7E1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 768KB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, Ethernet, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 154
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 768KB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, Ethernet, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 154
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1520 шт
В кошику
од. на суму грн.
| REFAUDIOGANB750WTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR IRS20957S
Packaging: Box
Output Type: 1-Channel (Mono) or 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: ±36V
Max Output Power x Channels @ Load: 750W x 1 @ 4Ohm; 375W x 2 @ 2Ohm
Utilized IC / Part: IRS20957S
Description: EVAL BOARD FOR IRS20957S
Packaging: Box
Output Type: 1-Channel (Mono) or 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: ±36V
Max Output Power x Channels @ Load: 750W x 1 @ 4Ohm; 375W x 2 @ 2Ohm
Utilized IC / Part: IRS20957S
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 22240.02 грн |
| IM241S6S1BALMA1 |
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Виробник: Infineon Technologies
Description: IGBT IPM 600V 4A 23-PWRSMD MOD
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
Description: IGBT IPM 600V 4A 23-PWRSMD MOD
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
на замовлення 237 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 415.69 грн |
| 15+ | 295.74 грн |
| 30+ | 279.52 грн |
| 105+ | 241.27 грн |
| IM241S6S1JALMA1 |
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Виробник: Infineon Technologies
Description: IGBT IPM 600V 4A 23-PWRSMD MOD
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
Description: IGBT IPM 600V 4A 23-PWRSMD MOD
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
на замовлення 224 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 415.69 грн |
| 15+ | 295.74 грн |
| 30+ | 279.52 грн |
| 105+ | 241.27 грн |
| IM241M6S1BALMA1 |
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Виробник: Infineon Technologies
Description: IGBT IPM 600V 4A 23-PWRSMD MOD
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
Description: IGBT IPM 600V 4A 23-PWRSMD MOD
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
на замовлення 232 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 451.32 грн |
| 15+ | 322.47 грн |
| 30+ | 304.99 грн |
| 105+ | 263.57 грн |
| IM241L6S1BALMA1 |
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Виробник: Infineon Technologies
Description: IGBT IPM 600V 4A 23-PWRSMD MOD
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
Description: IGBT IPM 600V 4A 23-PWRSMD MOD
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
на замовлення 130 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 495.67 грн |
| 15+ | 355.67 грн |
| 30+ | 336.68 грн |
| 105+ | 291.36 грн |
| TLE9944EQA40XUMA1 |
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Виробник: Infineon Technologies
Description: EMBEDDED_POWER
Packaging: Cut Tape (CT)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SSC, UART/USART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 29V
Controller Series: TLE9944
Program Memory Type: FLASH (72kB)
Applications: BLDC Controller
Core Processor: ARM® Cortex®-M23
Supplier Device Package: PG-TSDSO-32-1
Number of I/O: 8
Description: EMBEDDED_POWER
Packaging: Cut Tape (CT)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SSC, UART/USART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 29V
Controller Series: TLE9944
Program Memory Type: FLASH (72kB)
Applications: BLDC Controller
Core Processor: ARM® Cortex®-M23
Supplier Device Package: PG-TSDSO-32-1
Number of I/O: 8
на замовлення 2996 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 322.26 грн |
| 10+ | 235.30 грн |
| 50+ | 205.18 грн |
| 100+ | 183.80 грн |
| 500+ | 168.99 грн |
| PSC3M3EDACQ1XQLA1 |
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Виробник: Infineon Technologies
Description: INDUSTRIAL-PSOC C3
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 199MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33F
Data Converters: A/D 18x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, Smart Card, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-22
Number of I/O: 39
Description: INDUSTRIAL-PSOC C3
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 199MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33F
Data Converters: A/D 18x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, Smart Card, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-22
Number of I/O: 39
на замовлення 1520 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 618.39 грн |
| 10+ | 461.52 грн |
| 50+ | 408.09 грн |
| 100+ | 367.44 грн |
| 160+ | 358.50 грн |
| 640+ | 338.07 грн |
| PSC3P2EDACQ1XQLA1 |
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Виробник: Infineon Technologies
Description: INDUSTRIAL-PSOC C3
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 199MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33F
Data Converters: A/D 18x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, SmartCard, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-22
Number of I/O: 39
Description: INDUSTRIAL-PSOC C3
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 199MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33F
Data Converters: A/D 18x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, SmartCard, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-22
Number of I/O: 39
на замовлення 1565 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 589.10 грн |
| 10+ | 439.49 грн |
| 50+ | 388.20 грн |
| 100+ | 349.42 грн |
| 160+ | 340.84 грн |
| 640+ | 321.25 грн |
| PSC3P2FDS2ACQ1XQLA1 |
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Виробник: Infineon Technologies
Description: INDUSTRIAL-PSOC C3
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 199MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33F
Data Converters: A/D 18x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, SmartCard, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-22
Number of I/O: 39
Description: INDUSTRIAL-PSOC C3
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 199MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33F
Data Converters: A/D 18x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, SmartCard, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-22
Number of I/O: 39
на замовлення 1597 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 613.64 грн |
| 10+ | 458.25 грн |
| 50+ | 405.10 грн |
| 100+ | 364.73 грн |
| 160+ | 355.85 грн |
| 640+ | 335.54 грн |
| PSC3M5EDACQ1XQLA1 |
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Виробник: Infineon Technologies
Description: INDUSTRIAL-PSOC C3
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 199MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33F
Data Converters: A/D 18x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, Smart Card, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-22
Number of I/O: 39
Description: INDUSTRIAL-PSOC C3
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 199MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33F
Data Converters: A/D 18x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, Smart Card, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-22
Number of I/O: 39
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 486.96 грн |
| 10+ | 361.56 грн |
| 25+ | 334.73 грн |
| 100+ | 286.37 грн |
| 250+ | 273.14 грн |
| 500+ | 265.16 грн |
| 1600+ | 250.65 грн |
| PSC3P5FDS2ACQ1XQLA1 |
![]() |
Виробник: Infineon Technologies
Description: INDUSTRIAL-PSOC C3
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 199MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33F
Data Converters: A/D 18x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, Smart Card, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-22
Number of I/O: 39
Description: INDUSTRIAL-PSOC C3
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 199MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33F
Data Converters: A/D 18x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, Smart Card, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-22
Number of I/O: 39
на замовлення 1599 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 490.91 грн |
| 10+ | 364.00 грн |
| 25+ | 336.98 грн |
| 100+ | 288.33 грн |
| 250+ | 275.02 грн |
| 500+ | 267.00 грн |
| XMC1301T038X0064ABXUMA2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Number of I/O: 26
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Number of I/O: 26
DigiKey Programmable: Not Verified
на замовлення 2961 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 190.82 грн |
| 10+ | 137.17 грн |
| 50+ | 118.26 грн |
| 100+ | 105.49 грн |
| 500+ | 96.18 грн |
| CY62256VLL-70SNC |
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Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 256KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1350 шт
В кошику
од. на суму грн.
| CY62256VLL-70ZC |
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Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1170 шт
В кошику
од. на суму грн.
| CY62256VLL-70ZXIT |
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Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| CY62256VNLL-70SNXC |
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Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 256KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| CY62256VNLL-70ZXI |
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Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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В кошику
од. на суму грн.
| CY62128EV30LL-45ZAXA |
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Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32STSOP
Packaging: Tray
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PARALLEL 32STSOP
Packaging: Tray
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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В кошику
од. на суму грн.
| IR35203MTRPBF |
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Виробник: Infineon Technologies
Description: IC CTRLR PWM MULTIPHASE 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: Multiphase Controller
Supplier Device Package: 48-QFN (6x6)
Description: IC CTRLR PWM MULTIPHASE 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: Multiphase Controller
Supplier Device Package: 48-QFN (6x6)
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од. на суму грн.
| IR35203MTRPBF |
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Виробник: Infineon Technologies
Description: IC CTRLR PWM MULTIPHASE 48QFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: Multiphase Controller
Supplier Device Package: 48-QFN (6x6)
Description: IC CTRLR PWM MULTIPHASE 48QFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: Multiphase Controller
Supplier Device Package: 48-QFN (6x6)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 76+ | 264.47 грн |
| CY2544FI |
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Виробник: Infineon Technologies
Description: IC FANOUT DIST 24QFN
Packaging: Tray
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC FANOUT DIST 24QFN
Packaging: Tray
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 485 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 641.36 грн |
| 10+ | 477.92 грн |
| 25+ | 442.94 грн |
| 100+ | 379.59 грн |
| PEB22716TV1.5 |
на замовлення 3554 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 1104.29 грн |
| CY2300SXC |
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Виробник: Infineon Technologies
Description: IC CLOCK MULTIPLIER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 166.67MHz
Type: Clock Multiplier, Fanout Distribution
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK MULTIPLIER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 166.67MHz
Type: Clock Multiplier, Fanout Distribution
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 314 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1445.03 грн |
| 10+ | 1112.83 грн |
| 25+ | 1043.28 грн |
| 100+ | 907.35 грн |
| IAUCN04S7L037HATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 84A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 20V
Rds On (Max) @ Id, Vgs: 3.78mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 15µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 84A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 20V
Rds On (Max) @ Id, Vgs: 3.78mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 15µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IAUCN04S7L037HATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 84A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 20V
Rds On (Max) @ Id, Vgs: 3.78mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 15µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 84A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 20V
Rds On (Max) @ Id, Vgs: 3.78mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 15µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
на замовлення 436 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 151.23 грн |
| 10+ | 93.02 грн |
| 50+ | 70.19 грн |
| 100+ | 58.97 грн |
| XDPE1A2G5B5500XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: DIGITAL DUAL LOOP 16-PHASE CONTR
Packaging: Tape & Reel (TR)
Description: DIGITAL DUAL LOOP 16-PHASE CONTR
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| XDPE1A2G5B5500XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: DIGITAL DUAL LOOP 16-PHASE CONTR
Packaging: Cut Tape (CT)
Description: DIGITAL DUAL LOOP 16-PHASE CONTR
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| CY8C4147LDES243XQLA1 |
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Виробник: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 48-QFN (7x7)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 48-QFN (7x7)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2600 шт
В кошику
од. на суму грн.
| CY8C4147LDES243TXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 48-QFN (7x7)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 48-QFN (7x7)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| CY8C4146LDES453XQLA1 |
![]() |
Виробник: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2600 шт
В кошику
од. на суму грн.































