Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (117859) > Сторінка 765 з 1965

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TLI4971A030W2US0001XUMA1 TLI4971A030W2US0001XUMA1 Infineon Technologies infineon-tli4971-25-50-75-120-datasheet-en.pdf Description: CURRENT SENS CONS & IND
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±1.7%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 30A
Grade: Automotive
Number of Channels: 1
Qualification: AEC-Q100
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TLI4971A030W2US0001XUMA1 TLI4971A030W2US0001XUMA1 Infineon Technologies infineon-tli4971-25-50-75-120-datasheet-en.pdf Description: CURRENT SENS CONS & IND
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±1.7%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 30A
Grade: Automotive
Number of Channels: 1
Qualification: AEC-Q100
на замовлення 1495 шт:
термін постачання 21-31 дні (днів)
2+308.27 грн
5+266.33 грн
10+254.93 грн
25+226.44 грн
50+217.69 грн
100+209.64 грн
500+190.31 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IR2102STRPBF IR2102STRPBF Infineon Technologies IRSDS17613-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
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IR2102STRPBF IR2102STRPBF Infineon Technologies IRSDS17613-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
на замовлення 55 шт:
термін постачання 21-31 дні (днів)
4+96.48 грн
10+67.45 грн
25+61.18 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRS2124STRPBF IRS2124STRPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 80ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 500mA, 500mA
DigiKey Programmable: Not Verified
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IRS2124STRPBF IRS2124STRPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 80ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 500mA, 500mA
DigiKey Programmable: Not Verified
на замовлення 15908 шт:
термін постачання 21-31 дні (днів)
185+110.43 грн
Мінімальне замовлення: 185
В кошику  од. на суму  грн.
FS410R12A7P1BHPSA1 FS410R12A7P1BHPSA1 Infineon Technologies infineon-fs410r12a7p1b-datasheet-en.pdf Description: IGBT MOD 1200V 300A HDG2XT-7611
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.58V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: AG-HDG2XT-7611
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 775 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 24600 pF @ 25 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+27266.17 грн
В кошику  од. на суму  грн.
BFP420FH6327XTSA1 BFP420FH6327XTSA1 Infineon Technologies Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Description: RF TRANS NPN 5.5V 25GHZ 4-TSFP
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19.5dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: 4-TSFP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1682+12.11 грн
Мінімальне замовлення: 1682
В кошику  од. на суму  грн.
IRF6662TRPBF IRF6662TRPBF Infineon Technologies irf6662pbf.pdf?fileId=5546d462533600a4015355ec7edc1a5d Description: MOSFET N-CH 100V 8.3A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.2A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V
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IRF6662TRPBF IRF6662TRPBF Infineon Technologies irf6662pbf.pdf?fileId=5546d462533600a4015355ec7edc1a5d Description: MOSFET N-CH 100V 8.3A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.2A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V
на замовлення 457 шт:
термін постачання 21-31 дні (днів)
2+214.14 грн
10+134.22 грн
100+93.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE9350BSJXTMA1 TLE9350BSJXTMA1 Infineon Technologies Infineon-TLE9350BSJ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018b66e2a1cc08e4 Description: IC TRANSCEIVER HALF 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+34.40 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLE9350BSJXTMA1 TLE9350BSJXTMA1 Infineon Technologies Infineon-TLE9350BSJ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018b66e2a1cc08e4 Description: IC TRANSCEIVER HALF 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3704 шт:
термін постачання 21-31 дні (днів)
5+72.16 грн
10+49.93 грн
25+45.11 грн
100+37.32 грн
250+34.95 грн
500+33.51 грн
1000+31.81 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
AIMZA75R008M1HXKSA1 AIMZA75R008M1HXKSA1 Infineon Technologies Infineon-AIMZA75R008M1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191b2c26c0f0e1f Description: AUTOMOTIVE_SICMOS
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 163A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 90.3A, 20V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 32.4mA
Supplier Device Package: PG-TO247-4-U02
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6137 pF @ 500 V
Qualification: AEC-Q101
на замовлення 198 шт:
термін постачання 21-31 дні (днів)
1+2401.80 грн
30+1529.58 грн
120+1522.38 грн
В кошику  од. на суму  грн.
AIMBG75R027M1HXTMA1 AIMBG75R027M1HXTMA1 Infineon Technologies Infineon-AIMBG75R027M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef042d11327b2 Description: SICFET N-CH 750V 64A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 8.8mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+503.23 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
AIMBG75R027M1HXTMA1 AIMBG75R027M1HXTMA1 Infineon Technologies Infineon-AIMBG75R027M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef042d11327b2 Description: SICFET N-CH 750V 64A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 8.8mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V
Qualification: AEC-Q101
на замовлення 1070 шт:
термін постачання 21-31 дні (днів)
1+946.76 грн
10+660.92 грн
100+593.14 грн
В кошику  од. на суму  грн.
CYPD822952LQXITXUMA1 Infineon Technologies Infineon-EZ_PD_CCG8_CFP_USBC_Power_Delivery_controller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c93dda25b019505de8fdc3683 Description: USB-C PC
Packaging: Tape & Reel (TR)
Package / Case: 52-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB), ROM (96kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0+
Supplier Device Package: 52-QFN (5x8)
Number of I/O: 20
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CYPD822952LQXIXQLA1 Infineon Technologies Infineon-EZ_PD_CCG8_CFP_USBC_Power_Delivery_controller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c93dda25b019505de8fdc3683 Description: USB-C PC
Packaging: Tray
Package / Case: 52-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB), ROM (96kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0+
Supplier Device Package: 52-QFN (5x8)
Number of I/O: 20
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EVAL60UTR11WINGTOBO1 EVAL60UTR11WINGTOBO1 Infineon Technologies UM_KIT_CSK_BGT60UTR11AIP-Wingboard_Userguide-EN.pdf Description: EVAL60UTR11WINGTOBO1
Packaging: Box
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
1+1984.51 грн
В кошику  од. на суму  грн.
AIMCQ120R040M1TXTMA1 AIMCQ120R040M1TXTMA1 Infineon Technologies AIMCQ120R040M1T_v1.10_en.pdf Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 20V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 6.4mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1264 pF @ 800 V
Qualification: AEC-Q101
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AIMCQ120R040M1TXTMA1 AIMCQ120R040M1TXTMA1 Infineon Technologies AIMCQ120R040M1T_v1.10_en.pdf Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 20V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 6.4mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1264 pF @ 800 V
Qualification: AEC-Q101
на замовлення 690 шт:
термін постачання 21-31 дні (днів)
1+844.79 грн
10+567.56 грн
100+493.81 грн
В кошику  од. на суму  грн.
ISZ015N04NM7VATMA1 ISZ015N04NM7VATMA1 Infineon Technologies 448_ISZ015N04NM7V.pdf Description: ISZ015N04NM7VATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 177A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 36µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+33.08 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
ISZ015N04NM7VATMA1 ISZ015N04NM7VATMA1 Infineon Technologies 448_ISZ015N04NM7V.pdf Description: ISZ015N04NM7VATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 177A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 36µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
на замовлення 6894 шт:
термін постачання 21-31 дні (днів)
3+127.07 грн
10+77.80 грн
100+52.40 грн
500+38.95 грн
1000+36.02 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CY8C20566-24PVXI CY8C20566-24PVXI Infineon Technologies Description: IC MCU 32K FLASH 2K SRAM 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6
Program Memory Type: FLASH (32kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-SSOP
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 1050 шт:
термін постачання 21-31 дні (днів)
1+374.94 грн
10+276.23 грн
30+251.35 грн
120+215.07 грн
270+206.16 грн
510+200.46 грн
1020+192.11 грн
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EVINVHPD2SICFS0108TOBO2 Infineon Technologies Description: OTHER
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: FS01MR08A8MA2
Embedded: No
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+405027.48 грн
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EVINVHPD2SICFS0212TOBO1 Infineon Technologies Description: OTHER
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: FS02MR12A8MA2
Embedded: No
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CY7C1354DV25-200BZI CY7C1354DV25-200BZI Infineon Technologies Description: IC SRAM 9MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.2 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
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CY7C1470BV25-200BZI CY7C1470BV25-200BZI Infineon Technologies CY7C1470%2C72%2C74BV25.pdf Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY7C1312BV18-200BZI CY7C1312BV18-200BZI Infineon Technologies CY7C1310%2C12%2C14%2C1914BV18.pdf Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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CY7C1415AV18-200BZI CY7C1415AV18-200BZI Infineon Technologies CY7C1411%2C13%2C15%2C26AV18.pdf Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1414BV18-200BZI CY7C1414BV18-200BZI Infineon Technologies CY7C1412%2C14BV18.pdf Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1470BV33-200BZI CY7C1470BV33-200BZI Infineon Technologies download Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY7C1380DV33-200BZI CY7C1380DV33-200BZI Infineon Technologies Infineon-CY7C1380DV33_CY7C1382DV33_18-MBIT_(512_K_X_36_1_M_X_18)_PIPELINED_SRAM_Datasheet-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec1488335f9 Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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S25FL512SDPBHBC10 S25FL512SDPBHBC10 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53 Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
на замовлення 551 шт:
термін постачання 21-31 дні (днів)
1+552.99 грн
10+495.12 грн
25+480.03 грн
50+439.79 грн
100+429.12 грн
338+410.63 грн
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IQFH61N06NM5ATMA1 IQFH61N06NM5ATMA1 Infineon Technologies Infineon-IQFH61N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e28fe8005b2 Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 510A (Tc)
Rds On (Max) @ Id, Vgs: 0.61mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 247µA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18100 pF @ 30 V
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IQFH61N06NM5ATMA1 IQFH61N06NM5ATMA1 Infineon Technologies Infineon-IQFH61N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e28fe8005b2 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 510A (Tc)
Rds On (Max) @ Id, Vgs: 0.61mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 247µA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18100 pF @ 30 V
на замовлення 230 шт:
термін постачання 21-31 дні (днів)
1+486.32 грн
10+316.86 грн
100+237.33 грн
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CY8C4126LDEHVS114AQLA1 CY8C4126LDEHVS114AQLA1 Infineon Technologies Infineon-CY8C41x5_CY8C41x6_PSOC_4_high_voltage_HV_mixed_signal_MS_Automotive_MCU_Based_on_32-bit_Arm_Cortex_-M0-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c956a0a470195817712a75d7a Description: PSOC BASED - HV FAMILY
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.15V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Grade: Automotive
Number of I/O: 33
Qualification: AEC-Q100
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CY25200K-ZXC004A Infineon Technologies Description: IC CLOCK GENERATOR
Packaging: Tube
DigiKey Programmable: Not Verified
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IMZC140R019M2HXKSA1 IMZC140R019M2HXKSA1 Infineon Technologies infineon-imzc140r019m2h-datasheet-en.pdf Description: IMZC140R019M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 40.4A, 18V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 12.7mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1400 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 1000 V
на замовлення 234 шт:
термін постачання 21-31 дні (днів)
1+1211.10 грн
30+721.47 грн
120+624.12 грн
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IMZC140R024M2HXKSA1 IMZC140R024M2HXKSA1 Infineon Technologies infineon-imzc140r024m2h-datasheet-en.pdf Description: IMZC140R024M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 32.1A, 18V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 10.1mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 1000 V
на замовлення 185 шт:
термін постачання 21-31 дні (днів)
1+1047.94 грн
30+616.18 грн
120+530.18 грн
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EB2ED24103D1BCSPTOBO1 EB2ED24103D1BCSPTOBO1 Infineon Technologies Description: EB 2ED2410 3D 1BCSP
Packaging: Bulk
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2ED2410-EM
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+7288.55 грн
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DD800S17K3_B2 Infineon Technologies DD800S17K3_B2.pdf Description: DIODE MODULE GEN PURP 1700V
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 800 A
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IMZA120R012M2HXKSA1 IMZA120R012M2HXKSA1 Infineon Technologies infineon-imza120r012m2h-datasheet-en.pdf?fileId=8ac78c8c9625080601968fde0d5f5dc5 Description: IMZA120R012M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 57A, 18V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 17.8mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 800 V
на замовлення 184 шт:
термін постачання 21-31 дні (днів)
1+1593.10 грн
30+980.66 грн
120+941.87 грн
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IM66D130MV01XTMA1 IM66D130MV01XTMA1 Infineon Technologies Description: IM66D130MV01XTMA1
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.118" L x 0.079" W (3.00mm x 2.00mm)
Sensitivity: -37dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.039" (0.98mm)
Voltage - Rated: 1.8 V
Current - Supply: 640 µA
Voltage Range: 1.6 V ~ 3.465 V
Frequency Range: 35 Hz
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IM66D130MV01XTMA1 IM66D130MV01XTMA1 Infineon Technologies Description: IM66D130MV01XTMA1
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.118" L x 0.079" W (3.00mm x 2.00mm)
Sensitivity: -37dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.039" (0.98mm)
Voltage - Rated: 1.8 V
Current - Supply: 640 µA
Voltage Range: 1.6 V ~ 3.465 V
Frequency Range: 35 Hz
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KITIM68D121JV01FLEXTOBO1 KITIM68D121JV01FLEXTOBO1 Infineon Technologies infineon-xensiv-sensor-solutions-product-selection-guide-en.pdf Description: KITIM68D121JV01FLEXTOBO1
Packaging: Box
Function: MEMS Omnidirectional Microphones
Type: Audio
Contents: Board(s)
Utilized IC / Part: IM68D121JV01
Secondary Attributes: Analog Output
Embedded: No
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+7112.85 грн
10+5364.64 грн
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IMDQ75R008M1HXUMA1 IMDQ75R008M1HXUMA1 Infineon Technologies Infineon-IMDQ75R008M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b6132fe9921f4 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
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IMDQ75R008M1HXUMA1 IMDQ75R008M1HXUMA1 Infineon Technologies Infineon-IMDQ75R008M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b6132fe9921f4 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
на замовлення 523 шт:
термін постачання 21-31 дні (днів)
1+2110.01 грн
10+1583.72 грн
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ISC025N06LM6ATMA1 ISC025N06LM6ATMA1 Infineon Technologies Infineon-ISC025N06LM6-DataSheet-v01_00-EN.pdf Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 38µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 30 V
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IRAMS06UP60A-2 IRAMS06UP60A-2 Infineon Technologies IRAMS06UP60A.pdf Description: IGBT IPM 600V 6A 23-PWRSIP MOD
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 6 A
Voltage: 600 V
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S26KS256SDGBHB030 S26KS256SDGBHB030 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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7GA830343H0 Infineon Technologies Description: IC MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
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CY8C29866-24AXIT CY8C29866-24AXIT Infineon Technologies Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra Description: IC MCU 8BIT 32KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 12x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 64
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1500+703.07 грн
Мінімальне замовлення: 1500
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CY8C4146AZE-S275T CY8C4146AZE-S275T Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 64KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CYAT81689-100AS71Z CYAT81689-100AS71Z Infineon Technologies CYAT8168x.pdf Description: TrueTouch
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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AIMBG75R025M2HXTMA1 AIMBG75R025M2HXTMA1 Infineon Technologies Description: AIMBG75R025M2HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 36.7A, 20V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 8.1mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1729 pF @ 500 V
Qualification: AEC-Q101
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AIMBG75R025M2HXTMA1 AIMBG75R025M2HXTMA1 Infineon Technologies Description: AIMBG75R025M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 36.7A, 20V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 8.1mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1729 pF @ 500 V
Qualification: AEC-Q101
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IMTA65R033M2HXTMA1 IMTA65R033M2HXTMA1 Infineon Technologies Infineon-IMTA65R033M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c93dda25b0194fb2d51436735 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerLSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-LHSOF-4-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 400 V
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IMTA65R033M2HXTMA1 IMTA65R033M2HXTMA1 Infineon Technologies Infineon-IMTA65R033M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c93dda25b0194fb2d51436735 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 4-PowerLSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-LHSOF-4-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 400 V
на замовлення 1791 шт:
термін постачання 21-31 дні (днів)
1+683.99 грн
10+451.01 грн
100+333.90 грн
500+308.53 грн
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TLE9018DQKXUMA1 TLE9018DQKXUMA1 Infineon Technologies infineon-tle9018dqk-datasheet-en.pdf Description: BATTERYMANAGEMENT_ICS
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Number of Cells: 18
Mounting Type: Surface Mount
Function: Multi-Function Controller
Battery Chemistry: Lithium Ion
Supplier Device Package: PG-LQFP-64-28
Grade: Automotive
Qualification: AEC-Q100
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TLE9018DQKXUMA1 TLE9018DQKXUMA1 Infineon Technologies infineon-tle9018dqk-datasheet-en.pdf Description: BATTERYMANAGEMENT_ICS
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Number of Cells: 18
Mounting Type: Surface Mount
Function: Multi-Function Controller
Battery Chemistry: Lithium Ion
Supplier Device Package: PG-LQFP-64-28
Grade: Automotive
Qualification: AEC-Q100
на замовлення 342 шт:
термін постачання 21-31 дні (днів)
1+677.71 грн
10+509.17 грн
25+473.33 грн
100+407.25 грн
250+389.64 грн
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TLI4971A030W2US0001XUMA1 infineon-tli4971-25-50-75-120-datasheet-en.pdf
TLI4971A030W2US0001XUMA1
Виробник: Infineon Technologies
Description: CURRENT SENS CONS & IND
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±1.7%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 30A
Grade: Automotive
Number of Channels: 1
Qualification: AEC-Q100
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TLI4971A030W2US0001XUMA1 infineon-tli4971-25-50-75-120-datasheet-en.pdf
TLI4971A030W2US0001XUMA1
Виробник: Infineon Technologies
Description: CURRENT SENS CONS & IND
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±1.7%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 30A
Grade: Automotive
Number of Channels: 1
Qualification: AEC-Q100
на замовлення 1495 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+308.27 грн
5+266.33 грн
10+254.93 грн
25+226.44 грн
50+217.69 грн
100+209.64 грн
500+190.31 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IR2102STRPBF IRSDS17613-1.pdf?t.download=true&u=5oefqw
IR2102STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
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IR2102STRPBF IRSDS17613-1.pdf?t.download=true&u=5oefqw
IR2102STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
на замовлення 55 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+96.48 грн
10+67.45 грн
25+61.18 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRS2124STRPBF fundamentals-of-power-semiconductors
IRS2124STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 80ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 500mA, 500mA
DigiKey Programmable: Not Verified
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IRS2124STRPBF fundamentals-of-power-semiconductors
IRS2124STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 80ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 500mA, 500mA
DigiKey Programmable: Not Verified
на замовлення 15908 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
185+110.43 грн
Мінімальне замовлення: 185
В кошику  од. на суму  грн.
FS410R12A7P1BHPSA1 infineon-fs410r12a7p1b-datasheet-en.pdf
FS410R12A7P1BHPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 300A HDG2XT-7611
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.58V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: AG-HDG2XT-7611
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 775 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 24600 pF @ 25 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+27266.17 грн
В кошику  од. на суму  грн.
BFP420FH6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFP420FH6327XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 5.5V 25GHZ 4-TSFP
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19.5dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: 4-TSFP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1682+12.11 грн
Мінімальне замовлення: 1682
В кошику  од. на суму  грн.
IRF6662TRPBF irf6662pbf.pdf?fileId=5546d462533600a4015355ec7edc1a5d
IRF6662TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 8.3A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.2A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V
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IRF6662TRPBF irf6662pbf.pdf?fileId=5546d462533600a4015355ec7edc1a5d
IRF6662TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 8.3A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.2A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V
на замовлення 457 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+214.14 грн
10+134.22 грн
100+93.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE9350BSJXTMA1 Infineon-TLE9350BSJ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018b66e2a1cc08e4
TLE9350BSJXTMA1
Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+34.40 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLE9350BSJXTMA1 Infineon-TLE9350BSJ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018b66e2a1cc08e4
TLE9350BSJXTMA1
Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3704 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+72.16 грн
10+49.93 грн
25+45.11 грн
100+37.32 грн
250+34.95 грн
500+33.51 грн
1000+31.81 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
AIMZA75R008M1HXKSA1 Infineon-AIMZA75R008M1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191b2c26c0f0e1f
AIMZA75R008M1HXKSA1
Виробник: Infineon Technologies
Description: AUTOMOTIVE_SICMOS
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 163A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 90.3A, 20V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 32.4mA
Supplier Device Package: PG-TO247-4-U02
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6137 pF @ 500 V
Qualification: AEC-Q101
на замовлення 198 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2401.80 грн
30+1529.58 грн
120+1522.38 грн
В кошику  од. на суму  грн.
AIMBG75R027M1HXTMA1 Infineon-AIMBG75R027M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef042d11327b2
AIMBG75R027M1HXTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 750V 64A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 8.8mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+503.23 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
AIMBG75R027M1HXTMA1 Infineon-AIMBG75R027M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef042d11327b2
AIMBG75R027M1HXTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 750V 64A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 8.8mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V
Qualification: AEC-Q101
на замовлення 1070 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+946.76 грн
10+660.92 грн
100+593.14 грн
В кошику  од. на суму  грн.
CYPD822952LQXITXUMA1 Infineon-EZ_PD_CCG8_CFP_USBC_Power_Delivery_controller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c93dda25b019505de8fdc3683
Виробник: Infineon Technologies
Description: USB-C PC
Packaging: Tape & Reel (TR)
Package / Case: 52-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB), ROM (96kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0+
Supplier Device Package: 52-QFN (5x8)
Number of I/O: 20
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CYPD822952LQXIXQLA1 Infineon-EZ_PD_CCG8_CFP_USBC_Power_Delivery_controller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c93dda25b019505de8fdc3683
Виробник: Infineon Technologies
Description: USB-C PC
Packaging: Tray
Package / Case: 52-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB), ROM (96kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0+
Supplier Device Package: 52-QFN (5x8)
Number of I/O: 20
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EVAL60UTR11WINGTOBO1 UM_KIT_CSK_BGT60UTR11AIP-Wingboard_Userguide-EN.pdf
EVAL60UTR11WINGTOBO1
Виробник: Infineon Technologies
Description: EVAL60UTR11WINGTOBO1
Packaging: Box
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1984.51 грн
В кошику  од. на суму  грн.
AIMCQ120R040M1TXTMA1 AIMCQ120R040M1T_v1.10_en.pdf
AIMCQ120R040M1TXTMA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 20V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 6.4mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1264 pF @ 800 V
Qualification: AEC-Q101
товару немає в наявності
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AIMCQ120R040M1TXTMA1 AIMCQ120R040M1T_v1.10_en.pdf
AIMCQ120R040M1TXTMA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 20V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 6.4mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1264 pF @ 800 V
Qualification: AEC-Q101
на замовлення 690 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+844.79 грн
10+567.56 грн
100+493.81 грн
В кошику  од. на суму  грн.
ISZ015N04NM7VATMA1 448_ISZ015N04NM7V.pdf
ISZ015N04NM7VATMA1
Виробник: Infineon Technologies
Description: ISZ015N04NM7VATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 177A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 36µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+33.08 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
ISZ015N04NM7VATMA1 448_ISZ015N04NM7V.pdf
ISZ015N04NM7VATMA1
Виробник: Infineon Technologies
Description: ISZ015N04NM7VATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 177A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 36µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
на замовлення 6894 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+127.07 грн
10+77.80 грн
100+52.40 грн
500+38.95 грн
1000+36.02 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CY8C20566-24PVXI
CY8C20566-24PVXI
Виробник: Infineon Technologies
Description: IC MCU 32K FLASH 2K SRAM 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6
Program Memory Type: FLASH (32kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-SSOP
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 1050 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+374.94 грн
10+276.23 грн
30+251.35 грн
120+215.07 грн
270+206.16 грн
510+200.46 грн
1020+192.11 грн
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EVINVHPD2SICFS0108TOBO2
Виробник: Infineon Technologies
Description: OTHER
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: FS01MR08A8MA2
Embedded: No
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+405027.48 грн
В кошику  од. на суму  грн.
EVINVHPD2SICFS0212TOBO1
Виробник: Infineon Technologies
Description: OTHER
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: FS02MR12A8MA2
Embedded: No
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CY7C1354DV25-200BZI
CY7C1354DV25-200BZI
Виробник: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.2 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
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CY7C1470BV25-200BZI CY7C1470%2C72%2C74BV25.pdf
CY7C1470BV25-200BZI
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY7C1312BV18-200BZI CY7C1310%2C12%2C14%2C1914BV18.pdf
CY7C1312BV18-200BZI
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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CY7C1415AV18-200BZI CY7C1411%2C13%2C15%2C26AV18.pdf
CY7C1415AV18-200BZI
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1414BV18-200BZI CY7C1412%2C14BV18.pdf
CY7C1414BV18-200BZI
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1470BV33-200BZI download
CY7C1470BV33-200BZI
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY7C1380DV33-200BZI Infineon-CY7C1380DV33_CY7C1382DV33_18-MBIT_(512_K_X_36_1_M_X_18)_PIPELINED_SRAM_Datasheet-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec1488335f9
CY7C1380DV33-200BZI
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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S25FL512SDPBHBC10 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53
S25FL512SDPBHBC10
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
на замовлення 551 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+552.99 грн
10+495.12 грн
25+480.03 грн
50+439.79 грн
100+429.12 грн
338+410.63 грн
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IQFH61N06NM5ATMA1 Infineon-IQFH61N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e28fe8005b2
IQFH61N06NM5ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 510A (Tc)
Rds On (Max) @ Id, Vgs: 0.61mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 247µA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18100 pF @ 30 V
товару немає в наявності
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IQFH61N06NM5ATMA1 Infineon-IQFH61N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e28fe8005b2
IQFH61N06NM5ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 510A (Tc)
Rds On (Max) @ Id, Vgs: 0.61mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 247µA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18100 pF @ 30 V
на замовлення 230 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+486.32 грн
10+316.86 грн
100+237.33 грн
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CY8C4126LDEHVS114AQLA1 Infineon-CY8C41x5_CY8C41x6_PSOC_4_high_voltage_HV_mixed_signal_MS_Automotive_MCU_Based_on_32-bit_Arm_Cortex_-M0-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c956a0a470195817712a75d7a
CY8C4126LDEHVS114AQLA1
Виробник: Infineon Technologies
Description: PSOC BASED - HV FAMILY
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.15V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Grade: Automotive
Number of I/O: 33
Qualification: AEC-Q100
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CY25200K-ZXC004A
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR
Packaging: Tube
DigiKey Programmable: Not Verified
товару немає в наявності
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IMZC140R019M2HXKSA1 infineon-imzc140r019m2h-datasheet-en.pdf
IMZC140R019M2HXKSA1
Виробник: Infineon Technologies
Description: IMZC140R019M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 40.4A, 18V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 12.7mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1400 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 1000 V
на замовлення 234 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1211.10 грн
30+721.47 грн
120+624.12 грн
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IMZC140R024M2HXKSA1 infineon-imzc140r024m2h-datasheet-en.pdf
IMZC140R024M2HXKSA1
Виробник: Infineon Technologies
Description: IMZC140R024M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 32.1A, 18V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 10.1mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 1000 V
на замовлення 185 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1047.94 грн
30+616.18 грн
120+530.18 грн
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EB2ED24103D1BCSPTOBO1
EB2ED24103D1BCSPTOBO1
Виробник: Infineon Technologies
Description: EB 2ED2410 3D 1BCSP
Packaging: Bulk
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2ED2410-EM
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7288.55 грн
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DD800S17K3_B2 DD800S17K3_B2.pdf
Виробник: Infineon Technologies
Description: DIODE MODULE GEN PURP 1700V
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 800 A
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IMZA120R012M2HXKSA1 infineon-imza120r012m2h-datasheet-en.pdf?fileId=8ac78c8c9625080601968fde0d5f5dc5
IMZA120R012M2HXKSA1
Виробник: Infineon Technologies
Description: IMZA120R012M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 57A, 18V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 17.8mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 800 V
на замовлення 184 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1593.10 грн
30+980.66 грн
120+941.87 грн
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IM66D130MV01XTMA1
IM66D130MV01XTMA1
Виробник: Infineon Technologies
Description: IM66D130MV01XTMA1
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.118" L x 0.079" W (3.00mm x 2.00mm)
Sensitivity: -37dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.039" (0.98mm)
Voltage - Rated: 1.8 V
Current - Supply: 640 µA
Voltage Range: 1.6 V ~ 3.465 V
Frequency Range: 35 Hz
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IM66D130MV01XTMA1
IM66D130MV01XTMA1
Виробник: Infineon Technologies
Description: IM66D130MV01XTMA1
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.118" L x 0.079" W (3.00mm x 2.00mm)
Sensitivity: -37dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.039" (0.98mm)
Voltage - Rated: 1.8 V
Current - Supply: 640 µA
Voltage Range: 1.6 V ~ 3.465 V
Frequency Range: 35 Hz
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KITIM68D121JV01FLEXTOBO1 infineon-xensiv-sensor-solutions-product-selection-guide-en.pdf
KITIM68D121JV01FLEXTOBO1
Виробник: Infineon Technologies
Description: KITIM68D121JV01FLEXTOBO1
Packaging: Box
Function: MEMS Omnidirectional Microphones
Type: Audio
Contents: Board(s)
Utilized IC / Part: IM68D121JV01
Secondary Attributes: Analog Output
Embedded: No
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7112.85 грн
10+5364.64 грн
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IMDQ75R008M1HXUMA1 Infineon-IMDQ75R008M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b6132fe9921f4
IMDQ75R008M1HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
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IMDQ75R008M1HXUMA1 Infineon-IMDQ75R008M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b6132fe9921f4
IMDQ75R008M1HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
на замовлення 523 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2110.01 грн
10+1583.72 грн
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ISC025N06LM6ATMA1 Infineon-ISC025N06LM6-DataSheet-v01_00-EN.pdf
ISC025N06LM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 38µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 30 V
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IRAMS06UP60A-2 IRAMS06UP60A.pdf
IRAMS06UP60A-2
Виробник: Infineon Technologies
Description: IGBT IPM 600V 6A 23-PWRSIP MOD
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 6 A
Voltage: 600 V
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S26KS256SDGBHB030 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f
S26KS256SDGBHB030
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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7GA830343H0
Виробник: Infineon Technologies
Description: IC MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
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CY8C29866-24AXIT Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra
CY8C29866-24AXIT
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 12x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 64
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+703.07 грн
Мінімальне замовлення: 1500
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CY8C4146AZE-S275T Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4146AZE-S275T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CYAT81689-100AS71Z CYAT8168x.pdf
CYAT81689-100AS71Z
Виробник: Infineon Technologies
Description: TrueTouch
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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AIMBG75R025M2HXTMA1
AIMBG75R025M2HXTMA1
Виробник: Infineon Technologies
Description: AIMBG75R025M2HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 36.7A, 20V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 8.1mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1729 pF @ 500 V
Qualification: AEC-Q101
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AIMBG75R025M2HXTMA1
AIMBG75R025M2HXTMA1
Виробник: Infineon Technologies
Description: AIMBG75R025M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 36.7A, 20V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 8.1mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1729 pF @ 500 V
Qualification: AEC-Q101
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IMTA65R033M2HXTMA1 Infineon-IMTA65R033M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c93dda25b0194fb2d51436735
IMTA65R033M2HXTMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerLSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-LHSOF-4-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 400 V
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IMTA65R033M2HXTMA1 Infineon-IMTA65R033M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c93dda25b0194fb2d51436735
IMTA65R033M2HXTMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 4-PowerLSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-LHSOF-4-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 400 V
на замовлення 1791 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+683.99 грн
10+451.01 грн
100+333.90 грн
500+308.53 грн
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TLE9018DQKXUMA1 infineon-tle9018dqk-datasheet-en.pdf
TLE9018DQKXUMA1
Виробник: Infineon Technologies
Description: BATTERYMANAGEMENT_ICS
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Number of Cells: 18
Mounting Type: Surface Mount
Function: Multi-Function Controller
Battery Chemistry: Lithium Ion
Supplier Device Package: PG-LQFP-64-28
Grade: Automotive
Qualification: AEC-Q100
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TLE9018DQKXUMA1 infineon-tle9018dqk-datasheet-en.pdf
TLE9018DQKXUMA1
Виробник: Infineon Technologies
Description: BATTERYMANAGEMENT_ICS
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Number of Cells: 18
Mounting Type: Surface Mount
Function: Multi-Function Controller
Battery Chemistry: Lithium Ion
Supplier Device Package: PG-LQFP-64-28
Grade: Automotive
Qualification: AEC-Q100
на замовлення 342 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+677.71 грн
10+509.17 грн
25+473.33 грн
100+407.25 грн
250+389.64 грн
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