Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (119460) > Сторінка 766 з 1991

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TLE95633QXWJXUMA1 Infineon Technologies Description: BLDC_MOTOR_CONTROL
Packaging: Tape & Reel (TR)
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IRFBL3315 IRFBL3315 Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH 150V 21A SUPER D2PAK
Packaging: Tube
Package / Case: Super D2-Pak
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Supplier Device Package: Super D2-Pak
Drain to Source Voltage (Vdss): 150 V
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TDA22561XUMA1 Infineon Technologies Description: POWERSTAGE CE
Packaging: Tape & Reel (TR)
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CY7C1361C-100AXC CY7C1361C-100AXC Infineon Technologies Infineon-CY7C1361C_CY7C1363C_9-Mbit_(256_K_36_512_K_18)_Flow-Through_SRAM-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdc53d30a8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Description: IC SRAM 9MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
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FF06MR12A04MA2AKSA1 FF06MR12A04MA2AKSA1 Infineon Technologies infineon-ff06mr12a04ma2-datasheet-en.pdf Description: HYBRIDPACK DSC S MODULE WITH SIC
Packaging: Tube
Package / Case: 11-PowerDIP Module (2.091", 53.10mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 190A
Input Capacitance (Ciss) (Max) @ Vds: 10100pF @ 850V
Rds On (Max) @ Id, Vgs: 5.56mOhm @ 190A, 18V
Gate Charge (Qg) (Max) @ Vgs: 420nC @ 18V
Vgs(th) (Max) @ Id: 4.55V @ 60mA
Supplier Device Package: PG-MDIP-11-1
Grade: Automotive
Qualification: AEC-Q101
на замовлення 101 шт:
термін постачання 21-31 дні (днів)
1+10751.60 грн
12+8686.34 грн
36+8247.76 грн
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IPB65R420CFDATMA1 IPB65R420CFDATMA1 Infineon Technologies IPx65R420CFD.pdf Description: MOSFET N-CH 650V 8.7A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
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CYT3DLABABQ1AESGS CYT3DLABABQ1AESGS Infineon Technologies Infineon-CYT3DL_TRAVEO_TM_T2G_32-BIT_AUTOMOTIVE_MCU_BASED_ON_ARM_R_CORTEX_R_-M7_SINGLE-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c869190210186f0ccf72f3fd3 Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 108
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CYT4DNJBACQ1BZSGS CYT4DNJBACQ1BZSGS Infineon Technologies Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0 Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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CYT4DNJBACQ1BZSGST CYT4DNJBACQ1BZSGST Infineon Technologies Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0 Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tape & Reel (TR)
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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CYT4DNJBBCQ1BZSGS CYT4DNJBBCQ1BZSGS Infineon Technologies Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0 Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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CYT4DNJBBCQ1BZSGST CYT4DNJBBCQ1BZSGST Infineon Technologies Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0 Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tape & Reel (TR)
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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CYT4DNJBGCQ1BZSGS CYT4DNJBGCQ1BZSGS Infineon Technologies Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0 Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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CYT4DNJBFCQ1BZSGS CYT4DNJBFCQ1BZSGS Infineon Technologies Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0 Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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CYT4DNJBDCQ1BZSGS CYT4DNJBDCQ1BZSGS Infineon Technologies Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0 Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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XMC1201Q040F0200ABXTMA1 XMC1201Q040F0200ABXTMA1 Infineon Technologies Infineon-xmc1200_AB-DataSheet-v01_09-EN.pdf?fileId=5546d4624a0bf290014a4bdaf60925b0 Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 35
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XMC1302Q040X0200ABXTMA1 XMC1302Q040X0200ABXTMA1 Infineon Technologies Infineon-xmc1300_AB-DataSheet-v02_01-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6 Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 34
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XMC1403Q040X0200AAXTMA1 XMC1403Q040X0200AAXTMA1 Infineon Technologies Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 27
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XMC1404Q048X0200AAXTMA1 XMC1404Q048X0200AAXTMA1 Infineon Technologies Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Number of I/O: 34
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XMC1403Q064X0200AAXTMA1 XMC1403Q064X0200AAXTMA1 Infineon Technologies Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-64-6
Number of I/O: 48
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XMC1404Q064X0200AAXTMA1 XMC1404Q064X0200AAXTMA1 Infineon Technologies Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-64-6
Number of I/O: 48
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XMC1404Q040X0200AAXTMA1 XMC1404Q040X0200AAXTMA1 Infineon Technologies Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 27
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XMC1402Q040X0200AAXTMA1 XMC1402Q040X0200AAXTMA1 Infineon Technologies Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 27
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CYW20733A3KFB1GT CYW20733A3KFB1GT Infineon Technologies CYW20733_RevS_11-9-17.pdf Description: IC RF TXRX+MCU BLE 81FBGA
Packaging: Cut Tape (CT)
Package / Case: 81-TFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V
Power - Output: 10dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.4mA
Current - Transmitting: 47mA
Supplier Device Package: 81-FBGA (8x8)
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2+277.73 грн
10+230.98 грн
25+218.38 грн
100+188.69 грн
250+178.95 грн
500+172.07 грн
1000+162.87 грн
Мінімальне замовлення: 2
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IMWH170R450M1XKSA1 IMWH170R450M1XKSA1 Infineon Technologies Infineon-IMWH170R450M1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1a6bedb61513 Description: IMWH170R450M1XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tj)
Rds On (Max) @ Id, Vgs: 390mOhm @ 2A, 15V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.6mA
Supplier Device Package: PG-TO247-3-U04
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): 15V, 12V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 506 pF @ 1000 V
на замовлення 264 шт:
термін постачання 21-31 дні (днів)
1+480.35 грн
30+295.52 грн
120+263.86 грн
В кошику  од. на суму  грн.
TC277T64F200SDCLXUMA2 TC277T64F200SDCLXUMA2 Infineon Technologies Infineon-TC27x_DS_Addendum-DataSheet-v01_10-EN.pdf?fileId=5546d4627883d7e00178b64a0d244053 Description: AURIX 1G-PSE
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit 5-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
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TC397XP256F300SBDKXUMA2 TC397XP256F300SBDKXUMA2 Infineon Technologies Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.52M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit 10-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
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TC397XP256F300SBDKXUMA2 TC397XP256F300SBDKXUMA2 Infineon Technologies Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.52M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit 10-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
на замовлення 777 шт:
термін постачання 21-31 дні (днів)
1+4363.85 грн
10+3477.95 грн
25+3297.08 грн
100+2907.72 грн
В кошику  од. на суму  грн.
IGL65R140D2XUMA1 IGL65R140D2XUMA1 Infineon Technologies 448_IGL65R140D2.pdf Description: IGL65R140D2XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 400 V
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IGL65R140D2XUMA1 IGL65R140D2XUMA1 Infineon Technologies 448_IGL65R140D2.pdf Description: IGL65R140D2XUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 400 V
на замовлення 2945 шт:
термін постачання 21-31 дні (днів)
2+246.43 грн
10+155.27 грн
100+108.70 грн
500+90.00 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IGL65R110D2XUMA1 IGL65R110D2XUMA1 Infineon Technologies 448_IGL65R110D2.pdf Description: IGL65R110D2XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
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IGL65R110D2XUMA1 IGL65R110D2XUMA1 Infineon Technologies 448_IGL65R110D2.pdf Description: IGL65R110D2XUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
2+291.81 грн
10+185.18 грн
100+133.90 грн
500+112.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IGL65R080D2XUMA1 IGL65R080D2XUMA1 Infineon Technologies 448_IGL65R080D2.pdf Description: IGL65R080D2XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.8mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V
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IGL65R080D2XUMA1 IGL65R080D2XUMA1 Infineon Technologies 448_IGL65R080D2.pdf Description: IGL65R080D2XUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.8mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V
на замовлення 2884 шт:
термін постачання 21-31 дні (днів)
1+370.04 грн
10+237.68 грн
100+170.39 грн
500+155.00 грн
В кошику  од. на суму  грн.
IGL65R055D2XUMA1 IGL65R055D2XUMA1 Infineon Technologies infineon-igl65r055d2-datasheet-en.pdf Description: GANFET N-CH 650V 22A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.9A
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
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IGL65R055D2XUMA1 IGL65R055D2XUMA1 Infineon Technologies infineon-igl65r055d2-datasheet-en.pdf Description: GANFET N-CH 650V 22A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.9A
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
на замовлення 1526 шт:
термін постачання 21-31 дні (днів)
1+468.62 грн
10+303.83 грн
100+220.22 грн
500+194.85 грн
В кошику  од. на суму  грн.
IPW65R040CM8XKSA1 IPW65R040CM8XKSA1 Infineon Technologies Infineon-IPW65R040CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c96250806019626d9b8a060d2 Description: IPW65R040CM8XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3796 pF @ 400 V
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
1+551.54 грн
30+309.88 грн
120+261.28 грн
В кошику  од. на суму  грн.
S25FL512SDSBHVC13 S25FL512SDSBHVC13 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53 Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
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IRG4PC30FPBF IRG4PC30FPBF Infineon Technologies IRSDS10266-1.pdf?t.download=true&u=5oefqw Description: IGBT
Packaging: Bulk
на замовлення 1002 шт:
термін постачання 21-31 дні (днів)
140+142.29 грн
Мінімальне замовлення: 140
В кошику  од. на суму  грн.
KP219F1804XTMA1 Infineon Technologies Infineon-KP219F1804-DataSheet-v01_00-EN.pdf Description: INTEGRATED PRESSURE SENS
Packaging: Tape & Reel (TR)
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CY7C1370KV25-167BZI CY7C1370KV25-167BZI Infineon Technologies download Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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PEF24470HV1.3 PEF24470HV1.3 Infineon Technologies Description: MTSI-XL SWITCHING
Packaging: Bulk
на замовлення 1560 шт:
термін постачання 21-31 дні (днів)
4+4574.10 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
1EDI303YASEVALBOARDTOBO1 1EDI303YASEVALBOARDTOBO1 Infineon Technologies Infineon-1EDI3035-1EDI3038AS-demoboard-UserManual-v01_40-EN.pdf?fileId=8ac78c8c90530b3a01910fe599d86a82 Description: EVAL BOARD FOR 1EDI3035AS
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Primary Attributes: Isolated
Secondary Attributes: On-Board LEDs
Embedded: No
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+10155.46 грн
В кошику  од. на суму  грн.
FZ1400R33HE4BPSA1 FZ1400R33HE4BPSA1 Infineon Technologies Infineon-Bodos_Power_Systems_Modules%20for_traction_converters-Article-v01_00-EN.pdf?fileId=5546d46269e1c019016a96de3a714ec0 Description: IGBT MODULE 3300V 1400A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1400A (Typ)
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1400 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 187 nF @ 25 V
на замовлення 54 шт:
термін постачання 21-31 дні (днів)
1+96119.76 грн
В кошику  од. на суму  грн.
IRF7483MTRPBF IRF7483MTRPBF Infineon Technologies IRSD-S-A0001021909-1.pdf?t.download=true&u=5oefqw Description: IRF7483 - 12V-300V N-CHANNEL POW
Packaging: Bulk
Package / Case: DirectFET™ Isometric MF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 81A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: DirectFET™ Isometric MF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3913 pF @ 25 V
на замовлення 3799 шт:
термін постачання 21-31 дні (днів)
205+98.65 грн
Мінімальне замовлення: 205
В кошику  од. на суму  грн.
CY9BF416RPMC-G-JNE1 CY9BF416RPMC-G-JNE1 Infineon Technologies download Description: IC MCU 32BIT 512KB 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 103
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CY9BF416RPMC-GE1 CY9BF416RPMC-GE1 Infineon Technologies download Description: IC MCU 32BIT 512KB 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 103
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GS0650186LRMRXUSA1 GS0650186LRMRXUSA1 Infineon Technologies Infineon-GS-065-018-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e40492dec Description: GS-065-018-6-LR-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
250+210.94 грн
Мінімальне замовлення: 250
В кошику  од. на суму  грн.
GS0650186LRMRXUSA1 GS0650186LRMRXUSA1 Infineon Technologies Infineon-GS-065-018-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e40492dec Description: GS-065-018-6-LR-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
на замовлення 412 шт:
термін постачання 21-31 дні (днів)
1+475.66 грн
10+309.40 грн
100+225.28 грн
В кошику  од. на суму  грн.
GS0650116LRMRXUSA1 GS0650116LRMRXUSA1 Infineon Technologies Infineon-GS-065-011-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e3a3d2de6 Description: GS-065-011-6-LR-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
250+143.09 грн
Мінімальне замовлення: 250
В кошику  од. на суму  грн.
GS0650116LRMRXUSA1 GS0650116LRMRXUSA1 Infineon Technologies Infineon-GS-065-011-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e3a3d2de6 Description: GS-065-011-6-LR-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
на замовлення 496 шт:
термін постачання 21-31 дні (днів)
1+337.97 грн
10+216.21 грн
100+154.16 грн
В кошику  од. на суму  грн.
GS0650146LRMRXUSA1 GS0650146LRMRXUSA1 Infineon Technologies Infineon-GS-065-014-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e3d512de9 Description: GS-065-014-6-LR-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 3mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
250+171.46 грн
Мінімальне замовлення: 250
В кошику  од. на суму  грн.
GS0650146LRMRXUSA1 GS0650146LRMRXUSA1 Infineon Technologies Infineon-GS-065-014-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e3d512de9 Description: GS-065-014-6-LR-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 3mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V
на замовлення 437 шт:
термін постачання 21-31 дні (днів)
1+396.64 грн
10+255.54 грн
100+183.97 грн
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GS0650306LRMRXUSA1 GS0650306LRMRXUSA1 Infineon Technologies Infineon-GS-065-030-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e5d762df9 Description: GS-065-030-6-LR-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
250+366.38 грн
500+331.64 грн
750+330.64 грн
Мінімальне замовлення: 250
В кошику  од. на суму  грн.
GS0650306LRMRXUSA1 GS0650306LRMRXUSA1 Infineon Technologies Infineon-GS-065-030-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e5d762df9 Description: GS-065-030-6-LR-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
на замовлення 895 шт:
термін постачання 21-31 дні (днів)
1+776.86 грн
10+517.41 грн
100+404.70 грн
В кошику  од. на суму  грн.
SKB02N60E3266ATMA1 SKB02N60E3266ATMA1 Infineon Technologies SKB02N60.pdf Description: IGBT NPT 600V 6A TO263-3-2
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/259ns
Switching Energy: 64µJ
Test Condition: 400V, 2A, 118Ohm, 15V
Gate Charge: 14 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 30 W
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
315+63.75 грн
Мінімальне замовлення: 315
В кошику  од. на суму  грн.
SKB02N60ATMA1 SKB02N60ATMA1 Infineon Technologies SKB02N60.pdf Description: IGBT NPT 600V 6A TO263-3-2
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/259ns
Switching Energy: 64µJ
Test Condition: 400V, 2A, 118Ohm, 15V
Gate Charge: 14 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 30 W
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)
289+69.79 грн
Мінімальне замовлення: 289
В кошику  од. на суму  грн.
GS66516TMRXUSA1 GS66516TMRXUSA1 Infineon Technologies Description: GS66516T-MR
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
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GS66516TMRXUSA1 GS66516TMRXUSA1 Infineon Technologies Description: GS66516T-MR
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
товару немає в наявності
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GS66516TTRXUMA1 GS66516TTRXUMA1 Infineon Technologies Infineon-GS66516T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e5161d33153ea Description: GS66516T-TR
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
товару немає в наявності
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GS66516TTRXUMA1 GS66516TTRXUMA1 Infineon Technologies Infineon-GS66516T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e5161d33153ea Description: GS66516T-TR
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
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TLE95633QXWJXUMA1
Виробник: Infineon Technologies
Description: BLDC_MOTOR_CONTROL
Packaging: Tape & Reel (TR)
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IRFBL3315 IR_PartNumberingSystem.pdf
IRFBL3315
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 21A SUPER D2PAK
Packaging: Tube
Package / Case: Super D2-Pak
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Supplier Device Package: Super D2-Pak
Drain to Source Voltage (Vdss): 150 V
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TDA22561XUMA1
Виробник: Infineon Technologies
Description: POWERSTAGE CE
Packaging: Tape & Reel (TR)
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CY7C1361C-100AXC Infineon-CY7C1361C_CY7C1363C_9-Mbit_(256_K_36_512_K_18)_Flow-Through_SRAM-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdc53d30a8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
CY7C1361C-100AXC
Виробник: Infineon Technologies
Description: IC SRAM 9MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
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FF06MR12A04MA2AKSA1 infineon-ff06mr12a04ma2-datasheet-en.pdf
FF06MR12A04MA2AKSA1
Виробник: Infineon Technologies
Description: HYBRIDPACK DSC S MODULE WITH SIC
Packaging: Tube
Package / Case: 11-PowerDIP Module (2.091", 53.10mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 190A
Input Capacitance (Ciss) (Max) @ Vds: 10100pF @ 850V
Rds On (Max) @ Id, Vgs: 5.56mOhm @ 190A, 18V
Gate Charge (Qg) (Max) @ Vgs: 420nC @ 18V
Vgs(th) (Max) @ Id: 4.55V @ 60mA
Supplier Device Package: PG-MDIP-11-1
Grade: Automotive
Qualification: AEC-Q101
на замовлення 101 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+10751.60 грн
12+8686.34 грн
36+8247.76 грн
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IPB65R420CFDATMA1 IPx65R420CFD.pdf
IPB65R420CFDATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 8.7A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
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CYT3DLABABQ1AESGS Infineon-CYT3DL_TRAVEO_TM_T2G_32-BIT_AUTOMOTIVE_MCU_BASED_ON_ARM_R_CORTEX_R_-M7_SINGLE-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c869190210186f0ccf72f3fd3
CYT3DLABABQ1AESGS
Виробник: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 108
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CYT4DNJBACQ1BZSGS Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0
CYT4DNJBACQ1BZSGS
Виробник: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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CYT4DNJBACQ1BZSGST Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0
CYT4DNJBACQ1BZSGST
Виробник: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tape & Reel (TR)
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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CYT4DNJBBCQ1BZSGS Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0
CYT4DNJBBCQ1BZSGS
Виробник: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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CYT4DNJBBCQ1BZSGST Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0
CYT4DNJBBCQ1BZSGST
Виробник: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tape & Reel (TR)
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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CYT4DNJBGCQ1BZSGS Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0
CYT4DNJBGCQ1BZSGS
Виробник: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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CYT4DNJBFCQ1BZSGS Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0
CYT4DNJBFCQ1BZSGS
Виробник: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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CYT4DNJBDCQ1BZSGS Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0
CYT4DNJBDCQ1BZSGS
Виробник: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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XMC1201Q040F0200ABXTMA1 Infineon-xmc1200_AB-DataSheet-v01_09-EN.pdf?fileId=5546d4624a0bf290014a4bdaf60925b0
XMC1201Q040F0200ABXTMA1
Виробник: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 35
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XMC1302Q040X0200ABXTMA1 Infineon-xmc1300_AB-DataSheet-v02_01-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6
XMC1302Q040X0200ABXTMA1
Виробник: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 34
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XMC1403Q040X0200AAXTMA1 Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1403Q040X0200AAXTMA1
Виробник: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 27
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XMC1404Q048X0200AAXTMA1 Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1404Q048X0200AAXTMA1
Виробник: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Number of I/O: 34
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XMC1403Q064X0200AAXTMA1 Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1403Q064X0200AAXTMA1
Виробник: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-64-6
Number of I/O: 48
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XMC1404Q064X0200AAXTMA1 Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1404Q064X0200AAXTMA1
Виробник: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-64-6
Number of I/O: 48
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XMC1404Q040X0200AAXTMA1 Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1404Q040X0200AAXTMA1
Виробник: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 27
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XMC1402Q040X0200AAXTMA1 Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1402Q040X0200AAXTMA1
Виробник: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 27
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CYW20733A3KFB1GT CYW20733_RevS_11-9-17.pdf
CYW20733A3KFB1GT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 81FBGA
Packaging: Cut Tape (CT)
Package / Case: 81-TFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V
Power - Output: 10dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.4mA
Current - Transmitting: 47mA
Supplier Device Package: 81-FBGA (8x8)
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+277.73 грн
10+230.98 грн
25+218.38 грн
100+188.69 грн
250+178.95 грн
500+172.07 грн
1000+162.87 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IMWH170R450M1XKSA1 Infineon-IMWH170R450M1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1a6bedb61513
IMWH170R450M1XKSA1
Виробник: Infineon Technologies
Description: IMWH170R450M1XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tj)
Rds On (Max) @ Id, Vgs: 390mOhm @ 2A, 15V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.6mA
Supplier Device Package: PG-TO247-3-U04
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): 15V, 12V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 506 pF @ 1000 V
на замовлення 264 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+480.35 грн
30+295.52 грн
120+263.86 грн
В кошику  од. на суму  грн.
TC277T64F200SDCLXUMA2 Infineon-TC27x_DS_Addendum-DataSheet-v01_10-EN.pdf?fileId=5546d4627883d7e00178b64a0d244053
TC277T64F200SDCLXUMA2
Виробник: Infineon Technologies
Description: AURIX 1G-PSE
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit 5-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
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TC397XP256F300SBDKXUMA2 Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f
TC397XP256F300SBDKXUMA2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.52M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit 10-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
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В кошику  од. на суму  грн.
TC397XP256F300SBDKXUMA2 Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f
TC397XP256F300SBDKXUMA2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.52M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit 10-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
на замовлення 777 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4363.85 грн
10+3477.95 грн
25+3297.08 грн
100+2907.72 грн
В кошику  од. на суму  грн.
IGL65R140D2XUMA1 448_IGL65R140D2.pdf
IGL65R140D2XUMA1
Виробник: Infineon Technologies
Description: IGL65R140D2XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 400 V
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IGL65R140D2XUMA1 448_IGL65R140D2.pdf
IGL65R140D2XUMA1
Виробник: Infineon Technologies
Description: IGL65R140D2XUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 400 V
на замовлення 2945 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+246.43 грн
10+155.27 грн
100+108.70 грн
500+90.00 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IGL65R110D2XUMA1 448_IGL65R110D2.pdf
IGL65R110D2XUMA1
Виробник: Infineon Technologies
Description: IGL65R110D2XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IGL65R110D2XUMA1 448_IGL65R110D2.pdf
IGL65R110D2XUMA1
Виробник: Infineon Technologies
Description: IGL65R110D2XUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+291.81 грн
10+185.18 грн
100+133.90 грн
500+112.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IGL65R080D2XUMA1 448_IGL65R080D2.pdf
IGL65R080D2XUMA1
Виробник: Infineon Technologies
Description: IGL65R080D2XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.8mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V
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IGL65R080D2XUMA1 448_IGL65R080D2.pdf
IGL65R080D2XUMA1
Виробник: Infineon Technologies
Description: IGL65R080D2XUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.8mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V
на замовлення 2884 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+370.04 грн
10+237.68 грн
100+170.39 грн
500+155.00 грн
В кошику  од. на суму  грн.
IGL65R055D2XUMA1 infineon-igl65r055d2-datasheet-en.pdf
IGL65R055D2XUMA1
Виробник: Infineon Technologies
Description: GANFET N-CH 650V 22A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.9A
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
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IGL65R055D2XUMA1 infineon-igl65r055d2-datasheet-en.pdf
IGL65R055D2XUMA1
Виробник: Infineon Technologies
Description: GANFET N-CH 650V 22A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.9A
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
на замовлення 1526 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+468.62 грн
10+303.83 грн
100+220.22 грн
500+194.85 грн
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IPW65R040CM8XKSA1 Infineon-IPW65R040CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c96250806019626d9b8a060d2
IPW65R040CM8XKSA1
Виробник: Infineon Technologies
Description: IPW65R040CM8XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3796 pF @ 400 V
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+551.54 грн
30+309.88 грн
120+261.28 грн
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S25FL512SDSBHVC13 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53
S25FL512SDSBHVC13
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
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IRG4PC30FPBF IRSDS10266-1.pdf?t.download=true&u=5oefqw
IRG4PC30FPBF
Виробник: Infineon Technologies
Description: IGBT
Packaging: Bulk
на замовлення 1002 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
140+142.29 грн
Мінімальне замовлення: 140
В кошику  од. на суму  грн.
KP219F1804XTMA1 Infineon-KP219F1804-DataSheet-v01_00-EN.pdf
Виробник: Infineon Technologies
Description: INTEGRATED PRESSURE SENS
Packaging: Tape & Reel (TR)
товару немає в наявності
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CY7C1370KV25-167BZI download
CY7C1370KV25-167BZI
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
товару немає в наявності
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PEF24470HV1.3
PEF24470HV1.3
Виробник: Infineon Technologies
Description: MTSI-XL SWITCHING
Packaging: Bulk
на замовлення 1560 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+4574.10 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
1EDI303YASEVALBOARDTOBO1 Infineon-1EDI3035-1EDI3038AS-demoboard-UserManual-v01_40-EN.pdf?fileId=8ac78c8c90530b3a01910fe599d86a82
1EDI303YASEVALBOARDTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR 1EDI3035AS
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Primary Attributes: Isolated
Secondary Attributes: On-Board LEDs
Embedded: No
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+10155.46 грн
В кошику  од. на суму  грн.
FZ1400R33HE4BPSA1 Infineon-Bodos_Power_Systems_Modules%20for_traction_converters-Article-v01_00-EN.pdf?fileId=5546d46269e1c019016a96de3a714ec0
FZ1400R33HE4BPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 3300V 1400A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1400A (Typ)
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1400 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 187 nF @ 25 V
на замовлення 54 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+96119.76 грн
В кошику  од. на суму  грн.
IRF7483MTRPBF IRSD-S-A0001021909-1.pdf?t.download=true&u=5oefqw
IRF7483MTRPBF
Виробник: Infineon Technologies
Description: IRF7483 - 12V-300V N-CHANNEL POW
Packaging: Bulk
Package / Case: DirectFET™ Isometric MF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 81A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: DirectFET™ Isometric MF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3913 pF @ 25 V
на замовлення 3799 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
205+98.65 грн
Мінімальне замовлення: 205
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CY9BF416RPMC-G-JNE1 download
CY9BF416RPMC-G-JNE1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 103
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CY9BF416RPMC-GE1 download
CY9BF416RPMC-GE1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 103
товару немає в наявності
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GS0650186LRMRXUSA1 Infineon-GS-065-018-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e40492dec
GS0650186LRMRXUSA1
Виробник: Infineon Technologies
Description: GS-065-018-6-LR-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
250+210.94 грн
Мінімальне замовлення: 250
В кошику  од. на суму  грн.
GS0650186LRMRXUSA1 Infineon-GS-065-018-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e40492dec
GS0650186LRMRXUSA1
Виробник: Infineon Technologies
Description: GS-065-018-6-LR-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
на замовлення 412 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+475.66 грн
10+309.40 грн
100+225.28 грн
В кошику  од. на суму  грн.
GS0650116LRMRXUSA1 Infineon-GS-065-011-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e3a3d2de6
GS0650116LRMRXUSA1
Виробник: Infineon Technologies
Description: GS-065-011-6-LR-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
250+143.09 грн
Мінімальне замовлення: 250
В кошику  од. на суму  грн.
GS0650116LRMRXUSA1 Infineon-GS-065-011-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e3a3d2de6
GS0650116LRMRXUSA1
Виробник: Infineon Technologies
Description: GS-065-011-6-LR-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
на замовлення 496 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+337.97 грн
10+216.21 грн
100+154.16 грн
В кошику  од. на суму  грн.
GS0650146LRMRXUSA1 Infineon-GS-065-014-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e3d512de9
GS0650146LRMRXUSA1
Виробник: Infineon Technologies
Description: GS-065-014-6-LR-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 3mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
250+171.46 грн
Мінімальне замовлення: 250
В кошику  од. на суму  грн.
GS0650146LRMRXUSA1 Infineon-GS-065-014-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e3d512de9
GS0650146LRMRXUSA1
Виробник: Infineon Technologies
Description: GS-065-014-6-LR-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 3mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V
на замовлення 437 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+396.64 грн
10+255.54 грн
100+183.97 грн
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GS0650306LRMRXUSA1 Infineon-GS-065-030-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e5d762df9
GS0650306LRMRXUSA1
Виробник: Infineon Technologies
Description: GS-065-030-6-LR-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
250+366.38 грн
500+331.64 грн
750+330.64 грн
Мінімальне замовлення: 250
В кошику  од. на суму  грн.
GS0650306LRMRXUSA1 Infineon-GS-065-030-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e5d762df9
GS0650306LRMRXUSA1
Виробник: Infineon Technologies
Description: GS-065-030-6-LR-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
на замовлення 895 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+776.86 грн
10+517.41 грн
100+404.70 грн
В кошику  од. на суму  грн.
SKB02N60E3266ATMA1 SKB02N60.pdf
SKB02N60E3266ATMA1
Виробник: Infineon Technologies
Description: IGBT NPT 600V 6A TO263-3-2
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/259ns
Switching Energy: 64µJ
Test Condition: 400V, 2A, 118Ohm, 15V
Gate Charge: 14 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 30 W
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
315+63.75 грн
Мінімальне замовлення: 315
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SKB02N60ATMA1 SKB02N60.pdf
SKB02N60ATMA1
Виробник: Infineon Technologies
Description: IGBT NPT 600V 6A TO263-3-2
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/259ns
Switching Energy: 64µJ
Test Condition: 400V, 2A, 118Ohm, 15V
Gate Charge: 14 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 30 W
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
289+69.79 грн
Мінімальне замовлення: 289
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GS66516TMRXUSA1
GS66516TMRXUSA1
Виробник: Infineon Technologies
Description: GS66516T-MR
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
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В кошику  од. на суму  грн.
GS66516TMRXUSA1
GS66516TMRXUSA1
Виробник: Infineon Technologies
Description: GS66516T-MR
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS66516TTRXUMA1 Infineon-GS66516T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e5161d33153ea
GS66516TTRXUMA1
Виробник: Infineon Technologies
Description: GS66516T-TR
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GS66516TTRXUMA1 Infineon-GS66516T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e5161d33153ea
GS66516TTRXUMA1
Виробник: Infineon Technologies
Description: GS66516T-TR
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
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