Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (123035) > Сторінка 771 з 2051
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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| CY8C4045FNIT452TXTMA1 | Infineon Technologies |
Description: HMI-GROWTH PSOC4Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||
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PVA1354NSPBF | Infineon Technologies |
Description: SSR RELAY SPST-NO 375MA 0-100VTermination Style: Gull Wing Operating Temperature: -40°C ~ 85°C Circuit: SPST-NO (1 Form A) Voltage - Input: 1.2VDC Mounting Type: Surface Mount Output Type: AC, DC Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads Packaging: Tube On-State Resistance (Max): 5 Ohms Voltage - Load: 0 V ~ 100 V Supplier Device Package: 8-SMD Relay Type: Photo-Coupled Relay (Photorelay) Approval Agency: UL Load Current: 375 mA |
на замовлення 316 шт: термін постачання 21-31 дні (днів) |
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IPP08CNE8N G | Infineon Technologies |
Description: MOSFET N-CH 85V 95A TO220-3Supplier Device Package: PG-TO220-3 Vgs(th) (Max) @ Id: 4V @ 130µA Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 95A, 10V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 6690 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Drain to Source Voltage (Vdss): 85 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||
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CY91F528RSCPMC-GSE2 | Infineon Technologies |
Description: IC MCU 32B 2.0625MB FLSH 144LQFPDigiKey Programmable: Not Verified Number of I/O: 115 Supplier Device Package: 144-LQFP (20x20) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 48x12b SAR; D/A 2x8b R2R Core Processor: FR81S EEPROM Size: 64K x 8 Program Memory Type: FLASH Oscillator Type: External RAM Size: 336K x 8 Program Memory Size: 2.0625MB (2.0625M x 8) Speed: 80MHz Mounting Type: Surface Mount Package / Case: 144-LQFP Packaging: Tray Operating Temperature: -40°C ~ 105°C (TA) |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | ||||||||||||||
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CY91F528RSDPMC-GSE2 | Infineon Technologies |
Description: IC MCU 32B 2.0625MB FLSH 144LQFPPackaging: Tray Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 2.0625MB (2.0625M x 8) RAM Size: 336K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: FR81S Data Converters: A/D 48x12b SAR; D/A 2x8b R2R Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 144-LQFP (20x20) Number of I/O: 115 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | ||||||||||||||
| CY91F528RSDEQ-GSE2 | Infineon Technologies |
Description: IC MCU 32BT 2.0625MB FLSH 144QFP Packaging: Tray Package / Case: 144-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 128MHz Program Memory Size: 2.0625MB (2.0625M x 8) RAM Size: 336K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: FR81S Data Converters: A/D 48x12b SAR; D/A 2x8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, EBI/EMI, FlexRay, I2C, LINbus, UART/USART Peripherals: DMA, LVD, PWM, WDT Supplier Device Package: 144-LQFP-EP (20x20) Number of I/O: 115 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | |||||||||||||||
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CY91F528YWCPB-GSE1 | Infineon Technologies |
Description: IC MCU 32B 2.0625MB FLSH 416PBGAPackaging: Tray Package / Case: 416-BGA Mounting Type: Surface Mount Speed: 128MHz Program Memory Size: 2.0625MB (2.0625M x 8) RAM Size: 336K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: FR81S Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 416-PBGA (27x27) Number of I/O: 219 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | ||||||||||||||
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S25FL256SAGBAEA03 | Infineon Technologies |
Description: IC FLASH 256MBIT SPI/QUAD 24BGAPackaging: Tape & Reel (TR) Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (8x6) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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CYPM1311-48LDXIT | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 48QFNPackaging: Tape & Reel (TR) Package / Case: 48-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 256KB (256K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 5x8/12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: FIFO, I2C, SPI, SSP, UART/USART, USB Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT Supplier Device Package: 48-QFN (6x6) Number of I/O: 26 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
| CY3250-LED04QFN | Infineon Technologies |
Description: ICE POD DEBUG CY8CLED04Utilized IC / Part: CY3215-DK, CY8CLED04 Accessory Type: Emulator Flex Pod Kit Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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ESD159B1W0201E6327XTSA1 | Infineon Technologies |
Description: TVS DIODESPackaging: Tape & Reel (TR) Package / Case: 01005 (0402 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TA) Applications: General Purpose Capacitance @ Frequency: 0.1pF @ 5GHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 16V (Max) Supplier Device Package: SG-WLL-2-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 17V Voltage - Clamping (Max) @ Ipp: 28.2V (Typ) Power - Peak Pulse: 112W Power Line Protection: No |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | ||||||||||||||
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ESD159B1W0201E6327XTSA1 | Infineon Technologies |
Description: TVS DIODESPackaging: Cut Tape (CT) Package / Case: 01005 (0402 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TA) Applications: General Purpose Capacitance @ Frequency: 0.1pF @ 5GHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 16V (Max) Supplier Device Package: SG-WLL-2-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 17V Voltage - Clamping (Max) @ Ipp: 28.2V (Typ) Power - Peak Pulse: 112W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPB020N03LF2SATMA1 | Infineon Technologies |
Description: IPB020N03LF2SATMA1Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 2.35V @ 80µA Power Dissipation (Max): 3.8W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 122A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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IPB020N03LF2SATMA1 | Infineon Technologies |
Description: IPB020N03LF2SATMA1Power Dissipation (Max): 3.8W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 122A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 2.35V @ 80µA |
на замовлення 790 шт: термін постачання 21-31 дні (днів) |
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IPM018N10NM5LF2AUMA1 | Infineon Technologies |
Description: IPM018N10NM5LF2AUMA1FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 4-PowerSFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Supplier Device Package: PG-HSOG-4-1 Vgs(th) (Max) @ Id: 3.45V @ 240µA Power Dissipation (Max): 3.8W (Ta), 349W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 285A (Tc) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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IPM018N10NM5LF2AUMA1 | Infineon Technologies |
Description: IPM018N10NM5LF2AUMA1Vgs(th) (Max) @ Id: 3.45V @ 240µA Power Dissipation (Max): 3.8W (Ta), 349W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 285A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 4-PowerSFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Supplier Device Package: PG-HSOG-4-1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPF018N10NM5LF2ATMA1 | Infineon Technologies |
Description: IPF018N10NM5LF2ATMA1Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Supplier Device Package: PG-TO263-7-3 Vgs(th) (Max) @ Id: 3.9V @ 280µA Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 259A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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IPF018N10NM5LF2ATMA1 | Infineon Technologies |
Description: IPF018N10NM5LF2ATMA1Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Supplier Device Package: PG-TO263-7-3 Vgs(th) (Max) @ Id: 3.9V @ 280µA Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 259A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Cut Tape (CT) |
на замовлення 199 шт: термін постачання 21-31 дні (днів) |
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| IRFP450PBF | Infineon Technologies |
Description: MOSFET N-CH 500V 14A TO247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TLE9185QXWV33XUMA1 | Infineon Technologies |
Description: BLDC_MOTOR_CONTROLPackaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Controller - Speed Interface: PWM, SPI Operating Temperature: -40°C ~ 175°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 3V ~ 28V Applications: General Purpose Technology: NMOS Voltage - Load: 6V ~ 28V Supplier Device Package: PG-VQFN-48-79 Motor Type - AC, DC: Brushless DC (BLDC) Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLE9185QXWV33XUMA1 | Infineon Technologies |
Description: BLDC_MOTOR_CONTROLPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Controller - Speed Interface: PWM, SPI Operating Temperature: -40°C ~ 175°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 3V ~ 28V Applications: General Purpose Technology: NMOS Voltage - Load: 6V ~ 28V Supplier Device Package: PG-VQFN-48-79 Motor Type - AC, DC: Brushless DC (BLDC) Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLE9185QXWXUMA1 | Infineon Technologies |
Description: BLDC_MOTOR_CONTROLQualification: AEC-Q100 Grade: Automotive Motor Type - AC, DC: Brushless DC (BLDC) Supplier Device Package: PG-VQFN-48-79 Voltage - Load: 6V ~ 28V Technology: NMOS Applications: General Purpose Voltage - Supply: 3V ~ 28V Output Configuration: Half Bridge (3) Operating Temperature: -40°C ~ 175°C (TJ) Interface: PWM, SPI Function: Controller - Speed Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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TLE9185QXWXUMA1 | Infineon Technologies |
Description: BLDC_MOTOR_CONTROLPackaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive Motor Type - AC, DC: Brushless DC (BLDC) Supplier Device Package: PG-VQFN-48-79 Voltage - Load: 6V ~ 28V Technology: NMOS Applications: General Purpose Voltage - Supply: 3V ~ 28V Output Configuration: Half Bridge (3) Operating Temperature: -40°C ~ 175°C (TJ) Interface: PWM, SPI Function: Controller - Speed Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad |
на замовлення 2490 шт: термін постачання 21-31 дні (днів) |
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TLE9564QXWXUMA1 | Infineon Technologies |
Description: BLDC_MOTOR_CONTROLMounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Tape & Reel (TR) Operating Temperature: -40°C ~ 175°C (TJ) Interface: PWM, SPI Function: Controller - Speed Qualification: AEC-Q100 Grade: Automotive Motor Type - AC, DC: Brushless DC (BLDC) Supplier Device Package: PG-VQFN-48-79 Voltage - Load: 6V ~ 28V Technology: NMOS Applications: General Purpose Voltage - Supply: 3V ~ 28V Output Configuration: Half Bridge (3) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLE9564QXWXUMA1 | Infineon Technologies |
Description: BLDC_MOTOR_CONTROLVoltage - Supply: 3V ~ 28V Output Configuration: Half Bridge (3) Operating Temperature: -40°C ~ 175°C (TJ) Interface: PWM, SPI Function: Controller - Speed Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive Motor Type - AC, DC: Brushless DC (BLDC) Supplier Device Package: PG-VQFN-48-79 Voltage - Load: 6V ~ 28V Technology: NMOS Applications: General Purpose |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLE95623QXJXUMA1 | Infineon Technologies |
Description: BLDC_DRIVER_ICPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Controller - Speed Current - Output: 250mA Interface: CAN, LIN, PWM, SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 3V ~ 28V Technology: NMOS Voltage - Load: 6V ~ 28V Supplier Device Package: PG-VQFN-48-31 Motor Type - AC, DC: Brushed DC Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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TLE95623QXJXUMA1 | Infineon Technologies |
Description: BLDC_DRIVER_ICPackaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Controller - Speed Current - Output: 250mA Interface: CAN, LIN, PWM, SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 3V ~ 28V Technology: NMOS Voltage - Load: 6V ~ 28V Supplier Device Package: PG-VQFN-48-31 Motor Type - AC, DC: Brushed DC Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2300 шт: термін постачання 21-31 дні (днів) |
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IGC019S06S1XTMA1 | Infineon Technologies |
Description: GANFET N-CH 60V 27A 6TDFNPackaging: Cut Tape (CT) Package / Case: 6-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 99A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 35A, 5V Power Dissipation (Max): 3.3W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 12mA Supplier Device Package: PG-TSON-6-2 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±6.5V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 30 V |
на замовлення 2398 шт: термін постачання 21-31 дні (днів) |
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IRF7470TRPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 10A 8SOInput Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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IRF7470TRPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 10A 8SOVgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRF7468TRPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 9.4A 8SOInput Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9.4A, 10V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPDQ60T022S7XTMA1 | Infineon Technologies |
Description: HIGH POWER_NEWPackaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.43mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V |
товару немає в наявності |
Мінімальне замовлення: 750 шт В кошику од. на суму грн. | ||||||||||||||
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IPDQ60T022S7XTMA1 | Infineon Technologies |
Description: HIGH POWER_NEWPackaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.43mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V |
на замовлення 62 шт: термін постачання 21-31 дні (днів) |
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IPQC60T022S7AXTMA1 | Infineon Technologies |
Description: AUTOMOTIVE_COOLMOSPackaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.43mA Supplier Device Package: PG-HDSOP-22-101 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 750 шт В кошику од. на суму грн. | ||||||||||||||
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IPQC60T022S7AXTMA1 | Infineon Technologies |
Description: AUTOMOTIVE_COOLMOSPackaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.43mA Supplier Device Package: PG-HDSOP-22-101 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V Qualification: AEC-Q101 |
на замовлення 90 шт: термін постачання 21-31 дні (днів) |
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IPDQ60T022S7AXTMA1 | Infineon Technologies |
Description: AUTOMOTIVE_COOLMOSPackaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.43mA Supplier Device Package: PG-HDSOP-22-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 750 шт В кошику од. на суму грн. | ||||||||||||||
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IPDQ60T022S7AXTMA1 | Infineon Technologies |
Description: AUTOMOTIVE_COOLMOSPackaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.43mA Supplier Device Package: PG-HDSOP-22-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V Qualification: AEC-Q101 |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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BTS70202EPADAUGHBRDTOBO1 | Infineon Technologies |
Description: BTS7020-2EPA DAUGH BRDPackaging: Box Function: Switch Type: Power Management Contents: Board(s) Utilized IC / Part: BTS7020-2EPA |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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IPS50R520CP | Infineon Technologies |
Description: MOSFET N-CH 550V 7.1A TO251-3Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 66W (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Stub Leads, IPak Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 550 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO251-3-11 |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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AN983X-AH-T-22 | Infineon Technologies |
Description: IC PCI TO ETHERNET LAN 128QFPDigiKey Programmable: Not Verified Supplier Device Package: PG-PQFP-128 Voltage - Supply: 3V ~ 3.6V Package / Case: 128-BFQFP Packaging: Tray |
на замовлення 251 шт: термін постачання 21-31 дні (днів) |
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AN983X-AH-T-22 | Infineon Technologies |
Description: IC PCI TO ETHERNET LAN 128QFPVoltage - Supply: 3V ~ 3.6V Package / Case: 128-BFQFP Packaging: Tray DigiKey Programmable: Not Verified Supplier Device Package: PG-PQFP-128 |
товару немає в наявності |
Мінімальне замовлення: 660 шт В кошику од. на суму грн. | ||||||||||||||
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AUIRFR2905ZTR | Infineon Technologies |
Description: MOSFET N-CH 55V 42A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 36A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Grade: Automotive Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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EVAL2EDGANINV1KWTOBO1 | Infineon Technologies |
Description: EVAL2EDGANINV1KWTOBO1Packaging: Box Function: Motor Controller/Driver Type: Power Management Contents: Board(s) Utilized IC / Part: 2ED21064S06J, IGT65R055D2 Secondary Attributes: On-Board Test Points Embedded: Yes, MCU |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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CYPET131XQMA1 | Infineon Technologies |
Description: EZ-PD PAGXP-PAGXS PULSE EDGE TRAPackaging: Tray Package / Case: 4-DIP (0.315", 8.00mm) Output Type: PWM Mounting Type: Through Hole Output Configuration: Positive Supplier Device Package: PG-TRDIP-4 Synchronous Rectifier: No Output Phases: 1 Clock Sync: Yes Number of Outputs: 1 |
на замовлення 51 шт: термін постачання 21-31 дні (днів) |
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| IDWD10G120C5XKSA2 | Infineon Technologies |
Description: SIC DISCRETE Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 240 шт В кошику од. на суму грн. | |||||||||||||||
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IDDD04G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIC 650V 13A PGHDSOP101Current - Reverse Leakage @ Vr: 14 µA @ 420 V Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-HDSOP-10-1 Current - Average Rectified (Io): 13A Capacitance @ Vr, F: 205pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: 10-PowerSOP Module Packaging: Bulk |
на замовлення 4628 шт: термін постачання 21-31 дні (днів) |
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IRS2117PBF | Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE 8DIPDigiKey Programmable: Not Verified Current - Peak Output (Source, Sink): 290mA, 600mA Logic Voltage - VIL, VIH: 6V, 9.5V Gate Type: IGBT, MOSFET (N-Channel) Number of Drivers: 1 Driven Configuration: High-Side Channel Type: Single Rise / Fall Time (Typ): 75ns, 35ns Supplier Device Package: 8-PDIP High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Bulk |
на замовлення 23363 шт: термін постачання 21-31 дні (днів) |
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IRS2117PBF | Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE 8DIPDriven Configuration: High-Side Channel Type: Single Rise / Fall Time (Typ): 75ns, 35ns Supplier Device Package: 8-PDIP High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Tube DigiKey Programmable: Not Verified Current - Peak Output (Source, Sink): 290mA, 600mA Logic Voltage - VIL, VIH: 6V, 9.5V Gate Type: IGBT, MOSFET (N-Channel) Number of Drivers: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CYALKIT-E03 | Infineon Technologies |
Description: EXPANSION PACK FOR CYALKIT-E02Platform: BLE-Beacon™ Utilized IC / Part: CYBLE-022001-00, S6AE103A Contents: Board(s) Type: RF Function: Bluetooth Low Energy (BLE) Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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EVALS26HL512TTOBO1 | Infineon Technologies |
Description: EVALS26HL512TTOBO1Packaging: Tray Function: FLASH Type: Memory Contents: Board(s) Utilized IC / Part: S26HL512T Platform: Pmod™ |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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CYPD1120-35FNXIT | Infineon Technologies |
Description: IC MCU 32BIT 32KB FLASH 35WLCSP DigiKey Programmable: Not Verified Number of I/O: 31 Supplier Device Package: 35-WLCSP (3.23x2.10) Core Processor: ARM® Cortex®-M0 Applications: USB Type C Program Memory Type: FLASH (32kB) Voltage - Supply: 1.71V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 4K x 8 Interface: I2C, SPI, UART/USART, USB Mounting Type: Surface Mount Package / Case: 35-UFBGA, WLCSP Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE4675GATMA1 | Infineon Technologies |
Description: IC REG LINEAR 5V 400MA TO263-5Packaging: Bulk Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 80 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: TO-263-5 Voltage - Output (Min/Fixed): 5V Control Features: Reset Grade: Automotive PSRR: 65dB (100Hz) Voltage Dropout (Max): 0.5V @ 300mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 25 mA Qualification: AEC-Q100 |
на замовлення 6940 шт: термін постачання 21-31 дні (днів) |
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IMW65R075M2HXKSA1 | Infineon Technologies |
Description: IMW65R075M2HXKSA1Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26.6A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 11.9A, 20V Power Dissipation (Max): 111W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 2.4mA Supplier Device Package: PG-TO247-3-40 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V |
на замовлення 177 шт: термін постачання 21-31 дні (днів) |
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| S29GL256S11TFVV10 | Infineon Technologies |
Description: PNORMounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Packaging: Tray Supplier Device Package: 56-TSOP Memory Format: FLASH Technology: FLASH - NOR (SLC) Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 256Mbit Memory Organization: 256Mb (16M x 16) Access Time: 110 ns Memory Interface: CFI Write Cycle Time - Word, Page: 60ns |
товару немає в наявності |
Мінімальне замовлення: 182 шт В кошику од. на суму грн. | |||||||||||||||
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TDA38806XUMA1 | Infineon Technologies |
Description: HIGHLY EFFICIENT DC-DC BUCK REGUPackaging: Tape & Reel (TR) Package / Case: 14-UFQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 6A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 600kHz, 1.1MHz, 2MHz Voltage - Input (Max): 16V Topology: Buck Supplier Device Package: PG-TSNP-14-6 Synchronous Rectifier: Yes Voltage - Output (Max): 5.5V Voltage - Input (Min): 2.7V Voltage - Output (Min/Fixed): 0.6V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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TDA38806XUMA1 | Infineon Technologies |
Description: HIGHLY EFFICIENT DC-DC BUCK REGUPackaging: Cut Tape (CT) Package / Case: 14-UFQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 6A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 600kHz, 1.1MHz, 2MHz Voltage - Input (Max): 16V Topology: Buck Supplier Device Package: PG-TSNP-14-6 Synchronous Rectifier: Yes Voltage - Output (Max): 5.5V Voltage - Input (Min): 2.7V Voltage - Output (Min/Fixed): 0.6V |
на замовлення 371 шт: термін постачання 21-31 дні (днів) |
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AUIRFR2905Z | Infineon Technologies |
Description: MOSFET N-CH 55V 42A DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 36A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TLE496048MS2XTSA1 | Infineon Technologies |
Description: TLE496048MS2XTSA1 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| TLE496048MS2XTSA1 | Infineon Technologies |
Description: TLE496048MS2XTSA1 Packaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TLE49SRI3XTMA1 | Infineon Technologies |
Description: TLE49SRI3XTMA1Packaging: Tape & Reel (TR) Package / Case: 3-SIP Module, Formed Leads Mounting Type: Through Hole Output: Digital Operating Temperature: -40°C ~ 150°C Termination Style: PC Pin Voltage - Supply: 5V ~ 11V Actuator Type: External Magnet, Not Included Technology: Magnetoresistive For Measuring: Angle, Rotary Position Supplier Device Package: PG-SSO-3-41 Rotation Angle - Electrical, Mechanical: 0° ~ 360° Output Signal: Clockwise Increase Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. |
| CY8C4045FNIT452TXTMA1 |
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товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| PVA1354NSPBF |
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Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 375MA 0-100V
Termination Style: Gull Wing
Operating Temperature: -40°C ~ 85°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Packaging: Tube
On-State Resistance (Max): 5 Ohms
Voltage - Load: 0 V ~ 100 V
Supplier Device Package: 8-SMD
Relay Type: Photo-Coupled Relay (Photorelay)
Approval Agency: UL
Load Current: 375 mA
Description: SSR RELAY SPST-NO 375MA 0-100V
Termination Style: Gull Wing
Operating Temperature: -40°C ~ 85°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Packaging: Tube
On-State Resistance (Max): 5 Ohms
Voltage - Load: 0 V ~ 100 V
Supplier Device Package: 8-SMD
Relay Type: Photo-Coupled Relay (Photorelay)
Approval Agency: UL
Load Current: 375 mA
на замовлення 316 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 615.28 грн |
| 10+ | 527.79 грн |
| 25+ | 503.99 грн |
| 50+ | 456.76 грн |
| 100+ | 441.08 грн |
| 250+ | 421.17 грн |
| IPP08CNE8N G |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 85V 95A TO220-3
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 130µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 95A, 10V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6690 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Drain to Source Voltage (Vdss): 85 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: MOSFET N-CH 85V 95A TO220-3
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 130µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 95A, 10V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6690 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Drain to Source Voltage (Vdss): 85 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| CY91F528RSCPMC-GSE2 |
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Виробник: Infineon Technologies
Description: IC MCU 32B 2.0625MB FLSH 144LQFP
DigiKey Programmable: Not Verified
Number of I/O: 115
Supplier Device Package: 144-LQFP (20x20)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Processor: FR81S
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
RAM Size: 336K x 8
Program Memory Size: 2.0625MB (2.0625M x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tray
Operating Temperature: -40°C ~ 105°C (TA)
Description: IC MCU 32B 2.0625MB FLSH 144LQFP
DigiKey Programmable: Not Verified
Number of I/O: 115
Supplier Device Package: 144-LQFP (20x20)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Processor: FR81S
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
RAM Size: 336K x 8
Program Memory Size: 2.0625MB (2.0625M x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tray
Operating Temperature: -40°C ~ 105°C (TA)
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Мінімальне замовлення: 600 шт
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| CY91F528RSDPMC-GSE2 |
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Виробник: Infineon Technologies
Description: IC MCU 32B 2.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 336K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 115
DigiKey Programmable: Not Verified
Description: IC MCU 32B 2.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 336K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 115
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 600 шт
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| CY91F528RSDEQ-GSE2 |
Виробник: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 144QFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 336K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 144-LQFP-EP (20x20)
Number of I/O: 115
DigiKey Programmable: Not Verified
Description: IC MCU 32BT 2.0625MB FLSH 144QFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 336K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 144-LQFP-EP (20x20)
Number of I/O: 115
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 600 шт
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| CY91F528YWCPB-GSE1 |
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Виробник: Infineon Technologies
Description: IC MCU 32B 2.0625MB FLSH 416PBGA
Packaging: Tray
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 336K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 416-PBGA (27x27)
Number of I/O: 219
DigiKey Programmable: Not Verified
Description: IC MCU 32B 2.0625MB FLSH 416PBGA
Packaging: Tray
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 336K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 416-PBGA (27x27)
Number of I/O: 219
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 400 шт
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| S25FL256SAGBAEA03 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| CYPM1311-48LDXIT |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 5x8/12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 26
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 5x8/12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 26
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 2500 шт
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| CY3250-LED04QFN |
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Виробник: Infineon Technologies
Description: ICE POD DEBUG CY8CLED04
Utilized IC / Part: CY3215-DK, CY8CLED04
Accessory Type: Emulator Flex Pod Kit
Packaging: Bulk
Description: ICE POD DEBUG CY8CLED04
Utilized IC / Part: CY3215-DK, CY8CLED04
Accessory Type: Emulator Flex Pod Kit
Packaging: Bulk
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| ESD159B1W0201E6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODES
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 5GHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17V
Voltage - Clamping (Max) @ Ipp: 28.2V (Typ)
Power - Peak Pulse: 112W
Power Line Protection: No
Description: TVS DIODES
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 5GHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17V
Voltage - Clamping (Max) @ Ipp: 28.2V (Typ)
Power - Peak Pulse: 112W
Power Line Protection: No
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Мінімальне замовлення: 15000 шт
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| ESD159B1W0201E6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODES
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 5GHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17V
Voltage - Clamping (Max) @ Ipp: 28.2V (Typ)
Power - Peak Pulse: 112W
Power Line Protection: No
Description: TVS DIODES
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 5GHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17V
Voltage - Clamping (Max) @ Ipp: 28.2V (Typ)
Power - Peak Pulse: 112W
Power Line Protection: No
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| IPB020N03LF2SATMA1 |
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Виробник: Infineon Technologies
Description: IPB020N03LF2SATMA1
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 122A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: IPB020N03LF2SATMA1
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 122A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 800 шт
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| IPB020N03LF2SATMA1 |
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Виробник: Infineon Technologies
Description: IPB020N03LF2SATMA1
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 122A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Description: IPB020N03LF2SATMA1
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 122A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.35V @ 80µA
на замовлення 790 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 194.50 грн |
| 10+ | 121.26 грн |
| 100+ | 83.66 грн |
| IPM018N10NM5LF2AUMA1 |
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Виробник: Infineon Technologies
Description: IPM018N10NM5LF2AUMA1
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-HSOG-4-1
Vgs(th) (Max) @ Id: 3.45V @ 240µA
Power Dissipation (Max): 3.8W (Ta), 349W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 285A (Tc)
Description: IPM018N10NM5LF2AUMA1
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-HSOG-4-1
Vgs(th) (Max) @ Id: 3.45V @ 240µA
Power Dissipation (Max): 3.8W (Ta), 349W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 285A (Tc)
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Мінімальне замовлення: 2000 шт
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| IPM018N10NM5LF2AUMA1 |
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Виробник: Infineon Technologies
Description: IPM018N10NM5LF2AUMA1
Vgs(th) (Max) @ Id: 3.45V @ 240µA
Power Dissipation (Max): 3.8W (Ta), 349W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 285A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-HSOG-4-1
Description: IPM018N10NM5LF2AUMA1
Vgs(th) (Max) @ Id: 3.45V @ 240µA
Power Dissipation (Max): 3.8W (Ta), 349W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 285A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-HSOG-4-1
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| IPF018N10NM5LF2ATMA1 |
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Виробник: Infineon Technologies
Description: IPF018N10NM5LF2ATMA1
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 259A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Description: IPF018N10NM5LF2ATMA1
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 259A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
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Мінімальне замовлення: 1000 шт
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| IPF018N10NM5LF2ATMA1 |
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Виробник: Infineon Technologies
Description: IPF018N10NM5LF2ATMA1
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 259A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Description: IPF018N10NM5LF2ATMA1
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 259A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
на замовлення 199 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 427.75 грн |
| 10+ | 276.77 грн |
| 100+ | 200.61 грн |
| IRFP450PBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 14A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Description: MOSFET N-CH 500V 14A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
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В кошику
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| TLE9185QXWV33XUMA1 |
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Виробник: Infineon Technologies
Description: BLDC_MOTOR_CONTROL
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-79
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
Description: BLDC_MOTOR_CONTROL
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-79
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 296.79 грн |
| 10+ | 215.73 грн |
| 25+ | 198.22 грн |
| 100+ | 167.95 грн |
| 250+ | 159.33 грн |
| 500+ | 154.13 грн |
| 1000+ | 147.40 грн |
| TLE9185QXWV33XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: BLDC_MOTOR_CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-79
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
Description: BLDC_MOTOR_CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-79
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 160.82 грн |
| TLE9185QXWXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: BLDC_MOTOR_CONTROL
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: PG-VQFN-48-79
Voltage - Load: 6V ~ 28V
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 3V ~ 28V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 175°C (TJ)
Interface: PWM, SPI
Function: Controller - Speed
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: BLDC_MOTOR_CONTROL
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: PG-VQFN-48-79
Voltage - Load: 6V ~ 28V
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 3V ~ 28V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 175°C (TJ)
Interface: PWM, SPI
Function: Controller - Speed
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TLE9185QXWXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: BLDC_MOTOR_CONTROL
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: PG-VQFN-48-79
Voltage - Load: 6V ~ 28V
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 3V ~ 28V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 175°C (TJ)
Interface: PWM, SPI
Function: Controller - Speed
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Description: BLDC_MOTOR_CONTROL
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: PG-VQFN-48-79
Voltage - Load: 6V ~ 28V
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 3V ~ 28V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 175°C (TJ)
Interface: PWM, SPI
Function: Controller - Speed
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 254.17 грн |
| 10+ | 184.76 грн |
| 25+ | 169.78 грн |
| 100+ | 143.83 грн |
| 250+ | 136.44 грн |
| 500+ | 131.99 грн |
| 1000+ | 126.21 грн |
| TLE9564QXWXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: BLDC_MOTOR_CONTROL
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Operating Temperature: -40°C ~ 175°C (TJ)
Interface: PWM, SPI
Function: Controller - Speed
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: PG-VQFN-48-79
Voltage - Load: 6V ~ 28V
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 3V ~ 28V
Output Configuration: Half Bridge (3)
Description: BLDC_MOTOR_CONTROL
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Operating Temperature: -40°C ~ 175°C (TJ)
Interface: PWM, SPI
Function: Controller - Speed
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: PG-VQFN-48-79
Voltage - Load: 6V ~ 28V
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 3V ~ 28V
Output Configuration: Half Bridge (3)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 142.43 грн |
| TLE9564QXWXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: BLDC_MOTOR_CONTROL
Voltage - Supply: 3V ~ 28V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 175°C (TJ)
Interface: PWM, SPI
Function: Controller - Speed
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: PG-VQFN-48-79
Voltage - Load: 6V ~ 28V
Technology: NMOS
Applications: General Purpose
Description: BLDC_MOTOR_CONTROL
Voltage - Supply: 3V ~ 28V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 175°C (TJ)
Interface: PWM, SPI
Function: Controller - Speed
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: PG-VQFN-48-79
Voltage - Load: 6V ~ 28V
Technology: NMOS
Applications: General Purpose
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 262.69 грн |
| 10+ | 190.81 грн |
| 25+ | 175.39 грн |
| 100+ | 148.64 грн |
| 250+ | 141.05 грн |
| 500+ | 136.47 грн |
| 1000+ | 130.52 грн |
| TLE95623QXJXUMA1 |
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Виробник: Infineon Technologies
Description: BLDC_DRIVER_IC
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 250mA
Interface: CAN, LIN, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-31
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
Description: BLDC_DRIVER_IC
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 250mA
Interface: CAN, LIN, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-31
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TLE95623QXJXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: BLDC_DRIVER_IC
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 250mA
Interface: CAN, LIN, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-31
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
Description: BLDC_DRIVER_IC
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 250mA
Interface: CAN, LIN, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-31
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 283.62 грн |
| 10+ | 206.92 грн |
| 25+ | 190.37 грн |
| 100+ | 161.59 грн |
| 250+ | 153.44 грн |
| 500+ | 148.53 грн |
| 1000+ | 142.12 грн |
| IGC019S06S1XTMA1 |
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Виробник: Infineon Technologies
Description: GANFET N-CH 60V 27A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 35A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 12mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 30 V
Description: GANFET N-CH 60V 27A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 35A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 12mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 30 V
на замовлення 2398 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 302.99 грн |
| 10+ | 192.22 грн |
| 100+ | 135.72 грн |
| 500+ | 108.78 грн |
| IRF7470TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 10A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 10A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| IRF7470TRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 10A 8SO
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Description: MOSFET N-CH 40V 10A 8SO
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
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В кошику
од. на суму грн.
| IRF7468TRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 9.4A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 9.4A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| IPDQ60T022S7XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
товару немає в наявності
Мінімальне замовлення: 750 шт
В кошику
од. на суму грн.
| IPDQ60T022S7XTMA1 |
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Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
на замовлення 62 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 899.67 грн |
| 10+ | 678.15 грн |
| 25+ | 631.23 грн |
| IPQC60T022S7AXTMA1 |
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Виробник: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
Qualification: AEC-Q101
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 750 шт
В кошику
од. на суму грн.
| IPQC60T022S7AXTMA1 |
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Виробник: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
Qualification: AEC-Q101
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
Qualification: AEC-Q101
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 917.49 грн |
| 10+ | 692.56 грн |
| 25+ | 644.78 грн |
| IPDQ60T022S7AXTMA1 |
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Виробник: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
Qualification: AEC-Q101
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 750 шт
В кошику
од. на суму грн.
| IPDQ60T022S7AXTMA1 |
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Виробник: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
Qualification: AEC-Q101
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
Qualification: AEC-Q101
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 917.49 грн |
| 10+ | 692.56 грн |
| 25+ | 644.78 грн |
| 100+ | 555.80 грн |
| BTS70202EPADAUGHBRDTOBO1 |
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Виробник: Infineon Technologies
Description: BTS7020-2EPA DAUGH BRD
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7020-2EPA
Description: BTS7020-2EPA DAUGH BRD
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7020-2EPA
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3452.99 грн |
| IPS50R520CP |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 550V 7.1A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 66W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3-11
Description: MOSFET N-CH 550V 7.1A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 66W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3-11
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 20078.63 грн |
| AN983X-AH-T-22 |
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Виробник: Infineon Technologies
Description: IC PCI TO ETHERNET LAN 128QFP
DigiKey Programmable: Not Verified
Supplier Device Package: PG-PQFP-128
Voltage - Supply: 3V ~ 3.6V
Package / Case: 128-BFQFP
Packaging: Tray
Description: IC PCI TO ETHERNET LAN 128QFP
DigiKey Programmable: Not Verified
Supplier Device Package: PG-PQFP-128
Voltage - Supply: 3V ~ 3.6V
Package / Case: 128-BFQFP
Packaging: Tray
на замовлення 251 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 121+ | 165.98 грн |
| AN983X-AH-T-22 |
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Виробник: Infineon Technologies
Description: IC PCI TO ETHERNET LAN 128QFP
Voltage - Supply: 3V ~ 3.6V
Package / Case: 128-BFQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Supplier Device Package: PG-PQFP-128
Description: IC PCI TO ETHERNET LAN 128QFP
Voltage - Supply: 3V ~ 3.6V
Package / Case: 128-BFQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Supplier Device Package: PG-PQFP-128
товару немає в наявності
Мінімальне замовлення: 660 шт
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| AUIRFR2905ZTR |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
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| EVAL2EDGANINV1KWTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL2EDGANINV1KWTOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2ED21064S06J, IGT65R055D2
Secondary Attributes: On-Board Test Points
Embedded: Yes, MCU
Description: EVAL2EDGANINV1KWTOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2ED21064S06J, IGT65R055D2
Secondary Attributes: On-Board Test Points
Embedded: Yes, MCU
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 31213.28 грн |
| CYPET131XQMA1 |
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Виробник: Infineon Technologies
Description: EZ-PD PAGXP-PAGXS PULSE EDGE TRA
Packaging: Tray
Package / Case: 4-DIP (0.315", 8.00mm)
Output Type: PWM
Mounting Type: Through Hole
Output Configuration: Positive
Supplier Device Package: PG-TRDIP-4
Synchronous Rectifier: No
Output Phases: 1
Clock Sync: Yes
Number of Outputs: 1
Description: EZ-PD PAGXP-PAGXS PULSE EDGE TRA
Packaging: Tray
Package / Case: 4-DIP (0.315", 8.00mm)
Output Type: PWM
Mounting Type: Through Hole
Output Configuration: Positive
Supplier Device Package: PG-TRDIP-4
Synchronous Rectifier: No
Output Phases: 1
Clock Sync: Yes
Number of Outputs: 1
на замовлення 51 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.37 грн |
| 10+ | 34.40 грн |
| 25+ | 30.86 грн |
| IDDD04G65C6XTMA1 |
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Виробник: Infineon Technologies
Description: DIODE SIC 650V 13A PGHDSOP101
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 13A
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Bulk
Description: DIODE SIC 650V 13A PGHDSOP101
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 13A
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Bulk
на замовлення 4628 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 218+ | 92.36 грн |
| IRS2117PBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8DIP
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 290mA, 600mA
Logic Voltage - VIL, VIH: 6V, 9.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 75ns, 35ns
Supplier Device Package: 8-PDIP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Description: IC GATE DRVR HIGH-SIDE 8DIP
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 290mA, 600mA
Logic Voltage - VIL, VIH: 6V, 9.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 75ns, 35ns
Supplier Device Package: 8-PDIP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
на замовлення 23363 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 146+ | 139.24 грн |
| IRS2117PBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8DIP
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 75ns, 35ns
Supplier Device Package: 8-PDIP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 290mA, 600mA
Logic Voltage - VIL, VIH: 6V, 9.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Description: IC GATE DRVR HIGH-SIDE 8DIP
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 75ns, 35ns
Supplier Device Package: 8-PDIP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 290mA, 600mA
Logic Voltage - VIL, VIH: 6V, 9.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
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| CYALKIT-E03 |
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Виробник: Infineon Technologies
Description: EXPANSION PACK FOR CYALKIT-E02
Platform: BLE-Beacon™
Utilized IC / Part: CYBLE-022001-00, S6AE103A
Contents: Board(s)
Type: RF
Function: Bluetooth Low Energy (BLE)
Packaging: Bulk
Description: EXPANSION PACK FOR CYALKIT-E02
Platform: BLE-Beacon™
Utilized IC / Part: CYBLE-022001-00, S6AE103A
Contents: Board(s)
Type: RF
Function: Bluetooth Low Energy (BLE)
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| EVALS26HL512TTOBO1 |
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Виробник: Infineon Technologies
Description: EVALS26HL512TTOBO1
Packaging: Tray
Function: FLASH
Type: Memory
Contents: Board(s)
Utilized IC / Part: S26HL512T
Platform: Pmod™
Description: EVALS26HL512TTOBO1
Packaging: Tray
Function: FLASH
Type: Memory
Contents: Board(s)
Utilized IC / Part: S26HL512T
Platform: Pmod™
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1325.87 грн |
| CYPD1120-35FNXIT |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 35WLCSP
DigiKey Programmable: Not Verified
Number of I/O: 31
Supplier Device Package: 35-WLCSP (3.23x2.10)
Core Processor: ARM® Cortex®-M0
Applications: USB Type C
Program Memory Type: FLASH (32kB)
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Interface: I2C, SPI, UART/USART, USB
Mounting Type: Surface Mount
Package / Case: 35-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Description: IC MCU 32BIT 32KB FLASH 35WLCSP
DigiKey Programmable: Not Verified
Number of I/O: 31
Supplier Device Package: 35-WLCSP (3.23x2.10)
Core Processor: ARM® Cortex®-M0
Applications: USB Type C
Program Memory Type: FLASH (32kB)
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Interface: I2C, SPI, UART/USART, USB
Mounting Type: Surface Mount
Package / Case: 35-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
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| TLE4675GATMA1 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 400MA TO263-5
Packaging: Bulk
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-263-5
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 400MA TO263-5
Packaging: Bulk
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-263-5
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
на замовлення 6940 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 167+ | 120.47 грн |
| IMW65R075M2HXKSA1 |
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Виробник: Infineon Technologies
Description: IMW65R075M2HXKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26.6A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 11.9A, 20V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.4mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
Description: IMW65R075M2HXKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26.6A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 11.9A, 20V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.4mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
на замовлення 177 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 471.92 грн |
| 30+ | 259.73 грн |
| 120+ | 217.02 грн |
| S29GL256S11TFVV10 |
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Виробник: Infineon Technologies
Description: PNOR
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
Supplier Device Package: 56-TSOP
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Memory Organization: 256Mb (16M x 16)
Access Time: 110 ns
Memory Interface: CFI
Write Cycle Time - Word, Page: 60ns
Description: PNOR
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
Supplier Device Package: 56-TSOP
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Memory Organization: 256Mb (16M x 16)
Access Time: 110 ns
Memory Interface: CFI
Write Cycle Time - Word, Page: 60ns
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Мінімальне замовлення: 182 шт
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| TDA38806XUMA1 |
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Виробник: Infineon Technologies
Description: HIGHLY EFFICIENT DC-DC BUCK REGU
Packaging: Tape & Reel (TR)
Package / Case: 14-UFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz, 1.1MHz, 2MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PG-TSNP-14-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.6V
Description: HIGHLY EFFICIENT DC-DC BUCK REGU
Packaging: Tape & Reel (TR)
Package / Case: 14-UFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz, 1.1MHz, 2MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PG-TSNP-14-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.6V
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Мінімальне замовлення: 3000 шт
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| TDA38806XUMA1 |
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Виробник: Infineon Technologies
Description: HIGHLY EFFICIENT DC-DC BUCK REGU
Packaging: Cut Tape (CT)
Package / Case: 14-UFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz, 1.1MHz, 2MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PG-TSNP-14-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.6V
Description: HIGHLY EFFICIENT DC-DC BUCK REGU
Packaging: Cut Tape (CT)
Package / Case: 14-UFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz, 1.1MHz, 2MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PG-TSNP-14-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.6V
на замовлення 371 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 137.93 грн |
| 10+ | 98.20 грн |
| 25+ | 89.49 грн |
| 100+ | 74.99 грн |
| 250+ | 70.70 грн |
| AUIRFR2905Z |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 36A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 36A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
Qualification: AEC-Q101
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| TLE496048MS2XTSA1 |
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 20.89 грн |
| TLE496048MS2XTSA1 |
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.97 грн |
| 10+ | 31.86 грн |
| 25+ | 29.67 грн |
| 100+ | 24.87 грн |
| 250+ | 23.04 грн |
| 500+ | 21.75 грн |
| 1000+ | 20.22 грн |
| TLE49SRI3XTMA1 |
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Виробник: Infineon Technologies
Description: TLE49SRI3XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 3-SIP Module, Formed Leads
Mounting Type: Through Hole
Output: Digital
Operating Temperature: -40°C ~ 150°C
Termination Style: PC Pin
Voltage - Supply: 5V ~ 11V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Rotary Position
Supplier Device Package: PG-SSO-3-41
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Clockwise Increase
Grade: Automotive
Qualification: AEC-Q100
Description: TLE49SRI3XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 3-SIP Module, Formed Leads
Mounting Type: Through Hole
Output: Digital
Operating Temperature: -40°C ~ 150°C
Termination Style: PC Pin
Voltage - Supply: 5V ~ 11V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Rotary Position
Supplier Device Package: PG-SSO-3-41
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Clockwise Increase
Grade: Automotive
Qualification: AEC-Q100
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Мінімальне замовлення: 2000 шт
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