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IMT65R015M2HXUMA1 IMT65R015M2HXUMA1 Infineon Technologies Infineon-IMT65R015M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934dfcb7ba3ba6 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 64.2A, 20V
Power Dissipation (Max): 535W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
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IGB03N120S7ATMA1 IGB03N120S7ATMA1 Infineon Technologies Infineon08012024DSIGB03N120S7v100en.pdf Description: IGBT 1200V 9A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: PG-TO263-3-2
Td (on/off) @ 25°C: 19ns/89ns
Switching Energy: 210µJ (on), 160µJ (off)
Test Condition: 600V, 3A, 60Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 37 W
товару немає в наявності
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IGB03N120S7ATMA1 IGB03N120S7ATMA1 Infineon Technologies Infineon08012024DSIGB03N120S7v100en.pdf Description: IGBT 1200V 9A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: PG-TO263-3-2
Td (on/off) @ 25°C: 19ns/89ns
Switching Energy: 210µJ (on), 160µJ (off)
Test Condition: 600V, 3A, 60Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 37 W
на замовлення 890 шт:
термін постачання 21-31 дні (днів)
3+146.66 грн
10+90.19 грн
100+60.93 грн
500+45.41 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IGW03N120H2FKSA1 IGW03N120H2FKSA1 Infineon Technologies IGW03N120H2.pdf Description: IGBT 1200V 9.6A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO247-3-1
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 290µJ
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
на замовлення 564 шт:
термін постачання 21-31 дні (днів)
137+161.02 грн
Мінімальне замовлення: 137
В кошику  од. на суму  грн.
AUIRFP1405 AUIRFP1405 Infineon Technologies IRSDS11927-1.pdf?t.download=true&u=5oefqw Description: AUIRFP1405 - 55V-60V N-CHANNEL A
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 95A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
103+213.12 грн
Мінімальне замовлення: 103
В кошику  од. на суму  грн.
AUIRFP1405 AUIRFP1405 Infineon Technologies AUIRFP1405.pdf Description: MOSFET N-CH 55V 95A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 95A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Qualification: AEC-Q101
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IAUC64N08S5L075ATMA1 IAUC64N08S5L075ATMA1 Infineon Technologies Infineon-IAUC64N08S5L075-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd40f74020b Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tj)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 32A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2106 pF @ 40 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IAUC64N08S5L075ATMA1 IAUC64N08S5L075ATMA1 Infineon Technologies Infineon-IAUC64N08S5L075-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd40f74020b Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tj)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 32A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2106 pF @ 40 V
Qualification: AEC-Q101
на замовлення 2106 шт:
термін постачання 21-31 дні (днів)
3+134.65 грн
10+82.42 грн
100+55.42 грн
500+41.15 грн
1000+37.80 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
1ED3141MC12HXUMA1 1ED3141MC12HXUMA1 Infineon Technologies Infineon-1ED314xMU12F&1ED314xMC12H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185e8c38e856d7e Description: ISOLATED DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 300kV/µs
Propagation Delay tpLH / tpHL (Max): 50ns, 50ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 12.35V ~ 32V
товару немає в наявності
В кошику  од. на суму  грн.
1ED3141MC12HXUMA1 1ED3141MC12HXUMA1 Infineon Technologies Infineon-1ED314xMU12F&1ED314xMC12H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185e8c38e856d7e Description: ISOLATED DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 300kV/µs
Propagation Delay tpLH / tpHL (Max): 50ns, 50ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 12.35V ~ 32V
на замовлення 1450 шт:
термін постачання 21-31 дні (днів)
3+122.64 грн
10+86.55 грн
25+78.66 грн
100+65.66 грн
250+61.77 грн
500+59.43 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
1ED3145MC12HXUMA1 1ED3145MC12HXUMA1 Infineon Technologies Infineon-1ED314xMU12F&1ED314xMC12H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185e8c38e856d7e Description: ISOLATED DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-LDSO-8
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 300kV/µs
Propagation Delay tpLH / tpHL (Max): 50ns, 50ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 4.35V ~ 32V
товару немає в наявності
В кошику  од. на суму  грн.
1ED3145MC12HXUMA1 1ED3145MC12HXUMA1 Infineon Technologies Infineon-1ED314xMU12F&1ED314xMC12H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185e8c38e856d7e Description: ISOLATED DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-LDSO-8
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 300kV/µs
Propagation Delay tpLH / tpHL (Max): 50ns, 50ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 4.35V ~ 32V
на замовлення 1276 шт:
термін постачання 21-31 дні (днів)
3+122.64 грн
10+86.55 грн
25+78.66 грн
100+65.66 грн
250+61.77 грн
500+59.43 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
1ED3144MC12HXUMA1 1ED3144MC12HXUMA1 Infineon Technologies Infineon-1ED314xMU12F&1ED314xMC12H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185e8c38e856d7e Description: ISOLATED DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-LDSO-8
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 300kV/µs
Propagation Delay tpLH / tpHL (Max): 50ns, 50ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 14V ~ 32V
товару немає в наявності
В кошику  од. на суму  грн.
1ED3144MC12HXUMA1 1ED3144MC12HXUMA1 Infineon Technologies Infineon-1ED314xMU12F&1ED314xMC12H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185e8c38e856d7e Description: ISOLATED DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-LDSO-8
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 300kV/µs
Propagation Delay tpLH / tpHL (Max): 50ns, 50ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 14V ~ 32V
на замовлення 1203 шт:
термін постачання 21-31 дні (днів)
3+122.64 грн
10+86.55 грн
25+78.66 грн
100+65.66 грн
250+61.77 грн
500+59.43 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
1ED3143MC12HXUMA1 1ED3143MC12HXUMA1 Infineon Technologies Infineon-1ED314xMU12F&1ED314xMC12H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185e8c38e856d7e Description: ISOLATED DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-LDSO-8
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 300kV/µs
Propagation Delay tpLH / tpHL (Max): 50ns, 50ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 12.35V ~ 32V
товару немає в наявності
В кошику  од. на суму  грн.
1ED3143MC12HXUMA1 1ED3143MC12HXUMA1 Infineon Technologies Infineon-1ED314xMU12F&1ED314xMC12H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185e8c38e856d7e Description: ISOLATED DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-LDSO-8
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 300kV/µs
Propagation Delay tpLH / tpHL (Max): 50ns, 50ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 12.35V ~ 32V
на замовлення 1154 шт:
термін постачання 21-31 дні (днів)
3+122.64 грн
10+86.55 грн
25+78.66 грн
100+65.66 грн
250+61.77 грн
500+59.43 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
EVAL1ED3144MC12HSICTOBO1 EVAL1ED3144MC12HSICTOBO1 Infineon Technologies UG2024-07-Eval-1ED3144MC12H-SiC.pdf Description: EVAL BOARD FOR 1ED3144MC12H
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1ED3144MC12H
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+6635.62 грн
В кошику  од. на суму  грн.
EVAL1ED3142MC12HSICTOBO1 EVAL1ED3142MC12HSICTOBO1 Infineon Technologies UG2024-07-Eval-1ED3142MC12H-SiC.pdf Description: EVAL BOARD FOR 1ED3142MC12H
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1ED3142MC12H
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+6635.62 грн
В кошику  од. на суму  грн.
CY9BF466KPMC-G-JNE2 CY9BF466KPMC-G-JNE2 Infineon Technologies download Description: IC MCU 32BIT 544KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 8x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 33
DigiKey Programmable: Not Verified
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S29GL128S11DHBV23 S29GL128S11DHBV23 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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S29GL128S11DHBV13 S29GL128S11DHBV13 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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CY9BF466KQN-G-AVE2 CY9BF466KQN-G-AVE2 Infineon Technologies download Description: IC MCU 32BIT 544KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 8x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 33
DigiKey Programmable: Not Verified
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S29GL128S10TFV020 S29GL128S10TFV020 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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XC2268N40F80LRABKXUMA1 XC2268N40F80LRABKXUMA1 Infineon Technologies XC226xN.pdf Description: IC MCU 16/32B 320KB FLSH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
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XC2267M104F80LRABKXUMA1 XC2267M104F80LRABKXUMA1 Infineon Technologies XC226xM.pdf Description: IC MCU 16/32B 832KB FLSH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 832KB (832K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
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XC2263N40F40LAAKXUMA1 XC2263N40F40LAAKXUMA1 Infineon Technologies XC226xN.pdf Description: IC MCU 16/32B 320KB FLSH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
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CY7C2268KV18-450BZC CY7C2268KV18-450BZC Infineon Technologies Infineon-CY7C2268KV18_CY7C2270KV18_36-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec197363665 Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
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CY7C2265KV18-450BZC CY7C2265KV18-450BZC Infineon Technologies Infineon-CY7C2263KV18_CY7C2265KV18_36-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec18d15365b Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C2265KV18-550BZC CY7C2265KV18-550BZC Infineon Technologies Infineon-CY7C2263KV18_CY7C2265KV18_36-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec18d15365b Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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IFX54441EJVXUMA1 IFX54441EJVXUMA1 Infineon Technologies INFNS30254-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR POS ADJ 8DSO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 1.22V
Control Features: Enable
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.4V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 12 mA
на замовлення 130 шт:
термін постачання 21-31 дні (днів)
130+169.85 грн
Мінімальне замовлення: 130
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IRF3709ZPBF IRF3709ZPBF Infineon Technologies IRF3709Z%28S%2CL%29PbF.pdf Description: MOSFET N-CH 30V 87A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V
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CY8CTMA140-48LQI-01 CY8CTMA140-48LQI-01 Infineon Technologies CY8CTMA140.pdf Description: IC TRUETOUCH CAPSENSE 48QFN
Packaging: Tray
DigiKey Programmable: Not Verified
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CY8CTMA140-LQI-01 CY8CTMA140-LQI-01 Infineon Technologies CY8CTMA140.pdf Description: IC TRUETOUCH CAPSENSE 36QFN
Packaging: Tray
DigiKey Programmable: Not Verified
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CY8CTMA140-LQI-09 CY8CTMA140-LQI-09 Infineon Technologies CY8CTMA140.pdf Description: IC TRUETOUCH CAPSENSE 36QFN
Packaging: Tray
DigiKey Programmable: Not Verified
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IRSM836-024MATR IRSM836-024MATR Infineon Technologies 2156_InfineonIRSM836024MADSv0101EN.pdf Description: CIPOS NANO
Packaging: Bulk
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
72+308.07 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
TLV49681TBXALA1 TLV49681TBXALA1 Infineon Technologies Infineon-Infineon-TLV4968-1TAB_Hall_Switch-DS-v01_00-DS-v01_00-EN.pdf?fileId=5546d4624e765da5014ede5efa240c43 Description: MAG SWITCH IC HALL EFF 3TO92
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Short Body, Formed Leads
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 26V
Technology: Hall Effect
Sensing Range: 2mT Trip, -2mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Test Condition: 25°C
на замовлення 1990 шт:
термін постачання 21-31 дні (днів)
9+39.45 грн
10+33.04 грн
11+31.30 грн
25+27.41 грн
50+26.04 грн
100+24.81 грн
500+21.96 грн
1000+21.06 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
TLV49681TBXALA1 TLV49681TBXALA1 Infineon Technologies Infineon-Infineon-TLV4968-1TAB_Hall_Switch-DS-v01_00-DS-v01_00-EN.pdf?fileId=5546d4624e765da5014ede5efa240c43 Description: MAG SWITCH IC HALL EFF 3TO92
Features: Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body, Formed Leads
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 26V
Technology: Hall Effect
Sensing Range: 2mT Trip, -2mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Test Condition: 25°C
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CY9AF131KAPMC-G-105-UNE2 CY9AF131KAPMC-G-105-UNE2 Infineon Technologies Description: IC MCU 32BIT 64KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 6x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CSIO, I2C, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 37
DigiKey Programmable: Not Verified
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S29GL256S10TFV020 S29GL256S10TFV020 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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IRF9395MTRPBF IRF9395MTRPBF Infineon Technologies irf9395mpbf.pdf?fileId=5546d462533600a40153561198461db7 Description: MOSFET 2P-CH 30V 14A DIRECTFETMC
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MC
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14A
Input Capacitance (Ciss) (Max) @ Vds: 3241pF @ 15V
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 50µA
Supplier Device Package: DIRECTFET™ MC
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ISC016N04NM7VATMA1 ISC016N04NM7VATMA1 Infineon Technologies 448_ISC016N04NM7V.pdf Description: ISC016N04NM7VATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 1.49mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 35µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
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ISC016N04NM7VATMA1 ISC016N04NM7VATMA1 Infineon Technologies 448_ISC016N04NM7V.pdf Description: ISC016N04NM7VATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 1.49mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 35µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
на замовлення 4685 шт:
термін постачання 21-31 дні (днів)
3+118.36 грн
10+72.18 грн
100+48.17 грн
500+35.54 грн
1000+32.43 грн
2000+31.55 грн
Мінімальне замовлення: 3
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KITFX2G3104LGATOBO1 Infineon Technologies Description: IC MCU USB PERIPH HS 56VFBGA
Packaging: Tray
Function: USB Controller
Type: Interface
Contents: Board(s)
Embedded: No
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IRL1404ZPBF IRL1404ZPBF Infineon Technologies irl1404zpbf.pdf?fileId=5546d462533600a40153565b4b2d24f5 Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
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IMLT65R050M2HXTMA1 IMLT65R050M2HXTMA1 Infineon Technologies infineon-imlt65r050m2h-datasheet-en.pdf Description: SICFET N-CH 650V 47A HDSOP-16
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 18.2A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
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IMLT65R050M2HXTMA1 IMLT65R050M2HXTMA1 Infineon Technologies infineon-imlt65r050m2h-datasheet-en.pdf Description: SICFET N-CH 650V 47A HDSOP-16
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 18.2A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
на замовлення 1680 шт:
термін постачання 21-31 дні (днів)
1+506.87 грн
10+351.41 грн
100+323.05 грн
500+272.48 грн
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IPTC068N20NM6ATMA1 IPTC068N20NM6ATMA1 Infineon Technologies Infineon-IPTC068N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019626da9150613e Description: IPTC068N20NM6ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 126A, 15V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 251µA
Supplier Device Package: PG-HDSOP-16-U04
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1800+264.34 грн
Мінімальне замовлення: 1800
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IPTC068N20NM6ATMA1 IPTC068N20NM6ATMA1 Infineon Technologies Infineon-IPTC068N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019626da9150613e Description: IPTC068N20NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 126A, 15V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 251µA
Supplier Device Package: PG-HDSOP-16-U04
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
на замовлення 2115 шт:
термін постачання 21-31 дні (днів)
1+608.07 грн
10+399.07 грн
100+311.56 грн
В кошику  од. на суму  грн.
AUIRF3205 AUIRF3205 Infineon Technologies auirf3205.pdf?fileId=5546d462533600a4015355ac6c3e139f Description: AUIRF3205 - 55V-60V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3247 pF @ 25 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
133+162.89 грн
Мінімальне замовлення: 133
В кошику  од. на суму  грн.
EVALM1IM06B50TOBO1 EVALM1IM06B50TOBO1 Infineon Technologies EVALM1IM06B50TOBO1.pdf Description: EVALM1IM06B50TOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IM06B50GC1
Embedded: No
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+19173.56 грн
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IQDH88N06LM5CGSCATMA1 IQDH88N06LM5CGSCATMA1 Infineon Technologies Infineon-IQDH88N06LM5CGSC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b6a49ff05e8f Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
товару немає в наявності
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IQDH88N06LM5CGSCATMA1 IQDH88N06LM5CGSCATMA1 Infineon Technologies Infineon-IQDH88N06LM5CGSC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b6a49ff05e8f Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
на замовлення 4200 шт:
термін постачання 21-31 дні (днів)
1+392.80 грн
10+252.14 грн
100+180.55 грн
500+163.65 грн
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IQDH88N06LM5SCATMA1 IQDH88N06LM5SCATMA1 Infineon Technologies IQDH88N06LM5SCATMA1.pdf Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
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IQDH88N06LM5SCATMA1 IQDH88N06LM5SCATMA1 Infineon Technologies IQDH88N06LM5SCATMA1.pdf Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
на замовлення 4793 шт:
термін постачання 21-31 дні (днів)
1+401.38 грн
10+258.01 грн
100+185.01 грн
500+168.53 грн
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IQFH68N06NM5ATMA1 IQFH68N06NM5ATMA1 Infineon Technologies Infineon-IQFH68N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e447a580640 Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 460A (Tc)
Rds On (Max) @ Id, Vgs: 0.68mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 273W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 217µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 30 V
товару немає в наявності
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IQFH68N06NM5ATMA1 IQFH68N06NM5ATMA1 Infineon Technologies Infineon-IQFH68N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e447a580640 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 460A (Tc)
Rds On (Max) @ Id, Vgs: 0.68mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 273W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 217µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 30 V
на замовлення 239 шт:
термін постачання 21-31 дні (днів)
1+479.42 грн
10+310.45 грн
100+227.24 грн
В кошику  од. на суму  грн.
BC848BL3E6327XTMA1 BC848BL3E6327XTMA1 Infineon Technologies bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Description: TRANS NPN 30V 0.1A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
товару немає в наявності
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IRF60DM206 IRF60DM206 Infineon Technologies irf60dm206.pdf?fileId=5546d462533600a4015355e433aa19ca Description: MOSFET N-CH 60V 130A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric ME
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: DirectFET™ Isometric ME
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6530 pF @ 25 V
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IRF60DM206 IRF60DM206 Infineon Technologies irf60dm206.pdf?fileId=5546d462533600a4015355e433aa19ca Description: MOSFET N-CH 60V 130A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric ME
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: DirectFET™ Isometric ME
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6530 pF @ 25 V
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SLB9673XU20FW2624XTMA1 SLB9673XU20FW2624XTMA1 Infineon Technologies infineon-slb9673-tpm20-i2c-fw26xx-ds-rev1-4-2024-11-13-datasheet-en.pdf Description: SLB9673XU20FW2624XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
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IMT65R015M2HXUMA1 Infineon-IMT65R015M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934dfcb7ba3ba6
IMT65R015M2HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 64.2A, 20V
Power Dissipation (Max): 535W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
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IGB03N120S7ATMA1 Infineon08012024DSIGB03N120S7v100en.pdf
IGB03N120S7ATMA1
Виробник: Infineon Technologies
Description: IGBT 1200V 9A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: PG-TO263-3-2
Td (on/off) @ 25°C: 19ns/89ns
Switching Energy: 210µJ (on), 160µJ (off)
Test Condition: 600V, 3A, 60Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 37 W
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IGB03N120S7ATMA1 Infineon08012024DSIGB03N120S7v100en.pdf
IGB03N120S7ATMA1
Виробник: Infineon Technologies
Description: IGBT 1200V 9A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: PG-TO263-3-2
Td (on/off) @ 25°C: 19ns/89ns
Switching Energy: 210µJ (on), 160µJ (off)
Test Condition: 600V, 3A, 60Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 37 W
на замовлення 890 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+146.66 грн
10+90.19 грн
100+60.93 грн
500+45.41 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IGW03N120H2FKSA1 IGW03N120H2.pdf
IGW03N120H2FKSA1
Виробник: Infineon Technologies
Description: IGBT 1200V 9.6A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO247-3-1
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 290µJ
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
на замовлення 564 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
137+161.02 грн
Мінімальне замовлення: 137
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AUIRFP1405 IRSDS11927-1.pdf?t.download=true&u=5oefqw
AUIRFP1405
Виробник: Infineon Technologies
Description: AUIRFP1405 - 55V-60V N-CHANNEL A
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 95A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
103+213.12 грн
Мінімальне замовлення: 103
В кошику  од. на суму  грн.
AUIRFP1405 AUIRFP1405.pdf
AUIRFP1405
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 95A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 95A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Qualification: AEC-Q101
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IAUC64N08S5L075ATMA1 Infineon-IAUC64N08S5L075-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd40f74020b
IAUC64N08S5L075ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tj)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 32A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2106 pF @ 40 V
Qualification: AEC-Q101
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IAUC64N08S5L075ATMA1 Infineon-IAUC64N08S5L075-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd40f74020b
IAUC64N08S5L075ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tj)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 32A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2106 pF @ 40 V
Qualification: AEC-Q101
на замовлення 2106 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+134.65 грн
10+82.42 грн
100+55.42 грн
500+41.15 грн
1000+37.80 грн
Мінімальне замовлення: 3
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1ED3141MC12HXUMA1 Infineon-1ED314xMU12F&1ED314xMC12H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185e8c38e856d7e
1ED3141MC12HXUMA1
Виробник: Infineon Technologies
Description: ISOLATED DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 300kV/µs
Propagation Delay tpLH / tpHL (Max): 50ns, 50ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 12.35V ~ 32V
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1ED3141MC12HXUMA1 Infineon-1ED314xMU12F&1ED314xMC12H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185e8c38e856d7e
1ED3141MC12HXUMA1
Виробник: Infineon Technologies
Description: ISOLATED DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 300kV/µs
Propagation Delay tpLH / tpHL (Max): 50ns, 50ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 12.35V ~ 32V
на замовлення 1450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+122.64 грн
10+86.55 грн
25+78.66 грн
100+65.66 грн
250+61.77 грн
500+59.43 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
1ED3145MC12HXUMA1 Infineon-1ED314xMU12F&1ED314xMC12H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185e8c38e856d7e
1ED3145MC12HXUMA1
Виробник: Infineon Technologies
Description: ISOLATED DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-LDSO-8
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 300kV/µs
Propagation Delay tpLH / tpHL (Max): 50ns, 50ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 4.35V ~ 32V
товару немає в наявності
В кошику  од. на суму  грн.
1ED3145MC12HXUMA1 Infineon-1ED314xMU12F&1ED314xMC12H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185e8c38e856d7e
1ED3145MC12HXUMA1
Виробник: Infineon Technologies
Description: ISOLATED DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-LDSO-8
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 300kV/µs
Propagation Delay tpLH / tpHL (Max): 50ns, 50ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 4.35V ~ 32V
на замовлення 1276 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+122.64 грн
10+86.55 грн
25+78.66 грн
100+65.66 грн
250+61.77 грн
500+59.43 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
1ED3144MC12HXUMA1 Infineon-1ED314xMU12F&1ED314xMC12H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185e8c38e856d7e
1ED3144MC12HXUMA1
Виробник: Infineon Technologies
Description: ISOLATED DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-LDSO-8
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 300kV/µs
Propagation Delay tpLH / tpHL (Max): 50ns, 50ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 14V ~ 32V
товару немає в наявності
В кошику  од. на суму  грн.
1ED3144MC12HXUMA1 Infineon-1ED314xMU12F&1ED314xMC12H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185e8c38e856d7e
1ED3144MC12HXUMA1
Виробник: Infineon Technologies
Description: ISOLATED DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-LDSO-8
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 300kV/µs
Propagation Delay tpLH / tpHL (Max): 50ns, 50ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 14V ~ 32V
на замовлення 1203 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+122.64 грн
10+86.55 грн
25+78.66 грн
100+65.66 грн
250+61.77 грн
500+59.43 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
1ED3143MC12HXUMA1 Infineon-1ED314xMU12F&1ED314xMC12H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185e8c38e856d7e
1ED3143MC12HXUMA1
Виробник: Infineon Technologies
Description: ISOLATED DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-LDSO-8
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 300kV/µs
Propagation Delay tpLH / tpHL (Max): 50ns, 50ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 12.35V ~ 32V
товару немає в наявності
В кошику  од. на суму  грн.
1ED3143MC12HXUMA1 Infineon-1ED314xMU12F&1ED314xMC12H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85c5e5aa0185e8c38e856d7e
1ED3143MC12HXUMA1
Виробник: Infineon Technologies
Description: ISOLATED DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-LDSO-8
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 300kV/µs
Propagation Delay tpLH / tpHL (Max): 50ns, 50ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 12.35V ~ 32V
на замовлення 1154 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+122.64 грн
10+86.55 грн
25+78.66 грн
100+65.66 грн
250+61.77 грн
500+59.43 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
EVAL1ED3144MC12HSICTOBO1 UG2024-07-Eval-1ED3144MC12H-SiC.pdf
EVAL1ED3144MC12HSICTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR 1ED3144MC12H
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1ED3144MC12H
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6635.62 грн
В кошику  од. на суму  грн.
EVAL1ED3142MC12HSICTOBO1 UG2024-07-Eval-1ED3142MC12H-SiC.pdf
EVAL1ED3142MC12HSICTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR 1ED3142MC12H
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1ED3142MC12H
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6635.62 грн
В кошику  од. на суму  грн.
CY9BF466KPMC-G-JNE2 download
CY9BF466KPMC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 8x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 33
DigiKey Programmable: Not Verified
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S29GL128S11DHBV23 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL128S11DHBV23
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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S29GL128S11DHBV13 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL128S11DHBV13
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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CY9BF466KQN-G-AVE2 download
CY9BF466KQN-G-AVE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 8x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 33
DigiKey Programmable: Not Verified
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S29GL128S10TFV020 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL128S10TFV020
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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XC2268N40F80LRABKXUMA1 XC226xN.pdf
XC2268N40F80LRABKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16/32B 320KB FLSH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
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XC2267M104F80LRABKXUMA1 XC226xM.pdf
XC2267M104F80LRABKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16/32B 832KB FLSH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 832KB (832K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
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XC2263N40F40LAAKXUMA1 XC226xN.pdf
XC2263N40F40LAAKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16/32B 320KB FLSH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
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CY7C2268KV18-450BZC Infineon-CY7C2268KV18_CY7C2270KV18_36-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec197363665
CY7C2268KV18-450BZC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
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CY7C2265KV18-450BZC Infineon-CY7C2263KV18_CY7C2265KV18_36-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec18d15365b
CY7C2265KV18-450BZC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C2265KV18-550BZC Infineon-CY7C2263KV18_CY7C2265KV18_36-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec18d15365b
CY7C2265KV18-550BZC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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IFX54441EJVXUMA1 INFNS30254-1.pdf?t.download=true&u=5oefqw
IFX54441EJVXUMA1
Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 8DSO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 1.22V
Control Features: Enable
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.4V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 12 mA
на замовлення 130 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
130+169.85 грн
Мінімальне замовлення: 130
В кошику  од. на суму  грн.
IRF3709ZPBF IRF3709Z%28S%2CL%29PbF.pdf
IRF3709ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 87A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V
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CY8CTMA140-48LQI-01 CY8CTMA140.pdf
CY8CTMA140-48LQI-01
Виробник: Infineon Technologies
Description: IC TRUETOUCH CAPSENSE 48QFN
Packaging: Tray
DigiKey Programmable: Not Verified
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CY8CTMA140-LQI-01 CY8CTMA140.pdf
CY8CTMA140-LQI-01
Виробник: Infineon Technologies
Description: IC TRUETOUCH CAPSENSE 36QFN
Packaging: Tray
DigiKey Programmable: Not Verified
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CY8CTMA140-LQI-09 CY8CTMA140.pdf
CY8CTMA140-LQI-09
Виробник: Infineon Technologies
Description: IC TRUETOUCH CAPSENSE 36QFN
Packaging: Tray
DigiKey Programmable: Not Verified
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IRSM836-024MATR 2156_InfineonIRSM836024MADSv0101EN.pdf
IRSM836-024MATR
Виробник: Infineon Technologies
Description: CIPOS NANO
Packaging: Bulk
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
72+308.07 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
TLV49681TBXALA1 Infineon-Infineon-TLV4968-1TAB_Hall_Switch-DS-v01_00-DS-v01_00-EN.pdf?fileId=5546d4624e765da5014ede5efa240c43
TLV49681TBXALA1
Виробник: Infineon Technologies
Description: MAG SWITCH IC HALL EFF 3TO92
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Short Body, Formed Leads
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 26V
Technology: Hall Effect
Sensing Range: 2mT Trip, -2mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Test Condition: 25°C
на замовлення 1990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+39.45 грн
10+33.04 грн
11+31.30 грн
25+27.41 грн
50+26.04 грн
100+24.81 грн
500+21.96 грн
1000+21.06 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
TLV49681TBXALA1 Infineon-Infineon-TLV4968-1TAB_Hall_Switch-DS-v01_00-DS-v01_00-EN.pdf?fileId=5546d4624e765da5014ede5efa240c43
TLV49681TBXALA1
Виробник: Infineon Technologies
Description: MAG SWITCH IC HALL EFF 3TO92
Features: Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body, Formed Leads
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 26V
Technology: Hall Effect
Sensing Range: 2mT Trip, -2mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Test Condition: 25°C
товару немає в наявності
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CY9AF131KAPMC-G-105-UNE2
CY9AF131KAPMC-G-105-UNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 6x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CSIO, I2C, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 37
DigiKey Programmable: Not Verified
товару немає в наявності
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S29GL256S10TFV020 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL256S10TFV020
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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IRF9395MTRPBF irf9395mpbf.pdf?fileId=5546d462533600a40153561198461db7
IRF9395MTRPBF
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 30V 14A DIRECTFETMC
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MC
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14A
Input Capacitance (Ciss) (Max) @ Vds: 3241pF @ 15V
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 50µA
Supplier Device Package: DIRECTFET™ MC
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ISC016N04NM7VATMA1 448_ISC016N04NM7V.pdf
ISC016N04NM7VATMA1
Виробник: Infineon Technologies
Description: ISC016N04NM7VATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 1.49mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 35µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
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ISC016N04NM7VATMA1 448_ISC016N04NM7V.pdf
ISC016N04NM7VATMA1
Виробник: Infineon Technologies
Description: ISC016N04NM7VATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 1.49mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 35µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
на замовлення 4685 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+118.36 грн
10+72.18 грн
100+48.17 грн
500+35.54 грн
1000+32.43 грн
2000+31.55 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
KITFX2G3104LGATOBO1
Виробник: Infineon Technologies
Description: IC MCU USB PERIPH HS 56VFBGA
Packaging: Tray
Function: USB Controller
Type: Interface
Contents: Board(s)
Embedded: No
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IRL1404ZPBF irl1404zpbf.pdf?fileId=5546d462533600a40153565b4b2d24f5
IRL1404ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
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IMLT65R050M2HXTMA1 infineon-imlt65r050m2h-datasheet-en.pdf
IMLT65R050M2HXTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 650V 47A HDSOP-16
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 18.2A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
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IMLT65R050M2HXTMA1 infineon-imlt65r050m2h-datasheet-en.pdf
IMLT65R050M2HXTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 650V 47A HDSOP-16
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 18.2A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
на замовлення 1680 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+506.87 грн
10+351.41 грн
100+323.05 грн
500+272.48 грн
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IPTC068N20NM6ATMA1 Infineon-IPTC068N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019626da9150613e
IPTC068N20NM6ATMA1
Виробник: Infineon Technologies
Description: IPTC068N20NM6ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 126A, 15V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 251µA
Supplier Device Package: PG-HDSOP-16-U04
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+264.34 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
IPTC068N20NM6ATMA1 Infineon-IPTC068N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019626da9150613e
IPTC068N20NM6ATMA1
Виробник: Infineon Technologies
Description: IPTC068N20NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 126A, 15V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 251µA
Supplier Device Package: PG-HDSOP-16-U04
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
на замовлення 2115 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+608.07 грн
10+399.07 грн
100+311.56 грн
В кошику  од. на суму  грн.
AUIRF3205 auirf3205.pdf?fileId=5546d462533600a4015355ac6c3e139f
AUIRF3205
Виробник: Infineon Technologies
Description: AUIRF3205 - 55V-60V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3247 pF @ 25 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
133+162.89 грн
Мінімальне замовлення: 133
В кошику  од. на суму  грн.
EVALM1IM06B50TOBO1 EVALM1IM06B50TOBO1.pdf
EVALM1IM06B50TOBO1
Виробник: Infineon Technologies
Description: EVALM1IM06B50TOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IM06B50GC1
Embedded: No
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+19173.56 грн
В кошику  од. на суму  грн.
IQDH88N06LM5CGSCATMA1 Infineon-IQDH88N06LM5CGSC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b6a49ff05e8f
IQDH88N06LM5CGSCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
товару немає в наявності
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IQDH88N06LM5CGSCATMA1 Infineon-IQDH88N06LM5CGSC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b6a49ff05e8f
IQDH88N06LM5CGSCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
на замовлення 4200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+392.80 грн
10+252.14 грн
100+180.55 грн
500+163.65 грн
В кошику  од. на суму  грн.
IQDH88N06LM5SCATMA1 IQDH88N06LM5SCATMA1.pdf
IQDH88N06LM5SCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
товару немає в наявності
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IQDH88N06LM5SCATMA1 IQDH88N06LM5SCATMA1.pdf
IQDH88N06LM5SCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
на замовлення 4793 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+401.38 грн
10+258.01 грн
100+185.01 грн
500+168.53 грн
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IQFH68N06NM5ATMA1 Infineon-IQFH68N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e447a580640
IQFH68N06NM5ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 460A (Tc)
Rds On (Max) @ Id, Vgs: 0.68mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 273W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 217µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 30 V
товару немає в наявності
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IQFH68N06NM5ATMA1 Infineon-IQFH68N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e447a580640
IQFH68N06NM5ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 460A (Tc)
Rds On (Max) @ Id, Vgs: 0.68mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 273W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 217µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 30 V
на замовлення 239 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+479.42 грн
10+310.45 грн
100+227.24 грн
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BC848BL3E6327XTMA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
BC848BL3E6327XTMA1
Виробник: Infineon Technologies
Description: TRANS NPN 30V 0.1A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
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IRF60DM206 irf60dm206.pdf?fileId=5546d462533600a4015355e433aa19ca
IRF60DM206
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 130A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric ME
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: DirectFET™ Isometric ME
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6530 pF @ 25 V
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IRF60DM206 irf60dm206.pdf?fileId=5546d462533600a4015355e433aa19ca
IRF60DM206
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 130A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric ME
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: DirectFET™ Isometric ME
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6530 pF @ 25 V
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SLB9673XU20FW2624XTMA1 infineon-slb9673-tpm20-i2c-fw26xx-ds-rev1-4-2024-11-13-datasheet-en.pdf
SLB9673XU20FW2624XTMA1
Виробник: Infineon Technologies
Description: SLB9673XU20FW2624XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
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