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CYW55912IUBGTXTMA1 Infineon Technologies Infineon-AIROC_TM_CYW55913_2_1_Connected_MCU_with_Wi-Fi_Bluetooth_R_Low_Energy_5-ProductBrief-v02_00-EN.pdf?fileId=8ac78c8c901008d1019024ed031a3e00 Description: WI-FI MCU
Packaging: Tape & Reel (TR)
Package / Case: 143-BGA, WLBGA
Sensitivity: -111.5dBm
Mounting Type: Surface Mount
Frequency: 2.5GHz
Memory Size: 2MB ROM, 768kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 19dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 2Mbps
Supplier Device Package: SG-XFWLB-143
GPIO: 47
Modulation: OFDM
RF Family/Standard: 802.15.4
Serial Interfaces: I2C, SDIO, SPI, UART
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CYW55913IUBGTXTMA1 Infineon Technologies Infineon-AIROC_TM_CYW55913_2_1_Connected_MCU_with_Wi-Fi_Bluetooth_R_Low_Energy_5-ProductBrief-v02_00-EN.pdf?fileId=8ac78c8c901008d1019024ed031a3e00 Description: WI-FI MCU
Packaging: Tape & Reel (TR)
Package / Case: 143-BGA, WLBGA
Sensitivity: -111.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 6GHz
Memory Size: 2MB ROM, 768kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 19dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 2Mbps
Supplier Device Package: SG-XFWLB-143
GPIO: 47
Modulation: OFDM
RF Family/Standard: 802.15.4
Serial Interfaces: I2C, SDIO, SPI, UART
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FM24C16B-GTR FM24C16B-GTR Infineon Technologies Infineon-FM24C16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec98bd541dd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 16KBIT I2C 1MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
на замовлення 5881 шт:
термін постачання 21-31 дні (днів)
3+138.16 грн
10+124.35 грн
25+120.79 грн
50+110.81 грн
100+108.24 грн
250+104.86 грн
500+100.64 грн
1000+98.16 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFHM8329TRPBF IRFHM8329TRPBF Infineon Technologies irfhm8329pbf.pdf?fileId=5546d462533600a4015356234f3d1f4d Description: MOSFET N-CH 30V 16A/57A PQFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 25µA
Supplier Device Package: PQFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 10 V
на замовлення 480 шт:
термін постачання 21-31 дні (днів)
480+21.00 грн
Мінімальне замовлення: 480
В кошику  од. на суму  грн.
IRG7PH35UD-EP IRG7PH35UD-EP Infineon Technologies irg7ph35udpbf.pdf?fileId=5546d462533600a40153564d601323ad Description: IGBT TRENCH 1200V 50A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 1.06mJ (on), 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 180 W
на замовлення 416 шт:
термін постачання 21-31 дні (днів)
69+317.14 грн
Мінімальне замовлення: 69
В кошику  од. на суму  грн.
IRG7PH35UD-EP IRG7PH35UD-EP Infineon Technologies irg7ph35udpbf.pdf?fileId=5546d462533600a40153564d601323ad Description: IGBT TRENCH 1200V 50A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 1.06mJ (on), 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 180 W
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IRG7PH35U-EP IRG7PH35U-EP Infineon Technologies IRG7PH35UPBF%2CU-EP.pdf Description: IGBT TRENCH 1200V 55A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 1.06mJ (on), 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 210 W
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EVAL1ED3145MC12HSICTOBO1 EVAL1ED3145MC12HSICTOBO1 Infineon Technologies UG2024-07-Eval-1ED3145MC12H-SiC.pdf Description: EVAL BOARD FOR 1ED3145MC12H
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1ED3145MC12H
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+6534.89 грн
В кошику  од. на суму  грн.
PMC41410AUMA1 Infineon Technologies Description: IFX POWERSTAGE/DRIVER
Packaging: Tape & Reel (TR)
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PMC41520AUMA1 Infineon Technologies Description: IFX POWERSTAGE/DRIVER
Packaging: Tape & Reel (TR)
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CYT2BL8BAAQ1AZSGSHQLA1 CYT2BL8BAAQ1AZSGSHQLA1 Infineon Technologies Infineon-TRAVEO_2G_CY2BL-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8 Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 64x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Grade: Automotive
Number of I/O: 152
Qualification: AEC-Q100
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CYT2BL8BAAQ1AZSGSTHUYA1 CYT2BL8BAAQ1AZSGSTHUYA1 Infineon Technologies Infineon-TRAVEO_2G_CY2BL-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8 Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 64x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Grade: Automotive
Number of I/O: 152
Qualification: AEC-Q100
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CYT2BL8BAAQ1AZEGSHQLA1 CYT2BL8BAAQ1AZEGSHQLA1 Infineon Technologies Infineon-TRAVEO_2G_CY2BL-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8 Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 64x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Grade: Automotive
Number of I/O: 152
Qualification: AEC-Q100
товару немає в наявності
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CYT2BL8BAAQ1AZEGSTHUYA1 CYT2BL8BAAQ1AZEGSTHUYA1 Infineon Technologies Infineon-TRAVEO_2G_CY2BL-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8 Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 64x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Grade: Automotive
Number of I/O: 152
Qualification: AEC-Q100
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CYT2BL8CAAQ1AZSGSHQLA1 CYT2BL8CAAQ1AZSGSHQLA1 Infineon Technologies Infineon-TRAVEO_2G_CY2BL-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8 Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
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CYT2BL8CAAQ1AZSGSTHUYA1 CYT2BL8CAAQ1AZSGSTHUYA1 Infineon Technologies Infineon-TRAVEO_2G_CY2BL-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8 Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 64x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Grade: Automotive
Number of I/O: 152
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
CYT2BL8CAAQ1AZEGSHQLA1 CYT2BL8CAAQ1AZEGSHQLA1 Infineon Technologies Infineon-TRAVEO_2G_CY2BL-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8 Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
товару немає в наявності
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CYT2BL8CAAQ1AZEGSTHUYA1 CYT2BL8CAAQ1AZEGSTHUYA1 Infineon Technologies Infineon-TRAVEO_2G_CY2BL-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8 Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
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IMCQ120R007M2HXTMA1 Infineon Technologies Infineon-IMCQ120R007M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194da4fae634243 Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
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IMCQ120R005M2HXTMA1 Infineon Technologies Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
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IMCQ120R004M2HXTMA1 Infineon Technologies Description: SIC DISCRETE
Packaging: Tube
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XDP700002XUMA1 XDP700002XUMA1 Infineon Technologies Infineon-XDP700-002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc1866abc54f6 Description: CONTROLLER
Features: Fault Timeout, Latched Fault, OVP, PMBus, UVLO
Packaging: Tape & Reel (TR)
Package / Case: 29-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Hot Swap Controller
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5.5V ~ 80V
Applications: General Purpose
Internal Switch(s): Yes
Current - Output (Max): 1.5A
Supplier Device Package: 29-VQFN (6x6)
Programmable Features: Current Limit, Fault Timeout, OVP, UVLO
Number of Channels: 1
Current - Supply: 7 mA
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+337.76 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
XDP700002XUMA1 XDP700002XUMA1 Infineon Technologies Infineon-XDP700-002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc1866abc54f6 Description: CONTROLLER
Features: Fault Timeout, Latched Fault, OVP, PMBus, UVLO
Packaging: Cut Tape (CT)
Package / Case: 29-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Hot Swap Controller
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5.5V ~ 80V
Applications: General Purpose
Internal Switch(s): Yes
Current - Output (Max): 1.5A
Supplier Device Package: 29-VQFN (6x6)
Programmable Features: Current Limit, Fault Timeout, OVP, UVLO
Number of Channels: 1
Current - Supply: 7 mA
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
1+622.48 грн
10+465.10 грн
25+431.65 грн
100+370.50 грн
250+354.02 грн
500+344.08 грн
1000+330.40 грн
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REF5AR3995BZ114W1TOBO1 REF5AR3995BZ114W1TOBO1 Infineon Technologies UM_REF_5AR3995BZ-1_14W1.pdf Description: REF5AR3995BZ114W1TOBO1
Packaging: Box
Contents: Board(s)
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+7998.08 грн
В кошику  од. на суму  грн.
REF5AR0680BZS144W1TOBO1 REF5AR0680BZS144W1TOBO1 Infineon Technologies UM_REF_5AR0680BZS-1_44W1.pdf Description: REF5AR0680BZS144W1TOBO1
Packaging: Box
Contents: Board(s)
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+7998.08 грн
В кошику  од. на суму  грн.
REF5AR4780BZS114W1TOBO1 REF5AR4780BZS114W1TOBO1 Infineon Technologies UM_REF_5AR4780BZS-1_14W1.pdf Description: REF5AR4780BZS114W1TOBO1
Packaging: Box
Contents: Board(s)
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+9938.53 грн
В кошику  од. на суму  грн.
AUIRL2203N AUIRL2203N Infineon Technologies AUIRL2203N.pdf Description: MOSFET N-CH 30V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Qualification: AEC-Q101
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CY90F546GSPF-GE1 CY90F546GSPF-GE1 Infineon Technologies Infineon-16-bit_Microcontroller_F2MC-16LX_MB90540G_545G_Series-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edc8f4d6071&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC MCU 16BIT 256KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 81
DigiKey Programmable: Not Verified
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CY62158ELL-45ZSXI CY62158ELL-45ZSXI Infineon Technologies download Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
на замовлення 581 шт:
термін постачання 21-31 дні (днів)
1+1070.70 грн
10+956.51 грн
25+926.61 грн
50+848.46 грн
135+818.52 грн
270+797.96 грн
540+764.98 грн
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CY62157H30-45BVXA CY62157H30-45BVXA Infineon Technologies Infineon-CY62157H30-45BVXA-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fb2e298275f Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
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IRFS4620PBF IRFS4620PBF Infineon Technologies irfs4620pbf.pdf?fileId=5546d462533600a40153563a4cc721be Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
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IR21834PBF IR21834PBF Infineon Technologies ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1 Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
на замовлення 1100 шт:
термін постачання 21-31 дні (днів)
104+200.83 грн
Мінімальне замовлення: 104
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IR21834PBF IR21834PBF Infineon Technologies ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1 Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
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TLE9251SJXUMA1 TLE9251SJXUMA1 Infineon Technologies Infineon-TLE9251-DS-v01_10-EN.pdf?fileId=5546d462647040d10164708e75ef0850 Description: IC TRANSCEIVER 1/1 PGDSO860
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-60
Receiver Hysteresis: 30 mV
Grade: Automotive
Qualification: AEC-Q100
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IDWD75E120D7XKSA1 IDWD75E120D7XKSA1 Infineon Technologies IDWD75E120D7_Rev1.00_12-15-23.pdf Description: DIODE STD 1200V 116A PGTO24722
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 195 ns
Technology: Standard
Current - Average Rectified (Io): 116A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 75 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 219 шт:
термін постачання 21-31 дні (днів)
1+350.10 грн
30+211.27 грн
120+192.70 грн
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IRG7PSH50UDPBF IRG7PSH50UDPBF Infineon Technologies IRG7PSH50UDPbF.pdf Description: IGBT TRENCH 1200V 116A TO274-3
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 190 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO274-3-903
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/430ns
Switching Energy: 3.6mJ (on), 2.2mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 440 nC
Current - Collector (Ic) (Max): 116 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 462 W
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IRL6283MTRPBF IRL6283MTRPBF Infineon Technologies irl6283mpbf.pdf?fileId=5546d462533600a40153565fe9452573 Description: MOSFET N-CH 20V 38A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MD
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 211A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: DIRECTFET™ MD
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8292 pF @ 10 V
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IAUCN08S7N034ATMA1 IAUCN08S7N034ATMA1 Infineon Technologies IAUCN08S7N034-Data-Sheet-10-Infineon.pdf Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Qualification: AEC-Q101
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IAUCN08S7N034ATMA1 IAUCN08S7N034ATMA1 Infineon Technologies IAUCN08S7N034-Data-Sheet-10-Infineon.pdf Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Qualification: AEC-Q101
на замовлення 4047 шт:
термін постачання 21-31 дні (днів)
2+187.61 грн
10+116.41 грн
100+82.68 грн
500+62.59 грн
1000+60.02 грн
Мінімальне замовлення: 2
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IAUMN10S5N016GAUMA1 IAUMN10S5N016GAUMA1 Infineon Technologies Infineon-IAUMN10S5N016G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f2f3bf3f51117 Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tj)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 325W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13570 pF @ 50 V
Qualification: AEC-Q101
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IAUMN10S5N016GAUMA1 IAUMN10S5N016GAUMA1 Infineon Technologies Infineon-IAUMN10S5N016G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f2f3bf3f51117 Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tj)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 325W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13570 pF @ 50 V
Qualification: AEC-Q101
на замовлення 375 шт:
термін постачання 21-31 дні (днів)
1+346.17 грн
10+272.65 грн
100+231.64 грн
В кошику  од. на суму  грн.
IR4427PBF IR4427PBF Infineon Technologies ir4426.pdf?fileId=5546d462533600a4015355d60b491822 description Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
на замовлення 589 шт:
термін постачання 21-31 дні (днів)
2+191.53 грн
10+137.50 грн
50+118.78 грн
100+106.02 грн
250+100.27 грн
500+96.80 грн
Мінімальне замовлення: 2
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AUIRFR4104 AUIRFR4104 Infineon Technologies AUIRF%28R%2CU%294104.pdf Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Qualification: AEC-Q101
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AUIRFR4104TRL AUIRFR4104TRL Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Qualification: AEC-Q101
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FS200R12W3T7B11BPSA1 FS200R12W3T7B11BPSA1 Infineon Technologies Infineon-FS200R12W3T7_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b18b3d917394a Description: LOW POWER EASY AG-EASY3B-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 200A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 40300 pF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+6947.00 грн
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IR21363JTRPBF IR21363JTRPBF Infineon Technologies IRSDS12169-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IR21363JTRPBF IR21363JTRPBF Infineon Technologies IRSDS12169-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Cut Tape (CT)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
на замовлення 114 шт:
термін постачання 21-31 дні (днів)
1+528.29 грн
10+393.67 грн
25+364.83 грн
100+312.61 грн
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IRG7PH46UPBF IRG7PH46UPBF Infineon Technologies IRG7PH46UPbF%2CU-EP.pdf Description: IGBT TRENCH 1200V 130A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 45ns/410ns
Switching Energy: 2.56mJ (on), 1.78mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 220 nC
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 469 W
на замовлення 59 шт:
термін постачання 21-31 дні (днів)
59+346.82 грн
Мінімальне замовлення: 59
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CY8C4126LQE-S453 CY8C4126LQE-S453 Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 64KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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XMC1403Q048X0200AAXTMA1 XMC1403Q048X0200AAXTMA1 Infineon Technologies Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Number of I/O: 34
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IR2136JTRPBF IR2136JTRPBF Infineon Technologies IRSDS12169-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
500+253.54 грн
Мінімальне замовлення: 500
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IR2136JTRPBF IR2136JTRPBF Infineon Technologies IRSDS12169-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Cut Tape (CT)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
1+425.45 грн
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BSC016N03LSGATMA1 BSC016N03LSGATMA1 Infineon Technologies BSC016N03LS_rev1.28.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42761a13c1b Description: MOSFET N-CH 30V 32A/100A TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
на замовлення 8554 шт:
термін постачання 21-31 дні (днів)
306+70.96 грн
Мінімальне замовлення: 306
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CYUSB4012FCAXIXQMA1 CYUSB4012FCAXIXQMA1 Infineon Technologies DS_EZ-USB%20FX10.pdf Description: CYUSB4012FCAXIXQMA1
Packaging: Bulk
Package / Case: 169-TFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 3.63V
Controller Series: CYUSB401
Program Memory Type: FLASH (512 B)
Applications: USB Peripheral Controller
Core Processor: ARM® Cortex®-M0+, Cortex®-M4F
Supplier Device Package: 169-FBGA (10x10)
Number of I/O: 48
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CYUSB3282FCAXIXQMA1 CYUSB3282FCAXIXQMA1 Infineon Technologies DS_EZ-USB%20FX5N.pdf Description: CYUSB3282FCAXIXQMA1
Packaging: Bulk
Package / Case: 169-TFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 3.63V
Controller Series: CYUSB328
Program Memory Type: FLASH (512 B)
Applications: USB Peripheral Controller
Core Processor: ARM® Cortex®-M0+, Cortex®-M4F
Supplier Device Package: 169-FBGA (10x10)
Number of I/O: 48
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CYUSB3284FCAXIXQMA1 CYUSB3284FCAXIXQMA1 Infineon Technologies DS_EZ-USB%20FX5N.pdf Description: CYUSB3284FCAXIXQMA1
Packaging: Bulk
Package / Case: 169-TFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 3.63V
Controller Series: CYUSB328
Program Memory Type: FLASH (512 B)
Applications: USB Peripheral Controller
Core Processor: ARM® Cortex®-M0+, Cortex®-M4F
Supplier Device Package: 169-FBGA (10x10)
Number of I/O: 48
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CYUSB4013FCAXIXQMA1 CYUSB4013FCAXIXQMA1 Infineon Technologies DS_EZ-USB%20FX10.pdf Description: USB-DATA
Packaging: Tray
Package / Case: 169-TFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 3.63V
Controller Series: CYUSB401
Program Memory Type: FLASH (512kB)
Applications: USB Peripheral Controller
Core Processor: ARM® Cortex®-M0+, Cortex®-M4F
Supplier Device Package: 169-FBGA (10x10)
Number of I/O: 48
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CYUSB4014FCAXIXQMA1 CYUSB4014FCAXIXQMA1 Infineon Technologies DS_EZ-USB%20FX10.pdf Description: USB-DATA
Packaging: Tray
Package / Case: 169-TFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 3.63V
Controller Series: CYUSB401
Program Memory Type: FLASH (512kB)
Applications: USB Peripheral Controller
Core Processor: ARM® Cortex®-M0+, Cortex®-M4F
Supplier Device Package: 169-FBGA (10x10)
Number of I/O: 48
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CYUSB4022FCAXIXQMA1 CYUSB4022FCAXIXQMA1 Infineon Technologies DS_EZ-USB%20FX5N.pdf Description: CYUSB4022FCAXIXQMA1
Packaging: Bulk
Package / Case: 169-TFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 3.63V
Controller Series: CYUSB402
Program Memory Type: FLASH (512 B)
Applications: USB Peripheral Controller
Core Processor: ARM® Cortex®-M0+, Cortex®-M4F
Supplier Device Package: 169-FBGA (10x10)
Number of I/O: 48
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CYUSB4024FCAXIXQMA1 CYUSB4024FCAXIXQMA1 Infineon Technologies DS_EZ-USB%20FX20.pdf Description: CYUSB4024FCAXIXQMA1
Packaging: Bulk
Package / Case: 169-TFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 3.63V
Controller Series: CYUSB402
Program Memory Type: FLASH (512 B)
Applications: USB Peripheral Controller
Core Processor: ARM® Cortex®-M0+, Cortex®-M4F
Supplier Device Package: 169-FBGA (10x10)
Number of I/O: 48
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CYW55912IUBGTXTMA1 Infineon-AIROC_TM_CYW55913_2_1_Connected_MCU_with_Wi-Fi_Bluetooth_R_Low_Energy_5-ProductBrief-v02_00-EN.pdf?fileId=8ac78c8c901008d1019024ed031a3e00
Виробник: Infineon Technologies
Description: WI-FI MCU
Packaging: Tape & Reel (TR)
Package / Case: 143-BGA, WLBGA
Sensitivity: -111.5dBm
Mounting Type: Surface Mount
Frequency: 2.5GHz
Memory Size: 2MB ROM, 768kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 19dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 2Mbps
Supplier Device Package: SG-XFWLB-143
GPIO: 47
Modulation: OFDM
RF Family/Standard: 802.15.4
Serial Interfaces: I2C, SDIO, SPI, UART
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CYW55913IUBGTXTMA1 Infineon-AIROC_TM_CYW55913_2_1_Connected_MCU_with_Wi-Fi_Bluetooth_R_Low_Energy_5-ProductBrief-v02_00-EN.pdf?fileId=8ac78c8c901008d1019024ed031a3e00
Виробник: Infineon Technologies
Description: WI-FI MCU
Packaging: Tape & Reel (TR)
Package / Case: 143-BGA, WLBGA
Sensitivity: -111.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 6GHz
Memory Size: 2MB ROM, 768kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 19dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 2Mbps
Supplier Device Package: SG-XFWLB-143
GPIO: 47
Modulation: OFDM
RF Family/Standard: 802.15.4
Serial Interfaces: I2C, SDIO, SPI, UART
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FM24C16B-GTR Infineon-FM24C16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec98bd541dd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM24C16B-GTR
Виробник: Infineon Technologies
Description: IC FRAM 16KBIT I2C 1MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
на замовлення 5881 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+138.16 грн
10+124.35 грн
25+120.79 грн
50+110.81 грн
100+108.24 грн
250+104.86 грн
500+100.64 грн
1000+98.16 грн
Мінімальне замовлення: 3
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IRFHM8329TRPBF irfhm8329pbf.pdf?fileId=5546d462533600a4015356234f3d1f4d
IRFHM8329TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 16A/57A PQFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 25µA
Supplier Device Package: PQFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 10 V
на замовлення 480 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
480+21.00 грн
Мінімальне замовлення: 480
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IRG7PH35UD-EP irg7ph35udpbf.pdf?fileId=5546d462533600a40153564d601323ad
IRG7PH35UD-EP
Виробник: Infineon Technologies
Description: IGBT TRENCH 1200V 50A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 1.06mJ (on), 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 180 W
на замовлення 416 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
69+317.14 грн
Мінімальне замовлення: 69
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IRG7PH35UD-EP irg7ph35udpbf.pdf?fileId=5546d462533600a40153564d601323ad
IRG7PH35UD-EP
Виробник: Infineon Technologies
Description: IGBT TRENCH 1200V 50A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 1.06mJ (on), 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 180 W
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IRG7PH35U-EP IRG7PH35UPBF%2CU-EP.pdf
IRG7PH35U-EP
Виробник: Infineon Technologies
Description: IGBT TRENCH 1200V 55A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 1.06mJ (on), 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 210 W
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EVAL1ED3145MC12HSICTOBO1 UG2024-07-Eval-1ED3145MC12H-SiC.pdf
EVAL1ED3145MC12HSICTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR 1ED3145MC12H
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1ED3145MC12H
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6534.89 грн
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PMC41410AUMA1
Виробник: Infineon Technologies
Description: IFX POWERSTAGE/DRIVER
Packaging: Tape & Reel (TR)
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PMC41520AUMA1
Виробник: Infineon Technologies
Description: IFX POWERSTAGE/DRIVER
Packaging: Tape & Reel (TR)
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CYT2BL8BAAQ1AZSGSHQLA1 Infineon-TRAVEO_2G_CY2BL-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8
CYT2BL8BAAQ1AZSGSHQLA1
Виробник: Infineon Technologies
Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 64x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Grade: Automotive
Number of I/O: 152
Qualification: AEC-Q100
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CYT2BL8BAAQ1AZSGSTHUYA1 Infineon-TRAVEO_2G_CY2BL-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8
CYT2BL8BAAQ1AZSGSTHUYA1
Виробник: Infineon Technologies
Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 64x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Grade: Automotive
Number of I/O: 152
Qualification: AEC-Q100
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CYT2BL8BAAQ1AZEGSHQLA1 Infineon-TRAVEO_2G_CY2BL-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8
CYT2BL8BAAQ1AZEGSHQLA1
Виробник: Infineon Technologies
Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 64x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Grade: Automotive
Number of I/O: 152
Qualification: AEC-Q100
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CYT2BL8BAAQ1AZEGSTHUYA1 Infineon-TRAVEO_2G_CY2BL-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8
CYT2BL8BAAQ1AZEGSTHUYA1
Виробник: Infineon Technologies
Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 64x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Grade: Automotive
Number of I/O: 152
Qualification: AEC-Q100
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CYT2BL8CAAQ1AZSGSHQLA1 Infineon-TRAVEO_2G_CY2BL-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8
CYT2BL8CAAQ1AZSGSHQLA1
Виробник: Infineon Technologies
Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
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CYT2BL8CAAQ1AZSGSTHUYA1 Infineon-TRAVEO_2G_CY2BL-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8
CYT2BL8CAAQ1AZSGSTHUYA1
Виробник: Infineon Technologies
Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 64x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Grade: Automotive
Number of I/O: 152
Qualification: AEC-Q100
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CYT2BL8CAAQ1AZEGSHQLA1 Infineon-TRAVEO_2G_CY2BL-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8
CYT2BL8CAAQ1AZEGSHQLA1
Виробник: Infineon Technologies
Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
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CYT2BL8CAAQ1AZEGSTHUYA1 Infineon-TRAVEO_2G_CY2BL-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8
CYT2BL8CAAQ1AZEGSTHUYA1
Виробник: Infineon Technologies
Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
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IMCQ120R007M2HXTMA1 Infineon-IMCQ120R007M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194da4fae634243
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
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IMCQ120R005M2HXTMA1
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
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IMCQ120R004M2HXTMA1
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
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XDP700002XUMA1 Infineon-XDP700-002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc1866abc54f6
XDP700002XUMA1
Виробник: Infineon Technologies
Description: CONTROLLER
Features: Fault Timeout, Latched Fault, OVP, PMBus, UVLO
Packaging: Tape & Reel (TR)
Package / Case: 29-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Hot Swap Controller
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5.5V ~ 80V
Applications: General Purpose
Internal Switch(s): Yes
Current - Output (Max): 1.5A
Supplier Device Package: 29-VQFN (6x6)
Programmable Features: Current Limit, Fault Timeout, OVP, UVLO
Number of Channels: 1
Current - Supply: 7 mA
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+337.76 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
XDP700002XUMA1 Infineon-XDP700-002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc1866abc54f6
XDP700002XUMA1
Виробник: Infineon Technologies
Description: CONTROLLER
Features: Fault Timeout, Latched Fault, OVP, PMBus, UVLO
Packaging: Cut Tape (CT)
Package / Case: 29-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Hot Swap Controller
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5.5V ~ 80V
Applications: General Purpose
Internal Switch(s): Yes
Current - Output (Max): 1.5A
Supplier Device Package: 29-VQFN (6x6)
Programmable Features: Current Limit, Fault Timeout, OVP, UVLO
Number of Channels: 1
Current - Supply: 7 mA
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+622.48 грн
10+465.10 грн
25+431.65 грн
100+370.50 грн
250+354.02 грн
500+344.08 грн
1000+330.40 грн
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REF5AR3995BZ114W1TOBO1 UM_REF_5AR3995BZ-1_14W1.pdf
REF5AR3995BZ114W1TOBO1
Виробник: Infineon Technologies
Description: REF5AR3995BZ114W1TOBO1
Packaging: Box
Contents: Board(s)
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7998.08 грн
В кошику  од. на суму  грн.
REF5AR0680BZS144W1TOBO1 UM_REF_5AR0680BZS-1_44W1.pdf
REF5AR0680BZS144W1TOBO1
Виробник: Infineon Technologies
Description: REF5AR0680BZS144W1TOBO1
Packaging: Box
Contents: Board(s)
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7998.08 грн
В кошику  од. на суму  грн.
REF5AR4780BZS114W1TOBO1 UM_REF_5AR4780BZS-1_14W1.pdf
REF5AR4780BZS114W1TOBO1
Виробник: Infineon Technologies
Description: REF5AR4780BZS114W1TOBO1
Packaging: Box
Contents: Board(s)
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+9938.53 грн
В кошику  од. на суму  грн.
AUIRL2203N AUIRL2203N.pdf
AUIRL2203N
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Qualification: AEC-Q101
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CY90F546GSPF-GE1 Infineon-16-bit_Microcontroller_F2MC-16LX_MB90540G_545G_Series-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edc8f4d6071&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
CY90F546GSPF-GE1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 81
DigiKey Programmable: Not Verified
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CY62158ELL-45ZSXI download
CY62158ELL-45ZSXI
Виробник: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
на замовлення 581 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1070.70 грн
10+956.51 грн
25+926.61 грн
50+848.46 грн
135+818.52 грн
270+797.96 грн
540+764.98 грн
В кошику  од. на суму  грн.
CY62157H30-45BVXA Infineon-CY62157H30-45BVXA-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fb2e298275f
CY62157H30-45BVXA
Виробник: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
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IRFS4620PBF irfs4620pbf.pdf?fileId=5546d462533600a40153563a4cc721be
IRFS4620PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
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IR21834PBF ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1
IR21834PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
на замовлення 1100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
104+200.83 грн
Мінімальне замовлення: 104
В кошику  од. на суму  грн.
IR21834PBF ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1
IR21834PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
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TLE9251SJXUMA1 Infineon-TLE9251-DS-v01_10-EN.pdf?fileId=5546d462647040d10164708e75ef0850
TLE9251SJXUMA1
Виробник: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGDSO860
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-60
Receiver Hysteresis: 30 mV
Grade: Automotive
Qualification: AEC-Q100
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IDWD75E120D7XKSA1 IDWD75E120D7_Rev1.00_12-15-23.pdf
IDWD75E120D7XKSA1
Виробник: Infineon Technologies
Description: DIODE STD 1200V 116A PGTO24722
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 195 ns
Technology: Standard
Current - Average Rectified (Io): 116A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 75 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 219 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+350.10 грн
30+211.27 грн
120+192.70 грн
В кошику  од. на суму  грн.
IRG7PSH50UDPBF IRG7PSH50UDPbF.pdf
IRG7PSH50UDPBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 1200V 116A TO274-3
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 190 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO274-3-903
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/430ns
Switching Energy: 3.6mJ (on), 2.2mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 440 nC
Current - Collector (Ic) (Max): 116 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 462 W
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IRL6283MTRPBF irl6283mpbf.pdf?fileId=5546d462533600a40153565fe9452573
IRL6283MTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 38A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MD
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 211A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: DIRECTFET™ MD
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8292 pF @ 10 V
товару немає в наявності
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IAUCN08S7N034ATMA1 IAUCN08S7N034-Data-Sheet-10-Infineon.pdf
IAUCN08S7N034ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Qualification: AEC-Q101
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IAUCN08S7N034ATMA1 IAUCN08S7N034-Data-Sheet-10-Infineon.pdf
IAUCN08S7N034ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Qualification: AEC-Q101
на замовлення 4047 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+187.61 грн
10+116.41 грн
100+82.68 грн
500+62.59 грн
1000+60.02 грн
Мінімальне замовлення: 2
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IAUMN10S5N016GAUMA1 Infineon-IAUMN10S5N016G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f2f3bf3f51117
IAUMN10S5N016GAUMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tj)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 325W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13570 pF @ 50 V
Qualification: AEC-Q101
товару немає в наявності
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IAUMN10S5N016GAUMA1 Infineon-IAUMN10S5N016G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f2f3bf3f51117
IAUMN10S5N016GAUMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tj)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 325W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13570 pF @ 50 V
Qualification: AEC-Q101
на замовлення 375 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+346.17 грн
10+272.65 грн
100+231.64 грн
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IR4427PBF description ir4426.pdf?fileId=5546d462533600a4015355d60b491822
IR4427PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
на замовлення 589 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+191.53 грн
10+137.50 грн
50+118.78 грн
100+106.02 грн
250+100.27 грн
500+96.80 грн
Мінімальне замовлення: 2
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AUIRFR4104 AUIRF%28R%2CU%294104.pdf
AUIRFR4104
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Qualification: AEC-Q101
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AUIRFR4104TRL fundamentals-of-power-semiconductors
AUIRFR4104TRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Qualification: AEC-Q101
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FS200R12W3T7B11BPSA1 Infineon-FS200R12W3T7_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b18b3d917394a
FS200R12W3T7B11BPSA1
Виробник: Infineon Technologies
Description: LOW POWER EASY AG-EASY3B-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 200A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 40300 pF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6947.00 грн
В кошику  од. на суму  грн.
IR21363JTRPBF IRSDS12169-1.pdf?t.download=true&u=5oefqw
IR21363JTRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IR21363JTRPBF IRSDS12169-1.pdf?t.download=true&u=5oefqw
IR21363JTRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Cut Tape (CT)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
на замовлення 114 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+528.29 грн
10+393.67 грн
25+364.83 грн
100+312.61 грн
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IRG7PH46UPBF IRG7PH46UPbF%2CU-EP.pdf
IRG7PH46UPBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 1200V 130A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 45ns/410ns
Switching Energy: 2.56mJ (on), 1.78mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 220 nC
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 469 W
на замовлення 59 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
59+346.82 грн
Мінімальне замовлення: 59
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CY8C4126LQE-S453 Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4126LQE-S453
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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XMC1403Q048X0200AAXTMA1 Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1403Q048X0200AAXTMA1
Виробник: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Number of I/O: 34
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IR2136JTRPBF IRSDS12169-1.pdf?t.download=true&u=5oefqw
IR2136JTRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
500+253.54 грн
Мінімальне замовлення: 500
В кошику  од. на суму  грн.
IR2136JTRPBF IRSDS12169-1.pdf?t.download=true&u=5oefqw
IR2136JTRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Cut Tape (CT)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+425.45 грн
В кошику  од. на суму  грн.
BSC016N03LSGATMA1 BSC016N03LS_rev1.28.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42761a13c1b
BSC016N03LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 32A/100A TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
на замовлення 8554 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
306+70.96 грн
Мінімальне замовлення: 306
В кошику  од. на суму  грн.
CYUSB4012FCAXIXQMA1 DS_EZ-USB%20FX10.pdf
CYUSB4012FCAXIXQMA1
Виробник: Infineon Technologies
Description: CYUSB4012FCAXIXQMA1
Packaging: Bulk
Package / Case: 169-TFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 3.63V
Controller Series: CYUSB401
Program Memory Type: FLASH (512 B)
Applications: USB Peripheral Controller
Core Processor: ARM® Cortex®-M0+, Cortex®-M4F
Supplier Device Package: 169-FBGA (10x10)
Number of I/O: 48
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CYUSB3282FCAXIXQMA1 DS_EZ-USB%20FX5N.pdf
CYUSB3282FCAXIXQMA1
Виробник: Infineon Technologies
Description: CYUSB3282FCAXIXQMA1
Packaging: Bulk
Package / Case: 169-TFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 3.63V
Controller Series: CYUSB328
Program Memory Type: FLASH (512 B)
Applications: USB Peripheral Controller
Core Processor: ARM® Cortex®-M0+, Cortex®-M4F
Supplier Device Package: 169-FBGA (10x10)
Number of I/O: 48
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CYUSB3284FCAXIXQMA1 DS_EZ-USB%20FX5N.pdf
CYUSB3284FCAXIXQMA1
Виробник: Infineon Technologies
Description: CYUSB3284FCAXIXQMA1
Packaging: Bulk
Package / Case: 169-TFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 3.63V
Controller Series: CYUSB328
Program Memory Type: FLASH (512 B)
Applications: USB Peripheral Controller
Core Processor: ARM® Cortex®-M0+, Cortex®-M4F
Supplier Device Package: 169-FBGA (10x10)
Number of I/O: 48
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CYUSB4013FCAXIXQMA1 DS_EZ-USB%20FX10.pdf
CYUSB4013FCAXIXQMA1
Виробник: Infineon Technologies
Description: USB-DATA
Packaging: Tray
Package / Case: 169-TFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 3.63V
Controller Series: CYUSB401
Program Memory Type: FLASH (512kB)
Applications: USB Peripheral Controller
Core Processor: ARM® Cortex®-M0+, Cortex®-M4F
Supplier Device Package: 169-FBGA (10x10)
Number of I/O: 48
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CYUSB4014FCAXIXQMA1 DS_EZ-USB%20FX10.pdf
CYUSB4014FCAXIXQMA1
Виробник: Infineon Technologies
Description: USB-DATA
Packaging: Tray
Package / Case: 169-TFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 3.63V
Controller Series: CYUSB401
Program Memory Type: FLASH (512kB)
Applications: USB Peripheral Controller
Core Processor: ARM® Cortex®-M0+, Cortex®-M4F
Supplier Device Package: 169-FBGA (10x10)
Number of I/O: 48
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CYUSB4022FCAXIXQMA1 DS_EZ-USB%20FX5N.pdf
CYUSB4022FCAXIXQMA1
Виробник: Infineon Technologies
Description: CYUSB4022FCAXIXQMA1
Packaging: Bulk
Package / Case: 169-TFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 3.63V
Controller Series: CYUSB402
Program Memory Type: FLASH (512 B)
Applications: USB Peripheral Controller
Core Processor: ARM® Cortex®-M0+, Cortex®-M4F
Supplier Device Package: 169-FBGA (10x10)
Number of I/O: 48
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CYUSB4024FCAXIXQMA1 DS_EZ-USB%20FX20.pdf
CYUSB4024FCAXIXQMA1
Виробник: Infineon Technologies
Description: CYUSB4024FCAXIXQMA1
Packaging: Bulk
Package / Case: 169-TFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 3.63V
Controller Series: CYUSB402
Program Memory Type: FLASH (512 B)
Applications: USB Peripheral Controller
Core Processor: ARM® Cortex®-M0+, Cortex®-M4F
Supplier Device Package: 169-FBGA (10x10)
Number of I/O: 48
товару немає в наявності
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