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IXYH8N250CHV IXYH8N250CHV IXYS littelfuse-discrete-igbts-ixy-8n250chv-datasheet?assetguid=78ea8f5b-1880-4f0f-b0fa-520bc5357c4b Description: IGBT 2500V 29A TO-247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 5 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Supplier Device Package: TO-247HV
Td (on/off) @ 25°C: 11ns/180ns
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Test Condition: 1250V, 8A, 15Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 280 W
на замовлення 1080 шт:
термін постачання 21-31 дні (днів)
1+1428.10 грн
30+862.34 грн
120+771.30 грн
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N2543ZD240 IXYS Description: SCR 2.4KV W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 32000A @ 50Hz
Current - On State (It (AV)) (Max): 2543 A
Supplier Device Package: W46
Voltage - Off State: 2.4 kV
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IXXX200N60B3 IXXX200N60B3 IXYS littelfuse-discrete-igbts-ixx-200n60b3-datasheet?assetguid=ab8f4978-25e6-40df-9e1a-1d06b1455e31 Description: IGBT 600V 380A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 48ns/160ns
Switching Energy: 2.85mJ (on), 4.4mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1630 W
на замовлення 294 шт:
термін постачання 21-31 дні (днів)
1+1514.52 грн
30+919.11 грн
120+831.25 грн
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IXYT85N120A4HV IXYT85N120A4HV IXYS Description: IGBT PT 1200V 300A TO-268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 85A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/400ns
Switching Energy: 4.9mJ (on), 8.3mJ (off)
Test Condition: 600V, 60A, 5Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 520 A
Power - Max: 1150 W
на замовлення 258 шт:
термін постачання 21-31 дні (днів)
1+1723.30 грн
30+1195.58 грн
В кошику  од. на суму  грн.
LSIC2SD120N120PA LSIC2SD120N120PA IXYS LSIC2SD120N120PA.PDF Description: DIODE MODULE SIC 1200V 120A
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A (DC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 86 шт:
термін постачання 21-31 дні (днів)
1+4558.97 грн
10+3360.65 грн
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DSEC29-02AS-TUB DSEC29-02AS-TUB IXYS DSEC29-02AS.pdf Description: DIODE ARRAY GP 200V 15A TO263
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CLB30I1200HB IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLB30I1200HB.pdf Description: SCR 1.2KV 47A TO247
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IXGT6N170-TRL IXYS Description: IXGT6N170 TRL
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IXGT6N170AHV-TRL IXYS Description: IXGT6N170AHV TRL
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IXGT6N170A-TRL IXYS Description: IXGT6N170A TRL
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IXFA44N25X3 IXFA44N25X3 IXYS media?resourcetype=datasheets&itemid=d4d53a59-e025-4cd0-9ea6-9898c3e6cbeb&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf Description: MOSFET N-CH 250V 44A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
на замовлення 1550 шт:
термін постачання 21-31 дні (днів)
300+313.10 грн
Мінімальне замовлення: 300
В кошику  од. на суму  грн.
IXFP44N25X3 IXFP44N25X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf.pdf Description: MOSFET N-CH 250V 44A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
на замовлення 1550 шт:
термін постачання 21-31 дні (днів)
300+373.90 грн
Мінімальне замовлення: 300
В кошику  од. на суму  грн.
IXTH44N25L2 IXYS media?resourcetype=datasheets&itemid=04e8b47d-2398-4a0b-bd4f-d92d25c9b38c&filename=littelfuse_discrete_mosfets_n-channel_linear_ixt_44n25l2_datasheet.pdf Description: MOSFET N-CH 250V 44A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 22A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5740 pF @ 25 V
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R1158NC26P IXYS Description: SCR 2.6KV 2328A W11
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CLA100E1200TZ-TUB CLA100E1200TZ-TUB IXYS Littelfuse-Power-Semiconductors-CLA100E1200TZ-Datasheet?assetguid=5ded1566-2d7d-4412-a055-f9a4f5f53ef4 Description: SCR 1.2KV 160A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-268AA (D3Pak-HV)
Part Status: Active
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
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IXGK120N60B3 IXYS littelfuse_discrete_igbts_pt_ixg_120n60b3_datasheet?assetguid=360c665e-d7b3-4ccb-ba05-1f3b3a839463 Description: IGBT PT 600V 280A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 87 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/227ns
Switching Energy: 2.9mJ (on), 3.5mJ (off)
Test Condition: 480V, 100A, 2Ohm, 15V
Gate Charge: 465 nC
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 780 W
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LSIC2SD120N80PA LSIC2SD120N80PA IXYS littelfuse-power-semiconductors-lsic2sd120n80pa-series-datasheet?assetguid=c1153406-f42d-4f53-bda5-00181628278f Description: DIODE MOD SIC 1200V 75A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 75A (DC)
Supplier Device Package: SOT-227B - miniBLOC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
1+3816.25 грн
10+2586.69 грн
100+1444.39 грн
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IXFK14N100Q IXYS Description: MOSFET N-CH 1000V 14A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 7A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
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DSEK300-06A DSEK300-06A IXYS littelfuse-power-semiconductors-dsek300-06a-datasheet?assetguid=1c3e2386-7e3d-42ec-9d6b-41501918dda4 Description: DIODE MOD GP 600V 150A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.17 V @ 150 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
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N2055MC260 IXYS littelfusediscretethyristorsphasecontroln2055mc20datasheetpdf.pdf Description: SCR 2.6KV 4135A W70
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 28400A @ 50Hz
Current - On State (It (AV)) (Max): 2105 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.47 V
Current - Off State (Max): 120 mA
Supplier Device Package: W70
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 4135 A
Voltage - Off State: 2.6 kV
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N2055MC280 IXYS littelfusediscretethyristorsphasecontroln2055mc20datasheetpdf.pdf Description: SCR 2.8KV 4135A W70
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 28400A @ 50Hz
Current - On State (It (AV)) (Max): 2105 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.47 V
Current - Off State (Max): 120 mA
Supplier Device Package: W70
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 4135 A
Voltage - Off State: 2.8 kV
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IXFN130N90SK IXFN130N90SK IXYS Description: SICARBIDE-DISCRETE MOSFET SOT-22
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M1494NK250 IXYS Description: FAST DIODE
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DSEP30-12B DSEP30-12B IXYS media?resourcetype=datasheets&itemid=5be1dfe3-9c2a-4a98-8d2f-e25f24a9a483&filename=littelfuse%2520power%2520semiconductors%2520dsep30-12b%2520datasheet.pdf Description: DIODE GEN PURP 1.2KV 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 600V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.75 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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MCB60I1200TZ IXYS media?resourcetype=datasheets&itemid=f8cb0642-3abb-46b6-94fa-7b975f84c651&filename=mcb60i1200tz-1623296 Description: 1200V 90A SIC POWER MOSFET
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id: 4V @ 15mA
Supplier Device Package: TO-268AA (D3Pak-HV)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 1000 V
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N1366JK120 IXYS media?resourcetype=datasheets&amp;itemid=a60a062e-c0d3-4818-9ac1-fb4b6acd14fd&amp;filename=littelfuse_discrete_thyristors_phase_control_n1366jk__0_datasheet.pdf Description: SCR 1.2KV 2718A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
Current - On State (It (AV)) (Max): 1366 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.99 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2718 A
Voltage - Off State: 1.2 kV
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N1366JK140 IXYS media?resourcetype=datasheets&amp;itemid=a60a062e-c0d3-4818-9ac1-fb4b6acd14fd&amp;filename=littelfuse_discrete_thyristors_phase_control_n1366jk__0_datasheet.pdf Description: SCR 1.4KV 2718A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
Current - On State (It (AV)) (Max): 1366 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.99 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2718 A
Voltage - Off State: 1.4 kV
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IXFQ60N25X3 IXFQ60N25X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_60n25x3_datasheet.pdf.pdf Description: MOSFET N-CHANNEL 250V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V
на замовлення 1713 шт:
термін постачання 21-31 дні (днів)
1+720.47 грн
10+594.58 грн
100+495.49 грн
500+410.30 грн
1000+369.27 грн
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IXGM20N60 IXYS Description: IGBT 600V 40A TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 2mJ (on), 3.2mJ (off)
Test Condition: 480V, 20A, 82Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
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IXGM25N100A IXYS littelfuse_discrete_igbts_pt_ixgm25n100a_datasheet.pdf.pdf Description: IGBT 1000V 50A 200W TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 5mJ (off)
Test Condition: 800V, 25A, 33Ohm, 15V
Gate Charge: 180 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
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IXTY1N120PTRL IXTY1N120PTRL IXYS Description: MOSFET N-CH 1200V 1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 445 pF @ 25 V
товару немає в наявності
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DSP45-12AZ-TUB IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fDSP45-12AZ.pdf Description: DIODE GEN PURP 1.2KV 45A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 400V, 1MHz
Current - Average Rectified (Io): 45A
Supplier Device Package: TO-268AA (D3Pak-HV)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
товару немає в наявності
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CLA30E1200PB CLA30E1200PB IXYS Littelfuse-Power-Semiconductors-CLA30E1200PB-Datasheet?assetguid=a4d05f17-646e-47d1-8dd8-9de3c784ec65 Description: SCR 1.2KV 47A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 325A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.59 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220-3
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 1.2 kV
на замовлення 230 шт:
термін постачання 21-31 дні (днів)
1+343.12 грн
50+170.31 грн
100+154.87 грн
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MEK95-06DA MEK95-06DA IXYS Littelfuse-Power-Semiconductors-MEA95-06DA-MEK95-06DA-MEE95-06DA-Datasheet?assetguid=28370ac9-cdbf-432b-9115-f10f0447c92e Description: DIODE MODULE GP 600V 95A TO240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
на замовлення 141 шт:
термін постачання 21-31 дні (днів)
1+2383.02 грн
36+1477.75 грн
108+1471.95 грн
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N1159NC380 IXYS Description: SCR 3.8KV 2268A W11
товару немає в наявності
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N1159NC420 IXYS Description: SCR 4.2KV 2268A W11
товару немає в наявності
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MEA75-12DA MEA75-12DA IXYS MEA-MEK-MEE_75-12DA.PDF Description: DIODE MOD GP 1.2KV 75A TO240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.17 V @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 1200 V
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MEK150-04DA MEK150-04DA IXYS Littelfuse-Power-Semiconductors-MEK150-04DA-Datasheet?assetguid=cdfb7df5-7ced-4bec-863c-29b13272ae6f Description: DIODE MOD GP 400V 150A TO-240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 2 mA @ 400 V
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MDD44-16N1B MDD44-16N1B IXYS Littelfuse-Power-Semiconductors-MDD44-16N1B-Datasheet?assetguid=472568E2-30F6-4226-80BC-79C3D899C4DC Description: DIODE MOD GP 1600V 64A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
1+2209.32 грн
В кошику  од. на суму  грн.
MDMA660U1600PTEH IXYS media?resourcetype=datasheets&itemid=6121d227-b8cc-43e1-b8e1-5fab292cc1a4&filename=littelfuse%2520power%2520semiconductors%2520mdma660u1600pteh%2520datasheet.pdf Description: BIPOLARMODULE-BRIDGE RECTIFIER E
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: E3
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 660 A
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 660 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
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MDMA660U1600PT-PC IXYS Description: MDMA660U1600PTEH-PC
Packaging: Box
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MDMA900U1600PTEH MDMA900U1600PTEH IXYS MDMA900U1600PTEH.pdf Description: BIPOLARMODULE-BRIDGE RECTIFIER E
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: E3
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 900 A
Voltage - Forward (Vf) (Max) @ If: 1.92 V @ 900 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
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MDMA900U1600PT-PC IXYS Description: MDMA900U1600PTEH-PC
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VVZ24-12IO1 IXYS Description: BRIDGE RECT 3 PHASE 1200V 27A
товару немає в наявності
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DMA40U1800GU DMA40U1800GU IXYS media?resourcetype=datasheets&itemid=f71e2749-7cb7-4a6d-a573-5ff9e7c0a117&filename=littelfuse%2520power%2520semiconductors%2520dma40u1800gu%2520datasheet.pdf Description: POWER DIODE DISCRETES-RECTIFIER
Packaging: Tube
Package / Case: 5-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: GUFP
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1800 V
на замовлення 130 шт:
термін постачання 21-31 дні (днів)
1+1567.57 грн
14+1084.23 грн
112+993.78 грн
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DMA90U1800LB-TUB IXYS DMA90U1800LB.pdf Description: BRIDGE RECT 1P 1.8KV 90A SMPD.B
Packaging: Tube
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Diode Type: Three Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: ISOPLUS-SMPD™.B
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 90 A
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1800 V
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IXGA28N60A3 IXGA28N60A3 IXYS littelfuse_discrete_igbts_pt_ixg_28n60a3_datasheet.pdf.pdf Description: IGBT
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 24A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/300ns
Switching Energy: 700µJ (on), 2.4mJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 170 A
Power - Max: 190 W
товару немає в наявності
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N1718NC180 IXYS Description: SCR 1.8KV 3450A W11
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
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N1718NC120 IXYS Description: SCR 1.2KV 3450A W11
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MCC95-08I01B MCC95-08I01B IXYS Description: DIODE MOD GP 800V 116A TO240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 116A
Supplier Device Package: TO-240AA
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 5 mA @ 800 V
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IXTA110N12T2 IXTA110N12T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_110n12t2_datasheet.pdf.pdf Description: MOSFET N-CH 120V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 55A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6570 pF @ 25 V
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IXFH80N65X2-4 IXFH80N65X2-4 IXYS littelfuse-discrete-mosfets-ixfh80n65x2-4-datasheet?assetguid=34d5abcd-1798-4a02-af00-91fa7bcec2a9 Description: MOSFET N-CH 650V 80A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
1+1239.85 грн
30+739.82 грн
120+645.08 грн
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IXXH80N65B4D1 IXXH80N65B4D1 IXYS littelfuse-discrete-igbts-ixxh80n65b4d1-datasheet?assetguid=279c11a8-2935-4966-866a-fc76b6081c30 Description: IGBT PT 650V 180A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/112ns
Switching Energy: 3.36mJ (on), 1.83mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 180 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
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MDD95-16N1B MDD95-16N1B IXYS media?resourcetype=datasheets&itemid=787A264D-A97F-47ED-A9E8-A5F7A19F18C1&filename=Littelfuse-Power-Semiconductors-MDD95-16N1B-Datasheet Description: DIODE MOD GP 1600V 120A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 300 A
Current - Reverse Leakage @ Vr: 15 mA @ 1600 V
на замовлення 112 шт:
термін постачання 21-31 дні (днів)
1+3189.91 грн
36+2064.57 грн
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IXTN400N15X4 IXTN400N15X4 IXYS littelfusediscretemosfetsnchannelultrajuncti.pdf Description: MOSFET N-CH 150V 400A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 1070W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
на замовлення 298 шт:
термін постачання 21-31 дні (днів)
1+3402.11 грн
10+2467.87 грн
100+2302.03 грн
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IXSK30N60CD1 IXSK30N60CD1 IXYS Description: IGBT 600V 55A 200W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-264AA (IXSK)
Td (on/off) @ 25°C: 30ns/90ns
Switching Energy: 700µJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 200 W
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IXSK30N60BD1 IXSK30N60BD1 IXYS Description: IGBT 600V 55A TO-264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 55A
Supplier Device Package: TO-264AA (IXSK)
Td (on/off) @ 25°C: 30ns/150ns
Switching Energy: 1.5mJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 200 W
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IXYH100N65A3 IXYH100N65A3 IXYS DS100803IXYH100N65A3.pdf Description: IGBT 650V 240A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 64 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 24ns/174ns
Switching Energy: 3.15mJ (on), 2.2mJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 178 nC
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 470 W
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IXGH120N30B3 IXGH120N30B3 IXYS littelfuse_discrete_igbts_pt_ixgh120n30b3_datasheet.pdf.pdf Description: IGBT 300V 75A 540W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 120A
Supplier Device Package: TO-247AD
IGBT Type: PT
Gate Charge: 225 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 540 W
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DSP8-08S-TRL DSP8-08S-TRL IXYS DSP8-08S.pdf Description: DIODE ARRAY GP 800V 11A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 11A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 7 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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IXYH8N250CHV littelfuse-discrete-igbts-ixy-8n250chv-datasheet?assetguid=78ea8f5b-1880-4f0f-b0fa-520bc5357c4b
IXYH8N250CHV
Виробник: IXYS
Description: IGBT 2500V 29A TO-247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 5 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Supplier Device Package: TO-247HV
Td (on/off) @ 25°C: 11ns/180ns
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Test Condition: 1250V, 8A, 15Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 280 W
на замовлення 1080 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1428.10 грн
30+862.34 грн
120+771.30 грн
В кошику  од. на суму  грн.
N2543ZD240
Виробник: IXYS
Description: SCR 2.4KV W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 32000A @ 50Hz
Current - On State (It (AV)) (Max): 2543 A
Supplier Device Package: W46
Voltage - Off State: 2.4 kV
товару немає в наявності
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IXXX200N60B3 littelfuse-discrete-igbts-ixx-200n60b3-datasheet?assetguid=ab8f4978-25e6-40df-9e1a-1d06b1455e31
IXXX200N60B3
Виробник: IXYS
Description: IGBT 600V 380A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 48ns/160ns
Switching Energy: 2.85mJ (on), 4.4mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1630 W
на замовлення 294 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1514.52 грн
30+919.11 грн
120+831.25 грн
В кошику  од. на суму  грн.
IXYT85N120A4HV
IXYT85N120A4HV
Виробник: IXYS
Description: IGBT PT 1200V 300A TO-268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 85A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/400ns
Switching Energy: 4.9mJ (on), 8.3mJ (off)
Test Condition: 600V, 60A, 5Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 520 A
Power - Max: 1150 W
на замовлення 258 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1723.30 грн
30+1195.58 грн
В кошику  од. на суму  грн.
LSIC2SD120N120PA LSIC2SD120N120PA.PDF
LSIC2SD120N120PA
Виробник: IXYS
Description: DIODE MODULE SIC 1200V 120A
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A (DC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 86 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4558.97 грн
10+3360.65 грн
В кошику  од. на суму  грн.
DSEC29-02AS-TUB DSEC29-02AS.pdf
DSEC29-02AS-TUB
Виробник: IXYS
Description: DIODE ARRAY GP 200V 15A TO263
товару немає в наявності
В кошику  од. на суму  грн.
CLB30I1200HB Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLB30I1200HB.pdf
Виробник: IXYS
Description: SCR 1.2KV 47A TO247
товару немає в наявності
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IXGT6N170-TRL
Виробник: IXYS
Description: IXGT6N170 TRL
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IXGT6N170AHV-TRL
Виробник: IXYS
Description: IXGT6N170AHV TRL
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IXGT6N170A-TRL
Виробник: IXYS
Description: IXGT6N170A TRL
товару немає в наявності
В кошику  од. на суму  грн.
IXFA44N25X3 media?resourcetype=datasheets&itemid=d4d53a59-e025-4cd0-9ea6-9898c3e6cbeb&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf
IXFA44N25X3
Виробник: IXYS
Description: MOSFET N-CH 250V 44A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
на замовлення 1550 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
300+313.10 грн
Мінімальне замовлення: 300
В кошику  од. на суму  грн.
IXFP44N25X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf.pdf
IXFP44N25X3
Виробник: IXYS
Description: MOSFET N-CH 250V 44A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
на замовлення 1550 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
300+373.90 грн
Мінімальне замовлення: 300
В кошику  од. на суму  грн.
IXTH44N25L2 media?resourcetype=datasheets&itemid=04e8b47d-2398-4a0b-bd4f-d92d25c9b38c&filename=littelfuse_discrete_mosfets_n-channel_linear_ixt_44n25l2_datasheet.pdf
Виробник: IXYS
Description: MOSFET N-CH 250V 44A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 22A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5740 pF @ 25 V
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R1158NC26P
Виробник: IXYS
Description: SCR 2.6KV 2328A W11
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CLA100E1200TZ-TUB Littelfuse-Power-Semiconductors-CLA100E1200TZ-Datasheet?assetguid=5ded1566-2d7d-4412-a055-f9a4f5f53ef4
CLA100E1200TZ-TUB
Виробник: IXYS
Description: SCR 1.2KV 160A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-268AA (D3Pak-HV)
Part Status: Active
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
товару немає в наявності
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IXGK120N60B3 littelfuse_discrete_igbts_pt_ixg_120n60b3_datasheet?assetguid=360c665e-d7b3-4ccb-ba05-1f3b3a839463
Виробник: IXYS
Description: IGBT PT 600V 280A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 87 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/227ns
Switching Energy: 2.9mJ (on), 3.5mJ (off)
Test Condition: 480V, 100A, 2Ohm, 15V
Gate Charge: 465 nC
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 780 W
товару немає в наявності
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LSIC2SD120N80PA littelfuse-power-semiconductors-lsic2sd120n80pa-series-datasheet?assetguid=c1153406-f42d-4f53-bda5-00181628278f
LSIC2SD120N80PA
Виробник: IXYS
Description: DIODE MOD SIC 1200V 75A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 75A (DC)
Supplier Device Package: SOT-227B - miniBLOC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3816.25 грн
10+2586.69 грн
100+1444.39 грн
В кошику  од. на суму  грн.
IXFK14N100Q
Виробник: IXYS
Description: MOSFET N-CH 1000V 14A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 7A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
товару немає в наявності
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DSEK300-06A littelfuse-power-semiconductors-dsek300-06a-datasheet?assetguid=1c3e2386-7e3d-42ec-9d6b-41501918dda4
DSEK300-06A
Виробник: IXYS
Description: DIODE MOD GP 600V 150A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.17 V @ 150 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
товару немає в наявності
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N2055MC260 littelfusediscretethyristorsphasecontroln2055mc20datasheetpdf.pdf
Виробник: IXYS
Description: SCR 2.6KV 4135A W70
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 28400A @ 50Hz
Current - On State (It (AV)) (Max): 2105 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.47 V
Current - Off State (Max): 120 mA
Supplier Device Package: W70
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 4135 A
Voltage - Off State: 2.6 kV
товару немає в наявності
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N2055MC280 littelfusediscretethyristorsphasecontroln2055mc20datasheetpdf.pdf
Виробник: IXYS
Description: SCR 2.8KV 4135A W70
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 28400A @ 50Hz
Current - On State (It (AV)) (Max): 2105 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.47 V
Current - Off State (Max): 120 mA
Supplier Device Package: W70
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 4135 A
Voltage - Off State: 2.8 kV
товару немає в наявності
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IXFN130N90SK
IXFN130N90SK
Виробник: IXYS
Description: SICARBIDE-DISCRETE MOSFET SOT-22
товару немає в наявності
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M1494NK250
Виробник: IXYS
Description: FAST DIODE
товару немає в наявності
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DSEP30-12B media?resourcetype=datasheets&itemid=5be1dfe3-9c2a-4a98-8d2f-e25f24a9a483&filename=littelfuse%2520power%2520semiconductors%2520dsep30-12b%2520datasheet.pdf
DSEP30-12B
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 600V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.75 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товару немає в наявності
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MCB60I1200TZ media?resourcetype=datasheets&itemid=f8cb0642-3abb-46b6-94fa-7b975f84c651&filename=mcb60i1200tz-1623296
Виробник: IXYS
Description: 1200V 90A SIC POWER MOSFET
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id: 4V @ 15mA
Supplier Device Package: TO-268AA (D3Pak-HV)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 1000 V
товару немає в наявності
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N1366JK120 media?resourcetype=datasheets&amp;itemid=a60a062e-c0d3-4818-9ac1-fb4b6acd14fd&amp;filename=littelfuse_discrete_thyristors_phase_control_n1366jk__0_datasheet.pdf
Виробник: IXYS
Description: SCR 1.2KV 2718A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
Current - On State (It (AV)) (Max): 1366 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.99 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2718 A
Voltage - Off State: 1.2 kV
товару немає в наявності
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N1366JK140 media?resourcetype=datasheets&amp;itemid=a60a062e-c0d3-4818-9ac1-fb4b6acd14fd&amp;filename=littelfuse_discrete_thyristors_phase_control_n1366jk__0_datasheet.pdf
Виробник: IXYS
Description: SCR 1.4KV 2718A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
Current - On State (It (AV)) (Max): 1366 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.99 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2718 A
Voltage - Off State: 1.4 kV
товару немає в наявності
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IXFQ60N25X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_60n25x3_datasheet.pdf.pdf
IXFQ60N25X3
Виробник: IXYS
Description: MOSFET N-CHANNEL 250V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V
на замовлення 1713 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+720.47 грн
10+594.58 грн
100+495.49 грн
500+410.30 грн
1000+369.27 грн
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IXGM20N60
Виробник: IXYS
Description: IGBT 600V 40A TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 2mJ (on), 3.2mJ (off)
Test Condition: 480V, 20A, 82Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
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IXGM25N100A littelfuse_discrete_igbts_pt_ixgm25n100a_datasheet.pdf.pdf
Виробник: IXYS
Description: IGBT 1000V 50A 200W TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 5mJ (off)
Test Condition: 800V, 25A, 33Ohm, 15V
Gate Charge: 180 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
товару немає в наявності
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IXTY1N120PTRL
IXTY1N120PTRL
Виробник: IXYS
Description: MOSFET N-CH 1200V 1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 445 pF @ 25 V
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DSP45-12AZ-TUB Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fDSP45-12AZ.pdf
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 45A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 400V, 1MHz
Current - Average Rectified (Io): 45A
Supplier Device Package: TO-268AA (D3Pak-HV)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
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CLA30E1200PB Littelfuse-Power-Semiconductors-CLA30E1200PB-Datasheet?assetguid=a4d05f17-646e-47d1-8dd8-9de3c784ec65
CLA30E1200PB
Виробник: IXYS
Description: SCR 1.2KV 47A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 325A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.59 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220-3
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 1.2 kV
на замовлення 230 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+343.12 грн
50+170.31 грн
100+154.87 грн
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MEK95-06DA Littelfuse-Power-Semiconductors-MEA95-06DA-MEK95-06DA-MEE95-06DA-Datasheet?assetguid=28370ac9-cdbf-432b-9115-f10f0447c92e
MEK95-06DA
Виробник: IXYS
Description: DIODE MODULE GP 600V 95A TO240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
на замовлення 141 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2383.02 грн
36+1477.75 грн
108+1471.95 грн
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N1159NC380
Виробник: IXYS
Description: SCR 3.8KV 2268A W11
товару немає в наявності
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N1159NC420
Виробник: IXYS
Description: SCR 4.2KV 2268A W11
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MEA75-12DA MEA-MEK-MEE_75-12DA.PDF
MEA75-12DA
Виробник: IXYS
Description: DIODE MOD GP 1.2KV 75A TO240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.17 V @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 1200 V
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MEK150-04DA Littelfuse-Power-Semiconductors-MEK150-04DA-Datasheet?assetguid=cdfb7df5-7ced-4bec-863c-29b13272ae6f
MEK150-04DA
Виробник: IXYS
Description: DIODE MOD GP 400V 150A TO-240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 2 mA @ 400 V
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MDD44-16N1B Littelfuse-Power-Semiconductors-MDD44-16N1B-Datasheet?assetguid=472568E2-30F6-4226-80BC-79C3D899C4DC
MDD44-16N1B
Виробник: IXYS
Description: DIODE MOD GP 1600V 64A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2209.32 грн
В кошику  од. на суму  грн.
MDMA660U1600PTEH media?resourcetype=datasheets&itemid=6121d227-b8cc-43e1-b8e1-5fab292cc1a4&filename=littelfuse%2520power%2520semiconductors%2520mdma660u1600pteh%2520datasheet.pdf
Виробник: IXYS
Description: BIPOLARMODULE-BRIDGE RECTIFIER E
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: E3
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 660 A
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 660 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
товару немає в наявності
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MDMA660U1600PT-PC
Виробник: IXYS
Description: MDMA660U1600PTEH-PC
Packaging: Box
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MDMA900U1600PTEH MDMA900U1600PTEH.pdf
MDMA900U1600PTEH
Виробник: IXYS
Description: BIPOLARMODULE-BRIDGE RECTIFIER E
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: E3
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 900 A
Voltage - Forward (Vf) (Max) @ If: 1.92 V @ 900 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
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MDMA900U1600PT-PC
Виробник: IXYS
Description: MDMA900U1600PTEH-PC
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VVZ24-12IO1
Виробник: IXYS
Description: BRIDGE RECT 3 PHASE 1200V 27A
товару немає в наявності
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DMA40U1800GU media?resourcetype=datasheets&itemid=f71e2749-7cb7-4a6d-a573-5ff9e7c0a117&filename=littelfuse%2520power%2520semiconductors%2520dma40u1800gu%2520datasheet.pdf
DMA40U1800GU
Виробник: IXYS
Description: POWER DIODE DISCRETES-RECTIFIER
Packaging: Tube
Package / Case: 5-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: GUFP
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1800 V
на замовлення 130 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1567.57 грн
14+1084.23 грн
112+993.78 грн
В кошику  од. на суму  грн.
DMA90U1800LB-TUB DMA90U1800LB.pdf
Виробник: IXYS
Description: BRIDGE RECT 1P 1.8KV 90A SMPD.B
Packaging: Tube
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Diode Type: Three Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: ISOPLUS-SMPD™.B
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 90 A
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1800 V
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IXGA28N60A3 littelfuse_discrete_igbts_pt_ixg_28n60a3_datasheet.pdf.pdf
IXGA28N60A3
Виробник: IXYS
Description: IGBT
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 24A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/300ns
Switching Energy: 700µJ (on), 2.4mJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 170 A
Power - Max: 190 W
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N1718NC180
Виробник: IXYS
Description: SCR 1.8KV 3450A W11
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
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N1718NC120
Виробник: IXYS
Description: SCR 1.2KV 3450A W11
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MCC95-08I01B
MCC95-08I01B
Виробник: IXYS
Description: DIODE MOD GP 800V 116A TO240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 116A
Supplier Device Package: TO-240AA
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 5 mA @ 800 V
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IXTA110N12T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_110n12t2_datasheet.pdf.pdf
IXTA110N12T2
Виробник: IXYS
Description: MOSFET N-CH 120V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 55A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6570 pF @ 25 V
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IXFH80N65X2-4 littelfuse-discrete-mosfets-ixfh80n65x2-4-datasheet?assetguid=34d5abcd-1798-4a02-af00-91fa7bcec2a9
IXFH80N65X2-4
Виробник: IXYS
Description: MOSFET N-CH 650V 80A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1239.85 грн
30+739.82 грн
120+645.08 грн
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IXXH80N65B4D1 littelfuse-discrete-igbts-ixxh80n65b4d1-datasheet?assetguid=279c11a8-2935-4966-866a-fc76b6081c30
IXXH80N65B4D1
Виробник: IXYS
Description: IGBT PT 650V 180A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/112ns
Switching Energy: 3.36mJ (on), 1.83mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 180 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
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MDD95-16N1B media?resourcetype=datasheets&itemid=787A264D-A97F-47ED-A9E8-A5F7A19F18C1&filename=Littelfuse-Power-Semiconductors-MDD95-16N1B-Datasheet
MDD95-16N1B
Виробник: IXYS
Description: DIODE MOD GP 1600V 120A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 300 A
Current - Reverse Leakage @ Vr: 15 mA @ 1600 V
на замовлення 112 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3189.91 грн
36+2064.57 грн
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IXTN400N15X4 littelfusediscretemosfetsnchannelultrajuncti.pdf
IXTN400N15X4
Виробник: IXYS
Description: MOSFET N-CH 150V 400A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 1070W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
на замовлення 298 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3402.11 грн
10+2467.87 грн
100+2302.03 грн
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IXSK30N60CD1
IXSK30N60CD1
Виробник: IXYS
Description: IGBT 600V 55A 200W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-264AA (IXSK)
Td (on/off) @ 25°C: 30ns/90ns
Switching Energy: 700µJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 200 W
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IXSK30N60BD1
IXSK30N60BD1
Виробник: IXYS
Description: IGBT 600V 55A TO-264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 55A
Supplier Device Package: TO-264AA (IXSK)
Td (on/off) @ 25°C: 30ns/150ns
Switching Energy: 1.5mJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 200 W
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IXYH100N65A3 DS100803IXYH100N65A3.pdf
IXYH100N65A3
Виробник: IXYS
Description: IGBT 650V 240A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 64 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 24ns/174ns
Switching Energy: 3.15mJ (on), 2.2mJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 178 nC
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 470 W
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IXGH120N30B3 littelfuse_discrete_igbts_pt_ixgh120n30b3_datasheet.pdf.pdf
IXGH120N30B3
Виробник: IXYS
Description: IGBT 300V 75A 540W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 120A
Supplier Device Package: TO-247AD
IGBT Type: PT
Gate Charge: 225 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 540 W
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DSP8-08S-TRL DSP8-08S.pdf
DSP8-08S-TRL
Виробник: IXYS
Description: DIODE ARRAY GP 800V 11A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 11A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 7 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
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