Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4070) > Сторінка 23 з 68
| Фото | Назва | Виробник | Інформація |
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| APA750-BG456I | MICROCHIP (MICROSEMI) |
 Category: Programmable circuitsDescription: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 20mA Frequency: 180MHz Mounting: SMD Type of integrated circuit: FPGA Quiescent current: 20mA Number of inputs/outputs: 356 Number of macrocells: 32768 Number of gates: 750k Memory: 144kB RAM Case: PBGA456 Supply voltage: 2.3...2.7V DC |
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| APA750-BGG456 | MICROCHIP (MICROSEMI) |
Category: Programmable circuits Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 15mA Frequency: 180MHz Mounting: SMD Type of integrated circuit: FPGA Quiescent current: 15mA Number of inputs/outputs: 356 Number of macrocells: 32768 Number of gates: 750k Memory: 144kB RAM Case: PBGA456 Supply voltage: 2.3...2.7V DC |
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| APA750-BGG456I | MICROCHIP (MICROSEMI) |
Category: Programmable circuits Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 20mA Frequency: 180MHz Mounting: SMD Type of integrated circuit: FPGA Quiescent current: 20mA Number of inputs/outputs: 356 Number of macrocells: 32768 Number of gates: 750k Memory: 144kB RAM Case: PBGA456 Supply voltage: 2.3...2.7V DC |
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| APA750-PQG208 | MICROCHIP (MICROSEMI) |
Category: Programmable circuits Description: IC: FPGA; SMD; PQFP208; Number of macrocells: 32768; I/O: 158; 15mA Frequency: 180MHz Mounting: SMD Type of integrated circuit: FPGA Quiescent current: 15mA Number of inputs/outputs: 158 Number of macrocells: 32768 Number of gates: 750k Memory: 144kB RAM Case: PQFP208 Supply voltage: 2.3...2.7V DC |
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| APA750-PQG208I | MICROCHIP (MICROSEMI) |
Category: Programmable circuits Description: IC: FPGA; SMD; PQFP208; Number of macrocells: 32768; I/O: 158; 20mA Frequency: 180MHz Mounting: SMD Type of integrated circuit: FPGA Quiescent current: 20mA Number of inputs/outputs: 158 Number of macrocells: 32768 Number of gates: 750k Memory: 144kB RAM Case: PQFP208 Supply voltage: 2.3...2.7V DC |
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| APA750-BG456 | MICROCHIP (MICROSEMI) |
Category: Programmable circuits Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 15mA Frequency: 180MHz Mounting: SMD Type of integrated circuit: FPGA Quiescent current: 15mA Number of inputs/outputs: 356 Number of macrocells: 32768 Number of gates: 750k Memory: 144kB RAM Case: PBGA456 Supply voltage: 2.3...2.7V DC кількість в упаковці: 24 шт |
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| APA750-BG456I | MICROCHIP (MICROSEMI) |
Category: Programmable circuits Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 20mA Frequency: 180MHz Mounting: SMD Type of integrated circuit: FPGA Quiescent current: 20mA Number of inputs/outputs: 356 Number of macrocells: 32768 Number of gates: 750k Memory: 144kB RAM Case: PBGA456 Supply voltage: 2.3...2.7V DC кількість в упаковці: 24 шт |
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| APA750-BGG456 | MICROCHIP (MICROSEMI) |
Category: Programmable circuits Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 15mA Frequency: 180MHz Mounting: SMD Type of integrated circuit: FPGA Quiescent current: 15mA Number of inputs/outputs: 356 Number of macrocells: 32768 Number of gates: 750k Memory: 144kB RAM Case: PBGA456 Supply voltage: 2.3...2.7V DC кількість в упаковці: 24 шт |
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| APA750-BGG456I | MICROCHIP (MICROSEMI) |
Category: Programmable circuits Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 20mA Frequency: 180MHz Mounting: SMD Type of integrated circuit: FPGA Quiescent current: 20mA Number of inputs/outputs: 356 Number of macrocells: 32768 Number of gates: 750k Memory: 144kB RAM Case: PBGA456 Supply voltage: 2.3...2.7V DC кількість в упаковці: 24 шт |
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| APA750-PQG208 | MICROCHIP (MICROSEMI) |
Category: Programmable circuits Description: IC: FPGA; SMD; PQFP208; Number of macrocells: 32768; I/O: 158; 15mA Frequency: 180MHz Mounting: SMD Type of integrated circuit: FPGA Quiescent current: 15mA Number of inputs/outputs: 158 Number of macrocells: 32768 Number of gates: 750k Memory: 144kB RAM Case: PQFP208 Supply voltage: 2.3...2.7V DC кількість в упаковці: 24 шт |
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| APA750-PQG208I | MICROCHIP (MICROSEMI) |
Category: Programmable circuits Description: IC: FPGA; SMD; PQFP208; Number of macrocells: 32768; I/O: 158; 20mA Frequency: 180MHz Mounting: SMD Type of integrated circuit: FPGA Quiescent current: 20mA Number of inputs/outputs: 158 Number of macrocells: 32768 Number of gates: 750k Memory: 144kB RAM Case: PQFP208 Supply voltage: 2.3...2.7V DC кількість в упаковці: 24 шт |
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| APL502B2G | MICROCHIP (MICROSEMI) |
APL502B2G THT N channel transistors |
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| APL502J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 52A; ISOTOP; screw; Idm: 208A; 568W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 208A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 52A On-state resistance: 90mΩ Power dissipation: 568W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: Linear™ Kind of channel: enhanced |
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| APL502J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 52A; ISOTOP; screw; Idm: 208A; 568W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 208A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 52A On-state resistance: 90mΩ Power dissipation: 568W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: Linear™ Kind of channel: enhanced кількість в упаковці: 1 шт |
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APL502LG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Linear™; unipolar; 500V; 58A; Idm: 232A; 730W Drain-source voltage: 500V Drain current: 58A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 730W Polarisation: unipolar Case: TO264 Technology: Linear™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 232A Mounting: THT |
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APL502LG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Linear™; unipolar; 500V; 58A; Idm: 232A; 730W Drain-source voltage: 500V Drain current: 58A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 730W Polarisation: unipolar Case: TO264 Technology: Linear™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 232A Mounting: THT кількість в упаковці: 1 шт |
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| APL602B2G | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Linear™; unipolar; 600V; 49A; Idm: 196A; 730W Type of transistor: N-MOSFET Technology: Linear™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 49A Pulsed drain current: 196A Power dissipation: 730W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Kind of channel: enhanced |
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| APL602B2G | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Linear™; unipolar; 600V; 49A; Idm: 196A; 730W Type of transistor: N-MOSFET Technology: Linear™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 49A Pulsed drain current: 196A Power dissipation: 730W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APL602J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 43A; ISOTOP; screw; Idm: 172A; 565W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 172A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 600V Drain current: 43A On-state resistance: 0.125Ω Power dissipation: 565W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: Linear™ Kind of channel: enhanced |
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| APL602J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 43A; ISOTOP; screw; Idm: 172A; 565W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 172A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 600V Drain current: 43A On-state resistance: 0.125Ω Power dissipation: 565W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: Linear™ Kind of channel: enhanced кількість в упаковці: 1 шт |
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APL602LG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Linear™; unipolar; 600V; 49A; Idm: 196A; 730W Type of transistor: N-MOSFET Technology: Linear™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 49A Pulsed drain current: 196A Power dissipation: 730W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Kind of channel: enhanced |
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APL602LG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Linear™; unipolar; 600V; 49A; Idm: 196A; 730W Type of transistor: N-MOSFET Technology: Linear™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 49A Pulsed drain current: 196A Power dissipation: 730W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT1001R6BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 8A; Idm: 32A; 266W; TO247-3 Case: TO247-3 Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 266W Polarisation: unipolar Gate charge: 55nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 32A Drain-source voltage: 1kV Drain current: 8A On-state resistance: 1.6Ω |
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APT1001R6BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 8A; Idm: 32A; 266W; TO247-3 Case: TO247-3 Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 266W Polarisation: unipolar Gate charge: 55nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 32A Drain-source voltage: 1kV Drain current: 8A On-state resistance: 1.6Ω кількість в упаковці: 1 шт |
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APT1001RBVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A Case: TO247-3 Mounting: THT Technology: POWER MOS 5® Type of transistor: N-MOSFET Power dissipation: 278W Polarisation: unipolar Gate charge: 150nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 44A Drain-source voltage: 1kV Drain current: 11A On-state resistance: 1Ω |
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APT1001RBVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A Case: TO247-3 Mounting: THT Technology: POWER MOS 5® Type of transistor: N-MOSFET Power dissipation: 278W Polarisation: unipolar Gate charge: 150nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 44A Drain-source voltage: 1kV Drain current: 11A On-state resistance: 1Ω кількість в упаковці: 1 шт |
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APT1001RBVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A Case: TO247-3 Mounting: THT Technology: POWER MOS 5® Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Gate charge: 225nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 44A Drain-source voltage: 1kV Drain current: 11A On-state resistance: 1Ω |
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APT1001RBVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A Case: TO247-3 Mounting: THT Technology: POWER MOS 5® Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Gate charge: 225nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 44A Drain-source voltage: 1kV Drain current: 11A On-state resistance: 1Ω кількість в упаковці: 1 шт |
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APT1001RSVRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A Case: D3PAK Mounting: SMD Technology: POWER MOS 5® Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Gate charge: 225nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 44A Drain-source voltage: 1kV Drain current: 11A On-state resistance: 1Ω |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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APT1001RSVRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A Case: D3PAK Mounting: SMD Technology: POWER MOS 5® Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Gate charge: 225nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 44A Drain-source voltage: 1kV Drain current: 11A On-state resistance: 1Ω кількість в упаковці: 1 шт |
на замовлення 26 шт: термін постачання 7-14 дні (днів) |
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| APT10021JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 37A; ISOTOP; screw; Idm: 148A; 694W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 37A Pulsed drain current: 148A Power dissipation: 694W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.21Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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| APT10021JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 37A; ISOTOP; screw; Idm: 148A; 694W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 37A Pulsed drain current: 148A Power dissipation: 694W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.21Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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| APT10021JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 37A; ISOTOP; screw; Idm: 148A; 694W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 37A Pulsed drain current: 148A Power dissipation: 694W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.21Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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| APT10021JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 37A; ISOTOP; screw; Idm: 148A; 694W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 37A Pulsed drain current: 148A Power dissipation: 694W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.21Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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| APT10025JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 34A Pulsed drain current: 136A Power dissipation: 700W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.25Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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| APT10025JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 34A Pulsed drain current: 136A Power dissipation: 700W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.25Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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| APT10025JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 34A Pulsed drain current: 136A Power dissipation: 700W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.25Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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| APT10025JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 34A Pulsed drain current: 136A Power dissipation: 700W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.25Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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| APT10026JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 30A Pulsed drain current: 120A Power dissipation: 595W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.28Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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| APT10026JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 30A Pulsed drain current: 120A Power dissipation: 595W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.28Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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| APT10026JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 30A Pulsed drain current: 120A Power dissipation: 595W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.26Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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| APT10026JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 30A Pulsed drain current: 120A Power dissipation: 595W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.26Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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| APT10026L2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX Case: TO264MAX Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 893W Polarisation: unipolar Gate charge: 267nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 152A Drain-source voltage: 1kV Drain current: 38A On-state resistance: 0.26Ω |
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| APT10026L2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX Case: TO264MAX Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 893W Polarisation: unipolar Gate charge: 267nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 152A Drain-source voltage: 1kV Drain current: 38A On-state resistance: 0.26Ω кількість в упаковці: 1 шт |
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| APT10026L2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX Case: TO264MAX Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 893W Polarisation: unipolar Gate charge: 267nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 152A Drain-source voltage: 1kV Drain current: 38A On-state resistance: 0.26Ω |
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| APT10026L2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX Case: TO264MAX Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 893W Polarisation: unipolar Gate charge: 267nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 152A Drain-source voltage: 1kV Drain current: 38A On-state resistance: 0.26Ω кількість в упаковці: 1 шт |
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| APT10035B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO247MAX Case: TO247MAX Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 690W Polarisation: unipolar Gate charge: 186nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 112A Drain-source voltage: 1kV Drain current: 28A On-state resistance: 370mΩ |
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| APT10035B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO247MAX Case: TO247MAX Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 690W Polarisation: unipolar Gate charge: 186nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 112A Drain-source voltage: 1kV Drain current: 28A On-state resistance: 370mΩ кількість в упаковці: 1 шт |
товар відсутній |
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| APT10035JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 25A Pulsed drain current: 100A Power dissipation: 520W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 370mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |
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| APT10035JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 25A Pulsed drain current: 100A Power dissipation: 520W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 370mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
товар відсутній |
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| APT10035JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 25A Pulsed drain current: 100A Power dissipation: 520W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.35Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |
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| APT10035JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 25A Pulsed drain current: 100A Power dissipation: 520W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.35Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
товар відсутній |
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APT10035LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO264 Case: TO264 Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 690W Polarisation: unipolar Gate charge: 186nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 112A Drain-source voltage: 1kV Drain current: 28A On-state resistance: 370mΩ |
товар відсутній |
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APT10035LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO264 Case: TO264 Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 690W Polarisation: unipolar Gate charge: 186nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 112A Drain-source voltage: 1kV Drain current: 28A On-state resistance: 370mΩ кількість в упаковці: 1 шт |
товар відсутній |
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APT10035LLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO264 Case: TO264 Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 690W Polarisation: unipolar Gate charge: 186nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 112A Drain-source voltage: 1kV Drain current: 28A On-state resistance: 0.35Ω |
товар відсутній |
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APT10035LLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO264 Case: TO264 Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 690W Polarisation: unipolar Gate charge: 186nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 112A Drain-source voltage: 1kV Drain current: 28A On-state resistance: 0.35Ω кількість в упаковці: 1 шт |
товар відсутній |
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APT1003RBFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3 Case: TO247-3 Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 16A Drain-source voltage: 1kV Drain current: 4A On-state resistance: 3Ω |
товар відсутній |
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APT1003RBFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3 Case: TO247-3 Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 16A Drain-source voltage: 1kV Drain current: 4A On-state resistance: 3Ω кількість в упаковці: 1 шт |
товар відсутній |
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APT1003RBLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3 Case: TO247-3 Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 16A Drain-source voltage: 1kV Drain current: 4A On-state resistance: 3Ω |
товар відсутній |
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APT1003RBLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3 Case: TO247-3 Mounting: THT Technology: POWER MOS 7® Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 16A Drain-source voltage: 1kV Drain current: 4A On-state resistance: 3Ω кількість в упаковці: 1 шт |
товар відсутній |
| APA750-BG456I |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 20mA
Frequency: 180MHz
Mounting: SMD
Type of integrated circuit: FPGA
Quiescent current: 20mA
Number of inputs/outputs: 356
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PBGA456
Supply voltage: 2.3...2.7V DC
Category: Programmable circuits
Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 20mA
Frequency: 180MHz
Mounting: SMD
Type of integrated circuit: FPGA
Quiescent current: 20mA
Number of inputs/outputs: 356
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PBGA456
Supply voltage: 2.3...2.7V DC
товар відсутній
| APA750-BGG456 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 15mA
Frequency: 180MHz
Mounting: SMD
Type of integrated circuit: FPGA
Quiescent current: 15mA
Number of inputs/outputs: 356
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PBGA456
Supply voltage: 2.3...2.7V DC
Category: Programmable circuits
Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 15mA
Frequency: 180MHz
Mounting: SMD
Type of integrated circuit: FPGA
Quiescent current: 15mA
Number of inputs/outputs: 356
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PBGA456
Supply voltage: 2.3...2.7V DC
товар відсутній
| APA750-BGG456I |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 20mA
Frequency: 180MHz
Mounting: SMD
Type of integrated circuit: FPGA
Quiescent current: 20mA
Number of inputs/outputs: 356
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PBGA456
Supply voltage: 2.3...2.7V DC
Category: Programmable circuits
Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 20mA
Frequency: 180MHz
Mounting: SMD
Type of integrated circuit: FPGA
Quiescent current: 20mA
Number of inputs/outputs: 356
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PBGA456
Supply voltage: 2.3...2.7V DC
товар відсутній
| APA750-PQG208 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; PQFP208; Number of macrocells: 32768; I/O: 158; 15mA
Frequency: 180MHz
Mounting: SMD
Type of integrated circuit: FPGA
Quiescent current: 15mA
Number of inputs/outputs: 158
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PQFP208
Supply voltage: 2.3...2.7V DC
Category: Programmable circuits
Description: IC: FPGA; SMD; PQFP208; Number of macrocells: 32768; I/O: 158; 15mA
Frequency: 180MHz
Mounting: SMD
Type of integrated circuit: FPGA
Quiescent current: 15mA
Number of inputs/outputs: 158
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PQFP208
Supply voltage: 2.3...2.7V DC
товар відсутній
| APA750-PQG208I |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; PQFP208; Number of macrocells: 32768; I/O: 158; 20mA
Frequency: 180MHz
Mounting: SMD
Type of integrated circuit: FPGA
Quiescent current: 20mA
Number of inputs/outputs: 158
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PQFP208
Supply voltage: 2.3...2.7V DC
Category: Programmable circuits
Description: IC: FPGA; SMD; PQFP208; Number of macrocells: 32768; I/O: 158; 20mA
Frequency: 180MHz
Mounting: SMD
Type of integrated circuit: FPGA
Quiescent current: 20mA
Number of inputs/outputs: 158
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PQFP208
Supply voltage: 2.3...2.7V DC
товар відсутній
| APA750-BG456 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 15mA
Frequency: 180MHz
Mounting: SMD
Type of integrated circuit: FPGA
Quiescent current: 15mA
Number of inputs/outputs: 356
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PBGA456
Supply voltage: 2.3...2.7V DC
кількість в упаковці: 24 шт
Category: Programmable circuits
Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 15mA
Frequency: 180MHz
Mounting: SMD
Type of integrated circuit: FPGA
Quiescent current: 15mA
Number of inputs/outputs: 356
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PBGA456
Supply voltage: 2.3...2.7V DC
кількість в упаковці: 24 шт
товар відсутній
| APA750-BG456I |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 20mA
Frequency: 180MHz
Mounting: SMD
Type of integrated circuit: FPGA
Quiescent current: 20mA
Number of inputs/outputs: 356
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PBGA456
Supply voltage: 2.3...2.7V DC
кількість в упаковці: 24 шт
Category: Programmable circuits
Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 20mA
Frequency: 180MHz
Mounting: SMD
Type of integrated circuit: FPGA
Quiescent current: 20mA
Number of inputs/outputs: 356
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PBGA456
Supply voltage: 2.3...2.7V DC
кількість в упаковці: 24 шт
товар відсутній
| APA750-BGG456 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 15mA
Frequency: 180MHz
Mounting: SMD
Type of integrated circuit: FPGA
Quiescent current: 15mA
Number of inputs/outputs: 356
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PBGA456
Supply voltage: 2.3...2.7V DC
кількість в упаковці: 24 шт
Category: Programmable circuits
Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 15mA
Frequency: 180MHz
Mounting: SMD
Type of integrated circuit: FPGA
Quiescent current: 15mA
Number of inputs/outputs: 356
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PBGA456
Supply voltage: 2.3...2.7V DC
кількість в упаковці: 24 шт
товар відсутній
| APA750-BGG456I |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 20mA
Frequency: 180MHz
Mounting: SMD
Type of integrated circuit: FPGA
Quiescent current: 20mA
Number of inputs/outputs: 356
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PBGA456
Supply voltage: 2.3...2.7V DC
кількість в упаковці: 24 шт
Category: Programmable circuits
Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 20mA
Frequency: 180MHz
Mounting: SMD
Type of integrated circuit: FPGA
Quiescent current: 20mA
Number of inputs/outputs: 356
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PBGA456
Supply voltage: 2.3...2.7V DC
кількість в упаковці: 24 шт
товар відсутній
| APA750-PQG208 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; PQFP208; Number of macrocells: 32768; I/O: 158; 15mA
Frequency: 180MHz
Mounting: SMD
Type of integrated circuit: FPGA
Quiescent current: 15mA
Number of inputs/outputs: 158
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PQFP208
Supply voltage: 2.3...2.7V DC
кількість в упаковці: 24 шт
Category: Programmable circuits
Description: IC: FPGA; SMD; PQFP208; Number of macrocells: 32768; I/O: 158; 15mA
Frequency: 180MHz
Mounting: SMD
Type of integrated circuit: FPGA
Quiescent current: 15mA
Number of inputs/outputs: 158
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PQFP208
Supply voltage: 2.3...2.7V DC
кількість в упаковці: 24 шт
товар відсутній
| APA750-PQG208I |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; PQFP208; Number of macrocells: 32768; I/O: 158; 20mA
Frequency: 180MHz
Mounting: SMD
Type of integrated circuit: FPGA
Quiescent current: 20mA
Number of inputs/outputs: 158
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PQFP208
Supply voltage: 2.3...2.7V DC
кількість в упаковці: 24 шт
Category: Programmable circuits
Description: IC: FPGA; SMD; PQFP208; Number of macrocells: 32768; I/O: 158; 20mA
Frequency: 180MHz
Mounting: SMD
Type of integrated circuit: FPGA
Quiescent current: 20mA
Number of inputs/outputs: 158
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PQFP208
Supply voltage: 2.3...2.7V DC
кількість в упаковці: 24 шт
товар відсутній
| APL502J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 52A; ISOTOP; screw; Idm: 208A; 568W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 208A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 52A
On-state resistance: 90mΩ
Power dissipation: 568W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: Linear™
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 52A; ISOTOP; screw; Idm: 208A; 568W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 208A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 52A
On-state resistance: 90mΩ
Power dissipation: 568W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: Linear™
Kind of channel: enhanced
товар відсутній
| APL502J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 52A; ISOTOP; screw; Idm: 208A; 568W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 208A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 52A
On-state resistance: 90mΩ
Power dissipation: 568W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: Linear™
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 52A; ISOTOP; screw; Idm: 208A; 568W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 208A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 52A
On-state resistance: 90mΩ
Power dissipation: 568W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: Linear™
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APL502LG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear™; unipolar; 500V; 58A; Idm: 232A; 730W
Drain-source voltage: 500V
Drain current: 58A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 730W
Polarisation: unipolar
Case: TO264
Technology: Linear™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 232A
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear™; unipolar; 500V; 58A; Idm: 232A; 730W
Drain-source voltage: 500V
Drain current: 58A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 730W
Polarisation: unipolar
Case: TO264
Technology: Linear™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 232A
Mounting: THT
товар відсутній
| APL502LG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear™; unipolar; 500V; 58A; Idm: 232A; 730W
Drain-source voltage: 500V
Drain current: 58A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 730W
Polarisation: unipolar
Case: TO264
Technology: Linear™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 232A
Mounting: THT
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear™; unipolar; 500V; 58A; Idm: 232A; 730W
Drain-source voltage: 500V
Drain current: 58A
On-state resistance: 90mΩ
Type of transistor: N-MOSFET
Power dissipation: 730W
Polarisation: unipolar
Case: TO264
Technology: Linear™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 232A
Mounting: THT
кількість в упаковці: 1 шт
товар відсутній
| APL602B2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear™; unipolar; 600V; 49A; Idm: 196A; 730W
Type of transistor: N-MOSFET
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 196A
Power dissipation: 730W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear™; unipolar; 600V; 49A; Idm: 196A; 730W
Type of transistor: N-MOSFET
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 196A
Power dissipation: 730W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhanced
товар відсутній
| APL602B2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear™; unipolar; 600V; 49A; Idm: 196A; 730W
Type of transistor: N-MOSFET
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 196A
Power dissipation: 730W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear™; unipolar; 600V; 49A; Idm: 196A; 730W
Type of transistor: N-MOSFET
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 196A
Power dissipation: 730W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APL602J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 43A; ISOTOP; screw; Idm: 172A; 565W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 172A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 43A
On-state resistance: 0.125Ω
Power dissipation: 565W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: Linear™
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 43A; ISOTOP; screw; Idm: 172A; 565W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 172A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 43A
On-state resistance: 0.125Ω
Power dissipation: 565W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: Linear™
Kind of channel: enhanced
товар відсутній
| APL602J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 43A; ISOTOP; screw; Idm: 172A; 565W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 172A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 43A
On-state resistance: 0.125Ω
Power dissipation: 565W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: Linear™
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 43A; ISOTOP; screw; Idm: 172A; 565W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 172A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 43A
On-state resistance: 0.125Ω
Power dissipation: 565W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: Linear™
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APL602LG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear™; unipolar; 600V; 49A; Idm: 196A; 730W
Type of transistor: N-MOSFET
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 196A
Power dissipation: 730W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear™; unipolar; 600V; 49A; Idm: 196A; 730W
Type of transistor: N-MOSFET
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 196A
Power dissipation: 730W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhanced
товар відсутній
| APL602LG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear™; unipolar; 600V; 49A; Idm: 196A; 730W
Type of transistor: N-MOSFET
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 196A
Power dissipation: 730W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear™; unipolar; 600V; 49A; Idm: 196A; 730W
Type of transistor: N-MOSFET
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 196A
Power dissipation: 730W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT1001R6BFLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 8A; Idm: 32A; 266W; TO247-3
Case: TO247-3
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 266W
Polarisation: unipolar
Gate charge: 55nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 32A
Drain-source voltage: 1kV
Drain current: 8A
On-state resistance: 1.6Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 8A; Idm: 32A; 266W; TO247-3
Case: TO247-3
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 266W
Polarisation: unipolar
Gate charge: 55nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 32A
Drain-source voltage: 1kV
Drain current: 8A
On-state resistance: 1.6Ω
товар відсутній
| APT1001R6BFLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 8A; Idm: 32A; 266W; TO247-3
Case: TO247-3
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 266W
Polarisation: unipolar
Gate charge: 55nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 32A
Drain-source voltage: 1kV
Drain current: 8A
On-state resistance: 1.6Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 8A; Idm: 32A; 266W; TO247-3
Case: TO247-3
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 266W
Polarisation: unipolar
Gate charge: 55nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 32A
Drain-source voltage: 1kV
Drain current: 8A
On-state resistance: 1.6Ω
кількість в упаковці: 1 шт
товар відсутній
| APT1001RBVFRG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A
Case: TO247-3
Mounting: THT
Technology: POWER MOS 5®
Type of transistor: N-MOSFET
Power dissipation: 278W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
Drain-source voltage: 1kV
Drain current: 11A
On-state resistance: 1Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A
Case: TO247-3
Mounting: THT
Technology: POWER MOS 5®
Type of transistor: N-MOSFET
Power dissipation: 278W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
Drain-source voltage: 1kV
Drain current: 11A
On-state resistance: 1Ω
товар відсутній
| APT1001RBVFRG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A
Case: TO247-3
Mounting: THT
Technology: POWER MOS 5®
Type of transistor: N-MOSFET
Power dissipation: 278W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
Drain-source voltage: 1kV
Drain current: 11A
On-state resistance: 1Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A
Case: TO247-3
Mounting: THT
Technology: POWER MOS 5®
Type of transistor: N-MOSFET
Power dissipation: 278W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
Drain-source voltage: 1kV
Drain current: 11A
On-state resistance: 1Ω
кількість в упаковці: 1 шт
товар відсутній
| APT1001RBVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A
Case: TO247-3
Mounting: THT
Technology: POWER MOS 5®
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
Drain-source voltage: 1kV
Drain current: 11A
On-state resistance: 1Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A
Case: TO247-3
Mounting: THT
Technology: POWER MOS 5®
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
Drain-source voltage: 1kV
Drain current: 11A
On-state resistance: 1Ω
товар відсутній
| APT1001RBVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A
Case: TO247-3
Mounting: THT
Technology: POWER MOS 5®
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
Drain-source voltage: 1kV
Drain current: 11A
On-state resistance: 1Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A
Case: TO247-3
Mounting: THT
Technology: POWER MOS 5®
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
Drain-source voltage: 1kV
Drain current: 11A
On-state resistance: 1Ω
кількість в упаковці: 1 шт
товар відсутній
| APT1001RSVRG |
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A
Case: D3PAK
Mounting: SMD
Technology: POWER MOS 5®
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
Drain-source voltage: 1kV
Drain current: 11A
On-state resistance: 1Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A
Case: D3PAK
Mounting: SMD
Technology: POWER MOS 5®
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
Drain-source voltage: 1kV
Drain current: 11A
On-state resistance: 1Ω
на замовлення 26 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1399.23 грн |
| 2+ | 1228.88 грн |
| 3+ | 1228.17 грн |
| APT1001RSVRG |
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A
Case: D3PAK
Mounting: SMD
Technology: POWER MOS 5®
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
Drain-source voltage: 1kV
Drain current: 11A
On-state resistance: 1Ω
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A
Case: D3PAK
Mounting: SMD
Technology: POWER MOS 5®
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
Drain-source voltage: 1kV
Drain current: 11A
On-state resistance: 1Ω
кількість в упаковці: 1 шт
на замовлення 26 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1679.07 грн |
| 2+ | 1531.37 грн |
| 3+ | 1473.8 грн |
| APT10021JFLL |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; ISOTOP; screw; Idm: 148A; 694W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 37A
Pulsed drain current: 148A
Power dissipation: 694W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; ISOTOP; screw; Idm: 148A; 694W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 37A
Pulsed drain current: 148A
Power dissipation: 694W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT10021JFLL |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; ISOTOP; screw; Idm: 148A; 694W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 37A
Pulsed drain current: 148A
Power dissipation: 694W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; ISOTOP; screw; Idm: 148A; 694W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 37A
Pulsed drain current: 148A
Power dissipation: 694W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| APT10021JLL |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; ISOTOP; screw; Idm: 148A; 694W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 37A
Pulsed drain current: 148A
Power dissipation: 694W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; ISOTOP; screw; Idm: 148A; 694W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 37A
Pulsed drain current: 148A
Power dissipation: 694W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT10021JLL |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; ISOTOP; screw; Idm: 148A; 694W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 37A
Pulsed drain current: 148A
Power dissipation: 694W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; ISOTOP; screw; Idm: 148A; 694W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 37A
Pulsed drain current: 148A
Power dissipation: 694W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| APT10025JVFR |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 34A
Pulsed drain current: 136A
Power dissipation: 700W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 34A
Pulsed drain current: 136A
Power dissipation: 700W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT10025JVFR |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 34A
Pulsed drain current: 136A
Power dissipation: 700W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 34A
Pulsed drain current: 136A
Power dissipation: 700W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| APT10025JVR |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 34A
Pulsed drain current: 136A
Power dissipation: 700W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 34A
Pulsed drain current: 136A
Power dissipation: 700W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT10025JVR |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 34A
Pulsed drain current: 136A
Power dissipation: 700W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 34A
Pulsed drain current: 136A
Power dissipation: 700W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| APT10026JFLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 595W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 595W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT10026JFLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 595W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 595W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| APT10026JLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 595W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 595W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT10026JLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 595W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 595W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| APT10026L2FLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX
Case: TO264MAX
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 267nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 1kV
Drain current: 38A
On-state resistance: 0.26Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX
Case: TO264MAX
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 267nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 1kV
Drain current: 38A
On-state resistance: 0.26Ω
товар відсутній
| APT10026L2FLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX
Case: TO264MAX
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 267nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 1kV
Drain current: 38A
On-state resistance: 0.26Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX
Case: TO264MAX
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 267nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 1kV
Drain current: 38A
On-state resistance: 0.26Ω
кількість в упаковці: 1 шт
товар відсутній
| APT10026L2LLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX
Case: TO264MAX
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 267nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 1kV
Drain current: 38A
On-state resistance: 0.26Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX
Case: TO264MAX
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 267nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 1kV
Drain current: 38A
On-state resistance: 0.26Ω
товар відсутній
| APT10026L2LLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX
Case: TO264MAX
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 267nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 1kV
Drain current: 38A
On-state resistance: 0.26Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX
Case: TO264MAX
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 267nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 1kV
Drain current: 38A
On-state resistance: 0.26Ω
кількість в упаковці: 1 шт
товар відсутній
| APT10035B2FLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO247MAX
Case: TO247MAX
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 186nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 370mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO247MAX
Case: TO247MAX
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 186nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 370mΩ
товар відсутній
| APT10035B2FLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO247MAX
Case: TO247MAX
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 186nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 370mΩ
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO247MAX
Case: TO247MAX
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 186nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 370mΩ
кількість в упаковці: 1 шт
товар відсутній
| APT10035JFLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 520W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 520W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT10035JFLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 520W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 520W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 370mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| APT10035JLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 520W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 520W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT10035JLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 520W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 25A; ISOTOP; screw; Idm: 100A; 520W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 520W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
кількість в упаковці: 1 шт
товар відсутній
| APT10035LFLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO264
Case: TO264
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 186nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 370mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO264
Case: TO264
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 186nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 370mΩ
товар відсутній
| APT10035LFLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO264
Case: TO264
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 186nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 370mΩ
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO264
Case: TO264
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 186nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 370mΩ
кількість в упаковці: 1 шт
товар відсутній
| APT10035LLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO264
Case: TO264
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 186nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 0.35Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO264
Case: TO264
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 186nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 0.35Ω
товар відсутній
| APT10035LLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO264
Case: TO264
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 186nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 0.35Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO264
Case: TO264
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 186nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 0.35Ω
кількість в упаковці: 1 шт
товар відсутній
| APT1003RBFLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3
Case: TO247-3
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 16A
Drain-source voltage: 1kV
Drain current: 4A
On-state resistance: 3Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3
Case: TO247-3
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 16A
Drain-source voltage: 1kV
Drain current: 4A
On-state resistance: 3Ω
товар відсутній
| APT1003RBFLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3
Case: TO247-3
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 16A
Drain-source voltage: 1kV
Drain current: 4A
On-state resistance: 3Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3
Case: TO247-3
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 16A
Drain-source voltage: 1kV
Drain current: 4A
On-state resistance: 3Ω
кількість в упаковці: 1 шт
товар відсутній
| APT1003RBLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3
Case: TO247-3
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 16A
Drain-source voltage: 1kV
Drain current: 4A
On-state resistance: 3Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3
Case: TO247-3
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 16A
Drain-source voltage: 1kV
Drain current: 4A
On-state resistance: 3Ω
товар відсутній
| APT1003RBLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3
Case: TO247-3
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 16A
Drain-source voltage: 1kV
Drain current: 4A
On-state resistance: 3Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3
Case: TO247-3
Mounting: THT
Technology: POWER MOS 7®
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 16A
Drain-source voltage: 1kV
Drain current: 4A
On-state resistance: 3Ω
кількість в упаковці: 1 шт
товар відсутній