Продукція > ONSEMI > Всі товари виробника ONSEMI (147502) > Сторінка 2450 з 2459

Обрати Сторінку:   [  << Попередня Сторінка ]  1 245 490 735 980 1225 1470 1715 1960 2205 2445 2446 2447 2448 2449 2450 2451 2452 2453 2454 2455 2459  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
SZNUP2124MXWTBG ONSEMI sznup2124-d.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 26÷33V; bidirectional; XDFNW3; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Case: XDFNW3
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Breakdown voltage: 26...33V
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
SZNUP2128WTT1G ONSEMI Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 27.5÷35.5V; bidirectional; SC70; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Case: SC70
Max. off-state voltage: 26.5V
Semiconductor structure: bidirectional
Breakdown voltage: 27.5...35.5V
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
FDMC86259P ONSEMI fdmc86259p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; Idm: -20A; 62W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Pulsed drain current: -20A
Power dissipation: 62W
Case: Power33
Gate-source voltage: ±25V
On-state resistance: 178mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
HGTD1N120BNS9A ONSEMI hgtd1n120bns-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 2.7A; 60W; DPAK
Case: DPAK
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 2.7A
Pulsed collector current: 6A
Type of transistor: IGBT
Power dissipation: 60W
Kind of package: reel; tape
Gate charge: 21nC
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
FJV992FMTF FJV992FMTF ONSEMI fjv992-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 120V; 0.05A; 0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 50mA
Power dissipation: 0.3W
Case: SOT23; TO236AB
Current gain: 300...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
товару немає в наявності
В кошику  од. на суму  грн.
MOC3010M MOC3010M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F9130F580C7&compId=MOC3010M.pdf?ci_sign=0b1d642be81fd7cbf43484641c53c0c34b78cd40 Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; DIP6; Ch: 1; MOC301XM
Manufacturer series: MOC301XM
Case: DIP6
Max. off-state voltage: 3V
Output voltage: 250V
Number of channels: 1
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 4.17kV
Trigger current: 15mA
Type of optocoupler: optotriac
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
MOC3010SM ONSEMI FAIR-S-A0002364096-1.pdf?t.download=true&u=5oefqw moc3023m-d.pdf MOC3009_MOC3012Data.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; PDIP6; Ch: 1; MOC301XM; 1kV/μs
Manufacturer series: MOC301XM
Case: PDIP6
Max. off-state voltage: 3V
Output voltage: 250V
Number of channels: 1
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 4.17kV
Trigger current: 15mA
Slew rate: 1kV/μs
Type of optocoupler: optotriac
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
KSB1151YS ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE33CE660B280D6&compId=KSB1151.pdf?ci_sign=af30fdfbb10fe21d972f1ea0040afdf92eba72e2 Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.3W
Case: TO126ISO
Current gain: 160...320
Mounting: THT
Kind of package: bulk
Pulsed collector current: 8A
товару немає в наявності
В кошику  од. на суму  грн.
KSB1151YSTU ONSEMI ksb1151-d.pdf FAIRS21120-1.pdf?t.download=true&u=5oefqw Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.3W
Case: TO126ISO
Current gain: 160...320
Mounting: THT
Kind of package: tube
Pulsed collector current: 8A
товару немає в наявності
В кошику  од. на суму  грн.
MMBT2369LT1G MMBT2369LT1G ONSEMI mmbt2369lt1-d.pdf description Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 20...120
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
SMMBT2369ALT1G ONSEMI mmbt2369lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
FDB52N20TM FDB52N20TM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECDEA43EA443E28&compId=FDB52N20.pdf?ci_sign=d43ba8033692a45b011f90f2143d2d3cb4d93be8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 52A; 357W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 52A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: UniFET™
на замовлення 438 шт:
термін постачання 21-30 дні (днів)
3+150.20 грн
5+124.15 грн
9+107.29 грн
24+101.92 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FDMS86255ET150 ONSEMI fdms86255et150-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 44A; Idm: 276A; 136W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 44A
Power dissipation: 136W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 276A
товару немає в наявності
В кошику  од. на суму  грн.
GBU8K GBU8K ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DE713AB1AC0D2&compId=GBU8x.PDF?ci_sign=63a491fd3336a9901eac8f0e730e20dcde9b00fa Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 521 шт:
термін постачання 21-30 дні (днів)
4+113.06 грн
5+94.26 грн
13+72.04 грн
35+68.20 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
GBU8J GBU8J ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DE713AB1AC0D2&compId=GBU8x.PDF?ci_sign=63a491fd3336a9901eac8f0e730e20dcde9b00fa Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+412.64 грн
В кошику  од. на суму  грн.
GBU6K GBU6K ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 798 шт:
термін постачання 21-30 дні (днів)
4+136.17 грн
10+72.80 грн
17+53.64 грн
47+50.58 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
GBU6G GBU6G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
GBU6A GBU6A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
GBU6B GBU6B ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
GBU6D GBU6D ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
GBU6J GBU6J ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
FDB0190N807L FDB0190N807L ONSEMI fdb0190n807l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6
Mounting: SMD
Gate charge: 249nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.44kA
Case: D2PAK-6
Drain-source voltage: 80V
Drain current: 190A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: reel; tape
на замовлення 800 шт:
термін постачання 21-30 дні (днів)
1+415.12 грн
4+276.65 грн
9+261.32 грн
800+256.72 грн
В кошику  од. на суму  грн.
MMSZ5231B ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
товару немає в наявності
В кошику  од. на суму  грн.
SZMMSZ5231BT1G SZMMSZ5231BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Semiconductor structure: single diode
Zener voltage: 5.1V
Tolerance: ±5%
Application: automotive industry
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMSZ52xxB
на замовлення 2718 шт:
термін постачання 21-30 дні (днів)
27+15.68 грн
36+10.88 грн
44+8.89 грн
59+6.53 грн
100+4.20 грн
573+4.08 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
KSP92BU ONSEMI ksp92-d.pdf FAIRS18882-1.pdf?t.download=true&u=5oefqw Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Current gain: 40
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
на замовлення 9860 шт:
термін постачання 21-30 дні (днів)
36+11.55 грн
51+7.59 грн
100+5.55 грн
213+4.24 грн
585+4.01 грн
2000+3.85 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
KSP92TA KSP92TA ONSEMI ksp92-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 40
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
товару немає в наявності
В кошику  од. на суму  грн.
NCV8440ASTT1G ONSEMI ncv8440-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 52V; 2.6A; Idm: 10A; 1.69W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 52V
Power dissipation: 1.69W
Polarisation: unipolar
Version: ESD
Gate charge: 4.5nC
Gate-source voltage: ±15V
Pulsed drain current: 10A
Type of transistor: N-MOSFET
On-state resistance: 0.18Ω
Drain current: 2.6A
товару немає в наявності
В кошику  од. на суму  грн.
1N5282TR ONSEMI 1n5282-d.pdf FAIRS28582-1.pdf?t.download=true&u=5oefqw Category: THT universal diodes
Description: Diode: switching; THT; 80V; 0.2A; reel,tape; DO35
Case: DO35
Max. off-state voltage: 80V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: small signal
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
2N7000 2N7000 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84E58CC03277C0D2&compId=2N7000_2N7002_NDS7002A.PDF?ci_sign=0fd71bfe4fa8b72f11e37dab9fdebe94573526a9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
на замовлення 5401 шт:
термін постачання 21-30 дні (днів)
13+33.84 грн
17+22.61 грн
25+17.78 грн
94+9.50 грн
259+8.97 грн
1000+8.74 грн
5000+8.66 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
CAT25020VI-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C45C703A0D5&compId=CAT25010-D.pdf?ci_sign=43313a4e9a1143d1146313810913a564e0e78966 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz; SOIC8
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 256x8bit
Clock frequency: 20MHz
Kind of interface: serial
Memory: 2kb EEPROM
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
CAT25020YI-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C45C704E0D5&compId=CAT25010-D.pdf?ci_sign=58ae57f94dd6eb24ebbcd72edfd458cad1bd3cab Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 256x8bit
Clock frequency: 20MHz
Kind of interface: serial
Memory: 2kb EEPROM
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
CAV25020YE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB83220D5&compId=CAV25020.pdf?ci_sign=b6e439923b8f01c87edb736106fa58c5bf81f8b4 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 2.5÷5.5V; 10MHz
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 256x8bit
Access time: 35ns
Clock frequency: 10MHz
Kind of interface: serial
Memory: 2kb EEPROM
Operating temperature: -40...125°C
товару немає в наявності
В кошику  од. на суму  грн.
BZX84C6V2LT1G BZX84C6V2LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
на замовлення 5023 шт:
термін постачання 21-30 дні (днів)
55+7.54 грн
100+3.83 грн
114+3.37 грн
137+2.80 грн
152+2.54 грн
163+2.35 грн
823+1.10 грн
2261+1.03 грн
Мінімальне замовлення: 55
В кошику  од. на суму  грн.
SZBZX84C6V2LT1G SZBZX84C6V2LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
Application: automotive industry
на замовлення 2725 шт:
термін постачання 21-30 дні (днів)
39+10.73 грн
62+6.21 грн
118+3.26 грн
500+2.20 грн
535+1.68 грн
1472+1.59 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
SZBZX84C6V2ET1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
BZX84B6V2LT1G BZX84B6V2LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84B
на замовлення 4740 шт:
термін постачання 21-30 дні (днів)
46+9.08 грн
63+6.13 грн
94+4.08 грн
113+3.42 грн
478+1.89 грн
1312+1.79 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
SZBZX84B6V2LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84B
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
NDB5060L ONSEMI ndb5060l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; Idm: 78A; 68W; D2PAK-3
Mounting: SMD
Case: D2PAK-3
Drain-source voltage: 60V
Drain current: 26A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 78A
товару немає в наявності
В кошику  од. на суму  грн.
MC14025BDG MC14025BDG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e description Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: triple; 3
Delay time: 130ns
Kind of package: tube
Kind of gate: NOR
Technology: CMOS
Family: HEF4000B
Mounting: SMD
Case: SO14
Number of inputs: 3
Supply voltage: 3...18V DC
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
6+70.15 грн
11+37.78 грн
25+29.89 грн
40+22.53 грн
110+21.30 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
GBU4M GBU4M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DA2D0D663A0D2&compId=GBU4x.PDF?ci_sign=c484993c04cddfef427267792371b43350125246 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
FCA20N60-F109 ONSEMI fca20n60_f109-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 208W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 75nC
Pulsed drain current: 60A
товару немає в наявності
В кошику  од. на суму  грн.
FCMT360N65S3 ONSEMI fcmt360n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; PQFN4
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 83W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 18nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: PQFN4
Pulsed drain current: 25A
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 0.36Ω
товару немає в наявності
В кошику  од. на суму  грн.
BCW30LT1G
+1
 		BCW30LT1G ONSEMI bcw30lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 215...500
Mounting: SMD
Kind of package: reel; tape
на замовлення 5515 шт:
термін постачання 21-30 дні (днів)
34+12.38 грн
59+6.51 грн
85+4.52 грн
100+3.89 грн
372+2.42 грн
1000+2.31 грн
1023+2.29 грн
3000+2.21 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
SBCW30LT1G SBCW30LT1G ONSEMI bcw30lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 215...500
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
FDD5N50NZTM ONSEMI fdd5n50nz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; Idm: 16A; 62W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 62W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
FJPF2145TU FJPF2145TU ONSEMI FAIRS44794-1.pdf?t.download=true&u=5oefqw Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 5A; 40W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 800V
Collector current: 5A
Power dissipation: 40W
Case: TO220FP
Current gain: 20...40
Mounting: THT
Kind of package: tube
Frequency: 15MHz
товару немає в наявності
В кошику  од. на суму  грн.
LM2575D2T-ADJR4G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED68AAB2A8FFD09BE21&compId=LM2575-ON-DTE.PDF?ci_sign=91792adb27eab164ca8ff9fb230c949c2520fd88 Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
LM2575D2T-ADJG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED68AAB2A8FFD09BE21&compId=LM2575-ON-DTE.PDF?ci_sign=91792adb27eab164ca8ff9fb230c949c2520fd88 Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
FL7760AM6X FL7760AM6X ONSEMI fl7760-d.pdf Category: Voltage regulators - PWM circuits
Description: PMIC; DC/DC converter,LED driver; Uin: 8÷70V; -2.5÷1.5A; SOT23-6
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Case: SOT23-6
Output current: -2.5...1.5A
Number of channels: 1
Mounting: SMD
Input voltage: 8...70V
Application: for LED applications
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Topology: buck
Frequency: 1MHz
товару немає в наявності
В кошику  од. на суму  грн.
MMBFJ175 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A9B12C0BFE9CBE27&compId=MMBFJ17X-DTE.pdf?ci_sign=7faeb449ab6ec932f48342f39e9dacba4889197f Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 7mA
Power dissipation: 0.225W
Case: SOT23
On-state resistance: 125Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Gate-source voltage: 30V
товару немає в наявності
В кошику  од. на суму  грн.
J176-D74Z ONSEMI j175-d.pdf Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.35W; TO92; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.35W
Case: TO92
Gate-source voltage: 30V
On-state resistance: 250Ω
Mounting: THT
Kind of package: Ammo Pack
Gate current: 50mA
товару немає в наявності
В кошику  од. на суму  грн.
MC14007UBDG MC14007UBDG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE598B9585FC2DAA11C&compId=MC14007UBDG.PDF?ci_sign=9de9de01acd654fceed287c2879e2eba6d6ff3b6 Category: Gates, inverters
Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD
Mounting: SMD
Case: SO14
Kind of package: tube
Type of integrated circuit: digital
Number of channels: dual; 2
Quiescent current: 30µA
Kind of gate: combination; NOT
Technology: CMOS
Kind of integrated circuit: complementary pair
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
на замовлення 129 шт:
термін постачання 21-30 дні (днів)
13+33.01 грн
15+26.90 грн
46+20.00 грн
110+19.16 грн
124+18.93 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
NTHL160N120SC1 NTHL160N120SC1 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB9C13DAA45B960C7&compId=NTHL160N120SC1.PDF?ci_sign=c717d8e84721511fa32e0a71bba611e3703b0361 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 12A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 59W
Polarisation: unipolar
Kind of package: tube
Gate charge: 34nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -15...25V
Pulsed drain current: 69A
Case: TO247-3
товару немає в наявності
В кошику  од. на суму  грн.
NCP170AMX150TCG ONSEMI ncp170-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 150mA; XDFN4; SMD
Output voltage: 1.5V
Output current: 0.15A
Manufacturer series: NCP170
Operating temperature: -40...85°C
Type of integrated circuit: voltage regulator
Number of channels: 1
Tolerance: ±1%
Input voltage: 2.2...5.5V
Case: XDFN4
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
товару немає в наявності
В кошику  од. на суму  грн.
NCP170ASN150T2G ONSEMI ncp170-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 150mA; TSOP5; SMD
Output voltage: 1.5V
Output current: 0.15A
Manufacturer series: NCP170
Operating temperature: -40...85°C
Type of integrated circuit: voltage regulator
Number of channels: 1
Tolerance: ±1%
Input voltage: 2.2...5.5V
Case: TSOP5
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
товару немає в наявності
В кошику  од. на суму  грн.
FCD1300N80Z ONSEMI fcd1300n80z-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 12A; 52W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 12A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Gate charge: 16.2nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
74LVX132MTCX 74LVX132MTCX ONSEMI 74lvx132-d.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Case: TSSOP14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: quad; 4
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Kind of gate: NAND
Family: LVX
Number of inputs: 2
Supply voltage: 2...3.6V DC
на замовлення 734 шт:
термін постачання 21-30 дні (днів)
10+43.74 грн
16+24.98 грн
25+20.61 грн
54+16.71 грн
100+15.71 грн
250+15.17 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
74LVX132MX 74LVX132MX ONSEMI 74lvx132-d.pdf FAIRS26108-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: quad; 4
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Kind of gate: NAND
Family: LVX
Number of inputs: 2
Supply voltage: 2...3.6V DC
товару немає в наявності
В кошику  од. на суму  грн.
NSPU5132MUTBG ONSEMI nspu5132-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 15.5V; unidirectional; uDFN6; reel,tape
Case: uDFN6
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 13.5V
Semiconductor structure: unidirectional
Breakdown voltage: 15.5V
Type of diode: TVS
товару немає в наявності
В кошику  од. на суму  грн.
NCV21872DMR2G ONSEMI ncs21871-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 270kHz; Micro8; 1.8÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 270kHz
Mounting: SMT
Case: Micro8
Slew rate: 0.1V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.045mV
Voltage supply range: 1.8...5.5V DC
Kind of package: reel; tape
Input bias current: 0.4nA
Input offset current: 800pA
Number of channels: dual
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
5+94.91 грн
10+48.05 грн
25+40.00 грн
33+27.36 грн
91+25.90 грн
2500+25.52 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SZNUP2124MXWTBG sznup2124-d.pdf
Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 26÷33V; bidirectional; XDFNW3; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Case: XDFNW3
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Breakdown voltage: 26...33V
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
SZNUP2128WTT1G
Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 27.5÷35.5V; bidirectional; SC70; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Case: SC70
Max. off-state voltage: 26.5V
Semiconductor structure: bidirectional
Breakdown voltage: 27.5...35.5V
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
FDMC86259P fdmc86259p-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; Idm: -20A; 62W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Pulsed drain current: -20A
Power dissipation: 62W
Case: Power33
Gate-source voltage: ±25V
On-state resistance: 178mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
HGTD1N120BNS9A hgtd1n120bns-d.pdf
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 2.7A; 60W; DPAK
Case: DPAK
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 2.7A
Pulsed collector current: 6A
Type of transistor: IGBT
Power dissipation: 60W
Kind of package: reel; tape
Gate charge: 21nC
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
FJV992FMTF fjv992-d.pdf
FJV992FMTF
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 120V; 0.05A; 0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 50mA
Power dissipation: 0.3W
Case: SOT23; TO236AB
Current gain: 300...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
товару немає в наявності
В кошику  од. на суму  грн.
MOC3010M pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F9130F580C7&compId=MOC3010M.pdf?ci_sign=0b1d642be81fd7cbf43484641c53c0c34b78cd40
MOC3010M
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; DIP6; Ch: 1; MOC301XM
Manufacturer series: MOC301XM
Case: DIP6
Max. off-state voltage: 3V
Output voltage: 250V
Number of channels: 1
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 4.17kV
Trigger current: 15mA
Type of optocoupler: optotriac
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
MOC3010SM FAIR-S-A0002364096-1.pdf?t.download=true&u=5oefqw moc3023m-d.pdf MOC3009_MOC3012Data.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; PDIP6; Ch: 1; MOC301XM; 1kV/μs
Manufacturer series: MOC301XM
Case: PDIP6
Max. off-state voltage: 3V
Output voltage: 250V
Number of channels: 1
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 4.17kV
Trigger current: 15mA
Slew rate: 1kV/μs
Type of optocoupler: optotriac
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
KSB1151YS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE33CE660B280D6&compId=KSB1151.pdf?ci_sign=af30fdfbb10fe21d972f1ea0040afdf92eba72e2
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.3W
Case: TO126ISO
Current gain: 160...320
Mounting: THT
Kind of package: bulk
Pulsed collector current: 8A
товару немає в наявності
В кошику  од. на суму  грн.
KSB1151YSTU ksb1151-d.pdf FAIRS21120-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.3W
Case: TO126ISO
Current gain: 160...320
Mounting: THT
Kind of package: tube
Pulsed collector current: 8A
товару немає в наявності
В кошику  од. на суму  грн.
MMBT2369LT1G description mmbt2369lt1-d.pdf
MMBT2369LT1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 20...120
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
SMMBT2369ALT1G mmbt2369lt1-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
FDB52N20TM pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECDEA43EA443E28&compId=FDB52N20.pdf?ci_sign=d43ba8033692a45b011f90f2143d2d3cb4d93be8
FDB52N20TM
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 52A; 357W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 52A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: UniFET™
на замовлення 438 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+150.20 грн
5+124.15 грн
9+107.29 грн
24+101.92 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FDMS86255ET150 fdms86255et150-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 44A; Idm: 276A; 136W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 44A
Power dissipation: 136W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 276A
товару немає в наявності
В кошику  од. на суму  грн.
GBU8K pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DE713AB1AC0D2&compId=GBU8x.PDF?ci_sign=63a491fd3336a9901eac8f0e730e20dcde9b00fa
GBU8K
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 521 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+113.06 грн
5+94.26 грн
13+72.04 грн
35+68.20 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
GBU8J pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DE713AB1AC0D2&compId=GBU8x.PDF?ci_sign=63a491fd3336a9901eac8f0e730e20dcde9b00fa
GBU8J
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+412.64 грн
В кошику  од. на суму  грн.
GBU6K pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5
GBU6K
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 798 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+136.17 грн
10+72.80 грн
17+53.64 грн
47+50.58 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
GBU6G pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5
GBU6G
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
GBU6A pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5
GBU6A
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
GBU6B pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5
GBU6B
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
GBU6D pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5
GBU6D
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
GBU6J pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5
GBU6J
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
FDB0190N807L fdb0190n807l-d.pdf
FDB0190N807L
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6
Mounting: SMD
Gate charge: 249nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.44kA
Case: D2PAK-6
Drain-source voltage: 80V
Drain current: 190A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: reel; tape
на замовлення 800 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+415.12 грн
4+276.65 грн
9+261.32 грн
800+256.72 грн
В кошику  од. на суму  грн.
MMSZ5231B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
товару немає в наявності
В кошику  од. на суму  грн.
SZMMSZ5231BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
SZMMSZ5231BT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Semiconductor structure: single diode
Zener voltage: 5.1V
Tolerance: ±5%
Application: automotive industry
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMSZ52xxB
на замовлення 2718 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
27+15.68 грн
36+10.88 грн
44+8.89 грн
59+6.53 грн
100+4.20 грн
573+4.08 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
KSP92BU ksp92-d.pdf FAIRS18882-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Current gain: 40
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
на замовлення 9860 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+11.55 грн
51+7.59 грн
100+5.55 грн
213+4.24 грн
585+4.01 грн
2000+3.85 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
KSP92TA ksp92-d.pdf
KSP92TA
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 40
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
товару немає в наявності
В кошику  од. на суму  грн.
NCV8440ASTT1G ncv8440-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 52V; 2.6A; Idm: 10A; 1.69W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 52V
Power dissipation: 1.69W
Polarisation: unipolar
Version: ESD
Gate charge: 4.5nC
Gate-source voltage: ±15V
Pulsed drain current: 10A
Type of transistor: N-MOSFET
On-state resistance: 0.18Ω
Drain current: 2.6A
товару немає в наявності
В кошику  од. на суму  грн.
1N5282TR 1n5282-d.pdf FAIRS28582-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 80V; 0.2A; reel,tape; DO35
Case: DO35
Max. off-state voltage: 80V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: small signal
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
2N7000 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84E58CC03277C0D2&compId=2N7000_2N7002_NDS7002A.PDF?ci_sign=0fd71bfe4fa8b72f11e37dab9fdebe94573526a9
2N7000
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
на замовлення 5401 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+33.84 грн
17+22.61 грн
25+17.78 грн
94+9.50 грн
259+8.97 грн
1000+8.74 грн
5000+8.66 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
CAT25020VI-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C45C703A0D5&compId=CAT25010-D.pdf?ci_sign=43313a4e9a1143d1146313810913a564e0e78966
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz; SOIC8
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 256x8bit
Clock frequency: 20MHz
Kind of interface: serial
Memory: 2kb EEPROM
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
CAT25020YI-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C45C704E0D5&compId=CAT25010-D.pdf?ci_sign=58ae57f94dd6eb24ebbcd72edfd458cad1bd3cab
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 256x8bit
Clock frequency: 20MHz
Kind of interface: serial
Memory: 2kb EEPROM
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
CAV25020YE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB83220D5&compId=CAV25020.pdf?ci_sign=b6e439923b8f01c87edb736106fa58c5bf81f8b4
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 2.5÷5.5V; 10MHz
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 256x8bit
Access time: 35ns
Clock frequency: 10MHz
Kind of interface: serial
Memory: 2kb EEPROM
Operating temperature: -40...125°C
товару немає в наявності
В кошику  од. на суму  грн.
BZX84C6V2LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
BZX84C6V2LT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
на замовлення 5023 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
55+7.54 грн
100+3.83 грн
114+3.37 грн
137+2.80 грн
152+2.54 грн
163+2.35 грн
823+1.10 грн
2261+1.03 грн
Мінімальне замовлення: 55
В кошику  од. на суму  грн.
SZBZX84C6V2LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
SZBZX84C6V2LT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
Application: automotive industry
на замовлення 2725 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+10.73 грн
62+6.21 грн
118+3.26 грн
500+2.20 грн
535+1.68 грн
1472+1.59 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
SZBZX84C6V2ET1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
BZX84B6V2LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
BZX84B6V2LT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84B
на замовлення 4740 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
46+9.08 грн
63+6.13 грн
94+4.08 грн
113+3.42 грн
478+1.89 грн
1312+1.79 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
SZBZX84B6V2LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84B
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
NDB5060L ndb5060l-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; Idm: 78A; 68W; D2PAK-3
Mounting: SMD
Case: D2PAK-3
Drain-source voltage: 60V
Drain current: 26A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 78A
товару немає в наявності
В кошику  од. на суму  грн.
MC14025BDG description pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e
MC14025BDG
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: triple; 3
Delay time: 130ns
Kind of package: tube
Kind of gate: NOR
Technology: CMOS
Family: HEF4000B
Mounting: SMD
Case: SO14
Number of inputs: 3
Supply voltage: 3...18V DC
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+70.15 грн
11+37.78 грн
25+29.89 грн
40+22.53 грн
110+21.30 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
GBU4M pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DA2D0D663A0D2&compId=GBU4x.PDF?ci_sign=c484993c04cddfef427267792371b43350125246
GBU4M
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику  од. на суму  грн.
FCA20N60-F109 fca20n60_f109-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 208W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 75nC
Pulsed drain current: 60A
товару немає в наявності
В кошику  од. на суму  грн.
FCMT360N65S3 fcmt360n65s3-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; PQFN4
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 83W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 18nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: PQFN4
Pulsed drain current: 25A
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 0.36Ω
товару немає в наявності
В кошику  од. на суму  грн.
BCW30LT1G bcw30lt1-d.pdf
BCW30LT1G
+1
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 215...500
Mounting: SMD
Kind of package: reel; tape
на замовлення 5515 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
34+12.38 грн
59+6.51 грн
85+4.52 грн
100+3.89 грн
372+2.42 грн
1000+2.31 грн
1023+2.29 грн
3000+2.21 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
SBCW30LT1G bcw30lt1-d.pdf
SBCW30LT1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 215...500
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
FDD5N50NZTM fdd5n50nz-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; Idm: 16A; 62W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 62W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
FJPF2145TU FAIRS44794-1.pdf?t.download=true&u=5oefqw
FJPF2145TU
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 5A; 40W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 800V
Collector current: 5A
Power dissipation: 40W
Case: TO220FP
Current gain: 20...40
Mounting: THT
Kind of package: tube
Frequency: 15MHz
товару немає в наявності
В кошику  од. на суму  грн.
LM2575D2T-ADJR4G pVersion=0046&contRep=ZT&docId=005056AB752F1ED68AAB2A8FFD09BE21&compId=LM2575-ON-DTE.PDF?ci_sign=91792adb27eab164ca8ff9fb230c949c2520fd88
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
LM2575D2T-ADJG pVersion=0046&contRep=ZT&docId=005056AB752F1ED68AAB2A8FFD09BE21&compId=LM2575-ON-DTE.PDF?ci_sign=91792adb27eab164ca8ff9fb230c949c2520fd88
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
FL7760AM6X fl7760-d.pdf
FL7760AM6X
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: PMIC; DC/DC converter,LED driver; Uin: 8÷70V; -2.5÷1.5A; SOT23-6
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Case: SOT23-6
Output current: -2.5...1.5A
Number of channels: 1
Mounting: SMD
Input voltage: 8...70V
Application: for LED applications
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Topology: buck
Frequency: 1MHz
товару немає в наявності
В кошику  од. на суму  грн.
MMBFJ175 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A9B12C0BFE9CBE27&compId=MMBFJ17X-DTE.pdf?ci_sign=7faeb449ab6ec932f48342f39e9dacba4889197f
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 7mA
Power dissipation: 0.225W
Case: SOT23
On-state resistance: 125Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Gate-source voltage: 30V
товару немає в наявності
В кошику  од. на суму  грн.
J176-D74Z j175-d.pdf
Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.35W; TO92; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.35W
Case: TO92
Gate-source voltage: 30V
On-state resistance: 250Ω
Mounting: THT
Kind of package: Ammo Pack
Gate current: 50mA
товару немає в наявності
В кошику  од. на суму  грн.
MC14007UBDG pVersion=0046&contRep=ZT&docId=005056AB752F1EE598B9585FC2DAA11C&compId=MC14007UBDG.PDF?ci_sign=9de9de01acd654fceed287c2879e2eba6d6ff3b6
MC14007UBDG
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD
Mounting: SMD
Case: SO14
Kind of package: tube
Type of integrated circuit: digital
Number of channels: dual; 2
Quiescent current: 30µA
Kind of gate: combination; NOT
Technology: CMOS
Kind of integrated circuit: complementary pair
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
на замовлення 129 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+33.01 грн
15+26.90 грн
46+20.00 грн
110+19.16 грн
124+18.93 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
NTHL160N120SC1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB9C13DAA45B960C7&compId=NTHL160N120SC1.PDF?ci_sign=c717d8e84721511fa32e0a71bba611e3703b0361
NTHL160N120SC1
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 12A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 59W
Polarisation: unipolar
Kind of package: tube
Gate charge: 34nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -15...25V
Pulsed drain current: 69A
Case: TO247-3
товару немає в наявності
В кошику  од. на суму  грн.
NCP170AMX150TCG ncp170-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 150mA; XDFN4; SMD
Output voltage: 1.5V
Output current: 0.15A
Manufacturer series: NCP170
Operating temperature: -40...85°C
Type of integrated circuit: voltage regulator
Number of channels: 1
Tolerance: ±1%
Input voltage: 2.2...5.5V
Case: XDFN4
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
товару немає в наявності
В кошику  од. на суму  грн.
NCP170ASN150T2G ncp170-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 150mA; TSOP5; SMD
Output voltage: 1.5V
Output current: 0.15A
Manufacturer series: NCP170
Operating temperature: -40...85°C
Type of integrated circuit: voltage regulator
Number of channels: 1
Tolerance: ±1%
Input voltage: 2.2...5.5V
Case: TSOP5
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
товару немає в наявності
В кошику  од. на суму  грн.
FCD1300N80Z fcd1300n80z-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 12A; 52W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 12A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Gate charge: 16.2nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
74LVX132MTCX 74lvx132-d.pdf
74LVX132MTCX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Case: TSSOP14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: quad; 4
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Kind of gate: NAND
Family: LVX
Number of inputs: 2
Supply voltage: 2...3.6V DC
на замовлення 734 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+43.74 грн
16+24.98 грн
25+20.61 грн
54+16.71 грн
100+15.71 грн
250+15.17 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
74LVX132MX 74lvx132-d.pdf FAIRS26108-1.pdf?t.download=true&u=5oefqw
74LVX132MX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: quad; 4
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Kind of gate: NAND
Family: LVX
Number of inputs: 2
Supply voltage: 2...3.6V DC
товару немає в наявності
В кошику  од. на суму  грн.
NSPU5132MUTBG nspu5132-d.pdf
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 15.5V; unidirectional; uDFN6; reel,tape
Case: uDFN6
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 13.5V
Semiconductor structure: unidirectional
Breakdown voltage: 15.5V
Type of diode: TVS
товару немає в наявності
В кошику  од. на суму  грн.
NCV21872DMR2G ncs21871-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 270kHz; Micro8; 1.8÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 270kHz
Mounting: SMT
Case: Micro8
Slew rate: 0.1V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.045mV
Voltage supply range: 1.8...5.5V DC
Kind of package: reel; tape
Input bias current: 0.4nA
Input offset current: 800pA
Number of channels: dual
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+94.91 грн
10+48.05 грн
25+40.00 грн
33+27.36 грн
91+25.90 грн
2500+25.52 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 245 490 735 980 1225 1470 1715 1960 2205 2445 2446 2447 2448 2449 2450 2451 2452 2453 2454 2455 2459  [ Наступна Сторінка >> ]