| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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SMMBT3906WT1G | ONSEMI |
 Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.2A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMMBT3906LT3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC33375ST-3.3T3G | ONSEMI |
 Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.3A Case: SOT223 Mounting: SMD Number of channels: 1 Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NCV33375ST3.3T3G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.3A Case: SOT223 Mounting: SMD Number of channels: 1 Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMUN2133LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Mounting: SMD Collector-emitter voltage: 50V Base resistor: 4.7kΩ Power dissipation: 0.246W Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP Kind of package: reel; tape Base-emitter resistor: 47kΩ Case: SOT23; TO236AB Collector current: 0.1A |
на замовлення 15109 шт: термін постачання 14-30 дні (днів) |
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NCP51403MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Operating voltage: 0.5...1.8/2.375...5.5V DC Mounting: SMD Output current: 3A Type of integrated circuit: PMIC Operating temperature: max. 150°C Application: for DDR memories Output voltage: -0.1...3.5V Case: DFN10 Kind of integrated circuit: DDR memory termination regulator Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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BAT54S | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Reverse recovery time: 5ns Capacitance: 10pF Max. forward impulse current: 0.6A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||||||
| CAT34C02HU4IGT4A | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz Mounting: SMD Access time: 900ns Type of integrated circuit: EEPROM memory Operating temperature: -40...85°C Clock frequency: 400kHz Memory: 2kb EEPROM Kind of interface: serial Memory organisation: 256x8bit Kind of package: reel; tape Case: uDFN8 Interface: I2C Operating voltage: 1.7...5.5V Kind of memory: EEPROM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| CAT25080HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz Mounting: SMD Type of integrated circuit: EEPROM memory Operating temperature: -40...85°C Clock frequency: 20MHz Memory: 8kb EEPROM Kind of interface: serial Memory organisation: 1024x8bit Kind of package: reel; tape Case: uDFN8 Interface: SPI Operating voltage: 1.8...5.5V Kind of memory: EEPROM |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| CAT25010HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 1.8÷5.5V; 20MHz; uDFN8 Mounting: SMD Type of integrated circuit: EEPROM memory Operating temperature: -40...85°C Clock frequency: 20MHz Memory: 1kb EEPROM Kind of interface: serial Memory organisation: 128x8bit Kind of package: reel; tape Case: uDFN8 Interface: SPI Operating voltage: 1.8...5.5V Kind of memory: EEPROM |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| CAT25020HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz; uDFN8 Mounting: SMD Type of integrated circuit: EEPROM memory Operating temperature: -40...85°C Clock frequency: 20MHz Memory: 2kb EEPROM Kind of interface: serial Memory organisation: 256x8bit Kind of package: reel; tape Case: uDFN8 Interface: SPI Operating voltage: 1.8...5.5V Kind of memory: EEPROM |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| CAT25040HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; uDFN8 Mounting: SMD Type of integrated circuit: EEPROM memory Operating temperature: -40...85°C Clock frequency: 20MHz Memory: 4kb EEPROM Kind of interface: serial Memory organisation: 512x8bit Kind of package: reel; tape Case: uDFN8 Interface: SPI Operating voltage: 1.8...5.5V Kind of memory: EEPROM |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| CAT25320HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 1.8÷5.5V; 10MHz; uDFN8 Mounting: SMD Access time: 40ns Type of integrated circuit: EEPROM memory Operating temperature: -40...85°C Clock frequency: 10MHz Memory: 32kb EEPROM Kind of interface: serial Memory organisation: 4kx8bit Kind of package: reel; tape Case: uDFN8 Interface: SPI Operating voltage: 1.8...5.5V Kind of memory: EEPROM |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| CAT25640HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; uDFN8 Mounting: SMD Access time: 40ns Type of integrated circuit: EEPROM memory Operating temperature: -40...85°C Clock frequency: 20MHz Memory: 64kb EEPROM Kind of interface: serial Memory organisation: 8kx8bit Kind of package: reel; tape Case: uDFN8 Interface: SPI Operating voltage: 1.8...5.5V Kind of memory: EEPROM |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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LM78L12ACZ | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; TO92; THT; bulk Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 12V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: bulk Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
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NCP1937A2DR2G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback Type of integrated circuit: PMIC Output current: 500...800mA Mounting: SMD Operating voltage: 8.8...30V DC Operating temperature: -40...125°C Case: SO20 Frequency: 112...150kHz Topology: flyback |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP1937A3DR2G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback Type of integrated circuit: PMIC Output current: 500...800mA Mounting: SMD Operating voltage: 8.8...30V DC Operating temperature: -40...125°C Case: SO20 Frequency: 112...150kHz Topology: flyback |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP1937B1DR2G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback Type of integrated circuit: PMIC Output current: 500...800mA Mounting: SMD Operating voltage: 8.8...30V DC Operating temperature: -40...125°C Case: SO20 Frequency: 215...285kHz Topology: flyback |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP1937B3DR2G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback Type of integrated circuit: PMIC Output current: 500...800mA Mounting: SMD Operating voltage: 8.8...30V DC Operating temperature: -40...125°C Case: SO20 Frequency: 112...150kHz Topology: flyback |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP1937C4DR2G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback Type of integrated circuit: PMIC Output current: 500...800mA Mounting: SMD Operating voltage: 8.8...30V DC Operating temperature: -40...125°C Case: SO20 Frequency: 112...150kHz Topology: flyback |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP1937C61DR2G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback Type of integrated circuit: PMIC Output current: 500...800mA Mounting: SMD Operating voltage: 8.8...30V DC Operating temperature: -40...125°C Case: SO20 Frequency: 112...150kHz Topology: flyback |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SDTA114YET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Manufacturer standard package: 3000pcs. Application: automotive industry Current gain: 80...140 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NSVDTA114YM3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Manufacturer standard package: 8000pcs. Application: automotive industry Current gain: 80...140 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP4303ADR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 8.9÷30VDC Type of integrated circuit: PMIC Output current: 2.5...5A Frequency: 0.5MHz Mounting: SMD Case: SO8 Topology: flyback; forward; resonant LLC Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.9...30V DC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
| FDMS3669S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W Mounting: SMD Power dissipation: 2.2/2.5W Gate charge: 24/34nC Polarisation: unipolar Drain current: 24/60A Kind of channel: enhancement Drain-source voltage: 30/30V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20/±12V Kind of package: reel; tape Case: Power56 On-state resistance: 14.5/7.1mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MBR2535CTG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 35V; 15Ax2; TO220AB; Ufmax: 0.72V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 35V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.72V Max. load current: 30A Max. forward impulse current: 150A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCV3066DR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uout: 3÷40V; 1.5A; SO8; SMD; 150kHz; Ch: 1 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Output voltage: 3...40V Output current: 1.5A Case: SO8 Mounting: SMD Frequency: 150kHz Number of channels: 1 Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDS4672A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8 Mounting: SMD Case: SO8 Power dissipation: 2.5W Polarisation: unipolar Drain current: 11A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape On-state resistance: 21mΩ |
на замовлення 2160 шт: термін постачання 14-30 дні (днів) |
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BAV99 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 8A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Reverse recovery time: 6ns Case: SOT23 Capacitance: 1.5pF Max. forward impulse current: 8A Max. forward voltage: 1.25V Power dissipation: 0.35W Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||||||
| MC74AC573DWR2G | ONSEMI |
Category: Latches Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; CMOS; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver; octal Number of channels: 8 Supply voltage: 2...6V DC Mounting: SMD Case: SOIC20 Family: AC Kind of output: 3-state Kind of package: reel; tape Manufacturer series: AC Operating temperature: -40...85°C Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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LM339N | ONSEMI |
Category: THT comparators Description: IC: comparator; universal; Cmp: 4; 2÷36V; THT; DIP14; tube; 150nA Type of integrated circuit: comparator Kind of comparator: universal Operating voltage: 2...36V Mounting: THT Case: DIP14 Input offset current: 150nA Input offset voltage: 9mV Kind of output: open collector Operating temperature: 0...70°C Number of comparators: 4 Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
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1N4007 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; CASE59; reel,tape; 3W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Capacitance: 15pF Max. forward impulse current: 30A Case: CASE59 Kind of package: reel; tape Max. forward voltage: 1.1V Power dissipation: 3W |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||||||
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NTS4409NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 0.75A; 0.28W; SC70,SOT323 Mounting: SMD Power dissipation: 0.28W Gate charge: 1.2nC Polarisation: unipolar Drain current: 0.75A Kind of channel: enhancement Drain-source voltage: 25V Type of transistor: N-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: SC70; SOT323 On-state resistance: 0.4Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NVS4409NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 750mA; Idm: 3A; 280mW; SC70 Mounting: SMD Pulsed drain current: 3A Power dissipation: 0.28W Gate charge: 1.2nC Polarisation: unipolar Drain current: 0.75A Kind of channel: enhancement Drain-source voltage: 25V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SC70 On-state resistance: 0.35Ω |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MBR1060G | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AC; Ufmax: 0.85V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 10A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 0.85V Max. load current: 20A Max. forward impulse current: 150A Kind of package: tube Heatsink thickness: 1.14...1.39mm |
на замовлення 34 шт: термін постачання 14-30 дні (днів) |
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FAN7391MX | ONSEMI |
Category: Buffers, transceivers, drivers Description: Transistor: N-MOSFET; unipolar; SO14; 12÷20V Case: SO14 Output current: 4.5A Supply voltage: 12...20V Mounting: SMD Operating temperature: -40...150°C Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FAN73912AMX | ONSEMI |
Category: Buffers, transceivers, drivers Description: Transistor: N-MOSFET; unipolar; SO16; 12÷20V Case: SO16 Output current: 2...3A Supply voltage: 12...20V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FAN7393AMX | ONSEMI |
Category: Buffers, transceivers, drivers Description: Transistor: N-MOSFET; unipolar; SO14; 12÷20V Case: SO14 Output current: 2.5A Supply voltage: 12...20V Mounting: SMD Operating temperature: -40...150°C Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
| FAN73933MX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™ Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Technology: MillerDrive™ Case: SOP14 Output current: -2.5...2.5A Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 50ns Pulse fall time: 35ns Kind of package: reel; tape Voltage class: 600V Protection: undervoltage UVP |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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FAN73912MX | ONSEMI |
Category: Buffers, transceivers, drivers Description: Transistor: N-MOSFET; unipolar; SO16; 12÷20V Case: SO16 Output current: 2...3A Supply voltage: 12...20V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAT54C | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Kind of package: reel; tape Capacitance: 10pF Reverse recovery time: 5ns Max. forward impulse current: 0.6A |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||||||
| NSS40301MZ4T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4 Mounting: SMD Collector-emitter voltage: 40V Power dissipation: 2W Polarisation: bipolar Type of transistor: NPN Current gain: 200...500 Kind of package: reel; tape Case: SOT223-4; TO261-4 Frequency: 100MHz Collector current: 3A |
на замовлення 995 шт: термін постачання 14-30 дні (днів) |
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NVR5124PLT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -0.67A; 0.19W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.67A Power dissipation: 0.19W Case: SOT23 On-state resistance: 0.23Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
на замовлення 2679 шт: термін постачання 14-30 дні (днів) |
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FCPF190N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 39W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Pulsed drain current: 60.6A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.199Ω Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FCPF190N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 61.8A; 39W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.6A Pulsed drain current: 61.8A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC7915BD2TR4G | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; -15V; 1A; D2PAK; SMD; Ch: 1 Mounting: SMD Kind of voltage regulator: fixed; linear Output current: 1A Type of integrated circuit: voltage regulator Output voltage: -15V Kind of package: reel; tape Case: D2PAK Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
 |
4N37M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV CTR@If: 100%@10mA Collector-emitter voltage: 30V Case: DIP6 Turn-on time: 2µs Turn-off time: 2µs |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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FDP4D5N10C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 128A; Idm: 512A; 150W; TO220-3 Pulsed drain current: 512A Power dissipation: 150W Gate charge: 48nC Polarisation: unipolar Drain current: 128A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220-3 On-state resistance: 4.5mΩ Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
 |
US1AFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 1A; 50ns; SOD123F; Ufmax: 950mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 1A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 0.95V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NTR4170NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.48W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.7A Power dissipation: 0.48W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 55mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1359 шт: термін постачання 14-30 дні (днів) |
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| NTE4153NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.66A; 0.3W; SC89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.66A Power dissipation: 0.3W Case: SC89 Gate-source voltage: ±6V On-state resistance: 0.23Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3504 шт: термін постачання 14-30 дні (днів) |
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LM555CN | ONSEMI |
Category: Watchdog and reset circuits Description: IC: peripheral circuit; astable,monostable,RC timer; 4.5÷16VDC Type of integrated circuit: peripheral circuit Kind of integrated circuit: astable; monostable; RC timer Supply voltage: 4.5...16V DC Case: DIP8 DC supply current: 7.5mA Output current: 0.2A Mounting: THT Operating temperature: 0...70°C Kind of package: tube Number of channels: 1 Controlled voltage: 10V |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
| UJ3N065080K3S | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 24A Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 72A Power dissipation: 190W Case: TO247-3 Gate-source voltage: -20...20V On-state resistance: 0.13Ω Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| UJ3N065025K3S | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 62A Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 650V Drain current: 62A Pulsed drain current: 250A Power dissipation: 441W Case: TO247-3 Gate-source voltage: -20...20V On-state resistance: 43mΩ Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| UJ3N120035K3S | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 1.2kV; 46A Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 1.2kV Drain current: 46A Pulsed drain current: 185A Power dissipation: 429W Case: TO247-3 Gate-source voltage: -20...20V On-state resistance: 76mΩ Mounting: THT Gate charge: 235nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| UJ3N120065K3S | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 1.2kV; 25A Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 1.2kV Drain current: 25A Pulsed drain current: 90A Power dissipation: 254W Case: TO247-3 Gate-source voltage: -30...20V On-state resistance: 142mΩ Mounting: THT Gate charge: 114nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| UF3N120007K4S | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; 1.2kV; 120A; 789W Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 120A Pulsed drain current: 550A Power dissipation: 789W Case: TO247-4 Gate-source voltage: ±30V On-state resistance: 15.5mΩ Mounting: THT Gate charge: 830nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | |||||||||||||||||||
 |
P6KE160A | ONSEMI |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 600W; 152V; 2.7A; unidirectional; DO15 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 136V Breakdown voltage: 152V Max. forward impulse current: 2.7A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 5µA |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||||
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LM358N | ONSEMI |
Category: THT operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8 Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: dual; 2 Mounting: THT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: DIP8 |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||||
 |
FJP1943RTU | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 230V; 15A; 80W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 230V Collector current: 15A Power dissipation: 80W Case: TO220AB Current gain: 55...160 Mounting: THT Kind of package: tube Frequency: 30MHz |
товару немає в наявності |
В кошику од. на суму грн. |
| SMMBT3906WT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| SMMBT3906LT3G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| MC33375ST-3.3T3G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: SOT223
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: SOT223
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| NCV33375ST3.3T3G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: SOT223
Mounting: SMD
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.3A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.3A
Case: SOT223
Mounting: SMD
Number of channels: 1
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| MMUN2133LT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Power dissipation: 0.246W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Case: SOT23; TO236AB
Collector current: 0.1A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Power dissipation: 0.246W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Case: SOT23; TO236AB
Collector current: 0.1A
на замовлення 15109 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.35 грн |
| 57+ | 7.38 грн |
| 100+ | 4.21 грн |
| 124+ | 3.40 грн |
| 200+ | 2.87 грн |
| 500+ | 2.40 грн |
| 1000+ | 2.10 грн |
| 1500+ | 1.94 грн |
| 2000+ | 1.85 грн |
| NCP51403MNTXG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Operating voltage: 0.5...1.8/2.375...5.5V DC
Mounting: SMD
Output current: 3A
Type of integrated circuit: PMIC
Operating temperature: max. 150°C
Application: for DDR memories
Output voltage: -0.1...3.5V
Case: DFN10
Kind of integrated circuit: DDR memory termination regulator
Number of channels: 1
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Operating voltage: 0.5...1.8/2.375...5.5V DC
Mounting: SMD
Output current: 3A
Type of integrated circuit: PMIC
Operating temperature: max. 150°C
Application: for DDR memories
Output voltage: -0.1...3.5V
Case: DFN10
Kind of integrated circuit: DDR memory termination regulator
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BAT54S |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Reverse recovery time: 5ns
Capacitance: 10pF
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Reverse recovery time: 5ns
Capacitance: 10pF
Max. forward impulse current: 0.6A
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| CAT34C02HU4IGT4A |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz
Mounting: SMD
Access time: 900ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 400kHz
Memory: 2kb EEPROM
Kind of interface: serial
Memory organisation: 256x8bit
Kind of package: reel; tape
Case: uDFN8
Interface: I2C
Operating voltage: 1.7...5.5V
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz
Mounting: SMD
Access time: 900ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 400kHz
Memory: 2kb EEPROM
Kind of interface: serial
Memory organisation: 256x8bit
Kind of package: reel; tape
Case: uDFN8
Interface: I2C
Operating voltage: 1.7...5.5V
Kind of memory: EEPROM
товару немає в наявності
В кошику
од. на суму грн.
| CAT25080HU4I-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 8kb EEPROM
Kind of interface: serial
Memory organisation: 1024x8bit
Kind of package: reel; tape
Case: uDFN8
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 8kb EEPROM
Kind of interface: serial
Memory organisation: 1024x8bit
Kind of package: reel; tape
Case: uDFN8
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CAT25010HU4I-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 1.8÷5.5V; 20MHz; uDFN8
Mounting: SMD
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 1kb EEPROM
Kind of interface: serial
Memory organisation: 128x8bit
Kind of package: reel; tape
Case: uDFN8
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 1.8÷5.5V; 20MHz; uDFN8
Mounting: SMD
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 1kb EEPROM
Kind of interface: serial
Memory organisation: 128x8bit
Kind of package: reel; tape
Case: uDFN8
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CAT25020HU4I-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz; uDFN8
Mounting: SMD
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 2kb EEPROM
Kind of interface: serial
Memory organisation: 256x8bit
Kind of package: reel; tape
Case: uDFN8
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz; uDFN8
Mounting: SMD
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 2kb EEPROM
Kind of interface: serial
Memory organisation: 256x8bit
Kind of package: reel; tape
Case: uDFN8
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CAT25040HU4I-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; uDFN8
Mounting: SMD
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 4kb EEPROM
Kind of interface: serial
Memory organisation: 512x8bit
Kind of package: reel; tape
Case: uDFN8
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; uDFN8
Mounting: SMD
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 4kb EEPROM
Kind of interface: serial
Memory organisation: 512x8bit
Kind of package: reel; tape
Case: uDFN8
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CAT25320HU4I-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 1.8÷5.5V; 10MHz; uDFN8
Mounting: SMD
Access time: 40ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 10MHz
Memory: 32kb EEPROM
Kind of interface: serial
Memory organisation: 4kx8bit
Kind of package: reel; tape
Case: uDFN8
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 1.8÷5.5V; 10MHz; uDFN8
Mounting: SMD
Access time: 40ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 10MHz
Memory: 32kb EEPROM
Kind of interface: serial
Memory organisation: 4kx8bit
Kind of package: reel; tape
Case: uDFN8
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CAT25640HU4I-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; uDFN8
Mounting: SMD
Access time: 40ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 64kb EEPROM
Kind of interface: serial
Memory organisation: 8kx8bit
Kind of package: reel; tape
Case: uDFN8
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; uDFN8
Mounting: SMD
Access time: 40ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 64kb EEPROM
Kind of interface: serial
Memory organisation: 8kx8bit
Kind of package: reel; tape
Case: uDFN8
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| LM78L12ACZ |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Number of channels: 1
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Мінімальне замовлення: 3 шт
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| NCP1937A2DR2G |
|
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
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| NCP1937A3DR2G |
|
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
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| NCP1937B1DR2G |
|
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 215...285kHz
Topology: flyback
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 215...285kHz
Topology: flyback
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| NCP1937B3DR2G |
|
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
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| NCP1937C4DR2G |
|
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
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| NCP1937C61DR2G |
|
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 8.8÷30VDC; SO20; Topology: flyback
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 8.8...30V DC
Operating temperature: -40...125°C
Case: SO20
Frequency: 112...150kHz
Topology: flyback
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| SDTA114YET1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 80...140
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 80...140
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| NSVDTA114YM3T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Application: automotive industry
Current gain: 80...140
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Application: automotive industry
Current gain: 80...140
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| NCP4303ADR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 8.9÷30VDC
Type of integrated circuit: PMIC
Output current: 2.5...5A
Frequency: 0.5MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...30V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 8.9÷30VDC
Type of integrated circuit: PMIC
Output current: 2.5...5A
Frequency: 0.5MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...30V DC
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Мінімальне замовлення: 2500 шт
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| FDMS3669S |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W
Mounting: SMD
Power dissipation: 2.2/2.5W
Gate charge: 24/34nC
Polarisation: unipolar
Drain current: 24/60A
Kind of channel: enhancement
Drain-source voltage: 30/30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20/±12V
Kind of package: reel; tape
Case: Power56
On-state resistance: 14.5/7.1mΩ
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W
Mounting: SMD
Power dissipation: 2.2/2.5W
Gate charge: 24/34nC
Polarisation: unipolar
Drain current: 24/60A
Kind of channel: enhancement
Drain-source voltage: 30/30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20/±12V
Kind of package: reel; tape
Case: Power56
On-state resistance: 14.5/7.1mΩ
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| MBR2535CTG |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 15Ax2; TO220AB; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.72V
Max. load current: 30A
Max. forward impulse current: 150A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 15Ax2; TO220AB; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.72V
Max. load current: 30A
Max. forward impulse current: 150A
Kind of package: tube
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| NCV3066DR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uout: 3÷40V; 1.5A; SO8; SMD; 150kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Output voltage: 3...40V
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 150kHz
Number of channels: 1
Kind of package: reel; tape
Application: automotive industry
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uout: 3÷40V; 1.5A; SO8; SMD; 150kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Output voltage: 3...40V
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 150kHz
Number of channels: 1
Kind of package: reel; tape
Application: automotive industry
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| FDS4672A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8
Mounting: SMD
Case: SO8
Power dissipation: 2.5W
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 21mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; 2.5W; SO8
Mounting: SMD
Case: SO8
Power dissipation: 2.5W
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 21mΩ
на замовлення 2160 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 87.61 грн |
| 10+ | 51.16 грн |
| BAV99 |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 8A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Case: SOT23
Capacitance: 1.5pF
Max. forward impulse current: 8A
Max. forward voltage: 1.25V
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 8A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Case: SOT23
Capacitance: 1.5pF
Max. forward impulse current: 8A
Max. forward voltage: 1.25V
Power dissipation: 0.35W
Kind of package: reel; tape
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Мінімальне замовлення: 25 шт
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| MC74AC573DWR2G |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC20
Family: AC
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: AC
Operating temperature: -40...85°C
Technology: CMOS
Category: Latches
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC20
Family: AC
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: AC
Operating temperature: -40...85°C
Technology: CMOS
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| LM339N |
|
Виробник: ONSEMI
Category: THT comparators
Description: IC: comparator; universal; Cmp: 4; 2÷36V; THT; DIP14; tube; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Operating voltage: 2...36V
Mounting: THT
Case: DIP14
Input offset current: 150nA
Input offset voltage: 9mV
Kind of output: open collector
Operating temperature: 0...70°C
Number of comparators: 4
Kind of package: tube
Category: THT comparators
Description: IC: comparator; universal; Cmp: 4; 2÷36V; THT; DIP14; tube; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Operating voltage: 2...36V
Mounting: THT
Case: DIP14
Input offset current: 150nA
Input offset voltage: 9mV
Kind of output: open collector
Operating temperature: 0...70°C
Number of comparators: 4
Kind of package: tube
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Мінімальне замовлення: 3 шт
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| 1N4007 |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; CASE59; reel,tape; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Max. forward impulse current: 30A
Case: CASE59
Kind of package: reel; tape
Max. forward voltage: 1.1V
Power dissipation: 3W
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; CASE59; reel,tape; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Max. forward impulse current: 30A
Case: CASE59
Kind of package: reel; tape
Max. forward voltage: 1.1V
Power dissipation: 3W
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Мінімальне замовлення: 10 шт
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| NTS4409NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.75A; 0.28W; SC70,SOT323
Mounting: SMD
Power dissipation: 0.28W
Gate charge: 1.2nC
Polarisation: unipolar
Drain current: 0.75A
Kind of channel: enhancement
Drain-source voltage: 25V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SC70; SOT323
On-state resistance: 0.4Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.75A; 0.28W; SC70,SOT323
Mounting: SMD
Power dissipation: 0.28W
Gate charge: 1.2nC
Polarisation: unipolar
Drain current: 0.75A
Kind of channel: enhancement
Drain-source voltage: 25V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SC70; SOT323
On-state resistance: 0.4Ω
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| NVS4409NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 750mA; Idm: 3A; 280mW; SC70
Mounting: SMD
Pulsed drain current: 3A
Power dissipation: 0.28W
Gate charge: 1.2nC
Polarisation: unipolar
Drain current: 0.75A
Kind of channel: enhancement
Drain-source voltage: 25V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SC70
On-state resistance: 0.35Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 750mA; Idm: 3A; 280mW; SC70
Mounting: SMD
Pulsed drain current: 3A
Power dissipation: 0.28W
Gate charge: 1.2nC
Polarisation: unipolar
Drain current: 0.75A
Kind of channel: enhancement
Drain-source voltage: 25V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SC70
On-state resistance: 0.35Ω
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| MBR1060G |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AC; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AC; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
на замовлення 34 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 89.41 грн |
| 7+ | 67.76 грн |
| 10+ | 59.12 грн |
| FAN7391MX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO14; 12÷20V
Case: SO14
Output current: 4.5A
Supply voltage: 12...20V
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO14; 12÷20V
Case: SO14
Output current: 4.5A
Supply voltage: 12...20V
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
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| FAN73912AMX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO16; 12÷20V
Case: SO16
Output current: 2...3A
Supply voltage: 12...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO16; 12÷20V
Case: SO16
Output current: 2...3A
Supply voltage: 12...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
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| FAN7393AMX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO14; 12÷20V
Case: SO14
Output current: 2.5A
Supply voltage: 12...20V
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO14; 12÷20V
Case: SO14
Output current: 2.5A
Supply voltage: 12...20V
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
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Мінімальне замовлення: 3000 шт
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| FAN73933MX |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP14
Output current: -2.5...2.5A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 50ns
Pulse fall time: 35ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP14
Output current: -2.5...2.5A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 50ns
Pulse fall time: 35ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
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Мінімальне замовлення: 3000 шт
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| FAN73912MX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO16; 12÷20V
Case: SO16
Output current: 2...3A
Supply voltage: 12...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: Buffers, transceivers, drivers
Description: Transistor: N-MOSFET; unipolar; SO16; 12÷20V
Case: SO16
Output current: 2...3A
Supply voltage: 12...20V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
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| BAT54C |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
товару немає в наявності
Мінімальне замовлення: 25 шт
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| NSS40301MZ4T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4
Mounting: SMD
Collector-emitter voltage: 40V
Power dissipation: 2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 200...500
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Frequency: 100MHz
Collector current: 3A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4
Mounting: SMD
Collector-emitter voltage: 40V
Power dissipation: 2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 200...500
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Frequency: 100MHz
Collector current: 3A
на замовлення 995 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 54.19 грн |
| 13+ | 33.55 грн |
| 100+ | 20.30 грн |
| 500+ | 15.10 грн |
| NVR5124PLT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.67A; 0.19W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.67A
Power dissipation: 0.19W
Case: SOT23
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.67A; 0.19W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.67A
Power dissipation: 0.19W
Case: SOT23
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 2679 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 49.67 грн |
| 14+ | 30.19 грн |
| 25+ | 24.99 грн |
| 50+ | 21.72 грн |
| 100+ | 18.87 грн |
| 250+ | 15.68 грн |
| 500+ | 13.75 грн |
| 1000+ | 12.66 грн |
| FCPF190N60 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 39W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Pulsed drain current: 60.6A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 39W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Pulsed drain current: 60.6A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
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| FCPF190N60E |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 61.8A; 39W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.6A
Pulsed drain current: 61.8A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 61.8A; 39W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.6A
Pulsed drain current: 61.8A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
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| MC7915BD2TR4G |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 1A; D2PAK; SMD; Ch: 1
Mounting: SMD
Kind of voltage regulator: fixed; linear
Output current: 1A
Type of integrated circuit: voltage regulator
Output voltage: -15V
Kind of package: reel; tape
Case: D2PAK
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 1A; D2PAK; SMD; Ch: 1
Mounting: SMD
Kind of voltage regulator: fixed; linear
Output current: 1A
Type of integrated circuit: voltage regulator
Output voltage: -15V
Kind of package: reel; tape
Case: D2PAK
Number of channels: 1
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| 4N37M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| FDP4D5N10C |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 128A; Idm: 512A; 150W; TO220-3
Pulsed drain current: 512A
Power dissipation: 150W
Gate charge: 48nC
Polarisation: unipolar
Drain current: 128A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 4.5mΩ
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 128A; Idm: 512A; 150W; TO220-3
Pulsed drain current: 512A
Power dissipation: 150W
Gate charge: 48nC
Polarisation: unipolar
Drain current: 128A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 4.5mΩ
Mounting: THT
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| US1AFA |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 50ns; SOD123F; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.95V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 50ns; SOD123F; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.95V
Kind of package: reel; tape
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| NTR4170NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.48W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.48W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1359 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 35.22 грн |
| 16+ | 27.51 грн |
| 18+ | 24.07 грн |
| 50+ | 16.69 грн |
| 100+ | 14.26 грн |
| 500+ | 10.15 грн |
| 1000+ | 9.06 грн |
| NTE4153NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.66A; 0.3W; SC89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.66A
Power dissipation: 0.3W
Case: SC89
Gate-source voltage: ±6V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.66A; 0.3W; SC89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.66A
Power dissipation: 0.3W
Case: SC89
Gate-source voltage: ±6V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3504 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.13 грн |
| 17+ | 25.33 грн |
| 22+ | 19.96 грн |
| 50+ | 8.55 грн |
| 100+ | 5.95 грн |
| 500+ | 5.87 грн |
| LM555CN |
|
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: peripheral circuit; astable,monostable,RC timer; 4.5÷16VDC
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: astable; monostable; RC timer
Supply voltage: 4.5...16V DC
Case: DIP8
DC supply current: 7.5mA
Output current: 0.2A
Mounting: THT
Operating temperature: 0...70°C
Kind of package: tube
Number of channels: 1
Controlled voltage: 10V
Category: Watchdog and reset circuits
Description: IC: peripheral circuit; astable,monostable,RC timer; 4.5÷16VDC
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: astable; monostable; RC timer
Supply voltage: 4.5...16V DC
Case: DIP8
DC supply current: 7.5mA
Output current: 0.2A
Mounting: THT
Operating temperature: 0...70°C
Kind of package: tube
Number of channels: 1
Controlled voltage: 10V
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Мінімальне замовлення: 3 шт
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| UJ3N065080K3S |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 24A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 72A
Power dissipation: 190W
Case: TO247-3
Gate-source voltage: -20...20V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 24A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 72A
Power dissipation: 190W
Case: TO247-3
Gate-source voltage: -20...20V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
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| UJ3N065025K3S |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 250A
Power dissipation: 441W
Case: TO247-3
Gate-source voltage: -20...20V
On-state resistance: 43mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 650V
Drain current: 62A
Pulsed drain current: 250A
Power dissipation: 441W
Case: TO247-3
Gate-source voltage: -20...20V
On-state resistance: 43mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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| UJ3N120035K3S |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 1.2kV; 46A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 1.2kV
Drain current: 46A
Pulsed drain current: 185A
Power dissipation: 429W
Case: TO247-3
Gate-source voltage: -20...20V
On-state resistance: 76mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 1.2kV; 46A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 1.2kV
Drain current: 46A
Pulsed drain current: 185A
Power dissipation: 429W
Case: TO247-3
Gate-source voltage: -20...20V
On-state resistance: 76mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhancement
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| UJ3N120065K3S |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 1.2kV; 25A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 1.2kV
Drain current: 25A
Pulsed drain current: 90A
Power dissipation: 254W
Case: TO247-3
Gate-source voltage: -30...20V
On-state resistance: 142mΩ
Mounting: THT
Gate charge: 114nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 1.2kV; 25A
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 1.2kV
Drain current: 25A
Pulsed drain current: 90A
Power dissipation: 254W
Case: TO247-3
Gate-source voltage: -30...20V
On-state resistance: 142mΩ
Mounting: THT
Gate charge: 114nC
Kind of package: tube
Kind of channel: enhancement
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| UF3N120007K4S |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; 1.2kV; 120A; 789W
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 120A
Pulsed drain current: 550A
Power dissipation: 789W
Case: TO247-4
Gate-source voltage: ±30V
On-state resistance: 15.5mΩ
Mounting: THT
Gate charge: 830nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; 1.2kV; 120A; 789W
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 120A
Pulsed drain current: 550A
Power dissipation: 789W
Case: TO247-4
Gate-source voltage: ±30V
On-state resistance: 15.5mΩ
Mounting: THT
Gate charge: 830nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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Мінімальне замовлення: 600 шт
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| P6KE160A |
|
Виробник: ONSEMI
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 152V; 2.7A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 136V
Breakdown voltage: 152V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 152V; 2.7A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 136V
Breakdown voltage: 152V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
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Мінімальне замовлення: 5 шт
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| LM358N |
|
Виробник: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP8
Category: THT operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP8
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Мінімальне замовлення: 5 шт
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| FJP1943RTU |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 230V; 15A; 80W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 230V
Collector current: 15A
Power dissipation: 80W
Case: TO220AB
Current gain: 55...160
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 230V; 15A; 80W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 230V
Collector current: 15A
Power dissipation: 80W
Case: TO220AB
Current gain: 55...160
Mounting: THT
Kind of package: tube
Frequency: 30MHz
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