| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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 +1 |
NL17SZ07DFT2G | ONSEMI |
 Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC88A; 1.65÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Mounting: SMD Case: SC88A Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C |
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| NL17SZ07XV5T2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT553; 1.65÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Mounting: SMD Case: SOT553 Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 10µA Kind of output: open drain |
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| 1N459A | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 200V; 0.5A; bulk; DO35 Mounting: THT Case: DO35 Max. off-state voltage: 200V Load current: 0.5A Semiconductor structure: single diode Kind of package: bulk Type of diode: switching Features of semiconductor devices: small signal |
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| 1N459ATR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 200V; 0.5A; reel,tape; DO35 Mounting: THT Case: DO35 Max. off-state voltage: 200V Load current: 0.5A Semiconductor structure: single diode Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: small signal |
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1N5374BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 75V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 75V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
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| 1N5374BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 75V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 75V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
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| NSR1020MW2T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 1A; reel,tape Semiconductor structure: single diode Case: SOD323 Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 20V Max. forward voltage: 0.54V Load current: 1A |
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| FGB3040G2-F085 | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 25.6A; 150W; TO263AB Case: TO263AB Collector-emitter voltage: 400V Gate-emitter voltage: ±10V Collector current: 25.6A Type of transistor: IGBT Power dissipation: 150W Gate charge: 21nC Mounting: SMD |
на замовлення 747 шт: термін постачання 21-30 дні (днів) |
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| NTHL080N120SC1A | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 132A; 178W; TO247 Polarisation: unipolar Kind of package: tube Gate charge: 56nC Kind of channel: enhancement Gate-source voltage: ±25V Pulsed drain current: 132A Mounting: THT Case: TO247 Drain-source voltage: 1.2kV Drain current: 22A On-state resistance: 114mΩ Type of transistor: N-MOSFET Power dissipation: 178W |
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NSVR0170HT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; reel,tape Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: single diode Max. forward impulse current: 0.1A Application: automotive industry Kind of package: reel; tape Type of diode: Schottky switching Case: SOD323 |
на замовлення 230 шт: термін постачання 21-30 дні (днів) |
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| NSR0170P2T5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD923; SMD; 70V; 70mA; reel,tape Mounting: SMD Max. off-state voltage: 70V Max. forward voltage: 0.73V Load current: 70mA Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Schottky switching Case: SOD923 |
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| NSR0170HT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; reel,tape Mounting: SMD Max. off-state voltage: 70V Max. forward voltage: 0.73V Load current: 70mA Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Schottky switching Case: SOD323 |
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В кошику од. на суму грн. | |||||||||||||||||
| NSVR0170P2T5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD923; SMD; 70V; 70mA; reel,tape Mounting: SMD Max. off-state voltage: 70V Max. forward voltage: 0.73V Load current: 70mA Semiconductor structure: single diode Application: automotive industry Kind of package: reel; tape Type of diode: Schottky switching Case: SOD923 |
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BAS31 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Mounting: SMD Type of diode: switching Case: SOT23 Capacitance: 35pF Max. off-state voltage: 120V Max. forward voltage: 1.25V Load current: 0.2A Semiconductor structure: double series Reverse recovery time: 50ns Max. forward impulse current: 2A Power dissipation: 0.35W Kind of package: reel; tape |
на замовлення 820 шт: термін постачання 21-30 дні (днів) |
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2N6517G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 350V; 500mA; 625mW; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 350V Collector current: 0.5A Case: TO92 Mounting: THT Power: 625mW |
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QSE113 | ONSEMI |
Category: Phototransistors Description: Phototransistor; 5mm; λp max: 880nm; 5V; 50° LED diameter: 5mm LED lens: black with IR filter Viewing angle: 50° Type of photoelement: phototransistor Wavelength of peak sensitivity: 880nm Mounting: THT Collector-emitter voltage: 5V |
на замовлення 80 шт: термін постачання 21-30 дні (днів) |
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| NC7SZ34UCX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; WLCSP4; 10uA Number of channels: 1 Quiescent current: 10µA Kind of package: reel; tape Technology: CMOS Case: WLCSP4 Kind of integrated circuit: buffer; non-inverting Supply voltage: 1.65...5.5V DC Operating temperature: -40...85°C Mounting: SMD Type of integrated circuit: digital |
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| FOD8001 | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; 3.75kV; 25Mbps; SOIC8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: gate; logic Insulation voltage: 3.75kV Transfer rate: 25Mbps Case: SOIC8 Slew rate: 40kV/μs Manufacturer series: FOD8001 |
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| FOD8001R2 | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; 3.75kV; 25Mbps; SOIC8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: gate; logic Insulation voltage: 3.75kV Transfer rate: 25Mbps Case: SOIC8 Slew rate: 40kV/μs Manufacturer series: FOD8001 |
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74VHC04MTC | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: TSSOP14 Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Family: VHC Kind of package: tube Number of inputs: 1 |
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1N5370BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 56V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 56V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
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1N5371BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 60V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 60V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
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74VHC112MX | ONSEMI |
Category: Flip-Flops Description: IC: digital; JK flip-flop; Ch: 2; IN: 5; CMOS; VHC; SMD; SOIC16; VHC Type of integrated circuit: digital Number of channels: 2 Number of inputs: 5 Mounting: SMD Case: SOIC16 Supply voltage: 2...5.5V DC Family: VHC Kind of package: reel; tape Manufacturer series: VHC Technology: CMOS Kind of integrated circuit: JK flip-flop Operating temperature: -40...85°C |
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| CAV24C32YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32kb EEPROM Interface: I2C Memory organisation: 4kx8bit Operating voltage: 2.5...5.5V Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape |
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FDC6318P | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -12V; -2.5A; 0.96W; SuperSOT-6 Type of transistor: P-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -12V Drain current: -2.5A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±8V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2852 шт: термін постачання 21-30 дні (днів) |
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| FDMC8622 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 30A; 31W; WDFN8 Case: WDFN8 Drain-source voltage: 100V Drain current: 16A On-state resistance: 98mΩ Type of transistor: N-MOSFET Power dissipation: 31W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7.3nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 30A Mounting: SMD |
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| FDMS8622 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 16.5A; 31W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 16.5A Power dissipation: 31W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 97mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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| NSR0140P2T5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD923; SMD; 40V; 70mA; reel,tape Mounting: SMD Max. off-state voltage: 40V Max. forward voltage: 0.35V Load current: 70mA Semiconductor structure: single diode Max. forward impulse current: 0.5A Kind of package: reel; tape Type of diode: Schottky switching Case: SOD923 |
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4N26SR2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV Case: Gull wing 6 Turn-off time: 2µs CTR@If: 20%@10mA Turn-on time: 2µs |
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| SZ1SMA5916BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 4.3V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 4.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G Application: automotive industry |
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| SURS8260T3G-VF01 | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 2A; SMB; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 2A Semiconductor structure: single diode Case: SMB Kind of package: reel; tape Application: automotive industry |
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| NTHL027N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 60A Pulsed drain current: 187.5A Power dissipation: 595W Case: TO247 Gate-source voltage: ±30V On-state resistance: 27.4mΩ Mounting: THT Gate charge: 225nC Kind of package: tube Kind of channel: enhancement Technology: SuperFET® |
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| NTH4L027N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 60A Pulsed drain current: 187.5A Power dissipation: 595W Case: TO247 Gate-source voltage: ±30V On-state resistance: 23mΩ Mounting: THT Gate charge: 259nC Kind of package: tube Kind of channel: enhancement |
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| CM1293A-02SR | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6V; 0.225W; SOT143; Ch: 2; reel,tape; ESD Case: SOT143 Mounting: SMD Number of channels: 2 Capacitance: 2pF Max. off-state voltage: 3.3...5V Breakdown voltage: 6V Leakage current: 0.1µA Kind of package: reel; tape Type of diode: TVS array Version: ESD Peak pulse power dissipation: 0.225W |
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 +1 |
FNB41060 | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26 Type of integrated circuit: driver Topology: IGBT three-phase bridge; NTC thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: Motion SPM® 45 Case: SPMAA-A26 Output current: 10A Number of channels: 6 Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...16.5/0...400V DC Frequency: 20kHz Power dissipation: 32W Collector-emitter voltage: 600V |
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| FNB43060T2 | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAB-C26 Type of integrated circuit: driver Topology: IGBT three-phase bridge; NTC thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: Motion SPM® 45 Case: SPMAB-C26 Output current: 30A Number of channels: 6 Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...16.5/0...400V DC Frequency: 20kHz Power dissipation: 59W Collector-emitter voltage: 600V |
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| NFAM5065L4BT | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,NTC thermistor; 50A; Ch: 6 Type of integrated circuit: driver Topology: IGBT three-phase bridge; NTC thermistor Kind of integrated circuit: 3-phase motor controller; IPM Case: DIP39 (54x31) Output current: 50A Number of channels: 6 Mounting: THT Operating temperature: -40...125°C Operating voltage: 13...18.5/0...400V DC Frequency: 20kHz Collector-emitter voltage: 650V |
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NZT560A | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 3A; 1W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Power dissipation: 1W Case: SOT223-4; TO261-4 Current gain: 250...550 Mounting: SMD Kind of package: reel; tape Frequency: 75MHz |
на замовлення 3776 шт: термін постачання 21-30 дні (днів) |
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| NTHL190N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247 Type of transistor: N-MOSFET Case: TO247 Drain-source voltage: 650V Drain current: 12.7A On-state resistance: 0.165Ω Power dissipation: 162W Polarisation: unipolar Kind of package: tube Gate charge: 34nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 50A Mounting: THT |
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В кошику од. на суму грн. | |||||||||||||||||
| NTPF190N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 409 шт: термін постачання 21-30 дні (днів) |
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MC74ACT541DTG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: TSSOP20 Manufacturer series: ACT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state |
на замовлення 16 шт: термін постачання 21-30 дні (днів) |
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MC74ACT541DWG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20-W Operating temperature: -40...85°C Manufacturer series: ACT Case: SO20-W Supply voltage: 4.5...5.5V DC Type of integrated circuit: digital Number of channels: 8 Quiescent current: 80µA Kind of output: 3-state Kind of package: tube Kind of integrated circuit: buffer; line driver; non-inverting Mounting: SMD |
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| MC74ACT541DWR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver; octal Number of channels: 8 Technology: TTL Mounting: SMD Case: SOIC20 Manufacturer series: ACT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Family: ACT |
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MC74ACT541DTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: TSSOP20 Manufacturer series: ACT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state |
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В кошику од. на суму грн. | ||||||||||||||||
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RB751V40T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Kind of package: reel; tape |
на замовлення 4597 шт: термін постачання 21-30 дні (днів) |
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| GBPC3502 | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 35A; Ifsm: 400A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk Max. forward voltage: 1.1V |
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| GBPC3504 | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 35A; Ifsm: 400A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk Max. forward voltage: 1.1V |
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В кошику од. на суму грн. | |||||||||||||||||
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FDD850N10L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; 50W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 11.1A Power dissipation: 50W Case: DPAK Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2353 шт: термін постачання 21-30 дні (днів) |
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74VHCT14AMTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Kind of input: with Schmitt trigger Supply voltage: 4.5...5.5V DC Number of inputs: 1 Case: TSSOP14 Kind of gate: NOT Number of channels: hex; 6 Family: VHCT Type of integrated circuit: digital |
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| 1N458A | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 150V; 0.5A; bulk; DO35 Type of diode: switching Mounting: THT Max. off-state voltage: 150V Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: bulk Case: DO35 |
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В кошику од. на суму грн. | |||||||||||||||||
| 1N458ATR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 150V; 0.5A; reel,tape; DO35 Type of diode: switching Mounting: THT Max. off-state voltage: 150V Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: reel; tape Case: DO35 |
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В кошику од. на суму грн. | |||||||||||||||||
| NRVTS12120MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 12A; reel,tape Type of diode: Schottky rectifying Case: DFN5 Mounting: SMD Max. off-state voltage: 120V Load current: 12A Semiconductor structure: single diode Max. forward voltage: 0.83V Max. load current: 24A Max. forward impulse current: 200A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NRVTS12120MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 12A; reel,tape Type of diode: Schottky rectifying Case: DFN5 Mounting: SMD Max. off-state voltage: 120V Load current: 12A Semiconductor structure: single diode Max. forward voltage: 0.83V Max. load current: 24A Max. forward impulse current: 200A Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
| NRVTS30120MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 30A; reel,tape Type of diode: Schottky rectifying Case: DFN5 Mounting: SMD Max. off-state voltage: 120V Load current: 30A Semiconductor structure: single diode Max. forward voltage: 0.95V Max. load current: 60A Max. forward impulse current: 0.3kA Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
| 1N5354BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 17V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 17V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
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В кошику од. на суму грн. | |||||||||||||||||
| 1N5354BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 17V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 17V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FDMS7670 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 62W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 42A Power dissipation: 62W Case: Power56 Gate-source voltage: ±20V On-state resistance: 5.3mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 150A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
 |
BC847BDW1T3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
SBC847BDW1T3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
 |
MJE15034G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 350V; 4A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 350V Collector current: 4A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 30MHz |
на замовлення 750 шт: термін постачання 21-30 дні (днів) |
|
| NL17SZ07DFT2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC88A; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
Case: SC88A
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC88A; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
Case: SC88A
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
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| NL17SZ07XV5T2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT553; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
Case: SOT553
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of output: open drain
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SOT553; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
Case: SOT553
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of output: open drain
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| 1N459A |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.5A; bulk; DO35
Mounting: THT
Case: DO35
Max. off-state voltage: 200V
Load current: 0.5A
Semiconductor structure: single diode
Kind of package: bulk
Type of diode: switching
Features of semiconductor devices: small signal
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.5A; bulk; DO35
Mounting: THT
Case: DO35
Max. off-state voltage: 200V
Load current: 0.5A
Semiconductor structure: single diode
Kind of package: bulk
Type of diode: switching
Features of semiconductor devices: small signal
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| 1N459ATR |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.5A; reel,tape; DO35
Mounting: THT
Case: DO35
Max. off-state voltage: 200V
Load current: 0.5A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: small signal
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.5A; reel,tape; DO35
Mounting: THT
Case: DO35
Max. off-state voltage: 200V
Load current: 0.5A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: small signal
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| 1N5374BG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 75V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 75V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 75V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 75V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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| 1N5374BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 75V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 75V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 75V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 75V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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| NSR1020MW2T1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 1A; reel,tape
Semiconductor structure: single diode
Case: SOD323
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Max. forward voltage: 0.54V
Load current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 20V; 1A; reel,tape
Semiconductor structure: single diode
Case: SOD323
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Max. forward voltage: 0.54V
Load current: 1A
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| FGB3040G2-F085 |
|
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; TO263AB
Case: TO263AB
Collector-emitter voltage: 400V
Gate-emitter voltage: ±10V
Collector current: 25.6A
Type of transistor: IGBT
Power dissipation: 150W
Gate charge: 21nC
Mounting: SMD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; TO263AB
Case: TO263AB
Collector-emitter voltage: 400V
Gate-emitter voltage: ±10V
Collector current: 25.6A
Type of transistor: IGBT
Power dissipation: 150W
Gate charge: 21nC
Mounting: SMD
на замовлення 747 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 197.24 грн |
| 6+ | 159.40 грн |
| 16+ | 150.20 грн |
| 250+ | 148.67 грн |
| 500+ | 144.84 грн |
| NTHL080N120SC1A |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 132A; 178W; TO247
Polarisation: unipolar
Kind of package: tube
Gate charge: 56nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: 132A
Mounting: THT
Case: TO247
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 114mΩ
Type of transistor: N-MOSFET
Power dissipation: 178W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 132A; 178W; TO247
Polarisation: unipolar
Kind of package: tube
Gate charge: 56nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: 132A
Mounting: THT
Case: TO247
Drain-source voltage: 1.2kV
Drain current: 22A
On-state resistance: 114mΩ
Type of transistor: N-MOSFET
Power dissipation: 178W
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| NSVR0170HT1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; reel,tape
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward impulse current: 0.1A
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOD323
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; reel,tape
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward impulse current: 0.1A
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOD323
на замовлення 230 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 14.03 грн |
| 41+ | 9.50 грн |
| 100+ | 4.43 грн |
| NSR0170P2T5G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 70V; 70mA; reel,tape
Mounting: SMD
Max. off-state voltage: 70V
Max. forward voltage: 0.73V
Load current: 70mA
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOD923
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 70V; 70mA; reel,tape
Mounting: SMD
Max. off-state voltage: 70V
Max. forward voltage: 0.73V
Load current: 70mA
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOD923
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| NSR0170HT1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; reel,tape
Mounting: SMD
Max. off-state voltage: 70V
Max. forward voltage: 0.73V
Load current: 70mA
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOD323
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; reel,tape
Mounting: SMD
Max. off-state voltage: 70V
Max. forward voltage: 0.73V
Load current: 70mA
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOD323
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| NSVR0170P2T5G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 70V; 70mA; reel,tape
Mounting: SMD
Max. off-state voltage: 70V
Max. forward voltage: 0.73V
Load current: 70mA
Semiconductor structure: single diode
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOD923
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 70V; 70mA; reel,tape
Mounting: SMD
Max. off-state voltage: 70V
Max. forward voltage: 0.73V
Load current: 70mA
Semiconductor structure: single diode
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOD923
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| BAS31 |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Mounting: SMD
Type of diode: switching
Case: SOT23
Capacitance: 35pF
Max. off-state voltage: 120V
Max. forward voltage: 1.25V
Load current: 0.2A
Semiconductor structure: double series
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Mounting: SMD
Type of diode: switching
Case: SOT23
Capacitance: 35pF
Max. off-state voltage: 120V
Max. forward voltage: 1.25V
Load current: 0.2A
Semiconductor structure: double series
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
на замовлення 820 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.46 грн |
| 31+ | 12.72 грн |
| 34+ | 11.34 грн |
| 50+ | 9.58 грн |
| 100+ | 6.59 грн |
| 149+ | 5.98 грн |
| 411+ | 5.67 грн |
| 500+ | 5.59 грн |
| 2N6517G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 500mA; 625mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 0.5A
Case: TO92
Mounting: THT
Power: 625mW
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 500mA; 625mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 0.5A
Case: TO92
Mounting: THT
Power: 625mW
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| QSE113 |
|
Виробник: ONSEMI
Category: Phototransistors
Description: Phototransistor; 5mm; λp max: 880nm; 5V; 50°
LED diameter: 5mm
LED lens: black with IR filter
Viewing angle: 50°
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 880nm
Mounting: THT
Collector-emitter voltage: 5V
Category: Phototransistors
Description: Phototransistor; 5mm; λp max: 880nm; 5V; 50°
LED diameter: 5mm
LED lens: black with IR filter
Viewing angle: 50°
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 880nm
Mounting: THT
Collector-emitter voltage: 5V
на замовлення 80 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 75.10 грн |
| 10+ | 44.45 грн |
| 35+ | 26.44 грн |
| NC7SZ34UCX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; WLCSP4; 10uA
Number of channels: 1
Quiescent current: 10µA
Kind of package: reel; tape
Technology: CMOS
Case: WLCSP4
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; WLCSP4; 10uA
Number of channels: 1
Quiescent current: 10µA
Kind of package: reel; tape
Technology: CMOS
Case: WLCSP4
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Mounting: SMD
Type of integrated circuit: digital
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| FOD8001 |
|
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; 3.75kV; 25Mbps; SOIC8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Insulation voltage: 3.75kV
Transfer rate: 25Mbps
Case: SOIC8
Slew rate: 40kV/μs
Manufacturer series: FOD8001
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; 3.75kV; 25Mbps; SOIC8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Insulation voltage: 3.75kV
Transfer rate: 25Mbps
Case: SOIC8
Slew rate: 40kV/μs
Manufacturer series: FOD8001
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| FOD8001R2 |
|
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; 3.75kV; 25Mbps; SOIC8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Insulation voltage: 3.75kV
Transfer rate: 25Mbps
Case: SOIC8
Slew rate: 40kV/μs
Manufacturer series: FOD8001
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; 3.75kV; 25Mbps; SOIC8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Insulation voltage: 3.75kV
Transfer rate: 25Mbps
Case: SOIC8
Slew rate: 40kV/μs
Manufacturer series: FOD8001
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| 74VHC04MTC |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Family: VHC
Kind of package: tube
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Family: VHC
Kind of package: tube
Number of inputs: 1
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| 1N5370BG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 56V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 56V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 56V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 56V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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| 1N5371BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 60V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 60V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 60V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 60V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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| 74VHC112MX |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; IN: 5; CMOS; VHC; SMD; SOIC16; VHC
Type of integrated circuit: digital
Number of channels: 2
Number of inputs: 5
Mounting: SMD
Case: SOIC16
Supply voltage: 2...5.5V DC
Family: VHC
Kind of package: reel; tape
Manufacturer series: VHC
Technology: CMOS
Kind of integrated circuit: JK flip-flop
Operating temperature: -40...85°C
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; IN: 5; CMOS; VHC; SMD; SOIC16; VHC
Type of integrated circuit: digital
Number of channels: 2
Number of inputs: 5
Mounting: SMD
Case: SOIC16
Supply voltage: 2...5.5V DC
Family: VHC
Kind of package: reel; tape
Manufacturer series: VHC
Technology: CMOS
Kind of integrated circuit: JK flip-flop
Operating temperature: -40...85°C
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| CAV24C32YE-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
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| FDC6318P |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2.5A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.5A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2.5A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.5A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2852 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 70.15 грн |
| 10+ | 48.74 грн |
| 25+ | 42.23 грн |
| 29+ | 31.34 грн |
| 79+ | 29.58 грн |
| 250+ | 28.97 грн |
| 500+ | 28.43 грн |
| FDMC8622 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 30A; 31W; WDFN8
Case: WDFN8
Drain-source voltage: 100V
Drain current: 16A
On-state resistance: 98mΩ
Type of transistor: N-MOSFET
Power dissipation: 31W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; Idm: 30A; 31W; WDFN8
Case: WDFN8
Drain-source voltage: 100V
Drain current: 16A
On-state resistance: 98mΩ
Type of transistor: N-MOSFET
Power dissipation: 31W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
Mounting: SMD
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| FDMS8622 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16.5A; 31W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16.5A
Power dissipation: 31W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16.5A; 31W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16.5A
Power dissipation: 31W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| NSR0140P2T5G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 40V; 70mA; reel,tape
Mounting: SMD
Max. off-state voltage: 40V
Max. forward voltage: 0.35V
Load current: 70mA
Semiconductor structure: single diode
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOD923
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 40V; 70mA; reel,tape
Mounting: SMD
Max. off-state voltage: 40V
Max. forward voltage: 0.35V
Load current: 70mA
Semiconductor structure: single diode
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Type of diode: Schottky switching
Case: SOD923
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| 4N26SR2M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: Gull wing 6
Turn-off time: 2µs
CTR@If: 20%@10mA
Turn-on time: 2µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: Gull wing 6
Turn-off time: 2µs
CTR@If: 20%@10mA
Turn-on time: 2µs
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| SZ1SMA5916BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 4.3V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 4.3V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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| SURS8260T3G-VF01 |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Application: automotive industry
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| NTHL027N65S3HF |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 27.4mΩ
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
Technology: SuperFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 27.4mΩ
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
Technology: SuperFET®
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| NTH4L027N65S3F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 259nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 259nC
Kind of package: tube
Kind of channel: enhancement
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| CM1293A-02SR |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 0.225W; SOT143; Ch: 2; reel,tape; ESD
Case: SOT143
Mounting: SMD
Number of channels: 2
Capacitance: 2pF
Max. off-state voltage: 3.3...5V
Breakdown voltage: 6V
Leakage current: 0.1µA
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.225W
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 0.225W; SOT143; Ch: 2; reel,tape; ESD
Case: SOT143
Mounting: SMD
Number of channels: 2
Capacitance: 2pF
Max. off-state voltage: 3.3...5V
Breakdown voltage: 6V
Leakage current: 0.1µA
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.225W
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| FNB41060 |
|
Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: Motion SPM® 45
Case: SPMAA-A26
Output current: 10A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Power dissipation: 32W
Collector-emitter voltage: 600V
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: Motion SPM® 45
Case: SPMAA-A26
Output current: 10A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Power dissipation: 32W
Collector-emitter voltage: 600V
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| FNB43060T2 |
|
Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAB-C26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: Motion SPM® 45
Case: SPMAB-C26
Output current: 30A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Power dissipation: 59W
Collector-emitter voltage: 600V
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAB-C26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: Motion SPM® 45
Case: SPMAB-C26
Output current: 30A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Power dissipation: 59W
Collector-emitter voltage: 600V
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| NFAM5065L4BT |
|
Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; 50A; Ch: 6
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP39 (54x31)
Output current: 50A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13...18.5/0...400V DC
Frequency: 20kHz
Collector-emitter voltage: 650V
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; 50A; Ch: 6
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP39 (54x31)
Output current: 50A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13...18.5/0...400V DC
Frequency: 20kHz
Collector-emitter voltage: 650V
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| NZT560A |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 1W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 1W
Case: SOT223-4; TO261-4
Current gain: 250...550
Mounting: SMD
Kind of package: reel; tape
Frequency: 75MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 1W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 1W
Case: SOT223-4; TO261-4
Current gain: 250...550
Mounting: SMD
Kind of package: reel; tape
Frequency: 75MHz
на замовлення 3776 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 33.84 грн |
| 15+ | 25.67 грн |
| 50+ | 18.47 грн |
| 137+ | 17.47 грн |
| 500+ | 16.86 грн |
| NTHL190N65S3HF |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247
Type of transistor: N-MOSFET
Case: TO247
Drain-source voltage: 650V
Drain current: 12.7A
On-state resistance: 0.165Ω
Power dissipation: 162W
Polarisation: unipolar
Kind of package: tube
Gate charge: 34nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 50A
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247
Type of transistor: N-MOSFET
Case: TO247
Drain-source voltage: 650V
Drain current: 12.7A
On-state resistance: 0.165Ω
Power dissipation: 162W
Polarisation: unipolar
Kind of package: tube
Gate charge: 34nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 50A
Mounting: THT
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| NTPF190N65S3HF |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 409 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 31+ | 207.97 грн |
| 150+ | 167.06 грн |
| MC74ACT541DTG |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
на замовлення 16 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 79.23 грн |
| 7+ | 57.02 грн |
| MC74ACT541DWG |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20-W
Operating temperature: -40...85°C
Manufacturer series: ACT
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Number of channels: 8
Quiescent current: 80µA
Kind of output: 3-state
Kind of package: tube
Kind of integrated circuit: buffer; line driver; non-inverting
Mounting: SMD
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20-W
Operating temperature: -40...85°C
Manufacturer series: ACT
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Number of channels: 8
Quiescent current: 80µA
Kind of output: 3-state
Kind of package: tube
Kind of integrated circuit: buffer; line driver; non-inverting
Mounting: SMD
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| MC74ACT541DWR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: TTL
Mounting: SMD
Case: SOIC20
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: ACT
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: TTL
Mounting: SMD
Case: SOIC20
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Family: ACT
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| MC74ACT541DTR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
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| RB751V40T1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Kind of package: reel; tape
на замовлення 4597 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.43 грн |
| 74+ | 5.21 грн |
| 101+ | 3.82 грн |
| 436+ | 2.05 грн |
| 1198+ | 1.95 грн |
| GBPC3502 |
|
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
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| GBPC3504 |
|
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
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| FDD850N10L |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11.1A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11.1A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2353 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 80.88 грн |
| 7+ | 57.48 грн |
| 20+ | 45.98 грн |
| 55+ | 43.68 грн |
| 500+ | 42.91 грн |
| 74VHCT14AMTCX |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Supply voltage: 4.5...5.5V DC
Number of inputs: 1
Case: TSSOP14
Kind of gate: NOT
Number of channels: hex; 6
Family: VHCT
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Supply voltage: 4.5...5.5V DC
Number of inputs: 1
Case: TSSOP14
Kind of gate: NOT
Number of channels: hex; 6
Family: VHCT
Type of integrated circuit: digital
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| 1N458A |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 150V; 0.5A; bulk; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 150V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: bulk
Case: DO35
Category: THT universal diodes
Description: Diode: switching; THT; 150V; 0.5A; bulk; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 150V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: bulk
Case: DO35
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| 1N458ATR |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 150V; 0.5A; reel,tape; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 150V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: DO35
Category: THT universal diodes
Description: Diode: switching; THT; 150V; 0.5A; reel,tape; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 150V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: DO35
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| NRVTS12120MFST3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 120V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 0.83V
Max. load current: 24A
Max. forward impulse current: 200A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 120V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 0.83V
Max. load current: 24A
Max. forward impulse current: 200A
Kind of package: reel; tape
Application: automotive industry
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од. на суму грн.
| NRVTS12120MFST1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 120V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 0.83V
Max. load current: 24A
Max. forward impulse current: 200A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 12A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 120V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 0.83V
Max. load current: 24A
Max. forward impulse current: 200A
Kind of package: reel; tape
Application: automotive industry
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| NRVTS30120MFST3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. load current: 60A
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. load current: 60A
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Application: automotive industry
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| 1N5354BG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 17V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 17V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 17V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 17V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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| 1N5354BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 17V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 17V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 17V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 17V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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| FDMS7670 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 62W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Power dissipation: 62W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 150A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 62W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Power dissipation: 62W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 150A
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| BC847BDW1T3G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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| SBC847BDW1T3G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| MJE15034G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 4A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 4A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 4A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 4A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
на замовлення 750 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 97.38 грн |
| 10+ | 77.40 грн |
| 16+ | 58.24 грн |
| 43+ | 55.18 грн |
| 250+ | 52.88 грн |