Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MC74AC10DR2G | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: 3 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: SOIC14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC Manufacturer series: AC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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HUF75344P3 | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 75A Power dissipation: 285W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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CAV24C32WE-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32kb EEPROM Interface: I2C Memory organisation: 4kx8bit Operating voltage: 2.5...5.5V Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BCW32LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: reel; tape |
на замовлення 1625 шт: термін постачання 21-30 дні (днів) |
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LM385Z-1.2RPG | ONSEMI |
![]() Description: IC: voltage reference source; 1.235V; ±2%; TO92; Ammo Pack; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.235V Tolerance: ±2% Mounting: THT Case: TO92 Operating temperature: 0...70°C Kind of package: Ammo Pack Maximum output current: 20mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC33074DG | ONSEMI |
![]() Description: IC: operational amplifier; 4.5MHz; Ch: 4; SO14; ±1.5÷22VDC,3÷44VDC Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Mounting: SMT Number of channels: 4 Case: SO14 Slew rate: 13V/μs Operating temperature: -40...85°C Input offset voltage: 7mV Voltage supply range: ± 1.5...22V DC; 3...44V DC Kind of package: tube Input offset current: 300nA Input bias current: 0.7µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
CAT25128VI-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 16kx8bit Access time: 140ns Clock frequency: 20MHz Kind of package: reel; tape Kind of interface: serial Memory: 128kb EEPROM Case: SOIC8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
CAT25128VP2I-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 16kx8bit Access time: 140ns Clock frequency: 20MHz Kind of package: reel; tape Kind of interface: serial Memory: 128kb EEPROM Case: TDFN8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
CAT25128XI-T2 | ONSEMI |
![]() Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 16kx8bit Access time: 140ns Clock frequency: 20MHz Kind of package: reel; tape Kind of interface: serial Memory: 128kb EEPROM Case: SOIC8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
CAT25128YI-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 16kx8bit Access time: 140ns Clock frequency: 20MHz Kind of package: reel; tape Kind of interface: serial Memory: 128kb EEPROM Case: TSSOP8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
CAV25128VE-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz Mounting: SMD Operating temperature: -40...125°C Operating voltage: 2.5...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 16kx8bit Access time: 40ns Clock frequency: 10MHz Kind of package: reel; tape Kind of interface: serial Memory: 128kb EEPROM Case: SOIC8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
CAV25128YE-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz Mounting: SMD Operating temperature: -40...125°C Operating voltage: 2.5...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 16kx8bit Access time: 40ns Clock frequency: 10MHz Kind of package: reel; tape Kind of interface: serial Memory: 128kb EEPROM Case: TSSOP8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
MUR110G | ONSEMI |
![]() Description: Diode: rectifying; THT; 100V; 1A; bulk; DO41; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Case: DO41 Kind of package: bulk Reverse recovery time: 35ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
MUR110RLG | ONSEMI |
![]() Description: Diode: rectifying; THT; 100V; 1A; reel,tape; DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Case: DO41 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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D44VH10G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 100V; 15A; 83W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 15A Power dissipation: 83W Case: TO220AB Mounting: THT Kind of package: tube |
на замовлення 440 шт: термін постачання 21-30 дні (днів) |
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NCP3284AMNTXG | ONSEMI |
![]() Description: IC: PMIC; Uin: 4.5÷18V; Uout: 0.8÷5.5V; buck Type of integrated circuit: PMIC Input voltage: 4.5...18V Output voltage: 0.8...5.5V Output current: 35A Frequency: 0.5...1MHz Mounting: SMD Topology: buck Number of channels: 1 Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NCP3284MNTXG | ONSEMI |
![]() Description: IC: PMIC; Uin: 4.5÷18V; Uout: 0.8÷5.5V; buck Type of integrated circuit: PMIC Input voltage: 4.5...18V Output voltage: 0.8...5.5V Output current: 30A Frequency: 0.5...1MHz Mounting: SMD Topology: buck Number of channels: 1 Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FQU2N100TU | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 1000V; 1A; 50W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1A Power dissipation: 50W Case: IPAK Gate-source voltage: ±30V On-state resistance: 9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FDMC8030 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 14W; WDFN8 Mounting: SMD Case: WDFN8 Drain-source voltage: 40V On-state resistance: 16mΩ Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±12V Power dissipation: 14W Type of transistor: N-MOSFET Drain current: 12A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NRVTS1045EMFST1G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape Type of diode: Schottky rectifying Case: DFN5 Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.6V Max. load current: 20A Max. forward impulse current: 210A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NRVTS1045EMFST3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape Type of diode: Schottky rectifying Case: DFN5 Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.6V Max. load current: 20A Max. forward impulse current: 210A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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H11F3M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 7.5kV; DIP6 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: FET transistor Insulation voltage: 7.5kV Case: DIP6 Turn-on time: 45µs Turn-off time: 45µs Max. off-state voltage: 5V Manufacturer series: H11FXM |
на замовлення 855 шт: термін постачання 21-30 дні (днів) |
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FCB110N65F | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 35A Power dissipation: 357W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 98nC Pulsed drain current: 105A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MJF15030G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 150V; 8A; 36W; TO220FP Mounting: THT Collector-emitter voltage: 150V Current gain: 40 Collector current: 8A Type of transistor: NPN Power dissipation: 36W Polarisation: bipolar Kind of package: tube Case: TO220FP Frequency: 30MHz |
на замовлення 112 шт: термін постачання 21-30 дні (днів) |
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MJF15031G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 150V; 8A; 36W; TO220FP Case: TO220FP Frequency: 30MHz Collector-emitter voltage: 150V Current gain: 40 Collector current: 8A Type of transistor: PNP Power dissipation: 36W Polarisation: bipolar Kind of package: tube Mounting: THT |
на замовлення 74 шт: термін постачання 21-30 дні (днів) |
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MOC3063M | ONSEMI |
![]() Description: Optotriac; 5.3kV; zero voltage crossing driver; DIP6; MOC3063M Type of optocoupler: optotriac Insulation voltage: 5.3kV Kind of output: zero voltage crossing driver Case: DIP6 Mounting: THT Manufacturer series: MOC3063M |
на замовлення 1027 шт: термін постачання 21-30 дні (днів) |
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S210 | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape Mounting: SMD Case: SMB Max. off-state voltage: 100V Max. forward voltage: 0.85V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 50A Kind of package: reel; tape Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S210FA | ONSEMI |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape Mounting: SMD Case: SOD123F Max. off-state voltage: 100V Max. forward voltage: 0.85V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 50A Kind of package: reel; tape Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NTS2101PT1G | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323 Mounting: SMD Case: SC70; SOT323 Drain-source voltage: -8V Drain current: -1.1A On-state resistance: 0.1Ω Type of transistor: P-MOSFET Power dissipation: 0.29W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±8V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDS5351 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 6.1A; 5W; SO8 Case: SO8 Drain-source voltage: 60V Drain current: 6.1A On-state resistance: 58.8mΩ Type of transistor: N-MOSFET Power dissipation: 5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 27nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD |
на замовлення 79 шт: термін постачання 21-30 дні (днів) |
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NTZD3155CT2G | ONSEMI |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 0.39/-0.31A Power dissipation: 0.25W Case: SOT563F Gate-source voltage: ±6V On-state resistance: 0.55/0.9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 3468 шт: термін постачання 21-30 дні (днів) |
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MMBT2369ALT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 0.2A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 40...120 Mounting: SMD Kind of package: reel; tape |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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MUN5131DW1T1G | ONSEMI |
![]() Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: PNP x2 Power dissipation: 0.187W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Mounting: SMD Case: SC70-6; SC88; SOT363 |
на замовлення 770 шт: термін постачання 21-30 дні (днів) |
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NCP1606ADR2G | ONSEMI |
![]() Description: IC: PMIC; -500÷800mA; 9.5÷20VDC; SO8; Topology: boost Type of integrated circuit: PMIC Output current: -500...800mA Mounting: SMD Operating voltage: 9.5...20V DC Number of channels: 1 Operating temperature: -40...125°C Case: SO8 Topology: boost |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCP1606BDR2G | ONSEMI |
![]() Description: IC: PMIC; -500÷800mA; 9.5÷20VDC; SO8; Topology: boost Type of integrated circuit: PMIC Output current: -500...800mA Mounting: SMD Operating voltage: 9.5...20V DC Number of channels: 1 Operating temperature: -40...125°C Case: SO8 Topology: boost |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74HC20ADG | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: dual; 2 Number of inputs: 4 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Family: HC Kind of package: tube Technology: CMOS Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74HC20ADR2G | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: dual; 2 Number of inputs: 4 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Family: HC Kind of package: reel; tape Technology: CMOS Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74HC20ADTR2G | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: dual; 2 Number of inputs: 4 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Family: HC Kind of package: reel; tape Technology: CMOS Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMF12CT1G | ONSEMI |
![]() Description: Diode: TVS array; 13.3÷15V; 6A; 100W; common anode; SC88; Ch: 5; ESD Type of diode: TVS array Breakdown voltage: 13.3...15V Semiconductor structure: common anode Mounting: SMD Case: SC88 Max. off-state voltage: 12V Number of channels: 5 Kind of package: reel; tape Max. forward impulse current: 6A Leakage current: 0.1µA Version: ESD Peak pulse power dissipation: 0.1kW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
SZSMF12CT1G | ONSEMI |
![]() Description: Diode: TVS array; 6.2÷7.2V; unidirectional; SC88; Ch: 5; reel,tape Type of diode: TVS array Breakdown voltage: 6.2...7.2V Semiconductor structure: unidirectional Mounting: SMD Case: SC88 Max. off-state voltage: 5V Number of channels: 5 Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
MBT3904DW1T3G | ONSEMI |
![]() Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363 Kind of package: reel; tape Frequency: 300MHz Collector-emitter voltage: 40V Current gain: 100...300 Collector current: 0.2A Type of transistor: NPN x2 Power dissipation: 0.15W Polarisation: bipolar Mounting: SMD Case: SC70-6; SC88; SOT363 |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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GBPC1202 | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 200V; If: 12A; Ifsm: 300A Leads: connectors FASTON Max. off-state voltage: 200V Max. forward voltage: 1.1V Load current: 12A Max. forward impulse current: 0.3kA Kind of package: bulk Electrical mounting: THT Version: square Type of bridge rectifier: single-phase Case: GBPC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FODM8061 | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: open collector; 3.75kV; 40kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: open collector Insulation voltage: 3.75kV Case: Mini-flat 4pin Slew rate: 40kV/μs |
на замовлення 1867 шт: термін постачання 21-30 дні (днів) |
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FODM8061R2 | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 3.75kV; 10Mbps Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: gate; logic Insulation voltage: 3.75kV Transfer rate: 10Mbps Case: MFP5 Slew rate: 40kV/μs Max. off-state voltage: 5V Output voltage: -500mV...7.5V Manufacturer series: FODM8061 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDV305N | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 0.9A; 0.35W; SOT23 Drain-source voltage: 20V Drain current: 0.9A On-state resistance: 303mΩ Type of transistor: N-MOSFET Power dissipation: 0.35W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.5nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±12V Mounting: SMD Case: SOT23 |
на замовлення 3199 шт: термін постачання 21-30 дні (днів) |
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1N4148-T26A | ONSEMI |
![]() Description: Diode: switching; THT; 100V; 0.3A; Ammo Pack; DO35; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.3A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: Ammo Pack Case: DO35 Reverse recovery time: 4ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1N3595TR | ONSEMI |
![]() Description: Diode: rectifying; THT; 150V; 200mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 3uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 8pF Max. forward impulse current: 4A Case: DO35 Max. forward voltage: 1V Leakage current: 3µA Power dissipation: 0.5W Reverse recovery time: 3µs |
на замовлення 5359 шт: термін постачання 21-30 дні (днів) |
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FXMA108BQX | ONSEMI |
![]() Description: IC: digital; Ch: 8; 1.65÷5.5VDC; SMD; DQFN20; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting Number of channels: 8 Supply voltage: 1.65...5.5V DC Mounting: SMD Case: DQFN20 Operating temperature: -40...85°C Kind of package: reel; tape Number of inputs: 8 Number of outputs: 8 Integrated circuit features: auto-direction sensing Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NCP1607BDR2G | ONSEMI |
![]() Description: IC: PMIC; 500÷800mA; 9.5÷20VDC; SO8; Topology: boost Type of integrated circuit: PMIC Output current: 500...800mA Mounting: SMD Operating voltage: 9.5...20V DC Number of channels: 1 Operating temperature: -40...125°C Case: SO8 Topology: boost |
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В кошику од. на суму грн. | ||||||||||||||||
FDH300A | ONSEMI |
![]() Description: Diode: switching; THT; 125V; 0.5A; bulk; DO35 Mounting: THT Case: DO35 Max. off-state voltage: 125V Load current: 0.5A Semiconductor structure: single diode Kind of package: bulk Type of diode: switching Features of semiconductor devices: small signal |
на замовлення 4990 шт: термін постачання 21-30 дні (днів) |
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ES1G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMA Max. forward voltage: 1.3V Leakage current: 0.1mA Kind of package: reel; tape Max. forward impulse current: 30A Capacitance: 10pF Power dissipation: 1.47W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MJ11033G | ONSEMI |
![]() ![]() Description: Transistor: PNP; bipolar; Darlington; 120V; 50A; 300W; TO3 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 120V Collector current: 50A Power dissipation: 300W Case: TO3 Mounting: THT Kind of package: in-tray |
на замовлення 57 шт: термін постачання 21-30 дні (днів) |
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MC74VHCT245ADWG | ONSEMI |
![]() Description: IC: digital; bus transceiver,octal; Ch: 8; CMOS,TTL; SMD; SO20WB Type of integrated circuit: digital Kind of integrated circuit: bus transceiver; octal Number of channels: 8 Mounting: SMD Case: SO20WB Supply voltage: 4.5...5.5V DC Family: VHCT Kind of package: reel; tape Manufacturer series: VHCT Technology: CMOS; TTL Operating temperature: -40...85°C |
на замовлення 34 шт: термін постачання 21-30 дні (днів) |
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74VHCT245AMTCX | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 4.5...5.5V DC Kind of output: 3-state Quiescent current: 40µA Kind of package: reel; tape Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
MC74VHCT245ADTG | ONSEMI |
![]() Description: IC: digital; bus transceiver,octal; Ch: 8; CMOS,TTL; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: bus transceiver; octal Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 4.5...5.5V DC Family: VHCT Kind of package: reel; tape Manufacturer series: VHCT Technology: CMOS; TTL Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC74VHCT245ADTRG | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 4.5...5.5V DC Kind of output: 3-state Quiescent current: 40µA Kind of package: reel; tape Manufacturer series: VHCT Technology: CMOS Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
MC74VHCT245ADWRG | ONSEMI |
![]() Description: IC: digital; bus transceiver,octal; Ch: 8; CMOS,TTL; SMD; SO20WB Type of integrated circuit: digital Kind of integrated circuit: bus transceiver; octal Number of channels: 8 Mounting: SMD Case: SO20WB Supply voltage: 4.5...5.5V DC Family: VHCT Kind of package: reel; tape Manufacturer series: VHCT Technology: CMOS; TTL Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NRVB1H100SFT3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SOD123; SMD; 100V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123 Mounting: SMD Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.84V Max. forward impulse current: 50A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MUN5211T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Case: SC70; SOT323 Collector-emitter voltage: 50V Current gain: 60 Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.31W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 10kΩ Mounting: SMD |
на замовлення 554 шт: термін постачання 21-30 дні (днів) |
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SMUN5211T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Case: SC70; SOT323 Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: NPN Application: automotive industry Power dissipation: 0.31W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 10kΩ Mounting: SMD |
на замовлення 38 шт: термін постачання 21-30 дні (днів) |
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MC74AC10DR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
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HUF75344P3 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 285W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 285W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 30 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 199.51 грн |
7+ | 150.38 грн |
17+ | 141.85 грн |
CAV24C32WE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
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BCW32LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
на замовлення 1625 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.52 грн |
50+ | 7.75 грн |
63+ | 6.20 грн |
108+ | 3.61 грн |
131+ | 2.97 грн |
434+ | 2.09 грн |
1000+ | 1.97 грн |
1500+ | 1.90 грн |
LM385Z-1.2RPG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±2%; TO92; Ammo Pack; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.235V
Tolerance: ±2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: Ammo Pack
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±2%; TO92; Ammo Pack; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.235V
Tolerance: ±2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: Ammo Pack
Maximum output current: 20mA
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MC33074DG |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; SO14; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 13V/μs
Operating temperature: -40...85°C
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: tube
Input offset current: 300nA
Input bias current: 0.7µA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; SO14; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 13V/μs
Operating temperature: -40...85°C
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: tube
Input offset current: 300nA
Input bias current: 0.7µA
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CAT25128VI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 16kx8bit
Access time: 140ns
Clock frequency: 20MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 128kb EEPROM
Case: SOIC8
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 16kx8bit
Access time: 140ns
Clock frequency: 20MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 128kb EEPROM
Case: SOIC8
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CAT25128VP2I-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 16kx8bit
Access time: 140ns
Clock frequency: 20MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 128kb EEPROM
Case: TDFN8
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 16kx8bit
Access time: 140ns
Clock frequency: 20MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 128kb EEPROM
Case: TDFN8
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CAT25128XI-T2 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 16kx8bit
Access time: 140ns
Clock frequency: 20MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 128kb EEPROM
Case: SOIC8
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 16kx8bit
Access time: 140ns
Clock frequency: 20MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 128kb EEPROM
Case: SOIC8
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CAT25128YI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 16kx8bit
Access time: 140ns
Clock frequency: 20MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 128kb EEPROM
Case: TSSOP8
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 16kx8bit
Access time: 140ns
Clock frequency: 20MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 128kb EEPROM
Case: TSSOP8
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CAV25128VE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 2.5...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 16kx8bit
Access time: 40ns
Clock frequency: 10MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 128kb EEPROM
Case: SOIC8
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 2.5...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 16kx8bit
Access time: 40ns
Clock frequency: 10MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 128kb EEPROM
Case: SOIC8
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CAV25128YE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 2.5...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 16kx8bit
Access time: 40ns
Clock frequency: 10MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 128kb EEPROM
Case: TSSOP8
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 2.5...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 16kx8bit
Access time: 40ns
Clock frequency: 10MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 128kb EEPROM
Case: TSSOP8
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MUR110G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; bulk; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Kind of package: bulk
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; bulk; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Kind of package: bulk
Reverse recovery time: 35ns
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MUR110RLG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; reel,tape; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; reel,tape; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
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D44VH10G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 15A; 83W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 15A; 83W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 15A
Power dissipation: 83W
Case: TO220AB
Mounting: THT
Kind of package: tube
на замовлення 440 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 68.45 грн |
10+ | 53.33 грн |
22+ | 42.09 грн |
60+ | 39.84 грн |
250+ | 38.29 грн |
NCP3284AMNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷18V; Uout: 0.8÷5.5V; buck
Type of integrated circuit: PMIC
Input voltage: 4.5...18V
Output voltage: 0.8...5.5V
Output current: 35A
Frequency: 0.5...1MHz
Mounting: SMD
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷18V; Uout: 0.8÷5.5V; buck
Type of integrated circuit: PMIC
Input voltage: 4.5...18V
Output voltage: 0.8...5.5V
Output current: 35A
Frequency: 0.5...1MHz
Mounting: SMD
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
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NCP3284MNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷18V; Uout: 0.8÷5.5V; buck
Type of integrated circuit: PMIC
Input voltage: 4.5...18V
Output voltage: 0.8...5.5V
Output current: 30A
Frequency: 0.5...1MHz
Mounting: SMD
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷18V; Uout: 0.8÷5.5V; buck
Type of integrated circuit: PMIC
Input voltage: 4.5...18V
Output voltage: 0.8...5.5V
Output current: 30A
Frequency: 0.5...1MHz
Mounting: SMD
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
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FQU2N100TU |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1A; 50W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1A
Power dissipation: 50W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1A; 50W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 1A
Power dissipation: 50W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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FDMC8030 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 14W; WDFN8
Mounting: SMD
Case: WDFN8
Drain-source voltage: 40V
On-state resistance: 16mΩ
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Power dissipation: 14W
Type of transistor: N-MOSFET
Drain current: 12A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; 14W; WDFN8
Mounting: SMD
Case: WDFN8
Drain-source voltage: 40V
On-state resistance: 16mΩ
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Power dissipation: 14W
Type of transistor: N-MOSFET
Drain current: 12A
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NRVTS1045EMFST1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. load current: 20A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. load current: 20A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
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NRVTS1045EMFST3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. load current: 20A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. load current: 20A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
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H11F3M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 7.5kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: FET transistor
Insulation voltage: 7.5kV
Case: DIP6
Turn-on time: 45µs
Turn-off time: 45µs
Max. off-state voltage: 5V
Manufacturer series: H11FXM
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 7.5kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: FET transistor
Insulation voltage: 7.5kV
Case: DIP6
Turn-on time: 45µs
Turn-off time: 45µs
Max. off-state voltage: 5V
Manufacturer series: H11FXM
на замовлення 855 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 289.67 грн |
6+ | 175.18 грн |
15+ | 165.88 грн |
100+ | 162.78 грн |
500+ | 158.90 грн |
FCB110N65F |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 98nC
Pulsed drain current: 105A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 98nC
Pulsed drain current: 105A
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MJF15030G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 36W; TO220FP
Mounting: THT
Collector-emitter voltage: 150V
Current gain: 40
Collector current: 8A
Type of transistor: NPN
Power dissipation: 36W
Polarisation: bipolar
Kind of package: tube
Case: TO220FP
Frequency: 30MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 36W; TO220FP
Mounting: THT
Collector-emitter voltage: 150V
Current gain: 40
Collector current: 8A
Type of transistor: NPN
Power dissipation: 36W
Polarisation: bipolar
Kind of package: tube
Case: TO220FP
Frequency: 30MHz
на замовлення 112 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 106.85 грн |
10+ | 82.17 грн |
15+ | 63.56 грн |
40+ | 60.46 грн |
MJF15031G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 8A; 36W; TO220FP
Case: TO220FP
Frequency: 30MHz
Collector-emitter voltage: 150V
Current gain: 40
Collector current: 8A
Type of transistor: PNP
Power dissipation: 36W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 8A; 36W; TO220FP
Case: TO220FP
Frequency: 30MHz
Collector-emitter voltage: 150V
Current gain: 40
Collector current: 8A
Type of transistor: PNP
Power dissipation: 36W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
на замовлення 74 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 146.92 грн |
10+ | 94.57 грн |
11+ | 90.69 грн |
28+ | 85.27 грн |
50+ | 82.94 грн |
MOC3063M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; zero voltage crossing driver; DIP6; MOC3063M
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: zero voltage crossing driver
Case: DIP6
Mounting: THT
Manufacturer series: MOC3063M
Category: Optotriacs
Description: Optotriac; 5.3kV; zero voltage crossing driver; DIP6; MOC3063M
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: zero voltage crossing driver
Case: DIP6
Mounting: THT
Manufacturer series: MOC3063M
на замовлення 1027 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 62.61 грн |
10+ | 42.01 грн |
28+ | 32.48 грн |
77+ | 30.70 грн |
500+ | 30.23 грн |
1000+ | 29.53 грн |
S210 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SMB
Max. off-state voltage: 100V
Max. forward voltage: 0.85V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SMB
Max. off-state voltage: 100V
Max. forward voltage: 0.85V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of diode: Schottky rectifying
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S210FA |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SOD123F
Max. off-state voltage: 100V
Max. forward voltage: 0.85V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape
Mounting: SMD
Case: SOD123F
Max. off-state voltage: 100V
Max. forward voltage: 0.85V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of diode: Schottky rectifying
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NTS2101PT1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323
Mounting: SMD
Case: SC70; SOT323
Drain-source voltage: -8V
Drain current: -1.1A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 0.29W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323
Mounting: SMD
Case: SC70; SOT323
Drain-source voltage: -8V
Drain current: -1.1A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 0.29W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±8V
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FDS5351 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.1A; 5W; SO8
Case: SO8
Drain-source voltage: 60V
Drain current: 6.1A
On-state resistance: 58.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 27nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.1A; 5W; SO8
Case: SO8
Drain-source voltage: 60V
Drain current: 6.1A
On-state resistance: 58.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 27nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
на замовлення 79 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 70.12 грн |
10+ | 48.29 грн |
34+ | 27.36 грн |
NTZD3155CT2G |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 3468 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 25.88 грн |
25+ | 15.50 грн |
33+ | 11.94 грн |
100+ | 8.22 грн |
130+ | 6.98 грн |
358+ | 6.59 грн |
500+ | 6.36 грн |
MMBT2369ALT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
на замовлення 300 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.69 грн |
61+ | 6.36 грн |
78+ | 5.02 грн |
91+ | 4.26 грн |
101+ | 3.85 грн |
108+ | 3.60 грн |
MUN5131DW1T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.187W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.187W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
на замовлення 770 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
120+ | 3.59 грн |
200+ | 1.98 грн |
500+ | 1.75 грн |
595+ | 1.53 грн |
NCP1606ADR2G |
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Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
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NCP1606BDR2G |
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Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
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MC74HC20ADG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: tube
Technology: CMOS
Operating temperature: -55...125°C
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: tube
Technology: CMOS
Operating temperature: -55...125°C
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MC74HC20ADR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Technology: CMOS
Operating temperature: -55...125°C
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Technology: CMOS
Operating temperature: -55...125°C
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MC74HC20ADTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Technology: CMOS
Operating temperature: -55...125°C
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: dual; 2
Number of inputs: 4
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Technology: CMOS
Operating temperature: -55...125°C
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SMF12CT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3÷15V; 6A; 100W; common anode; SC88; Ch: 5; ESD
Type of diode: TVS array
Breakdown voltage: 13.3...15V
Semiconductor structure: common anode
Mounting: SMD
Case: SC88
Max. off-state voltage: 12V
Number of channels: 5
Kind of package: reel; tape
Max. forward impulse current: 6A
Leakage current: 0.1µA
Version: ESD
Peak pulse power dissipation: 0.1kW
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3÷15V; 6A; 100W; common anode; SC88; Ch: 5; ESD
Type of diode: TVS array
Breakdown voltage: 13.3...15V
Semiconductor structure: common anode
Mounting: SMD
Case: SC88
Max. off-state voltage: 12V
Number of channels: 5
Kind of package: reel; tape
Max. forward impulse current: 6A
Leakage current: 0.1µA
Version: ESD
Peak pulse power dissipation: 0.1kW
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SZSMF12CT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2÷7.2V; unidirectional; SC88; Ch: 5; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.2...7.2V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC88
Max. off-state voltage: 5V
Number of channels: 5
Kind of package: reel; tape
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2÷7.2V; unidirectional; SC88; Ch: 5; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.2...7.2V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC88
Max. off-state voltage: 5V
Number of channels: 5
Kind of package: reel; tape
Application: automotive industry
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MBT3904DW1T3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Kind of package: reel; tape
Frequency: 300MHz
Collector-emitter voltage: 40V
Current gain: 100...300
Collector current: 0.2A
Type of transistor: NPN x2
Power dissipation: 0.15W
Polarisation: bipolar
Mounting: SMD
Case: SC70-6; SC88; SOT363
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Kind of package: reel; tape
Frequency: 300MHz
Collector-emitter voltage: 40V
Current gain: 100...300
Collector current: 0.2A
Type of transistor: NPN x2
Power dissipation: 0.15W
Polarisation: bipolar
Mounting: SMD
Case: SC70-6; SC88; SOT363
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
75+ | 5.63 грн |
105+ | 3.72 грн |
140+ | 2.78 грн |
500+ | 2.09 грн |
632+ | 1.44 грн |
1736+ | 1.36 грн |
GBPC1202 |
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Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 12A; Ifsm: 300A
Leads: connectors FASTON
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Electrical mounting: THT
Version: square
Type of bridge rectifier: single-phase
Case: GBPC
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 12A; Ifsm: 300A
Leads: connectors FASTON
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 12A
Max. forward impulse current: 0.3kA
Kind of package: bulk
Electrical mounting: THT
Version: square
Type of bridge rectifier: single-phase
Case: GBPC
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FODM8061 |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; 3.75kV; 40kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: Mini-flat 4pin
Slew rate: 40kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; 3.75kV; 40kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: Mini-flat 4pin
Slew rate: 40kV/μs
на замовлення 1867 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 231.23 грн |
5+ | 145.73 грн |
8+ | 122.47 грн |
21+ | 115.50 грн |
100+ | 111.62 грн |
FODM8061R2 |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 3.75kV; 10Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Insulation voltage: 3.75kV
Transfer rate: 10Mbps
Case: MFP5
Slew rate: 40kV/μs
Max. off-state voltage: 5V
Output voltage: -500mV...7.5V
Manufacturer series: FODM8061
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 3.75kV; 10Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Insulation voltage: 3.75kV
Transfer rate: 10Mbps
Case: MFP5
Slew rate: 40kV/μs
Max. off-state voltage: 5V
Output voltage: -500mV...7.5V
Manufacturer series: FODM8061
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FDV305N |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.9A; 0.35W; SOT23
Drain-source voltage: 20V
Drain current: 0.9A
On-state resistance: 303mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.5nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: SOT23
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.9A; 0.35W; SOT23
Drain-source voltage: 20V
Drain current: 0.9A
On-state resistance: 303mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.5nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: SOT23
на замовлення 3199 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.38 грн |
22+ | 17.98 грн |
26+ | 15.19 грн |
50+ | 10.62 грн |
100+ | 9.22 грн |
122+ | 7.44 грн |
335+ | 7.05 грн |
1N4148-T26A |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ammo Pack; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: Ammo Pack
Case: DO35
Reverse recovery time: 4ns
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ammo Pack; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: Ammo Pack
Case: DO35
Reverse recovery time: 4ns
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1N3595TR |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 200mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 3uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 8pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Leakage current: 3µA
Power dissipation: 0.5W
Reverse recovery time: 3µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 200mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 3uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 8pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Leakage current: 3µA
Power dissipation: 0.5W
Reverse recovery time: 3µs
на замовлення 5359 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.35 грн |
66+ | 5.89 грн |
100+ | 3.97 грн |
400+ | 2.27 грн |
1098+ | 2.15 грн |
FXMA108BQX |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 8; 1.65÷5.5VDC; SMD; DQFN20; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 8
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: DQFN20
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 8
Number of outputs: 8
Integrated circuit features: auto-direction sensing
Frequency: 100MHz
Category: Level translators
Description: IC: digital; Ch: 8; 1.65÷5.5VDC; SMD; DQFN20; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 8
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: DQFN20
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 8
Number of outputs: 8
Integrated circuit features: auto-direction sensing
Frequency: 100MHz
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NCP1607BDR2G |
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Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: 500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
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FDH300A |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; bulk; DO35
Mounting: THT
Case: DO35
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Kind of package: bulk
Type of diode: switching
Features of semiconductor devices: small signal
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; bulk; DO35
Mounting: THT
Case: DO35
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Kind of package: bulk
Type of diode: switching
Features of semiconductor devices: small signal
на замовлення 4990 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 14.02 грн |
43+ | 9.15 грн |
56+ | 7.01 грн |
100+ | 4.98 грн |
377+ | 2.40 грн |
1037+ | 2.27 грн |
ES1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMA
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Kind of package: reel; tape
Max. forward impulse current: 30A
Capacitance: 10pF
Power dissipation: 1.47W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMA
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Kind of package: reel; tape
Max. forward impulse current: 30A
Capacitance: 10pF
Power dissipation: 1.47W
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MJ11033G | ![]() |
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Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 50A; 300W; TO3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 50A
Power dissipation: 300W
Case: TO3
Mounting: THT
Kind of package: in-tray
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 50A; 300W; TO3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 50A
Power dissipation: 300W
Case: TO3
Mounting: THT
Kind of package: in-tray
на замовлення 57 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1141.97 грн |
2+ | 852.66 грн |
3+ | 805.37 грн |
25+ | 769.72 грн |
MC74VHCT245ADWG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus transceiver,octal; Ch: 8; CMOS,TTL; SMD; SO20WB
Type of integrated circuit: digital
Kind of integrated circuit: bus transceiver; octal
Number of channels: 8
Mounting: SMD
Case: SO20WB
Supply voltage: 4.5...5.5V DC
Family: VHCT
Kind of package: reel; tape
Manufacturer series: VHCT
Technology: CMOS; TTL
Operating temperature: -40...85°C
Category: Buffers, transceivers, drivers
Description: IC: digital; bus transceiver,octal; Ch: 8; CMOS,TTL; SMD; SO20WB
Type of integrated circuit: digital
Kind of integrated circuit: bus transceiver; octal
Number of channels: 8
Mounting: SMD
Case: SO20WB
Supply voltage: 4.5...5.5V DC
Family: VHCT
Kind of package: reel; tape
Manufacturer series: VHCT
Technology: CMOS; TTL
Operating temperature: -40...85°C
на замовлення 34 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 115.20 грн |
10+ | 65.73 грн |
23+ | 40.07 грн |
74VHCT245AMTCX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Quiescent current: 40µA
Kind of package: reel; tape
Operating temperature: -40...85°C
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Quiescent current: 40µA
Kind of package: reel; tape
Operating temperature: -40...85°C
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MC74VHCT245ADTG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus transceiver,octal; Ch: 8; CMOS,TTL; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: bus transceiver; octal
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Family: VHCT
Kind of package: reel; tape
Manufacturer series: VHCT
Technology: CMOS; TTL
Operating temperature: -40...85°C
Category: Buffers, transceivers, drivers
Description: IC: digital; bus transceiver,octal; Ch: 8; CMOS,TTL; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: bus transceiver; octal
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Family: VHCT
Kind of package: reel; tape
Manufacturer series: VHCT
Technology: CMOS; TTL
Operating temperature: -40...85°C
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MC74VHCT245ADTRG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Quiescent current: 40µA
Kind of package: reel; tape
Manufacturer series: VHCT
Technology: CMOS
Operating temperature: -40...85°C
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Quiescent current: 40µA
Kind of package: reel; tape
Manufacturer series: VHCT
Technology: CMOS
Operating temperature: -40...85°C
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MC74VHCT245ADWRG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus transceiver,octal; Ch: 8; CMOS,TTL; SMD; SO20WB
Type of integrated circuit: digital
Kind of integrated circuit: bus transceiver; octal
Number of channels: 8
Mounting: SMD
Case: SO20WB
Supply voltage: 4.5...5.5V DC
Family: VHCT
Kind of package: reel; tape
Manufacturer series: VHCT
Technology: CMOS; TTL
Operating temperature: -40...85°C
Category: Buffers, transceivers, drivers
Description: IC: digital; bus transceiver,octal; Ch: 8; CMOS,TTL; SMD; SO20WB
Type of integrated circuit: digital
Kind of integrated circuit: bus transceiver; octal
Number of channels: 8
Mounting: SMD
Case: SO20WB
Supply voltage: 4.5...5.5V DC
Family: VHCT
Kind of package: reel; tape
Manufacturer series: VHCT
Technology: CMOS; TTL
Operating temperature: -40...85°C
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NRVB1H100SFT3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.84V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.84V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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MUN5211T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Case: SC70; SOT323
Collector-emitter voltage: 50V
Current gain: 60
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.31W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Case: SC70; SOT323
Collector-emitter voltage: 50V
Current gain: 60
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.31W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
на замовлення 554 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.85 грн |
61+ | 6.43 грн |
100+ | 3.93 грн |
500+ | 2.86 грн |
534+ | 1.71 грн |
SMUN5211T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Case: SC70; SOT323
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 0.31W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Case: SC70; SOT323
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN
Application: automotive industry
Power dissipation: 0.31W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
на замовлення 38 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.36 грн |
38+ | 10.08 грн |