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2V7002KT1G 2V7002KT1G ONSEMI 2n7002k-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
27+15.82 грн
46+8.43 грн
67+5.82 грн
100+5.08 грн
291+3.11 грн
799+2.94 грн
2000+2.82 грн
Мінімальне замовлення: 27
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FFSH2065B-F085 ONSEMI ffsh2065b-f085-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 22.3A; TO247-2; tube
Mounting: THT
Max. off-state voltage: 650V
Load current: 22.3A
Semiconductor structure: single diode
Application: automotive industry
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-2
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FFSH2065BDN-F085 ONSEMI ffsh2065bdn-f085-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; tube
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: common cathode; double
Application: automotive industry
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
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NLSX5011AMUTCG ONSEMI NLSX5011AMUTCG.pdf Category: Level translators
Description: IC: digital; Ch: 1; 0.9÷4.5VDC; SMD; uDFN6; -55÷125°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 1
Supply voltage: 0.9...4.5V DC
Mounting: SMD
Case: uDFN6
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 1
Number of outputs: 1
Integrated circuit features: auto-direction sensing
Frequency: 100MHz
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NZ9F22VT5G ONSEMI NZ9Fxx.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 22V; SMD; reel,tape; SOD923; single diode; NZ9F
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD923
Semiconductor structure: single diode
Manufacturer series: NZ9F
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QRE1113GR ONSEMI qre1113-d.pdf Category: Sensors and Transducers - Unclassified
Description: QRE1113GR
на замовлення 25000 шт:
термін постачання 21-30 дні (днів)
1000+25.40 грн
Мінімальне замовлення: 1000
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SS18 SS18 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BC80F478116040C4&compId=SSxx.pdf?ci_sign=2bedf5667bd971c989f277b0833ac0b4e538a06e Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 80V; 1A; reel,tape; 1.1W
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 80V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 1.1W
на замовлення 3660 шт:
термін постачання 21-30 дні (днів)
14+30.81 грн
18+22.35 грн
50+16.86 грн
66+13.84 грн
181+13.07 грн
500+12.60 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
BZX84C47LT1G BZX84C47LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
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BZX84C47LT1G BZX84C47LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
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SZBZX84C47LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
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SZBZX84C22ET1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 22V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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SZBZX84C22LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 22V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
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SS35 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BC8336EF0D4460C4&compId=SS32_SS39.pdf?ci_sign=8fa34ffef8d0a5973b77e4f15c0e2810f8a6bada Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 50V; 3A; reel,tape; 2.27W
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
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1SS351-TB-E ONSEMI Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC59; SMD; 5V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SC59
Mounting: SMD
Max. off-state voltage: 5V
Load current: 30mA
Semiconductor structure: double series
Max. forward voltage: 0.23V
Kind of package: reel; tape
Capacitance: 0.9pF
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BZX84C24LT1G BZX84C24LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 description Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 24V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
на замовлення 3073 шт:
термін постачання 21-30 дні (днів)
55+7.61 грн
95+4.10 грн
133+2.92 грн
146+2.66 грн
155+2.51 грн
673+1.35 грн
1500+1.29 грн
1850+1.28 грн
3000+1.23 грн
Мінімальне замовлення: 55
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SZBZX84C24LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 24V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
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BYV32-200G BYV32-200G ONSEMI byv32-200-d.pdf Category: THT universal diodes
Description: Diode: switching; THT; 200V; 16A; tube; Ifsm: 100A; TO220AB; Ir: 600uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 16A
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AB
Max. forward voltage: 1.15V
Leakage current: 0.6mA
Reverse recovery time: 35ns
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GBPC2506 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
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GBPC2506W ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
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NTS4409NT1G NTS4409NT1G ONSEMI NTS4409N.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.75A; 0.28W; SC70,SOT323
Case: SC70; SOT323
Drain-source voltage: 25V
Drain current: 0.75A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 0.28W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.2nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
на замовлення 2110 шт:
термін постачання 21-30 дні (днів)
13+33.31 грн
18+22.04 грн
50+14.92 грн
100+12.60 грн
102+8.89 грн
279+8.43 грн
1000+8.12 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
NLV14024BDR2G NLV14024BDR2G ONSEMI mc14024b-d.pdf Category: Counters/dividers
Description: IC: digital; asynchronous counter; TTL; SMD; SO14; 3÷18VDC; 600uA
Mounting: SMD
Operating temperature: -55...125°C
Case: SO14
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Quiescent current: 600µA
Application: automotive industry
Kind of package: reel; tape
Technology: TTL
Kind of integrated circuit: asynchronous counter
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NSQA6V8AW5T2G ONSEMI nsqa6v8aw5t2-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A
Type of diode: TVS array
Breakdown voltage: 6.4...7.1V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 5V
Kind of package: reel; tape
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SZNSQA6V8AW5T2G ONSEMI nsqa6v8aw5t2-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A
Type of diode: TVS array
Breakdown voltage: 6.4...7.1V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
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NC7S04M5X NC7S04M5X ONSEMI NC7S04.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Mounting: SMD
Case: SOT23-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Number of inputs: 1
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
25+16.66 грн
46+8.43 грн
63+6.19 грн
100+5.39 грн
203+4.50 грн
500+4.06 грн
Мінімальне замовлення: 25
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NC7S04P5X NC7S04P5X ONSEMI NC7S04.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC70-5; 2÷6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
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PCRU3060W ONSEMI Category: Transistors - Unclassified
Description: PCRU3060W
на замовлення 24079 шт:
термін постачання 21-30 дні (днів)
3+192.37 грн
Мінімальне замовлення: 3
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FODM8071 FODM8071 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE786D5AC3177A38745&compId=FODM8071.pdf?ci_sign=294d9e42a972d807273d8786b500d390b74220c8 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 20Mbps; 40kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Transfer rate: 20Mbps
Case: Mini-flat 5pin
Turn-on time: 5.8ns
Turn-off time: 5.3µs
Slew rate: 40kV/μs
на замовлення 1445 шт:
термін постачання 21-30 дні (днів)
2+272.31 грн
5+179.40 грн
8+129.91 грн
20+122.95 грн
200+121.40 грн
500+117.54 грн
Мінімальне замовлення: 2
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NCP51400MNTXG ONSEMI NCP51400.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Operating voltage: 0.5...1.8/2.375...5.5V DC
Case: DFN10
Mounting: SMD
Operating temperature: -40...125°C
Output voltage: -0.1...3.5V
Output current: 3A
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
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NCV51400MNTXG ONSEMI NCP51400.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Operating voltage: 0.5...1.8/2.375...5.5V DC
Case: DFN10
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
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NCV51400MWTXG ONSEMI NCP51400.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Operating voltage: 0.5...1.8/2.375...5.5V DC
Case: DFN10
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
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S215FA ONSEMI ss29fa-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 150V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Kind of package: reel; tape
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MC74VHC4052DR2G MC74VHC4052DR2G ONSEMI MC74VHC4051-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: VHC
Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC
Family: VHC
Kind of package: reel; tape
Operating temperature: -55...125°C
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MC74VHC4052DTR2G ONSEMI MC74VHC4051-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC
Family: VHC
Kind of package: reel; tape
Operating temperature: -55...125°C
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MC33179DR2G MC33179DR2G ONSEMI MC33179DG.PDF Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 4; SO14; ±2÷18VDC,4÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 2V/μs
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Kind of package: reel; tape
на замовлення 201 шт:
термін постачання 21-30 дні (днів)
5+100.76 грн
10+47.71 грн
23+39.98 грн
50+38.66 грн
63+37.81 грн
100+36.34 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SS33 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BC8336EF0D4460C4&compId=SS32_SS39.pdf?ci_sign=8fa34ffef8d0a5973b77e4f15c0e2810f8a6bada Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape; 2.27W
Mounting: SMD
Max. forward voltage: 0.5V
Max. off-state voltage: 30V
Case: SMC
Kind of package: reel; tape
Type of diode: Schottky rectifying
Power dissipation: 2.27W
Max. forward impulse current: 100A
Semiconductor structure: single diode
Load current: 3A
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ESD7461N2T5G ONSEMI Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.3W; 16.5V; bidirectional; XDFN2; reel,tape; ESD
Version: ESD
Capacitance: 0.3pF
Max. off-state voltage: 16V
Semiconductor structure: bidirectional
Breakdown voltage: 16.5V
Leakage current: 0.1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.3W
Mounting: SMD
Case: XDFN2
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SMMSD301T1G ONSEMI mmsd301t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
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MMDL770T1G MMDL770T1G ONSEMI mmdl770t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Semiconductor structure: single diode
Capacitance: 1pF
Max. forward voltage: 1V
Kind of package: reel; tape
Power dissipation: 0.2W
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HCPL4503SDM ONSEMI hcpl2530m-d.pdf Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
на замовлення 26000 шт:
термін постачання 21-30 дні (днів)
1000+41.06 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
NTD20P06LT4G NTD20P06LT4G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A89E7BC6C8FF9E27&compId=NTD20P06-DTE.PDF?ci_sign=cd706c4a6fc93bc90b41bca030c4664c37cc4ead Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15.5A
Power dissipation: 65W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2464 шт:
термін постачання 21-30 дні (днів)
5+95.77 грн
10+61.78 грн
29+31.40 грн
80+29.62 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSS138K ONSEMI bss138k-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.4nC
на замовлення 8800 шт:
термін постачання 21-30 дні (днів)
50+8.33 грн
72+5.41 грн
120+3.23 грн
250+2.94 грн
406+2.23 грн
1115+2.11 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BSS138 ONSEMI bss138-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.7nC
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RGF1K ONSEMI RGF1M-D.PDF Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
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GF1K ONSEMI GF1M-D.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
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BCP55 BCP55 ONSEMI bcp55-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1.5A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
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RB521S30T5G ONSEMI rb521s30t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
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NSVRB521S30T5G ONSEMI rb521s30t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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MBR30H100MFST3G ONSEMI mbr30h100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Mounting: SMD
Max. off-state voltage: 100V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
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MBR30H100CTG ONSEMI mbr30h100ct-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. forward impulse current: 250A
Kind of package: tube
Max. load current: 30A
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NRVB30H100MFST1G ONSEMI mbr30h100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DFN5
Max. off-state voltage: 100V
Max. load current: 60A
Max. forward voltage: 0.9V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 0.3kA
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NRVB30H100MFST3G ONSEMI mbr30h100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DFN5
Max. off-state voltage: 100V
Max. load current: 60A
Max. forward voltage: 0.9V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 0.3kA
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2SK3557-6-TB-E ONSEMI 2sk3557-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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2SK3557-7-TB-E ONSEMI 2sk3557-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 16mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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MMBZ6V8ALT1G MMBZ6V8ALT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEDED6F98B88AA14&compId=MMBZ_ser.PDF?ci_sign=1f35ddf42140d92ef46c86e862bfcafdd39158da Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 24W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Kind of package: reel; tape
Peak pulse power dissipation: 24W
Tolerance: ±5%
Max. forward impulse current: 2.5A
Leakage current: 0.5µA
Version: ESD
на замовлення 11331 шт:
термін постачання 21-30 дні (днів)
56+7.49 грн
72+5.41 грн
133+2.91 грн
500+2.00 грн
531+1.70 грн
1460+1.61 грн
3000+1.55 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
SZMMBZ6V8ALT1G ONSEMI mmbz5v6alt1-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 25W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Kind of package: reel; tape
Application: automotive industry
Peak pulse power dissipation: 25W
Tolerance: ±5%
Max. forward impulse current: 2.5A
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SZMMBZ6V8ALT3G ONSEMI mmbz5v6alt1-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
на замовлення 20000 шт:
термін постачання 21-30 дні (днів)
10000+3.20 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
MMBZ5V6ALT1G MMBZ5V6ALT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEDED6F98B88AA14&compId=MMBZ_ser.PDF?ci_sign=1f35ddf42140d92ef46c86e862bfcafdd39158da Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 3A; 24W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 5.6V
Max. forward impulse current: 3A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Kind of package: reel; tape
Tolerance: ±5%
Version: ESD
Leakage current: 5µA
на замовлення 3049 шт:
термін постачання 21-30 дні (днів)
42+9.99 грн
65+6.03 грн
86+4.50 грн
100+3.97 грн
463+1.96 грн
1273+1.86 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
SZMMBZ5V6ALT1G ONSEMI mmbz5v6alt1-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 3A; 25W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 5.6V
Max. forward impulse current: 3A
Peak pulse power dissipation: 25W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
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FDMS7672 ONSEMI FAIR-S-A0002363576-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 90A; 48W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 90A
Power dissipation: 48W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS004N08C ONSEMI fdms004n08c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; Idm: 637A; 125W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Pulsed drain current: 637A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
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2V7002KT1G 2n7002k-d.pdf
2V7002KT1G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
27+15.82 грн
46+8.43 грн
67+5.82 грн
100+5.08 грн
291+3.11 грн
799+2.94 грн
2000+2.82 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
FFSH2065B-F085 ffsh2065b-f085-d.pdf
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 22.3A; TO247-2; tube
Mounting: THT
Max. off-state voltage: 650V
Load current: 22.3A
Semiconductor structure: single diode
Application: automotive industry
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-2
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FFSH2065BDN-F085 ffsh2065bdn-f085-d.pdf
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; tube
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: common cathode; double
Application: automotive industry
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
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NLSX5011AMUTCG NLSX5011AMUTCG.pdf
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 1; 0.9÷4.5VDC; SMD; uDFN6; -55÷125°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 1
Supply voltage: 0.9...4.5V DC
Mounting: SMD
Case: uDFN6
Operating temperature: -55...125°C
Kind of package: reel; tape
Number of inputs: 1
Number of outputs: 1
Integrated circuit features: auto-direction sensing
Frequency: 100MHz
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NZ9F22VT5G NZ9Fxx.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 22V; SMD; reel,tape; SOD923; single diode; NZ9F
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD923
Semiconductor structure: single diode
Manufacturer series: NZ9F
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QRE1113GR qre1113-d.pdf
Виробник: ONSEMI
Category: Sensors and Transducers - Unclassified
Description: QRE1113GR
на замовлення 25000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1000+25.40 грн
Мінімальне замовлення: 1000
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SS18 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BC80F478116040C4&compId=SSxx.pdf?ci_sign=2bedf5667bd971c989f277b0833ac0b4e538a06e
SS18
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 80V; 1A; reel,tape; 1.1W
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 80V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 1.1W
на замовлення 3660 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+30.81 грн
18+22.35 грн
50+16.86 грн
66+13.84 грн
181+13.07 грн
500+12.60 грн
Мінімальне замовлення: 14
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BZX84C47LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
BZX84C47LT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
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BZX84C47LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
BZX84C47LT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
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SZBZX84C47LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
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SZBZX84C22ET1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 22V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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SZBZX84C22LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 22V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
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SS35 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BC8336EF0D4460C4&compId=SS32_SS39.pdf?ci_sign=8fa34ffef8d0a5973b77e4f15c0e2810f8a6bada
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 50V; 3A; reel,tape; 2.27W
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
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1SS351-TB-E
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC59; SMD; 5V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SC59
Mounting: SMD
Max. off-state voltage: 5V
Load current: 30mA
Semiconductor structure: double series
Max. forward voltage: 0.23V
Kind of package: reel; tape
Capacitance: 0.9pF
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BZX84C24LT1G description pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
BZX84C24LT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 24V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
на замовлення 3073 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
55+7.61 грн
95+4.10 грн
133+2.92 грн
146+2.66 грн
155+2.51 грн
673+1.35 грн
1500+1.29 грн
1850+1.28 грн
3000+1.23 грн
Мінімальне замовлення: 55
В кошику  од. на суму  грн.
SZBZX84C24LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 24V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
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BYV32-200G byv32-200-d.pdf
BYV32-200G
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 16A; tube; Ifsm: 100A; TO220AB; Ir: 600uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 16A
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AB
Max. forward voltage: 1.15V
Leakage current: 0.6mA
Reverse recovery time: 35ns
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GBPC2506 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
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GBPC2506W pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
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NTS4409NT1G NTS4409N.PDF
NTS4409NT1G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.75A; 0.28W; SC70,SOT323
Case: SC70; SOT323
Drain-source voltage: 25V
Drain current: 0.75A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 0.28W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.2nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
на замовлення 2110 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+33.31 грн
18+22.04 грн
50+14.92 грн
100+12.60 грн
102+8.89 грн
279+8.43 грн
1000+8.12 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
NLV14024BDR2G mc14024b-d.pdf
NLV14024BDR2G
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; asynchronous counter; TTL; SMD; SO14; 3÷18VDC; 600uA
Mounting: SMD
Operating temperature: -55...125°C
Case: SO14
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Quiescent current: 600µA
Application: automotive industry
Kind of package: reel; tape
Technology: TTL
Kind of integrated circuit: asynchronous counter
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NSQA6V8AW5T2G nsqa6v8aw5t2-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A
Type of diode: TVS array
Breakdown voltage: 6.4...7.1V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 5V
Kind of package: reel; tape
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SZNSQA6V8AW5T2G nsqa6v8aw5t2-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A
Type of diode: TVS array
Breakdown voltage: 6.4...7.1V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
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NC7S04M5X NC7S04.pdf
NC7S04M5X
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Mounting: SMD
Case: SOT23-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Number of inputs: 1
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
25+16.66 грн
46+8.43 грн
63+6.19 грн
100+5.39 грн
203+4.50 грн
500+4.06 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
NC7S04P5X NC7S04.pdf
NC7S04P5X
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC70-5; 2÷6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
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PCRU3060W
Виробник: ONSEMI
Category: Transistors - Unclassified
Description: PCRU3060W
на замовлення 24079 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+192.37 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FODM8071 pVersion=0046&contRep=ZT&docId=005056AB752F1EE786D5AC3177A38745&compId=FODM8071.pdf?ci_sign=294d9e42a972d807273d8786b500d390b74220c8
FODM8071
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 20Mbps; 40kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Transfer rate: 20Mbps
Case: Mini-flat 5pin
Turn-on time: 5.8ns
Turn-off time: 5.3µs
Slew rate: 40kV/μs
на замовлення 1445 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+272.31 грн
5+179.40 грн
8+129.91 грн
20+122.95 грн
200+121.40 грн
500+117.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NCP51400MNTXG NCP51400.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Operating voltage: 0.5...1.8/2.375...5.5V DC
Case: DFN10
Mounting: SMD
Operating temperature: -40...125°C
Output voltage: -0.1...3.5V
Output current: 3A
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
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NCV51400MNTXG NCP51400.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Operating voltage: 0.5...1.8/2.375...5.5V DC
Case: DFN10
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
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NCV51400MWTXG NCP51400.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Operating voltage: 0.5...1.8/2.375...5.5V DC
Case: DFN10
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
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S215FA ss29fa-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 150V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Kind of package: reel; tape
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MC74VHC4052DR2G MC74VHC4051-D.pdf
MC74VHC4052DR2G
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: VHC
Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC
Family: VHC
Kind of package: reel; tape
Operating temperature: -55...125°C
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MC74VHC4052DTR2G MC74VHC4051-D.pdf
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC
Family: VHC
Kind of package: reel; tape
Operating temperature: -55...125°C
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MC33179DR2G MC33179DG.PDF
MC33179DR2G
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 4; SO14; ±2÷18VDC,4÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 2V/μs
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Kind of package: reel; tape
на замовлення 201 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+100.76 грн
10+47.71 грн
23+39.98 грн
50+38.66 грн
63+37.81 грн
100+36.34 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SS33 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BC8336EF0D4460C4&compId=SS32_SS39.pdf?ci_sign=8fa34ffef8d0a5973b77e4f15c0e2810f8a6bada
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape; 2.27W
Mounting: SMD
Max. forward voltage: 0.5V
Max. off-state voltage: 30V
Case: SMC
Kind of package: reel; tape
Type of diode: Schottky rectifying
Power dissipation: 2.27W
Max. forward impulse current: 100A
Semiconductor structure: single diode
Load current: 3A
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ESD7461N2T5G
Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.3W; 16.5V; bidirectional; XDFN2; reel,tape; ESD
Version: ESD
Capacitance: 0.3pF
Max. off-state voltage: 16V
Semiconductor structure: bidirectional
Breakdown voltage: 16.5V
Leakage current: 0.1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.3W
Mounting: SMD
Case: XDFN2
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SMMSD301T1G mmsd301t1-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
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MMDL770T1G mmdl770t1-d.pdf
MMDL770T1G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Semiconductor structure: single diode
Capacitance: 1pF
Max. forward voltage: 1V
Kind of package: reel; tape
Power dissipation: 0.2W
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HCPL4503SDM hcpl2530m-d.pdf
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
на замовлення 26000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1000+41.06 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
NTD20P06LT4G pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A89E7BC6C8FF9E27&compId=NTD20P06-DTE.PDF?ci_sign=cd706c4a6fc93bc90b41bca030c4664c37cc4ead
NTD20P06LT4G
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15.5A
Power dissipation: 65W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2464 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+95.77 грн
10+61.78 грн
29+31.40 грн
80+29.62 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BSS138K bss138k-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.4nC
на замовлення 8800 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.33 грн
72+5.41 грн
120+3.23 грн
250+2.94 грн
406+2.23 грн
1115+2.11 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BSS138 bss138-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.7nC
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RGF1K RGF1M-D.PDF
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
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GF1K GF1M-D.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
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BCP55 bcp55-d.pdf
BCP55
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1.5A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
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RB521S30T5G rb521s30t1-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
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NSVRB521S30T5G rb521s30t1-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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MBR30H100MFST3G mbr30h100mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Mounting: SMD
Max. off-state voltage: 100V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
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MBR30H100CTG mbr30h100ct-d.pdf
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. forward impulse current: 250A
Kind of package: tube
Max. load current: 30A
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NRVB30H100MFST1G mbr30h100mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DFN5
Max. off-state voltage: 100V
Max. load current: 60A
Max. forward voltage: 0.9V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 0.3kA
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NRVB30H100MFST3G mbr30h100mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DFN5
Max. off-state voltage: 100V
Max. load current: 60A
Max. forward voltage: 0.9V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 0.3kA
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2SK3557-6-TB-E 2sk3557-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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2SK3557-7-TB-E 2sk3557-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 16mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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MMBZ6V8ALT1G pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEDED6F98B88AA14&compId=MMBZ_ser.PDF?ci_sign=1f35ddf42140d92ef46c86e862bfcafdd39158da
MMBZ6V8ALT1G
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 24W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Kind of package: reel; tape
Peak pulse power dissipation: 24W
Tolerance: ±5%
Max. forward impulse current: 2.5A
Leakage current: 0.5µA
Version: ESD
на замовлення 11331 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
56+7.49 грн
72+5.41 грн
133+2.91 грн
500+2.00 грн
531+1.70 грн
1460+1.61 грн
3000+1.55 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
SZMMBZ6V8ALT1G mmbz5v6alt1-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 25W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 4.5V
Kind of package: reel; tape
Application: automotive industry
Peak pulse power dissipation: 25W
Tolerance: ±5%
Max. forward impulse current: 2.5A
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SZMMBZ6V8ALT3G mmbz5v6alt1-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
на замовлення 20000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10000+3.20 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
MMBZ5V6ALT1G pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEDED6F98B88AA14&compId=MMBZ_ser.PDF?ci_sign=1f35ddf42140d92ef46c86e862bfcafdd39158da
MMBZ5V6ALT1G
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 3A; 24W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 5.6V
Max. forward impulse current: 3A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Kind of package: reel; tape
Tolerance: ±5%
Version: ESD
Leakage current: 5µA
на замовлення 3049 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
42+9.99 грн
65+6.03 грн
86+4.50 грн
100+3.97 грн
463+1.96 грн
1273+1.86 грн
Мінімальне замовлення: 42
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SZMMBZ5V6ALT1G mmbz5v6alt1-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 3A; 25W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 5.6V
Max. forward impulse current: 3A
Peak pulse power dissipation: 25W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
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FDMS7672 FAIR-S-A0002363576-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 90A; 48W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 90A
Power dissipation: 48W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS004N08C fdms004n08c-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; Idm: 637A; 125W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Pulsed drain current: 637A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
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