Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1597) > Сторінка 24 з 27
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PJSOT24C-05-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 29.4V; 12A; 0.35kW; unidirectional; SOT23; Ch: 2 Type of diode: TVS Breakdown voltage: 29.4V Max. forward impulse current: 12A Peak pulse power dissipation: 0.35kW Semiconductor structure: unidirectional Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Leakage current: 1µA Number of channels: 2 Capacitance: 0.15nF Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
 |
PJT138K-AU_R1_000A1 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; Idm: 1.2A; 236mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.36A Pulsed drain current: 1.2A Power dissipation: 0.236W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Gate charge: 1nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||
 |
PJT7002H_R1_00001 | PanJit Semiconductor |
 Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; 30V; 300mA; SOT363 Case: SOT363 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain current: 0.3A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N/P-MOSFET Gate-source voltage: 10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
PJT7002KDW_R1_00501 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30V; 300mA; SOT363 Case: SOT363 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain current: 0.3A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N/P-MOSFET Gate-source voltage: 10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
PJT7600_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW Mounting: SMD Case: SOT363 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 1A/-700mA Gate charge: 1.6/2.2nC On-state resistance: 400/600mΩ Power dissipation: 0.35W Gate-source voltage: ±8V |
на замовлення 2685 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||
|
|
PJT7603_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 50/-60V Mounting: SMD Case: SOT363 Kind of package: reel; tape Kind of transistor: complementary pair Kind of channel: enhancement Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 50/-60V Drain current: -250/400mA Gate charge: 0.95/1.1nC On-state resistance: 2.5/6Ω Power dissipation: 0.35W Gate-source voltage: ±20V |
на замовлення 2750 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||
|
|
PJT7800_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363 Mounting: SMD Pulsed drain current: 4A Power dissipation: 0.35W Gate charge: 1.6nC Polarisation: unipolar Drain current: 1A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET x2 Gate-source voltage: ±8V Kind of package: reel; tape Case: SOT363 On-state resistance: 0.4Ω |
на замовлення 5968 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||
|
|
PJT7801_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW Mounting: SMD Case: SOT363 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -2.8A Drain current: -0.7A Gate charge: 2.2nC On-state resistance: 0.6Ω Power dissipation: 0.35W Gate-source voltage: ±8V |
на замовлення 2845 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||
|
|
PJT7808_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363 Case: SOT363 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain current: -250mA Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET x2 Gate-source voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PJT7812_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -60V Drain current: -250mA Case: SOT363 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
|
PJT7838_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.4A Pulsed drain current: 1.2A Power dissipation: 0.35W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Gate charge: 0.95nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 7647 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||
| PJUSB05-4_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6.37V; 0.15kW; unidirectional; SOT23-6L; Ch: 5 Type of diode: TVS Breakdown voltage: 6.37V Semiconductor structure: unidirectional Mounting: SMD Case: SOT23-6L Max. off-state voltage: 5V Leakage current: 1µA Number of channels: 5 Capacitance: 8.5pF Peak pulse power dissipation: 0.15kW |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| PJUSB208_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 85V; unidirectional; SOT23-6L; Ch: 4 Type of diode: TVS Breakdown voltage: 85V Semiconductor structure: unidirectional Mounting: SMD Case: SOT23-6L Max. off-state voltage: 70V Leakage current: 1µA Number of channels: 4 Capacitance: 1pF |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| PJUSB208_S1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 85V; unidirectional; SOT23-6L; Ch: 4 Type of diode: TVS Breakdown voltage: 85V Semiconductor structure: unidirectional Mounting: SMD Case: SOT23-6L Max. off-state voltage: 70V Leakage current: 1µA Number of channels: 4 Capacitance: 1pF |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| PJW3P06A-AU_R2_007A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3A Case: SOT223 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJW3P06A_R2_00701 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3A Case: SOT223 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
 |
PJW4N06A-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.2A Pulsed drain current: 8A Power dissipation: 2.6W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 5.1nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 42500 шт В кошику од. на суму грн. | ||||||||||||||
|
|
PJW4N06A_R2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4A Pulsed drain current: 8A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 5.1nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 42500 шт В кошику од. на суму грн. | ||||||||||||||
|
|
PJW4P06A-AU_R2_007A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -4A Case: SOT223 Gate-source voltage: ±20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -16A Application: automotive industry Gate charge: 10nC On-state resistance: 0.13Ω Power dissipation: 3.1W |
на замовлення 5624 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||
|
|
PJW4P06A_R2_00701 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -4A Case: SOT223 Gate-source voltage: ±20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -16A Gate charge: 10nC On-state resistance: 0.13Ω Power dissipation: 3.1W |
на замовлення 55 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||
|
|
PJW5P06A-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5A; Idm: -20A; 1W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5A Case: SOT223 Gate-source voltage: ±20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -20A Application: automotive industry Gate charge: 17nC On-state resistance: 85mΩ Power dissipation: 1W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PJW5P06A_R2_00701 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5A; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5A Case: SOT223 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
 |
PJW7N06A-AU_R2_007A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223 Case: SOT223 Mounting: SMD Polarisation: unipolar Drain current: 6.6A Kind of channel: enhancement Drain-source voltage: 60V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: 20V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
PJW7N06A_R2_00701 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223 Case: SOT223 Mounting: SMD Polarisation: unipolar Drain current: 6.6A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: 20V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
 |
PJX138K_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.35A Pulsed drain current: 1.2A Power dissipation: 223mW Case: SOT563 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Gate charge: 1nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3720 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||
|
|
PJX8603_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 50/-60V Drain current: 360/-200mA Power dissipation: 0.3W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 2.5/7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 0.95/1.1nC |
на замовлення 1647 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||
| PJX8812_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563 Polarisation: unipolar Kind of channel: enhancement Mounting: SMD Case: SOT563 Type of transistor: N-MOSFET x2 Drain current: 0.3A Gate-source voltage: 10V Drain-source voltage: 30V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJX8828-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563 Kind of channel: enhancement Mounting: SMD Case: SOT563 Type of transistor: N-MOSFET x2 Drain current: 0.3A Gate-source voltage: 10V Drain-source voltage: 30V Polarisation: unipolar Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJX8828_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563 Kind of channel: enhancement Mounting: SMD Case: SOT563 Type of transistor: N-MOSFET x2 Drain current: 0.3A Gate-source voltage: 10V Drain-source voltage: 30V Polarisation: unipolar Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJX8839_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Gate-source voltage: 20V Drain-source voltage: 60V Drain current: 68A Polarisation: unipolar Case: DFN5060-8 Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PM810_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 170A; M8 Case: M8 Type of bridge rectifier: single-phase Max. forward voltage: 1.05V Load current: 8A Max. forward impulse current: 170A Max. off-state voltage: 1kV Electrical mounting: SMT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PMS210_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 70A; M4 Case: M4 Max. forward voltage: 1.05V Max. off-state voltage: 1kV Electrical mounting: SMT Load current: 2A Type of bridge rectifier: single-phase Max. forward impulse current: 70A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PMS310_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 110A; M4 Case: M4 Type of bridge rectifier: single-phase Electrical mounting: SMT Max. forward voltage: 1.05V Load current: 3A Max. forward impulse current: 110A Max. off-state voltage: 1kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
 |
PMS410_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M4 Kind of package: reel; tape Features of semiconductor devices: glass passivated Case: M4 Type of bridge rectifier: single-phase Electrical mounting: SMT Max. forward voltage: 1.05V Load current: 4A Max. forward impulse current: 120A Max. off-state voltage: 1kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PMSM608_R2_00301 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 150A; M6 Max. off-state voltage: 0.8kV Electrical mounting: SMT Load current: 6A Case: M6 Type of bridge rectifier: single-phase Max. forward impulse current: 150A Max. forward voltage: 1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PMSM810_R2_00301 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; M6 Case: M6 Type of bridge rectifier: single-phase Electrical mounting: SMT Max. forward voltage: 1V Load current: 8A Max. forward impulse current: 200A Max. off-state voltage: 1kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PS1405-D32_R1_00301 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6V; 5A; bidirectional; DFN2; Ch: 1 Mounting: SMD Breakdown voltage: 6V Max. forward impulse current: 5A Max. off-state voltage: 5V Semiconductor structure: bidirectional Leakage current: 0.5µA Case: DFN2 Capacitance: 0.42pF Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||
| PS140M-D32_R1_00301 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 25.5V; 10A; bidirectional; DFN2; Ch: 1 Mounting: SMD Breakdown voltage: 25.5V Max. forward impulse current: 10A Max. off-state voltage: 24V Semiconductor structure: bidirectional Leakage current: 0.5µA Case: DFN2 Capacitance: 0.5pF Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||
| PS161M-D62_R1_00301 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; DFN1006-2 Case: DFN1006-2 Mounting: SMD Type of diode: TVS |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||
| PS2705-D63_R1_00301 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6V; 5A; bidirectional; Ch: 2 Type of diode: TVS Breakdown voltage: 6V Max. forward impulse current: 5A Semiconductor structure: bidirectional Mounting: SMD Max. off-state voltage: 5V Leakage current: 0.5µA Number of channels: 2 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||
| PS5915-S26_S1_00301 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 5.5V; 5A; unidirectional; SOT23-6L; Ch: 5 Type of diode: TVS Breakdown voltage: 5.5V Max. forward impulse current: 5A Semiconductor structure: unidirectional Mounting: SMD Case: SOT23-6L Max. off-state voltage: 5V Leakage current: 1µA Number of channels: 5 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| PSMB033N10NS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2400 шт В кошику од. на суму грн. | |||||||||||||||
| PSMN015N10NS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 398A Pulsed drain current: 1592A Power dissipation: 250W Case: TOLL Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 128nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMN028N10NS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 240A Pulsed drain current: 960A Power dissipation: 167W Case: TOLL Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMP033N10NS2_T0_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
 |
PSMP055N08NS1_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220AB Case: TO220AB Mounting: THT Pulsed drain current: 360A Power dissipation: 136W Gate charge: 65.8nC Polarisation: unipolar Drain current: 111A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube On-state resistance: 7mΩ |
на замовлення 79 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||
 |
PSMQC040N10NS2_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 122A Pulsed drain current: 488A Power dissipation: 125W Case: DFN5060-8 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
| PSMQC042N10LS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 9000 шт В кошику од. на суму грн. | |||||||||||||||
| PSMQC060N06LS1-AU_R2_006A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMQC060N06LS1_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMQC120N06LS1-AU_R2_006A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 39A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMQC120N06LS1_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 39A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMQC280N10LS2-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 21A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 21A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PSMQE070N08LS2_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 63.8A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 63.8A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | |||||||||||||||
| PTGH7565S1_T0_00201 | PanJit Semiconductor |
Category: THT IGBT transistors Description: Transistor: IGBT; Trench FS IGBT; 650V; 80A; 183W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 183W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 108nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: Trench FS IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PZ1AH12B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 12V; SMD; SOD123HE; reel,tape; single diode Semiconductor structure: single diode Power dissipation: 1W Mounting: SMD Kind of package: reel; tape Type of diode: Zener Tolerance: ±5% Zener voltage: 12V Application: automotive industry Case: SOD123HE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PZ1AH12B_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 12V; SMD; SOD123HE; reel,tape; single diode Semiconductor structure: single diode Power dissipation: 1W Mounting: SMD Kind of package: reel; tape Type of diode: Zener Tolerance: ±5% Zener voltage: 12V Case: SOD123HE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PZ1AH16B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 16V; SMD; SOD123HE; reel,tape; single diode Semiconductor structure: single diode Mounting: SMD Case: SOD123HE Type of diode: Zener Power dissipation: 1W Tolerance: ±5% Zener voltage: 16V Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PZ1AH16B_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 16V; SMD; SOD123HE; reel,tape; single diode Semiconductor structure: single diode Mounting: SMD Case: SOD123HE Type of diode: Zener Power dissipation: 1W Tolerance: ±5% Zener voltage: 16V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PZ1AH18B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 18V; SMD; SOD123HE; single diode; reel,tape Tolerance: ±5% Mounting: SMD Power dissipation: 1W Application: automotive industry Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123HE Zener voltage: 18V Type of diode: Zener |
товару немає в наявності |
В кошику од. на суму грн. |
| PJSOT24C-05-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 12A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 29.4V
Max. forward impulse current: 12A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 2
Capacitance: 0.15nF
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 12A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 29.4V
Max. forward impulse current: 12A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 2
Capacitance: 0.15nF
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PJT138K-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; Idm: 1.2A; 236mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.36A
Pulsed drain current: 1.2A
Power dissipation: 0.236W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; Idm: 1.2A; 236mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.36A
Pulsed drain current: 1.2A
Power dissipation: 0.236W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 18.79 грн |
| 40+ | 10.55 грн |
| 100+ | 6.34 грн |
| 500+ | 4.60 грн |
| 1000+ | 4.30 грн |
| PJT7002H_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 300mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N/P-MOSFET
Gate-source voltage: 10V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 300mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N/P-MOSFET
Gate-source voltage: 10V
товару немає в наявності
В кошику
од. на суму грн.
| PJT7002KDW_R1_00501 |
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 300mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N/P-MOSFET
Gate-source voltage: 10V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 300mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N/P-MOSFET
Gate-source voltage: 10V
товару немає в наявності
В кошику
од. на суму грн.
| PJT7600_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1A/-700mA
Gate charge: 1.6/2.2nC
On-state resistance: 400/600mΩ
Power dissipation: 0.35W
Gate-source voltage: ±8V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1A/-700mA
Gate charge: 1.6/2.2nC
On-state resistance: 400/600mΩ
Power dissipation: 0.35W
Gate-source voltage: ±8V
на замовлення 2685 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 32.22 грн |
| 23+ | 18.45 грн |
| 100+ | 11.63 грн |
| 500+ | 8.81 грн |
| 1000+ | 7.81 грн |
| PJT7603_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 50/-60V
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: -250/400mA
Gate charge: 0.95/1.1nC
On-state resistance: 2.5/6Ω
Power dissipation: 0.35W
Gate-source voltage: ±20V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 50/-60V
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: -250/400mA
Gate charge: 0.95/1.1nC
On-state resistance: 2.5/6Ω
Power dissipation: 0.35W
Gate-source voltage: ±20V
на замовлення 2750 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 18.79 грн |
| 35+ | 11.88 грн |
| 100+ | 6.55 грн |
| 500+ | 5.02 грн |
| 1000+ | 4.67 грн |
| PJT7800_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Mounting: SMD
Pulsed drain current: 4A
Power dissipation: 0.35W
Gate charge: 1.6nC
Polarisation: unipolar
Drain current: 1A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SOT363
On-state resistance: 0.4Ω
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Mounting: SMD
Pulsed drain current: 4A
Power dissipation: 0.35W
Gate charge: 1.6nC
Polarisation: unipolar
Drain current: 1A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SOT363
On-state resistance: 0.4Ω
на замовлення 5968 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.84 грн |
| 60+ | 6.98 грн |
| 100+ | 6.40 грн |
| 250+ | 6.15 грн |
| 500+ | 5.82 грн |
| 1000+ | 5.32 грн |
| 3000+ | 5.24 грн |
| PJT7801_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -2.8A
Drain current: -0.7A
Gate charge: 2.2nC
On-state resistance: 0.6Ω
Power dissipation: 0.35W
Gate-source voltage: ±8V
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -2.8A
Drain current: -0.7A
Gate charge: 2.2nC
On-state resistance: 0.6Ω
Power dissipation: 0.35W
Gate-source voltage: ±8V
на замовлення 2845 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 35.80 грн |
| 26+ | 16.04 грн |
| 58+ | 7.23 грн |
| 100+ | 6.48 грн |
| 250+ | 5.98 грн |
| 500+ | 5.48 грн |
| 1000+ | 5.15 грн |
| PJT7808_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -250mA
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET x2
Gate-source voltage: 20V
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -250mA
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET x2
Gate-source voltage: 20V
товару немає в наявності
В кошику
од. на суму грн.
| PJT7812_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -250mA
Case: SOT363
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -250mA
Case: SOT363
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJT7838_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.4A
Pulsed drain current: 1.2A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.4A
Pulsed drain current: 1.2A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 7647 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.74 грн |
| 53+ | 7.89 грн |
| 100+ | 7.31 грн |
| 500+ | 6.98 грн |
| 1000+ | 6.56 грн |
| 3000+ | 5.90 грн |
| PJUSB05-4_R1_00001 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6.37V; 0.15kW; unidirectional; SOT23-6L; Ch: 5
Type of diode: TVS
Breakdown voltage: 6.37V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 5
Capacitance: 8.5pF
Peak pulse power dissipation: 0.15kW
Category: Protection diodes - arrays
Description: Diode: TVS; 6.37V; 0.15kW; unidirectional; SOT23-6L; Ch: 5
Type of diode: TVS
Breakdown voltage: 6.37V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 5
Capacitance: 8.5pF
Peak pulse power dissipation: 0.15kW
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PJUSB208_R1_00001 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 85V; unidirectional; SOT23-6L; Ch: 4
Type of diode: TVS
Breakdown voltage: 85V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 70V
Leakage current: 1µA
Number of channels: 4
Capacitance: 1pF
Category: Protection diodes - arrays
Description: Diode: TVS; 85V; unidirectional; SOT23-6L; Ch: 4
Type of diode: TVS
Breakdown voltage: 85V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 70V
Leakage current: 1µA
Number of channels: 4
Capacitance: 1pF
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PJUSB208_S1_00001 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 85V; unidirectional; SOT23-6L; Ch: 4
Type of diode: TVS
Breakdown voltage: 85V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 70V
Leakage current: 1µA
Number of channels: 4
Capacitance: 1pF
Category: Protection diodes - arrays
Description: Diode: TVS; 85V; unidirectional; SOT23-6L; Ch: 4
Type of diode: TVS
Breakdown voltage: 85V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 70V
Leakage current: 1µA
Number of channels: 4
Capacitance: 1pF
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PJW3P06A-AU_R2_007A1 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJW3P06A_R2_00701 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJW4N06A-AU_R2_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 42500 шт
В кошику
од. на суму грн.
| PJW4N06A_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 42500 шт
В кошику
од. на суму грн.
| PJW4P06A-AU_R2_007A1 |
|
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -16A
Application: automotive industry
Gate charge: 10nC
On-state resistance: 0.13Ω
Power dissipation: 3.1W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -16A
Application: automotive industry
Gate charge: 10nC
On-state resistance: 0.13Ω
Power dissipation: 3.1W
на замовлення 5624 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 46.53 грн |
| 15+ | 28.50 грн |
| 100+ | 18.20 грн |
| 250+ | 15.29 грн |
| 500+ | 13.63 грн |
| 1000+ | 12.63 грн |
| PJW4P06A_R2_00701 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -16A
Gate charge: 10nC
On-state resistance: 0.13Ω
Power dissipation: 3.1W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -16A
Gate charge: 10nC
On-state resistance: 0.13Ω
Power dissipation: 3.1W
на замовлення 55 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 46.53 грн |
| 15+ | 29.00 грн |
| PJW5P06A-AU_R2_000A1 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5A; Idm: -20A; 1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
Application: automotive industry
Gate charge: 17nC
On-state resistance: 85mΩ
Power dissipation: 1W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5A; Idm: -20A; 1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
Application: automotive industry
Gate charge: 17nC
On-state resistance: 85mΩ
Power dissipation: 1W
товару немає в наявності
В кошику
од. на суму грн.
| PJW5P06A_R2_00701 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJW7N06A-AU_R2_007A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Case: SOT223
Mounting: SMD
Polarisation: unipolar
Drain current: 6.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Case: SOT223
Mounting: SMD
Polarisation: unipolar
Drain current: 6.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| PJW7N06A_R2_00701 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Case: SOT223
Mounting: SMD
Polarisation: unipolar
Drain current: 6.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Case: SOT223
Mounting: SMD
Polarisation: unipolar
Drain current: 6.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| PJX138K_R1_00001 |
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3720 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.11 грн |
| 48+ | 8.73 грн |
| 83+ | 5.05 грн |
| 100+ | 4.54 грн |
| 250+ | 4.31 грн |
| 500+ | 4.29 грн |
| PJX8603_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.95/1.1nC
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.95/1.1nC
на замовлення 1647 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.37 грн |
| 33+ | 12.71 грн |
| 100+ | 8.89 грн |
| 500+ | 7.15 грн |
| 1000+ | 6.56 грн |
| PJX8812_R1_00001 |
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| PJX8828-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| PJX8828_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Polarisation: unipolar
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| PJX8839_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate-source voltage: 20V
Drain-source voltage: 60V
Drain current: 68A
Polarisation: unipolar
Case: DFN5060-8
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate-source voltage: 20V
Drain-source voltage: 60V
Drain current: 68A
Polarisation: unipolar
Case: DFN5060-8
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PM810_R2_00601 |
|
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 170A; M8
Case: M8
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 8A
Max. forward impulse current: 170A
Max. off-state voltage: 1kV
Electrical mounting: SMT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 170A; M8
Case: M8
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 8A
Max. forward impulse current: 170A
Max. off-state voltage: 1kV
Electrical mounting: SMT
товару немає в наявності
В кошику
од. на суму грн.
| PMS210_R2_00601 |
|
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 70A; M4
Case: M4
Max. forward voltage: 1.05V
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 2A
Type of bridge rectifier: single-phase
Max. forward impulse current: 70A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 70A; M4
Case: M4
Max. forward voltage: 1.05V
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 2A
Type of bridge rectifier: single-phase
Max. forward impulse current: 70A
товару немає в наявності
В кошику
од. на суму грн.
| PMS310_R2_00601 |
|
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 110A; M4
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 3A
Max. forward impulse current: 110A
Max. off-state voltage: 1kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 110A; M4
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 3A
Max. forward impulse current: 110A
Max. off-state voltage: 1kV
товару немає в наявності
В кошику
од. на суму грн.
| PMS410_R2_00601 |
|
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M4
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 4A
Max. forward impulse current: 120A
Max. off-state voltage: 1kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M4
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 4A
Max. forward impulse current: 120A
Max. off-state voltage: 1kV
товару немає в наявності
В кошику
од. на суму грн.
| PMSM608_R2_00301 |
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 150A; M6
Max. off-state voltage: 0.8kV
Electrical mounting: SMT
Load current: 6A
Case: M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 150A
Max. forward voltage: 1V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 150A; M6
Max. off-state voltage: 0.8kV
Electrical mounting: SMT
Load current: 6A
Case: M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 150A
Max. forward voltage: 1V
товару немає в наявності
В кошику
од. на суму грн.
| PMSM810_R2_00301 |
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; M6
Case: M6
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1V
Load current: 8A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; M6
Case: M6
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1V
Load current: 8A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
товару немає в наявності
В кошику
од. на суму грн.
| PS1405-D32_R1_00301 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 5A; bidirectional; DFN2; Ch: 1
Mounting: SMD
Breakdown voltage: 6V
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Leakage current: 0.5µA
Case: DFN2
Capacitance: 0.42pF
Type of diode: TVS
Number of channels: 1
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 5A; bidirectional; DFN2; Ch: 1
Mounting: SMD
Breakdown voltage: 6V
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Leakage current: 0.5µA
Case: DFN2
Capacitance: 0.42pF
Type of diode: TVS
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| PS140M-D32_R1_00301 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 25.5V; 10A; bidirectional; DFN2; Ch: 1
Mounting: SMD
Breakdown voltage: 25.5V
Max. forward impulse current: 10A
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 0.5µA
Case: DFN2
Capacitance: 0.5pF
Type of diode: TVS
Number of channels: 1
Category: Protection diodes - arrays
Description: Diode: TVS; 25.5V; 10A; bidirectional; DFN2; Ch: 1
Mounting: SMD
Breakdown voltage: 25.5V
Max. forward impulse current: 10A
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 0.5µA
Case: DFN2
Capacitance: 0.5pF
Type of diode: TVS
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| PS161M-D62_R1_00301 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1006-2
Case: DFN1006-2
Mounting: SMD
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1006-2
Case: DFN1006-2
Mounting: SMD
Type of diode: TVS
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| PS2705-D63_R1_00301 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 5A; bidirectional; Ch: 2
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: bidirectional
Mounting: SMD
Max. off-state voltage: 5V
Leakage current: 0.5µA
Number of channels: 2
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 5A; bidirectional; Ch: 2
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: bidirectional
Mounting: SMD
Max. off-state voltage: 5V
Leakage current: 0.5µA
Number of channels: 2
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| PS5915-S26_S1_00301 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; unidirectional; SOT23-6L; Ch: 5
Type of diode: TVS
Breakdown voltage: 5.5V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 5
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; unidirectional; SOT23-6L; Ch: 5
Type of diode: TVS
Breakdown voltage: 5.5V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 5
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PSMB033N10NS2_R2_00201 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2400 шт
В кошику
од. на суму грн.
| PSMN015N10NS2_R2_00201 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PSMN028N10NS2_R2_00201 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 240A
Pulsed drain current: 960A
Power dissipation: 167W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 240A
Pulsed drain current: 960A
Power dissipation: 167W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PSMP033N10NS2_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PSMP055N08NS1_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220AB
Case: TO220AB
Mounting: THT
Pulsed drain current: 360A
Power dissipation: 136W
Gate charge: 65.8nC
Polarisation: unipolar
Drain current: 111A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
On-state resistance: 7mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220AB
Case: TO220AB
Mounting: THT
Pulsed drain current: 360A
Power dissipation: 136W
Gate charge: 65.8nC
Polarisation: unipolar
Drain current: 111A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
On-state resistance: 7mΩ
на замовлення 79 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 134.23 грн |
| 10+ | 73.12 грн |
| 50+ | 66.48 грн |
| PSMQC040N10NS2_R2_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PSMQC042N10LS2_R2_00201 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 9000 шт
В кошику
од. на суму грн.
| PSMQC060N06LS1-AU_R2_006A1 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PSMQC060N06LS1_R2_00201 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PSMQC120N06LS1-AU_R2_006A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PSMQC120N06LS1_R2_00201 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PSMQC280N10LS2-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PSMQE070N08LS2_R2_00601 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 63.8A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 63.8A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 63.8A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 63.8A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| PTGH7565S1_T0_00201 |
Виробник: PanJit Semiconductor
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench FS IGBT; 650V; 80A; 183W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 183W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Trench FS IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench FS IGBT; 650V; 80A; 183W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 183W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Trench FS IGBT
товару немає в наявності
В кошику
од. на суму грн.
| PZ1AH12B-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; SMD; SOD123HE; reel,tape; single diode
Semiconductor structure: single diode
Power dissipation: 1W
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Tolerance: ±5%
Zener voltage: 12V
Application: automotive industry
Case: SOD123HE
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; SMD; SOD123HE; reel,tape; single diode
Semiconductor structure: single diode
Power dissipation: 1W
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Tolerance: ±5%
Zener voltage: 12V
Application: automotive industry
Case: SOD123HE
товару немає в наявності
В кошику
од. на суму грн.
| PZ1AH12B_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; SMD; SOD123HE; reel,tape; single diode
Semiconductor structure: single diode
Power dissipation: 1W
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Tolerance: ±5%
Zener voltage: 12V
Case: SOD123HE
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; SMD; SOD123HE; reel,tape; single diode
Semiconductor structure: single diode
Power dissipation: 1W
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Tolerance: ±5%
Zener voltage: 12V
Case: SOD123HE
товару немає в наявності
В кошику
од. на суму грн.
| PZ1AH16B-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; SMD; SOD123HE; reel,tape; single diode
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123HE
Type of diode: Zener
Power dissipation: 1W
Tolerance: ±5%
Zener voltage: 16V
Application: automotive industry
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; SMD; SOD123HE; reel,tape; single diode
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123HE
Type of diode: Zener
Power dissipation: 1W
Tolerance: ±5%
Zener voltage: 16V
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| PZ1AH16B_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; SMD; SOD123HE; reel,tape; single diode
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123HE
Type of diode: Zener
Power dissipation: 1W
Tolerance: ±5%
Zener voltage: 16V
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; SMD; SOD123HE; reel,tape; single diode
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123HE
Type of diode: Zener
Power dissipation: 1W
Tolerance: ±5%
Zener voltage: 16V
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| PZ1AH18B-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; SOD123HE; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Power dissipation: 1W
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Zener voltage: 18V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; SOD123HE; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Power dissipation: 1W
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Zener voltage: 18V
Type of diode: Zener
товару немає в наявності
В кошику
од. на суму грн.