Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1830) > Сторінка 24 з 31
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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| PJB120N04V-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 166A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 166A Case: TO220AB Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | |||||||||||||||||||
| PJB140P04E7-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 22A; DFN3333-8 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 22A Drain-source voltage: 100V Gate-source voltage: 20V Application: automotive industry Kind of package: reel; tape Case: DFN3333-8 |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | |||||||||||||||||||
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PJC7400_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323 Mounting: SMD Case: SOT323 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Pulsed drain current: 7.6A Drain current: 1.9A Gate charge: 4.8nC On-state resistance: 0.11Ω Power dissipation: 0.35W Gate-source voltage: ±12V |
на замовлення 5345 шт: термін постачання 14-30 дні (днів) |
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PJC7401_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±12V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2075 шт: термін постачання 14-30 дні (днів) |
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PJC7404_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323 Mounting: SMD Pulsed drain current: 4A Power dissipation: 0.35W Gate charge: 1.6nC Polarisation: unipolar Drain current: 1A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: SOT323 On-state resistance: 0.4Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| PJC7406_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 60A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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PJC7407_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.3A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±12V On-state resistance: 0.2Ω Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: -5.2A Gate charge: 5.4nC |
на замовлення 6105 шт: термін постачання 14-30 дні (днів) |
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| PJC7409_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8 Mounting: SMD Polarisation: unipolar Drain current: 39A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: 20V Kind of package: reel; tape Case: DFN5060-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PJC7410_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 38A; DFN5060-8 Mounting: SMD Polarisation: unipolar Drain current: 38A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: 20V Kind of package: reel; tape Case: DFN5060-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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PJC7428_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323 Mounting: SMD Pulsed drain current: 0.6A Power dissipation: 0.35W Gate charge: 0.9nC Polarisation: unipolar Drain current: 0.3A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±10V Kind of package: reel; tape Case: SOT323 On-state resistance: 4Ω |
на замовлення 2750 шт: термін постачання 14-30 дні (днів) |
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| PJC7438-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 63.8A; DFN3333-8 Case: DFN3333-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate-source voltage: 20V Drain current: 63.8A Drain-source voltage: 80V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PJC7438_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 55A; DFN3333-8 Case: DFN3333-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate-source voltage: 20V Drain current: 55A Drain-source voltage: 80V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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PJC7439-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW Mounting: SMD Case: SOT323 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Pulsed drain current: -1A Drain current: -0.25A Gate charge: 1.1nC On-state resistance: 13Ω Power dissipation: 0.35W Gate-source voltage: ±20V Application: automotive industry |
на замовлення 2875 шт: термін постачання 14-30 дні (днів) |
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PJC7476_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW Mounting: SMD Pulsed drain current: 0.8A Power dissipation: 0.35W Gate charge: 1.8nC Polarisation: unipolar Drain current: 0.3A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT323 On-state resistance: 9Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| PJD100N06SA-AU_L2_006A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 50.4A; DFN3333-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 50.4A Case: DFN3333-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | |||||||||||||||||||
| PJD10P10A_L2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; TO252AA Case: TO252AA Mounting: SMD Polarisation: unipolar Drain current: 10A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: 20V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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PJD11N06A-AU_L2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 11A; TO252AA Case: TO252AA Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Drain-source voltage: 60V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: 20V Polarisation: unipolar Drain current: 11A |
на замовлення 2990 шт: термін постачання 14-30 дні (днів) |
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| PJD11N06A_L2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 11A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PJD13N10A_L2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 13A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 9000 шт В кошику од. на суму грн. | |||||||||||||||||||
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PJD15P06A-AU_L2_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 25W; TO252AA Case: TO252AA Kind of package: reel; tape Pulsed drain current: -60A Power dissipation: 25W Gate charge: 17nC Polarisation: unipolar Drain current: -15A Kind of channel: enhancement Drain-source voltage: -60V Application: automotive industry Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 85mΩ Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| PJD15P06A_L2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15A; TO252AA Case: TO252AA Kind of package: reel; tape Polarisation: unipolar Drain current: 15A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: 20V Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PJD16N06A-AU_L2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 15A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 15A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PJD16N06A_L2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 15A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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PJD16P06A_L2_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -16A; Idm: -64A; 2W; TO252AA Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -16A Power dissipation: 2W Case: TO252AA Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: -64A Gate charge: 22nC |
на замовлення 10428 шт: термін постачання 14-30 дні (днів) |
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PJD18N20_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA Case: TO252AA Mounting: SMD On-state resistance: 0.16Ω Drain current: 11A Gate-source voltage: ±20V Power dissipation: 83W Pulsed drain current: 72A Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 24nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| PJD25N06A-AU_L2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 25A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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PJD25N06A_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Pulsed drain current: 100A Power dissipation: 40W Case: TO252AA Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 979 шт: термін постачання 14-30 дні (днів) |
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| PJD30N04S-AU_L2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 43A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 43A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PJD35N06A_L2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 35A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 35A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PJD40N06A-AU_L2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 40A Case: TO252AA Mounting: SMD Kind of channel: enhancement Application: automotive industry Gate-source voltage: 20V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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PJD40N06A_L2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 40A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape |
на замовлення 8914 шт: термін постачання 14-30 дні (днів) |
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| PJD40P03E-AU_L2_006A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -33A; Idm: -94A; 17W; TO252AA Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -33A Pulsed drain current: -94A Power dissipation: 17W Case: TO252AA Gate-source voltage: ±25V On-state resistance: 18.8mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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PJD45N06A_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA Case: TO252AA Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 39nC On-state resistance: 15mΩ Drain current: 45A Gate-source voltage: ±20V Power dissipation: 63W Drain-source voltage: 60V Pulsed drain current: 180A Kind of channel: enhancement |
на замовлення 154 шт: термін постачання 14-30 дні (днів) |
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| PJD45P03E-AU_L2_006A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -42A; Idm: -128A; 21W; TO252AA Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -42A Power dissipation: 21W Case: TO252AA Gate-source voltage: ±25V On-state resistance: 15mΩ Mounting: SMD Gate charge: 32nC Kind of channel: enhancement Pulsed drain current: -128A Application: automotive industry Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PJD50N04-AU_L2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 50A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PJD50N04V-AU_L2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 80A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 80A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PJD60N04S-AU_L2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 140A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 140A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PJD60N04V-AU_L2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 154A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 154A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PJD60N06SA-AU_L2_006A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 66A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 66A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PJD70N10SA-AU_L2_006A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 88A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 88A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PJD70P03E-AU_L2_006A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -77A; Idm: -225A; 40W; TO252AA Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -77A Pulsed drain current: -225A Power dissipation: 40W Case: TO252AA Gate-source voltage: ±25V On-state resistance: 8.4mΩ Mounting: SMD Gate charge: 54nC Kind of package: reel Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PJD80N03_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 80A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PJD80N06SA-AU_L2_006A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 94A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 94A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PJD90P03E-AU_L2_006A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -88A; Idm: -219A; 40W; TO252AA Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -88A Pulsed drain current: -219A Power dissipation: 40W Case: TO252AA Gate-source voltage: ±25V On-state resistance: 6.4mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PJD9P06A-AU_L2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 7A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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PJE138K_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 350mA; Idm: 1.2A; 223mW; SOT523 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.35A Pulsed drain current: 1.2A Power dissipation: 223mW Case: SOT523 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Gate charge: 1nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 514 шт: термін постачання 14-30 дні (днів) |
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| PJE28VM2FN2_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; DFN1006-2; Ch: 1 Type of diode: TVS Case: DFN1006-2 Mounting: SMD Max. off-state voltage: 28V Semiconductor structure: unidirectional Capacitance: 25pF Leakage current: 0.5µA Max. forward impulse current: 3A Number of channels: 1 Breakdown voltage: 29V Peak pulse power dissipation: 0.165kW |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||||||
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PJE28VM2TS_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; SOD523; Ch: 1 Type of diode: TVS Case: SOD523 Mounting: SMD Max. off-state voltage: 28V Semiconductor structure: unidirectional Capacitance: 25pF Leakage current: 0.5µA Max. forward impulse current: 3A Number of channels: 1 Breakdown voltage: 29V Peak pulse power dissipation: 0.165kW |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
| PJE5UFN10A-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS; 6V; 2.5A; unidirectional; DFN2510; Ch: 4 Application: automotive industry Case: DFN2510 Mounting: SMD Type of diode: TVS Semiconductor structure: unidirectional Capacitance: 0.6pF Leakage current: 1µA Max. forward impulse current: 2.5A Number of channels: 4 Max. off-state voltage: 5V Breakdown voltage: 6V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||||
| PJE5UFN10A_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS; 6V; 2.5A; unidirectional; DFN2510-10; Ch: 4 Case: DFN2510-10 Mounting: SMD Type of diode: TVS Semiconductor structure: unidirectional Capacitance: 0.8pF Leakage current: 1µA Max. forward impulse current: 2.5A Number of channels: 4 Max. off-state voltage: 5V Breakdown voltage: 6V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||||
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PJE5V0U8TB-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 5.8÷10.2V; unidirectional; ESD; SOT523 Type of diode: TVS array Max. off-state voltage: 5V Breakdown voltage: 5.8...10.2V Semiconductor structure: unidirectional Case: SOT523 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Version: ESD Application: automotive industry Capacitance: 0.8pF |
на замовлення 19832 шт: термін постачання 14-30 дні (днів) |
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| PJE8400_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 1.1A; SOT523 Case: SOT523 Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.1A Gate-source voltage: 12V Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PJE8401_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 900mA; SOT523 Case: SOT523 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.9A Gate-source voltage: 12V Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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PJE8402_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 2.8A; 300mW; SOT523 Case: SOT523 Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 2.8A Drain current: 0.7A Gate charge: 1.6nC Power dissipation: 0.3W On-state resistance: 0.4Ω Gate-source voltage: ±8V Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PJE8403_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW Case: SOT523 Mounting: SMD Kind of package: reel; tape Pulsed drain current: -2.4A Power dissipation: 0.3W Gate charge: 2.2nC Polarisation: unipolar Drain current: -600mA Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±8V On-state resistance: 0.6Ω |
на замовлення 3975 шт: термін постачання 14-30 дні (днів) |
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| PJE8404_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 600mA; SOT523 Case: SOT523 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.6A Gate-source voltage: 8V Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PJE8405_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 500mA; SOT523 Case: SOT523 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain current: 0.5A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: 8V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PJE8406TB89_R1_00701 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; SC89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.8A Case: SC89 Gate-source voltage: 12V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PJE8407_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 500mA; SOT523 Mounting: SMD Polarisation: unipolar Drain current: 0.5A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: 10V Kind of package: reel; tape Case: SOT523 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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PJE8408_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 300mW; SOT523 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.5A Pulsed drain current: 1A Power dissipation: 0.3W Case: SOT523 Gate-source voltage: ±10V On-state resistance: 3Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3480 шт: термін постачання 14-30 дні (днів) |
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| PJB120N04V-AU_R2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 166A
Case: TO220AB
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 166A
Case: TO220AB
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| PJB140P04E7-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; DFN3333-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 22A
Drain-source voltage: 100V
Gate-source voltage: 20V
Application: automotive industry
Kind of package: reel; tape
Case: DFN3333-8
Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; DFN3333-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 22A
Drain-source voltage: 100V
Gate-source voltage: 20V
Application: automotive industry
Kind of package: reel; tape
Case: DFN3333-8
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| PJC7400_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 7.6A
Drain current: 1.9A
Gate charge: 4.8nC
On-state resistance: 0.11Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 7.6A
Drain current: 1.9A
Gate charge: 4.8nC
On-state resistance: 0.11Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
на замовлення 5345 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 8.20 грн |
| 67+ | 6.35 грн |
| 100+ | 6.01 грн |
| 500+ | 5.42 грн |
| PJC7401_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2075 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 32.82 грн |
| 23+ | 18.62 грн |
| 100+ | 11.94 грн |
| 250+ | 10.16 грн |
| 500+ | 8.97 грн |
| 1000+ | 8.04 грн |
| PJC7404_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Mounting: SMD
Pulsed drain current: 4A
Power dissipation: 0.35W
Gate charge: 1.6nC
Polarisation: unipolar
Drain current: 1A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SOT323
On-state resistance: 0.4Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Mounting: SMD
Pulsed drain current: 4A
Power dissipation: 0.35W
Gate charge: 1.6nC
Polarisation: unipolar
Drain current: 1A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SOT323
On-state resistance: 0.4Ω
товару немає в наявності
В кошику
од. на суму грн.
| PJC7406_R1_00001 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJC7407_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -5.2A
Gate charge: 5.4nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -5.2A
Gate charge: 5.4nC
на замовлення 6105 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.94 грн |
| 61+ | 7.03 грн |
| 65+ | 6.52 грн |
| 100+ | 6.35 грн |
| 500+ | 6.01 грн |
| 1000+ | 5.33 грн |
| 3000+ | 4.83 грн |
| PJC7409_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Mounting: SMD
Polarisation: unipolar
Drain current: 39A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Mounting: SMD
Polarisation: unipolar
Drain current: 39A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
товару немає в наявності
В кошику
од. на суму грн.
| PJC7410_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38A; DFN5060-8
Mounting: SMD
Polarisation: unipolar
Drain current: 38A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38A; DFN5060-8
Mounting: SMD
Polarisation: unipolar
Drain current: 38A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
товару немає в наявності
В кошику
од. на суму грн.
| PJC7428_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Mounting: SMD
Pulsed drain current: 0.6A
Power dissipation: 0.35W
Gate charge: 0.9nC
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
Case: SOT323
On-state resistance: 4Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Mounting: SMD
Pulsed drain current: 0.6A
Power dissipation: 0.35W
Gate charge: 0.9nC
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
Case: SOT323
On-state resistance: 4Ω
на замовлення 2750 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.41 грн |
| 47+ | 9.14 грн |
| 100+ | 5.77 грн |
| 250+ | 4.86 грн |
| 500+ | 4.27 грн |
| 1000+ | 4.25 грн |
| PJC7438-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 63.8A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 63.8A
Drain-source voltage: 80V
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 63.8A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 63.8A
Drain-source voltage: 80V
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJC7438_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 55A
Drain-source voltage: 80V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 55A
Drain-source voltage: 80V
товару немає в наявності
В кошику
од. на суму грн.
| PJC7439-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.25A
Gate charge: 1.1nC
On-state resistance: 13Ω
Power dissipation: 0.35W
Gate-source voltage: ±20V
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.25A
Gate charge: 1.1nC
On-state resistance: 13Ω
Power dissipation: 0.35W
Gate-source voltage: ±20V
Application: automotive industry
на замовлення 2875 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.41 грн |
| 46+ | 9.40 грн |
| 100+ | 5.81 грн |
| 500+ | 4.23 грн |
| 1000+ | 3.69 грн |
| PJC7476_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Mounting: SMD
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Gate charge: 1.8nC
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT323
On-state resistance: 9Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Mounting: SMD
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Gate charge: 1.8nC
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT323
On-state resistance: 9Ω
товару немає в наявності
В кошику
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| PJD100N06SA-AU_L2_006A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50.4A; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50.4A
Case: DFN3333-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50.4A; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50.4A
Case: DFN3333-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| PJD10P10A_L2_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; TO252AA
Case: TO252AA
Mounting: SMD
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; TO252AA
Case: TO252AA
Mounting: SMD
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
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| PJD11N06A-AU_L2_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Polarisation: unipolar
Drain current: 11A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Polarisation: unipolar
Drain current: 11A
на замовлення 2990 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 41.02 грн |
| 17+ | 25.82 грн |
| 100+ | 23.28 грн |
| 500+ | 20.57 грн |
| 1000+ | 18.54 грн |
| PJD11N06A_L2_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| PJD13N10A_L2_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 9000 шт
В кошику
од. на суму грн.
| PJD15P06A-AU_L2_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 25W; TO252AA
Case: TO252AA
Kind of package: reel; tape
Pulsed drain current: -60A
Power dissipation: 25W
Gate charge: 17nC
Polarisation: unipolar
Drain current: -15A
Kind of channel: enhancement
Drain-source voltage: -60V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 25W; TO252AA
Case: TO252AA
Kind of package: reel; tape
Pulsed drain current: -60A
Power dissipation: 25W
Gate charge: 17nC
Polarisation: unipolar
Drain current: -15A
Kind of channel: enhancement
Drain-source voltage: -60V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
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В кошику
од. на суму грн.
| PJD15P06A_L2_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; TO252AA
Case: TO252AA
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; TO252AA
Case: TO252AA
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Mounting: SMD
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од. на суму грн.
| PJD16N06A-AU_L2_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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В кошику
од. на суму грн.
| PJD16N06A_L2_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| PJD16P06A_L2_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -16A; Idm: -64A; 2W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -16A
Power dissipation: 2W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -64A
Gate charge: 22nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -16A; Idm: -64A; 2W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -16A
Power dissipation: 2W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -64A
Gate charge: 22nC
на замовлення 10428 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 49.23 грн |
| 14+ | 31.41 грн |
| 100+ | 21.42 грн |
| 250+ | 19.30 грн |
| PJD18N20_L2_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Case: TO252AA
Mounting: SMD
On-state resistance: 0.16Ω
Drain current: 11A
Gate-source voltage: ±20V
Power dissipation: 83W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 24nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Case: TO252AA
Mounting: SMD
On-state resistance: 0.16Ω
Drain current: 11A
Gate-source voltage: ±20V
Power dissipation: 83W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 24nC
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од. на суму грн.
| PJD25N06A-AU_L2_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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В кошику
од. на суму грн.
| PJD25N06A_L2_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 979 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 42.85 грн |
| 16+ | 27.00 грн |
| 100+ | 19.72 грн |
| 500+ | 16.34 грн |
| PJD30N04S-AU_L2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 43A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 43A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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В кошику
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| PJD35N06A_L2_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| PJD40N06A-AU_L2_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Case: TO252AA
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: 20V
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Case: TO252AA
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: 20V
Kind of package: reel; tape
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| PJD40N06A_L2_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
на замовлення 8914 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 49.23 грн |
| 14+ | 30.73 грн |
| 100+ | 27.60 грн |
| 500+ | 24.38 грн |
| 1000+ | 22.01 грн |
| 3000+ | 21.16 грн |
| PJD40P03E-AU_L2_006A1 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -33A; Idm: -94A; 17W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -33A
Pulsed drain current: -94A
Power dissipation: 17W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 18.8mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -33A; Idm: -94A; 17W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -33A
Pulsed drain current: -94A
Power dissipation: 17W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 18.8mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
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| PJD45N06A_L2_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 39nC
On-state resistance: 15mΩ
Drain current: 45A
Gate-source voltage: ±20V
Power dissipation: 63W
Drain-source voltage: 60V
Pulsed drain current: 180A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 39nC
On-state resistance: 15mΩ
Drain current: 45A
Gate-source voltage: ±20V
Power dissipation: 63W
Drain-source voltage: 60V
Pulsed drain current: 180A
Kind of channel: enhancement
на замовлення 154 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 63.81 грн |
| 11+ | 41.14 грн |
| 100+ | 28.36 грн |
| PJD45P03E-AU_L2_006A1 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -42A; Idm: -128A; 21W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -42A
Power dissipation: 21W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
Pulsed drain current: -128A
Application: automotive industry
Kind of package: reel
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -42A; Idm: -128A; 21W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -42A
Power dissipation: 21W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
Pulsed drain current: -128A
Application: automotive industry
Kind of package: reel
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| PJD50N04-AU_L2_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| PJD50N04V-AU_L2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| PJD60N04S-AU_L2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| PJD60N04V-AU_L2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 154A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 154A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 154A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 154A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| PJD60N06SA-AU_L2_006A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 66A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 66A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 66A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 66A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| PJD70N10SA-AU_L2_006A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 88A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 88A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 88A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 88A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| PJD70P03E-AU_L2_006A1 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -77A; Idm: -225A; 40W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -77A
Pulsed drain current: -225A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -77A; Idm: -225A; 40W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -77A
Pulsed drain current: -225A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
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| PJD80N03_L2_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| PJD80N06SA-AU_L2_006A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 94A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 94A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 94A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 94A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| PJD90P03E-AU_L2_006A1 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -88A; Idm: -219A; 40W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -88A
Pulsed drain current: -219A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -88A; Idm: -219A; 40W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -88A
Pulsed drain current: -219A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
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| PJD9P06A-AU_L2_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| PJE138K_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 350mA; Idm: 1.2A; 223mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 350mA; Idm: 1.2A; 223mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 514 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.76 грн |
| 56+ | 7.62 грн |
| 100+ | 4.55 грн |
| 500+ | 3.99 грн |
| PJE28VM2FN2_R1_00501 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Case: DFN1006-2
Mounting: SMD
Max. off-state voltage: 28V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 0.5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 29V
Peak pulse power dissipation: 0.165kW
Category: Protection diodes - arrays
Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Case: DFN1006-2
Mounting: SMD
Max. off-state voltage: 28V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 0.5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 29V
Peak pulse power dissipation: 0.165kW
товару немає в наявності
Мінімальне замовлення: 10000 шт
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| PJE28VM2TS_R1_00001 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 28V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 0.5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 29V
Peak pulse power dissipation: 0.165kW
Category: Protection diodes - arrays
Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 28V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 0.5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 29V
Peak pulse power dissipation: 0.165kW
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| PJE5UFN10A-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 2.5A; unidirectional; DFN2510; Ch: 4
Application: automotive industry
Case: DFN2510
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.6pF
Leakage current: 1µA
Max. forward impulse current: 2.5A
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 2.5A; unidirectional; DFN2510; Ch: 4
Application: automotive industry
Case: DFN2510
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.6pF
Leakage current: 1µA
Max. forward impulse current: 2.5A
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| PJE5UFN10A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 2.5A; unidirectional; DFN2510-10; Ch: 4
Case: DFN2510-10
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.8pF
Leakage current: 1µA
Max. forward impulse current: 2.5A
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 2.5A; unidirectional; DFN2510-10; Ch: 4
Case: DFN2510-10
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.8pF
Leakage current: 1µA
Max. forward impulse current: 2.5A
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| PJE5V0U8TB-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.8÷10.2V; unidirectional; ESD; SOT523
Type of diode: TVS array
Max. off-state voltage: 5V
Breakdown voltage: 5.8...10.2V
Semiconductor structure: unidirectional
Case: SOT523
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Application: automotive industry
Capacitance: 0.8pF
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.8÷10.2V; unidirectional; ESD; SOT523
Type of diode: TVS array
Max. off-state voltage: 5V
Breakdown voltage: 5.8...10.2V
Semiconductor structure: unidirectional
Case: SOT523
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Application: automotive industry
Capacitance: 0.8pF
на замовлення 19832 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 13.67 грн |
| 50+ | 10.16 грн |
| 100+ | 9.06 грн |
| 250+ | 7.70 грн |
| 500+ | 7.20 грн |
| 1000+ | 6.94 грн |
| 4000+ | 6.26 грн |
| 8000+ | 5.76 грн |
| 12000+ | 5.59 грн |
| PJE8400_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.1A
Gate-source voltage: 12V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.1A
Gate-source voltage: 12V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
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| PJE8401_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 900mA; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.9A
Gate-source voltage: 12V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 900mA; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.9A
Gate-source voltage: 12V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
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| PJE8402_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 2.8A; 300mW; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 2.8A
Drain current: 0.7A
Gate charge: 1.6nC
Power dissipation: 0.3W
On-state resistance: 0.4Ω
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 2.8A; 300mW; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 2.8A
Drain current: 0.7A
Gate charge: 1.6nC
Power dissipation: 0.3W
On-state resistance: 0.4Ω
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
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| PJE8403_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: -2.4A
Power dissipation: 0.3W
Gate charge: 2.2nC
Polarisation: unipolar
Drain current: -600mA
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 0.6Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: -2.4A
Power dissipation: 0.3W
Gate charge: 2.2nC
Polarisation: unipolar
Drain current: -600mA
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 0.6Ω
на замовлення 3975 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.79 грн |
| 38+ | 11.17 грн |
| 50+ | 8.72 грн |
| 100+ | 7.70 грн |
| 500+ | 5.76 грн |
| 1000+ | 5.50 грн |
| PJE8404_R1_00001 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 600mA; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Gate-source voltage: 8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 600mA; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Gate-source voltage: 8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
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| PJE8405_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; SOT523
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: 8V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; SOT523
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: 8V
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| PJE8406TB89_R1_00701 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; SC89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.8A
Case: SC89
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; SC89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.8A
Case: SC89
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| PJE8407_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; SOT523
Mounting: SMD
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT523
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; SOT523
Mounting: SMD
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT523
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| PJE8408_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 300mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Pulsed drain current: 1A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±10V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 300mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Pulsed drain current: 1A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±10V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3480 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 10.03 грн |
| 70+ | 6.09 грн |
| 100+ | 5.25 грн |










