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PJMP120N60EC_T0_00001 PJMP120N60EC_T0_00001 PanJit Semiconductor PJMP120N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
на замовлення 196 шт:
термін постачання 14-30 дні (днів)
2+285.34 грн
10+237.02 грн
50+198.93 грн
100+178.61 грн
Мінімальне замовлення: 2 шт
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PJMP125N60FRC_T0_00601 PJMP125N60FRC_T0_00601 PanJit Semiconductor PJMP125N60FRC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO220AB
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Kind of package: reel; tape
Case: TO220AB
Mounting: THT
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PJMP130N65EC_T0_00001 PJMP130N65EC_T0_00001 PanJit Semiconductor PJMP130N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP190N65FR2_T0_00601 PJMP190N65FR2_T0_00601 PanJit Semiconductor PJMP190N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP210N65EC_T0_00601 PJMP210N65EC_T0_00601 PanJit Semiconductor PJMP210N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
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PJMP360N60EC_T0_00001 PJMP360N60EC_T0_00001 PanJit Semiconductor PJMP360N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220AB
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Pulsed drain current: 23A
Gate charge: 18.7nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 600V
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PJP125N06SA-AU_T0_006A1 PJP125N06SA-AU_T0_006A1 PanJit Semiconductor PJP125N06SA-AU.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 215A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 215A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJP18N20_T0_00001 PanJit Semiconductor PJx18N20.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Case: TO220AB
Mounting: THT
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
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PJQ4435EP-AU_R2_002A1 PanJit Semiconductor PJQ4435EP-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 45A
Case: DFN3333-8
Gate-source voltage: 25V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJQ4435EP_R2_00201 PanJit Semiconductor PJQ4435EP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -41A; Idm: -138A; 13.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -41A
Pulsed drain current: -138A
Power dissipation: 13.5W
Case: DFN3333-8
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel
Kind of channel: enhancement
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PJQ4437EP-AU_R2_002A1 PanJit Semiconductor PJQ4437EP-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 41A; DFN3333-8
Polarisation: unipolar
Application: automotive industry
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain current: 41A
Drain-source voltage: 30V
Gate-source voltage: 25V
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PJQ4437EP_R2_00201 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -38A; Idm: -123A; 13.5W
Polarisation: unipolar
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel
Pulsed drain current: -123A
Drain current: -38A
Drain-source voltage: -30V
Gate charge: 32nC
On-state resistance: 15.4mΩ
Power dissipation: 13.5W
Gate-source voltage: ±25V
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PJQ4446P-AU_R2_000A1 PanJit Semiconductor PJQ4446P-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; DFN3333-8
Application: automotive industry
Polarisation: unipolar
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 48A
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PJQ44605AP-AU_R2_002A1 PanJit Semiconductor PJQ44605AP-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 38A; DFN3333-8
Polarisation: unipolar
Drain current: 38A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN3333-8
Mounting: SMD
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PJQ4463AP-AU_R2_000A1 PanJit Semiconductor PJQ4463AP-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.2A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 4.2A
Gate-source voltage: 20V
Polarisation: unipolar
Application: automotive industry
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PJQ4463AP_R2_00001 PanJit Semiconductor PJQ4463AP.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.2A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 4.2A
Gate-source voltage: 20V
Polarisation: unipolar
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PJQ4464AP-AU_R2_000A1 PanJit Semiconductor PJQ4464AP-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; DFN3333-8
Polarisation: unipolar
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain current: 33A
Gate-source voltage: 20V
Drain-source voltage: 60V
Application: automotive industry
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PJQ4465AP-AU_R2_000A1 PJQ4465AP-AU_R2_000A1 PanJit Semiconductor PJQ4465AP-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15A
Case: DFN3333-8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 20W
Pulsed drain current: -60A
Gate charge: 22nC
On-state resistance: 65mΩ
Application: automotive industry
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PJQ4465AP_R2_00001 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: DFN3333-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJQ4466P_R2_00001 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 33A
Gate-source voltage: 20V
Drain-source voltage: 60V
Kind of package: reel; tape
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PJQ4468AP-AU_R2_000A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; DFN3333-8
Case: DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
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PJQ4544S6P-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; DFN3333-8
Case: DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
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PJQ4544S6VP-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; DFN3333-8
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Case: DFN3333-8
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
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PJQ4546VP-AU_R2_002A1 PJQ4546VP-AU_R2_002A1 PanJit Semiconductor PJQ4546VP-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 61A; Idm: 244A; 42W; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 61A
Pulsed drain current: 244A
Power dissipation: 42W
Case: DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJQ4548P-AU_R2_002A1 PJQ4548P-AU_R2_002A1 PanJit Semiconductor PJQ4548P-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 172A; 30W; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 13nC
On-state resistance: 12.5mΩ
Gate-source voltage: ±20V
Power dissipation: 30W
Drain current: 43A
Drain-source voltage: 40V
Pulsed drain current: 172A
Polarisation: unipolar
Application: automotive industry
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PJQ4548S6P-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 60A; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Drain current: 60A
Drain-source voltage: 40V
Polarisation: unipolar
Application: automotive industry
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PJQ4548S6VP-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Drain current: 56A
Drain-source voltage: 40V
Polarisation: unipolar
Application: automotive industry
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PJQ4548VP-AU_R2_002A1 PJQ4548VP-AU_R2_002A1 PanJit Semiconductor PJQ4548VP-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 30W; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 9.5nC
On-state resistance: 12.7mΩ
Gate-source voltage: ±20V
Power dissipation: 30W
Drain current: 40A
Drain-source voltage: 40V
Pulsed drain current: 160A
Polarisation: unipolar
Application: automotive industry
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PJQ4568AP-AU_R2_002A1 PanJit Semiconductor PJQ4568AP-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 36A; DFN3333-8
Mounting: SMD
Polarisation: unipolar
Drain current: 36A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN3333-8
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PJQ4594P-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; DFN3333-8
Case: DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 150V
Application: automotive industry
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PJQ4670AP_R2_00201 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 10A; Idm: 148A; 15W; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 10A
Pulsed drain current: 148A
Power dissipation: 15W
Case: DFN3333-8
Gate-source voltage: 20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJQ5427_R2_006A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; DFN5060-8
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 100A
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PJQ5435E-AU_R2_006A1 PanJit Semiconductor PJQ5435E-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 47A; DFN5060-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 47A
Drain-source voltage: 30V
Gate-source voltage: 25V
Application: automotive industry
Case: DFN5060-8
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PJQ5435E_R2_00201 PanJit Semiconductor PJQ5435E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 47A; DFN5060-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 47A
Drain-source voltage: 30V
Gate-source voltage: 25V
Case: DFN5060-8
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PJQ5458A-AU_R2_000A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; DFN5060-8
Application: automotive industry
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 16A
Gate-source voltage: 20V
Drain-source voltage: 60V
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PJQ5468A-AU_R2_000A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; DFN5060-8
Case: DFN5060-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Polarisation: unipolar
Drain current: 25A
Kind of channel: enhancement
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PJQ5468A_R2_00001 PanJit Semiconductor PJQ5468A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; DFN5060-8
Case: DFN5060-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Polarisation: unipolar
Drain current: 25A
Kind of channel: enhancement
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PJQ5518C-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 318A; DFN5060X-8
Mounting: SMD
Polarisation: unipolar
Drain current: 318A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060X-8
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 Мінімальне замовлення: 30000 шт
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PJQ5518S6C-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 178A; DFN5060X-8
Mounting: SMD
Polarisation: unipolar
Drain current: 178A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060X-8
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PJQ5524-AU_R2_002A1 PanJit Semiconductor PJQ5524-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 93A; DFN5060-8
Mounting: SMD
Polarisation: unipolar
Drain current: 93A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
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PJQ5524_R2_00201 PanJit Semiconductor PJQ5524.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 93A; DFN5060-8
Mounting: SMD
Polarisation: unipolar
Drain current: 93A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
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PJQ5524S6-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 77A; DFN5060-8
Mounting: SMD
Polarisation: unipolar
Drain current: 77A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
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PJQ5526-AU_R2_002A1 PanJit Semiconductor PJQ5526-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 73A
Application: automotive industry
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PJQ5526_R2_00201 PanJit Semiconductor PJQ5526.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 73A
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PJQ5528_R2_00201 PanJit Semiconductor PJQ5528.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJQ5544-AU_R2_002A1 PJQ5544-AU_R2_002A1 PanJit Semiconductor PJQ5544-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 100W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 1922 шт:
термін постачання 14-30 дні (днів)
5+112.13 грн
10+66.71 грн
100+52.15 грн
250+43.76 грн
500+39.45 грн
1000+36.48 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
PJQ5544S6-AU_R2_002A1 PanJit Semiconductor PJQ5544S6-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 101A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 101A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJQ5544S6V-AU_R2_002A1 PanJit Semiconductor PJQ5544S6V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; DFN5060-8
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
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PJQ5546V-AU_R2_002A1 PJQ5546V-AU_R2_002A1 PanJit Semiconductor PJQ5546V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 316A; 65W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 79A
Pulsed drain current: 316A
Power dissipation: 65W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJQ5548V-AU_R2_002A1 PJQ5548V-AU_R2_002A1 PanJit Semiconductor PJQ5548V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 45A; Idm: 180A; 36W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 36W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJQ5968A-AU_R2_002A1 PanJit Semiconductor PJQ5968A-AU.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 36A; DFN5060-8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJS6421_S1_00001 PJS6421_S1_00001 PanJit Semiconductor PJS6421.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.4A; Idm: -29.6A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.4A
Pulsed drain current: -29.6A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±10V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 16.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2925 шт:
термін постачання 14-30 дні (днів)
16+29.17 грн
19+22.43 грн
100+14.81 грн
500+10.84 грн
1000+9.65 грн
Мінімальне замовлення: 16 шт
В кошику  од. на суму  грн.
PJS6601_S1_00001 PJS6601_S1_00001 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Power dissipation: 1.25W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 95/190mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Gate charge: 4.6/5.4nC
на замовлення 2576 шт:
термін постачання 14-30 дні (днів)
17+28.26 грн
24+18.12 грн
100+13.80 грн
250+12.27 грн
500+11.26 грн
1000+10.24 грн
Мінімальне замовлення: 17 шт
В кошику  од. на суму  грн.
PJS6815_S1_00001 PanJit Semiconductor PJS6815.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SOT363
Drain current: 0.36A
Gate-source voltage: 20V
Drain-source voltage: 50V
Polarisation: unipolar
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PJSD03LCFN2_R1_00501 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.4V; 6A; bidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Case: DFN1006-2
Mounting: SMD
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Capacitance: 25pF
Leakage current: 2.5µA
Max. forward impulse current: 6A
Number of channels: 1
Breakdown voltage: 5.4V
товару немає в наявності
 Мінімальне замовлення: 10000 шт
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PJSD03TS-AU_R1_000A1 PJSD03TS-AU_R1_000A1 PanJit Semiconductor PJSD03TS-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 4V; 5A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.12kW
Max. off-state voltage: 3.3V
Breakdown voltage: 4V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Application: automotive industry
Capacitance: 0.2nF
на замовлення 3473 шт:
термін постачання 14-30 дні (днів)
42+10.94 грн
57+7.45 грн
100+5.56 грн
250+5.01 грн
500+4.63 грн
1000+4.46 грн
2500+4.05 грн
Мінімальне замовлення: 42 шт
В кошику  од. на суму  грн.
PJSD03TS_R1_00001 PanJit Semiconductor PJSD03TS_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 4V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 4V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.12kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 3.3V
Leakage current: 0.2mA
Number of channels: 1
Capacitance: 0.2nF
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 Мінімальне замовлення: 5000 шт
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PJSD05CFN2_R1_00501 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 15A; bidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Max. off-state voltage: 5V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Capacitance: 70pF
Number of channels: 1
Breakdown voltage: 6V
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PJSD05CTM_R1_00001 PJSD05CTM_R1_00001 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.78V; 1A; 0.1kW; bidirectional; SOD923; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.1kW
Max. off-state voltage: 5V
Max. forward impulse current: 1A
Semiconductor structure: bidirectional
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Capacitance: 30pF
Number of channels: 1
Breakdown voltage: 5.78V
товару немає в наявності
 Мінімальне замовлення: 8000 шт
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PJSD05CW-AU_R1_000A1 PJSD05CW-AU_R1_000A1 PanJit Semiconductor PJSD05CW-AU_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 6.37V; 24A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 5µA
Capacitance: 0.2nF
Number of channels: 1
Breakdown voltage: 6.37V
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 5000 шт
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PJMP120N60EC_T0_00001 PJMP120N60EC.pdf
PJMP120N60EC_T0_00001
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
на замовлення 196 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+285.34 грн
10+237.02 грн
50+198.93 грн
100+178.61 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PJMP125N60FRC_T0_00601 PJMP125N60FRC.pdf
PJMP125N60FRC_T0_00601
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO220AB
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Kind of package: reel; tape
Case: TO220AB
Mounting: THT
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PJMP130N65EC_T0_00001 PJMP130N65EC.pdf
PJMP130N65EC_T0_00001
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP190N65FR2_T0_00601 PJMP190N65FR2
PJMP190N65FR2_T0_00601
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP210N65EC_T0_00601 PJMP210N65EC.pdf
PJMP210N65EC_T0_00601
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
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PJMP360N60EC_T0_00001 PJMP360N60EC.pdf
PJMP360N60EC_T0_00001
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220AB
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Pulsed drain current: 23A
Gate charge: 18.7nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 600V
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PJP125N06SA-AU_T0_006A1 PJP125N06SA-AU.pdf
PJP125N06SA-AU_T0_006A1
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 215A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 215A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJP18N20_T0_00001 PJx18N20.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Case: TO220AB
Mounting: THT
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
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PJQ4435EP-AU_R2_002A1 PJQ4435EP-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 45A
Case: DFN3333-8
Gate-source voltage: 25V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJQ4435EP_R2_00201 PJQ4435EP.pdf
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -41A; Idm: -138A; 13.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -41A
Pulsed drain current: -138A
Power dissipation: 13.5W
Case: DFN3333-8
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel
Kind of channel: enhancement
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PJQ4437EP-AU_R2_002A1 PJQ4437EP-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 41A; DFN3333-8
Polarisation: unipolar
Application: automotive industry
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain current: 41A
Drain-source voltage: 30V
Gate-source voltage: 25V
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PJQ4437EP_R2_00201
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -38A; Idm: -123A; 13.5W
Polarisation: unipolar
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel
Pulsed drain current: -123A
Drain current: -38A
Drain-source voltage: -30V
Gate charge: 32nC
On-state resistance: 15.4mΩ
Power dissipation: 13.5W
Gate-source voltage: ±25V
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PJQ4446P-AU_R2_000A1 PJQ4446P-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; DFN3333-8
Application: automotive industry
Polarisation: unipolar
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 48A
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PJQ44605AP-AU_R2_002A1 PJQ44605AP-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 38A; DFN3333-8
Polarisation: unipolar
Drain current: 38A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN3333-8
Mounting: SMD
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PJQ4463AP-AU_R2_000A1 PJQ4463AP-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.2A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 4.2A
Gate-source voltage: 20V
Polarisation: unipolar
Application: automotive industry
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PJQ4463AP_R2_00001 PJQ4463AP.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.2A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 4.2A
Gate-source voltage: 20V
Polarisation: unipolar
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PJQ4464AP-AU_R2_000A1 PJQ4464AP-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; DFN3333-8
Polarisation: unipolar
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain current: 33A
Gate-source voltage: 20V
Drain-source voltage: 60V
Application: automotive industry
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PJQ4465AP-AU_R2_000A1 PJQ4465AP-AU.pdf
PJQ4465AP-AU_R2_000A1
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15A
Case: DFN3333-8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 20W
Pulsed drain current: -60A
Gate charge: 22nC
On-state resistance: 65mΩ
Application: automotive industry
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PJQ4465AP_R2_00001
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: DFN3333-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику  од. на суму  грн.
PJQ4466P_R2_00001
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 33A
Gate-source voltage: 20V
Drain-source voltage: 60V
Kind of package: reel; tape
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В кошику  од. на суму  грн.
PJQ4468AP-AU_R2_000A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; DFN3333-8
Case: DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
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PJQ4544S6P-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; DFN3333-8
Case: DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
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PJQ4544S6VP-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; DFN3333-8
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Case: DFN3333-8
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
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PJQ4546VP-AU_R2_002A1 PJQ4546VP-AU.pdf
PJQ4546VP-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 61A; Idm: 244A; 42W; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 61A
Pulsed drain current: 244A
Power dissipation: 42W
Case: DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
PJQ4548P-AU_R2_002A1 PJQ4548P-AU.pdf
PJQ4548P-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 172A; 30W; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 13nC
On-state resistance: 12.5mΩ
Gate-source voltage: ±20V
Power dissipation: 30W
Drain current: 43A
Drain-source voltage: 40V
Pulsed drain current: 172A
Polarisation: unipolar
Application: automotive industry
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В кошику  од. на суму  грн.
PJQ4548S6P-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 60A; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Drain current: 60A
Drain-source voltage: 40V
Polarisation: unipolar
Application: automotive industry
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В кошику  од. на суму  грн.
PJQ4548S6VP-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Drain current: 56A
Drain-source voltage: 40V
Polarisation: unipolar
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
PJQ4548VP-AU_R2_002A1 PJQ4548VP-AU.pdf
PJQ4548VP-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 30W; DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 9.5nC
On-state resistance: 12.7mΩ
Gate-source voltage: ±20V
Power dissipation: 30W
Drain current: 40A
Drain-source voltage: 40V
Pulsed drain current: 160A
Polarisation: unipolar
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
PJQ4568AP-AU_R2_002A1 PJQ4568AP-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 36A; DFN3333-8
Mounting: SMD
Polarisation: unipolar
Drain current: 36A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN3333-8
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В кошику  од. на суму  грн.
PJQ4594P-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; DFN3333-8
Case: DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 150V
Application: automotive industry
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В кошику  од. на суму  грн.
PJQ4670AP_R2_00201
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 10A; Idm: 148A; 15W; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 10A
Pulsed drain current: 148A
Power dissipation: 15W
Case: DFN3333-8
Gate-source voltage: 20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику  од. на суму  грн.
PJQ5427_R2_006A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; DFN5060-8
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 100A
товару немає в наявності
В кошику  од. на суму  грн.
PJQ5435E-AU_R2_006A1 PJQ5435E-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 47A; DFN5060-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 47A
Drain-source voltage: 30V
Gate-source voltage: 25V
Application: automotive industry
Case: DFN5060-8
товару немає в наявності
В кошику  од. на суму  грн.
PJQ5435E_R2_00201 PJQ5435E.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 47A; DFN5060-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 47A
Drain-source voltage: 30V
Gate-source voltage: 25V
Case: DFN5060-8
товару немає в наявності
В кошику  од. на суму  грн.
PJQ5458A-AU_R2_000A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; DFN5060-8
Application: automotive industry
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 16A
Gate-source voltage: 20V
Drain-source voltage: 60V
товару немає в наявності
В кошику  од. на суму  грн.
PJQ5468A-AU_R2_000A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; DFN5060-8
Case: DFN5060-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Polarisation: unipolar
Drain current: 25A
Kind of channel: enhancement
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В кошику  од. на суму  грн.
PJQ5468A_R2_00001 PJQ5468A.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; DFN5060-8
Case: DFN5060-8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Polarisation: unipolar
Drain current: 25A
Kind of channel: enhancement
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В кошику  од. на суму  грн.
PJQ5518C-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 318A; DFN5060X-8
Mounting: SMD
Polarisation: unipolar
Drain current: 318A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060X-8
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику  од. на суму  грн.
PJQ5518S6C-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 178A; DFN5060X-8
Mounting: SMD
Polarisation: unipolar
Drain current: 178A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060X-8
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В кошику  од. на суму  грн.
PJQ5524-AU_R2_002A1 PJQ5524-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 93A; DFN5060-8
Mounting: SMD
Polarisation: unipolar
Drain current: 93A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
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В кошику  од. на суму  грн.
PJQ5524_R2_00201 PJQ5524.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 93A; DFN5060-8
Mounting: SMD
Polarisation: unipolar
Drain current: 93A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
товару немає в наявності
В кошику  од. на суму  грн.
PJQ5524S6-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 77A; DFN5060-8
Mounting: SMD
Polarisation: unipolar
Drain current: 77A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
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В кошику  од. на суму  грн.
PJQ5526-AU_R2_002A1 PJQ5526-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 73A
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
PJQ5526_R2_00201 PJQ5526.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 73A
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В кошику  од. на суму  грн.
PJQ5528_R2_00201 PJQ5528.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
PJQ5544-AU_R2_002A1 PJQ5544-AU.pdf
PJQ5544-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 100W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 1922 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
5+112.13 грн
10+66.71 грн
100+52.15 грн
250+43.76 грн
500+39.45 грн
1000+36.48 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
PJQ5544S6-AU_R2_002A1 PJQ5544S6-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 101A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 101A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
PJQ5544S6V-AU_R2_002A1 PJQ5544S6V-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; DFN5060-8
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
товару немає в наявності
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PJQ5546V-AU_R2_002A1 PJQ5546V-AU.pdf
PJQ5546V-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 316A; 65W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 79A
Pulsed drain current: 316A
Power dissipation: 65W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
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PJQ5548V-AU_R2_002A1 PJQ5548V-AU.pdf
PJQ5548V-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 45A; Idm: 180A; 36W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 36W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
PJQ5968A-AU_R2_002A1 PJQ5968A-AU.pdf
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 36A; DFN5060-8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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В кошику  од. на суму  грн.
PJS6421_S1_00001 PJS6421.pdf
PJS6421_S1_00001
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.4A; Idm: -29.6A; 2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.4A
Pulsed drain current: -29.6A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±10V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 16.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2925 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
16+29.17 грн
19+22.43 грн
100+14.81 грн
500+10.84 грн
1000+9.65 грн
Мінімальне замовлення: 16 шт
В кошику  од. на суму  грн.
PJS6601_S1_00001
PJS6601_S1_00001
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Power dissipation: 1.25W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 95/190mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Gate charge: 4.6/5.4nC
на замовлення 2576 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
17+28.26 грн
24+18.12 грн
100+13.80 грн
250+12.27 грн
500+11.26 грн
1000+10.24 грн
Мінімальне замовлення: 17 шт
В кошику  од. на суму  грн.
PJS6815_S1_00001 PJS6815.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SOT363
Drain current: 0.36A
Gate-source voltage: 20V
Drain-source voltage: 50V
Polarisation: unipolar
товару немає в наявності
В кошику  од. на суму  грн.
PJSD03LCFN2_R1_00501
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.4V; 6A; bidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Case: DFN1006-2
Mounting: SMD
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Capacitance: 25pF
Leakage current: 2.5µA
Max. forward impulse current: 6A
Number of channels: 1
Breakdown voltage: 5.4V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
PJSD03TS-AU_R1_000A1 PJSD03TS-AU_SERIES.pdf
PJSD03TS-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 4V; 5A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.12kW
Max. off-state voltage: 3.3V
Breakdown voltage: 4V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Application: automotive industry
Capacitance: 0.2nF
на замовлення 3473 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
42+10.94 грн
57+7.45 грн
100+5.56 грн
250+5.01 грн
500+4.63 грн
1000+4.46 грн
2500+4.05 грн
Мінімальне замовлення: 42 шт
В кошику  од. на суму  грн.
PJSD03TS_R1_00001 PJSD03TS_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 4V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 4V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.12kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 3.3V
Leakage current: 0.2mA
Number of channels: 1
Capacitance: 0.2nF
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
PJSD05CFN2_R1_00501
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 15A; bidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Max. off-state voltage: 5V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Capacitance: 70pF
Number of channels: 1
Breakdown voltage: 6V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
PJSD05CTM_R1_00001
PJSD05CTM_R1_00001
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.78V; 1A; 0.1kW; bidirectional; SOD923; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.1kW
Max. off-state voltage: 5V
Max. forward impulse current: 1A
Semiconductor structure: bidirectional
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Capacitance: 30pF
Number of channels: 1
Breakdown voltage: 5.78V
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
PJSD05CW-AU_R1_000A1 PJSD05CW-AU_SERIES.pdf
PJSD05CW-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6.37V; 24A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 5µA
Capacitance: 0.2nF
Number of channels: 1
Breakdown voltage: 6.37V
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
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