Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1487) > Сторінка 22 з 25
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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| PJQ5435E-AU_R2_006A1 | PanJit Semiconductor |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 47A; DFN5060-8 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain current: 47A Drain-source voltage: 30V Gate-source voltage: 25V Application: automotive industry Case: DFN5060-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJQ5435E_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 47A; DFN5060-8 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain current: 47A Drain-source voltage: 30V Gate-source voltage: 25V Case: DFN5060-8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJQ5458A-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 16A; DFN5060-8 Application: automotive industry Kind of package: reel; tape Case: DFN5060-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 16A Gate-source voltage: 20V Drain-source voltage: 60V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJQ5526-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 73A; DFN5060-8 Mounting: SMD Case: DFN5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate-source voltage: 20V Drain-source voltage: 30V Drain current: 73A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJQ5526_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 73A; DFN5060-8 Mounting: SMD Case: DFN5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate-source voltage: 20V Drain-source voltage: 30V Drain current: 73A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJQ5544S6-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 101A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 101A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJQ5544S6V-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 90A; DFN5060-8 Type of transistor: N-MOSFET Drain-source voltage: 40V Drain current: 90A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Application: automotive industry Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJQ5546V-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 316A; 65W; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 79A Pulsed drain current: 316A Power dissipation: 65W Case: DFN5060-8 Gate-source voltage: ±20V On-state resistance: 7.3mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PJQ5808-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -31A; DFN5060-8 Kind of package: reel; tape Case: DFN5060-8 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain current: -31A Drain-source voltage: -30V Gate-source voltage: 25V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJS6600_S1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20V; 4.1A; SOT23-6 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.1A Case: SOT23-6 Gate-source voltage: 12V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJS6601-AU_S1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20V; 4.1A; SOT23-6 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.1A Case: SOT23-6 Gate-source voltage: 12V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJS6601_S1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 4.1/-3.1A Case: SOT23-6 Gate-source voltage: ±12V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 4.6/5.4nC On-state resistance: 95/190mΩ Power dissipation: 1.25W |
на замовлення 2586 шт: термін постачання 14-30 дні (днів) |
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| PJS6602_S1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20V; 5.2A; SOT23-6 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.2A Case: SOT23-6 Gate-source voltage: 12V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJS6603_S1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30V; 4.2A; SOT23-6 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.2A Case: SOT23-6 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJS6604_S1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 4A; SOT23-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Case: SOT23-6 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJS6815_S1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; SOT363 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET x2 Mounting: SMD Case: SOT363 Drain current: 0.36A Gate-source voltage: 20V Drain-source voltage: 50V Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJSD03LCFN2_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 5.4V; 6A; bidirectional; DFN1006-2; Ch: 1 Type of diode: TVS Case: DFN1006-2 Mounting: SMD Max. off-state voltage: 3.3V Semiconductor structure: bidirectional Capacitance: 25pF Leakage current: 2.5µA Max. forward impulse current: 6A Number of channels: 1 Breakdown voltage: 5.4V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||
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PJSD03TS-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; ESD; 120W; 4V; 5A; unidirectional; SOD523; reel,tape Mounting: SMD Capacitance: 0.2nF Leakage current: 0.2mA Max. forward impulse current: 5A Max. off-state voltage: 3.3V Breakdown voltage: 4V Peak pulse power dissipation: 0.12kW Application: automotive industry Version: ESD Case: SOD523 Kind of package: reel; tape Type of diode: TVS Semiconductor structure: unidirectional |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PJSD03TS_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 4V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1 Type of diode: TVS Breakdown voltage: 4V Max. forward impulse current: 5A Peak pulse power dissipation: 0.12kW Semiconductor structure: unidirectional Mounting: SMD Case: SOD523 Max. off-state voltage: 3.3V Leakage current: 0.2mA Number of channels: 1 Capacitance: 0.2nF |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||
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PJSD05TS-AU_R1_000A1 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; ESD; 120W; 6V; 5A; unidirectional; SOD523; reel,tape Mounting: SMD Capacitance: 0.11nF Leakage current: 5µA Max. forward impulse current: 5A Max. off-state voltage: 5V Breakdown voltage: 6V Peak pulse power dissipation: 0.12kW Application: automotive industry Version: ESD Case: SOD523 Kind of package: reel; tape Type of diode: TVS Semiconductor structure: unidirectional |
на замовлення 4548 шт: термін постачання 14-30 дні (днів) |
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| PJSD07TS-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 7.5V; 8.8A; 0.12kW; unidirectional; SOD523; Ch: 1 Mounting: SMD Capacitance: 85pF Leakage current: 0.15µA Max. forward impulse current: 8.8A Number of channels: 1 Max. off-state voltage: 7V Breakdown voltage: 7.5V Peak pulse power dissipation: 0.12kW Application: automotive industry Case: SOD523 Type of diode: TVS Semiconductor structure: unidirectional |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||
| PJSD08TS-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 8.5V; 5A; unidirectional; SOD523; Ch: 1 Mounting: SMD Capacitance: 70pF Leakage current: 5µA Max. forward impulse current: 5A Number of channels: 1 Max. off-state voltage: 8V Breakdown voltage: 8.5V Application: automotive industry Case: SOD523 Type of diode: TVS Semiconductor structure: unidirectional |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||
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PJSD08W_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 10V; 1A; 0.35kW; unidirectional; SOD323; Ch: 1 Case: SOD323 Mounting: SMD Type of diode: TVS Semiconductor structure: unidirectional Capacitance: 0.15nF Leakage current: 10µA Number of channels: 1 Max. forward impulse current: 1A Max. off-state voltage: 8V Breakdown voltage: 10V Peak pulse power dissipation: 0.35kW |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
| PJSD12TS-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 13.3V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1 Mounting: SMD Capacitance: 60pF Leakage current: 5µA Max. forward impulse current: 5A Number of channels: 1 Max. off-state voltage: 12V Breakdown voltage: 13.3V Peak pulse power dissipation: 0.12kW Application: automotive industry Case: SOD523 Type of diode: TVS Semiconductor structure: unidirectional |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||
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PJSD15CW-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 18.48V; 10A; 0.35kW; bidirectional; SOD323; Ch: 1 Type of diode: TVS Breakdown voltage: 18.48V Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 15V Leakage current: 1µA Capacitance: 75pF Application: automotive industry Number of channels: 1 Max. forward impulse current: 10A |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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PJSD15CW_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 18.48V; 10A; 0.35kW; bidirectional; SOD323; Ch: 1 Type of diode: TVS Breakdown voltage: 18.48V Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 15V Leakage current: 1µA Capacitance: 75pF Number of channels: 1 Max. forward impulse current: 10A |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
| PJSD15TS-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 16.6V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1 Mounting: SMD Capacitance: 50pF Leakage current: 5µA Max. forward impulse current: 5A Number of channels: 1 Max. off-state voltage: 15V Breakdown voltage: 16.6V Peak pulse power dissipation: 0.12kW Application: automotive industry Case: SOD523 Type of diode: TVS Semiconductor structure: unidirectional |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||
| PJSD24TS-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 26.7V; 3A; 0.12kW; unidirectional; SOD523; Ch: 1 Mounting: SMD Capacitance: 25pF Leakage current: 5µA Max. forward impulse current: 3A Number of channels: 1 Max. off-state voltage: 24V Breakdown voltage: 26.7V Peak pulse power dissipation: 0.12kW Application: automotive industry Case: SOD523 Type of diode: TVS Semiconductor structure: unidirectional |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||
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PJSD24TS_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; ESD; 120W; 26.7V; unidirectional; SOD523; reel,tape Type of diode: TVS Case: SOD523 Mounting: SMD Max. off-state voltage: 24V Semiconductor structure: unidirectional Capacitance: 25pF Leakage current: 5µA Kind of package: reel; tape Breakdown voltage: 26.7V Peak pulse power dissipation: 0.12kW Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PJSD36CW-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 40.57V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.35kW Max. off-state voltage: 36V Breakdown voltage: 40.57V Max. forward impulse current: 3A Semiconductor structure: bidirectional Case: SOD323 Mounting: SMD Leakage current: 1µA Capacitance: 45pF Number of channels: 1 Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||
| PJSD36CW_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 29.4V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1 Type of diode: TVS Breakdown voltage: 29.4V Max. forward impulse current: 3A Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 36V Leakage current: 1µA Number of channels: 1 Capacitance: 45pF |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||
| PJSD36TS-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 40V; 1A; 0.12kW; unidirectional; SOD523; Ch: 1 Mounting: SMD Capacitance: 20pF Leakage current: 5µA Max. forward impulse current: 1A Number of channels: 1 Max. off-state voltage: 36V Breakdown voltage: 40V Peak pulse power dissipation: 0.12kW Application: automotive industry Case: SOD523 Type of diode: TVS Semiconductor structure: unidirectional |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||
| PJSOT24C-05-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 29.4V; 12A; 0.35kW; unidirectional; SOT23; Ch: 2 Type of diode: TVS Breakdown voltage: 29.4V Max. forward impulse current: 12A Peak pulse power dissipation: 0.35kW Semiconductor structure: unidirectional Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Leakage current: 1µA Number of channels: 2 Capacitance: 0.15nF Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
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PJT7600_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW Mounting: SMD Case: SOT363 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 1A/-700mA Gate charge: 1.6/2.2nC On-state resistance: 400/600mΩ Power dissipation: 0.35W Gate-source voltage: ±8V |
на замовлення 2685 шт: термін постачання 14-30 дні (днів) |
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PJT7603_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 50/-60V Mounting: SMD Case: SOT363 Kind of package: reel; tape Kind of transistor: complementary pair Kind of channel: enhancement Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 50/-60V Drain current: -250/400mA Gate charge: 0.95/1.1nC On-state resistance: 2.5/6Ω Power dissipation: 0.35W Gate-source voltage: ±20V |
на замовлення 2750 шт: термін постачання 14-30 дні (днів) |
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PJT7800_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 1A Pulsed drain current: 4A Power dissipation: 0.35W Case: SOT363 Gate-source voltage: ±8V On-state resistance: 0.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.6nC |
на замовлення 5968 шт: термін постачання 14-30 дні (днів) |
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PJT7801_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW Mounting: SMD Case: SOT363 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -2.8A Drain current: -0.7A Gate charge: 2.2nC On-state resistance: 0.6Ω Power dissipation: 0.35W Gate-source voltage: ±8V |
на замовлення 2845 шт: термін постачання 14-30 дні (днів) |
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PJT7808_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363 Case: SOT363 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain current: -0.25A Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET x2 Gate-source voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PJT7812_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -60V Drain current: -250mA Case: SOT363 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJT7838_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.4A Pulsed drain current: 1.2A Power dissipation: 0.35W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Gate charge: 0.95nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 7648 шт: термін постачання 14-30 дні (днів) |
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| PJUSB208_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 85V; unidirectional; SOT23-6L; Ch: 4 Mounting: SMD Case: SOT23-6L Type of diode: TVS Semiconductor structure: unidirectional Capacitance: 1pF Leakage current: 1µA Number of channels: 4 Max. off-state voltage: 70V Breakdown voltage: 85V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| PJW3P06A-AU_R2_007A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3A Case: SOT223 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJW3P06A_R2_00701 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3A Case: SOT223 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJW4N06A-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.2A Pulsed drain current: 8A Power dissipation: 2.6W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 5.1nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 42500 шт В кошику од. на суму грн. | ||||||||||||||
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PJW4N06A_R2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4A Pulsed drain current: 8A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 5.1nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 42500 шт В кошику од. на суму грн. | ||||||||||||||
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PJW4P06A-AU_R2_007A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -4A Case: SOT223 Gate-source voltage: ±20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -16A Application: automotive industry Gate charge: 10nC On-state resistance: 0.13Ω Power dissipation: 3.1W |
на замовлення 5624 шт: термін постачання 14-30 дні (днів) |
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PJW4P06A_R2_00701 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -4A Case: SOT223 Gate-source voltage: ±20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -16A Gate charge: 10nC On-state resistance: 0.13Ω Power dissipation: 3.1W |
на замовлення 55 шт: термін постачання 14-30 дні (днів) |
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PJW5P06A-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5A; Idm: -20A; 1W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5A Case: SOT223 Gate-source voltage: ±20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -20A Application: automotive industry Gate charge: 17nC On-state resistance: 85mΩ Power dissipation: 1W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PJW5P06A_R2_00701 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5A; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5A Case: SOT223 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJW7N06A-AU_R2_007A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223 Case: SOT223 Mounting: SMD Polarisation: unipolar Drain current: 6.6A Kind of channel: enhancement Drain-source voltage: 60V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: 20V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PJW7N06A_R2_00701 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223 Case: SOT223 Mounting: SMD Polarisation: unipolar Drain current: 6.6A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: 20V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PJX138K_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.35A Pulsed drain current: 1.2A Power dissipation: 223mW Case: SOT563 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1nC |
на замовлення 3722 шт: термін постачання 14-30 дні (днів) |
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PJX8603_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 50/-60V Drain current: 360/-200mA Power dissipation: 0.3W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 2.5/7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 0.95/1.1nC |
на замовлення 1647 шт: термін постачання 14-30 дні (днів) |
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| PJX8812_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563 Polarisation: unipolar Kind of channel: enhancement Mounting: SMD Case: SOT563 Type of transistor: N-MOSFET x2 Drain current: 0.3A Gate-source voltage: 10V Drain-source voltage: 30V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJX8828-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563 Kind of channel: enhancement Mounting: SMD Case: SOT563 Type of transistor: N-MOSFET x2 Drain current: 0.3A Gate-source voltage: 10V Drain-source voltage: 30V Polarisation: unipolar Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJX8828_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563 Kind of channel: enhancement Mounting: SMD Case: SOT563 Type of transistor: N-MOSFET x2 Drain current: 0.3A Gate-source voltage: 10V Drain-source voltage: 30V Polarisation: unipolar Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJX8839_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Gate-source voltage: 20V Drain-source voltage: 60V Drain current: 68A Polarisation: unipolar Case: DFN5060-8 Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PM810_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 170A; M8 Case: M8 Type of bridge rectifier: single-phase Max. forward voltage: 1.05V Load current: 8A Max. forward impulse current: 170A Max. off-state voltage: 1kV Electrical mounting: SMT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PMS210_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 70A; M4 Case: M4 Max. forward voltage: 1.05V Max. off-state voltage: 1kV Electrical mounting: SMT Load current: 2A Type of bridge rectifier: single-phase Max. forward impulse current: 70A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PMS310_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 110A; M4 Case: M4 Type of bridge rectifier: single-phase Electrical mounting: SMT Max. forward voltage: 1.05V Load current: 3A Max. forward impulse current: 110A Max. off-state voltage: 1kV |
товару немає в наявності |
В кошику од. на суму грн. |
| PJQ5435E-AU_R2_006A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 47A; DFN5060-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 47A
Drain-source voltage: 30V
Gate-source voltage: 25V
Application: automotive industry
Case: DFN5060-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 47A; DFN5060-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 47A
Drain-source voltage: 30V
Gate-source voltage: 25V
Application: automotive industry
Case: DFN5060-8
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5435E_R2_00201 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 47A; DFN5060-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 47A
Drain-source voltage: 30V
Gate-source voltage: 25V
Case: DFN5060-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 47A; DFN5060-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 47A
Drain-source voltage: 30V
Gate-source voltage: 25V
Case: DFN5060-8
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5458A-AU_R2_000A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; DFN5060-8
Application: automotive industry
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 16A
Gate-source voltage: 20V
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; DFN5060-8
Application: automotive industry
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 16A
Gate-source voltage: 20V
Drain-source voltage: 60V
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5526-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 73A
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 73A
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5526_R2_00201 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 73A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 73A
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5544S6-AU_R2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 101A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 101A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 101A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 101A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5544S6V-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; DFN5060-8
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; DFN5060-8
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5546V-AU_R2_002A1 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 316A; 65W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 79A
Pulsed drain current: 316A
Power dissipation: 65W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 316A; 65W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 79A
Pulsed drain current: 316A
Power dissipation: 65W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5808-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -31A; DFN5060-8
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain current: -31A
Drain-source voltage: -30V
Gate-source voltage: 25V
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -31A; DFN5060-8
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain current: -31A
Drain-source voltage: -30V
Gate-source voltage: 25V
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJS6600_S1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 4.1A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 4.1A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJS6601-AU_S1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 4.1A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 4.1A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJS6601_S1_00001 |
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Case: SOT23-6
Gate-source voltage: ±12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4.6/5.4nC
On-state resistance: 95/190mΩ
Power dissipation: 1.25W
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Case: SOT23-6
Gate-source voltage: ±12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4.6/5.4nC
On-state resistance: 95/190mΩ
Power dissipation: 1.25W
на замовлення 2586 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 27.49 грн |
| 24+ | 17.62 грн |
| 100+ | 13.42 грн |
| 250+ | 11.94 грн |
| 500+ | 10.95 грн |
| 1000+ | 9.97 грн |
| PJS6602_S1_00001 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 5.2A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 5.2A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJS6603_S1_00001 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 4.2A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.2A
Case: SOT23-6
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 4.2A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.2A
Case: SOT23-6
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJS6604_S1_00001 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4A; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Case: SOT23-6
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4A; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Case: SOT23-6
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJS6815_S1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SOT363
Drain current: 0.36A
Gate-source voltage: 20V
Drain-source voltage: 50V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SOT363
Drain current: 0.36A
Gate-source voltage: 20V
Drain-source voltage: 50V
Polarisation: unipolar
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| PJSD03LCFN2_R1_00501 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.4V; 6A; bidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Case: DFN1006-2
Mounting: SMD
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Capacitance: 25pF
Leakage current: 2.5µA
Max. forward impulse current: 6A
Number of channels: 1
Breakdown voltage: 5.4V
Category: Protection diodes - arrays
Description: Diode: TVS; 5.4V; 6A; bidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Case: DFN1006-2
Mounting: SMD
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Capacitance: 25pF
Leakage current: 2.5µA
Max. forward impulse current: 6A
Number of channels: 1
Breakdown voltage: 5.4V
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Мінімальне замовлення: 10000 шт
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| PJSD03TS-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 4V; 5A; unidirectional; SOD523; reel,tape
Mounting: SMD
Capacitance: 0.2nF
Leakage current: 0.2mA
Max. forward impulse current: 5A
Max. off-state voltage: 3.3V
Breakdown voltage: 4V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Version: ESD
Case: SOD523
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 4V; 5A; unidirectional; SOD523; reel,tape
Mounting: SMD
Capacitance: 0.2nF
Leakage current: 0.2mA
Max. forward impulse current: 5A
Max. off-state voltage: 3.3V
Breakdown voltage: 4V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Version: ESD
Case: SOD523
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
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| PJSD03TS_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 4V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 4V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.12kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 3.3V
Leakage current: 0.2mA
Number of channels: 1
Capacitance: 0.2nF
Category: Protection diodes - arrays
Description: Diode: TVS; 4V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 4V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.12kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 3.3V
Leakage current: 0.2mA
Number of channels: 1
Capacitance: 0.2nF
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Мінімальне замовлення: 5000 шт
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| PJSD05TS-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 6V; 5A; unidirectional; SOD523; reel,tape
Mounting: SMD
Capacitance: 0.11nF
Leakage current: 5µA
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Version: ESD
Case: SOD523
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 6V; 5A; unidirectional; SOD523; reel,tape
Mounting: SMD
Capacitance: 0.11nF
Leakage current: 5µA
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Version: ESD
Case: SOD523
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
на замовлення 4548 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.42 грн |
| 47+ | 8.81 грн |
| 100+ | 6.67 грн |
| 250+ | 5.93 грн |
| 500+ | 5.52 грн |
| 1000+ | 5.35 грн |
| 2500+ | 4.94 грн |
| PJSD07TS-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 7.5V; 8.8A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Capacitance: 85pF
Leakage current: 0.15µA
Max. forward impulse current: 8.8A
Number of channels: 1
Max. off-state voltage: 7V
Breakdown voltage: 7.5V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Case: SOD523
Type of diode: TVS
Semiconductor structure: unidirectional
Category: Protection diodes - arrays
Description: Diode: TVS; 7.5V; 8.8A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Capacitance: 85pF
Leakage current: 0.15µA
Max. forward impulse current: 8.8A
Number of channels: 1
Max. off-state voltage: 7V
Breakdown voltage: 7.5V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Case: SOD523
Type of diode: TVS
Semiconductor structure: unidirectional
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Мінімальне замовлення: 5000 шт
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| PJSD08TS-AU_R1_007A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 8.5V; 5A; unidirectional; SOD523; Ch: 1
Mounting: SMD
Capacitance: 70pF
Leakage current: 5µA
Max. forward impulse current: 5A
Number of channels: 1
Max. off-state voltage: 8V
Breakdown voltage: 8.5V
Application: automotive industry
Case: SOD523
Type of diode: TVS
Semiconductor structure: unidirectional
Category: Protection diodes - arrays
Description: Diode: TVS; 8.5V; 5A; unidirectional; SOD523; Ch: 1
Mounting: SMD
Capacitance: 70pF
Leakage current: 5µA
Max. forward impulse current: 5A
Number of channels: 1
Max. off-state voltage: 8V
Breakdown voltage: 8.5V
Application: automotive industry
Case: SOD523
Type of diode: TVS
Semiconductor structure: unidirectional
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Мінімальне замовлення: 5000 шт
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| PJSD08W_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 10V; 1A; 0.35kW; unidirectional; SOD323; Ch: 1
Case: SOD323
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.15nF
Leakage current: 10µA
Number of channels: 1
Max. forward impulse current: 1A
Max. off-state voltage: 8V
Breakdown voltage: 10V
Peak pulse power dissipation: 0.35kW
Category: Protection diodes - arrays
Description: Diode: TVS; 10V; 1A; 0.35kW; unidirectional; SOD323; Ch: 1
Case: SOD323
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.15nF
Leakage current: 10µA
Number of channels: 1
Max. forward impulse current: 1A
Max. off-state voltage: 8V
Breakdown voltage: 10V
Peak pulse power dissipation: 0.35kW
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Мінімальне замовлення: 5000 шт
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| PJSD12TS-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 13.3V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Capacitance: 60pF
Leakage current: 5µA
Max. forward impulse current: 5A
Number of channels: 1
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Case: SOD523
Type of diode: TVS
Semiconductor structure: unidirectional
Category: Protection diodes - arrays
Description: Diode: TVS; 13.3V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Capacitance: 60pF
Leakage current: 5µA
Max. forward impulse current: 5A
Number of channels: 1
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Case: SOD523
Type of diode: TVS
Semiconductor structure: unidirectional
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Мінімальне замовлення: 5000 шт
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| PJSD15CW-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 18.48V; 10A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 18.48V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 15V
Leakage current: 1µA
Capacitance: 75pF
Application: automotive industry
Number of channels: 1
Max. forward impulse current: 10A
Category: Protection diodes - arrays
Description: Diode: TVS; 18.48V; 10A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 18.48V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 15V
Leakage current: 1µA
Capacitance: 75pF
Application: automotive industry
Number of channels: 1
Max. forward impulse current: 10A
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Мінімальне замовлення: 5000 шт
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| PJSD15CW_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 18.48V; 10A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 18.48V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 15V
Leakage current: 1µA
Capacitance: 75pF
Number of channels: 1
Max. forward impulse current: 10A
Category: Protection diodes - arrays
Description: Diode: TVS; 18.48V; 10A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 18.48V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 15V
Leakage current: 1µA
Capacitance: 75pF
Number of channels: 1
Max. forward impulse current: 10A
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Мінімальне замовлення: 5000 шт
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| PJSD15TS-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 16.6V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Capacitance: 50pF
Leakage current: 5µA
Max. forward impulse current: 5A
Number of channels: 1
Max. off-state voltage: 15V
Breakdown voltage: 16.6V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Case: SOD523
Type of diode: TVS
Semiconductor structure: unidirectional
Category: Protection diodes - arrays
Description: Diode: TVS; 16.6V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Capacitance: 50pF
Leakage current: 5µA
Max. forward impulse current: 5A
Number of channels: 1
Max. off-state voltage: 15V
Breakdown voltage: 16.6V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Case: SOD523
Type of diode: TVS
Semiconductor structure: unidirectional
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Мінімальне замовлення: 5000 шт
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| PJSD24TS-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 26.7V; 3A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Capacitance: 25pF
Leakage current: 5µA
Max. forward impulse current: 3A
Number of channels: 1
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Case: SOD523
Type of diode: TVS
Semiconductor structure: unidirectional
Category: Protection diodes - arrays
Description: Diode: TVS; 26.7V; 3A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Capacitance: 25pF
Leakage current: 5µA
Max. forward impulse current: 3A
Number of channels: 1
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Case: SOD523
Type of diode: TVS
Semiconductor structure: unidirectional
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Мінімальне замовлення: 5000 шт
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| PJSD24TS_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 26.7V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Kind of package: reel; tape
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.12kW
Version: ESD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 26.7V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Kind of package: reel; tape
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.12kW
Version: ESD
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| PJSD36CW-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 40.57V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 36V
Breakdown voltage: 40.57V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Capacitance: 45pF
Number of channels: 1
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; 40.57V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 36V
Breakdown voltage: 40.57V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Capacitance: 45pF
Number of channels: 1
Application: automotive industry
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Мінімальне замовлення: 5000 шт
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| PJSD36CW_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 29.4V
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 36V
Leakage current: 1µA
Number of channels: 1
Capacitance: 45pF
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 29.4V
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 36V
Leakage current: 1µA
Number of channels: 1
Capacitance: 45pF
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Мінімальне замовлення: 5000 шт
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| PJSD36TS-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Capacitance: 20pF
Leakage current: 5µA
Max. forward impulse current: 1A
Number of channels: 1
Max. off-state voltage: 36V
Breakdown voltage: 40V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Case: SOD523
Type of diode: TVS
Semiconductor structure: unidirectional
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Capacitance: 20pF
Leakage current: 5µA
Max. forward impulse current: 1A
Number of channels: 1
Max. off-state voltage: 36V
Breakdown voltage: 40V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Case: SOD523
Type of diode: TVS
Semiconductor structure: unidirectional
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Мінімальне замовлення: 5000 шт
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| PJSOT24C-05-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 12A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 29.4V
Max. forward impulse current: 12A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 2
Capacitance: 0.15nF
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 12A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 29.4V
Max. forward impulse current: 12A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 2
Capacitance: 0.15nF
Application: automotive industry
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Мінімальне замовлення: 3000 шт
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| PJT7600_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1A/-700mA
Gate charge: 1.6/2.2nC
On-state resistance: 400/600mΩ
Power dissipation: 0.35W
Gate-source voltage: ±8V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1A/-700mA
Gate charge: 1.6/2.2nC
On-state resistance: 400/600mΩ
Power dissipation: 0.35W
Gate-source voltage: ±8V
на замовлення 2685 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 31.93 грн |
| 23+ | 18.28 грн |
| 100+ | 11.53 грн |
| 500+ | 8.73 грн |
| 1000+ | 7.74 грн |
| PJT7603_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 50/-60V
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: -250/400mA
Gate charge: 0.95/1.1nC
On-state resistance: 2.5/6Ω
Power dissipation: 0.35W
Gate-source voltage: ±20V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 50/-60V
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: -250/400mA
Gate charge: 0.95/1.1nC
On-state resistance: 2.5/6Ω
Power dissipation: 0.35W
Gate-source voltage: ±20V
на замовлення 2750 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 18.63 грн |
| 35+ | 11.78 грн |
| 100+ | 6.49 грн |
| 500+ | 4.97 грн |
| 1000+ | 4.63 грн |
| PJT7800_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.6nC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.6nC
на замовлення 5968 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.76 грн |
| 60+ | 6.92 грн |
| 100+ | 6.34 грн |
| 250+ | 6.09 грн |
| 500+ | 5.77 грн |
| 1000+ | 5.27 грн |
| 3000+ | 5.19 грн |
| PJT7801_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -2.8A
Drain current: -0.7A
Gate charge: 2.2nC
On-state resistance: 0.6Ω
Power dissipation: 0.35W
Gate-source voltage: ±8V
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -2.8A
Drain current: -0.7A
Gate charge: 2.2nC
On-state resistance: 0.6Ω
Power dissipation: 0.35W
Gate-source voltage: ±8V
на замовлення 2845 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 35.48 грн |
| 26+ | 15.90 грн |
| 58+ | 7.17 грн |
| 100+ | 6.42 грн |
| 250+ | 5.93 грн |
| 500+ | 5.44 грн |
| 1000+ | 5.11 грн |
| PJT7808_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -0.25A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET x2
Gate-source voltage: 20V
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -0.25A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET x2
Gate-source voltage: 20V
товару немає в наявності
В кошику
од. на суму грн.
| PJT7812_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -250mA
Case: SOT363
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -250mA
Case: SOT363
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJT7838_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.4A
Pulsed drain current: 1.2A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.4A
Pulsed drain current: 1.2A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 7648 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.64 грн |
| 53+ | 7.82 грн |
| 100+ | 7.25 грн |
| 500+ | 6.92 грн |
| 1000+ | 6.51 грн |
| 3000+ | 5.85 грн |
| PJUSB208_R1_00001 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 85V; unidirectional; SOT23-6L; Ch: 4
Mounting: SMD
Case: SOT23-6L
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 1pF
Leakage current: 1µA
Number of channels: 4
Max. off-state voltage: 70V
Breakdown voltage: 85V
Category: Protection diodes - arrays
Description: Diode: TVS; 85V; unidirectional; SOT23-6L; Ch: 4
Mounting: SMD
Case: SOT23-6L
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 1pF
Leakage current: 1µA
Number of channels: 4
Max. off-state voltage: 70V
Breakdown voltage: 85V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PJW3P06A-AU_R2_007A1 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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В кошику
од. на суму грн.
| PJW3P06A_R2_00701 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| PJW4N06A-AU_R2_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 42500 шт
В кошику
од. на суму грн.
| PJW4N06A_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 42500 шт
В кошику
од. на суму грн.
| PJW4P06A-AU_R2_007A1 |
|
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -16A
Application: automotive industry
Gate charge: 10nC
On-state resistance: 0.13Ω
Power dissipation: 3.1W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -16A
Application: automotive industry
Gate charge: 10nC
On-state resistance: 0.13Ω
Power dissipation: 3.1W
на замовлення 5624 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 46.12 грн |
| 15+ | 28.25 грн |
| 100+ | 18.04 грн |
| 250+ | 15.15 грн |
| 500+ | 13.51 грн |
| 1000+ | 12.52 грн |
| PJW4P06A_R2_00701 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -16A
Gate charge: 10nC
On-state resistance: 0.13Ω
Power dissipation: 3.1W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -16A
Gate charge: 10nC
On-state resistance: 0.13Ω
Power dissipation: 3.1W
на замовлення 55 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 46.12 грн |
| 15+ | 28.74 грн |
| PJW5P06A-AU_R2_000A1 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5A; Idm: -20A; 1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
Application: automotive industry
Gate charge: 17nC
On-state resistance: 85mΩ
Power dissipation: 1W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5A; Idm: -20A; 1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
Application: automotive industry
Gate charge: 17nC
On-state resistance: 85mΩ
Power dissipation: 1W
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| PJW5P06A_R2_00701 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| PJW7N06A-AU_R2_007A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Case: SOT223
Mounting: SMD
Polarisation: unipolar
Drain current: 6.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Case: SOT223
Mounting: SMD
Polarisation: unipolar
Drain current: 6.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
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од. на суму грн.
| PJW7N06A_R2_00701 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Case: SOT223
Mounting: SMD
Polarisation: unipolar
Drain current: 6.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Case: SOT223
Mounting: SMD
Polarisation: unipolar
Drain current: 6.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
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од. на суму грн.
| PJX138K_R1_00001 |
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1nC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1nC
на замовлення 3722 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 15.96 грн |
| 48+ | 8.65 грн |
| 83+ | 5.01 грн |
| 100+ | 4.50 грн |
| 250+ | 4.27 грн |
| 500+ | 4.25 грн |
| PJX8603_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.95/1.1nC
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.95/1.1nC
на замовлення 1647 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.17 грн |
| 33+ | 12.60 грн |
| 100+ | 8.81 грн |
| 500+ | 7.08 грн |
| 1000+ | 6.51 грн |
| PJX8812_R1_00001 |
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Kind of package: reel; tape
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| PJX8828-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
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| PJX8828_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Polarisation: unipolar
Kind of package: reel; tape
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| PJX8839_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate-source voltage: 20V
Drain-source voltage: 60V
Drain current: 68A
Polarisation: unipolar
Case: DFN5060-8
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate-source voltage: 20V
Drain-source voltage: 60V
Drain current: 68A
Polarisation: unipolar
Case: DFN5060-8
Kind of channel: enhancement
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| PM810_R2_00601 |
|
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 170A; M8
Case: M8
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 8A
Max. forward impulse current: 170A
Max. off-state voltage: 1kV
Electrical mounting: SMT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 170A; M8
Case: M8
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 8A
Max. forward impulse current: 170A
Max. off-state voltage: 1kV
Electrical mounting: SMT
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| PMS210_R2_00601 |
|
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 70A; M4
Case: M4
Max. forward voltage: 1.05V
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 2A
Type of bridge rectifier: single-phase
Max. forward impulse current: 70A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 70A; M4
Case: M4
Max. forward voltage: 1.05V
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 2A
Type of bridge rectifier: single-phase
Max. forward impulse current: 70A
товару немає в наявності
В кошику
од. на суму грн.
| PMS310_R2_00601 |
|
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 110A; M4
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 3A
Max. forward impulse current: 110A
Max. off-state voltage: 1kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 110A; M4
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 3A
Max. forward impulse current: 110A
Max. off-state voltage: 1kV
товару немає в наявності
В кошику
од. на суму грн.