Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13020) > Сторінка 101 з 217
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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TLP292-4(V4GBTRE | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 3.75KV TRANS SO16 Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 3879 шт: термін постачання 21-31 дні (днів) |
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TLP292-4(V4LATPE | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 3.75KV TRANS SO16 Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 500µA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 500µA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 2698 шт: термін постачання 21-31 дні (днів) |
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TLP292-4(V4LATRE | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 3.75KV TRANS SO16 Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 500µA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 500µA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 4078 шт: термін постачання 21-31 дні (днів) |
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TLP292-4(V4-TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 3.75KV TRANS SO16 Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 9256 шт: термін постачання 21-31 дні (днів) |
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TLP292-4(V4-TR,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 3.75KV TRANS SO16 Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 3998 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(4LGBTPE | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 3.75KV TRANS SO16 Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 500µA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 500µA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(4LGBTRE | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 3.75KV TRANS SO16 Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 500µA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 500µA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 3043 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(GB-TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 3.75KV TRANS SO16 Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 844 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(LA-TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 3.75KV TRANS SO16 Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 500µA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 500µA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 8857 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(LA-TR,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 3.75KV TRANS SO16 Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 500µA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 500µA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 2622 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(LGBTP,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 3.75KV TRANS SO16 Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 500µA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 500µA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 14269 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(LGBTR,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 3.75KV TRANS SO16 Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 500µA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 500µA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 2982 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(MBGBTPE | Toshiba Semiconductor and Storage | Description: OPTOISOLATOR 3.75KV TRANS SO16 |
на замовлення 9305 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(MBHATLE | Toshiba Semiconductor and Storage | Description: OPTOISOLATOR 3.75KV TRANS SO16 |
на замовлення 5026 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 3.75KV TRANS SO16 Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 276 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(TPR,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 3.75KV TRANS SO16 Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 3710 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(V4GBTPE | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 3.75KV TRANS SO16 Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 13988 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(V4GBTRE | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 3.75KV TRANS SO16 Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(V4LATPE | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 3.75KV TRANS SO16 Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 500µA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 500µA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 5980 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(V4LATRE | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 3.75KV TRANS SO16 Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 500µA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 500µA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(V4-TP,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 3.75KV TRANS SO16 Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 1967 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(V4-TR,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 3.75KV TRANS SO16 Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
на замовлення 5465 шт: термін постачання 21-31 дні (днів) |
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TLP293-4(MBHATLE | Toshiba Semiconductor and Storage | Description: OPTOISOLATOR 3.75KV TRANS SO16 |
на замовлення 5026 шт: термін постачання 21-31 дні (днів) |
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TH58NVG3S0HTAI0 | Toshiba Semiconductor and Storage | Description: IC EEPROM 8GBIT 25NS 48TSOP |
на замовлення 89 шт: термін постачання 21-31 дні (днів) |
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TB62781FNG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC LED DRIVER LINEAR 40MA 20SSOP Packaging: Tape & Reel (TR) Package / Case: 20-LSSOP (0.173", 4.40mm Width) Voltage - Output: 28V Mounting Type: Surface Mount Number of Outputs: 9 Type: Linear Operating Temperature: -40°C ~ 85°C (TA) Current - Output / Channel: 40mA Internal Switch(s): Yes Supplier Device Package: 20-SSOP Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TJ20A10M3(STA4,Q,M | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 100V 20A TO220SIS-3 |
товар відсутній |
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TJ9A10M3,S4Q(M | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 100V 9A TO220SIS-3 |
товар відсутній |
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TJ11A10M3,S5Q(M | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 100V 11A TO220SIS-3 |
товар відсутній |
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TB2941HQ(O) | Toshiba Semiconductor and Storage | Description: IC AMP BTL AUDIO 4CH |
на замовлення 846 шт: термін постачання 21-31 дні (днів) |
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TB62781FNG,C8,EL | Toshiba Semiconductor and Storage |
Description: IC LED DRIVER LINEAR 40MA 20SSOP Packaging: Cut Tape (CT) Package / Case: 20-LSSOP (0.173", 4.40mm Width) Voltage - Output: 28V Mounting Type: Surface Mount Number of Outputs: 9 Type: Linear Operating Temperature: -40°C ~ 85°C (TA) Current - Output / Channel: 40mA Internal Switch(s): Yes Supplier Device Package: 20-SSOP Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V |
на замовлення 5625 шт: термін постачання 21-31 дні (днів) |
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1SS427,L3M | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 80V 100MA SOD923 Packaging: Tape & Reel (TR) Package / Case: SOD-923 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.6 ns Technology: Standard Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: SOD-923 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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CBS10S30,L3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 20V 1A CST2B |
товар відсутній |
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CBS10S40,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 1A CST2B Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 120pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: CST2B Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 150 µA @ 40 V |
товар відсутній |
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DF2B12M2SC,L3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 8VWM 18VC SC2 |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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SSM3K15ACT,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 100MA CST3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: CST3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SSM6K403TU,LF | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 20V 4.2A UF6 |
товар відсутній |
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T2N7002AK,LM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 200MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V |
на замовлення 555000 шт: термін постачання 21-31 дні (днів) |
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TC4W53FU,LF | Toshiba Semiconductor and Storage |
Description: IC MUX/DEMUX DUAL 1X1 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 160Ohm Supplier Device Package: 8-SSOP Voltage - Supply, Single (V+): 3V ~ 18V Part Status: Active Number of Channels: 2 |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
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TCR5AM10,LF | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 1V 500MA 5DFNB |
товар відсутній |
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1SS427,L3M | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 80V 100MA SOD923 Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.6 ns Technology: Standard Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: SOD-923 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 41730 шт: термін постачання 21-31 дні (днів) |
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CBS10S30,L3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 20V 1A CST2B |
товар відсутній |
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CBS10S40,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 1A CST2B Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 120pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: CST2B Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 150 µA @ 40 V |
товар відсутній |
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DF2B12M2SC,L3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 8VWM 18VC SC2 |
на замовлення 9850 шт: термін постачання 21-31 дні (днів) |
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SSM3K15ACT,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 100MA CST3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: CST3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V |
на замовлення 24410 шт: термін постачання 21-31 дні (днів) |
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SSM6K403TU,LF | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 20V 4.2A UF6 |
на замовлення 13 шт: термін постачання 21-31 дні (днів) |
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SSM6K411TU(TE85L,F | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 20V 10A |
на замовлення 5509 шт: термін постачання 21-31 дні (днів) |
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T2N7002AK,LM | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 200MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V |
на замовлення 555369 шт: термін постачання 21-31 дні (днів) |
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TC4W53FU,LF | Toshiba Semiconductor and Storage |
Description: IC MUX/DEMUX DUAL 1X1 8SOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 160Ohm Supplier Device Package: 8-SSOP Voltage - Supply, Single (V+): 3V ~ 18V Part Status: Active Number of Channels: 2 |
на замовлення 51467 шт: термін постачання 21-31 дні (днів) |
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TCR5AM10,LF | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 1V 500MA 5DFNB |
товар відсутній |
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DF2B12M2SC,L3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 8VWM 18VC SC2 |
на замовлення 9850 шт: термін постачання 21-31 дні (днів) |
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SSM6K411TU(TE85L,F | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 20V 10A |
на замовлення 5509 шт: термін постачання 21-31 дні (днів) |
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SSM6K411TU(TE85L,F | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 20V 10A |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TPH1R712MD,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 60A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 4.5V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 10 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TPN4R712MD,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 36A 8TSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 18A, 4.5V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: 8-TSON Advance (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TPH1R712MD,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 60A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 4.5V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 10 V |
на замовлення 11633 шт: термін постачання 21-31 дні (днів) |
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TPN4R712MD,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 36A 8TSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 18A, 4.5V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: 8-TSON Advance (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V |
на замовлення 7072 шт: термін постачання 21-31 дні (днів) |
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TL1L4-DW0,L4A5B | Toshiba Semiconductor and Storage | Description: POWER LED WHT 6500K 3535 |
товар відсутній |
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TL1L4-NT0,L4A5B | Toshiba Semiconductor and Storage | Description: POWER LED WHT 5700K 3535 |
товар відсутній |
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TL1L4-NW0,L4A5B | Toshiba Semiconductor and Storage | Description: POWER LED WHT 5000K 3535 |
товар відсутній |
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TL1L4-WH0,L4A5B | Toshiba Semiconductor and Storage | Description: POWER LED WHT 4000K 3535 |
товар відсутній |
TLP292-4(V4GBTRE |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 3879 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 117.42 грн |
10+ | 71.17 грн |
100+ | 52.66 грн |
500+ | 45.41 грн |
1000+ | 37.4 грн |
TLP292-4(V4LATPE |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 2698 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 117.42 грн |
10+ | 71.17 грн |
100+ | 52.66 грн |
500+ | 45.41 грн |
1000+ | 37.4 грн |
TLP292-4(V4LATRE |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 4078 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 117.42 грн |
10+ | 71.17 грн |
100+ | 52.66 грн |
500+ | 45.41 грн |
1000+ | 37.4 грн |
TLP292-4(V4-TP,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 9256 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 117.42 грн |
10+ | 71.17 грн |
100+ | 52.66 грн |
500+ | 45.41 грн |
1000+ | 37.4 грн |
TLP292-4(V4-TR,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 3998 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 117.42 грн |
10+ | 71.17 грн |
100+ | 52.66 грн |
500+ | 45.41 грн |
1000+ | 37.4 грн |
TLP293-4(4LGBTPE |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 106.61 грн |
10+ | 64.72 грн |
TLP293-4(4LGBTRE |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 3043 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 106.61 грн |
10+ | 64.72 грн |
100+ | 47.87 грн |
500+ | 41.29 грн |
1000+ | 34 грн |
TLP293-4(GB-TP,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 844 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 106.61 грн |
10+ | 64.72 грн |
100+ | 47.87 грн |
500+ | 41.29 грн |
TLP293-4(LA-TP,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 8857 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 106.61 грн |
10+ | 64.72 грн |
100+ | 47.87 грн |
500+ | 41.29 грн |
1000+ | 34 грн |
TLP293-4(LA-TR,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 2622 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 106.61 грн |
10+ | 64.72 грн |
100+ | 47.87 грн |
500+ | 41.29 грн |
1000+ | 34 грн |
TLP293-4(LGBTP,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 14269 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 106.61 грн |
10+ | 64.72 грн |
100+ | 47.87 грн |
500+ | 41.29 грн |
1000+ | 34 грн |
TLP293-4(LGBTR,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 2982 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 106.61 грн |
10+ | 64.72 грн |
100+ | 47.87 грн |
500+ | 41.29 грн |
1000+ | 34 грн |
TLP293-4(MBGBTPE |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS SO16
Description: OPTOISOLATOR 3.75KV TRANS SO16
на замовлення 9305 шт:
термін постачання 21-31 дні (днів)TLP293-4(MBHATLE |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS SO16
Description: OPTOISOLATOR 3.75KV TRANS SO16
на замовлення 5026 шт:
термін постачання 21-31 дні (днів)TLP293-4(TP,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 276 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 106.61 грн |
10+ | 64.72 грн |
100+ | 47.87 грн |
TLP293-4(TPR,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 3710 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 106.61 грн |
10+ | 64.72 грн |
100+ | 47.87 грн |
500+ | 41.29 грн |
1000+ | 34 грн |
TLP293-4(V4GBTPE |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 13988 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 106.61 грн |
10+ | 64.72 грн |
100+ | 47.87 грн |
500+ | 41.29 грн |
1000+ | 34 грн |
TLP293-4(V4GBTRE |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 106.61 грн |
10+ | 64.72 грн |
100+ | 47.87 грн |
500+ | 41.29 грн |
1000+ | 34 грн |
TLP293-4(V4LATPE |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 5980 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 106.61 грн |
10+ | 64.72 грн |
100+ | 47.87 грн |
500+ | 41.29 грн |
1000+ | 34 грн |
TLP293-4(V4LATRE |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 500µA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 106.61 грн |
10+ | 64.72 грн |
100+ | 47.87 грн |
500+ | 41.29 грн |
1000+ | 34 грн |
TLP293-4(V4-TP,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 1967 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 106.61 грн |
10+ | 64.72 грн |
100+ | 47.87 грн |
500+ | 41.29 грн |
1000+ | 34 грн |
TLP293-4(V4-TR,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 3.75KV TRANS SO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
на замовлення 5465 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 106.61 грн |
10+ | 64.72 грн |
100+ | 47.87 грн |
500+ | 41.29 грн |
1000+ | 34 грн |
TLP293-4(MBHATLE |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 3.75KV TRANS SO16
Description: OPTOISOLATOR 3.75KV TRANS SO16
на замовлення 5026 шт:
термін постачання 21-31 дні (днів)TH58NVG3S0HTAI0 |
Виробник: Toshiba Semiconductor and Storage
Description: IC EEPROM 8GBIT 25NS 48TSOP
Description: IC EEPROM 8GBIT 25NS 48TSOP
на замовлення 89 шт:
термін постачання 21-31 дні (днів)TB62781FNG,C8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC LED DRIVER LINEAR 40MA 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-LSSOP (0.173", 4.40mm Width)
Voltage - Output: 28V
Mounting Type: Surface Mount
Number of Outputs: 9
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Supplier Device Package: 20-SSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Description: IC LED DRIVER LINEAR 40MA 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-LSSOP (0.173", 4.40mm Width)
Voltage - Output: 28V
Mounting Type: Surface Mount
Number of Outputs: 9
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Supplier Device Package: 20-SSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2000+ | 58.95 грн |
TJ20A10M3(STA4,Q,M |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 100V 20A TO220SIS-3
Description: MOSFET P-CH 100V 20A TO220SIS-3
товар відсутній
TJ9A10M3,S4Q(M |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 100V 9A TO220SIS-3
Description: MOSFET P-CH 100V 9A TO220SIS-3
товар відсутній
TJ11A10M3,S5Q(M |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 100V 11A TO220SIS-3
Description: MOSFET P-CH 100V 11A TO220SIS-3
товар відсутній
TB2941HQ(O) |
Виробник: Toshiba Semiconductor and Storage
Description: IC AMP BTL AUDIO 4CH
Description: IC AMP BTL AUDIO 4CH
на замовлення 846 шт:
термін постачання 21-31 дні (днів)TB62781FNG,C8,EL |
Виробник: Toshiba Semiconductor and Storage
Description: IC LED DRIVER LINEAR 40MA 20SSOP
Packaging: Cut Tape (CT)
Package / Case: 20-LSSOP (0.173", 4.40mm Width)
Voltage - Output: 28V
Mounting Type: Surface Mount
Number of Outputs: 9
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Supplier Device Package: 20-SSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Description: IC LED DRIVER LINEAR 40MA 20SSOP
Packaging: Cut Tape (CT)
Package / Case: 20-LSSOP (0.173", 4.40mm Width)
Voltage - Output: 28V
Mounting Type: Surface Mount
Number of Outputs: 9
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Supplier Device Package: 20-SSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
на замовлення 5625 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 128.94 грн |
10+ | 111.47 грн |
25+ | 105.13 грн |
100+ | 84.06 грн |
250+ | 78.93 грн |
500+ | 69.06 грн |
1000+ | 56.28 грн |
1SS427,L3M |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 80V 100MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE GEN PURP 80V 100MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 2.36 грн |
CBS10S30,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 1A CST2B
Description: DIODE SCHOTTKY 20V 1A CST2B
товар відсутній
CBS10S40,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A CST2B
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: CST2B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A CST2B
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: CST2B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
товар відсутній
DF2B12M2SC,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 8VWM 18VC SC2
Description: TVS DIODE 8VWM 18VC SC2
на замовлення 10 шт:
термін постачання 21-31 дні (днів)SSM3K15ACT,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
Description: MOSFET N-CH 30V 100MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 2.86 грн |
SSM6K403TU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 4.2A UF6
Description: MOSFET N-CH 20V 4.2A UF6
товар відсутній
T2N7002AK,LM |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
Description: MOSFET N-CH 60V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
на замовлення 555000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 1.67 грн |
6000+ | 1.52 грн |
9000+ | 1.29 грн |
30000+ | 1.12 грн |
75000+ | 0.97 грн |
150000+ | 0.81 грн |
TC4W53FU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX DUAL 1X1 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
Supplier Device Package: 8-SSOP
Voltage - Supply, Single (V+): 3V ~ 18V
Part Status: Active
Number of Channels: 2
Description: IC MUX/DEMUX DUAL 1X1 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
Supplier Device Package: 8-SSOP
Voltage - Supply, Single (V+): 3V ~ 18V
Part Status: Active
Number of Channels: 2
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 8.31 грн |
6000+ | 7.52 грн |
15000+ | 7.04 грн |
30000+ | 6.06 грн |
TCR5AM10,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1V 500MA 5DFNB
Description: IC REG LINEAR 1V 500MA 5DFNB
товар відсутній
1SS427,L3M |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 80V 100MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE GEN PURP 80V 100MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 41730 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
16+ | 18.01 грн |
20+ | 14.36 грн |
100+ | 7.62 грн |
500+ | 4.7 грн |
1000+ | 3.2 грн |
2000+ | 2.89 грн |
5000+ | 2.47 грн |
CBS10S30,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 1A CST2B
Description: DIODE SCHOTTKY 20V 1A CST2B
товар відсутній
CBS10S40,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A CST2B
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: CST2B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A CST2B
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: CST2B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
товар відсутній
DF2B12M2SC,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 8VWM 18VC SC2
Description: TVS DIODE 8VWM 18VC SC2
на замовлення 9850 шт:
термін постачання 21-31 дні (днів)SSM3K15ACT,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
Description: MOSFET N-CH 30V 100MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
на замовлення 24410 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 21.61 грн |
19+ | 14.64 грн |
100+ | 7.12 грн |
500+ | 5.57 грн |
1000+ | 3.87 грн |
2000+ | 3.35 грн |
5000+ | 3.06 грн |
SSM6K403TU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 4.2A UF6
Description: MOSFET N-CH 20V 4.2A UF6
на замовлення 13 шт:
термін постачання 21-31 дні (днів)SSM6K411TU(TE85L,F |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 10A
Description: MOSFET N-CH 20V 10A
на замовлення 5509 шт:
термін постачання 21-31 дні (днів)T2N7002AK,LM |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
Description: MOSFET N-CH 60V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
на замовлення 555369 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
29+ | 10.09 грн |
43+ | 6.59 грн |
100+ | 3.56 грн |
500+ | 2.62 грн |
1000+ | 1.82 грн |
TC4W53FU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX DUAL 1X1 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
Supplier Device Package: 8-SSOP
Voltage - Supply, Single (V+): 3V ~ 18V
Part Status: Active
Number of Channels: 2
Description: IC MUX/DEMUX DUAL 1X1 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
Supplier Device Package: 8-SSOP
Voltage - Supply, Single (V+): 3V ~ 18V
Part Status: Active
Number of Channels: 2
на замовлення 51467 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 29.53 грн |
13+ | 22.82 грн |
25+ | 20.87 грн |
100+ | 14.57 грн |
250+ | 13.2 грн |
500+ | 10.93 грн |
1000+ | 8.06 грн |
TCR5AM10,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1V 500MA 5DFNB
Description: IC REG LINEAR 1V 500MA 5DFNB
товар відсутній
DF2B12M2SC,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 8VWM 18VC SC2
Description: TVS DIODE 8VWM 18VC SC2
на замовлення 9850 шт:
термін постачання 21-31 дні (днів)SSM6K411TU(TE85L,F |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 10A
Description: MOSFET N-CH 20V 10A
на замовлення 5509 шт:
термін постачання 21-31 дні (днів)SSM6K411TU(TE85L,F |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 10A
Description: MOSFET N-CH 20V 10A
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)TPH1R712MD,L1Q |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 4.5V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 10 V
Description: MOSFET P-CH 20V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 4.5V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 10 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 37.47 грн |
TPN4R712MD,L1Q |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 36A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 18A, 4.5V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V
Description: MOSFET P-CH 20V 36A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 18A, 4.5V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 19.25 грн |
TPH1R712MD,L1Q |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 60A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 4.5V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 10 V
Description: MOSFET P-CH 20V 60A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 4.5V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 10 V
на замовлення 11633 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 95.09 грн |
10+ | 74.92 грн |
100+ | 58.28 грн |
500+ | 46.36 грн |
1000+ | 37.77 грн |
2000+ | 35.55 грн |
TPN4R712MD,L1Q |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 36A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 18A, 4.5V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V
Description: MOSFET P-CH 20V 36A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 18A, 4.5V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V
на замовлення 7072 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 53.31 грн |
10+ | 44.67 грн |
100+ | 30.9 грн |
500+ | 24.23 грн |
1000+ | 20.62 грн |
2000+ | 18.37 грн |
TL1L4-DW0,L4A5B |
Виробник: Toshiba Semiconductor and Storage
Description: POWER LED WHT 6500K 3535
Description: POWER LED WHT 6500K 3535
товар відсутній
TL1L4-NT0,L4A5B |
Виробник: Toshiba Semiconductor and Storage
Description: POWER LED WHT 5700K 3535
Description: POWER LED WHT 5700K 3535
товар відсутній
TL1L4-NW0,L4A5B |
Виробник: Toshiba Semiconductor and Storage
Description: POWER LED WHT 5000K 3535
Description: POWER LED WHT 5000K 3535
товар відсутній
TL1L4-WH0,L4A5B |
Виробник: Toshiba Semiconductor and Storage
Description: POWER LED WHT 4000K 3535
Description: POWER LED WHT 4000K 3535
товар відсутній