Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13019) > Сторінка 104 з 217
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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TCR2LF10,LM(CT | Toshiba Semiconductor and Storage | Description: IC REG LDO 1V 0.2A SMV |
на замовлення 5740 шт: термін постачання 21-31 дні (днів) |
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TCR2LF12,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.2V 200MA SMV Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 1.2V Control Features: Enable Part Status: Active Voltage Dropout (Max): 1.25V @ 150mA Protection Features: Over Current |
на замовлення 1623 шт: термін постачання 21-31 дні (днів) |
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TCR2LF25,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.5V 200MA SMV Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Voltage Dropout (Max): 0.38V @ 150mA Protection Features: Over Current |
на замовлення 3003 шт: термін постачання 21-31 дні (днів) |
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TCR2LF27,LM(CT | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 2.7V 200MA SMV |
товар відсутній |
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TCR2LF32,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.2V 200MA SMV Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 3.2V Control Features: Enable Part Status: Active Voltage Dropout (Max): 0.3V @ 150mA Protection Features: Over Current |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TCR2LF33,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.3V 200MA SMV Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active Voltage Dropout (Max): 0.3V @ 150mA Protection Features: Over Current |
на замовлення 220963 шт: термін постачання 21-31 дні (днів) |
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TCR2LF36,LM(CT | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 3.6V 200MA SMV |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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TCR5AM055,LF | Toshiba Semiconductor and Storage | Description: IC REG LDO 0.55V 0.5A 5DFN |
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TCR5AM06,LF | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 0.6V 500MA 5DFNB |
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TCR5AM065,LF | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 0.65V 500MA 5DFNB |
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TCR5AM07,LF | Toshiba Semiconductor and Storage | Description: IC REG LDO 0.7V 0.5A 5DFN |
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TCR5AM075,LF | Toshiba Semiconductor and Storage | Description: IC REG LDO 0.75V 0.5A 5DFN |
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TCR5AM08,LF | Toshiba Semiconductor and Storage | Description: IC REG LDO 0.8V 0.5A 5DFN |
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TCR5AM085,LF | Toshiba Semiconductor and Storage | Description: IC REG LDO 0.85V 0.5A 5DFN |
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TCR5AM09,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 0.9V 500MA 5DFNB Packaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 55 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 5-DFNB (1.2x1.2) Voltage - Output (Min/Fixed): 0.9V Control Features: Enable PSRR: 70dB ~ 40dB (1kHz ~ 10Hz) Voltage Dropout (Max): 0.23V @ 500mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) Current - Supply (Max): 68 µA |
на замовлення 4099 шт: термін постачання 21-31 дні (днів) |
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TCR5AM095,LF | Toshiba Semiconductor and Storage | Description: IC REG LDO 0.95V 0.5A 5DFN |
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TCR5AM105,LF | Toshiba Semiconductor and Storage | Description: IC REG LDO 1.05V 0.5A 5DFN |
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TC75W55FU,LF | Toshiba Semiconductor and Storage | Description: IC OPAMP GP 160KHZ SM8-8 |
на замовлення 2989 шт: термін постачання 21-31 дні (днів) |
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TCK302G,LF | Toshiba Semiconductor and Storage | Description: IC POWER DIST LOAD SWITCH 9WCSP |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TCR2LE10,LM(CT | Toshiba Semiconductor and Storage | Description: IC REG LDO 1V 0.2A ESV |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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TCR2LE27,LM(CT | Toshiba Semiconductor and Storage | Description: IC REG LDO 2.7V 0.2A ESV |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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TCR2LE36,LM(CT | Toshiba Semiconductor and Storage | Description: IC REG LDO 3.6V 0.2A ESV |
на замовлення 7990 шт: термін постачання 21-31 дні (днів) |
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TCR2LF10,LM(CT | Toshiba Semiconductor and Storage | Description: IC REG LDO 1V 0.2A SMV |
на замовлення 5740 шт: термін постачання 21-31 дні (днів) |
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TCR2LF27,LM(CT | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 2.7V 200MA SMV |
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RN1110,LF(CT | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.1W SSM |
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DF2B5M4SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.6VWM 24VC SL2 Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 3.6V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 4V Voltage - Clamping (Max) @ Ipp: 24V Power - Peak Pulse: 30W Power Line Protection: No |
на замовлення 80000 шт: термін постачання 21-31 дні (днів) |
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DF2B6M4SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 25VC SL2 Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 25V Power - Peak Pulse: 30W Power Line Protection: No |
товар відсутній |
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DF2B7M3SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 20VC SL2 Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.1pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 50W Power Line Protection: No |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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DF2S5.1ASL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 1.5VWM SL2 Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 45pF @ 1MHz Voltage - Reverse Standoff (Typ): 1.5V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 4.8V Power Line Protection: No |
товар відсутній |
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DF2S5.6ASL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.5VWM SL2 Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 40pF @ 1MHz Voltage - Reverse Standoff (Typ): 3.5V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.3V Power Line Protection: No |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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DF2S6.2ASL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM SL2-2 Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 32pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Power Line Protection: No Part Status: Active |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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DF2S6.8ASL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM SL2-2 Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 25pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Power Line Protection: No Part Status: Active |
на замовлення 19900 шт: термін постачання 21-31 дні (днів) |
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DF2S8.2ASL,L3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 6.55VWM SL2-2 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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DF2B5M4SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.6VWM 24VC SL2 Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 3.6V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 4V Voltage - Clamping (Max) @ Ipp: 24V Power - Peak Pulse: 30W Power Line Protection: No |
на замовлення 80055 шт: термін постачання 21-31 дні (днів) |
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DF2B6M4SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 25VC SL2 Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 25V Power - Peak Pulse: 30W Power Line Protection: No |
на замовлення 12882 шт: термін постачання 21-31 дні (днів) |
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DF2B7M3SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 20VC SL2 Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.1pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 50W Power Line Protection: No |
на замовлення 40659 шт: термін постачання 21-31 дні (днів) |
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DF2S5.1ASL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 1.5VWM SL2 Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 45pF @ 1MHz Voltage - Reverse Standoff (Typ): 1.5V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 4.8V Power Line Protection: No |
на замовлення 2475 шт: термін постачання 21-31 дні (днів) |
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DF2S5.6ASL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.5VWM SL2 Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 40pF @ 1MHz Voltage - Reverse Standoff (Typ): 3.5V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.3V Power Line Protection: No |
на замовлення 38256 шт: термін постачання 21-31 дні (днів) |
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DF2S6.2ASL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM SL2-2 Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 32pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Power Line Protection: No Part Status: Active |
на замовлення 79615 шт: термін постачання 21-31 дні (днів) |
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DF2S6.8ASL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM SL2-2 Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 25pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Power Line Protection: No Part Status: Active |
на замовлення 27644 шт: термін постачання 21-31 дні (днів) |
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DF2S8.2ASL,L3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 6.55VWM SL2-2 |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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DF2S8.2ASL,L3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 6.55VWM SL2-2 |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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TMPM333FWFG(C,J) | Toshiba Semiconductor and Storage | Description: IC MCU 32BIT 128KB FLASH 100LQFP |
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TMPM333FYFG(C) | Toshiba Semiconductor and Storage |
Description: IC MCU 32BIT 256KB FLASH 100LQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 256KB (256K x 8) RAM Size: 16K x 8 Operating Temperature: -20°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 12x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V Connectivity: I²C, SIO, UART/USART Peripherals: POR, WDT Supplier Device Package: 100-LQFP (14x14) Part Status: Active Number of I/O: 78 DigiKey Programmable: Not Verified |
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TMPM380FYFG(C) | Toshiba Semiconductor and Storage | Description: IC MCU 32BIT 256KB FLASH 100LQFP |
на замовлення 360 шт: термін постачання 21-31 дні (днів) |
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DF10G5M4N,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.6VWM 24VC 10DFN Packaging: Tape & Reel (TR) Package / Case: 10-UFDFN Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 3.6V (Max) Supplier Device Package: 10-DFN (2.5x1) Bidirectional Channels: 4 Voltage - Breakdown (Min): 4V Voltage - Clamping (Max) @ Ipp: 24V Power - Peak Pulse: 30W Power Line Protection: No |
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DF10G6M4N,LF | Toshiba Semiconductor and Storage | Description: TVS DIODE 5.5V 25V 10DFN |
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DF10G5M4N,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.6VWM 24VC 10DFN Packaging: Cut Tape (CT) Package / Case: 10-UFDFN Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 3.6V (Max) Supplier Device Package: 10-DFN (2.5x1) Bidirectional Channels: 4 Voltage - Breakdown (Min): 4V Voltage - Clamping (Max) @ Ipp: 24V Power - Peak Pulse: 30W Power Line Protection: No |
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DF10G6M4N,LF | Toshiba Semiconductor and Storage | Description: TVS DIODE 5.5V 25V 10DFN |
на замовлення 1254 шт: термін постачання 21-31 дні (днів) |
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TC7WH125FE,LJ(CT | Toshiba Semiconductor and Storage | Description: IC BUS BUFFER DUAL NONINV 8SSOP |
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SSM6J507NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 10A 6UDFNB Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 6-UDFNB (2x2) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +20V, -25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V |
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SSM6J507NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 10A 6UDFNB Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 6-UDFNB (2x2) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +20V, -25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V |
на замовлення 2758 шт: термін постачання 21-31 дні (днів) |
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TPH2R608NH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 75V 150A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V Power Dissipation (Max): 142W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 37.5 V |
на замовлення 117473 шт: термін постачання 21-31 дні (днів) |
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TPH2900ENH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 200V 33A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 16.5A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V |
на замовлення 15173 шт: термін постачання 21-31 дні (днів) |
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TK8P60W5,RVQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 8A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 560mOhm @ 4A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 400µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V |
на замовлення 15673 шт: термін постачання 21-31 дні (днів) |
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TK9P65W,RQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 650V 9.3A DPAK |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TK14G65W,RQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 13.7A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 6.9A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 690µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V |
на замовлення 3525 шт: термін постачання 21-31 дні (днів) |
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TK14G65W5,RQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 13.7A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 690µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V |
товар відсутній |
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TK20V60W5,LVQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 20A 4DFN Packaging: Cut Tape (CT) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: 4-DFN-EP (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V |
на замовлення 4812 шт: термін постачання 21-31 дні (днів) |
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TK6P65W,RQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 5.8A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 180µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V |
на замовлення 1246 шт: термін постачання 21-31 дні (днів) |
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TCR2LF10,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 1V 0.2A SMV
Description: IC REG LDO 1V 0.2A SMV
на замовлення 5740 шт:
термін постачання 21-31 дні (днів)TCR2LF12,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.2V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.25V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 1.2V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.25V @ 150mA
Protection Features: Over Current
на замовлення 1623 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 27.73 грн |
14+ | 19.72 грн |
25+ | 17.28 грн |
100+ | 10.49 грн |
250+ | 8.69 грн |
500+ | 6.95 грн |
1000+ | 5.24 грн |
TCR2LF25,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.5V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Voltage Dropout (Max): 0.38V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 2.5V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Voltage Dropout (Max): 0.38V @ 150mA
Protection Features: Over Current
на замовлення 3003 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.59 грн |
15+ | 18.35 грн |
25+ | 16.07 грн |
100+ | 9.76 грн |
250+ | 8.08 грн |
500+ | 6.46 грн |
1000+ | 4.87 грн |
TCR2LF27,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.7V 200MA SMV
Description: IC REG LINEAR 2.7V 200MA SMV
товар відсутній
TCR2LF32,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.2V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.2V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.3V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 3.2V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.2V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.3V @ 150mA
Protection Features: Over Current
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 27.01 грн |
TCR2LF33,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.3V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 3.3V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.3V @ 150mA
Protection Features: Over Current
на замовлення 220963 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 24.88 грн |
16+ | 17.87 грн |
25+ | 15.66 грн |
100+ | 9.5 грн |
250+ | 7.86 грн |
500+ | 6.29 грн |
1000+ | 4.74 грн |
TCR2LF36,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.6V 200MA SMV
Description: IC REG LINEAR 3.6V 200MA SMV
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)TCR5AM055,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 0.55V 0.5A 5DFN
Description: IC REG LDO 0.55V 0.5A 5DFN
товар відсутній
TCR5AM06,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.6V 500MA 5DFNB
Description: IC REG LINEAR 0.6V 500MA 5DFNB
товар відсутній
TCR5AM065,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.65V 500MA 5DFNB
Description: IC REG LINEAR 0.65V 500MA 5DFNB
товар відсутній
TCR5AM07,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 0.7V 0.5A 5DFN
Description: IC REG LDO 0.7V 0.5A 5DFN
товар відсутній
TCR5AM075,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 0.75V 0.5A 5DFN
Description: IC REG LDO 0.75V 0.5A 5DFN
товар відсутній
TCR5AM08,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 0.8V 0.5A 5DFN
Description: IC REG LDO 0.8V 0.5A 5DFN
товар відсутній
TCR5AM085,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 0.85V 0.5A 5DFN
Description: IC REG LDO 0.85V 0.5A 5DFN
товар відсутній
TCR5AM09,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.9V 500MA 5DFNB
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 55 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
PSRR: 70dB ~ 40dB (1kHz ~ 10Hz)
Voltage Dropout (Max): 0.23V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 68 µA
Description: IC REG LINEAR 0.9V 500MA 5DFNB
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 55 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
PSRR: 70dB ~ 40dB (1kHz ~ 10Hz)
Voltage Dropout (Max): 0.23V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 68 µA
на замовлення 4099 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 28.44 грн |
12+ | 23.34 грн |
25+ | 21.77 грн |
100+ | 16.35 грн |
250+ | 15.18 грн |
500+ | 12.85 грн |
1000+ | 9.76 грн |
2500+ | 8.9 грн |
TCR5AM095,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 0.95V 0.5A 5DFN
Description: IC REG LDO 0.95V 0.5A 5DFN
товар відсутній
TCR5AM105,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 1.05V 0.5A 5DFN
Description: IC REG LDO 1.05V 0.5A 5DFN
товар відсутній
TC75W55FU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 160KHZ SM8-8
Description: IC OPAMP GP 160KHZ SM8-8
на замовлення 2989 шт:
термін постачання 21-31 дні (днів)TCK302G,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 9WCSP
Description: IC POWER DIST LOAD SWITCH 9WCSP
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)TCR2LE10,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 1V 0.2A ESV
Description: IC REG LDO 1V 0.2A ESV
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)TCR2LE27,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 2.7V 0.2A ESV
Description: IC REG LDO 2.7V 0.2A ESV
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)TCR2LE36,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 3.6V 0.2A ESV
Description: IC REG LDO 3.6V 0.2A ESV
на замовлення 7990 шт:
термін постачання 21-31 дні (днів)TCR2LF10,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 1V 0.2A SMV
Description: IC REG LDO 1V 0.2A SMV
на замовлення 5740 шт:
термін постачання 21-31 дні (днів)TCR2LF27,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.7V 200MA SMV
Description: IC REG LINEAR 2.7V 200MA SMV
товар відсутній
RN1110,LF(CT |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W SSM
Description: TRANS PREBIAS NPN 0.1W SSM
товар відсутній
DF2B5M4SL,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 24VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 3.6VWM 24VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 30W
Power Line Protection: No
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 3.18 грн |
30000+ | 3.01 грн |
50000+ | 2.49 грн |
DF2B6M4SL,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 25VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 25VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 30W
Power Line Protection: No
товар відсутній
DF2B7M3SL,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 20VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 50W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 20VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 50W
Power Line Protection: No
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 3.15 грн |
30000+ | 2.98 грн |
DF2S5.1ASL,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 1.5VWM SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 1.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.8V
Power Line Protection: No
Description: TVS DIODE 1.5VWM SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 1.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.8V
Power Line Protection: No
товар відсутній
DF2S5.6ASL,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Description: TVS DIODE 3.5VWM SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 1.67 грн |
DF2S6.2ASL,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SL2-2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM SL2-2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 1.72 грн |
30000+ | 1.54 грн |
50000+ | 1.33 грн |
DF2S6.8ASL,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SL2-2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM SL2-2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
Part Status: Active
на замовлення 19900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 1.69 грн |
DF2S8.2ASL,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 6.55VWM SL2-2
Description: TVS DIODE 6.55VWM SL2-2
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)DF2B5M4SL,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 24VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 3.6VWM 24VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 30W
Power Line Protection: No
на замовлення 80055 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 21.33 грн |
19+ | 14.44 грн |
100+ | 7.28 грн |
500+ | 5.57 грн |
1000+ | 4.13 грн |
2000+ | 3.48 грн |
5000+ | 3.27 грн |
DF2B6M4SL,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 25VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 25VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 30W
Power Line Protection: No
на замовлення 12882 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 21.33 грн |
20+ | 14.24 грн |
100+ | 7.2 грн |
500+ | 5.51 грн |
1000+ | 4.09 грн |
2000+ | 3.44 грн |
5000+ | 3.24 грн |
DF2B7M3SL,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 20VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 50W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 20VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 50W
Power Line Protection: No
на замовлення 40659 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 21.33 грн |
20+ | 14.31 грн |
100+ | 7.21 грн |
500+ | 5.52 грн |
1000+ | 4.1 грн |
2000+ | 3.45 грн |
5000+ | 3.24 грн |
DF2S5.1ASL,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 1.5VWM SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 1.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.8V
Power Line Protection: No
Description: TVS DIODE 1.5VWM SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 1.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.8V
Power Line Protection: No
на замовлення 2475 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
23+ | 12.8 грн |
32+ | 8.56 грн |
100+ | 4.18 грн |
500+ | 3.27 грн |
1000+ | 2.27 грн |
2000+ | 1.97 грн |
DF2S5.6ASL,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Description: TVS DIODE 3.5VWM SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
на замовлення 38256 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
23+ | 12.8 грн |
32+ | 8.56 грн |
100+ | 4.18 грн |
500+ | 3.27 грн |
1000+ | 2.27 грн |
2000+ | 1.97 грн |
5000+ | 1.8 грн |
DF2S6.2ASL,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SL2-2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM SL2-2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
на замовлення 79615 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
23+ | 12.8 грн |
33+ | 8.49 грн |
100+ | 4.57 грн |
500+ | 3.37 грн |
1000+ | 2.34 грн |
2000+ | 1.94 грн |
5000+ | 1.8 грн |
DF2S6.8ASL,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SL2-2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM SL2-2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
Part Status: Active
на замовлення 27644 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
23+ | 12.8 грн |
32+ | 8.69 грн |
100+ | 4.22 грн |
500+ | 3.3 грн |
1000+ | 2.29 грн |
2000+ | 1.99 грн |
5000+ | 1.81 грн |
DF2S8.2ASL,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 6.55VWM SL2-2
Description: TVS DIODE 6.55VWM SL2-2
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)DF2S8.2ASL,L3F |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 6.55VWM SL2-2
Description: TVS DIODE 6.55VWM SL2-2
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)TMPM333FWFG(C,J) |
Виробник: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 128KB FLASH 100LQFP
Description: IC MCU 32BIT 128KB FLASH 100LQFP
товар відсутній
TMPM333FYFG(C) |
Виробник: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -20°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I²C, SIO, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -20°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I²C, SIO, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
товар відсутній
TMPM380FYFG(C) |
Виробник: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 256KB FLASH 100LQFP
Description: IC MCU 32BIT 256KB FLASH 100LQFP
на замовлення 360 шт:
термін постачання 21-31 дні (днів)DF10G5M4N,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 24VC 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: 10-DFN (2.5x1)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 3.6VWM 24VC 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: 10-DFN (2.5x1)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 30W
Power Line Protection: No
товар відсутній
DF10G6M4N,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5V 25V 10DFN
Description: TVS DIODE 5.5V 25V 10DFN
товар відсутній
DF10G5M4N,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 24VC 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: 10-DFN (2.5x1)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 3.6VWM 24VC 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: 10-DFN (2.5x1)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 30W
Power Line Protection: No
товар відсутній
DF10G6M4N,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5V 25V 10DFN
Description: TVS DIODE 5.5V 25V 10DFN
на замовлення 1254 шт:
термін постачання 21-31 дні (днів)TC7WH125FE,LJ(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS BUFFER DUAL NONINV 8SSOP
Description: IC BUS BUFFER DUAL NONINV 8SSOP
товар відсутній
SSM6J507NU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 10A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-UDFNB (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
Description: MOSFET P-CH 30V 10A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-UDFNB (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
товар відсутній
SSM6J507NU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 10A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-UDFNB (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
Description: MOSFET P-CH 30V 10A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-UDFNB (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
на замовлення 2758 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 28.44 грн |
12+ | 23.62 грн |
100+ | 16.43 грн |
500+ | 12.04 грн |
1000+ | 9.79 грн |
TPH2R608NH,L1Q |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 75V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 37.5 V
Description: MOSFET N-CH 75V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 37.5 V
на замовлення 117473 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 96.68 грн |
10+ | 75.85 грн |
100+ | 58.99 грн |
500+ | 46.93 грн |
1000+ | 38.23 грн |
2000+ | 35.99 грн |
TPH2900ENH,L1Q |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 200V 33A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 16.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
Description: MOSFET N-CH 200V 33A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 16.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
на замовлення 15173 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 162.8 грн |
10+ | 130.48 грн |
100+ | 103.84 грн |
500+ | 82.45 грн |
1000+ | 69.96 грн |
2000+ | 66.46 грн |
TK8P60W5,RVQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 560mOhm @ 4A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
Description: MOSFET N-CH 600V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 560mOhm @ 4A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
на замовлення 15673 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 113.03 грн |
10+ | 97.55 грн |
100+ | 78.39 грн |
500+ | 60.44 грн |
1000+ | 50.08 грн |
TK9P65W,RQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 9.3A DPAK
Description: MOSFET N-CH 650V 9.3A DPAK
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)TK14G65W,RQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13.7A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
Description: MOSFET N-CH 650V 13.7A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
на замовлення 3525 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 152.84 грн |
10+ | 122.33 грн |
100+ | 97.35 грн |
500+ | 77.31 грн |
TK14G65W5,RQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13.7A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
Description: MOSFET N-CH 650V 13.7A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
товар відсутній
TK20V60W5,LVQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Description: MOSFET N-CH 600V 20A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
на замовлення 4812 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 192.66 грн |
10+ | 155.54 грн |
100+ | 125.84 грн |
500+ | 104.97 грн |
1000+ | 89.88 грн |
TK6P65W,RQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 5.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
Description: MOSFET N-CH 650V 5.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
на замовлення 1246 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 99.53 грн |
10+ | 85.64 грн |
100+ | 66.79 грн |
500+ | 51.78 грн |
1000+ | 40.88 грн |