Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13538) > Сторінка 104 з 226
| Фото | Назва | Виробник | Інформація |
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DF2S16FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 12VWM SOD923Packaging: Tape & Reel (TR) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 10pF @ 1MHz Voltage - Reverse Standoff (Typ): 12V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.3V Power Line Protection: No |
на замовлення 50000 шт: термін постачання 21-31 дні (днів) |
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DF2S20CT,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 15VWM CST2Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 9pF @ 1MHz Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: CST2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 18.8V Power Line Protection: No Part Status: Active |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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DF2S20FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 15VWM SOD923Packaging: Tape & Reel (TR) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 9pF @ 1MHz Voltage - Reverse Standoff (Typ): 15V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 18.8V Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DF2S24FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 19VWM SOD923Packaging: Tape & Reel (TR) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 8.5pF @ 1MHz Voltage - Reverse Standoff (Typ): 19V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Power Line Protection: No |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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DF2S30CT,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 23VWM CST2Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 7.2pF @ 1MHz Voltage - Reverse Standoff (Typ): 23V Supplier Device Package: CST2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 28V Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DF2S30FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 23VWM SOD923Packaging: Tape & Reel (TR) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 7pF @ 1MHz Voltage - Reverse Standoff (Typ): 23V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 28V Power Line Protection: No |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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DF2S5.1FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 1.5VWM SOD923Packaging: Tape & Reel (TR) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 45pF @ 1MHz Voltage - Reverse Standoff (Typ): 1.5V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 4.8V Power Line Protection: No |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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DF2S5.6CT,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.5VWM CST2Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 40pF @ 1MHz Voltage - Reverse Standoff (Typ): 3.5V Supplier Device Package: CST2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.3V Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DF2S5.6FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.5VWM SOD923Packaging: Tape & Reel (TR) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 40pF @ 1MHz Voltage - Reverse Standoff (Typ): 3.5V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.3V Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DF2S6.2CT,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM CST2Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 32pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: CST2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Power Line Protection: No Part Status: Active |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
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DF2S7MSL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 20VC SL2Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 60W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DF3D18FU,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 12VWM 33VC USMPackaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Capacitance @ Frequency: 9pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: USM Bidirectional Channels: 2 Voltage - Breakdown (Min): 16.2V Voltage - Clamping (Max) @ Ipp: 33V Power - Peak Pulse: 80W Power Line Protection: No |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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DF3D29FU,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 24VWM 47VC |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DF6F6.8MTU,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 24VC UF6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Type: Steering (Rail to Rail) Applications: General Purpose Capacitance @ Frequency: 0.6pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: UF6 Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 24V Power Line Protection: Yes |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSM3J338R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 12V 6A SOT23FPackaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 17.6mOhm @ 6A, 8V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
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SSM3J356R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 2A SOT-23FPackaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V |
на замовлення 66000 шт: термін постачання 21-31 дні (днів) |
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SSM3K56ACT,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 1.4A CST3Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: CST3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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SSM3K56MFV,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 800MA VESMPackaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: VESM Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V |
на замовлення 88000 шт: термін постачання 21-31 дні (днів) |
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SSM3K72CTC,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 150MA CST3CPackaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: CST3C Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSM6J512NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 12V 10A 6UDFNBPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 16.2mOhm @ 4A, 8V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-UDFNB (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSM6K504NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 9A 6UDFNBPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 4A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 6-UDFNB (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSM6N7002KFU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 60V 0.3A US6Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 285mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: US6 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1SS302A,LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA SC70Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SC-70 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 5851 шт: термін постачання 21-31 дні (днів) |
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1SS307E,L3F | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 80V 100MA SC79Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Capacitance @ Vr, F: 6pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: SC-79 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA Current - Reverse Leakage @ Vr: 10 nA @ 80 V |
на замовлення 53844 шт: термін постачання 21-31 дні (днів) |
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1SS413CT,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 20V 50MA CST2Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz Current - Average Rectified (Io): 50mA Supplier Device Package: CST2 Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA Current - Reverse Leakage @ Vr: 500 nA @ 20 V |
на замовлення 8751 шт: термін постачання 21-31 дні (днів) |
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DF2B18FU,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 12VWM 33VC USCPackaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Capacitance @ Frequency: 9pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: USC Bidirectional Channels: 1 Voltage - Breakdown (Min): 16.2V Voltage - Clamping (Max) @ Ipp: 33V Power - Peak Pulse: 80W Power Line Protection: No |
на замовлення 17995 шт: термін постачання 21-31 дні (днів) |
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DF2B29FU,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 24VWM 47VC USCPackaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Capacitance @ Frequency: 9pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: USC Bidirectional Channels: 1 Voltage - Breakdown (Min): 26V Voltage - Clamping (Max) @ Ipp: 47V Power - Peak Pulse: 140W Power Line Protection: No |
на замовлення 16465 шт: термін постачання 21-31 дні (днів) |
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DF2S10FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 8VWM FSCPackaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 16pF @ 1MHz Voltage - Reverse Standoff (Typ): 8V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 9.4V Power Line Protection: No |
на замовлення 19469 шт: термін постачання 21-31 дні (днів) |
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DF2S12FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 9VWM 18.5VC SOD923Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 15pF @ 1MHz Voltage - Reverse Standoff (Typ): 9V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 11.4V Voltage - Clamping (Max) @ Ipp: 18.5V Power Line Protection: No |
на замовлення 17684 шт: термін постачання 21-31 дні (днів) |
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DF2S16FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 12VWM SOD923Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 10pF @ 1MHz Voltage - Reverse Standoff (Typ): 12V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.3V Power Line Protection: No |
на замовлення 50981 шт: термін постачання 21-31 дні (днів) |
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DF2S20CT,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 15VWM CST2Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 9pF @ 1MHz Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: CST2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 18.8V Power Line Protection: No Part Status: Active |
на замовлення 14415 шт: термін постачання 21-31 дні (днів) |
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DF2S20FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 15VWM SOD923Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 9pF @ 1MHz Voltage - Reverse Standoff (Typ): 15V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 18.8V Power Line Protection: No |
на замовлення 4004 шт: термін постачання 21-31 дні (днів) |
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DF2S24FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 19VWM SOD923Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 8.5pF @ 1MHz Voltage - Reverse Standoff (Typ): 19V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Power Line Protection: No |
на замовлення 27694 шт: термін постачання 21-31 дні (днів) |
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DF2S30CT,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 23VWM CST2Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 7.2pF @ 1MHz Voltage - Reverse Standoff (Typ): 23V Supplier Device Package: CST2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 28V Power Line Protection: No Part Status: Active |
на замовлення 9010 шт: термін постачання 21-31 дні (днів) |
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DF2S30FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 23VWM SOD923Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 7pF @ 1MHz Voltage - Reverse Standoff (Typ): 23V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 28V Power Line Protection: No |
на замовлення 44513 шт: термін постачання 21-31 дні (днів) |
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DF2S5.1FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 1.5VWM SOD923Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 45pF @ 1MHz Voltage - Reverse Standoff (Typ): 1.5V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 4.8V Power Line Protection: No |
на замовлення 22655 шт: термін постачання 21-31 дні (днів) |
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DF2S5.6FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.5VWM SOD923Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 40pF @ 1MHz Voltage - Reverse Standoff (Typ): 3.5V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.3V Power Line Protection: No |
на замовлення 1592 шт: термін постачання 21-31 дні (днів) |
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DF2S6.2CT,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM CST2Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 32pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: CST2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Power Line Protection: No Part Status: Active |
на замовлення 98942 шт: термін постачання 21-31 дні (днів) |
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DF2S7MSL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 20VC SL2Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 60W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DF3D18FU,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 12VWM 33VC USMPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Capacitance @ Frequency: 9pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: USM Bidirectional Channels: 2 Voltage - Breakdown (Min): 16.2V Voltage - Clamping (Max) @ Ipp: 33V Power - Peak Pulse: 80W Power Line Protection: No |
на замовлення 23670 шт: термін постачання 21-31 дні (днів) |
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DF3D29FU,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 24VWM 47VC |
на замовлення 5914 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DF3D6.8MS,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 11VC SSMPackaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Applications: General Purpose Capacitance @ Frequency: 0.5pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SSM Unidirectional Channels: 2 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 11V (Typ) Power Line Protection: Yes |
на замовлення 18897 шт: термін постачання 21-31 дні (днів) |
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DF6F6.8MTU,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM 24VC UF6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Type: Steering (Rail to Rail) Applications: General Purpose Capacitance @ Frequency: 0.6pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: UF6 Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 24V Power Line Protection: Yes |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSM3J338R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 12V 6A SOT23FPackaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 17.6mOhm @ 6A, 8V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V |
на замовлення 91911 шт: термін постачання 21-31 дні (днів) |
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SSM3J356R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 2A SOT-23FPackaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V |
на замовлення 68602 шт: термін постачання 21-31 дні (днів) |
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SSM3K56ACT,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 1.4A CST3Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: CST3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V |
на замовлення 46468 шт: термін постачання 21-31 дні (днів) |
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SSM3K56MFV,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 800MA VESMPackaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: VESM Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V |
на замовлення 89800 шт: термін постачання 21-31 дні (днів) |
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SSM3K72CTC,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 150MA CST3CPackaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: CST3C Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V |
на замовлення 7139 шт: термін постачання 21-31 дні (днів) |
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SSM6J512NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 12V 10A 6UDFNBPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 16.2mOhm @ 4A, 8V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-UDFNB (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V |
на замовлення 2561 шт: термін постачання 21-31 дні (днів) |
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SSM6K504NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 9A 6UDFNBPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 4A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 6-UDFNB (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V |
на замовлення 2727 шт: термін постачання 21-31 дні (днів) |
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SSM6N7002KFU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 60V 0.3A US6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 285mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: US6 Part Status: Active |
на замовлення 2059 шт: термін постачання 21-31 дні (днів) |
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DF3D29FU,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 24VWM 47VC |
на замовлення 5914 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TLP3906(TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOPPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Photovoltaic Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Current - Output / Channel: 12µA Voltage - Isolation: 3750Vrms Supplier Device Package: 6-SOP Voltage - Output (Max): 7V Turn On / Turn Off Time (Typ): 200µs, 300µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 30 mA |
на замовлення 75000 шт: термін постачання 21-31 дні (днів) |
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TLP3906(TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOPPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Photovoltaic Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Current - Output / Channel: 12µA Voltage - Isolation: 3750Vrms Supplier Device Package: 6-SOP Voltage - Output (Max): 7V Turn On / Turn Off Time (Typ): 200µs, 300µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 30 mA |
на замовлення 77523 шт: термін постачання 21-31 дні (днів) |
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TPH1R204PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 150A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V Power Dissipation (Max): 960mW (Ta), 132W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TPH1R005PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 45V 150A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 1.04mOhm @ 50A, 10V Power Dissipation (Max): 960mW (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 22.5 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TPH1R204PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 150A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V Power Dissipation (Max): 960mW (Ta), 132W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V |
на замовлення 71 шт: термін постачання 21-31 дні (днів) |
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TPH1R005PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 45V 150A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 1.04mOhm @ 50A, 10V Power Dissipation (Max): 960mW (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 22.5 V |
на замовлення 6247 шт: термін постачання 21-31 дні (днів) |
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74LCX157FT(AJ) | Toshiba Semiconductor and Storage |
Description: IC MULTIPLEXER QUAD 2-CH 16TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74VHC393FT | Toshiba Semiconductor and Storage |
Description: IC BIN COUNTER DL 4BIT 14TSSOPPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Binary Counter Reset: Asynchronous Operating Temperature: -40°C ~ 125°C Direction: Up Trigger Type: Negative Edge Supplier Device Package: 14-TSSOP Part Status: Active Voltage - Supply: 2 V ~ 5.5 V Count Rate: 115 MHz Number of Bits per Element: 4 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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| DF2S16FS,L3M |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Power Line Protection: No
Description: TVS DIODE 12VWM SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Power Line Protection: No
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 1.83 грн |
| 20000+ | 1.58 грн |
| 30000+ | 1.49 грн |
| 50000+ | 1.31 грн |
| DF2S20CT,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 15VWM CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 9pF @ 1MHz
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 15VWM CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 9pF @ 1MHz
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Power Line Protection: No
Part Status: Active
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 1.84 грн |
| DF2S20FS,L3M |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 15VWM SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 9pF @ 1MHz
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Power Line Protection: No
Description: TVS DIODE 15VWM SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 9pF @ 1MHz
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| DF2S24FS,L3M |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 19V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Power Line Protection: No
Description: TVS DIODE 19VWM SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 19V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Power Line Protection: No
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 1.83 грн |
| 20000+ | 1.58 грн |
| DF2S30CT,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 23VWM CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 7.2pF @ 1MHz
Voltage - Reverse Standoff (Typ): 23V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 23VWM CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 7.2pF @ 1MHz
Voltage - Reverse Standoff (Typ): 23V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| DF2S30FS,L3M |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 23VWM SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Power Line Protection: No
Description: TVS DIODE 23VWM SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Power Line Protection: No
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 1.83 грн |
| 20000+ | 1.58 грн |
| 30000+ | 1.49 грн |
| DF2S5.1FS,L3M |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 1.5VWM SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 1.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.8V
Power Line Protection: No
Description: TVS DIODE 1.5VWM SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 1.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.8V
Power Line Protection: No
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 1.83 грн |
| 20000+ | 1.58 грн |
| DF2S5.6CT,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.5VWM CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| DF2S5.6FS,L3M |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Description: TVS DIODE 3.5VWM SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| DF2S6.2CT,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 1.96 грн |
| 20000+ | 1.70 грн |
| 30000+ | 1.60 грн |
| 50000+ | 1.40 грн |
| 70000+ | 1.34 грн |
| DF2S7MSL,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 20VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 60W
Power Line Protection: No
Description: TVS DIODE 5VWM 20VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 60W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| DF3D18FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM 33VC USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: USM
Bidirectional Channels: 2
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 80W
Power Line Protection: No
Description: TVS DIODE 12VWM 33VC USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: USM
Bidirectional Channels: 2
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 80W
Power Line Protection: No
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.95 грн |
| 6000+ | 5.69 грн |
| DF3D29FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 47VC
Description: TVS DIODE 24VWM 47VC
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DF6F6.8MTU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 24VC UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: UF6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 24V
Power Line Protection: Yes
Description: TVS DIODE 5VWM 24VC UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: UF6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 24V
Power Line Protection: Yes
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од. на суму грн.
| SSM3J338R,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 6A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
Description: MOSFET P-CH 12V 6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 6A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.74 грн |
| 6000+ | 6.77 грн |
| 9000+ | 6.43 грн |
| 15000+ | 5.66 грн |
| 21000+ | 5.45 грн |
| 30000+ | 5.23 грн |
| SSM3J356R,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 2A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
Description: MOSFET P-CH 60V 2A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.47 грн |
| 6000+ | 5.64 грн |
| 9000+ | 5.34 грн |
| 15000+ | 4.70 грн |
| 21000+ | 4.51 грн |
| 30000+ | 4.33 грн |
| SSM3K56ACT,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 1.4A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
Description: MOSFET N-CH 20V 1.4A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 4.48 грн |
| 20000+ | 3.95 грн |
| 30000+ | 3.76 грн |
| SSM3K56MFV,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 800MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
Description: MOSFET N-CH 20V 800MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
на замовлення 88000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 4.85 грн |
| 16000+ | 4.27 грн |
| 24000+ | 4.06 грн |
| 40000+ | 3.59 грн |
| 56000+ | 3.46 грн |
| 80000+ | 3.33 грн |
| SSM3K72CTC,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 150MA CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: CST3C
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
Description: MOSFET N-CH 60V 150MA CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: CST3C
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
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| SSM6J512NU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 10A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 4A, 8V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
Description: MOSFET P-CH 12V 10A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 4A, 8V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
товару немає в наявності
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од. на суму грн.
| SSM6K504NU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 9A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V
Description: MOSFET N-CH 30V 9A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V
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од. на суму грн.
| SSM6N7002KFU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.3A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Part Status: Active
Description: MOSFET 2N-CH 60V 0.3A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| 1SS302A,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 5851 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 37+ | 8.55 грн |
| 51+ | 5.91 грн |
| 100+ | 3.93 грн |
| 500+ | 2.80 грн |
| 1000+ | 2.50 грн |
| 1SS307E,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 80V 100MA SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-79
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
Description: DIODE GEN PURP 80V 100MA SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-79
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
на замовлення 53844 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 7.77 грн |
| 60+ | 5.01 грн |
| 100+ | 3.34 грн |
| 500+ | 2.38 грн |
| 1000+ | 2.12 грн |
| 2000+ | 1.90 грн |
| 1SS413CT,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 50MA CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: CST2
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
Description: DIODE SCHOTTKY 20V 50MA CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: CST2
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
на замовлення 8751 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 17.09 грн |
| 30+ | 10.18 грн |
| 100+ | 6.33 грн |
| 500+ | 4.35 грн |
| 1000+ | 3.84 грн |
| 2000+ | 3.41 грн |
| 5000+ | 2.89 грн |
| DF2B18FU,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM 33VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 80W
Power Line Protection: No
Description: TVS DIODE 12VWM 33VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 80W
Power Line Protection: No
на замовлення 17995 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 15.54 грн |
| 31+ | 9.88 грн |
| 100+ | 5.08 грн |
| 500+ | 4.54 грн |
| 1000+ | 4.31 грн |
| DF2B29FU,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 47VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26V
Voltage - Clamping (Max) @ Ipp: 47V
Power - Peak Pulse: 140W
Power Line Protection: No
Description: TVS DIODE 24VWM 47VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26V
Voltage - Clamping (Max) @ Ipp: 47V
Power - Peak Pulse: 140W
Power Line Protection: No
на замовлення 16465 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 15.54 грн |
| 30+ | 10.10 грн |
| 100+ | 4.85 грн |
| 500+ | 4.49 грн |
| 1000+ | 4.42 грн |
| DF2S10FS,L3M |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 8VWM FSC
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 16pF @ 1MHz
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.4V
Power Line Protection: No
Description: TVS DIODE 8VWM FSC
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 16pF @ 1MHz
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.4V
Power Line Protection: No
на замовлення 19469 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 7.77 грн |
| 61+ | 4.94 грн |
| 121+ | 2.49 грн |
| 500+ | 2.11 грн |
| 1000+ | 1.87 грн |
| 2000+ | 1.77 грн |
| 5000+ | 1.64 грн |
| DF2S12FS,L3M |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 9VWM 18.5VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Voltage - Reverse Standoff (Typ): 9V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 18.5V
Power Line Protection: No
Description: TVS DIODE 9VWM 18.5VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Voltage - Reverse Standoff (Typ): 9V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 18.5V
Power Line Protection: No
на замовлення 17684 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 11.66 грн |
| 45+ | 6.73 грн |
| 100+ | 4.12 грн |
| 500+ | 2.80 грн |
| 1000+ | 2.46 грн |
| 2000+ | 2.17 грн |
| 5000+ | 1.82 грн |
| DF2S16FS,L3M |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Power Line Protection: No
Description: TVS DIODE 12VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Power Line Protection: No
на замовлення 50981 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 11.66 грн |
| 45+ | 6.73 грн |
| 100+ | 4.12 грн |
| 500+ | 2.80 грн |
| 1000+ | 2.46 грн |
| 2000+ | 2.17 грн |
| 5000+ | 1.82 грн |
| DF2S20CT,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 15VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 9pF @ 1MHz
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 15VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 9pF @ 1MHz
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Power Line Protection: No
Part Status: Active
на замовлення 14415 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 10.88 грн |
| 45+ | 6.73 грн |
| 100+ | 4.12 грн |
| 500+ | 2.81 грн |
| 1000+ | 2.47 грн |
| 2000+ | 2.18 грн |
| 5000+ | 1.83 грн |
| DF2S20FS,L3M |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 15VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 9pF @ 1MHz
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Power Line Protection: No
Description: TVS DIODE 15VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 9pF @ 1MHz
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Power Line Protection: No
на замовлення 4004 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 11.66 грн |
| 45+ | 6.73 грн |
| 100+ | 4.12 грн |
| 500+ | 2.80 грн |
| 1000+ | 2.46 грн |
| 2000+ | 2.17 грн |
| DF2S24FS,L3M |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 19V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Power Line Protection: No
Description: TVS DIODE 19VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 19V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Power Line Protection: No
на замовлення 27694 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 11.66 грн |
| 45+ | 6.73 грн |
| 100+ | 4.12 грн |
| 500+ | 2.80 грн |
| 1000+ | 2.46 грн |
| 2000+ | 2.17 грн |
| 5000+ | 1.82 грн |
| DF2S30CT,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 23VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 7.2pF @ 1MHz
Voltage - Reverse Standoff (Typ): 23V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 23VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 7.2pF @ 1MHz
Voltage - Reverse Standoff (Typ): 23V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Power Line Protection: No
Part Status: Active
на замовлення 9010 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 13.99 грн |
| 25+ | 12.35 грн |
| 100+ | 6.70 грн |
| 500+ | 3.87 грн |
| 1000+ | 2.64 грн |
| 2000+ | 2.24 грн |
| 5000+ | 1.99 грн |
| DF2S30FS,L3M |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 23VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Power Line Protection: No
Description: TVS DIODE 23VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Power Line Protection: No
на замовлення 44513 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 11.66 грн |
| 45+ | 6.73 грн |
| 100+ | 4.12 грн |
| 500+ | 2.80 грн |
| 1000+ | 2.46 грн |
| 2000+ | 2.17 грн |
| 5000+ | 1.82 грн |
| DF2S5.1FS,L3M |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 1.5VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 1.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.8V
Power Line Protection: No
Description: TVS DIODE 1.5VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 1.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.8V
Power Line Protection: No
на замовлення 22655 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 11.66 грн |
| 45+ | 6.73 грн |
| 100+ | 4.12 грн |
| 500+ | 2.80 грн |
| 1000+ | 2.46 грн |
| 2000+ | 2.17 грн |
| 5000+ | 1.82 грн |
| DF2S5.6FS,L3M |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Description: TVS DIODE 3.5VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
на замовлення 1592 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 10.88 грн |
| 46+ | 6.58 грн |
| 100+ | 4.07 грн |
| 500+ | 2.77 грн |
| 1000+ | 2.43 грн |
| DF2S6.2CT,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
на замовлення 98942 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 11.66 грн |
| 42+ | 7.18 грн |
| 100+ | 4.39 грн |
| 500+ | 2.99 грн |
| 1000+ | 2.63 грн |
| 2000+ | 2.32 грн |
| 5000+ | 1.95 грн |
| DF2S7MSL,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 20VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 60W
Power Line Protection: No
Description: TVS DIODE 5VWM 20VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 60W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| DF3D18FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM 33VC USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: USM
Bidirectional Channels: 2
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 80W
Power Line Protection: No
Description: TVS DIODE 12VWM 33VC USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: USM
Bidirectional Channels: 2
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 80W
Power Line Protection: No
на замовлення 23670 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.20 грн |
| 18+ | 17.51 грн |
| 100+ | 11.87 грн |
| 500+ | 8.61 грн |
| 1000+ | 7.32 грн |
| DF3D29FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 47VC
Description: TVS DIODE 24VWM 47VC
на замовлення 5914 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DF3D6.8MS,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 11VC SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SSM
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: Yes
Description: TVS DIODE 5VWM 11VC SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SSM
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: Yes
на замовлення 18897 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.32 грн |
| 32+ | 9.65 грн |
| 100+ | 5.98 грн |
| 500+ | 4.11 грн |
| 1000+ | 3.62 грн |
| DF6F6.8MTU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 24VC UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: UF6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 24V
Power Line Protection: Yes
Description: TVS DIODE 5VWM 24VC UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: UF6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 24V
Power Line Protection: Yes
товару немає в наявності
В кошику
од. на суму грн.
| SSM3J338R,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 6A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
Description: MOSFET P-CH 12V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 6A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
на замовлення 91911 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 34.97 грн |
| 15+ | 20.73 грн |
| 100+ | 13.15 грн |
| 500+ | 9.26 грн |
| 1000+ | 8.26 грн |
| SSM3J356R,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 2A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
Description: MOSFET P-CH 60V 2A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
на замовлення 68602 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 29.53 грн |
| 17+ | 17.66 грн |
| 100+ | 11.14 грн |
| 500+ | 7.80 грн |
| 1000+ | 6.94 грн |
| SSM3K56ACT,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 1.4A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
Description: MOSFET N-CH 20V 1.4A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
на замовлення 46468 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.64 грн |
| 20+ | 15.11 грн |
| 100+ | 9.50 грн |
| 500+ | 6.63 грн |
| 1000+ | 5.89 грн |
| 2000+ | 5.27 грн |
| 5000+ | 4.52 грн |
| SSM3K56MFV,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 800MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
Description: MOSFET N-CH 20V 800MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
на замовлення 89800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 26.42 грн |
| 20+ | 15.49 грн |
| 100+ | 9.73 грн |
| 500+ | 6.78 грн |
| 1000+ | 6.02 грн |
| 2000+ | 5.38 грн |
| SSM3K72CTC,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 150MA CST3C
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: CST3C
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
Description: MOSFET N-CH 60V 150MA CST3C
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: CST3C
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
на замовлення 7139 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 17.09 грн |
| 30+ | 10.10 грн |
| 100+ | 6.27 грн |
| 500+ | 4.31 грн |
| 1000+ | 3.80 грн |
| 2000+ | 3.37 грн |
| 5000+ | 2.86 грн |
| SSM6J512NU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 10A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 4A, 8V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
Description: MOSFET P-CH 12V 10A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 4A, 8V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
на замовлення 2561 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.09 грн |
| 18+ | 17.58 грн |
| 100+ | 10.57 грн |
| 500+ | 9.18 грн |
| 1000+ | 6.47 грн |
| SSM6K504NU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 9A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V
Description: MOSFET N-CH 30V 9A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V
на замовлення 2727 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.64 грн |
| 16+ | 19.53 грн |
| 100+ | 12.42 грн |
| 500+ | 8.75 грн |
| 1000+ | 7.81 грн |
| SSM6N7002KFU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.3A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Part Status: Active
Description: MOSFET 2N-CH 60V 0.3A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Part Status: Active
на замовлення 2059 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 13.99 грн |
| 37+ | 8.23 грн |
| 100+ | 5.13 грн |
| 500+ | 3.51 грн |
| 1000+ | 3.09 грн |
| DF3D29FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 47VC
Description: TVS DIODE 24VWM 47VC
на замовлення 5914 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TLP3906(TPL,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 12µA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 200µs, 300µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 12µA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 200µs, 300µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
на замовлення 75000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 49.95 грн |
| 6000+ | 46.20 грн |
| 9000+ | 45.22 грн |
| TLP3906(TPL,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 12µA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 200µs, 300µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Description: OPTOISO 3.75KV 1CH PHVOLT 6-SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 12µA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 200µs, 300µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
на замовлення 77523 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 121.99 грн |
| 10+ | 84.03 грн |
| 100+ | 63.74 грн |
| 500+ | 51.41 грн |
| 1000+ | 48.66 грн |
| TPH1R204PL,L1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| TPH1R005PL,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 45V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.04mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 22.5 V
Description: MOSFET N-CH 45V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.04mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 22.5 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 54.28 грн |
| TPH1R204PL,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
на замовлення 71 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 147.64 грн |
| 10+ | 90.91 грн |
| TPH1R005PL,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 45V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.04mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 22.5 V
Description: MOSFET N-CH 45V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.04mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 22.5 V
на замовлення 6247 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 184.16 грн |
| 10+ | 114.33 грн |
| 100+ | 78.60 грн |
| 500+ | 60.04 грн |
| 74LCX157FT(AJ) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MULTIPLEXER QUAD 2-CH 16TSSOP
Description: IC MULTIPLEXER QUAD 2-CH 16TSSOP
товару немає в наявності
В кошику
од. на суму грн.
| 74VHC393FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BIN COUNTER DL 4BIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 125°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 14-TSSOP
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 115 MHz
Number of Bits per Element: 4
Description: IC BIN COUNTER DL 4BIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 125°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 14-TSSOP
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 115 MHz
Number of Bits per Element: 4
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 7.26 грн |
| 5000+ | 6.77 грн |
| 7500+ | 6.66 грн |
| 12500+ | 6.13 грн |
























