Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13529) > Сторінка 102 з 226
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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TK20V60W5,LVQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 20A 4DFNInput Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 4-DFN-EP (8x8) Vgs(th) (Max) @ Id: 4.5V @ 1mA Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-VSFN Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TK6P65W,RQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 5.8A DPAK Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 3.5V @ 180µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TK7P65W,RQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 6.8A DPAK Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 3.4A, 10V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TK25E60X,S1X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 25A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 7.5A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TK25N60X,S1F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 25A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 7.5A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V |
на замовлення 26 шт: термін постачання 21-31 дні (днів) |
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TK7A60W5,S5VX | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 7A TO220SISInput Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220SIS Vgs(th) (Max) @ Id: 4.5V @ 350µA Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
на замовлення 46 шт: термін постачання 21-31 дні (днів) |
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TK8A60W5,S5VX | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 8A TO220SISRds On (Max) @ Id, Vgs: 540mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220SIS Vgs(th) (Max) @ Id: 4.5V @ 400µA Power Dissipation (Max): 30W (Tc) |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||||||
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TK10A60W5,S5VX | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 9.7A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 4.9A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 500µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 300 V |
на замовлення 21 шт: термін постачання 21-31 дні (днів) |
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TK20N60W5,S1VF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 20A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 175mOhm @ 10A, 10V Power Dissipation (Max): 165W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V |
на замовлення 23 шт: термін постачання 21-31 дні (днів) |
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TK25N60X5,S1F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 25A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.2mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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TK39N60W5,S1VF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 38.8A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta) Rds On (Max) @ Id, Vgs: 74mOhm @ 19.4A, 10V Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.9mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V |
на замовлення 645 шт: термін постачання 21-31 дні (днів) |
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TK5Q65W,S1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 5.2A IPAK Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: I-PAK Vgs(th) (Max) @ Id: 3.5V @ 170µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 1.22Ohm @ 2.6A, 10V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Stub Leads, IPak Packaging: Tube |
на замовлення 75 шт: термін постачання 21-31 дні (днів) |
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TK6Q65W,S1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 5.8A IPAK-OS |
на замовлення 375 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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TK17E65W,S1X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 17.3A TO220Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 3.5V @ 900µA Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 8.7A, 10V Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 23 шт: термін постачання 21-31 дні (днів) |
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TK8A65W,S5X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 7.8A TO220SISInput Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220SIS Vgs(th) (Max) @ Id: 3.5V @ 300µA Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 3.9A, 10V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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TK17N65W,S1F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 17.3A TO247Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Part Status: Active Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 3.5V @ 900µA Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 8.7A, 10V Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TK28N65W,S1F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 27.6A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1.6mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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TK14E65W5,S1X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 13.7A TO220Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4.5V @ 690µA Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TK35A65W5,S5X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 35A TO220SIS |
на замовлення 76 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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TK14N65W5,S1F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 13.7A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 690µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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TK25A60X,S5X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 25A TO220SISInput Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220SIS Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
на замовлення 32 шт: термін постачання 21-31 дні (днів) |
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TK16E60W5,S1VX | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 15.8A TO220Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4.5V @ 790µA Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TK25A60X5,S5X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 25A TO220SISInput Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220SIS Vgs(th) (Max) @ Id: 4.5V @ 1.2mA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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TK8Q65W,S1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 7.8A IPAKInput Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: I-PAK Vgs(th) (Max) @ Id: 3.5V @ 300µA Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 670mOhm @ 3.9A, 10V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Stub Leads, IPak Packaging: Tube |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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TK5A65W,S5X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 5.2A TO-220SIS |
на замовлення 98 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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TK6A65W,S5X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 5.8A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.9A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 180µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V |
на замовлення 58 шт: термін постачання 21-31 дні (днів) |
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TK7A65W,S5X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 6.8A TO220SIS |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||||||
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TK9A65W,S5X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 9.3A TO-220SIS |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||||||
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TK28A65W,S5X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 27.6A TO220SISInput Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220SIS Vgs(th) (Max) @ Id: 3.5V @ 1.6mA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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TBD62003APG | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 16DIPPackaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 7 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Input Type: Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 16-DIP Part Status: Active |
на замовлення 1131 шт: термін постачання 21-31 дні (днів) |
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TBD62004APG | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 16DIPPackaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 7 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Input Type: Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 16-DIP Part Status: Active |
на замовлення 746 шт: термін постачання 21-31 дні (днів) |
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TBD62083APG | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 18DIPPackaging: Tube Package / Case: 18-DIP (0.300", 7.62mm) Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 8 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Input Type: Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 18-DIP Part Status: Active |
на замовлення 8487 шт: термін постачання 21-31 дні (днів) |
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TBD62084APG | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 18DIPPackaging: Tube Package / Case: 18-DIP (0.300", 7.62mm) Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 8 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Input Type: Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 18-DIP Part Status: Active |
на замовлення 62 шт: термін постачання 21-31 дні (днів) |
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TBD62783APG | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH P-CHAN 1:1 18DIPPackaging: Tube Package / Case: 18-DIP (0.300", 7.62mm) Output Type: P-Channel Mounting Type: Through Hole Number of Outputs: 8 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Input Type: Non-Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 18-DIP Part Status: Active |
на замовлення 2104 шт: термін постачання 21-31 дні (днів) |
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TB6562ANG,8 | Toshiba Semiconductor and Storage |
Description: IC MTR DRV BIPOLAR 10-34V 24SDIPStep Resolution: 1, 1/2, 1/4 Motor Type - AC, DC: Brushed DC Motor Type - Stepper: Bipolar Supplier Device Package: 24-SDIP Voltage - Load: 10V ~ 34V Technology: DMOS Applications: General Purpose Voltage - Supply: 10V ~ 34V Output Configuration: Half Bridge (4) Operating Temperature: -20°C ~ 150°C (TJ) Interface: Parallel Current - Output: 1.5A Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Through Hole Package / Case: 24-SDIP (0.300", 7.62mm) Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||||||
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TBD62003AFG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 16SOPPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.173", 4.40mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 7 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Input Type: Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 16-SOP Part Status: Active |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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TBD62003AFNG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 16SSOPPackaging: Tape & Reel (TR) Package / Case: 16-LSSOP (0.173", 4.40mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 7 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Input Type: Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 16-SSOP Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TBD62003AFWG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 16SOPPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 7 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Input Type: Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 16-SOP Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TBD62004AFG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 16SOPPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.173", 4.40mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 7 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Input Type: Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 16-SOP Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TBD62004AFNG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 16SSOPPackaging: Tape & Reel (TR) Package / Case: 16-LSSOP (0.173", 4.40mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 7 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Input Type: Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 16-SSOP Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TBD62004AFWG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 16SOPPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 7 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Input Type: Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 16-SOP Part Status: Active |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TBD62083AFG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 18SOPPackaging: Tape & Reel (TR) Package / Case: 18-SOIC (0.276", 7.00mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: On/Off Switch Type: General Purpose Logic Type: DMOS Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Voltage - Supply: 2.5V ~ 25V Input Type: Inverting Current - Output High, Low: 350mA, 100mA Number of Inputs: 8 Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 18-SOP Max Propagation Delay @ V, Max CL: 800ms @ 50V, 15pF Part Status: Active Number of Circuits: 8 Current - Quiescent (Max): 1 µA |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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TBD62083AFNG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 18SSOPPackaging: Tape & Reel (TR) Package / Case: 18-LSSOP (0.173", 4.40mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: On/Off Switch Type: General Purpose Logic Type: DMOS Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Voltage - Supply: 2.5V ~ 25V Input Type: Inverting Current - Output High, Low: 350mA, 100mA Number of Inputs: 8 Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 18-SSOP Max Propagation Delay @ V, Max CL: 800ms @ 50V, 15pF Part Status: Active Number of Circuits: 8 Current - Quiescent (Max): 1 µA |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TBD62083AFWG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 18SOPPackaging: Tape & Reel (TR) Package / Case: 18-SOIC (0.295", 7.50mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: On/Off Switch Type: General Purpose Logic Type: DMOS Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Voltage - Supply: 2.5V ~ 25V Input Type: Inverting Current - Output High, Low: 350mA, 100mA Number of Inputs: 8 Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 18-SOP Max Propagation Delay @ V, Max CL: 800ms @ 50V, 15pF Part Status: Active Number of Circuits: 8 Current - Quiescent (Max): 1 µA |
на замовлення 129775 шт: термін постачання 21-31 дні (днів) |
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TBD62084AFG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 18SOPPackaging: Tape & Reel (TR) Package / Case: 18-SOIC (0.276", 7.00mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Input Type: Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 18-SOP Part Status: Active |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TBD62084AFNG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 18SSOPPackaging: Tape & Reel (TR) Package / Case: 18-LSSOP (0.173", 4.40mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Input Type: Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 18-SSOP Part Status: Active |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TBD62084AFWG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 18SOPPackaging: Tape & Reel (TR) Package / Case: 18-SOIC (0.295", 7.50mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Input Type: Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 18-SOP Part Status: Active Logic Type: DMOS Voltage - Supply: 7V ~ 25V Current - Output High, Low: 350mA, 100mA Number of Inputs: 8 Max Propagation Delay @ V, Max CL: 800ms @ 50V, 15pF Number of Circuits: 8 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TBD62502AFG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 16SOPSupplier Device Package: 16-SOP Ratio - Input:Output: 1:1 Current - Output (Max): 300mA Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 50V (Max) Input Type: Inverting Output Configuration: Low Side Operating Temperature: -40°C ~ 85°C (TA) Switch Type: General Purpose Interface: On/Off Number of Outputs: 7 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 16-SOIC (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TBD62502AFNG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 16SSOPVoltage - Load: 50V (Max) Input Type: Inverting Output Configuration: Low Side Operating Temperature: -40°C ~ 85°C (TA) Switch Type: General Purpose Interface: On/Off Number of Outputs: 7 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 16-LSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) Supplier Device Package: 16-SSOP Ratio - Input:Output: 1:1 Current - Output (Max): 300mA Voltage - Supply (Vcc/Vdd): Not Required |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TBD62502AFWG,EL | Toshiba Semiconductor and Storage |
Description: IC LOAD SWITCH 7CH 0.3A 16PSOP |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TBD62783AFG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH P-CHAN 1:1 18SOPPackaging: Tape & Reel (TR) Package / Case: 18-SOIC (0.276", 7.00mm Width) Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Input Type: Non-Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 18-SOP Part Status: Active |
на замовлення 31000 шт: термін постачання 21-31 дні (днів) |
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TBD62783AFNG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH P-CHAN 1:1 18SSOPPackaging: Tape & Reel (TR) Package / Case: 18-LSSOP (0.173", 4.40mm Width) Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Input Type: Non-Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 18-SSOP Part Status: Active |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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TBD62783AFWG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH P-CHAN 1:1 18SOPPackaging: Tape & Reel (TR) Package / Case: 18-SOIC (0.295", 7.50mm Width) Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Input Type: Non-Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 18-SOP Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TBD62003AFG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 16SOPPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.173", 4.40mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 7 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Input Type: Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 16-SOP Part Status: Active |
на замовлення 9220 шт: термін постачання 21-31 дні (днів) |
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TBD62003AFNG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 16SSOPPackaging: Cut Tape (CT) Package / Case: 16-LSSOP (0.173", 4.40mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 7 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Input Type: Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 16-SSOP Part Status: Active |
на замовлення 6854 шт: термін постачання 21-31 дні (днів) |
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TBD62003AFWG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 16SOPPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 7 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Input Type: Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 16-SOP Part Status: Active |
на замовлення 7318 шт: термін постачання 21-31 дні (днів) |
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TBD62004AFG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 16SOPPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.173", 4.40mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 7 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Input Type: Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 16-SOP Part Status: Active |
на замовлення 7930 шт: термін постачання 21-31 дні (днів) |
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TBD62004AFNG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 16SSOPPackaging: Cut Tape (CT) Package / Case: 16-LSSOP (0.173", 4.40mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 7 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Input Type: Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 16-SSOP Part Status: Active |
на замовлення 1972 шт: термін постачання 21-31 дні (днів) |
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TBD62004AFWG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 16SOPPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 7 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Input Type: Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 16-SOP Part Status: Active |
на замовлення 4079 шт: термін постачання 21-31 дні (днів) |
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TBD62083AFG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 18SOPPackaging: Cut Tape (CT) Package / Case: 18-SOIC (0.276", 7.00mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: On/Off Switch Type: General Purpose Logic Type: DMOS Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Voltage - Supply: 2.5V ~ 25V Input Type: Inverting Current - Output High, Low: 350mA, 100mA Number of Inputs: 8 Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 18-SOP Max Propagation Delay @ V, Max CL: 800ms @ 50V, 15pF Part Status: Active Number of Circuits: 8 Current - Quiescent (Max): 1 µA |
на замовлення 16784 шт: термін постачання 21-31 дні (днів) |
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| TK20V60W5,LVQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A 4DFN
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-DFN-EP (8x8)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-VSFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 20A 4DFN
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-DFN-EP (8x8)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-VSFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 99.85 грн |
| TK6P65W,RQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 5.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 650V 5.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| TK7P65W,RQ |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 6.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 650V 6.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| TK25E60X,S1X |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 25A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
Description: MOSFET N-CH 600V 25A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
товару немає в наявності
В кошику
од. на суму грн.
| TK25N60X,S1F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 25A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
Description: MOSFET N-CH 600V 25A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 421.55 грн |
| TK7A60W5,S5VX |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 7A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4.5V @ 350µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 600V 7A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4.5V @ 350µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 46 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 165.06 грн |
| TK8A60W5,S5VX |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 8A TO220SIS
Rds On (Max) @ Id, Vgs: 540mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Power Dissipation (Max): 30W (Tc)
Description: MOSFET N-CH 600V 8A TO220SIS
Rds On (Max) @ Id, Vgs: 540mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Power Dissipation (Max): 30W (Tc)
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| TK10A60W5,S5VX |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 9.7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 300 V
Description: MOSFET N-CH 600V 9.7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 300 V
на замовлення 21 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 179.00 грн |
| TK20N60W5,S1VF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 333.99 грн |
| TK25N60X5,S1F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 25A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
Description: MOSFET N-CH 600V 25A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 416.13 грн |
| 30+ | 228.59 грн |
| TK39N60W5,S1VF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 38.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
Description: MOSFET N-CH 600V 38.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
на замовлення 645 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 498.27 грн |
| 30+ | 278.16 грн |
| 120+ | 233.84 грн |
| 510+ | 197.73 грн |
| TK5Q65W,S1Q |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 5.2A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: I-PAK
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Description: MOSFET N-CH 650V 5.2A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: I-PAK
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98.41 грн |
| 10+ | 84.69 грн |
| TK6Q65W,S1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 5.8A IPAK-OS
Description: MOSFET N-CH 650V 5.8A IPAK-OS
на замовлення 375 шт:
термін постачання 21-31 дні (днів)
| TK17E65W,S1X |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 17.3A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 8.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 650V 17.3A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 8.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 267.34 грн |
| TK8A65W,S5X |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 7.8A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 650V 7.8A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 117.79 грн |
| 50+ | 60.67 грн |
| TK17N65W,S1F |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 17.3A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 8.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 650V 17.3A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 8.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Package / Case: TO-247-3
Packaging: Tube
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В кошику
од. на суму грн.
| TK28N65W,S1F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 27.6A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Description: MOSFET N-CH 650V 27.6A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 438.60 грн |
| 30+ | 240.08 грн |
| TK14E65W5,S1X |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13.7A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 650V 13.7A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| TK35A65W5,S5X |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 35A TO220SIS
Description: MOSFET N-CH 650V 35A TO220SIS
на замовлення 76 шт:
термін постачання 21-31 дні (днів)
| TK14N65W5,S1F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13.7A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
Description: MOSFET N-CH 650V 13.7A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 336.31 грн |
| 30+ | 180.06 грн |
| TK25A60X,S5X |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 25A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 600V 25A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 32 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 300.66 грн |
| TK16E60W5,S1VX |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15.8A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 600V 15.8A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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В кошику
од. на суму грн.
| TK25A60X5,S5X |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 25A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 600V 25A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 372.73 грн |
| TK8Q65W,S1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 7.8A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: I-PAK
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Description: MOSFET N-CH 650V 7.8A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: I-PAK
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 133.28 грн |
| TK5A65W,S5X |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 5.2A TO-220SIS
Description: MOSFET N-CH 650V 5.2A TO-220SIS
на замовлення 98 шт:
термін постачання 21-31 дні (днів)
| TK6A65W,S5X |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 5.8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
Description: MOSFET N-CH 650V 5.8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
на замовлення 58 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 160.41 грн |
| 50+ | 74.76 грн |
| TK7A65W,S5X |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 6.8A TO220SIS
Description: MOSFET N-CH 650V 6.8A TO220SIS
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| TK9A65W,S5X |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 9.3A TO-220SIS
Description: MOSFET N-CH 650V 9.3A TO-220SIS
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| TK28A65W,S5X |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 27.6A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 650V 27.6A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 416.13 грн |
| 50+ | 211.89 грн |
| 100+ | 193.59 грн |
| TBD62003APG |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
Part Status: Active
на замовлення 1131 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 172.80 грн |
| 10+ | 123.35 грн |
| 25+ | 112.71 грн |
| 100+ | 94.76 грн |
| 250+ | 89.51 грн |
| 500+ | 86.35 грн |
| 1000+ | 82.37 грн |
| TBD62004APG |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
Part Status: Active
на замовлення 746 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 118.56 грн |
| 10+ | 83.50 грн |
| 25+ | 75.90 грн |
| 100+ | 63.38 грн |
| 250+ | 59.63 грн |
| 500+ | 57.38 грн |
| TBD62083APG |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-DIP
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-DIP
Part Status: Active
на замовлення 8487 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 186.75 грн |
| 20+ | 125.33 грн |
| 40+ | 117.94 грн |
| 100+ | 103.38 грн |
| 260+ | 97.53 грн |
| 500+ | 94.33 грн |
| 1000+ | 90.03 грн |
| 2500+ | 87.12 грн |
| 5000+ | 85.37 грн |
| TBD62084APG |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-DIP
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-DIP
Part Status: Active
на замовлення 62 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 141.81 грн |
| 20+ | 94.10 грн |
| 40+ | 88.37 грн |
| TBD62783APG |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Output Type: P-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-DIP
Part Status: Active
Description: IC PWR SWITCH P-CHAN 1:1 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Output Type: P-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-DIP
Part Status: Active
на замовлення 2104 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 195.28 грн |
| 21+ | 130.66 грн |
| 42+ | 123.12 грн |
| 105+ | 108.08 грн |
| 252+ | 102.53 грн |
| 504+ | 99.01 грн |
| 1008+ | 94.53 грн |
| TB6562ANG,8 |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MTR DRV BIPOLAR 10-34V 24SDIP
Step Resolution: 1, 1/2, 1/4
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 24-SDIP
Voltage - Load: 10V ~ 34V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 10V ~ 34V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 1.5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Through Hole
Package / Case: 24-SDIP (0.300", 7.62mm)
Packaging: Tube
Description: IC MTR DRV BIPOLAR 10-34V 24SDIP
Step Resolution: 1, 1/2, 1/4
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 24-SDIP
Voltage - Load: 10V ~ 34V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 10V ~ 34V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 1.5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Through Hole
Package / Case: 24-SDIP (0.300", 7.62mm)
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| TBD62003AFG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 46.80 грн |
| 4000+ | 43.97 грн |
| 6000+ | 43.42 грн |
| TBD62003AFNG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SSOP
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SSOP
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 57.55 грн |
| 4000+ | 54.12 грн |
| 6000+ | 53.47 грн |
| TBD62003AFWG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 38.12 грн |
| 4000+ | 35.78 грн |
| 6000+ | 35.32 грн |
| TBD62004AFG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 45.95 грн |
| 4000+ | 43.17 грн |
| 6000+ | 42.63 грн |
| TBD62004AFNG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SSOP
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SSOP
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| TBD62004AFWG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 38.12 грн |
| 4000+ | 35.78 грн |
| TBD62083AFG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Logic Type: DMOS
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Voltage - Supply: 2.5V ~ 25V
Input Type: Inverting
Current - Output High, Low: 350mA, 100mA
Number of Inputs: 8
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Max Propagation Delay @ V, Max CL: 800ms @ 50V, 15pF
Part Status: Active
Number of Circuits: 8
Current - Quiescent (Max): 1 µA
Description: IC PWR SWITCH N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Logic Type: DMOS
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Voltage - Supply: 2.5V ~ 25V
Input Type: Inverting
Current - Output High, Low: 350mA, 100mA
Number of Inputs: 8
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Max Propagation Delay @ V, Max CL: 800ms @ 50V, 15pF
Part Status: Active
Number of Circuits: 8
Current - Quiescent (Max): 1 µA
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 70.74 грн |
| 2000+ | 66.30 грн |
| 3000+ | 65.39 грн |
| 5000+ | 60.42 грн |
| 7000+ | 59.86 грн |
| 10000+ | 59.33 грн |
| TBD62083AFNG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 18SSOP
Packaging: Tape & Reel (TR)
Package / Case: 18-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Logic Type: DMOS
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Voltage - Supply: 2.5V ~ 25V
Input Type: Inverting
Current - Output High, Low: 350mA, 100mA
Number of Inputs: 8
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SSOP
Max Propagation Delay @ V, Max CL: 800ms @ 50V, 15pF
Part Status: Active
Number of Circuits: 8
Current - Quiescent (Max): 1 µA
Description: IC PWR SWITCH N-CHAN 1:1 18SSOP
Packaging: Tape & Reel (TR)
Package / Case: 18-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Logic Type: DMOS
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Voltage - Supply: 2.5V ~ 25V
Input Type: Inverting
Current - Output High, Low: 350mA, 100mA
Number of Inputs: 8
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SSOP
Max Propagation Delay @ V, Max CL: 800ms @ 50V, 15pF
Part Status: Active
Number of Circuits: 8
Current - Quiescent (Max): 1 µA
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 71.52 грн |
| TBD62083AFWG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Logic Type: DMOS
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Voltage - Supply: 2.5V ~ 25V
Input Type: Inverting
Current - Output High, Low: 350mA, 100mA
Number of Inputs: 8
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Max Propagation Delay @ V, Max CL: 800ms @ 50V, 15pF
Part Status: Active
Number of Circuits: 8
Current - Quiescent (Max): 1 µA
Description: IC PWR SWITCH N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Logic Type: DMOS
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Voltage - Supply: 2.5V ~ 25V
Input Type: Inverting
Current - Output High, Low: 350mA, 100mA
Number of Inputs: 8
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Max Propagation Delay @ V, Max CL: 800ms @ 50V, 15pF
Part Status: Active
Number of Circuits: 8
Current - Quiescent (Max): 1 µA
на замовлення 129775 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 60.64 грн |
| TBD62084AFG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 70.74 грн |
| 2000+ | 66.30 грн |
| 3000+ | 65.39 грн |
| 5000+ | 60.42 грн |
| TBD62084AFNG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 18SSOP
Packaging: Tape & Reel (TR)
Package / Case: 18-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SSOP
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 18SSOP
Packaging: Tape & Reel (TR)
Package / Case: 18-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SSOP
Part Status: Active
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 69.24 грн |
| 4000+ | 65.18 грн |
| TBD62084AFWG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Part Status: Active
Logic Type: DMOS
Voltage - Supply: 7V ~ 25V
Current - Output High, Low: 350mA, 100mA
Number of Inputs: 8
Max Propagation Delay @ V, Max CL: 800ms @ 50V, 15pF
Number of Circuits: 8
Current - Quiescent (Max): 1 µA
Description: IC PWR SWITCH N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Part Status: Active
Logic Type: DMOS
Voltage - Supply: 7V ~ 25V
Current - Output High, Low: 350mA, 100mA
Number of Inputs: 8
Max Propagation Delay @ V, Max CL: 800ms @ 50V, 15pF
Number of Circuits: 8
Current - Quiescent (Max): 1 µA
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| TBD62502AFG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Supplier Device Package: 16-SOP
Ratio - Input:Output: 1:1
Current - Output (Max): 300mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 50V (Max)
Input Type: Inverting
Output Configuration: Low Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 7
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Supplier Device Package: 16-SOP
Ratio - Input:Output: 1:1
Current - Output (Max): 300mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 50V (Max)
Input Type: Inverting
Output Configuration: Low Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 7
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| TBD62502AFNG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SSOP
Voltage - Load: 50V (Max)
Input Type: Inverting
Output Configuration: Low Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 7
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 16-SSOP
Ratio - Input:Output: 1:1
Current - Output (Max): 300mA
Voltage - Supply (Vcc/Vdd): Not Required
Description: IC PWR SWITCH N-CHAN 1:1 16SSOP
Voltage - Load: 50V (Max)
Input Type: Inverting
Output Configuration: Low Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 7
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 16-SSOP
Ratio - Input:Output: 1:1
Current - Output (Max): 300mA
Voltage - Supply (Vcc/Vdd): Not Required
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 53.04 грн |
| 4000+ | 49.87 грн |
| TBD62502AFWG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC LOAD SWITCH 7CH 0.3A 16PSOP
Description: IC LOAD SWITCH 7CH 0.3A 16PSOP
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| TBD62783AFG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Part Status: Active
Description: IC PWR SWITCH P-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Part Status: Active
на замовлення 31000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 85.76 грн |
| 2000+ | 80.45 грн |
| 3000+ | 79.38 грн |
| 5000+ | 73.38 грн |
| 7000+ | 72.73 грн |
| TBD62783AFNG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 18SSOP
Packaging: Tape & Reel (TR)
Package / Case: 18-LSSOP (0.173", 4.40mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SSOP
Part Status: Active
Description: IC PWR SWITCH P-CHAN 1:1 18SSOP
Packaging: Tape & Reel (TR)
Package / Case: 18-LSSOP (0.173", 4.40mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SSOP
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 93.92 грн |
| TBD62783AFWG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Part Status: Active
Description: IC PWR SWITCH P-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 57.85 грн |
| 2000+ | 54.16 грн |
| 3000+ | 53.39 грн |
| 5000+ | 49.30 грн |
| TBD62003AFG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
на замовлення 9220 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 94.54 грн |
| 10+ | 66.34 грн |
| 25+ | 60.08 грн |
| 100+ | 49.97 грн |
| 250+ | 46.91 грн |
| 500+ | 45.06 грн |
| 1000+ | 43.69 грн |
| TBD62003AFNG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SSOP
Packaging: Cut Tape (CT)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SSOP
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 16SSOP
Packaging: Cut Tape (CT)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SSOP
Part Status: Active
на замовлення 6854 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 113.91 грн |
| 10+ | 80.59 грн |
| 25+ | 73.19 грн |
| 100+ | 61.11 грн |
| 250+ | 57.47 грн |
| 500+ | 55.29 грн |
| 1000+ | 54.04 грн |
| TBD62003AFWG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
на замовлення 7318 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.04 грн |
| 10+ | 54.70 грн |
| 25+ | 49.40 грн |
| 100+ | 40.93 грн |
| 250+ | 38.35 грн |
| 500+ | 36.79 грн |
| 1000+ | 35.38 грн |
| TBD62004AFG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
на замовлення 7930 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 92.99 грн |
| 10+ | 65.14 грн |
| 25+ | 59.01 грн |
| 100+ | 49.06 грн |
| 250+ | 46.06 грн |
| 500+ | 44.25 грн |
| 1000+ | 42.90 грн |
| TBD62004AFNG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SSOP
Packaging: Cut Tape (CT)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SSOP
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 16SSOP
Packaging: Cut Tape (CT)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SSOP
Part Status: Active
на замовлення 1972 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 112.36 грн |
| 10+ | 79.10 грн |
| 25+ | 71.87 грн |
| 100+ | 59.99 грн |
| 250+ | 56.43 грн |
| 500+ | 54.28 грн |
| 1000+ | 53.06 грн |
| TBD62004AFWG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
на замовлення 4079 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.04 грн |
| 10+ | 54.70 грн |
| 25+ | 49.40 грн |
| 100+ | 40.93 грн |
| 250+ | 38.35 грн |
| 500+ | 36.79 грн |
| 1000+ | 35.38 грн |
| TBD62083AFG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 18SOP
Packaging: Cut Tape (CT)
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Logic Type: DMOS
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Voltage - Supply: 2.5V ~ 25V
Input Type: Inverting
Current - Output High, Low: 350mA, 100mA
Number of Inputs: 8
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Max Propagation Delay @ V, Max CL: 800ms @ 50V, 15pF
Part Status: Active
Number of Circuits: 8
Current - Quiescent (Max): 1 µA
Description: IC PWR SWITCH N-CHAN 1:1 18SOP
Packaging: Cut Tape (CT)
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Logic Type: DMOS
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Voltage - Supply: 2.5V ~ 25V
Input Type: Inverting
Current - Output High, Low: 350mA, 100mA
Number of Inputs: 8
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Max Propagation Delay @ V, Max CL: 800ms @ 50V, 15pF
Part Status: Active
Number of Circuits: 8
Current - Quiescent (Max): 1 µA
на замовлення 16784 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 134.06 грн |
| 10+ | 95.29 грн |
| 25+ | 86.83 грн |
| 100+ | 72.71 грн |
| 250+ | 68.53 грн |
| 500+ | 66.09 грн |




















