Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13498) > Сторінка 219 з 225
| Фото | Назва | Виробник | Інформація |
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| TCR2LE085,LM(CT | Toshiba Semiconductor and Storage |
Description: LOW DROPOUT (LDO) IOUT: 200MA PDPackaging: Tape & Reel (TR) Package / Case: SOT-553 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: ESV Voltage - Output (Min/Fixed): 0.85V Control Features: Enable Voltage Dropout (Max): 1.58V @ 150mA Protection Features: Over Current |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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| TCR2LE085,LM(CT | Toshiba Semiconductor and Storage |
Description: LOW DROPOUT (LDO) IOUT: 200MA PDPackaging: Cut Tape (CT) Package / Case: SOT-553 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: ESV Voltage - Output (Min/Fixed): 0.85V Control Features: Enable Voltage Dropout (Max): 1.58V @ 150mA Protection Features: Over Current |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TCR2EF105,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.05V 200MA SMVPackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 1.05V Control Features: Enable PSRR: 73dB (1kHz) Voltage Dropout (Max): 0.77V @ 150mA Protection Features: Over Current |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TCR2EF105,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.05V 200MA SMVPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 1.05V Control Features: Enable PSRR: 73dB (1kHz) Voltage Dropout (Max): 0.77V @ 150mA Protection Features: Over Current |
на замовлення 2975 шт: термін постачання 21-31 дні (днів) |
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| TCR2LE115,LM(CT | Toshiba Semiconductor and Storage |
Description: LOW DROPOUT (LDO) IOUT: 200MA PDPackaging: Tape & Reel (TR) Package / Case: SOT-553 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: ESV Voltage - Output (Min/Fixed): 1.15V Control Features: Enable Voltage Dropout (Max): 1.3V @ 150mA Protection Features: Over Current |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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| TCR2LE115,LM(CT | Toshiba Semiconductor and Storage |
Description: LOW DROPOUT (LDO) IOUT: 200MA PDPackaging: Cut Tape (CT) Package / Case: SOT-553 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: ESV Voltage - Output (Min/Fixed): 1.15V Control Features: Enable Voltage Dropout (Max): 1.3V @ 150mA Protection Features: Over Current |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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| TCR2LE095,LM(CT | Toshiba Semiconductor and Storage |
Description: LOW DROPOUT (LDO) IOUT: 200MA PDPackaging: Tape & Reel (TR) Package / Case: SOT-553 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: ESV Voltage - Output (Min/Fixed): 0.95V Control Features: Enable Voltage Dropout (Max): 1.48V @ 150mA Protection Features: Over Current |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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| TCR2LE095,LM(CT | Toshiba Semiconductor and Storage |
Description: LOW DROPOUT (LDO) IOUT: 200MA PDPackaging: Cut Tape (CT) Package / Case: SOT-553 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: ESV Voltage - Output (Min/Fixed): 0.95V Control Features: Enable Voltage Dropout (Max): 1.48V @ 150mA Protection Features: Over Current |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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| TPH6R008QM,LQ | Toshiba Semiconductor and Storage |
Description: 80V UMOS9-H SOP-ADVANCE(N) 6MOHM Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 29.5A, 10V Power Dissipation (Max): 3W (Ta), 135W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 400µA Supplier Device Package: 8-SOP Advance (5x5.75) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| TPH6R008QM,LQ | Toshiba Semiconductor and Storage |
Description: 80V UMOS9-H SOP-ADVANCE(N) 6MOHM Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 29.5A, 10V Power Dissipation (Max): 3W (Ta), 135W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 400µA Supplier Device Package: 8-SOP Advance (5x5.75) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V |
на замовлення 9980 шт: термін постачання 21-31 дні (днів) |
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TK040N60Z1,S1F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 52A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 21.2A, 10V Power Dissipation (Max): 297W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.4mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 300 V |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
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TD62503FG,EL | Toshiba Semiconductor and Storage |
Description: IC DRIVER 7/0 16SOPPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Type: Driver Operating Temperature: -40°C ~ 85°C Number of Drivers/Receivers: 7/0 Supplier Device Package: 16-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TC74AC04FTEL | Toshiba Semiconductor and Storage |
Description: IC INVERTER 6CH 1IN 14TSSOPPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 24mA, 24mA Number of Inputs: 1 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.5V ~ 3.85V Input Logic Level - Low: 0.5V ~ 1.65V Max Propagation Delay @ V, Max CL: 6.6ns @ 5V, 50pF Number of Circuits: 6 Current - Quiescent (Max): 4 µA |
на замовлення 989 шт: термін постачання 21-31 дні (днів) |
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MKZ6V8,LM(B | Toshiba Semiconductor and Storage |
Description: 6.8V ZENER DIODE, SOT23 PD (MAX) Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 88pF @ 1MHz Current - Peak Pulse (10/1000µs): 10A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SOT-23-3 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 13V (Typ) Power - Peak Pulse: 180W Power Line Protection: No |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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MKZ6V8,LM(B | Toshiba Semiconductor and Storage |
Description: 6.8V ZENER DIODE, SOT23 PD (MAX) Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 88pF @ 1MHz Current - Peak Pulse (10/1000µs): 10A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SOT-23-3 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 13V (Typ) Power - Peak Pulse: 180W Power Line Protection: No |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TMPM4MNFYAFG(DBB) | Toshiba Semiconductor and Storage |
Description: MCU, CORTEX M4F, VE, 160MHZ, CAN Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 160MHz Program Memory Size: 256KB (256K x 8) RAM Size: 24K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 32K x 8 Core Processor: ARM® Cortex®-M4F Data Converters: A/D 22x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, I2C, SIO, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 100-LQFP (14x14) Number of I/O: 87 |
на замовлення 890 шт: термін постачання 21-31 дні (днів) |
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TK068N65Z5,S1F | Toshiba Semiconductor and Storage |
Description: 650V DTMOS6-HSD TO-247 68MOHMPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Ta) Rds On (Max) @ Id, Vgs: 68mOhm @ 18.5A, 10V Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.69mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3765 pF @ 300 V |
на замовлення 235 шт: термін постачання 21-31 дні (днів) |
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TB67Z833HFTG(O,EL) | Toshiba Semiconductor and Storage |
Description: 80V 3-PHASE GATE DRIVER,HW INTERPackaging: Tape & Reel (TR) Package / Case: 40-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 8V ~ 75V Input Type: Non-Inverting Supplier Device Package: 40-WQFN (6x6) Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 1.5V Current - Peak Output (Source, Sink): 1A, 2A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TB67Z833HFTG(O,EL) | Toshiba Semiconductor and Storage |
Description: 80V 3-PHASE GATE DRIVER,HW INTERPackaging: Cut Tape (CT) Package / Case: 40-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 8V ~ 75V Input Type: Non-Inverting Supplier Device Package: 40-WQFN (6x6) Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 1.5V Current - Peak Output (Source, Sink): 1A, 2A |
на замовлення 3650 шт: термін постачання 21-31 дні (днів) |
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| TC74HCT240AF(EL,F) | Toshiba Semiconductor and Storage |
Description: IC BUFFER INVERT 5.5V 20SOIC Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.209", 5.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 6mA, 6mA Supplier Device Package: 20-SOP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MN08ADA400E | Toshiba Semiconductor and Storage |
Description: MN08 NAS 4TB Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MN08ADA600 | Toshiba Semiconductor and Storage |
Description: MN08 NAS 6TBPackaging: Bulk Memory Size: 6TB Memory Type: Magnetic Disk (HDD) Type: SATA Form Factor: 3.5" |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MN08ADA800 | Toshiba Semiconductor and Storage |
Description: MN08 NAS 8TBPackaging: Bulk Memory Size: 8TB Memory Type: Magnetic Disk (HDD) Type: SATA Form Factor: 3.5" |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TC74HC153AF(EL,F) | Toshiba Semiconductor and Storage |
Description: IC DATA SELECT/MUX 2X4:1 16-SOPPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Circuit: 2 x 4:1 Type: Data Selector/Multiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 5.2mA, 5.2mA Voltage Supply Source: Single Supply Supplier Device Package: 16-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TC78S600FTG,EL | Toshiba Semiconductor and Storage |
Description: STEPPER MOTOR DRIVER IC, 18V/1.0Packaging: Cut Tape (CT) Package / Case: 24-WFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 800mA Interface: Parallel Operating Temperature: -20°C ~ 85°C Output Configuration: Half Bridge (4) Voltage - Supply: 2.7V ~ 5.5V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 2.5V ~ 15V Supplier Device Package: 24-WQFN (4x4) Motor Type - Stepper: Bipolar Step Resolution: 1/2, 1/4, 1/8, 1/16 |
на замовлення 4398 шт: термін постачання 21-31 дні (днів) |
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TC4081BF(EL,N,F) | Toshiba Semiconductor and Storage |
Description: IC GATE AND 4CH 2-INP 14SOP Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 18V Current - Output High, Low: 3.4mA, 3.4mA Number of Inputs: 2 Supplier Device Package: 14-SOP Input Logic Level - High: 3.5V ~ 11V Input Logic Level - Low: 1.5V ~ 4V Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TC4081BF(EL,N,F) | Toshiba Semiconductor and Storage |
Description: IC GATE AND 4CH 2-INP 14SOP Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 18V Current - Output High, Low: 3.4mA, 3.4mA Number of Inputs: 2 Supplier Device Package: 14-SOP Input Logic Level - High: 3.5V ~ 11V Input Logic Level - Low: 1.5V ~ 4V Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TRS20N120HB,S1Q | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY SIC 1200V 32A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 32A Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A Current - Reverse Leakage @ Vr: 80 µA @ 1200 V |
на замовлення 58 шт: термін постачання 21-31 дні (днів) |
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TRS15N120HB,S1Q | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY SIC 1200V 25A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 25A Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 7.5 A Current - Reverse Leakage @ Vr: 60 µA @ 1200 V |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
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TLP171D(TP,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 200MA 0-200VPackaging: Tape & Reel (TR) Package / Case: 4-SOP (0.173", 4.40mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 85°C Termination Style: Gull Wing Load Current: 200 mA Approval Agency: cUL, UL, VDE Supplier Device Package: 4-SOP Voltage - Load: 0 V ~ 200 V On-State Resistance (Max): 8 Ohms |
на замовлення 2440 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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TLP171D(TP,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 200MA 0-200VPackaging: Cut Tape (CT) Package / Case: 4-SOP (0.173", 4.40mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 85°C Termination Style: Gull Wing Load Current: 200 mA Approval Agency: cUL, UL, VDE Supplier Device Package: 4-SOP Voltage - Load: 0 V ~ 200 V On-State Resistance (Max): 8 Ohms |
на замовлення 2440 шт: термін постачання 21-31 дні (днів) |
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TC7SZ04AFS,L3J | Toshiba Semiconductor and Storage |
Description: IC INVERTER 1CH 1-INP FSVPackaging: Tape & Reel (TR) Package / Case: SOT-953 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 1 Supplier Device Package: fSV Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TC7SZ04AFS,L3J | Toshiba Semiconductor and Storage |
Description: IC INVERTER 1CH 1-INP FSVPackaging: Cut Tape (CT) Package / Case: SOT-953 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 1 Supplier Device Package: fSV Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
на замовлення 9612 шт: термін постачання 21-31 дні (днів) |
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2SA2056(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 2A TSMPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 33mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 300mA, 2V Supplier Device Package: TSM Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 625 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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2SA2056(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 2A TSMPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 33mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 300mA, 2V Supplier Device Package: TSM Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 625 mW |
на замовлення 5019 шт: термін постачання 21-31 дні (днів) |
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TC4053BFTEL | Toshiba Semiconductor and Storage |
Description: IC SWITCH SPDTX3 160OHM 16TSSOPPackaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 160Ohm -3db Bandwidth: 30MHz Supplier Device Package: 16-TSSOP Voltage - Supply, Single (V+): 3V ~ 18V Crosstalk: -50dB @ 1.5MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 4Ohm Channel Capacitance (CS(off), CD(off)): 0.2pF, 5pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CTS05F40,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 500MA CST2Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 28pF @ 0V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: CST2 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 810 mV @ 500 mA Current - Reverse Leakage @ Vr: 15 µA @ 40 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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CTS05F40,L3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 500MA CST2Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 28pF @ 0V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: CST2 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 810 mV @ 500 mA Current - Reverse Leakage @ Vr: 15 µA @ 40 V |
на замовлення 12842 шт: термін постачання 21-31 дні (днів) |
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RN1307,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SC70Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SC-70 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN1307,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SC70Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SC-70 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
на замовлення 5850 шт: термін постачання 21-31 дні (днів) |
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RN1309,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SC70Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: SC-70 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN1309,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SC70Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: SC-70 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN1305,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SC70Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SC-70 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN1305,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SC70Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SC-70 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN1403,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SMINIPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RN1403,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SMINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
на замовлення 2692 шт: термін постачання 21-31 дні (днів) |
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CMZ36(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Description: PB-F ZENER DIODE M-FLAT MOQ=3000Tolerance: ±10% Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: M-FLAT (2.4x3.8) Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 28.8 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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CMZ36(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Description: PB-F ZENER DIODE M-FLAT MOQ=3000Tolerance: ±10% Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: M-FLAT (2.4x3.8) Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 28.8 V |
на замовлення 9160 шт: термін постачання 21-31 дні (днів) |
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CRS15(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 3A SFLATPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 90pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 3 A Current - Reverse Leakage @ Vr: 50 µA @ 30 V |
на замовлення 5526 шт: термін постачання 21-31 дні (днів) |
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CRS15I30B(TE85L,QM | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 1.5A SFLATPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 82pF @ 10V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1.5 A Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
на замовлення 5985 шт: термін постачання 21-31 дні (днів) |
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CRS14(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 2A S-FLATPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 90pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 30 V |
на замовлення 3837 шт: термін постачання 21-31 дні (днів) |
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TCR2EF12,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.2V 200MA SMVPackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 1.2V Control Features: Enable PSRR: 73dB (1kHz) Voltage Dropout (Max): 0.57V @ 150mA Protection Features: Over Current |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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74LCX14FT | Toshiba Semiconductor and Storage |
Description: IC INVERTER 6CH 1-INP 14TSSOPFeatures: Schmitt Trigger Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 3.6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 1 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.35V ~ 2.2V Input Logic Level - Low: 0.3V ~ 0.6V Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF Number of Circuits: 6 Current - Quiescent (Max): 10 µA |
на замовлення 4743 шт: термін постачання 21-31 дні (днів) |
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SSM5N16FU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 20V 0.1A USVPackaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 200mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 100µA Supplier Device Package: USV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SSM5N16FU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 20V 0.1A USVPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 200mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 100µA Supplier Device Package: USV |
на замовлення 2995 шт: термін постачання 21-31 дні (днів) |
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RN2302,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SC70Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: SC-70 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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| TC358746AXBG(EL) | Toshiba Semiconductor and Storage |
Description: IC MIPI CSI2 TO PARALLEL Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TC358860XBG(GOH) | Toshiba Semiconductor and Storage |
Description: TC358860XBG(GOH) Packaging: Tape & Reel (TR) Package / Case: 65-TFBGA Mounting Type: Surface Mount Interface: I2C Voltage - Supply: 1.04V ~ 1.16V, 1.1V ~ 1.25V, 1.71V ~ 1.89V Applications: DisplayPort Supplier Device Package: 65-TFBGA (5x5) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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RN2911,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PNPackaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 10kOhms Supplier Device Package: US6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN2911,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PNPackaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 10kOhms Supplier Device Package: US6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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| TCR2LE085,LM(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: LOW DROPOUT (LDO) IOUT: 200MA PD
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 0.85V
Control Features: Enable
Voltage Dropout (Max): 1.58V @ 150mA
Protection Features: Over Current
Description: LOW DROPOUT (LDO) IOUT: 200MA PD
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 0.85V
Control Features: Enable
Voltage Dropout (Max): 1.58V @ 150mA
Protection Features: Over Current
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 5.59 грн |
| TCR2LE085,LM(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: LOW DROPOUT (LDO) IOUT: 200MA PD
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 0.85V
Control Features: Enable
Voltage Dropout (Max): 1.58V @ 150mA
Protection Features: Over Current
Description: LOW DROPOUT (LDO) IOUT: 200MA PD
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 0.85V
Control Features: Enable
Voltage Dropout (Max): 1.58V @ 150mA
Protection Features: Over Current
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 30.88 грн |
| 20+ | 17.34 грн |
| 25+ | 14.17 грн |
| 100+ | 9.93 грн |
| 250+ | 8.27 грн |
| 500+ | 7.24 грн |
| 1000+ | 6.28 грн |
| TCR2EF105,LM(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.05V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.05V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.77V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 1.05V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.05V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.77V @ 150mA
Protection Features: Over Current
товару немає в наявності
В кошику
од. на суму грн.
| TCR2EF105,LM(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.05V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.05V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.77V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 1.05V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.05V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.77V @ 150mA
Protection Features: Over Current
на замовлення 2975 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 29.16 грн |
| 21+ | 16.02 грн |
| 26+ | 13.08 грн |
| 100+ | 9.13 грн |
| 250+ | 7.58 грн |
| 500+ | 6.63 грн |
| 1000+ | 5.73 грн |
| TCR2LE115,LM(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: LOW DROPOUT (LDO) IOUT: 200MA PD
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 1.15V
Control Features: Enable
Voltage Dropout (Max): 1.3V @ 150mA
Protection Features: Over Current
Description: LOW DROPOUT (LDO) IOUT: 200MA PD
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 1.15V
Control Features: Enable
Voltage Dropout (Max): 1.3V @ 150mA
Protection Features: Over Current
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 5.59 грн |
| TCR2LE115,LM(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: LOW DROPOUT (LDO) IOUT: 200MA PD
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 1.15V
Control Features: Enable
Voltage Dropout (Max): 1.3V @ 150mA
Protection Features: Over Current
Description: LOW DROPOUT (LDO) IOUT: 200MA PD
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 1.15V
Control Features: Enable
Voltage Dropout (Max): 1.3V @ 150mA
Protection Features: Over Current
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 30.88 грн |
| 20+ | 17.34 грн |
| 25+ | 14.17 грн |
| 100+ | 9.93 грн |
| 250+ | 8.27 грн |
| 500+ | 7.24 грн |
| 1000+ | 6.28 грн |
| TCR2LE095,LM(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: LOW DROPOUT (LDO) IOUT: 200MA PD
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 0.95V
Control Features: Enable
Voltage Dropout (Max): 1.48V @ 150mA
Protection Features: Over Current
Description: LOW DROPOUT (LDO) IOUT: 200MA PD
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 0.95V
Control Features: Enable
Voltage Dropout (Max): 1.48V @ 150mA
Protection Features: Over Current
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 5.59 грн |
| TCR2LE095,LM(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: LOW DROPOUT (LDO) IOUT: 200MA PD
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 0.95V
Control Features: Enable
Voltage Dropout (Max): 1.48V @ 150mA
Protection Features: Over Current
Description: LOW DROPOUT (LDO) IOUT: 200MA PD
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 0.95V
Control Features: Enable
Voltage Dropout (Max): 1.48V @ 150mA
Protection Features: Over Current
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 30.88 грн |
| 20+ | 17.34 грн |
| 25+ | 14.17 грн |
| 100+ | 9.93 грн |
| 250+ | 8.27 грн |
| 500+ | 7.24 грн |
| 1000+ | 6.28 грн |
| TPH6R008QM,LQ |
Виробник: Toshiba Semiconductor and Storage
Description: 80V UMOS9-H SOP-ADVANCE(N) 6MOHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 29.5A, 10V
Power Dissipation (Max): 3W (Ta), 135W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 400µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
Description: 80V UMOS9-H SOP-ADVANCE(N) 6MOHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 29.5A, 10V
Power Dissipation (Max): 3W (Ta), 135W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 400µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 28.75 грн |
| TPH6R008QM,LQ |
Виробник: Toshiba Semiconductor and Storage
Description: 80V UMOS9-H SOP-ADVANCE(N) 6MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 29.5A, 10V
Power Dissipation (Max): 3W (Ta), 135W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 400µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
Description: 80V UMOS9-H SOP-ADVANCE(N) 6MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 29.5A, 10V
Power Dissipation (Max): 3W (Ta), 135W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 400µA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
на замовлення 9980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 124.36 грн |
| 10+ | 73.59 грн |
| 25+ | 61.61 грн |
| 100+ | 45.05 грн |
| 250+ | 38.77 грн |
| 500+ | 34.89 грн |
| 1000+ | 31.13 грн |
| 2500+ | 27.68 грн |
| TK040N60Z1,S1F |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 52A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 21.2A, 10V
Power Dissipation (Max): 297W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.4mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 300 V
Description: MOSFET N-CH 600V 52A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 21.2A, 10V
Power Dissipation (Max): 297W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.4mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 300 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 710.13 грн |
| 30+ | 404.79 грн |
| TD62503FG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC DRIVER 7/0 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Number of Drivers/Receivers: 7/0
Supplier Device Package: 16-SOP
Description: IC DRIVER 7/0 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Number of Drivers/Receivers: 7/0
Supplier Device Package: 16-SOP
товару немає в наявності
В кошику
од. на суму грн.
| TC74AC04FTEL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1IN 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 6.6ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
Description: IC INVERTER 6CH 1IN 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 6.6ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
на замовлення 989 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 21.44 грн |
| 24+ | 14.12 грн |
| 27+ | 12.52 грн |
| 100+ | 10.11 грн |
| 250+ | 9.31 грн |
| 500+ | 8.84 грн |
| MKZ6V8,LM(B |
Виробник: Toshiba Semiconductor and Storage
Description: 6.8V ZENER DIODE, SOT23 PD (MAX)
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 88pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power - Peak Pulse: 180W
Power Line Protection: No
Description: 6.8V ZENER DIODE, SOT23 PD (MAX)
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 88pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power - Peak Pulse: 180W
Power Line Protection: No
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.76 грн |
| 6000+ | 2.38 грн |
| MKZ6V8,LM(B |
Виробник: Toshiba Semiconductor and Storage
Description: 6.8V ZENER DIODE, SOT23 PD (MAX)
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 88pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power - Peak Pulse: 180W
Power Line Protection: No
Description: 6.8V ZENER DIODE, SOT23 PD (MAX)
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 88pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power - Peak Pulse: 180W
Power Line Protection: No
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 13.72 грн |
| 41+ | 8.18 грн |
| 50+ | 6.71 грн |
| 100+ | 4.71 грн |
| 250+ | 3.92 грн |
| 500+ | 3.43 грн |
| 1000+ | 2.97 грн |
| TMPM4MNFYAFG(DBB) |
Виробник: Toshiba Semiconductor and Storage
Description: MCU, CORTEX M4F, VE, 160MHZ, CAN
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 22x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I2C, SIO, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 87
Description: MCU, CORTEX M4F, VE, 160MHZ, CAN
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 24K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 22x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I2C, SIO, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 87
на замовлення 890 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 913.39 грн |
| 10+ | 602.56 грн |
| 25+ | 530.28 грн |
| 80+ | 431.53 грн |
| 230+ | 396.23 грн |
| TK068N65Z5,S1F |
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Виробник: Toshiba Semiconductor and Storage
Description: 650V DTMOS6-HSD TO-247 68MOHM
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 18.5A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.69mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3765 pF @ 300 V
Description: 650V DTMOS6-HSD TO-247 68MOHM
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 18.5A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.69mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3765 pF @ 300 V
на замовлення 235 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 749.58 грн |
| 30+ | 429.02 грн |
| 120+ | 364.86 грн |
| TB67Z833HFTG(O,EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: 80V 3-PHASE GATE DRIVER,HW INTER
Packaging: Tape & Reel (TR)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8V ~ 75V
Input Type: Non-Inverting
Supplier Device Package: 40-WQFN (6x6)
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 1.5V
Current - Peak Output (Source, Sink): 1A, 2A
Description: 80V 3-PHASE GATE DRIVER,HW INTER
Packaging: Tape & Reel (TR)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8V ~ 75V
Input Type: Non-Inverting
Supplier Device Package: 40-WQFN (6x6)
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 1.5V
Current - Peak Output (Source, Sink): 1A, 2A
товару немає в наявності
В кошику
од. на суму грн.
| TB67Z833HFTG(O,EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: 80V 3-PHASE GATE DRIVER,HW INTER
Packaging: Cut Tape (CT)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8V ~ 75V
Input Type: Non-Inverting
Supplier Device Package: 40-WQFN (6x6)
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 1.5V
Current - Peak Output (Source, Sink): 1A, 2A
Description: 80V 3-PHASE GATE DRIVER,HW INTER
Packaging: Cut Tape (CT)
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8V ~ 75V
Input Type: Non-Inverting
Supplier Device Package: 40-WQFN (6x6)
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 1.5V
Current - Peak Output (Source, Sink): 1A, 2A
на замовлення 3650 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 168.96 грн |
| 10+ | 120.33 грн |
| 25+ | 109.81 грн |
| 100+ | 92.22 грн |
| 250+ | 87.04 грн |
| 500+ | 83.92 грн |
| 1000+ | 80.02 грн |
| TC74HCT240AF(EL,F) |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER INVERT 5.5V 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SOP
Description: IC BUFFER INVERT 5.5V 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SOP
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| MN08ADA600 |
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Виробник: Toshiba Semiconductor and Storage
Description: MN08 NAS 6TB
Packaging: Bulk
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SATA
Form Factor: 3.5"
Description: MN08 NAS 6TB
Packaging: Bulk
Memory Size: 6TB
Memory Type: Magnetic Disk (HDD)
Type: SATA
Form Factor: 3.5"
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| MN08ADA800 |
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Виробник: Toshiba Semiconductor and Storage
Description: MN08 NAS 8TB
Packaging: Bulk
Memory Size: 8TB
Memory Type: Magnetic Disk (HDD)
Type: SATA
Form Factor: 3.5"
Description: MN08 NAS 8TB
Packaging: Bulk
Memory Size: 8TB
Memory Type: Magnetic Disk (HDD)
Type: SATA
Form Factor: 3.5"
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| TC74HC153AF(EL,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC DATA SELECT/MUX 2X4:1 16-SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 4:1
Type: Data Selector/Multiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOP
Description: IC DATA SELECT/MUX 2X4:1 16-SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 4:1
Type: Data Selector/Multiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOP
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| TC78S600FTG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: STEPPER MOTOR DRIVER IC, 18V/1.0
Packaging: Cut Tape (CT)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -20°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 2.5V ~ 15V
Supplier Device Package: 24-WQFN (4x4)
Motor Type - Stepper: Bipolar
Step Resolution: 1/2, 1/4, 1/8, 1/16
Description: STEPPER MOTOR DRIVER IC, 18V/1.0
Packaging: Cut Tape (CT)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -20°C ~ 85°C
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 2.5V ~ 15V
Supplier Device Package: 24-WQFN (4x4)
Motor Type - Stepper: Bipolar
Step Resolution: 1/2, 1/4, 1/8, 1/16
на замовлення 4398 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 199.83 грн |
| 10+ | 120.74 грн |
| 25+ | 101.98 грн |
| 100+ | 75.86 грн |
| 250+ | 66.11 грн |
| 500+ | 60.11 грн |
| 1000+ | 54.18 грн |
| 2500+ | 48.86 грн |
| TC4081BF(EL,N,F) |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
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| TC4081BF(EL,N,F) |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 4CH 2-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 4CH 2-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
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| TRS20N120HB,S1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SIC 1200V 32A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 32A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Description: DIODE ARRAY SIC 1200V 32A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 32A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
на замовлення 58 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1066.91 грн |
| 30+ | 673.92 грн |
| TRS15N120HB,S1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SIC 1200V 25A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 7.5 A
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
Description: DIODE ARRAY SIC 1200V 25A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 7.5 A
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 749.58 грн |
| 30+ | 565.59 грн |
| TLP171D(TP,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 200MA 0-200V
Packaging: Tape & Reel (TR)
Package / Case: 4-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 200 mA
Approval Agency: cUL, UL, VDE
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
Description: SSR RELAY SPST-NO 200MA 0-200V
Packaging: Tape & Reel (TR)
Package / Case: 4-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 200 mA
Approval Agency: cUL, UL, VDE
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
на замовлення 2440 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TLP171D(TP,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 200MA 0-200V
Packaging: Cut Tape (CT)
Package / Case: 4-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 200 mA
Approval Agency: cUL, UL, VDE
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
Description: SSR RELAY SPST-NO 200MA 0-200V
Packaging: Cut Tape (CT)
Package / Case: 4-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 200 mA
Approval Agency: cUL, UL, VDE
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
на замовлення 2440 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 119.21 грн |
| 10+ | 102.24 грн |
| 25+ | 97.72 грн |
| 50+ | 88.57 грн |
| 100+ | 85.54 грн |
| 250+ | 81.68 грн |
| 500+ | 77.59 грн |
| 1000+ | 74.92 грн |
| TC7SZ04AFS,L3J |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: fSV
Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC INVERTER 1CH 1-INP FSV
Packaging: Tape & Reel (TR)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: fSV
Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
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| TC7SZ04AFS,L3J |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP FSV
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: fSV
Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC INVERTER 1CH 1-INP FSV
Packaging: Cut Tape (CT)
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: fSV
Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
на замовлення 9612 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 29.16 грн |
| 20+ | 16.85 грн |
| 25+ | 13.78 грн |
| 100+ | 9.63 грн |
| 250+ | 8.02 грн |
| 500+ | 7.03 грн |
| 1000+ | 6.09 грн |
| 2500+ | 5.20 грн |
| 5000+ | 4.66 грн |
| 2SA2056(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TSM
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 33mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 300mA, 2V
Supplier Device Package: TSM
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Description: TRANS PNP 50V 2A TSM
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 33mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 300mA, 2V
Supplier Device Package: TSM
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.43 грн |
| 2SA2056(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TSM
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 33mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 300mA, 2V
Supplier Device Package: TSM
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Description: TRANS PNP 50V 2A TSM
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 33mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 300mA, 2V
Supplier Device Package: TSM
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
на замовлення 5019 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.88 грн |
| 13+ | 25.52 грн |
| 100+ | 16.30 грн |
| 500+ | 11.54 грн |
| 1000+ | 10.33 грн |
| TC4053BFTEL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC SWITCH SPDTX3 160OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
-3db Bandwidth: 30MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 18V
Crosstalk: -50dB @ 1.5MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 4Ohm
Channel Capacitance (CS(off), CD(off)): 0.2pF, 5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 3
Description: IC SWITCH SPDTX3 160OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
-3db Bandwidth: 30MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 18V
Crosstalk: -50dB @ 1.5MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 4Ohm
Channel Capacitance (CS(off), CD(off)): 0.2pF, 5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 3
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| CTS05F40,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 500MA CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 28pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: CST2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 500 mA
Current - Reverse Leakage @ Vr: 15 µA @ 40 V
Description: DIODE SCHOTTKY 40V 500MA CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 28pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: CST2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 500 mA
Current - Reverse Leakage @ Vr: 15 µA @ 40 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 3.23 грн |
| CTS05F40,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 500MA CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 28pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: CST2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 500 mA
Current - Reverse Leakage @ Vr: 15 µA @ 40 V
Description: DIODE SCHOTTKY 40V 500MA CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 28pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: CST2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 500 mA
Current - Reverse Leakage @ Vr: 15 µA @ 40 V
на замовлення 12842 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 18.01 грн |
| 33+ | 10.08 грн |
| 100+ | 6.42 грн |
| 500+ | 4.42 грн |
| 1000+ | 3.78 грн |
| 2000+ | 3.46 грн |
| 5000+ | 2.93 грн |
| RN1307,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.27 грн |
| RN1307,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 5850 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.87 грн |
| 23+ | 14.87 грн |
| 100+ | 9.32 грн |
| 500+ | 6.48 грн |
| 1000+ | 5.74 грн |
| RN1309,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.85 грн |
| RN1309,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.87 грн |
| 23+ | 14.87 грн |
| 100+ | 9.32 грн |
| 500+ | 6.48 грн |
| 1000+ | 5.74 грн |
| RN1305,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.32 грн |
| RN1305,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.87 грн |
| 23+ | 14.87 грн |
| 100+ | 9.32 грн |
| 500+ | 6.48 грн |
| 1000+ | 5.74 грн |
| RN1403,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
товару немає в наявності
В кошику
од. на суму грн.
| RN1403,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 2692 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 15.44 грн |
| 37+ | 9.00 грн |
| 100+ | 5.57 грн |
| 500+ | 3.81 грн |
| 1000+ | 3.35 грн |
| CMZ36(TE12L,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: PB-F ZENER DIODE M-FLAT MOQ=3000
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 28.8 V
Description: PB-F ZENER DIODE M-FLAT MOQ=3000
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 28.8 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 16.59 грн |
| 6000+ | 14.87 грн |
| 9000+ | 13.90 грн |
| CMZ36(TE12L,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: PB-F ZENER DIODE M-FLAT MOQ=3000
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 28.8 V
Description: PB-F ZENER DIODE M-FLAT MOQ=3000
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: M-FLAT (2.4x3.8)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 28.8 V
на замовлення 9160 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 71.18 грн |
| 10+ | 42.95 грн |
| 100+ | 27.96 грн |
| 500+ | 20.19 грн |
| 1000+ | 18.23 грн |
| CRS15(TE85L,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 3A SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Description: DIODE SCHOTTKY 30V 3A SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
на замовлення 5526 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 44.60 грн |
| 13+ | 27.17 грн |
| 100+ | 19.42 грн |
| 500+ | 13.81 грн |
| 1000+ | 12.38 грн |
| CRS15I30B(TE85L,QM |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1.5A SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1.5A SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
на замовлення 5985 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 40.31 грн |
| 14+ | 24.86 грн |
| 100+ | 17.70 грн |
| 500+ | 12.54 грн |
| 1000+ | 11.22 грн |
| CRS14(TE85L,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 2A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Description: DIODE SCHOTTKY 30V 2A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
на замовлення 3837 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.60 грн |
| 11+ | 30.23 грн |
| 100+ | 19.33 грн |
| 500+ | 13.73 грн |
| 1000+ | 12.31 грн |
| TCR2EF12,LM(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.2V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.57V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 1.2V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.57V @ 150mA
Protection Features: Over Current
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.37 грн |
| 74LCX14FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14TSSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.35V ~ 2.2V
Input Logic Level - Low: 0.3V ~ 0.6V
Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
Description: IC INVERTER 6CH 1-INP 14TSSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.35V ~ 2.2V
Input Logic Level - Low: 0.3V ~ 0.6V
Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
на замовлення 4743 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 46.31 грн |
| 12+ | 27.67 грн |
| 25+ | 22.99 грн |
| 100+ | 16.62 грн |
| 250+ | 14.16 грн |
| 500+ | 12.66 грн |
| 1000+ | 11.21 грн |
| SSM5N16FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.1A USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: USV
Description: MOSFET 2N-CH 20V 0.1A USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: USV
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| SSM5N16FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.1A USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: USV
Description: MOSFET 2N-CH 20V 0.1A USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: USV
на замовлення 2995 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 27.44 грн |
| 21+ | 16.27 грн |
| 100+ | 10.20 грн |
| 500+ | 7.11 грн |
| 1000+ | 6.31 грн |
| RN2302,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 15.44 грн |
| 37+ | 9.00 грн |
| 100+ | 5.56 грн |
| 500+ | 3.81 грн |
| 1000+ | 3.35 грн |
| TC358746AXBG(EL) |
Виробник: Toshiba Semiconductor and Storage
Description: IC MIPI CSI2 TO PARALLEL
Packaging: Tape & Reel (TR)
Description: IC MIPI CSI2 TO PARALLEL
Packaging: Tape & Reel (TR)
товару немає в наявності
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| TC358860XBG(GOH) |
Виробник: Toshiba Semiconductor and Storage
Description: TC358860XBG(GOH)
Packaging: Tape & Reel (TR)
Package / Case: 65-TFBGA
Mounting Type: Surface Mount
Interface: I2C
Voltage - Supply: 1.04V ~ 1.16V, 1.1V ~ 1.25V, 1.71V ~ 1.89V
Applications: DisplayPort
Supplier Device Package: 65-TFBGA (5x5)
Description: TC358860XBG(GOH)
Packaging: Tape & Reel (TR)
Package / Case: 65-TFBGA
Mounting Type: Surface Mount
Interface: I2C
Voltage - Supply: 1.04V ~ 1.16V, 1.1V ~ 1.25V, 1.71V ~ 1.89V
Applications: DisplayPort
Supplier Device Package: 65-TFBGA (5x5)
товару немає в наявності
В кошику
од. на суму грн.
| RN2911,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.07 грн |
| 6000+ | 5.28 грн |
| RN2911,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: US6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 28.30 грн |
| 20+ | 16.85 грн |
| 100+ | 10.56 грн |
| 500+ | 7.36 грн |
| 1000+ | 6.54 грн |





















