Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13580) > Сторінка 219 з 227
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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CMS09(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 1A M-FLATPackaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 70pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
на замовлення 2946 шт: термін постачання 21-31 дні (днів) |
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TC7WH32FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC GATE OR 2CH 2-INP 8SSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 8-SSOP Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 2 Current - Quiescent (Max): 2 µA |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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TC7WH32FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC GATE OR 2CH 2-INP 8SSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 8-SSOP Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 2 Current - Quiescent (Max): 2 µA |
на замовлення 9302 шт: термін постачання 21-31 дні (днів) |
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TB67S149AFTG,EL | Toshiba Semiconductor and Storage |
Description: UNIPOLAR STEPPER MOTOR DRIVER, 8Motor Type - Stepper: Unipolar Supplier Device Package: 48-WQFN (7x7) Voltage - Load: 10V ~ 40V Technology: NMOS Applications: General Purpose Voltage - Supply: 4.75V ~ 5.25V Output Configuration: Half Bridge (2) Operating Temperature: -40°C ~ 85°C Interface: On/Off Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Surface Mount Package / Case: 48-WFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
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TB67S149AFTG,EL | Toshiba Semiconductor and Storage |
Description: UNIPOLAR STEPPER MOTOR DRIVER, 8Motor Type - Stepper: Unipolar Supplier Device Package: 48-WQFN (7x7) Voltage - Load: 10V ~ 40V Technology: NMOS Applications: General Purpose Voltage - Supply: 4.75V ~ 5.25V Output Configuration: Half Bridge (2) Operating Temperature: -40°C ~ 85°C Interface: On/Off Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Surface Mount Package / Case: 48-WFQFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 3898 шт: термін постачання 21-31 дні (днів) |
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XPQR8308QB,LXHQ | Toshiba Semiconductor and Storage |
Description: 80V UMOS10 L-TOGL 0.83MOHMPackaging: Tape & Reel (TR) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350A (Ta) Rds On (Max) @ Id, Vgs: 0.83mOhm @ 175A, 10V Power Dissipation (Max): 750W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 3.2mA Supplier Device Package: L-TOGL™ Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24700 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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XPQR8308QB,LXHQ | Toshiba Semiconductor and Storage |
Description: 80V UMOS10 L-TOGL 0.83MOHMPackaging: Cut Tape (CT) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350A (Ta) Rds On (Max) @ Id, Vgs: 0.83mOhm @ 175A, 10V Power Dissipation (Max): 750W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 3.2mA Supplier Device Package: L-TOGL™ Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24700 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 1953 шт: термін постачання 21-31 дні (днів) |
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TLP171A(TP,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 400MA 0-60VPackaging: Tape & Reel (TR) Package / Case: 4-SOP (0.173", 4.40mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 85°C Termination Style: Gull Wing Load Current: 400 mA Approval Agency: cUL, UL, VDE Supplier Device Package: 4-SOP Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 2 Ohms Relay Type: Photo-Coupled Relay (Photorelay) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLP171A(TP,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 400MA 0-60VPackaging: Cut Tape (CT) Package / Case: 4-SOP (0.173", 4.40mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 85°C Termination Style: Gull Wing Load Current: 400 mA Approval Agency: cUL, UL, VDE Supplier Device Package: 4-SOP Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 2 Ohms Relay Type: Photo-Coupled Relay (Photorelay) |
на замовлення 4423 шт: термін постачання 21-31 дні (днів) |
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TC7WH125FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC BUFF 2V/5.5V 8-SSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 8-SSOP |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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TC7WH125FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC BUFF 2V/5.5V 8-SSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 8-SSOP |
на замовлення 1757 шт: термін постачання 21-31 дні (днів) |
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| TB9083FTG(EL) | Toshiba Semiconductor and Storage |
Description: AEC-Q100 3-PHASE BLDC GATE DRV 4Packaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Function: Controller - Current Management Interface: SPI Operating Temperature: -40°C ~ 150°C (TA) Output Configuration: Half Bridge (3) Voltage - Supply: 3V ~ 5.5V, 4.5V ~ 28V Applications: General Purpose Technology: Power MOSFET Supplier Device Package: 48-VQFN (7x7) Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| TB9083FTG(EL) | Toshiba Semiconductor and Storage |
Description: AEC-Q100 3-PHASE BLDC GATE DRV 4Packaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Function: Controller - Current Management Interface: SPI Operating Temperature: -40°C ~ 150°C (TA) Output Configuration: Half Bridge (3) Voltage - Supply: 3V ~ 5.5V, 4.5V ~ 28V Applications: General Purpose Technology: Power MOSFET Supplier Device Package: 48-VQFN (7x7) Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3008 шт: термін постачання 21-31 дні (днів) |
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DF2B7AFU,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 20VC USCPackaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 8.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: USC Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 80W Power Line Protection: No |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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DF2B7AFU,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 20VC USCPackaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 8.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: USC Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 80W Power Line Protection: No |
на замовлення 20990 шт: термін постачання 21-31 дні (днів) |
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DF2B7AE,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 20VC ESCPackaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 8.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: ESC Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 80W Power Line Protection: No |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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DF2B7AE,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 20VC ESCPackaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 8.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: ESC Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 80W Power Line Protection: No |
на замовлення 10852 шт: термін постачання 21-31 дні (днів) |
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TRS20H120H,S1Q | Toshiba Semiconductor and Storage |
Description: DIODE SIL CARB 1200V 61A TO2472LCurrent - Reverse Leakage @ Vr: 130 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: 175°C Supplier Device Package: TO-247-2L Current - Average Rectified (Io): 61A Capacitance @ Vr, F: 2070pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-2 Packaging: Tube |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
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RN4906FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETRPackaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz, 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RN4906FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETRPackaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz, 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7868 шт: термін постачання 21-31 дні (днів) |
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SSM3J66MFV,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 800MA VESMPackaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: VESM Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): +6V, -8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||||
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SSM3J66MFV,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 800MA VESMPackaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: VESM Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): +6V, -8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V |
на замовлення 6611 шт: термін постачання 21-31 дні (днів) |
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TCR3DM18,RF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG IOUT: 300MA VIN: 6V VOUTPackaging: Tape & Reel (TR) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Voltage Dropout (Max): 0.38V @ 300mA Protection Features: Over Current, Over Temperature |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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TCR3DM18,RF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG IOUT: 300MA VIN: 6V VOUTPackaging: Cut Tape (CT) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Voltage Dropout (Max): 0.38V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 2675 шт: термін постачання 21-31 дні (днів) |
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TJ20S04M3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 20A DPAKInput Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +10V, -20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: DPAK+ Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 41W (Tc) Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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TJ20S04M3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 20A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V Power Dissipation (Max): 41W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V |
на замовлення 1067 шт: термін постачання 21-31 дні (днів) |
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RN2410,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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RN2410,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms |
на замовлення 200 шт: термін постачання 21-31 дні (днів) |
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RN2410,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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RN2410,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SMINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: S-Mini Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| TC74HC21AF(EL,F) | Toshiba Semiconductor and Storage |
Description: IC GATE AND 2CH 4-INP 14SOICPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 4 Supplier Device Package: 14-SOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Number of Circuits: 2 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TRS10N120HB,S1Q | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY SIC 1200V 18A TO-247Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 5 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: 175°C Supplier Device Package: TO-247 Current - Average Rectified (Io) (per Diode): 18A Diode Configuration: 1 Pair Common Cathode Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
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DF5A6.8LJE,LM | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM ESVPackaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 6pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: ESV Unidirectional Channels: 4 Voltage - Breakdown (Min): 6.5V Power Line Protection: No |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
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DF5A6.8LJE,LM | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM ESVPackaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 6pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: ESV Unidirectional Channels: 4 Voltage - Breakdown (Min): 6.5V Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLP3083F(D4,TP4F | Toshiba Semiconductor and Storage |
Description: PHOTOTRIAC; ZVC; WIDE CREEPAGE;Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Gull Wing, 5 Leads Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Voltage - Isolation: 5000Vrms Approval Agency: CQC, CSA, cUL, UL, VDE Current - Hold (Ih): 600µA Supplier Device Package: 6-SMD Zero Crossing Circuit: Yes Static dV/dt (Min): 2kV/µs (Typ) Current - LED Trigger (Ift) (Max): 5mA Number of Channels: 1 Current - On State (It (RMS)) (Max): 100 mA Voltage - Off State: 800 V Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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TLP3083F(D4,TP4F | Toshiba Semiconductor and Storage |
Description: PHOTOTRIAC; ZVC; WIDE CREEPAGE;Current - DC Forward (If) (Max): 50 mA Voltage - Off State: 800 V Current - On State (It (RMS)) (Max): 100 mA Number of Channels: 1 Current - LED Trigger (Ift) (Max): 5mA Static dV/dt (Min): 2kV/µs (Typ) Zero Crossing Circuit: Yes Supplier Device Package: 6-SMD Current - Hold (Ih): 600µA Approval Agency: CQC, CSA, cUL, UL, VDE Voltage - Isolation: 5000Vrms Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Triac Package / Case: 6-SMD, Gull Wing, 5 Leads Packaging: Cut Tape (CT) |
на замовлення 975 шт: термін постачання 21-31 дні (днів) |
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TLP3083F(D4,LF4F | Toshiba Semiconductor and Storage |
Description: PHOTOTRIAC; ZVC; WIDE CREEPAGE;Current - DC Forward (If) (Max): 50 mA Voltage - Off State: 800 V Current - On State (It (RMS)) (Max): 100 mA Number of Channels: 1 Current - LED Trigger (Ift) (Max): 5mA Static dV/dt (Min): 2kV/µs (Typ) Zero Crossing Circuit: Yes Supplier Device Package: 6-SMD Current - Hold (Ih): 600µA Approval Agency: CQC, CSA, cUL, UL, VDE Voltage - Isolation: 5000Vrms Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Triac Package / Case: 6-SMD, Gull Wing, 5 Leads Packaging: Tube |
на замовлення 47 шт: термін постачання 21-31 дні (днів) |
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TLP3083F(D4,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERCurrent - DC Forward (If) (Max): 50 mA Voltage - Off State: 800 V Current - On State (It (RMS)) (Max): 100 mA Number of Channels: 1 Current - LED Trigger (Ift) (Max): 5mA Static dV/dt (Min): 2kV/µs (Typ) Zero Crossing Circuit: Yes Supplier Device Package: 6-DIP Current - Hold (Ih): 600µA Approval Agency: CQC, CSA, cUL, UL, VDE Voltage - Isolation: 5000Vrms Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -40°C ~ 100°C Mounting Type: Through Hole Output Type: Triac Package / Case: 6-DIP (0.400", 10.16mm), 5 Leads Packaging: Tube |
на замовлення 23 шт: термін постачання 21-31 дні (днів) |
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| TC74ACT04FTEL | Toshiba Semiconductor and Storage |
Description: IC INVERTER 6CH 1IN 14TSSOP Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 24mA, 24mA Number of Inputs: 1 Supplier Device Package: 14-TSSOP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Number of Circuits: 6 Current - Quiescent (Max): 4 µA |
на замовлення 1444 шт: термін постачання 21-31 дні (днів) |
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TC74VHC14FK(EL,K) | Toshiba Semiconductor and Storage |
Description: IC INVERTER 6CH 1-INP 14VSSOPFeatures: Schmitt Trigger Packaging: Cut Tape (CT) Package / Case: 14-VFSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: 14-VSSOP Input Logic Level - High: 2.2V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF Number of Circuits: 6 Current - Quiescent (Max): 2 µA |
на замовлення 1979 шт: термін постачання 21-31 дні (днів) |
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XPH1R104PS,L1XHQ | Toshiba Semiconductor and Storage |
Description: 40V UMOS9-H SOP ADVANCEQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Grade: Automotive Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 3V @ 500µA Power Dissipation (Max): 3W (Ta), 132W (Tc) Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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XPH1R104PS,L1XHQ | Toshiba Semiconductor and Storage |
Description: 40V UMOS9-H SOP ADVANCEQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Grade: Automotive Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 3V @ 500µA Power Dissipation (Max): 3W (Ta), 132W (Tc) Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 4750 шт: термін постачання 21-31 дні (днів) |
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TCK1024G,LF | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6EFeatures: Load Discharge Packaging: Tape & Reel (TR) Package / Case: 6-UFBGA, WLCSP Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 31mOhm Input Type: Non-Inverting Voltage - Load: 1.4V ~ 5.5V Current - Output (Max): 1.54A Ratio - Input:Output: 1:1 Supplier Device Package: 6-WCSPE (0.80x1.2) Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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TCK1024G,LF | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6EFeatures: Load Discharge Packaging: Cut Tape (CT) Package / Case: 6-UFBGA, WLCSP Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 31mOhm Input Type: Non-Inverting Voltage - Load: 1.4V ~ 5.5V Current - Output (Max): 1.54A Ratio - Input:Output: 1:1 Supplier Device Package: 6-WCSPE (0.80x1.2) Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current |
на замовлення 4448 шт: термін постачання 21-31 дні (днів) |
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XCUZ30V,H3XHF(B | Toshiba Semiconductor and Storage |
Description: TVS DIODE 23VWM 47.5VC USCQualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 47.5V (Typ) Voltage - Breakdown (Min): 28V Unidirectional Channels: 1 Supplier Device Package: USC Voltage - Reverse Standoff (Typ): 23V (Max) Current - Peak Pulse (10/1000µs): 4A (8/20µs) Capacitance @ Frequency: 21pF @ 1MHz Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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XCUZ30V,H3XHF(B | Toshiba Semiconductor and Storage |
Description: TVS DIODE 23VWM 47.5VC USCQualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 200W Voltage - Clamping (Max) @ Ipp: 47.5V (Typ) Voltage - Breakdown (Min): 28V Unidirectional Channels: 1 Supplier Device Package: USC Voltage - Reverse Standoff (Typ): 23V (Max) Current - Peak Pulse (10/1000µs): 4A (8/20µs) Capacitance @ Frequency: 21pF @ 1MHz Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Cut Tape (CT) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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2SC4213-A(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS NPN 20V 0.3A SC-70Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 300 mA Supplier Device Package: SC-70 Frequency - Transition: 30MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A Operating Temperature: 125°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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XCUZ6V2,H3XHF(B | Toshiba Semiconductor and Storage |
Description: 6.2 V ZENER DIODEAEC-Q, SOD-323(Qualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 175W Voltage - Clamping (Max) @ Ipp: 10V (Typ) Voltage - Breakdown (Min): 5.8V Unidirectional Channels: 1 Supplier Device Package: USC Voltage - Reverse Standoff (Typ): 3V (Max) Current - Peak Pulse (10/1000µs): 11A (8/20µs) Capacitance @ Frequency: 105pF @ 1MHz Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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XCUZ6V2,H3XHF(B | Toshiba Semiconductor and Storage |
Description: 6.2 V ZENER DIODEAEC-Q, SOD-323(Qualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 175W Voltage - Clamping (Max) @ Ipp: 10V (Typ) Voltage - Breakdown (Min): 5.8V Unidirectional Channels: 1 Supplier Device Package: USC Voltage - Reverse Standoff (Typ): 3V (Max) Current - Peak Pulse (10/1000µs): 11A (8/20µs) Capacitance @ Frequency: 105pF @ 1MHz Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Cut Tape (CT) |
на замовлення 5960 шт: термін постачання 21-31 дні (днів) |
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TLP620M(BL-TP5,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
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TLP620M(D4BLT5,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIPPackaging: Tape & Reel (TR) Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
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TLP620M(D4-TP5,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
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TLP620M(D4BLT1,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIPPackaging: Tape & Reel (TR) Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
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TLP620M(D4GBT5,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIPPackaging: Tape & Reel (TR) Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
| TLP620M(D4GRT5,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP Packaging: Tape & Reel (TR) Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||||
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TLP620M(D4GRT1,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIPPackaging: Tape & Reel (TR) Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
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TLP620M(GR-TP1,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMDPackaging: Tape & Reel (TR) Package / Case: 4-SMD (0.300", 7.62mm) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
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TLP620M(D4Y-T1,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIPPackaging: Tape & Reel (TR) Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
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TLP620M(D4GBT1,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIPPackaging: Tape & Reel (TR) Package / Case: 4-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-DIP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
| TLP620M(BL-TP1,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD Packaging: Tape & Reel (TR) Package / Case: 4-SMD (0.300", 7.62mm) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. |
| CMS09(TE12L,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1A M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A M-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
на замовлення 2946 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.81 грн |
| 11+ | 28.53 грн |
| 100+ | 18.27 грн |
| 500+ | 12.99 грн |
| 1000+ | 11.65 грн |
| TC7WH32FU,LJ(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE OR 2CH 2-INP 8SSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
Description: IC GATE OR 2CH 2-INP 8SSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.21 грн |
| 6000+ | 4.86 грн |
| 9000+ | 4.78 грн |
| TC7WH32FU,LJ(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE OR 2CH 2-INP 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
Description: IC GATE OR 2CH 2-INP 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
на замовлення 9302 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.32 грн |
| 35+ | 8.68 грн |
| 40+ | 7.61 грн |
| 100+ | 6.09 грн |
| 250+ | 5.58 грн |
| 500+ | 5.27 грн |
| 1000+ | 4.94 грн |
| TB67S149AFTG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: UNIPOLAR STEPPER MOTOR DRIVER, 8
Motor Type - Stepper: Unipolar
Supplier Device Package: 48-WQFN (7x7)
Voltage - Load: 10V ~ 40V
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 85°C
Interface: On/Off
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-WFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: UNIPOLAR STEPPER MOTOR DRIVER, 8
Motor Type - Stepper: Unipolar
Supplier Device Package: 48-WQFN (7x7)
Voltage - Load: 10V ~ 40V
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 85°C
Interface: On/Off
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-WFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| TB67S149AFTG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: UNIPOLAR STEPPER MOTOR DRIVER, 8
Motor Type - Stepper: Unipolar
Supplier Device Package: 48-WQFN (7x7)
Voltage - Load: 10V ~ 40V
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 85°C
Interface: On/Off
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-WFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: UNIPOLAR STEPPER MOTOR DRIVER, 8
Motor Type - Stepper: Unipolar
Supplier Device Package: 48-WQFN (7x7)
Voltage - Load: 10V ~ 40V
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 85°C
Interface: On/Off
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-WFQFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 3898 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 225.74 грн |
| 10+ | 162.88 грн |
| 25+ | 149.42 грн |
| 100+ | 126.28 грн |
| 250+ | 119.64 грн |
| 500+ | 115.64 грн |
| 1000+ | 110.50 грн |
| XPQR8308QB,LXHQ |
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Виробник: Toshiba Semiconductor and Storage
Description: 80V UMOS10 L-TOGL 0.83MOHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350A (Ta)
Rds On (Max) @ Id, Vgs: 0.83mOhm @ 175A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.2mA
Supplier Device Package: L-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24700 pF @ 10 V
Qualification: AEC-Q101
Description: 80V UMOS10 L-TOGL 0.83MOHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350A (Ta)
Rds On (Max) @ Id, Vgs: 0.83mOhm @ 175A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.2mA
Supplier Device Package: L-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24700 pF @ 10 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 170.04 грн |
| XPQR8308QB,LXHQ |
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Виробник: Toshiba Semiconductor and Storage
Description: 80V UMOS10 L-TOGL 0.83MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350A (Ta)
Rds On (Max) @ Id, Vgs: 0.83mOhm @ 175A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.2mA
Supplier Device Package: L-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24700 pF @ 10 V
Qualification: AEC-Q101
Description: 80V UMOS10 L-TOGL 0.83MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350A (Ta)
Rds On (Max) @ Id, Vgs: 0.83mOhm @ 175A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.2mA
Supplier Device Package: L-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24700 pF @ 10 V
Qualification: AEC-Q101
на замовлення 1953 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 460.10 грн |
| 10+ | 297.54 грн |
| 100+ | 214.98 грн |
| 500+ | 188.08 грн |
| TLP171A(TP,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 400 mA
Approval Agency: cUL, UL, VDE
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2 Ohms
Relay Type: Photo-Coupled Relay (Photorelay)
Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 400 mA
Approval Agency: cUL, UL, VDE
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2 Ohms
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 83.34 грн |
| TLP171A(TP,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 400 mA
Approval Agency: cUL, UL, VDE
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2 Ohms
Relay Type: Photo-Coupled Relay (Photorelay)
Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 400 mA
Approval Agency: cUL, UL, VDE
Supplier Device Package: 4-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2 Ohms
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 4423 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 123.06 грн |
| 10+ | 105.90 грн |
| 25+ | 101.20 грн |
| 50+ | 91.72 грн |
| 100+ | 88.58 грн |
| 250+ | 84.59 грн |
| 500+ | 80.34 грн |
| 1000+ | 77.59 грн |
| TC7WH125FU,LJ(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFF 2V/5.5V 8-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 8-SSOP
Description: IC BUFF 2V/5.5V 8-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 8-SSOP
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TC7WH125FU,LJ(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFF 2V/5.5V 8-SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 8-SSOP
Description: IC BUFF 2V/5.5V 8-SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 8-SSOP
на замовлення 1757 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.32 грн |
| 35+ | 8.68 грн |
| 40+ | 7.61 грн |
| 100+ | 6.09 грн |
| 250+ | 5.58 грн |
| 500+ | 5.27 грн |
| 1000+ | 4.94 грн |
| TB9083FTG(EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: AEC-Q100 3-PHASE BLDC GATE DRV 4
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Controller - Current Management
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 5.5V, 4.5V ~ 28V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
Description: AEC-Q100 3-PHASE BLDC GATE DRV 4
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Controller - Current Management
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 5.5V, 4.5V ~ 28V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 306.90 грн |
| TB9083FTG(EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: AEC-Q100 3-PHASE BLDC GATE DRV 4
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Controller - Current Management
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 5.5V, 4.5V ~ 28V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
Description: AEC-Q100 3-PHASE BLDC GATE DRV 4
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Controller - Current Management
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 5.5V, 4.5V ~ 28V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: 48-VQFN (7x7)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3008 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 685.05 грн |
| 10+ | 445.85 грн |
| 25+ | 390.22 грн |
| 100+ | 307.20 грн |
| 250+ | 278.22 грн |
| 500+ | 277.35 грн |
| DF2B7AFU,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 20VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 20VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.99 грн |
| 9000+ | 2.42 грн |
| DF2B7AFU,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 20VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 20VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
на замовлення 20990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 14.89 грн |
| 35+ | 8.76 грн |
| 50+ | 6.26 грн |
| 100+ | 5.11 грн |
| 500+ | 3.72 грн |
| DF2B7AE,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 20VC ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: ESC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 20VC ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: ESC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 2.56 грн |
| DF2B7AE,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 20VC ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: ESC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 20VC ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: ESC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 80W
Power Line Protection: No
на замовлення 10852 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 14.89 грн |
| 35+ | 8.76 грн |
| 50+ | 6.26 грн |
| 100+ | 5.11 грн |
| 500+ | 3.72 грн |
| TRS20H120H,S1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 1200V 61A TO2472L
Current - Reverse Leakage @ Vr: 130 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247-2L
Current - Average Rectified (Io): 61A
Capacitance @ Vr, F: 2070pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Description: DIODE SIL CARB 1200V 61A TO2472L
Current - Reverse Leakage @ Vr: 130 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247-2L
Current - Average Rectified (Io): 61A
Capacitance @ Vr, F: 2070pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 882.58 грн |
| 30+ | 669.82 грн |
| RN4906FE,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 5.89 грн |
| RN4906FE,LXHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7868 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.00 грн |
| 18+ | 17.44 грн |
| 100+ | 10.94 грн |
| 500+ | 7.65 грн |
| 1000+ | 6.80 грн |
| 2000+ | 6.09 грн |
| SSM3J66MFV,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 800MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
Description: MOSFET P-CH 20V 800MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| SSM3J66MFV,L3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 800MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
Description: MOSFET P-CH 20V 800MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
на замовлення 6611 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 21.95 грн |
| 24+ | 12.91 грн |
| 100+ | 8.08 грн |
| 500+ | 5.61 грн |
| 1000+ | 4.97 грн |
| 2000+ | 4.43 грн |
| TCR3DM18,RF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Voltage Dropout (Max): 0.38V @ 300mA
Protection Features: Over Current, Over Temperature
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Voltage Dropout (Max): 0.38V @ 300mA
Protection Features: Over Current, Over Temperature
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| TCR3DM18,RF(SE |
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Виробник: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Voltage Dropout (Max): 0.38V @ 300mA
Protection Features: Over Current, Over Temperature
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Voltage Dropout (Max): 0.38V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 2675 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 38.41 грн |
| 14+ | 22.19 грн |
| 25+ | 18.21 грн |
| 100+ | 12.84 грн |
| 250+ | 10.76 грн |
| 500+ | 9.48 грн |
| 1000+ | 8.26 грн |
| 2500+ | 7.12 грн |
| TJ20S04M3L(T6L1,NQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 20A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 40V 20A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| TJ20S04M3L(T6L1,NQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 20A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
Description: MOSFET P-CH 40V 20A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
на замовлення 1067 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 132.46 грн |
| 10+ | 81.29 грн |
| 100+ | 54.76 грн |
| 500+ | 40.70 грн |
| 1000+ | 37.26 грн |
| RN2410,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RN2410,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.76 грн |
| 44+ | 6.94 грн |
| 100+ | 4.27 грн |
| RN2410,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
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Мінімальне замовлення: 3000 шт
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| RN2410,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
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| TC74HC21AF(EL,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 2CH 4-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 4
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 2CH 4-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 4
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
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| TRS10N120HB,S1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SIC 1200V 18A TO-247
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247
Current - Average Rectified (Io) (per Diode): 18A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE ARRAY SIC 1200V 18A TO-247
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247
Current - Average Rectified (Io) (per Diode): 18A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 649.00 грн |
| 30+ | 412.06 грн |
| DF5A6.8LJE,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.5V
Power Line Protection: No
Description: TVS DIODE 5VWM ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.5V
Power Line Protection: No
товару немає в наявності
Мінімальне замовлення: 4000 шт
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| DF5A6.8LJE,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.5V
Power Line Protection: No
Description: TVS DIODE 5VWM ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.5V
Power Line Protection: No
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| TLP3083F(D4,TP4F |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOTRIAC; ZVC; WIDE CREEPAGE;
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing, 5 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 50 mA
Description: PHOTOTRIAC; ZVC; WIDE CREEPAGE;
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing, 5 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Current - Hold (Ih): 600µA
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 50 mA
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Мінімальне замовлення: 1000 шт
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| TLP3083F(D4,TP4F |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOTRIAC; ZVC; WIDE CREEPAGE;
Current - DC Forward (If) (Max): 50 mA
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 100 mA
Number of Channels: 1
Current - LED Trigger (Ift) (Max): 5mA
Static dV/dt (Min): 2kV/µs (Typ)
Zero Crossing Circuit: Yes
Supplier Device Package: 6-SMD
Current - Hold (Ih): 600µA
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 6-SMD, Gull Wing, 5 Leads
Packaging: Cut Tape (CT)
Description: PHOTOTRIAC; ZVC; WIDE CREEPAGE;
Current - DC Forward (If) (Max): 50 mA
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 100 mA
Number of Channels: 1
Current - LED Trigger (Ift) (Max): 5mA
Static dV/dt (Min): 2kV/µs (Typ)
Zero Crossing Circuit: Yes
Supplier Device Package: 6-SMD
Current - Hold (Ih): 600µA
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 6-SMD, Gull Wing, 5 Leads
Packaging: Cut Tape (CT)
на замовлення 975 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 145.79 грн |
| 10+ | 90.42 грн |
| 100+ | 64.83 грн |
| 500+ | 51.38 грн |
| TLP3083F(D4,LF4F |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOTRIAC; ZVC; WIDE CREEPAGE;
Current - DC Forward (If) (Max): 50 mA
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 100 mA
Number of Channels: 1
Current - LED Trigger (Ift) (Max): 5mA
Static dV/dt (Min): 2kV/µs (Typ)
Zero Crossing Circuit: Yes
Supplier Device Package: 6-SMD
Current - Hold (Ih): 600µA
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 6-SMD, Gull Wing, 5 Leads
Packaging: Tube
Description: PHOTOTRIAC; ZVC; WIDE CREEPAGE;
Current - DC Forward (If) (Max): 50 mA
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 100 mA
Number of Channels: 1
Current - LED Trigger (Ift) (Max): 5mA
Static dV/dt (Min): 2kV/µs (Typ)
Zero Crossing Circuit: Yes
Supplier Device Package: 6-SMD
Current - Hold (Ih): 600µA
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 6-SMD, Gull Wing, 5 Leads
Packaging: Tube
на замовлення 47 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 145.79 грн |
| TLP3083F(D4,F |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 50 mA
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 100 mA
Number of Channels: 1
Current - LED Trigger (Ift) (Max): 5mA
Static dV/dt (Min): 2kV/µs (Typ)
Zero Crossing Circuit: Yes
Supplier Device Package: 6-DIP
Current - Hold (Ih): 600µA
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Triac
Package / Case: 6-DIP (0.400", 10.16mm), 5 Leads
Packaging: Tube
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 50 mA
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 100 mA
Number of Channels: 1
Current - LED Trigger (Ift) (Max): 5mA
Static dV/dt (Min): 2kV/µs (Typ)
Zero Crossing Circuit: Yes
Supplier Device Package: 6-DIP
Current - Hold (Ih): 600µA
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Triac
Package / Case: 6-DIP (0.400", 10.16mm), 5 Leads
Packaging: Tube
на замовлення 23 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 145.79 грн |
| TC74ACT04FTEL |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1IN 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
Description: IC INVERTER 6CH 1IN 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
на замовлення 1444 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.73 грн |
| 21+ | 15.02 грн |
| 25+ | 13.31 грн |
| 100+ | 10.77 грн |
| 250+ | 9.94 грн |
| 500+ | 9.44 грн |
| 1000+ | 8.88 грн |
| TC74VHC14FK(EL,K) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14VSSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-VSSOP
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Description: IC INVERTER 6CH 1-INP 14VSSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-VSSOP
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
на замовлення 1979 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.30 грн |
| 19+ | 16.38 грн |
| 25+ | 14.58 грн |
| 100+ | 11.80 грн |
| 250+ | 10.91 грн |
| 500+ | 10.37 грн |
| 1000+ | 9.76 грн |
| XPH1R104PS,L1XHQ |
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Виробник: Toshiba Semiconductor and Storage
Description: 40V UMOS9-H SOP ADVANCE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Grade: Automotive
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 3W (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: 40V UMOS9-H SOP ADVANCE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Grade: Automotive
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 3W (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
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од. на суму грн.
| XPH1R104PS,L1XHQ |
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Виробник: Toshiba Semiconductor and Storage
Description: 40V UMOS9-H SOP ADVANCE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Grade: Automotive
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 3W (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: 40V UMOS9-H SOP ADVANCE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Grade: Automotive
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 3W (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 4750 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 132.46 грн |
| 10+ | 86.65 грн |
| 100+ | 62.02 грн |
| 500+ | 47.55 грн |
| 1000+ | 42.83 грн |
| TCK1024G,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Features: Load Discharge
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 31mOhm
Input Type: Non-Inverting
Voltage - Load: 1.4V ~ 5.5V
Current - Output (Max): 1.54A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Features: Load Discharge
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 31mOhm
Input Type: Non-Inverting
Voltage - Load: 1.4V ~ 5.5V
Current - Output (Max): 1.54A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TCK1024G,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Features: Load Discharge
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 31mOhm
Input Type: Non-Inverting
Voltage - Load: 1.4V ~ 5.5V
Current - Output (Max): 1.54A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Features: Load Discharge
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 31mOhm
Input Type: Non-Inverting
Voltage - Load: 1.4V ~ 5.5V
Current - Output (Max): 1.54A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
на замовлення 4448 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 59.57 грн |
| 10+ | 35.63 грн |
| 100+ | 23.05 грн |
| 500+ | 16.54 грн |
| 1000+ | 14.89 грн |
| 2000+ | 13.51 грн |
| XCUZ30V,H3XHF(B |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 23VWM 47.5VC USC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Voltage - Breakdown (Min): 28V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 23V (Max)
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Capacitance @ Frequency: 21pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Description: TVS DIODE 23VWM 47.5VC USC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Voltage - Breakdown (Min): 28V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 23V (Max)
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Capacitance @ Frequency: 21pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.53 грн |
| 6000+ | 2.18 грн |
| XCUZ30V,H3XHF(B |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 23VWM 47.5VC USC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Voltage - Breakdown (Min): 28V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 23V (Max)
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Capacitance @ Frequency: 21pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Description: TVS DIODE 23VWM 47.5VC USC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 47.5V (Typ)
Voltage - Breakdown (Min): 28V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 23V (Max)
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Capacitance @ Frequency: 21pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.54 грн |
| 40+ | 7.70 грн |
| 100+ | 4.76 грн |
| 500+ | 3.26 грн |
| 1000+ | 2.86 грн |
| 2SC4213-A(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 20V 0.3A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 300 mA
Supplier Device Package: SC-70
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: TRANS NPN 20V 0.3A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 300 mA
Supplier Device Package: SC-70
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| XCUZ6V2,H3XHF(B |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 6.2 V ZENER DIODEAEC-Q, SOD-323(
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 175W
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Voltage - Breakdown (Min): 5.8V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 3V (Max)
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Capacitance @ Frequency: 105pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Description: 6.2 V ZENER DIODEAEC-Q, SOD-323(
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 175W
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Voltage - Breakdown (Min): 5.8V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 3V (Max)
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Capacitance @ Frequency: 105pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.30 грн |
| XCUZ6V2,H3XHF(B |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 6.2 V ZENER DIODEAEC-Q, SOD-323(
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 175W
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Voltage - Breakdown (Min): 5.8V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 3V (Max)
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Capacitance @ Frequency: 105pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Description: 6.2 V ZENER DIODEAEC-Q, SOD-323(
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 175W
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Voltage - Breakdown (Min): 5.8V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 3V (Max)
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Capacitance @ Frequency: 105pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
на замовлення 5960 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 14.11 грн |
| 37+ | 8.23 грн |
| 100+ | 5.09 грн |
| 500+ | 3.48 грн |
| 1000+ | 3.06 грн |
| TLP620M(BL-TP5,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| TLP620M(D4BLT5,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| TLP620M(D4-TP5,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| TLP620M(D4BLT1,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| TLP620M(D4GBT5,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| TLP620M(D4GRT5,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| TLP620M(D4GRT1,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| TLP620M(GR-TP1,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| TLP620M(D4Y-T1,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| TLP620M(D4GBT1,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| TLP620M(BL-TP1,E |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH TRANS 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.


























