Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13020) > Сторінка 75 з 217

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Фото Назва Виробник Інформація Доступність
Ціна
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RN2108CT(TPL3) RN2108CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2107CT Description: TRANS PREBIAS PNP 0.05W CST3
товар відсутній
RN2109CT(TPL3) RN2109CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2107CT Description: TRANS PREBIAS PNP 0.05W CST3
товар відсутній
RN2110CT(TPL3) RN2110CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2110CT Description: TRANS PREBIAS PNP 0.05W CST3
товар відсутній
RN2111CT(TPL3) RN2111CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2110CT Description: TRANS PREBIAS PNP 0.05W CST3
товар відсутній
RN2112CT(TPL3) RN2112CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2112CT Description: TRANS PREBIAS PNP 0.05W CST3
товар відсутній
RN2113CT(TPL3) RN2113CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2112CT Description: TRANS PREBIAS PNP 0.05W CST3
товар відсутній
RN2101ACT(TPL3) RN2101ACT(TPL3) Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: CST3
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
товар відсутній
RN2102ACT(TPL3) RN2102ACT(TPL3) Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V 0.08A CST3
товар відсутній
RN2103ACT(TPL3) RN2103ACT(TPL3) Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
RN2104ACT(TPL3) RN2104ACT(TPL3) Toshiba Semiconductor and Storage docget.jsp?did=730&prodName=RN2104ACT Description: TRANS PREBIAS PNP 50V 0.08A CST3
товар відсутній
RN2105ACT(TPL3) RN2105ACT(TPL3) Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
RN2106ACT(TPL3) RN2106ACT(TPL3) Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
RN2108ACT(TPL3) RN2108ACT(TPL3) Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товар відсутній
RN2109ACT(TPL3) RN2109ACT(TPL3) Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 9900 шт:
термін постачання 21-31 дні (днів)
13+22.46 грн
18+ 15.14 грн
100+ 7.64 грн
500+ 5.86 грн
1000+ 4.34 грн
2000+ 3.66 грн
5000+ 3.44 грн
Мінімальне замовлення: 13
RN2110ACT(TPL3) RN2110ACT(TPL3) Toshiba Semiconductor and Storage docget.jsp?did=737&prodName=RN2110ACT Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 4.7 kOhms
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
RN2111ACT(TPL3) RN2111ACT(TPL3) Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 10 kOhms
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
RN2112ACT(TPL3) RN2112ACT(TPL3) Toshiba Semiconductor and Storage Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 22 kOhms
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
RN2113ACT(TPL3) RN2113ACT(TPL3) Toshiba Semiconductor and Storage docget.jsp?did=740&prodName=RN2112ACT Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 47 kOhms
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
RN2409(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2409 Description: TRAN PNP S-MINI -50V -100A
товар відсутній
RN2103(T5L,F,T) RN2103(T5L,F,T) Toshiba Semiconductor and Storage RN2101_datasheet_en_20220913.pdf?did=18841&prodName=RN2101 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 1715 шт:
термін постачання 21-31 дні (днів)
16+18.25 грн
19+ 14.74 грн
100+ 7.79 грн
500+ 4.81 грн
1000+ 3.27 грн
Мінімальне замовлення: 16
RN2104(T5L,F,T) RN2104(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2101 Description: TRANS PREBIAS PNP 50V 0.1A SSM
на замовлення 727 шт:
термін постачання 21-31 дні (днів)
14+20.36 грн
17+ 16.43 грн
100+ 8.69 грн
500+ 5.36 грн
Мінімальне замовлення: 14
RN2105(T5L,F,T) RN2105(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2105 Description: TRANS PREBIAS PNP 0.1W SSM
товар відсутній
RN2106(T5L,F,T) RN2106(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2101 Description: TRANS PREBIAS PNP 50V 0.1A SSM
товар відсутній
RN2107(T5L,F,T) RN2107(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2107 Description: TRAN PNP SSM -50V -100A
товар відсутній
RN2108(T5L,F,T) RN2108(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?did=18845&prodName=RN2107 Description: TRANS PREBIAS PNP 50V 0.1A SSM
на замовлення 2890 шт:
термін постачання 21-31 дні (днів)
14+20.36 грн
17+ 16.43 грн
100+ 8.69 грн
500+ 5.36 грн
1000+ 3.65 грн
Мінімальне замовлення: 14
RN2109(T5L,F,T) RN2109(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2107 Description: TRANS PREBIAS PNP 0.1W SSM
товар відсутній
RN2110(T5L,F,T) RN2110(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2110 Description: TRAN PNP SSM -50V -100A
товар відсутній
RN2111(T5L,F,T) RN2111(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2111 Description: TRAN PNP SSM -50V -100A
товар відсутній
RN2112(T5L,F,T) RN2112(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2112 Description: TRAN PNP SSM -50V -100A
товар відсутній
RN2113(T5L,F,T) RN2113(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2112 Description: TRANS PREBIAS PNP 0.1W SSM
товар відсутній
RN2114(TE85L,F) RN2114(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2114 Description: TRANS PREBIAS PNP 0.1W SSM
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
RN2115(T5L,F,T) RN2115(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2115 Description: TRAN PNP SSM -50V -100A
товар відсутній
RN2116(T5L,F,T) RN2116(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2116 Description: TRAN PNP SSM -50V -100A
товар відсутній
RN2117(T5L,F,T) RN2117(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2114 Description: TRANS PREBIAS PNP 0.1W SSM
товар відсутній
RN2118(T5L,F,T) RN2118(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2114 Description: TRANS PREBIAS PNP 0.1W SSM
товар відсутній
HN1B04F(TE85L,F) HN1B04F(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=22325&prodName=HN1B04F Description: TRANS NPN/PNP 30V 0.5A SM6
товар відсутній
HN1B04FE-GR,LF HN1B04FE-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=22308&prodName=HN1B04FE Description: TRANS NPN/PNP 50V 0.15A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
14+21.06 грн
17+ 16.49 грн
100+ 8.73 грн
500+ 5.39 грн
1000+ 3.67 грн
2000+ 3.31 грн
Мінімальне замовлення: 14
HN1B04FE-Y,LF HN1B04FE-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=22308&prodName=HN1B04FE Description: TRANS NPN/PNP 50V 0.15A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Part Status: Active
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
HN1B01FU-Y(L,F,T) HN1B01FU-Y(L,F,T) Toshiba Semiconductor and Storage docget.jsp?did=19148&prodName=HN1B01FU Description: TRANS NPN/PNP 50V 0.15A US6
на замовлення 32 шт:
термін постачання 21-31 дні (днів)
HN1B04FU-Y(T5L,F,T HN1B04FU-Y(T5L,F,T Toshiba Semiconductor and Storage docget.jsp?did=19150&prodName=HN1B04FU Description: TRANS NPN/PNP 50V 0.15A US6
на замовлення 190 шт:
термін постачання 21-31 дні (днів)
RN1701JE(TE85L,F) RN1701JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19121&prodName=RN1701JE Description: TRANS 2NPN PREBIAS 0.1W ESV
на замовлення 8536 шт:
термін постачання 21-31 дні (днів)
10+30.88 грн
13+ 21.97 грн
100+ 12.46 грн
500+ 7.74 грн
1000+ 5.94 грн
2000+ 5.16 грн
Мінімальне замовлення: 10
2SC5096-O,LF 2SC5096-O,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=2SC5096 Description: TRANS RF NPN 10V 1GHZ SSM
товар відсутній
2SC5096-R,LF 2SC5096-R,LF Toshiba Semiconductor and Storage Description: RF TRANS NPN 10V 10GHZ SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 1.4dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 15mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Supplier Device Package: SSM
Part Status: Obsolete
товар відсутній
MT3S20P(TE12L,F) MT3S20P(TE12L,F) Toshiba Semiconductor and Storage docget.jsp?did=2066&prodName=MT3S20P Description: RF TRANS NPN 12V 7GHZ PW-MINI
на замовлення 145 шт:
термін постачання 21-31 дні (днів)
2SC5066-O,LF 2SC5066-O,LF Toshiba Semiconductor and Storage Description: RF TRANS NPN 12V 7GHZ SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: SSM
Part Status: Obsolete
товар відсутній
2SC5086-O,LF 2SC5086-O,LF Toshiba Semiconductor and Storage Description: RF TRANS NPN 12V 7GHZ SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: SSM
Part Status: Obsolete
товар відсутній
2SC5065-O(TE85L,F) 2SC5065-O(TE85L,F) Toshiba Semiconductor and Storage Description: RF TRANS NPN 12V 7GHZ USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: SC-70
Part Status: Obsolete
товар відсутній
2SC5085-O(TE85L,F) 2SC5085-O(TE85L,F) Toshiba Semiconductor and Storage Description: RF TRANS NPN 12V 7GHZ USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: SC-70
Part Status: Obsolete
товар відсутній
2SC5088-O(TE85L,F) Toshiba Semiconductor and Storage Description: RF TRANS NPN 12V 7GHZ USQ
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 18dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: USQ
Part Status: Obsolete
товар відсутній
MT3S15TU(TE85L) MT3S15TU(TE85L) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=MT3S15TU Description: TRANS RF NPN 6V 1GHZ UFM
товар відсутній
TC7SET86FU(T5L,F,T TC7SET86FU(T5L,F,T Toshiba Semiconductor and Storage Description: IC GATE XOR 1CH 2-INP USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 10.3ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
товар відсутній
1SS307(TE85L,F) 1SS307(TE85L,F) Toshiba Semiconductor and Storage 1SS307_datasheet_en_20210625.pdf?did=3301&prodName=1SS307 Description: DIODE GEN PURP 30V 100MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 30 V
на замовлення 9717 шт:
термін постачання 21-31 дні (днів)
13+23.16 грн
16+ 17.57 грн
100+ 10.55 грн
500+ 9.17 грн
1000+ 6.24 грн
Мінімальне замовлення: 13
RN1503(TE85L,F) RN1503(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1503 Description: TRANS 2NPN PREBIAS 0.3W SMV
на замовлення 1846 шт:
термін постачання 21-31 дні (днів)
RN1510(TE85L,F) RN1510(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1510 Description: TRANS 2NPN PREBIAS 0.3W SMV
на замовлення 2965 шт:
термін постачання 21-31 дні (днів)
RN1907,LF(CT RN1907,LF(CT Toshiba Semiconductor and Storage RN1908_datasheet_en_20211115.pdf?did=18826&prodName=RN1908 Description: TRANS 2NPN PREBIAS 0.2W US6
товар відсутній
HN2A01FU-Y(TE85L,F HN2A01FU-Y(TE85L,F Toshiba Semiconductor and Storage docget.jsp?did=19159&prodName=HN2A01FU Description: TRANS 2PNP 50V 0.15A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
на замовлення 2298 шт:
термін постачання 21-31 дні (днів)
10+30.88 грн
14+ 20.48 грн
100+ 10.33 грн
500+ 7.91 грн
1000+ 5.87 грн
Мінімальне замовлення: 10
RN2107ACT(TPL3) RN2107ACT(TPL3) Toshiba Semiconductor and Storage docget.jsp?did=1086&prodName=RN2107ACT Description: TRANS PREBIAS PNP 50V 0.08A CST3
товар відсутній
MT3S16U(TE85L,F) MT3S16U(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=MT3S16U Description: TRANS RF NPN 5V 1GHZ USM
на замовлення 8876 шт:
термін постачання 21-31 дні (днів)
2SC5086-Y,LF 2SC5086-Y,LF Toshiba Semiconductor and Storage Description: RF TRANS NPN 12V 7GHZ SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: SSM
Part Status: Obsolete
товар відсутній
TC75S101FE,LM(T TC75S101FE,LM(T Toshiba Semiconductor and Storage docget.jsp?did=11316&prodName=TC75S101F Description: IC OPAMP GP 1 CIRCUIT ESV
товар відсутній
RN2108CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=RN2107CT
RN2108CT(TPL3)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.05W CST3
товар відсутній
RN2109CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=RN2107CT
RN2109CT(TPL3)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.05W CST3
товар відсутній
RN2110CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=RN2110CT
RN2110CT(TPL3)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.05W CST3
товар відсутній
RN2111CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=RN2110CT
RN2111CT(TPL3)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.05W CST3
товар відсутній
RN2112CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=RN2112CT
RN2112CT(TPL3)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.05W CST3
товар відсутній
RN2113CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=RN2112CT
RN2113CT(TPL3)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.05W CST3
товар відсутній
RN2101ACT(TPL3)
RN2101ACT(TPL3)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: CST3
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
товар відсутній
RN2102ACT(TPL3)
RN2102ACT(TPL3)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
товар відсутній
RN2103ACT(TPL3)
RN2103ACT(TPL3)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
RN2104ACT(TPL3) docget.jsp?did=730&prodName=RN2104ACT
RN2104ACT(TPL3)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
товар відсутній
RN2105ACT(TPL3)
RN2105ACT(TPL3)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
RN2106ACT(TPL3)
RN2106ACT(TPL3)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
RN2108ACT(TPL3)
RN2108ACT(TPL3)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товар відсутній
RN2109ACT(TPL3)
RN2109ACT(TPL3)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 9900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
13+22.46 грн
18+ 15.14 грн
100+ 7.64 грн
500+ 5.86 грн
1000+ 4.34 грн
2000+ 3.66 грн
5000+ 3.44 грн
Мінімальне замовлення: 13
RN2110ACT(TPL3) docget.jsp?did=737&prodName=RN2110ACT
RN2110ACT(TPL3)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 4.7 kOhms
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
RN2111ACT(TPL3)
RN2111ACT(TPL3)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 10 kOhms
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
RN2112ACT(TPL3)
RN2112ACT(TPL3)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 22 kOhms
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
RN2113ACT(TPL3) docget.jsp?did=740&prodName=RN2112ACT
RN2113ACT(TPL3)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 47 kOhms
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
RN2409(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2409
Виробник: Toshiba Semiconductor and Storage
Description: TRAN PNP S-MINI -50V -100A
товар відсутній
RN2103(T5L,F,T) RN2101_datasheet_en_20220913.pdf?did=18841&prodName=RN2101
RN2103(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 1715 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
16+18.25 грн
19+ 14.74 грн
100+ 7.79 грн
500+ 4.81 грн
1000+ 3.27 грн
Мінімальне замовлення: 16
RN2104(T5L,F,T) docget.jsp?did=18841&prodName=RN2101
RN2104(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
на замовлення 727 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
14+20.36 грн
17+ 16.43 грн
100+ 8.69 грн
500+ 5.36 грн
Мінімальне замовлення: 14
RN2105(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2105
RN2105(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W SSM
товар відсутній
RN2106(T5L,F,T) docget.jsp?did=18841&prodName=RN2101
RN2106(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
товар відсутній
RN2107(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2107
RN2107(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRAN PNP SSM -50V -100A
товар відсутній
RN2108(T5L,F,T) docget.jsp?did=18845&prodName=RN2107
RN2108(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
на замовлення 2890 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
14+20.36 грн
17+ 16.43 грн
100+ 8.69 грн
500+ 5.36 грн
1000+ 3.65 грн
Мінімальне замовлення: 14
RN2109(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2107
RN2109(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W SSM
товар відсутній
RN2110(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2110
RN2110(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRAN PNP SSM -50V -100A
товар відсутній
RN2111(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2111
RN2111(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRAN PNP SSM -50V -100A
товар відсутній
RN2112(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2112
RN2112(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRAN PNP SSM -50V -100A
товар відсутній
RN2113(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2112
RN2113(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W SSM
товар відсутній
RN2114(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2114
RN2114(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W SSM
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
RN2115(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2115
RN2115(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRAN PNP SSM -50V -100A
товар відсутній
RN2116(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2116
RN2116(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRAN PNP SSM -50V -100A
товар відсутній
RN2117(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2114
RN2117(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W SSM
товар відсутній
RN2118(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN2114
RN2118(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W SSM
товар відсутній
HN1B04F(TE85L,F) docget.jsp?did=22325&prodName=HN1B04F
HN1B04F(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 30V 0.5A SM6
товар відсутній
HN1B04FE-GR,LF docget.jsp?did=22308&prodName=HN1B04FE
HN1B04FE-GR,LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
14+21.06 грн
17+ 16.49 грн
100+ 8.73 грн
500+ 5.39 грн
1000+ 3.67 грн
2000+ 3.31 грн
Мінімальне замовлення: 14
HN1B04FE-Y,LF docget.jsp?did=22308&prodName=HN1B04FE
HN1B04FE-Y,LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Part Status: Active
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
HN1B01FU-Y(L,F,T) docget.jsp?did=19148&prodName=HN1B01FU
HN1B01FU-Y(L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A US6
на замовлення 32 шт:
термін постачання 21-31 дні (днів)
HN1B04FU-Y(T5L,F,T docget.jsp?did=19150&prodName=HN1B04FU
HN1B04FU-Y(T5L,F,T
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A US6
на замовлення 190 шт:
термін постачання 21-31 дні (днів)
RN1701JE(TE85L,F) docget.jsp?did=19121&prodName=RN1701JE
RN1701JE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ESV
на замовлення 8536 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.88 грн
13+ 21.97 грн
100+ 12.46 грн
500+ 7.74 грн
1000+ 5.94 грн
2000+ 5.16 грн
Мінімальне замовлення: 10
2SC5096-O,LF docget.jsp?type=datasheet&lang=en&pid=2SC5096
2SC5096-O,LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS RF NPN 10V 1GHZ SSM
товар відсутній
2SC5096-R,LF
2SC5096-R,LF
Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 10V 10GHZ SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 1.4dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 15mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Supplier Device Package: SSM
Part Status: Obsolete
товар відсутній
MT3S20P(TE12L,F) docget.jsp?did=2066&prodName=MT3S20P
MT3S20P(TE12L,F)
Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ PW-MINI
на замовлення 145 шт:
термін постачання 21-31 дні (днів)
2SC5066-O,LF
2SC5066-O,LF
Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: SSM
Part Status: Obsolete
товар відсутній
2SC5086-O,LF
2SC5086-O,LF
Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: SSM
Part Status: Obsolete
товар відсутній
2SC5065-O(TE85L,F)
2SC5065-O(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: SC-70
Part Status: Obsolete
товар відсутній
2SC5085-O(TE85L,F)
2SC5085-O(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: SC-70
Part Status: Obsolete
товар відсутній
2SC5088-O(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ USQ
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 18dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: USQ
Part Status: Obsolete
товар відсутній
MT3S15TU(TE85L) docget.jsp?type=datasheet&lang=en&pid=MT3S15TU
MT3S15TU(TE85L)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS RF NPN 6V 1GHZ UFM
товар відсутній
TC7SET86FU(T5L,F,T
TC7SET86FU(T5L,F,T
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE XOR 1CH 2-INP USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 10.3ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
товар відсутній
1SS307(TE85L,F) 1SS307_datasheet_en_20210625.pdf?did=3301&prodName=1SS307
1SS307(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 30V 100MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 30 V
на замовлення 9717 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
13+23.16 грн
16+ 17.57 грн
100+ 10.55 грн
500+ 9.17 грн
1000+ 6.24 грн
Мінімальне замовлення: 13
RN1503(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1503
RN1503(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
на замовлення 1846 шт:
термін постачання 21-31 дні (днів)
RN1510(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1510
RN1510(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
на замовлення 2965 шт:
термін постачання 21-31 дні (днів)
RN1907,LF(CT RN1908_datasheet_en_20211115.pdf?did=18826&prodName=RN1908
RN1907,LF(CT
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
товар відсутній
HN2A01FU-Y(TE85L,F docget.jsp?did=19159&prodName=HN2A01FU
HN2A01FU-Y(TE85L,F
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
на замовлення 2298 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.88 грн
14+ 20.48 грн
100+ 10.33 грн
500+ 7.91 грн
1000+ 5.87 грн
Мінімальне замовлення: 10
RN2107ACT(TPL3) docget.jsp?did=1086&prodName=RN2107ACT
RN2107ACT(TPL3)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.08A CST3
товар відсутній
MT3S16U(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=MT3S16U
MT3S16U(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS RF NPN 5V 1GHZ USM
на замовлення 8876 шт:
термін постачання 21-31 дні (днів)
2SC5086-Y,LF
2SC5086-Y,LF
Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Supplier Device Package: SSM
Part Status: Obsolete
товар відсутній
TC75S101FE,LM(T docget.jsp?did=11316&prodName=TC75S101F
TC75S101FE,LM(T
Виробник: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 1 CIRCUIT ESV
товар відсутній
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