Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13433) > Сторінка 75 з 224
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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HN1D02FE,LF | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN1504(TE85L,F) | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN1702JE(TE85L,F) | Toshiba Semiconductor and Storage |
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на замовлення 1214 шт: термін постачання 21-31 дні (днів) |
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RN1111,LF(CT | Toshiba Semiconductor and Storage |
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на замовлення 2089 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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HN1A01F-Y(TE85L,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 125°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SM6 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SA1162-O,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
на замовлення 4716 шт: термін постачання 21-31 дні (днів) |
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2SC5087R(TE85L,F) | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 12V 8GHZ SMQ Packaging: Cut Tape (CT) Package / Case: SC-61AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.1dB ~ 2dB @ 1GHz Supplier Device Package: SMQ Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN1505(TE85L,F) | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN2903(T5L,F,T) | Toshiba Semiconductor and Storage |
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на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TC75S59FE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC COMPARATOR 1 GEN PUR ESV Packaging: Cut Tape (CT) Package / Case: SOT-553 Output Type: Open-Drain Mounting Type: Surface Mount Number of Elements: 1 Type: General Purpose Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V Supplier Device Package: ESV Propagation Delay (Max): 200ns Current - Quiescent (Max): 220µA Voltage - Input Offset (Max): 7mV @ 5V Current - Input Bias (Max): 1pA Current - Output (Typ): 25mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN1506(TE85L,F) | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN1603(TE85L,F) | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN1606(TE85L,F) | Toshiba Semiconductor and Storage |
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на замовлення 390 шт: термін постачання 21-31 дні (днів) |
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RN1409(TE85L,F) | Toshiba Semiconductor and Storage |
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на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RN1414,LF(B | Toshiba Semiconductor and Storage |
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на замовлення 5195 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TC75S57F,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Type: General Purpose Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V Supplier Device Package: SMV Propagation Delay (Max): 140ns Current - Quiescent (Max): 220µA Voltage - Input Offset (Max): 7mV @ 5V Current - Input Bias (Max): 1pA Current - Output (Typ): 25mA Part Status: Active |
на замовлення 1003 шт: термін постачання 21-31 дні (днів) |
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HN1D03FU,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 2 Pair CA + CC Current - Average Rectified (Io) (per Diode): 80mA Supplier Device Package: US6 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 4415 шт: термін постачання 21-31 дні (днів) |
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RN2706JE(TE85L,F) | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN1901,LF(CT | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN4902FE(TE85L,F) | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN2702JE(TE85L,F) | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN4905FE,LF(CB | Toshiba Semiconductor and Storage |
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на замовлення 3880 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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HN1C03F-B(TE85L,F) | Toshiba Semiconductor and Storage |
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на замовлення 2723 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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2SA1586-GR,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
на замовлення 6907 шт: термін постачання 21-31 дні (днів) |
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2SC5087-O(TE85L,F) | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC75S56F,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Type: General Purpose Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V Supplier Device Package: SMV Propagation Delay (Max): 680ns Current - Quiescent (Max): 22µA Voltage - Input Offset (Max): 7mV @ 5V Current - Input Bias (Max): 1pA @ 5V Current - Output (Typ): 25mA Part Status: Active |
на замовлення 13522 шт: термін постачання 21-31 дні (днів) |
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1SV307(TPH3,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Diode Type: PIN - Single Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 30V Supplier Device Package: USC Current - Max: 50 mA |
на замовлення 8031 шт: термін постачання 21-31 дні (днів) |
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RN2501(TE85L,F) | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN2905FE,LF(CB | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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HN2C01FU-GR(T5L,F) | Toshiba Semiconductor and Storage |
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на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RN4906FE,LF(CB | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC2714-O(TE85L,F) | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 30V 550MHZ S MINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Gain: 23dB Power - Max: 100mW Current - Collector (Ic) (Max): 20mA Voltage - Collector Emitter Breakdown (Max): 30V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V Frequency - Transition: 550MHz Noise Figure (dB Typ @ f): 2.5dB @ 100MHz Supplier Device Package: S-Mini Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN1501(TE85L,F) | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC4207-BL(TE85L,F | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 125°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SMV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC5108-Y,LF | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN1607(TE85L,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SM6 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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2SA1162-Y,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
на замовлення 35824 шт: термін постачання 21-31 дні (днів) |
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RN1502(TE85L,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SMV |
на замовлення 51559 шт: термін постачання 21-31 дні (днів) |
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RN4605(TE85L,F) | Toshiba Semiconductor and Storage |
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на замовлення 250 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TC7SET17FU,LF | Toshiba Semiconductor and Storage |
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на замовлення 1193 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RN2102,LF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: SSM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms |
на замовлення 2970 шт: термін постачання 21-31 дні (днів) |
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TC75W57FU,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 2 Type: General Purpose Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V Supplier Device Package: 8-SSOP Propagation Delay (Max): 140ns Current - Quiescent (Max): 400µA Voltage - Input Offset (Max): 7mV @ 5V Current - Input Bias (Max): 1pA @ 5V Current - Output (Typ): 25mA |
на замовлення 1465 шт: термін постачання 21-31 дні (днів) |
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RN1706JE(TE85L,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ESV Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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HN2D01FU(TE85L,F) | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 80MA US6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 3 Independent Current - Average Rectified (Io) (per Diode): 80mA Supplier Device Package: US6 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SA1586-Y,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
на замовлення 13671 шт: термін постачання 21-31 дні (днів) |
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HN1B01F-GR(TE85L,F | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC75S57FU(TE85L,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Type: General Purpose Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V Supplier Device Package: 5-SSOP Propagation Delay (Max): 140ns Current - Quiescent (Max): 220µA Voltage - Input Offset (Max): 7mV @ 5V Current - Input Bias (Max): 1pA Current - Output (Typ): 25mA Part Status: Active |
на замовлення 25633 шт: термін постачання 21-31 дні (днів) |
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HN1B01F-Y(TE85L,F) | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN2502(TE85L,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SMV Part Status: Active |
на замовлення 2770 шт: термін постачання 21-31 дні (днів) |
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TC75S54FU(TE85L,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 100µA Slew Rate: 0.7V/µs Current - Input Bias: 1 pA Voltage - Input Offset: 2 mV Supplier Device Package: 5-SSOP Part Status: Active Number of Circuits: 1 Current - Output / Channel: 700 µA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 7 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TC7SH126FU(T5L,F,T | Toshiba Semiconductor and Storage |
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на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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HN1C03FU-B(TE85L,F | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN4986FE(T5L,F,T) | Toshiba Semiconductor and Storage |
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на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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2SC4738-GR,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SSM Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
на замовлення 4826 шт: термін постачання 21-31 дні (днів) |
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TC75W51FK(TE85L,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 85°C Current - Supply: 120µA Slew Rate: 0.5V/µs Gain Bandwidth Product: 600 kHz Current - Input Bias: 1 pA Voltage - Input Offset: 2 mV Supplier Device Package: 8-SSOP Number of Circuits: 2 Voltage - Supply Span (Min): 1.5 V Voltage - Supply Span (Max): 7 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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HN1A01F-GR(TE85L,F | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC5066-Y,LF | Toshiba Semiconductor and Storage |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SA1182-Y,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 150 mW |
на замовлення 7638 шт: термін постачання 21-31 дні (днів) |
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TC7SH17FU,LF | Toshiba Semiconductor and Storage |
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на замовлення 2474 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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2SA1298-Y,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 120MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 200 mW |
на замовлення 2720 шт: термін постачання 21-31 дні (днів) |
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HN1D02FE,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA ES6
Description: DIODE ARRAY GP 80V 100MA ES6
товару немає в наявності
В кошику
од. на суму грн.
RN1504(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Description: TRANS 2NPN PREBIAS 0.3W SMV
товару немає в наявності
В кошику
од. на суму грн.
RN1702JE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ESV
Description: TRANS 2NPN PREBIAS 0.1W ESV
на замовлення 1214 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 35.02 грн |
13+ | 24.91 грн |
100+ | 14.13 грн |
500+ | 8.78 грн |
1000+ | 6.73 грн |
RN1111,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Description: TRANS PREBIAS NPN 50V 0.1A SSM
на замовлення 2089 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
HN1A01F-Y(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SM6
Part Status: Active
Description: TRANS 2PNP 50V 0.15A SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SM6
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
2SA1162-O,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
на замовлення 4716 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
27+ | 11.94 грн |
45+ | 6.82 грн |
100+ | 4.19 грн |
500+ | 2.85 грн |
1000+ | 2.50 грн |
2SC5087R(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 8GHZ SMQ
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2dB @ 1GHz
Supplier Device Package: SMQ
Part Status: Active
Description: RF TRANS NPN 12V 8GHZ SMQ
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2dB @ 1GHz
Supplier Device Package: SMQ
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
RN1505(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Description: TRANS 2NPN PREBIAS 0.3W SMV
товару немає в наявності
В кошику
од. на суму грн.
RN2903(T5L,F,T) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRAN DUAL PNP US6 -50V -100A
Description: TRAN DUAL PNP US6 -50V -100A
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
TC75S59FE(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: ESV
Propagation Delay (Max): 200ns
Current - Quiescent (Max): 220µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA
Current - Output (Typ): 25mA
Description: IC COMPARATOR 1 GEN PUR ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: ESV
Propagation Delay (Max): 200ns
Current - Quiescent (Max): 220µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA
Current - Output (Typ): 25mA
товару немає в наявності
В кошику
од. на суму грн.
RN1506(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Description: TRANS 2NPN PREBIAS 0.3W SMV
товару немає в наявності
В кошику
од. на суму грн.
RN1603(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Description: TRANS 2NPN PREBIAS 0.3W SM6
товару немає в наявності
В кошику
од. на суму грн.
RN1606(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Description: TRANS 2NPN PREBIAS 0.3W SM6
на замовлення 390 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 36.61 грн |
12+ | 25.90 грн |
100+ | 14.68 грн |
RN1409(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRAN NPN S-MINI 50V 100A
Description: TRAN NPN S-MINI 50V 100A
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
RN1414,LF(B |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.2W S-MINI
Description: TRANS PREBIAS NPN 0.2W S-MINI
на замовлення 5195 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
TC75S57F,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: SMV
Propagation Delay (Max): 140ns
Current - Quiescent (Max): 220µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA
Current - Output (Typ): 25mA
Part Status: Active
Description: IC COMPARATOR 1 GEN PUR SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: SMV
Propagation Delay (Max): 140ns
Current - Quiescent (Max): 220µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA
Current - Output (Typ): 25mA
Part Status: Active
на замовлення 1003 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 37.40 грн |
11+ | 28.89 грн |
25+ | 26.48 грн |
100+ | 18.50 грн |
250+ | 16.77 грн |
500+ | 13.87 грн |
1000+ | 10.24 грн |
HN1D03FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 80MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair CA + CC
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: US6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 80MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair CA + CC
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: US6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 4415 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13+ | 25.47 грн |
18+ | 17.17 грн |
100+ | 8.70 грн |
500+ | 6.66 грн |
1000+ | 4.94 грн |
RN2706JE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Description: TRANS 2PNP PREBIAS 0.1W ESV
товару немає в наявності
В кошику
од. на суму грн.
RN1901,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Description: TRANS 2NPN PREBIAS 0.2W US6
товару немає в наявності
В кошику
од. на суму грн.
RN4902FE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
товару немає в наявності
В кошику
од. на суму грн.
RN2702JE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Description: TRANS 2PNP PREBIAS 0.1W ESV
товару немає в наявності
В кошику
од. на суму грн.
RN4905FE,LF(CB |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
на замовлення 3880 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
HN1C03F-B(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 20V 0.3A SM6
Description: TRANS 2NPN 20V 0.3A SM6
на замовлення 2723 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
2SA1586-GR,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS PNP 50V 0.15A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
на замовлення 6907 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
29+ | 11.14 грн |
45+ | 6.82 грн |
100+ | 4.20 грн |
500+ | 2.86 грн |
1000+ | 2.51 грн |
2SC5087-O(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SMQ
Description: RF TRANS NPN 12V 7GHZ SMQ
товару немає в наявності
В кошику
од. на суму грн.
TC75S56F,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: SMV
Propagation Delay (Max): 680ns
Current - Quiescent (Max): 22µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 25mA
Part Status: Active
Description: IC COMPARATOR 1 GEN PUR SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: SMV
Propagation Delay (Max): 680ns
Current - Quiescent (Max): 22µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 25mA
Part Status: Active
на замовлення 13522 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 36.61 грн |
11+ | 28.20 грн |
25+ | 25.87 грн |
100+ | 18.06 грн |
250+ | 16.37 грн |
500+ | 13.54 грн |
1000+ | 9.99 грн |
1SV307(TPH3,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: RF DIODE PIN 30V USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: USC
Current - Max: 50 mA
Description: RF DIODE PIN 30V USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: USC
Current - Max: 50 mA
на замовлення 8031 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 27.06 грн |
18+ | 17.32 грн |
100+ | 9.94 грн |
500+ | 8.14 грн |
1000+ | 7.35 грн |
RN2501(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
Description: TRANS 2PNP PREBIAS 0.3W SMV
товару немає в наявності
В кошику
од. на суму грн.
RN2905FE,LF(CB |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Description: TRANS 2PNP PREBIAS 0.1W ES6
товару немає в наявності
В кошику
од. на суму грн.
HN2C01FU-GR(T5L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A US6
Description: TRANS 2NPN 50V 0.15A US6
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
RN4906FE,LF(CB |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
товару немає в наявності
В кошику
од. на суму грн.
2SC2714-O(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 30V 550MHZ S MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 23dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Description: RF TRANS NPN 30V 550MHZ S MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 23dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
Supplier Device Package: S-Mini
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
RN1501(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Description: TRANS 2NPN PREBIAS 0.3W SMV
товару немає в наявності
В кошику
од. на суму грн.
2SC4207-BL(TE85L,F |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
Description: TRANS 2NPN 50V 0.15A SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
товару немає в наявності
В кошику
од. на суму грн.
2SC5108-Y,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 10V 6GHZ SSM
Description: RF TRANS NPN 10V 6GHZ SSM
товару немає в наявності
В кошику
од. на суму грн.
RN1607(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
Description: TRANS 2NPN PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 27.06 грн |
20+ | 15.86 грн |
100+ | 9.97 грн |
500+ | 6.96 грн |
1000+ | 6.18 грн |
2SA1162-Y,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
на замовлення 35824 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
27+ | 11.94 грн |
45+ | 6.82 грн |
100+ | 4.19 грн |
500+ | 2.85 грн |
1000+ | 2.50 грн |
RN1502(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SMV
Description: TRANS 2NPN PREBIAS 0.3W SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SMV
на замовлення 51559 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 27.85 грн |
19+ | 16.25 грн |
100+ | 10.21 грн |
500+ | 7.13 грн |
1000+ | 6.33 грн |
RN4605(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
на замовлення 250 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
TC7SET17FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE SMV L-MOS USV
Description: IC GATE SMV L-MOS USV
на замовлення 1193 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
RN2102,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 2970 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
24+ | 13.53 грн |
39+ | 7.97 грн |
100+ | 4.94 грн |
500+ | 3.37 грн |
1000+ | 2.96 грн |
TC75W57FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 2 GEN PUR 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: 8-SSOP
Propagation Delay (Max): 140ns
Current - Quiescent (Max): 400µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 25mA
Description: IC COMPARATOR 2 GEN PUR 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: 8-SSOP
Propagation Delay (Max): 140ns
Current - Quiescent (Max): 400µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 25mA
на замовлення 1465 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 77.99 грн |
10+ | 45.52 грн |
25+ | 37.76 грн |
100+ | 27.21 грн |
250+ | 23.15 грн |
500+ | 20.66 грн |
1000+ | 18.27 грн |
RN1706JE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
Description: TRANS 2NPN PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
HN2D01FU(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 80MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: US6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 80MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: US6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
товару немає в наявності
В кошику
од. на суму грн.
2SA1586-Y,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS PNP 50V 0.15A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
на замовлення 13671 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
29+ | 11.14 грн |
45+ | 6.82 грн |
100+ | 4.20 грн |
500+ | 2.86 грн |
1000+ | 2.51 грн |
HN1B01F-GR(TE85L,F |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A SM6
Description: TRANS NPN/PNP 50V 0.15A SM6
товару немає в наявності
В кошику
од. на суму грн.
TC75S57FU(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: 5-SSOP
Propagation Delay (Max): 140ns
Current - Quiescent (Max): 220µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA
Current - Output (Typ): 25mA
Part Status: Active
Description: IC COMPARATOR 1 GEN PUR 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: 5-SSOP
Propagation Delay (Max): 140ns
Current - Quiescent (Max): 220µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA
Current - Output (Typ): 25mA
Part Status: Active
на замовлення 25633 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 30.24 грн |
13+ | 25.29 грн |
25+ | 23.60 грн |
100+ | 17.71 грн |
250+ | 16.44 грн |
500+ | 13.91 грн |
1000+ | 10.58 грн |
HN1B01F-Y(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A SM6
Description: TRANS NPN/PNP 50V 0.15A SM6
товару немає в наявності
В кошику
од. на суму грн.
RN2502(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SMV
Part Status: Active
Description: TRANS 2PNP PREBIAS 0.3W SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SMV
Part Status: Active
на замовлення 2770 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 37.40 грн |
12+ | 26.52 грн |
100+ | 15.02 грн |
500+ | 9.33 грн |
1000+ | 7.16 грн |
TC75S54FU(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 1 CIRCUIT 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 100µA
Slew Rate: 0.7V/µs
Current - Input Bias: 1 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 5-SSOP
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 700 µA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 7 V
Description: IC OPAMP GP 1 CIRCUIT 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 100µA
Slew Rate: 0.7V/µs
Current - Input Bias: 1 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 5-SSOP
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 700 µA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 7 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 38.99 грн |
11+ | 30.35 грн |
25+ | 27.71 грн |
100+ | 19.36 грн |
250+ | 17.55 грн |
500+ | 14.52 грн |
1000+ | 10.71 грн |
TC7SH126FU(T5L,F,T |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE L-MOS USV
Description: IC GATE L-MOS USV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
HN1C03FU-B(TE85L,F |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 20V 0.3A US6
Description: TRANS 2NPN 20V 0.3A US6
товару немає в наявності
В кошику
од. на суму грн.
RN4986FE(T5L,F,T) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRAN DUAL NPN/PNP 50V 100MA ES6
Description: TRAN DUAL NPN/PNP 50V 100MA ES6
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
2SC4738-GR,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS NPN 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
на замовлення 4826 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
24+ | 13.53 грн |
40+ | 7.74 грн |
100+ | 4.78 грн |
500+ | 3.26 грн |
1000+ | 2.87 грн |
TC75W51FK(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC CMOS 2 CIRCUIT 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 120µA
Slew Rate: 0.5V/µs
Gain Bandwidth Product: 600 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SSOP
Number of Circuits: 2
Voltage - Supply Span (Min): 1.5 V
Voltage - Supply Span (Max): 7 V
Description: IC CMOS 2 CIRCUIT 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 120µA
Slew Rate: 0.5V/µs
Gain Bandwidth Product: 600 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SSOP
Number of Circuits: 2
Voltage - Supply Span (Min): 1.5 V
Voltage - Supply Span (Max): 7 V
товару немає в наявності
В кошику
од. на суму грн.
HN1A01F-GR(TE85L,F |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A SM6
Description: TRANS 2PNP 50V 0.15A SM6
товару немає в наявності
В кошику
од. на суму грн.
2SC5066-Y,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SSM
Description: RF TRANS NPN 12V 7GHZ SSM
товару немає в наявності
В кошику
од. на суму грн.
2SA1182-Y,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 30V 0.5A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Description: TRANS PNP 30V 0.5A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
на замовлення 7638 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
16+ | 19.90 грн |
27+ | 11.42 грн |
100+ | 7.15 грн |
500+ | 4.93 грн |
1000+ | 4.36 грн |
TC7SH17FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC SNGL SCHM BUFFER USV
Description: IC SNGL SCHM BUFFER USV
на замовлення 2474 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
2SA1298-Y,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 25V 0.8A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 120MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 200 mW
Description: TRANS PNP 25V 0.8A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 120MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 200 mW
на замовлення 2720 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13+ | 26.26 грн |
20+ | 15.48 грн |
100+ | 9.73 грн |
500+ | 6.78 грн |
1000+ | 6.01 грн |