Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13020) > Сторінка 74 з 217
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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RN4903(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
товар відсутній |
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RN4904(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
товар відсутній |
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RN4907(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
товар відсутній |
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RN4908(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
товар відсутній |
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RN4909(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
товар відсутній |
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RN4910(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
товар відсутній |
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RN4911(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
товар відсутній |
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RN49A1(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
товар відсутній |
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HN1C03FU-A(TE85L,F | Toshiba Semiconductor and Storage | Description: TRANS 2NPN 20V 0.3A US6 |
товар відсутній |
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HN1C01FE-Y,LF | Toshiba Semiconductor and Storage | Description: TRANS 2NPN 50V 0.15A ES6 |
на замовлення 2170 шт: термін постачання 21-31 дні (днів) |
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HN2C01FE-GR(T5L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN 50V 0.15A ES6 |
товар відсутній |
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HN1C01FU-Y(T5L,F,T | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN 50V 0.15A US6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 125°C (TJ) Power - Max: 200mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: US6 Part Status: Active |
товар відсутній |
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HN2C01FU-Y(TE85L,F | Toshiba Semiconductor and Storage | Description: TRANS 2NPN 50V 0.15A US6 |
на замовлення 5850 шт: термін постачання 21-31 дні (днів) |
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2SC2859-GR(TE85L,F | Toshiba Semiconductor and Storage |
Description: TRANS NPN 30V 0.5A SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V Frequency - Transition: 300MHz Supplier Device Package: S-Mini Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 150 mW |
товар відсутній |
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2SC3325-O(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.5A SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Frequency - Transition: 300MHz Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
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RN1102CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 20V 0.05A CST3 |
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RN1103CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.05W CST3 |
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RN1104CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.05W CST3 |
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RN1105CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.05W CST3 |
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RN1106CT(TPL3) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 20V 0.05A CST3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V Supplier Device Package: CST3 Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 50 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms |
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RN1107CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.05W CST3 |
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RN1108CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.05W CST3 |
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RN1109CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.05W CST3 |
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RN1110CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.05W CST3 |
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RN1111CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.05W CST3 |
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RN1112CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.05W CST3 |
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RN1113CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.05W CST3 |
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RN1102ACT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 50V 0.08A CST3 |
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RN1103ACT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.1W CST3 |
товар відсутній |
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RN1104ACT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.1W CST3 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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RN1105ACT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.1W CST3 |
на замовлення 9997 шт: термін постачання 21-31 дні (днів) |
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RN1106ACT(TPL3) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.08A CST3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: CST3 Current - Collector (Ic) (Max): 80 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms |
товар відсутній |
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RN1107ACT(TPL3) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.08A CST3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: CST3 Part Status: Active Current - Collector (Ic) (Max): 80 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 9440 шт: термін постачання 21-31 дні (днів) |
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RN1108ACT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.1W CST3 |
на замовлення 9940 шт: термін постачання 21-31 дні (днів) |
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RN1109ACT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.1W CST3 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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RN1110ACT(TPL3) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.08A CST3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: CST3 Part Status: Active Current - Collector (Ic) (Max): 80 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Resistor - Base (R1): 47 kOhms |
на замовлення 9980 шт: термін постачання 21-31 дні (днів) |
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RN1111ACT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.1W CST3 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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RN1112ACT(TPL3) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.08A CST3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: CST3 Part Status: Active Current - Collector (Ic) (Max): 80 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Resistor - Base (R1): 22 kOhms |
на замовлення 9945 шт: термін постачання 21-31 дні (днів) |
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RN1113ACT(TPL3) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.08A CST3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: CST3 Part Status: Active Current - Collector (Ic) (Max): 80 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Resistor - Base (R1): 47 kOhms |
на замовлення 9990 шт: термін постачання 21-31 дні (днів) |
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RN1408(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRAN NPN S-MINI 50V 100A |
товар відсутній |
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RN1415(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.2W S-MINI |
на замовлення 5638 шт: термін постачання 21-31 дні (днів) |
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RN1416,LF | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.2W S-MINI |
на замовлення 1700 шт: термін постачання 21-31 дні (днів) |
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RN1417(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.2W S-MINI |
на замовлення 5880 шт: термін постачання 21-31 дні (днів) |
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RN1418(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 50V 0.1A SMINI |
на замовлення 1099 шт: термін постачання 21-31 дні (днів) |
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RN1110(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.1W SSM |
товар відсутній |
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RN1116(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSM Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: SSM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms |
на замовлення 73 шт: термін постачання 21-31 дні (днів) |
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HN1A01FE-Y(T5L,F,T | Toshiba Semiconductor and Storage | Description: TRAN DUAL PNP -50V -0.15A ES6 |
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HN2A01FE-GR(TE85LF | Toshiba Semiconductor and Storage | Description: TRANS 2PNP 50V 0.15A ES6 |
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HN2A01FE-Y(TE85L,F | Toshiba Semiconductor and Storage | Description: TRANS 2PNP 50V 0.15A ES6 |
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2SA1618-Y(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP 50V 0.15A SMV Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter Operating Temperature: 125°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SMV Part Status: Active |
на замовлення 2937 шт: термін постачання 21-31 дні (днів) |
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2SA1587-BL,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 120V 0.1A SC70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 100 mW |
на замовлення 6126 шт: термін постачання 21-31 дні (днів) |
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2SA1182-GR(TE85L,F | Toshiba Semiconductor and Storage | Description: TRANS PNP 30V 0.5A S-MINI |
товар відсутній |
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2SA1182-O(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS PNP 30V 0.5A S-MINI |
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RN2101CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS PNP 0.05W CST3 |
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RN2102CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS PNP 20V 0.05A CST3 |
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RN2103CT(TPL3) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 20V 0.05A CST3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: CST3 Part Status: Obsolete Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 50 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
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RN2104CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS PNP 20V 0.05A CST3 |
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RN2105CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS PNP 20V 0.05A CST3 |
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RN2106CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS PNP 0.05W CST3 |
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RN2107CT(TPL3) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS PNP 20V 0.05A CST3 |
товар відсутній |
RN4903(T5L,F,T) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
товар відсутній
RN4904(T5L,F,T) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
товар відсутній
RN4907(T5L,F,T) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
товар відсутній
RN4908(T5L,F,T) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
товар відсутній
RN4909(T5L,F,T) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
товар відсутній
RN4910(T5L,F,T) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
товар відсутній
RN4911(T5L,F,T) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
товар відсутній
RN49A1(T5L,F,T) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
товар відсутній
HN1C03FU-A(TE85L,F |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 20V 0.3A US6
Description: TRANS 2NPN 20V 0.3A US6
товар відсутній
HN1C01FE-Y,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A ES6
Description: TRANS 2NPN 50V 0.15A ES6
на замовлення 2170 шт:
термін постачання 21-31 дні (днів)HN2C01FE-GR(T5L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A ES6
Description: TRANS 2NPN 50V 0.15A ES6
товар відсутній
HN1C01FU-Y(T5L,F,T |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
Description: TRANS 2NPN 50V 0.15A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
товар відсутній
HN2C01FU-Y(TE85L,F |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A US6
Description: TRANS 2NPN 50V 0.15A US6
на замовлення 5850 шт:
термін постачання 21-31 дні (днів)2SC2859-GR(TE85L,F |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 30V 0.5A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: S-Mini
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Description: TRANS NPN 30V 0.5A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: S-Mini
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
товар відсутній
2SC3325-O(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.5A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS NPN 50V 0.5A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
товар відсутній
RN1102CT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 20V 0.05A CST3
Description: TRANS PREBIAS NPN 20V 0.05A CST3
товар відсутній
RN1103CT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.05W CST3
Description: TRANS PREBIAS NPN 0.05W CST3
товар відсутній
RN1104CT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.05W CST3
Description: TRANS PREBIAS NPN 0.05W CST3
товар відсутній
RN1105CT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.05W CST3
Description: TRANS PREBIAS NPN 0.05W CST3
товар відсутній
RN1106CT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 20V 0.05A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Supplier Device Package: CST3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 50 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 20V 0.05A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Supplier Device Package: CST3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 50 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товар відсутній
RN1107CT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.05W CST3
Description: TRANS PREBIAS NPN 0.05W CST3
товар відсутній
RN1108CT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.05W CST3
Description: TRANS PREBIAS NPN 0.05W CST3
товар відсутній
RN1109CT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.05W CST3
Description: TRANS PREBIAS NPN 0.05W CST3
товар відсутній
RN1110CT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.05W CST3
Description: TRANS PREBIAS NPN 0.05W CST3
товар відсутній
RN1111CT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.05W CST3
Description: TRANS PREBIAS NPN 0.05W CST3
товар відсутній
RN1112CT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.05W CST3
Description: TRANS PREBIAS NPN 0.05W CST3
товар відсутній
RN1113CT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.05W CST3
Description: TRANS PREBIAS NPN 0.05W CST3
товар відсутній
RN1102ACT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.08A CST3
Description: TRANS PREBIAS NPN 50V 0.08A CST3
товар відсутній
RN1103ACT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W CST3
Description: TRANS PREBIAS NPN 0.1W CST3
товар відсутній
RN1104ACT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W CST3
Description: TRANS PREBIAS NPN 0.1W CST3
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)RN1105ACT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W CST3
Description: TRANS PREBIAS NPN 0.1W CST3
на замовлення 9997 шт:
термін постачання 21-31 дні (днів)RN1106ACT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: CST3
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: CST3
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товар відсутній
RN1107ACT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 9440 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 24.23 грн |
16+ | 17.5 грн |
100+ | 9.92 грн |
500+ | 6.17 грн |
1000+ | 4.73 грн |
2000+ | 4.11 грн |
5000+ | 3.64 грн |
RN1108ACT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W CST3
Description: TRANS PREBIAS NPN 0.1W CST3
на замовлення 9940 шт:
термін постачання 21-31 дні (днів)RN1109ACT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W CST3
Description: TRANS PREBIAS NPN 0.1W CST3
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)RN1110ACT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 47 kOhms
на замовлення 9980 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 24.23 грн |
16+ | 17.5 грн |
100+ | 9.92 грн |
500+ | 6.17 грн |
1000+ | 4.73 грн |
2000+ | 4.11 грн |
5000+ | 3.64 грн |
RN1111ACT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W CST3
Description: TRANS PREBIAS NPN 0.1W CST3
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)RN1112ACT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 22 kOhms
Description: TRANS PREBIAS NPN 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 22 kOhms
на замовлення 9945 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 22.09 грн |
19+ | 14.96 грн |
100+ | 7.54 грн |
500+ | 5.77 грн |
1000+ | 4.28 грн |
2000+ | 3.6 грн |
5000+ | 3.39 грн |
RN1113ACT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.08A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: CST3
Part Status: Active
Current - Collector (Ic) (Max): 80 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Resistor - Base (R1): 47 kOhms
на замовлення 9990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 22.81 грн |
18+ | 15.37 грн |
100+ | 7.76 грн |
500+ | 5.95 грн |
1000+ | 4.41 грн |
2000+ | 3.71 грн |
5000+ | 3.49 грн |
RN1408(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: TRAN NPN S-MINI 50V 100A
Description: TRAN NPN S-MINI 50V 100A
товар відсутній
RN1415(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.2W S-MINI
Description: TRANS PREBIAS NPN 0.2W S-MINI
на замовлення 5638 шт:
термін постачання 21-31 дні (днів)RN1416,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.2W S-MINI
Description: TRANS PREBIAS NPN 0.2W S-MINI
на замовлення 1700 шт:
термін постачання 21-31 дні (днів)RN1417(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.2W S-MINI
Description: TRANS PREBIAS NPN 0.2W S-MINI
на замовлення 5880 шт:
термін постачання 21-31 дні (днів)RN1418(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
на замовлення 1099 шт:
термін постачання 21-31 дні (днів)RN1110(T5L,F,T) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W SSM
Description: TRANS PREBIAS NPN 0.1W SSM
товар відсутній
RN1116(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 73 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 19.96 грн |
18+ | 15.51 грн |
HN1A01FE-Y(T5L,F,T |
Виробник: Toshiba Semiconductor and Storage
Description: TRAN DUAL PNP -50V -0.15A ES6
Description: TRAN DUAL PNP -50V -0.15A ES6
товар відсутній
HN2A01FE-GR(TE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A ES6
Description: TRANS 2PNP 50V 0.15A ES6
товар відсутній
HN2A01FE-Y(TE85L,F |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A ES6
Description: TRANS 2PNP 50V 0.15A ES6
товар відсутній
2SA1618-Y(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
Part Status: Active
Description: TRANS 2PNP 50V 0.15A SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
Part Status: Active
на замовлення 2937 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 29.93 грн |
14+ | 20.25 грн |
100+ | 10.22 грн |
500+ | 7.82 грн |
1000+ | 5.8 грн |
2SA1587-BL,LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
Description: TRANS PNP 120V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
на замовлення 6126 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
16+ | 17.82 грн |
24+ | 11.53 грн |
100+ | 5.63 грн |
500+ | 4.41 грн |
1000+ | 3.06 грн |
2SA1182-GR(TE85L,F |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 30V 0.5A S-MINI
Description: TRANS PNP 30V 0.5A S-MINI
товар відсутній
2SA1182-O(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 30V 0.5A S-MINI
Description: TRANS PNP 30V 0.5A S-MINI
товар відсутній
RN2101CT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.05W CST3
Description: TRANS PREBIAS PNP 0.05W CST3
товар відсутній
RN2102CT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 20V 0.05A CST3
Description: TRANS PREBIAS PNP 20V 0.05A CST3
товар відсутній
RN2103CT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 20V 0.05A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 50 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS PNP 20V 0.05A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: CST3
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 50 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
товар відсутній
RN2104CT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 20V 0.05A CST3
Description: TRANS PREBIAS PNP 20V 0.05A CST3
товар відсутній
RN2105CT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 20V 0.05A CST3
Description: TRANS PREBIAS PNP 20V 0.05A CST3
товар відсутній
RN2106CT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.05W CST3
Description: TRANS PREBIAS PNP 0.05W CST3
товар відсутній
RN2107CT(TPL3) |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 20V 0.05A CST3
Description: TRANS PREBIAS PNP 20V 0.05A CST3
товар відсутній