Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13548) > Сторінка 74 з 226
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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HN1D02FE,LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA ES6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN1504(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.3W SMV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN1702JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.1W ESV |
на замовлення 1214 шт: термін постачання 21-31 дні (днів) |
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RN1111,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSM |
на замовлення 2089 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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HN1A01F-Y(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP 50V 0.15A SM6Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 150mA Power - Max: 300mW Operating Temperature: 125°C (TJ) Transistor Type: 2 PNP (Dual) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: SM6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SA1162-O,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A S-MINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
на замовлення 2816 шт: термін постачання 21-31 дні (днів) |
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2SC5087R(TE85L,F) | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 12V 8GHZ SMQ Packaging: Cut Tape (CT) Package / Case: SC-61AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.1dB ~ 2dB @ 1GHz Supplier Device Package: SMQ Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN1505(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.3W SMV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN2903(T5L,F,T) | Toshiba Semiconductor and Storage |
Description: TRAN DUAL PNP US6 -50V -100A |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TC75S59FE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC COMPARATOR 1 GEN PUR ESV Voltage - Input Offset (Max): 7mV @ 5V Current - Quiescent (Max): 220µA Propagation Delay (Max): 200ns Supplier Device Package: ESV Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V Operating Temperature: -40°C ~ 85°C Type: General Purpose Number of Elements: 1 Mounting Type: Surface Mount Output Type: Open-Drain Package / Case: SOT-553 Packaging: Cut Tape (CT) Current - Output (Typ): 25mA Current - Input Bias (Max): 1pA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN1506(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.3W SMV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN1603(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.3W SM6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN1606(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.3W SM6 |
на замовлення 390 шт: термін постачання 21-31 дні (днів) |
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RN1409(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRAN NPN S-MINI 50V 100A |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RN1414,LF(B | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 0.2W S-MINI |
на замовлення 5195 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TC75S57F,LF | Toshiba Semiconductor and Storage |
Description: IC COMPARATOR 1 GEN PUR SMVPart Status: Active Current - Output (Typ): 25mA Current - Input Bias (Max): 1pA Voltage - Input Offset (Max): 7mV @ 5V Current - Quiescent (Max): 220µA Propagation Delay (Max): 140ns Supplier Device Package: SMV Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V Operating Temperature: -40°C ~ 85°C Type: General Purpose Number of Elements: 1 Mounting Type: Surface Mount Output Type: Push-Pull Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 1003 шт: термін постачання 21-31 дні (днів) |
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HN1D03FU,LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 80MA US6Current - Reverse Leakage @ Vr: 500 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: US6 Current - Average Rectified (Io) (per Diode): 80mA Diode Configuration: 2 Pair CA + CC Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
на замовлення 4415 шт: термін постачання 21-31 дні (днів) |
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RN2706JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.1W ESV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN1901,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2NPN 50V 100MA US6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 1kOhms Supplier Device Package: US6 |
на замовлення 3291 шт: термін постачання 21-31 дні (днів) |
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RN4902FE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP PREBIAS 0.1W ES6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN2702JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.1W ESV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN4905FE,LF(CB | Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP PREBIAS 0.1W ES6 |
на замовлення 3880 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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HN1C03F-B(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN 20V 0.3A SM6 |
на замовлення 2723 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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2SA1586-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SC-70Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
на замовлення 4393 шт: термін постачання 21-31 дні (днів) |
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2SC5087-O(TE85L,F) | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 12V 7GHZ SMQ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC75S56F,LF | Toshiba Semiconductor and Storage |
Description: IC COMPARATOR 1 GEN PUR SMVMounting Type: Surface Mount Output Type: Push-Pull Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) Part Status: Active Current - Output (Typ): 25mA Current - Input Bias (Max): 1pA @ 5V Voltage - Input Offset (Max): 7mV @ 5V Current - Quiescent (Max): 22µA Propagation Delay (Max): 680ns Supplier Device Package: SMV Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V Operating Temperature: -40°C ~ 85°C Type: General Purpose Number of Elements: 1 |
на замовлення 13522 шт: термін постачання 21-31 дні (днів) |
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1SV307(TPH3,F) | Toshiba Semiconductor and Storage |
Description: RF DIODE PIN 30V USCCurrent - Max: 50 mA Supplier Device Package: USC Voltage - Peak Reverse (Max): 30V Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz Operating Temperature: 125°C (TJ) Diode Type: PIN - Single Package / Case: SC-76, SOD-323 Packaging: Cut Tape (CT) |
на замовлення 8031 шт: термін постачання 21-31 дні (днів) |
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RN2501(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.3W SMV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN2905FE,LF(CB | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.1W ES6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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HN2C01FU-GR(T5L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN 50V 0.15A US6 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RN4906FE,LF(CB | Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP PREBIAS 0.1W ES6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC2714-O(TE85L,F) | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 30V 550MHZ S MINI Operating Temperature: 125°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: S-Mini Noise Figure (dB Typ @ f): 2.5dB @ 100MHz Frequency - Transition: 550MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V Voltage - Collector Emitter Breakdown (Max): 30V Current - Collector (Ic) (Max): 20mA Power - Max: 100mW Gain: 23dB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN1501(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.3W SMV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC4207-BL(TE85L,F | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN 50V 0.15A SMVSupplier Device Package: SMV Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 150mA Power - Max: 300mW Operating Temperature: 125°C (TJ) Transistor Type: 2 NPN (Dual) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC5108-Y,LF | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 10V 6GHZ SSM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN1607(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.3W SM6Supplier Device Package: SM6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 10kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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2SA1162-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A S-MINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
на замовлення 18972 шт: термін постачання 21-31 дні (днів) |
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RN1502(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.3W SMVSupplier Device Package: SMV Resistor - Emitter Base (R2): 10kOhms Resistor - Base (R1): 10kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 51559 шт: термін постачання 21-31 дні (днів) |
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RN4605(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP PREBIAS 0.3W SM6 |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TC7SET17FU,LF | Toshiba Semiconductor and Storage |
Description: IC GATE SMV L-MOS USV |
на замовлення 1193 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RN2102,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SSMResistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 10 kOhms Frequency - Transition: 200 MHz Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SSM DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Cut Tape (CT) |
на замовлення 2970 шт: термін постачання 21-31 дні (днів) |
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TC75W57FU,LF | Toshiba Semiconductor and Storage |
Description: IC COMPARATOR 2 GEN PUR 8SSOPSupplier Device Package: 8-SSOP Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V Current - Output (Typ): 25mA Current - Input Bias (Max): 1pA @ 5V Voltage - Input Offset (Max): 7mV @ 5V Current - Quiescent (Max): 400µA Propagation Delay (Max): 140ns Operating Temperature: -40°C ~ 85°C Type: General Purpose Number of Elements: 2 Mounting Type: Surface Mount Output Type: Push-Pull Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Packaging: Cut Tape (CT) |
на замовлення 1465 шт: термін постачання 21-31 дні (днів) |
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RN1706JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.1W ESVVce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: ESV Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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HN2D01FU(TE85L,F) | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 80MA US6 Current - Reverse Leakage @ Vr: 500 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: US6 Current - Average Rectified (Io) (per Diode): 80mA Diode Configuration: 3 Independent Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SA1586-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SC-70Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
на замовлення 6801 шт: термін постачання 21-31 дні (днів) |
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HN1B01F-GR(TE85L,F | Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP 50V 0.15A SM6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC75S57FU(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC COMPARATOR 1 GEN PUR 5SSOPPart Status: Active Current - Output (Typ): 25mA Current - Input Bias (Max): 1pA Voltage - Input Offset (Max): 7mV @ 5V Current - Quiescent (Max): 220µA Propagation Delay (Max): 140ns Supplier Device Package: 5-SSOP Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V Operating Temperature: -40°C ~ 85°C Type: General Purpose Number of Elements: 1 Mounting Type: Surface Mount Output Type: Push-Pull Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) |
на замовлення 25633 шт: термін постачання 21-31 дні (днів) |
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HN1B01F-Y(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP 50V 0.15A SM6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN2502(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.3W SMVPart Status: Active Supplier Device Package: SMV Resistor - Emitter Base (R2): 10kOhms Resistor - Base (R1): 10kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 2770 шт: термін постачання 21-31 дні (днів) |
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TC75S54FU(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC OPAMP GP 1 CIRCUIT 5SSOPVoltage - Supply Span (Max): 7 V Voltage - Supply Span (Min): 1.8 V Current - Output / Channel: 700 µA Number of Circuits: 1 Part Status: Active Supplier Device Package: 5-SSOP Voltage - Input Offset: 2 mV Current - Input Bias: 1 pA Slew Rate: 0.7V/µs Current - Supply: 100µA Operating Temperature: -40°C ~ 85°C Amplifier Type: General Purpose Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TC7SH126FU(T5L,F,T | Toshiba Semiconductor and Storage |
Description: IC GATE L-MOS USV |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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HN1C03FU-B(TE85L,F | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN 20V 0.3A US6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN4986FE(T5L,F,T) | Toshiba Semiconductor and Storage |
Description: TRAN DUAL NPN/PNP 50V 100MA ES6 |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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2SC4738-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A SSMTransistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Cut Tape (CT) Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Active Supplier Device Package: SSM Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Operating Temperature: 125°C (TJ) |
на замовлення 1631 шт: термін постачання 21-31 дні (днів) |
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TC75W51FK(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC CMOS 2 CIRCUIT 8SSOPVoltage - Supply Span (Max): 7 V Voltage - Supply Span (Min): 1.5 V Number of Circuits: 2 Supplier Device Package: 8-SSOP Voltage - Input Offset: 2 mV Current - Input Bias: 1 pA Gain Bandwidth Product: 600 kHz Slew Rate: 0.5V/µs Current - Supply: 120µA Operating Temperature: -40°C ~ 85°C Amplifier Type: CMOS Mounting Type: Surface Mount Package / Case: 8-VFSOP (0.091", 2.30mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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HN1A01F-GR(TE85L,F | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP 50V 0.15A SM6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC5066-Y,LF | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 12V 7GHZ SSM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SA1182-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 30V 0.5A S-MINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 150 mW |
на замовлення 2631 шт: термін постачання 21-31 дні (днів) |
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TC7SH17FU,LF | Toshiba Semiconductor and Storage |
Description: IC SNGL SCHM BUFFER USV |
на замовлення 2474 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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2SA1298-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 25V 0.8A S-MINIFrequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 25 V Current - Collector (Ic) (Max): 800 mA Part Status: Active Supplier Device Package: S-Mini |
на замовлення 1391 шт: термін постачання 21-31 дні (днів) |
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| HN1D02FE,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA ES6
Description: DIODE ARRAY GP 80V 100MA ES6
товару немає в наявності
В кошику
од. на суму грн.
| RN1504(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Description: TRANS 2NPN PREBIAS 0.3W SMV
товару немає в наявності
В кошику
од. на суму грн.
| RN1702JE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ESV
Description: TRANS 2NPN PREBIAS 0.1W ESV
на замовлення 1214 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 34.81 грн |
| 13+ | 24.76 грн |
| 100+ | 14.05 грн |
| 500+ | 8.73 грн |
| 1000+ | 6.69 грн |
| RN1111,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Description: TRANS PREBIAS NPN 50V 0.1A SSM
на замовлення 2089 шт:
термін постачання 21-31 дні (днів)
| HN1A01F-Y(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A SM6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 300mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SM6
Description: TRANS 2PNP 50V 0.15A SM6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 300mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SM6
товару немає в наявності
В кошику
од. на суму грн.
| 2SA1162-O,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
на замовлення 2816 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 27+ | 11.87 грн |
| 46+ | 6.70 грн |
| 100+ | 4.11 грн |
| 500+ | 2.80 грн |
| 1000+ | 2.46 грн |
| 2SC5087R(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 8GHZ SMQ
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2dB @ 1GHz
Supplier Device Package: SMQ
Part Status: Active
Description: RF TRANS NPN 12V 8GHZ SMQ
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2dB @ 1GHz
Supplier Device Package: SMQ
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| RN1505(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Description: TRANS 2NPN PREBIAS 0.3W SMV
товару немає в наявності
В кошику
од. на суму грн.
| RN2903(T5L,F,T) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRAN DUAL PNP US6 -50V -100A
Description: TRAN DUAL PNP US6 -50V -100A
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| TC75S59FE(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR ESV
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 220µA
Propagation Delay (Max): 200ns
Supplier Device Package: ESV
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Open-Drain
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA
Description: IC COMPARATOR 1 GEN PUR ESV
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 220µA
Propagation Delay (Max): 200ns
Supplier Device Package: ESV
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Open-Drain
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA
товару немає в наявності
В кошику
од. на суму грн.
| RN1506(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Description: TRANS 2NPN PREBIAS 0.3W SMV
товару немає в наявності
В кошику
од. на суму грн.
| RN1603(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Description: TRANS 2NPN PREBIAS 0.3W SM6
товару немає в наявності
В кошику
од. на суму грн.
| RN1606(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Description: TRANS 2NPN PREBIAS 0.3W SM6
на замовлення 390 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 36.39 грн |
| 12+ | 25.75 грн |
| 100+ | 14.59 грн |
| RN1409(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRAN NPN S-MINI 50V 100A
Description: TRAN NPN S-MINI 50V 100A
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)
| RN1414,LF(B |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.2W S-MINI
Description: TRANS PREBIAS NPN 0.2W S-MINI
на замовлення 5195 шт:
термін постачання 21-31 дні (днів)
| TC75S57F,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR SMV
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 220µA
Propagation Delay (Max): 140ns
Supplier Device Package: SMV
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: IC COMPARATOR 1 GEN PUR SMV
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 220µA
Propagation Delay (Max): 140ns
Supplier Device Package: SMV
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 1003 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 37.18 грн |
| 11+ | 28.72 грн |
| 25+ | 26.33 грн |
| 100+ | 18.39 грн |
| 250+ | 16.67 грн |
| 500+ | 13.79 грн |
| 1000+ | 10.18 грн |
| HN1D03FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 80MA US6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: US6
Current - Average Rectified (Io) (per Diode): 80mA
Diode Configuration: 2 Pair CA + CC
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: DIODE ARRAY GP 80V 80MA US6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: US6
Current - Average Rectified (Io) (per Diode): 80mA
Diode Configuration: 2 Pair CA + CC
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 4415 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 25.32 грн |
| 18+ | 17.07 грн |
| 100+ | 8.65 грн |
| 500+ | 6.62 грн |
| 1000+ | 4.91 грн |
| RN2706JE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Description: TRANS 2PNP PREBIAS 0.1W ESV
товару немає в наявності
В кошику
од. на суму грн.
| RN1901,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 1kOhms
Supplier Device Package: US6
Description: TRANS PREBIAS 2NPN 50V 100MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 1kOhms
Supplier Device Package: US6
на замовлення 3291 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 15.82 грн |
| 34+ | 9.07 грн |
| 100+ | 5.61 грн |
| 500+ | 3.85 грн |
| 1000+ | 3.39 грн |
| RN4902FE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
товару немає в наявності
В кошику
од. на суму грн.
| RN2702JE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Description: TRANS 2PNP PREBIAS 0.1W ESV
товару немає в наявності
В кошику
од. на суму грн.
| RN4905FE,LF(CB |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
на замовлення 3880 шт:
термін постачання 21-31 дні (днів)
| HN1C03F-B(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 20V 0.3A SM6
Description: TRANS 2NPN 20V 0.3A SM6
на замовлення 2723 шт:
термін постачання 21-31 дні (днів)
| 2SA1586-GR,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS PNP 50V 0.15A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
на замовлення 4393 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 27+ | 11.87 грн |
| 46+ | 6.70 грн |
| 100+ | 4.11 грн |
| 500+ | 2.80 грн |
| 1000+ | 2.46 грн |
| 2SC5087-O(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SMQ
Description: RF TRANS NPN 12V 7GHZ SMQ
товару немає в наявності
В кошику
од. на суму грн.
| TC75S56F,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR SMV
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 22µA
Propagation Delay (Max): 680ns
Supplier Device Package: SMV
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 1
Description: IC COMPARATOR 1 GEN PUR SMV
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 22µA
Propagation Delay (Max): 680ns
Supplier Device Package: SMV
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 1
на замовлення 13522 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 36.39 грн |
| 11+ | 28.04 грн |
| 25+ | 25.72 грн |
| 100+ | 17.95 грн |
| 250+ | 16.27 грн |
| 500+ | 13.46 грн |
| 1000+ | 9.93 грн |
| 1SV307(TPH3,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: RF DIODE PIN 30V USC
Current - Max: 50 mA
Supplier Device Package: USC
Voltage - Peak Reverse (Max): 30V
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: PIN - Single
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Description: RF DIODE PIN 30V USC
Current - Max: 50 mA
Supplier Device Package: USC
Voltage - Peak Reverse (Max): 30V
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: PIN - Single
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
на замовлення 8031 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 26.90 грн |
| 18+ | 17.22 грн |
| 100+ | 9.88 грн |
| 500+ | 8.09 грн |
| 1000+ | 7.31 грн |
| RN2501(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
Description: TRANS 2PNP PREBIAS 0.3W SMV
товару немає в наявності
В кошику
од. на суму грн.
| RN2905FE,LF(CB |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Description: TRANS 2PNP PREBIAS 0.1W ES6
товару немає в наявності
В кошику
од. на суму грн.
| HN2C01FU-GR(T5L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A US6
Description: TRANS 2NPN 50V 0.15A US6
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| RN4906FE,LF(CB |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
товару немає в наявності
В кошику
од. на суму грн.
| 2SC2714-O(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 30V 550MHZ S MINI
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: S-Mini
Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
Frequency - Transition: 550MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 20mA
Power - Max: 100mW
Gain: 23dB
Description: RF TRANS NPN 30V 550MHZ S MINI
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: S-Mini
Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
Frequency - Transition: 550MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 20mA
Power - Max: 100mW
Gain: 23dB
товару немає в наявності
В кошику
од. на суму грн.
| RN1501(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Description: TRANS 2NPN PREBIAS 0.3W SMV
товару немає в наявності
В кошику
од. на суму грн.
| 2SC4207-BL(TE85L,F |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A SMV
Supplier Device Package: SMV
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 300mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: TRANS 2NPN 50V 0.15A SMV
Supplier Device Package: SMV
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 300mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| 2SC5108-Y,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 10V 6GHZ SSM
Description: RF TRANS NPN 10V 6GHZ SSM
товару немає в наявності
В кошику
од. на суму грн.
| RN1607(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Description: TRANS 2NPN PREBIAS 0.3W SM6
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 26.90 грн |
| 20+ | 15.77 грн |
| 100+ | 9.91 грн |
| 500+ | 6.92 грн |
| 1000+ | 6.15 грн |
| 2SA1162-Y,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
на замовлення 18972 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 27+ | 11.87 грн |
| 46+ | 6.70 грн |
| 100+ | 4.11 грн |
| 500+ | 2.80 грн |
| 1000+ | 2.46 грн |
| RN1502(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Supplier Device Package: SMV
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: TRANS 2NPN PREBIAS 0.3W SMV
Supplier Device Package: SMV
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 51559 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 27.69 грн |
| 19+ | 16.15 грн |
| 100+ | 10.15 грн |
| 500+ | 7.08 грн |
| 1000+ | 6.29 грн |
| RN4605(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
| TC7SET17FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE SMV L-MOS USV
Description: IC GATE SMV L-MOS USV
на замовлення 1193 шт:
термін постачання 21-31 дні (днів)
| RN2102,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
на замовлення 2970 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 24+ | 13.45 грн |
| 39+ | 7.92 грн |
| 100+ | 4.91 грн |
| 500+ | 3.35 грн |
| 1000+ | 2.94 грн |
| TC75W57FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 2 GEN PUR 8SSOP
Supplier Device Package: 8-SSOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 400µA
Propagation Delay (Max): 140ns
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
Description: IC COMPARATOR 2 GEN PUR 8SSOP
Supplier Device Package: 8-SSOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA @ 5V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 400µA
Propagation Delay (Max): 140ns
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
на замовлення 1465 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 77.53 грн |
| 10+ | 45.25 грн |
| 25+ | 37.54 грн |
| 100+ | 27.05 грн |
| 250+ | 23.02 грн |
| 500+ | 20.54 грн |
| 1000+ | 18.16 грн |
| RN1706JE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ESV
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Description: TRANS 2NPN PREBIAS 0.1W ESV
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
товару немає в наявності
В кошику
од. на суму грн.
| HN2D01FU(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 80MA US6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: US6
Current - Average Rectified (Io) (per Diode): 80mA
Diode Configuration: 3 Independent
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: DIODE ARRAY GP 80V 80MA US6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: US6
Current - Average Rectified (Io) (per Diode): 80mA
Diode Configuration: 3 Independent
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| 2SA1586-Y,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS PNP 50V 0.15A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
на замовлення 6801 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 27+ | 11.87 грн |
| 46+ | 6.70 грн |
| 100+ | 4.11 грн |
| 500+ | 2.80 грн |
| 1000+ | 2.46 грн |
| HN1B01F-GR(TE85L,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A SM6
Description: TRANS NPN/PNP 50V 0.15A SM6
товару немає в наявності
В кошику
од. на суму грн.
| TC75S57FU(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR 5SSOP
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 220µA
Propagation Delay (Max): 140ns
Supplier Device Package: 5-SSOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Description: IC COMPARATOR 1 GEN PUR 5SSOP
Part Status: Active
Current - Output (Typ): 25mA
Current - Input Bias (Max): 1pA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Quiescent (Max): 220µA
Propagation Delay (Max): 140ns
Supplier Device Package: 5-SSOP
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Operating Temperature: -40°C ~ 85°C
Type: General Purpose
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
на замовлення 25633 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 30.06 грн |
| 13+ | 25.14 грн |
| 25+ | 23.47 грн |
| 100+ | 17.60 грн |
| 250+ | 16.35 грн |
| 500+ | 13.83 грн |
| 1000+ | 10.51 грн |
| HN1B01F-Y(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A SM6
Description: TRANS NPN/PNP 50V 0.15A SM6
товару немає в наявності
В кошику
од. на суму грн.
| RN2502(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
Part Status: Active
Supplier Device Package: SMV
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: TRANS 2PNP PREBIAS 0.3W SMV
Part Status: Active
Supplier Device Package: SMV
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 2770 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 37.18 грн |
| 12+ | 26.36 грн |
| 100+ | 14.93 грн |
| 500+ | 9.28 грн |
| 1000+ | 7.11 грн |
| TC75S54FU(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 1 CIRCUIT 5SSOP
Voltage - Supply Span (Max): 7 V
Voltage - Supply Span (Min): 1.8 V
Current - Output / Channel: 700 µA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 5-SSOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 1 pA
Slew Rate: 0.7V/µs
Current - Supply: 100µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Description: IC OPAMP GP 1 CIRCUIT 5SSOP
Voltage - Supply Span (Max): 7 V
Voltage - Supply Span (Min): 1.8 V
Current - Output / Channel: 700 µA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 5-SSOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 1 pA
Slew Rate: 0.7V/µs
Current - Supply: 100µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 38.77 грн |
| 11+ | 30.17 грн |
| 25+ | 27.55 грн |
| 100+ | 19.25 грн |
| 250+ | 17.44 грн |
| 500+ | 14.44 грн |
| 1000+ | 10.65 грн |
| TC7SH126FU(T5L,F,T |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE L-MOS USV
Description: IC GATE L-MOS USV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| HN1C03FU-B(TE85L,F |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 20V 0.3A US6
Description: TRANS 2NPN 20V 0.3A US6
товару немає в наявності
В кошику
од. на суму грн.
| RN4986FE(T5L,F,T) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRAN DUAL NPN/PNP 50V 100MA ES6
Description: TRAN DUAL NPN/PNP 50V 100MA ES6
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
| 2SC4738-GR,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SSM
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SSM
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Description: TRANS NPN 50V 0.15A SSM
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SSM
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
на замовлення 1631 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 27+ | 11.87 грн |
| 42+ | 7.39 грн |
| 100+ | 4.56 грн |
| 500+ | 3.11 грн |
| 1000+ | 2.73 грн |
| TC75W51FK(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC CMOS 2 CIRCUIT 8SSOP
Voltage - Supply Span (Max): 7 V
Voltage - Supply Span (Min): 1.5 V
Number of Circuits: 2
Supplier Device Package: 8-SSOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 600 kHz
Slew Rate: 0.5V/µs
Current - Supply: 120µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
Description: IC CMOS 2 CIRCUIT 8SSOP
Voltage - Supply Span (Max): 7 V
Voltage - Supply Span (Min): 1.5 V
Number of Circuits: 2
Supplier Device Package: 8-SSOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 600 kHz
Slew Rate: 0.5V/µs
Current - Supply: 120µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| HN1A01F-GR(TE85L,F |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A SM6
Description: TRANS 2PNP 50V 0.15A SM6
товару немає в наявності
В кошику
од. на суму грн.
| 2SC5066-Y,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SSM
Description: RF TRANS NPN 12V 7GHZ SSM
товару немає в наявності
В кошику
од. на суму грн.
| 2SA1182-Y,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 30V 0.5A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Description: TRANS PNP 30V 0.5A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
на замовлення 2631 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 17+ | 18.99 грн |
| 28+ | 11.28 грн |
| 100+ | 7.03 грн |
| 500+ | 4.85 грн |
| 1000+ | 4.28 грн |
| TC7SH17FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC SNGL SCHM BUFFER USV
Description: IC SNGL SCHM BUFFER USV
на замовлення 2474 шт:
термін постачання 21-31 дні (днів)
| 2SA1298-Y,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 25V 0.8A S-MINI
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: S-Mini
Description: TRANS PNP 25V 0.8A S-MINI
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: S-Mini
на замовлення 1391 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 24.53 грн |
| 22+ | 14.40 грн |
| 100+ | 9.06 грн |
| 500+ | 6.31 грн |
| 1000+ | 5.60 грн |























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