Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13582) > Сторінка 73 з 227
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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RN2706JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.1W ESV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN1901,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 2NPN 50V 100MA US6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 1kOhms Supplier Device Package: US6 |
на замовлення 3291 шт: термін постачання 21-31 дні (днів) |
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RN4902FE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP PREBIAS 0.1W ES6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN2702JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.1W ESV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN4905FE,LF(CB | Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP PREBIAS 0.1W ES6 |
на замовлення 3880 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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HN1C03F-B(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN 20V 0.3A SM6 |
на замовлення 2723 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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2SA1586-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SC-70Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
на замовлення 4393 шт: термін постачання 21-31 дні (днів) |
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2SC5087-O(TE85L,F) | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 12V 7GHZ SMQ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC75S56F,LF | Toshiba Semiconductor and Storage |
Description: IC COMPARATOR 1 GEN PUR SMVPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Type: General Purpose Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V Supplier Device Package: SMV Propagation Delay (Max): 680ns Current - Quiescent (Max): 22µA Voltage - Input Offset (Max): 7mV @ 5V Current - Input Bias (Max): 1pA @ 5V Current - Output (Typ): 25mA Part Status: Active |
на замовлення 13522 шт: термін постачання 21-31 дні (днів) |
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1SV307(TPH3,F) | Toshiba Semiconductor and Storage |
Description: RF DIODE PIN 30V USCPackaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Diode Type: PIN - Single Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 30V Supplier Device Package: USC Current - Max: 50 mA |
на замовлення 5673 шт: термін постачання 21-31 дні (днів) |
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RN2501(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.3W SMV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN2905FE,LF(CB | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.1W ES6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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HN2C01FU-GR(T5L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN 50V 0.15A US6 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RN4906FE,LF(CB | Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP PREBIAS 0.1W ES6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC2714-O(TE85L,F) | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 30V 550MHZ S MINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Gain: 23dB Power - Max: 100mW Current - Collector (Ic) (Max): 20mA Voltage - Collector Emitter Breakdown (Max): 30V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V Frequency - Transition: 550MHz Noise Figure (dB Typ @ f): 2.5dB @ 100MHz Supplier Device Package: S-Mini Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN1501(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.3W SMV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC4207-BL(TE85L,F | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN 50V 0.15A SMVPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 125°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SMV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC5108-Y,LF | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 10V 6GHZ SSM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN1607(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.3W SM6Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SM6 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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2SA1162-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A S-MINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
на замовлення 18972 шт: термін постачання 21-31 дні (днів) |
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RN1502(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.3W SMVPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SMV |
на замовлення 51559 шт: термін постачання 21-31 дні (днів) |
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RN4605(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP PREBIAS 0.3W SM6 |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TC7SET17FU,LF | Toshiba Semiconductor and Storage |
Description: IC GATE SMV L-MOS USV |
на замовлення 1193 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RN2102,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SSMPackaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: SSM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms |
на замовлення 2970 шт: термін постачання 21-31 дні (днів) |
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TC75W57FU,LF | Toshiba Semiconductor and Storage |
Description: IC COMPARATOR 2 GEN PUR 8SSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 2 Type: General Purpose Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V Supplier Device Package: 8-SSOP Propagation Delay (Max): 140ns Current - Quiescent (Max): 400µA Voltage - Input Offset (Max): 7mV @ 5V Current - Input Bias (Max): 1pA @ 5V Current - Output (Typ): 25mA |
на замовлення 1465 шт: термін постачання 21-31 дні (днів) |
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RN1706JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.1W ESVPackaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ESV Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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HN2D01FU(TE85L,F) | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 80MA US6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 3 Independent Current - Average Rectified (Io) (per Diode): 80mA Supplier Device Package: US6 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SA1586-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SC-70Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
на замовлення 6801 шт: термін постачання 21-31 дні (днів) |
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HN1B01F-GR(TE85L,F | Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP 50V 0.15A SM6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC75S57FU(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC COMPARATOR 1 GEN PUR 5SSOPPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Type: General Purpose Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V Supplier Device Package: 5-SSOP Propagation Delay (Max): 140ns Current - Quiescent (Max): 220µA Voltage - Input Offset (Max): 7mV @ 5V Current - Input Bias (Max): 1pA Current - Output (Typ): 25mA Part Status: Active |
на замовлення 25633 шт: термін постачання 21-31 дні (днів) |
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HN1B01F-Y(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP 50V 0.15A SM6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN2502(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.3W SMVPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SMV Part Status: Active |
на замовлення 2770 шт: термін постачання 21-31 дні (днів) |
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TC75S54FU(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC OPAMP GP 1 CIRCUIT 5SSOPPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 100µA Slew Rate: 0.7V/µs Current - Input Bias: 1 pA Voltage - Input Offset: 2 mV Supplier Device Package: 5-SSOP Part Status: Active Number of Circuits: 1 Current - Output / Channel: 700 µA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 7 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TC7SH126FU(T5L,F,T | Toshiba Semiconductor and Storage |
Description: IC GATE L-MOS USV |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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HN1C03FU-B(TE85L,F | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN 20V 0.3A US6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN4986FE(T5L,F,T) | Toshiba Semiconductor and Storage |
Description: TRAN DUAL NPN/PNP 50V 100MA ES6 |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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2SC4738-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A SSMPackaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SSM Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
на замовлення 1631 шт: термін постачання 21-31 дні (днів) |
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TC75W51FK(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC CMOS 2 CIRCUIT 8SSOPPackaging: Cut Tape (CT) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 85°C Current - Supply: 120µA Slew Rate: 0.5V/µs Gain Bandwidth Product: 600 kHz Current - Input Bias: 1 pA Voltage - Input Offset: 2 mV Supplier Device Package: 8-SSOP Number of Circuits: 2 Voltage - Supply Span (Min): 1.5 V Voltage - Supply Span (Max): 7 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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HN1A01F-GR(TE85L,F | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP 50V 0.15A SM6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC5066-Y,LF | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 12V 7GHZ SSM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SA1182-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 30V 0.5A S-MINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 150 mW |
на замовлення 2631 шт: термін постачання 21-31 дні (днів) |
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TC7SH17FU,LF | Toshiba Semiconductor and Storage |
Description: IC SNGL SCHM BUFFER USV |
на замовлення 2474 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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2SA1298-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 25V 0.8A S-MINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 120MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 200 mW |
на замовлення 1015 шт: термін постачання 21-31 дні (днів) |
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1SS412(TE85L,F) | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA USM |
на замовлення 148 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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1SS362FV,L3F | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA VESMPackaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: VESM Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 225047 шт: термін постачання 21-31 дні (днів) |
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1SS361FV,L3F | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA VESMPackaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: VESM Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 2724 шт: термін постачання 21-31 дні (днів) |
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TC7SPN3125TU,LF | Toshiba Semiconductor and Storage |
Description: BUS BUFFER UNI UF6 |
на замовлення 2855 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TC75S58FE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: CMOS TYPE OP AMP ESV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
TC75W58FU,LF | Toshiba Semiconductor and Storage |
Description: IC COMP GP CMOS DUAL SM8 |
на замовлення 3173 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
|
TC75W59FU,LF | Toshiba Semiconductor and Storage |
Description: CMOS TYPE OP AMP IC DUAL SM8 |
на замовлення 2448 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
|
TC7SPN3125CFC(T5L) | Toshiba Semiconductor and Storage |
Description: DUAL SUPPLY BUS BUFFER UNI CST6C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
TC7SET34FU(T5L,F,T | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERTER USV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
74VHC574FT(BE) | Toshiba Semiconductor and Storage |
Description: IC D-TYPE POS TRG SNGL 20TSSOP |
на замовлення 3441 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
|
74VHCT574AFT(BE) | Toshiba Semiconductor and Storage |
Description: IC D-TYPE POS TRG SNGL 20TSSOP |
на замовлення 3011 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
|
TC7SH34FU(T5L,F,T) | Toshiba Semiconductor and Storage |
Description: IC GATE L-MOS USV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
74VHCT240AFT(BE) | Toshiba Semiconductor and Storage |
Description: IC INVERTER DUAL 4-INPUT 20TSSOP |
на замовлення 2391 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
|
74VHCT573AFT(BE) | Toshiba Semiconductor and Storage |
Description: IC LATCH OCTAL D-TYPE 20-TSSOP |
на замовлення 2394 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
|
TC7SP3125TU,LF | Toshiba Semiconductor and Storage |
Description: SUPPLY BUS BUFFER UNI UF6 |
на замовлення 1461 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
|
JDP4P02AT(TE85L) | Toshiba Semiconductor and Storage |
Description: SWITCHING DIODE 30V INDEPENDENT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
RN2511(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.3W SMV |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| RN2706JE(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Description: TRANS 2PNP PREBIAS 0.1W ESV
товару немає в наявності
В кошику
од. на суму грн.
| RN1901,LF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 1kOhms
Supplier Device Package: US6
Description: TRANS PREBIAS 2NPN 50V 100MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 1kOhms
Supplier Device Package: US6
на замовлення 3291 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.43 грн |
| 34+ | 8.84 грн |
| 100+ | 5.47 грн |
| 500+ | 3.75 грн |
| 1000+ | 3.31 грн |
| RN4902FE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
товару немає в наявності
В кошику
од. на суму грн.
| RN2702JE(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Description: TRANS 2PNP PREBIAS 0.1W ESV
товару немає в наявності
В кошику
од. на суму грн.
| RN4905FE,LF(CB |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
на замовлення 3880 шт:
термін постачання 21-31 дні (днів)
| HN1C03F-B(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 20V 0.3A SM6
Description: TRANS 2NPN 20V 0.3A SM6
на замовлення 2723 шт:
термін постачання 21-31 дні (днів)
| 2SA1586-GR,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS PNP 50V 0.15A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
на замовлення 4393 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.57 грн |
| 46+ | 6.54 грн |
| 100+ | 4.01 грн |
| 500+ | 2.73 грн |
| 1000+ | 2.40 грн |
| 2SC5087-O(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SMQ
Description: RF TRANS NPN 12V 7GHZ SMQ
товару немає в наявності
В кошику
од. на суму грн.
| TC75S56F,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: SMV
Propagation Delay (Max): 680ns
Current - Quiescent (Max): 22µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 25mA
Part Status: Active
Description: IC COMPARATOR 1 GEN PUR SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: SMV
Propagation Delay (Max): 680ns
Current - Quiescent (Max): 22µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 25mA
Part Status: Active
на замовлення 13522 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.48 грн |
| 11+ | 27.33 грн |
| 25+ | 25.08 грн |
| 100+ | 17.50 грн |
| 250+ | 15.86 грн |
| 500+ | 13.13 грн |
| 1000+ | 9.68 грн |
| 1SV307(TPH3,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: RF DIODE PIN 30V USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: USC
Current - Max: 50 mA
Description: RF DIODE PIN 30V USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: USC
Current - Max: 50 mA
на замовлення 5673 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.11 грн |
| 35+ | 8.62 грн |
| 40+ | 7.61 грн |
| 100+ | 6.09 грн |
| 250+ | 5.58 грн |
| 500+ | 5.28 грн |
| 1000+ | 4.95 грн |
| RN2501(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
Description: TRANS 2PNP PREBIAS 0.3W SMV
товару немає в наявності
В кошику
од. на суму грн.
| RN2905FE,LF(CB |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Description: TRANS 2PNP PREBIAS 0.1W ES6
товару немає в наявності
В кошику
од. на суму грн.
| HN2C01FU-GR(T5L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A US6
Description: TRANS 2NPN 50V 0.15A US6
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| RN4906FE,LF(CB |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
товару немає в наявності
В кошику
од. на суму грн.
| 2SC2714-O(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 30V 550MHZ S MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 23dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Description: RF TRANS NPN 30V 550MHZ S MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 23dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 30V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
Supplier Device Package: S-Mini
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| RN1501(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Description: TRANS 2NPN PREBIAS 0.3W SMV
товару немає в наявності
В кошику
од. на суму грн.
| 2SC4207-BL(TE85L,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
Description: TRANS 2NPN 50V 0.15A SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SMV
товару немає в наявності
В кошику
од. на суму грн.
| 2SC5108-Y,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 10V 6GHZ SSM
Description: RF TRANS NPN 10V 6GHZ SSM
товару немає в наявності
В кошику
од. на суму грн.
| RN1607(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
Description: TRANS 2NPN PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.22 грн |
| 20+ | 15.37 грн |
| 100+ | 9.66 грн |
| 500+ | 6.74 грн |
| 1000+ | 5.99 грн |
| 2SA1162-Y,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
на замовлення 18972 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.57 грн |
| 46+ | 6.54 грн |
| 100+ | 4.01 грн |
| 500+ | 2.73 грн |
| 1000+ | 2.40 грн |
| RN1502(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SMV
Description: TRANS 2NPN PREBIAS 0.3W SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SMV
на замовлення 51559 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.00 грн |
| 19+ | 15.75 грн |
| 100+ | 9.89 грн |
| 500+ | 6.91 грн |
| 1000+ | 6.14 грн |
| RN4605(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
| TC7SET17FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE SMV L-MOS USV
Description: IC GATE SMV L-MOS USV
на замовлення 1193 шт:
термін постачання 21-31 дні (днів)
| RN2102,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 2970 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.11 грн |
| 39+ | 7.72 грн |
| 100+ | 4.78 грн |
| 500+ | 3.26 грн |
| 1000+ | 2.87 грн |
| TC75W57FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 2 GEN PUR 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: 8-SSOP
Propagation Delay (Max): 140ns
Current - Quiescent (Max): 400µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 25mA
Description: IC COMPARATOR 2 GEN PUR 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: 8-SSOP
Propagation Delay (Max): 140ns
Current - Quiescent (Max): 400µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA @ 5V
Current - Output (Typ): 25mA
на замовлення 1465 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 75.59 грн |
| 10+ | 44.12 грн |
| 25+ | 36.60 грн |
| 100+ | 26.37 грн |
| 250+ | 22.44 грн |
| 500+ | 20.03 грн |
| 1000+ | 17.71 грн |
| RN1706JE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
Description: TRANS 2NPN PREBIAS 0.1W ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| HN2D01FU(TE85L,F) |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 80MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: US6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 80MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: US6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
товару немає в наявності
В кошику
од. на суму грн.
| 2SA1586-Y,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS PNP 50V 0.15A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
на замовлення 6801 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.57 грн |
| 46+ | 6.54 грн |
| 100+ | 4.01 грн |
| 500+ | 2.73 грн |
| 1000+ | 2.40 грн |
| HN1B01F-GR(TE85L,F |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A SM6
Description: TRANS NPN/PNP 50V 0.15A SM6
товару немає в наявності
В кошику
од. на суму грн.
| TC75S57FU(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: 5-SSOP
Propagation Delay (Max): 140ns
Current - Quiescent (Max): 220µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA
Current - Output (Typ): 25mA
Part Status: Active
Description: IC COMPARATOR 1 GEN PUR 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 7V, ±0.9V ~ 3.5V
Supplier Device Package: 5-SSOP
Propagation Delay (Max): 140ns
Current - Quiescent (Max): 220µA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA
Current - Output (Typ): 25mA
Part Status: Active
на замовлення 25633 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.31 грн |
| 13+ | 24.51 грн |
| 25+ | 22.88 грн |
| 100+ | 17.16 грн |
| 250+ | 15.94 грн |
| 500+ | 13.49 грн |
| 1000+ | 10.25 грн |
| HN1B01F-Y(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A SM6
Description: TRANS NPN/PNP 50V 0.15A SM6
товару немає в наявності
В кошику
од. на суму грн.
| RN2502(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SMV
Part Status: Active
Description: TRANS 2PNP PREBIAS 0.3W SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SMV
Part Status: Active
на замовлення 2770 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.25 грн |
| 12+ | 25.70 грн |
| 100+ | 14.56 грн |
| 500+ | 9.05 грн |
| 1000+ | 6.94 грн |
| TC75S54FU(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 1 CIRCUIT 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 100µA
Slew Rate: 0.7V/µs
Current - Input Bias: 1 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 5-SSOP
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 700 µA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 7 V
Description: IC OPAMP GP 1 CIRCUIT 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 100µA
Slew Rate: 0.7V/µs
Current - Input Bias: 1 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 5-SSOP
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 700 µA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 7 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.79 грн |
| 11+ | 29.41 грн |
| 25+ | 26.86 грн |
| 100+ | 18.76 грн |
| 250+ | 17.01 грн |
| 500+ | 14.07 грн |
| 1000+ | 10.38 грн |
| TC7SH126FU(T5L,F,T |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE L-MOS USV
Description: IC GATE L-MOS USV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| HN1C03FU-B(TE85L,F |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 20V 0.3A US6
Description: TRANS 2NPN 20V 0.3A US6
товару немає в наявності
В кошику
од. на суму грн.
| RN4986FE(T5L,F,T) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRAN DUAL NPN/PNP 50V 100MA ES6
Description: TRAN DUAL NPN/PNP 50V 100MA ES6
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
| 2SC4738-GR,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS NPN 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
на замовлення 1631 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.57 грн |
| 42+ | 7.20 грн |
| 100+ | 4.44 грн |
| 500+ | 3.03 грн |
| 1000+ | 2.66 грн |
| TC75W51FK(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC CMOS 2 CIRCUIT 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 120µA
Slew Rate: 0.5V/µs
Gain Bandwidth Product: 600 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SSOP
Number of Circuits: 2
Voltage - Supply Span (Min): 1.5 V
Voltage - Supply Span (Max): 7 V
Description: IC CMOS 2 CIRCUIT 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 120µA
Slew Rate: 0.5V/µs
Gain Bandwidth Product: 600 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SSOP
Number of Circuits: 2
Voltage - Supply Span (Min): 1.5 V
Voltage - Supply Span (Max): 7 V
товару немає в наявності
В кошику
од. на суму грн.
| HN1A01F-GR(TE85L,F |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A SM6
Description: TRANS 2PNP 50V 0.15A SM6
товару немає в наявності
В кошику
од. на суму грн.
| 2SC5066-Y,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SSM
Description: RF TRANS NPN 12V 7GHZ SSM
товару немає в наявності
В кошику
од. на суму грн.
| 2SA1182-Y,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 30V 0.5A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Description: TRANS PNP 30V 0.5A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
на замовлення 2631 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 18.51 грн |
| 28+ | 10.99 грн |
| 100+ | 6.86 грн |
| 500+ | 4.73 грн |
| 1000+ | 4.18 грн |
| TC7SH17FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC SNGL SCHM BUFFER USV
Description: IC SNGL SCHM BUFFER USV
на замовлення 2474 шт:
термін постачання 21-31 дні (днів)
| 2SA1298-Y,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 25V 0.8A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 120MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 200 mW
Description: TRANS PNP 25V 0.8A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 120MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 200 mW
на замовлення 1015 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.00 грн |
| 19+ | 15.97 грн |
| 100+ | 10.05 грн |
| 500+ | 6.99 грн |
| 1000+ | 6.21 грн |
| 1SS412(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA USM
Description: DIODE ARRAY GP 80V 100MA USM
на замовлення 148 шт:
термін постачання 21-31 дні (днів)
| 1SS362FV,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: VESM
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: VESM
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 225047 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 13.88 грн |
| 36+ | 8.32 грн |
| 51+ | 5.93 грн |
| 100+ | 4.83 грн |
| 500+ | 3.52 грн |
| 1SS361FV,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: VESM
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: VESM
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 2724 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 13.88 грн |
| 36+ | 8.32 грн |
| 51+ | 5.93 грн |
| 100+ | 4.83 грн |
| 500+ | 3.52 грн |
| TC7SPN3125TU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: BUS BUFFER UNI UF6
Description: BUS BUFFER UNI UF6
на замовлення 2855 шт:
термін постачання 21-31 дні (днів)
| TC75S58FE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: CMOS TYPE OP AMP ESV
Description: CMOS TYPE OP AMP ESV
товару немає в наявності
В кошику
од. на суму грн.
| TC75W58FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC COMP GP CMOS DUAL SM8
Description: IC COMP GP CMOS DUAL SM8
на замовлення 3173 шт:
термін постачання 21-31 дні (днів)
| TC75W59FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: CMOS TYPE OP AMP IC DUAL SM8
Description: CMOS TYPE OP AMP IC DUAL SM8
на замовлення 2448 шт:
термін постачання 21-31 дні (днів)
| TC7SPN3125CFC(T5L) |
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Виробник: Toshiba Semiconductor and Storage
Description: DUAL SUPPLY BUS BUFFER UNI CST6C
Description: DUAL SUPPLY BUS BUFFER UNI CST6C
товару немає в наявності
В кошику
од. на суму грн.
| TC7SET34FU(T5L,F,T |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTER USV
Description: IC BUFFER NON-INVERTER USV
товару немає в наявності
В кошику
од. на суму грн.
| 74VHC574FT(BE) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC D-TYPE POS TRG SNGL 20TSSOP
Description: IC D-TYPE POS TRG SNGL 20TSSOP
на замовлення 3441 шт:
термін постачання 21-31 дні (днів)
| 74VHCT574AFT(BE) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC D-TYPE POS TRG SNGL 20TSSOP
Description: IC D-TYPE POS TRG SNGL 20TSSOP
на замовлення 3011 шт:
термін постачання 21-31 дні (днів)
| TC7SH34FU(T5L,F,T) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE L-MOS USV
Description: IC GATE L-MOS USV
товару немає в наявності
В кошику
од. на суму грн.
| 74VHCT240AFT(BE) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER DUAL 4-INPUT 20TSSOP
Description: IC INVERTER DUAL 4-INPUT 20TSSOP
на замовлення 2391 шт:
термін постачання 21-31 дні (днів)
| 74VHCT573AFT(BE) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC LATCH OCTAL D-TYPE 20-TSSOP
Description: IC LATCH OCTAL D-TYPE 20-TSSOP
на замовлення 2394 шт:
термін постачання 21-31 дні (днів)
| TC7SP3125TU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: SUPPLY BUS BUFFER UNI UF6
Description: SUPPLY BUS BUFFER UNI UF6
на замовлення 1461 шт:
термін постачання 21-31 дні (днів)
| JDP4P02AT(TE85L) |
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Виробник: Toshiba Semiconductor and Storage
Description: SWITCHING DIODE 30V INDEPENDENT
Description: SWITCHING DIODE 30V INDEPENDENT
товару немає в наявності
В кошику
од. на суму грн.
| RN2511(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
Description: TRANS 2PNP PREBIAS 0.3W SMV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)


















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