Продукція > VISHAY SILICONIX > Всі товари виробника VISHAY SILICONIX (10950) > Сторінка 111 з 183
| Фото | Назва | Виробник | Інформація |
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| SQJ912EP-T1-GE3 | Vishay Siliconix |
 Description: MOSFET 2N-CH 40V 8A 8-SO |
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SQJ940EP-T1_GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 40V 15A PPAK SO-8 |
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SQJ960EP-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 60V 8A 8SO |
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| SQJ962EP-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 60V 8A 8SO |
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| SQM100N04-3M5-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 100A TO-263 |
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SQM120N03-1m5L_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 120A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15605 pF @ 15 V |
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| SQM120N04-1M8-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 120A TO263 |
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SQM120N04-1m9_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 120A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8790 pF @ 25 V |
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SQM120N06-3m5L_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 120A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 29A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14700 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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SQM200N04-1m1L_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 200A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 413 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20655 pF @ 25 V |
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| SQM200N04-1m7L_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 200A TO-263 |
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SQM50N04-4m1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 50A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 30A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6715 pF @ 25 V |
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SQS420EN-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 8A PPAK1212-8 |
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SQS460EN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 8A 1212-8 |
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SQS462EN-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 8A PPAK1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 4.3A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V Qualification: AEC-Q101 |
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SQS482EN-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 16A PPAK1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.4A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 25 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SQS484EN-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 16A PPAK1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 16.4A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1855 pF @ 25 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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SST174-E3 | Vishay Siliconix |
Description: JFET P-CH 30V TO236 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 0V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: TO-236 Part Status: Obsolete Power - Max: 350 mW Resistance - RDS(On): 85 Ohms Voltage - Cutoff (VGS off) @ Id: 5 V @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V |
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SST174-T1-E3 | Vishay Siliconix |
Description: JFET P-CH 30V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 0V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: SOT-23 Part Status: Obsolete Power - Max: 350 mW Resistance - RDS(On): 85 Ohms Voltage - Cutoff (VGS off) @ Id: 5 V @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V |
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SST201-T1-E3 | Vishay Siliconix |
Description: JFET N-CH 40V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: SOT-23 Part Status: Obsolete Power - Max: 350 mW Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 15 V |
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SST204-E3 | Vishay Siliconix |
Description: JFET N-CH 25V .7MA SOT-23 |
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SST204-T1-E3 | Vishay Siliconix |
Description: JFET N-CH 25V 0.35W SOT-23 |
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SST4118-T1-E3 | Vishay Siliconix |
Description: JFET N-CH 40V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: SOT-23 Power - Max: 350 mW Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 80 µA @ 10 V |
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SST4119-T1-E3 | Vishay Siliconix |
Description: JFET N-CH 70V 200UA SOT-23 |
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SST4416-E3 | Vishay Siliconix |
Description: JFET N-CH 30V SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 2.2pF @ 15V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: SOT-23 Part Status: Obsolete Power - Max: 350 mW Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V |
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SST5461-T1-E3 | Vishay Siliconix |
Description: JFET P-CH 40V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: SOT-23 Power - Max: 350 mW Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V |
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SST5462-T1-E3 | Vishay Siliconix |
Description: JFET P-CH 40V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: SOT-23 Power - Max: 350 mW Voltage - Cutoff (VGS off) @ Id: 1.8 V @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V |
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SST5484-E3 | Vishay Siliconix |
 Description: JFET N-CH 25V SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: SOT-23 Part Status: Obsolete Power - Max: 350 mW Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V |
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SST5484-T1-E3 | Vishay Siliconix |
Description: JFET N-CH 25V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: SOT-23 Part Status: Obsolete Power - Max: 350 mW Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V |
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SST5485-E3 | Vishay Siliconix |
Description: JFET N-CH 25V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: SOT-23 Power - Max: 350 mW Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V |
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SST5485-T1-E3 | Vishay Siliconix |
Description: JFET N-CH 25V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: SOT-23 Power - Max: 350 mW Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V |
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SST5486-E3 | Vishay Siliconix |
Description: JFET N-CH 25V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: SOT-23 Power - Max: 350 mW Voltage - Cutoff (VGS off) @ Id: 2 V @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V |
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SST5486-T1-E3 | Vishay Siliconix |
Description: JFET N-CH 25V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: SOT-23 Power - Max: 350 mW Voltage - Cutoff (VGS off) @ Id: 2 V @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V |
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SUD06N10-225L-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 6.5A TO252AA |
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| SUD50N025-09BP-E3 | Vishay Siliconix |
Description: MOSFET N-CH D-S 25V TO252 |
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SUD50N03-06AP-T4E3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 90A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V Power Dissipation (Max): 10W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V |
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SUP53P06-20-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 9.2A/53A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 53A (Tc) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 104.2W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V |
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| SYB85N10-10 | Vishay Siliconix | Description: MOSFET N-CH D-S 100V TO263 |
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| U290 | Vishay Siliconix |
Description: JFET N-CH 30V 0.5W TO-206AC |
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| U290-E3 | Vishay Siliconix |
Description: JFET N-CH 30V 0.5W TO-206AC |
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| U291 | Vishay Siliconix |
Description: JFET N-CH 30V TO206AC Packaging: Tube Package / Case: TO-206AC, TO-52-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: TO-206AC (TO-52) Power - Max: 500 mW Resistance - RDS(On): 7 Ohms Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 3 nA Current - Drain (Idss) @ Vds (Vgs=0): 200 mA @ 10 V |
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| U291-E3 | Vishay Siliconix |
Description: JFET N-CH 30V TO206AC Packaging: Tube Package / Case: TO-206AC, TO-52-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: TO-206AC (TO-52) Power - Max: 500 mW Resistance - RDS(On): 7 Ohms Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 3 nA Current - Drain (Idss) @ Vds (Vgs=0): 200 mA @ 10 V |
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| U310-E3 | Vishay Siliconix |
Description: JFET N-CH 25V TO206AC Packaging: Tube Package / Case: TO-206AC, TO-52-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: TO-206AC (TO-52) Part Status: Obsolete Power - Max: 500 mW Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 24 mA @ 10 V |
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| U430 | Vishay Siliconix |
Description: JFET 2N-CH 25V TO78-6 Packaging: Tube Package / Case: TO-78-6 Metal Can Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: 2 N-Channel (Dual) Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: TO-78-6 Part Status: Obsolete Power - Max: 500 mW Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V |
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| U430-E3 | Vishay Siliconix |
Description: JFET 2N-CH 25V TO78-6 Packaging: Tube Package / Case: TO-78-6 Metal Can Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: 2 N-Channel (Dual) Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: TO-78-6 Part Status: Obsolete Power - Max: 500 mW Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V |
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| U431 | Vishay Siliconix |
Description: JFET DUAL P-CH 25V TO-78 |
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| U440 | Vishay Siliconix |
Description: JFET 2N-CH 25V Packaging: Tube Package / Case: TO-71-6 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: 2 N-Channel (Dual) Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V Voltage - Breakdown (V(BR)GSS): 25 V Part Status: Obsolete Power - Max: 500 mW Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V |
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| U440-E3 | Vishay Siliconix |
Description: JFET 2N-CH 25V Packaging: Tube Package / Case: TO-71-6 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: 2 N-Channel (Dual) Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V Voltage - Breakdown (V(BR)GSS): 25 V Part Status: Obsolete Power - Max: 500 mW Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V |
товар відсутній |
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| U441 | Vishay Siliconix |
Description: JFET 2N-CH 25V Packaging: Tube Package / Case: TO-71-6 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: 2 N-Channel (Dual) Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V Voltage - Breakdown (V(BR)GSS): 25 V Part Status: Obsolete Power - Max: 500 mW Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V |
товар відсутній |
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| U441-E3 | Vishay Siliconix |
Description: JFET 2N-CH 25V Packaging: Tube Package / Case: TO-71-6 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: 2 N-Channel (Dual) Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V Voltage - Breakdown (V(BR)GSS): 25 V Part Status: Obsolete Power - Max: 500 mW Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V |
товар відсутній |
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| VP0300B-E3 | Vishay Siliconix | Description: MOSFET P-CH 30V 0.32A TO-205 |
товар відсутній |
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| VP0808B | Vishay Siliconix |
Description: MOSFET P-CH 80V 0.88A TO-205 |
товар відсутній |
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| VP0808B-2 | Vishay Siliconix |
Description: MOSFET P-CH 80V 0.88A TO-205 |
товар відсутній |
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 |
VP0808B-E3 | Vishay Siliconix |
Description: MOSFET P-CH 80V 880MA TO39 |
товар відсутній |
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| VP1008B | Vishay Siliconix |
Description: MOSFET P-CH 100V .79A TO-205 |
товар відсутній |
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| VQ1001P | Vishay Siliconix |
Description: MOSFET 4N-CH 30V 0.83A 14DIP |
товар відсутній |
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| VQ1001P-2 | Vishay Siliconix |
Description: MOSFET 4N-CH 30V 0.83A 14DIP |
товар відсутній |
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| VQ1001P-E3 | Vishay Siliconix |
Description: MOSFET 4N-CH 30V 0.83A 14DIP |
товар відсутній |
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| VQ1004P | Vishay Siliconix | Description: MOSFET N-CH 60V 0.4A TO-205 |
товар відсутній |
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| VQ1004P-2 | Vishay Siliconix | Description: MOSFET N-CH 60V 0.4A TO-205 |
товар відсутній |
| SQJ940EP-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 40V 15A PPAK SO-8
Description: MOSFET 2N-CH 40V 15A PPAK SO-8
товар відсутній
| SQM100N04-3M5-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 100A TO-263
Description: MOSFET N-CH 40V 100A TO-263
товар відсутній
| SQM120N03-1m5L_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15605 pF @ 15 V
Description: MOSFET N-CH 30V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15605 pF @ 15 V
товар відсутній
| SQM120N04-1m9_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8790 pF @ 25 V
Description: MOSFET N-CH 40V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8790 pF @ 25 V
товар відсутній
| SQM120N06-3m5L_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 29A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14700 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 29A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14700 pF @ 25 V
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 162.59 грн |
| SQM200N04-1m1L_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 200A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 413 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20655 pF @ 25 V
Description: MOSFET N-CH 40V 200A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 413 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20655 pF @ 25 V
товар відсутній
| SQM200N04-1m7L_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 200A TO-263
Description: MOSFET N-CH 40V 200A TO-263
товар відсутній
| SQM50N04-4m1_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 30A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6715 pF @ 25 V
Description: MOSFET N-CH 40V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 30A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6715 pF @ 25 V
товар відсутній
| SQS420EN-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 8A PPAK1212-8
Description: MOSFET N-CH 20V 8A PPAK1212-8
товар відсутній
| SQS462EN-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 8A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.3A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 8A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.3A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
| SQS482EN-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 16A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.4A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 25 V
Description: MOSFET N-CH 30V 16A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.4A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 23.67 грн |
| SQS484EN-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 16A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16.4A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1855 pF @ 25 V
Description: MOSFET N-CH 40V 16A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16.4A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1855 pF @ 25 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 30.35 грн |
| SST174-E3 |
|
Виробник: Vishay Siliconix
Description: JFET P-CH 30V TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 0V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-236
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 85 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
Description: JFET P-CH 30V TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 0V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-236
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 85 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
товар відсутній
| SST174-T1-E3 |
|
Виробник: Vishay Siliconix
Description: JFET P-CH 30V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 0V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 85 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
Description: JFET P-CH 30V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 0V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 85 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
товар відсутній
| SST201-T1-E3 |
|
Виробник: Vishay Siliconix
Description: JFET N-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23
Part Status: Obsolete
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 15 V
Description: JFET N-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23
Part Status: Obsolete
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 15 V
товар відсутній
| SST4118-T1-E3 |
|
Виробник: Vishay Siliconix
Description: JFET N-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 80 µA @ 10 V
Description: JFET N-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 80 µA @ 10 V
товар відсутній
| SST4416-E3 |
|
Виробник: Vishay Siliconix
Description: JFET N-CH 30V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2.2pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23
Part Status: Obsolete
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Description: JFET N-CH 30V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2.2pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23
Part Status: Obsolete
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
товар відсутній
| SST5461-T1-E3 |
|
Виробник: Vishay Siliconix
Description: JFET P-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Description: JFET P-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
товар відсутній
| SST5462-T1-E3 |
|
Виробник: Vishay Siliconix
Description: JFET P-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 1.8 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
Description: JFET P-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 1.8 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
товар відсутній
| SST5484-E3 | |
|
Виробник: Vishay Siliconix
Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Part Status: Obsolete
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Part Status: Obsolete
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
товар відсутній
| SST5484-T1-E3 |
|
Виробник: Vishay Siliconix
Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Part Status: Obsolete
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Part Status: Obsolete
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
товар відсутній
| SST5485-E3 |
|
Виробник: Vishay Siliconix
Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
товар відсутній
| SST5485-T1-E3 |
|
Виробник: Vishay Siliconix
Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
товар відсутній
| SST5486-E3 |
|
Виробник: Vishay Siliconix
Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
товар відсутній
| SST5486-T1-E3 |
|
Виробник: Vishay Siliconix
Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
товар відсутній
| SUD06N10-225L-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 6.5A TO252AA
Description: MOSFET N-CH 100V 6.5A TO252AA
товар відсутній
| SUD50N03-06AP-T4E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Power Dissipation (Max): 10W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
Description: MOSFET N-CH 30V 90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Power Dissipation (Max): 10W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
товар відсутній
| SUP53P06-20-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 9.2A/53A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 104.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Description: MOSFET P-CH 60V 9.2A/53A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 104.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
товар відсутній
| U291 |
|
Виробник: Vishay Siliconix
Description: JFET N-CH 30V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-206AC (TO-52)
Power - Max: 500 mW
Resistance - RDS(On): 7 Ohms
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 3 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 mA @ 10 V
Description: JFET N-CH 30V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-206AC (TO-52)
Power - Max: 500 mW
Resistance - RDS(On): 7 Ohms
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 3 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 mA @ 10 V
товар відсутній
| U291-E3 |
|
Виробник: Vishay Siliconix
Description: JFET N-CH 30V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-206AC (TO-52)
Power - Max: 500 mW
Resistance - RDS(On): 7 Ohms
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 3 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 mA @ 10 V
Description: JFET N-CH 30V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-206AC (TO-52)
Power - Max: 500 mW
Resistance - RDS(On): 7 Ohms
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 3 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 mA @ 10 V
товар відсутній
| U310-E3 |
|
Виробник: Vishay Siliconix
Description: JFET N-CH 25V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-206AC (TO-52)
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 24 mA @ 10 V
Description: JFET N-CH 25V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-206AC (TO-52)
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 24 mA @ 10 V
товар відсутній
| U430 |
|
Виробник: Vishay Siliconix
Description: JFET 2N-CH 25V TO78-6
Packaging: Tube
Package / Case: TO-78-6 Metal Can
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-78-6
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
Description: JFET 2N-CH 25V TO78-6
Packaging: Tube
Package / Case: TO-78-6 Metal Can
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-78-6
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
товар відсутній
| U430-E3 |
|
Виробник: Vishay Siliconix
Description: JFET 2N-CH 25V TO78-6
Packaging: Tube
Package / Case: TO-78-6 Metal Can
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-78-6
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
Description: JFET 2N-CH 25V TO78-6
Packaging: Tube
Package / Case: TO-78-6 Metal Can
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-78-6
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
товар відсутній
| U440 |
|
Виробник: Vishay Siliconix
Description: JFET 2N-CH 25V
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
Description: JFET 2N-CH 25V
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
товар відсутній
| U440-E3 |
|
Виробник: Vishay Siliconix
Description: JFET 2N-CH 25V
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
Description: JFET 2N-CH 25V
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
товар відсутній
| U441 |
|
Виробник: Vishay Siliconix
Description: JFET 2N-CH 25V
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
Description: JFET 2N-CH 25V
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
товар відсутній
| U441-E3 |
|
Виробник: Vishay Siliconix
Description: JFET 2N-CH 25V
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
Description: JFET 2N-CH 25V
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
товар відсутній