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SQS460EN-T1-GE3 SQS460EN-T1-GE3 Vishay Siliconix sqs460en.pdf Description: MOSFET N-CH 60V 8A 1212-8
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SQS462EN-T1_GE3 SQS462EN-T1_GE3 Vishay Siliconix sqs462en.pdf Description: MOSFET N-CH 60V 8A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.3A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+32.13 грн
6000+28.87 грн
Мінімальне замовлення: 3000
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SQS482EN-T1_GE3 SQS482EN-T1_GE3 Vishay Siliconix sqs482en.pdf Description: MOSFET N-CH 30V 16A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.4A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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SQS484EN-T1_GE3 SQS484EN-T1_GE3 Vishay Siliconix sqs484en.pdf Description: MOSFET N-CH 40V 16A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16.4A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1855 pF @ 25 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+34.86 грн
Мінімальне замовлення: 3000
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SST174-E3 SST174-E3 Vishay Siliconix J;SST174,175,176,177%20Series.pdf Description: JFET P-CH 30V TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 0V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-236
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 85 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
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SST174-T1-E3 SST174-T1-E3 Vishay Siliconix J;SST174,175,176,177%20Series.pdf Description: JFET P-CH 30V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 0V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 85 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
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SST201-T1-E3 SST201-T1-E3 Vishay Siliconix J%3BSST201%20Series.pdf Description: JFET N-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23
Part Status: Obsolete
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 15 V
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SST204-E3 SST204-E3 Vishay Siliconix J;SST201%20Series.pdf Description: JFET N-CH 25V .7MA SOT-23
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SST204-T1-E3 SST204-T1-E3 Vishay Siliconix J;SST201 Series.pdf Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 15 V
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SST4118-T1-E3 SST4118-T1-E3 Vishay Siliconix 2N,PN,SST4117A Series.pdf Description: JFET N-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 80 µA @ 10 V
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SST4119-T1-E3 SST4119-T1-E3 Vishay Siliconix 2N,PN,SST4117A Series.pdf Description: JFET N-CH 40V TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-236
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 10 V
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SST4416-E3 SST4416-E3 Vishay Siliconix 2N4416%2C2N4416A.SST4416.pdf Description: JFET N-CH 30V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2.2pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23
Part Status: Obsolete
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
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SST5461-T1-E3 SST5461-T1-E3 Vishay Siliconix 2N;SST5460 Series.pdf Description: JFET P-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
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SST5462-T1-E3 SST5462-T1-E3 Vishay Siliconix 2N;SST5460 Series.pdf Description: JFET P-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 1.8 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
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SST5484-E3 SST5484-E3 Vishay Siliconix 2N;SST5484 Series.pdf description Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Part Status: Obsolete
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
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SST5484-T1-E3 SST5484-T1-E3 Vishay Siliconix 2N;SST5484 Series.pdf Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Part Status: Obsolete
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
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SST5485-E3 SST5485-E3 Vishay Siliconix 2N;SST5484 Series.pdf Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
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SST5485-T1-E3 SST5485-T1-E3 Vishay Siliconix 2N;SST5484 Series.pdf Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
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SST5486-E3 SST5486-E3 Vishay Siliconix 2N;SST5484 Series.pdf Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
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SST5486-T1-E3 SST5486-T1-E3 Vishay Siliconix 2N;SST5484 Series.pdf Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
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SUD06N10-225L-GE3 SUD06N10-225L-GE3 Vishay Siliconix to252aa.pdf Description: MOSFET N-CH 100V 6.5A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta), 16.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
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SUD50N025-09BP-E3 Vishay Siliconix 73477.pdf Description: MOSFET N-CH D-S 25V TO252
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SUD50N03-06AP-T4E3 SUD50N03-06AP-T4E3 Vishay Siliconix 73540.pdf Description: MOSFET N-CH 30V 90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Power Dissipation (Max): 10W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
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SUP53P06-20-GE3 SUP53P06-20-GE3 Vishay Siliconix sup53p06-20.pdf Description: MOSFET P-CH 60V 9.2A/53A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 104.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
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SYB85N10-10 Vishay Siliconix Description: MOSFET N-CH D-S 100V TO263
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U290 Vishay Siliconix U290,U291.pdf Description: JFET N-CH 30V 0.5W TO-206AC
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U290-E3 Vishay Siliconix U290,U291.pdf Description: JFET N-CH 30V 0.5W TO-206AC
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U291 Vishay Siliconix U290%2CU291.pdf Description: JFET N-CH 30V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-206AC (TO-52)
Power - Max: 500 mW
Resistance - RDS(On): 7 Ohms
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 3 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 mA @ 10 V
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U291-E3 Vishay Siliconix U290%2CU291.pdf Description: JFET N-CH 30V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-206AC (TO-52)
Power - Max: 500 mW
Resistance - RDS(On): 7 Ohms
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 3 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 mA @ 10 V
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U310-E3 Vishay Siliconix J%3BSST%3BU308%20Series.pdf Description: JFET N-CH 25V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-206AC (TO-52)
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 24 mA @ 10 V
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U430 Vishay Siliconix U430,U431.pdf Description: JFET 2N-CH 25V TO78-6
Packaging: Tube
Package / Case: TO-78-6 Metal Can
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-78-6
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
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U430-E3 Vishay Siliconix U430,U431.pdf Description: JFET 2N-CH 25V TO78-6
Packaging: Tube
Package / Case: TO-78-6 Metal Can
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-78-6
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
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U431 Vishay Siliconix U430%2CU431.pdf Description: JFET 2N-CH 25V TO78-6
Packaging: Tube
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-78-6
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 24 mA @ 10 V
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U440 Vishay Siliconix U440.U441.pdf Description: JFET 2N-CH 25V
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
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U440-E3 Vishay Siliconix U440.U441.pdf Description: JFET 2N-CH 25V
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
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U441 Vishay Siliconix U440.U441.pdf Description: JFET 2N-CH 25V
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
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U441-E3 Vishay Siliconix U440.U441.pdf Description: JFET 2N-CH 25V
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
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VP0300B-E3 Vishay Siliconix Description: MOSFET P-CH 30V 0.32A TO-205
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VP0808B Vishay Siliconix VP0808B,L,M;%20VP1008B,L,M.pdf Description: MOSFET P-CH 80V 0.88A TO-205
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VP0808B-2 Vishay Siliconix VP0808B,L,M;%20VP1008B,L,M.pdf Description: MOSFET P-CH 80V 0.88A TO-205
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VP0808B-E3 VP0808B-E3 Vishay Siliconix VP0808B,L,M;%20VP1008B,L,M.pdf Description: MOSFET P-CH 80V 880MA TO39
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VP1008B Vishay Siliconix VP0808B,L,M;%20VP1008B,L,M.pdf Description: MOSFET P-CH 100V .79A TO-205
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VQ1001P Vishay Siliconix 70219.pdf Description: MOSFET 4N-CH 30V 0.83A 14DIP
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VQ1001P-2 Vishay Siliconix 70219.pdf Description: MOSFET 4N-CH 30V 0.83A 14DIP
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VQ1001P-E3 Vishay Siliconix 70219.pdf Description: MOSFET 4N-CH 30V 0.83A 14DIP
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VQ1004P Vishay Siliconix Description: MOSFET N-CH 60V 0.4A TO-205
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VQ1004P-2 Vishay Siliconix Description: MOSFET N-CH 60V 0.4A TO-205
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VQ1004P-E3 Vishay Siliconix Description: MOSFET N-CH 60V 0.4A TO-205
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VQ1006P Vishay Siliconix 70214.pdf Description: MOSFET 4N-CH 90V 0.4A 14DIP
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VQ1006P-2 Vishay Siliconix 70214.pdf Description: MOSFET 4N-CH 90V 0.4A 14DIP
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VQ1006P-E3 Vishay Siliconix 70214.pdf Description: MOSFET 4N-CH 90V 0.4A 14DIP
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VQ2001P Vishay Siliconix 70217.pdf Description: MOSFET 4P-CH 30V 0.6A 14DIP
Packaging: Tube
Configuration: 4 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 12V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
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VQ2001P-2 Vishay Siliconix 70217.pdf Description: MOSFET 4P-CH 30V 0.6A 14DIP
Packaging: Tube
Package / Case: 14-DIP
Mounting Type: Through Hole
Configuration: 4 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 12V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 14-DIP
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VQ3001P-E3 Vishay Siliconix Description: MOSFET 2N/2P-CH 30V 0.85A
Packaging: Tube
Configuration: 2 N and 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 850mA, 600mA
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V, 150pF @ 15V
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 12V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Part Status: Obsolete
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SIP32419DN-T1-GE4 SIP32419DN-T1-GE4 Vishay Siliconix sip32429.pdf Description: IC PWR SWITCH P-CHAN 1:1 10DFN
Features: Power Good, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 56mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+88.90 грн
Мінімальне замовлення: 2500
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SIP32468DB-T2-GE1 SIP32468DB-T2-GE1 Vishay Siliconix sip32467.pdf Description: IC PWR SWITCH N-CHAN 1:1 4WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WLCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
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SIP32467DB-T2-GE1 SIP32467DB-T2-GE1 Vishay Siliconix sip32467.pdf Description: IC PWR SWITCH N-CHAN 1:1 4WLCSP
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WLCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
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SIP32419DN-T1-GE4 SIP32419DN-T1-GE4 Vishay Siliconix sip32429.pdf Description: IC PWR SWITCH P-CHAN 1:1 10DFN
Features: Power Good, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 56mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Part Status: Active
на замовлення 4937 шт:
термін постачання 21-31 дні (днів)
2+170.67 грн
10+122.43 грн
25+111.85 грн
100+94.02 грн
250+88.80 грн
500+85.66 грн
1000+81.71 грн
Мінімальне замовлення: 2
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SIP32468DB-T2-GE1 SIP32468DB-T2-GE1 Vishay Siliconix sip32467.pdf Description: IC PWR SWITCH N-CHAN 1:1 4WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WLCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
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SIP32467DB-T2-GE1 SIP32467DB-T2-GE1 Vishay Siliconix sip32467.pdf Description: IC PWR SWITCH N-CHAN 1:1 4WLCSP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WLCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
6+63.69 грн
Мінімальне замовлення: 6
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SQS460EN-T1-GE3 sqs460en.pdf
SQS460EN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 8A 1212-8
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SQS462EN-T1_GE3 sqs462en.pdf
SQS462EN-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 8A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.3A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+32.13 грн
6000+28.87 грн
Мінімальне замовлення: 3000
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SQS482EN-T1_GE3 sqs482en.pdf
SQS482EN-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 16A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.4A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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SQS484EN-T1_GE3 sqs484en.pdf
SQS484EN-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 16A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16.4A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1855 pF @ 25 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+34.86 грн
Мінімальне замовлення: 3000
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SST174-E3 J;SST174,175,176,177%20Series.pdf
SST174-E3
Виробник: Vishay Siliconix
Description: JFET P-CH 30V TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 0V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-236
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 85 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
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SST174-T1-E3 J;SST174,175,176,177%20Series.pdf
SST174-T1-E3
Виробник: Vishay Siliconix
Description: JFET P-CH 30V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 0V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 85 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
товару немає в наявності
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SST201-T1-E3 J%3BSST201%20Series.pdf
SST201-T1-E3
Виробник: Vishay Siliconix
Description: JFET N-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23
Part Status: Obsolete
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 15 V
товару немає в наявності
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SST204-E3 J;SST201%20Series.pdf
SST204-E3
Виробник: Vishay Siliconix
Description: JFET N-CH 25V .7MA SOT-23
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SST204-T1-E3 J;SST201 Series.pdf
SST204-T1-E3
Виробник: Vishay Siliconix
Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 15 V
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SST4118-T1-E3 2N,PN,SST4117A Series.pdf
SST4118-T1-E3
Виробник: Vishay Siliconix
Description: JFET N-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 80 µA @ 10 V
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SST4119-T1-E3 2N,PN,SST4117A Series.pdf
SST4119-T1-E3
Виробник: Vishay Siliconix
Description: JFET N-CH 40V TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-236
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 10 V
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SST4416-E3 2N4416%2C2N4416A.SST4416.pdf
SST4416-E3
Виробник: Vishay Siliconix
Description: JFET N-CH 30V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2.2pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23
Part Status: Obsolete
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
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SST5461-T1-E3 2N;SST5460 Series.pdf
SST5461-T1-E3
Виробник: Vishay Siliconix
Description: JFET P-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
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SST5462-T1-E3 2N;SST5460 Series.pdf
SST5462-T1-E3
Виробник: Vishay Siliconix
Description: JFET P-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 1.8 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
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SST5484-E3 description 2N;SST5484 Series.pdf
SST5484-E3
Виробник: Vishay Siliconix
Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Part Status: Obsolete
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
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SST5484-T1-E3 2N;SST5484 Series.pdf
SST5484-T1-E3
Виробник: Vishay Siliconix
Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Part Status: Obsolete
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
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SST5485-E3 2N;SST5484 Series.pdf
SST5485-E3
Виробник: Vishay Siliconix
Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
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SST5485-T1-E3 2N;SST5484 Series.pdf
SST5485-T1-E3
Виробник: Vishay Siliconix
Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
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SST5486-E3 2N;SST5484 Series.pdf
SST5486-E3
Виробник: Vishay Siliconix
Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
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SST5486-T1-E3 2N;SST5484 Series.pdf
SST5486-T1-E3
Виробник: Vishay Siliconix
Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
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SUD06N10-225L-GE3 to252aa.pdf
SUD06N10-225L-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 6.5A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta), 16.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
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SUD50N025-09BP-E3 73477.pdf
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 25V TO252
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SUD50N03-06AP-T4E3 73540.pdf
SUD50N03-06AP-T4E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 90A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Power Dissipation (Max): 10W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
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SUP53P06-20-GE3 sup53p06-20.pdf
SUP53P06-20-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 9.2A/53A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 104.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
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SYB85N10-10
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 100V TO263
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U290 U290,U291.pdf
Виробник: Vishay Siliconix
Description: JFET N-CH 30V 0.5W TO-206AC
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U290-E3 U290,U291.pdf
Виробник: Vishay Siliconix
Description: JFET N-CH 30V 0.5W TO-206AC
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U291 U290%2CU291.pdf
Виробник: Vishay Siliconix
Description: JFET N-CH 30V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-206AC (TO-52)
Power - Max: 500 mW
Resistance - RDS(On): 7 Ohms
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 3 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 mA @ 10 V
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U291-E3 U290%2CU291.pdf
Виробник: Vishay Siliconix
Description: JFET N-CH 30V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-206AC (TO-52)
Power - Max: 500 mW
Resistance - RDS(On): 7 Ohms
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 3 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 mA @ 10 V
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U310-E3 J%3BSST%3BU308%20Series.pdf
Виробник: Vishay Siliconix
Description: JFET N-CH 25V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-206AC (TO-52)
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 24 mA @ 10 V
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U430 U430,U431.pdf
Виробник: Vishay Siliconix
Description: JFET 2N-CH 25V TO78-6
Packaging: Tube
Package / Case: TO-78-6 Metal Can
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-78-6
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
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U430-E3 U430,U431.pdf
Виробник: Vishay Siliconix
Description: JFET 2N-CH 25V TO78-6
Packaging: Tube
Package / Case: TO-78-6 Metal Can
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-78-6
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
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U431 U430%2CU431.pdf
Виробник: Vishay Siliconix
Description: JFET 2N-CH 25V TO78-6
Packaging: Tube
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-78-6
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 24 mA @ 10 V
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U440 U440.U441.pdf
Виробник: Vishay Siliconix
Description: JFET 2N-CH 25V
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
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U440-E3 U440.U441.pdf
Виробник: Vishay Siliconix
Description: JFET 2N-CH 25V
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
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U441 U440.U441.pdf
Виробник: Vishay Siliconix
Description: JFET 2N-CH 25V
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
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U441-E3 U440.U441.pdf
Виробник: Vishay Siliconix
Description: JFET 2N-CH 25V
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
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VP0300B-E3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 0.32A TO-205
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VP0808B VP0808B,L,M;%20VP1008B,L,M.pdf
Виробник: Vishay Siliconix
Description: MOSFET P-CH 80V 0.88A TO-205
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VP0808B-2 VP0808B,L,M;%20VP1008B,L,M.pdf
Виробник: Vishay Siliconix
Description: MOSFET P-CH 80V 0.88A TO-205
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VP0808B-E3 VP0808B,L,M;%20VP1008B,L,M.pdf
VP0808B-E3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 80V 880MA TO39
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VP1008B VP0808B,L,M;%20VP1008B,L,M.pdf
Виробник: Vishay Siliconix
Description: MOSFET P-CH 100V .79A TO-205
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VQ1001P 70219.pdf
Виробник: Vishay Siliconix
Description: MOSFET 4N-CH 30V 0.83A 14DIP
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VQ1001P-2 70219.pdf
Виробник: Vishay Siliconix
Description: MOSFET 4N-CH 30V 0.83A 14DIP
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VQ1001P-E3 70219.pdf
Виробник: Vishay Siliconix
Description: MOSFET 4N-CH 30V 0.83A 14DIP
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VQ1004P
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 0.4A TO-205
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VQ1004P-2
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 0.4A TO-205
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VQ1004P-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 0.4A TO-205
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VQ1006P 70214.pdf
Виробник: Vishay Siliconix
Description: MOSFET 4N-CH 90V 0.4A 14DIP
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VQ1006P-2 70214.pdf
Виробник: Vishay Siliconix
Description: MOSFET 4N-CH 90V 0.4A 14DIP
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VQ1006P-E3 70214.pdf
Виробник: Vishay Siliconix
Description: MOSFET 4N-CH 90V 0.4A 14DIP
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VQ2001P 70217.pdf
Виробник: Vishay Siliconix
Description: MOSFET 4P-CH 30V 0.6A 14DIP
Packaging: Tube
Configuration: 4 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 12V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
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VQ2001P-2 70217.pdf
Виробник: Vishay Siliconix
Description: MOSFET 4P-CH 30V 0.6A 14DIP
Packaging: Tube
Package / Case: 14-DIP
Mounting Type: Through Hole
Configuration: 4 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 12V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 14-DIP
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VQ3001P-E3
Виробник: Vishay Siliconix
Description: MOSFET 2N/2P-CH 30V 0.85A
Packaging: Tube
Configuration: 2 N and 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 850mA, 600mA
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V, 150pF @ 15V
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 12V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Part Status: Obsolete
товару немає в наявності
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SIP32419DN-T1-GE4 sip32429.pdf
SIP32419DN-T1-GE4
Виробник: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 10DFN
Features: Power Good, Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 56mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+88.90 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SIP32468DB-T2-GE1 sip32467.pdf
SIP32468DB-T2-GE1
Виробник: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WLCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
SIP32467DB-T2-GE1 sip32467.pdf
SIP32467DB-T2-GE1
Виробник: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4WLCSP
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WLCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
SIP32419DN-T1-GE4 sip32429.pdf
SIP32419DN-T1-GE4
Виробник: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 10DFN
Features: Power Good, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 56mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Part Status: Active
на замовлення 4937 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+170.67 грн
10+122.43 грн
25+111.85 грн
100+94.02 грн
250+88.80 грн
500+85.66 грн
1000+81.71 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SIP32468DB-T2-GE1 sip32467.pdf
SIP32468DB-T2-GE1
Виробник: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WLCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
SIP32467DB-T2-GE1 sip32467.pdf
SIP32467DB-T2-GE1
Виробник: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4WLCSP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WLCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+63.69 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
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