Продукція > VISHAY SILICONIX > Всі товари виробника VISHAY SILICONIX (11817) > Сторінка 85 з 197
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SUP90N08-7M7P-E3 | Vishay Siliconix |
Description: MOSFET N-CH 75V 90A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 3.75W (Ta), 208.3W (Tc) Rds On (Max) @ Id, Vgs: 7.7mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
SUP90N08-8M2P-E3 | Vishay Siliconix |
Description: MOSFET N-CH D-S 75V TO220AB |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||
|
SUP90N10-8M8P-E3 | Vishay Siliconix |
Description: MOSFET N-CH D-S 100V TO220AB |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||
|
SUP90N15-18P-E3 | Vishay Siliconix |
Description: MOSFET N-CH 150V 90A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
SUP90P06-09L-E3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 90A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 30A, 10V Power Dissipation (Max): 2.4W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
SUV85N10-10-E3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 85A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.75W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SY3443BDV-T1-E3 | Vishay Siliconix | Description: MOSFET P-CH D-S 2.5V D2PAK |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| SY3469DV-T1-E3 | Vishay Siliconix | Description: MOSFET P-CH D-S 20V D2PAK |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| SYM110N04-03-E3 | Vishay Siliconix | Description: MOSFET N-CH D-S 40V |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||
|
TN2404K-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 240V 200MA SOT23-3Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Drain to Source Voltage (Vdss): 240 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
|
TP0101K-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH D-S 20V TO236 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
|
TP0202K-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 385MA SOT23-3Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 385mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
TP0610K-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 185MA SOT23-3Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 185mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SI4176DY-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 12A 8SO |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
|
|
SI4178DY-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 12A 8SO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
Si4228DY-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 25V 8A 8SO |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
|
|
SI4276DY-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8A 8SOPart Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Rds On (Max) @ Id, Vgs: 15.3mOhm @ 9.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V Current - Continuous Drain (Id) @ 25°C: 8A Drain to Source Voltage (Vdss): 30V Power - Max: 3.6W, 2.8W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
SI4804CDY-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8A 8SOIC Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V Current - Continuous Drain (Id) @ 25°C: 8A Drain to Source Voltage (Vdss): 30V Power - Max: 3.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
SIHG47N60S-E3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 47A TO247AC |
на замовлення 330 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
|
SIP32411DNP-T1-GE4 | Vishay Siliconix |
Description: IC PWR SWITCH N-CHAN 1:1 4TDFNFeatures: Load Discharge, Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 4-UFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 62mOhm Input Type: Non-Inverting Voltage - Load: 1.1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: 4-TDFN (1.2x1.6) Fault Protection: Reverse Current Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SIP32411DR-T1-GE3 | Vishay Siliconix |
Description: IC PWR SWITCH N-CHAN 1:1 SC70-6Features: Load Discharge, Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 101mOhm Input Type: Non-Inverting Voltage - Load: 1.1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: SC-70-6 Fault Protection: Reverse Current Part Status: Active |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SIP32431DNP3-T1GE4 | Vishay Siliconix |
Description: IC PWR SWITCH P-CHAN 1:1 4TDFNFeatures: Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 4-UFDFN Exposed Pad Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 105mOhm Input Type: Non-Inverting Voltage - Load: 1.5V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.4A Ratio - Input:Output: 1:1 Supplier Device Package: 4-TDFN (1.2x1.6) Fault Protection: Reverse Current Part Status: Active |
на замовлення 771000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SIP32431DR3-T1GE3 | Vishay Siliconix |
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6Features: Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 147mOhm Input Type: Non-Inverting Voltage - Load: 1.5V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.2A Ratio - Input:Output: 1:1 Supplier Device Package: SC-70-6 Fault Protection: Reverse Current Part Status: Active |
на замовлення 281000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
SI1315DL-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 8V 900MA SOT323Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 4 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 8 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Obsolete Supplier Device Package: SC-70-3 Vgs(th) (Max) @ Id: 800mV @ 250µA Power Dissipation (Max): 300mW (Ta), 400mW (Tc) Rds On (Max) @ Id, Vgs: 336mOhm @ 800mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 900mA (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
SI5457DC-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 6A 1206-8Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 4.9A, 4.5V Power Dissipation (Max): 5.7W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 1206-8 ChipFET™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SIP32411DNP-T1-GE4 | Vishay Siliconix |
Description: IC PWR SWITCH N-CHAN 1:1 4TDFNPackaging: Cut Tape (CT) Features: Load Discharge, Slew Rate Controlled Package / Case: 4-UFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 62mOhm Input Type: Non-Inverting Voltage - Load: 1.1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: 4-TDFN (1.2x1.6) Fault Protection: Reverse Current Part Status: Active |
на замовлення 4407 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SIP32411DR-T1-GE3 | Vishay Siliconix |
Description: IC PWR SWITCH N-CHAN 1:1 SC70-6Packaging: Cut Tape (CT) Features: Load Discharge, Slew Rate Controlled Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 101mOhm Input Type: Non-Inverting Voltage - Load: 1.1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: SC-70-6 Fault Protection: Reverse Current Part Status: Active |
на замовлення 22921 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SIP32431DR3-T1GE3 | Vishay Siliconix |
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6Packaging: Cut Tape (CT) Features: Slew Rate Controlled Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 147mOhm Input Type: Non-Inverting Voltage - Load: 1.5V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.2A Ratio - Input:Output: 1:1 Supplier Device Package: SC-70-6 Fault Protection: Reverse Current Part Status: Active |
на замовлення 281420 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SIP32431DNP3-T1GE4 | Vishay Siliconix |
Description: IC PWR SWITCH P-CHAN 1:1 4TDFNPackaging: Cut Tape (CT) Features: Slew Rate Controlled Package / Case: 4-UFDFN Exposed Pad Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 105mOhm Input Type: Non-Inverting Voltage - Load: 1.5V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.4A Ratio - Input:Output: 1:1 Supplier Device Package: 4-TDFN (1.2x1.6) Fault Protection: Reverse Current Part Status: Active |
на замовлення 772220 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SQD50N04-09H-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 50A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
SQJ412EP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 32A PPAK SO-8 |
на замовлення 1253 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
|
|
SQJ412EP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 32A PPAK SO-8 |
на замовлення 1253 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
|
DG721DQ-T1-GE3 | Vishay Siliconix |
Description: IC SWITCH SPST-NOX2 4.5OHM 8MSOPNumber of Circuits: 2 Part Status: Active Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 8pF, 9pF Switch Time (Ton, Toff) (Max): 30ns, 35ns Channel-to-Channel Matching (ΔRon): 200mOhm Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO Crosstalk: -90dB @ 10MHz Charge Injection: 2.2pC Voltage - Supply, Single (V+): 1.8V ~ 5.5V Supplier Device Package: 8-MSOP -3db Bandwidth: 366MHz On-State Resistance (Max): 4.5Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
DG723DQ-T1-GE3 | Vishay Siliconix |
Description: IC SW SPST-NO/NCX2 4.5OHM 8MSOP Voltage - Supply, Single (V+): 1.8V ~ 5.5V Supplier Device Package: 8-MSOP -3db Bandwidth: 366MHz On-State Resistance (Max): 4.5Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Cut Tape (CT) Number of Circuits: 2 Part Status: Obsolete Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 8pF, 9pF Switch Time (Ton, Toff) (Max): 30ns, 35ns Channel-to-Channel Matching (ΔRon): 200mOhm Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO/NC Crosstalk: -90dB @ 10MHz Charge Injection: 2.2pC |
на замовлення 38 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
DG9236DN-T1-E4 | Vishay Siliconix |
Description: IC SW SPDTX2 145OHM 10MINIQFN Number of Circuits: 2 Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 2pF Switch Time (Ton, Toff) (Max): 70ns, 55ns Channel-to-Channel Matching (ΔRon): 2Ohm Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -70dB @ 10MHz Charge Injection: 6pC Voltage - Supply, Single (V+): 2.7V ~ 16V Supplier Device Package: 10-miniQFN (1.4x1.8) -3db Bandwidth: 800MHz On-State Resistance (Max): 145Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 10-UFQFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
DG9253EN-T1-E4 | Vishay Siliconix |
Description: IC MULTIPLEXER TRPL 2-CH 16QFNVoltage - Supply, Single (V+): 2.7V ~ 16V Number of Circuits: 3 Part Status: Obsolete Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 2pF, 4.6pF Switch Time (Ton, Toff) (Max): 250ns, 125ns Channel-to-Channel Matching (ΔRon): 3.1Ohm Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -67dB @ 10MHz Charge Injection: 4.1pC Voltage - Supply, Dual (V±): ±2.7V ~ 5V Supplier Device Package: 16-miniQFN (1.8x2.6) -3db Bandwidth: 480MHz On-State Resistance (Max): 182Ohm Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 16-WFQFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
DG721DQ-T1-GE3 | Vishay Siliconix |
Description: IC SWITCH SPST-NOX2 4.5OHM 8MSOPNumber of Circuits: 2 Part Status: Active Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 8pF, 9pF Switch Time (Ton, Toff) (Max): 30ns, 35ns Channel-to-Channel Matching (ΔRon): 200mOhm Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO Crosstalk: -90dB @ 10MHz Charge Injection: 2.2pC Voltage - Supply, Single (V+): 1.8V ~ 5.5V Supplier Device Package: 8-MSOP -3db Bandwidth: 366MHz On-State Resistance (Max): 4.5Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
DG723DQ-T1-GE3 | Vishay Siliconix |
Description: IC SW SPST-NO/NCX2 4.5OHM 8MSOP Number of Circuits: 2 Part Status: Obsolete Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 8pF, 9pF Switch Time (Ton, Toff) (Max): 30ns, 35ns Channel-to-Channel Matching (ΔRon): 200mOhm Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO/NC Crosstalk: -90dB @ 10MHz Charge Injection: 2.2pC Voltage - Supply, Single (V+): 1.8V ~ 5.5V Supplier Device Package: 8-MSOP -3db Bandwidth: 366MHz On-State Resistance (Max): 4.5Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
DG9236DN-T1-E4 | Vishay Siliconix |
Description: IC SW SPDTX2 145OHM 10MINIQFN Number of Circuits: 2 Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 2pF Switch Time (Ton, Toff) (Max): 70ns, 55ns Channel-to-Channel Matching (ΔRon): 2Ohm Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -70dB @ 10MHz Charge Injection: 6pC Voltage - Supply, Single (V+): 2.7V ~ 16V Supplier Device Package: 10-miniQFN (1.4x1.8) -3db Bandwidth: 800MHz On-State Resistance (Max): 145Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 10-UFQFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
|
|
DG9252EN-T1-E4 | Vishay Siliconix |
Description: IC MULTIPLEXER DUAL 4CH 16QFNVoltage - Supply, Dual (V±): ±2.7V ~ 5V Voltage - Supply, Single (V+): 2.7V ~ 16V Supplier Device Package: 16-miniQFN (1.8x2.6) -3db Bandwidth: 449MHz On-State Resistance (Max): 182Ohm Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 16-WFQFN Packaging: Tape & Reel (TR) Number of Circuits: 2 Part Status: Obsolete Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 2.2pF, 6.6pF Switch Time (Ton, Toff) (Max): 250ns, 125ns Channel-to-Channel Matching (ΔRon): 3.1Ohm Multiplexer/Demultiplexer Circuit: 4:1 Switch Circuit: SP4T Crosstalk: -67dB @ 10MHz Charge Injection: 4.1pC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
DG9253EN-T1-E4 | Vishay Siliconix |
Description: IC MULTIPLEXER TRPL 2-CH 16QFNSwitch Time (Ton, Toff) (Max): 250ns, 125ns Channel-to-Channel Matching (ΔRon): 3.1Ohm Package / Case: 16-WFQFN Packaging: Tape & Reel (TR) Number of Circuits: 3 Part Status: Obsolete Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 2pF, 4.6pF Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -67dB @ 10MHz Charge Injection: 4.1pC Voltage - Supply, Dual (V±): ±2.7V ~ 5V Voltage - Supply, Single (V+): 2.7V ~ 16V Supplier Device Package: 16-miniQFN (1.8x2.6) -3db Bandwidth: 480MHz On-State Resistance (Max): 182Ohm Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
SIP32413DNP-T1-GE4 | Vishay Siliconix |
Description: IC PWR SWITCH N-CHAN 1:1 8TDFNPackaging: Tape & Reel (TR) Features: Slew Rate Controlled Package / Case: 8-UFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 62mOhm Input Type: Non-Inverting Voltage - Load: 1.1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.4A Ratio - Input:Output: 1:1 Supplier Device Package: 8-TDFN (2x2) Fault Protection: Reverse Current Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
DG2537DQ-T1-GE3 | Vishay Siliconix |
Description: IC SWITCH SPST 4.5 OHM 10MSOP |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
|
DG2538DQ-T1-GE3 | Vishay Siliconix |
Description: IC SWITCH SPST 4.5 OHM 10MSOP |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
|
DG2539DQ-T1-GE3 | Vishay Siliconix |
Description: IC SWITCH SPST 4.5 OHM 10MSOP |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
|
DG2599DN-T1-GE4 | Vishay Siliconix |
Description: IC SW DPDTX2 1.1OHM 16MINIQFNMounting Type: Surface Mount Package / Case: 16-WFQFN Packaging: Tape & Reel (TR) Number of Circuits: 2 Current - Leakage (IS(off)) (Max): 10nA Channel Capacitance (CS(off), CD(off)): 9pF Switch Time (Ton, Toff) (Max): 90ns, 70ns Multiplexer/Demultiplexer Circuit: 2:2 Switch Circuit: DPDT Crosstalk: -110dB @ 1MHz Charge Injection: 10pC Voltage - Supply, Single (V+): 1.65V ~ 5V Supplier Device Package: 16-miniQFN (1.8x2.6) -3db Bandwidth: 186MHz On-State Resistance (Max): 1.1Ohm |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||||
|
DG2735ADN-T1-GE4 | Vishay Siliconix |
Description: IC SW SPDTX2 500MOHM 10MINIQFNPackaging: Tape & Reel (TR) Package / Case: 10-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 500mOhm -3db Bandwidth: 50MHz Supplier Device Package: 10-miniQFN (1.4x1.8) Voltage - Supply, Single (V+): 1.65V ~ 4.3V Crosstalk: -70dB @ 100kHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 60mOhm Switch Time (Ton, Toff) (Max): 78ns, 58ns Channel Capacitance (CS(off), CD(off)): 55pF Current - Leakage (IS(off)) (Max): 2nA Part Status: Active Number of Circuits: 2 |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
DG722DQ-T1-GE3 | Vishay Siliconix |
Description: IC SWITCH SPST-NCX2 4.5OHM 8MSOPNumber of Circuits: 2 Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 8pF, 9pF Switch Time (Ton, Toff) (Max): 30ns, 35ns Channel-to-Channel Matching (ΔRon): 200mOhm Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NC Crosstalk: -90dB @ 10MHz Charge Injection: 2.2pC Voltage - Supply, Single (V+): 1.8V ~ 5.5V Supplier Device Package: 8-MSOP -3db Bandwidth: 366MHz On-State Resistance (Max): 4.5Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
DG9251EN-T1-E4 | Vishay Siliconix |
Description: IC MUX 8:1 182OHM 16MINIQFNNumber of Circuits: 1 Part Status: Obsolete Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 2.7pF, 10.7pF Switch Time (Ton, Toff) (Max): 250ns, 125ns Channel-to-Channel Matching (ΔRon): 3.1Ohm Multiplexer/Demultiplexer Circuit: 8:1 Crosstalk: -67dB @ 10MHz Charge Injection: 4.1pC Voltage - Supply, Dual (V±): ±2.7V ~ 5V Voltage - Supply, Single (V+): 2.7V ~ 16V Supplier Device Package: 16-miniQFN (1.8x2.6) -3db Bandwidth: 314MHz On-State Resistance (Max): 182Ohm Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 16-WFQFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
DG9454EN-T1-E4 | Vishay Siliconix |
Description: IC MUX SPDT TRIPLE 16QFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
SIC414CD-T1-GE3 | Vishay Siliconix |
Description: IC REG DL BUCK/LNR SYNC 28MLPQ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
SIC779CD-T1-GE3 | Vishay Siliconix |
Description: IC HALF BRIDGE DRIVER 40A PPAK Part Status: Active Load Type: Inductive Fault Protection: Over Temperature, Shoot-Through, UVLO Supplier Device Package: PowerPAK® MLP66-40 Voltage - Load: 3V ~ 16V Technology: DrMOS Current - Output / Channel: 40A Applications: Synchronous Buck Converters Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: PowerPAK® MLP66-40 Features: Bootstrap Circuit, Diode Emulation, Status Flag Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SIP32414DNP-T1-GE4 | Vishay Siliconix |
Description: IC PWR SWITCH N-CHAN 1:1 8TDFNPackaging: Tape & Reel (TR) Features: Load Discharge, Slew Rate Controlled Package / Case: 8-UFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 62mOhm Input Type: Non-Inverting Voltage - Load: 1.1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.4A Ratio - Input:Output: 1:1 Supplier Device Package: 8-TDFN (2x2) Fault Protection: Reverse Current Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SIHG47N60E-E3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 47A TO247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 24A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 100 V |
на замовлення 509 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SIHF22N60E-E3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 21A TO220Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
|
SIHG22N60E-E3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 21A TO247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SiHB22N60E-E3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 21A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
|
SiHG30N60E-E3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 29A TO247ACInput Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
SiHF30N60E-E3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 29A TO220 |
на замовлення 496 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
|
SIHG24N65E-E3 | Vishay Siliconix |
Description: MOSFET N-CH 650V 24A TO247ACInput Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. |
| SUP90N08-7M7P-E3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 75V 90A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 208.3W (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 75V 90A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 208.3W (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| SUP90N08-8M2P-E3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 75V TO220AB
Description: MOSFET N-CH D-S 75V TO220AB
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| SUP90N10-8M8P-E3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 100V TO220AB
Description: MOSFET N-CH D-S 100V TO220AB
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| SUP90N15-18P-E3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 150V 90A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 150V 90A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| SUP90P06-09L-E3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.4W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
Description: MOSFET P-CH 60V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.4W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| SUV85N10-10-E3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 85A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 100V 85A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| SY3443BDV-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET P-CH D-S 2.5V D2PAK
Description: MOSFET P-CH D-S 2.5V D2PAK
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SY3469DV-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET P-CH D-S 20V D2PAK
Description: MOSFET P-CH D-S 20V D2PAK
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SYM110N04-03-E3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 40V
Description: MOSFET N-CH D-S 40V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| TN2404K-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 240V 200MA SOT23-3
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Description: MOSFET N-CH 240V 200MA SOT23-3
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TP0101K-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET P-CH D-S 20V TO236
Description: MOSFET P-CH D-S 20V TO236
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TP0202K-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 385MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 385mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 385MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 385mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| TP0610K-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 185MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 185mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 60V 185MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 185mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 11.19 грн |
| 6000+ | 9.86 грн |
| 9000+ | 9.39 грн |
| SI4176DY-T1-E3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 12A 8SO
Description: MOSFET N-CH 30V 12A 8SO
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| SI4178DY-T1-E3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 12A 8SO
Description: MOSFET N-CH 30V 12A 8SO
товару немає в наявності
В кошику
од. на суму грн.
| Si4228DY-T1-E3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 25V 8A 8SO
Description: MOSFET 2N-CH 25V 8A 8SO
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| SI4276DY-T1-E3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SO
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 9.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.6W, 2.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 8A 8SO
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 9.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.6W, 2.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SI4804CDY-T1-E3 |
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 8A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SIHG47N60S-E3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 47A TO247AC
Description: MOSFET N-CH 600V 47A TO247AC
на замовлення 330 шт:
термін постачання 21-31 дні (днів)
| SIP32411DNP-T1-GE4 |
![]() |
Виробник: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 13.26 грн |
| SIP32411DR-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 SC70-6
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 101mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 SC70-6
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 101mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 23.38 грн |
| SIP32431DNP3-T1GE4 |
![]() |
Виробник: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 105mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 105mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
на замовлення 771000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 19.77 грн |
| 6000+ | 18.55 грн |
| 9000+ | 18.31 грн |
| 15000+ | 16.93 грн |
| 21000+ | 16.78 грн |
| 30000+ | 16.64 грн |
| SIP32431DR3-T1GE3 |
![]() |
Виробник: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 147mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 147mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
на замовлення 281000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 17.13 грн |
| 6000+ | 16.06 грн |
| 9000+ | 15.84 грн |
| 15000+ | 14.64 грн |
| 21000+ | 14.51 грн |
| 30000+ | 14.38 грн |
| SI1315DL-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET P-CH 8V 900MA SOT323
Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: SC-70-3
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 300mW (Ta), 400mW (Tc)
Rds On (Max) @ Id, Vgs: 336mOhm @ 800mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 8V 900MA SOT323
Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: SC-70-3
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 300mW (Ta), 400mW (Tc)
Rds On (Max) @ Id, Vgs: 336mOhm @ 800mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SI5457DC-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 6A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.9A, 4.5V
Power Dissipation (Max): 5.7W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Description: MOSFET P-CH 20V 6A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.9A, 4.5V
Power Dissipation (Max): 5.7W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 13.42 грн |
| 6000+ | 11.87 грн |
| 9000+ | 11.74 грн |
| SIP32411DNP-T1-GE4 |
![]() |
Виробник: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
на замовлення 4407 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 30.64 грн |
| 15+ | 20.58 грн |
| 25+ | 18.34 грн |
| 100+ | 14.94 грн |
| 250+ | 13.85 грн |
| 500+ | 13.19 грн |
| 1000+ | 12.45 грн |
| SIP32411DR-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 SC70-6
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 101mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 SC70-6
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 101mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
на замовлення 22921 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 51.06 грн |
| 10+ | 35.33 грн |
| 25+ | 31.71 грн |
| 100+ | 26.06 грн |
| 250+ | 24.30 грн |
| 500+ | 23.24 грн |
| 1000+ | 22.00 грн |
| SIP32431DR3-T1GE3 |
![]() |
Виробник: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 147mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 147mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
на замовлення 281420 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 38.49 грн |
| 12+ | 26.17 грн |
| 25+ | 23.42 грн |
| 100+ | 19.16 грн |
| 250+ | 17.80 грн |
| 500+ | 16.98 грн |
| 1000+ | 16.04 грн |
| SIP32431DNP3-T1GE4 |
![]() |
Виробник: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 105mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 105mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
на замовлення 772220 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 43.99 грн |
| 11+ | 29.96 грн |
| 25+ | 26.87 грн |
| 100+ | 22.01 грн |
| 250+ | 20.48 грн |
| 500+ | 19.56 грн |
| 1000+ | 18.50 грн |
| SQD50N04-09H-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 25 V
Description: MOSFET N-CH 40V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| SQJ412EP-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 32A PPAK SO-8
Description: MOSFET N-CH 40V 32A PPAK SO-8
на замовлення 1253 шт:
термін постачання 21-31 дні (днів)
| SQJ412EP-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 32A PPAK SO-8
Description: MOSFET N-CH 40V 32A PPAK SO-8
на замовлення 1253 шт:
термін постачання 21-31 дні (днів)
| DG721DQ-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NOX2 4.5OHM 8MSOP
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
-3db Bandwidth: 366MHz
On-State Resistance (Max): 4.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Description: IC SWITCH SPST-NOX2 4.5OHM 8MSOP
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
-3db Bandwidth: 366MHz
On-State Resistance (Max): 4.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| DG723DQ-T1-GE3 |
Виробник: Vishay Siliconix
Description: IC SW SPST-NO/NCX2 4.5OHM 8MSOP
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
-3db Bandwidth: 366MHz
On-State Resistance (Max): 4.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
Description: IC SW SPST-NO/NCX2 4.5OHM 8MSOP
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
-3db Bandwidth: 366MHz
On-State Resistance (Max): 4.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 131.19 грн |
| 10+ | 106.66 грн |
| 25+ | 99.46 грн |
| DG9236DN-T1-E4 |
Виробник: Vishay Siliconix
Description: IC SW SPDTX2 145OHM 10MINIQFN
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2pF
Switch Time (Ton, Toff) (Max): 70ns, 55ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -70dB @ 10MHz
Charge Injection: 6pC
Voltage - Supply, Single (V+): 2.7V ~ 16V
Supplier Device Package: 10-miniQFN (1.4x1.8)
-3db Bandwidth: 800MHz
On-State Resistance (Max): 145Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Packaging: Cut Tape (CT)
Description: IC SW SPDTX2 145OHM 10MINIQFN
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2pF
Switch Time (Ton, Toff) (Max): 70ns, 55ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -70dB @ 10MHz
Charge Injection: 6pC
Voltage - Supply, Single (V+): 2.7V ~ 16V
Supplier Device Package: 10-miniQFN (1.4x1.8)
-3db Bandwidth: 800MHz
On-State Resistance (Max): 145Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| DG9253EN-T1-E4 |
![]() |
Виробник: Vishay Siliconix
Description: IC MULTIPLEXER TRPL 2-CH 16QFN
Voltage - Supply, Single (V+): 2.7V ~ 16V
Number of Circuits: 3
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2pF, 4.6pF
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -67dB @ 10MHz
Charge Injection: 4.1pC
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 480MHz
On-State Resistance (Max): 182Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Packaging: Cut Tape (CT)
Description: IC MULTIPLEXER TRPL 2-CH 16QFN
Voltage - Supply, Single (V+): 2.7V ~ 16V
Number of Circuits: 3
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2pF, 4.6pF
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -67dB @ 10MHz
Charge Injection: 4.1pC
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 480MHz
On-State Resistance (Max): 182Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| DG721DQ-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NOX2 4.5OHM 8MSOP
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
-3db Bandwidth: 366MHz
On-State Resistance (Max): 4.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Description: IC SWITCH SPST-NOX2 4.5OHM 8MSOP
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
-3db Bandwidth: 366MHz
On-State Resistance (Max): 4.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| DG723DQ-T1-GE3 |
Виробник: Vishay Siliconix
Description: IC SW SPST-NO/NCX2 4.5OHM 8MSOP
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
-3db Bandwidth: 366MHz
On-State Resistance (Max): 4.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Description: IC SW SPST-NO/NCX2 4.5OHM 8MSOP
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
-3db Bandwidth: 366MHz
On-State Resistance (Max): 4.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| DG9236DN-T1-E4 |
Виробник: Vishay Siliconix
Description: IC SW SPDTX2 145OHM 10MINIQFN
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2pF
Switch Time (Ton, Toff) (Max): 70ns, 55ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -70dB @ 10MHz
Charge Injection: 6pC
Voltage - Supply, Single (V+): 2.7V ~ 16V
Supplier Device Package: 10-miniQFN (1.4x1.8)
-3db Bandwidth: 800MHz
On-State Resistance (Max): 145Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Packaging: Tape & Reel (TR)
Description: IC SW SPDTX2 145OHM 10MINIQFN
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2pF
Switch Time (Ton, Toff) (Max): 70ns, 55ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -70dB @ 10MHz
Charge Injection: 6pC
Voltage - Supply, Single (V+): 2.7V ~ 16V
Supplier Device Package: 10-miniQFN (1.4x1.8)
-3db Bandwidth: 800MHz
On-State Resistance (Max): 145Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DG9252EN-T1-E4 |
![]() |
Виробник: Vishay Siliconix
Description: IC MULTIPLEXER DUAL 4CH 16QFN
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Voltage - Supply, Single (V+): 2.7V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 449MHz
On-State Resistance (Max): 182Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2.2pF, 6.6pF
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Crosstalk: -67dB @ 10MHz
Charge Injection: 4.1pC
Description: IC MULTIPLEXER DUAL 4CH 16QFN
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Voltage - Supply, Single (V+): 2.7V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 449MHz
On-State Resistance (Max): 182Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2.2pF, 6.6pF
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Crosstalk: -67dB @ 10MHz
Charge Injection: 4.1pC
товару немає в наявності
В кошику
од. на суму грн.
| DG9253EN-T1-E4 |
![]() |
Виробник: Vishay Siliconix
Description: IC MULTIPLEXER TRPL 2-CH 16QFN
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Package / Case: 16-WFQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 3
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2pF, 4.6pF
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -67dB @ 10MHz
Charge Injection: 4.1pC
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Voltage - Supply, Single (V+): 2.7V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 480MHz
On-State Resistance (Max): 182Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Description: IC MULTIPLEXER TRPL 2-CH 16QFN
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Package / Case: 16-WFQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 3
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2pF, 4.6pF
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -67dB @ 10MHz
Charge Injection: 4.1pC
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Voltage - Supply, Single (V+): 2.7V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 480MHz
On-State Resistance (Max): 182Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
товару немає в наявності
В кошику
од. на суму грн.
| SIP32413DNP-T1-GE4 |
![]() |
Виробник: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 8TDFN
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 8-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-TDFN (2x2)
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 8TDFN
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 8-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-TDFN (2x2)
Fault Protection: Reverse Current
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 22.82 грн |
| DG2537DQ-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: IC SWITCH SPST 4.5 OHM 10MSOP
Description: IC SWITCH SPST 4.5 OHM 10MSOP
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DG2538DQ-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: IC SWITCH SPST 4.5 OHM 10MSOP
Description: IC SWITCH SPST 4.5 OHM 10MSOP
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DG2539DQ-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: IC SWITCH SPST 4.5 OHM 10MSOP
Description: IC SWITCH SPST 4.5 OHM 10MSOP
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DG2599DN-T1-GE4 |
![]() |
Виробник: Vishay Siliconix
Description: IC SW DPDTX2 1.1OHM 16MINIQFN
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 9pF
Switch Time (Ton, Toff) (Max): 90ns, 70ns
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
Crosstalk: -110dB @ 1MHz
Charge Injection: 10pC
Voltage - Supply, Single (V+): 1.65V ~ 5V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 186MHz
On-State Resistance (Max): 1.1Ohm
Description: IC SW DPDTX2 1.1OHM 16MINIQFN
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 9pF
Switch Time (Ton, Toff) (Max): 90ns, 70ns
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
Crosstalk: -110dB @ 1MHz
Charge Injection: 10pC
Voltage - Supply, Single (V+): 1.65V ~ 5V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 186MHz
On-State Resistance (Max): 1.1Ohm
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| DG2735ADN-T1-GE4 |
![]() |
Виробник: Vishay Siliconix
Description: IC SW SPDTX2 500MOHM 10MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 500mOhm
-3db Bandwidth: 50MHz
Supplier Device Package: 10-miniQFN (1.4x1.8)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Crosstalk: -70dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 60mOhm
Switch Time (Ton, Toff) (Max): 78ns, 58ns
Channel Capacitance (CS(off), CD(off)): 55pF
Current - Leakage (IS(off)) (Max): 2nA
Part Status: Active
Number of Circuits: 2
Description: IC SW SPDTX2 500MOHM 10MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 500mOhm
-3db Bandwidth: 50MHz
Supplier Device Package: 10-miniQFN (1.4x1.8)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Crosstalk: -70dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 60mOhm
Switch Time (Ton, Toff) (Max): 78ns, 58ns
Channel Capacitance (CS(off), CD(off)): 55pF
Current - Leakage (IS(off)) (Max): 2nA
Part Status: Active
Number of Circuits: 2
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 30.32 грн |
| 6000+ | 28.51 грн |
| 9000+ | 28.16 грн |
| 15000+ | 26.07 грн |
| 21000+ | 25.86 грн |
| DG722DQ-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: IC SWITCH SPST-NCX2 4.5OHM 8MSOP
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
-3db Bandwidth: 366MHz
On-State Resistance (Max): 4.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Description: IC SWITCH SPST-NCX2 4.5OHM 8MSOP
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
-3db Bandwidth: 366MHz
On-State Resistance (Max): 4.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| DG9251EN-T1-E4 |
![]() |
Виробник: Vishay Siliconix
Description: IC MUX 8:1 182OHM 16MINIQFN
Number of Circuits: 1
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2.7pF, 10.7pF
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -67dB @ 10MHz
Charge Injection: 4.1pC
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Voltage - Supply, Single (V+): 2.7V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 314MHz
On-State Resistance (Max): 182Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Packaging: Tape & Reel (TR)
Description: IC MUX 8:1 182OHM 16MINIQFN
Number of Circuits: 1
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2.7pF, 10.7pF
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -67dB @ 10MHz
Charge Injection: 4.1pC
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Voltage - Supply, Single (V+): 2.7V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 314MHz
On-State Resistance (Max): 182Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| DG9454EN-T1-E4 |
![]() |
Виробник: Vishay Siliconix
Description: IC MUX SPDT TRIPLE 16QFN
Description: IC MUX SPDT TRIPLE 16QFN
товару немає в наявності
В кошику
од. на суму грн.
| SIC414CD-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: IC REG DL BUCK/LNR SYNC 28MLPQ
Description: IC REG DL BUCK/LNR SYNC 28MLPQ
товару немає в наявності
В кошику
од. на суму грн.
| SIC779CD-T1-GE3 |
Виробник: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 40A PPAK
Part Status: Active
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP66-40
Voltage - Load: 3V ~ 16V
Technology: DrMOS
Current - Output / Channel: 40A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP66-40
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Description: IC HALF BRIDGE DRIVER 40A PPAK
Part Status: Active
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP66-40
Voltage - Load: 3V ~ 16V
Technology: DrMOS
Current - Output / Channel: 40A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP66-40
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 83.01 грн |
| SIP32414DNP-T1-GE4 |
![]() |
Виробник: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 8TDFN
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 8-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-TDFN (2x2)
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 8TDFN
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 8-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-TDFN (2x2)
Fault Protection: Reverse Current
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 22.82 грн |
| SIHG47N60E-E3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 47A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 24A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 100 V
Description: MOSFET N-CH 600V 47A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 24A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 100 V
на замовлення 509 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 746.28 грн |
| 25+ | 437.09 грн |
| 100+ | 370.03 грн |
| 500+ | 296.97 грн |
| SIHF22N60E-E3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
Description: MOSFET N-CH 600V 21A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| SIHG22N60E-E3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
Description: MOSFET N-CH 600V 21A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 384.14 грн |
| 25+ | 213.81 грн |
| 100+ | 176.42 грн |
| 500+ | 137.48 грн |
| SiHB22N60E-E3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| SiHG30N60E-E3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 29A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 600V 29A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| SiHF30N60E-E3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 29A TO220
Description: MOSFET N-CH 600V 29A TO220
на замовлення 496 шт:
термін постачання 21-31 дні (днів)
| SIHG24N65E-E3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 650V 24A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 650V 24A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.


























