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SQ7002K-T1-GE3 SQ7002K-T1-GE3 Vishay Siliconix SQ7002K.pdf Description: MOSFET N-CH 60V 320MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 30 V
товар відсутній
SQ7414EN-T1-E3 SQ7414EN-T1-E3 Vishay Siliconix sq7414en.pdf Description: MOSFET N-CH 60V 5.6A PPAK 1212-8
товар відсутній
SQ7415EN-T1-E3 SQ7415EN-T1-E3 Vishay Siliconix sq7415en.pdf Description: MOSFET P-CH 60V 3.6A PPAK 1212-8
товар відсутній
SQ9945AEY-T1-E3 SQ9945AEY-T1-E3 Vishay Siliconix sq9945ae.pdf Description: MOSFET 2N-CH 60V 3.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
товар відсутній
SQD15N06-42L-GE3 SQD15N06-42L-GE3 Vishay Siliconix sqd15n06-42l.pdf Description: MOSFET N-CH 60V 15A TO252
товар відсутній
SQD19P06-60L_GE3 SQD19P06-60L_GE3 Vishay Siliconix sqd19p06.pdf Description: MOSFET P-CH 60V 20A TO252
товар відсутній
SQD23N06-31L-GE3 SQD23N06-31L-GE3 Vishay Siliconix sqd23n06-31l.pdf Description: MOSFET N-CH 60V 23A TO252
товар відсутній
SQD25N06-22L_GE3 SQD25N06-22L_GE3 Vishay Siliconix sqd25n06-22l.pdf Description: MOSFET N-CH 60V 25A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+44.24 грн
Мінімальне замовлення: 2000
SQD25N06-35L-GE3 Vishay Siliconix Description: MOSFET N-CH D-S 60V 25A TO252
товар відсутній
SQD25N15-52_GE3 SQD25N15-52_GE3 Vishay Siliconix sqd25n15-52.pdf Description: MOSFET N-CH 150V 25A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 15A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+116.75 грн
Мінімальне замовлення: 2000
SQD35N05-26L-GE3 SQD35N05-26L-GE3 Vishay Siliconix sqd35n05.pdf Description: MOSFET N-CH 55V 30A TO252
товар відсутній
SQD40N04-10A-GE3 SQD40N04-10A-GE3 Vishay Siliconix sqd40n04.pdf Description: MOSFET N-CH D-S 40V 42A TO252
товар відсутній
SQD40N06-25L-GE3 SQD40N06-25L-GE3 Vishay Siliconix Description: MOSFET N-CH 60V 30A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
товар відсутній
SQD40N10-25_GE3 SQD40N10-25_GE3 Vishay Siliconix sqd40n10-25.pdf Description: MOSFET N-CH 100V 40A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+195.2 грн
Мінімальне замовлення: 2000
SQD45N05-20L-GE3 SQD45N05-20L-GE3 Vishay Siliconix 72974.pdf Description: MOSFET N-CH 50V 50A TO252
товар відсутній
SQD45P03-12_GE3 SQD45P03-12_GE3 Vishay Siliconix sqd45p03.pdf Description: MOSFET P-CH 30V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3495 pF @ 15 V
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
2000+57.5 грн
6000+ 53.32 грн
10000+ 51.95 грн
Мінімальне замовлення: 2000
SQD50N02-04-GE3 SQD50N02-04-GE3 Vishay Siliconix sqd50n02.pdf Description: MOSFET N-CH D-S 20V 50A TO252
товар відсутній
SQD50N03-06P-GE3 SQD50N03-06P-GE3 Vishay Siliconix sqd50n03.pdf Description: MOSFET N-CH D-S 30V 50A TO252
товар відсутній
SQD50N03-09-GE3 SQD50N03-09-GE3 Vishay Siliconix sqd50n03.pdf Description: MOSFET N-CH D-S 30V 50A TO252
товар відсутній
SQD50N06-07L-GE3 SQD50N06-07L-GE3 Vishay Siliconix sqd50n06.pdf Description: MOSFET N-CH 60V 50A TO252
товар відсутній
SQD50N06-09L-GE3 SQD50N06-09L-GE3 Vishay Siliconix sqd50n06.pdf Description: MOSFET N-CH 60V 50A TO252
товар відсутній
SQD50P04-09L-GE3 SQD50P04-09L-GE3 Vishay Siliconix sqd50p04.pdf Description: MOSFET P-CH 40V 50A TO252
товар відсутній
SQD50P04-13L-GE3 SQD50P04-13L-GE3 Vishay Siliconix sqd50p04-13l.pdf Description: MOSFET P-CH 40V 50A TO252
товар відсутній
SQD50P06-15L_GE3 SQD50P06-15L_GE3 Vishay Siliconix sqd50p06.pdf Description: MOSFET P-CH 60V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5910 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+88.24 грн
Мінімальне замовлення: 2000
SQJ412EP-T1-GE3 SQJ412EP-T1-GE3 Vishay Siliconix sqj412ep.pdf Description: MOSFET N-CH 40V 32A PPAK SO-8
товар відсутній
SQJ456EP-T1-GE3 SQJ456EP-T1-GE3 Vishay Siliconix sqj456ep.pdf Description: MOSFET N-CH 100V 32A PPAK SO-8
товар відсутній
SQJ461EP-T1-GE3 SQJ461EP-T1-GE3 Vishay Siliconix sqj461ep.pdf Description: MOSFET P-CH 60V 30A 8-SO
товар відсутній
SQJ463EP-T1-GE3 SQJ463EP-T1-GE3 Vishay Siliconix sqj463ep.pdf Description: MOSFET P-CH 40V 30A PPAK SO-8
товар відсутній
SQJ469EP-T1_GE3 SQJ469EP-T1_GE3 Vishay Siliconix sqj469ep.pdf Description: MOSFET P-CH 80V 32A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.2A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+89.15 грн
6000+ 82.36 грн
Мінімальне замовлення: 3000
SQJ840EP-T1-GE3 SQJ840EP-T1-GE3 Vishay Siliconix sqj840ep.pdf Description: MOSFET N-CH 30V 30A PPAK SO-8
товар відсутній
SQJ844EP-T1-GE3 SQJ844EP-T1-GE3 Vishay Siliconix sqj844ep.pdf Description: MOSFET 2N-CH 30V 8A PPAK 8SOIC
товар відсутній
SQJ848EP-T1-GE3 SQJ848EP-T1-GE3 Vishay Siliconix sqj848ep.pdf Description: MOSFET N-CH D-S 40V PPAK 8SOIC
товар відсутній
SQJ850EP-T1-GE3 SQJ850EP-T1-GE3 Vishay Siliconix sqj850ep.pdf Description: MOSFET N-CH 60V 24A PPAK SO-8
товар відсутній
SQJ941EP-T1-GE3 SQJ941EP-T1-GE3 Vishay Siliconix sqj941ep.pdf Description: MOSFET 2P-CH 30V 8A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 55W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SQJ964EP-T1-GE3 SQJ964EP-T1-GE3 Vishay Siliconix sqj964ep.pdf Description: MOSFET 2N-CH 60V 8A 8SOIC
товар відсутній
SQJ970EP-T1-GE3 SQJ970EP-T1-GE3 Vishay Siliconix sqj970ep.pdf Description: MOSFET 2N-CH 40V 8A 8SOIC
товар відсутній
SQM110N04-02L-GE3 SQM110N04-02L-GE3 Vishay Siliconix sqm110n0.pdf Description: MOSFET N-CH D-S 40V TO263
товар відсутній
SQM110N04-03-GE3 SQM110N04-03-GE3 Vishay Siliconix sqm110n0.pdf Description: MOSFET N-CH D-S 40V TO263
товар відсутній
SQM110N04-03L-GE3 SQM110N04-03L-GE3 Vishay Siliconix sqm110n0.pdf Description: MOSFET N-CH D-S 40V TO263
товар відсутній
SQM110N04-04-GE3 SQM110N04-04-GE3 Vishay Siliconix sqm110n0.pdf Description: MOSFET N-CH D-S 40V TO263
товар відсутній
SQM110N05-06L_GE3 SQM110N05-06L_GE3 Vishay Siliconix sqm110n0.pdf Description: MOSFET N-CH 55V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
товар відсутній
SQM110N06-04L-GE3 SQM110N06-04L-GE3 Vishay Siliconix sqm110n0.pdf Description: MOSFET N-CH D-S 60V TO263
товар відсутній
SQM110N06-06-GE3 SQM110N06-06-GE3 Vishay Siliconix sqm110n0.pdf Description: MOSFET N-CH D-S 60V TO263
товар відсутній
SQM110N08-05-GE3 SQM110N08-05-GE3 Vishay Siliconix sqm110n0.pdf Description: MOSFET N-CH D-S 75V TO263
товар відсутній
SQM110N10-09-GE3 SQM110N10-09-GE3 Vishay Siliconix sqm110n1.pdf Description: MOSFET N-CH D-S 100V TO263
товар відсутній
SQM110P04-04L-GE3 SQM110P04-04L-GE3 Vishay Siliconix sqm110p0.pdf Description: MOSFET P-CH 40V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13980 pF @ 20 V
товар відсутній
SQM110P06-07L-GE3 SQM110P06-07L-GE3 Vishay Siliconix sqm110p0.pdf Description: MOSFET P-CH 60V 120A TO263
товар відсутній
SQM40N10-30_GE3 SQM40N10-30_GE3 Vishay Siliconix sqm40n10-30.pdf Description: MOSFET N-CH 100V 40A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3345 pF @ 25 V
товар відсутній
SQM40N15-38_GE3 SQM40N15-38_GE3 Vishay Siliconix sqm40n15.pdf Description: MOSFET N-CH 150V 40A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 15A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
товар відсутній
SQM60N06-15_GE3 SQM60N06-15_GE3 Vishay Siliconix sqm60n06-15.pdf Description: MOSFET N-CH 60V 56A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V
товар відсутній
SQM85N03-06P-GE3 SQM85N03-06P-GE3 Vishay Siliconix sqm85n03.pdf Description: MOSFET N-CH D-S 30V TO263
товар відсутній
SQM85N10-10-GE3 SQM85N10-10-GE3 Vishay Siliconix sqm85n10.pdf Description: MOSFET N-CH D-S 100V TO263
товар відсутній
SQM85N15-19_GE3 SQM85N15-19_GE3 Vishay Siliconix sqm85n15-19.pdf Description: MOSFET N-CH 150V 85A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6285 pF @ 25 V
товар відсутній
SQR40N10-25_GE3 SQR40N10-25_GE3 Vishay Siliconix sqr40n10-25.pdf Description: MOSFET N-CH 100V 40A TO252 REV
Packaging: Tape & Reel (TR)
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK) Reverse Lead
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V
товар відсутній
SQR50N03-06P-GE3 SQR50N03-06P-GE3 Vishay Siliconix sqr50n03.pdf Description: MOSFET N-CH D-S 30V TO263
товар відсутній
SQR50N06-07L-GE3 SQR50N06-07L-GE3 Vishay Siliconix sqr50n06.pdf Description: MOSFET N-CH D-S 60V TO263
товар відсутній
SQS400EN-T1-GE3 SQS400EN-T1-GE3 Vishay Siliconix sqs400en.pdf Description: MOSFET N-CH 40V 16A TO263
товар відсутній
SQS401EN-T1-GE3 SQS401EN-T1-GE3 Vishay Siliconix sqs401en.pdf Description: MOSFET P-CH 40V 16A PPAK 1212-8
товар відсутній
SUD08P06-155L-T4E3 SUD08P06-155L-T4E3 Vishay Siliconix Description: MOSFET P-CH 60V 8.4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 5A, 10V
Power Dissipation (Max): 1.7W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
товар відсутній
SUD15N15-95-E3 SUD15N15-95-E3 Vishay Siliconix sud15n15.pdf Description: MOSFET N-CH 150V 15A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
2000+62.47 грн
6000+ 57.89 грн
10000+ 55.98 грн
Мінімальне замовлення: 2000
SQ7002K-T1-GE3 SQ7002K.pdf
SQ7002K-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 320MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 30 V
товар відсутній
SQ7414EN-T1-E3 sq7414en.pdf
SQ7414EN-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 5.6A PPAK 1212-8
товар відсутній
SQ7415EN-T1-E3 sq7415en.pdf
SQ7415EN-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 3.6A PPAK 1212-8
товар відсутній
SQ9945AEY-T1-E3 sq9945ae.pdf
SQ9945AEY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 60V 3.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
товар відсутній
SQD15N06-42L-GE3 sqd15n06-42l.pdf
SQD15N06-42L-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 15A TO252
товар відсутній
SQD19P06-60L_GE3 sqd19p06.pdf
SQD19P06-60L_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 20A TO252
товар відсутній
SQD23N06-31L-GE3 sqd23n06-31l.pdf
SQD23N06-31L-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 23A TO252
товар відсутній
SQD25N06-22L_GE3 sqd25n06-22l.pdf
SQD25N06-22L_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 25A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+44.24 грн
Мінімальне замовлення: 2000
SQD25N06-35L-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 60V 25A TO252
товар відсутній
SQD25N15-52_GE3 sqd25n15-52.pdf
SQD25N15-52_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 150V 25A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 15A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+116.75 грн
Мінімальне замовлення: 2000
SQD35N05-26L-GE3 sqd35n05.pdf
SQD35N05-26L-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 55V 30A TO252
товар відсутній
SQD40N04-10A-GE3 sqd40n04.pdf
SQD40N04-10A-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 40V 42A TO252
товар відсутній
SQD40N06-25L-GE3
SQD40N06-25L-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 30A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
товар відсутній
SQD40N10-25_GE3 sqd40n10-25.pdf
SQD40N10-25_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 40A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+195.2 грн
Мінімальне замовлення: 2000
SQD45N05-20L-GE3 72974.pdf
SQD45N05-20L-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 50V 50A TO252
товар відсутній
SQD45P03-12_GE3 sqd45p03.pdf
SQD45P03-12_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3495 pF @ 15 V
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+57.5 грн
6000+ 53.32 грн
10000+ 51.95 грн
Мінімальне замовлення: 2000
SQD50N02-04-GE3 sqd50n02.pdf
SQD50N02-04-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 20V 50A TO252
товар відсутній
SQD50N03-06P-GE3 sqd50n03.pdf
SQD50N03-06P-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 30V 50A TO252
товар відсутній
SQD50N03-09-GE3 sqd50n03.pdf
SQD50N03-09-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 30V 50A TO252
товар відсутній
SQD50N06-07L-GE3 sqd50n06.pdf
SQD50N06-07L-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO252
товар відсутній
SQD50N06-09L-GE3 sqd50n06.pdf
SQD50N06-09L-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO252
товар відсутній
SQD50P04-09L-GE3 sqd50p04.pdf
SQD50P04-09L-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO252
товар відсутній
SQD50P04-13L-GE3 sqd50p04-13l.pdf
SQD50P04-13L-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO252
товар відсутній
SQD50P06-15L_GE3 sqd50p06.pdf
SQD50P06-15L_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5910 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+88.24 грн
Мінімальне замовлення: 2000
SQJ412EP-T1-GE3 sqj412ep.pdf
SQJ412EP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 32A PPAK SO-8
товар відсутній
SQJ456EP-T1-GE3 sqj456ep.pdf
SQJ456EP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 32A PPAK SO-8
товар відсутній
SQJ461EP-T1-GE3 sqj461ep.pdf
SQJ461EP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 30A 8-SO
товар відсутній
SQJ463EP-T1-GE3 sqj463ep.pdf
SQJ463EP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 30A PPAK SO-8
товар відсутній
SQJ469EP-T1_GE3 sqj469ep.pdf
SQJ469EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 80V 32A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.2A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+89.15 грн
6000+ 82.36 грн
Мінімальне замовлення: 3000
SQJ840EP-T1-GE3 sqj840ep.pdf
SQJ840EP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 30A PPAK SO-8
товар відсутній
SQJ844EP-T1-GE3 sqj844ep.pdf
SQJ844EP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A PPAK 8SOIC
товар відсутній
SQJ848EP-T1-GE3 sqj848ep.pdf
SQJ848EP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 40V PPAK 8SOIC
товар відсутній
SQJ850EP-T1-GE3 sqj850ep.pdf
SQJ850EP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 24A PPAK SO-8
товар відсутній
SQJ941EP-T1-GE3 sqj941ep.pdf
SQJ941EP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 30V 8A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 55W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SQJ964EP-T1-GE3 sqj964ep.pdf
SQJ964EP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 60V 8A 8SOIC
товар відсутній
SQJ970EP-T1-GE3 sqj970ep.pdf
SQJ970EP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 40V 8A 8SOIC
товар відсутній
SQM110N04-02L-GE3 sqm110n0.pdf
SQM110N04-02L-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 40V TO263
товар відсутній
SQM110N04-03-GE3 sqm110n0.pdf
SQM110N04-03-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 40V TO263
товар відсутній
SQM110N04-03L-GE3 sqm110n0.pdf
SQM110N04-03L-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 40V TO263
товар відсутній
SQM110N04-04-GE3 sqm110n0.pdf
SQM110N04-04-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 40V TO263
товар відсутній
SQM110N05-06L_GE3 sqm110n0.pdf
SQM110N05-06L_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 55V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
товар відсутній
SQM110N06-04L-GE3 sqm110n0.pdf
SQM110N06-04L-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 60V TO263
товар відсутній
SQM110N06-06-GE3 sqm110n0.pdf
SQM110N06-06-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 60V TO263
товар відсутній
SQM110N08-05-GE3 sqm110n0.pdf
SQM110N08-05-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 75V TO263
товар відсутній
SQM110N10-09-GE3 sqm110n1.pdf
SQM110N10-09-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 100V TO263
товар відсутній
SQM110P04-04L-GE3 sqm110p0.pdf
SQM110P04-04L-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13980 pF @ 20 V
товар відсутній
SQM110P06-07L-GE3 sqm110p0.pdf
SQM110P06-07L-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 120A TO263
товар відсутній
SQM40N10-30_GE3 sqm40n10-30.pdf
SQM40N10-30_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 40A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3345 pF @ 25 V
товар відсутній
SQM40N15-38_GE3 sqm40n15.pdf
SQM40N15-38_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 150V 40A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 15A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3390 pF @ 25 V
товар відсутній
SQM60N06-15_GE3 sqm60n06-15.pdf
SQM60N06-15_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 56A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V
товар відсутній
SQM85N03-06P-GE3 sqm85n03.pdf
SQM85N03-06P-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 30V TO263
товар відсутній
SQM85N10-10-GE3 sqm85n10.pdf
SQM85N10-10-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 100V TO263
товар відсутній
SQM85N15-19_GE3 sqm85n15-19.pdf
SQM85N15-19_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 150V 85A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6285 pF @ 25 V
товар відсутній
SQR40N10-25_GE3 sqr40n10-25.pdf
SQR40N10-25_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 40A TO252 REV
Packaging: Tape & Reel (TR)
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK) Reverse Lead
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V
товар відсутній
SQR50N03-06P-GE3 sqr50n03.pdf
SQR50N03-06P-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 30V TO263
товар відсутній
SQR50N06-07L-GE3 sqr50n06.pdf
SQR50N06-07L-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH D-S 60V TO263
товар відсутній
SQS400EN-T1-GE3 sqs400en.pdf
SQS400EN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 16A TO263
товар відсутній
SQS401EN-T1-GE3 sqs401en.pdf
SQS401EN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 16A PPAK 1212-8
товар відсутній
SUD08P06-155L-T4E3
SUD08P06-155L-T4E3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 8.4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 5A, 10V
Power Dissipation (Max): 1.7W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
товар відсутній
SUD15N15-95-E3 sud15n15.pdf
SUD15N15-95-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 150V 15A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+62.47 грн
6000+ 57.89 грн
10000+ 55.98 грн
Мінімальне замовлення: 2000
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