Продукція > VISHAY SILICONIX > Всі товари виробника VISHAY SILICONIX (11808) > Сторінка 89 з 197
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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SI4936CDY-T1-GE3 | Vishay Siliconix |
 Description: MOSFET 2N-CH 30V 5.8A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 16352 шт: термін постачання 21-31 дні (днів) |
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SI5906DU-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 6A PPAK FET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI7114ADN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 35A PPAK 1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V Power Dissipation (Max): 3.7W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V |
на замовлення 24903 шт: термін постачання 21-31 дні (днів) |
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SI7129DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 35A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 14.4A, 10V Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3345 pF @ 15 V |
на замовлення 6766 шт: термін постачання 21-31 дні (днів) |
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SI7137DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 60A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 25A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 10 V |
на замовлення 18281 шт: термін постачання 21-31 дні (днів) |
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SI7460DP-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 11A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V |
на замовлення 2138 шт: термін постачання 21-31 дні (днів) |
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SI7615DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 35A PPAK1212-8 Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Cut Tape (CT) |
на замовлення 7121 шт: термін постачання 21-31 дні (днів) |
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SI7633DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 60A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
на замовлення 5936 шт: термін постачання 21-31 дні (днів) |
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SI7998DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 25A PPAK SO8 Drain to Source Voltage (Vdss): 30V Power - Max: 22W, 40W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Cut Tape (CT) Supplier Device Package: PowerPAK® SO-8 Dual Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Rds On (Max) @ Id, Vgs: 9.3mOhm @ 15A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Current - Continuous Drain (Id) @ 25°C: 25A, 30A |
на замовлення 2057 шт: термін постачання 21-31 дні (днів) |
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SI9120DY-T1-E3 | Vishay Siliconix |
Description: IC OFFLINE SW MULT TOP 16SOIC Supplier Device Package: 16-SOIC Voltage - Supply (Vcc/Vdd): 9.5V ~ 13.5V Topology: Flyback, Forward Output Isolation: Isolated Internal Switch(s): No Frequency - Switching: 40kHz ~ 1MHz Duty Cycle: 50% Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIA431DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 12A PPAK SC70-6 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 850mV @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V |
на замовлення 8797 шт: термін постачання 21-31 дні (днів) |
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SIA906EDJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 20V 4.5A PPAK8X8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 7.8W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual |
на замовлення 79208 шт: термін постачання 21-31 дні (днів) |
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SIA921EDJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 20V 4.5A PPAK8X8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 7.8W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 59mOhm @ 3.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual |
на замовлення 28761 шт: термін постачання 21-31 дні (днів) |
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SIB408DK-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 7A PPAK SC75-6L |
на замовлення 8351 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SIHB22N60S-E3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 22A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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SIHF22N60S-E3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 22A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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SIP21106DR-33-E3 | Vishay Siliconix |
Description: IC REG LINEAR 3.3V 150MA SC70-5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIR416DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 50A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V Power Dissipation (Max): 5.2W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 20 V |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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SIR422DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 40A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 34.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1785 pF @ 20 V |
на замовлення 1143 шт: термін постачання 21-31 дні (днів) |
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SIR436DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 25V 40A PPAK SO-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIS410DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 35A PPAK 1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V |
на замовлення 6315 шт: термін постачання 21-31 дні (днів) |
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SIS436DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 25V 16A PPAK 1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SUD25N15-52-E3 | Vishay Siliconix |
Description: MOSFET N-CH 150V 25A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V Power Dissipation (Max): 3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V |
на замовлення 2707 шт: термін постачання 21-31 дні (днів) |
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SUD40N08-16-E3 | Vishay Siliconix |
Description: MOSFET N-CH 80V 40A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V Power Dissipation (Max): 3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V |
на замовлення 5153 шт: термін постачання 21-31 дні (днів) |
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SUD50N06-09L-E3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 50A TO252 Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
на замовлення 96 шт: термін постачання 21-31 дні (днів) |
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SUD50P06-15L-E3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 50A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V Power Dissipation (Max): 3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V |
на замовлення 39799 шт: термін постачання 21-31 дні (днів) |
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SUD50P10-43L-E3 | Vishay Siliconix |
Description: MOSFET P-CH 100V 37.1A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 37.1A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 9.2A, 10V Power Dissipation (Max): 8.3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V |
на замовлення 41950 шт: термін постачання 21-31 дні (днів) |
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SUM110N03-04P-E3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 110A TO263 Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.75W (Ta), 120W (Tc) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI1406DH-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 3.1A SC70-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI5906DU-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 6A PPAK FET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIB408DK-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 7A PPAK SC75-6L |
на замовлення 8351 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SI8439DB-T1-E1 | Vishay Siliconix |
Description: MOSFET P-CH 8V MICROFOOT |
на замовлення 112 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SIHF10N40D-E3 | Vishay Siliconix |
Description: MOSFET N-CH 400V 10A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIHF6N40D-E3 | Vishay Siliconix |
Description: MOSFET N-CH 400V 6A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIHP6N40D-E3 | Vishay Siliconix |
Description: MOSFET N-CH 400V 6A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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SIZ920DT-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 40A 8POWERPAIR Supplier Device Package: 8-PowerPair® (6x5) Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Rds On (Max) @ Id, Vgs: 7.1mOhm @ 18.9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V Current - Continuous Drain (Id) @ 25°C: 40A Drain to Source Voltage (Vdss): 30V Power - Max: 39W, 100W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI8439DB-T1-E1 | Vishay Siliconix |
Description: MOSFET P-CH 8V MICROFOOT |
на замовлення 112 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SI1442DH-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 12V 4A SC70-6 Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SC-70-6 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
на замовлення 59892 шт: термін постачання 21-31 дні (днів) |
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SIS890DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 30A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 23.5mOhm @ 10A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 802 pF @ 50 V |
на замовлення 20925 шт: термін постачання 21-31 дні (днів) |
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SIZ920DT-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 40A 8POWERPAIR Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) Supplier Device Package: 8-PowerPair® (6x5) Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Rds On (Max) @ Id, Vgs: 7.1mOhm @ 18.9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V Current - Continuous Drain (Id) @ 25°C: 40A Drain to Source Voltage (Vdss): 30V Power - Max: 39W, 100W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI8439DB-T1-E1 | Vishay Siliconix |
Description: MOSFET P-CH 8V MICROFOOT |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SI1442DH-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 12V 4A SC70-6 Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SC-70-6 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
на замовлення 57000 шт: термін постачання 21-31 дні (днів) |
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SIS890DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 30A PPAK1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 23.5mOhm @ 10A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 802 pF @ 50 V |
на замовлення 20400 шт: термін постачання 21-31 дні (днів) |
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SIP12107DMP-T1-GE3 | Vishay Siliconix |
Description: IC REG BUCK ADJ 3A 16QFN Voltage - Output (Min/Fixed): 0.6V Voltage - Input (Min): 2.8V Voltage - Output (Max): 4.68V Synchronous Rectifier: Yes Supplier Device Package: 16-QFN (3x3) Topology: Buck Voltage - Input (Max): 5.5V Frequency - Switching: 200kHz ~ 4MHz Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TA) Current - Output: 3A Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 16-SMD Packaging: Cut Tape (CT) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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SIP12107DMP-T1-GE3 | Vishay Siliconix |
Description: IC REG BUCK ADJ 3A 16QFN Voltage - Output (Min/Fixed): 0.6V Voltage - Input (Min): 2.8V Voltage - Output (Max): 4.68V Synchronous Rectifier: Yes Supplier Device Package: 16-QFN (3x3) Topology: Buck Voltage - Input (Max): 5.5V Frequency - Switching: 200kHz ~ 4MHz Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TA) Current - Output: 3A Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 16-SMD Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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SUM90N03-2M2P-E3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 90A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 32A, 10V Power Dissipation (Max): 3.75W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 257 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12065 pF @ 15 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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SIC778ACD-T1-GE3 | Vishay Siliconix |
Description: IC BUCK ADJ 40A 40MLP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIC778CD-T1-GE3 | Vishay Siliconix | Description: IC BUCK ADJ 40A 40MLP |
на замовлення 25 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SIC778ACD-T1-GE3 | Vishay Siliconix |
Description: IC BUCK ADJ 40A 40MLP |
на замовлення 2842 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SIC780CD-T1-GE3 | Vishay Siliconix |
Description: IC HALF BRIDGE DRIVER 50A PPAK Features: Bootstrap Circuit, Diode Emulation, Status Flag Packaging: Cut Tape (CT) Package / Case: PowerPAK® MLP66-40 Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 5.5V Applications: Synchronous Buck Converters Current - Output / Channel: 50A Technology: DrMOS Voltage - Load: 4.5V ~ 18V Supplier Device Package: PowerPAK® MLP66-40 Fault Protection: Over Temperature, Shoot-Through, UVLO Load Type: Inductive Part Status: Active |
на замовлення 4110 шт: термін постачання 21-31 дні (днів) |
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SIC778CD-T1-GE3 | Vishay Siliconix | Description: IC BUCK ADJ 40A 40MLP |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SIC778ACD-T1-GE3 | Vishay Siliconix |
Description: IC BUCK ADJ 40A 40MLP |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SIC780CD-T1-GE3 | Vishay Siliconix |
Description: IC HALF BRIDGE DRIVER 50A PPAK Features: Bootstrap Circuit, Diode Emulation, Status Flag Packaging: Tape & Reel (TR) Package / Case: PowerPAK® MLP66-40 Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 5.5V Applications: Synchronous Buck Converters Current - Output / Channel: 50A Technology: DrMOS Voltage - Load: 4.5V ~ 18V Supplier Device Package: PowerPAK® MLP66-40 Fault Protection: Over Temperature, Shoot-Through, UVLO Load Type: Inductive Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SIC413CB-T1-E3 | Vishay Siliconix |
Description: IC REG BUCK ADJ 4A SYNC 8SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIC762CD-T1-GE3 | Vishay Siliconix |
Description: IC CTLR PFC STAGE PPAK MLP66-40 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIC769CD-T1-E3 | Vishay Siliconix |
Description: IC CTLR PFC STAGE PPAK MLP66-40 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIC413CB-T1-E3 | Vishay Siliconix |
Description: IC REG BUCK ADJ 4A SYNC 8SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIR880ADP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 80V 60A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 10V Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2289 pF @ 40 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SI4056DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 11.1A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.1A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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SIS892ADN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 28A PPAK1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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| SI4936CDY-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 30V 5.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 16352 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 75.24 грн |
| 10+ | 44.86 грн |
| 50+ | 33.11 грн |
| 100+ | 27.50 грн |
| 500+ | 21.19 грн |
| SI5906DU-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6A PPAK FET
Description: MOSFET 2N-CH 30V 6A PPAK FET
товару немає в наявності
В кошику
од. на суму грн.
| SI7114ADN-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
Description: MOSFET N-CH 30V 35A PPAK 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
на замовлення 24903 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 75.24 грн |
| 10+ | 64.13 грн |
| 100+ | 49.15 грн |
| 500+ | 36.46 грн |
| 1000+ | 29.17 грн |
| SI7129DN-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 35A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 14.4A, 10V
Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3345 pF @ 15 V
Description: MOSFET P-CH 30V 35A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 14.4A, 10V
Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3345 pF @ 15 V
на замовлення 6766 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 111.27 грн |
| 10+ | 67.83 грн |
| 100+ | 45.10 грн |
| 500+ | 33.20 грн |
| 1000+ | 30.26 грн |
| SI7137DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 25A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 10 V
Description: MOSFET P-CH 20V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 25A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 10 V
на замовлення 18281 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 247.35 грн |
| 10+ | 154.78 грн |
| 50+ | 119.08 грн |
| 100+ | 100.95 грн |
| 500+ | 82.01 грн |
| SI7460DP-T1-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 11A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Description: MOSFET N-CH 60V 11A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
на замовлення 2138 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 286.57 грн |
| 10+ | 180.76 грн |
| 100+ | 126.58 грн |
| 500+ | 97.07 грн |
| 1000+ | 90.09 грн |
| SI7615DN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 35A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 35A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
на замовлення 7121 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 163.30 грн |
| 10+ | 100.59 грн |
| 50+ | 76.14 грн |
| 100+ | 64.04 грн |
| 500+ | 51.06 грн |
| SI7633DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
на замовлення 5936 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 180.11 грн |
| 10+ | 111.23 грн |
| 100+ | 75.90 грн |
| 500+ | 57.03 грн |
| 1000+ | 52.47 грн |
| SI7998DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 25A PPAK SO8
Drain to Source Voltage (Vdss): 30V
Power - Max: 22W, 40W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 25A, 30A
Description: MOSFET 2N-CH 30V 25A PPAK SO8
Drain to Source Voltage (Vdss): 30V
Power - Max: 22W, 40W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 25A, 30A
на замовлення 2057 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 157.69 грн |
| 10+ | 97.20 грн |
| 100+ | 65.87 грн |
| 500+ | 49.24 грн |
| 1000+ | 45.19 грн |
| SI9120DY-T1-E3 |
|
Виробник: Vishay Siliconix
Description: IC OFFLINE SW MULT TOP 16SOIC
Supplier Device Package: 16-SOIC
Voltage - Supply (Vcc/Vdd): 9.5V ~ 13.5V
Topology: Flyback, Forward
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 40kHz ~ 1MHz
Duty Cycle: 50%
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC OFFLINE SW MULT TOP 16SOIC
Supplier Device Package: 16-SOIC
Voltage - Supply (Vcc/Vdd): 9.5V ~ 13.5V
Topology: Flyback, Forward
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 40kHz ~ 1MHz
Duty Cycle: 50%
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SIA431DJ-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V
Description: MOSFET P-CH 20V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V
на замовлення 8797 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 64.84 грн |
| 10+ | 38.85 грн |
| 100+ | 25.28 грн |
| 500+ | 18.25 грн |
| 1000+ | 16.48 грн |
| SIA906EDJ-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.5A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Description: MOSFET 2N-CH 20V 4.5A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
на замовлення 79208 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 66.44 грн |
| 10+ | 39.62 грн |
| 50+ | 29.14 грн |
| 100+ | 24.15 грн |
| 500+ | 18.51 грн |
| SIA921EDJ-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.5A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 59mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Description: MOSFET 2P-CH 20V 4.5A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 59mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
на замовлення 28761 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 75.24 грн |
| 10+ | 45.40 грн |
| 100+ | 29.74 грн |
| 500+ | 21.59 грн |
| 1000+ | 19.55 грн |
| SIB408DK-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 7A PPAK SC75-6L
Description: MOSFET N-CH 30V 7A PPAK SC75-6L
на замовлення 8351 шт:
термін постачання 21-31 дні (днів)
| SIHB22N60S-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 22A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V
Description: MOSFET N-CH 600V 22A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| SIHF22N60S-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 22A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V
Description: MOSFET N-CH 600V 22A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| SIP21106DR-33-E3 |
|
Виробник: Vishay Siliconix
Description: IC REG LINEAR 3.3V 150MA SC70-5
Description: IC REG LINEAR 3.3V 150MA SC70-5
товару немає в наявності
В кошику
од. на суму грн.
| SIR416DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 50A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 20 V
Description: MOSFET N-CH 40V 50A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 20 V
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 144.89 грн |
| 10+ | 88.57 грн |
| 100+ | 59.66 грн |
| 500+ | 44.36 грн |
| 1000+ | 40.62 грн |
| SIR422DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 34.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1785 pF @ 20 V
Description: MOSFET N-CH 40V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 34.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1785 pF @ 20 V
на замовлення 1143 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 124.87 грн |
| 10+ | 76.31 грн |
| 100+ | 51.14 грн |
| 500+ | 37.86 грн |
| 1000+ | 34.60 грн |
| SIR436DP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 25V 40A PPAK SO-8
Description: MOSFET N-CH 25V 40A PPAK SO-8
товару немає в наявності
В кошику
од. на суму грн.
| SIS410DN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 35A PPAK 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V
Description: MOSFET N-CH 20V 35A PPAK 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V
на замовлення 6315 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 111.27 грн |
| 10+ | 67.37 грн |
| 100+ | 45.02 грн |
| 500+ | 33.23 грн |
| 1000+ | 30.32 грн |
| SIS436DN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 25V 16A PPAK 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
Description: MOSFET N-CH 25V 16A PPAK 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| SUD25N15-52-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 150V 25A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
Description: MOSFET N-CH 150V 25A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V
на замовлення 2707 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 236.94 грн |
| 10+ | 148.61 грн |
| 100+ | 103.18 грн |
| 500+ | 78.59 грн |
| 1000+ | 76.97 грн |
| SUD40N08-16-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 80V 40A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Description: MOSFET N-CH 80V 40A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
на замовлення 5153 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 246.54 грн |
| 10+ | 163.49 грн |
| 100+ | 119.15 грн |
| 500+ | 93.52 грн |
| 1000+ | 90.57 грн |
| SUD50N06-09L-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO252
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 60V 50A TO252
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 96 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 355.41 грн |
| 10+ | 226.62 грн |
| SUD50P06-15L-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
Description: MOSFET P-CH 60V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
на замовлення 39799 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 252.95 грн |
| 10+ | 158.56 грн |
| 50+ | 122.10 грн |
| 100+ | 103.56 грн |
| 500+ | 84.22 грн |
| SUD50P10-43L-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 100V 37.1A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 37.1A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 9.2A, 10V
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V
Description: MOSFET P-CH 100V 37.1A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 37.1A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 9.2A, 10V
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V
на замовлення 41950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 252.95 грн |
| 10+ | 158.56 грн |
| 100+ | 110.31 грн |
| 500+ | 84.18 грн |
| 1000+ | 83.15 грн |
| SUM110N03-04P-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 110A TO263
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Description: MOSFET N-CH 30V 110A TO263
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
товару немає в наявності
В кошику
од. на суму грн.
| SI1406DH-T1-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 3.1A SC70-6
Description: MOSFET N-CH 20V 3.1A SC70-6
товару немає в наявності
В кошику
од. на суму грн.
| SI5906DU-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6A PPAK FET
Description: MOSFET 2N-CH 30V 6A PPAK FET
товару немає в наявності
В кошику
од. на суму грн.
| SIB408DK-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 7A PPAK SC75-6L
Description: MOSFET N-CH 30V 7A PPAK SC75-6L
на замовлення 8351 шт:
термін постачання 21-31 дні (днів)
| SI8439DB-T1-E1 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 8V MICROFOOT
Description: MOSFET P-CH 8V MICROFOOT
на замовлення 112 шт:
термін постачання 21-31 дні (днів)
| SIHF10N40D-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 100 V
Description: MOSFET N-CH 400V 10A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| SIHF6N40D-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 400V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 100 V
Description: MOSFET N-CH 400V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 100 V
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од. на суму грн.
| SIHP6N40D-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 400V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 100 V
Description: MOSFET N-CH 400V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| SIZ920DT-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 40A 8POWERPAIR
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 18.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 30V
Power - Max: 39W, 100W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 40A 8POWERPAIR
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 18.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 30V
Power - Max: 39W, 100W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
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В кошику
од. на суму грн.
| SI8439DB-T1-E1 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 8V MICROFOOT
Description: MOSFET P-CH 8V MICROFOOT
на замовлення 112 шт:
термін постачання 21-31 дні (днів)
| SI1442DH-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 12V 4A SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 12V 4A SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 59892 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.82 грн |
| 13+ | 24.13 грн |
| 100+ | 15.35 грн |
| 500+ | 10.84 грн |
| 1000+ | 9.69 грн |
| SIS890DN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 30A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 802 pF @ 50 V
Description: MOSFET N-CH 100V 30A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 802 pF @ 50 V
на замовлення 20925 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 145.69 грн |
| 10+ | 89.80 грн |
| 100+ | 60.54 грн |
| 500+ | 45.07 грн |
| 1000+ | 41.29 грн |
| SIZ920DT-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 40A 8POWERPAIR
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 18.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 30V
Power - Max: 39W, 100W
Description: MOSFET 2N-CH 30V 40A 8POWERPAIR
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 18.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 30V
Power - Max: 39W, 100W
товару немає в наявності
В кошику
од. на суму грн.
| SI8439DB-T1-E1 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 8V MICROFOOT
Description: MOSFET P-CH 8V MICROFOOT
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SI1442DH-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 12V 4A SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 12V 4A SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
на замовлення 57000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 9.10 грн |
| 6000+ | 7.98 грн |
| 9000+ | 7.57 грн |
| 15000+ | 6.69 грн |
| 21000+ | 6.43 грн |
| 30000+ | 6.19 грн |
| SIS890DN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 30A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 802 pF @ 50 V
Description: MOSFET N-CH 100V 30A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 802 pF @ 50 V
на замовлення 20400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 40.38 грн |
| 6000+ | 36.32 грн |
| 9000+ | 35.01 грн |
| 15000+ | 32.10 грн |
| SIP12107DMP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: IC REG BUCK ADJ 3A 16QFN
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 2.8V
Voltage - Output (Max): 4.68V
Synchronous Rectifier: Yes
Supplier Device Package: 16-QFN (3x3)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 200kHz ~ 4MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 3A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-SMD
Packaging: Cut Tape (CT)
Description: IC REG BUCK ADJ 3A 16QFN
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 2.8V
Voltage - Output (Max): 4.68V
Synchronous Rectifier: Yes
Supplier Device Package: 16-QFN (3x3)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 200kHz ~ 4MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 3A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-SMD
Packaging: Cut Tape (CT)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 116.07 грн |
| 10+ | 100.05 грн |
| 25+ | 94.90 грн |
| 100+ | 73.16 грн |
| 250+ | 68.39 грн |
| 500+ | 60.44 грн |
| 1000+ | 46.93 грн |
| SIP12107DMP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: IC REG BUCK ADJ 3A 16QFN
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 2.8V
Voltage - Output (Max): 4.68V
Synchronous Rectifier: Yes
Supplier Device Package: 16-QFN (3x3)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 200kHz ~ 4MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 3A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-SMD
Packaging: Tape & Reel (TR)
Description: IC REG BUCK ADJ 3A 16QFN
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 2.8V
Voltage - Output (Max): 4.68V
Synchronous Rectifier: Yes
Supplier Device Package: 16-QFN (3x3)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 200kHz ~ 4MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 3A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-SMD
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 49.28 грн |
| SUM90N03-2M2P-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 32A, 10V
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 257 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12065 pF @ 15 V
Description: MOSFET N-CH 30V 90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 32A, 10V
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 257 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12065 pF @ 15 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 121.14 грн |
| SIC778ACD-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: IC BUCK ADJ 40A 40MLP
Description: IC BUCK ADJ 40A 40MLP
товару немає в наявності
В кошику
од. на суму грн.
| SIC778CD-T1-GE3 |
Виробник: Vishay Siliconix
Description: IC BUCK ADJ 40A 40MLP
Description: IC BUCK ADJ 40A 40MLP
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
| SIC778ACD-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: IC BUCK ADJ 40A 40MLP
Description: IC BUCK ADJ 40A 40MLP
на замовлення 2842 шт:
термін постачання 21-31 дні (днів)
| SIC780CD-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP66-40
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: DrMOS
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP66-40
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP66-40
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: DrMOS
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP66-40
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
на замовлення 4110 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 180.11 грн |
| 10+ | 129.04 грн |
| 25+ | 117.87 грн |
| 100+ | 99.10 грн |
| 250+ | 93.60 грн |
| 500+ | 90.29 грн |
| 1000+ | 86.13 грн |
| SIC778CD-T1-GE3 |
Виробник: Vishay Siliconix
Description: IC BUCK ADJ 40A 40MLP
Description: IC BUCK ADJ 40A 40MLP
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SIC778ACD-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: IC BUCK ADJ 40A 40MLP
Description: IC BUCK ADJ 40A 40MLP
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SIC780CD-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP66-40
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: DrMOS
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP66-40
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP66-40
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: DrMOS
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP66-40
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SIC413CB-T1-E3 |
|
Виробник: Vishay Siliconix
Description: IC REG BUCK ADJ 4A SYNC 8SOIC
Description: IC REG BUCK ADJ 4A SYNC 8SOIC
товару немає в наявності
В кошику
од. на суму грн.
| SIC762CD-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: IC CTLR PFC STAGE PPAK MLP66-40
Description: IC CTLR PFC STAGE PPAK MLP66-40
товару немає в наявності
В кошику
од. на суму грн.
| SIC769CD-T1-E3 |
|
Виробник: Vishay Siliconix
Description: IC CTLR PFC STAGE PPAK MLP66-40
Description: IC CTLR PFC STAGE PPAK MLP66-40
товару немає в наявності
В кошику
од. на суму грн.
| SIC413CB-T1-E3 |
|
Виробник: Vishay Siliconix
Description: IC REG BUCK ADJ 4A SYNC 8SOIC
Description: IC REG BUCK ADJ 4A SYNC 8SOIC
товару немає в наявності
В кошику
од. на суму грн.
| SIR880ADP-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 80V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2289 pF @ 40 V
Description: MOSFET N-CH 80V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2289 pF @ 40 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SI4056DY-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 11.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 50 V
Description: MOSFET N-CH 100V 11.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 50 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| SIS892ADN-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 28A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
Description: MOSFET N-CH 100V 28A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 31.54 грн |
| 6000+ | 28.25 грн |
| 9000+ | 27.18 грн |
| 15000+ | 24.37 грн |