Продукція > VISHAY SILICONIX > Всі товари виробника VISHAY SILICONIX (11098) > Сторінка 87 з 185
| Фото | Назва | Виробник | Інформація |
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SQ1431EH-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 3A SC70 |
на замовлення 906 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SQ1470EH-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 2.8A SC70 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SQ3456BEV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 7.8A 6TSOP |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SQ3460EV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 8A 6TSOP |
на замовлення 541 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SQ2360EES-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 4.4A TO236Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SQ3442EV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 4.3A 6TSOP |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SQ1421EDH-T1_GE3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 1.6A SC70-6Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 2A, 10V Power Dissipation (Max): 3.3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SQ2361EES-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 2.5A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 2.4A, 10V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SQ3427EEV-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 5.5A 6TSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SQ3419EEV-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 40V 7.4A 6TSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SQ3418EEV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 8A 6TSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SQ3426EEV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 7A 6TSOP |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SQ1431EH-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 3A SC70 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SQ1470EH-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 2.8A SC70 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SQ3456BEV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 7.8A 6TSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SQ3460EV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 8A 6TSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIR878ADP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 40A PPAK SO-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIR826DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 80V 60A PPAK SO-8Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V |
на замовлення 2013 шт: термін постачання 21-31 дні (днів) |
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SIR878ADP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 40A PPAK SO-8 |
на замовлення 1581 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SIR878ADP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 40A PPAK SO-8 |
на замовлення 1581 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SIR870ADP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 60A PPAK SO-8Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2866 pF @ 50 V |
на замовлення 10732 шт: термін постачання 21-31 дні (днів) |
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SIR882ADP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 60A PPAK SO-8Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 50 V |
на замовлення 7634 шт: термін постачання 21-31 дні (днів) |
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SIHB22N60E-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 21A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIHB30N60E-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 29A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V |
на замовлення 515 шт: термін постачання 21-31 дні (днів) |
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SIR826DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 80V 60A PPAK SO-8Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIR870ADP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 60A PPAK SO-8Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2866 pF @ 50 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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SIR882ADP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 60A PPAK SO-8Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 50 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SIP32401ADNP-T1GE4 | Vishay Siliconix |
Description: IC PWR SWITCH N-CHAN 1:1 4TDFNPackaging: Cut Tape (CT) Features: Slew Rate Controlled Package / Case: 4-UFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 62mOhm Input Type: Non-Inverting Voltage - Load: 1.1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.4A Ratio - Input:Output: 1:1 Supplier Device Package: 4-TDFN (1.2x1.6) Fault Protection: Reverse Current Part Status: Active |
на замовлення 18309 шт: термін постачання 21-31 дні (днів) |
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SiP32402ADNP-T1GE4 | Vishay Siliconix |
Description: IC PWR SWITCH N-CHAN 1:1 4TDFNPackaging: Cut Tape (CT) Features: Load Discharge, Slew Rate Controlled Package / Case: 4-UFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 62mOhm Input Type: Non-Inverting Voltage - Load: 1.1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.4A Ratio - Input:Output: 1:1 Supplier Device Package: 4-TDFN (1.2x1.6) Fault Protection: Reverse Current Part Status: Active |
на замовлення 13406 шт: термін постачання 21-31 дні (днів) |
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SIP32452DB-T2-GE1 | Vishay Siliconix |
Description: IC PWR SWITCH N-CHAN 1:1 4WCSPPackaging: Cut Tape (CT) Package / Case: 4-UFBGA, CSPBGA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 54mOhm Input Type: Non-Inverting Voltage - Load: 0.9V ~ 2.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.2A Ratio - Input:Output: 1:1 Supplier Device Package: 4-WCSP (0.76x0.76) Fault Protection: Reverse Current Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIP32453DB-T2-GE1 | Vishay Siliconix |
Description: IC PWR SWITCH N-CHAN 1:1 4WCSPPackaging: Cut Tape (CT) Package / Case: 4-UFBGA, CSPBGA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 54mOhm Input Type: Non-Inverting Voltage - Load: 0.9V ~ 2.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.2A Ratio - Input:Output: 1:1 Supplier Device Package: 4-WCSP (0.76x0.76) Fault Protection: Reverse Current Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIC424CD-T1-GE3 | Vishay Siliconix |
Description: IC REG DL BUCK/LNR SYNC 44MLP-28Packaging: Tape & Reel (TR) Package / Case: PowerPAK® MLP44-28 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 28V Frequency - Switching: 200kHz ~ 1MHz Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1) Supplier Device Package: PowerPAK® MLP44-28 Voltage/Current - Output 1: 0.75V ~ 5.5V, 6A Voltage/Current - Output 2: 5V, 200mA w/LED Driver: No w/Supervisor: No w/Sequencer: No Part Status: Obsolete Number of Outputs: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIP32401ADNP-T1GE4 | Vishay Siliconix |
Description: IC PWR SWITCH N-CHAN 1:1 4TDFNPackaging: Tape & Reel (TR) Features: Slew Rate Controlled Package / Case: 4-UFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 62mOhm Input Type: Non-Inverting Voltage - Load: 1.1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.4A Ratio - Input:Output: 1:1 Supplier Device Package: 4-TDFN (1.2x1.6) Fault Protection: Reverse Current Part Status: Active |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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SiP32402ADNP-T1GE4 | Vishay Siliconix |
Description: IC PWR SWITCH N-CHAN 1:1 4TDFNPackaging: Tape & Reel (TR) Features: Load Discharge, Slew Rate Controlled Package / Case: 4-UFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 62mOhm Input Type: Non-Inverting Voltage - Load: 1.1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.4A Ratio - Input:Output: 1:1 Supplier Device Package: 4-TDFN (1.2x1.6) Fault Protection: Reverse Current Part Status: Active |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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SIP32452DB-T2-GE1 | Vishay Siliconix |
Description: IC PWR SWITCH N-CHAN 1:1 4WCSPPackaging: Tape & Reel (TR) Package / Case: 4-UFBGA, CSPBGA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 54mOhm Input Type: Non-Inverting Voltage - Load: 0.9V ~ 2.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.2A Ratio - Input:Output: 1:1 Supplier Device Package: 4-WCSP (0.76x0.76) Fault Protection: Reverse Current Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIP32453DB-T2-GE1 | Vishay Siliconix |
Description: IC PWR SWITCH N-CHAN 1:1 4WCSPPackaging: Tape & Reel (TR) Package / Case: 4-UFBGA, CSPBGA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 54mOhm Input Type: Non-Inverting Voltage - Load: 0.9V ~ 2.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.2A Ratio - Input:Output: 1:1 Supplier Device Package: 4-WCSP (0.76x0.76) Fault Protection: Reverse Current Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIC417CD-T1-E3 | Vishay Siliconix |
Description: IC REG DL BUCK/LNR SYNC MLP55-32Packaging: Cut Tape (CT) Package / Case: 32-PowerVFQFN Mounting Type: Surface Mount Operating Temperature: -25°C ~ 125°C Voltage - Supply: 3V ~ 28V Frequency - Switching: 200kHz ~ 1MHz Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1) Supplier Device Package: PowerPAK® MLP55-32 Voltage/Current - Output 1: 0.5V ~ 5.5V, 10A Voltage/Current - Output 2: 0.75V ~ 5.25V, 150mA w/LED Driver: No w/Supervisor: No w/Sequencer: No Number of Outputs: 2 |
на замовлення 2116 шт: термін постачання 21-31 дні (днів) |
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SIC769ACD-T1-GE3 | Vishay Siliconix |
Description: IC CTLR PFC STAGE PPAK MLP66-40 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIC779CD-T1-GE3 | Vishay Siliconix |
Description: IC HALF BRIDGE DRIVER 40A PPAK Packaging: Cut Tape (CT) Features: Bootstrap Circuit, Diode Emulation, Status Flag Package / Case: PowerPAK® MLP66-40 Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 5.5V Applications: Synchronous Buck Converters Current - Output / Channel: 40A Technology: DrMOS Voltage - Load: 3V ~ 16V Supplier Device Package: PowerPAK® MLP66-40 Fault Protection: Over Temperature, Shoot-Through, UVLO Load Type: Inductive Part Status: Active |
на замовлення 4477 шт: термін постачання 21-31 дні (днів) |
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SIP32413DNP-T1-GE4 | Vishay Siliconix |
Description: IC PWR SWITCH N-CHAN 1:1 8TDFNPackaging: Cut Tape (CT) Features: Slew Rate Controlled Package / Case: 8-UFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 62mOhm Input Type: Non-Inverting Voltage - Load: 1.1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.4A Ratio - Input:Output: 1:1 Supplier Device Package: 8-TDFN (2x2) Fault Protection: Reverse Current Part Status: Active |
на замовлення 7399 шт: термін постачання 21-31 дні (днів) |
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SIP32414DNP-T1-GE4 | Vishay Siliconix |
Description: IC PWR SWITCH N-CHAN 1:1 8TDFNPackaging: Cut Tape (CT) Features: Load Discharge, Slew Rate Controlled Package / Case: 8-UFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 62mOhm Input Type: Non-Inverting Voltage - Load: 1.1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.4A Ratio - Input:Output: 1:1 Supplier Device Package: 8-TDFN (2x2) Fault Protection: Reverse Current Part Status: Active |
на замовлення 5780 шт: термін постачання 21-31 дні (днів) |
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SIC414CD-T1-GE3 | Vishay Siliconix |
Description: IC REG DL BUCK/LNR SYNC 28MLPQ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIP32416DNP-T1-GE4 | Vishay Siliconix |
Description: IC PWR SWITCH N-CHAN 1:1 8TDFNFeatures: Load Discharge, Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 62mOhm Input Type: Non-Inverting Voltage - Load: 1.1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.4A Ratio - Input:Output: 1:1 Supplier Device Package: 8-TDFN (2x2) Fault Protection: Reverse Current Part Status: Active |
на замовлення 2206 шт: термін постачання 21-31 дні (днів) |
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SIC401ACD-T1-GE3 | Vishay Siliconix |
Description: IC REG DL BUCK/LNR SYNC MLP55-32Packaging: Cut Tape (CT) Package / Case: 32-PowerVFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 17V Frequency - Switching: 200kHz ~ 1MHz Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1) Supplier Device Package: PowerPAK® MLP55-32 Voltage/Current - Output 1: 0.6V ~ 5.5V, 15A Voltage/Current - Output 2: Adj to 0.75V, 200mA w/LED Driver: No w/Supervisor: No w/Sequencer: No Number of Outputs: 2 |
на замовлення 11783 шт: термін постачання 21-31 дні (днів) |
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SIC402ACD-T1-GE3 | Vishay Siliconix |
Description: IC REG DL BUCK/LNR SYNC MLP55-32Packaging: Cut Tape (CT) Package / Case: 32-PowerVFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 28V Frequency - Switching: 200kHz ~ 1MHz Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1) Supplier Device Package: PowerPAK® MLP55-32 Voltage/Current - Output 1: 0.6V ~ 5.5V, 10A Voltage/Current - Output 2: Adj to 0.75V, 200mA w/LED Driver: No w/Supervisor: No w/Sequencer: No Number of Outputs: 2 |
на замовлення 13387 шт: термін постачання 21-31 дні (днів) |
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SIC402BCD-T1-GE3 | Vishay Siliconix |
Description: IC REG DL BUCK/LNR SYNC MLP55-32Packaging: Cut Tape (CT) Package / Case: 32-PowerVFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 28V Frequency - Switching: 200kHz ~ 1MHz Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1) Supplier Device Package: PowerPAK® MLP55-32 Voltage/Current - Output 1: 0.6V ~ 5.5V, 10A Voltage/Current - Output 2: Adj to 0.75V, 200mA w/LED Driver: No w/Supervisor: No w/Sequencer: No Number of Outputs: 2 |
на замовлення 17210 шт: термін постачання 21-31 дні (днів) |
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SIC403CD-T1-GE3 | Vishay Siliconix |
Description: IC REG DL BUCK/LNR SYNC MLP55-32 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIP32416DNP-T1-GE4 | Vishay Siliconix |
Description: IC PWR SWITCH N-CHAN 1:1 8TDFNFeatures: Load Discharge, Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 62mOhm Input Type: Non-Inverting Voltage - Load: 1.1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.4A Ratio - Input:Output: 1:1 Supplier Device Package: 8-TDFN (2x2) Fault Protection: Reverse Current Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIC401ACD-T1-GE3 | Vishay Siliconix |
Description: IC REG DL BUCK/LNR SYNC MLP55-32Packaging: Tape & Reel (TR) Package / Case: 32-PowerVFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 17V Frequency - Switching: 200kHz ~ 1MHz Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1) Supplier Device Package: PowerPAK® MLP55-32 Voltage/Current - Output 1: 0.6V ~ 5.5V, 15A Voltage/Current - Output 2: Adj to 0.75V, 200mA w/LED Driver: No w/Supervisor: No w/Sequencer: No Number of Outputs: 2 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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SIC402ACD-T1-GE3 | Vishay Siliconix |
Description: IC REG DL BUCK/LNR SYNC MLP55-32Packaging: Tape & Reel (TR) Package / Case: 32-PowerVFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 28V Frequency - Switching: 200kHz ~ 1MHz Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1) Supplier Device Package: PowerPAK® MLP55-32 Voltage/Current - Output 1: 0.6V ~ 5.5V, 10A Voltage/Current - Output 2: Adj to 0.75V, 200mA w/LED Driver: No w/Supervisor: No w/Sequencer: No Number of Outputs: 2 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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SIC402BCD-T1-GE3 | Vishay Siliconix |
Description: IC REG DL BUCK/LNR SYNC MLP55-32Packaging: Tape & Reel (TR) Package / Case: 32-PowerVFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 28V Frequency - Switching: 200kHz ~ 1MHz Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1) Supplier Device Package: PowerPAK® MLP55-32 Voltage/Current - Output 1: 0.6V ~ 5.5V, 10A Voltage/Current - Output 2: Adj to 0.75V, 200mA w/LED Driver: No w/Supervisor: No w/Sequencer: No Number of Outputs: 2 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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SIC403CD-T1-GE3 | Vishay Siliconix |
Description: IC REG DL BUCK/LNR SYNC MLP55-32 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIZ902DT-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 16A 8POWERPAIRPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 29W, 66W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) |
на замовлення 1922 шт: термін постачання 21-31 дні (днів) |
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SIZ910DT-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 40A 8POWERPAIRPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 48W, 100W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIZ902DT-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 16A 8POWERPAIRPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 29W, 66W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIZ910DT-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 40A 8POWERPAIRPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 48W, 100W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI9410BDY-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 6.2A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 8.1A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI8497DB-T2-E1 | Vishay Siliconix |
Description: MOSFET P-CH 30V 13A 6MICROFOOT |
на замовлення 3713 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SI8497DB-T2-E1 | Vishay Siliconix |
Description: MOSFET P-CH 30V 13A 6MICROFOOT |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SIR812DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 60A PPAK SO-8Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.45mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10240 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. |
| SQ1431EH-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 3A SC70
Description: MOSFET P-CH 30V 3A SC70
на замовлення 906 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SQ1470EH-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 2.8A SC70
Description: MOSFET N-CH 30V 2.8A SC70
товару немає в наявності
В кошику
од. на суму грн.
| SQ3456BEV-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 7.8A 6TSOP
Description: MOSFET N-CH 30V 7.8A 6TSOP
на замовлення 10 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SQ3460EV-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 8A 6TSOP
Description: MOSFET N-CH 20V 8A 6TSOP
на замовлення 541 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SQ2360EES-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 4.4A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Description: MOSFET N-CH 60V 4.4A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| SQ3442EV-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 4.3A 6TSOP
Description: MOSFET N-CH 20V 4.3A 6TSOP
на замовлення 5 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SQ1421EDH-T1_GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 1.6A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 2A, 10V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 25 V
Description: MOSFET P-CH 60V 1.6A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 2A, 10V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| SQ2361EES-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 2.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.4A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 30 V
Description: MOSFET P-CH 60V 2.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.4A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| SQ3427EEV-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 5.5A 6TSOP
Description: MOSFET P-CH 60V 5.5A 6TSOP
товару немає в наявності
В кошику
од. на суму грн.
| SQ3419EEV-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 7.4A 6TSOP
Description: MOSFET P-CH 40V 7.4A 6TSOP
товару немає в наявності
В кошику
од. на суму грн.
| SQ3418EEV-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 8A 6TSOP
Description: MOSFET N-CH 40V 8A 6TSOP
товару немає в наявності
В кошику
од. на суму грн.
| SQ3426EEV-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 7A 6TSOP
Description: MOSFET N-CH 60V 7A 6TSOP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SQ1431EH-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 3A SC70
Description: MOSFET P-CH 30V 3A SC70
товару немає в наявності
В кошику
од. на суму грн.
| SQ1470EH-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 2.8A SC70
Description: MOSFET N-CH 30V 2.8A SC70
товару немає в наявності
В кошику
од. на суму грн.
| SQ3456BEV-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 7.8A 6TSOP
Description: MOSFET N-CH 30V 7.8A 6TSOP
товару немає в наявності
В кошику
од. на суму грн.
| SQ3460EV-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 8A 6TSOP
Description: MOSFET N-CH 20V 8A 6TSOP
товару немає в наявності
В кошику
од. на суму грн.
| SIR878ADP-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 40A PPAK SO-8
Description: MOSFET N-CH 100V 40A PPAK SO-8
товару немає в наявності
В кошику
од. на суму грн.
| SIR826DP-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET N-CH 80V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
Description: MOSFET N-CH 80V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
на замовлення 2013 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 282.54 грн |
| 10+ | 177.79 грн |
| 100+ | 124.20 грн |
| 500+ | 95.11 грн |
| 1000+ | 88.22 грн |
| SIR878ADP-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 40A PPAK SO-8
Description: MOSFET N-CH 100V 40A PPAK SO-8
на замовлення 1581 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SIR878ADP-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 40A PPAK SO-8
Description: MOSFET N-CH 100V 40A PPAK SO-8
на замовлення 1581 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SIR870ADP-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2866 pF @ 50 V
Description: MOSFET N-CH 100V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2866 pF @ 50 V
на замовлення 10732 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 179.65 грн |
| 10+ | 121.10 грн |
| 100+ | 84.88 грн |
| 500+ | 65.38 грн |
| SIR882ADP-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 50 V
Description: MOSFET N-CH 100V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 50 V
на замовлення 7634 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 201.70 грн |
| 10+ | 135.41 грн |
| 100+ | 98.26 грн |
| 500+ | 78.41 грн |
| SIHB22N60E-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
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В кошику
од. на суму грн.
| SIHB30N60E-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 29A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Description: MOSFET N-CH 600V 29A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
на замовлення 515 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 444.23 грн |
| 50+ | 242.26 грн |
| 100+ | 238.50 грн |
| 500+ | 174.69 грн |
| SIR826DP-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 80V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
Description: MOSFET N-CH 80V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
| SIR870ADP-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2866 pF @ 50 V
Description: MOSFET N-CH 100V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2866 pF @ 50 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 59.10 грн |
| SIR882ADP-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 50 V
Description: MOSFET N-CH 100V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 50 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 72.04 грн |
| SIP32401ADNP-T1GE4 |
![]() |
Виробник: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
на замовлення 18309 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 39.20 грн |
| 12+ | 26.66 грн |
| 25+ | 23.84 грн |
| 100+ | 19.49 грн |
| 250+ | 18.11 грн |
| 500+ | 17.28 грн |
| 1000+ | 16.32 грн |
| SiP32402ADNP-T1GE4 |
![]() |
Виробник: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
на замовлення 13406 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 39.20 грн |
| 12+ | 26.66 грн |
| 25+ | 23.84 грн |
| 100+ | 19.49 грн |
| 250+ | 18.11 грн |
| 500+ | 17.28 грн |
| 1000+ | 16.32 грн |
| SIP32452DB-T2-GE1 |
![]() |
Виробник: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 54mOhm
Input Type: Non-Inverting
Voltage - Load: 0.9V ~ 2.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 54mOhm
Input Type: Non-Inverting
Voltage - Load: 0.9V ~ 2.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| SIP32453DB-T2-GE1 |
![]() |
Виробник: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 54mOhm
Input Type: Non-Inverting
Voltage - Load: 0.9V ~ 2.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 54mOhm
Input Type: Non-Inverting
Voltage - Load: 0.9V ~ 2.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| SIC424CD-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: IC REG DL BUCK/LNR SYNC 44MLP-28
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP44-28
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 28V
Frequency - Switching: 200kHz ~ 1MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: PowerPAK® MLP44-28
Voltage/Current - Output 1: 0.75V ~ 5.5V, 6A
Voltage/Current - Output 2: 5V, 200mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Part Status: Obsolete
Number of Outputs: 2
Description: IC REG DL BUCK/LNR SYNC 44MLP-28
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP44-28
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 28V
Frequency - Switching: 200kHz ~ 1MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: PowerPAK® MLP44-28
Voltage/Current - Output 1: 0.75V ~ 5.5V, 6A
Voltage/Current - Output 2: 5V, 200mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Part Status: Obsolete
Number of Outputs: 2
товару немає в наявності
В кошику
од. на суму грн.
| SIP32401ADNP-T1GE4 |
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Виробник: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 17.43 грн |
| 6000+ | 16.34 грн |
| 9000+ | 16.12 грн |
| 15000+ | 14.90 грн |
| SiP32402ADNP-T1GE4 |
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Виробник: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 17.43 грн |
| 6000+ | 16.34 грн |
| 9000+ | 16.12 грн |
| SIP32452DB-T2-GE1 |
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Виробник: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 54mOhm
Input Type: Non-Inverting
Voltage - Load: 0.9V ~ 2.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 54mOhm
Input Type: Non-Inverting
Voltage - Load: 0.9V ~ 2.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
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од. на суму грн.
| SIP32453DB-T2-GE1 |
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Виробник: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 54mOhm
Input Type: Non-Inverting
Voltage - Load: 0.9V ~ 2.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 54mOhm
Input Type: Non-Inverting
Voltage - Load: 0.9V ~ 2.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| SIC417CD-T1-E3 |
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Виробник: Vishay Siliconix
Description: IC REG DL BUCK/LNR SYNC MLP55-32
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 3V ~ 28V
Frequency - Switching: 200kHz ~ 1MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: PowerPAK® MLP55-32
Voltage/Current - Output 1: 0.5V ~ 5.5V, 10A
Voltage/Current - Output 2: 0.75V ~ 5.25V, 150mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
Description: IC REG DL BUCK/LNR SYNC MLP55-32
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 3V ~ 28V
Frequency - Switching: 200kHz ~ 1MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: PowerPAK® MLP55-32
Voltage/Current - Output 1: 0.5V ~ 5.5V, 10A
Voltage/Current - Output 2: 0.75V ~ 5.25V, 150mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
на замовлення 2116 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 276.01 грн |
| 10+ | 199.50 грн |
| 25+ | 183.13 грн |
| 100+ | 154.96 грн |
| 250+ | 146.90 грн |
| 500+ | 142.03 грн |
| 1000+ | 135.77 грн |
| SIC769ACD-T1-GE3 |
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Виробник: Vishay Siliconix
Description: IC CTLR PFC STAGE PPAK MLP66-40
Description: IC CTLR PFC STAGE PPAK MLP66-40
товару немає в наявності
В кошику
од. на суму грн.
| SIC779CD-T1-GE3 |
Виробник: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 40A PPAK
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: PowerPAK® MLP66-40
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 40A
Technology: DrMOS
Voltage - Load: 3V ~ 16V
Supplier Device Package: PowerPAK® MLP66-40
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 40A PPAK
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: PowerPAK® MLP66-40
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 40A
Technology: DrMOS
Voltage - Load: 3V ~ 16V
Supplier Device Package: PowerPAK® MLP66-40
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
на замовлення 4477 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 188.63 грн |
| 10+ | 163.09 грн |
| 25+ | 153.87 грн |
| 100+ | 123.03 грн |
| 250+ | 115.52 грн |
| 500+ | 101.08 грн |
| 1000+ | 82.38 грн |
| SIP32413DNP-T1-GE4 |
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Виробник: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 8TDFN
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 8-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-TDFN (2x2)
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 8TDFN
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 8-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-TDFN (2x2)
Fault Protection: Reverse Current
Part Status: Active
на замовлення 7399 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 104.52 грн |
| 10+ | 63.30 грн |
| 25+ | 53.41 грн |
| 100+ | 39.63 грн |
| 250+ | 34.49 грн |
| 500+ | 31.34 грн |
| 1000+ | 28.25 грн |
| SIP32414DNP-T1-GE4 |
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Виробник: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 8TDFN
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 8-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-TDFN (2x2)
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 8TDFN
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 8-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-TDFN (2x2)
Fault Protection: Reverse Current
Part Status: Active
на замовлення 5780 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 52.26 грн |
| 10+ | 35.94 грн |
| 25+ | 32.30 грн |
| 100+ | 26.55 грн |
| 250+ | 24.75 грн |
| 500+ | 23.68 грн |
| 1000+ | 22.41 грн |
| SIC414CD-T1-GE3 |
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Виробник: Vishay Siliconix
Description: IC REG DL BUCK/LNR SYNC 28MLPQ
Description: IC REG DL BUCK/LNR SYNC 28MLPQ
товару немає в наявності
В кошику
од. на суму грн.
| SIP32416DNP-T1-GE4 |
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Виробник: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 8TDFN
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-TDFN (2x2)
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 8TDFN
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-TDFN (2x2)
Fault Protection: Reverse Current
Part Status: Active
на замовлення 2206 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 52.26 грн |
| 10+ | 35.94 грн |
| 25+ | 32.30 грн |
| 100+ | 26.55 грн |
| 250+ | 24.75 грн |
| 500+ | 23.68 грн |
| 1000+ | 22.41 грн |
| SIC401ACD-T1-GE3 |
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Виробник: Vishay Siliconix
Description: IC REG DL BUCK/LNR SYNC MLP55-32
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 17V
Frequency - Switching: 200kHz ~ 1MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: PowerPAK® MLP55-32
Voltage/Current - Output 1: 0.6V ~ 5.5V, 15A
Voltage/Current - Output 2: Adj to 0.75V, 200mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
Description: IC REG DL BUCK/LNR SYNC MLP55-32
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 17V
Frequency - Switching: 200kHz ~ 1MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: PowerPAK® MLP55-32
Voltage/Current - Output 1: 0.6V ~ 5.5V, 15A
Voltage/Current - Output 2: Adj to 0.75V, 200mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
на замовлення 11783 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 142.09 грн |
| 10+ | 100.97 грн |
| 25+ | 91.94 грн |
| 100+ | 76.93 грн |
| 250+ | 72.47 грн |
| 500+ | 69.79 грн |
| 1000+ | 66.47 грн |
| SIC402ACD-T1-GE3 |
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Виробник: Vishay Siliconix
Description: IC REG DL BUCK/LNR SYNC MLP55-32
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 28V
Frequency - Switching: 200kHz ~ 1MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: PowerPAK® MLP55-32
Voltage/Current - Output 1: 0.6V ~ 5.5V, 10A
Voltage/Current - Output 2: Adj to 0.75V, 200mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
Description: IC REG DL BUCK/LNR SYNC MLP55-32
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 28V
Frequency - Switching: 200kHz ~ 1MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: PowerPAK® MLP55-32
Voltage/Current - Output 1: 0.6V ~ 5.5V, 10A
Voltage/Current - Output 2: Adj to 0.75V, 200mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
на замовлення 13387 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 142.90 грн |
| 10+ | 101.20 грн |
| 25+ | 92.07 грн |
| 100+ | 77.00 грн |
| 250+ | 72.52 грн |
| 500+ | 69.82 грн |
| 1000+ | 66.48 грн |
| SIC402BCD-T1-GE3 |
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Виробник: Vishay Siliconix
Description: IC REG DL BUCK/LNR SYNC MLP55-32
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 28V
Frequency - Switching: 200kHz ~ 1MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: PowerPAK® MLP55-32
Voltage/Current - Output 1: 0.6V ~ 5.5V, 10A
Voltage/Current - Output 2: Adj to 0.75V, 200mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
Description: IC REG DL BUCK/LNR SYNC MLP55-32
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 28V
Frequency - Switching: 200kHz ~ 1MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: PowerPAK® MLP55-32
Voltage/Current - Output 1: 0.6V ~ 5.5V, 10A
Voltage/Current - Output 2: Adj to 0.75V, 200mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
на замовлення 17210 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 142.90 грн |
| 10+ | 101.20 грн |
| 25+ | 92.07 грн |
| 100+ | 77.00 грн |
| 250+ | 72.52 грн |
| 500+ | 69.82 грн |
| 1000+ | 66.48 грн |
| SIC403CD-T1-GE3 |
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Виробник: Vishay Siliconix
Description: IC REG DL BUCK/LNR SYNC MLP55-32
Description: IC REG DL BUCK/LNR SYNC MLP55-32
товару немає в наявності
В кошику
од. на суму грн.
| SIP32416DNP-T1-GE4 |
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Виробник: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 8TDFN
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-TDFN (2x2)
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 8TDFN
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-TDFN (2x2)
Fault Protection: Reverse Current
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| SIC401ACD-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: IC REG DL BUCK/LNR SYNC MLP55-32
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 17V
Frequency - Switching: 200kHz ~ 1MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: PowerPAK® MLP55-32
Voltage/Current - Output 1: 0.6V ~ 5.5V, 15A
Voltage/Current - Output 2: Adj to 0.75V, 200mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
Description: IC REG DL BUCK/LNR SYNC MLP55-32
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 17V
Frequency - Switching: 200kHz ~ 1MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: PowerPAK® MLP55-32
Voltage/Current - Output 1: 0.6V ~ 5.5V, 15A
Voltage/Current - Output 2: Adj to 0.75V, 200mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 71.76 грн |
| 6000+ | 67.67 грн |
| 9000+ | 66.96 грн |
| SIC402ACD-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: IC REG DL BUCK/LNR SYNC MLP55-32
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 28V
Frequency - Switching: 200kHz ~ 1MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: PowerPAK® MLP55-32
Voltage/Current - Output 1: 0.6V ~ 5.5V, 10A
Voltage/Current - Output 2: Adj to 0.75V, 200mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
Description: IC REG DL BUCK/LNR SYNC MLP55-32
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 28V
Frequency - Switching: 200kHz ~ 1MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: PowerPAK® MLP55-32
Voltage/Current - Output 1: 0.6V ~ 5.5V, 10A
Voltage/Current - Output 2: Adj to 0.75V, 200mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 64.91 грн |
| SIC402BCD-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: IC REG DL BUCK/LNR SYNC MLP55-32
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 28V
Frequency - Switching: 200kHz ~ 1MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: PowerPAK® MLP55-32
Voltage/Current - Output 1: 0.6V ~ 5.5V, 10A
Voltage/Current - Output 2: Adj to 0.75V, 200mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
Description: IC REG DL BUCK/LNR SYNC MLP55-32
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 28V
Frequency - Switching: 200kHz ~ 1MHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: PowerPAK® MLP55-32
Voltage/Current - Output 1: 0.6V ~ 5.5V, 10A
Voltage/Current - Output 2: Adj to 0.75V, 200mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 71.75 грн |
| 6000+ | 67.66 грн |
| 9000+ | 66.95 грн |
| SIC403CD-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: IC REG DL BUCK/LNR SYNC MLP55-32
Description: IC REG DL BUCK/LNR SYNC MLP55-32
товару немає в наявності
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од. на суму грн.
| SIZ902DT-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16A 8POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 29W, 66W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Description: MOSFET 2N-CH 30V 16A 8POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 29W, 66W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
на замовлення 1922 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 142.09 грн |
| 10+ | 87.60 грн |
| 100+ | 59.23 грн |
| 500+ | 44.18 грн |
| 1000+ | 41.65 грн |
| SIZ910DT-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 40A 8POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W, 100W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Description: MOSFET 2N-CH 30V 40A 8POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W, 100W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
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од. на суму грн.
| SIZ902DT-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16A 8POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 29W, 66W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Description: MOSFET 2N-CH 30V 16A 8POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 29W, 66W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
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од. на суму грн.
| SIZ910DT-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 40A 8POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W, 100W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Description: MOSFET 2N-CH 30V 40A 8POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W, 100W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
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| SI9410BDY-T1-E3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 6.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.1A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Description: MOSFET N-CH 30V 6.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.1A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
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| SI8497DB-T2-E1 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 13A 6MICROFOOT
Description: MOSFET P-CH 30V 13A 6MICROFOOT
на замовлення 3713 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SI8497DB-T2-E1 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 13A 6MICROFOOT
Description: MOSFET P-CH 30V 13A 6MICROFOOT
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SIR812DP-T1-GE3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10240 pF @ 15 V
Description: MOSFET N-CH 30V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10240 pF @ 15 V
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