Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BXS050N08P | BRIDGELUX | BXS050N08P THT N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXS050N10BP | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXS050N10BP | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Mounting: THT Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXS050N10D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXS050N10D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Mounting: SMD Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXS055N08P | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Case: TO220 Gate-source voltage: ±20V Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXS055N08P | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Case: TO220 Gate-source voltage: ±20V Mounting: THT Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXS075N10C | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 79A; Idm: 600A; 78W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 79A Pulsed drain current: 600A Power dissipation: 78W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXS075N10C | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 79A; Idm: 600A; 78W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 79A Pulsed drain current: 600A Power dissipation: 78W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXS080N10C | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 79A; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 79A Case: PDFN56 Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXS080N10C | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 79A; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 79A Case: PDFN56 Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXS105N10B | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 3.5W; SOP8 Case: SOP8 Polarisation: unipolar Kind of channel: enhancement Gate charge: 71nC On-state resistance: 10.5mΩ Power dissipation: 3.5W Drain current: 14A Gate-source voltage: ±20V Pulsed drain current: 56A Drain-source voltage: 100V Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXS105N10B | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 3.5W; SOP8 Case: SOP8 Polarisation: unipolar Kind of channel: enhancement Gate charge: 71nC On-state resistance: 10.5mΩ Power dissipation: 3.5W Drain current: 14A Gate-source voltage: ±20V Pulsed drain current: 56A Drain-source voltage: 100V Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXS1100N25E | BRIDGELUX | BXS1100N25E SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BXS1150N10M | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.6A Pulsed drain current: 15.6A Power dissipation: 2.5W Case: SOT23-3 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 16.3nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 10819 шт: термін постачання 21-30 дні (днів) |
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BXS1150N10M | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.6A Pulsed drain current: 15.6A Power dissipation: 2.5W Case: SOT23-3 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 16.3nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 10819 шт: термін постачання 14-21 дні (днів) |
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BXS130N10C | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 208A; 57W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 52A Pulsed drain current: 208A Power dissipation: 57W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXS130N10C | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 208A; 57W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 52A Pulsed drain current: 208A Power dissipation: 57W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXS160N10C | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXS160N10C | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Mounting: SMD Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BXS230N10B | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Mounting: SMD Kind of channel: enhancement |
на замовлення 1611 шт: термін постачання 21-30 дні (днів) |
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BXS230N10B | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Mounting: SMD Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 1611 шт: термін постачання 14-21 дні (днів) |
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BXS900N10D | BRIDGELUX | BXS900N10D SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXT020N03C | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 130A; Idm: 520A; 120W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 130A Pulsed drain current: 520A Power dissipation: 120W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 54nC Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXT020N03C | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 130A; Idm: 520A; 120W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 130A Pulsed drain current: 520A Power dissipation: 120W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 54nC Kind of package: reel Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXT030N03C | BRIDGELUX | BXT030N03C SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXT033N03D | BRIDGELUX | BXT033N03D SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXT040N03C | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 80A; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXT040N03C | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 80A; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXT040P04M | BRIDGELUX | BXT040P04M SMD P channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXT047N03E | BRIDGELUX | BXT047N03E SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXT060N03B | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 80A; 4.5W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Power dissipation: 4.5W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel Kind of channel: enhancement Pulsed drain current: 80A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXT060N03B | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 80A; 4.5W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Power dissipation: 4.5W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel Kind of channel: enhancement Pulsed drain current: 80A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXT070N06D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 108W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 108W Case: TO252 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 88nC Kind of package: reel Kind of channel: enhancement Pulsed drain current: 320A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXT070N06D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 108W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 108W Case: TO252 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 88nC Kind of package: reel Kind of channel: enhancement Pulsed drain current: 320A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXT071N04E | BRIDGELUX | BXT071N04E SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXT080N03E | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 120A; 12W; PDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Pulsed drain current: 120A Power dissipation: 12W Case: PDFN8 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 13.2nC Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXT080N03E | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 120A; 12W; PDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Pulsed drain current: 120A Power dissipation: 12W Case: PDFN8 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 13.2nC Kind of package: reel Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXT080N06D | BRIDGELUX | BXT080N06D SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BXT090N06B | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 68A; 4.8W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 4.8W Case: SOP8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 99nC On-state resistance: 12mΩ Drain current: 11A Pulsed drain current: 68A Drain-source voltage: 60V Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BXT090N06B | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 68A; 4.8W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 4.8W Case: SOP8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 99nC On-state resistance: 12mΩ Drain current: 11A Pulsed drain current: 68A Drain-source voltage: 60V Gate-source voltage: ±20V кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
BXT1000N06D | BRIDGELUX | BXT1000N06D SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BXT1000N06M | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3 Case: SOT23-3 Mounting: SMD Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET Drain-source voltage: 60V Drain current: 2A Gate charge: 5.2nC On-state resistance: 0.11Ω Power dissipation: 1.5W Pulsed drain current: 12A Gate-source voltage: ±20V Kind of package: reel; tape |
на замовлення 1401 шт: термін постачання 21-30 дні (днів) |
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BXT1000N06M | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3 Case: SOT23-3 Mounting: SMD Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET Drain-source voltage: 60V Drain current: 2A Gate charge: 5.2nC On-state resistance: 0.11Ω Power dissipation: 1.5W Pulsed drain current: 12A Gate-source voltage: ±20V Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 1401 шт: термін постачання 14-21 дні (днів) |
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BXT1000N06N | BRIDGELUX | BXT1000N06N SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXT1080P06B | BRIDGELUX | BXT1080P06B SMD P channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXT1100P02M | BRIDGELUX | BXT1100P02M SMD P channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXT110P03E | BRIDGELUX | BXT110P03E SMD P channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BXT1150N10D | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 12.8A Pulsed drain current: 64A Power dissipation: 78W Case: TO252 Gate-source voltage: ±20V On-state resistance: 135mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 4404 шт: термін постачання 21-30 дні (днів) |
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BXT1150N10D | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 12.8A Pulsed drain current: 64A Power dissipation: 78W Case: TO252 Gate-source voltage: ±20V On-state resistance: 135mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 4404 шт: термін постачання 14-21 дні (днів) |
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BXT1150N10J | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 5.6A Pulsed drain current: 32A Power dissipation: 2W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 135mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BXT1150N10J | BRIDGELUX |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 5.6A Pulsed drain current: 32A Power dissipation: 2W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 135mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BXT1700P06M | BRIDGELUX |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W Kind of channel: enhancement Case: SOT23-3 Type of transistor: P-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: -60V Pulsed drain current: -16A Drain current: -2.8A Gate charge: 22nC On-state resistance: 0.17Ω Power dissipation: 1.5W Gate-source voltage: ±20V |
на замовлення 2946 шт: термін постачання 21-30 дні (днів) |
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BXT1700P06M | BRIDGELUX |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W Kind of channel: enhancement Case: SOT23-3 Type of transistor: P-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: -60V Pulsed drain current: -16A Drain current: -2.8A Gate charge: 22nC On-state resistance: 0.17Ω Power dissipation: 1.5W Gate-source voltage: ±20V кількість в упаковці: 1 шт |
на замовлення 2946 шт: термін постачання 14-21 дні (днів) |
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BXT170N06D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 200A; 94W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 33A Power dissipation: 94W Case: TO252 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 200A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BXT170N06D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 200A; 94W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 33A Power dissipation: 94W Case: TO252 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 200A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BXT210N02M | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel Mounting: SMD Polarisation: unipolar Gate charge: 12.1nC On-state resistance: 21mΩ Power dissipation: 1.6W Drain current: 6.8A Gate-source voltage: ±12V Drain-source voltage: 20V Pulsed drain current: 27.2A Case: SOT23 |
на замовлення 11939 шт: термін постачання 21-30 дні (днів) |
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BXT210N02M | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel Mounting: SMD Polarisation: unipolar Gate charge: 12.1nC On-state resistance: 21mΩ Power dissipation: 1.6W Drain current: 6.8A Gate-source voltage: ±12V Drain-source voltage: 20V Pulsed drain current: 27.2A Case: SOT23 кількість в упаковці: 1 шт |
на замовлення 11939 шт: термін постачання 14-21 дні (днів) |
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BXT230P03B | BRIDGELUX |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -7A Pulsed drain current: -40A Power dissipation: 3.9W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1994 шт: термін постачання 21-30 дні (днів) |
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BXT230P03B | BRIDGELUX |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -7A Pulsed drain current: -40A Power dissipation: 3.9W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 1994 шт: термін постачання 14-21 дні (днів) |
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BXS050N08P |
Виробник: BRIDGELUX
BXS050N08P THT N channel transistors
BXS050N08P THT N channel transistors
товару немає в наявності
В кошику
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BXS050N10BP |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
BXS050N10BP |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: THT
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: THT
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
BXS050N10D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
BXS050N10D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: SMD
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: SMD
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
BXS055N08P |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
BXS055N08P |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
BXS075N10C |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 79A; Idm: 600A; 78W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 79A
Pulsed drain current: 600A
Power dissipation: 78W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 79A; Idm: 600A; 78W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 79A
Pulsed drain current: 600A
Power dissipation: 78W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
BXS075N10C |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 79A; Idm: 600A; 78W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 79A
Pulsed drain current: 600A
Power dissipation: 78W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 79A; Idm: 600A; 78W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 79A
Pulsed drain current: 600A
Power dissipation: 78W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
BXS080N10C |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 79A; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 79A
Case: PDFN56
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 79A; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 79A
Case: PDFN56
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
BXS080N10C |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 79A; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 79A
Case: PDFN56
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 79A; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 79A
Case: PDFN56
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
BXS105N10B |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 3.5W; SOP8
Case: SOP8
Polarisation: unipolar
Kind of channel: enhancement
Gate charge: 71nC
On-state resistance: 10.5mΩ
Power dissipation: 3.5W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 56A
Drain-source voltage: 100V
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 3.5W; SOP8
Case: SOP8
Polarisation: unipolar
Kind of channel: enhancement
Gate charge: 71nC
On-state resistance: 10.5mΩ
Power dissipation: 3.5W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 56A
Drain-source voltage: 100V
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel
товару немає в наявності
В кошику
од. на суму грн.
BXS105N10B |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 3.5W; SOP8
Case: SOP8
Polarisation: unipolar
Kind of channel: enhancement
Gate charge: 71nC
On-state resistance: 10.5mΩ
Power dissipation: 3.5W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 56A
Drain-source voltage: 100V
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 3.5W; SOP8
Case: SOP8
Polarisation: unipolar
Kind of channel: enhancement
Gate charge: 71nC
On-state resistance: 10.5mΩ
Power dissipation: 3.5W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 56A
Drain-source voltage: 100V
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
BXS1100N25E |
Виробник: BRIDGELUX
BXS1100N25E SMD N channel transistors
BXS1100N25E SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
BXS1150N10M |
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Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Pulsed drain current: 15.6A
Power dissipation: 2.5W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Pulsed drain current: 15.6A
Power dissipation: 2.5W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 10819 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 31.46 грн |
27+ | 14.69 грн |
39+ | 10.30 грн |
100+ | 7.34 грн |
250+ | 3.67 грн |
431+ | 2.15 грн |
1186+ | 2.03 грн |
BXS1150N10M |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Pulsed drain current: 15.6A
Power dissipation: 2.5W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Pulsed drain current: 15.6A
Power dissipation: 2.5W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 10819 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
9+ | 37.75 грн |
17+ | 18.30 грн |
25+ | 12.36 грн |
100+ | 8.80 грн |
250+ | 4.41 грн |
431+ | 2.58 грн |
1186+ | 2.43 грн |
BXS130N10C |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 208A; 57W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 208A
Power dissipation: 57W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 208A; 57W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 208A
Power dissipation: 57W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
BXS130N10C |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 208A; 57W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 208A
Power dissipation: 57W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 208A; 57W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 208A
Power dissipation: 57W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
BXS160N10C |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
BXS160N10C |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: SMD
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: SMD
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
BXS230N10B |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: SMD
Kind of channel: enhancement
на замовлення 1611 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 30.61 грн |
18+ | 23.06 грн |
27+ | 14.84 грн |
100+ | 10.74 грн |
114+ | 8.21 грн |
312+ | 7.74 грн |
BXS230N10B |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: SMD
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: SMD
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 1611 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
9+ | 36.73 грн |
11+ | 28.73 грн |
25+ | 17.81 грн |
100+ | 12.89 грн |
114+ | 9.85 грн |
312+ | 9.29 грн |
2000+ | 8.91 грн |
BXS900N10D |
Виробник: BRIDGELUX
BXS900N10D SMD N channel transistors
BXS900N10D SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
BXT020N03C |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 130A; Idm: 520A; 120W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 120W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 130A; Idm: 520A; 120W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 120W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel
Kind of channel: enhancement
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BXT020N03C |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 130A; Idm: 520A; 120W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 120W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 130A; Idm: 520A; 120W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 120W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
BXT030N03C |
Виробник: BRIDGELUX
BXT030N03C SMD N channel transistors
BXT030N03C SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
BXT033N03D |
Виробник: BRIDGELUX
BXT033N03D SMD N channel transistors
BXT033N03D SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
BXT040N03C |
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Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
BXT040N03C |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
BXT040P04M |
Виробник: BRIDGELUX
BXT040P04M SMD P channel transistors
BXT040P04M SMD P channel transistors
товару немає в наявності
В кошику
од. на суму грн.
BXT047N03E |
Виробник: BRIDGELUX
BXT047N03E SMD N channel transistors
BXT047N03E SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
BXT060N03B |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 80A; 4.5W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 4.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 80A; 4.5W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 4.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 80A
товару немає в наявності
В кошику
од. на суму грн.
BXT060N03B |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 80A; 4.5W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 4.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 80A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 80A; 4.5W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 4.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 80A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
BXT070N06D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 108W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 108W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 320A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 108W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 108W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 320A
товару немає в наявності
В кошику
од. на суму грн.
BXT070N06D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 108W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 108W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 320A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 108W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 108W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 320A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
BXT071N04E |
Виробник: BRIDGELUX
BXT071N04E SMD N channel transistors
BXT071N04E SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
BXT080N03E |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 120A; 12W; PDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 12W
Case: PDFN8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 120A; 12W; PDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 12W
Case: PDFN8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
BXT080N03E |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 120A; 12W; PDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 12W
Case: PDFN8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 120A; 12W; PDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 12W
Case: PDFN8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
BXT080N06D |
Виробник: BRIDGELUX
BXT080N06D SMD N channel transistors
BXT080N06D SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
BXT090N06B |
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Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 68A; 4.8W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 4.8W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 99nC
On-state resistance: 12mΩ
Drain current: 11A
Pulsed drain current: 68A
Drain-source voltage: 60V
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 68A; 4.8W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 4.8W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 99nC
On-state resistance: 12mΩ
Drain current: 11A
Pulsed drain current: 68A
Drain-source voltage: 60V
Gate-source voltage: ±20V
товару немає в наявності
В кошику
од. на суму грн.
BXT090N06B |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 68A; 4.8W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 4.8W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 99nC
On-state resistance: 12mΩ
Drain current: 11A
Pulsed drain current: 68A
Drain-source voltage: 60V
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 68A; 4.8W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 4.8W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 99nC
On-state resistance: 12mΩ
Drain current: 11A
Pulsed drain current: 68A
Drain-source voltage: 60V
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
BXT1000N06D |
Виробник: BRIDGELUX
BXT1000N06D SMD N channel transistors
BXT1000N06D SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
BXT1000N06M |
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Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3
Case: SOT23-3
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 2A
Gate charge: 5.2nC
On-state resistance: 0.11Ω
Power dissipation: 1.5W
Pulsed drain current: 12A
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3
Case: SOT23-3
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 2A
Gate charge: 5.2nC
On-state resistance: 0.11Ω
Power dissipation: 1.5W
Pulsed drain current: 12A
Gate-source voltage: ±20V
Kind of package: reel; tape
на замовлення 1401 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 17.01 грн |
34+ | 11.92 грн |
100+ | 7.94 грн |
402+ | 2.31 грн |
1105+ | 2.18 грн |
BXT1000N06M |
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Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3
Case: SOT23-3
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 2A
Gate charge: 5.2nC
On-state resistance: 0.11Ω
Power dissipation: 1.5W
Pulsed drain current: 12A
Gate-source voltage: ±20V
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3
Case: SOT23-3
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 2A
Gate charge: 5.2nC
On-state resistance: 0.11Ω
Power dissipation: 1.5W
Pulsed drain current: 12A
Gate-source voltage: ±20V
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 1401 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
15+ | 20.41 грн |
20+ | 14.86 грн |
100+ | 9.52 грн |
402+ | 2.77 грн |
1105+ | 2.62 грн |
BXT1000N06N |
Виробник: BRIDGELUX
BXT1000N06N SMD N channel transistors
BXT1000N06N SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
BXT1080P06B |
Виробник: BRIDGELUX
BXT1080P06B SMD P channel transistors
BXT1080P06B SMD P channel transistors
товару немає в наявності
В кошику
од. на суму грн.
BXT1100P02M |
Виробник: BRIDGELUX
BXT1100P02M SMD P channel transistors
BXT1100P02M SMD P channel transistors
товару немає в наявності
В кошику
од. на суму грн.
BXT110P03E |
Виробник: BRIDGELUX
BXT110P03E SMD P channel transistors
BXT110P03E SMD P channel transistors
товару немає в наявності
В кошику
од. на суму грн.
BXT1150N10D |
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Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12.8A
Pulsed drain current: 64A
Power dissipation: 78W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12.8A
Pulsed drain current: 64A
Power dissipation: 78W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 4404 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
22+ | 19.56 грн |
26+ | 15.32 грн |
33+ | 12.24 грн |
100+ | 10.90 грн |
142+ | 6.55 грн |
390+ | 6.24 грн |
BXT1150N10D |
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Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12.8A
Pulsed drain current: 64A
Power dissipation: 78W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12.8A
Pulsed drain current: 64A
Power dissipation: 78W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 4404 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
14+ | 23.47 грн |
16+ | 19.09 грн |
25+ | 14.69 грн |
100+ | 13.08 грн |
142+ | 7.86 грн |
390+ | 7.49 грн |
BXT1150N10J |
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Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.6A
Pulsed drain current: 32A
Power dissipation: 2W
Case: SOT89-3
Gate-source voltage: ±20V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.6A
Pulsed drain current: 32A
Power dissipation: 2W
Case: SOT89-3
Gate-source voltage: ±20V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
BXT1150N10J |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.6A
Pulsed drain current: 32A
Power dissipation: 2W
Case: SOT89-3
Gate-source voltage: ±20V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.6A
Pulsed drain current: 32A
Power dissipation: 2W
Case: SOT89-3
Gate-source voltage: ±20V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
BXT1700P06M |
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Виробник: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W
Kind of channel: enhancement
Case: SOT23-3
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -16A
Drain current: -2.8A
Gate charge: 22nC
On-state resistance: 0.17Ω
Power dissipation: 1.5W
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W
Kind of channel: enhancement
Case: SOT23-3
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -16A
Drain current: -2.8A
Gate charge: 22nC
On-state resistance: 0.17Ω
Power dissipation: 1.5W
Gate-source voltage: ±20V
на замовлення 2946 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 14.46 грн |
35+ | 11.53 грн |
43+ | 9.32 грн |
100+ | 8.29 грн |
193+ | 4.82 грн |
529+ | 4.58 грн |
BXT1700P06M |
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Виробник: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W
Kind of channel: enhancement
Case: SOT23-3
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -16A
Drain current: -2.8A
Gate charge: 22nC
On-state resistance: 0.17Ω
Power dissipation: 1.5W
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W
Kind of channel: enhancement
Case: SOT23-3
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -16A
Drain current: -2.8A
Gate charge: 22nC
On-state resistance: 0.17Ω
Power dissipation: 1.5W
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
на замовлення 2946 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
18+ | 17.35 грн |
21+ | 14.37 грн |
26+ | 11.18 грн |
100+ | 9.95 грн |
193+ | 5.78 грн |
529+ | 5.50 грн |
BXT170N06D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 200A; 94W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 94W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 200A; 94W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 94W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
товару немає в наявності
В кошику
од. на суму грн.
BXT170N06D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 200A; 94W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 94W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 200A; 94W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 94W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
BXT210N02M |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 12.1nC
On-state resistance: 21mΩ
Power dissipation: 1.6W
Drain current: 6.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Pulsed drain current: 27.2A
Case: SOT23
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 12.1nC
On-state resistance: 21mΩ
Power dissipation: 1.6W
Drain current: 6.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Pulsed drain current: 27.2A
Case: SOT23
на замовлення 11939 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 21.26 грн |
31+ | 12.95 грн |
61+ | 6.47 грн |
102+ | 3.89 грн |
250+ | 2.60 грн |
431+ | 2.16 грн |
1000+ | 2.08 грн |
1186+ | 2.04 грн |
3000+ | 1.96 грн |
BXT210N02M |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 12.1nC
On-state resistance: 21mΩ
Power dissipation: 1.6W
Drain current: 6.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Pulsed drain current: 27.2A
Case: SOT23
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 12.1nC
On-state resistance: 21mΩ
Power dissipation: 1.6W
Drain current: 6.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Pulsed drain current: 27.2A
Case: SOT23
кількість в упаковці: 1 шт
на замовлення 11939 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
12+ | 25.51 грн |
19+ | 16.14 грн |
37+ | 7.77 грн |
100+ | 4.67 грн |
250+ | 3.12 грн |
431+ | 2.59 грн |
1000+ | 2.49 грн |
BXT230P03B |
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Виробник: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -40A
Power dissipation: 3.9W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -40A
Power dissipation: 3.9W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1994 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 22.11 грн |
25+ | 16.42 грн |
29+ | 14.05 грн |
100+ | 11.21 грн |
127+ | 7.34 грн |
349+ | 6.87 грн |
BXT230P03B |
![]() |
Виробник: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -40A
Power dissipation: 3.9W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -40A
Power dissipation: 3.9W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 1994 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
12+ | 26.53 грн |
15+ | 20.47 грн |
25+ | 16.86 грн |
100+ | 13.45 грн |
127+ | 8.81 грн |
349+ | 8.24 грн |
2000+ | 8.05 грн |