Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (129558) > Сторінка 141 з 2160

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IRS20957SPBF IRS20957SPBF Infineon Technologies IRS20957S.pdf Description: IC AUDIO AMP D 16-SOIC
Features: Short-Circuit Protection, Shutdown
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 15V
Supplier Device Package: 16-SOIC
Part Status: Discontinued at Digi-Key
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IRS2158DPBF IRS2158DPBF Infineon Technologies IRS2158D%28S%29.pdf Description: IC FLRSCT LAMP CTR 48.3KHZ 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Frequency: 43.7kHz ~ 48.3kHz
Type: Fluorescent Lamp Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11.5V ~ 16.6V
Supplier Device Package: 16-DIP
Dimming: Yes
Part Status: Obsolete
Current - Supply: 10 mA
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IRS2158DSPBF IRS2158DSPBF Infineon Technologies IRS2158D%28S%29.pdf Description: IC FLRSCT LMP CTL 48.3KHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 43.7kHz ~ 48.3kHz
Type: Fluorescent Lamp Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11.5V ~ 16.6V
Supplier Device Package: 16-SOIC
Dimming: Yes
Part Status: Obsolete
Current - Supply: 10 mA
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IRS24531DSPBF IRS24531DSPBF Infineon Technologies irs2453d.pdf?fileId=5546d462533600a40153567ac42f2814 Description: IC GATE DRVR FULL-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Full-Bridge
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 4.7V, 9.3V
Current - Peak Output (Source, Sink): 180mA, 260mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IRF6729MTR1PBF IRF6729MTR1PBF Infineon Technologies IRF6729M(TR)PBF.pdf Description: MOSFET N-CH 30V 31A DIRECTFET
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IRF8313TRPBF IRF8313TRPBF Infineon Technologies irf8313pbf.pdf?fileId=5546d462533600a40153560d38521d63 Description: MOSFET 2N-CH 30V 9.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.7A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Not For New Designs
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IRF8513TRPBF IRF8513TRPBF Infineon Technologies irf8513pbf.pdf?fileId=5546d462533600a40153560d49221d67 Description: MOSFET 2N-CH 30V 8A/11A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W, 2.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A, 11A
Input Capacitance (Ciss) (Max) @ Vds: 766pF @ 15V
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
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IRF8734TRPBF IRF8734TRPBF Infineon Technologies infineon-irf8734-datasheet-en.pdf Description: MOSFET N-CH 30V 21A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 21A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 15 V
на замовлення 113766 шт:
термін постачання 21-31 дні (днів)
3+136.19 грн
10+83.11 грн
50+62.40 грн
100+52.28 грн
500+41.25 грн
Мінімальне замовлення: 3 шт
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IRFH3702TR2PBF IRFH3702TR2PBF Infineon Technologies irfh3702pbf.pdf?fileId=5546d462533600a40153561a25871e76 Description: MOSFET N-CH 30V 16A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (3x3)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 15 V
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IRFH5053TR2PBF IRFH5053TR2PBF Infineon Technologies irfh5053pbf.pdf?fileId=5546d462533600a40153561ad6851ea2 Description: MOSFET N-CH 100V 9.3A PQFN56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 50 V
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IRFH7914TR2PBF IRFH7914TR2PBF Infineon Technologies irfh7914pbf.pdf?fileId=5546d462533600a40153561f45031efc Description: MOSFET N-CH 30V 15A PQFN56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 15 V
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IRFH7921TR2PBF IRFH7921TR2PBF Infineon Technologies IRFH7921PBF.pdf Description: MOSFET N-CH 30V 15A/34A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6) Single Die
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
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IRFH7932TR2PBF IRFH7932TR2PBF Infineon Technologies irfh7932pbf.pdf?fileId=5546d462533600a40153561f59df1f02 Description: MOSFET N-CH 30V 24A PQFN56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Power Dissipation (Max): 3.4W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 15 V
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IRFH7936TR2PBF IRFH7936TR2PBF Infineon Technologies IRFH7936PbF.pdf Description: MOSFET N-CH 30V 20A PQFN56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V
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IRFS3004TRL7PP IRFS3004TRL7PP Infineon Technologies irfs3004-7ppbf.pdf?fileId=5546d462533600a40153563631632147 Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 195A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 25 V
на замовлення 2404 шт:
термін постачання 21-31 дні (днів)
1+331.76 грн
10+210.67 грн
50+163.89 грн
100+139.65 грн
В кошику  од. на суму  грн.
IRFS3004TRLPBF IRFS3004TRLPBF Infineon Technologies irfs3004pbf.pdf?fileId=5546d462533600a4015356363a642149 Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Ta)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 195A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
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IRFS3006TRL7PP IRFS3006TRL7PP Infineon Technologies irfs3006-7ppbf.pdf?fileId=5546d462533600a4015356364189214d Description: MOSFET N-CH 60V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 168A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8850 pF @ 50 V
на замовлення 2788 шт:
термін постачання 21-31 дні (днів)
1+375.31 грн
10+239.57 грн
50+187.26 грн
100+159.94 грн
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IRFS3006TRLPBF IRFS3006TRLPBF Infineon Technologies irfs3006pbf.pdf?fileId=5546d462533600a4015356364a7a214f Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 170A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 50 V
на замовлення 3754 шт:
термін постачання 21-31 дні (днів)
2+308.01 грн
10+195.19 грн
50+151.72 грн
100+129.23 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRFS3107TRLPBF IRFS3107TRLPBF Infineon Technologies infineon-irfs3107-datasheet-en.pdf Description: MOSFET N-CH 75V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 140A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9370 pF @ 50 V
на замовлення 6974 шт:
термін постачання 21-31 дні (днів)
1+410.15 грн
10+263.66 грн
50+207.13 грн
100+177.30 грн
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IRFS4010TRL7PP IRFS4010TRL7PP Infineon Technologies irfs4010-7ppbf.pdf?fileId=5546d462533600a401535636c33c2185 Description: MOSFET N-CH 100V 190A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9830 pF @ 50 V
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IRFS4010TRLPBF IRFS4010TRLPBF Infineon Technologies infineon-irfs4010-datasheet-en.pdf Description: MOSFET N-CH 100V 180A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V
на замовлення 26200 шт:
термін постачання 21-31 дні (днів)
1+411.73 грн
10+263.43 грн
50+206.45 грн
100+176.52 грн
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IRFS4020TRLPBF IRFS4020TRLPBF Infineon Technologies irfs4020pbf.pdf?fileId=5546d462533600a401535636d48b218a Description: MOSFET N-CH 200V 18A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 11A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 50 V
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IRFS4127TRLPBF IRFS4127TRLPBF Infineon Technologies irfs4127pbf.pdf?fileId=5546d462533600a401535636ee7b2192 Description: MOSFET N-CH 200V 72A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V
на замовлення 6976 шт:
термін постачання 21-31 дні (днів)
1+357.10 грн
10+228.36 грн
50+178.59 грн
100+152.57 грн
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IRFS4615TRLPBF IRFS4615TRLPBF Infineon Technologies irfs4615pbf.pdf?fileId=5546d462533600a40153563a456a21bb Description: MOSFET N-CH 150V 33A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
на замовлення 2411 шт:
термін постачання 21-31 дні (днів)
2+212.20 грн
10+132.21 грн
100+91.11 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRLR3636TRPBF IRLR3636TRPBF Infineon Technologies infineon-irlr3636-datasheet-en.pdf Description: MOSFET N-CH 60V 50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
на замовлення 16315 шт:
термін постачання 21-31 дні (днів)
2+158.36 грн
10+97.29 грн
50+73.52 грн
100+61.81 грн
500+49.19 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRLS3034TRL7PP IRLS3034TRL7PP Infineon Technologies irls3034-7ppbf.pdf?fileId=5546d462533600a401535671af462705 Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 200A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10990 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLS3034TRLPBF IRLS3034TRLPBF Infineon Technologies irls3034pbf.pdf?fileId=5546d462533600a401535671b7472707 Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10315 pF @ 25 V
на замовлення 2154 шт:
термін постачання 21-31 дні (днів)
2+269.21 грн
10+169.57 грн
50+130.89 грн
100+111.13 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRLS3036TRLPBF IRLS3036TRLPBF Infineon Technologies infineon-irls3036-datasheet-en.pdf Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
на замовлення 7320 шт:
термін постачання 21-31 дні (днів)
1+328.60 грн
10+208.84 грн
50+162.50 грн
100+138.49 грн
В кошику  од. на суму  грн.
IRLS4030TRL7PP IRLS4030TRL7PP Infineon Technologies irls4030-7ppbf.pdf?fileId=5546d462533600a401535671d8902713 Description: MOSFET N-CH 100V 190A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 110A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11490 pF @ 50 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+378.48 грн
В кошику  од. на суму  грн.
IRLS4030TRLPBF IRLS4030TRLPBF Infineon Technologies infineon-irls4030-datasheet-en.pdf Description: MOSFET N-CH 100V 180A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V
на замовлення 4281 шт:
термін постачання 21-31 дні (днів)
1+391.15 грн
10+250.40 грн
50+196.31 грн
100+167.88 грн
В кошику  од. на суму  грн.
CY2CC910OXI-1 CY2CC910OXI-1 Infineon Technologies cy2cc910_8.pdf Description: IC CLK BUFFER 1:10 650MHZ 20SSOP
Packaging: Tube
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: AVCMOS
Type: Fanout Buffer (Distribution)
Input: AVCMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.465V
Ratio - Input:Output: 1:10
Differential - Input:Output: No/No
Supplier Device Package: 20-SSOP
Frequency - Max: 650 MHz
товару немає в наявності
 Мінімальне замовлення: 132 шт
В кошику  од. на суму  грн.
CY2CC910OXI-1T CY2CC910OXI-1T Infineon Technologies cy2cc910_8.pdf Description: IC CLK BUFFER 1:10 650MHZ 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: AVCMOS
Type: Fanout Buffer (Distribution)
Input: AVCMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.465V
Ratio - Input:Output: 1:10
Differential - Input:Output: No/No
Supplier Device Package: 20-SSOP
Frequency - Max: 650 MHz
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
CY7C10612DV33-10ZSXIT Infineon Technologies Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1306CV25-167BZC CY7C1306CV25-167BZC Infineon Technologies cy7c130%283%2C6%29cv25.pdf Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.4V ~ 2.6V
Technology: SRAM - Synchronous, QDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1315JV18-300BZC CY7C1315JV18-300BZC Infineon Technologies CY7C1311%2813%2C15%29%2C1911JV18_8.pdf Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1423JV18-250BZXC CY7C1423JV18-250BZXC Infineon Technologies CY7C1422,3,4,9JV18.pdf Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 2M x 18
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В кошику  од. на суму  грн.
CY7C1423JV18-267BZXCT CY7C1423JV18-267BZXCT Infineon Technologies CY7C1422,3,4,9JV18.pdf Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tape & Reel (TR)
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 267 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 2M x 18
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CY8C20434-12LQXIT CY8C20434-12LQXIT Infineon Technologies Infineon-CY8C20134_CY8C20234_CY8C20334_CY8C20434_CY8C20534_CY8C20634_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcc61b2e7f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI
Peripherals: LVD, POR, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
CY8C24633-24PVXIT CY8C24633-24PVXIT Infineon Technologies Infineon-CY8C24633_PSoC_Programmable_System-on-Chip-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6f18d3d96&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 8BIT 8KB FLASH 28SSOP
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
CYONS2000-LBXC CYONS2000-LBXC Infineon Technologies Description: SENSOR OPT 42 BQFN MODULE
Packaging: Tray
Package / Case: 42-BQFN Module
Mounting Type: Surface Mount
Supplier Device Package: 42-PQFN (8.3x8.3)
Part Status: Obsolete
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CYONS2001-LBXC CYONS2001-LBXC Infineon Technologies Description: SENSOR OPT 42 BQFN MODULE
Packaging: Tray
Package / Case: 42-BQFN Module
Mounting Type: Surface Mount
Supplier Device Package: 42-PQFN (8.3x8.3)
Part Status: Obsolete
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CYONS2100-LBXC CYONS2100-LBXC Infineon Technologies CYONS2100.pdf Description: SENSOR OPT 42 BQFN MODULE
Packaging: Tray
Package / Case: 42-BQFN Module
Mounting Type: Surface Mount
Supplier Device Package: 42-PQFN (8.3x8.3)
Part Status: Obsolete
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CYONS2101-LBXC CYONS2101-LBXC Infineon Technologies Description: SENSOR OPT 42 BQFN MODULE
Packaging: Tray
Package / Case: 42-BQFN Module
Mounting Type: Surface Mount
Supplier Device Package: 42-PQFN (8.3x8.3)
Part Status: Obsolete
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CYONS2110-LBXC CYONS2110-LBXC Infineon Technologies Description: SENSOR OPT 42 BQFN MODULE
Packaging: Tray
Package / Case: 42-BQFN Module
Mounting Type: Surface Mount
Supplier Device Package: 42-PQFN (8.3x8.3)
Part Status: Obsolete
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CYWB0224ABM-BVXI CYWB0224ABM-BVXI Infineon Technologies CYWB0224%2C26ABS%2CABM.pdf Description: IC WEST BRIDGE HS-USB 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Function: Controller
Interface: Parallel
Voltage - Supply: 1.8V ~ 3.3V
Protocol: USB, Memory Card
Standards: USB 2.0
Supplier Device Package: 100-VFBGA (6x6)
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
CYWB0224ABMX-FDXIT CYWB0224ABMX-FDXIT Infineon Technologies CYWB0224,26ABS,ABM.pdf Description: IC WEST BRIDGE HS-USB 81-WLCSP
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CYWB0224ABS-BVXIT CYWB0224ABS-BVXIT Infineon Technologies download Description: IC WEST BRIDGE HS-USB 100VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-VFBGA
Function: Controller
Interface: Parallel
Voltage - Supply: 1.8V ~ 3.3V
Protocol: USB, Memory Card
Standards: USB 2.0
Supplier Device Package: 100-VFBGA (6x6)
DigiKey Programmable: Not Verified
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CYWB0226ABMX-FDXIT CYWB0226ABMX-FDXIT Infineon Technologies CYWB0224,26ABS,ABM.pdf Description: IC WEST BRIDGE HS-USB 81-WLCSP
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CYWB0226ABS-BVXIT CYWB0226ABS-BVXIT Infineon Technologies download Description: IC WEST BRIDGE HS-USB 100VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-VFBGA
Function: Controller
Interface: Parallel
Voltage - Supply: 1.8V ~ 3.3V
Protocol: USB, Memory Card
Standards: USB 2.0
Supplier Device Package: 100-VFBGA (6x6)
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IRF1404ZGPBF IRF1404ZGPBF Infineon Technologies IRF1404ZGPBF.pdf Description: MOSFET N-CH 40V 180A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
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IRF7665S2TR1PBF IRF7665S2TR1PBF Infineon Technologies IRF7665S2TR%281%29PbF.pdf Description: MOSFET N-CH 100V 4.1A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 14.4A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 8.9A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 25µA
Supplier Device Package: DIRECTFET SB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 25 V
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IRF8707GTRPBF IRF8707GTRPBF Infineon Technologies IRF8707GPbF.pdf Description: MOSFET N-CH 30V 11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V
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IRF8714GTRPBF IRF8714GTRPBF Infineon Technologies IRF8714GPbF.pdf Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
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IRF8721GTRPBF IRF8721GTRPBF Infineon Technologies IRF8721GPbF.pdf Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
товару немає в наявності
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IRFB3004GPBF IRFB3004GPBF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH 40V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 195A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
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IRFB3006GPBF IRFB3006GPBF Infineon Technologies irfb3006gpbf.pdf?fileId=5546d462533600a4015356123f051de7 Description: MOSFET N-CH 60V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 170A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 50 V
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IRGI4056DPBF IRGI4056DPBF Infineon Technologies irgi4056dpbf.pdf Description: IGBT TRENCH 600V 18A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 9A
Supplier Device Package: TO-220AB Full-Pak
IGBT Type: Trench
Td (on/off) @ 25°C: 34ns/84ns
Switching Energy: 59µJ (on), 177µJ (off)
Test Condition: 400V, 9A, 22Ohm, 15V
Gate Charge: 25 nC
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 27 A
Power - Max: 34 W
товару немає в наявності
 Мінімальне замовлення: 150 шт
В кошику  од. на суму  грн.
IRLB3813PBF IRLB3813PBF Infineon Technologies infineon-irlb3813-datasheet-en.pdf Description: MOSFET N-CH 30V 260A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 60A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8420 pF @ 15 V
на замовлення 6370 шт:
термін постачання 21-31 дні (днів)
2+197.16 грн
10+122.68 грн
50+93.54 грн
100+78.97 грн
500+63.49 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRF8707GPBF IRF8707GPBF Infineon Technologies IRF8707GPbF.pdf Description: MOSFET N-CH 30V 11A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V
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IRF8714GPBF IRF8714GPBF Infineon Technologies IRF8714GPbF.pdf Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
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IRS20957SPBF IRS20957S.pdf
IRS20957SPBF
Виробник: Infineon Technologies
Description: IC AUDIO AMP D 16-SOIC
Features: Short-Circuit Protection, Shutdown
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 15V
Supplier Device Package: 16-SOIC
Part Status: Discontinued at Digi-Key
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IRS2158DPBF IRS2158D%28S%29.pdf
IRS2158DPBF
Виробник: Infineon Technologies
Description: IC FLRSCT LAMP CTR 48.3KHZ 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Frequency: 43.7kHz ~ 48.3kHz
Type: Fluorescent Lamp Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11.5V ~ 16.6V
Supplier Device Package: 16-DIP
Dimming: Yes
Part Status: Obsolete
Current - Supply: 10 mA
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IRS2158DSPBF IRS2158D%28S%29.pdf
IRS2158DSPBF
Виробник: Infineon Technologies
Description: IC FLRSCT LMP CTL 48.3KHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 43.7kHz ~ 48.3kHz
Type: Fluorescent Lamp Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11.5V ~ 16.6V
Supplier Device Package: 16-SOIC
Dimming: Yes
Part Status: Obsolete
Current - Supply: 10 mA
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IRS24531DSPBF irs2453d.pdf?fileId=5546d462533600a40153567ac42f2814
IRS24531DSPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR FULL-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Full-Bridge
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 4.7V, 9.3V
Current - Peak Output (Source, Sink): 180mA, 260mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IRF6729MTR1PBF IRF6729M(TR)PBF.pdf
IRF6729MTR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 31A DIRECTFET
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IRF8313TRPBF irf8313pbf.pdf?fileId=5546d462533600a40153560d38521d63
IRF8313TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 9.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.7A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Not For New Designs
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IRF8513TRPBF irf8513pbf.pdf?fileId=5546d462533600a40153560d49221d67
IRF8513TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 8A/11A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W, 2.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A, 11A
Input Capacitance (Ciss) (Max) @ Vds: 766pF @ 15V
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
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IRF8734TRPBF infineon-irf8734-datasheet-en.pdf
IRF8734TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 21A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 21A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 15 V
на замовлення 113766 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+136.19 грн
10+83.11 грн
50+62.40 грн
100+52.28 грн
500+41.25 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRFH3702TR2PBF irfh3702pbf.pdf?fileId=5546d462533600a40153561a25871e76
IRFH3702TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 16A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (3x3)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 15 V
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IRFH5053TR2PBF irfh5053pbf.pdf?fileId=5546d462533600a40153561ad6851ea2
IRFH5053TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 9.3A PQFN56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 50 V
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IRFH7914TR2PBF irfh7914pbf.pdf?fileId=5546d462533600a40153561f45031efc
IRFH7914TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 15A PQFN56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 15 V
товару немає в наявності
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IRFH7921TR2PBF IRFH7921PBF.pdf
IRFH7921TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 15A/34A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6) Single Die
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH7932TR2PBF irfh7932pbf.pdf?fileId=5546d462533600a40153561f59df1f02
IRFH7932TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 24A PQFN56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Power Dissipation (Max): 3.4W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 15 V
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IRFH7936TR2PBF IRFH7936PbF.pdf
IRFH7936TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 20A PQFN56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V
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В кошику  од. на суму  грн.
IRFS3004TRL7PP irfs3004-7ppbf.pdf?fileId=5546d462533600a40153563631632147
IRFS3004TRL7PP
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 195A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 25 V
на замовлення 2404 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+331.76 грн
10+210.67 грн
50+163.89 грн
100+139.65 грн
В кошику  од. на суму  грн.
IRFS3004TRLPBF irfs3004pbf.pdf?fileId=5546d462533600a4015356363a642149
IRFS3004TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Ta)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 195A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFS3006TRL7PP irfs3006-7ppbf.pdf?fileId=5546d462533600a4015356364189214d
IRFS3006TRL7PP
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 168A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8850 pF @ 50 V
на замовлення 2788 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+375.31 грн
10+239.57 грн
50+187.26 грн
100+159.94 грн
В кошику  од. на суму  грн.
IRFS3006TRLPBF irfs3006pbf.pdf?fileId=5546d462533600a4015356364a7a214f
IRFS3006TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 170A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 50 V
на замовлення 3754 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+308.01 грн
10+195.19 грн
50+151.72 грн
100+129.23 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRFS3107TRLPBF infineon-irfs3107-datasheet-en.pdf
IRFS3107TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 140A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9370 pF @ 50 V
на замовлення 6974 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+410.15 грн
10+263.66 грн
50+207.13 грн
100+177.30 грн
В кошику  од. на суму  грн.
IRFS4010TRL7PP irfs4010-7ppbf.pdf?fileId=5546d462533600a401535636c33c2185
IRFS4010TRL7PP
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 190A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9830 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFS4010TRLPBF infineon-irfs4010-datasheet-en.pdf
IRFS4010TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 180A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V
на замовлення 26200 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+411.73 грн
10+263.43 грн
50+206.45 грн
100+176.52 грн
В кошику  од. на суму  грн.
IRFS4020TRLPBF irfs4020pbf.pdf?fileId=5546d462533600a401535636d48b218a
IRFS4020TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 18A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 11A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFS4127TRLPBF irfs4127pbf.pdf?fileId=5546d462533600a401535636ee7b2192
IRFS4127TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 72A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V
на замовлення 6976 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+357.10 грн
10+228.36 грн
50+178.59 грн
100+152.57 грн
В кошику  од. на суму  грн.
IRFS4615TRLPBF irfs4615pbf.pdf?fileId=5546d462533600a40153563a456a21bb
IRFS4615TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 33A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
на замовлення 2411 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+212.20 грн
10+132.21 грн
100+91.11 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRLR3636TRPBF infineon-irlr3636-datasheet-en.pdf
IRLR3636TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
на замовлення 16315 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+158.36 грн
10+97.29 грн
50+73.52 грн
100+61.81 грн
500+49.19 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRLS3034TRL7PP irls3034-7ppbf.pdf?fileId=5546d462533600a401535671af462705
IRLS3034TRL7PP
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 200A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10990 pF @ 40 V
товару немає в наявності
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IRLS3034TRLPBF irls3034pbf.pdf?fileId=5546d462533600a401535671b7472707
IRLS3034TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10315 pF @ 25 V
на замовлення 2154 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+269.21 грн
10+169.57 грн
50+130.89 грн
100+111.13 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRLS3036TRLPBF infineon-irls3036-datasheet-en.pdf
IRLS3036TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
на замовлення 7320 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+328.60 грн
10+208.84 грн
50+162.50 грн
100+138.49 грн
В кошику  од. на суму  грн.
IRLS4030TRL7PP irls4030-7ppbf.pdf?fileId=5546d462533600a401535671d8902713
IRLS4030TRL7PP
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 190A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 110A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11490 pF @ 50 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+378.48 грн
В кошику  од. на суму  грн.
IRLS4030TRLPBF infineon-irls4030-datasheet-en.pdf
IRLS4030TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 180A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V
на замовлення 4281 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+391.15 грн
10+250.40 грн
50+196.31 грн
100+167.88 грн
В кошику  од. на суму  грн.
CY2CC910OXI-1 cy2cc910_8.pdf
CY2CC910OXI-1
Виробник: Infineon Technologies
Description: IC CLK BUFFER 1:10 650MHZ 20SSOP
Packaging: Tube
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: AVCMOS
Type: Fanout Buffer (Distribution)
Input: AVCMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.465V
Ratio - Input:Output: 1:10
Differential - Input:Output: No/No
Supplier Device Package: 20-SSOP
Frequency - Max: 650 MHz
товару немає в наявності
Мінімальне замовлення: 132 шт
В кошику  од. на суму  грн.
CY2CC910OXI-1T cy2cc910_8.pdf
CY2CC910OXI-1T
Виробник: Infineon Technologies
Description: IC CLK BUFFER 1:10 650MHZ 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: AVCMOS
Type: Fanout Buffer (Distribution)
Input: AVCMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.465V
Ratio - Input:Output: 1:10
Differential - Input:Output: No/No
Supplier Device Package: 20-SSOP
Frequency - Max: 650 MHz
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
CY7C10612DV33-10ZSXIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1306CV25-167BZC cy7c130%283%2C6%29cv25.pdf
CY7C1306CV25-167BZC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.4V ~ 2.6V
Technology: SRAM - Synchronous, QDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1315JV18-300BZC CY7C1311%2813%2C15%29%2C1911JV18_8.pdf
CY7C1315JV18-300BZC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1423JV18-250BZXC CY7C1422,3,4,9JV18.pdf
CY7C1423JV18-250BZXC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 2M x 18
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1423JV18-267BZXCT CY7C1422,3,4,9JV18.pdf
CY7C1423JV18-267BZXCT
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tape & Reel (TR)
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 267 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 2M x 18
товару немає в наявності
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CY8C20434-12LQXIT Infineon-CY8C20134_CY8C20234_CY8C20334_CY8C20434_CY8C20534_CY8C20634_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcc61b2e7f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY8C20434-12LQXIT
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI
Peripherals: LVD, POR, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
CY8C24633-24PVXIT Infineon-CY8C24633_PSoC_Programmable_System-on-Chip-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6f18d3d96&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C24633-24PVXIT
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 28SSOP
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
CYONS2000-LBXC
CYONS2000-LBXC
Виробник: Infineon Technologies
Description: SENSOR OPT 42 BQFN MODULE
Packaging: Tray
Package / Case: 42-BQFN Module
Mounting Type: Surface Mount
Supplier Device Package: 42-PQFN (8.3x8.3)
Part Status: Obsolete
товару немає в наявності
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CYONS2001-LBXC
CYONS2001-LBXC
Виробник: Infineon Technologies
Description: SENSOR OPT 42 BQFN MODULE
Packaging: Tray
Package / Case: 42-BQFN Module
Mounting Type: Surface Mount
Supplier Device Package: 42-PQFN (8.3x8.3)
Part Status: Obsolete
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CYONS2100-LBXC CYONS2100.pdf
CYONS2100-LBXC
Виробник: Infineon Technologies
Description: SENSOR OPT 42 BQFN MODULE
Packaging: Tray
Package / Case: 42-BQFN Module
Mounting Type: Surface Mount
Supplier Device Package: 42-PQFN (8.3x8.3)
Part Status: Obsolete
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CYONS2101-LBXC
CYONS2101-LBXC
Виробник: Infineon Technologies
Description: SENSOR OPT 42 BQFN MODULE
Packaging: Tray
Package / Case: 42-BQFN Module
Mounting Type: Surface Mount
Supplier Device Package: 42-PQFN (8.3x8.3)
Part Status: Obsolete
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CYONS2110-LBXC
CYONS2110-LBXC
Виробник: Infineon Technologies
Description: SENSOR OPT 42 BQFN MODULE
Packaging: Tray
Package / Case: 42-BQFN Module
Mounting Type: Surface Mount
Supplier Device Package: 42-PQFN (8.3x8.3)
Part Status: Obsolete
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CYWB0224ABM-BVXI CYWB0224%2C26ABS%2CABM.pdf
CYWB0224ABM-BVXI
Виробник: Infineon Technologies
Description: IC WEST BRIDGE HS-USB 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Function: Controller
Interface: Parallel
Voltage - Supply: 1.8V ~ 3.3V
Protocol: USB, Memory Card
Standards: USB 2.0
Supplier Device Package: 100-VFBGA (6x6)
DigiKey Programmable: Not Verified
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CYWB0224ABMX-FDXIT CYWB0224,26ABS,ABM.pdf
CYWB0224ABMX-FDXIT
Виробник: Infineon Technologies
Description: IC WEST BRIDGE HS-USB 81-WLCSP
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CYWB0224ABS-BVXIT download
CYWB0224ABS-BVXIT
Виробник: Infineon Technologies
Description: IC WEST BRIDGE HS-USB 100VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-VFBGA
Function: Controller
Interface: Parallel
Voltage - Supply: 1.8V ~ 3.3V
Protocol: USB, Memory Card
Standards: USB 2.0
Supplier Device Package: 100-VFBGA (6x6)
DigiKey Programmable: Not Verified
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CYWB0226ABMX-FDXIT CYWB0224,26ABS,ABM.pdf
CYWB0226ABMX-FDXIT
Виробник: Infineon Technologies
Description: IC WEST BRIDGE HS-USB 81-WLCSP
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CYWB0226ABS-BVXIT download
CYWB0226ABS-BVXIT
Виробник: Infineon Technologies
Description: IC WEST BRIDGE HS-USB 100VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-VFBGA
Function: Controller
Interface: Parallel
Voltage - Supply: 1.8V ~ 3.3V
Protocol: USB, Memory Card
Standards: USB 2.0
Supplier Device Package: 100-VFBGA (6x6)
DigiKey Programmable: Not Verified
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IRF1404ZGPBF IRF1404ZGPBF.pdf
IRF1404ZGPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 180A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
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IRF7665S2TR1PBF IRF7665S2TR%281%29PbF.pdf
IRF7665S2TR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 4.1A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 14.4A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 8.9A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 25µA
Supplier Device Package: DIRECTFET SB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 25 V
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IRF8707GTRPBF IRF8707GPbF.pdf
IRF8707GTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V
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IRF8714GTRPBF IRF8714GPbF.pdf
IRF8714GTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
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IRF8721GTRPBF IRF8721GPbF.pdf
IRF8721GTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
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IRFB3004GPBF IR_PartNumberingSystem.pdf
IRFB3004GPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 195A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
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IRFB3006GPBF irfb3006gpbf.pdf?fileId=5546d462533600a4015356123f051de7
IRFB3006GPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 170A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 50 V
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IRGI4056DPBF irgi4056dpbf.pdf
IRGI4056DPBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 18A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 9A
Supplier Device Package: TO-220AB Full-Pak
IGBT Type: Trench
Td (on/off) @ 25°C: 34ns/84ns
Switching Energy: 59µJ (on), 177µJ (off)
Test Condition: 400V, 9A, 22Ohm, 15V
Gate Charge: 25 nC
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 27 A
Power - Max: 34 W
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Мінімальне замовлення: 150 шт
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IRLB3813PBF infineon-irlb3813-datasheet-en.pdf
IRLB3813PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 260A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 60A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8420 pF @ 15 V
на замовлення 6370 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+197.16 грн
10+122.68 грн
50+93.54 грн
100+78.97 грн
500+63.49 грн
Мінімальне замовлення: 2 шт
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IRF8707GPBF IRF8707GPbF.pdf
IRF8707GPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 11A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V
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IRF8714GPBF IRF8714GPbF.pdf
IRF8714GPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
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