Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (122998) > Сторінка 2029 з 2050
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BTS5012SDA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 6A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO252-5 On-state resistance: 12mΩ Supply voltage: 5.5...20V DC Technology: High Current PROFET |
на замовлення 970 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
BTS3035TF | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 5A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-TO252-3 On-state resistance: 70mΩ Technology: HITFET® Operating temperature: -40...150°C Output voltage: 40V Turn-on time: 115µs Turn-off time: 210µs |
на замовлення 1065 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
BTS3035EJ | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 5A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8-EP On-state resistance: 70mΩ Technology: HITFET® Operating temperature: -40...150°C Output voltage: 40V Turn-on time: 115µs Turn-off time: 210µs |
на замовлення 2995 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
BSC010N04LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 139W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
|
BSC010N04LSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 139W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
|
BCR320UE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: LED driversDescription: IC: driver; single transistor; current regulator,LED driver Case: SC74 Mounting: SMD Operating voltage: 0...25V DC Output current: 0.25A Kind of integrated circuit: current regulator; LED driver Type of integrated circuit: driver Number of channels: 1 Topology: single transistor |
на замовлення 759 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
| BCR321UE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: LED driversDescription: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: SC74 Output current: 0.25A Number of channels: 1 Mounting: SMD Operating voltage: 0...4.5V DC Topology: single transistor |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
|
SN7002NH6327XTSA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
IPW60R031CFD7 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 40A Power dissipation: 278W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 141nC Kind of package: tube Kind of channel: enhancement |
на замовлення 13 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
IPW60R037P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 48A Power dissipation: 255W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 37mΩ Mounting: THT Gate charge: 121nC Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 158 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
| IPW60R037CSFDXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 25A; 245W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Power dissipation: 245W Case: TO247-3 On-state resistance: 37mΩ Mounting: THT Gate charge: 136nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
BCV46E6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.36W Case: SOT23 Mounting: SMD Frequency: 200MHz |
на замовлення 8720 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
| BCR112E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 140MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Kind of transistor: BRT |
на замовлення 10 шт: термін постачання 14-30 дні (днів) |
|
|||||||||||||||||||
|
BCV61BE6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143 Mounting: SMD Case: SOT143 Collector current: 0.1A Power dissipation: 0.3W Type of transistor: NPN x2 Collector-emitter voltage: 30V Polarisation: bipolar Frequency: 250MHz |
на замовлення 928 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
BCR505E6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 100MHz Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ |
на замовлення 5972 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
BCR135E6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 150MHz Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
на замовлення 372 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
BCR185E6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 200MHz Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
на замовлення 1615 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
BCX71KE6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
на замовлення 11042 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
BCR148E6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 100MHz Kind of transistor: BRT Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
на замовлення 135 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
BCR533E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 100MHz Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
на замовлення 4 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
BCR158E6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 200MHz Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ |
на замовлення 10 шт: термін постачання 14-30 дні (днів) |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||||||
|
BCX70HE6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
на замовлення 1025 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
BCX71HE6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
на замовлення 2380 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
BCR503E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 100MHz Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ |
на замовлення 3310 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
BC847SH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.25W; SOT363 Collector-emitter voltage: 45V Frequency: 250MHz Polarisation: bipolar Case: SOT363 Type of transistor: NPN x2 Mounting: SMD Collector current: 0.1A Power dissipation: 0.25W |
на замовлення 1081 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
BCX71GE6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
на замовлення 2720 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
BCW67CE6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 32V; 0.8A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.8A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 200MHz |
на замовлення 48 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
BCR555E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 150MHz Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ |
на замовлення 2500 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
FM24VN10-G | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 1MbFRAM; I2C; 128kx8bit; 2÷3.6VDC; 3.4MHz; SO8 Mounting: SMD Operating temperature: -40...85°C Case: SO8 Kind of memory: FRAM Type of integrated circuit: FRAM memory Interface: I2C Kind of interface: serial Supply voltage: 2...3.6V DC Memory: 1Mb FRAM Clock frequency: 3.4MHz Memory organisation: 128kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
FM24V01A-G | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 128kbFRAM; I2C; 16kx8bit; 2÷3.6VDC; 3.4MHz; SO8 Interface: I2C Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2...3.6V DC Memory: 128kb FRAM Clock frequency: 3.4MHz Memory organisation: 16kx8bit Case: SO8 Kind of memory: FRAM Type of integrated circuit: FRAM memory Kind of interface: serial |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
FM24V01A-GTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 128kbFRAM; I2C; 16kx8bit; 2÷3.6VDC; 3.4MHz; SO8 Interface: I2C Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2...3.6V DC Memory: 128kb FRAM Clock frequency: 3.4MHz Memory organisation: 16kx8bit Case: SO8 Kind of memory: FRAM Type of integrated circuit: FRAM memory Kind of interface: serial |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
FM24V05-GTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 512kbFRAM; I2C; 64kx8bit; 2÷3.6VDC; 3.4MHz; SO8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 512kb FRAM Interface: I2C Memory organisation: 64kx8bit Supply voltage: 2...3.6V DC Clock frequency: 3.4MHz Case: SO8 Mounting: SMD Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
FM24V02A-G | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SO8 Interface: I2C Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2...3.6V DC Memory: 256kb FRAM Clock frequency: 3.4MHz Memory organisation: 32kx8bit Case: SO8 Kind of memory: FRAM Type of integrated circuit: FRAM memory Kind of interface: serial |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
FM24V05-G | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 512kbFRAM; I2C; 64kx8bit; 2÷3.6VDC; 3.4MHz; SO8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 512kb FRAM Interface: I2C Memory organisation: 64kx8bit Supply voltage: 2...3.6V DC Clock frequency: 3.4MHz Case: SO8 Mounting: SMD Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
FM24V02A-GTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SO8 Interface: I2C Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2...3.6V DC Memory: 256kb FRAM Clock frequency: 3.4MHz Memory organisation: 32kx8bit Case: SO8 Kind of memory: FRAM Type of integrated circuit: FRAM memory Kind of interface: serial |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
FM24VN10-GTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 1MbFRAM; I2C; 128kx8bit; 2÷3.6VDC; 3.4MHz; SO8 Mounting: SMD Kind of memory: FRAM Type of integrated circuit: FRAM memory Interface: I2C Kind of interface: serial Case: SO8 Operating temperature: -40...85°C Supply voltage: 2...3.6V DC Memory: 1Mb FRAM Clock frequency: 3.4MHz Memory organisation: 128kx8bit |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
|
FM24W256-G | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2.7÷5.5VDC; 1MHz; SO8 Mounting: SMD Operating temperature: -40...85°C Case: SO8 Kind of memory: FRAM Type of integrated circuit: FRAM memory Interface: I2C Kind of interface: serial Supply voltage: 2.7...5.5V DC Memory: 256kb FRAM Clock frequency: 1MHz Memory organisation: 32kx8bit |
товару немає в наявності |
Мінімальне замовлення: 970 шт В кошику од. на суму грн. | ||||||||||||||||||
|
FM24W256-GTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2.7÷5.5VDC; 1MHz; SO8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 256kb FRAM Interface: I2C Memory organisation: 32kx8bit Supply voltage: 2.7...5.5V DC Clock frequency: 1MHz Case: SO8 Mounting: SMD Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
|
BAT165E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.75A Type of diode: Schottky rectifying Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 0.75A Semiconductor structure: single diode Max. forward voltage: 0.74V |
на замовлення 2894 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
| IPA65R400CEXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 15.1A; 31W; TO220FP Mounting: THT Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 39nC On-state resistance: 0.36Ω Drain current: 15.1A Power dissipation: 31W Drain-source voltage: 650V Case: TO220FP Kind of channel: enhancement |
на замовлення 92 шт: термін постачання 14-30 дні (днів) |
|
|||||||||||||||||||
| CY15B128J-SXA | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 128kbFRAM; I2C; 16kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8 Type of integrated circuit: FRAM memory Case: SOIC8 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2...3.6V DC Memory: 128kb FRAM Clock frequency: 3.4MHz Memory organisation: 16kx8bit Kind of memory: FRAM Interface: I2C |
товару немає в наявності |
Мінімальне замовлення: 970 шт В кошику од. на суму грн. | |||||||||||||||||||
| CY15B128J-SXAT | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 128kbFRAM; I2C; 16kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8 Type of integrated circuit: FRAM memory Case: SOIC8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Supply voltage: 2...3.6V DC Memory: 128kb FRAM Clock frequency: 3.4MHz Memory organisation: 16kx8bit Kind of memory: FRAM Interface: I2C |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
| CY15B128Q-SXA | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2÷3.6VDC; 40MHz; SOIC8 Type of integrated circuit: FRAM memory Case: SOIC8 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2...3.6V DC Memory: 128kb FRAM Clock frequency: 40MHz Memory organisation: 16kx8bit Kind of memory: FRAM Interface: SPI |
товару немає в наявності |
Мінімальне замовлення: 485 шт В кошику од. на суму грн. | |||||||||||||||||||
| CY15B128Q-SXAT | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2÷3.6VDC; 40MHz; SOIC8 Type of integrated circuit: FRAM memory Case: SOIC8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Supply voltage: 2...3.6V DC Memory: 128kb FRAM Clock frequency: 40MHz Memory organisation: 16kx8bit Kind of memory: FRAM Interface: SPI |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
| CY15B128Q-SXE | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2.7÷3.6VDC; 33MHz; SOIC8 Type of integrated circuit: FRAM memory Case: SOIC8 Mounting: SMD Operating temperature: -40...125°C Supply voltage: 2.7...3.6V DC Memory: 128kb FRAM Clock frequency: 33MHz Memory organisation: 16kx8bit Kind of memory: FRAM Interface: SPI |
товару немає в наявності |
Мінімальне замовлення: 485 шт В кошику од. на суму грн. | |||||||||||||||||||
| CY15B128Q-SXET | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2.7÷3.6VDC; 33MHz; SOIC8 Type of integrated circuit: FRAM memory Case: SOIC8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Supply voltage: 2.7...3.6V DC Memory: 128kb FRAM Clock frequency: 33MHz Memory organisation: 16kx8bit Kind of memory: FRAM Interface: SPI |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
|
FM18W08-SG | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 2.7÷5.5VDC Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 256kb FRAM Interface: parallel 8bit Memory organisation: 32kx8bit Supply voltage: 2.7...5.5V DC Access time: 70ns Case: SO28 Mounting: SMD Kind of interface: parallel Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
IPP023N08N5AKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Power dissipation: 375W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
BCX42E6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 125V; 0.8A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 125V Collector current: 0.8A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 150MHz |
на замовлення 903 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
IRFS4310ZTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 127A Power dissipation: 250W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
|
IAUC100N08S5N031ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W Case: PG-TDSON-8 Technology: OptiMOS™ 5 Drain current: 100A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 3.1mΩ Mounting: SMD Pulsed drain current: 400A Power dissipation: 167W Polarisation: unipolar |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
|
IAUC100N08S5N034ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W Case: PG-TDSON-8 Technology: OptiMOS™ 5 Drain current: 22A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 4.8mΩ Mounting: SMD Pulsed drain current: 400A Power dissipation: 136W Gate charge: 66nC Polarisation: unipolar |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
|
IAUC100N08S5N043ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W Case: PG-TDSON-8 Technology: OptiMOS™ 5 Drain current: 76A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 4.3mΩ Mounting: SMD Pulsed drain current: 400A Power dissipation: 120W Polarisation: unipolar |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
|
IPB80N08S2L07ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 80A; 300W; PG-TO263-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 300W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 6.8mΩ Mounting: SMD Gate charge: 183nC Kind of channel: enhancement Technology: OptiMOS™ |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
| IAUA180N08S5N026AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 25A; Idm: 546A; 179W; PG-HSOF-5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 25A Pulsed drain current: 546A Power dissipation: 179W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 87nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 5 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||||
|
IRFP3077PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 200A; 340W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 200A Case: TO247AC Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 3.3mΩ Gate-source voltage: ±20V Gate charge: 160nC Technology: HEXFET® Power dissipation: 340W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
IRFU120NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 9.1A Power dissipation: 39W Case: IPAK Gate-source voltage: ±20V On-state resistance: 0.21Ω Mounting: THT Gate charge: 16.7nC Kind of channel: enhancement |
на замовлення 1410 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||||||||
|
CY15B104Q-LHXIT | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 2÷3.6VDC; 40MHz; TDFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 4Mb FRAM Interface: SPI Memory organisation: 512kx8bit Supply voltage: 2...3.6V DC Clock frequency: 40MHz Case: TDFN8 Mounting: SMD Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
CY15B104Q-SXIT | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 2÷3.6VDC; 40MHz; SO8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 4Mb FRAM Interface: SPI Memory organisation: 512kx8bit Supply voltage: 2...3.6V DC Clock frequency: 40MHz Case: SO8 Mounting: SMD Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||||
|
FM1808B-SGTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 4.5÷5.5VDC Type of integrated circuit: FRAM memory Kind of memory: FRAM Interface: parallel 8bit Kind of interface: parallel Mounting: SMD Case: SO28 Operating temperature: -40...85°C Access time: 70ns Supply voltage: 4.5...5.5V DC Memory: 256kb FRAM Memory organisation: 32kx8bit |
товару немає в наявності |
В кошику од. на суму грн. |
| BTS5012SDA |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 12mΩ
Supply voltage: 5.5...20V DC
Technology: High Current PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 12mΩ
Supply voltage: 5.5...20V DC
Technology: High Current PROFET
на замовлення 970 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 175.01 грн |
| 10+ | 126.03 грн |
| BTS3035TF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 70mΩ
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 70mΩ
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
на замовлення 1065 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 117.86 грн |
| 5+ | 100.32 грн |
| 10+ | 93.69 грн |
| 25+ | 83.74 грн |
| 100+ | 72.96 грн |
| 250+ | 67.16 грн |
| 500+ | 62.18 грн |
| 1000+ | 60.53 грн |
| BTS3035EJ |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 70mΩ
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 70mΩ
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
на замовлення 2995 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 89.54 грн |
| 25+ | 75.45 грн |
| 100+ | 67.99 грн |
| 250+ | 63.01 грн |
| 500+ | 59.70 грн |
| 1000+ | 53.89 грн |
| BSC010N04LSATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| BSC010N04LSIATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| BCR320UE6327HTSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SC74
Mounting: SMD
Operating voltage: 0...25V DC
Output current: 0.25A
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Number of channels: 1
Topology: single transistor
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SC74
Mounting: SMD
Operating voltage: 0...25V DC
Output current: 0.25A
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Number of channels: 1
Topology: single transistor
на замовлення 759 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 27.94 грн |
| BCR321UE6327HTSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 0.25A
Number of channels: 1
Mounting: SMD
Operating voltage: 0...4.5V DC
Topology: single transistor
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 0.25A
Number of channels: 1
Mounting: SMD
Operating voltage: 0...4.5V DC
Topology: single transistor
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SN7002NH6327XTSA2 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IPW60R031CFD7 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 13 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 592.88 грн |
| 3+ | 507.42 грн |
| 10+ | 475.91 грн |
| IPW60R037P7XKSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 158 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 554.49 грн |
| 2+ | 487.52 грн |
| 5+ | 430.31 грн |
| 10+ | 404.61 грн |
| IPW60R037CSFDXKSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 245W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 245W
Case: TO247-3
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 245W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 245W
Case: TO247-3
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BCV46E6327 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
на замовлення 8720 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 17.86 грн |
| 34+ | 12.35 грн |
| 100+ | 9.12 грн |
| 250+ | 8.10 грн |
| 1000+ | 6.66 грн |
| 3000+ | 5.69 грн |
| BCR112E6327HTSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Kind of transistor: BRT
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Kind of transistor: BRT
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 44.64 грн |
| BCV61BE6327 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Mounting: SMD
Case: SOT143
Collector current: 0.1A
Power dissipation: 0.3W
Type of transistor: NPN x2
Collector-emitter voltage: 30V
Polarisation: bipolar
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Mounting: SMD
Case: SOT143
Collector current: 0.1A
Power dissipation: 0.3W
Type of transistor: NPN x2
Collector-emitter voltage: 30V
Polarisation: bipolar
Frequency: 250MHz
на замовлення 928 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 30.36 грн |
| 25+ | 16.75 грн |
| 100+ | 12.44 грн |
| 250+ | 10.94 грн |
| 500+ | 9.95 грн |
| BCR505E6327 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
на замовлення 5972 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.32 грн |
| 26+ | 16.42 грн |
| 29+ | 14.59 грн |
| 100+ | 9.45 грн |
| 250+ | 7.88 грн |
| 500+ | 6.80 грн |
| 1000+ | 6.14 грн |
| 3000+ | 5.80 грн |
| BCR135E6327 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
на замовлення 372 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.61 грн |
| 53+ | 7.88 грн |
| 100+ | 5.22 грн |
| BCR185E6327 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
на замовлення 1615 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.14 грн |
| 91+ | 4.58 грн |
| 111+ | 3.76 грн |
| 250+ | 3.32 грн |
| 500+ | 3.03 грн |
| 1000+ | 2.76 грн |
| BCX71KE6327 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 11042 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 95+ | 4.71 грн |
| 106+ | 3.93 грн |
| 250+ | 3.47 грн |
| 1000+ | 3.01 грн |
| 3000+ | 2.95 грн |
| BCR148E6327 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
на замовлення 135 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 5.64 грн |
| 100+ | 4.73 грн |
| BCR533E6327HTSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 111.61 грн |
| BCR158E6327 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
| BCX70HE6327 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 1025 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 4.50 грн |
| 111+ | 3.76 грн |
| 250+ | 3.32 грн |
| 1000+ | 2.89 грн |
| BCX71HE6327 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 2380 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 7.50 грн |
| 160+ | 2.62 грн |
| 180+ | 2.35 грн |
| 500+ | 2.08 грн |
| BCR503E6327HTSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
на замовлення 3310 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 24.11 грн |
| 25+ | 17.08 грн |
| 30+ | 14.18 грн |
| 100+ | 7.43 грн |
| 250+ | 6.05 грн |
| 500+ | 5.34 грн |
| 1000+ | 4.82 грн |
| 1300+ | 4.65 грн |
| 3000+ | 4.26 грн |
| BC847SH6327XTSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.25W; SOT363
Collector-emitter voltage: 45V
Frequency: 250MHz
Polarisation: bipolar
Case: SOT363
Type of transistor: NPN x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.25W; SOT363
Collector-emitter voltage: 45V
Frequency: 250MHz
Polarisation: bipolar
Case: SOT363
Type of transistor: NPN x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
на замовлення 1081 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 14.29 грн |
| 55+ | 7.63 грн |
| 72+ | 5.80 грн |
| 100+ | 5.14 грн |
| 500+ | 4.48 грн |
| BCX71GE6327 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 2720 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 98+ | 4.57 грн |
| 109+ | 3.82 грн |
| 250+ | 3.38 грн |
| 1000+ | 2.94 грн |
| BCW67CE6327 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
на замовлення 48 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.07 грн |
| 45+ | 9.37 грн |
| 48+ | 8.29 грн |
| BCR555E6327HTSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 99.11 грн |
| 54+ | 7.71 грн |
| 100+ | 6.96 грн |
| 500+ | 5.89 грн |
| FM24VN10-G |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; I2C; 128kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Mounting: SMD
Operating temperature: -40...85°C
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of interface: serial
Supply voltage: 2...3.6V DC
Memory: 1Mb FRAM
Clock frequency: 3.4MHz
Memory organisation: 128kx8bit
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; I2C; 128kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Mounting: SMD
Operating temperature: -40...85°C
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of interface: serial
Supply voltage: 2...3.6V DC
Memory: 1Mb FRAM
Clock frequency: 3.4MHz
Memory organisation: 128kx8bit
товару немає в наявності
В кошику
од. на суму грн.
| FM24V01A-G |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; I2C; 16kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Interface: I2C
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 128kb FRAM
Clock frequency: 3.4MHz
Memory organisation: 16kx8bit
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; I2C; 16kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Interface: I2C
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 128kb FRAM
Clock frequency: 3.4MHz
Memory organisation: 16kx8bit
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
товару немає в наявності
В кошику
од. на суму грн.
| FM24V01A-GTR |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; I2C; 16kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Interface: I2C
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 128kb FRAM
Clock frequency: 3.4MHz
Memory organisation: 16kx8bit
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; I2C; 16kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Interface: I2C
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 128kb FRAM
Clock frequency: 3.4MHz
Memory organisation: 16kx8bit
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
товару немає в наявності
В кошику
од. на суму грн.
| FM24V05-GTR |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; I2C; 64kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 512kb FRAM
Interface: I2C
Memory organisation: 64kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; I2C; 64kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 512kb FRAM
Interface: I2C
Memory organisation: 64kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| FM24V02A-G |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Interface: I2C
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 256kb FRAM
Clock frequency: 3.4MHz
Memory organisation: 32kx8bit
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Interface: I2C
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 256kb FRAM
Clock frequency: 3.4MHz
Memory organisation: 32kx8bit
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
товару немає в наявності
В кошику
од. на суму грн.
| FM24V05-G |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; I2C; 64kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 512kb FRAM
Interface: I2C
Memory organisation: 64kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; I2C; 64kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 512kb FRAM
Interface: I2C
Memory organisation: 64kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| FM24V02A-GTR |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Interface: I2C
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 256kb FRAM
Clock frequency: 3.4MHz
Memory organisation: 32kx8bit
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Interface: I2C
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 256kb FRAM
Clock frequency: 3.4MHz
Memory organisation: 32kx8bit
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
товару немає в наявності
В кошику
од. на суму грн.
| FM24VN10-GTR |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; I2C; 128kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Mounting: SMD
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of interface: serial
Case: SO8
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 1Mb FRAM
Clock frequency: 3.4MHz
Memory organisation: 128kx8bit
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; I2C; 128kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Mounting: SMD
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of interface: serial
Case: SO8
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 1Mb FRAM
Clock frequency: 3.4MHz
Memory organisation: 128kx8bit
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| FM24W256-G |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2.7÷5.5VDC; 1MHz; SO8
Mounting: SMD
Operating temperature: -40...85°C
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of interface: serial
Supply voltage: 2.7...5.5V DC
Memory: 256kb FRAM
Clock frequency: 1MHz
Memory organisation: 32kx8bit
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2.7÷5.5VDC; 1MHz; SO8
Mounting: SMD
Operating temperature: -40...85°C
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of interface: serial
Supply voltage: 2.7...5.5V DC
Memory: 256kb FRAM
Clock frequency: 1MHz
Memory organisation: 32kx8bit
товару немає в наявності
Мінімальне замовлення: 970 шт
В кошику
од. на суму грн.
| FM24W256-GTR |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2.7÷5.5VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: I2C
Memory organisation: 32kx8bit
Supply voltage: 2.7...5.5V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2.7÷5.5VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: I2C
Memory organisation: 32kx8bit
Supply voltage: 2.7...5.5V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BAT165E6327HTSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.75A
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.75A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.75A
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.75A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
на замовлення 2894 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 28.57 грн |
| 22+ | 19.48 грн |
| 50+ | 13.43 грн |
| 100+ | 11.44 грн |
| 500+ | 8.13 грн |
| 1000+ | 7.13 грн |
| IPA65R400CEXKSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15.1A; 31W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 39nC
On-state resistance: 0.36Ω
Drain current: 15.1A
Power dissipation: 31W
Drain-source voltage: 650V
Case: TO220FP
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15.1A; 31W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 39nC
On-state resistance: 0.36Ω
Drain current: 15.1A
Power dissipation: 31W
Drain-source voltage: 650V
Case: TO220FP
Kind of channel: enhancement
на замовлення 92 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 94.65 грн |
| 10+ | 55.47 грн |
| 15+ | 53.15 грн |
| 50+ | 46.93 грн |
| CY15B128J-SXA |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; I2C; 16kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 128kb FRAM
Clock frequency: 3.4MHz
Memory organisation: 16kx8bit
Kind of memory: FRAM
Interface: I2C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; I2C; 16kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 128kb FRAM
Clock frequency: 3.4MHz
Memory organisation: 16kx8bit
Kind of memory: FRAM
Interface: I2C
товару немає в наявності
Мінімальне замовлення: 970 шт
В кошику
од. на суму грн.
| CY15B128J-SXAT |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; I2C; 16kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 128kb FRAM
Clock frequency: 3.4MHz
Memory organisation: 16kx8bit
Kind of memory: FRAM
Interface: I2C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; I2C; 16kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 128kb FRAM
Clock frequency: 3.4MHz
Memory organisation: 16kx8bit
Kind of memory: FRAM
Interface: I2C
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| CY15B128Q-SXA |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Type of integrated circuit: FRAM memory
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 128kb FRAM
Clock frequency: 40MHz
Memory organisation: 16kx8bit
Kind of memory: FRAM
Interface: SPI
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Type of integrated circuit: FRAM memory
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 128kb FRAM
Clock frequency: 40MHz
Memory organisation: 16kx8bit
Kind of memory: FRAM
Interface: SPI
товару немає в наявності
Мінімальне замовлення: 485 шт
В кошику
од. на суму грн.
| CY15B128Q-SXAT |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Type of integrated circuit: FRAM memory
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 128kb FRAM
Clock frequency: 40MHz
Memory organisation: 16kx8bit
Kind of memory: FRAM
Interface: SPI
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Type of integrated circuit: FRAM memory
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 128kb FRAM
Clock frequency: 40MHz
Memory organisation: 16kx8bit
Kind of memory: FRAM
Interface: SPI
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| CY15B128Q-SXE |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2.7÷3.6VDC; 33MHz; SOIC8
Type of integrated circuit: FRAM memory
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 2.7...3.6V DC
Memory: 128kb FRAM
Clock frequency: 33MHz
Memory organisation: 16kx8bit
Kind of memory: FRAM
Interface: SPI
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2.7÷3.6VDC; 33MHz; SOIC8
Type of integrated circuit: FRAM memory
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 2.7...3.6V DC
Memory: 128kb FRAM
Clock frequency: 33MHz
Memory organisation: 16kx8bit
Kind of memory: FRAM
Interface: SPI
товару немає в наявності
Мінімальне замовлення: 485 шт
В кошику
од. на суму грн.
| CY15B128Q-SXET |
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2.7÷3.6VDC; 33MHz; SOIC8
Type of integrated circuit: FRAM memory
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 2.7...3.6V DC
Memory: 128kb FRAM
Clock frequency: 33MHz
Memory organisation: 16kx8bit
Kind of memory: FRAM
Interface: SPI
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2.7÷3.6VDC; 33MHz; SOIC8
Type of integrated circuit: FRAM memory
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 2.7...3.6V DC
Memory: 128kb FRAM
Clock frequency: 33MHz
Memory organisation: 16kx8bit
Kind of memory: FRAM
Interface: SPI
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| FM18W08-SG |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 2.7÷5.5VDC
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: parallel 8bit
Memory organisation: 32kx8bit
Supply voltage: 2.7...5.5V DC
Access time: 70ns
Case: SO28
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 2.7÷5.5VDC
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: parallel 8bit
Memory organisation: 32kx8bit
Supply voltage: 2.7...5.5V DC
Access time: 70ns
Case: SO28
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| IPP023N08N5AKSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BCX42E6327 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
на замовлення 903 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.22 грн |
| 29+ | 14.34 грн |
| 100+ | 8.87 грн |
| 250+ | 7.38 грн |
| 500+ | 6.38 грн |
| IRFS4310ZTRLPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IAUC100N08S5N031ATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
Technology: OptiMOS™ 5
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 3.1mΩ
Mounting: SMD
Pulsed drain current: 400A
Power dissipation: 167W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
Technology: OptiMOS™ 5
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 3.1mΩ
Mounting: SMD
Pulsed drain current: 400A
Power dissipation: 167W
Polarisation: unipolar
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IAUC100N08S5N034ATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
Technology: OptiMOS™ 5
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 4.8mΩ
Mounting: SMD
Pulsed drain current: 400A
Power dissipation: 136W
Gate charge: 66nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
Technology: OptiMOS™ 5
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 4.8mΩ
Mounting: SMD
Pulsed drain current: 400A
Power dissipation: 136W
Gate charge: 66nC
Polarisation: unipolar
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IAUC100N08S5N043ATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
Technology: OptiMOS™ 5
Drain current: 76A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 4.3mΩ
Mounting: SMD
Pulsed drain current: 400A
Power dissipation: 120W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
Technology: OptiMOS™ 5
Drain current: 76A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 4.3mΩ
Mounting: SMD
Pulsed drain current: 400A
Power dissipation: 120W
Polarisation: unipolar
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IPB80N08S2L07ATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 183nC
Kind of channel: enhancement
Technology: OptiMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 183nC
Kind of channel: enhancement
Technology: OptiMOS™
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IAUA180N08S5N026AUMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 25A; Idm: 546A; 179W; PG-HSOF-5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 25A
Pulsed drain current: 546A
Power dissipation: 179W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 25A; Idm: 546A; 179W; PG-HSOF-5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 25A
Pulsed drain current: 546A
Power dissipation: 179W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IRFP3077PBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; 340W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Gate charge: 160nC
Technology: HEXFET®
Power dissipation: 340W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; 340W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Gate charge: 160nC
Technology: HEXFET®
Power dissipation: 340W
товару немає в наявності
В кошику
од. на суму грн.
| IRFU120NPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.1A
Power dissipation: 39W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 16.7nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.1A
Power dissipation: 39W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 16.7nC
Kind of channel: enhancement
на замовлення 1410 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 71.43 грн |
| 11+ | 39.96 грн |
| 25+ | 36.15 грн |
| 50+ | 33.33 грн |
| 75+ | 31.67 грн |
| 150+ | 31.09 грн |
| CY15B104Q-LHXIT |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 2÷3.6VDC; 40MHz; TDFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4Mb FRAM
Interface: SPI
Memory organisation: 512kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: TDFN8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 2÷3.6VDC; 40MHz; TDFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4Mb FRAM
Interface: SPI
Memory organisation: 512kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: TDFN8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| CY15B104Q-SXIT |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4Mb FRAM
Interface: SPI
Memory organisation: 512kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4Mb FRAM
Interface: SPI
Memory organisation: 512kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| FM1808B-SGTR |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 4.5÷5.5VDC
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Interface: parallel 8bit
Kind of interface: parallel
Mounting: SMD
Case: SO28
Operating temperature: -40...85°C
Access time: 70ns
Supply voltage: 4.5...5.5V DC
Memory: 256kb FRAM
Memory organisation: 32kx8bit
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 4.5÷5.5VDC
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Interface: parallel 8bit
Kind of interface: parallel
Mounting: SMD
Case: SO28
Operating temperature: -40...85°C
Access time: 70ns
Supply voltage: 4.5...5.5V DC
Memory: 256kb FRAM
Memory organisation: 32kx8bit
товару немає в наявності
В кошику
од. на суму грн.






















