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CY7C65211A-24LTXIT INFINEON TECHNOLOGIES Infineon-CY7C65211_USB.pdf Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO x10,I2C,SPI,UART; USB controller; Full Speed
Interface: GPIO x10; I2C; SPI; UART
Case: QFN24
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Data transfer rate: 12Mbps
Integrated circuit features: bridge
USB speed: Full Speed
Kind of integrated circuit: USB controller
Type of integrated circuit: interface
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CY7C65215A-32LTXIT INFINEON TECHNOLOGIES Infineon-CY7C65215_CY7C65215A.pdf Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO x17,I2C,SPI,UART; USB controller; Full Speed
Interface: GPIO x17; I2C; SPI; UART
Case: QFN32
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Data transfer rate: 12Mbps
Integrated circuit features: bridge
USB speed: Full Speed
Kind of integrated circuit: USB controller
Type of integrated circuit: interface
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1EDC30I12MHXUMA1 1EDC30I12MHXUMA1 INFINEON TECHNOLOGIES 1EDCxxI12MH.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Mounting: SMD
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Kind of package: reel; tape
Output current: -3...3A
Supply voltage: 3.1...17V; 13...18V
Number of channels: 1
Voltage class: 600/650/1200V
Integrated circuit features: active Miller clamp; galvanically isolated
Case: PG-DSO-8
Type of integrated circuit: driver
Technology: EiceDRIVER™
на замовлення 982 шт:
термін постачання 14-30 дні (днів)
3+183.34 грн
10+152.63 грн
Мінімальне замовлення: 3
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1EDC10I12MHXUMA1 1EDC10I12MHXUMA1 INFINEON TECHNOLOGIES 1EDCxxI12MH.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Mounting: SMD
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Kind of package: reel; tape
Output current: -1...1A
Supply voltage: 3.1...17V; 13...18V
Number of channels: 1
Voltage class: 600/650/1200V
Integrated circuit features: active Miller clamp; galvanically isolated
Case: PG-DSO-8
Type of integrated circuit: driver
Technology: EiceDRIVER™
на замовлення 22 шт:
термін постачання 14-30 дні (днів)
3+208.63 грн
5+174.44 грн
Мінімальне замовлення: 3
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IRL100HS121 IRL100HS121 INFINEON TECHNOLOGIES IRL100HS121.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.8A; 5.8W; PQFN2X2
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.8A
Power dissipation: 5.8W
Case: PQFN2X2
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel
Kind of channel: enhancement
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IPA95R1K2P7XKSA1 IPA95R1K2P7XKSA1 INFINEON TECHNOLOGIES IPA95R1K2P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 27W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.7A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 84 шт:
термін постачання 14-30 дні (днів)
4+128.25 грн
10+70.45 грн
50+59.54 грн
Мінімальне замовлення: 4
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IDW10G65C5XKSA1 IDW10G65C5XKSA1 INFINEON TECHNOLOGIES IDW10G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a304339dcf4b10139fc597c6800fc Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO247-3; Ir: 2uA
Max. off-state voltage: 650V
Load current: 10A
Max. forward impulse current: 46A
Case: PG-TO247-3
Max. forward voltage: 1.8V
Kind of package: tube
Semiconductor structure: single diode
Mounting: THT
Leakage current: 2µA
Power dissipation: 65W
Technology: CoolSiC™ 5G; SiC
Type of diode: Schottky rectifying
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S29GL256S10FHI020 INFINEON TECHNOLOGIES S29GL_128S_01GS_00.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
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BSC520N15NS3GATMA1 BSC520N15NS3GATMA1 INFINEON TECHNOLOGIES BSC520N15NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 57W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of channel: enhancement
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IFX007TAUMA1
+1
 		IFX007TAUMA1 INFINEON TECHNOLOGIES IFX007T.pdf Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: IMC; motor controller
Technology: NovalithIC™
Case: PG-TO263-7
Output current: 9A
Number of channels: 1
Mounting: SMD
On-state resistance: 10mΩ
Operating temperature: -40...150°C
Application: DC motors
Operating voltage: 5.5...40V DC
Kind of package: reel; tape
на замовлення 472 шт:
термін постачання 14-30 дні (днів)
3+217.66 грн
5+173.60 грн
10+156.83 грн
25+154.31 грн
Мінімальне замовлення: 3
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S25HS02GTDPBHB053 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 133MHz
Memory: 2Gb FLASH
Application: automotive
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
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S25HS02GTDPBHV053 INFINEON TECHNOLOGIES infineon-s25hs02gt-s25hs04gt-s25hl02gt-s25hl04gt-2-gb-ddp4-gb-qdp-semper-flash-with-quad-spi-1-8-v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ee8d76471ad&utm_source=cypress&utm_medium=referral Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 133MHz
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
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S28HS02GTFPBHV050 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Interface: octal
Kind of interface: serial
Operating frequency: 166MHz
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
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IPB107N20NAATMA1 IPB107N20NAATMA1 INFINEON TECHNOLOGIES IPB107N20NA-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 10.7mΩ
Gate-source voltage: ±20V
Drain current: 88A
Drain-source voltage: 200V
Power dissipation: 300W
Technology: OptiMOS™ 3
Kind of channel: enhancement
на замовлення 655 шт:
термін постачання 14-30 дні (днів)
1+464.22 грн
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TLD2314ELXUMA1 TLD2314ELXUMA1 INFINEON TECHNOLOGIES TLD2314EL.pdf Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 120mA
Protection: overheating OTP
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Integrated circuit features: linear dimming; PWM
Technology: Litix™
Mounting: SMD
Case: PG-SSOP-14-EP
Output current: 0.12A
Number of channels: 3
Operating voltage: 5.5...40V DC
на замовлення 2497 шт:
термін постачання 14-30 дні (днів)
7+72.25 грн
Мінімальне замовлення: 7
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BAS3005S02LRHE6327XTSA1 INFINEON TECHNOLOGIES bas3005s-02lrh.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a30431ed1d7b2011f403b235b4ec0 Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
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IKCM30F60GAXKMA1 IKCM30F60GAXKMA1 INFINEON TECHNOLOGIES IKCM30F60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Mounting: THT
Frequency: 20kHz
Power dissipation: 30.3W
Operating voltage: 13.5...18.5/0...400V DC
Kind of integrated circuit: 3-phase motor controller; IPM
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Integrated circuit features: integrated bootstrap functionality
Operating temperature: -40...125°C
Output current: -20...20A
на замовлення 27 шт:
термін постачання 14-30 дні (днів)
1+1085.60 грн
5+931.74 грн
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IGCM20F60GAXKMA1
+1
 		IGCM20F60GAXKMA1 INFINEON TECHNOLOGIES IGCM20F60GAXKMA1.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; -20÷20A; 20kHz
Mounting: THT
Frequency: 20kHz
Operating voltage: 13.5...18.5/0...400V DC
Kind of integrated circuit: 3-phase motor controller; IPM
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: DIP 36x21 (PG-DIP-24)
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Integrated circuit features: integrated bootstrap functionality
Kind of package: tube
Operating temperature: -40...125°C
Output current: -20...20A
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
1+889.61 грн
5+710.34 грн
10+665.89 грн
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IKCM10L60GAXKMA1 IKCM10L60GAXKMA1 INFINEON TECHNOLOGIES IKCM10L60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Mounting: THT
Frequency: 20kHz
Power dissipation: 25.2W
Operating voltage: 13.5...18.5/0...400V DC
Kind of integrated circuit: 3-phase motor controller; IPM
Voltage class: 600V
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Integrated circuit features: integrated bootstrap functionality
Operating temperature: -40...125°C
Output current: -10...10A
на замовлення 280 шт:
термін постачання 14-30 дні (днів)
280+541.90 грн
Мінімальне замовлення: 280
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SPW20N60CFDFKSA1 INFINEON TECHNOLOGIES SPW20N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c02c5464d Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 20.7A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 20.7A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 124nC
на замовлення 324 шт:
термін постачання 14-30 дні (днів)
30+289.01 грн
120+241.53 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
IDD03SG60CXTMA2 INFINEON TECHNOLOGIES Infineon-IDD03SG60C-DS-v02_04-en.pdf?fileId=db3a304327b897500127dcb296f11a53 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
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IDD03SG60C IDD03SG60C INFINEON TECHNOLOGIES IDD03SG60C.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 3A; 38W
Type of diode: Schottky rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Leakage current: 0.23µA
Max. forward voltage: 2.1V
Load current: 3A
Max. forward impulse current: 9.7A
Power dissipation: 38W
Technology: CoolSiC™ 3G; SiC
Max. off-state voltage: 0.6kV
Case: PG-TO252-3
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PVI1050NPBFHKLA1 INFINEON TECHNOLOGIES Infineon-PVI1050N-DataSheet-v02_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
на замовлення 1750 шт:
термін постачання 14-30 дні (днів)
50+497.64 грн
Мінімальне замовлення: 50
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IPG20N10S4L35ATMA1 INFINEON TECHNOLOGIES Infineon-IPG20N10S4L_35-DS-v01_01-en.pdf?fileId=db3a3043372d5cc8013750d7337e05fd Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 100V; 17A; Idm: 80A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 80A
Power dissipation: 43W
Case: PG-TDSON-8-4
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ T2
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IPB020N10N5LF IPB020N10N5LF INFINEON TECHNOLOGIES IPB020N10N5LF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 313W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IPT020N10N3ATMA1 IPT020N10N3ATMA1 INFINEON TECHNOLOGIES IPT020N10N3-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 212A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 212A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tape
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IPB020N10N5ATMA1 IPB020N10N5ATMA1 INFINEON TECHNOLOGIES IPB020N10N5-dte.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
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DD1600S33HE4BPSA1 INFINEON TECHNOLOGIES Infineon-DD1600S33HE4-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191eaef415b350e Category: Diodes - others
Description: Module: diode
Type of semiconductor module: diode
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IMW65R027M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMW65R027M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85ab88170463 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 185A; 189W
Mounting: THT
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...23V
On-state resistance: 35mΩ
Drain current: 39A
Pulsed drain current: 185A
Power dissipation: 189W
Drain-source voltage: 650V
Case: TO247
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IMZA65R027M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMZA65R027M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d997f90532 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 41A; Idm: 184A; 189W
Mounting: THT
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...23V
On-state resistance: 35mΩ
Drain current: 41A
Pulsed drain current: 184A
Power dissipation: 189W
Drain-source voltage: 650V
Case: TO247-4
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1EDB6275FXUMA1 INFINEON TECHNOLOGIES infineon-1edb7275f-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side; SOIC8; 9A; Ch: 1; MOSFET; 1.38W
Operating temperature: -40...125°C
Case: SOIC8
Pulse fall time: 5ns
Impulse rise time: 8.3ns
Number of channels: 1
Power dissipation: 1.38W
Kind of integrated circuit: high-side
Topology: H-bridge
Type of integrated circuit: driver
Output current: 9A
Maximum output current: 9A
Integrated circuit features: MOSFET
Mounting: SMD
на замовлення 97500 шт:
термін постачання 14-30 дні (днів)
2500+58.98 грн
Мінімальне замовлення: 2500
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2ED21094S06JXUMA1 INFINEON TECHNOLOGIES Infineon-2ED2109-4-S06F-J-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016cb8d7493e29eb Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Mounting: SMD
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -0.7...0.29A
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 650V
Type of integrated circuit: driver
Case: PG-DSO-14
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TLE9250SJXUMA1 TLE9250SJXUMA1 INFINEON TECHNOLOGIES TLE9250.pdf Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN-FD
Type of integrated circuit: CAN transceiver
Case: PG-DSO-8
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TZ800N16KOFHPSA3 INFINEON TECHNOLOGIES TZ800N16KOF.pdf Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 819A; BG-PB70AT-1
Case: BG-PB70AT-1
Gate current: 250mA
Max. forward voltage: 1.51V
Load current: 819A
Max. forward impulse current: 35kA
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Semiconductor structure: single thyristor
Type of semiconductor module: thyristor
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TZ810N22KOFHPSA2 INFINEON TECHNOLOGIES TZ810N22KOF.pdf Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 819A; BG-PB70AT-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 2.2kV
Load current: 819A
Case: BG-PB70AT-1
Max. forward voltage: 1.51V
Max. forward impulse current: 39kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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TZ800N18KOFHPSA3 INFINEON TECHNOLOGIES TZ800N18KOF.pdf Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 819A; BG-PB70AT-1
Case: BG-PB70AT-1
Gate current: 250mA
Max. forward voltage: 1.51V
Load current: 819A
Max. forward impulse current: 35kA
Max. off-state voltage: 1.8kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Semiconductor structure: single thyristor
Type of semiconductor module: thyristor
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BTS3018TCATMA1 INFINEON TECHNOLOGIES Infineon-BTS3018TC-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aadcb19894c31 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 6A; Ch: 1; N-Channel; SMD; PG-TO263
Type of integrated circuit: power switch
Kind of output: N-Channel
Case: PG-TO263
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
On-state resistance: 18mΩ
Number of channels: 1
Output current: 6A
Technology: HITFET®
Output voltage: 60V
Kind of integrated circuit: low-side
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BTS3018TCATMA1 INFINEON TECHNOLOGIES Infineon-BTS3018TC-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aadcb19894c31 Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
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BSS215PH6327XTSA1 BSS215PH6327XTSA1 INFINEON TECHNOLOGIES BSS215PH6327-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.5W; PG-SOT23
Mounting: SMD
Type of transistor: P-MOSFET
Technology: OptiMOS™ P2
Gate-source voltage: ±12V
Kind of channel: enhancement
Case: PG-SOT23
Drain current: -1.5A
Drain-source voltage: -20V
On-state resistance: 0.15Ω
Polarisation: unipolar
Power dissipation: 0.5W
на замовлення 1234 шт:
термін постачання 14-30 дні (днів)
16+29.80 грн
22+19.62 грн
50+13.25 грн
100+11.24 грн
500+7.88 грн
1000+6.96 грн
Мінімальне замовлення: 16
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TLD22522EPXUMA1 INFINEON TECHNOLOGIES Infineon-TLD2252-2EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626da6c043016dba1517ee6995 Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-TSDSO-14; 60÷120mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-TSDSO-14
Output current: 60...120mA
Number of channels: 2
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
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BSC0924NDIATMA1 BSC0924NDIATMA1 INFINEON TECHNOLOGIES BSC0924NDI-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 2.5W; PG-TISON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 2.5W
Case: PG-TISON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
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IPB107N20N3GATMA1 IPB107N20N3GATMA1 INFINEON TECHNOLOGIES IPB107N20N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 10.7mΩ
Gate-source voltage: ±20V
Drain current: 88A
Drain-source voltage: 200V
Power dissipation: 300W
Technology: OptiMOS™ 3
Kind of channel: enhancement
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AIMW120R045M1XKSA1 INFINEON TECHNOLOGIES Infineon-AIMW120R045M1-DataSheet-v03_00-EN.pdf?fileId=5546d4626e8d4b8f016e9304fd2e66c4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 130A
Power dissipation: 114W
Case: TO247
Gate-source voltage: -7...20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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AIMW120R045M1XKSA1 AIMW120R045M1XKSA1 INFINEON TECHNOLOGIES AIMW120R045M1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 130A
Power dissipation: 114W
Case: TO247
Gate-source voltage: -7...20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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CY7C1612KV18-250BZXC INFINEON TECHNOLOGIES Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 250MHz
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CY7C1612KV18-300BZXI INFINEON TECHNOLOGIES Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 300MHz
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CY7C1612KV18-360BZXC INFINEON TECHNOLOGIES Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 360MHz
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CY7C1615KV18-250BZXC INFINEON TECHNOLOGIES Infineon-CY7C1613KV18_CY7C1615KV18_144-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec23aab3726 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 4Mx36bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 4Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 250MHz
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CY7C1618KV18-333BZXC INFINEON TECHNOLOGIES Infineon-CY7C1618KV18_CY7C1620KV18_144-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec241b9372f Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
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IRFR48ZTRLPBF INFINEON TECHNOLOGIES irfr48zpbf.pdf?fileId=5546d462533600a40153563243f020fa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 91W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Power dissipation: 91W
Case: DPAK; TO252
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 40nC
Kind of channel: enhancement
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BTS500101TAEATMA1
+1
 		BTS500101TAEATMA1 INFINEON TECHNOLOGIES BTS500101TAE.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 40A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 40A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO263-7-10
On-state resistance: 1.6mΩ
Supply voltage: 8...18V DC
Technology: Power PROFET
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CY8C3446LTI-085 INFINEON TECHNOLOGIES download Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 50MHz; 64kBFLASH; Architecture: 8051
Type of integrated circuit: ARM microcontroller
Clock frequency: 50MHz
Memory: 64kB FLASH
Number of inputs/outputs: 38
Number of PWM channels: 1
Number of 16bit timers: 4
Mounting: SMD
Interface: I2C; SPI; UART; USB
Integrated circuit features: DMA; internal clock oscillator; PoR; PWM
Kind of architecture: 8051
Operating temperature: -40...85°C
Kind of core: 8-bit
Peripherial: DMA; POR
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IAUA180N04S5N012AUMA1 INFINEON TECHNOLOGIES Infineon-IAUA180N04S5N012-DataSheet-v01_10-EN.pdf?fileId=5546d4626bb628d7016bc20182c67740 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 720A; 125W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 125W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
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CY14V116G7-BZ30XIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 30ns; FBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 30ns
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC; 2.7...3.6V DC
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TLE4291EXUMA2 TLE4291EXUMA2 INFINEON TECHNOLOGIES Infineon-TLE4291E-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101595fa0b06f1fce Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-SSOP-14-EP
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.45A
Case: PG-SSOP-14-EP
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of channels: 1
Input voltage: 3.3...42V
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IRFR1010ZTRPBF IRFR1010ZTRPBF INFINEON TECHNOLOGIES irfr1010zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 91A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 91A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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GS0650306LLMRXUMA1 INFINEON TECHNOLOGIES Infineon-GS-065-030-6-LL-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e603d2dfc Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
250+539.19 грн
Мінімальне замовлення: 250
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FP25R12KE3BPSA1 INFINEON TECHNOLOGIES Infineon-FP25R12KE3-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b430a9545185 Category: IGBT modules
Description: Module: IGBT; Ic: 40A; ECONO2
Type of semiconductor module: IGBT
Collector current: 40A
Case: ECONO2
Gate-emitter voltage: ±20V
на замовлення 290 шт:
термін постачання 14-30 дні (днів)
15+5288.91 грн
Мінімальне замовлення: 15
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BC847PNH6433XTMA1 BC847PNH6433XTMA1 INFINEON TECHNOLOGIES BC846PNH6327.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Polarisation: bipolar
Kind of transistor: complementary pair
Case: SOT363
Type of transistor: NPN / PNP
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 45V
Frequency: 250MHz
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2EDN7524RXTMA1 INFINEON TECHNOLOGIES infineon-2edl50x3u2d-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
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CY7C65211A-24LTXIT Infineon-CY7C65211_USB.pdf
Виробник: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO x10,I2C,SPI,UART; USB controller; Full Speed
Interface: GPIO x10; I2C; SPI; UART
Case: QFN24
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Data transfer rate: 12Mbps
Integrated circuit features: bridge
USB speed: Full Speed
Kind of integrated circuit: USB controller
Type of integrated circuit: interface
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CY7C65215A-32LTXIT Infineon-CY7C65215_CY7C65215A.pdf
Виробник: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO x17,I2C,SPI,UART; USB controller; Full Speed
Interface: GPIO x17; I2C; SPI; UART
Case: QFN32
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Data transfer rate: 12Mbps
Integrated circuit features: bridge
USB speed: Full Speed
Kind of integrated circuit: USB controller
Type of integrated circuit: interface
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1EDC30I12MHXUMA1 1EDCxxI12MH.pdf
1EDC30I12MHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Mounting: SMD
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Kind of package: reel; tape
Output current: -3...3A
Supply voltage: 3.1...17V; 13...18V
Number of channels: 1
Voltage class: 600/650/1200V
Integrated circuit features: active Miller clamp; galvanically isolated
Case: PG-DSO-8
Type of integrated circuit: driver
Technology: EiceDRIVER™
на замовлення 982 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+183.34 грн
10+152.63 грн
Мінімальне замовлення: 3
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1EDC10I12MHXUMA1 1EDCxxI12MH.pdf
1EDC10I12MHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Mounting: SMD
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Kind of package: reel; tape
Output current: -1...1A
Supply voltage: 3.1...17V; 13...18V
Number of channels: 1
Voltage class: 600/650/1200V
Integrated circuit features: active Miller clamp; galvanically isolated
Case: PG-DSO-8
Type of integrated circuit: driver
Technology: EiceDRIVER™
на замовлення 22 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+208.63 грн
5+174.44 грн
Мінімальне замовлення: 3
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IRL100HS121 IRL100HS121.pdf
IRL100HS121
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.8A; 5.8W; PQFN2X2
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.8A
Power dissipation: 5.8W
Case: PQFN2X2
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel
Kind of channel: enhancement
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IPA95R1K2P7XKSA1 IPA95R1K2P7.pdf
IPA95R1K2P7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.7A; 27W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.7A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 84 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+128.25 грн
10+70.45 грн
50+59.54 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IDW10G65C5XKSA1 IDW10G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a304339dcf4b10139fc597c6800fc
IDW10G65C5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO247-3; Ir: 2uA
Max. off-state voltage: 650V
Load current: 10A
Max. forward impulse current: 46A
Case: PG-TO247-3
Max. forward voltage: 1.8V
Kind of package: tube
Semiconductor structure: single diode
Mounting: THT
Leakage current: 2µA
Power dissipation: 65W
Technology: CoolSiC™ 5G; SiC
Type of diode: Schottky rectifying
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S29GL256S10FHI020 S29GL_128S_01GS_00.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
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BSC520N15NS3GATMA1 BSC520N15NS3G-DTE.pdf
BSC520N15NS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 57W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of channel: enhancement
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IFX007TAUMA1 IFX007T.pdf
IFX007TAUMA1
+1
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: IMC; motor controller
Technology: NovalithIC™
Case: PG-TO263-7
Output current: 9A
Number of channels: 1
Mounting: SMD
On-state resistance: 10mΩ
Operating temperature: -40...150°C
Application: DC motors
Operating voltage: 5.5...40V DC
Kind of package: reel; tape
на замовлення 472 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+217.66 грн
5+173.60 грн
10+156.83 грн
25+154.31 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
S25HS02GTDPBHB053
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 133MHz
Memory: 2Gb FLASH
Application: automotive
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
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S25HS02GTDPBHV053 infineon-s25hs02gt-s25hs04gt-s25hl02gt-s25hl04gt-2-gb-ddp4-gb-qdp-semper-flash-with-quad-spi-1-8-v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ee8d76471ad&utm_source=cypress&utm_medium=referral
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 133MHz
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
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S28HS02GTFPBHV050
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Interface: octal
Kind of interface: serial
Operating frequency: 166MHz
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
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IPB107N20NAATMA1 IPB107N20NA-DTE.pdf
IPB107N20NAATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 10.7mΩ
Gate-source voltage: ±20V
Drain current: 88A
Drain-source voltage: 200V
Power dissipation: 300W
Technology: OptiMOS™ 3
Kind of channel: enhancement
на замовлення 655 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+464.22 грн
В кошику  од. на суму  грн.
TLD2314ELXUMA1 TLD2314EL.pdf
TLD2314ELXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 120mA
Protection: overheating OTP
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Integrated circuit features: linear dimming; PWM
Technology: Litix™
Mounting: SMD
Case: PG-SSOP-14-EP
Output current: 0.12A
Number of channels: 3
Operating voltage: 5.5...40V DC
на замовлення 2497 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+72.25 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BAS3005S02LRHE6327XTSA1 bas3005s-02lrh.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a30431ed1d7b2011f403b235b4ec0
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
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IKCM30F60GAXKMA1 IKCM30F60GA.pdf
IKCM30F60GAXKMA1
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Mounting: THT
Frequency: 20kHz
Power dissipation: 30.3W
Operating voltage: 13.5...18.5/0...400V DC
Kind of integrated circuit: 3-phase motor controller; IPM
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Integrated circuit features: integrated bootstrap functionality
Operating temperature: -40...125°C
Output current: -20...20A
на замовлення 27 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1085.60 грн
5+931.74 грн
В кошику  од. на суму  грн.
IGCM20F60GAXKMA1 IGCM20F60GAXKMA1.pdf
IGCM20F60GAXKMA1
+1
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; -20÷20A; 20kHz
Mounting: THT
Frequency: 20kHz
Operating voltage: 13.5...18.5/0...400V DC
Kind of integrated circuit: 3-phase motor controller; IPM
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: DIP 36x21 (PG-DIP-24)
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Integrated circuit features: integrated bootstrap functionality
Kind of package: tube
Operating temperature: -40...125°C
Output current: -20...20A
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+889.61 грн
5+710.34 грн
10+665.89 грн
В кошику  од. на суму  грн.
IKCM10L60GAXKMA1 IKCM10L60GA.pdf
IKCM10L60GAXKMA1
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Mounting: THT
Frequency: 20kHz
Power dissipation: 25.2W
Operating voltage: 13.5...18.5/0...400V DC
Kind of integrated circuit: 3-phase motor controller; IPM
Voltage class: 600V
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Integrated circuit features: integrated bootstrap functionality
Operating temperature: -40...125°C
Output current: -10...10A
на замовлення 280 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
280+541.90 грн
Мінімальне замовлення: 280
В кошику  од. на суму  грн.
SPW20N60CFDFKSA1 SPW20N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c02c5464d
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 20.7A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 20.7A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 124nC
на замовлення 324 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
30+289.01 грн
120+241.53 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
IDD03SG60CXTMA2 Infineon-IDD03SG60C-DS-v02_04-en.pdf?fileId=db3a304327b897500127dcb296f11a53
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
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IDD03SG60C IDD03SG60C.pdf
IDD03SG60C
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 3A; 38W
Type of diode: Schottky rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Leakage current: 0.23µA
Max. forward voltage: 2.1V
Load current: 3A
Max. forward impulse current: 9.7A
Power dissipation: 38W
Technology: CoolSiC™ 3G; SiC
Max. off-state voltage: 0.6kV
Case: PG-TO252-3
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PVI1050NPBFHKLA1 Infineon-PVI1050N-DataSheet-v02_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca
Виробник: INFINEON TECHNOLOGIES
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
на замовлення 1750 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
50+497.64 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
IPG20N10S4L35ATMA1 Infineon-IPG20N10S4L_35-DS-v01_01-en.pdf?fileId=db3a3043372d5cc8013750d7337e05fd
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 100V; 17A; Idm: 80A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 80A
Power dissipation: 43W
Case: PG-TDSON-8-4
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ T2
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IPB020N10N5LF IPB020N10N5LF.pdf
IPB020N10N5LF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 313W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IPT020N10N3ATMA1 IPT020N10N3-DTE.pdf
IPT020N10N3ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 212A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 212A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tape
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IPB020N10N5ATMA1 IPB020N10N5-dte.pdf
IPB020N10N5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
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DD1600S33HE4BPSA1 Infineon-DD1600S33HE4-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191eaef415b350e
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Module: diode
Type of semiconductor module: diode
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IMW65R027M1HXKSA1 Infineon-IMW65R027M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85ab88170463
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 185A; 189W
Mounting: THT
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...23V
On-state resistance: 35mΩ
Drain current: 39A
Pulsed drain current: 185A
Power dissipation: 189W
Drain-source voltage: 650V
Case: TO247
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IMZA65R027M1HXKSA1 Infineon-IMZA65R027M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d997f90532
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 41A; Idm: 184A; 189W
Mounting: THT
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...23V
On-state resistance: 35mΩ
Drain current: 41A
Pulsed drain current: 184A
Power dissipation: 189W
Drain-source voltage: 650V
Case: TO247-4
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1EDB6275FXUMA1 infineon-1edb7275f-datasheet-en.pdf
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side; SOIC8; 9A; Ch: 1; MOSFET; 1.38W
Operating temperature: -40...125°C
Case: SOIC8
Pulse fall time: 5ns
Impulse rise time: 8.3ns
Number of channels: 1
Power dissipation: 1.38W
Kind of integrated circuit: high-side
Topology: H-bridge
Type of integrated circuit: driver
Output current: 9A
Maximum output current: 9A
Integrated circuit features: MOSFET
Mounting: SMD
на замовлення 97500 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2500+58.98 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
2ED21094S06JXUMA1 Infineon-2ED2109-4-S06F-J-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016cb8d7493e29eb
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Mounting: SMD
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -0.7...0.29A
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 650V
Type of integrated circuit: driver
Case: PG-DSO-14
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TLE9250SJXUMA1 TLE9250.pdf
TLE9250SJXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN-FD
Type of integrated circuit: CAN transceiver
Case: PG-DSO-8
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TZ800N16KOFHPSA3 TZ800N16KOF.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 819A; BG-PB70AT-1
Case: BG-PB70AT-1
Gate current: 250mA
Max. forward voltage: 1.51V
Load current: 819A
Max. forward impulse current: 35kA
Max. off-state voltage: 1.6kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Semiconductor structure: single thyristor
Type of semiconductor module: thyristor
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TZ810N22KOFHPSA2 TZ810N22KOF.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 819A; BG-PB70AT-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 2.2kV
Load current: 819A
Case: BG-PB70AT-1
Max. forward voltage: 1.51V
Max. forward impulse current: 39kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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TZ800N18KOFHPSA3 TZ800N18KOF.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 819A; BG-PB70AT-1
Case: BG-PB70AT-1
Gate current: 250mA
Max. forward voltage: 1.51V
Load current: 819A
Max. forward impulse current: 35kA
Max. off-state voltage: 1.8kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Semiconductor structure: single thyristor
Type of semiconductor module: thyristor
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BTS3018TCATMA1 Infineon-BTS3018TC-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aadcb19894c31
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 6A; Ch: 1; N-Channel; SMD; PG-TO263
Type of integrated circuit: power switch
Kind of output: N-Channel
Case: PG-TO263
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
On-state resistance: 18mΩ
Number of channels: 1
Output current: 6A
Technology: HITFET®
Output voltage: 60V
Kind of integrated circuit: low-side
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BTS3018TCATMA1 Infineon-BTS3018TC-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aadcb19894c31
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
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BSS215PH6327XTSA1 BSS215PH6327-DTE.pdf
BSS215PH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.5W; PG-SOT23
Mounting: SMD
Type of transistor: P-MOSFET
Technology: OptiMOS™ P2
Gate-source voltage: ±12V
Kind of channel: enhancement
Case: PG-SOT23
Drain current: -1.5A
Drain-source voltage: -20V
On-state resistance: 0.15Ω
Polarisation: unipolar
Power dissipation: 0.5W
на замовлення 1234 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
16+29.80 грн
22+19.62 грн
50+13.25 грн
100+11.24 грн
500+7.88 грн
1000+6.96 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
TLD22522EPXUMA1 Infineon-TLD2252-2EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626da6c043016dba1517ee6995
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-TSDSO-14; 60÷120mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-TSDSO-14
Output current: 60...120mA
Number of channels: 2
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
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BSC0924NDIATMA1 BSC0924NDI-DTE.pdf
BSC0924NDIATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 2.5W; PG-TISON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 2.5W
Case: PG-TISON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
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IPB107N20N3GATMA1 IPB107N20N3G-DTE.pdf
IPB107N20N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 10.7mΩ
Gate-source voltage: ±20V
Drain current: 88A
Drain-source voltage: 200V
Power dissipation: 300W
Technology: OptiMOS™ 3
Kind of channel: enhancement
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AIMW120R045M1XKSA1 Infineon-AIMW120R045M1-DataSheet-v03_00-EN.pdf?fileId=5546d4626e8d4b8f016e9304fd2e66c4
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 130A
Power dissipation: 114W
Case: TO247
Gate-source voltage: -7...20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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AIMW120R045M1XKSA1 AIMW120R045M1.pdf
AIMW120R045M1XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 130A
Power dissipation: 114W
Case: TO247
Gate-source voltage: -7...20V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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CY7C1612KV18-250BZXC Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 250MHz
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CY7C1612KV18-300BZXI Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 300MHz
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CY7C1612KV18-360BZXC Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 360MHz
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CY7C1615KV18-250BZXC Infineon-CY7C1613KV18_CY7C1615KV18_144-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec23aab3726
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 4Mx36bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 4Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 250MHz
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CY7C1618KV18-333BZXC Infineon-CY7C1618KV18_CY7C1620KV18_144-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec241b9372f
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
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IRFR48ZTRLPBF irfr48zpbf.pdf?fileId=5546d462533600a40153563243f020fa
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 91W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Power dissipation: 91W
Case: DPAK; TO252
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 40nC
Kind of channel: enhancement
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BTS500101TAEATMA1 BTS500101TAE.pdf
BTS500101TAEATMA1
+1
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 40A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 40A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO263-7-10
On-state resistance: 1.6mΩ
Supply voltage: 8...18V DC
Technology: Power PROFET
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CY8C3446LTI-085 download
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 50MHz; 64kBFLASH; Architecture: 8051
Type of integrated circuit: ARM microcontroller
Clock frequency: 50MHz
Memory: 64kB FLASH
Number of inputs/outputs: 38
Number of PWM channels: 1
Number of 16bit timers: 4
Mounting: SMD
Interface: I2C; SPI; UART; USB
Integrated circuit features: DMA; internal clock oscillator; PoR; PWM
Kind of architecture: 8051
Operating temperature: -40...85°C
Kind of core: 8-bit
Peripherial: DMA; POR
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IAUA180N04S5N012AUMA1 Infineon-IAUA180N04S5N012-DataSheet-v01_10-EN.pdf?fileId=5546d4626bb628d7016bc20182c67740
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 720A; 125W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 125W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
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CY14V116G7-BZ30XIT download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 30ns; FBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: NV SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 30ns
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC; 2.7...3.6V DC
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TLE4291EXUMA2 Infineon-TLE4291E-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101595fa0b06f1fce
TLE4291EXUMA2
Виробник: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-SSOP-14-EP
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.45A
Case: PG-SSOP-14-EP
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of channels: 1
Input voltage: 3.3...42V
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IRFR1010ZTRPBF irfr1010zpbf.pdf
IRFR1010ZTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 91A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 91A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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GS0650306LLMRXUMA1 Infineon-GS-065-030-6-LL-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e603d2dfc
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
250+539.19 грн
Мінімальне замовлення: 250
В кошику  од. на суму  грн.
FP25R12KE3BPSA1 Infineon-FP25R12KE3-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b430a9545185
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; Ic: 40A; ECONO2
Type of semiconductor module: IGBT
Collector current: 40A
Case: ECONO2
Gate-emitter voltage: ±20V
на замовлення 290 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
15+5288.91 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
BC847PNH6433XTMA1 BC846PNH6327.pdf
BC847PNH6433XTMA1
Виробник: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Polarisation: bipolar
Kind of transistor: complementary pair
Case: SOT363
Type of transistor: NPN / PNP
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 45V
Frequency: 250MHz
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2EDN7524RXTMA1 infineon-2edl50x3u2d-datasheet-en.pdf
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
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