Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (124847) > Сторінка 2042 з 2081
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FM25V10-DG | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; DFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 1Mb FRAM Interface: SPI Memory organisation: 128kx8bit Supply voltage: 2...3.6V DC Clock frequency: 40MHz Case: DFN8 Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 370 шт В кошику од. на суму грн. | |||||||||||||
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FM25V10-G | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SO8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 1Mb FRAM Interface: SPI Memory organisation: 128kx8bit Supply voltage: 2...3.6V DC Clock frequency: 40MHz Case: SO8 Mounting: SMD Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 1940 шт В кошику од. на суму грн. | ||||||||||||
| IPT015N10NF2SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 315A; 300W; HSOF-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 315A Power dissipation: 300W Case: HSOF-8 On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 161nC Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | |||||||||||||
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IRFS7437TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Power dissipation: 230W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhancement |
на замовлення 285 шт: термін постачання 14-30 дні (днів) |
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IRFS3306TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 110A; Idm: 620A; 230W; D2PAK Case: D2PAK Kind of channel: enhancement Technology: HEXFET® Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar On-state resistance: 4.2mΩ Gate-source voltage: ±20V Drain current: 110A Drain-source voltage: 60V Power dissipation: 230W Pulsed drain current: 620A |
на замовлення 374 шт: термін постачання 14-30 дні (днів) |
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IRFS4010TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 127A; 375W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 127A Power dissipation: 375W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 4.7mΩ Mounting: SMD Gate charge: 143nC Kind of package: reel Kind of channel: enhancement |
на замовлення 758 шт: термін постачання 14-30 дні (днів) |
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IRFS4020TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; D2PAK Polarisation: unipolar Case: D2PAK Kind of channel: enhancement Technology: HEXFET® Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel Power dissipation: 100W Drain current: 18A Drain-source voltage: 200V |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
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IRFSL3206PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 210A Power dissipation: 300W Case: TO262 Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRFS3607TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 140W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
| IRFS3806TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 31A; Idm: 170A; 71W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 31A Pulsed drain current: 170A Power dissipation: 71W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 15.8mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||
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IR2156STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,low-side; SOIC14; 400mA; Ch: 2; 36÷44kHz Type of integrated circuit: driver Kind of integrated circuit: high-side; low-side Case: SOIC14 Output current: 0.4A Number of channels: 2 Mounting: SMD Operating temperature: -25...125°C Application: for controller Frequency: 36...44kHz |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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IRF3805PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 130W Gate charge: 0.19µC Polarisation: unipolar Technology: HEXFET® Drain current: 220A Kind of channel: enhancement Drain-source voltage: 55V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 3.3mΩ |
на замовлення 100 шт: термін постачання 14-30 дні (днів) |
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IRF3805STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 210A; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain current: 210A Kind of channel: enhancement Drain-source voltage: 55V Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| IRF3709ZSTRRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 87A; 79W; D2PAK,TO263 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 87A Power dissipation: 79W Case: D2PAK; TO263 On-state resistance: 7.8mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 17nC |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||
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IPD80R900P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 45W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: SMD Gate charge: 15nC Kind of channel: enhancement Version: ESD |
на замовлення 2458 шт: термін постачання 14-30 дні (днів) |
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IPU80R900P7AKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 45W Case: IPAK Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 198 шт: термін постачання 14-30 дні (днів) |
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IPS80R900P7AKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 45W Case: IPAK SL Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: THT Gate charge: 15nC Kind of channel: enhancement Version: ESD |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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IRLB4030PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 370W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 4.3mΩ Mounting: THT Gate charge: 87nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 156 шт: термін постачання 14-30 дні (днів) |
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IRLB8314PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 120A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: THT Kind of channel: enhancement Pulsed drain current: 664A |
на замовлення 36 шт: термін постачання 14-30 дні (днів) |
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IRS2008SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Mounting: SMD Supply voltage: 10...20V DC Number of channels: 2 Case: SO8 Kind of package: tube Turn-off time: 180ns Turn-on time: 750ns Power: 625mW Voltage class: 200V Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Operating temperature: -40...125°C Output current: -600...290mA |
товару немає в наявності |
Мінімальне замовлення: 3800 шт В кошику од. на суму грн. | ||||||||||||
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IRS2005STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Mounting: SMD Supply voltage: 10...20V DC Number of channels: 2 Case: SO8 Kind of package: reel; tape Turn-off time: 150ns Turn-on time: 160ns Power: 625mW Voltage class: 200V Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Operating temperature: -40...125°C Output current: -600...290mA |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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IRS2003STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Topology: MOSFET half-bridge Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Output current: -600...290mA Turn-off time: 180ns Turn-on time: 750ns Power: 625mW Supply voltage: 10...20V DC Voltage class: 200V Type of integrated circuit: driver Number of channels: 2 Kind of integrated circuit: gate driver; high-/low-side Case: SO8 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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IRS2007SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 200V Turn-on time: 160ns Turn-off time: 150ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| IRS2001STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; 10÷20V Type of integrated circuit: driver Mounting: SMD Number of channels: 2 Case: SOIC8 Input voltage: 10...20V Kind of integrated circuit: high-side; low-side Operating temperature: -40...125°C Output current: 0.13A |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
| IRS2011STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,low-side; SOIC8; 1A; Ch: 2; 10÷20V Type of integrated circuit: driver Case: SOIC8 Mounting: SMD Kind of integrated circuit: high-side; low-side Number of channels: 2 Input voltage: 10...20V Output current: 1A Operating temperature: -40...125°C |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
| IRS2004STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; MOSFET; 10÷20V Type of integrated circuit: driver Mounting: SMD Number of channels: 2 Case: SOIC8 Input voltage: 10...20V Kind of integrated circuit: high-side; low-side Integrated circuit features: MOSFET Operating temperature: -40...125°C Output current: 0.13A |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
| IRS2093MTRPBF | INFINEON TECHNOLOGIES |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; 10÷15VDC; Ch: 4; Amp.class: D; MLPQ48 Type of integrated circuit: audio amplifier Mounting: SMD Supply voltage: 10...15V DC Number of channels: 4 Amplifier class: D Case: MLPQ48 Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| IRS2005MTRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; H-bridge; half-bridge; VFQFN14; 600mA; Ch: 2; MOSFET Type of integrated circuit: driver Mounting: SMD Number of channels: 2 Case: VFQFN14 Turn-on time: 160ns Power dissipation: 2.1W Voltage class: 200V Kind of integrated circuit: half-bridge Topology: H-bridge Integrated circuit features: MOSFET Operating temperature: -40...150°C Output current: 0.6A Pulse fall time: 30ns Impulse rise time: 70ns |
на замовлення 6000 шт: термін постачання 14-30 дні (днів) |
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ICE2PCS05GXUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PFC controller; -1.5÷2A; 20÷250kHz; PG-DSO-8; boost; SMPS Type of integrated circuit: PMIC Operating voltage: 11...25V DC Topology: boost Mounting: SMD Input voltage: 85...265V Output current: -1.5...2A Operating temperature: -40...125°C Duty cycle factor: 0...98.5% Application: SMPS Case: PG-DSO-8 Kind of integrated circuit: PFC controller Frequency: 20...250kHz |
на замовлення 2221 шт: термін постачання 14-30 дні (днів) |
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ICE2PCS01GXUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PFC controller; -1.5÷2A; 50÷250kHz; PG-DSO-8; boost; SMPS Type of integrated circuit: PMIC Kind of integrated circuit: PFC controller Output current: -1.5...2A Frequency: 50...250kHz Case: PG-DSO-8 Mounting: SMD Operating temperature: -40...125°C Topology: boost Input voltage: 80...265V Duty cycle factor: 0...98.5% Application: SMPS Operating voltage: 11...25V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| ICE2A180ZXKLA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 4.1A; 100kHz; Ch: 1; DIP7; flyback; 0÷77% Type of integrated circuit: PMIC Operating voltage: 8.5...21V DC Topology: flyback Mounting: THT Breakdown voltage: 800V Input voltage: 80...265V Output current: 4.1A Operating temperature: -25...130°C Duty cycle factor: 0...77% Application: SMPS Power: 29/17W Case: DIP7 Kind of integrated circuit: PWM controller Number of channels: 1 Frequency: 0.1MHz |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||
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1ED020I12F2XUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A Type of integrated circuit: driver Kind of integrated circuit: high-side; IGBT gate driver Case: PG-DSO-16-15 Output current: -2...2A Number of channels: 1 Mounting: SMD Protection: undervoltage UVP Integrated circuit features: active Miller clamp; galvanically isolated Technology: EiceDRIVER™ Voltage class: 0.6/1.2kV Kind of package: reel; tape Topology: single transistor Supply voltage: 0...28V; 4.5...5.5V |
на замовлення 765 шт: термін постачання 14-30 дні (днів) |
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| 1ED020I12FA2XUMA2 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: high-side; IGBT gate driver Technology: EiceDRIVER™ Case: PG-DSO-20 Output current: -2...2A Number of channels: 1 Integrated circuit features: active Miller clamp; galvanically isolated Mounting: SMD Kind of package: reel; tape Supply voltage: 0...28V; 4.5...5.5V Voltage class: 0.6/1.2kV Protection: undervoltage UVP |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||
| 1ED020I12FXUMA2 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1 Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Technology: EiceDRIVER™ Case: PG-DSO-16-15 Output current: -2...2A Number of channels: 1 Integrated circuit features: active Miller clamp; galvanically isolated Mounting: SMD Kind of package: reel; tape Supply voltage: 0...28V; 4.5...5.5V Voltage class: 0.6/1.2kV Protection: undervoltage UVP |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||
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2ED020I12-FI | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; IGBT half-bridge; high-side,IGBT gate driver; -2÷1A Type of integrated circuit: driver Kind of integrated circuit: high-side; IGBT gate driver Case: PG-DSO-18 Output current: -2...1A Number of channels: 2 Mounting: SMD Protection: undervoltage UVP Integrated circuit features: built-in comparator; built-in operational amplifier; integrated bootstrap functionality Technology: EiceDRIVER™ Voltage class: 1.2kV Kind of package: reel; tape Topology: IGBT half-bridge Supply voltage: 0...5V; 14...18V |
на замовлення 260 шт: термін постачання 14-30 дні (днів) |
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| 2ED020I12F2XUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; H-bridge; half-bridge; PG-DSO-36; 2A; Ch: 2; MOSFET; 1W Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: half-bridge Case: PG-DSO-36 Output current: 2A Number of channels: 2 Integrated circuit features: MOSFET Mounting: SMD Voltage class: 1.2kV Pulse fall time: 50ns Turn-on time: 170ns Impulse rise time: 30ns Operating temperature: -40...150°C Maximum output current: 2A Power dissipation: 1W |
на замовлення 1000 шт: термін постачання 14-30 дні (днів) |
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BSP613PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -2.9A; 1.8W; PG-SOT223 Mounting: SMD Power dissipation: 1.8W Polarisation: unipolar Technology: SIPMOS™ Drain current: -2.9A Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Case: PG-SOT223 On-state resistance: 0.13Ω |
на замовлення 120 шт: термін постачання 14-30 дні (днів) |
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IPD060N03LGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 43A; 56W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 43A Power dissipation: 56W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Kind of channel: enhancement |
на замовлення 1967 шт: термін постачання 14-30 дні (днів) |
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IRFP4227PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 65A; 330W; TO247AC Type of transistor: N-MOSFET On-state resistance: 25mΩ Mounting: THT Power dissipation: 330W Gate charge: 70nC Polarisation: unipolar Technology: HEXFET® Drain current: 65A Kind of channel: enhancement Drain-source voltage: 200V Gate-source voltage: ±30V Kind of package: tube Case: TO247AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRF7490TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 5.4A; SO8 Mounting: SMD Polarisation: unipolar Drain current: 5.4A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Kind of package: reel; tape Case: SO8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IGCM15F60GA | INFINEON TECHNOLOGIES |
Category: Motor and PWM driversDescription: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz Type of integrated circuit: driver Kind of integrated circuit: 3-phase motor controller; IPM Case: PG-MDIP24 Output current: -15...15A Mounting: THT Operating temperature: -40...125°C Kind of package: tube Frequency: 20kHz Operating voltage: 13.5...18.5/0...400V DC Topology: IGBT three-phase bridge; thermistor Protection: anti-overload OPP; undervoltage UVP Power dissipation: 29W Integrated circuit features: integrated bootstrap functionality Technology: ClPOS™ Mini; TRENCHSTOP™ Voltage class: 600V |
на замовлення 10 шт: термін постачання 14-30 дні (днів) |
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| IKCM15F60GAXKMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM driversDescription: IC: driver; half-bridge; DIP24; 15A; Iout max: 15A Type of integrated circuit: driver Kind of integrated circuit: half-bridge Case: DIP24 Output current: 15A Mounting: THT Operating temperature: -40...125°C Maximum output current: 15A |
товару немає в наявності |
Мінімальне замовлення: 14 шт В кошику од. на суму грн. | |||||||||||||
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IPD040N03LGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3 Case: PG-TO252-3 Mounting: SMD Power dissipation: 94W Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 79A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 4mΩ |
на замовлення 1238 шт: термін постачання 14-30 дні (днів) |
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ISZ040N03L5ISATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 40A; 37W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 37W Case: PG-TDSON-8 On-state resistance: 4mΩ Mounting: SMD Gate charge: 17nC Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
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TLE7258SJXUMA1 | INFINEON TECHNOLOGIES |
Category: Interfaces others - integrated circuitsDescription: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8 Type of integrated circuit: interface Kind of integrated circuit: transceiver Mounting: SMD Case: PG-DSO-8 Operating temperature: -40...150°C DC supply current: 3mA Number of transmitters: 1 Number of receivers: 1 Supply voltage: 5.5...18V DC Interface: LIN Kind of package: reel; tape |
на замовлення 2394 шт: термін постачання 14-30 дні (днів) |
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TLE7259-3GE | INFINEON TECHNOLOGIES |
Category: Ethernet interfaces -integrated circuitsDescription: IC: Ethernet interface; transceiver; LIN; PG-DSO-8; 5.5÷27VDC Supply voltage: 5.5...27V DC Interface: LIN Operating temperature: -40...150°C Mounting: SMD Type of integrated circuit: Ethernet interface DC supply current: 5mA Number of receivers: 1 Number of transmitters: 1 Kind of package: reel; tape Case: PG-DSO-8 Kind of integrated circuit: transceiver |
на замовлення 2313 шт: термін постачання 14-30 дні (днів) |
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TLE7181EMXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Number of channels: 4 Kind of output: non-inverting Mounting: SMD Case: SSOP24 Operating temperature: -40...150°C Turn-off time: 200ns Turn-on time: 250ns Supply voltage: 7...34V DC Topology: H-bridge; push-pull |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TLE7250VSJXUMA1 | INFINEON TECHNOLOGIES |
Category: CAN interfaces - integrated circuitsDescription: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1 Type of integrated circuit: CAN transceiver Mounting: SMD Case: PG-DSO-8 Operating temperature: -40...150°C DC supply current: 60mA Number of transmitters: 1 Number of receivers: 1 Supply voltage: 4.5...5.5V DC Interface: CAN Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TLE7268SKXUMA1 | INFINEON TECHNOLOGIES |
Category: Interfaces others - integrated circuitsDescription: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14 Type of integrated circuit: interface Kind of integrated circuit: transceiver Mounting: SMD Case: PG-DSO-14 Operating temperature: -40...150°C Number of transmitters: 2 Number of receivers: 2 Supply voltage: 5.5...40V DC Interface: LIN Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TLE7251VSJXUMA1 | INFINEON TECHNOLOGIES |
Category: CAN interfaces - integrated circuitsDescription: IC: CAN transceiver; 3÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1 Type of integrated circuit: CAN transceiver Mounting: SMD Case: PG-DSO-8 Operating temperature: -40...150°C DC supply current: 60mA Number of transmitters: 1 Number of receivers: 1 Supply voltage: 3...5.5V DC Interface: CAN Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TLE7182EMXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Number of channels: 4 Mounting: SMD Case: SSOP24 Operating temperature: -40...150°C Turn-off time: 200ns Turn-on time: 250ns Supply voltage: 7...34V DC Topology: H-bridge; push-pull |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| TLE7230RAUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 2A; Ch: 8; N-Channel; SMD; PG-DSO-36 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 2A Number of channels: 8 Kind of output: N-Channel Mounting: SMD Case: PG-DSO-36 On-state resistance: 0.8Ω Operating temperature: -40...150°C Application: automotive industry Integrated circuit features: thermal protection Supply voltage: 4.5...5.5V DC |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||
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TLE7250SJXUMA1 | INFINEON TECHNOLOGIES |
Category: CAN interfaces - integrated circuitsDescription: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1 Type of integrated circuit: CAN transceiver Mounting: SMD Case: PG-DSO-8 Operating temperature: -40...150°C DC supply current: 60mA Number of transmitters: 1 Number of receivers: 1 Supply voltage: 4.5...5.5V DC Interface: CAN Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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TLE7250XSJXUMA1 | INFINEON TECHNOLOGIES |
Category: CAN interfaces - integrated circuitsDescription: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1 Type of integrated circuit: CAN transceiver Mounting: SMD Case: PG-DSO-8 Operating temperature: -40...150°C DC supply current: 60mA Number of transmitters: 1 Number of receivers: 1 Supply voltage: 4.5...5.5V DC Interface: CAN Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| TLE7268LCXUMA1 | INFINEON TECHNOLOGIES |
Category: Interfaces others - integrated circuitsDescription: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14 Type of integrated circuit: interface Kind of integrated circuit: transceiver Mounting: SMD Case: PG-TSON-14 Operating temperature: -40...150°C Number of transmitters: 2 Number of receivers: 2 Supply voltage: 5.5...40V DC Interface: LIN Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||
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TLE75602ESDXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 330mA; Ch: 14; N-Channel; SMD; TSSOP24 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.33A Number of channels: 14 Kind of output: N-Channel Mounting: SMD Case: TSSOP24 On-state resistance: 1Ω Operating temperature: -40...150°C Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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IPA037N08N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP Mounting: THT Kind of channel: enhancement Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Kind of package: tube Case: TO220FP Polarisation: unipolar On-state resistance: 3.7mΩ Gate-source voltage: ±20V Power dissipation: 41W Drain current: 75A Drain-source voltage: 80V |
на замовлення 18 шт: термін постачання 14-30 дні (днів) |
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BSP373NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.8A Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.24Ω Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ |
на замовлення 1025 шт: термін постачання 14-30 дні (днів) |
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IKY75N120CS6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 75A; 440W; TO247PLUS-4 Mounting: THT Pulsed collector current: 300A Type of transistor: IGBT Kind of package: tube Case: TO247PLUS-4 Gate-emitter voltage: ±20V Collector current: 75A Collector-emitter voltage: 1.2kV Power dissipation: 440W Gate charge: 530nC Technology: TRENCHSTOP™ 6 Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BSP125H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223 Case: SOT223 Mounting: SMD Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 45Ω Power dissipation: 1.8W Polarisation: unipolar Technology: SIPMOS™ Drain current: 0.12A |
на замовлення 745 шт: термін постачання 14-30 дні (днів) |
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| FM25V10-DG |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 370 шт
В кошику
од. на суму грн.
| FM25V10-G |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1940 шт
В кошику
од. на суму грн.
| IPT015N10NF2SATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 315A; 300W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 315A
Power dissipation: 300W
Case: HSOF-8
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 161nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 315A; 300W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 315A
Power dissipation: 300W
Case: HSOF-8
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 161nC
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
од. на суму грн.
| IRFS7437TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 285 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 152.69 грн |
| 10+ | 120.22 грн |
| IRFS3306TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; Idm: 620A; 230W; D2PAK
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 4.2mΩ
Gate-source voltage: ±20V
Drain current: 110A
Drain-source voltage: 60V
Power dissipation: 230W
Pulsed drain current: 620A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; Idm: 620A; 230W; D2PAK
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 4.2mΩ
Gate-source voltage: ±20V
Drain current: 110A
Drain-source voltage: 60V
Power dissipation: 230W
Pulsed drain current: 620A
на замовлення 374 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 239.30 грн |
| 10+ | 164.17 грн |
| 20+ | 143.44 грн |
| 50+ | 118.56 грн |
| 100+ | 105.30 грн |
| 200+ | 95.35 грн |
| IRFS4010TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel
Kind of channel: enhancement
на замовлення 758 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 192.87 грн |
| IRFS4020TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; D2PAK
Polarisation: unipolar
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel
Power dissipation: 100W
Drain current: 18A
Drain-source voltage: 200V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; D2PAK
Polarisation: unipolar
Case: D2PAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel
Power dissipation: 100W
Drain current: 18A
Drain-source voltage: 200V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IRFSL3206PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IRFS3607TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IRFS3806TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 31A; Idm: 170A; 71W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 31A
Pulsed drain current: 170A
Power dissipation: 71W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 15.8mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 31A; Idm: 170A; 71W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 31A
Pulsed drain current: 170A
Power dissipation: 71W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 15.8mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IR2156STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; 400mA; Ch: 2; 36÷44kHz
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Output current: 0.4A
Number of channels: 2
Mounting: SMD
Operating temperature: -25...125°C
Application: for controller
Frequency: 36...44kHz
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; 400mA; Ch: 2; 36÷44kHz
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Output current: 0.4A
Number of channels: 2
Mounting: SMD
Operating temperature: -25...125°C
Application: for controller
Frequency: 36...44kHz
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IRF3805PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 130W
Gate charge: 0.19µC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 220A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 130W
Gate charge: 0.19µC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 220A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 241.08 грн |
| 50+ | 121.88 грн |
| IRF3805STRLPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 210A; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 210A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 210A; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 210A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| IRF3709ZSTRRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 87A; 79W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 87A
Power dissipation: 79W
Case: D2PAK; TO263
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 17nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 87A; 79W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 87A
Power dissipation: 79W
Case: D2PAK; TO263
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 17nC
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IPD80R900P7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
на замовлення 2458 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 119.65 грн |
| 10+ | 72.13 грн |
| 25+ | 61.44 грн |
| 75+ | 51.16 грн |
| 100+ | 48.92 грн |
| 500+ | 41.37 грн |
| IPU80R900P7AKMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 198 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 83.93 грн |
| 10+ | 64.34 грн |
| 75+ | 53.06 грн |
| 150+ | 49.08 грн |
| IPS80R900P7AKMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 149.11 грн |
| IRLB4030PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 156 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 218.06 грн |
| 10+ | 164.17 грн |
| 20+ | 145.92 грн |
| 50+ | 126.03 грн |
| 100+ | 113.59 грн |
| IRLB8314PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 664A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 664A
на замовлення 36 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 104.47 грн |
| 10+ | 47.01 грн |
| IRS2008SPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: tube
Turn-off time: 180ns
Turn-on time: 750ns
Power: 625mW
Voltage class: 200V
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -600...290mA
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: tube
Turn-off time: 180ns
Turn-on time: 750ns
Power: 625mW
Voltage class: 200V
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -600...290mA
товару немає в наявності
Мінімальне замовлення: 3800 шт
В кошику
од. на суму грн.
| IRS2005STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: reel; tape
Turn-off time: 150ns
Turn-on time: 160ns
Power: 625mW
Voltage class: 200V
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -600...290mA
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: reel; tape
Turn-off time: 150ns
Turn-on time: 160ns
Power: 625mW
Voltage class: 200V
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -600...290mA
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IRS2003STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Topology: MOSFET half-bridge
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output current: -600...290mA
Turn-off time: 180ns
Turn-on time: 750ns
Power: 625mW
Supply voltage: 10...20V DC
Voltage class: 200V
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Topology: MOSFET half-bridge
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Output current: -600...290mA
Turn-off time: 180ns
Turn-on time: 750ns
Power: 625mW
Supply voltage: 10...20V DC
Voltage class: 200V
Type of integrated circuit: driver
Number of channels: 2
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IRS2007SPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 160ns
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 160ns
Turn-off time: 150ns
товару немає в наявності
В кошику
од. на суму грн.
| IRS2001STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; 10÷20V
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: SOIC8
Input voltage: 10...20V
Kind of integrated circuit: high-side; low-side
Operating temperature: -40...125°C
Output current: 0.13A
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; 10÷20V
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: SOIC8
Input voltage: 10...20V
Kind of integrated circuit: high-side; low-side
Operating temperature: -40...125°C
Output current: 0.13A
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IRS2011STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1A; Ch: 2; 10÷20V
Type of integrated circuit: driver
Case: SOIC8
Mounting: SMD
Kind of integrated circuit: high-side; low-side
Number of channels: 2
Input voltage: 10...20V
Output current: 1A
Operating temperature: -40...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1A; Ch: 2; 10÷20V
Type of integrated circuit: driver
Case: SOIC8
Mounting: SMD
Kind of integrated circuit: high-side; low-side
Number of channels: 2
Input voltage: 10...20V
Output current: 1A
Operating temperature: -40...125°C
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IRS2004STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: SOIC8
Input voltage: 10...20V
Kind of integrated circuit: high-side; low-side
Integrated circuit features: MOSFET
Operating temperature: -40...125°C
Output current: 0.13A
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: SOIC8
Input voltage: 10...20V
Kind of integrated circuit: high-side; low-side
Integrated circuit features: MOSFET
Operating temperature: -40...125°C
Output current: 0.13A
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IRS2093MTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 4; Amp.class: D; MLPQ48
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 4
Amplifier class: D
Case: MLPQ48
Kind of package: reel; tape
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 4; Amp.class: D; MLPQ48
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 4
Amplifier class: D
Case: MLPQ48
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IRS2005MTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; VFQFN14; 600mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: VFQFN14
Turn-on time: 160ns
Power dissipation: 2.1W
Voltage class: 200V
Kind of integrated circuit: half-bridge
Topology: H-bridge
Integrated circuit features: MOSFET
Operating temperature: -40...150°C
Output current: 0.6A
Pulse fall time: 30ns
Impulse rise time: 70ns
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; VFQFN14; 600mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: VFQFN14
Turn-on time: 160ns
Power dissipation: 2.1W
Voltage class: 200V
Kind of integrated circuit: half-bridge
Topology: H-bridge
Integrated circuit features: MOSFET
Operating temperature: -40...150°C
Output current: 0.6A
Pulse fall time: 30ns
Impulse rise time: 70ns
на замовлення 6000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 45.45 грн |
| ICE2PCS05GXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 20÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Operating voltage: 11...25V DC
Topology: boost
Mounting: SMD
Input voltage: 85...265V
Output current: -1.5...2A
Operating temperature: -40...125°C
Duty cycle factor: 0...98.5%
Application: SMPS
Case: PG-DSO-8
Kind of integrated circuit: PFC controller
Frequency: 20...250kHz
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 20÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Operating voltage: 11...25V DC
Topology: boost
Mounting: SMD
Input voltage: 85...265V
Output current: -1.5...2A
Operating temperature: -40...125°C
Duty cycle factor: 0...98.5%
Application: SMPS
Case: PG-DSO-8
Kind of integrated circuit: PFC controller
Frequency: 20...250kHz
на замовлення 2221 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 64.29 грн |
| 9+ | 49.75 грн |
| 10+ | 48.92 грн |
| ICE2PCS01GXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 50÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Output current: -1.5...2A
Frequency: 50...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 80...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 50÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Output current: -1.5...2A
Frequency: 50...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 80...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
товару немає в наявності
В кошику
од. на суму грн.
| ICE2A180ZXKLA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 4.1A; 100kHz; Ch: 1; DIP7; flyback; 0÷77%
Type of integrated circuit: PMIC
Operating voltage: 8.5...21V DC
Topology: flyback
Mounting: THT
Breakdown voltage: 800V
Input voltage: 80...265V
Output current: 4.1A
Operating temperature: -25...130°C
Duty cycle factor: 0...77%
Application: SMPS
Power: 29/17W
Case: DIP7
Kind of integrated circuit: PWM controller
Number of channels: 1
Frequency: 0.1MHz
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 4.1A; 100kHz; Ch: 1; DIP7; flyback; 0÷77%
Type of integrated circuit: PMIC
Operating voltage: 8.5...21V DC
Topology: flyback
Mounting: THT
Breakdown voltage: 800V
Input voltage: 80...265V
Output current: 4.1A
Operating temperature: -25...130°C
Duty cycle factor: 0...77%
Application: SMPS
Power: 29/17W
Case: DIP7
Kind of integrated circuit: PWM controller
Number of channels: 1
Frequency: 0.1MHz
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| 1ED020I12F2XUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Mounting: SMD
Protection: undervoltage UVP
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
Voltage class: 0.6/1.2kV
Kind of package: reel; tape
Topology: single transistor
Supply voltage: 0...28V; 4.5...5.5V
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Mounting: SMD
Protection: undervoltage UVP
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
Voltage class: 0.6/1.2kV
Kind of package: reel; tape
Topology: single transistor
Supply voltage: 0...28V; 4.5...5.5V
на замовлення 765 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 279.48 грн |
| 4+ | 230.50 грн |
| 10+ | 203.96 грн |
| 25+ | 198.16 грн |
| 1ED020I12FA2XUMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-20
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-20
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| 1ED020I12FXUMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
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Мінімальне замовлення: 1000 шт
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| 2ED020I12-FI |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-side,IGBT gate driver; -2÷1A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-18
Output current: -2...1A
Number of channels: 2
Mounting: SMD
Protection: undervoltage UVP
Integrated circuit features: built-in comparator; built-in operational amplifier; integrated bootstrap functionality
Technology: EiceDRIVER™
Voltage class: 1.2kV
Kind of package: reel; tape
Topology: IGBT half-bridge
Supply voltage: 0...5V; 14...18V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-side,IGBT gate driver; -2÷1A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-18
Output current: -2...1A
Number of channels: 2
Mounting: SMD
Protection: undervoltage UVP
Integrated circuit features: built-in comparator; built-in operational amplifier; integrated bootstrap functionality
Technology: EiceDRIVER™
Voltage class: 1.2kV
Kind of package: reel; tape
Topology: IGBT half-bridge
Supply voltage: 0...5V; 14...18V
на замовлення 260 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 311.62 грн |
| 10+ | 192.36 грн |
| 25+ | 175.77 грн |
| 100+ | 153.39 грн |
| 250+ | 138.46 грн |
| 2ED020I12F2XUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; PG-DSO-36; 2A; Ch: 2; MOSFET; 1W
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: half-bridge
Case: PG-DSO-36
Output current: 2A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Voltage class: 1.2kV
Pulse fall time: 50ns
Turn-on time: 170ns
Impulse rise time: 30ns
Operating temperature: -40...150°C
Maximum output current: 2A
Power dissipation: 1W
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; PG-DSO-36; 2A; Ch: 2; MOSFET; 1W
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: half-bridge
Case: PG-DSO-36
Output current: 2A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Voltage class: 1.2kV
Pulse fall time: 50ns
Turn-on time: 170ns
Impulse rise time: 30ns
Operating temperature: -40...150°C
Maximum output current: 2A
Power dissipation: 1W
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 367.87 грн |
| BSP613PH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; 1.8W; PG-SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: -2.9A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT223
On-state resistance: 0.13Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; 1.8W; PG-SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: -2.9A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT223
On-state resistance: 0.13Ω
на замовлення 120 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 113.40 грн |
| 10+ | 69.48 грн |
| 25+ | 59.20 грн |
| 100+ | 47.51 грн |
| IPD060N03LGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 56W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 56W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 56W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 56W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 1967 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 67.86 грн |
| 8+ | 53.73 грн |
| 10+ | 48.17 грн |
| 50+ | 35.49 грн |
| 100+ | 31.34 грн |
| 500+ | 31.17 грн |
| IRFP4227PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 330W; TO247AC
Type of transistor: N-MOSFET
On-state resistance: 25mΩ
Mounting: THT
Power dissipation: 330W
Gate charge: 70nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 65A
Kind of channel: enhancement
Drain-source voltage: 200V
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247AC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 330W; TO247AC
Type of transistor: N-MOSFET
On-state resistance: 25mΩ
Mounting: THT
Power dissipation: 330W
Gate charge: 70nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 65A
Kind of channel: enhancement
Drain-source voltage: 200V
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247AC
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| IRF7490TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.4A; SO8
Mounting: SMD
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.4A; SO8
Mounting: SMD
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SO8
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| IGCM15F60GA |
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Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -15...15A
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...18.5/0...400V DC
Topology: IGBT three-phase bridge; thermistor
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 29W
Integrated circuit features: integrated bootstrap functionality
Technology: ClPOS™ Mini; TRENCHSTOP™
Voltage class: 600V
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -15...15A
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...18.5/0...400V DC
Topology: IGBT three-phase bridge; thermistor
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 29W
Integrated circuit features: integrated bootstrap functionality
Technology: ClPOS™ Mini; TRENCHSTOP™
Voltage class: 600V
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 903.61 грн |
| 10+ | 690.66 грн |
| IKCM15F60GAXKMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; half-bridge; DIP24; 15A; Iout max: 15A
Type of integrated circuit: driver
Kind of integrated circuit: half-bridge
Case: DIP24
Output current: 15A
Mounting: THT
Operating temperature: -40...125°C
Maximum output current: 15A
Category: Motor and PWM drivers
Description: IC: driver; half-bridge; DIP24; 15A; Iout max: 15A
Type of integrated circuit: driver
Kind of integrated circuit: half-bridge
Case: DIP24
Output current: 15A
Mounting: THT
Operating temperature: -40...125°C
Maximum output current: 15A
товару немає в наявності
Мінімальне замовлення: 14 шт
В кошику
од. на суму грн.
| IPD040N03LGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Power dissipation: 94W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 79A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Power dissipation: 94W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 79A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 4mΩ
на замовлення 1238 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 86.61 грн |
| 10+ | 50.74 грн |
| 100+ | 34.57 грн |
| 500+ | 27.86 грн |
| 1000+ | 25.79 грн |
| ISZ040N03L5ISATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 37W
Case: PG-TDSON-8
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 37W
Case: PG-TDSON-8
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhancement
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Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TLE7258SJXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
Kind of package: reel; tape
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
Kind of package: reel; tape
на замовлення 2394 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 59.82 грн |
| 11+ | 40.05 грн |
| 25+ | 35.98 грн |
| 100+ | 34.24 грн |
| TLE7259-3GE |
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Виробник: INFINEON TECHNOLOGIES
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; transceiver; LIN; PG-DSO-8; 5.5÷27VDC
Supply voltage: 5.5...27V DC
Interface: LIN
Operating temperature: -40...150°C
Mounting: SMD
Type of integrated circuit: Ethernet interface
DC supply current: 5mA
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
Case: PG-DSO-8
Kind of integrated circuit: transceiver
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; transceiver; LIN; PG-DSO-8; 5.5÷27VDC
Supply voltage: 5.5...27V DC
Interface: LIN
Operating temperature: -40...150°C
Mounting: SMD
Type of integrated circuit: Ethernet interface
DC supply current: 5mA
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
Case: PG-DSO-8
Kind of integrated circuit: transceiver
на замовлення 2313 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 81.25 грн |
| 7+ | 67.99 грн |
| 25+ | 59.70 грн |
| 100+ | 54.72 грн |
| 500+ | 50.58 грн |
| TLE7181EMXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Number of channels: 4
Kind of output: non-inverting
Mounting: SMD
Case: SSOP24
Operating temperature: -40...150°C
Turn-off time: 200ns
Turn-on time: 250ns
Supply voltage: 7...34V DC
Topology: H-bridge; push-pull
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Number of channels: 4
Kind of output: non-inverting
Mounting: SMD
Case: SSOP24
Operating temperature: -40...150°C
Turn-off time: 200ns
Turn-on time: 250ns
Supply voltage: 7...34V DC
Topology: H-bridge; push-pull
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| TLE7250VSJXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Kind of package: reel; tape
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Kind of package: reel; tape
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| TLE7268SKXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-14
Operating temperature: -40...150°C
Number of transmitters: 2
Number of receivers: 2
Supply voltage: 5.5...40V DC
Interface: LIN
Kind of package: reel; tape
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-14
Operating temperature: -40...150°C
Number of transmitters: 2
Number of receivers: 2
Supply voltage: 5.5...40V DC
Interface: LIN
Kind of package: reel; tape
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| TLE7251VSJXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 3÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 3...5.5V DC
Interface: CAN
Kind of package: reel; tape
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 3÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 3...5.5V DC
Interface: CAN
Kind of package: reel; tape
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| TLE7182EMXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Number of channels: 4
Mounting: SMD
Case: SSOP24
Operating temperature: -40...150°C
Turn-off time: 200ns
Turn-on time: 250ns
Supply voltage: 7...34V DC
Topology: H-bridge; push-pull
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Number of channels: 4
Mounting: SMD
Case: SSOP24
Operating temperature: -40...150°C
Turn-off time: 200ns
Turn-on time: 250ns
Supply voltage: 7...34V DC
Topology: H-bridge; push-pull
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| TLE7230RAUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 8; N-Channel; SMD; PG-DSO-36
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 8
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-36
On-state resistance: 0.8Ω
Operating temperature: -40...150°C
Application: automotive industry
Integrated circuit features: thermal protection
Supply voltage: 4.5...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 8; N-Channel; SMD; PG-DSO-36
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 8
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-36
On-state resistance: 0.8Ω
Operating temperature: -40...150°C
Application: automotive industry
Integrated circuit features: thermal protection
Supply voltage: 4.5...5.5V DC
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| TLE7250SJXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Kind of package: reel; tape
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TLE7250XSJXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Kind of package: reel; tape
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| TLE7268LCXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-TSON-14
Operating temperature: -40...150°C
Number of transmitters: 2
Number of receivers: 2
Supply voltage: 5.5...40V DC
Interface: LIN
Kind of package: reel; tape
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-TSON-14
Operating temperature: -40...150°C
Number of transmitters: 2
Number of receivers: 2
Supply voltage: 5.5...40V DC
Interface: LIN
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TLE75602ESDXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 330mA; Ch: 14; N-Channel; SMD; TSSOP24
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.33A
Number of channels: 14
Kind of output: N-Channel
Mounting: SMD
Case: TSSOP24
On-state resistance: 1Ω
Operating temperature: -40...150°C
Application: automotive industry
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 330mA; Ch: 14; N-Channel; SMD; TSSOP24
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.33A
Number of channels: 14
Kind of output: N-Channel
Mounting: SMD
Case: TSSOP24
On-state resistance: 1Ω
Operating temperature: -40...150°C
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IPA037N08N3GXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Kind of package: tube
Case: TO220FP
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 41W
Drain current: 75A
Drain-source voltage: 80V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Kind of package: tube
Case: TO220FP
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 41W
Drain current: 75A
Drain-source voltage: 80V
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 252.69 грн |
| 3+ | 203.96 грн |
| 10+ | 183.24 грн |
| BSP373NH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
на замовлення 1025 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 67.86 грн |
| 11+ | 39.13 грн |
| 100+ | 27.28 грн |
| IKY75N120CS6XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; TO247PLUS-4
Mounting: THT
Pulsed collector current: 300A
Type of transistor: IGBT
Kind of package: tube
Case: TO247PLUS-4
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 1.2kV
Power dissipation: 440W
Gate charge: 530nC
Technology: TRENCHSTOP™ 6
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; TO247PLUS-4
Mounting: THT
Pulsed collector current: 300A
Type of transistor: IGBT
Kind of package: tube
Case: TO247PLUS-4
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 1.2kV
Power dissipation: 440W
Gate charge: 530nC
Technology: TRENCHSTOP™ 6
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
В кошику
од. на суму грн.
| BSP125H6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Case: SOT223
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 45Ω
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 0.12A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Case: SOT223
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 45Ω
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 0.12A
на замовлення 745 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 68.75 грн |
| 11+ | 39.63 грн |
| 50+ | 29.52 грн |
| 100+ | 26.28 грн |
| 200+ | 24.71 грн |































