Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (122990) > Сторінка 2043 з 2050
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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CY8C4246AZI-M445 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 48MHz; TQFP64; 8kBSRAM,64kBFLASH Operating temperature: -40...85°C Type of integrated circuit: PSoC microcontroller Case: TQFP64 Integrated circuit features: CapSense; LCD controller Mounting: SMD Kind of core: 32-bit Supply voltage: 1.71...5.5V DC Number of inputs/outputs: 51 Memory: 8kB SRAM; 64kB FLASH Clock frequency: 48MHz Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART |
товару немає в наявності |
Мінімальне замовлення: 1600 шт В кошику од. на суму грн. | ||||||||||
| IPD047N03LF2SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 71A; 65W; DPAK,TO252 Polarisation: unipolar On-state resistance: 4.7mΩ Drain-source voltage: 30V Drain current: 71A Power dissipation: 65W Case: DPAK; TO252 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||
| BCR421UE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: LED driversDescription: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: current regulator; LED driver Case: SC74 Output current: 150...200mA Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 1.4...40V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
|
TLE4906L | INFINEON TECHNOLOGIES |
Category: Hall SensorsDescription: Sensor: Hall; unipolar; 150Gs; Usup: 2.7÷18VDC; 20mA Type of sensor: Hall Switched current: 20mA Supply voltage: 2.7...18V DC Range of detectable magnetic field: 150Gs Operating temperature: -40...150°C Kind of sensor: unipolar |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||
| TLE4906LHALA1 | INFINEON TECHNOLOGIES |
Category: Hall SensorsDescription: Sensor: Hall Type of sensor: Hall |
на замовлення 2000 шт: термін постачання 14-30 дні (днів) |
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| S27KS0642GABHA020 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 64Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 1.7...2V DC Interface: HyperBus |
товару немає в наявності |
Мінімальне замовлення: 1690 шт В кошику од. на суму грн. | |||||||||||
| S25FL256LAGBHA020 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Case: BGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Interface: QUAD SPI Kind of interface: serial Application: automotive Operating voltage: 2.7...3.6V Operating frequency: 133MHz |
товару немає в наявності |
Мінімальне замовлення: 338 шт В кошику од. на суму грн. | |||||||||||
| S25FL256LAGBHA023 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Case: BGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Interface: QUAD SPI Kind of interface: serial Application: automotive Operating voltage: 2.7...3.6V Operating frequency: 133MHz |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||
| S26KS128SDPBHA020 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Interface: HyperBus Kind of interface: serial Application: automotive Operating voltage: 1.7...1.95V Operating frequency: 166MHz |
товару немає в наявності |
Мінімальне замовлення: 1690 шт В кошику од. на суму грн. | |||||||||||
| S26KS256SDPBHA020 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24 Application: automotive Kind of memory: NOR Type of integrated circuit: FLASH memory Case: FBGA24 Interface: HyperBus Kind of package: in-tray Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.7...1.95V Operating frequency: 166MHz Memory: 256Mb FLASH |
товару немає в наявності |
Мінімальне замовлення: 1690 шт В кошику од. на суму грн. | |||||||||||
| S26KS256SDPBHA023 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24 Application: automotive Kind of memory: NOR Type of integrated circuit: FLASH memory Case: FBGA24 Interface: HyperBus Kind of package: reel; tape Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.7...1.95V Operating frequency: 166MHz Memory: 256Mb FLASH |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||
| S26KS512SDPBHA020 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Interface: HyperBus Kind of interface: serial Application: automotive Operating voltage: 1.7...1.95V Operating frequency: 166MHz |
товару немає в наявності |
Мінімальне замовлення: 1690 шт В кошику од. на суму грн. | |||||||||||
| S27KL0643DPBHA020 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 64Mb DRAM Clock frequency: 166MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 2.7...3.6V DC Interface: HyperBus |
товару немає в наявності |
Мінімальне замовлення: 3380 шт В кошику од. на суму грн. | |||||||||||
| S27KL0643DPBHA023 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 64Mb DRAM Clock frequency: 166MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.7...3.6V DC Interface: HyperBus |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||
| S27KS0642GABHA023 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; 1.7÷2VDC Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 64Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 1.7...2V DC Interface: HyperBus |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||
| S27KS0643GABHA023 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; 1.7÷2VDC Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 64Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 1.7...2V DC Interface: HyperBus |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||
| S29GL512S10DHA023 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Access time: 100ns Case: BGA64 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Interface: CFI; parallel Kind of interface: parallel Application: automotive Operating voltage: 2.7...3.6V Output voltage: 2.7...3.6V DC |
товару немає в наявності |
Мінімальне замовлення: 2200 шт В кошику од. на суму грн. | |||||||||||
| S70KL1282DPBHA020 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 128Mb DRAM Clock frequency: 166MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 2.7...3.6V DC Interface: HyperBus |
товару немає в наявності |
Мінімальне замовлення: 3380 шт В кошику од. на суму грн. | |||||||||||
| S70KL1282DPBHA023 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 128Mb DRAM Clock frequency: 166MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.7...3.6V DC Interface: HyperBus |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||
| S70KS1282GABHA023 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 128Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 1.7...2V DC Interface: HyperBus |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||
| S80KS2563GABHA020 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray Kind of memory: DRAM Type of integrated circuit: DRAM memory Case: FBGA24 Interface: HyperBus Kind of package: in-tray Mounting: SMD Operating temperature: -40...85°C Access time: 35ns Supply voltage: 1.7...2V DC Clock frequency: 200MHz Memory: 256Mb DRAM |
товару немає в наявності |
Мінімальне замовлення: 676 шт В кошику од. на суму грн. | |||||||||||
| S80KS5122GABHA020 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 256Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 1.7...2V DC Interface: HyperBus |
товару немає в наявності |
Мінімальне замовлення: 676 шт В кошику од. на суму грн. | |||||||||||
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IPD60R600P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3 Drain current: 4A Pulsed drain current: 16A Gate-source voltage: ±20V Power dissipation: 30W Drain-source voltage: 600V Technology: CoolMOS™ P7 Kind of channel: enhancement Version: ESD Mounting: SMD Type of transistor: N-MOSFET Case: PG-TO252-3 Polarisation: unipolar Gate charge: 9nC On-state resistance: 0.6Ω |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BCW66KFE6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.8A; 0.5W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.5W Case: SOT23 Mounting: SMD Frequency: 170MHz |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||
| BCW66KGE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 800mA; SC59; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Case: SC59 Current gain: 160 Mounting: SMD Frequency: 170MHz Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
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IRFSL3207ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 170A; 300W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 170A Power dissipation: 300W Case: TO262 Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 88 шт: термін постачання 14-30 дні (днів) |
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| IPD25N06S4L30ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 17A; Idm: 92A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 17A Pulsed drain current: 92A Power dissipation: 29W Case: PG-TO252-3-11 Gate-source voltage: ±16V On-state resistance: 30mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS® -T2 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||
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BTS3125EJ | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; SO8-EP Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 2A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8-EP On-state resistance: 0.25Ω Technology: HITFET® Operating temperature: -40...150°C Output voltage: 40V Turn-on time: 115µs Turn-off time: 210µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| KP229E3111XTMA1 | INFINEON TECHNOLOGIES |
Category: Pressure SensorsDescription: Sensor: pressure; 20÷300kPa; absolute; OUT: analogue voltage; SMT Mounting: SMT Type of sensor: pressure Operating temperature: -40...140°C Supply voltage: 4.5...5.5V DC Pressure measuring range: 20...300kPa Operation mode: absolute Output configuration: analogue voltage |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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IHW20N120R5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 20A; 144W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ RC Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 144W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 170nC Kind of package: tube Turn-off time: 440ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
на замовлення 67 шт: термін постачання 14-30 дні (днів) |
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BSC0504NSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 64A; 30W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 3.7mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 5 Gate-source voltage: ±20V Drain-source voltage: 30V Power dissipation: 30W Drain current: 64A Case: PG-TDSON-8 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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PVI5080NPBF | INFINEON TECHNOLOGIES |
Category: Optocouplers - othersDescription: Optocoupler; THT; Ch: 1; OUT: photodiode; 4kV; DIP8; PVI-NPbF Manufacturer series: PVI-NPbF Case: DIP8 Mounting: THT Type of optocoupler: optocoupler Kind of output: photodiode Turn-off time: 220µs Turn-on time: 0.3ms Number of channels: 1 Insulation voltage: 4kV |
на замовлення 85 шт: термін постачання 14-30 дні (днів) |
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FM28V020-SG | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 2÷3.6VDC Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 256kb FRAM Interface: parallel 8bit Memory organisation: 32kx8bit Supply voltage: 2...3.6V DC Access time: 70ns Case: SO28 Mounting: SMD Kind of interface: parallel Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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FM28V020-T28G | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 2÷3.6VDC Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 256kb FRAM Interface: parallel 8bit Memory organisation: 32kx8bit Supply voltage: 2...3.6V DC Access time: 70ns Case: TSOP28 Mounting: SMD Kind of interface: parallel Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| 2DIB0400FXUMA1 | INFINEON TECHNOLOGIES |
Category: UnclassifiedDescription: 2DIB0400FXUMA1 |
на замовлення 2500 шт: термін постачання 14-30 дні (днів) |
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| CY62157EV30LL-45ZSXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.2...3.6V Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||
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IDH08G65C5 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; PG-TO220-2; 76W Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: PG-TO220-2 Max. forward voltage: 1.8V Max. forward impulse current: 60A Leakage current: 1.6µA Power dissipation: 76W Kind of package: tube Heatsink thickness: 1.17...137mm |
на замовлення 437 шт: термін постачання 14-30 дні (днів) |
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| S29GL01GS11DHIV10 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C |
товару немає в наявності |
Мінімальне замовлення: 260 шт В кошику од. на суму грн. | |||||||||||
| IPA90R500C3XKSA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 11A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 11A Power dissipation: 34W Case: TO220FP On-state resistance: 0.5Ω Mounting: THT Kind of channel: enhancement Gate charge: 68nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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IPA90R800C3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 33W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 4.4A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| CY7C64225-28PVXC | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuitsDescription: IC: interface; USB; SSOP28; 27mA; ESD; RS232 Type of integrated circuit: interface Interface: USB Case: SSOP28 Integrated circuit features: bridge Mounting: SMD Operating temperature: 0...70°C Number of channels: 1 DC supply current: 27mA Version: ESD Communictions protocol: RS232 |
на замовлення 2565 шт: термін постачання 14-30 дні (днів) |
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IRG7PH44K10D-EPBF | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 70A; 320W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 70A Power dissipation: 320W Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IRFP7537PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 172A; 230W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 172A Power dissipation: 230W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: THT Gate charge: 142nC Kind of package: tube Kind of channel: enhancement Trade name: StrongIRFET |
на замовлення 46 шт: термін постачання 14-30 дні (днів) |
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BSS127IXTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 21mA; 500mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21mA Power dissipation: 0.5W Case: SOT23 On-state resistance: 310Ω Mounting: SMD Gate charge: 0.65nC Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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S25FL128SAGMFIG01 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; SPI; 133MHz; 2.7÷3.6V; SO16; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: SO16 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C |
на замовлення 88 шт: термін постачання 14-30 дні (днів) |
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CY7C65217-24LTXI | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuitsDescription: IC: USB interface; GPIO x7,I2C,UART; USB controller; Full Speed Type of integrated circuit: USB interface Interface: GPIO x7; I2C; UART Kind of integrated circuit: USB controller USB speed: Full Speed Data transfer rate: 12Mbps Supply voltage: 1.71...5.5V DC Kind of package: in-tray; tube Case: QFN24 Mounting: SMD Operating temperature: -40...85°C Number of ports: 1 |
товару немає в наявності |
Мінімальне замовлення: 4900 шт В кошику од. на суму грн. | ||||||||||
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CY7C65217-24LTXIT | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuitsDescription: IC: USB interface; GPIO x7,I2C,UART; USB controller; Full Speed Type of integrated circuit: USB interface Interface: GPIO x7; I2C; UART Kind of integrated circuit: USB controller USB speed: Full Speed Data transfer rate: 12Mbps Supply voltage: 1.71...5.5V DC Kind of package: reel; tape Case: QFN24 Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
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BSC072N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 74A; 69W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 74A Power dissipation: 69W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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BCX70KE6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
товару немає в наявності |
Мінімальне замовлення: 48000 шт В кошику од. на суму грн. | ||||||||||
| BCX70JE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 100mA; 330mW; SC59 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SC59 Mounting: SMD Frequency: 250MHz Current gain: 250 Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
| FZ900R12KE4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modulesDescription: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES Type of semiconductor module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 900A Case: AG-62MMES Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.8kA Power dissipation: 4.3kW Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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IPA50R280CEXKSA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 7.5A; 30.4W; TO220FP Technology: CoolMOS™ Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Polarisation: unipolar On-state resistance: 0.28Ω Drain current: 7.5A Power dissipation: 30.4W Gate-source voltage: ±20V Drain-source voltage: 500V Case: TO220FP |
на замовлення 1769 шт: термін постачання 14-30 дні (днів) |
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IPA50R950CEXKSA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 2.4A; 25.7W; TO220FP Technology: CoolMOS™ Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Polarisation: unipolar On-state resistance: 0.95Ω Drain current: 2.4A Power dissipation: 25.7W Gate-source voltage: ±20V Drain-source voltage: 500V Case: TO220FP |
на замовлення 105 шт: термін постачання 14-30 дні (днів) |
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IPA50R190CEXKSA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 32W; TO220FP Technology: CoolMOS™ Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Polarisation: unipolar On-state resistance: 0.19Ω Drain current: 18.5A Power dissipation: 32W Gate-source voltage: ±20V Drain-source voltage: 500V Case: TO220FP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IPA50R500CEXKSA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 3.4A; 28W; TO220FP Technology: CoolMOS™ Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Polarisation: unipolar On-state resistance: 0.5Ω Drain current: 3.4A Power dissipation: 28W Gate-source voltage: ±20V Drain-source voltage: 500V Case: TO220FP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IPA50R520CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; TO220FP Technology: CoolMOS™ Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Polarisation: unipolar On-state resistance: 0.52Ω Drain current: 7.1A Power dissipation: 66W Gate-source voltage: ±20V Drain-source voltage: 500V Case: TO220FP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IPA50R800CEXKSA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 2.6A; 26.4W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.6A Power dissipation: 26.4W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| BCR119SH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 50V; 100mA; 250mW; SOT363; 4.7kΩ Mounting: SMD Collector-emitter voltage: 50V Case: SOT363 Type of transistor: NPN x2 Collector current: 0.1A Power dissipation: 0.25W Current gain: 120 Base resistor: 4.7kΩ Frequency: 150MHz Application: automotive industry Polarisation: bipolar |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
| BTS72002EPCXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 1.2A; Ch: 2; N-Channel; SMD; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.2A Number of channels: 2 Kind of output: N-Channel Mounting: SMD Case: PG-TSDSO-14 On-state resistance: 0.12Ω Supply voltage: 4.1...28V DC Technology: PROFET™+2 Kind of package: reel; tape Operating temperature: -40...150°C Turn-off time: 0.15ms Turn-on time: 170µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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IRFB38N20DPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 44A Power dissipation: 320W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 54mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
на замовлення 133 шт: термін постачання 14-30 дні (днів) |
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| CY8C4246AZI-M445 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP64; 8kBSRAM,64kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: PSoC microcontroller
Case: TQFP64
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Kind of core: 32-bit
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 51
Memory: 8kB SRAM; 64kB FLASH
Clock frequency: 48MHz
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP64; 8kBSRAM,64kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: PSoC microcontroller
Case: TQFP64
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Kind of core: 32-bit
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 51
Memory: 8kB SRAM; 64kB FLASH
Clock frequency: 48MHz
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
товару немає в наявності
Мінімальне замовлення: 1600 шт
В кошику
од. на суму грн.
| IPD047N03LF2SATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 71A; 65W; DPAK,TO252
Polarisation: unipolar
On-state resistance: 4.7mΩ
Drain-source voltage: 30V
Drain current: 71A
Power dissipation: 65W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 71A; 65W; DPAK,TO252
Polarisation: unipolar
On-state resistance: 4.7mΩ
Drain-source voltage: 30V
Drain current: 71A
Power dissipation: 65W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| BCR421UE6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 1.4...40V DC
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 1.4...40V DC
товару немає в наявності
В кошику
од. на суму грн.
| TLE4906L |
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Виробник: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; unipolar; 150Gs; Usup: 2.7÷18VDC; 20mA
Type of sensor: Hall
Switched current: 20mA
Supply voltage: 2.7...18V DC
Range of detectable magnetic field: 150Gs
Operating temperature: -40...150°C
Kind of sensor: unipolar
Category: Hall Sensors
Description: Sensor: Hall; unipolar; 150Gs; Usup: 2.7÷18VDC; 20mA
Type of sensor: Hall
Switched current: 20mA
Supply voltage: 2.7...18V DC
Range of detectable magnetic field: 150Gs
Operating temperature: -40...150°C
Kind of sensor: unipolar
товару немає в наявності
Мінімальне замовлення: 2 шт
В кошику
од. на суму грн.
| TLE4906LHALA1 |
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на замовлення 2000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 40.63 грн |
| S27KS0642GABHA020 |
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Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
товару немає в наявності
Мінімальне замовлення: 1690 шт
В кошику
од. на суму грн.
| S25FL256LAGBHA020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: QUAD SPI
Kind of interface: serial
Application: automotive
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: QUAD SPI
Kind of interface: serial
Application: automotive
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
товару немає в наявності
Мінімальне замовлення: 338 шт
В кошику
од. на суму грн.
| S25FL256LAGBHA023 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Interface: QUAD SPI
Kind of interface: serial
Application: automotive
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Interface: QUAD SPI
Kind of interface: serial
Application: automotive
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| S26KS128SDPBHA020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Application: automotive
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Application: automotive
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
товару немає в наявності
Мінімальне замовлення: 1690 шт
В кошику
од. на суму грн.
| S26KS256SDPBHA020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Application: automotive
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Application: automotive
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
товару немає в наявності
Мінімальне замовлення: 1690 шт
В кошику
од. на суму грн.
| S26KS256SDPBHA023 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Application: automotive
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Application: automotive
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| S26KS512SDPBHA020 |
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Application: automotive
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Application: automotive
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
товару немає в наявності
Мінімальне замовлення: 1690 шт
В кошику
од. на суму грн.
| S27KL0643DPBHA020 |
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Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
Мінімальне замовлення: 3380 шт
В кошику
од. на суму грн.
| S27KL0643DPBHA023 |
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Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| S27KS0642GABHA023 |
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Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; 1.7÷2VDC
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; 1.7÷2VDC
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| S27KS0643GABHA023 |
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Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; 1.7÷2VDC
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; 1.7÷2VDC
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| S29GL512S10DHA023 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Access time: 100ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Interface: CFI; parallel
Kind of interface: parallel
Application: automotive
Operating voltage: 2.7...3.6V
Output voltage: 2.7...3.6V DC
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Access time: 100ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Interface: CFI; parallel
Kind of interface: parallel
Application: automotive
Operating voltage: 2.7...3.6V
Output voltage: 2.7...3.6V DC
товару немає в наявності
Мінімальне замовлення: 2200 шт
В кошику
од. на суму грн.
| S70KL1282DPBHA020 |
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Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
Мінімальне замовлення: 3380 шт
В кошику
од. на суму грн.
| S70KL1282DPBHA023 |
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Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| S70KS1282GABHA023 |
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Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| S80KS2563GABHA020 |
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Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
товару немає в наявності
Мінімальне замовлення: 676 шт
В кошику
од. на суму грн.
| S80KS5122GABHA020 |
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Виробник: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
товару немає в наявності
Мінімальне замовлення: 676 шт
В кошику
од. на суму грн.
| IPD60R600P7ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Drain current: 4A
Pulsed drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 30W
Drain-source voltage: 600V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: N-MOSFET
Case: PG-TO252-3
Polarisation: unipolar
Gate charge: 9nC
On-state resistance: 0.6Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Drain current: 4A
Pulsed drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 30W
Drain-source voltage: 600V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: N-MOSFET
Case: PG-TO252-3
Polarisation: unipolar
Gate charge: 9nC
On-state resistance: 0.6Ω
товару немає в наявності
В кошику
од. на суму грн.
| BCW66KFE6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| BCW66KGE6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 800mA; SC59; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Case: SC59
Current gain: 160
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 800mA; SC59; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Case: SC59
Current gain: 160
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IRFSL3207ZPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 88 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 302.69 грн |
| 10+ | 205.62 грн |
| 25+ | 170.80 грн |
| 50+ | 149.24 грн |
| IPD25N06S4L30ATMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 17A; Idm: 92A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 92A
Power dissipation: 29W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 17A; Idm: 92A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 92A
Power dissipation: 29W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BTS3125EJ |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 0.25Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 0.25Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
товару немає в наявності
В кошику
од. на суму грн.
| KP229E3111XTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Pressure Sensors
Description: Sensor: pressure; 20÷300kPa; absolute; OUT: analogue voltage; SMT
Mounting: SMT
Type of sensor: pressure
Operating temperature: -40...140°C
Supply voltage: 4.5...5.5V DC
Pressure measuring range: 20...300kPa
Operation mode: absolute
Output configuration: analogue voltage
Category: Pressure Sensors
Description: Sensor: pressure; 20÷300kPa; absolute; OUT: analogue voltage; SMT
Mounting: SMT
Type of sensor: pressure
Operating temperature: -40...140°C
Supply voltage: 4.5...5.5V DC
Pressure measuring range: 20...300kPa
Operation mode: absolute
Output configuration: analogue voltage
товару немає в наявності
В кошику
од. на суму грн.
| IHW20N120R5XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 144W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 144W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
на замовлення 67 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 214.74 грн |
| 10+ | 176.60 грн |
| BSC0504NSIATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 30W
Drain current: 64A
Case: PG-TDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 30W
Drain current: 64A
Case: PG-TDSON-8
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| PVI5080NPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: photodiode; 4kV; DIP8; PVI-NPbF
Manufacturer series: PVI-NPbF
Case: DIP8
Mounting: THT
Type of optocoupler: optocoupler
Kind of output: photodiode
Turn-off time: 220µs
Turn-on time: 0.3ms
Number of channels: 1
Insulation voltage: 4kV
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: photodiode; 4kV; DIP8; PVI-NPbF
Manufacturer series: PVI-NPbF
Case: DIP8
Mounting: THT
Type of optocoupler: optocoupler
Kind of output: photodiode
Turn-off time: 220µs
Turn-on time: 0.3ms
Number of channels: 1
Insulation voltage: 4kV
на замовлення 85 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 396.45 грн |
| 5+ | 337.45 грн |
| 25+ | 296.00 грн |
| FM28V020-SG |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 2÷3.6VDC
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: parallel 8bit
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Access time: 70ns
Case: SO28
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 2÷3.6VDC
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: parallel 8bit
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Access time: 70ns
Case: SO28
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| FM28V020-T28G |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 2÷3.6VDC
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: parallel 8bit
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Access time: 70ns
Case: TSOP28
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 2÷3.6VDC
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: parallel 8bit
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Access time: 70ns
Case: TSOP28
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| 2DIB0400FXUMA1 |
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на замовлення 2500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 43.31 грн |
| CY62157EV30LL-45ZSXIT |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.2...3.6V
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.2...3.6V
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IDH08G65C5 |
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; PG-TO220-2; 76W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 60A
Leakage current: 1.6µA
Power dissipation: 76W
Kind of package: tube
Heatsink thickness: 1.17...137mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; PG-TO220-2; 76W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 60A
Leakage current: 1.6µA
Power dissipation: 76W
Kind of package: tube
Heatsink thickness: 1.17...137mm
на замовлення 437 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 240.19 грн |
| 50+ | 208.94 грн |
| S29GL01GS11DHIV10 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
товару немає в наявності
Мінімальне замовлення: 260 шт
В кошику
од. на суму грн.
| IPA90R500C3XKSA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 11A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 34W
Case: TO220FP
On-state resistance: 0.5Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 68nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 11A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 34W
Case: TO220FP
On-state resistance: 0.5Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 68nC
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| IPA90R800C3XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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| CY7C64225-28PVXC |
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Виробник: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface; USB; SSOP28; 27mA; ESD; RS232
Type of integrated circuit: interface
Interface: USB
Case: SSOP28
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: 0...70°C
Number of channels: 1
DC supply current: 27mA
Version: ESD
Communictions protocol: RS232
Category: USB interfaces - integrated circuits
Description: IC: interface; USB; SSOP28; 27mA; ESD; RS232
Type of integrated circuit: interface
Interface: USB
Case: SSOP28
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: 0...70°C
Number of channels: 1
DC supply current: 27mA
Version: ESD
Communictions protocol: RS232
на замовлення 2565 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 47+ | 247.33 грн |
| 141+ | 206.45 грн |
| IRG7PH44K10D-EPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 70A; 320W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 70A
Power dissipation: 320W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 70A; 320W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 70A
Power dissipation: 320W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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| IRFP7537PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 172A; 230W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 172A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 172A; 230W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 172A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
на замовлення 46 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 175.01 грн |
| 4+ | 136.80 грн |
| 10+ | 114.42 грн |
| 25+ | 106.13 грн |
| BSS127IXTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21mA; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23
On-state resistance: 310Ω
Mounting: SMD
Gate charge: 0.65nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21mA; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21mA
Power dissipation: 0.5W
Case: SOT23
On-state resistance: 310Ω
Mounting: SMD
Gate charge: 0.65nC
Kind of channel: enhancement
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Мінімальне замовлення: 3000 шт
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| S25FL128SAGMFIG01 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 133MHz; 2.7÷3.6V; SO16; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 133MHz; 2.7÷3.6V; SO16; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 88 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 322.34 грн |
| CY7C65217-24LTXI |
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Виробник: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x7,I2C,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x7; I2C; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: in-tray; tube
Case: QFN24
Mounting: SMD
Operating temperature: -40...85°C
Number of ports: 1
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x7,I2C,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x7; I2C; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: in-tray; tube
Case: QFN24
Mounting: SMD
Operating temperature: -40...85°C
Number of ports: 1
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Мінімальне замовлення: 4900 шт
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| CY7C65217-24LTXIT |
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Виробник: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x7,I2C,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x7; I2C; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: reel; tape
Case: QFN24
Mounting: SMD
Operating temperature: -40...85°C
Category: USB interfaces - integrated circuits
Description: IC: USB interface; GPIO x7,I2C,UART; USB controller; Full Speed
Type of integrated circuit: USB interface
Interface: GPIO x7; I2C; UART
Kind of integrated circuit: USB controller
USB speed: Full Speed
Data transfer rate: 12Mbps
Supply voltage: 1.71...5.5V DC
Kind of package: reel; tape
Case: QFN24
Mounting: SMD
Operating temperature: -40...85°C
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Мінімальне замовлення: 2500 шт
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| BSC072N08NS5ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 74A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 74A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 74A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| BCX70KE6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
товару немає в наявності
Мінімальне замовлення: 48000 шт
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| BCX70JE6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 330mW; SC59
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SC59
Mounting: SMD
Frequency: 250MHz
Current gain: 250
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 330mW; SC59
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SC59
Mounting: SMD
Frequency: 250MHz
Current gain: 250
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| FZ900R12KE4HOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: AG-62MMES
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Power dissipation: 4.3kW
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: AG-62MMES
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Power dissipation: 4.3kW
Mechanical mounting: screw
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| IPA50R280CEXKSA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.5A; 30.4W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.28Ω
Drain current: 7.5A
Power dissipation: 30.4W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.5A; 30.4W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.28Ω
Drain current: 7.5A
Power dissipation: 30.4W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
на замовлення 1769 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 102.68 грн |
| 10+ | 58.37 грн |
| 50+ | 45.27 грн |
| 100+ | 42.53 грн |
| IPA50R950CEXKSA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; 25.7W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.95Ω
Drain current: 2.4A
Power dissipation: 25.7W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; 25.7W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.95Ω
Drain current: 2.4A
Power dissipation: 25.7W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
на замовлення 105 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 81.25 грн |
| 11+ | 39.80 грн |
| 25+ | 36.48 грн |
| 50+ | 34.16 грн |
| 100+ | 32.34 грн |
| IPA50R190CEXKSA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 32W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.19Ω
Drain current: 18.5A
Power dissipation: 32W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.5A; 32W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.19Ω
Drain current: 18.5A
Power dissipation: 32W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
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| IPA50R500CEXKSA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; 28W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.5Ω
Drain current: 3.4A
Power dissipation: 28W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; 28W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.5Ω
Drain current: 3.4A
Power dissipation: 28W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
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| IPA50R520CPXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.52Ω
Drain current: 7.1A
Power dissipation: 66W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; TO220FP
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.52Ω
Drain current: 7.1A
Power dissipation: 66W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Case: TO220FP
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| IPA50R800CEXKSA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.6A; 26.4W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.6A
Power dissipation: 26.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.6A; 26.4W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.6A
Power dissipation: 26.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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| BCR119SH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 100mA; 250mW; SOT363; 4.7kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT363
Type of transistor: NPN x2
Collector current: 0.1A
Power dissipation: 0.25W
Current gain: 120
Base resistor: 4.7kΩ
Frequency: 150MHz
Application: automotive industry
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 100mA; 250mW; SOT363; 4.7kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT363
Type of transistor: NPN x2
Collector current: 0.1A
Power dissipation: 0.25W
Current gain: 120
Base resistor: 4.7kΩ
Frequency: 150MHz
Application: automotive industry
Polarisation: bipolar
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| BTS72002EPCXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 2; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 0.12Ω
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Kind of package: reel; tape
Operating temperature: -40...150°C
Turn-off time: 0.15ms
Turn-on time: 170µs
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.2A; Ch: 2; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 0.12Ω
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Kind of package: reel; tape
Operating temperature: -40...150°C
Turn-off time: 0.15ms
Turn-on time: 170µs
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| IRFB38N20DPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 44A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 44A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 133 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 224.12 грн |
| 5+ | 158.36 грн |
| 10+ | 141.78 грн |
| 50+ | 110.27 грн |
| 100+ | 100.32 грн |





















