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CY62138EV30LL-45BVXIT INFINEON TECHNOLOGIES ?docID=45534 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; VFBGA36; parallel
Operating temperature: -40...85°C
Case: VFBGA36
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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CY62138FV30LL-45ZAXAT INFINEON TECHNOLOGIES ?docID=49121 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel
Operating temperature: -40...85°C
Case: STSOP32
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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CY62138FV30LL-45ZAXIT INFINEON TECHNOLOGIES ?docID=49121 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel
Operating temperature: -40...85°C
Case: STSOP32
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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1EDC40I12AHXUMA1 1EDC40I12AHXUMA1 INFINEON TECHNOLOGIES 1EDCxxX12AH.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -4...4A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
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IPD35N10S3L26ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I70N10S3L_12-DS-01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9085629c594b&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
Pulsed drain current: 140A
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BSC035N10NS5ATMA1 BSC035N10NS5ATMA1 INFINEON TECHNOLOGIES BSC035N10NS5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
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XMC4700 RELAX KIT XMC4700 RELAX KIT INFINEON TECHNOLOGIES xmc4700_4800.pdf Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4700; Comp: XMC4700-F144
Kit contents: development board with XMCmicrocontroller
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Application: building automation; CAV; motors; photovoltaics
Kind of architecture: Cortex M4
Type of development kit: ARM Infineon
Family: XMC4700
Components: XMC4700-F144
Number of add-on connectors: 1
Kind of connector: pin strips; RJ45; USB B micro x2
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SMBD914E6327HTSA1 SMBD914E6327HTSA1 INFINEON TECHNOLOGIES SMBD914E6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; SOT23; 370mW; reel,tape
Max. off-state voltage: 100V
Load current: 0.25A
Semiconductor structure: single diode
Power dissipation: 0.37W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: fast switching
Mounting: SMD
Case: SOT23
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
2+205.82 грн
Мінімальне замовлення: 2
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S25HS01GTDPBHI033 INFINEON TECHNOLOGIES en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S25HS01GTDPMHI013 INFINEON TECHNOLOGIES en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S26HS01GTGABHA030 INFINEON TECHNOLOGIES Infineon-S26HS01GTGABHM020-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f52f2f5182c91 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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PVI5033RS-TPBF PVI5033RS-TPBF INFINEON TECHNOLOGIES PVI5033RS-TPBF.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Manufacturer series: PVI5033RPbF
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PVI5033RSPBF PVI5033RSPBF INFINEON TECHNOLOGIES PVI5033RPBF.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 2.5ms
Turn-off time: 5ms
Manufacturer series: PVI5033RPbF
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IFX1051LEXUMA1 IFX1051LEXUMA1 INFINEON TECHNOLOGIES IFX1051LE.pdf Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC; PG-TSON-8; -40÷125°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC
Case: PG-TSON-8
Interface: CAN
Mounting: SMD
Operating temperature: -40...125°C
DC supply current: 60mA
Kind of package: reel; tape
Number of receivers: 1
Number of transmitters: 1
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ITS711L1 ITS711L1 INFINEON TECHNOLOGIES ITS711L1.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.7A; Ch: 4; N-Channel; SMD; DSO20
Supply voltage: 5...34V DC
Output voltage: 2...4V
Output current: 1.7A
Type of integrated circuit: power switch
Number of channels: 4
Kind of output: N-Channel
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Case: DSO20
на замовлення 824 шт:
термін постачання 21-30 дні (днів)
1+445.40 грн
5+210.23 грн
12+198.77 грн
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IDP12E120XKSA1 INFINEON TECHNOLOGIES IDP12E120_v2_3G[1].pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30432313ff5e012374c3dade485b Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 17A; tube; Ifsm: 63A; TO220-2; 46W
Case: TO220-2
Max. off-state voltage: 1.2kV
Max. load current: 42.5A
Load current: 17A
Semiconductor structure: single diode
Max. forward impulse current: 63A
Power dissipation: 46W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: THT
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IPN80R4K5P7ATMA1 IPN80R4K5P7ATMA1 INFINEON TECHNOLOGIES IPN80R4K5P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 6W; PG-SOT223; ESD
Drain current: 1A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 6W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 4nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
на замовлення 2167 шт:
термін постачання 21-30 дні (днів)
8+54.34 грн
10+40.06 грн
12+33.87 грн
30+31.19 грн
50+29.20 грн
100+28.36 грн
Мінімальне замовлення: 8
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IPN80R3K3P7ATMA1 IPN80R3K3P7ATMA1 INFINEON TECHNOLOGIES IPN80R3K3P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 6.1W; PG-SOT223; ESD
Drain current: 1.3A
On-state resistance: 3.3Ω
Type of transistor: N-MOSFET
Power dissipation: 6.1W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 6nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
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IPN80R1K2P7ATMA1 IPN80R1K2P7ATMA1 INFINEON TECHNOLOGIES IPN80R1K2P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 6.8W; PG-SOT223; ESD
Drain current: 3.1A
On-state resistance: 1.2Ω
Type of transistor: N-MOSFET
Power dissipation: 6.8W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 11nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
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IPN80R2K4P7ATMA1 IPN80R2K4P7ATMA1 INFINEON TECHNOLOGIES IPN80R2K4P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 6.3W; PG-SOT223; ESD
Drain current: 1.7A
On-state resistance: 2.4Ω
Type of transistor: N-MOSFET
Power dissipation: 6.3W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 8nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
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IPN80R600P7ATMA1 IPN80R600P7ATMA1 INFINEON TECHNOLOGIES IPN80R600P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 7.4W; PG-SOT223; ESD
Drain current: 5.5A
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Power dissipation: 7.4W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 20nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
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IPN80R750P7ATMA1 IPN80R750P7ATMA1 INFINEON TECHNOLOGIES IPN80R750P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 7.2W; PG-SOT223; ESD
Drain current: 4.6A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 7.2W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 17nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
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IRF8915TRPBF IRF8915TRPBF INFINEON TECHNOLOGIES irf8915pbf.pdf?fileId=5546d462533600a401535610fd2d1d91 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.1A; Idm: 71A; 2W; SO8
Mounting: SMD
Case: SO8
Drain-source voltage: 20V
Drain current: 7.1A
On-state resistance: 18.3mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 71A
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DD100N16S DD100N16S INFINEON TECHNOLOGIES DD100N16S.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 130A; BG-SB20-1; screw
Max. forward impulse current: 2.5kA
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: BG-SB20-1
Max. forward voltage: 1.6V
Load current: 130A
Semiconductor structure: double series
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
1+1811.25 грн
2+1590.14 грн
12+1568.73 грн
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DZ540N22K DZ540N22K INFINEON TECHNOLOGIES DZ540N22K.pdf Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 540A; BG-PB501-1; screw
Max. off-state voltage: 2.2kV
Load current: 540A
Case: BG-PB501-1
Max. forward impulse current: 16.5kA
Max. forward voltage: 0.78V
Semiconductor structure: single diode
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
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DZ540N26K DZ540N26K INFINEON TECHNOLOGIES DZ540N26K.pdf Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 540A; BG-PB501-1; screw
Max. off-state voltage: 2.6kV
Load current: 540A
Case: BG-PB501-1
Max. forward impulse current: 16.5kA
Max. forward voltage: 1.64V
Semiconductor structure: single diode
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
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DD540N26K DD540N26K INFINEON TECHNOLOGIES DD540N2xK.pdf Category: Diode modules
Description: Module: diode; double series; 2.6kV; If: 540A; BG-PB60AT-1; screw
Max. off-state voltage: 2.6kV
Load current: 540A
Case: BG-PB60AT-1
Max. forward impulse current: 16.5kA
Max. forward voltage: 1.48V
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
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BC847BWH6327XTSA1 BC847BWH6327XTSA1 INFINEON TECHNOLOGIES bc847_8_9_bc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
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IRFR9N20DTRPBF IRFR9N20DTRPBF INFINEON TECHNOLOGIES irfr9n20dpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.4A; 86W; DPAK
Case: DPAK
Mounting: SMD
Drain-source voltage: 200V
Drain current: 9.4A
Type of transistor: N-MOSFET
Power dissipation: 86W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
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IPW65R041CFDFKSA1 IPW65R041CFDFKSA1 INFINEON TECHNOLOGIES IPW65R041CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 68.5A; 500W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 68.5A
Power dissipation: 500W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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S25FS512SDSNFB010 INFINEON TECHNOLOGIES Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 80MHz
Operating voltage: 1.7...2V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
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S25FS512SDSNFI013 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 80MHz
Operating voltage: 1.7...2V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S25FS512SDSNFV011 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8; tube
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 80MHz
Operating voltage: 1.7...2V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
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IRF8113TRPBF IRF8113TRPBF INFINEON TECHNOLOGIES irf8113pbf.pdf?fileId=5546d462533600a40153560ceb611d50 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.8A; Idm: 135A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.8A
Pulsed drain current: 135A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Kind of channel: enhancement
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BC857BE6327 BC857BE6327 INFINEON TECHNOLOGIES BC857B-DTE.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
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IRF7853TRPBF IRF7853TRPBF INFINEON TECHNOLOGIES irf7853pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.3A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.3A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)
4+108.68 грн
10+68.65 грн
27+34.63 грн
73+32.72 грн
2000+31.50 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRF7351TRPBF IRF7351TRPBF INFINEON TECHNOLOGIES irf7351pbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 8A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 3600 шт:
термін постачання 21-30 дні (днів)
4+120.20 грн
10+76.45 грн
21+44.34 грн
56+42.05 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRF7726TRPBF IRF7726TRPBF INFINEON TECHNOLOGIES irf7726pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 1.79W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Power dissipation: 1.79W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF7530TRPBF IRF7530TRPBF INFINEON TECHNOLOGIES irf7530pbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.4A; 1.3W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.4A
Power dissipation: 1.3W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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CY62157EV30LL-45BVI INFINEON TECHNOLOGIES Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
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CY62157EV30LL-45BVIT INFINEON TECHNOLOGIES Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
товару немає в наявності
В кошику  од. на суму  грн.
CY62157EV30LL-45BVXA INFINEON TECHNOLOGIES Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
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CY62157EV30LL-45ZSXA INFINEON TECHNOLOGIES Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
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В кошику  од. на суму  грн.
CY62157EV30LL-45ZXIT INFINEON TECHNOLOGIES Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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CY62157EV30LL-55ZSXE INFINEON TECHNOLOGIES Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 55ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
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BTT60302EKAXUMA1 BTT60302EKAXUMA1 INFINEON TECHNOLOGIES BTT60302EKA-DTE.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; PROFET™+ 24V
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-14-40 EP
On-state resistance: 62mΩ
Supply voltage: 5...36V DC
Technology: PROFET™+ 24V
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CY7C1612KV18-250BZXC INFINEON TECHNOLOGIES Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 250MHz
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CY7C1612KV18-300BZXI INFINEON TECHNOLOGIES Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 300MHz
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CY7C1612KV18-360BZXC INFINEON TECHNOLOGIES Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 360MHz
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CY7C1615KV18-250BZXC INFINEON TECHNOLOGIES Infineon-CY7C1613KV18_CY7C1615KV18_144-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec23aab3726 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 4Mx36bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 4Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 250MHz
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IHW30N110R3FKSA1 IHW30N110R3FKSA1 INFINEON TECHNOLOGIES IHW30N110R3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.1kV; 30A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.1kV
Collector current: 30A
Power dissipation: 166W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Turn-off time: 470ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
2+285.68 грн
3+233.93 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC016N06NSATMA1 BSC016N06NSATMA1 INFINEON TECHNOLOGIES BSC016N06NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
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PVI5013RSPBF PVI5013RSPBF INFINEON TECHNOLOGIES pvi5013r.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Turn-on time: 5ms
Turn-off time: 25µs
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Manufacturer series: PVI5013RPbF
Type of optocoupler: optocoupler
Mounting: SMD
Case: Gull wing 8
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
2+205.82 грн
5+172.01 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD60R3K3C6ATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R3K3C6-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129f96874465b3a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.1A; Idm: 4A; 18.1W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.1A
Pulsed drain current: 4A
Power dissipation: 18.1W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: SMD
Kind of channel: enhancement
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BFP520H6327 BFP520H6327 INFINEON TECHNOLOGIES BFP520.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 2.5V; 40mA; 0.1W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 2.5V
Collector current: 40mA
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 45GHz
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IRS2982STRPBF IRS2982STRPBF INFINEON TECHNOLOGIES IRS2982S-DTE.pdf Category: LED drivers
Description: IC: driver; flyback; SMPS controller,LED driver; PG-DSO-8; Ch: 1
Case: PG-DSO-8
Operating voltage: 12.8...18V DC
Output current: 200...400mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: PWM
Kind of integrated circuit: LED driver; SMPS controller
Topology: flyback
Mounting: SMD
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IPB042N10N3GATMA1 IPB042N10N3GATMA1 INFINEON TECHNOLOGIES IPB042N10N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
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IMZ120R045M1XKSA1 INFINEON TECHNOLOGIES Infineon-IMZ120R045M1-DS-v02_02-EN.pdf?fileId=5546d46269bda8df0169de350d7b3a3e Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Power dissipation: 114W
Mounting: THT
Kind of package: tube
Case: TO247-4
Polarisation: unipolar
Drain-source voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Gate-source voltage: -10...20V
Drain current: 36A
Pulsed drain current: 130A
On-state resistance: 59mΩ
Type of transistor: N-MOSFET
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IDP30E120XKSA1 IDP30E120XKSA1 INFINEON TECHNOLOGIES IDP30E120XKSA1.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO220-2
на замовлення 32 шт:
термін постачання 21-30 дні (днів)
2+232.17 грн
8+113.91 грн
22+107.79 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPW65R420CFDFKSA1 IPW65R420CFDFKSA1 INFINEON TECHNOLOGIES IPW65R420CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-TO247-3
Mounting: THT
Drain-source voltage: 650V
Drain current: 8.7A
On-state resistance: 0.42Ω
Power dissipation: 83.3W
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
2+206.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY62138EV30LL-45BVXIT ?docID=45534
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; VFBGA36; parallel
Operating temperature: -40...85°C
Case: VFBGA36
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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CY62138FV30LL-45ZAXAT ?docID=49121
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel
Operating temperature: -40...85°C
Case: STSOP32
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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CY62138FV30LL-45ZAXIT ?docID=49121
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 45ns; STSOP32; parallel
Operating temperature: -40...85°C
Case: STSOP32
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 256kx8bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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1EDC40I12AHXUMA1 1EDCxxX12AH.pdf
1EDC40I12AHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -4...4A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
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IPD35N10S3L26ATMA1 Infineon-IPP_B_I70N10S3L_12-DS-01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9085629c594b&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
Pulsed drain current: 140A
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BSC035N10NS5ATMA1 BSC035N10NS5-DTE.pdf
BSC035N10NS5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
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XMC4700 RELAX KIT xmc4700_4800.pdf
XMC4700 RELAX KIT
Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4700; Comp: XMC4700-F144
Kit contents: development board with XMCmicrocontroller
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Application: building automation; CAV; motors; photovoltaics
Kind of architecture: Cortex M4
Type of development kit: ARM Infineon
Family: XMC4700
Components: XMC4700-F144
Number of add-on connectors: 1
Kind of connector: pin strips; RJ45; USB B micro x2
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SMBD914E6327HTSA1 SMBD914E6327HTSA1.pdf
SMBD914E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; SOT23; 370mW; reel,tape
Max. off-state voltage: 100V
Load current: 0.25A
Semiconductor structure: single diode
Power dissipation: 0.37W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: fast switching
Mounting: SMD
Case: SOT23
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+205.82 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S25HS01GTDPBHI033 en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S25HS01GTDPMHI013 en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S26HS01GTGABHA030 Infineon-S26HS01GTGABHM020-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f52f2f5182c91
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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PVI5033RS-TPBF PVI5033RS-TPBF.pdf
PVI5033RS-TPBF
Виробник: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Manufacturer series: PVI5033RPbF
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PVI5033RSPBF PVI5033RPBF.pdf
PVI5033RSPBF
Виробник: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 2.5ms
Turn-off time: 5ms
Manufacturer series: PVI5033RPbF
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IFX1051LEXUMA1 IFX1051LE.pdf
IFX1051LEXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC; PG-TSON-8; -40÷125°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC
Case: PG-TSON-8
Interface: CAN
Mounting: SMD
Operating temperature: -40...125°C
DC supply current: 60mA
Kind of package: reel; tape
Number of receivers: 1
Number of transmitters: 1
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ITS711L1 ITS711L1.pdf
ITS711L1
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.7A; Ch: 4; N-Channel; SMD; DSO20
Supply voltage: 5...34V DC
Output voltage: 2...4V
Output current: 1.7A
Type of integrated circuit: power switch
Number of channels: 4
Kind of output: N-Channel
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Mounting: SMD
Case: DSO20
на замовлення 824 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+445.40 грн
5+210.23 грн
12+198.77 грн
В кошику  од. на суму  грн.
IDP12E120XKSA1 IDP12E120_v2_3G[1].pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30432313ff5e012374c3dade485b
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 17A; tube; Ifsm: 63A; TO220-2; 46W
Case: TO220-2
Max. off-state voltage: 1.2kV
Max. load current: 42.5A
Load current: 17A
Semiconductor structure: single diode
Max. forward impulse current: 63A
Power dissipation: 46W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: THT
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IPN80R4K5P7ATMA1 IPN80R4K5P7.pdf
IPN80R4K5P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 6W; PG-SOT223; ESD
Drain current: 1A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 6W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 4nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
на замовлення 2167 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+54.34 грн
10+40.06 грн
12+33.87 грн
30+31.19 грн
50+29.20 грн
100+28.36 грн
Мінімальне замовлення: 8
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IPN80R3K3P7ATMA1 IPN80R3K3P7.pdf
IPN80R3K3P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 6.1W; PG-SOT223; ESD
Drain current: 1.3A
On-state resistance: 3.3Ω
Type of transistor: N-MOSFET
Power dissipation: 6.1W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 6nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
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IPN80R1K2P7ATMA1 IPN80R1K2P7.pdf
IPN80R1K2P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 6.8W; PG-SOT223; ESD
Drain current: 3.1A
On-state resistance: 1.2Ω
Type of transistor: N-MOSFET
Power dissipation: 6.8W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 11nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
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IPN80R2K4P7ATMA1 IPN80R2K4P7.pdf
IPN80R2K4P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 6.3W; PG-SOT223; ESD
Drain current: 1.7A
On-state resistance: 2.4Ω
Type of transistor: N-MOSFET
Power dissipation: 6.3W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 8nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
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IPN80R600P7ATMA1 IPN80R600P7.pdf
IPN80R600P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 7.4W; PG-SOT223; ESD
Drain current: 5.5A
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Power dissipation: 7.4W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 20nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
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IPN80R750P7ATMA1 IPN80R750P7.pdf
IPN80R750P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 7.2W; PG-SOT223; ESD
Drain current: 4.6A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 7.2W
Polarisation: unipolar
Kind of package: reel
Version: ESD
Gate charge: 17nC
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-SOT223
Drain-source voltage: 800V
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IRF8915TRPBF irf8915pbf.pdf?fileId=5546d462533600a401535610fd2d1d91
IRF8915TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 7.1A; Idm: 71A; 2W; SO8
Mounting: SMD
Case: SO8
Drain-source voltage: 20V
Drain current: 7.1A
On-state resistance: 18.3mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 71A
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DD100N16S DD100N16S.pdf
DD100N16S
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 130A; BG-SB20-1; screw
Max. forward impulse current: 2.5kA
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: BG-SB20-1
Max. forward voltage: 1.6V
Load current: 130A
Semiconductor structure: double series
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1811.25 грн
2+1590.14 грн
12+1568.73 грн
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DZ540N22K DZ540N22K.pdf
DZ540N22K
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 540A; BG-PB501-1; screw
Max. off-state voltage: 2.2kV
Load current: 540A
Case: BG-PB501-1
Max. forward impulse current: 16.5kA
Max. forward voltage: 0.78V
Semiconductor structure: single diode
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
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DZ540N26K DZ540N26K.pdf
DZ540N26K
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 540A; BG-PB501-1; screw
Max. off-state voltage: 2.6kV
Load current: 540A
Case: BG-PB501-1
Max. forward impulse current: 16.5kA
Max. forward voltage: 1.64V
Semiconductor structure: single diode
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
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DD540N26K DD540N2xK.pdf
DD540N26K
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.6kV; If: 540A; BG-PB60AT-1; screw
Max. off-state voltage: 2.6kV
Load current: 540A
Case: BG-PB60AT-1
Max. forward impulse current: 16.5kA
Max. forward voltage: 1.48V
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
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BC847BWH6327XTSA1 bc847_8_9_bc850.pdf
BC847BWH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
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IRFR9N20DTRPBF irfr9n20dpbf.pdf
IRFR9N20DTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.4A; 86W; DPAK
Case: DPAK
Mounting: SMD
Drain-source voltage: 200V
Drain current: 9.4A
Type of transistor: N-MOSFET
Power dissipation: 86W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
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IPW65R041CFDFKSA1 IPW65R041CFD-DTE.pdf
IPW65R041CFDFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 68.5A; 500W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 68.5A
Power dissipation: 500W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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S25FS512SDSNFB010 Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 80MHz
Operating voltage: 1.7...2V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
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S25FS512SDSNFI013
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 80MHz
Operating voltage: 1.7...2V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S25FS512SDSNFV011
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8; tube
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 80MHz
Operating voltage: 1.7...2V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
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IRF8113TRPBF description irf8113pbf.pdf?fileId=5546d462533600a40153560ceb611d50
IRF8113TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.8A; Idm: 135A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.8A
Pulsed drain current: 135A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Kind of channel: enhancement
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BC857BE6327 BC857B-DTE.pdf
BC857BE6327
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
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IRF7853TRPBF irf7853pbf.pdf
IRF7853TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.3A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.3A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+108.68 грн
10+68.65 грн
27+34.63 грн
73+32.72 грн
2000+31.50 грн
Мінімальне замовлення: 4
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IRF7351TRPBF irf7351pbf.pdf
IRF7351TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 8A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 3600 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+120.20 грн
10+76.45 грн
21+44.34 грн
56+42.05 грн
Мінімальне замовлення: 4
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IRF7726TRPBF irf7726pbf.pdf
IRF7726TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 1.79W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Power dissipation: 1.79W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRF7530TRPBF irf7530pbf.pdf
IRF7530TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.4A; 1.3W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.4A
Power dissipation: 1.3W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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CY62157EV30LL-45BVI Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
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CY62157EV30LL-45BVIT Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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CY62157EV30LL-45BVXA Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
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CY62157EV30LL-45ZSXA Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
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CY62157EV30LL-45ZXIT Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 45ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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CY62157EV30LL-55ZSXE Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 55ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
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BTT60302EKAXUMA1 BTT60302EKA-DTE.pdf
BTT60302EKAXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; PROFET™+ 24V
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-14-40 EP
On-state resistance: 62mΩ
Supply voltage: 5...36V DC
Technology: PROFET™+ 24V
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CY7C1612KV18-250BZXC Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 250MHz
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CY7C1612KV18-300BZXI Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 300MHz
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CY7C1612KV18-360BZXC Infineon-CY7C1625KV18_CY7C1612KV18_CY7C1614KV18_144-MBIT_QDR(R)_II_SRAM_TWO-WORD_BURST_ARCHITECTURE-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdd63830ca&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 8Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 8Mx18bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 360MHz
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CY7C1615KV18-250BZXC Infineon-CY7C1613KV18_CY7C1615KV18_144-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec23aab3726
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 144MbSRAM; 4Mx36bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 144Mb SRAM
Memory organisation: 4Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 250MHz
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IHW30N110R3FKSA1 IHW30N110R3.pdf
IHW30N110R3FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.1kV; 30A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.1kV
Collector current: 30A
Power dissipation: 166W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Turn-off time: 470ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+285.68 грн
3+233.93 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC016N06NSATMA1 BSC016N06NS-DTE.pdf
BSC016N06NSATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
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PVI5013RSPBF pvi5013r.pdf
PVI5013RSPBF
Виробник: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Turn-on time: 5ms
Turn-off time: 25µs
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Manufacturer series: PVI5013RPbF
Type of optocoupler: optocoupler
Mounting: SMD
Case: Gull wing 8
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+205.82 грн
5+172.01 грн
Мінімальне замовлення: 2
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IPD60R3K3C6ATMA1 Infineon-IPD60R3K3C6-DS-v02_00-en.pdf?fileId=db3a304329a0f6ee0129f96874465b3a
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.1A; Idm: 4A; 18.1W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.1A
Pulsed drain current: 4A
Power dissipation: 18.1W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: SMD
Kind of channel: enhancement
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BFP520H6327 BFP520.pdf
BFP520H6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 2.5V; 40mA; 0.1W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 2.5V
Collector current: 40mA
Power dissipation: 0.1W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 45GHz
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IRS2982STRPBF IRS2982S-DTE.pdf
IRS2982STRPBF
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; SMPS controller,LED driver; PG-DSO-8; Ch: 1
Case: PG-DSO-8
Operating voltage: 12.8...18V DC
Output current: 200...400mA
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: PWM
Kind of integrated circuit: LED driver; SMPS controller
Topology: flyback
Mounting: SMD
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IPB042N10N3GATMA1 IPB042N10N3G-DTE.pdf
IPB042N10N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
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IMZ120R045M1XKSA1 Infineon-IMZ120R045M1-DS-v02_02-EN.pdf?fileId=5546d46269bda8df0169de350d7b3a3e
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Power dissipation: 114W
Mounting: THT
Kind of package: tube
Case: TO247-4
Polarisation: unipolar
Drain-source voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhancement
Gate-source voltage: -10...20V
Drain current: 36A
Pulsed drain current: 130A
On-state resistance: 59mΩ
Type of transistor: N-MOSFET
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IDP30E120XKSA1 IDP30E120XKSA1.pdf
IDP30E120XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; TO220-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO220-2
на замовлення 32 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+232.17 грн
8+113.91 грн
22+107.79 грн
Мінімальне замовлення: 2
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IPW65R420CFDFKSA1 IPW65R420CFD-DTE.pdf
IPW65R420CFDFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-TO247-3
Mounting: THT
Drain-source voltage: 650V
Drain current: 8.7A
On-state resistance: 0.42Ω
Power dissipation: 83.3W
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+206.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
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