Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (126522) > Сторінка 43 з 2109

Обрати Сторінку:   [  << Попередня Сторінка ]  1 38 39 40 41 42 43 44 45 46 47 48 210 420 630 840 1050 1260 1470 1680 1890 2100 2109  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність Ціна без ПДВ
IRFL1006PBF IRFL1006PBF Infineon Technologies IRFL1006PbF.pdf description Description: MOSFET N-CH 60V 1.6A SOT223
товару немає в наявності
В кошику  од. на суму  грн.
IRFL024ZPBF IRFL024ZPBF Infineon Technologies irfl024zpbf.pdf?fileId=5546d462533600a401535627dcd91fb2 description Description: MOSFET N-CH 55V 5.1A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 57.5mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLL2703PBF IRLL2703PBF Infineon Technologies IRSDS06555-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 30V 3.9A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFL4105PBF IRFL4105PBF Infineon Technologies irfl4105pbf.pdf?fileId=5546d462533600a401535627f48c1fb8 description Description: MOSFET N-CH 55V 3.7A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
IRU1010-33CSPBF IRU1010-33CSPBF Infineon Technologies iru1010-33.pdf Description: IC REG LINEAR 3.3V 1A 8SOIC
товару немає в наявності
В кошику  од. на суму  грн.
IRF7807APBF IRF7807APBF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH 30V 8.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF3000PBF IRF3000PBF Infineon Technologies irf3000pbf.pdf Description: MOSFET N-CH 300V 1.6A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 960mA, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 95 шт
В кошику  од. на суму  грн.
IRU3037ACSPBF IRU3037ACSPBF Infineon Technologies IRU3037%28A%20%2CPbF%29.pdf Description: IC REG CTRLR BUCK/BOOST 8SOIC
Number of Outputs: 1
Part Status: Obsolete
Clock Sync: No
Duty Cycle (Max): 90%
Output Phases: 1
Control Features: Enable, Soft Start
Synchronous Rectifier: Yes
Supplier Device Package: 8-SOIC
Topology: Buck, Boost
Frequency - Switching: 400kHz
Output Configuration: Positive
Operating Temperature: 0°C ~ 70°C (TA)
Function: Step-Up, Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Voltage - Supply (Vcc/Vdd): 4.2V ~ 25V
товару немає в наявності
 Мінімальне замовлення: 380 шт
В кошику  од. на суму  грн.
IRF7467PBF IRF7467PBF Infineon Technologies IRF7467PBF.pdf Description: MOSFET N-CH 30V 11A 8SO
товару немає в наявності
 Мінімальне замовлення: 4085 шт
В кошику  од. на суму  грн.
IRF7324PBF IRF7324PBF Infineon Technologies irf7324pbf.pdf?fileId=5546d462533600a4015355f5f0861b4b Description: MOSFET 2P-CH 20V 9A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 15V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
товару немає в наявності
В кошику  од. на суму  грн.
IR2172SPBF IR2172SPBF Infineon Technologies ir2171.pdf Description: IC CURRENT SENSE 8SOIC
Supplier Device Package: 8-SOIC
Operating Temperature: -40°C ~ 125°C
Current - Output: 20mA
Voltage - Input: 9.5V ~ 20V
Function: Current Sense
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
IR2302SPBF IR2302SPBF Infineon Technologies ir2302.pdf?fileId=5546d462533600a4015355c988b216de Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Not For New Designs
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 130ns, 50ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
на замовлення 2929 шт:
термін постачання 21-31 дні (днів)
2+164.60 грн
10+117.90 грн
95+96.68 грн
190+86.73 грн
285+84.73 грн
570+81.80 грн
1045+78.35 грн
2565+75.83 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRLML5103TRPBF IRLML5103TRPBF Infineon Technologies infineon-irlml5103-datasheet-en.pdf Description: MOSFET P-CH 30V 760MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
на замовлення 109284 шт:
термін постачання 21-31 дні (днів)
10+31.35 грн
17+18.64 грн
50+13.47 грн
100+11.05 грн
500+8.25 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
IRLML2803TRPBF IRLML2803TRPBF Infineon Technologies infineon-irlml2803-datasheet-en.pdf Description: MOSFET N-CH 30V 1.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 910mA, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
на замовлення 63000 шт:
термін постачання 21-31 дні (днів)
12+28.22 грн
19+16.38 грн
50+11.80 грн
100+9.67 грн
500+7.19 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
IRLML6402TRPBF IRLML6402TRPBF Infineon Technologies irlml6402pbf-1.pdf Description: MOSFET P-CH 20V 3.7A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLML2502TRPBF IRLML2502TRPBF Infineon Technologies infineon-irlml2502-datasheet-en.pdf Description: MOSFET N-CH 20V 4.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLML2402TRPBF IRLML2402TRPBF Infineon Technologies irlml2402pbf.pdf?fileId=5546d462533600a401535664e5ef25fa Description: MOSFET N-CH 20V 1.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 930mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: Micro3™/SOT-23
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLML6401TRPBF IRLML6401TRPBF Infineon Technologies irlml6401pbf-1.pdf Description: MOSFET P-CH 12V 4.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.3A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLML6302TRPBF IRLML6302TRPBF Infineon Technologies irlml6302pbf.pdf?fileId=5546d462533600a4015356688c702627 Description: MOSFET P-CH 20V 780MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 780mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 610mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.45 V
Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLMS6802TRPBF IRLMS6802TRPBF Infineon Technologies irlms6802pbf.pdf?fileId=5546d462533600a401535669349a2654 Description: MOSFET P-CH 20V 5.6A MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1079 pF @ 10 V
на замовлення 412 шт:
термін постачання 21-31 дні (днів)
6+54.08 грн
10+32.08 грн
100+20.67 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
IRLMS2002TRPBF IRLMS2002TRPBF Infineon Technologies irlms2002pbf.pdf?fileId=5546d462533600a4015356690f42264a description Description: MOSFET N-CH 20V 6.5A MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro6™(SOT23-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
на замовлення 1993 шт:
термін постачання 21-31 дні (днів)
6+61.92 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
IRLMS1503TRPBF IRLMS1503TRPBF Infineon Technologies irlms1503pbf.pdf?fileId=5546d462533600a401535668f6282644 description Description: MOSFET N-CH 30V 3.2A MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 25 V
на замовлення 107 шт:
термін постачання 21-31 дні (днів)
7+45.46 грн
12+26.79 грн
100+17.17 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
IRLL014NTRPBF IRLL014NTRPBF Infineon Technologies irll014npbf.pdf?fileId=5546d462533600a401535664368425cf description Description: MOSFET N-CH 55V 2A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
на замовлення 3611 шт:
термін постачання 21-31 дні (днів)
6+58.00 грн
10+34.95 грн
50+25.59 грн
100+21.17 грн
500+16.16 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
IRLMS5703TRPBF IRLMS5703TRPBF Infineon Technologies irlms5703pbf.pdf?fileId=5546d462533600a401535669171c264c Description: MOSFET P-CH 30V 2.4A MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLMS6702TRPBF IRLMS6702TRPBF Infineon Technologies irlms6702pbf.pdf?fileId=5546d462533600a40153566923282650 Description: MOSFET P-CH 20V 2.4A MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFR3709ZTRPBF IRFR3709ZTRPBF Infineon Technologies irfr3709zpbf.pdf?fileId=5546d462533600a401535631a47a20c5 Description: MOSFET N-CH 30V 86A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFR9024NTRPBF IRFR9024NTRPBF Infineon Technologies irfr9024npbf.pdf?fileId=5546d462533600a401535635f91d2132 description Description: MOSFET P-CH 55V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 56901 шт:
термін постачання 21-31 дні (днів)
4+101.90 грн
10+61.82 грн
50+46.10 грн
100+38.48 грн
500+30.07 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRFR9120NTRPBF IRFR9120NTRPBF Infineon Technologies irfr9120npbf.pdf?fileId=5546d462533600a40153563607932138 description Description: MOSFET P-CH 100V 6.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 3.9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 1308 шт:
термін постачання 21-31 дні (днів)
4+98.76 грн
10+59.93 грн
50+44.59 грн
100+37.20 грн
500+29.03 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRFR024NTRPBF IRFR024NTRPBF Infineon Technologies irfr024npbf.pdf?fileId=5546d462533600a40153562cf721203c description Description: MOSFET N-CH 55V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
на замовлення 90789 шт:
термін постачання 21-31 дні (днів)
5+72.89 грн
10+43.78 грн
50+32.24 грн
100+26.78 грн
500+20.63 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
IRFR3910TRPBF IRFR3910TRPBF Infineon Technologies irfr3910pbf.pdf?fileId=5546d462533600a401535631f05d20df Description: MOSFET N-CH 100V 16A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 447 шт:
термін постачання 21-31 дні (днів)
4+95.63 грн
10+58.27 грн
50+43.35 грн
100+36.15 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRF7821TRPBF IRF7821TRPBF Infineon Technologies irf7821pbf.pdf?fileId=5546d462533600a401535608d7f31d06 Description: MOSFET N-CH 30V 13.6A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
IRLR120NTRPBF IRLR120NTRPBF Infineon Technologies irlr120npbf.pdf?fileId=5546d462533600a40153566965182665 description Description: MOSFET N-CH 100V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
на замовлення 16088 шт:
термін постачання 21-31 дні (днів)
4+81.52 грн
10+49.06 грн
50+36.26 грн
100+30.15 грн
500+23.34 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRLR024NTRPBF IRLR024NTRPBF Infineon Technologies infineon-irlr024n-datasheet-en.pdf description Description: MOSFET N-CH 55V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
на замовлення 51010 шт:
термін постачання 21-31 дні (днів)
5+68.98 грн
10+41.66 грн
50+30.66 грн
100+25.44 грн
500+19.56 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
IRFR5305TRPBF IRFR5305TRPBF Infineon Technologies infineon-irfr5305-datasheet-en.pdf description Description: MOSFET P-CH 55V 31A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
на замовлення 37507 шт:
термін постачання 21-31 дні (днів)
3+105.03 грн
10+63.55 грн
50+47.42 грн
100+39.59 грн
500+30.97 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRF7343TRPBF IRF7343TRPBF Infineon Technologies infineon-irf7343-datasheet-en.pdf description Description: MOSFET N/P-CH 55V 4.7A/3.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 50772 шт:
термін постачання 21-31 дні (днів)
3+112.09 грн
10+68.08 грн
50+50.77 грн
100+42.39 грн
500+33.18 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRF8113TRPBF IRF8113TRPBF Infineon Technologies irf8113pbf.pdf?fileId=5546d462533600a40153560ceb611d50 description Description: MOSFET N-CH 30V 17.2A 8SO
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V
товару немає в наявності
В кошику  од. на суму  грн.
IRF7342TRPBF IRF7342TRPBF Infineon Technologies irf7342pbf.pdf?fileId=5546d462533600a4015355f665771b69 Description: MOSFET 2P-CH 55V 3.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 61157 шт:
термін постачання 21-31 дні (днів)
3+116.00 грн
10+70.65 грн
50+52.85 грн
100+44.21 грн
500+34.75 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRLR3410TRPBF IRLR3410TRPBF Infineon Technologies irlr3410pbf.pdf?fileId=5546d462533600a40153566d14c52695 description Description: MOSFET N-CH 100V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
4+90.92 грн
10+55.33 грн
50+41.05 грн
100+34.20 грн
500+26.60 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRF7321D2TRPBF IRF7321D2TRPBF Infineon Technologies IRF7321D2PBF.pdf Description: MOSFET P-CH 30V 4.7A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
SI4435DYTRPBF SI4435DYTRPBF Infineon Technologies si4435dypbf.pdf?fileId=5546d462533600a4015356847c882983 description Description: MOSFET P-CH 30V 8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 15 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
4+90.14 грн
10+54.87 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRF7341TRPBF IRF7341TRPBF Infineon Technologies infineon-irf7341-datasheet-en.pdf?fileId=5546d462533600a4015355f64f031b63 description Description: MOSFET 2N-CH 55V 4.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 22673 шт:
термін постачання 21-31 дні (днів)
4+83.87 грн
10+50.57 грн
50+37.42 грн
100+31.14 грн
500+24.13 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRF7831TRPBF IRF7831TRPBF Infineon Technologies irf7831pbf.pdf?fileId=5546d462533600a401535608fe711d10 description Description: MOSFET N-CH 30V 21A 8SO
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLR7843TRPBF IRLR7843TRPBF Infineon Technologies infineon-irlr7843-datasheet-en.pdf Description: MOSFET N-CH 30V 161A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 161A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V
на замовлення 15442 шт:
термін постачання 21-31 дні (днів)
3+139.52 грн
10+85.67 грн
50+64.55 грн
100+54.17 грн
500+42.92 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRF7832TRPBF IRF7832TRPBF Infineon Technologies irf7832pbf.pdf?fileId=5546d462533600a40153560917241d16 description Description: MOSFET N-CH 30V 20A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.32V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 15 V
на замовлення 31929 шт:
термін постачання 21-31 дні (днів)
3+123.84 грн
10+75.78 грн
50+56.82 грн
100+47.59 грн
500+37.52 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRF7103TRPBF IRF7103TRPBF Infineon Technologies infineon-irf7103-datasheet-en.pdf description Description: MOSFET 2N-CH 50V 3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 12206 шт:
термін постачання 21-31 дні (днів)
5+74.46 грн
10+44.76 грн
50+33.03 грн
100+27.43 грн
500+21.15 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
IRLL2705TRPBF IRLL2705TRPBF Infineon Technologies irll2705pbf.pdf?fileId=5546d462533600a401535664653425db Description: MOSFET N-CH 55V 3.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
на замовлення 75855 шт:
термін постачання 21-31 дні (днів)
4+94.06 грн
10+56.61 грн
50+42.03 грн
100+34.99 грн
500+27.18 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRF7842TRPBF IRF7842TRPBF Infineon Technologies irf7842pbf.pdf?fileId=5546d462533600a40153560c44c41d25 description Description: MOSFET N-CH 40V 18A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 20 V
на замовлення 4645 шт:
термін постачання 21-31 дні (днів)
3+147.36 грн
10+90.50 грн
50+68.31 грн
100+57.38 грн
500+45.58 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRF7105TRPBF IRF7105TRPBF Infineon Technologies infineon-irf7105-datasheet-en.pdf description Description: MOSFET N/P-CH 25V 3.5A/2.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 15824 шт:
термін постачання 21-31 дні (днів)
5+65.84 грн
10+39.40 грн
50+28.97 грн
100+24.02 грн
500+18.43 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
IRF7452TRPBF IRF7452TRPBF Infineon Technologies irf7452pbf.pdf?fileId=5546d462533600a4015355fb43911be6 Description: MOSFET N-CH 100V 4.5A 8SO
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 5.5V @ 250µA
товару немає в наявності
В кошику  од. на суму  грн.
IRF7205TRPBF IRF7205TRPBF Infineon Technologies irf7205pbf.pdf?fileId=5546d462533600a4015355f15e771ae2 description Description: MOSFET P-CH 30V 4.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
на замовлення 61077 шт:
термін постачання 21-31 дні (днів)
5+73.68 грн
10+44.46 грн
50+32.83 грн
100+27.26 грн
500+21.02 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
IRF7309TRPBF IRF7309TRPBF Infineon Technologies infineon-irf7309-datasheet-en.pdf description Description: MOSFET N/P-CH 30V 4A/3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 33242 шт:
термін постачання 21-31 дні (днів)
4+81.52 грн
10+48.99 грн
50+36.21 грн
100+30.12 грн
500+23.31 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRF7306TRPBF IRF7306TRPBF Infineon Technologies irf7306pbf.pdf?fileId=5546d462533600a4015355f1fc421b0a description Description: MOSFET 2P-CH 30V 3.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 10060 шт:
термін постачання 21-31 дні (днів)
4+95.63 грн
10+58.19 грн
50+43.31 грн
100+36.12 грн
500+28.15 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRF7303TRPBF IRF7303TRPBF Infineon Technologies irf7303pbf.pdf?fileId=5546d462533600a4015355f1c70a1afc Description: MOSFET 2N-CH 30V 4.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
IRLR8103VTRPBF IRLR8103VTRPBF Infineon Technologies irlr8103vpbf.pdf?fileId=5546d462533600a40153566df59526dd Description: MOSFET N-CH 30V 91A DPAK
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 115W (Tc)
товару немає в наявності
В кошику  од. на суму  грн.
IRF7329TRPBF IRF7329TRPBF Infineon Technologies irf7329pbf.pdf?fileId=5546d462533600a4015355f617841b55 Description: MOSFET 2P-CH 12V 9.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9.2A
Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 12155 шт:
термін постачання 21-31 дні (днів)
3+112.09 грн
10+68.08 грн
100+45.50 грн
500+33.62 грн
1000+30.70 грн
2000+30.08 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRF7313TRPBF IRF7313TRPBF Infineon Technologies irf7313pbf.pdf?fileId=5546d462533600a4015355f560f81b26 description Description: MOSFET 2N-CH 30V 6.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 24730 шт:
термін постачання 21-31 дні (днів)
4+79.17 грн
10+47.55 грн
50+35.16 грн
100+29.22 грн
500+22.59 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRLR2905TRPBF IRLR2905TRPBF Infineon Technologies irlr2905pbf.pdf?fileId=5546d462533600a40153566cc2bb2679 description Description: MOSFET N-CH 55V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товару немає в наявності
В кошику  од. на суму  грн.
IRF7316TRPBF IRF7316TRPBF Infineon Technologies irf7316pbf.pdf?fileId=5546d462533600a4015355f5994e1b34 description Description: MOSFET 2P-CH 30V 4.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 17859 шт:
термін постачання 21-31 дні (днів)
3+129.33 грн
10+79.10 грн
100+52.71 грн
500+38.84 грн
1000+35.42 грн
2000+32.54 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRF7314TRPBF IRF7314TRPBF Infineon Technologies irf7314pbf.pdf?fileId=5546d462533600a4015355f57b901b2c description Description: MOSFET 2P-CH 20V 5.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Not For New Designs
товару немає в наявності
В кошику  од. на суму  грн.
IRF7317TRPBF IRF7317TRPBF Infineon Technologies irf7317pbf.pdf?fileId=5546d462533600a4015355f5b8de1b3d description Description: MOSFET N/P-CH 20V 6.6A/5.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Not For New Designs
товару немає в наявності
В кошику  од. на суму  грн.
IRFL1006PBF description IRFL1006PbF.pdf
IRFL1006PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 1.6A SOT223
товару немає в наявності
В кошику  од. на суму  грн.
IRFL024ZPBF description irfl024zpbf.pdf?fileId=5546d462533600a401535627dcd91fb2
IRFL024ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 5.1A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 57.5mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLL2703PBF IRSDS06555-1.pdf?t.download=true&u=5oefqw
IRLL2703PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 3.9A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFL4105PBF description irfl4105pbf.pdf?fileId=5546d462533600a401535627f48c1fb8
IRFL4105PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 3.7A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
IRU1010-33CSPBF iru1010-33.pdf
IRU1010-33CSPBF
Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V 1A 8SOIC
товару немає в наявності
В кошику  од. на суму  грн.
IRF7807APBF IR_PartNumberingSystem.pdf
IRF7807APBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 8.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF3000PBF irf3000pbf.pdf
IRF3000PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 300V 1.6A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 960mA, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 95 шт
В кошику  од. на суму  грн.
IRU3037ACSPBF IRU3037%28A%20%2CPbF%29.pdf
IRU3037ACSPBF
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK/BOOST 8SOIC
Number of Outputs: 1
Part Status: Obsolete
Clock Sync: No
Duty Cycle (Max): 90%
Output Phases: 1
Control Features: Enable, Soft Start
Synchronous Rectifier: Yes
Supplier Device Package: 8-SOIC
Topology: Buck, Boost
Frequency - Switching: 400kHz
Output Configuration: Positive
Operating Temperature: 0°C ~ 70°C (TA)
Function: Step-Up, Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Voltage - Supply (Vcc/Vdd): 4.2V ~ 25V
товару немає в наявності
Мінімальне замовлення: 380 шт
В кошику  од. на суму  грн.
IRF7467PBF IRF7467PBF.pdf
IRF7467PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 11A 8SO
товару немає в наявності
Мінімальне замовлення: 4085 шт
В кошику  од. на суму  грн.
IRF7324PBF irf7324pbf.pdf?fileId=5546d462533600a4015355f5f0861b4b
IRF7324PBF
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 20V 9A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 15V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
товару немає в наявності
В кошику  од. на суму  грн.
IR2172SPBF ir2171.pdf
IR2172SPBF
Виробник: Infineon Technologies
Description: IC CURRENT SENSE 8SOIC
Supplier Device Package: 8-SOIC
Operating Temperature: -40°C ~ 125°C
Current - Output: 20mA
Voltage - Input: 9.5V ~ 20V
Function: Current Sense
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
IR2302SPBF ir2302.pdf?fileId=5546d462533600a4015355c988b216de
IR2302SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Not For New Designs
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 130ns, 50ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
на замовлення 2929 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+164.60 грн
10+117.90 грн
95+96.68 грн
190+86.73 грн
285+84.73 грн
570+81.80 грн
1045+78.35 грн
2565+75.83 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRLML5103TRPBF infineon-irlml5103-datasheet-en.pdf
IRLML5103TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 760MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
на замовлення 109284 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
10+31.35 грн
17+18.64 грн
50+13.47 грн
100+11.05 грн
500+8.25 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
IRLML2803TRPBF infineon-irlml2803-datasheet-en.pdf
IRLML2803TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 1.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 910mA, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
на замовлення 63000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
12+28.22 грн
19+16.38 грн
50+11.80 грн
100+9.67 грн
500+7.19 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
IRLML6402TRPBF irlml6402pbf-1.pdf
IRLML6402TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 3.7A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLML2502TRPBF infineon-irlml2502-datasheet-en.pdf
IRLML2502TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 4.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLML2402TRPBF irlml2402pbf.pdf?fileId=5546d462533600a401535664e5ef25fa
IRLML2402TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 1.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 930mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: Micro3™/SOT-23
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLML6401TRPBF irlml6401pbf-1.pdf
IRLML6401TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 12V 4.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.3A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLML6302TRPBF irlml6302pbf.pdf?fileId=5546d462533600a4015356688c702627
IRLML6302TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 780MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 780mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 610mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.45 V
Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLMS6802TRPBF irlms6802pbf.pdf?fileId=5546d462533600a401535669349a2654
IRLMS6802TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 5.6A MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1079 pF @ 10 V
на замовлення 412 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
6+54.08 грн
10+32.08 грн
100+20.67 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
IRLMS2002TRPBF description irlms2002pbf.pdf?fileId=5546d462533600a4015356690f42264a
IRLMS2002TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 6.5A MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro6™(SOT23-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
на замовлення 1993 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
6+61.92 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
IRLMS1503TRPBF description irlms1503pbf.pdf?fileId=5546d462533600a401535668f6282644
IRLMS1503TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 3.2A MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 25 V
на замовлення 107 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
7+45.46 грн
12+26.79 грн
100+17.17 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
IRLL014NTRPBF description irll014npbf.pdf?fileId=5546d462533600a401535664368425cf
IRLL014NTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 2A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
на замовлення 3611 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
6+58.00 грн
10+34.95 грн
50+25.59 грн
100+21.17 грн
500+16.16 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
IRLMS5703TRPBF irlms5703pbf.pdf?fileId=5546d462533600a401535669171c264c
IRLMS5703TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 2.4A MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLMS6702TRPBF irlms6702pbf.pdf?fileId=5546d462533600a40153566923282650
IRLMS6702TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 2.4A MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFR3709ZTRPBF irfr3709zpbf.pdf?fileId=5546d462533600a401535631a47a20c5
IRFR3709ZTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 86A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFR9024NTRPBF description irfr9024npbf.pdf?fileId=5546d462533600a401535635f91d2132
IRFR9024NTRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 56901 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+101.90 грн
10+61.82 грн
50+46.10 грн
100+38.48 грн
500+30.07 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRFR9120NTRPBF description irfr9120npbf.pdf?fileId=5546d462533600a40153563607932138
IRFR9120NTRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 6.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 3.9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 1308 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+98.76 грн
10+59.93 грн
50+44.59 грн
100+37.20 грн
500+29.03 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRFR024NTRPBF description irfr024npbf.pdf?fileId=5546d462533600a40153562cf721203c
IRFR024NTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
на замовлення 90789 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5+72.89 грн
10+43.78 грн
50+32.24 грн
100+26.78 грн
500+20.63 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
IRFR3910TRPBF irfr3910pbf.pdf?fileId=5546d462533600a401535631f05d20df
IRFR3910TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 16A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 447 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+95.63 грн
10+58.27 грн
50+43.35 грн
100+36.15 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRF7821TRPBF irf7821pbf.pdf?fileId=5546d462533600a401535608d7f31d06
IRF7821TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13.6A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
IRLR120NTRPBF description irlr120npbf.pdf?fileId=5546d462533600a40153566965182665
IRLR120NTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
на замовлення 16088 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+81.52 грн
10+49.06 грн
50+36.26 грн
100+30.15 грн
500+23.34 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRLR024NTRPBF description infineon-irlr024n-datasheet-en.pdf
IRLR024NTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
на замовлення 51010 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5+68.98 грн
10+41.66 грн
50+30.66 грн
100+25.44 грн
500+19.56 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
IRFR5305TRPBF description infineon-irfr5305-datasheet-en.pdf
IRFR5305TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 31A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
на замовлення 37507 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+105.03 грн
10+63.55 грн
50+47.42 грн
100+39.59 грн
500+30.97 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRF7343TRPBF description infineon-irf7343-datasheet-en.pdf
IRF7343TRPBF
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 55V 4.7A/3.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 50772 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+112.09 грн
10+68.08 грн
50+50.77 грн
100+42.39 грн
500+33.18 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRF8113TRPBF description irf8113pbf.pdf?fileId=5546d462533600a40153560ceb611d50
IRF8113TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 17.2A 8SO
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V
товару немає в наявності
В кошику  од. на суму  грн.
IRF7342TRPBF irf7342pbf.pdf?fileId=5546d462533600a4015355f665771b69
IRF7342TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 55V 3.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 61157 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+116.00 грн
10+70.65 грн
50+52.85 грн
100+44.21 грн
500+34.75 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRLR3410TRPBF description irlr3410pbf.pdf?fileId=5546d462533600a40153566d14c52695
IRLR3410TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+90.92 грн
10+55.33 грн
50+41.05 грн
100+34.20 грн
500+26.60 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRF7321D2TRPBF IRF7321D2PBF.pdf
IRF7321D2TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 4.7A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
SI4435DYTRPBF description si4435dypbf.pdf?fileId=5546d462533600a4015356847c882983
SI4435DYTRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 15 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+90.14 грн
10+54.87 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRF7341TRPBF description infineon-irf7341-datasheet-en.pdf?fileId=5546d462533600a4015355f64f031b63
IRF7341TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 55V 4.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 22673 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+83.87 грн
10+50.57 грн
50+37.42 грн
100+31.14 грн
500+24.13 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRF7831TRPBF description irf7831pbf.pdf?fileId=5546d462533600a401535608fe711d10
IRF7831TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 21A 8SO
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLR7843TRPBF infineon-irlr7843-datasheet-en.pdf
IRLR7843TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 161A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 161A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V
на замовлення 15442 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+139.52 грн
10+85.67 грн
50+64.55 грн
100+54.17 грн
500+42.92 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRF7832TRPBF description irf7832pbf.pdf?fileId=5546d462533600a40153560917241d16
IRF7832TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 20A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.32V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 15 V
на замовлення 31929 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+123.84 грн
10+75.78 грн
50+56.82 грн
100+47.59 грн
500+37.52 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRF7103TRPBF description infineon-irf7103-datasheet-en.pdf
IRF7103TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 50V 3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 12206 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5+74.46 грн
10+44.76 грн
50+33.03 грн
100+27.43 грн
500+21.15 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
IRLL2705TRPBF irll2705pbf.pdf?fileId=5546d462533600a401535664653425db
IRLL2705TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 3.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
на замовлення 75855 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+94.06 грн
10+56.61 грн
50+42.03 грн
100+34.99 грн
500+27.18 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRF7842TRPBF description irf7842pbf.pdf?fileId=5546d462533600a40153560c44c41d25
IRF7842TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 18A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 20 V
на замовлення 4645 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+147.36 грн
10+90.50 грн
50+68.31 грн
100+57.38 грн
500+45.58 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRF7105TRPBF description infineon-irf7105-datasheet-en.pdf
IRF7105TRPBF
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 25V 3.5A/2.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 15824 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5+65.84 грн
10+39.40 грн
50+28.97 грн
100+24.02 грн
500+18.43 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
IRF7452TRPBF irf7452pbf.pdf?fileId=5546d462533600a4015355fb43911be6
IRF7452TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 4.5A 8SO
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 5.5V @ 250µA
товару немає в наявності
В кошику  од. на суму  грн.
IRF7205TRPBF description irf7205pbf.pdf?fileId=5546d462533600a4015355f15e771ae2
IRF7205TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 4.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
на замовлення 61077 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5+73.68 грн
10+44.46 грн
50+32.83 грн
100+27.26 грн
500+21.02 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
IRF7309TRPBF description infineon-irf7309-datasheet-en.pdf
IRF7309TRPBF
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 33242 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+81.52 грн
10+48.99 грн
50+36.21 грн
100+30.12 грн
500+23.31 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRF7306TRPBF description irf7306pbf.pdf?fileId=5546d462533600a4015355f1fc421b0a
IRF7306TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 30V 3.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 10060 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+95.63 грн
10+58.19 грн
50+43.31 грн
100+36.12 грн
500+28.15 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRF7303TRPBF irf7303pbf.pdf?fileId=5546d462533600a4015355f1c70a1afc
IRF7303TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 4.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
IRLR8103VTRPBF irlr8103vpbf.pdf?fileId=5546d462533600a40153566df59526dd
IRLR8103VTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 91A DPAK
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 115W (Tc)
товару немає в наявності
В кошику  од. на суму  грн.
IRF7329TRPBF irf7329pbf.pdf?fileId=5546d462533600a4015355f617841b55
IRF7329TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 12V 9.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9.2A
Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 12155 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+112.09 грн
10+68.08 грн
100+45.50 грн
500+33.62 грн
1000+30.70 грн
2000+30.08 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRF7313TRPBF description irf7313pbf.pdf?fileId=5546d462533600a4015355f560f81b26
IRF7313TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 6.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 24730 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+79.17 грн
10+47.55 грн
50+35.16 грн
100+29.22 грн
500+22.59 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRLR2905TRPBF description irlr2905pbf.pdf?fileId=5546d462533600a40153566cc2bb2679
IRLR2905TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товару немає в наявності
В кошику  од. на суму  грн.
IRF7316TRPBF description irf7316pbf.pdf?fileId=5546d462533600a4015355f5994e1b34
IRF7316TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 30V 4.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 17859 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+129.33 грн
10+79.10 грн
100+52.71 грн
500+38.84 грн
1000+35.42 грн
2000+32.54 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRF7314TRPBF description irf7314pbf.pdf?fileId=5546d462533600a4015355f57b901b2c
IRF7314TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 20V 5.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Not For New Designs
товару немає в наявності
В кошику  од. на суму  грн.
IRF7317TRPBF description irf7317pbf.pdf?fileId=5546d462533600a4015355f5b8de1b3d
IRF7317TRPBF
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 20V 6.6A/5.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Not For New Designs
товару немає в наявності
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 38 39 40 41 42 43 44 45 46 47 48 210 420 630 840 1050 1260 1470 1680 1890 2100 2109  [ Наступна Сторінка >> ]