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IRFU9120NPBF IRFU9120NPBF Infineon Technologies irfr9120npbf.pdf?fileId=5546d462533600a40153563607932138 Description: MOSFET P-CH 100V 6.6A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK (TO-251AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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IRFU3708PBF IRFU3708PBF Infineon Technologies irfr3708pbf.pdf?fileId=5546d462533600a4015356318cc320be Description: MOSFET N-CH 30V 61A IPAK
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IRFU3706PBF IRFU3706PBF Infineon Technologies IRF(R,U)3706PbF.pdf Description: MOSFET N-CH 20V 75A IPAK
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IRFU3707PBF IRFU3707PBF Infineon Technologies IRFR(U)3707PbF.pdf Description: MOSFET N-CH 30V 61A IPAK
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IRLR4343PBF IRLR4343PBF Infineon Technologies IRL%28R%2CU%294343%28-701%29PbF.pdf Description: MOSFET N-CH 55V 26A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 50 V
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IRFU5410PBF IRFU5410PBF Infineon Technologies irfr5410pbf.pdf?fileId=5546d462533600a4015356356f622107 Description: MOSFET P-CH 100V 13A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: IPAK (TO-251AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 66W (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
на замовлення 2310 шт:
термін постачання 21-31 дні (днів)
3+127.08 грн
75+54.95 грн
150+49.34 грн
525+38.79 грн
1050+35.54 грн
2025+32.94 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRFU5505PBF IRFU5505PBF Infineon Technologies irfr5505pbf.pdf?fileId=5546d462533600a4015356358535210f Description: MOSFET P-CH 55V 18A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK (TO-251AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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64-4092PBF 64-4092PBF Infineon Technologies irlr2705pbf.pdf?fileId=5546d462533600a40153566cb38f2673 Description: MOSFET N-CH 55V 28A I-PAK
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
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IRFR3708PBF IRFR3708PBF Infineon Technologies irfr3708pbf.pdf?fileId=5546d462533600a4015356318cc320be Description: MOSFET N-CH 30V 61A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 15A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2417 pF @ 15 V
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IRLU3410PBF IRLU3410PBF Infineon Technologies irlr3410pbf.pdf?fileId=5546d462533600a40153566d14c52695 Description: MOSFET N-CH 100V 17A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
на замовлення 5549 шт:
термін постачання 21-31 дні (днів)
3+114.69 грн
75+48.98 грн
150+43.84 грн
525+34.27 грн
1050+31.29 грн
2025+28.91 грн
5025+25.77 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRFU2405PBF IRFU2405PBF Infineon Technologies irfr2405pbf.pdf?fileId=5546d462533600a40153562da91b2079 description Description: MOSFET N-CH 55V 56A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 34A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 25 V
товару немає в наявності
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IRFU13N20DPBF IRFU13N20DPBF Infineon Technologies irfr13n20dpbf.pdf?fileId=5546d462533600a40153562d59d9205f Description: MOSFET N-CH 200V 13A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
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IRLU3303PBF IRLU3303PBF Infineon Technologies IRLR,U3303PbF.pdf Description: MOSFET N-CH 30V 35A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 21A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
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IRFR2307ZPBF IRFR2307ZPBF Infineon Technologies irfr2307zpbf.pdf?fileId=5546d462533600a40153562d98be2074 description Description: MOSFET N-CH 75V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 32A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
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IRFU5305PBF IRFU5305PBF Infineon Technologies irfr5305pbf.pdf?fileId=5546d462533600a401535632522820ff description Description: MOSFET P-CH 55V 31A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
на замовлення 9002 шт:
термін постачання 21-31 дні (днів)
4+89.89 грн
75+37.86 грн
150+33.75 грн
525+26.18 грн
1050+23.79 грн
2025+21.89 грн
5025+19.39 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRLR2905ZPBF IRLR2905ZPBF Infineon Technologies irlr2905zpbf.pdf?fileId=5546d462533600a40153566ccc09267c description Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
товару немає в наявності
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IRFU3910PBF IRFU3910PBF Infineon Technologies irfr3910pbf.pdf?fileId=5546d462533600a401535631f05d20df description Description: MOSFET N-CH 100V 16A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
на замовлення 2969 шт:
термін постачання 21-31 дні (днів)
3+105.39 грн
75+45.05 грн
150+40.33 грн
525+31.52 грн
1050+28.78 грн
2025+26.59 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRFR3710ZPBF IRFR3710ZPBF Infineon Technologies irfr3710zpbf.pdf?fileId=5546d462533600a401535631b29d20cb Description: MOSFET N-CH 100V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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IRFR12N25DPBF IRFR12N25DPBF Infineon Technologies IRF%28R%2CU%2912N25DPbF.pdf description Description: MOSFET N-CH 250V 14A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8.4A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
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IRFU3710ZPBF IRFU3710ZPBF Infineon Technologies irfu3709pbf.pdf Description: MOSFET N-CH 100V 42A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 25 V
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IRLR3705ZPBF IRLR3705ZPBF Infineon Technologies irlr3705zpbf.pdf?fileId=5546d462533600a40153566d2d17269d Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 42A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
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IRG4RC10KPBF IRG4RC10KPBF Infineon Technologies IRG4RC10KPbF.pdf Description: IGBT 600V 9A 38W DPAK
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IRFU4105PBF IRFU4105PBF Infineon Technologies irfr4105pbf.pdf?fileId=5546d462533600a401535632110f20e9 Description: MOSFET N-CH 55V 27A IPAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK (TO-251AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
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IRLU2905PBF IRLU2905PBF Infineon Technologies irlr2905pbf.pdf?fileId=5546d462533600a40153566cc2bb2679 description Description: MOSFET N-CH 55V 42A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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IRFL1006PBF IRFL1006PBF Infineon Technologies IRFL1006PbF.pdf description Description: MOSFET N-CH 60V 1.6A SOT223
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IRFL024ZPBF IRFL024ZPBF Infineon Technologies irfl024zpbf.pdf?fileId=5546d462533600a401535627dcd91fb2 description Description: MOSFET N-CH 55V 5.1A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 57.5mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
товару немає в наявності
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IRLL2703PBF IRLL2703PBF Infineon Technologies IRSDS06555-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 30V 3.9A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
товару немає в наявності
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IRFL4105PBF IRFL4105PBF Infineon Technologies irfl4105pbf.pdf?fileId=5546d462533600a401535627f48c1fb8 description Description: MOSFET N-CH 55V 3.7A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tube
товару немає в наявності
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IRU1010-33CSPBF IRU1010-33CSPBF Infineon Technologies iru1010-33.pdf Description: IC REG LINEAR 3.3V 1A 8SOIC
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IRF7807APBF IRF7807APBF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH 30V 8.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
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IRF3000PBF IRF3000PBF Infineon Technologies irf3000pbf.pdf Description: MOSFET N-CH 300V 1.6A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 960mA, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 95 шт
В кошику  од. на суму  грн.
IRU3037ACSPBF IRU3037ACSPBF Infineon Technologies IRU3037%28A%20%2CPbF%29.pdf Description: IC REG CTRLR BUCK/BOOST 8SOIC
Number of Outputs: 1
Part Status: Obsolete
Clock Sync: No
Duty Cycle (Max): 90%
Output Phases: 1
Control Features: Enable, Soft Start
Synchronous Rectifier: Yes
Supplier Device Package: 8-SOIC
Topology: Buck, Boost
Frequency - Switching: 400kHz
Output Configuration: Positive
Operating Temperature: 0°C ~ 70°C (TA)
Function: Step-Up, Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Voltage - Supply (Vcc/Vdd): 4.2V ~ 25V
товару немає в наявності
 Мінімальне замовлення: 380 шт
В кошику  од. на суму  грн.
IRF7467PBF IRF7467PBF Infineon Technologies IRF7467PBF.pdf Description: MOSFET N-CH 30V 11A 8SO
товару немає в наявності
 Мінімальне замовлення: 4085 шт
В кошику  од. на суму  грн.
IRF7324PBF IRF7324PBF Infineon Technologies irf7324pbf.pdf?fileId=5546d462533600a4015355f5f0861b4b Description: MOSFET 2P-CH 20V 9A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 15V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
товару немає в наявності
В кошику  од. на суму  грн.
IR2172SPBF IR2172SPBF Infineon Technologies ir2171.pdf Description: IC CURRENT SENSE 8SOIC
Supplier Device Package: 8-SOIC
Operating Temperature: -40°C ~ 125°C
Current - Output: 20mA
Voltage - Input: 9.5V ~ 20V
Function: Current Sense
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
товару немає в наявності
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IR2302SPBF IR2302SPBF Infineon Technologies ir2302.pdf?fileId=5546d462533600a4015355c988b216de Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Not For New Designs
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 130ns, 50ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
на замовлення 2929 шт:
термін постачання 21-31 дні (днів)
2+162.73 грн
10+116.56 грн
95+95.58 грн
190+85.75 грн
285+83.77 грн
570+80.87 грн
1045+77.46 грн
2565+74.96 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRLML5103TRPBF IRLML5103TRPBF Infineon Technologies infineon-irlml5103-datasheet-en.pdf Description: MOSFET P-CH 30V 760MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
на замовлення 130377 шт:
термін постачання 21-31 дні (днів)
9+37.20 грн
14+21.86 грн
100+13.80 грн
500+9.68 грн
1000+8.62 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
IRLML2803TRPBF IRLML2803TRPBF Infineon Technologies infineon-irlml2803-datasheet-en.pdf Description: MOSFET N-CH 30V 1.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 910mA, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
на замовлення 367293 шт:
термін постачання 21-31 дні (днів)
10+33.32 грн
16+19.40 грн
100+12.22 грн
500+8.54 грн
1000+7.59 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
IRLML6402TRPBF IRLML6402TRPBF Infineon Technologies irlml6402pbf-1.pdf Description: MOSFET P-CH 20V 3.7A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLML2502TRPBF IRLML2502TRPBF Infineon Technologies infineon-irlml2502-datasheet-en.pdf Description: MOSFET N-CH 20V 4.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 15 V
на замовлення 2482 шт:
термін постачання 21-31 дні (днів)
9+37.97 грн
14+22.61 грн
100+14.36 грн
500+10.13 грн
1000+9.05 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
IRLML2402TRPBF IRLML2402TRPBF Infineon Technologies irlml2402pbf.pdf?fileId=5546d462533600a401535664e5ef25fa Description: MOSFET N-CH 20V 1.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 930mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: Micro3™/SOT-23
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 15 V
товару немає в наявності
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IRLML6401TRPBF IRLML6401TRPBF Infineon Technologies irlml6401pbf-1.pdf Description: MOSFET P-CH 12V 4.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.3A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLML6302TRPBF IRLML6302TRPBF Infineon Technologies irlml6302pbf.pdf?fileId=5546d462533600a4015356688c702627 Description: MOSFET P-CH 20V 780MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 780mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 610mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.45 V
Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLMS6802TRPBF IRLMS6802TRPBF Infineon Technologies irlms6802pbf.pdf?fileId=5546d462533600a401535669349a2654 Description: MOSFET P-CH 20V 5.6A MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1079 pF @ 10 V
на замовлення 412 шт:
термін постачання 21-31 дні (днів)
6+53.47 грн
10+31.71 грн
100+20.43 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
IRLMS2002TRPBF IRLMS2002TRPBF Infineon Technologies irlms2002pbf.pdf?fileId=5546d462533600a4015356690f42264a description Description: MOSFET N-CH 20V 6.5A MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro6™(SOT23-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
на замовлення 1993 шт:
термін постачання 21-31 дні (днів)
6+61.22 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
IRLMS1503TRPBF IRLMS1503TRPBF Infineon Technologies irlms1503pbf.pdf?fileId=5546d462533600a401535668f6282644 description Description: MOSFET N-CH 30V 3.2A MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 25 V
на замовлення 107 шт:
термін постачання 21-31 дні (днів)
7+44.94 грн
12+26.49 грн
100+16.98 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
IRLL014NTRPBF IRLL014NTRPBF Infineon Technologies irll014npbf.pdf?fileId=5546d462533600a401535664368425cf description Description: MOSFET N-CH 55V 2A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
на замовлення 30489 шт:
термін постачання 21-31 дні (днів)
5+68.19 грн
10+40.82 грн
100+26.37 грн
500+18.92 грн
1000+17.04 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
IRLMS5703TRPBF IRLMS5703TRPBF Infineon Technologies irlms5703pbf.pdf?fileId=5546d462533600a401535669171c264c Description: MOSFET P-CH 30V 2.4A MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLMS6702TRPBF IRLMS6702TRPBF Infineon Technologies irlms6702pbf.pdf?fileId=5546d462533600a40153566923282650 Description: MOSFET P-CH 20V 2.4A MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFR3709ZTRPBF IRFR3709ZTRPBF Infineon Technologies irfr3709zpbf.pdf?fileId=5546d462533600a401535631a47a20c5 Description: MOSFET N-CH 30V 86A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF7201TRPBF IRF7201TRPBF Infineon Technologies infineon-irf7201-datasheet-en.pdf?fileId=5546d462533600a4015355f13efb1ada description Description: MOSFET N-CH 30V 7.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.3A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFR9024NTRPBF IRFR9024NTRPBF Infineon Technologies irfr9024npbf.pdf?fileId=5546d462533600a401535635f91d2132 description Description: MOSFET P-CH 55V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 58231 шт:
термін постачання 21-31 дні (днів)
4+101.51 грн
10+61.26 грн
100+40.64 грн
500+29.80 грн
1000+27.12 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRFR9120NTRPBF IRFR9120NTRPBF Infineon Technologies irfr9120npbf.pdf?fileId=5546d462533600a40153563607932138 description Description: MOSFET P-CH 100V 6.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 3.9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 3680 шт:
термін постачання 21-31 дні (днів)
3+112.36 грн
10+68.05 грн
100+45.35 грн
500+33.40 грн
1000+30.46 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRFR024NTRPBF IRFR024NTRPBF Infineon Technologies irfr024npbf.pdf?fileId=5546d462533600a40153562cf721203c description Description: MOSFET N-CH 55V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
на замовлення 94718 шт:
термін постачання 21-31 дні (днів)
4+91.44 грн
10+55.37 грн
100+36.50 грн
500+26.65 грн
1000+24.21 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRFR3910TRPBF IRFR3910TRPBF Infineon Technologies irfr3910pbf.pdf?fileId=5546d462533600a401535631f05d20df Description: MOSFET N-CH 100V 16A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 19054 шт:
термін постачання 21-31 дні (днів)
3+114.69 грн
10+69.99 грн
100+46.79 грн
500+34.55 грн
1000+31.54 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRF7821TRPBF IRF7821TRPBF Infineon Technologies irf7821pbf.pdf?fileId=5546d462533600a401535608d7f31d06 Description: MOSFET N-CH 30V 13.6A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 2381 шт:
термін постачання 21-31 дні (днів)
3+106.16 грн
10+64.92 грн
100+43.31 грн
500+31.97 грн
1000+29.17 грн
2000+26.83 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRLR120NTRPBF IRLR120NTRPBF Infineon Technologies irlr120npbf.pdf?fileId=5546d462533600a40153566965182665 description Description: MOSFET N-CH 100V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
на замовлення 11884 шт:
термін постачання 21-31 дні (днів)
4+96.09 грн
10+58.20 грн
100+38.47 грн
500+28.16 грн
1000+25.60 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRLR024NTRPBF IRLR024NTRPBF Infineon Technologies infineon-irlr024n-datasheet-en.pdf description Description: MOSFET N-CH 55V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
на замовлення 41463 шт:
термін постачання 21-31 дні (днів)
5+67.42 грн
10+40.52 грн
100+26.35 грн
500+19.00 грн
1000+17.16 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
IRFR5305TRPBF IRFR5305TRPBF Infineon Technologies infineon-irfr5305-datasheet-en.pdf description Description: MOSFET P-CH 55V 31A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
на замовлення 49580 шт:
термін постачання 21-31 дні (днів)
4+102.29 грн
10+62.16 грн
100+41.21 грн
500+30.24 грн
1000+27.53 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRF7343TRPBF IRF7343TRPBF Infineon Technologies infineon-irf7343-datasheet-en.pdf description Description: MOSFET N/P-CH 55V 4.7A/3.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 66388 шт:
термін постачання 21-31 дні (днів)
4+101.51 грн
10+61.94 грн
100+41.06 грн
500+30.12 грн
1000+27.42 грн
2000+25.14 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRFU9120NPBF irfr9120npbf.pdf?fileId=5546d462533600a40153563607932138
IRFU9120NPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 6.6A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK (TO-251AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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IRFU3708PBF irfr3708pbf.pdf?fileId=5546d462533600a4015356318cc320be
IRFU3708PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 61A IPAK
товару немає в наявності
В кошику  од. на суму  грн.
IRFU3706PBF IRF(R,U)3706PbF.pdf
IRFU3706PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 75A IPAK
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IRFU3707PBF IRFR(U)3707PbF.pdf
IRFU3707PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 61A IPAK
товару немає в наявності
В кошику  од. на суму  грн.
IRLR4343PBF IRL%28R%2CU%294343%28-701%29PbF.pdf
IRLR4343PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 26A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFU5410PBF irfr5410pbf.pdf?fileId=5546d462533600a4015356356f622107
IRFU5410PBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 13A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: IPAK (TO-251AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 66W (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
на замовлення 2310 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+127.08 грн
75+54.95 грн
150+49.34 грн
525+38.79 грн
1050+35.54 грн
2025+32.94 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRFU5505PBF irfr5505pbf.pdf?fileId=5546d462533600a4015356358535210f
IRFU5505PBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 18A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK (TO-251AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
64-4092PBF irlr2705pbf.pdf?fileId=5546d462533600a40153566cb38f2673
64-4092PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 28A I-PAK
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
товару немає в наявності
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IRFR3708PBF irfr3708pbf.pdf?fileId=5546d462533600a4015356318cc320be
IRFR3708PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 61A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 15A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2417 pF @ 15 V
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IRLU3410PBF irlr3410pbf.pdf?fileId=5546d462533600a40153566d14c52695
IRLU3410PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
на замовлення 5549 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+114.69 грн
75+48.98 грн
150+43.84 грн
525+34.27 грн
1050+31.29 грн
2025+28.91 грн
5025+25.77 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRFU2405PBF description irfr2405pbf.pdf?fileId=5546d462533600a40153562da91b2079
IRFU2405PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 56A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 34A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 25 V
товару немає в наявності
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IRFU13N20DPBF irfr13n20dpbf.pdf?fileId=5546d462533600a40153562d59d9205f
IRFU13N20DPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 13A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
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IRLU3303PBF IRLR,U3303PbF.pdf
IRLU3303PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 35A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 21A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
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IRFR2307ZPBF description irfr2307zpbf.pdf?fileId=5546d462533600a40153562d98be2074
IRFR2307ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 32A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
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IRFU5305PBF description irfr5305pbf.pdf?fileId=5546d462533600a401535632522820ff
IRFU5305PBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 31A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
на замовлення 9002 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+89.89 грн
75+37.86 грн
150+33.75 грн
525+26.18 грн
1050+23.79 грн
2025+21.89 грн
5025+19.39 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRLR2905ZPBF description irlr2905zpbf.pdf?fileId=5546d462533600a40153566ccc09267c
IRLR2905ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
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IRFU3910PBF description irfr3910pbf.pdf?fileId=5546d462533600a401535631f05d20df
IRFU3910PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 16A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
на замовлення 2969 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+105.39 грн
75+45.05 грн
150+40.33 грн
525+31.52 грн
1050+28.78 грн
2025+26.59 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRFR3710ZPBF irfr3710zpbf.pdf?fileId=5546d462533600a401535631b29d20cb
IRFR3710ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IRFR12N25DPBF description IRF%28R%2CU%2912N25DPbF.pdf
IRFR12N25DPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 14A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8.4A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
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IRFU3710ZPBF irfu3709pbf.pdf
IRFU3710ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 42A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 25 V
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IRLR3705ZPBF irlr3705zpbf.pdf?fileId=5546d462533600a40153566d2d17269d
IRLR3705ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 42A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
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IRG4RC10KPBF IRG4RC10KPbF.pdf
IRG4RC10KPBF
Виробник: Infineon Technologies
Description: IGBT 600V 9A 38W DPAK
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IRFU4105PBF irfr4105pbf.pdf?fileId=5546d462533600a401535632110f20e9
IRFU4105PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 27A IPAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK (TO-251AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
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IRLU2905PBF description irlr2905pbf.pdf?fileId=5546d462533600a40153566cc2bb2679
IRLU2905PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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IRFL1006PBF description IRFL1006PbF.pdf
IRFL1006PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 1.6A SOT223
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IRFL024ZPBF description irfl024zpbf.pdf?fileId=5546d462533600a401535627dcd91fb2
IRFL024ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 5.1A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 57.5mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
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IRLL2703PBF IRSDS06555-1.pdf?t.download=true&u=5oefqw
IRLL2703PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 3.9A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
товару немає в наявності
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IRFL4105PBF description irfl4105pbf.pdf?fileId=5546d462533600a401535627f48c1fb8
IRFL4105PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 3.7A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tube
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IRU1010-33CSPBF iru1010-33.pdf
IRU1010-33CSPBF
Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V 1A 8SOIC
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IRF7807APBF IR_PartNumberingSystem.pdf
IRF7807APBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 8.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
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IRF3000PBF irf3000pbf.pdf
IRF3000PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 300V 1.6A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 960mA, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 95 шт
В кошику  од. на суму  грн.
IRU3037ACSPBF IRU3037%28A%20%2CPbF%29.pdf
IRU3037ACSPBF
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK/BOOST 8SOIC
Number of Outputs: 1
Part Status: Obsolete
Clock Sync: No
Duty Cycle (Max): 90%
Output Phases: 1
Control Features: Enable, Soft Start
Synchronous Rectifier: Yes
Supplier Device Package: 8-SOIC
Topology: Buck, Boost
Frequency - Switching: 400kHz
Output Configuration: Positive
Operating Temperature: 0°C ~ 70°C (TA)
Function: Step-Up, Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Voltage - Supply (Vcc/Vdd): 4.2V ~ 25V
товару немає в наявності
Мінімальне замовлення: 380 шт
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IRF7467PBF IRF7467PBF.pdf
IRF7467PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 11A 8SO
товару немає в наявності
Мінімальне замовлення: 4085 шт
В кошику  од. на суму  грн.
IRF7324PBF irf7324pbf.pdf?fileId=5546d462533600a4015355f5f0861b4b
IRF7324PBF
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 20V 9A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 15V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
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IR2172SPBF ir2171.pdf
IR2172SPBF
Виробник: Infineon Technologies
Description: IC CURRENT SENSE 8SOIC
Supplier Device Package: 8-SOIC
Operating Temperature: -40°C ~ 125°C
Current - Output: 20mA
Voltage - Input: 9.5V ~ 20V
Function: Current Sense
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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IR2302SPBF ir2302.pdf?fileId=5546d462533600a4015355c988b216de
IR2302SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Not For New Designs
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 130ns, 50ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
на замовлення 2929 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+162.73 грн
10+116.56 грн
95+95.58 грн
190+85.75 грн
285+83.77 грн
570+80.87 грн
1045+77.46 грн
2565+74.96 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRLML5103TRPBF infineon-irlml5103-datasheet-en.pdf
IRLML5103TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 760MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
на замовлення 130377 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
9+37.20 грн
14+21.86 грн
100+13.80 грн
500+9.68 грн
1000+8.62 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
IRLML2803TRPBF infineon-irlml2803-datasheet-en.pdf
IRLML2803TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 1.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 910mA, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
на замовлення 367293 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
10+33.32 грн
16+19.40 грн
100+12.22 грн
500+8.54 грн
1000+7.59 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
IRLML6402TRPBF irlml6402pbf-1.pdf
IRLML6402TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 3.7A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 10 V
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IRLML2502TRPBF infineon-irlml2502-datasheet-en.pdf
IRLML2502TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 4.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 15 V
на замовлення 2482 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
9+37.97 грн
14+22.61 грн
100+14.36 грн
500+10.13 грн
1000+9.05 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
IRLML2402TRPBF irlml2402pbf.pdf?fileId=5546d462533600a401535664e5ef25fa
IRLML2402TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 1.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 930mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: Micro3™/SOT-23
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 15 V
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IRLML6401TRPBF irlml6401pbf-1.pdf
IRLML6401TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 12V 4.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.3A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
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IRLML6302TRPBF irlml6302pbf.pdf?fileId=5546d462533600a4015356688c702627
IRLML6302TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 780MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 780mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 610mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.45 V
Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 15 V
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IRLMS6802TRPBF irlms6802pbf.pdf?fileId=5546d462533600a401535669349a2654
IRLMS6802TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 5.6A MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1079 pF @ 10 V
на замовлення 412 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
6+53.47 грн
10+31.71 грн
100+20.43 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
IRLMS2002TRPBF description irlms2002pbf.pdf?fileId=5546d462533600a4015356690f42264a
IRLMS2002TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 6.5A MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro6™(SOT23-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
на замовлення 1993 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
6+61.22 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
IRLMS1503TRPBF description irlms1503pbf.pdf?fileId=5546d462533600a401535668f6282644
IRLMS1503TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 3.2A MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 25 V
на замовлення 107 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
7+44.94 грн
12+26.49 грн
100+16.98 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
IRLL014NTRPBF description irll014npbf.pdf?fileId=5546d462533600a401535664368425cf
IRLL014NTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 2A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
на замовлення 30489 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5+68.19 грн
10+40.82 грн
100+26.37 грн
500+18.92 грн
1000+17.04 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
IRLMS5703TRPBF irlms5703pbf.pdf?fileId=5546d462533600a401535669171c264c
IRLMS5703TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 2.4A MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
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IRLMS6702TRPBF irlms6702pbf.pdf?fileId=5546d462533600a40153566923282650
IRLMS6702TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 2.4A MICRO6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 15 V
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IRFR3709ZTRPBF irfr3709zpbf.pdf?fileId=5546d462533600a401535631a47a20c5
IRFR3709ZTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 86A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V
товару немає в наявності
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IRF7201TRPBF description infineon-irf7201-datasheet-en.pdf?fileId=5546d462533600a4015355f13efb1ada
IRF7201TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 7.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.3A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
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IRFR9024NTRPBF description irfr9024npbf.pdf?fileId=5546d462533600a401535635f91d2132
IRFR9024NTRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 58231 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+101.51 грн
10+61.26 грн
100+40.64 грн
500+29.80 грн
1000+27.12 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRFR9120NTRPBF description irfr9120npbf.pdf?fileId=5546d462533600a40153563607932138
IRFR9120NTRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 6.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 3.9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 3680 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+112.36 грн
10+68.05 грн
100+45.35 грн
500+33.40 грн
1000+30.46 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRFR024NTRPBF description irfr024npbf.pdf?fileId=5546d462533600a40153562cf721203c
IRFR024NTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
на замовлення 94718 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+91.44 грн
10+55.37 грн
100+36.50 грн
500+26.65 грн
1000+24.21 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRFR3910TRPBF irfr3910pbf.pdf?fileId=5546d462533600a401535631f05d20df
IRFR3910TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 16A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 19054 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+114.69 грн
10+69.99 грн
100+46.79 грн
500+34.55 грн
1000+31.54 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRF7821TRPBF irf7821pbf.pdf?fileId=5546d462533600a401535608d7f31d06
IRF7821TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13.6A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 2381 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+106.16 грн
10+64.92 грн
100+43.31 грн
500+31.97 грн
1000+29.17 грн
2000+26.83 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IRLR120NTRPBF description irlr120npbf.pdf?fileId=5546d462533600a40153566965182665
IRLR120NTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
на замовлення 11884 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+96.09 грн
10+58.20 грн
100+38.47 грн
500+28.16 грн
1000+25.60 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRLR024NTRPBF description infineon-irlr024n-datasheet-en.pdf
IRLR024NTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
на замовлення 41463 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5+67.42 грн
10+40.52 грн
100+26.35 грн
500+19.00 грн
1000+17.16 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
IRFR5305TRPBF description infineon-irfr5305-datasheet-en.pdf
IRFR5305TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 31A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
на замовлення 49580 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+102.29 грн
10+62.16 грн
100+41.21 грн
500+30.24 грн
1000+27.53 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IRF7343TRPBF description infineon-irf7343-datasheet-en.pdf
IRF7343TRPBF
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 55V 4.7A/3.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 66388 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+101.51 грн
10+61.94 грн
100+41.06 грн
500+30.12 грн
1000+27.42 грн
2000+25.14 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
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