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CY8C4146AZS-S275 CY8C4146AZS-S275 Infineon Technologies Infineon-Automotive_PSoC_4100S_Plus-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8823155701884daaa2621e33 Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
1+587.16 грн
10+437.82 грн
25+405.83 грн
160+339.28 грн
320+328.53 грн
480+323.15 грн
960+310.08 грн
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IRFB7434GPBF IRFB7434GPBF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N CH 40V 195A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
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MB91F577BPMC-GSK5E2 MB91F577BPMC-GSK5E2 Infineon Technologies Description: IC MCU 32B 1.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 72K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 40x8/10b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 111
DigiKey Programmable: Not Verified
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MB91F577BHSPMC-GSK5E1 MB91F577BHSPMC-GSK5E1 Infineon Technologies download Description: IC MCU 32B 1.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 72K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 40x8/10b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 111
DigiKey Programmable: Not Verified
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IMBG65R060M2H IMBG65R060M2H Infineon Technologies Infineon-IMBG65R060M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b0019387a31dca4258 Description: IMBG65R060M2H
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.9A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.4A, 20V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.1mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V
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IMBG65R060M2H IMBG65R060M2H Infineon Technologies Infineon-IMBG65R060M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b0019387a31dca4258 Description: IMBG65R060M2H
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.9A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.4A, 20V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.1mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V
на замовлення 440 шт:
термін постачання 21-31 дні (днів)
1+498.46 грн
10+369.33 грн
25+341.67 грн
100+292.10 грн
250+278.51 грн
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IMBG65R033M2H IMBG65R033M2H Infineon Technologies Infineon-IMBG65R033M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b001938810c42c42ce Description: IMBG65R033M2H
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 400 V
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IMBG65R033M2H IMBG65R033M2H Infineon Technologies Infineon-IMBG65R033M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b001938810c42c42ce Description: IMBG65R033M2H
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 400 V
на замовлення 423 шт:
термін постачання 21-31 дні (днів)
1+733.95 грн
10+551.13 грн
25+512.20 грн
100+440.53 грн
250+421.38 грн
В кошику  од. на суму  грн.
IMBG65R026M2H IMBG65R026M2H Infineon Technologies Infineon-IMBG65R026M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b0019387f54b2542b0 Description: IMBG65R026M2H
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
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IMBG65R026M2H IMBG65R026M2H Infineon Technologies Infineon-IMBG65R026M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b0019387f54b2542b0 Description: IMBG65R026M2H
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
на замовлення 490 шт:
термін постачання 21-31 дні (днів)
1+884.66 грн
10+668.14 грн
25+622.32 грн
100+536.71 грн
250+514.16 грн
В кошику  од. на суму  грн.
IMBG65R010M2H IMBG65R010M2H Infineon Technologies Infineon-IMBG65R010M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b0019387a32c38425b Description: IMBG65R010M2H
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 158A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 535W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
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IMBG65R010M2H IMBG65R010M2H Infineon Technologies Infineon-IMBG65R010M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b0019387a32c38425b Description: IMBG65R010M2H
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 158A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 535W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
на замовлення 482 шт:
термін постачання 21-31 дні (днів)
1+1657.08 грн
10+1277.77 грн
25+1198.31 грн
100+1042.62 грн
250+1003.55 грн
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FS200R12N3T4RB81BPSA1 FS200R12N3T4RB81BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO3-4
Packaging: Tray
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+10995.89 грн
10+9405.65 грн
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IRS2607DSTRPBF IRS2607DSTRPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IRS2607DSTRPBF IRS2607DSTRPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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F3L300R12MT4PB23BPSA1 F3L300R12MT4PB23BPSA1 Infineon Technologies Infineon-F3L300R12MT4P_B23-DS-v03_00-EN.pdf?fileId=5546d4625debb399015e18a7da1f3327 Description: IGBT MOD 1200V 300A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
2+17834.95 грн
Мінімальне замовлення: 2
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F3L300R12MT4PB23BPSA1 F3L300R12MT4PB23BPSA1 Infineon Technologies Infineon-F3L300R12MT4P_B23-DS-v03_00-EN.pdf?fileId=5546d4625debb399015e18a7da1f3327 Description: IGBT MOD 1200V 300A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
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F3L300R12MT4PB22BPSA1 F3L300R12MT4PB22BPSA1 Infineon Technologies Infineon-F3L300R12MT4P_B22-DS-v03_00-EN.pdf?fileId=5546d4625debb399015e18a84176332d Description: IGBT MODULE MED POWER ECONO
Packaging: Bulk
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
2+17834.95 грн
Мінімальне замовлення: 2
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F3L300R12MT4PB22BPSA1 F3L300R12MT4PB22BPSA1 Infineon Technologies Infineon-F3L300R12MT4P_B22-DS-v03_00-EN.pdf?fileId=5546d4625debb399015e18a84176332d Description: IGBT MODULE MED POWER ECONO
Packaging: Tray
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IR21844PBF IR21844PBF Infineon Technologies ir2184.pdf?fileId=5546d462533600a4015355c955e616d4 description Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
на замовлення 1507 шт:
термін постачання 21-31 дні (днів)
108+192.55 грн
Мінімальне замовлення: 108
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IR21844PBF IR21844PBF Infineon Technologies ir2184.pdf?fileId=5546d462533600a4015355c955e616d4 description Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+317.91 грн
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IRFS4127PBF IRFS4127PBF Infineon Technologies irfs4127pbf.pdf?fileId=5546d462533600a401535636ee7b2192 description Description: MOSFET N-CH 200V 72A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V
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BCX5216H6327XTSA1 BCX5216H6327XTSA1 Infineon Technologies bcx51_bcx52_bcx53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589c08423034d&location=.en.product.findProductTypeByName.html_dgdl_bcx51_bcx52_bcx53.pdf Description: TRANS PNP 60V 1A PG-SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+8.23 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IR21084PBF IR21084PBF Infineon Technologies ir2108.pdf?fileId=5546d462533600a4015355c7dc321676 Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
119+174.61 грн
Мінімальне замовлення: 119
В кошику  од. на суму  грн.
IR21084PBF IR21084PBF Infineon Technologies ir2108.pdf?fileId=5546d462533600a4015355c7dc321676 Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IPD50R399CPATMA1 IPD50R399CPATMA1 Infineon Technologies Infineon-IPD50R399CP-DS-v02_01-en.pdf?fileId=db3a30432b16d655012b19cbfae82d36 Description: LOW POWER_LEGACY
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
на замовлення 2315 шт:
термін постачання 21-31 дні (днів)
3+106.76 грн
10+74.53 грн
100+54.64 грн
500+44.81 грн
1000+42.50 грн
Мінімальне замовлення: 3
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BCR112WH6327XTSA1 BCR112WH6327XTSA1 Infineon Technologies bcr112series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143a34902e01d0 Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 140 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
на замовлення 1521 шт:
термін постачання 21-31 дні (днів)
1521+3.74 грн
Мінімальне замовлення: 1521
В кошику  од. на суму  грн.
BCR133WH6327XTSA1 BCR133WH6327XTSA1 Infineon Technologies bcr133series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7f8a3f0288 Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 130 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 6828 шт:
термін постачання 21-31 дні (днів)
6828+2.25 грн
Мінімальне замовлення: 6828
В кошику  од. на суму  грн.
BCR135WH6327XTSA1 BCR135WH6327XTSA1 Infineon Technologies bcr135series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f8b054a0289 Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 12016 шт:
термін постачання 21-31 дні (днів)
12016+2.25 грн
Мінімальне замовлення: 12016
В кошику  од. на суму  грн.
IDWD30G120C5XKSA2 Infineon Technologies Description: SIC DISCRETE
Packaging: Tube
товару немає в наявності
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IPT60R180CM8XTMA1 IPT60R180CM8XTMA1 Infineon Technologies Description: IPT60R180CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
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IPT60R180CM8XTMA1 IPT60R180CM8XTMA1 Infineon Technologies Description: IPT60R180CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
на замовлення 1807 шт:
термін постачання 21-31 дні (днів)
3+153.85 грн
10+115.20 грн
100+93.61 грн
500+75.14 грн
1000+73.77 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CY7C1470V33-200BZI CY7C1470V33-200BZI Infineon Technologies Infineon-CY7C1470V33_CY7C1472V33_CY7C1474V33_72-Mbit_(2_M_36_4_M_18_1_M_72)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0dd343585&utm_source=cypress&utm_medium=referral&utm_camp Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY7C1470BV25-167AXC CY7C1470BV25-167AXC Infineon Technologies download Description: IC SRAM 72MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY7C1470BV25-200AXC CY7C1470BV25-200AXC Infineon Technologies download Description: IC SRAM 72MBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
на замовлення 162 шт:
термін постачання 21-31 дні (днів)
3+10654.95 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFS4115TRL7PP IRFS4115TRL7PP Infineon Technologies irfs4115-7ppbf.pdf?fileId=5546d462533600a401535636dd31218d Description: MOSFET N-CH 150V 105A D2PAK
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 63A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 50 V
на замовлення 2050 шт:
термін постачання 21-31 дні (днів)
139+161.65 грн
Мінімальне замовлення: 139
В кошику  од. на суму  грн.
IDP08E65D2XKSA1 IDP08E65D2XKSA1 Infineon Technologies DS_IDP08E65D2_1_1+%282%29.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433d68e984013d6944ca9a05e0 Description: DIODE STANDARD 650V 8A TO2202
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 1271 шт:
термін постачання 21-31 дні (днів)
228+91.10 грн
Мінімальне замовлення: 228
В кошику  од. на суму  грн.
1EDF5673FXUMA1 1EDF5673FXUMA1 Infineon Technologies Infineon-1EDF5673K-DS-v02_00-EN.pdf?fileId=5546d46266a498f50166c9b5b486226a Description: DGT ISO 1.5KV 1CH GT DVR DSO16
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 8A
Voltage - Isolation: 1500VDC
Approval Agency: CQC, CSA, UL, VDE
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 44ns, 44ns
Pulse Width Distortion (Max): 18ns (Typ)
Number of Channels: 1
Voltage - Output Supply: 3.13V ~ 3.47V
на замовлення 7465 шт:
термін постачання 21-31 дні (днів)
193+116.75 грн
Мінімальне замовлення: 193
В кошику  од. на суму  грн.
CYRF69313-40LFXC CYRF69313-40LFXC Infineon Technologies CYRF69313_Mar2014.pdf Description: IC RF TXRX+MCU ISM>1GHZ 40QFN
Packaging: Tray
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 8kB Flash, 256B SRAM
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.25V
Power - Output: 0dBm
Current - Receiving: 20.2mA ~ 23.4mA
Data Rate (Max): 1.5Mbps
Current - Transmitting: 22.4mA ~ 27.7mA
Supplier Device Package: 40-QFN (6x6)
GPIO: 14
Modulation: DSSS, GFSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI, USB
DigiKey Programmable: Not Verified
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IMW65R060M2HXKSA1 IMW65R060M2HXKSA1 Infineon Technologies IMW65R060M2HXKSA1.pdf Description: IMW65R060M2HXKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.8A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.4A, 20V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.1mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V
на замовлення 296 шт:
термін постачання 21-31 дні (днів)
1+516.51 грн
30+354.11 грн
120+327.06 грн
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IMW65R033M2HXKSA1 IMW65R033M2HXKSA1 Infineon Technologies Infineon-IMW65R033M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca501926b64fc70052c Description: IMW65R033M2HXKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 400 V
на замовлення 274 шт:
термін постачання 21-31 дні (днів)
1+836.78 грн
30+567.20 грн
120+507.42 грн
В кошику  од. на суму  грн.
IMW65R010M2HXKSA1 IMW65R010M2HXKSA1 Infineon Technologies IMW65R010M2HXKSA1.pdf Description: IMW65R010M2HXKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
на замовлення 352 шт:
термін постачання 21-31 дні (днів)
1+1697.11 грн
30+1223.30 грн
120+1116.85 грн
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CY7C25632KV18-400BZC CY7C25632KV18-400BZC Infineon Technologies Infineon-CY7C25632KV18_CY7C25652KV18_72-Mbit_QDR(R)_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec20e0136ec&utm_source=cypress&utm_medium=referra Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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IGLR70R140D2SXUMA1 Infineon Technologies Description: IGLR70R140D2SXUMA1
Packaging: Tape & Reel (TR)
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IGLR70R140D2SXUMA1 Infineon Technologies Description: IGLR70R140D2SXUMA1
Packaging: Cut Tape (CT)
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IAUZN04S7N013ATMA2 Infineon Technologies Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 193A (Tj)
Rds On (Max) @ Id, Vgs: 1.33mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3V @ 35µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3264 pF @ 20 V
Qualification: AEC-Q101
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BSC088N15LS5ATMA1 BSC088N15LS5ATMA1 Infineon Technologies BSC088N15LS5_Rev2.0_12-13-23.pdf Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 46A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 107µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 75 V
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BSC088N15LS5ATMA1 BSC088N15LS5ATMA1 Infineon Technologies BSC088N15LS5_Rev2.0_12-13-23.pdf Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 46A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 107µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 75 V
на замовлення 2361 шт:
термін постачання 21-31 дні (днів)
2+182.90 грн
10+130.85 грн
100+107.32 грн
500+85.45 грн
1000+82.77 грн
2000+81.62 грн
Мінімальне замовлення: 2
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IMT40R011M2HXTMA1 IMT40R011M2HXTMA1 Infineon Technologies Infineon-IMT40R011M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f581c74973398 Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 144A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 429W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 200 V
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IMT40R011M2HXTMA1 IMT40R011M2HXTMA1 Infineon Technologies Infineon-IMT40R011M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f581c74973398 Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 144A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 429W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 200 V
на замовлення 1895 шт:
термін постачання 21-31 дні (днів)
1+1192.37 грн
10+815.46 грн
100+762.10 грн
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CY8CTMA768BUI-13 Infineon Technologies download Description: IC TRUETOUCH CAPSENSE 84BGA
Packaging: Tray
DigiKey Programmable: Not Verified
на замовлення 2463 шт:
термін постачання 21-31 дні (днів)
35+646.62 грн
Мінімальне замовлення: 35
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DD400S45KL3B5NOSA1 DD400S45KL3B5NOSA1 Infineon Technologies Infineon-DD400S45KL3_B5-DS-v03_00-en_de.pdf?fileId=db3a30433f565836013f6213c07e4b4e Description: DIODE MODULE GP 4500V AIHV130-4
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: A-IHV130-4
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 400 A
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+87270.04 грн
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AIMDQ75R040M1HXUMA1 AIMDQ75R040M1HXUMA1 Infineon Technologies Infineon-AIMDQ75R040M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b60e0cfbc2179 Description: IGBT
Packaging: Tape & Reel (TR)
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AIMDQ75R040M1HXUMA1 AIMDQ75R040M1HXUMA1 Infineon Technologies Infineon-AIMDQ75R040M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b60e0cfbc2179 Description: IGBT
Packaging: Cut Tape (CT)
на замовлення 187 шт:
термін постачання 21-31 дні (днів)
1+803.81 грн
10+535.03 грн
100+399.89 грн
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IRG4PC50KPBF IRG4PC50KPBF Infineon Technologies fundamentals-of-power-semiconductors description Description: IGBT 600V 52A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 38ns/160ns
Switching Energy: 490µJ (on), 680µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 200 nC
Current - Collector (Ic) (Max): 52 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 104 A
Power - Max: 200 W
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CY8C4014SXI-421T CY8C4014SXI-421T Infineon Technologies Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 16KB FLASH 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 16-SOIC
Number of I/O: 13
DigiKey Programmable: Not Verified
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FF150R12YT3BOMA1 Infineon Technologies Description: IGBT MOD 1200V 200A 625W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 625 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
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ICE2QR4765ZXKLA1 ICE2QR4765ZXKLA1 Infineon Technologies Infineon-ICE2QR4765Z-DS-v02_01-en.pdf?fileId=db3a304330046413013048a5435f51d2 Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Power (Watts): 31 W
на замовлення 1925 шт:
термін постачання 21-31 дні (днів)
243+85.58 грн
Мінімальне замовлення: 243
В кошику  од. на суму  грн.
TLD11731ETXUMA1 TLD11731ETXUMA1 Infineon Technologies Infineon-TLD1173-1ET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2d2232c625d Description: LITIX
Packaging: Tape & Reel (TR)
Package / Case: 16-TFSOP, 16-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 36V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 400mA
Internal Switch(s): No
Supplier Device Package: PG-TFDSO-16-1
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q100
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TLD11731ETXUMA1 TLD11731ETXUMA1 Infineon Technologies Infineon-TLD1173-1ET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2d2232c625d Description: LITIX
Packaging: Cut Tape (CT)
Package / Case: 16-TFSOP, 16-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 36V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 400mA
Internal Switch(s): No
Supplier Device Package: PG-TFDSO-16-1
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q100
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CY8C4146AZS-S275 Infineon-Automotive_PSoC_4100S_Plus-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8823155701884daaa2621e33
CY8C4146AZS-S275
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+587.16 грн
10+437.82 грн
25+405.83 грн
160+339.28 грн
320+328.53 грн
480+323.15 грн
960+310.08 грн
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IRFB7434GPBF IR_PartNumberingSystem.pdf
IRFB7434GPBF
Виробник: Infineon Technologies
Description: MOSFET N CH 40V 195A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
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MB91F577BPMC-GSK5E2
MB91F577BPMC-GSK5E2
Виробник: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 72K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 40x8/10b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 111
DigiKey Programmable: Not Verified
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MB91F577BHSPMC-GSK5E1 download
MB91F577BHSPMC-GSK5E1
Виробник: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 72K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 40x8/10b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 111
DigiKey Programmable: Not Verified
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IMBG65R060M2H Infineon-IMBG65R060M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b0019387a31dca4258
IMBG65R060M2H
Виробник: Infineon Technologies
Description: IMBG65R060M2H
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.9A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.4A, 20V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.1mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V
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IMBG65R060M2H Infineon-IMBG65R060M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b0019387a31dca4258
IMBG65R060M2H
Виробник: Infineon Technologies
Description: IMBG65R060M2H
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.9A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.4A, 20V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.1mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V
на замовлення 440 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+498.46 грн
10+369.33 грн
25+341.67 грн
100+292.10 грн
250+278.51 грн
В кошику  од. на суму  грн.
IMBG65R033M2H Infineon-IMBG65R033M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b001938810c42c42ce
IMBG65R033M2H
Виробник: Infineon Technologies
Description: IMBG65R033M2H
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 400 V
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IMBG65R033M2H Infineon-IMBG65R033M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b001938810c42c42ce
IMBG65R033M2H
Виробник: Infineon Technologies
Description: IMBG65R033M2H
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 400 V
на замовлення 423 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+733.95 грн
10+551.13 грн
25+512.20 грн
100+440.53 грн
250+421.38 грн
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IMBG65R026M2H Infineon-IMBG65R026M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b0019387f54b2542b0
IMBG65R026M2H
Виробник: Infineon Technologies
Description: IMBG65R026M2H
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
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IMBG65R026M2H Infineon-IMBG65R026M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b0019387f54b2542b0
IMBG65R026M2H
Виробник: Infineon Technologies
Description: IMBG65R026M2H
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
на замовлення 490 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+884.66 грн
10+668.14 грн
25+622.32 грн
100+536.71 грн
250+514.16 грн
В кошику  од. на суму  грн.
IMBG65R010M2H Infineon-IMBG65R010M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b0019387a32c38425b
IMBG65R010M2H
Виробник: Infineon Technologies
Description: IMBG65R010M2H
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 158A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 535W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
товару немає в наявності
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IMBG65R010M2H Infineon-IMBG65R010M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b0019387a32c38425b
IMBG65R010M2H
Виробник: Infineon Technologies
Description: IMBG65R010M2H
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 158A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 535W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
на замовлення 482 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1657.08 грн
10+1277.77 грн
25+1198.31 грн
100+1042.62 грн
250+1003.55 грн
В кошику  од. на суму  грн.
FS200R12N3T4RB81BPSA1
FS200R12N3T4RB81BPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3-4
Packaging: Tray
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+10995.89 грн
10+9405.65 грн
В кошику  од. на суму  грн.
IRS2607DSTRPBF fundamentals-of-power-semiconductors
IRS2607DSTRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IRS2607DSTRPBF fundamentals-of-power-semiconductors
IRS2607DSTRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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F3L300R12MT4PB23BPSA1 Infineon-F3L300R12MT4P_B23-DS-v03_00-EN.pdf?fileId=5546d4625debb399015e18a7da1f3327
F3L300R12MT4PB23BPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 300A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+17834.95 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
F3L300R12MT4PB23BPSA1 Infineon-F3L300R12MT4P_B23-DS-v03_00-EN.pdf?fileId=5546d4625debb399015e18a7da1f3327
F3L300R12MT4PB23BPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 300A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
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F3L300R12MT4PB22BPSA1 Infineon-F3L300R12MT4P_B22-DS-v03_00-EN.pdf?fileId=5546d4625debb399015e18a84176332d
F3L300R12MT4PB22BPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE MED POWER ECONO
Packaging: Bulk
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+17834.95 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
F3L300R12MT4PB22BPSA1 Infineon-F3L300R12MT4P_B22-DS-v03_00-EN.pdf?fileId=5546d4625debb399015e18a84176332d
F3L300R12MT4PB22BPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE MED POWER ECONO
Packaging: Tray
товару немає в наявності
В кошику  од. на суму  грн.
IR21844PBF description ir2184.pdf?fileId=5546d462533600a4015355c955e616d4
IR21844PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
на замовлення 1507 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
108+192.55 грн
Мінімальне замовлення: 108
В кошику  од. на суму  грн.
IR21844PBF description ir2184.pdf?fileId=5546d462533600a4015355c955e616d4
IR21844PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+317.91 грн
В кошику  од. на суму  грн.
IRFS4127PBF description irfs4127pbf.pdf?fileId=5546d462533600a401535636ee7b2192
IRFS4127PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 72A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V
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BCX5216H6327XTSA1 bcx51_bcx52_bcx53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589c08423034d&location=.en.product.findProductTypeByName.html_dgdl_bcx51_bcx52_bcx53.pdf
BCX5216H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 60V 1A PG-SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+8.23 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IR21084PBF ir2108.pdf?fileId=5546d462533600a4015355c7dc321676
IR21084PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
119+174.61 грн
Мінімальне замовлення: 119
В кошику  од. на суму  грн.
IR21084PBF ir2108.pdf?fileId=5546d462533600a4015355c7dc321676
IR21084PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IPD50R399CPATMA1 Infineon-IPD50R399CP-DS-v02_01-en.pdf?fileId=db3a30432b16d655012b19cbfae82d36
IPD50R399CPATMA1
Виробник: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
на замовлення 2315 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+106.76 грн
10+74.53 грн
100+54.64 грн
500+44.81 грн
1000+42.50 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BCR112WH6327XTSA1 bcr112series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143a34902e01d0
BCR112WH6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 140 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
на замовлення 1521 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1521+3.74 грн
Мінімальне замовлення: 1521
В кошику  од. на суму  грн.
BCR133WH6327XTSA1 bcr133series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7f8a3f0288
BCR133WH6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 130 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 6828 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6828+2.25 грн
Мінімальне замовлення: 6828
В кошику  од. на суму  грн.
BCR135WH6327XTSA1 bcr135series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f8b054a0289
BCR135WH6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 12016 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12016+2.25 грн
Мінімальне замовлення: 12016
В кошику  од. на суму  грн.
IDWD30G120C5XKSA2
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
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IPT60R180CM8XTMA1
IPT60R180CM8XTMA1
Виробник: Infineon Technologies
Description: IPT60R180CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
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IPT60R180CM8XTMA1
IPT60R180CM8XTMA1
Виробник: Infineon Technologies
Description: IPT60R180CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
на замовлення 1807 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+153.85 грн
10+115.20 грн
100+93.61 грн
500+75.14 грн
1000+73.77 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CY7C1470V33-200BZI Infineon-CY7C1470V33_CY7C1472V33_CY7C1474V33_72-Mbit_(2_M_36_4_M_18_1_M_72)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0dd343585&utm_source=cypress&utm_medium=referral&utm_camp
CY7C1470V33-200BZI
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY7C1470BV25-167AXC download
CY7C1470BV25-167AXC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY7C1470BV25-200AXC download
CY7C1470BV25-200AXC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
на замовлення 162 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+10654.95 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFS4115TRL7PP irfs4115-7ppbf.pdf?fileId=5546d462533600a401535636dd31218d
IRFS4115TRL7PP
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 105A D2PAK
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 63A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 50 V
на замовлення 2050 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
139+161.65 грн
Мінімальне замовлення: 139
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IDP08E65D2XKSA1 DS_IDP08E65D2_1_1+%282%29.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433d68e984013d6944ca9a05e0
IDP08E65D2XKSA1
Виробник: Infineon Technologies
Description: DIODE STANDARD 650V 8A TO2202
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 1271 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
228+91.10 грн
Мінімальне замовлення: 228
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1EDF5673FXUMA1 Infineon-1EDF5673K-DS-v02_00-EN.pdf?fileId=5546d46266a498f50166c9b5b486226a
1EDF5673FXUMA1
Виробник: Infineon Technologies
Description: DGT ISO 1.5KV 1CH GT DVR DSO16
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 8A
Voltage - Isolation: 1500VDC
Approval Agency: CQC, CSA, UL, VDE
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 44ns, 44ns
Pulse Width Distortion (Max): 18ns (Typ)
Number of Channels: 1
Voltage - Output Supply: 3.13V ~ 3.47V
на замовлення 7465 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
193+116.75 грн
Мінімальне замовлення: 193
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CYRF69313-40LFXC CYRF69313_Mar2014.pdf
CYRF69313-40LFXC
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU ISM>1GHZ 40QFN
Packaging: Tray
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 8kB Flash, 256B SRAM
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.25V
Power - Output: 0dBm
Current - Receiving: 20.2mA ~ 23.4mA
Data Rate (Max): 1.5Mbps
Current - Transmitting: 22.4mA ~ 27.7mA
Supplier Device Package: 40-QFN (6x6)
GPIO: 14
Modulation: DSSS, GFSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI, USB
DigiKey Programmable: Not Verified
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IMW65R060M2HXKSA1 IMW65R060M2HXKSA1.pdf
IMW65R060M2HXKSA1
Виробник: Infineon Technologies
Description: IMW65R060M2HXKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.8A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.4A, 20V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.1mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V
на замовлення 296 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+516.51 грн
30+354.11 грн
120+327.06 грн
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IMW65R033M2HXKSA1 Infineon-IMW65R033M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca501926b64fc70052c
IMW65R033M2HXKSA1
Виробник: Infineon Technologies
Description: IMW65R033M2HXKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 400 V
на замовлення 274 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+836.78 грн
30+567.20 грн
120+507.42 грн
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IMW65R010M2HXKSA1 IMW65R010M2HXKSA1.pdf
IMW65R010M2HXKSA1
Виробник: Infineon Technologies
Description: IMW65R010M2HXKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
на замовлення 352 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1697.11 грн
30+1223.30 грн
120+1116.85 грн
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CY7C25632KV18-400BZC Infineon-CY7C25632KV18_CY7C25652KV18_72-Mbit_QDR(R)_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec20e0136ec&utm_source=cypress&utm_medium=referra
CY7C25632KV18-400BZC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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IGLR70R140D2SXUMA1
Виробник: Infineon Technologies
Description: IGLR70R140D2SXUMA1
Packaging: Tape & Reel (TR)
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IGLR70R140D2SXUMA1
Виробник: Infineon Technologies
Description: IGLR70R140D2SXUMA1
Packaging: Cut Tape (CT)
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IAUZN04S7N013ATMA2
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 193A (Tj)
Rds On (Max) @ Id, Vgs: 1.33mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3V @ 35µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3264 pF @ 20 V
Qualification: AEC-Q101
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BSC088N15LS5ATMA1 BSC088N15LS5_Rev2.0_12-13-23.pdf
BSC088N15LS5ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 46A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 107µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 75 V
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BSC088N15LS5ATMA1 BSC088N15LS5_Rev2.0_12-13-23.pdf
BSC088N15LS5ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 46A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 107µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 75 V
на замовлення 2361 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+182.90 грн
10+130.85 грн
100+107.32 грн
500+85.45 грн
1000+82.77 грн
2000+81.62 грн
Мінімальне замовлення: 2
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IMT40R011M2HXTMA1 Infineon-IMT40R011M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f581c74973398
IMT40R011M2HXTMA1
Виробник: Infineon Technologies
Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 144A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 429W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 200 V
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IMT40R011M2HXTMA1 Infineon-IMT40R011M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f581c74973398
IMT40R011M2HXTMA1
Виробник: Infineon Technologies
Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 144A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 429W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 200 V
на замовлення 1895 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1192.37 грн
10+815.46 грн
100+762.10 грн
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CY8CTMA768BUI-13 download
Виробник: Infineon Technologies
Description: IC TRUETOUCH CAPSENSE 84BGA
Packaging: Tray
DigiKey Programmable: Not Verified
на замовлення 2463 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
35+646.62 грн
Мінімальне замовлення: 35
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DD400S45KL3B5NOSA1 Infineon-DD400S45KL3_B5-DS-v03_00-en_de.pdf?fileId=db3a30433f565836013f6213c07e4b4e
DD400S45KL3B5NOSA1
Виробник: Infineon Technologies
Description: DIODE MODULE GP 4500V AIHV130-4
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: A-IHV130-4
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 400 A
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+87270.04 грн
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AIMDQ75R040M1HXUMA1 Infineon-AIMDQ75R040M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b60e0cfbc2179
AIMDQ75R040M1HXUMA1
Виробник: Infineon Technologies
Description: IGBT
Packaging: Tape & Reel (TR)
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AIMDQ75R040M1HXUMA1 Infineon-AIMDQ75R040M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b60e0cfbc2179
AIMDQ75R040M1HXUMA1
Виробник: Infineon Technologies
Description: IGBT
Packaging: Cut Tape (CT)
на замовлення 187 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+803.81 грн
10+535.03 грн
100+399.89 грн
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IRG4PC50KPBF description fundamentals-of-power-semiconductors
IRG4PC50KPBF
Виробник: Infineon Technologies
Description: IGBT 600V 52A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 38ns/160ns
Switching Energy: 490µJ (on), 680µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 200 nC
Current - Collector (Ic) (Max): 52 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 104 A
Power - Max: 200 W
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CY8C4014SXI-421T Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4014SXI-421T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 16-SOIC
Number of I/O: 13
DigiKey Programmable: Not Verified
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FF150R12YT3BOMA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 200A 625W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 625 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
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ICE2QR4765ZXKLA1 Infineon-ICE2QR4765Z-DS-v02_01-en.pdf?fileId=db3a304330046413013048a5435f51d2
ICE2QR4765ZXKLA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Power (Watts): 31 W
на замовлення 1925 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
243+85.58 грн
Мінімальне замовлення: 243
В кошику  од. на суму  грн.
TLD11731ETXUMA1 Infineon-TLD1173-1ET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2d2232c625d
TLD11731ETXUMA1
Виробник: Infineon Technologies
Description: LITIX
Packaging: Tape & Reel (TR)
Package / Case: 16-TFSOP, 16-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 36V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 400mA
Internal Switch(s): No
Supplier Device Package: PG-TFDSO-16-1
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
TLD11731ETXUMA1 Infineon-TLD1173-1ET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2d2232c625d
TLD11731ETXUMA1
Виробник: Infineon Technologies
Description: LITIX
Packaging: Cut Tape (CT)
Package / Case: 16-TFSOP, 16-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 36V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 400mA
Internal Switch(s): No
Supplier Device Package: PG-TFDSO-16-1
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
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