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GS61008P-MR GS61008P-MR Infineon Technologies Description: GS61008P-MR
Packaging: Cut Tape (CT)
Package / Case: 5-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
на замовлення 1110 шт:
термін постачання 21-31 дні (днів)
1+675.00 грн
10+445.58 грн
100+420.35 грн
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S6J323CKSPSE20000 S6J323CKSPSE20000 Infineon Technologies Infineon-S6J3200_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v18_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee0c1436670&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_int Description: IC MCU 32BIT 2.0625MB 208TEQFP
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 46x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Number of I/O: 120
DigiKey Programmable: Not Verified
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S6J335EKSCSE2000A Infineon Technologies Infineon-S6J3350_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v13_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0edb378e5e0a Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.16MB (4.16M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 16x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.2V
Connectivity: CANbus, CSIO, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Number of I/O: 208
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S6J335EKBESE20000 Infineon Technologies Infineon-S6J3350_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v13_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0edb378e5e0a Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.16MB (4.16M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 16x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.2V
Connectivity: CANbus, CSIO, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Number of I/O: 208
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S6J335EKSESE20000 Infineon Technologies Infineon-S6J3350_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v13_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0edb378e5e0a Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.16MB (4.16M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 16x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.2V
Connectivity: CANbus, CSIO, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Number of I/O: 208
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MB9EF226PMC-GSK5E2 MB9EF226PMC-GSK5E2 Infineon Technologies Infineon-CY9EF226_Titan_CY9EF226_Series-AdditionalTechnicalInformation-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede63e2634d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 2MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 208K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-R4
Data Converters: A/D 50x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 117
DigiKey Programmable: Not Verified
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CY9EF226BPMC-GSE2 CY9EF226BPMC-GSE2 Infineon Technologies Infineon-CY9EF226_Titan_CY9EF226_Series-AdditionalTechnicalInformation-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede63e2634d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 2MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 208K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 48K x 8
Core Processor: ARM® Cortex®-R4
Data Converters: A/D 50x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 117
DigiKey Programmable: Not Verified
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AUIRFR8405TRL AUIRFR8405TRL Infineon Technologies auirfr8405.pdf?fileId=5546d462533600a4015355b6216514a5 Description: MOSFET N-CH 40V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.98mOhm @ 90A, 10V
Power Dissipation (Max): 163W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5171 pF @ 25 V
Qualification: AEC-Q101
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AUIRFR8405TRL AUIRFR8405TRL Infineon Technologies auirfr8405.pdf?fileId=5546d462533600a4015355b6216514a5 Description: MOSFET N-CH 40V 100A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.98mOhm @ 90A, 10V
Power Dissipation (Max): 163W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5171 pF @ 25 V
Qualification: AEC-Q101
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AUIRFS8405TRL AUIRFS8405TRL Infineon Technologies auirfs8405.pdf?fileId=5546d462533600a4015355b7069d14de Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 163W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5193 pF @ 25 V
Qualification: AEC-Q101
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S26HS512TGABHI000 S26HS512TGABHI000 Infineon Technologies Infineon-AN200810_S25FL-P_(32_Mb_64_Mb)_Package_Routing_Guide-ApplicationNotes-v03_00-EN.pdf?fileId=8ac78c8c7cdc391c017d07432ba2664a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 512MBIT SPI 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 122 шт:
термін постачання 21-31 дні (днів)
1+613.34 грн
10+548.58 грн
25+531.81 грн
50+487.17 грн
100+475.32 грн
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IRGP4266PBF IRGP4266PBF Infineon Technologies IRGP4266%28-E%29PbF.pdf Description: IGBT 650V 140A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 80ns/200ns
Switching Energy: 3.2mJ (on), 1.7mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 450 W
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BSP170IATMA1 BSP170IATMA1 Infineon Technologies 448_BSP170I.pdf Description: BSP170IATMA1
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.88A (Ta), 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.9A, 10V
Supplier Device Package: PG-SOT223-4-U01
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
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BSP170IATMA1 BSP170IATMA1 Infineon Technologies 448_BSP170I.pdf Description: BSP170IATMA1
Packaging: Cut Tape (CT)
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.88A (Ta), 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.9A, 10V
Supplier Device Package: PG-SOT223-4-U01
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
на замовлення 1961 шт:
термін постачання 21-31 дні (днів)
7+51.80 грн
11+30.80 грн
100+19.79 грн
500+14.14 грн
1000+12.70 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BSP171IATMA1 BSP171IATMA1 Infineon Technologies 448_BSP171I.pdf Description: BSP171IATMA1
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
Supplier Device Package: PG-SOT223-4-U01
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
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BSP171IATMA1 BSP171IATMA1 Infineon Technologies 448_BSP171I.pdf Description: BSP171IATMA1
Packaging: Cut Tape (CT)
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
Supplier Device Package: PG-SOT223-4-U01
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
на замовлення 2937 шт:
термін постачання 21-31 дні (днів)
6+55.09 грн
10+32.94 грн
100+21.24 грн
500+15.21 грн
1000+13.69 грн
Мінімальне замовлення: 6
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4DIR2401HAXUMA1 4DIR2401HAXUMA1 Infineon Technologies Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxHA_family-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d01899cd5eb0a5610 Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 2/2
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 33ns, 33ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 3ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
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4DIR2401HAXUMA1 4DIR2401HAXUMA1 Infineon Technologies Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxHA_family-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d01899cd5eb0a5610 Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 2/2
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 33ns, 33ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 3ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
на замовлення 1402 шт:
термін постачання 21-31 дні (днів)
2+176.77 грн
10+122.56 грн
100+94.40 грн
500+76.95 грн
Мінімальне замовлення: 2
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TLE4268GXUMA2 TLE4268GXUMA2 Infineon Technologies Infineon-TLE4268-DS-v01_60-EN.pdf?fileId=5546d46259d9a4bf0159f967eb273e4d Description: IC REG LIN 5V 150MA PG-DSO-20-35
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 450 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-20-35
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 20 mA
Qualification: AEC-Q100
на замовлення 28529 шт:
термін постачання 21-31 дні (днів)
229+92.39 грн
Мінімальне замовлення: 229
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TD190N18SOFHPSA1 TD190N18SOFHPSA1 Infineon Technologies Infineon-TT190N18SOF-DS-v03_01-EN.pdf?fileId=5546d4625cc9456a015d06e57a387eed Description: SCR MODULE 1.8KV 275A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 145 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 190 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 275 A
Voltage - Off State: 1.8 kV
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+3865.00 грн
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TD280N18SOFHPSA1 TD280N18SOFHPSA1 Infineon Technologies Infineon-TT280N18SOF-DS-v03_01-EN.pdf?fileId=5546d4625cc9456a015d06e50ebf7edb Description: SCR MODULE 1.8KV 520A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 280 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 1.8 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+6774.65 грн
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TD61N16KOFAHPSA1 Infineon Technologies Description: SCR MODULE 1.6KV 120A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 76 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.6 kV
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CYT2B93CACQ0AZEGST CYT2B93CACQ0AZEGST Infineon Technologies Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c Description: IC MCU 32BT 2.0625MB FLSH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 45x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 49
DigiKey Programmable: Not Verified
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CY7C1525KV18-300BZC CY7C1525KV18-300BZC Infineon Technologies CY7C1510%2C2%2C4%2C25KV18.pdf Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 8M x 9
DigiKey Programmable: Not Verified
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CY8CLED08-48PVXI CY8CLED08-48PVXI Infineon Technologies CY8CLED08.pdf Description: IC MCU 8BIT 16KB FLASH 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: HB LED Controller
Core Processor: M8C
Supplier Device Package: 48-SSOP
Number of I/O: 44
DigiKey Programmable: Not Verified
на замовлення 448 шт:
термін постачання 21-31 дні (днів)
1+1028.53 грн
10+781.66 грн
30+720.67 грн
120+625.24 грн
270+603.38 грн
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IRGS10B60KDTRLP IRGS10B60KDTRLP Infineon Technologies IRG%28B%2CS%2CSL%2910B60KDPbF.pdf Description: IGBT NPT 600V 22A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 30ns/230ns
Switching Energy: 140µJ (on), 250µJ (off)
Test Condition: 400V, 10A, 47Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 44 A
Power - Max: 156 W
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
10+108.44 грн
Мінімальне замовлення: 10
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CYT4BBBCEBQ1BZSGST CYT4BBBCEBQ1BZSGST Infineon Technologies Infineon-TRAVEO_T2G_CYT3BB_4BB-DataSheet-v09_00-EN.pdf?fileId=5546d4627883d7e00178a73ba6ad1732 Description: TRAVEO-2 BODY HIGH-END
Packaging: Tape & Reel (TR)
Package / Case: 272-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 72x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 272-BGA (16x16)
Grade: Automotive
Number of I/O: 207
Qualification: AEC-Q100
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CY2XP24ZXI CY2XP24ZXI Infineon Technologies CY2XP24.pdf Description: IC CLOCK GENERATOR 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVPECL
Frequency - Max: 187.5MHz
Type: Clock Generator
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 8-TSSOP
PLL: Yes
Divider/Multiplier: Yes/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 261 шт:
термін постачання 21-31 дні (днів)
1+861.63 грн
10+651.82 грн
25+607.31 грн
162+511.80 грн
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FM25V02A-DGQTR FM25V02A-DGQTR Infineon Technologies Infineon-FM25V02A_256_Kbit_(32K_8)_Serial_(SPI)_F_RAM_with_Extended_Temperature-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8f7554166&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integrati Description: IC FRAM 256KBIT SPI 40MHZ 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (4x4.5)
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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IRSM505-044PA IRSM505-044PA Infineon Technologies IRSM505-044_IRSM515-044_Series.pdf Description: IC HALF BRIDGE DRIVER 3A 23SOP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 800mOhm
Applications: AC Motors
Current - Output / Channel: 3A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-SOP
Fault Protection: UVLO
Load Type: Inductive
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CY8C23533-24LQXI CY8C23533-24LQXI Infineon Technologies Infineon-CY8C23533-24LQXI-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6c7463d3b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 8x14b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 26
DigiKey Programmable: Not Verified
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DF17MR12W1M1HFB86BPSA1 Infineon Technologies Infineon-DF17MR12W1M1HF_B68-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c85ecb34701867865ac783d9f Description: EASY STANDARD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 3 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V
Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 18V
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 20mA
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IRS2308PBF IRS2308PBF Infineon Technologies irs2308.pdf?fileId=5546d462533600a40153567a98ac2804 Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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2ED3140MC12LXUMA1 2ED3140MC12LXUMA1 Infineon Technologies Infineon-2ED314xMC12L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a019058e3ec3a2da2 Description: 2ED3140MC12LXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
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2ED3140MC12LXUMA1 2ED3140MC12LXUMA1 Infineon Technologies Infineon-2ED314xMC12L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a019058e3ec3a2da2 Description: 2ED3140MC12LXUMA1
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
на замовлення 1138 шт:
термін постачання 21-31 дні (днів)
3+156.21 грн
10+110.92 грн
25+101.18 грн
100+84.87 грн
250+80.07 грн
500+77.17 грн
Мінімальне замовлення: 3
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IPT60R120CM8XTMA1 IPT60R120CM8XTMA1 Infineon Technologies Description: IPT60R120CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.3A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 200µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1045 pF @ 400 V
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IPT60R120CM8XTMA1 IPT60R120CM8XTMA1 Infineon Technologies Description: IPT60R120CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.3A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 200µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1045 pF @ 400 V
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IPT60R099CM8XTMA1 IPT60R099CM8XTMA1 Infineon Technologies DS_IPT60R099CM8_2_0.pdf Description: IPT60R099CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.1A, 10V
Power Dissipation (Max): 186W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 260µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
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IPT60R099CM8XTMA1 IPT60R099CM8XTMA1 Infineon Technologies DS_IPT60R099CM8_2_0.pdf Description: IPT60R099CM8XTMA1
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.1A, 10V
Power Dissipation (Max): 186W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 260µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
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CY62146GSL-45ZSXI Infineon Technologies Infineon-Complete_freedom_from_soft_errors-ProductBrochure-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f64de115077&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MB 45NS 44TSOPII
Packaging: Tray
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GS-065-030-2-L-MR GS-065-030-2-L-MR Infineon Technologies Description: GS-065-030-2-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
250+412.66 грн
Мінімальне замовлення: 250
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GS-065-030-2-L-MR GS-065-030-2-L-MR Infineon Technologies Description: GS-065-030-2-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
на замовлення 567 шт:
термін постачання 21-31 дні (днів)
1+852.59 грн
10+606.53 грн
100+563.46 грн
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S25FL128SDPMFV001 S25FL128SDPMFV001 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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EVAL3KWDBPFCC72TOBO1 EVAL3KWDBPFCC72TOBO1 Infineon Technologies Description: 3000W DUAL LLC EVAL
Packaging: Bulk
Function: Wireless Power Supply/Charging
Type: Power Management
Contents: Board(s)
Primary Attributes: PFC
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TD500N16KOFTIMHPSA1 TD500N16KOFTIMHPSA1 Infineon Technologies Infineon-TT500N-DS-v03_04-EN.pdf?fileId=db3a30434486a89301448d34d0f7790d Description: SCR MODULE 1.8KV 900A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.8 kV
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CY22150FZXCT CY22150FZXCT Infineon Technologies download Description: IC CLOCK GENERATOR 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 200MHz
Type: Clock Generator, Fanout Distribution
Input: LVCMOS, LVTTL, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Verified
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CY22150FZXCT CY22150FZXCT Infineon Technologies download Description: IC CLOCK GENERATOR 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 200MHz
Type: Clock Generator, Fanout Distribution
Input: LVCMOS, LVTTL, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Verified
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IAUCN04S7N006TATMA1 Infineon Technologies Description: IAUCN04S7N006TATMA1
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 205W (Tc)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10040 pF @ 20 V
Qualification: AEC-Q101
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IAUCN04S7N006TATMA1 Infineon Technologies Description: IAUCN04S7N006TATMA1
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 205W (Tc)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10040 pF @ 20 V
Qualification: AEC-Q101
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IMZC120R012M2HXKSA1 IMZC120R012M2HXKSA1 Infineon Technologies IMZC120R012M2HXKSA1.pdf Description: SICFET N-CH 1200V 129A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 57A, 18V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 17.8mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 800 V
на замовлення 1003 шт:
термін постачання 21-31 дні (днів)
1+1659.13 грн
30+1020.84 грн
120+980.49 грн
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DD600N16KXPSA1 DD600N16KXPSA1 Infineon Technologies Infineon-DD600N-DS-v03_02-EN.pdf?fileId=db3a304412b407950112b42fbcc44d54 Description: DIODE MODULE GP 1600V BGPB60E2A1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 600A
Supplier Device Package: BG-PB60E2A-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1.8 kA
Current - Reverse Leakage @ Vr: 40 mA @ 1600 V
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IRS21064PBF IRS21064PBF Infineon Technologies INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
123+176.38 грн
Мінімальне замовлення: 123
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IRS21064PBF IRS21064PBF Infineon Technologies INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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S99FL512SAGMFI010 Infineon Technologies Description: IC FLASH
Packaging: Bulk
Memory Format: FLASH
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IR4426PBF IR4426PBF Infineon Technologies ir4426.pdf?fileId=5546d462533600a4015355d60b491822 description Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
на замовлення 21734 шт:
термін постачання 21-31 дні (днів)
157+134.70 грн
Мінімальне замовлення: 157
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IR4426PBF IR4426PBF Infineon Technologies ir4426.pdf?fileId=5546d462533600a4015355d60b491822 description Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
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CY8C4125LQE-S433 CY8C4125LQE-S433 Infineon Technologies Infineon-CY8C41xx_Automotive_PSoC_4_PSoC_4100S_family_based_on_Arm_Cortex_-M0_CPU-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee64c786e7a Description: IC MCU 32BIT 32KB FLASH 40UFQFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
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CYW20721B2KWB9GT Infineon Technologies Infineon-CYW20721_Enhanced_Low_Power_BR_EDR_BLE_Bluetooth_5.0_SOC_for_Audio-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7e7124d1017ebeab5c8a566e Description: IC RF TXRX+MCU BLE 134WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 134-BGA, WLCSP
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 448kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5.5dBm
Protocol: Bluetooth v5.1 + EDR
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 134-WLCSP (3.31x3.22)
GPIO: 40
Modulation: 4-DQPSK, 8-DPSK, GFSK, QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, I2S, PWM, SPI, UART
DigiKey Programmable: Not Verified
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CYW20721B2KUMLGT CYW20721B2KUMLGT Infineon Technologies Infineon-CYW20721_Enhanced_Low_Power_BR_EDR_BLE_Bluetooth_5.0_SOC_for_Audio-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7e7124d1017ebeab5c8a566e Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 448kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5.5dBm
Protocol: Bluetooth v5.1 + EDR
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 16
Modulation: 4-DQPSK, 8-DPSK, GFSK, QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, I2S, PWM, SPI, UART
DigiKey Programmable: Not Verified
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CYW20721B2KUMLGT CYW20721B2KUMLGT Infineon Technologies Infineon-CYW20721_Enhanced_Low_Power_BR_EDR_BLE_Bluetooth_5.0_SOC_for_Audio-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7e7124d1017ebeab5c8a566e Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Cut Tape (CT)
Package / Case: 40-UFQFN Exposed Pad
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 448kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5.5dBm
Protocol: Bluetooth v5.1 + EDR
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 16
Modulation: 4-DQPSK, 8-DPSK, GFSK, QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, I2S, PWM, SPI, UART
DigiKey Programmable: Not Verified
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GS61008P-MR
GS61008P-MR
Виробник: Infineon Technologies
Description: GS61008P-MR
Packaging: Cut Tape (CT)
Package / Case: 5-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
на замовлення 1110 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+675.00 грн
10+445.58 грн
100+420.35 грн
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S6J323CKSPSE20000 Infineon-S6J3200_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v18_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee0c1436670&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_int
S6J323CKSPSE20000
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2.0625MB 208TEQFP
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 46x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Number of I/O: 120
DigiKey Programmable: Not Verified
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S6J335EKSCSE2000A Infineon-S6J3350_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v13_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0edb378e5e0a
Виробник: Infineon Technologies
Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.16MB (4.16M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 16x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.2V
Connectivity: CANbus, CSIO, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Number of I/O: 208
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S6J335EKBESE20000 Infineon-S6J3350_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v13_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0edb378e5e0a
Виробник: Infineon Technologies
Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.16MB (4.16M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 16x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.2V
Connectivity: CANbus, CSIO, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Number of I/O: 208
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S6J335EKSESE20000 Infineon-S6J3350_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v13_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0edb378e5e0a
Виробник: Infineon Technologies
Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.16MB (4.16M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 16x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.2V
Connectivity: CANbus, CSIO, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Number of I/O: 208
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MB9EF226PMC-GSK5E2 Infineon-CY9EF226_Titan_CY9EF226_Series-AdditionalTechnicalInformation-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede63e2634d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
MB9EF226PMC-GSK5E2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 208K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-R4
Data Converters: A/D 50x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 117
DigiKey Programmable: Not Verified
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CY9EF226BPMC-GSE2 Infineon-CY9EF226_Titan_CY9EF226_Series-AdditionalTechnicalInformation-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede63e2634d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9EF226BPMC-GSE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 208K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 48K x 8
Core Processor: ARM® Cortex®-R4
Data Converters: A/D 50x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 117
DigiKey Programmable: Not Verified
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AUIRFR8405TRL auirfr8405.pdf?fileId=5546d462533600a4015355b6216514a5
AUIRFR8405TRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.98mOhm @ 90A, 10V
Power Dissipation (Max): 163W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5171 pF @ 25 V
Qualification: AEC-Q101
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AUIRFR8405TRL auirfr8405.pdf?fileId=5546d462533600a4015355b6216514a5
AUIRFR8405TRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 100A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.98mOhm @ 90A, 10V
Power Dissipation (Max): 163W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5171 pF @ 25 V
Qualification: AEC-Q101
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AUIRFS8405TRL auirfs8405.pdf?fileId=5546d462533600a4015355b7069d14de
AUIRFS8405TRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 163W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5193 pF @ 25 V
Qualification: AEC-Q101
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S26HS512TGABHI000 Infineon-AN200810_S25FL-P_(32_Mb_64_Mb)_Package_Routing_Guide-ApplicationNotes-v03_00-EN.pdf?fileId=8ac78c8c7cdc391c017d07432ba2664a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S26HS512TGABHI000
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 122 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+613.34 грн
10+548.58 грн
25+531.81 грн
50+487.17 грн
100+475.32 грн
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IRGP4266PBF IRGP4266%28-E%29PbF.pdf
IRGP4266PBF
Виробник: Infineon Technologies
Description: IGBT 650V 140A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 80ns/200ns
Switching Energy: 3.2mJ (on), 1.7mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 450 W
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BSP170IATMA1 448_BSP170I.pdf
BSP170IATMA1
Виробник: Infineon Technologies
Description: BSP170IATMA1
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.88A (Ta), 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.9A, 10V
Supplier Device Package: PG-SOT223-4-U01
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
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BSP170IATMA1 448_BSP170I.pdf
BSP170IATMA1
Виробник: Infineon Technologies
Description: BSP170IATMA1
Packaging: Cut Tape (CT)
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.88A (Ta), 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.9A, 10V
Supplier Device Package: PG-SOT223-4-U01
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
на замовлення 1961 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+51.80 грн
11+30.80 грн
100+19.79 грн
500+14.14 грн
1000+12.70 грн
Мінімальне замовлення: 7
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BSP171IATMA1 448_BSP171I.pdf
BSP171IATMA1
Виробник: Infineon Technologies
Description: BSP171IATMA1
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
Supplier Device Package: PG-SOT223-4-U01
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
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BSP171IATMA1 448_BSP171I.pdf
BSP171IATMA1
Виробник: Infineon Technologies
Description: BSP171IATMA1
Packaging: Cut Tape (CT)
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
Supplier Device Package: PG-SOT223-4-U01
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
на замовлення 2937 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+55.09 грн
10+32.94 грн
100+21.24 грн
500+15.21 грн
1000+13.69 грн
Мінімальне замовлення: 6
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4DIR2401HAXUMA1 Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxHA_family-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d01899cd5eb0a5610
4DIR2401HAXUMA1
Виробник: Infineon Technologies
Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 2/2
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 33ns, 33ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 3ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
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4DIR2401HAXUMA1 Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxHA_family-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d01899cd5eb0a5610
4DIR2401HAXUMA1
Виробник: Infineon Technologies
Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 2/2
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 33ns, 33ns
Isolated Power: No
Channel Type: Unidirectional
Pulse Width Distortion (Max): 3ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
на замовлення 1402 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+176.77 грн
10+122.56 грн
100+94.40 грн
500+76.95 грн
Мінімальне замовлення: 2
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TLE4268GXUMA2 Infineon-TLE4268-DS-v01_60-EN.pdf?fileId=5546d46259d9a4bf0159f967eb273e4d
TLE4268GXUMA2
Виробник: Infineon Technologies
Description: IC REG LIN 5V 150MA PG-DSO-20-35
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 450 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-20-35
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 20 mA
Qualification: AEC-Q100
на замовлення 28529 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
229+92.39 грн
Мінімальне замовлення: 229
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TD190N18SOFHPSA1 Infineon-TT190N18SOF-DS-v03_01-EN.pdf?fileId=5546d4625cc9456a015d06e57a387eed
TD190N18SOFHPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 275A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 145 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 190 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 275 A
Voltage - Off State: 1.8 kV
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3865.00 грн
В кошику  од. на суму  грн.
TD280N18SOFHPSA1 Infineon-TT280N18SOF-DS-v03_01-EN.pdf?fileId=5546d4625cc9456a015d06e50ebf7edb
TD280N18SOFHPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 520A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 280 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 1.8 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6774.65 грн
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TD61N16KOFAHPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 120A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 76 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.6 kV
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CYT2B93CACQ0AZEGST Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c
CYT2B93CACQ0AZEGST
Виробник: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 45x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 49
DigiKey Programmable: Not Verified
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CY7C1525KV18-300BZC CY7C1510%2C2%2C4%2C25KV18.pdf
CY7C1525KV18-300BZC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 8M x 9
DigiKey Programmable: Not Verified
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CY8CLED08-48PVXI CY8CLED08.pdf
CY8CLED08-48PVXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: HB LED Controller
Core Processor: M8C
Supplier Device Package: 48-SSOP
Number of I/O: 44
DigiKey Programmable: Not Verified
на замовлення 448 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1028.53 грн
10+781.66 грн
30+720.67 грн
120+625.24 грн
270+603.38 грн
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IRGS10B60KDTRLP IRG%28B%2CS%2CSL%2910B60KDPbF.pdf
IRGS10B60KDTRLP
Виробник: Infineon Technologies
Description: IGBT NPT 600V 22A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 30ns/230ns
Switching Energy: 140µJ (on), 250µJ (off)
Test Condition: 400V, 10A, 47Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 44 A
Power - Max: 156 W
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+108.44 грн
Мінімальне замовлення: 10
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CYT4BBBCEBQ1BZSGST Infineon-TRAVEO_T2G_CYT3BB_4BB-DataSheet-v09_00-EN.pdf?fileId=5546d4627883d7e00178a73ba6ad1732
CYT4BBBCEBQ1BZSGST
Виробник: Infineon Technologies
Description: TRAVEO-2 BODY HIGH-END
Packaging: Tape & Reel (TR)
Package / Case: 272-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 72x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 272-BGA (16x16)
Grade: Automotive
Number of I/O: 207
Qualification: AEC-Q100
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CY2XP24ZXI CY2XP24.pdf
CY2XP24ZXI
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVPECL
Frequency - Max: 187.5MHz
Type: Clock Generator
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 8-TSSOP
PLL: Yes
Divider/Multiplier: Yes/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 261 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+861.63 грн
10+651.82 грн
25+607.31 грн
162+511.80 грн
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FM25V02A-DGQTR Infineon-FM25V02A_256_Kbit_(32K_8)_Serial_(SPI)_F_RAM_with_Extended_Temperature-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8f7554166&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integrati
FM25V02A-DGQTR
Виробник: Infineon Technologies
Description: IC FRAM 256KBIT SPI 40MHZ 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (4x4.5)
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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IRSM505-044PA IRSM505-044_IRSM515-044_Series.pdf
IRSM505-044PA
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 3A 23SOP
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 800mOhm
Applications: AC Motors
Current - Output / Channel: 3A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-SOP
Fault Protection: UVLO
Load Type: Inductive
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CY8C23533-24LQXI Infineon-CY8C23533-24LQXI-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6c7463d3b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C23533-24LQXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 8x14b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 26
DigiKey Programmable: Not Verified
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DF17MR12W1M1HFB86BPSA1 Infineon-DF17MR12W1M1HF_B68-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c85ecb34701867865ac783d9f
Виробник: Infineon Technologies
Description: EASY STANDARD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 3 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V
Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 18V
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 20mA
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IRS2308PBF irs2308.pdf?fileId=5546d462533600a40153567a98ac2804
IRS2308PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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2ED3140MC12LXUMA1 Infineon-2ED314xMC12L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a019058e3ec3a2da2
2ED3140MC12LXUMA1
Виробник: Infineon Technologies
Description: 2ED3140MC12LXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
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2ED3140MC12LXUMA1 Infineon-2ED314xMC12L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a019058e3ec3a2da2
2ED3140MC12LXUMA1
Виробник: Infineon Technologies
Description: 2ED3140MC12LXUMA1
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
на замовлення 1138 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+156.21 грн
10+110.92 грн
25+101.18 грн
100+84.87 грн
250+80.07 грн
500+77.17 грн
Мінімальне замовлення: 3
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IPT60R120CM8XTMA1
IPT60R120CM8XTMA1
Виробник: Infineon Technologies
Description: IPT60R120CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.3A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 200µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1045 pF @ 400 V
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IPT60R120CM8XTMA1
IPT60R120CM8XTMA1
Виробник: Infineon Technologies
Description: IPT60R120CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.3A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 200µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1045 pF @ 400 V
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IPT60R099CM8XTMA1 DS_IPT60R099CM8_2_0.pdf
IPT60R099CM8XTMA1
Виробник: Infineon Technologies
Description: IPT60R099CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.1A, 10V
Power Dissipation (Max): 186W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 260µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
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IPT60R099CM8XTMA1 DS_IPT60R099CM8_2_0.pdf
IPT60R099CM8XTMA1
Виробник: Infineon Technologies
Description: IPT60R099CM8XTMA1
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.1A, 10V
Power Dissipation (Max): 186W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 260µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
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CY62146GSL-45ZSXI Infineon-Complete_freedom_from_soft_errors-ProductBrochure-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f64de115077&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: Infineon Technologies
Description: IC SRAM 4MB 45NS 44TSOPII
Packaging: Tray
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GS-065-030-2-L-MR
GS-065-030-2-L-MR
Виробник: Infineon Technologies
Description: GS-065-030-2-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
250+412.66 грн
Мінімальне замовлення: 250
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GS-065-030-2-L-MR
GS-065-030-2-L-MR
Виробник: Infineon Technologies
Description: GS-065-030-2-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
на замовлення 567 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+852.59 грн
10+606.53 грн
100+563.46 грн
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S25FL128SDPMFV001 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SDPMFV001
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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EVAL3KWDBPFCC72TOBO1
EVAL3KWDBPFCC72TOBO1
Виробник: Infineon Technologies
Description: 3000W DUAL LLC EVAL
Packaging: Bulk
Function: Wireless Power Supply/Charging
Type: Power Management
Contents: Board(s)
Primary Attributes: PFC
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TD500N16KOFTIMHPSA1 Infineon-TT500N-DS-v03_04-EN.pdf?fileId=db3a30434486a89301448d34d0f7790d
TD500N16KOFTIMHPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 900A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.8 kV
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CY22150FZXCT download
CY22150FZXCT
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 200MHz
Type: Clock Generator, Fanout Distribution
Input: LVCMOS, LVTTL, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Verified
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CY22150FZXCT download
CY22150FZXCT
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 200MHz
Type: Clock Generator, Fanout Distribution
Input: LVCMOS, LVTTL, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Verified
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IAUCN04S7N006TATMA1
Виробник: Infineon Technologies
Description: IAUCN04S7N006TATMA1
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 205W (Tc)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10040 pF @ 20 V
Qualification: AEC-Q101
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IAUCN04S7N006TATMA1
Виробник: Infineon Technologies
Description: IAUCN04S7N006TATMA1
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 205W (Tc)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10040 pF @ 20 V
Qualification: AEC-Q101
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IMZC120R012M2HXKSA1 IMZC120R012M2HXKSA1.pdf
IMZC120R012M2HXKSA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 129A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 57A, 18V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 17.8mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 800 V
на замовлення 1003 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1659.13 грн
30+1020.84 грн
120+980.49 грн
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DD600N16KXPSA1 Infineon-DD600N-DS-v03_02-EN.pdf?fileId=db3a304412b407950112b42fbcc44d54
DD600N16KXPSA1
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1600V BGPB60E2A1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 600A
Supplier Device Package: BG-PB60E2A-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1.8 kA
Current - Reverse Leakage @ Vr: 40 mA @ 1600 V
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IRS21064PBF INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw
IRS21064PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
123+176.38 грн
Мінімальне замовлення: 123
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IRS21064PBF INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw
IRS21064PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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S99FL512SAGMFI010
Виробник: Infineon Technologies
Description: IC FLASH
Packaging: Bulk
Memory Format: FLASH
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IR4426PBF description ir4426.pdf?fileId=5546d462533600a4015355d60b491822
IR4426PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
на замовлення 21734 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
157+134.70 грн
Мінімальне замовлення: 157
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IR4426PBF description ir4426.pdf?fileId=5546d462533600a4015355d60b491822
IR4426PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
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CY8C4125LQE-S433 Infineon-CY8C41xx_Automotive_PSoC_4_PSoC_4100S_family_based_on_Arm_Cortex_-M0_CPU-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee64c786e7a
CY8C4125LQE-S433
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 40UFQFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
CYW20721B2KWB9GT Infineon-CYW20721_Enhanced_Low_Power_BR_EDR_BLE_Bluetooth_5.0_SOC_for_Audio-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7e7124d1017ebeab5c8a566e
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 134WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 134-BGA, WLCSP
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 448kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5.5dBm
Protocol: Bluetooth v5.1 + EDR
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 134-WLCSP (3.31x3.22)
GPIO: 40
Modulation: 4-DQPSK, 8-DPSK, GFSK, QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, I2S, PWM, SPI, UART
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CYW20721B2KUMLGT Infineon-CYW20721_Enhanced_Low_Power_BR_EDR_BLE_Bluetooth_5.0_SOC_for_Audio-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7e7124d1017ebeab5c8a566e
CYW20721B2KUMLGT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 448kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5.5dBm
Protocol: Bluetooth v5.1 + EDR
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 16
Modulation: 4-DQPSK, 8-DPSK, GFSK, QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, I2S, PWM, SPI, UART
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CYW20721B2KUMLGT Infineon-CYW20721_Enhanced_Low_Power_BR_EDR_BLE_Bluetooth_5.0_SOC_for_Audio-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7e7124d1017ebeab5c8a566e
CYW20721B2KUMLGT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Cut Tape (CT)
Package / Case: 40-UFQFN Exposed Pad
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 448kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5.5dBm
Protocol: Bluetooth v5.1 + EDR
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 16
Modulation: 4-DQPSK, 8-DPSK, GFSK, QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, I2S, PWM, SPI, UART
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
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