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IGLD65R140D2AUMA1 IGLD65R140D2AUMA1 Infineon Technologies Description: GAN HV
Packaging: Cut Tape (CT)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-LSON-8-1
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V
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IGOT65R055D2AUMA1 IGOT65R055D2AUMA1 Infineon Technologies IGOT65R055D2AUMA1.pdf Description: IGOT65R055D2AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
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IGOT65R055D2AUMA1 IGOT65R055D2AUMA1 Infineon Technologies IGOT65R055D2AUMA1.pdf Description: IGOT65R055D2AUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
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DEMOBOARDTLD1124ELTOBO1 DEMOBOARDTLD1124ELTOBO1 Infineon Technologies Description: EVAL BOARD FOR TLD1124EL
Packaging: Bulk
Voltage - Output: 40V
Voltage - Input: 5.5V ~ 40V
Contents: Board(s)
Current - Output / Channel: 360mA
Utilized IC / Part: TLD1124EL
Outputs and Type: 1 Non-Isolated Output
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+10432.27 грн
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IRS2453DSPBF IRS2453DSPBF Infineon Technologies irs2453d.pdf?fileId=5546d462533600a40153567ac42f2814 description Description: IC GATE DRVR FULL-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Full-Bridge
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 4.7V, 9.3V
Current - Peak Output (Source, Sink): 180mA, 260mA
DigiKey Programmable: Not Verified
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S25FL512SAGMFBG13 S25FL512SAGMFBG13 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY8C21534-24PVXI CY8C21534-24PVXI Infineon Technologies Infineon-CY8C21634_CY8C21534_CY8C21434_CY8C21334_CY8C21234_PSoC_Programmable_System-on-Chip-DataSheet-v36_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd82ef47ed&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_a Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Verified
на замовлення 909 шт:
термін постачання 21-31 дні (днів)
1+381.99 грн
10+282.16 грн
47+249.08 грн
141+226.27 грн
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IRGB4060DPBF IRGB4060DPBF Infineon Technologies IRSDS09068-1.pdf?t.download=true&u=5oefqw description Description: IGBT
Packaging: Bulk
на замовлення 91200 шт:
термін постачання 21-31 дні (днів)
237+96.36 грн
Мінімальне замовлення: 237
В кошику  од. на суму  грн.
S29PL032J70BFI073 S29PL032J70BFI073 Infineon Technologies Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0 Description: IC FLASH 32MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-VFBGA (8.15x6.15)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 16
DigiKey Programmable: Not Verified
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S29PL032J70BFI073 S29PL032J70BFI073 Infineon Technologies Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0 Description: IC FLASH 32MBIT PARALLEL 48FBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-VFBGA (8.15x6.15)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 16
DigiKey Programmable: Not Verified
на замовлення 2332 шт:
термін постачання 21-31 дні (днів)
1+415.41 грн
10+371.83 грн
25+360.67 грн
50+330.52 грн
100+322.59 грн
250+312.19 грн
500+299.43 грн
1000+291.89 грн
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CY62136EV30LL-45ZSXI CY62136EV30LL-45ZSXI Infineon Technologies Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239 Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
на замовлення 480 шт:
термін постачання 21-31 дні (днів)
2+298.43 грн
10+267.91 грн
25+260.00 грн
40+240.17 грн
135+230.25 грн
270+224.64 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY62136FV30LL-45ZSXIT CY62136FV30LL-45ZSXIT Infineon Technologies Infineon-CY62136FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef2bb32ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
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CY62136FV30LL-45ZSXIT CY62136FV30LL-45ZSXIT Infineon Technologies Infineon-CY62136FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef2bb32ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
на замовлення 710 шт:
термін постачання 21-31 дні (днів)
2+286.49 грн
10+257.72 грн
25+250.04 грн
50+229.22 грн
100+223.80 грн
250+216.66 грн
500+207.85 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY62136EV30LL-45BVXIT CY62136EV30LL-45BVXIT Infineon Technologies Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239 Description: IC SRAM 2MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+231.03 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
CY62136EV30LL-45BVXIT CY62136EV30LL-45BVXIT Infineon Technologies Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239 Description: IC SRAM 2MBIT PARALLEL 48VFBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
на замовлення 2350 шт:
термін постачання 21-31 дні (днів)
2+298.43 грн
10+267.91 грн
25+260.00 грн
50+238.35 грн
100+232.70 грн
250+225.27 грн
500+216.10 грн
1000+210.69 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY62136FV30LL-55ZSXE CY62136FV30LL-55ZSXE Infineon Technologies Infineon-CY62136FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef2bb32ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
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AUIRFB4410 AUIRFB4410 Infineon Technologies auirfb4410.pdf?fileId=5546d462533600a4015355b10be41421 Description: MOSFET N-CH 100V 75A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 58A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V
Qualification: AEC-Q101
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
100+99.83 грн
Мінімальне замовлення: 100
В кошику  од. на суму  грн.
IRFH7932TRPBF IRFH7932TRPBF Infineon Technologies irfh7932pbf.pdf?fileId=5546d462533600a40153561f59df1f02 description Description: MOSFET N-CH 30V 24A/104A PQFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Power Dissipation (Max): 3.4W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 15 V
на замовлення 4084 шт:
термін постачання 21-31 дні (днів)
595+37.94 грн
Мінімальне замовлення: 595
В кошику  од. на суму  грн.
IRFH8337TRPBF IRFH8337TRPBF Infineon Technologies IRFH8337TR2PbF.pdf Description: MOSFET N-CH 30V 12A/35A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.2W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 10 V
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IRFH8337TRPBF IRFH8337TRPBF Infineon Technologies IRFH8337TR2PbF.pdf Description: MOSFET N-CH 30V 12A/35A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.2W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 10 V
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IRFH4234TRPBF IRFH4234TRPBF Infineon Technologies irfh4234pbf.pdf?fileId=5546d462533600a40153561a75581e8a Description: MOSFET N-CH 25V 22A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 30A
Power Dissipation (Max): 3.5W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1011 pF @ 13 V
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IRFH4234TRPBF IRFH4234TRPBF Infineon Technologies irfh4234pbf.pdf?fileId=5546d462533600a40153561a75581e8a Description: MOSFET N-CH 25V 22A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 30A
Power Dissipation (Max): 3.5W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1011 pF @ 13 V
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AUIRFN7107TR AUIRFN7107TR Infineon Technologies auirfn7107.pdf?fileId=5546d462533600a4015355b15a931436 Description: MOSFET N-CH 75V 14A/75A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V
Power Dissipation (Max): 4.4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PQFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3001 pF @ 25 V
Qualification: AEC-Q101
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AUIRFN7107TR AUIRFN7107TR Infineon Technologies auirfn7107.pdf?fileId=5546d462533600a4015355b15a931436 Description: MOSFET N-CH 75V 14A/75A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V
Power Dissipation (Max): 4.4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PQFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3001 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
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IRF3717TRPBF IRF3717TRPBF Infineon Technologies IRF3717PbF.pdf Description: MOSFET N-CH 20V 20A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF3717TRPBF IRF3717TRPBF Infineon Technologies IRF3717PbF.pdf Description: MOSFET N-CH 20V 20A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 10 V
товару немає в наявності
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IPAN70R600P7SXKSA1 IPAN70R600P7SXKSA1 Infineon Technologies Infineon-IPAN70R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015ad1bc3b8a21b8 Description: MOSFET N-CH 700V 8.5A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V
Power Dissipation (Max): 24.9W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
100+31.11 грн
Мінімальне замовлення: 100
В кошику  од. на суму  грн.
TLE4973RE35D5S0010XUMA1 TLE4973RE35D5S0010XUMA1 Infineon Technologies Infineon-TLE4973-RE35x5-S0010-DataSheet-v02_10-EN.pdf?fileId=8ac78c8c8b6555fe018bd3a9afe7609b Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
товару немає в наявності
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TLE4973RE35D5S0010XUMA1 TLE4973RE35D5S0010XUMA1 Infineon Technologies Infineon-TLE4973-RE35x5-S0010-DataSheet-v02_10-EN.pdf?fileId=8ac78c8c8b6555fe018bd3a9afe7609b Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
на замовлення 2298 шт:
термін постачання 21-31 дні (днів)
2+288.08 грн
5+248.45 грн
10+237.56 грн
25+210.78 грн
50+202.48 грн
100+194.87 грн
500+176.62 грн
1000+171.01 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE4973RE35D5S0001XUMA1 TLE4973RE35D5S0001XUMA1 Infineon Technologies Infineon-TLE4973_xE35x5_S0001_current_sensors-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8929aa4d018988b389ce50f6 Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
товару немає в наявності
В кошику  од. на суму  грн.
TLE4973RE35D5S0001XUMA1 TLE4973RE35D5S0001XUMA1 Infineon Technologies Infineon-TLE4973_xE35x5_S0001_current_sensors-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8929aa4d018988b389ce50f6 Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
на замовлення 1987 шт:
термін постачання 21-31 дні (днів)
2+288.08 грн
5+248.45 грн
10+237.56 грн
25+210.78 грн
50+202.48 грн
100+194.87 грн
500+176.62 грн
1000+171.01 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRG4BC20UDSTRRP IRG4BC20UDSTRRP Infineon Technologies irg4bc20ud-spbf.pdf?fileId=5546d462533600a40153563f7f112267 Description: IGBT 600V 13A 60W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 39ns/93ns
Switching Energy: 160µJ (on), 130µJ (off)
Test Condition: 480V, 6.5A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 60 W
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AIMBG120R030M1XTMA1 AIMBG120R030M1XTMA1 Infineon Technologies 448_AIMBG120R.pdf Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+682.51 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
AIMBG120R030M1XTMA1 AIMBG120R030M1XTMA1 Infineon Technologies 448_AIMBG120R.pdf Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
на замовлення 1580 шт:
термін постачання 21-31 дні (днів)
1+1261.36 грн
10+861.97 грн
100+738.27 грн
В кошику  од. на суму  грн.
IMBG120R034M2HXTMA1 IMBG120R034M2HXTMA1 Infineon Technologies Infineon-IMBG120R034M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191c2210f0527b0 Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
IMBG120R034M2HXTMA1 IMBG120R034M2HXTMA1 Infineon Technologies Infineon-IMBG120R034M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191c2210f0527b0 Description: SIC DISCRETE
Packaging: Cut Tape (CT)
на замовлення 980 шт:
термін постачання 21-31 дні (днів)
1+812.52 грн
10+586.48 грн
100+535.23 грн
500+359.14 грн
В кошику  од. на суму  грн.
IMBG120R181M2HXTMA1 IMBG120R181M2HXTMA1 Infineon Technologies Infineon-IMBG120R181M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d22004bd820dc Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Rds On (Max) @ Id, Vgs: 181.4mOhm @ 3.9A, 18V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.2mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
товару немає в наявності
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IMBG120R181M2HXTMA1 IMBG120R181M2HXTMA1 Infineon Technologies Infineon-IMBG120R181M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d22004bd820dc Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Rds On (Max) @ Id, Vgs: 181.4mOhm @ 3.9A, 18V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.2mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
1+416.21 грн
10+267.37 грн
В кошику  од. на суму  грн.
TLE5046SICAKLRHALA1 TLE5046SICAKLRHALA1 Infineon Technologies Description: SPEED SENS
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Output Type: Current
Type: Magnetoresistive
Operating Temperature: -40°C ~ 190°C
Voltage - Supply: 5.2V ~ 20V
Must Operate: 2mT
Actuator Material: Magnet
Grade: Automotive
Frequency: 3 kHz
Qualification: AEC-Q100
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TDB6HK95N16LOFHOSA1 TDB6HK95N16LOFHOSA1 Infineon Technologies Infineon-TXXB6XX95N16XX-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a0b84bf754a33 Description: SCR MODULE 1.6KV 75A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Bridge, 3-Phase - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 720A @ 50Hz
Number of SCRs, Diodes: 6 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 75 A
Voltage - Off State: 1.6 kV
товару немає в наявності
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IPU80R2K4P7AKMA1 IPU80R2K4P7AKMA1 Infineon Technologies Infineon-IPU80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cedc9e56d1185 Description: MOSFET N-CH 800V 2.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
на замовлення 1339 шт:
термін постачання 21-31 дні (днів)
868+25.69 грн
Мінімальне замовлення: 868
В кошику  од. на суму  грн.
IRF100PW219XKSA1 IRF100PW219XKSA1 Infineon Technologies Infineon-IRF100PW219-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c93dda25b0194d11e9f761e44 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
товару немає в наявності
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IGI60F270A1LAUMA1 IGI60F270A1LAUMA1 Infineon Technologies Description: IC HALF BRIDGE DRIVER 21TIQFN
Packaging: Tape & Reel (TR)
Package / Case: 21-TQFN Exposed Pad
Mounting Type: Surface Mount
Output Configuration: Half Bridge
Rds On (Typ): 270mOhm
Applications: General Purpose
Supplier Device Package: PG-TIQFN-21-1
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IRF3709PBF IRF3709PBF Infineon Technologies irf3709pbf.pdf?fileId=5546d462533600a4015355df8536193f Description: MOSFET N-CH 30V 90A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
на замовлення 2241 шт:
термін постачання 21-31 дні (днів)
400+55.05 грн
Мінімальне замовлення: 400
В кошику  од. на суму  грн.
IRF3709PBF IRF3709PBF Infineon Technologies irf3709pbf.pdf?fileId=5546d462533600a4015355df8536193f Description: MOSFET N-CH 30V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
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CG9059AM Infineon Technologies Description: IC MEMORY
Packaging: Bulk
DigiKey Programmable: Not Verified
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FS01MR12A8MA2BHPSA1 FS01MR12A8MA2BHPSA1 Infineon Technologies Description: FS01MR12A8MA2BHPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 500A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 750V
Rds On (Max) @ Id, Vgs: 1.87mOhm @ 18V, 500A
Vgs(th) (Max) @ Id: 4.55V @ 240mA
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+150349.14 грн
В кошику  од. на суму  грн.
CY9AF004BGL-GMJK7E1 CY9AF004BGL-GMJK7E1 Infineon Technologies Description: IC MCU
Packaging: Tray
DigiKey Programmable: Not Verified
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SRK1000 Infineon Technologies srk1000.pdf Description: SRK1Synrectffbaconverter
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
674+34.14 грн
Мінімальне замовлення: 674
В кошику  од. на суму  грн.
IRG4BC30UPBF IRG4BC30UPBF Infineon Technologies irg4bc30upbf.pdf?fileId=5546d462533600a40153564005ad2289 description Description: IGBT 600V 23A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
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FS300R12OE4PNOSA1 FS300R12OE4PNOSA1 Infineon Technologies Infineon-FS300R12OE4P-DS-v02_00-EN.pdf?fileId=5546d4625d5945ed015d5ff1ab4a53be Description: IGBT MOD 1200V 600A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+23731.04 грн
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AN983X-AH-T-21 AN983X-AH-T-21 Infineon Technologies fundamentals-of-power-semiconductors Description: IC PCI TO ETHERNET LAN 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Voltage - Supply: 3V ~ 3.6V
Supplier Device Package: PG-PQFP-128
DigiKey Programmable: Not Verified
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IRF7403TR IRF7403TR Infineon Technologies irf7403pbf.pdf?fileId=5546d462533600a4015355fa23541b9c Description: MOSFET N-CH 30V 8.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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IPP033N03LF2SAKSA1 IPP033N03LF2SAKSA1 Infineon Technologies Infineon-IPP033N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d1019030cc6d352b2a Description: MOSFET N-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
5+78.79 грн
10+63.07 грн
100+48.17 грн
500+35.98 грн
Мінімальне замовлення: 5
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IR3843AMTRPBF IR3843AMTRPBF Infineon Technologies ir3843am.pdf?fileId=5546d462533600a4015355d557e217ea Description: IC REG BUCK ADJ 3A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.32MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.9V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
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IPP80N08S2L07AKSA1 IPP80N08S2L07AKSA1 Infineon Technologies Infineon-IPP_B80N08S2L_07_GREEN-DS-v01_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426e2333ae3&ack=t Description: MOSFET N-CH 75V 80A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Qualification: AEC-Q101
на замовлення 91 шт:
термін постачання 21-31 дні (днів)
91+182.85 грн
Мінімальне замовлення: 91
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IRF200B211 IRF200B211 Infineon Technologies irf200b211.pdf?fileId=5546d462533600a4015355db4d5418d4 Description: MOSFET N-CH 200V 12A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 7.2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
на замовлення 6346 шт:
термін постачання 21-31 дні (днів)
468+48.56 грн
Мінімальне замовлення: 468
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IPB065N03LGATMA1 IPB065N03LGATMA1 Infineon Technologies IP%28B%2CP%29065N03LG.pdf Description: MOSFET N-CH 30V 50A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
на замовлення 333 шт:
термін постачання 21-31 дні (днів)
333+33.03 грн
Мінімальне замовлення: 333
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KT210 KT210 Infineon Technologies KT%2CKTY.pdf Description: SENSOR PTC 1KOHM 3% TO92MINI
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: TO-92MINI
Resistance @ 25°C: 1 kOhms
на замовлення 73800 шт:
термін постачання 21-31 дні (днів)
611+37.18 грн
Мінімальне замовлення: 611
В кошику  од. на суму  грн.
TLF35585QUS01XUMA2 TLF35585QUS01XUMA2 Infineon Technologies Infineon-TLF35585QUS01-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186bd5fc0e8505d Description: OPTIREG PMIC
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Applications: Automotive
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
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IGLD65R140D2AUMA1
IGLD65R140D2AUMA1
Виробник: Infineon Technologies
Description: GAN HV
Packaging: Cut Tape (CT)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-LSON-8-1
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V
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IGOT65R055D2AUMA1 IGOT65R055D2AUMA1.pdf
IGOT65R055D2AUMA1
Виробник: Infineon Technologies
Description: IGOT65R055D2AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
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IGOT65R055D2AUMA1 IGOT65R055D2AUMA1.pdf
IGOT65R055D2AUMA1
Виробник: Infineon Technologies
Description: IGOT65R055D2AUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
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DEMOBOARDTLD1124ELTOBO1
DEMOBOARDTLD1124ELTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLD1124EL
Packaging: Bulk
Voltage - Output: 40V
Voltage - Input: 5.5V ~ 40V
Contents: Board(s)
Current - Output / Channel: 360mA
Utilized IC / Part: TLD1124EL
Outputs and Type: 1 Non-Isolated Output
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+10432.27 грн
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IRS2453DSPBF description irs2453d.pdf?fileId=5546d462533600a40153567ac42f2814
IRS2453DSPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR FULL-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Full-Bridge
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 4.7V, 9.3V
Current - Peak Output (Source, Sink): 180mA, 260mA
DigiKey Programmable: Not Verified
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S25FL512SAGMFBG13 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL512SAGMFBG13
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY8C21534-24PVXI Infineon-CY8C21634_CY8C21534_CY8C21434_CY8C21334_CY8C21234_PSoC_Programmable_System-on-Chip-DataSheet-v36_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd82ef47ed&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_a
CY8C21534-24PVXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Verified
на замовлення 909 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+381.99 грн
10+282.16 грн
47+249.08 грн
141+226.27 грн
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IRGB4060DPBF description IRSDS09068-1.pdf?t.download=true&u=5oefqw
IRGB4060DPBF
Виробник: Infineon Technologies
Description: IGBT
Packaging: Bulk
на замовлення 91200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
237+96.36 грн
Мінімальне замовлення: 237
В кошику  од. на суму  грн.
S29PL032J70BFI073 Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0
S29PL032J70BFI073
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-VFBGA (8.15x6.15)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 16
DigiKey Programmable: Not Verified
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S29PL032J70BFI073 Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0
S29PL032J70BFI073
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT PARALLEL 48FBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-VFBGA (8.15x6.15)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 16
DigiKey Programmable: Not Verified
на замовлення 2332 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+415.41 грн
10+371.83 грн
25+360.67 грн
50+330.52 грн
100+322.59 грн
250+312.19 грн
500+299.43 грн
1000+291.89 грн
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CY62136EV30LL-45ZSXI Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239
CY62136EV30LL-45ZSXI
Виробник: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
на замовлення 480 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+298.43 грн
10+267.91 грн
25+260.00 грн
40+240.17 грн
135+230.25 грн
270+224.64 грн
Мінімальне замовлення: 2
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CY62136FV30LL-45ZSXIT Infineon-CY62136FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef2bb32ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62136FV30LL-45ZSXIT
Виробник: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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CY62136FV30LL-45ZSXIT Infineon-CY62136FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef2bb32ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62136FV30LL-45ZSXIT
Виробник: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
на замовлення 710 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+286.49 грн
10+257.72 грн
25+250.04 грн
50+229.22 грн
100+223.80 грн
250+216.66 грн
500+207.85 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY62136EV30LL-45BVXIT Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239
CY62136EV30LL-45BVXIT
Виробник: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+231.03 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
CY62136EV30LL-45BVXIT Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239
CY62136EV30LL-45BVXIT
Виробник: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 48VFBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
на замовлення 2350 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+298.43 грн
10+267.91 грн
25+260.00 грн
50+238.35 грн
100+232.70 грн
250+225.27 грн
500+216.10 грн
1000+210.69 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY62136FV30LL-55ZSXE Infineon-CY62136FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef2bb32ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62136FV30LL-55ZSXE
Виробник: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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AUIRFB4410 auirfb4410.pdf?fileId=5546d462533600a4015355b10be41421
AUIRFB4410
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 75A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 58A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V
Qualification: AEC-Q101
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
100+99.83 грн
Мінімальне замовлення: 100
В кошику  од. на суму  грн.
IRFH7932TRPBF description irfh7932pbf.pdf?fileId=5546d462533600a40153561f59df1f02
IRFH7932TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 24A/104A PQFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Power Dissipation (Max): 3.4W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 15 V
на замовлення 4084 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
595+37.94 грн
Мінімальне замовлення: 595
В кошику  од. на суму  грн.
IRFH8337TRPBF IRFH8337TR2PbF.pdf
IRFH8337TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A/35A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.2W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH8337TRPBF IRFH8337TR2PbF.pdf
IRFH8337TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A/35A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.2W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 10 V
товару немає в наявності
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IRFH4234TRPBF irfh4234pbf.pdf?fileId=5546d462533600a40153561a75581e8a
IRFH4234TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 22A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 30A
Power Dissipation (Max): 3.5W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1011 pF @ 13 V
товару немає в наявності
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IRFH4234TRPBF irfh4234pbf.pdf?fileId=5546d462533600a40153561a75581e8a
IRFH4234TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 22A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 30A
Power Dissipation (Max): 3.5W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1011 pF @ 13 V
товару немає в наявності
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AUIRFN7107TR auirfn7107.pdf?fileId=5546d462533600a4015355b15a931436
AUIRFN7107TR
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 14A/75A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V
Power Dissipation (Max): 4.4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PQFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3001 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
AUIRFN7107TR auirfn7107.pdf?fileId=5546d462533600a4015355b15a931436
AUIRFN7107TR
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 14A/75A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V
Power Dissipation (Max): 4.4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PQFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3001 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
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IRF3717TRPBF IRF3717PbF.pdf
IRF3717TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 20A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF3717TRPBF IRF3717PbF.pdf
IRF3717TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 20A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 10 V
товару немає в наявності
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IPAN70R600P7SXKSA1 Infineon-IPAN70R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015ad1bc3b8a21b8
IPAN70R600P7SXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 8.5A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V
Power Dissipation (Max): 24.9W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
100+31.11 грн
Мінімальне замовлення: 100
В кошику  од. на суму  грн.
TLE4973RE35D5S0010XUMA1 Infineon-TLE4973-RE35x5-S0010-DataSheet-v02_10-EN.pdf?fileId=8ac78c8c8b6555fe018bd3a9afe7609b
TLE4973RE35D5S0010XUMA1
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
товару немає в наявності
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TLE4973RE35D5S0010XUMA1 Infineon-TLE4973-RE35x5-S0010-DataSheet-v02_10-EN.pdf?fileId=8ac78c8c8b6555fe018bd3a9afe7609b
TLE4973RE35D5S0010XUMA1
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
на замовлення 2298 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+288.08 грн
5+248.45 грн
10+237.56 грн
25+210.78 грн
50+202.48 грн
100+194.87 грн
500+176.62 грн
1000+171.01 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE4973RE35D5S0001XUMA1 Infineon-TLE4973_xE35x5_S0001_current_sensors-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8929aa4d018988b389ce50f6
TLE4973RE35D5S0001XUMA1
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
товару немає в наявності
В кошику  од. на суму  грн.
TLE4973RE35D5S0001XUMA1 Infineon-TLE4973_xE35x5_S0001_current_sensors-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8929aa4d018988b389ce50f6
TLE4973RE35D5S0001XUMA1
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
на замовлення 1987 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+288.08 грн
5+248.45 грн
10+237.56 грн
25+210.78 грн
50+202.48 грн
100+194.87 грн
500+176.62 грн
1000+171.01 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRG4BC20UDSTRRP irg4bc20ud-spbf.pdf?fileId=5546d462533600a40153563f7f112267
IRG4BC20UDSTRRP
Виробник: Infineon Technologies
Description: IGBT 600V 13A 60W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 39ns/93ns
Switching Energy: 160µJ (on), 130µJ (off)
Test Condition: 480V, 6.5A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 60 W
товару немає в наявності
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AIMBG120R030M1XTMA1 448_AIMBG120R.pdf
AIMBG120R030M1XTMA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+682.51 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
AIMBG120R030M1XTMA1 448_AIMBG120R.pdf
AIMBG120R030M1XTMA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
на замовлення 1580 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1261.36 грн
10+861.97 грн
100+738.27 грн
В кошику  од. на суму  грн.
IMBG120R034M2HXTMA1 Infineon-IMBG120R034M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191c2210f0527b0
IMBG120R034M2HXTMA1
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
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IMBG120R034M2HXTMA1 Infineon-IMBG120R034M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191c2210f0527b0
IMBG120R034M2HXTMA1
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Cut Tape (CT)
на замовлення 980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+812.52 грн
10+586.48 грн
100+535.23 грн
500+359.14 грн
В кошику  од. на суму  грн.
IMBG120R181M2HXTMA1 Infineon-IMBG120R181M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d22004bd820dc
IMBG120R181M2HXTMA1
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Rds On (Max) @ Id, Vgs: 181.4mOhm @ 3.9A, 18V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.2mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
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IMBG120R181M2HXTMA1 Infineon-IMBG120R181M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d22004bd820dc
IMBG120R181M2HXTMA1
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Rds On (Max) @ Id, Vgs: 181.4mOhm @ 3.9A, 18V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.2mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+416.21 грн
10+267.37 грн
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TLE5046SICAKLRHALA1
TLE5046SICAKLRHALA1
Виробник: Infineon Technologies
Description: SPEED SENS
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Output Type: Current
Type: Magnetoresistive
Operating Temperature: -40°C ~ 190°C
Voltage - Supply: 5.2V ~ 20V
Must Operate: 2mT
Actuator Material: Magnet
Grade: Automotive
Frequency: 3 kHz
Qualification: AEC-Q100
товару немає в наявності
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TDB6HK95N16LOFHOSA1 Infineon-TXXB6XX95N16XX-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a0b84bf754a33
TDB6HK95N16LOFHOSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 75A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Bridge, 3-Phase - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 720A @ 50Hz
Number of SCRs, Diodes: 6 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 75 A
Voltage - Off State: 1.6 kV
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IPU80R2K4P7AKMA1 Infineon-IPU80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cedc9e56d1185
IPU80R2K4P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 2.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
на замовлення 1339 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
868+25.69 грн
Мінімальне замовлення: 868
В кошику  од. на суму  грн.
IRF100PW219XKSA1 Infineon-IRF100PW219-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c93dda25b0194d11e9f761e44
IRF100PW219XKSA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
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IGI60F270A1LAUMA1
IGI60F270A1LAUMA1
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 21TIQFN
Packaging: Tape & Reel (TR)
Package / Case: 21-TQFN Exposed Pad
Mounting Type: Surface Mount
Output Configuration: Half Bridge
Rds On (Typ): 270mOhm
Applications: General Purpose
Supplier Device Package: PG-TIQFN-21-1
товару немає в наявності
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IRF3709PBF irf3709pbf.pdf?fileId=5546d462533600a4015355df8536193f
IRF3709PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 90A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
на замовлення 2241 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
400+55.05 грн
Мінімальне замовлення: 400
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IRF3709PBF irf3709pbf.pdf?fileId=5546d462533600a4015355df8536193f
IRF3709PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
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CG9059AM
Виробник: Infineon Technologies
Description: IC MEMORY
Packaging: Bulk
DigiKey Programmable: Not Verified
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FS01MR12A8MA2BHPSA1
FS01MR12A8MA2BHPSA1
Виробник: Infineon Technologies
Description: FS01MR12A8MA2BHPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 500A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 750V
Rds On (Max) @ Id, Vgs: 1.87mOhm @ 18V, 500A
Vgs(th) (Max) @ Id: 4.55V @ 240mA
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+150349.14 грн
В кошику  од. на суму  грн.
CY9AF004BGL-GMJK7E1
CY9AF004BGL-GMJK7E1
Виробник: Infineon Technologies
Description: IC MCU
Packaging: Tray
DigiKey Programmable: Not Verified
товару немає в наявності
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SRK1000 srk1000.pdf
Виробник: Infineon Technologies
Description: SRK1Synrectffbaconverter
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
674+34.14 грн
Мінімальне замовлення: 674
В кошику  од. на суму  грн.
IRG4BC30UPBF description irg4bc30upbf.pdf?fileId=5546d462533600a40153564005ad2289
IRG4BC30UPBF
Виробник: Infineon Technologies
Description: IGBT 600V 23A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
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FS300R12OE4PNOSA1 Infineon-FS300R12OE4P-DS-v02_00-EN.pdf?fileId=5546d4625d5945ed015d5ff1ab4a53be
FS300R12OE4PNOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 600A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+23731.04 грн
В кошику  од. на суму  грн.
AN983X-AH-T-21 fundamentals-of-power-semiconductors
AN983X-AH-T-21
Виробник: Infineon Technologies
Description: IC PCI TO ETHERNET LAN 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Voltage - Supply: 3V ~ 3.6V
Supplier Device Package: PG-PQFP-128
DigiKey Programmable: Not Verified
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IRF7403TR irf7403pbf.pdf?fileId=5546d462533600a4015355fa23541b9c
IRF7403TR
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 8.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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IPP033N03LF2SAKSA1 Infineon-IPP033N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d1019030cc6d352b2a
IPP033N03LF2SAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+78.79 грн
10+63.07 грн
100+48.17 грн
500+35.98 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IR3843AMTRPBF ir3843am.pdf?fileId=5546d462533600a4015355d557e217ea
IR3843AMTRPBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 3A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.32MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.9V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
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IPP80N08S2L07AKSA1 Infineon-IPP_B80N08S2L_07_GREEN-DS-v01_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426e2333ae3&ack=t
IPP80N08S2L07AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 80A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Qualification: AEC-Q101
на замовлення 91 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
91+182.85 грн
Мінімальне замовлення: 91
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IRF200B211 irf200b211.pdf?fileId=5546d462533600a4015355db4d5418d4
IRF200B211
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 12A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 7.2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
на замовлення 6346 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
468+48.56 грн
Мінімальне замовлення: 468
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IPB065N03LGATMA1 IP%28B%2CP%29065N03LG.pdf
IPB065N03LGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
на замовлення 333 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
333+33.03 грн
Мінімальне замовлення: 333
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KT210 KT%2CKTY.pdf
KT210
Виробник: Infineon Technologies
Description: SENSOR PTC 1KOHM 3% TO92MINI
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: TO-92MINI
Resistance @ 25°C: 1 kOhms
на замовлення 73800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
611+37.18 грн
Мінімальне замовлення: 611
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TLF35585QUS01XUMA2 Infineon-TLF35585QUS01-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186bd5fc0e8505d
TLF35585QUS01XUMA2
Виробник: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Applications: Automotive
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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