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XC2268N40F80LRABKXUMA1 XC2268N40F80LRABKXUMA1 Infineon Technologies XC226xN.pdf Description: IC MCU 16/32B 320KB FLSH 100LQFP
Program Memory Size: 320KB (320K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 76
Supplier Device Package: PG-LQFP-100-8
Peripherals: I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 16x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 42K x 8
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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XC2267M104F80LRABKXUMA1 XC2267M104F80LRABKXUMA1 Infineon Technologies XC226xM.pdf Description: IC MCU 16/32B 832KB FLSH 100LQFP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 76
Supplier Device Package: PG-LQFP-100-8
Peripherals: I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 16x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 50K x 8
Program Memory Size: 832KB (832K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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XC2263N40F40LAAKXUMA1 XC2263N40F40LAAKXUMA1 Infineon Technologies XC226xN.pdf Description: IC MCU 16/32B 320KB FLSH 100LQFP
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 42K x 8
Program Memory Size: 320KB (320K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 76
Supplier Device Package: PG-LQFP-100-8
Peripherals: I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 16x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
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CY7C2268KV18-450BZC CY7C2268KV18-450BZC Infineon Technologies Infineon-CY7C2268KV18_CY7C2270KV18_36-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec197363665 Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
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CY7C2265KV18-450BZC CY7C2265KV18-450BZC Infineon Technologies Infineon-CY7C2263KV18_CY7C2265KV18_36-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec18d15365b Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C2265KV18-550BZC CY7C2265KV18-550BZC Infineon Technologies Infineon-CY7C2263KV18_CY7C2265KV18_36-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec18d15365b Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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IFX54441EJVXUMA1 IFX54441EJVXUMA1 Infineon Technologies INFNS30254-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR POS ADJ 8DSO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 1.22V
Control Features: Enable
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.4V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 12 mA
на замовлення 130 шт:
термін постачання 21-31 дні (днів)
130+153.46 грн
Мінімальне замовлення: 130 шт
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IRF3709ZPBF IRF3709ZPBF Infineon Technologies IRF3709Z%28S%2CL%29PbF.pdf Description: MOSFET N-CH 30V 87A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V
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CY8CTMA140-48LQI-01 CY8CTMA140-48LQI-01 Infineon Technologies CY8CTMA140.pdf Description: IC TRUETOUCH CAPSENSE 48QFN
Packaging: Tray
DigiKey Programmable: Not Verified
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CY8CTMA140-LQI-01 CY8CTMA140-LQI-01 Infineon Technologies CY8CTMA140.pdf Description: IC TRUETOUCH CAPSENSE 36QFN
Packaging: Tray
DigiKey Programmable: Not Verified
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CY8CTMA140-LQI-09 CY8CTMA140-LQI-09 Infineon Technologies CY8CTMA140.pdf Description: IC TRUETOUCH CAPSENSE 36QFN
Packaging: Tray
DigiKey Programmable: Not Verified
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IRSM836-024MATR IRSM836-024MATR Infineon Technologies 2156_InfineonIRSM836024MADSv0101EN.pdf Description: CIPOS NANO
Packaging: Bulk
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
72+278.35 грн
Мінімальне замовлення: 72 шт
В кошику  од. на суму  грн.
TLV49681TBXALA1 TLV49681TBXALA1 Infineon Technologies Infineon-Infineon-TLV4968-1TAB_Hall_Switch-DS-v01_00-DS-v01_00-EN.pdf?fileId=5546d4624e765da5014ede5efa240c43 Description: MAG SWITCH IC HALL EFF 3TO92
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Short Body, Formed Leads
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 26V
Technology: Hall Effect
Sensing Range: 2mT Trip, -2mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Test Condition: 25°C
на замовлення 1990 шт:
термін постачання 21-31 дні (днів)
9+35.65 грн
10+29.85 грн
11+28.28 грн
25+24.76 грн
50+23.53 грн
100+22.42 грн
500+19.84 грн
1000+19.02 грн
Мінімальне замовлення: 9 шт
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TLV49681TBXALA1 TLV49681TBXALA1 Infineon Technologies Infineon-Infineon-TLV4968-1TAB_Hall_Switch-DS-v01_00-DS-v01_00-EN.pdf?fileId=5546d4624e765da5014ede5efa240c43 Description: MAG SWITCH IC HALL EFF 3TO92
Features: Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body, Formed Leads
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 26V
Technology: Hall Effect
Sensing Range: 2mT Trip, -2mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Test Condition: 25°C
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
CY9AF131KAPMC-G-105-UNE2 CY9AF131KAPMC-G-105-UNE2 Infineon Technologies Description: IC MCU 32BIT 64KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 6x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CSIO, I2C, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 37
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
S29GL256S10TFV020 S29GL256S10TFV020 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 182 шт
В кошику  од. на суму  грн.
IRF9395MTRPBF IRF9395MTRPBF Infineon Technologies irf9395mpbf.pdf?fileId=5546d462533600a40153561198461db7 Description: MOSFET 2P-CH 30V 14A DIRECTFETMC
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MC
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14A
Input Capacitance (Ciss) (Max) @ Vds: 3241pF @ 15V
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 50µA
Supplier Device Package: DIRECTFET™ MC
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ISC016N04NM7VATMA1 ISC016N04NM7VATMA1 Infineon Technologies 448_ISC016N04NM7V.pdf Description: ISC016N04NM7VATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 1.49mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 35µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
ISC016N04NM7VATMA1 ISC016N04NM7VATMA1 Infineon Technologies 448_ISC016N04NM7V.pdf Description: ISC016N04NM7VATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 1.49mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 35µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
на замовлення 4685 шт:
термін постачання 21-31 дні (днів)
3+106.94 грн
10+65.22 грн
100+43.52 грн
500+32.11 грн
1000+29.30 грн
2000+28.50 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
KITFX2G3104LGATOBO1 Infineon Technologies Description: IC MCU USB PERIPH HS 56VFBGA
Embedded: No
Contents: Board(s)
Type: Interface
Function: USB Controller
Packaging: Tray
товару немає в наявності
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IRL1404ZPBF IRL1404ZPBF Infineon Technologies irl1404zpbf.pdf?fileId=5546d462533600a40153565b4b2d24f5 Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
товару немає в наявності
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IMLT65R050M2HXTMA1 IMLT65R050M2HXTMA1 Infineon Technologies infineon-imlt65r050m2h-datasheet-en.pdf Description: SICFET N-CH 650V 47A HDSOP-16
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 18.2A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
товару немає в наявності
 Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
IMLT65R050M2HXTMA1 IMLT65R050M2HXTMA1 Infineon Technologies infineon-imlt65r050m2h-datasheet-en.pdf Description: SICFET N-CH 650V 47A HDSOP-16
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 18.2A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
на замовлення 1215 шт:
термін постачання 21-31 дні (днів)
1+550.18 грн
10+359.07 грн
100+262.52 грн
500+239.30 грн
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IPTC068N20NM6ATMA1 IPTC068N20NM6ATMA1 Infineon Technologies Infineon-IPTC068N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019626da9150613e Description: IPTC068N20NM6ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 126A, 15V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 251µA
Supplier Device Package: PG-HDSOP-16-U04
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1800+246.83 грн
Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
IPTC068N20NM6ATMA1 IPTC068N20NM6ATMA1 Infineon Technologies Infineon-IPTC068N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019626da9150613e Description: IPTC068N20NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 126A, 15V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 251µA
Supplier Device Package: PG-HDSOP-16-U04
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
на замовлення 2755 шт:
термін постачання 21-31 дні (днів)
1+607.53 грн
10+398.77 грн
100+293.37 грн
500+273.03 грн
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EVALM1IM06B50TOBO1 EVALM1IM06B50TOBO1 Infineon Technologies infineon-eval-m1-im06b50-usermanual-en.pdf Description: EVALM1IM06B50TOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IM06B50GC1
Embedded: No
товару немає в наявності
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IQDH88N06LM5CGSCATMA1 IQDH88N06LM5CGSCATMA1 Infineon Technologies Infineon-IQDH88N06LM5CGSC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b6a49ff05e8f Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
товару немає в наявності
 Мінімальне замовлення: 5000 шт
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IQDH88N06LM5CGSCATMA1 IQDH88N06LM5CGSCATMA1 Infineon Technologies Infineon-IQDH88N06LM5CGSC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b6a49ff05e8f Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
на замовлення 4200 шт:
термін постачання 21-31 дні (днів)
1+354.91 грн
10+227.82 грн
100+163.14 грн
500+147.86 грн
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IQDH88N06LM5SCATMA1 IQDH88N06LM5SCATMA1 Infineon Technologies IQDH88N06LM5SCATMA1.pdf Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
IQDH88N06LM5SCATMA1 IQDH88N06LM5SCATMA1 Infineon Technologies IQDH88N06LM5SCATMA1.pdf Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
на замовлення 4793 шт:
термін постачання 21-31 дні (днів)
1+362.66 грн
10+233.12 грн
100+167.17 грн
500+152.27 грн
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IQFH68N06NM5ATMA1 IQFH68N06NM5ATMA1 Infineon Technologies Infineon-IQFH68N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e447a580640 Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 460A (Tc)
Rds On (Max) @ Id, Vgs: 0.68mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 273W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 217µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 30 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IQFH68N06NM5ATMA1 IQFH68N06NM5ATMA1 Infineon Technologies Infineon-IQFH68N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e447a580640 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 460A (Tc)
Rds On (Max) @ Id, Vgs: 0.68mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 273W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 217µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 30 V
на замовлення 209 шт:
термін постачання 21-31 дні (днів)
1+482.77 грн
10+312.96 грн
100+226.92 грн
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IRF60DM206 IRF60DM206 Infineon Technologies irf60dm206.pdf?fileId=5546d462533600a4015355e433aa19ca Description: MOSFET N-CH 60V 130A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric ME
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: DirectFET™ Isometric ME
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6530 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 4800 шт
В кошику  од. на суму  грн.
IRF60DM206 IRF60DM206 Infineon Technologies irf60dm206.pdf?fileId=5546d462533600a4015355e433aa19ca Description: MOSFET N-CH 60V 130A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric ME
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: DirectFET™ Isometric ME
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6530 pF @ 25 V
товару немає в наявності
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SLB9673XU20FW2624XTMA1 SLB9673XU20FW2624XTMA1 Infineon Technologies infineon-slb9673-tpm20-i2c-fw26xx-ds-rev1-4-2024-11-13-datasheet-en.pdf Description: SLB9673XU20FW2624XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
SLB9673XU20FW2624XTMA1 SLB9673XU20FW2624XTMA1 Infineon Technologies infineon-slb9673-tpm20-i2c-fw26xx-ds-rev1-4-2024-11-13-datasheet-en.pdf Description: SLB9673XU20FW2624XTMA1
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
товару немає в наявності
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SLB9673AU20FW2624XTMA1 SLB9673AU20FW2624XTMA1 Infineon Technologies infineon-slb9673-tpm20-i2c-fw26xx-ds-rev1-4-2024-11-13-datasheet-en.pdf Description: SLB9673AU20FW2624XTMA1
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
на замовлення 1326 шт:
термін постачання 21-31 дні (днів)
1+415.35 грн
10+305.12 грн
25+281.44 грн
100+239.67 грн
250+228.01 грн
500+220.99 грн
1000+211.68 грн
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CYT4DNJBHCQ1BZSGS CYT4DNJBHCQ1BZSGS Infineon Technologies Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0 Description: TRAVEO-2 CLUST.2.5DGRAPH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 640K x 8
Program Memory Size: 6.19MB (6.19M x 8)
Speed: 100MHz, 320MHz
Mounting Type: Surface Mount
Package / Case: 327-LFBGA
Packaging: Tray
Number of I/O: 168
Supplier Device Package: 327-FBGA (17x17)
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR
товару немає в наявності
 Мінімальне замовлення: 900 шт
В кошику  од. на суму  грн.
CYT4DNJBLCQ1BZSGS CYT4DNJBLCQ1BZSGS Infineon Technologies Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0 Description: TRAVEO-2 CLUST.2.5DGRAPH
Mounting Type: Surface Mount
Package / Case: 327-LFBGA
Packaging: Tray
Number of I/O: 168
Supplier Device Package: 327-FBGA (17x17)
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 640K x 8
Program Memory Size: 6.19MB (6.19M x 8)
Speed: 100MHz, 320MHz
товару немає в наявності
 Мінімальне замовлення: 900 шт
В кошику  од. на суму  грн.
IMT65R020M2HXUMA1 IMT65R020M2HXUMA1 Infineon Technologies Infineon-IMT65R020M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e05df523c49 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IMT65R020M2HXUMA1 IMT65R020M2HXUMA1 Infineon Technologies Infineon-IMT65R020M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e05df523c49 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
на замовлення 735 шт:
термін постачання 21-31 дні (днів)
1+891.14 грн
10+598.46 грн
100+485.50 грн
В кошику  од. на суму  грн.
F410MR20W3M1HB11BPSA1 F410MR20W3M1HB11BPSA1 Infineon Technologies F410MR20W3M1HB11BPSA1.pdf Description: EASY STANDARD PLUS
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 95A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 1200V
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 120A, 18V
Gate Charge (Qg) (Max) @ Vgs: 470nC @ 3V
Vgs(th) (Max) @ Id: 5.15V @ 68mA
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
1+20895.38 грн
16+18719.59 грн
В кошику  од. на суму  грн.
CHL8214-01CRT CHL8214-01CRT Infineon Technologies CHL8203_12_13_14_PB_v1.6_8-28-13.pdf Description: IC REG BUCK 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: 0°C ~ 85°C
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-40-903
Synchronous Rectifier: No
Control Features: Enable
Serial Interfaces: I2C
Output Phases: 4
Clock Sync: No
Number of Outputs: 5
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CY7C1061GE-10BVXI CY7C1061GE-10BVXI Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 960 шт
В кошику  од. на суму  грн.
T501N65TOHXPSA1 Infineon Technologies Description: SCR MODULE 7KV 1000A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 890 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 1000 A
Voltage - Off State: 7 kV
товару немає в наявності
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IGLR65R140D2XUMA1 IGLR65R140D2XUMA1 Infineon Technologies infineon-iglr65r140d2-datasheet-en.pdf Description: GANFET N-CH 650V 13A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 3.1A
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 400 V
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
IGLR65R140D2XUMA1 IGLR65R140D2XUMA1 Infineon Technologies infineon-iglr65r140d2-datasheet-en.pdf Description: GANFET N-CH 650V 13A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 3.1A
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 400 V
на замовлення 4131 шт:
термін постачання 21-31 дні (днів)
2+256.49 грн
10+161.78 грн
100+113.10 грн
500+87.02 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IGT65R140D2ATMA1 IGT65R140D2ATMA1 Infineon Technologies Infineon-IGT65R140D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a5ea2f70a2b Description: IGT65R140D2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-HSOF-8-3
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 400 V
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IGT65R140D2ATMA1 IGT65R140D2ATMA1 Infineon Technologies Infineon-IGT65R140D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a5ea2f70a2b Description: IGT65R140D2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-HSOF-8-3
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 400 V
на замовлення 1791 шт:
термін постачання 21-31 дні (днів)
2+247.97 грн
10+156.18 грн
100+109.45 грн
500+90.96 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
CY14ME064J2-SXQ CY14ME064J2-SXQ Infineon Technologies Infineon-CY14MB064J_CY14ME064J_64_Kbit_8Kx8_Serial_I2C_nvSRAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f206d70b83db2 Description: IC NVSRAM 64KBIT I2C 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: I2C
Supplier Device Package: 8-SOIC
Memory Format: NVSRAM
Clock Frequency: 3.4 MHz
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 970 шт
В кошику  од. на суму  грн.
FF600R17ME4PBOSA1 FF600R17ME4PBOSA1 Infineon Technologies Infineon-FF600R17ME4P-DS-v03_00-EN.pdf?fileId=5546d4625d5945ed015d5fc3c0f55350 Description: IGBT MODULE 1700V 600A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 48 nF @ 25 V
на замовлення 36 шт:
термін постачання 21-31 дні (днів)
1+17519.11 грн
В кошику  од. на суму  грн.
ETT630N18P60XPSA1 ETT630N18P60XPSA1 Infineon Technologies Infineon-ETT630N18P60-DataSheet-v03_01-EN.pdf?fileId=5546d46278d64ffd017931ecaa3c3c8f Description: SCR MODULE 1.8KV 700A MODULE
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 628 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 20000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 135°C (TC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
товару немає в наявності
 Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
CY95F633HPMC-G-UNE2 CY95F633HPMC-G-UNE2 Infineon Technologies infineon-cy95630h-series-new-8fx-8-bit-microcontrollers-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0edd859f61fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration Description: IC MCU 8BIT 12KB 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 28
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
CY95F633HPMC-G-UNERE2 CY95F633HPMC-G-UNERE2 Infineon Technologies Infineon-CY95630H_Series_New_8FX_8-bit_Microcontrollers-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd859f61fe Description: IC MM MCU 32LQFP
Packaging: Tape & Reel (TR)
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 28
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
CY95F633HPMC-G-UNERE2 CY95F633HPMC-G-UNERE2 Infineon Technologies Infineon-CY95630H_Series_New_8FX_8-bit_Microcontrollers-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd859f61fe Description: IC MM MCU 32LQFP
Packaging: Cut Tape (CT)
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 28
DigiKey Programmable: Not Verified
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S25FL256LAGMFB001 S25FL256LAGMFB001 Infineon Technologies INFN-S-A0017271261-1.pdf Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Memory Interface: SPI - Quad I/O, QPI
Grade: Automotive
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 133 MHz
товару немає в наявності
 Мінімальне замовлення: 705 шт
В кошику  од. на суму  грн.
S25FL256LAGMFB000 S25FL256LAGMFB000 Infineon Technologies INFN-S-A0017271261-1.pdf Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tray
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Memory Interface: SPI - Quad I/O, QPI
Grade: Automotive
товару немає в наявності
 Мінімальне замовлення: 240 шт
В кошику  од. на суму  грн.
CY91F526DWEPMC-GSE2 CY91F526DWEPMC-GSE2 Infineon Technologies Description: IC MCU 32BT 1.0625MB FLSH 80LQFP
DigiKey Programmable: Not Verified
Number of I/O: 56
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 32x12b SAR; D/A 1x8b
Core Processor: FR81S
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 136K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
товару немає в наявності
 Мінімальне замовлення: 1190 шт
В кошику  од. на суму  грн.
CY91F526FSCPMC-GSE1 CY91F526FSCPMC-GSE1 Infineon Technologies Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Description: IC MCU 32B 1.0625MB FLSH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 76
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 37x12b; D/A 2x8b
Core Processor: FR81S
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 136K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
товару немає в наявності
 Мінімальне замовлення: 900 шт
В кошику  од. на суму  грн.
CY91F526FSCPMC-GSE2 CY91F526FSCPMC-GSE2 Infineon Technologies Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Description: IC MCU 32B 1.0625MB FLSH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 76
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 37x12b; D/A 2x8b
Core Processor: FR81S
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 136K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
товару немає в наявності
 Мінімальне замовлення: 900 шт
В кошику  од. на суму  грн.
XC2268N40F80LRABKXUMA1 XC226xN.pdf
XC2268N40F80LRABKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16/32B 320KB FLSH 100LQFP
Program Memory Size: 320KB (320K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 76
Supplier Device Package: PG-LQFP-100-8
Peripherals: I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 16x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 42K x 8
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
XC2267M104F80LRABKXUMA1 XC226xM.pdf
XC2267M104F80LRABKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16/32B 832KB FLSH 100LQFP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 76
Supplier Device Package: PG-LQFP-100-8
Peripherals: I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 16x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 50K x 8
Program Memory Size: 832KB (832K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
XC2263N40F40LAAKXUMA1 XC226xN.pdf
XC2263N40F40LAAKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16/32B 320KB FLSH 100LQFP
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 42K x 8
Program Memory Size: 320KB (320K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 76
Supplier Device Package: PG-LQFP-100-8
Peripherals: I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 16x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
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CY7C2268KV18-450BZC Infineon-CY7C2268KV18_CY7C2270KV18_36-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec197363665
CY7C2268KV18-450BZC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
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CY7C2265KV18-450BZC Infineon-CY7C2263KV18_CY7C2265KV18_36-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec18d15365b
CY7C2265KV18-450BZC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C2265KV18-550BZC Infineon-CY7C2263KV18_CY7C2265KV18_36-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec18d15365b
CY7C2265KV18-550BZC
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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IFX54441EJVXUMA1 INFNS30254-1.pdf?t.download=true&u=5oefqw
IFX54441EJVXUMA1
Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 8DSO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 1.22V
Control Features: Enable
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.4V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 12 mA
на замовлення 130 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
130+153.46 грн
Мінімальне замовлення: 130 шт
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IRF3709ZPBF IRF3709Z%28S%2CL%29PbF.pdf
IRF3709ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 87A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 21A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V
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CY8CTMA140-48LQI-01 CY8CTMA140.pdf
CY8CTMA140-48LQI-01
Виробник: Infineon Technologies
Description: IC TRUETOUCH CAPSENSE 48QFN
Packaging: Tray
DigiKey Programmable: Not Verified
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CY8CTMA140-LQI-01 CY8CTMA140.pdf
CY8CTMA140-LQI-01
Виробник: Infineon Technologies
Description: IC TRUETOUCH CAPSENSE 36QFN
Packaging: Tray
DigiKey Programmable: Not Verified
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CY8CTMA140-LQI-09 CY8CTMA140.pdf
CY8CTMA140-LQI-09
Виробник: Infineon Technologies
Description: IC TRUETOUCH CAPSENSE 36QFN
Packaging: Tray
DigiKey Programmable: Not Verified
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IRSM836-024MATR 2156_InfineonIRSM836024MADSv0101EN.pdf
IRSM836-024MATR
Виробник: Infineon Technologies
Description: CIPOS NANO
Packaging: Bulk
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
72+278.35 грн
Мінімальне замовлення: 72 шт
В кошику  од. на суму  грн.
TLV49681TBXALA1 Infineon-Infineon-TLV4968-1TAB_Hall_Switch-DS-v01_00-DS-v01_00-EN.pdf?fileId=5546d4624e765da5014ede5efa240c43
TLV49681TBXALA1
Виробник: Infineon Technologies
Description: MAG SWITCH IC HALL EFF 3TO92
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Short Body, Formed Leads
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 26V
Technology: Hall Effect
Sensing Range: 2mT Trip, -2mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Test Condition: 25°C
на замовлення 1990 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
9+35.65 грн
10+29.85 грн
11+28.28 грн
25+24.76 грн
50+23.53 грн
100+22.42 грн
500+19.84 грн
1000+19.02 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
TLV49681TBXALA1 Infineon-Infineon-TLV4968-1TAB_Hall_Switch-DS-v01_00-DS-v01_00-EN.pdf?fileId=5546d4624e765da5014ede5efa240c43
TLV49681TBXALA1
Виробник: Infineon Technologies
Description: MAG SWITCH IC HALL EFF 3TO92
Features: Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body, Formed Leads
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 26V
Technology: Hall Effect
Sensing Range: 2mT Trip, -2mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Test Condition: 25°C
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
CY9AF131KAPMC-G-105-UNE2
CY9AF131KAPMC-G-105-UNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 6x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CSIO, I2C, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 37
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
S29GL256S10TFV020 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL256S10TFV020
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 182 шт
В кошику  од. на суму  грн.
IRF9395MTRPBF irf9395mpbf.pdf?fileId=5546d462533600a40153561198461db7
IRF9395MTRPBF
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 30V 14A DIRECTFETMC
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MC
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14A
Input Capacitance (Ciss) (Max) @ Vds: 3241pF @ 15V
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 50µA
Supplier Device Package: DIRECTFET™ MC
товару немає в наявності
В кошику  од. на суму  грн.
ISC016N04NM7VATMA1 448_ISC016N04NM7V.pdf
ISC016N04NM7VATMA1
Виробник: Infineon Technologies
Description: ISC016N04NM7VATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 1.49mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 35µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
ISC016N04NM7VATMA1 448_ISC016N04NM7V.pdf
ISC016N04NM7VATMA1
Виробник: Infineon Technologies
Description: ISC016N04NM7VATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 1.49mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 35µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
на замовлення 4685 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+106.94 грн
10+65.22 грн
100+43.52 грн
500+32.11 грн
1000+29.30 грн
2000+28.50 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
KITFX2G3104LGATOBO1
Виробник: Infineon Technologies
Description: IC MCU USB PERIPH HS 56VFBGA
Embedded: No
Contents: Board(s)
Type: Interface
Function: USB Controller
Packaging: Tray
товару немає в наявності
В кошику  од. на суму  грн.
IRL1404ZPBF irl1404zpbf.pdf?fileId=5546d462533600a40153565b4b2d24f5
IRL1404ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IMLT65R050M2HXTMA1 infineon-imlt65r050m2h-datasheet-en.pdf
IMLT65R050M2HXTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 650V 47A HDSOP-16
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 18.2A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
IMLT65R050M2HXTMA1 infineon-imlt65r050m2h-datasheet-en.pdf
IMLT65R050M2HXTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 650V 47A HDSOP-16
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 18.2A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
на замовлення 1215 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+550.18 грн
10+359.07 грн
100+262.52 грн
500+239.30 грн
В кошику  од. на суму  грн.
IPTC068N20NM6ATMA1 Infineon-IPTC068N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019626da9150613e
IPTC068N20NM6ATMA1
Виробник: Infineon Technologies
Description: IPTC068N20NM6ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 126A, 15V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 251µA
Supplier Device Package: PG-HDSOP-16-U04
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1800+246.83 грн
Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
IPTC068N20NM6ATMA1 Infineon-IPTC068N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019626da9150613e
IPTC068N20NM6ATMA1
Виробник: Infineon Technologies
Description: IPTC068N20NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 126A, 15V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 251µA
Supplier Device Package: PG-HDSOP-16-U04
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
на замовлення 2755 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+607.53 грн
10+398.77 грн
100+293.37 грн
500+273.03 грн
В кошику  од. на суму  грн.
EVALM1IM06B50TOBO1 infineon-eval-m1-im06b50-usermanual-en.pdf
EVALM1IM06B50TOBO1
Виробник: Infineon Technologies
Description: EVALM1IM06B50TOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IM06B50GC1
Embedded: No
товару немає в наявності
В кошику  од. на суму  грн.
IQDH88N06LM5CGSCATMA1 Infineon-IQDH88N06LM5CGSC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b6a49ff05e8f
IQDH88N06LM5CGSCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
IQDH88N06LM5CGSCATMA1 Infineon-IQDH88N06LM5CGSC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b6a49ff05e8f
IQDH88N06LM5CGSCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
на замовлення 4200 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+354.91 грн
10+227.82 грн
100+163.14 грн
500+147.86 грн
В кошику  од. на суму  грн.
IQDH88N06LM5SCATMA1 IQDH88N06LM5SCATMA1.pdf
IQDH88N06LM5SCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
IQDH88N06LM5SCATMA1 IQDH88N06LM5SCATMA1.pdf
IQDH88N06LM5SCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
на замовлення 4793 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+362.66 грн
10+233.12 грн
100+167.17 грн
500+152.27 грн
В кошику  од. на суму  грн.
IQFH68N06NM5ATMA1 Infineon-IQFH68N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e447a580640
IQFH68N06NM5ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 460A (Tc)
Rds On (Max) @ Id, Vgs: 0.68mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 273W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 217µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IQFH68N06NM5ATMA1 Infineon-IQFH68N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e447a580640
IQFH68N06NM5ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 460A (Tc)
Rds On (Max) @ Id, Vgs: 0.68mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 273W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 217µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 30 V
на замовлення 209 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+482.77 грн
10+312.96 грн
100+226.92 грн
В кошику  од. на суму  грн.
IRF60DM206 irf60dm206.pdf?fileId=5546d462533600a4015355e433aa19ca
IRF60DM206
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 130A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric ME
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: DirectFET™ Isometric ME
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6530 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 4800 шт
В кошику  од. на суму  грн.
IRF60DM206 irf60dm206.pdf?fileId=5546d462533600a4015355e433aa19ca
IRF60DM206
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 130A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric ME
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: DirectFET™ Isometric ME
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6530 pF @ 25 V
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SLB9673XU20FW2624XTMA1 infineon-slb9673-tpm20-i2c-fw26xx-ds-rev1-4-2024-11-13-datasheet-en.pdf
SLB9673XU20FW2624XTMA1
Виробник: Infineon Technologies
Description: SLB9673XU20FW2624XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
SLB9673XU20FW2624XTMA1 infineon-slb9673-tpm20-i2c-fw26xx-ds-rev1-4-2024-11-13-datasheet-en.pdf
SLB9673XU20FW2624XTMA1
Виробник: Infineon Technologies
Description: SLB9673XU20FW2624XTMA1
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
товару немає в наявності
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SLB9673AU20FW2624XTMA1 infineon-slb9673-tpm20-i2c-fw26xx-ds-rev1-4-2024-11-13-datasheet-en.pdf
SLB9673AU20FW2624XTMA1
Виробник: Infineon Technologies
Description: SLB9673AU20FW2624XTMA1
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
на замовлення 1326 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+415.35 грн
10+305.12 грн
25+281.44 грн
100+239.67 грн
250+228.01 грн
500+220.99 грн
1000+211.68 грн
В кошику  од. на суму  грн.
CYT4DNJBHCQ1BZSGS Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0
CYT4DNJBHCQ1BZSGS
Виробник: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 640K x 8
Program Memory Size: 6.19MB (6.19M x 8)
Speed: 100MHz, 320MHz
Mounting Type: Surface Mount
Package / Case: 327-LFBGA
Packaging: Tray
Number of I/O: 168
Supplier Device Package: 327-FBGA (17x17)
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR
товару немає в наявності
Мінімальне замовлення: 900 шт
В кошику  од. на суму  грн.
CYT4DNJBLCQ1BZSGS Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0
CYT4DNJBLCQ1BZSGS
Виробник: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Mounting Type: Surface Mount
Package / Case: 327-LFBGA
Packaging: Tray
Number of I/O: 168
Supplier Device Package: 327-FBGA (17x17)
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 640K x 8
Program Memory Size: 6.19MB (6.19M x 8)
Speed: 100MHz, 320MHz
товару немає в наявності
Мінімальне замовлення: 900 шт
В кошику  од. на суму  грн.
IMT65R020M2HXUMA1 Infineon-IMT65R020M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e05df523c49
IMT65R020M2HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IMT65R020M2HXUMA1 Infineon-IMT65R020M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e05df523c49
IMT65R020M2HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
на замовлення 735 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+891.14 грн
10+598.46 грн
100+485.50 грн
В кошику  од. на суму  грн.
F410MR20W3M1HB11BPSA1 F410MR20W3M1HB11BPSA1.pdf
F410MR20W3M1HB11BPSA1
Виробник: Infineon Technologies
Description: EASY STANDARD PLUS
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 95A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 1200V
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 120A, 18V
Gate Charge (Qg) (Max) @ Vgs: 470nC @ 3V
Vgs(th) (Max) @ Id: 5.15V @ 68mA
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+20895.38 грн
16+18719.59 грн
В кошику  од. на суму  грн.
CHL8214-01CRT CHL8203_12_13_14_PB_v1.6_8-28-13.pdf
CHL8214-01CRT
Виробник: Infineon Technologies
Description: IC REG BUCK 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: 0°C ~ 85°C
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-40-903
Synchronous Rectifier: No
Control Features: Enable
Serial Interfaces: I2C
Output Phases: 4
Clock Sync: No
Number of Outputs: 5
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CY7C1061GE-10BVXI Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1061GE-10BVXI
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 960 шт
В кошику  од. на суму  грн.
T501N65TOHXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 7KV 1000A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 890 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 1000 A
Voltage - Off State: 7 kV
товару немає в наявності
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IGLR65R140D2XUMA1 infineon-iglr65r140d2-datasheet-en.pdf
IGLR65R140D2XUMA1
Виробник: Infineon Technologies
Description: GANFET N-CH 650V 13A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 3.1A
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
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IGLR65R140D2XUMA1 infineon-iglr65r140d2-datasheet-en.pdf
IGLR65R140D2XUMA1
Виробник: Infineon Technologies
Description: GANFET N-CH 650V 13A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 3.1A
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 400 V
на замовлення 4131 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+256.49 грн
10+161.78 грн
100+113.10 грн
500+87.02 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IGT65R140D2ATMA1 Infineon-IGT65R140D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a5ea2f70a2b
IGT65R140D2ATMA1
Виробник: Infineon Technologies
Description: IGT65R140D2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-HSOF-8-3
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IGT65R140D2ATMA1 Infineon-IGT65R140D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a5ea2f70a2b
IGT65R140D2ATMA1
Виробник: Infineon Technologies
Description: IGT65R140D2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-HSOF-8-3
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 400 V
на замовлення 1791 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+247.97 грн
10+156.18 грн
100+109.45 грн
500+90.96 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
CY14ME064J2-SXQ Infineon-CY14MB064J_CY14ME064J_64_Kbit_8Kx8_Serial_I2C_nvSRAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f206d70b83db2
CY14ME064J2-SXQ
Виробник: Infineon Technologies
Description: IC NVSRAM 64KBIT I2C 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: I2C
Supplier Device Package: 8-SOIC
Memory Format: NVSRAM
Clock Frequency: 3.4 MHz
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 970 шт
В кошику  од. на суму  грн.
FF600R17ME4PBOSA1 Infineon-FF600R17ME4P-DS-v03_00-EN.pdf?fileId=5546d4625d5945ed015d5fc3c0f55350
FF600R17ME4PBOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 600A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 48 nF @ 25 V
на замовлення 36 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+17519.11 грн
В кошику  од. на суму  грн.
ETT630N18P60XPSA1 Infineon-ETT630N18P60-DataSheet-v03_01-EN.pdf?fileId=5546d46278d64ffd017931ecaa3c3c8f
ETT630N18P60XPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 700A MODULE
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 628 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 20000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 135°C (TC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
CY95F633HPMC-G-UNE2 infineon-cy95630h-series-new-8fx-8-bit-microcontrollers-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0edd859f61fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration
CY95F633HPMC-G-UNE2
Виробник: Infineon Technologies
Description: IC MCU 8BIT 12KB 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 28
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
CY95F633HPMC-G-UNERE2 Infineon-CY95630H_Series_New_8FX_8-bit_Microcontrollers-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd859f61fe
CY95F633HPMC-G-UNERE2
Виробник: Infineon Technologies
Description: IC MM MCU 32LQFP
Packaging: Tape & Reel (TR)
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 28
DigiKey Programmable: Not Verified
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CY95F633HPMC-G-UNERE2 Infineon-CY95630H_Series_New_8FX_8-bit_Microcontrollers-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd859f61fe
CY95F633HPMC-G-UNERE2
Виробник: Infineon Technologies
Description: IC MM MCU 32LQFP
Packaging: Cut Tape (CT)
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 28
DigiKey Programmable: Not Verified
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S25FL256LAGMFB001 INFN-S-A0017271261-1.pdf
S25FL256LAGMFB001
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Memory Interface: SPI - Quad I/O, QPI
Grade: Automotive
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 133 MHz
товару немає в наявності
Мінімальне замовлення: 705 шт
В кошику  од. на суму  грн.
S25FL256LAGMFB000 INFN-S-A0017271261-1.pdf
S25FL256LAGMFB000
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tray
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Memory Interface: SPI - Quad I/O, QPI
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 240 шт
В кошику  од. на суму  грн.
CY91F526DWEPMC-GSE2
CY91F526DWEPMC-GSE2
Виробник: Infineon Technologies
Description: IC MCU 32BT 1.0625MB FLSH 80LQFP
DigiKey Programmable: Not Verified
Number of I/O: 56
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 32x12b SAR; D/A 1x8b
Core Processor: FR81S
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 136K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 1190 шт
В кошику  од. на суму  грн.
CY91F526FSCPMC-GSE1 Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
CY91F526FSCPMC-GSE1
Виробник: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 76
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 37x12b; D/A 2x8b
Core Processor: FR81S
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 136K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 900 шт
В кошику  од. на суму  грн.
CY91F526FSCPMC-GSE2 Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
CY91F526FSCPMC-GSE2
Виробник: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 76
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 37x12b; D/A 2x8b
Core Processor: FR81S
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 136K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 900 шт
В кошику  од. на суму  грн.
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