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KP224N3111XTMA1 KP224N3111XTMA1 Infineon Technologies Description: INTEGRATED PRESSURE SENS
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog
Mounting Type: Surface Mount
Output: 0.1 V ~ 4.85 V
Operating Pressure: 1.45PSI ~ 58.02PSI (10kPa ~ 400kPa)
Pressure Type: Absolute
Accuracy: ±1%
Operating Temperature: -40°C ~ 140°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Maximum Pressure: 58.02PSI (400kPa)
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KP226IGE3411XTMA1 Infineon Technologies Infineon-2025_H1_Mapping_of_OPTIREG_LDO_with_XENSIV_Public-ProductSelectionGuide-v01_00-EN.pdf?fileId=8ac78c8c95d1335f0195f01429cb13f3 Description: INTEGRATED PRESSURE SENS
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog
Mounting Type: Surface Mount
Output: 0.1 V ~ 4.85 V
Operating Pressure: 1.45PSI ~ 58.02PSI (10kPa ~ 400kPa)
Pressure Type: Absolute
Accuracy: ±0.75PSI (±5.2kPa)
Operating Temperature: -40°C ~ 140°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-162
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
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KP204XTMA1 KP204XTMA1 Infineon Technologies Infineon-KP204-DataSheet-v01_00-EN.pdf?fileId=5546d4627645f87701764cfcf1205845 Description: SENSOR 15.95PSIA DSOF8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD Module
Output Type: SPI
Mounting Type: Surface Mount
Operating Pressure: 7.77PSI ~ 15.95PSI (53.6kPa ~ 110kPa)
Pressure Type: Absolute
Operating Temperature: -40°C ~ 90°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 11V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
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IRLU3802PBF IRLU3802PBF Infineon Technologies irlr3802pbf.pdf?fileId=5546d462533600a40153566d742526b5 Description: MOSFET N-CH 12V 84A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 4.5V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 6 V
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CY8C4146LDES263XQLA1 Infineon Technologies infineon-automotive-psoc-4100s-plus-datasheet-en-09018a9080860d3f.pdf Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
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IRFB7446GPBF IRFB7446GPBF Infineon Technologies IRFB7446GPbF.pdf Description: MOSFET N CH 40V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3183 pF @ 25 V
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IPSA70R360P7SAKMA1 IPSA70R360P7SAKMA1 Infineon Technologies infineon-ipsa70r360p7s-ds-en.pdf Description: MOSFET N-CH 700V 12.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3A, 10V
Power Dissipation (Max): 59.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 517 pF @ 400 V
на замовлення 1374 шт:
термін постачання 21-31 дні (днів)
534+40.08 грн
Мінімальне замовлення: 534
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IR2235JPbF IR2235JPbF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
на замовлення 1100 шт:
термін постачання 21-31 дні (днів)
1+1176.53 грн
10+898.52 грн
27+835.72 грн
108+725.15 грн
270+696.96 грн
513+681.12 грн
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IR2235PBF IR2235PBF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 28-PDIP
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
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IR3823AMTRPBFXUMA1 IR3823AMTRPBFXUMA1 Infineon Technologies Infineon-IR3823AMTRPBF-DataSheet-v02_40-EN.pdf?fileId=5546d46276fb756a017707220c305f1c Description: IC REG BUCK ADJ 3A 19IQFN
Packaging: Tape & Reel (TR)
Package / Case: 19-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-19-900
Synchronous Rectifier: Yes
Voltage - Output (Max): 6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
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GS0650306LLMRXUMA1 GS0650306LLMRXUMA1 Infineon Technologies Infineon-GS-065-030-6-LL-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e603d2dfc Description: GAN POWER TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
250+323.50 грн
500+305.79 грн
Мінімальне замовлення: 250
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GS0650306LLMRXUMA1 GS0650306LLMRXUMA1 Infineon Technologies Infineon-GS-065-030-6-LL-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e603d2dfc Description: GAN POWER TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
на замовлення 681 шт:
термін постачання 21-31 дні (днів)
1+698.70 грн
10+461.92 грн
100+374.29 грн
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AUIRFS4010-7TRL AUIRFS4010-7TRL Infineon Technologies AUIRFS4010-7P.pdf Description: MOSFET N-CH 100V 190A D2PAK-7P
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Grade: Automotive
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9830 pF @ 50 V
Qualification: AEC-Q101
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S25HL02GTDPBHV053 Infineon Technologies Infineon-S25HS02GT_S25HS04GT_S25HL02GT_S25HL04GT_2-Gb_(DDP)_4-Gb_(QDP)_HS-T_(1.8-V)_HL-T_(3.0-V)_Semper_Flash_with_Quad_SPI-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8d76471ad Description: IC FLASH 2GBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: PG-BGA-24-805
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6.5 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
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BSC079N03SG BSC079N03SG Infineon Technologies BSC079N03S_G.pdf Description: MOSFET N-CH 30V 14.6A/40A TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 40A, 10V
Power Dissipation (Max): 2.8W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
на замовлення 9619 шт:
термін постачання 21-31 дні (днів)
682+31.49 грн
Мінімальне замовлення: 682
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ADM5120PX-AB-T-2 ADM5120PX-AB-T-2 Infineon Technologies ADM5120P_PX.pdf Description: IC NETWORK CTRLR SOC P-FQFP-208
Packaging: Tray
Package / Case: 208-BFQFP Exposed Pad
Mounting Type: Surface Mount
Interface: Ethernet, UART, USB
RAM Size: 16K x 8
Voltage - Supply: 1.8V, 3.3V
Applications: Network Processor
Core Processor: 4Kc
Supplier Device Package: P-FQFP-208-10
DigiKey Programmable: Not Verified
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CY96F346ASBPQC-G-UJE2 Infineon Technologies Infineon-CY96345_346_CY96F345_CY96F346_F347_F348_F2MC-16FX_CY96340_Series_16-bit_Proprietary_Microcontroller_Datasheet-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edcaffb60a9&utm_source=cypress&ut Description: IC MCU 16BIT 288KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 56MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 24x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 82
DigiKey Programmable: Not Verified
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IGLT65R055D2ATMA1 IGLT65R055D2ATMA1 Infineon Technologies IGLT65R055D2ATMA1.pdf Description: IGLT65R055D2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
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IGLT65R055D2ATMA1 IGLT65R055D2ATMA1 Infineon Technologies IGLT65R055D2ATMA1.pdf Description: IGLT65R055D2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
на замовлення 1084 шт:
термін постачання 21-31 дні (днів)
1+485.39 грн
10+314.66 грн
100+231.02 грн
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TLD40203ETXUMA2 TLD40203ETXUMA2 Infineon Technologies infineon-tld4020-3std-kit-ug-usermanual-en.pdf Description: LITIX
Packaging: Tape & Reel (TR)
Package / Case: 16-TFSOP, 16-MSOP (0.118", 3.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C
Applications: General Purpose
Current - Output / Channel: 51.5mA
Internal Switch(s): No
Supplier Device Package: PG-TFDSO-16-1
Dimming: PWM
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 29V
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TLD40203ETXUMA2 TLD40203ETXUMA2 Infineon Technologies infineon-tld4020-3std-kit-ug-usermanual-en.pdf Description: LITIX
Packaging: Cut Tape (CT)
Package / Case: 16-TFSOP, 16-MSOP (0.118", 3.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C
Applications: General Purpose
Current - Output / Channel: 51.5mA
Internal Switch(s): No
Supplier Device Package: PG-TFDSO-16-1
Dimming: PWM
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 29V
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KITT2GC-2D-6MLITE KITT2GC-2D-6MLITE Infineon Technologies Infineon-TRAVEO_T2G_Cluster_6M_Lite_Kit_user_guideKIT_T2G_C-2D-6M_LITE-UserManual-v02_00-EN.pdf?fileId=8ac78c8c93dda25b0194f305e9dc771c Description: TRAVEO T2G CLUSTER 6M LITE
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s)
Core Processor: ARM® Cortex®-M0+, Cortex®-M7
Utilized IC / Part: CYT4DN
Platform: TRAVEO T2G Cluster 6M Lite
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IM66D132HV01XTMA1 Infineon Technologies infineon-im66d132h-datasheet-en.pdf Description: MIC SBP PP DIGITAL
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+45.00 грн
Мінімальне замовлення: 5000
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IM66D132HV01XTMA1 Infineon Technologies infineon-im66d132h-datasheet-en.pdf Description: MIC SBP PP DIGITAL
Packaging: Cut Tape (CT)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
4+99.93 грн
10+75.37 грн
25+68.54 грн
50+59.92 грн
100+55.87 грн
250+50.99 грн
500+48.97 грн
Мінімальне замовлення: 4
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TLE4973AE35D5S0001XUMA1 TLE4973AE35D5S0001XUMA1 Infineon Technologies Infineon-TLE4973_xE35x5_S0001_current_sensors-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8929aa4d018988b389ce50f6 Description: CURRENT SENSOR HE PG-TDSO-16
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
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TLE4973AE35D5S0001XUMA1 TLE4973AE35D5S0001XUMA1 Infineon Technologies Infineon-TLE4973_xE35x5_S0001_current_sensors-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8929aa4d018988b389ce50f6 Description: CURRENT SENSOR HE PG-TDSO-16
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
на замовлення 1294 шт:
термін постачання 21-31 дні (днів)
2+275.45 грн
5+237.43 грн
10+227.08 грн
25+201.51 грн
50+193.57 грн
100+186.28 грн
500+168.84 грн
1000+166.18 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
GS66516BMRXUSA1 GS66516BMRXUSA1 Infineon Technologies Infineon-GS66516B-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e5161cfda53e6 Description: GS66516B-MR
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
250+1707.95 грн
Мінімальне замовлення: 250
В кошику  од. на суму  грн.
GS66516BMRXUSA1 GS66516BMRXUSA1 Infineon Technologies Infineon-GS66516B-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e5161cfda53e6 Description: GS66516B-MR
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
на замовлення 735 шт:
термін постачання 21-31 дні (днів)
1+2591.56 грн
10+2013.04 грн
В кошику  од. на суму  грн.
TLI4971A030W2US0001XUMA1 Infineon Technologies infineon-tli4971-25-50-75-120-datasheet-en.pdf Description: CURRENT SENS CONS & IND
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±1.7%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 30A
Grade: Automotive
Number of Channels: 1
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+180.43 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
TLI4971A030W2US0001XUMA1 Infineon Technologies infineon-tli4971-25-50-75-120-datasheet-en.pdf Description: CURRENT SENS CONS & IND
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±1.7%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 30A
Grade: Automotive
Number of Channels: 1
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
2+274.61 грн
5+237.10 грн
10+226.75 грн
25+201.20 грн
50+193.29 грн
100+186.05 грн
500+168.64 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IR2102STRPBF IR2102STRPBF Infineon Technologies IRSDS17613-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+49.34 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IR2102STRPBF IR2102STRPBF Infineon Technologies IRSDS17613-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
на замовлення 3803 шт:
термін постачання 21-31 дні (днів)
4+99.93 грн
10+70.44 грн
25+63.82 грн
100+53.09 грн
250+49.85 грн
500+47.90 грн
1000+45.53 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRS2124STRPBF IRS2124STRPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 80ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 500mA, 500mA
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IRS2124STRPBF IRS2124STRPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 80ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 500mA, 500mA
DigiKey Programmable: Not Verified
на замовлення 15908 шт:
термін постачання 21-31 дні (днів)
185+118.23 грн
Мінімальне замовлення: 185
В кошику  од. на суму  грн.
FS410R12A7P1BHPSA1 FS410R12A7P1BHPSA1 Infineon Technologies infineon-fs410r12a7p1b-datasheet-en.pdf Description: IGBT MOD 1200V 300A HDG2XT-7611
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.58V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: AG-HDG2XT-7611
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 775 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 24600 pF @ 25 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+27853.80 грн
В кошику  од. на суму  грн.
BFP420FH6327XTSA1 BFP420FH6327XTSA1 Infineon Technologies Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Description: RF TRANS NPN 5.5V 25GHZ 4-TSFP
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19.5dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: 4-TSFP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1682+12.97 грн
Мінімальне замовлення: 1682
В кошику  од. на суму  грн.
IRF6662TRPBF IRF6662TRPBF Infineon Technologies irf6662pbf.pdf?fileId=5546d462533600a4015355ec7edc1a5d Description: MOSFET N-CH 100V 8.3A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.2A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRF6662TRPBF IRF6662TRPBF Infineon Technologies irf6662pbf.pdf?fileId=5546d462533600a4015355ec7edc1a5d Description: MOSFET N-CH 100V 8.3A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.2A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V
на замовлення 457 шт:
термін постачання 21-31 дні (днів)
2+229.26 грн
10+143.70 грн
100+99.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE9350BSJXTMA1 TLE9350BSJXTMA1 Infineon Technologies Infineon-TLE9350BSJ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018b66e2a1cc08e4 Description: IC TRANSCEIVER HALF 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
TLE9350BSJXTMA1 TLE9350BSJXTMA1 Infineon Technologies Infineon-TLE9350BSJ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018b66e2a1cc08e4 Description: IC TRANSCEIVER HALF 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1833 шт:
термін постачання 21-31 дні (днів)
5+78.10 грн
10+53.86 грн
25+48.59 грн
100+40.24 грн
250+37.68 грн
500+36.13 грн
1000+34.29 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
AIMZA75R008M1HXKSA1 AIMZA75R008M1HXKSA1 Infineon Technologies Infineon-AIMZA75R008M1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191b2c26c0f0e1f Description: AUTOMOTIVE_SICMOS
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 163A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 90.3A, 20V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 32.4mA
Supplier Device Package: PG-TO247-4-U02
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6137 pF @ 500 V
Qualification: AEC-Q101
на замовлення 268 шт:
термін постачання 21-31 дні (днів)
1+2594.08 грн
30+1651.75 грн
120+1643.96 грн
В кошику  од. на суму  грн.
AIMBG75R027M1HXTMA1 AIMBG75R027M1HXTMA1 Infineon Technologies Infineon-AIMBG75R027M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef042d11327b2 Description: SICFET N-CH 750V 64A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 8.8mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+538.77 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
AIMBG75R027M1HXTMA1 AIMBG75R027M1HXTMA1 Infineon Technologies Infineon-AIMBG75R027M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef042d11327b2 Description: SICFET N-CH 750V 64A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 8.8mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V
Qualification: AEC-Q101
на замовлення 1070 шт:
термін постачання 21-31 дні (днів)
1+1013.61 грн
10+707.59 грн
100+635.02 грн
В кошику  од. на суму  грн.
CYPD822952LQXITXUMA1 Infineon Technologies Infineon-EZ_PD_CCG8_CFP_USBC_Power_Delivery_controller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c93dda25b019505de8fdc3683 Description: USB-C PC
Packaging: Tape & Reel (TR)
Package / Case: 52-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB), ROM (96kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0+
Supplier Device Package: 52-QFN (5x8)
Number of I/O: 20
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CYPD822952LQXIXQLA1 Infineon Technologies Infineon-EZ_PD_CCG8_CFP_USBC_Power_Delivery_controller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c93dda25b019505de8fdc3683 Description: USB-C PC
Packaging: Tray
Package / Case: 52-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB), ROM (96kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0+
Supplier Device Package: 52-QFN (5x8)
Number of I/O: 20
товару немає в наявності
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EVAL60UTR11WINGTOBO1 EVAL60UTR11WINGTOBO1 Infineon Technologies UM_KIT_CSK_BGT60UTR11AIP-Wingboard_Userguide-EN.pdf Description: EVAL60UTR11WINGTOBO1
Packaging: Box
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
1+2124.64 грн
В кошику  од. на суму  грн.
AIMCQ120R040M1TXTMA1 AIMCQ120R040M1TXTMA1 Infineon Technologies Infineon-AIMCQ120R040M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe644396b1e Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 20V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 6.4mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1264 pF @ 800 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
AIMCQ120R040M1TXTMA1 AIMCQ120R040M1TXTMA1 Infineon Technologies Infineon-AIMCQ120R040M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe644396b1e Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 20V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 6.4mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1264 pF @ 800 V
Qualification: AEC-Q101
товару немає в наявності
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ISZ015N04NM7VATMA1 ISZ015N04NM7VATMA1 Infineon Technologies 448_ISZ015N04NM7V.pdf Description: ISZ015N04NM7VATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 177A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 36µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
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ISZ015N04NM7VATMA1 ISZ015N04NM7VATMA1 Infineon Technologies 448_ISZ015N04NM7V.pdf Description: ISZ015N04NM7VATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 177A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 36µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
на замовлення 4850 шт:
термін постачання 21-31 дні (днів)
3+136.04 грн
10+83.62 грн
100+56.30 грн
500+41.85 грн
1000+38.70 грн
Мінімальне замовлення: 3
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CY8C20566-24PVXI CY8C20566-24PVXI Infineon Technologies Description: IC MCU 32K FLASH 2K SRAM 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6
Program Memory Type: FLASH (32kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-SSOP
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 1050 шт:
термін постачання 21-31 дні (днів)
1+401.41 грн
10+295.73 грн
30+269.10 грн
120+230.25 грн
270+220.72 грн
510+214.62 грн
1020+205.67 грн
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EVINVHPD2SICFS0108TOBO2 Infineon Technologies Description: OTHER
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: FS01MR08A8MA2
Embedded: No
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EVINVHPD2SICFS0212TOBO1 Infineon Technologies Description: OTHER
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: FS02MR12A8MA2
Embedded: No
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CY7C1354DV25-200BZI CY7C1354DV25-200BZI Infineon Technologies Description: IC SRAM 9MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.2 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
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CY7C1470BV25-200BZI CY7C1470BV25-200BZI Infineon Technologies CY7C1470%2C72%2C74BV25.pdf Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY7C1312BV18-200BZI CY7C1312BV18-200BZI Infineon Technologies CY7C1310%2C12%2C14%2C1914BV18.pdf Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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CY7C1415AV18-200BZI CY7C1415AV18-200BZI Infineon Technologies CY7C1411%2C13%2C15%2C26AV18.pdf Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1414BV18-200BZI CY7C1414BV18-200BZI Infineon Technologies CY7C1412%2C14BV18.pdf Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1470BV33-200BZI CY7C1470BV33-200BZI Infineon Technologies download Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY7C1380DV33-200BZI CY7C1380DV33-200BZI Infineon Technologies Infineon-CY7C1380DV33_CY7C1382DV33_18-MBIT_(512_K_X_36_1_M_X_18)_PIPELINED_SRAM_Datasheet-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec1488335f9 Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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KP224N3111XTMA1
KP224N3111XTMA1
Виробник: Infineon Technologies
Description: INTEGRATED PRESSURE SENS
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog
Mounting Type: Surface Mount
Output: 0.1 V ~ 4.85 V
Operating Pressure: 1.45PSI ~ 58.02PSI (10kPa ~ 400kPa)
Pressure Type: Absolute
Accuracy: ±1%
Operating Temperature: -40°C ~ 140°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Maximum Pressure: 58.02PSI (400kPa)
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KP226IGE3411XTMA1 Infineon-2025_H1_Mapping_of_OPTIREG_LDO_with_XENSIV_Public-ProductSelectionGuide-v01_00-EN.pdf?fileId=8ac78c8c95d1335f0195f01429cb13f3
Виробник: Infineon Technologies
Description: INTEGRATED PRESSURE SENS
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog
Mounting Type: Surface Mount
Output: 0.1 V ~ 4.85 V
Operating Pressure: 1.45PSI ~ 58.02PSI (10kPa ~ 400kPa)
Pressure Type: Absolute
Accuracy: ±0.75PSI (±5.2kPa)
Operating Temperature: -40°C ~ 140°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-162
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
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KP204XTMA1 Infineon-KP204-DataSheet-v01_00-EN.pdf?fileId=5546d4627645f87701764cfcf1205845
KP204XTMA1
Виробник: Infineon Technologies
Description: SENSOR 15.95PSIA DSOF8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD Module
Output Type: SPI
Mounting Type: Surface Mount
Operating Pressure: 7.77PSI ~ 15.95PSI (53.6kPa ~ 110kPa)
Pressure Type: Absolute
Operating Temperature: -40°C ~ 90°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 11V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
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IRLU3802PBF irlr3802pbf.pdf?fileId=5546d462533600a40153566d742526b5
IRLU3802PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 12V 84A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 4.5V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 6 V
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CY8C4146LDES263XQLA1 infineon-automotive-psoc-4100s-plus-datasheet-en-09018a9080860d3f.pdf
Виробник: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
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IRFB7446GPBF IRFB7446GPbF.pdf
IRFB7446GPBF
Виробник: Infineon Technologies
Description: MOSFET N CH 40V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3183 pF @ 25 V
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IPSA70R360P7SAKMA1 infineon-ipsa70r360p7s-ds-en.pdf
IPSA70R360P7SAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 12.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3A, 10V
Power Dissipation (Max): 59.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 517 pF @ 400 V
на замовлення 1374 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
534+40.08 грн
Мінімальне замовлення: 534
В кошику  од. на суму  грн.
IR2235JPbF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2235JPbF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
на замовлення 1100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1176.53 грн
10+898.52 грн
27+835.72 грн
108+725.15 грн
270+696.96 грн
513+681.12 грн
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IR2235PBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2235PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 28-PDIP
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
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IR3823AMTRPBFXUMA1 Infineon-IR3823AMTRPBF-DataSheet-v02_40-EN.pdf?fileId=5546d46276fb756a017707220c305f1c
IR3823AMTRPBFXUMA1
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 3A 19IQFN
Packaging: Tape & Reel (TR)
Package / Case: 19-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-19-900
Synchronous Rectifier: Yes
Voltage - Output (Max): 6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
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GS0650306LLMRXUMA1 Infineon-GS-065-030-6-LL-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e603d2dfc
GS0650306LLMRXUMA1
Виробник: Infineon Technologies
Description: GAN POWER TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
250+323.50 грн
500+305.79 грн
Мінімальне замовлення: 250
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GS0650306LLMRXUMA1 Infineon-GS-065-030-6-LL-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e603d2dfc
GS0650306LLMRXUMA1
Виробник: Infineon Technologies
Description: GAN POWER TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
на замовлення 681 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+698.70 грн
10+461.92 грн
100+374.29 грн
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AUIRFS4010-7TRL AUIRFS4010-7P.pdf
AUIRFS4010-7TRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 190A D2PAK-7P
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Grade: Automotive
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9830 pF @ 50 V
Qualification: AEC-Q101
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S25HL02GTDPBHV053 Infineon-S25HS02GT_S25HS04GT_S25HL02GT_S25HL04GT_2-Gb_(DDP)_4-Gb_(QDP)_HS-T_(1.8-V)_HL-T_(3.0-V)_Semper_Flash_with_Quad_SPI-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8d76471ad
Виробник: Infineon Technologies
Description: IC FLASH 2GBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: PG-BGA-24-805
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6.5 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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BSC079N03SG BSC079N03S_G.pdf
BSC079N03SG
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14.6A/40A TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 40A, 10V
Power Dissipation (Max): 2.8W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
на замовлення 9619 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
682+31.49 грн
Мінімальне замовлення: 682
В кошику  од. на суму  грн.
ADM5120PX-AB-T-2 ADM5120P_PX.pdf
ADM5120PX-AB-T-2
Виробник: Infineon Technologies
Description: IC NETWORK CTRLR SOC P-FQFP-208
Packaging: Tray
Package / Case: 208-BFQFP Exposed Pad
Mounting Type: Surface Mount
Interface: Ethernet, UART, USB
RAM Size: 16K x 8
Voltage - Supply: 1.8V, 3.3V
Applications: Network Processor
Core Processor: 4Kc
Supplier Device Package: P-FQFP-208-10
DigiKey Programmable: Not Verified
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CY96F346ASBPQC-G-UJE2 Infineon-CY96345_346_CY96F345_CY96F346_F347_F348_F2MC-16FX_CY96340_Series_16-bit_Proprietary_Microcontroller_Datasheet-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edcaffb60a9&utm_source=cypress&ut
Виробник: Infineon Technologies
Description: IC MCU 16BIT 288KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 56MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 24x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 82
DigiKey Programmable: Not Verified
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IGLT65R055D2ATMA1 IGLT65R055D2ATMA1.pdf
IGLT65R055D2ATMA1
Виробник: Infineon Technologies
Description: IGLT65R055D2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
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IGLT65R055D2ATMA1 IGLT65R055D2ATMA1.pdf
IGLT65R055D2ATMA1
Виробник: Infineon Technologies
Description: IGLT65R055D2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
на замовлення 1084 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+485.39 грн
10+314.66 грн
100+231.02 грн
В кошику  од. на суму  грн.
TLD40203ETXUMA2 infineon-tld4020-3std-kit-ug-usermanual-en.pdf
TLD40203ETXUMA2
Виробник: Infineon Technologies
Description: LITIX
Packaging: Tape & Reel (TR)
Package / Case: 16-TFSOP, 16-MSOP (0.118", 3.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C
Applications: General Purpose
Current - Output / Channel: 51.5mA
Internal Switch(s): No
Supplier Device Package: PG-TFDSO-16-1
Dimming: PWM
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 29V
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TLD40203ETXUMA2 infineon-tld4020-3std-kit-ug-usermanual-en.pdf
TLD40203ETXUMA2
Виробник: Infineon Technologies
Description: LITIX
Packaging: Cut Tape (CT)
Package / Case: 16-TFSOP, 16-MSOP (0.118", 3.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C
Applications: General Purpose
Current - Output / Channel: 51.5mA
Internal Switch(s): No
Supplier Device Package: PG-TFDSO-16-1
Dimming: PWM
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 29V
товару немає в наявності
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KITT2GC-2D-6MLITE Infineon-TRAVEO_T2G_Cluster_6M_Lite_Kit_user_guideKIT_T2G_C-2D-6M_LITE-UserManual-v02_00-EN.pdf?fileId=8ac78c8c93dda25b0194f305e9dc771c
KITT2GC-2D-6MLITE
Виробник: Infineon Technologies
Description: TRAVEO T2G CLUSTER 6M LITE
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s)
Core Processor: ARM® Cortex®-M0+, Cortex®-M7
Utilized IC / Part: CYT4DN
Platform: TRAVEO T2G Cluster 6M Lite
товару немає в наявності
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IM66D132HV01XTMA1 infineon-im66d132h-datasheet-en.pdf
Виробник: Infineon Technologies
Description: MIC SBP PP DIGITAL
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+45.00 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IM66D132HV01XTMA1 infineon-im66d132h-datasheet-en.pdf
Виробник: Infineon Technologies
Description: MIC SBP PP DIGITAL
Packaging: Cut Tape (CT)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+99.93 грн
10+75.37 грн
25+68.54 грн
50+59.92 грн
100+55.87 грн
250+50.99 грн
500+48.97 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TLE4973AE35D5S0001XUMA1 Infineon-TLE4973_xE35x5_S0001_current_sensors-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8929aa4d018988b389ce50f6
TLE4973AE35D5S0001XUMA1
Виробник: Infineon Technologies
Description: CURRENT SENSOR HE PG-TDSO-16
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
товару немає в наявності
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TLE4973AE35D5S0001XUMA1 Infineon-TLE4973_xE35x5_S0001_current_sensors-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8929aa4d018988b389ce50f6
TLE4973AE35D5S0001XUMA1
Виробник: Infineon Technologies
Description: CURRENT SENSOR HE PG-TDSO-16
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
на замовлення 1294 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+275.45 грн
5+237.43 грн
10+227.08 грн
25+201.51 грн
50+193.57 грн
100+186.28 грн
500+168.84 грн
1000+166.18 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
GS66516BMRXUSA1 Infineon-GS66516B-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e5161cfda53e6
GS66516BMRXUSA1
Виробник: Infineon Technologies
Description: GS66516B-MR
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
250+1707.95 грн
Мінімальне замовлення: 250
В кошику  од. на суму  грн.
GS66516BMRXUSA1 Infineon-GS66516B-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e5161cfda53e6
GS66516BMRXUSA1
Виробник: Infineon Technologies
Description: GS66516B-MR
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
на замовлення 735 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2591.56 грн
10+2013.04 грн
В кошику  од. на суму  грн.
TLI4971A030W2US0001XUMA1 infineon-tli4971-25-50-75-120-datasheet-en.pdf
Виробник: Infineon Technologies
Description: CURRENT SENS CONS & IND
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±1.7%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 30A
Grade: Automotive
Number of Channels: 1
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+180.43 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
TLI4971A030W2US0001XUMA1 infineon-tli4971-25-50-75-120-datasheet-en.pdf
Виробник: Infineon Technologies
Description: CURRENT SENS CONS & IND
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±1.7%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 30A
Grade: Automotive
Number of Channels: 1
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+274.61 грн
5+237.10 грн
10+226.75 грн
25+201.20 грн
50+193.29 грн
100+186.05 грн
500+168.64 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IR2102STRPBF IRSDS17613-1.pdf?t.download=true&u=5oefqw
IR2102STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+49.34 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IR2102STRPBF IRSDS17613-1.pdf?t.download=true&u=5oefqw
IR2102STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
на замовлення 3803 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+99.93 грн
10+70.44 грн
25+63.82 грн
100+53.09 грн
250+49.85 грн
500+47.90 грн
1000+45.53 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRS2124STRPBF fundamentals-of-power-semiconductors
IRS2124STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 80ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 500mA, 500mA
DigiKey Programmable: Not Verified
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IRS2124STRPBF fundamentals-of-power-semiconductors
IRS2124STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 80ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 500mA, 500mA
DigiKey Programmable: Not Verified
на замовлення 15908 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
185+118.23 грн
Мінімальне замовлення: 185
В кошику  од. на суму  грн.
FS410R12A7P1BHPSA1 infineon-fs410r12a7p1b-datasheet-en.pdf
FS410R12A7P1BHPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 300A HDG2XT-7611
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.58V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: AG-HDG2XT-7611
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 775 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 24600 pF @ 25 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+27853.80 грн
В кошику  од. на суму  грн.
BFP420FH6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFP420FH6327XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 5.5V 25GHZ 4-TSFP
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19.5dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: 4-TSFP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1682+12.97 грн
Мінімальне замовлення: 1682
В кошику  од. на суму  грн.
IRF6662TRPBF irf6662pbf.pdf?fileId=5546d462533600a4015355ec7edc1a5d
IRF6662TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 8.3A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.2A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V
товару немає в наявності
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IRF6662TRPBF irf6662pbf.pdf?fileId=5546d462533600a4015355ec7edc1a5d
IRF6662TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 8.3A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.2A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V
на замовлення 457 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+229.26 грн
10+143.70 грн
100+99.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE9350BSJXTMA1 Infineon-TLE9350BSJ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018b66e2a1cc08e4
TLE9350BSJXTMA1
Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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TLE9350BSJXTMA1 Infineon-TLE9350BSJ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018b66e2a1cc08e4
TLE9350BSJXTMA1
Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1833 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+78.10 грн
10+53.86 грн
25+48.59 грн
100+40.24 грн
250+37.68 грн
500+36.13 грн
1000+34.29 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
AIMZA75R008M1HXKSA1 Infineon-AIMZA75R008M1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191b2c26c0f0e1f
AIMZA75R008M1HXKSA1
Виробник: Infineon Technologies
Description: AUTOMOTIVE_SICMOS
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 163A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 90.3A, 20V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 32.4mA
Supplier Device Package: PG-TO247-4-U02
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6137 pF @ 500 V
Qualification: AEC-Q101
на замовлення 268 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2594.08 грн
30+1651.75 грн
120+1643.96 грн
В кошику  од. на суму  грн.
AIMBG75R027M1HXTMA1 Infineon-AIMBG75R027M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef042d11327b2
AIMBG75R027M1HXTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 750V 64A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 8.8mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+538.77 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
AIMBG75R027M1HXTMA1 Infineon-AIMBG75R027M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef042d11327b2
AIMBG75R027M1HXTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 750V 64A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 8.8mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V
Qualification: AEC-Q101
на замовлення 1070 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1013.61 грн
10+707.59 грн
100+635.02 грн
В кошику  од. на суму  грн.
CYPD822952LQXITXUMA1 Infineon-EZ_PD_CCG8_CFP_USBC_Power_Delivery_controller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c93dda25b019505de8fdc3683
Виробник: Infineon Technologies
Description: USB-C PC
Packaging: Tape & Reel (TR)
Package / Case: 52-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB), ROM (96kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0+
Supplier Device Package: 52-QFN (5x8)
Number of I/O: 20
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CYPD822952LQXIXQLA1 Infineon-EZ_PD_CCG8_CFP_USBC_Power_Delivery_controller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c93dda25b019505de8fdc3683
Виробник: Infineon Technologies
Description: USB-C PC
Packaging: Tray
Package / Case: 52-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB), ROM (96kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0+
Supplier Device Package: 52-QFN (5x8)
Number of I/O: 20
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EVAL60UTR11WINGTOBO1 UM_KIT_CSK_BGT60UTR11AIP-Wingboard_Userguide-EN.pdf
EVAL60UTR11WINGTOBO1
Виробник: Infineon Technologies
Description: EVAL60UTR11WINGTOBO1
Packaging: Box
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2124.64 грн
В кошику  од. на суму  грн.
AIMCQ120R040M1TXTMA1 Infineon-AIMCQ120R040M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe644396b1e
AIMCQ120R040M1TXTMA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 20V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 6.4mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1264 pF @ 800 V
Qualification: AEC-Q101
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AIMCQ120R040M1TXTMA1 Infineon-AIMCQ120R040M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe644396b1e
AIMCQ120R040M1TXTMA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 20V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 6.4mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1264 pF @ 800 V
Qualification: AEC-Q101
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ISZ015N04NM7VATMA1 448_ISZ015N04NM7V.pdf
ISZ015N04NM7VATMA1
Виробник: Infineon Technologies
Description: ISZ015N04NM7VATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 177A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 36µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
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ISZ015N04NM7VATMA1 448_ISZ015N04NM7V.pdf
ISZ015N04NM7VATMA1
Виробник: Infineon Technologies
Description: ISZ015N04NM7VATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 177A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 36µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
на замовлення 4850 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+136.04 грн
10+83.62 грн
100+56.30 грн
500+41.85 грн
1000+38.70 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CY8C20566-24PVXI
CY8C20566-24PVXI
Виробник: Infineon Technologies
Description: IC MCU 32K FLASH 2K SRAM 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6
Program Memory Type: FLASH (32kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-SSOP
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 1050 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+401.41 грн
10+295.73 грн
30+269.10 грн
120+230.25 грн
270+220.72 грн
510+214.62 грн
1020+205.67 грн
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EVINVHPD2SICFS0108TOBO2
Виробник: Infineon Technologies
Description: OTHER
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: FS01MR08A8MA2
Embedded: No
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EVINVHPD2SICFS0212TOBO1
Виробник: Infineon Technologies
Description: OTHER
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: FS02MR12A8MA2
Embedded: No
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CY7C1354DV25-200BZI
CY7C1354DV25-200BZI
Виробник: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.2 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
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CY7C1470BV25-200BZI CY7C1470%2C72%2C74BV25.pdf
CY7C1470BV25-200BZI
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY7C1312BV18-200BZI CY7C1310%2C12%2C14%2C1914BV18.pdf
CY7C1312BV18-200BZI
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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CY7C1415AV18-200BZI CY7C1411%2C13%2C15%2C26AV18.pdf
CY7C1415AV18-200BZI
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1414BV18-200BZI CY7C1412%2C14BV18.pdf
CY7C1414BV18-200BZI
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1470BV33-200BZI download
CY7C1470BV33-200BZI
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY7C1380DV33-200BZI Infineon-CY7C1380DV33_CY7C1382DV33_18-MBIT_(512_K_X_36_1_M_X_18)_PIPELINED_SRAM_Datasheet-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec1488335f9
CY7C1380DV33-200BZI
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
товару немає в наявності
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