Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (123034) > Сторінка 769 з 2051
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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IRFHS8242TRPBF | Infineon Technologies |
Description: MOSFET N-CH 25V 9.9A/21A 6PQFNPackaging: Tape & Reel (TR) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 8.5A, 10V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 6-PQFN (2x2) (DFN2020) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 653 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRFHS8242TRPBF | Infineon Technologies |
Description: MOSFET N-CH 25V 9.9A/21A 6PQFNPackaging: Cut Tape (CT) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 8.5A, 10V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 6-PQFN (2x2) (DFN2020) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 653 pF @ 10 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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ESD188B1W0201E6327XTSA1 | Infineon Technologies |
Description: ESD188B1W0201E6327XTSA1Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TA) Applications: USB Capacitance @ Frequency: 0.06pF @ 12.8GHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 1V (Max) Supplier Device Package: SG-WLL-2-11 Bidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 4.5V (Typ) Power - Peak Pulse: 22.5W Power Line Protection: No |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | ||||||||||||||||
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ESD188B1W0201E6327XTSA1 | Infineon Technologies |
Description: ESD188B1W0201E6327XTSA1Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TA) Applications: USB Capacitance @ Frequency: 0.06pF @ 12.8GHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 1V (Max) Supplier Device Package: SG-WLL-2-11 Bidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 4.5V (Typ) Power - Peak Pulse: 22.5W Power Line Protection: No |
на замовлення 3664 шт: термін постачання 21-31 дні (днів) |
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PVI5050NPBF | Infineon Technologies |
Description: OPTOISO 4KV PHVOLT 8DIP MODIFIEDPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads Output Type: Photovoltaic Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Input Type: DC Current - Output / Channel: 5µA Voltage - Isolation: 4000Vrms Supplier Device Package: 8-DIP Modified Voltage - Output (Max): 5V Turn On / Turn Off Time (Typ): 300µs, 220µs (Max) Number of Channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S6E2CC8JFAGB1000A | Infineon Technologies |
Description: IC MCU 32BIT 1MB FLASH 192FBGAPackaging: Tray Package / Case: 192-LFBGA Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 1MB (1M x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 32x12b; D/A 2x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SPI, UART/USART, USB Peripherals: DMA, I2S, LVD, POR, PWM, WDT Supplier Device Package: 192-FBGA (12x12) Number of I/O: 152 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S6E2CCAJFAGB1000A | Infineon Technologies |
Description: IC MCU 32BIT 2MB FLASH 192BGAPackaging: Tray Package / Case: 192-LFBGA Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 2MB (2M x 8) RAM Size: 256K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 32x12b; D/A 2x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SPI, UART/USART, USB Peripherals: DMA, I2S, LVD, POR, PWM, WDT Supplier Device Package: 192-FBGA (12x12) Number of I/O: 152 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| CY8C4045LQIT441XQSA1 | Infineon Technologies |
Description: HMI-GROWTH PSOC4Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 980 шт В кошику од. на суму грн. | |||||||||||||||||
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IPB80N06S2H5ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 55V 80A TO263-3Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 230µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 289 шт: термін постачання 21-31 дні (днів) |
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| 64-2137PBF | Infineon Technologies |
Description: MOSFET N-CH 75V 106A D2PAKPackaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IPP083N10N5XKSA1 | Infineon Technologies |
Description: TRENCH >=100VInput Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 3.8V @ 49µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 73A, 10V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 203 шт: термін постачання 21-31 дні (днів) |
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CY96F388HSBPMC-GS-UJF4E1 | Infineon Technologies |
Description: IC MCU 16BIT 576KB FLASH 120LQFPPackaging: Tray Package / Case: 120-LQFP Mounting Type: Surface Mount Speed: 56MHz Program Memory Size: 576KB (576K x 8) RAM Size: 28K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: F²MC-16FX Data Converters: A/D 16x10b SAR Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART Peripherals: DMA, LCD, LVD, LVR, POR, PWM, WDT Supplier Device Package: 120-LQFP (16x16) Number of I/O: 96 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 840 шт В кошику од. на суму грн. | ||||||||||||||||
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IAUCN04S7L050HATMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V)Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 40W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 65A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V Rds On (Max) @ Id, Vgs: 5.04mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 10µA Supplier Device Package: PG-TDSON-8-57 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUCN04S7L050HATMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V)Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 40W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 65A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V Rds On (Max) @ Id, Vgs: 5.04mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 10µA Supplier Device Package: PG-TDSON-8-57 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUCN04S7N054HATMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V)Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 40W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 62A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 20V Rds On (Max) @ Id, Vgs: 5.41mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs(th) (Max) @ Id: 3V @ 10µA Supplier Device Package: PG-TDSON-8-57 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUCN04S7N054HATMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V)Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 40W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 62A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 20V Rds On (Max) @ Id, Vgs: 5.41mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs(th) (Max) @ Id: 3V @ 10µA Supplier Device Package: PG-TDSON-8-57 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IAUCN04S7N040HATMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V)Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 52W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 82A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 1177pF @ 20V Rds On (Max) @ Id, Vgs: 4.01mOhm @ 45A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 3V @ 15µA Supplier Device Package: PG-TDSON-8-56 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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IAUCN04S7N040HATMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V)Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 52W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 82A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 1177pF @ 20V Rds On (Max) @ Id, Vgs: 4.01mOhm @ 45A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 3V @ 15µA Supplier Device Package: PG-TDSON-8-56 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 945 шт: термін постачання 21-31 дні (днів) |
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IAUC60N04S6L030HATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 40V 60A 8TDSONPackaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 75W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 25µA Supplier Device Package: PG-TDSON-8-56 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 27677 шт: термін постачання 21-31 дні (днів) |
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IAUCN04S7N024HATMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V)Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: PG-TDSON-8-56 Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Rds On (Max) @ Id, Vgs: 2.46mOhm @ 50A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2226pF @ 20V Current - Continuous Drain (Id) @ 25°C: 100A (Tj) Drain to Source Voltage (Vdss): 40V Power - Max: 75W (Tc) Technology: MOSFET (Metal Oxide) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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IAUCN04S7N024HATMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V)Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: PG-TDSON-8-56 Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Rds On (Max) @ Id, Vgs: 2.46mOhm @ 50A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2226pF @ 20V Current - Continuous Drain (Id) @ 25°C: 100A (Tj) Drain to Source Voltage (Vdss): 40V Power - Max: 75W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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IAUCN04S7L023HATMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V)Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 75W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V Rds On (Max) @ Id, Vgs: 2.34mOhm @ 50A, 10V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 25µA Supplier Device Package: PG-TDSON-8-56 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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IAUCN04S7L023HATMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V)Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 75W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V Rds On (Max) @ Id, Vgs: 2.34mOhm @ 50A, 10V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 25µA Supplier Device Package: PG-TDSON-8-56 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 940 шт: термін постачання 21-31 дні (днів) |
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IAUCN04S7L025AHATMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V)Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 75W (Tc), 40W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tj), 65A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V, 915pF @ 20V Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V, 5.04mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V, 14nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 25µA, 1.8V @ 10µA Supplier Device Package: PG-TDSON-8-57 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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IAUCN04S7L025AHATMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V)Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 75W (Tc), 40W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tj), 65A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V, 915pF @ 20V Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V, 5.04mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V, 14nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 25µA, 1.8V @ 10µA Supplier Device Package: PG-TDSON-8-57 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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ISG0613N04NM6HATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 40V 42A 10VITFNPackaging: Tape & Reel (TR) Package / Case: 10-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 167W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V Vgs(th) (Max) @ Id: 2.8V @ 780µA Supplier Device Package: PG-VITFN-10-1 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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ISG0613N04NM6HATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 40V 42A 10VITFNPackaging: Cut Tape (CT) Package / Case: 10-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 167W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V Vgs(th) (Max) @ Id: 2.8V @ 780µA Supplier Device Package: PG-VITFN-10-1 |
на замовлення 2484 шт: термін постачання 21-31 дні (днів) |
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IPT65R040CM8XTMA1 | Infineon Technologies |
Description: IPT65R040CM8XTMA1Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 680µA Supplier Device Package: PG-HSOF-8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3796 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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IPT65R040CM8XTMA1 | Infineon Technologies |
Description: IPT65R040CM8XTMA1Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 680µA Supplier Device Package: PG-HSOF-8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3796 pF @ 400 V |
на замовлення 1660 шт: термін постачання 21-31 дні (днів) |
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CYT2B98CACQ0AZSGST | Infineon Technologies |
Description: IC MCU 32BT 2.0625MB FLSH 176QFPDigiKey Programmable: Not Verified Number of I/O: 152 Supplier Device Package: 176-LQFP (24x24) Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Dual-Core Data Converters: A/D 82x12b SAR Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F EEPROM Size: 128K x 8 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 256K x 8 Program Memory Size: 2.0625MB (2.0625M x 8) Speed: 100MHz, 160MHz Mounting Type: Surface Mount Package / Case: 176-LQFP Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||||||||
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CY8C4127LQSS445XQSA1 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 56UFQFNOperating Temperature: -40°C ~ 105°C (TA) RAM Size: 16K x 8 Program Memory Size: 128KB (128K x 8) Speed: 24MHz Mounting Type: Surface Mount Package / Case: 56-UFQFN Exposed Pad Packaging: Tray Number of I/O: 54 Supplier Device Package: 56-QFN (7x7) Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, TRNG, WDT Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 16x10b, 20x12b SAR; D/A 2x7/8b Core Processor: ARM® Cortex®-M0+ Program Memory Type: FLASH Oscillator Type: External, Internal |
товару немає в наявності |
Мінімальне замовлення: 520 шт В кошику од. на суму грн. | ||||||||||||||||
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CY8C4147LQSS445XQSA1 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 64VFQFNQualification: AEC-Q100 Number of I/O: 54 Grade: Automotive Supplier Device Package: 64-QFN (9x9) Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, TRNG, WDT Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b Core Processor: ARM® Cortex®-M0+ Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 16K x 8 Program Memory Size: 128KB (128K x 8) Speed: 48MHz Mounting Type: Surface Mount, Wettable Flank Package / Case: 64-VFQFN Exposed Pad Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 520 шт В кошику од. на суму грн. | ||||||||||||||||
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AIKQB120N75CP2ALSA1 | Infineon Technologies |
Description: AIKQB120N75CP2ALSA1Qualification: AEC-Q101 Power - Max: 577 W Current - Collector Pulsed (Icm): 360 A Voltage - Collector Emitter Breakdown (Max): 750 V Current - Collector (Ic) (Max): 150 A Grade: Automotive Gate Charge: 731 nC Test Condition: 470V, 120A, 5Ohm, 15V Switching Energy: 6.82mJ (on), 3.8mJ (off) Td (on/off) @ 25°C: 71ns/244ns Supplier Device Package: PG-TO247-3-51 Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 120A Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 235 шт: термін постачання 21-31 дні (днів) |
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AIKQB160N75CP2ALSA1 | Infineon Technologies |
Description: AIKQB160N75CP2ALSA1Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 160A Supplier Device Package: PG-TO247-3-51 Td (on/off) @ 25°C: 72.3ns/216ns Switching Energy: 12.4mJ (on), 5.7mJ (off) Test Condition: 470V, 160A, 5Ohm, 15V Gate Charge: 1.02 µC Grade: Automotive Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 750 V Current - Collector Pulsed (Icm): 480 A Power - Max: 750 W Qualification: AEC-Q101 |
на замовлення 231 шт: термін постачання 21-31 дні (днів) |
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TT250N18KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.8KV MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 250 A Voltage - Gate Trigger (Vgt) (Max): 2 V Voltage - Off State: 1.8 kV |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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TT251N16KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 9100A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 250 A Voltage - Gate Trigger (Vgt) (Max): 2 V Voltage - Off State: 1.6 kV |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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ISZ056N03LF2SATMA1 | Infineon Technologies |
Description: ISZ056N03LF2SATMA1Input Capacitance (Ciss) (Max) @ Vds: 1012 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TSDSON-8 FL Vgs(th) (Max) @ Id: 2.35V @ 30µA Power Dissipation (Max): 3W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 72A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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ISZ056N03LF2SATMA1 | Infineon Technologies |
Description: ISZ056N03LF2SATMA1Vgs(th) (Max) @ Id: 2.35V @ 30µA Power Dissipation (Max): 3W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 72A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1012 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TSDSON-8 FL |
на замовлення 4936 шт: термін постачання 21-31 дні (днів) |
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| IRSM515-024DA2 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 1.6A 23DIPApplications: AC Motors Rds On (Typ): 1.8Ohm Voltage - Supply: 13.5V ~ 16.5V Output Configuration: Half Bridge (3) Operating Temperature: -40°C ~ 150°C (TJ) Interface: Logic Mounting Type: Through Hole Package / Case: 32-PowerDIP Module, 23 Leads Features: Bootstrap Circuit Packaging: Tube Load Type: Inductive Fault Protection: UVLO Supplier Device Package: 23-DIP Voltage - Load: 200V (Max) Technology: UMOS Current - Peak Output: 7A Current - Output / Channel: 1.6A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IPU60R2K0C6BKMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 2.4A TO251-3Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO251-3 Vgs(th) (Max) @ Id: 3.5V @ 60µA Power Dissipation (Max): 22.3W (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
на замовлення 352500 шт: термін постачання 21-31 дні (днів) |
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BGSA149M2N10E6327XTSA1 | Infineon Technologies |
Description: RF SWITCH SP4TTopology: Reflective Frequency Range: 7.125GHz Voltage - Supply: 1.2V, 1.8V RF Type: General Purpose Circuit: SP4T Mounting Type: Surface Mount Package / Case: 10-XFQFN Packaging: Tape & Reel (TR) Supplier Device Package: PG-TSNP-10-9 |
товару немає в наявності |
Мінімальне замовлення: 12000 шт В кошику од. на суму грн. | ||||||||||||||||
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BGSA149M2N10E6327XTSA1 | Infineon Technologies |
Description: RF SWITCH SP4TSupplier Device Package: PG-TSNP-10-9 Topology: Reflective Frequency Range: 7.125GHz Voltage - Supply: 1.2V, 1.8V RF Type: General Purpose Circuit: SP4T Mounting Type: Surface Mount Package / Case: 10-XFQFN Packaging: Cut Tape (CT) |
на замовлення 11913 шт: термін постачання 21-31 дні (днів) |
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EVALKITTLE9189QUWTOBO1 | Infineon Technologies |
Description: EVALKITTLE9189QUWTOBO1Embedded: Yes, MCU, 32-Bit Utilized IC / Part: TLE9189 Contents: Board(s) Type: Power Management Function: Gate Driver Packaging: Box |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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EVALKITTLE9189QVWTOBO1 | Infineon Technologies |
Description: EVALKITTLE9189QVWTOBO1 Embedded: Yes, MCU, 32-Bit Utilized IC / Part: TLE9189 Contents: Board(s) Type: Power Management Function: Gate Driver Packaging: Box |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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XC2268I136F128LRAAKXUMA1 | Infineon Technologies |
Description: IC MCU 16/32BIT 1MB FLASHPackaging: Tape & Reel (TR) Package / Case: 100-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 128MHz Program Memory Size: 1MB (1M x 8) RAM Size: 90K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 16x12b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI Peripherals: DMA, I2S, POR, PWM, WDT Supplier Device Package: PG-LQFP-100-8 Number of I/O: 76 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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BTS141AKSA1 | Infineon Technologies |
Description: IC PWR SWITCHFeatures: Auto Restart, Slew Rate Controlled Packaging: Bulk Package / Case: TO-220-3 Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 25mOhm Input Type: Non-Inverting Voltage - Load: 60V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 12A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO220-3-1 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTS141TCAUMA1 | Infineon Technologies |
Description: IC PWR SWITCHFeatures: Auto Restart, Slew Rate Controlled Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 25mOhm Input Type: Non-Inverting Voltage - Load: 60V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 12A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO263-3-2 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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XDPP1148100BXUMA1 | Infineon Technologies |
Description: CONTROLLERPackaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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XDPP1148100BXUMA1 | Infineon Technologies |
Description: CONTROLLERPackaging: Cut Tape (CT) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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AUIPS1011S | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 D2PAKInput Type: Non-Inverting Rds On (Typ): 10mOhm Output Configuration: Low Side Operating Temperature: -40°C ~ 150°C (TJ) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube Qualification: AEC-Q100 Grade: Automotive Fault Protection: Current Limiting (Fixed), Over Temperature Supplier Device Package: D2PAK Ratio - Input:Output: 1:1 Current - Output (Max): 6.5A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 36V (Max) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY8C20534-12PVXIT | Infineon Technologies |
Description: IC MCU 8BIT 8KB FLASH 28SSOPPackage / Case: 28-SSOP (0.209", 5.30mm Width) Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Number of I/O: 24 Supplier Device Package: 28-SSOP Peripherals: LVD, POR, WDT Connectivity: I2C, SPI Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Core Size: 8-Bit Core Processor: M8C Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 512 x 8 Program Memory Size: 8KB (8K x 8) Speed: 12MHz Mounting Type: Surface Mount |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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XMC1403Q040X0064AAXTMA1 | Infineon Technologies |
Description: XMC1000Packaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 12x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: CANbus, I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-VQFN-40-13 Number of I/O: 27 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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XMC1403Q048X0064AAXTMA1 | Infineon Technologies |
Description: XMC1000Packaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 12x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: CANbus, I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-VQFN-48-73 Number of I/O: 34 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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XMC1403Q040X0128AAXTMA1 | Infineon Technologies |
Description: XMC1000Packaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 12x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: CANbus, I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-VQFN-40-13 Number of I/O: 27 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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XMC1403Q064X0064AAXTMA1 | Infineon Technologies |
Description: XMC1000Packaging: Tape & Reel (TR) Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 12x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: CANbus, I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-VQFN-64-6 Number of I/O: 48 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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XMC1403Q048X0128AAXTMA1 | Infineon Technologies |
Description: XMC1000Packaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 12x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: CANbus, I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-VQFN-48-73 Number of I/O: 34 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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PEF 4268 T V1.2 | Infineon Technologies |
Description: IC TELECOM INTERFACE PDSO-24Packaging: Tape & Reel (TR) Package / Case: 24-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Function: Subscriber Line Interface Concept (SLIC) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.75V ~ 5.25V Supplier Device Package: PG-DSO-24-8 Number of Circuits: 1 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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IRSM515-044PA | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 3A 23SOPFeatures: Bootstrap Circuit Packaging: Bulk Package / Case: 23-PowerSMD Module Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 13.5V ~ 16.5V Rds On (Typ): 800mOhm Applications: AC Motors Current - Output / Channel: 3A Current - Peak Output: 15A Technology: UMOS Voltage - Load: 200V (Max) Supplier Device Package: 23-SOP Fault Protection: UVLO Load Type: Inductive |
на замовлення 120 шт: термін постачання 21-31 дні (днів) |
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IRSM515-044PA | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 3A 23SOPFeatures: Bootstrap Circuit Packaging: Tube Package / Case: 23-PowerSMD Module Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 13.5V ~ 16.5V Rds On (Typ): 800mOhm Applications: AC Motors Current - Output / Channel: 3A Current - Peak Output: 15A Technology: UMOS Voltage - Load: 200V (Max) Supplier Device Package: 23-SOP Fault Protection: UVLO Load Type: Inductive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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F3L400R10N3S7FC1BPSA1 | Infineon Technologies |
Description: IGBT MODULE 950V 105A 20MW Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.57V @ 15V, 70A NTC Thermistor: Yes IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 105 A Voltage - Collector Emitter Breakdown (Max): 950 V Power - Max: 20 mW Current - Collector Cutoff (Max): 25 µA Input Capacitance (Cies) @ Vce: 13000 pF @ 25 V |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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| IRFHS8242TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 9.9A/21A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 653 pF @ 10 V
Description: MOSFET N-CH 25V 9.9A/21A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 653 pF @ 10 V
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| IRFHS8242TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 9.9A/21A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 653 pF @ 10 V
Description: MOSFET N-CH 25V 9.9A/21A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 653 pF @ 10 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.47 грн |
| 10+ | 31.79 грн |
| 100+ | 20.60 грн |
| 500+ | 14.78 грн |
| 1000+ | 13.32 грн |
| 2000+ | 12.08 грн |
| ESD188B1W0201E6327XTSA1 |
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Виробник: Infineon Technologies
Description: ESD188B1W0201E6327XTSA1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: USB
Capacitance @ Frequency: 0.06pF @ 12.8GHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 1V (Max)
Supplier Device Package: SG-WLL-2-11
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 4.5V (Typ)
Power - Peak Pulse: 22.5W
Power Line Protection: No
Description: ESD188B1W0201E6327XTSA1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: USB
Capacitance @ Frequency: 0.06pF @ 12.8GHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 1V (Max)
Supplier Device Package: SG-WLL-2-11
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 4.5V (Typ)
Power - Peak Pulse: 22.5W
Power Line Protection: No
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Мінімальне замовлення: 15000 шт
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| ESD188B1W0201E6327XTSA1 |
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Виробник: Infineon Technologies
Description: ESD188B1W0201E6327XTSA1
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: USB
Capacitance @ Frequency: 0.06pF @ 12.8GHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 1V (Max)
Supplier Device Package: SG-WLL-2-11
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 4.5V (Typ)
Power - Peak Pulse: 22.5W
Power Line Protection: No
Description: ESD188B1W0201E6327XTSA1
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: USB
Capacitance @ Frequency: 0.06pF @ 12.8GHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 1V (Max)
Supplier Device Package: SG-WLL-2-11
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 4.5V (Typ)
Power - Peak Pulse: 22.5W
Power Line Protection: No
на замовлення 3664 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.50 грн |
| 32+ | 9.33 грн |
| 100+ | 5.80 грн |
| 500+ | 3.98 грн |
| 1000+ | 3.50 грн |
| 2000+ | 3.10 грн |
| PVI5050NPBF |
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Виробник: Infineon Technologies
Description: OPTOISO 4KV PHVOLT 8DIP MODIFIED
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: Photovoltaic
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Input Type: DC
Current - Output / Channel: 5µA
Voltage - Isolation: 4000Vrms
Supplier Device Package: 8-DIP Modified
Voltage - Output (Max): 5V
Turn On / Turn Off Time (Typ): 300µs, 220µs (Max)
Number of Channels: 1
Description: OPTOISO 4KV PHVOLT 8DIP MODIFIED
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: Photovoltaic
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Input Type: DC
Current - Output / Channel: 5µA
Voltage - Isolation: 4000Vrms
Supplier Device Package: 8-DIP Modified
Voltage - Output (Max): 5V
Turn On / Turn Off Time (Typ): 300µs, 220µs (Max)
Number of Channels: 1
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| S6E2CC8JFAGB1000A |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
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| S6E2CCAJFAGB1000A |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 192BGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2MB FLASH 192BGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
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| CY8C4045LQIT441XQSA1 |
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товару немає в наявності
Мінімальне замовлення: 980 шт
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| IPB80N06S2H5ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Qualification: AEC-Q101
на замовлення 289 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 154+ | 128.15 грн |
| IPP083N10N5XKSA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 73A, 10V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 73A, 10V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 203 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 165.83 грн |
| 50+ | 78.28 грн |
| 100+ | 70.38 грн |
| CY96F388HSBPMC-GS-UJF4E1 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 576KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 56MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 28K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 16x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LCD, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 96
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 576KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 56MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 28K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 16x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LCD, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 96
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 840 шт
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| IAUCN04S7L050HATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 65A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V
Rds On (Max) @ Id, Vgs: 5.04mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 65A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V
Rds On (Max) @ Id, Vgs: 5.04mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 33.77 грн |
| IAUCN04S7L050HATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 65A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V
Rds On (Max) @ Id, Vgs: 5.04mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 65A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V
Rds On (Max) @ Id, Vgs: 5.04mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 130.96 грн |
| 10+ | 80.07 грн |
| 100+ | 53.76 грн |
| 500+ | 39.88 грн |
| 1000+ | 36.48 грн |
| 2000+ | 34.09 грн |
| IAUCN04S7N054HATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 62A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 20V
Rds On (Max) @ Id, Vgs: 5.41mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 62A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 20V
Rds On (Max) @ Id, Vgs: 5.41mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 33.77 грн |
| IAUCN04S7N054HATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 62A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 20V
Rds On (Max) @ Id, Vgs: 5.41mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 62A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 20V
Rds On (Max) @ Id, Vgs: 5.41mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 130.96 грн |
| 10+ | 80.07 грн |
| 100+ | 53.76 грн |
| 500+ | 39.88 грн |
| 1000+ | 36.48 грн |
| 2000+ | 34.09 грн |
| IAUCN04S7N040HATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 52W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 82A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1177pF @ 20V
Rds On (Max) @ Id, Vgs: 4.01mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 15µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 52W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 82A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1177pF @ 20V
Rds On (Max) @ Id, Vgs: 4.01mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 15µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IAUCN04S7N040HATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 52W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 82A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1177pF @ 20V
Rds On (Max) @ Id, Vgs: 4.01mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 15µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 52W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 82A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1177pF @ 20V
Rds On (Max) @ Id, Vgs: 4.01mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 15µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
на замовлення 945 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 141.81 грн |
| 10+ | 87.16 грн |
| 100+ | 58.88 грн |
| 500+ | 43.89 грн |
| IAUC60N04S6L030HATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
на замовлення 27677 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 264+ | 76.30 грн |
| IAUCN04S7N024HATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TDSON-8-56
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 2.46mOhm @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2226pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Drain to Source Voltage (Vdss): 40V
Power - Max: 75W (Tc)
Technology: MOSFET (Metal Oxide)
Description: MOSFET_(20V 40V)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TDSON-8-56
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 2.46mOhm @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2226pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Drain to Source Voltage (Vdss): 40V
Power - Max: 75W (Tc)
Technology: MOSFET (Metal Oxide)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IAUCN04S7N024HATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TDSON-8-56
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 2.46mOhm @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2226pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Drain to Source Voltage (Vdss): 40V
Power - Max: 75W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET_(20V 40V)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TDSON-8-56
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 2.46mOhm @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2226pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Drain to Source Voltage (Vdss): 40V
Power - Max: 75W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 151.88 грн |
| 10+ | 108.35 грн |
| 25+ | 98.83 грн |
| 100+ | 82.99 грн |
| 250+ | 78.33 грн |
| 500+ | 75.52 грн |
| 1000+ | 72.00 грн |
| IAUCN04S7L023HATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V
Rds On (Max) @ Id, Vgs: 2.34mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V
Rds On (Max) @ Id, Vgs: 2.34mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IAUCN04S7L023HATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V
Rds On (Max) @ Id, Vgs: 2.34mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V
Rds On (Max) @ Id, Vgs: 2.34mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
на замовлення 940 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 103.06 грн |
| 10+ | 72.46 грн |
| 25+ | 65.82 грн |
| 100+ | 54.87 грн |
| 250+ | 51.59 грн |
| 500+ | 49.61 грн |
| IAUCN04S7L025AHATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj), 65A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V, 915pF @ 20V
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V, 5.04mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V, 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 25µA, 1.8V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj), 65A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V, 915pF @ 20V
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V, 5.04mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V, 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 25µA, 1.8V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IAUCN04S7L025AHATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj), 65A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V, 915pF @ 20V
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V, 5.04mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V, 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 25µA, 1.8V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj), 65A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V, 915pF @ 20V
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V, 5.04mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V, 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 25µA, 1.8V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 106.94 грн |
| 10+ | 74.99 грн |
| 25+ | 67.96 грн |
| 100+ | 56.54 грн |
| 250+ | 53.09 грн |
| 500+ | 51.00 грн |
| 1000+ | 48.48 грн |
| ISG0613N04NM6HATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 42A 10VITFN
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 780µA
Supplier Device Package: PG-VITFN-10-1
Description: MOSFET 2N-CH 40V 42A 10VITFN
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 780µA
Supplier Device Package: PG-VITFN-10-1
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| ISG0613N04NM6HATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 42A 10VITFN
Packaging: Cut Tape (CT)
Package / Case: 10-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 780µA
Supplier Device Package: PG-VITFN-10-1
Description: MOSFET 2N-CH 40V 42A 10VITFN
Packaging: Cut Tape (CT)
Package / Case: 10-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 780µA
Supplier Device Package: PG-VITFN-10-1
на замовлення 2484 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 309.96 грн |
| 10+ | 197.07 грн |
| 100+ | 139.44 грн |
| 500+ | 113.72 грн |
| IPT65R040CM8XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: IPT65R040CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3796 pF @ 400 V
Description: IPT65R040CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3796 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IPT65R040CM8XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: IPT65R040CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3796 pF @ 400 V
Description: IPT65R040CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3796 pF @ 400 V
на замовлення 1660 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 503.69 грн |
| 10+ | 328.26 грн |
| 100+ | 248.96 грн |
| CYT2B98CACQ0AZSGST |
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Виробник: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 176QFP
DigiKey Programmable: Not Verified
Number of I/O: 152
Supplier Device Package: 176-LQFP (24x24)
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 82x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 256K x 8
Program Memory Size: 2.0625MB (2.0625M x 8)
Speed: 100MHz, 160MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Packaging: Tape & Reel (TR)
Description: IC MCU 32BT 2.0625MB FLSH 176QFP
DigiKey Programmable: Not Verified
Number of I/O: 152
Supplier Device Package: 176-LQFP (24x24)
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 82x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 256K x 8
Program Memory Size: 2.0625MB (2.0625M x 8)
Speed: 100MHz, 160MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 300 шт
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| CY8C4127LQSS445XQSA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 56UFQFN
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 56-UFQFN Exposed Pad
Packaging: Tray
Number of I/O: 54
Supplier Device Package: 56-QFN (7x7)
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, TRNG, WDT
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b, 20x12b SAR; D/A 2x7/8b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
Description: IC MCU 32BIT 128KB FLASH 56UFQFN
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 56-UFQFN Exposed Pad
Packaging: Tray
Number of I/O: 54
Supplier Device Package: 56-QFN (7x7)
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, TRNG, WDT
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b, 20x12b SAR; D/A 2x7/8b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
товару немає в наявності
Мінімальне замовлення: 520 шт
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| CY8C4147LQSS445XQSA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64VFQFN
Qualification: AEC-Q100
Number of I/O: 54
Grade: Automotive
Supplier Device Package: 64-QFN (9x9)
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, TRNG, WDT
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 48MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 64-VFQFN Exposed Pad
Packaging: Tray
Description: IC MCU 32BIT 128KB FLASH 64VFQFN
Qualification: AEC-Q100
Number of I/O: 54
Grade: Automotive
Supplier Device Package: 64-QFN (9x9)
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, TRNG, WDT
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 48MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 64-VFQFN Exposed Pad
Packaging: Tray
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Мінімальне замовлення: 520 шт
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| AIKQB120N75CP2ALSA1 |
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Виробник: Infineon Technologies
Description: AIKQB120N75CP2ALSA1
Qualification: AEC-Q101
Power - Max: 577 W
Current - Collector Pulsed (Icm): 360 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector (Ic) (Max): 150 A
Grade: Automotive
Gate Charge: 731 nC
Test Condition: 470V, 120A, 5Ohm, 15V
Switching Energy: 6.82mJ (on), 3.8mJ (off)
Td (on/off) @ 25°C: 71ns/244ns
Supplier Device Package: PG-TO247-3-51
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 120A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: AIKQB120N75CP2ALSA1
Qualification: AEC-Q101
Power - Max: 577 W
Current - Collector Pulsed (Icm): 360 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector (Ic) (Max): 150 A
Grade: Automotive
Gate Charge: 731 nC
Test Condition: 470V, 120A, 5Ohm, 15V
Switching Energy: 6.82mJ (on), 3.8mJ (off)
Td (on/off) @ 25°C: 71ns/244ns
Supplier Device Package: PG-TO247-3-51
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 120A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 235 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 844.65 грн |
| 30+ | 491.03 грн |
| 120+ | 420.32 грн |
| AIKQB160N75CP2ALSA1 |
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Виробник: Infineon Technologies
Description: AIKQB160N75CP2ALSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 160A
Supplier Device Package: PG-TO247-3-51
Td (on/off) @ 25°C: 72.3ns/216ns
Switching Energy: 12.4mJ (on), 5.7mJ (off)
Test Condition: 470V, 160A, 5Ohm, 15V
Gate Charge: 1.02 µC
Grade: Automotive
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 750 W
Qualification: AEC-Q101
Description: AIKQB160N75CP2ALSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 160A
Supplier Device Package: PG-TO247-3-51
Td (on/off) @ 25°C: 72.3ns/216ns
Switching Energy: 12.4mJ (on), 5.7mJ (off)
Test Condition: 470V, 160A, 5Ohm, 15V
Gate Charge: 1.02 µC
Grade: Automotive
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 750 W
Qualification: AEC-Q101
на замовлення 231 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 850.85 грн |
| 30+ | 495.68 грн |
| 120+ | 424.78 грн |
| TT250N18KOFHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.8 kV
Description: SCR MODULE 1.8KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.8 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 11993.25 грн |
| TT251N16KOFHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9100A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9100A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.6 kV
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 11742.18 грн |
| ISZ056N03LF2SATMA1 |
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Виробник: Infineon Technologies
Description: ISZ056N03LF2SATMA1
Input Capacitance (Ciss) (Max) @ Vds: 1012 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TSDSON-8 FL
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Power Dissipation (Max): 3W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: ISZ056N03LF2SATMA1
Input Capacitance (Ciss) (Max) @ Vds: 1012 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TSDSON-8 FL
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Power Dissipation (Max): 3W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 5000 шт
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| ISZ056N03LF2SATMA1 |
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Виробник: Infineon Technologies
Description: ISZ056N03LF2SATMA1
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Power Dissipation (Max): 3W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1012 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TSDSON-8 FL
Description: ISZ056N03LF2SATMA1
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Power Dissipation (Max): 3W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1012 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TSDSON-8 FL
на замовлення 4936 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 67.42 грн |
| 10+ | 40.74 грн |
| 100+ | 26.59 грн |
| 500+ | 19.24 грн |
| 1000+ | 17.40 грн |
| 2000+ | 15.85 грн |
| IRSM515-024DA2 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 1.6A 23DIP
Applications: AC Motors
Rds On (Typ): 1.8Ohm
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 32-PowerDIP Module, 23 Leads
Features: Bootstrap Circuit
Packaging: Tube
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: 23-DIP
Voltage - Load: 200V (Max)
Technology: UMOS
Current - Peak Output: 7A
Current - Output / Channel: 1.6A
Description: IC HALF BRIDGE DRIVER 1.6A 23DIP
Applications: AC Motors
Rds On (Typ): 1.8Ohm
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 32-PowerDIP Module, 23 Leads
Features: Bootstrap Circuit
Packaging: Tube
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: 23-DIP
Voltage - Load: 200V (Max)
Technology: UMOS
Current - Peak Output: 7A
Current - Output / Channel: 1.6A
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| IPU60R2K0C6BKMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 2.4A TO251-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Power Dissipation (Max): 22.3W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Description: MOSFET N-CH 600V 2.4A TO251-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Power Dissipation (Max): 22.3W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
на замовлення 352500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 673+ | 30.12 грн |
| BGSA149M2N10E6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF SWITCH SP4T
Topology: Reflective
Frequency Range: 7.125GHz
Voltage - Supply: 1.2V, 1.8V
RF Type: General Purpose
Circuit: SP4T
Mounting Type: Surface Mount
Package / Case: 10-XFQFN
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-TSNP-10-9
Description: RF SWITCH SP4T
Topology: Reflective
Frequency Range: 7.125GHz
Voltage - Supply: 1.2V, 1.8V
RF Type: General Purpose
Circuit: SP4T
Mounting Type: Surface Mount
Package / Case: 10-XFQFN
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-TSNP-10-9
товару немає в наявності
Мінімальне замовлення: 12000 шт
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| BGSA149M2N10E6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF SWITCH SP4T
Supplier Device Package: PG-TSNP-10-9
Topology: Reflective
Frequency Range: 7.125GHz
Voltage - Supply: 1.2V, 1.8V
RF Type: General Purpose
Circuit: SP4T
Mounting Type: Surface Mount
Package / Case: 10-XFQFN
Packaging: Cut Tape (CT)
Description: RF SWITCH SP4T
Supplier Device Package: PG-TSNP-10-9
Topology: Reflective
Frequency Range: 7.125GHz
Voltage - Supply: 1.2V, 1.8V
RF Type: General Purpose
Circuit: SP4T
Mounting Type: Surface Mount
Package / Case: 10-XFQFN
Packaging: Cut Tape (CT)
на замовлення 11913 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 43.39 грн |
| 10+ | 35.82 грн |
| 25+ | 33.73 грн |
| 100+ | 28.97 грн |
| 250+ | 27.35 грн |
| 500+ | 26.21 грн |
| 1000+ | 24.72 грн |
| 5000+ | 22.47 грн |
| EVALKITTLE9189QUWTOBO1 |
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Виробник: Infineon Technologies
Description: EVALKITTLE9189QUWTOBO1
Embedded: Yes, MCU, 32-Bit
Utilized IC / Part: TLE9189
Contents: Board(s)
Type: Power Management
Function: Gate Driver
Packaging: Box
Description: EVALKITTLE9189QUWTOBO1
Embedded: Yes, MCU, 32-Bit
Utilized IC / Part: TLE9189
Contents: Board(s)
Type: Power Management
Function: Gate Driver
Packaging: Box
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 47566.16 грн |
| EVALKITTLE9189QVWTOBO1 |
Виробник: Infineon Technologies
Description: EVALKITTLE9189QVWTOBO1
Embedded: Yes, MCU, 32-Bit
Utilized IC / Part: TLE9189
Contents: Board(s)
Type: Power Management
Function: Gate Driver
Packaging: Box
Description: EVALKITTLE9189QVWTOBO1
Embedded: Yes, MCU, 32-Bit
Utilized IC / Part: TLE9189
Contents: Board(s)
Type: Power Management
Function: Gate Driver
Packaging: Box
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 47566.16 грн |
| XC2268I136F128LRAAKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 16/32BIT 1MB FLASH
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 90K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x12b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
Description: IC MCU 16/32BIT 1MB FLASH
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 90K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x12b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 1000 шт
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| BTS141AKSA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 25mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Description: IC PWR SWITCH
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 25mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
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| BTS141TCAUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 25mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-3-2
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Description: IC PWR SWITCH
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 25mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-3-2
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
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| XDPP1148100BXUMA1 |
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на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 223.13 грн |
| XDPP1148100BXUMA1 |
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на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| AUIPS1011S |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Input Type: Non-Inverting
Rds On (Typ): 10mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Qualification: AEC-Q100
Grade: Automotive
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: D2PAK
Ratio - Input:Output: 1:1
Current - Output (Max): 6.5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 36V (Max)
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Input Type: Non-Inverting
Rds On (Typ): 10mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Qualification: AEC-Q100
Grade: Automotive
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: D2PAK
Ratio - Input:Output: 1:1
Current - Output (Max): 6.5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 36V (Max)
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| CY8C20534-12PVXIT |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 28SSOP
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Number of I/O: 24
Supplier Device Package: 28-SSOP
Peripherals: LVD, POR, WDT
Connectivity: I2C, SPI
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Core Size: 8-Bit
Core Processor: M8C
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 512 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 12MHz
Mounting Type: Surface Mount
Description: IC MCU 8BIT 8KB FLASH 28SSOP
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Number of I/O: 24
Supplier Device Package: 28-SSOP
Peripherals: LVD, POR, WDT
Connectivity: I2C, SPI
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Core Size: 8-Bit
Core Processor: M8C
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 512 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 12MHz
Mounting Type: Surface Mount
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| XMC1403Q040X0064AAXTMA1 |
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Виробник: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 27
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 27
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Мінімальне замовлення: 5000 шт
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| XMC1403Q048X0064AAXTMA1 |
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Виробник: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Number of I/O: 34
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Number of I/O: 34
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Мінімальне замовлення: 2500 шт
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| XMC1403Q040X0128AAXTMA1 |
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Виробник: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 27
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 27
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Мінімальне замовлення: 5000 шт
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| XMC1403Q064X0064AAXTMA1 |
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Виробник: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-64-6
Number of I/O: 48
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-64-6
Number of I/O: 48
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Мінімальне замовлення: 2500 шт
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| XMC1403Q048X0128AAXTMA1 |
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Виробник: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Number of I/O: 34
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Number of I/O: 34
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Мінімальне замовлення: 2500 шт
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| PEF 4268 T V1.2 |
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Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE PDSO-24
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: PG-DSO-24-8
Number of Circuits: 1
Description: IC TELECOM INTERFACE PDSO-24
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: PG-DSO-24-8
Number of Circuits: 1
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Мінімальне замовлення: 1000 шт
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| IRSM515-044PA |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 3A 23SOP
Features: Bootstrap Circuit
Packaging: Bulk
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 800mOhm
Applications: AC Motors
Current - Output / Channel: 3A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-SOP
Fault Protection: UVLO
Load Type: Inductive
Description: IC HALF BRIDGE DRIVER 3A 23SOP
Features: Bootstrap Circuit
Packaging: Bulk
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 800mOhm
Applications: AC Motors
Current - Output / Channel: 3A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-SOP
Fault Protection: UVLO
Load Type: Inductive
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 68+ | 297.17 грн |
| IRSM515-044PA |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 3A 23SOP
Features: Bootstrap Circuit
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 800mOhm
Applications: AC Motors
Current - Output / Channel: 3A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-SOP
Fault Protection: UVLO
Load Type: Inductive
Description: IC HALF BRIDGE DRIVER 3A 23SOP
Features: Bootstrap Circuit
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 800mOhm
Applications: AC Motors
Current - Output / Channel: 3A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-SOP
Fault Protection: UVLO
Load Type: Inductive
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| F3L400R10N3S7FC1BPSA1 |
Виробник: Infineon Technologies
Description: IGBT MODULE 950V 105A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.57V @ 15V, 70A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 950 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 13000 pF @ 25 V
Description: IGBT MODULE 950V 105A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.57V @ 15V, 70A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 950 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 13000 pF @ 25 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 13538.41 грн |
| 10+ | 12229.37 грн |































