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BTM9010EPXUMA1 BTM9010EPXUMA1 Infineon Technologies Infineon-Infineon-BTM901xEP-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01912d365ee4326f Description: BTM9010EPXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5.2A
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 40V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 40V
Supplier Device Package: PG-TSDSO-14
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
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BTM9010EPXUMA1 BTM9010EPXUMA1 Infineon Technologies Infineon-Infineon-BTM901xEP-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01912d365ee4326f Description: BTM9010EPXUMA1
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5.2A
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 40V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 40V
Supplier Device Package: PG-TSDSO-14
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
на замовлення 114 шт:
термін постачання 21-31 дні (днів)
3+141.51 грн
10+99.93 грн
25+90.98 грн
100+76.15 грн
Мінімальне замовлення: 3
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CYW20719B2KUMLGT CYW20719B2KUMLGT Infineon Technologies Infineon-CYW20719_AIROC_Bluetooth_Bluetooth_LE_system_on_chip_Enhanced_low_power-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c85ecb3470185f3d08c7a10d3 Description: IC RF TXRX+MCU 40QFN
Packaging: Cut Tape (CT)
Package / Case: 40-UFQFN Exposed Pad
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 448kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5.5dBm
Protocol: Bluetooth v5.1 + EDR, GLONASS, GPS
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 16
Modulation: 4-DQPSK, 8-DPSK, GFSK, QPSK
Serial Interfaces: GPIO, HCI, I2C, I2S, PWM, SPI, UART
DigiKey Programmable: Not Verified
на замовлення 4995 шт:
термін постачання 21-31 дні (днів)
1+548.04 грн
10+457.62 грн
25+433.16 грн
100+375.00 грн
250+356.15 грн
500+342.84 грн
1000+324.88 грн
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IR2181PBF IR2181PBF Infineon Technologies ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
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IRFI530NPBF IRFI530NPBF Infineon Technologies irfi530npbf.pdf?fileId=5546d462533600a401535624411f1f8c Description: MOSFET N-CH 100V 12A TO220AB FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6.6A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
на замовлення 33320 шт:
термін постачання 21-31 дні (днів)
317+70.37 грн
Мінімальне замовлення: 317
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IRF7470TR IRF7470TR Infineon Technologies IRF7470.pdf Description: MOSFET N-CH 40V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 20 V
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P3000ZL45X168APT8HPSA1 P3000ZL45X168APT8HPSA1 Infineon Technologies Infineon-P3000ZL45X168-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7f2a768a017facf5116e40b2 Description: PRESS PACK IGBT
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3000A
Supplier Device Package: BG-P16826K-1
IGBT Type: Trench
Td (on/off) @ 25°C: 390ns/9.8µs
Switching Energy: 8.5J (on), 18J (off)
Test Condition: 2800V, 3000A, 0.5Ohm, 15V
Gate Charge: 60 µC
Current - Collector (Ic) (Max): 3 kA
Voltage - Collector Emitter Breakdown (Max): 4500 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+556138.68 грн
В кошику  од. на суму  грн.
REFLLC500WFULLGANTOBO1 REFLLC500WFULLGANTOBO1 Infineon Technologies Infineon-REF_LLC_500W_FULLGAN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c93956f500193ac2faadb4a39 Description: REFLLC500WFULLGANTOBO1
Packaging: Box
Voltage - Output: 22V
Contents: Board(s)
Utilized IC / Part: IGC033S101
Main Purpose: DC/DC Converter
Outputs and Type: 1 Isolated Output
Power - Output: 500W
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+20154.71 грн
В кошику  од. на суму  грн.
AUIRFR2607Z AUIRFR2607Z Infineon Technologies auirfr2607z.pdf?fileId=5546d462533600a4015355b217bc146a Description: MOSFET N-CH 75V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Qualification: AEC-Q101
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AUIRFR2607ZTRL AUIRFR2607ZTRL Infineon Technologies AUIRFR2607Z.pdf Description: MOSFET N-CH 75V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Qualification: AEC-Q101
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BSC0996NSATMA1 BSC0996NSATMA1 Infineon Technologies Infineon-BSC0996NS-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101598d26dc516003 Description: MOSFET N-CH 34V 13A TDSON-8-5
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
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MB95F696KNPMC-G-SNERE2 MB95F696KNPMC-G-SNERE2 Infineon Technologies Prod_Selector_Guide_11-25-15.pdf Description: IC MCU 8BIT 36KB FLASH 48LQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 36KB (36K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 45
DigiKey Programmable: Not Verified
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MB95F698KPMC1-G-SNE2 MB95F698KPMC1-G-SNE2 Infineon Technologies download Description: IC MCU 8BIT 60KB FLASH 52LQFP
Packaging: Tray
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 52-LQFP (10x10)
Number of I/O: 45
DigiKey Programmable: Not Verified
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MB95F698KWQN-G-SNE1 MB95F698KWQN-G-SNE1 Infineon Technologies download Description: IC MCU 8BIT 60KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 45
DigiKey Programmable: Not Verified
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MB95F698KPMC1-G-XXX-UNE2 MB95F698KPMC1-G-XXX-UNE2 Infineon Technologies Description: IC MCU 8BIT FLASH 52LQFP
Packaging: Tray
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 52-LQFP (10x10)
Number of I/O: 45
DigiKey Programmable: Not Verified
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CY95F698KNPMC1-G-UNE2 CY95F698KNPMC1-G-UNE2 Infineon Technologies Description: IC MCU 8BIT 60KB FLASH 52LQFP
Packaging: Tray
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 52-LQFP (10x10)
Number of I/O: 45
DigiKey Programmable: Not Verified
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MB95F696KNPMC-G-102-SNE2 MB95F696KNPMC-G-102-SNE2 Infineon Technologies Prod_Selector_Guide_11-25-15.pdf Description: IC MCU 8BIT 36KB FLASH 48LQFP
Packaging: Bulk
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 36KB (36K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 45
DigiKey Programmable: Not Verified
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MB95F698KNPMC-G109SNERE2 MB95F698KNPMC-G109SNERE2 Infineon Technologies Prod_Selector_Guide_11-25-15.pdf Description: IC MCU 8BIT 60KB FLASH 48LQFP
Packaging: Bulk
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 45
DigiKey Programmable: Not Verified
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CY8C9560A-24AXIT CY8C9560A-24AXIT Infineon Technologies Infineon-CY8C9520A_CY8C9540A_CY8C9560A_20-_40-_and_60-Bit_I_O_Expander_with_EEPROM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd16ae2f29&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr Description: IC XPNDR 100KHZ I2C 100TQFP
Features: EEPROM, POR, PWM, WDT
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 60
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Clock Frequency: 100 kHz
Interrupt Output: Yes
Supplier Device Package: 100-TQFP (14x14)
Current - Output Source/Sink: 10mA, 25mA
DigiKey Programmable: Not Verified
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AIMCQ120R030M1TXTMA1 AIMCQ120R030M1TXTMA1 Infineon Technologies AIMCQ120R030M1T_v1.10_en.pdf Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
750+565.86 грн
Мінімальне замовлення: 750
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AIMCQ120R030M1TXTMA1 AIMCQ120R030M1TXTMA1 Infineon Technologies AIMCQ120R030M1T_v1.10_en.pdf Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
на замовлення 1541 шт:
термін постачання 21-31 дні (днів)
1+1088.35 грн
10+737.93 грн
100+666.96 грн
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IGC033S101XTMA1 IGC033S101XTMA1 Infineon Technologies Infineon-IGC033S101-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018fa5cc78577031 Description: MV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-VSON-6-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
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IGC033S101XTMA1 IGC033S101XTMA1 Infineon Technologies Infineon-IGC033S101-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018fa5cc78577031 Description: MV GAN DISCRETES
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-VSON-6-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
на замовлення 4430 шт:
термін постачання 21-31 дні (днів)
2+316.47 грн
10+200.61 грн
100+141.61 грн
500+121.45 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IGC037S12S1XTMA1 IGC037S12S1XTMA1 Infineon Technologies DS_IGC037S12S1_1_1.pdf Description: MV GAN DISCRETES
Packaging: Cut Tape (CT)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 18A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 7mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.5V, -4V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 60 V
на замовлення 3220 шт:
термін постачання 21-31 дні (днів)
2+316.47 грн
10+200.61 грн
100+141.61 грн
500+121.45 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IGC037S12S1XTMA1 IGC037S12S1XTMA1 Infineon Technologies DS_IGC037S12S1_1_1.pdf Description: MV GAN DISCRETES
Packaging: Tube
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 18A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 7mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.5V, -4V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 60 V
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IGC033S10S1XTMA1 IGC033S10S1XTMA1 Infineon Technologies Infineon-IGC033S10S1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018fa5cc75be702e Description: MV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
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IGC033S10S1XTMA1 IGC033S10S1XTMA1 Infineon Technologies Infineon-IGC033S10S1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018fa5cc75be702e Description: MV GAN DISCRETES
Packaging: Cut Tape (CT)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
на замовлення 432 шт:
термін постачання 21-31 дні (днів)
2+318.19 грн
10+202.09 грн
100+142.66 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
EVAL7136U100VGANCTOBO1 EVAL7136U100VGANCTOBO1 Infineon Technologies Infineon-EVAL_7136U_100V_GANC_Half-bridge_evaluation_board_with_100V_CoolGaN_power_transistor_and_EiceDRIVER_1EDN7136U_gatedriver_userguide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801916f67a9bf5897 Description: EVAL BOARD 1EDN7136U IGC033S10S1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1EDN7136U, IGC033S10S1
Primary Attributes: Isolated
Embedded: No
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+10214.58 грн
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EVAL7126G100VGANCTOBO1 EVAL7126G100VGANCTOBO1 Infineon Technologies Infineon-EVAL_7126G_100V_GANC_Half-bridge_evaluation_board_with_100V_CoolGaN_power_transistor_and_EiceDRIVER_1EDN7126G_gatedrive_userguide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c914a3ac80191745abf2f574c Description: EVAL BOARD 1EDN7126G IGC033S10S1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1EDN7126G, IGC033S10S1
Primary Attributes: Isolated
Embedded: No
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+10214.58 грн
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REFIBC1600WGANTOBO1 REFIBC1600WGANTOBO1 Infineon Technologies Infineon-Scalable_regulated_intermediate_bus_converter_with_CoolGaN_100_V_power_transistors_REF_IBC_1600W_GAN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b001936594b9525f7b Description: REFIBC1600WGANTOBO1
Packaging: Box
Voltage - Output: 12V
Voltage - Input: 36V ~ 60V
Contents: Board(s)
Utilized IC / Part: IGC033S10S1
Main Purpose: DC/DC Converter
Outputs and Type: 1 Isolated Output
Power - Output: 1.6kW
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+29167.72 грн
В кошику  од. на суму  грн.
IMCQ120R007M2HXTMA1 IMCQ120R007M2HXTMA1 Infineon Technologies Infineon-IMCQ120R007M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194da4fae634243 Description: SICFET N-CH 1200V 257A 22PWRBSOP
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 257A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 93A, 18V
Power Dissipation (Max): 1172W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 29.1mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 197.2 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 8440 pF @ 800 V
на замовлення 396 шт:
термін постачання 21-31 дні (днів)
1+2518.36 грн
10+1938.19 грн
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IRF3205ZLPBF IRF3205ZLPBF Infineon Technologies irf3205zpbf.pdf?fileId=5546d462533600a4015355df030c190f Description: MOSFET N-CH 55V 75A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
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CY8C4146LDAS273TXUMA1 Infineon Technologies infineon-automotive-psoc-4100s-plus-datasheet-en-09018a9080860d3f.pdf Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
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CY8C4147AZI-S453T CY8C4147AZI-S453T Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1+391.94 грн
10+288.07 грн
25+265.77 грн
100+226.39 грн
250+215.42 грн
500+208.80 грн
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TLE49421HALA1 TLE49421HALA1 Infineon Technologies TLE4942-1%2C1C.pdf Description: MAG SWITCH SPEC PURP SSO-2-2
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
Grade: Automotive
Qualification: AEC-Q100
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
129+171.32 грн
Мінімальне замовлення: 129
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MB3793-42PNF-G-JN-ER-6E1 MB3793-42PNF-G-JN-ER-6E1 Infineon Technologies download Description: IC SUPERVISOR 1 CHANNEL 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS Inverted
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 80ms Minimum
Voltage - Threshold: 4.2V
Supplier Device Package: 8-SOP
DigiKey Programmable: Not Verified
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IRF9383MTRPBF IRF9383MTRPBF Infineon Technologies irf9383mpbf.pdf?fileId=5546d462533600a40153561169a11dab Description: MOSFET P-CH 30V 22A DIRECTFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 22A, 10V
Power Dissipation (Max): 2.1W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 150µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7305 pF @ 15 V
на замовлення 8628 шт:
термін постачання 21-31 дні (днів)
186+116.55 грн
Мінімальне замовлення: 186
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S25FL128SAGMFVR03 S25FL128SAGMFVR03 Infineon Technologies infineon-s25fl128s-s25fl256s-128-mb-16-mb-256-mb-32-mb-fl-s-flash-spi-multi-io-3-v-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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TLE4307D V38 TLE4307D V38 Infineon Technologies TLE4307.pdf Description: IC REG DL CHRPMP/LINEAR DPAK-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 25V
Topology: Charge Pump (1), Linear (LDO) (1)
Supplier Device Package: PG-TO252-5-1
Voltage/Current - Output 2: 3.8V, 250mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
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IMDQ75R007M2HXTMA1 IMDQ75R007M2HXTMA1 Infineon Technologies Infineon-IMDQ75R007M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c95d1335f0195eb5bad7f665c Description: IMDQ75R007M2HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 131.5A, 20V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 28.9mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 840 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5922 pF @ 500 V
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IMDQ75R007M2HXTMA1 IMDQ75R007M2HXTMA1 Infineon Technologies Infineon-IMDQ75R007M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c95d1335f0195eb5bad7f665c Description: IMDQ75R007M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 131.5A, 20V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 28.9mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 840 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5922 pF @ 500 V
на замовлення 251 шт:
термін постачання 21-31 дні (днів)
1+2152.69 грн
10+1591.39 грн
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IPQC60T010S7XTMA1 IPQC60T010S7XTMA1 Infineon Technologies Infineon-IPQC60T010S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d01921e4a0a0e3a3e Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.06mA
Supplier Device Package: PG-HDSOP-22-101
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V
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IPQC60T010S7XTMA1 IPQC60T010S7XTMA1 Infineon Technologies Infineon-IPQC60T010S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d01921e4a0a0e3a3e Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.06mA
Supplier Device Package: PG-HDSOP-22-101
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V
на замовлення 740 шт:
термін постачання 21-31 дні (днів)
1+1517.18 грн
10+1167.38 грн
25+1094.00 грн
100+950.94 грн
250+914.85 грн
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CY7C1370D-200BGXC CY7C1370D-200BGXC Infineon Technologies CY7C1370%2C72D.pdf Description: IC SRAM 18MBIT PARALLEL 119PBGA
Packaging: Tray
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1370D-200BZC CY7C1370D-200BZC Infineon Technologies download Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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S25FL512SDSBHV210 S25FL512SDSBHV210 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S25FL512SDSBHV213 S25FL512SDSBHV213 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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TLE4973R050T5US0010XUMA1 TLE4973R050T5US0010XUMA1 Infineon Technologies TLE4973-RyyyT5-S0010_Rev3.10_11-30-23.pdf Description: CURRENT SENSOR HE PG-TISON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+269.88 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLE4973R050T5US0010XUMA1 TLE4973R050T5US0010XUMA1 Infineon Technologies TLE4973-RyyyT5-S0010_Rev3.10_11-30-23.pdf Description: CURRENT SENSOR HE PG-TISON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
1+411.67 грн
5+356.62 грн
10+341.67 грн
25+303.98 грн
50+292.57 грн
100+282.13 грн
500+261.37 грн
В кошику  од. на суму  грн.
TC397XX256F300SBDKXUMA2 TC397XX256F300SBDKXUMA2 Infineon Technologies Infineon-TC39x_Addendum-DataSheet-v01_07-EN.pdf?fileId=5546d4626f229553016fb316c2c6746e Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.52M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit 10-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+4137.75 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
TC397XX256F300SBDKXUMA2 TC397XX256F300SBDKXUMA2 Infineon Technologies Infineon-TC39x_Addendum-DataSheet-v01_07-EN.pdf?fileId=5546d4626f229553016fb316c2c6746e Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.52M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit 10-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
на замовлення 1133 шт:
термін постачання 21-31 дні (днів)
1+5923.77 грн
10+4748.08 грн
25+4509.25 грн
100+3985.54 грн
В кошику  од. на суму  грн.
IR2135JPBF IR2135JPBF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
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CYAT847AZS88-42002 CYAT847AZS88-42002 Infineon Technologies Infineon-CYAT837AZA98-42002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ef647900bf5 Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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IPB175N20NM6ATMA1 IPB175N20NM6ATMA1 Infineon Technologies Infineon-IPB175N20NM6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c97a5967c0197ab012a682d11 Description: IPB175N20NM6ATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 38A, 15V
Power Dissipation (Max): 3.8W (Ta), 203W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 105µA
Supplier Device Package: PG-TO263-3-U01
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 100 V
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IPB175N20NM6ATMA1 IPB175N20NM6ATMA1 Infineon Technologies Infineon-IPB175N20NM6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c97a5967c0197ab012a682d11 Description: IPB175N20NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 38A, 15V
Power Dissipation (Max): 3.8W (Ta), 203W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 105µA
Supplier Device Package: PG-TO263-3-U01
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 100 V
на замовлення 995 шт:
термін постачання 21-31 дні (днів)
2+275.30 грн
10+173.19 грн
100+121.26 грн
500+100.44 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
1ED3142MC12HXUMA1 1ED3142MC12HXUMA1 Infineon Technologies 1ED3120MC12HXUMA1.pdf Description: ISOLATED DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-LDSO-8-1
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 300kV/µs
Propagation Delay tpLH / tpHL (Max): 50ns, 50ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 14V ~ 32V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
1500+61.59 грн
3000+57.83 грн
4500+57.08 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
1ED3142MC12HXUMA1 1ED3142MC12HXUMA1 Infineon Technologies 1ED3120MC12HXUMA1.pdf Description: ISOLATED DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-LDSO-8-1
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 300kV/µs
Propagation Delay tpLH / tpHL (Max): 50ns, 50ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 14V ~ 32V
на замовлення 4672 шт:
термін постачання 21-31 дні (днів)
3+120.93 грн
10+85.15 грн
25+77.43 грн
100+64.65 грн
250+60.82 грн
500+58.51 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ICE5GR2280AGXUMA1 ICE5GR2280AGXUMA1 Infineon Technologies Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 125kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Power (Watts): 23 W
на замовлення 76 шт:
термін постачання 21-31 дні (днів)
76+290.43 грн
Мінімальне замовлення: 76
В кошику  од. на суму  грн.
BTS700201ESPEVALBRDTOBO1 Infineon Technologies BTS700201ESPEVALBRDTOBO1.pdf Description: BTS70020-1ESP EVALBRD
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS70020-1ESP
Embedded: No
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+7964.11 грн
В кошику  од. на суму  грн.
IMT65R015M2HXUMA1 IMT65R015M2HXUMA1 Infineon Technologies Infineon-IMT65R015M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934dfcb7ba3ba6 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 64.2A, 20V
Power Dissipation (Max): 535W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
на замовлення 1020 шт:
термін постачання 21-31 дні (днів)
1+1128.66 грн
10+766.34 грн
100+695.68 грн
В кошику  од. на суму  грн.
BTM9010EPXUMA1 Infineon-Infineon-BTM901xEP-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01912d365ee4326f
BTM9010EPXUMA1
Виробник: Infineon Technologies
Description: BTM9010EPXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5.2A
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 40V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 40V
Supplier Device Package: PG-TSDSO-14
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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BTM9010EPXUMA1 Infineon-Infineon-BTM901xEP-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01912d365ee4326f
BTM9010EPXUMA1
Виробник: Infineon Technologies
Description: BTM9010EPXUMA1
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5.2A
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 40V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 40V
Supplier Device Package: PG-TSDSO-14
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
на замовлення 114 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+141.51 грн
10+99.93 грн
25+90.98 грн
100+76.15 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CYW20719B2KUMLGT Infineon-CYW20719_AIROC_Bluetooth_Bluetooth_LE_system_on_chip_Enhanced_low_power-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c85ecb3470185f3d08c7a10d3
CYW20719B2KUMLGT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU 40QFN
Packaging: Cut Tape (CT)
Package / Case: 40-UFQFN Exposed Pad
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 448kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5.5dBm
Protocol: Bluetooth v5.1 + EDR, GLONASS, GPS
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 16
Modulation: 4-DQPSK, 8-DPSK, GFSK, QPSK
Serial Interfaces: GPIO, HCI, I2C, I2S, PWM, SPI, UART
DigiKey Programmable: Not Verified
на замовлення 4995 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+548.04 грн
10+457.62 грн
25+433.16 грн
100+375.00 грн
250+356.15 грн
500+342.84 грн
1000+324.88 грн
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IR2181PBF ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce
IR2181PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
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IRFI530NPBF irfi530npbf.pdf?fileId=5546d462533600a401535624411f1f8c
IRFI530NPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 12A TO220AB FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6.6A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
на замовлення 33320 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
317+70.37 грн
Мінімальне замовлення: 317
В кошику  од. на суму  грн.
IRF7470TR IRF7470.pdf
IRF7470TR
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 20 V
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P3000ZL45X168APT8HPSA1 Infineon-P3000ZL45X168-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7f2a768a017facf5116e40b2
P3000ZL45X168APT8HPSA1
Виробник: Infineon Technologies
Description: PRESS PACK IGBT
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3000A
Supplier Device Package: BG-P16826K-1
IGBT Type: Trench
Td (on/off) @ 25°C: 390ns/9.8µs
Switching Energy: 8.5J (on), 18J (off)
Test Condition: 2800V, 3000A, 0.5Ohm, 15V
Gate Charge: 60 µC
Current - Collector (Ic) (Max): 3 kA
Voltage - Collector Emitter Breakdown (Max): 4500 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+556138.68 грн
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REFLLC500WFULLGANTOBO1 Infineon-REF_LLC_500W_FULLGAN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c93956f500193ac2faadb4a39
REFLLC500WFULLGANTOBO1
Виробник: Infineon Technologies
Description: REFLLC500WFULLGANTOBO1
Packaging: Box
Voltage - Output: 22V
Contents: Board(s)
Utilized IC / Part: IGC033S101
Main Purpose: DC/DC Converter
Outputs and Type: 1 Isolated Output
Power - Output: 500W
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+20154.71 грн
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AUIRFR2607Z auirfr2607z.pdf?fileId=5546d462533600a4015355b217bc146a
AUIRFR2607Z
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Qualification: AEC-Q101
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AUIRFR2607ZTRL AUIRFR2607Z.pdf
AUIRFR2607ZTRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Qualification: AEC-Q101
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BSC0996NSATMA1 Infineon-BSC0996NS-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101598d26dc516003
BSC0996NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 34V 13A TDSON-8-5
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
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MB95F696KNPMC-G-SNERE2 Prod_Selector_Guide_11-25-15.pdf
MB95F696KNPMC-G-SNERE2
Виробник: Infineon Technologies
Description: IC MCU 8BIT 36KB FLASH 48LQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 36KB (36K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 45
DigiKey Programmable: Not Verified
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MB95F698KPMC1-G-SNE2 download
MB95F698KPMC1-G-SNE2
Виробник: Infineon Technologies
Description: IC MCU 8BIT 60KB FLASH 52LQFP
Packaging: Tray
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 52-LQFP (10x10)
Number of I/O: 45
DigiKey Programmable: Not Verified
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MB95F698KWQN-G-SNE1 download
MB95F698KWQN-G-SNE1
Виробник: Infineon Technologies
Description: IC MCU 8BIT 60KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 45
DigiKey Programmable: Not Verified
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MB95F698KPMC1-G-XXX-UNE2
MB95F698KPMC1-G-XXX-UNE2
Виробник: Infineon Technologies
Description: IC MCU 8BIT FLASH 52LQFP
Packaging: Tray
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 52-LQFP (10x10)
Number of I/O: 45
DigiKey Programmable: Not Verified
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CY95F698KNPMC1-G-UNE2
CY95F698KNPMC1-G-UNE2
Виробник: Infineon Technologies
Description: IC MCU 8BIT 60KB FLASH 52LQFP
Packaging: Tray
Package / Case: 52-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 52-LQFP (10x10)
Number of I/O: 45
DigiKey Programmable: Not Verified
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MB95F696KNPMC-G-102-SNE2 Prod_Selector_Guide_11-25-15.pdf
MB95F696KNPMC-G-102-SNE2
Виробник: Infineon Technologies
Description: IC MCU 8BIT 36KB FLASH 48LQFP
Packaging: Bulk
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 36KB (36K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 45
DigiKey Programmable: Not Verified
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MB95F698KNPMC-G109SNERE2 Prod_Selector_Guide_11-25-15.pdf
MB95F698KNPMC-G109SNERE2
Виробник: Infineon Technologies
Description: IC MCU 8BIT 60KB FLASH 48LQFP
Packaging: Bulk
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 45
DigiKey Programmable: Not Verified
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CY8C9560A-24AXIT Infineon-CY8C9520A_CY8C9540A_CY8C9560A_20-_40-_and_60-Bit_I_O_Expander_with_EEPROM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd16ae2f29&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr
CY8C9560A-24AXIT
Виробник: Infineon Technologies
Description: IC XPNDR 100KHZ I2C 100TQFP
Features: EEPROM, POR, PWM, WDT
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 60
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Clock Frequency: 100 kHz
Interrupt Output: Yes
Supplier Device Package: 100-TQFP (14x14)
Current - Output Source/Sink: 10mA, 25mA
DigiKey Programmable: Not Verified
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AIMCQ120R030M1TXTMA1 AIMCQ120R030M1T_v1.10_en.pdf
AIMCQ120R030M1TXTMA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
750+565.86 грн
Мінімальне замовлення: 750
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AIMCQ120R030M1TXTMA1 AIMCQ120R030M1T_v1.10_en.pdf
AIMCQ120R030M1TXTMA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
на замовлення 1541 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1088.35 грн
10+737.93 грн
100+666.96 грн
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IGC033S101XTMA1 Infineon-IGC033S101-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018fa5cc78577031
IGC033S101XTMA1
Виробник: Infineon Technologies
Description: MV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-VSON-6-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
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IGC033S101XTMA1 Infineon-IGC033S101-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018fa5cc78577031
IGC033S101XTMA1
Виробник: Infineon Technologies
Description: MV GAN DISCRETES
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-VSON-6-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
на замовлення 4430 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+316.47 грн
10+200.61 грн
100+141.61 грн
500+121.45 грн
Мінімальне замовлення: 2
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IGC037S12S1XTMA1 DS_IGC037S12S1_1_1.pdf
IGC037S12S1XTMA1
Виробник: Infineon Technologies
Description: MV GAN DISCRETES
Packaging: Cut Tape (CT)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 18A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 7mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.5V, -4V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 60 V
на замовлення 3220 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+316.47 грн
10+200.61 грн
100+141.61 грн
500+121.45 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IGC037S12S1XTMA1 DS_IGC037S12S1_1_1.pdf
IGC037S12S1XTMA1
Виробник: Infineon Technologies
Description: MV GAN DISCRETES
Packaging: Tube
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 18A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 7mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.5V, -4V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 60 V
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IGC033S10S1XTMA1 Infineon-IGC033S10S1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018fa5cc75be702e
IGC033S10S1XTMA1
Виробник: Infineon Technologies
Description: MV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
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IGC033S10S1XTMA1 Infineon-IGC033S10S1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018fa5cc75be702e
IGC033S10S1XTMA1
Виробник: Infineon Technologies
Description: MV GAN DISCRETES
Packaging: Cut Tape (CT)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
на замовлення 432 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+318.19 грн
10+202.09 грн
100+142.66 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
EVAL7136U100VGANCTOBO1 Infineon-EVAL_7136U_100V_GANC_Half-bridge_evaluation_board_with_100V_CoolGaN_power_transistor_and_EiceDRIVER_1EDN7136U_gatedriver_userguide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801916f67a9bf5897
EVAL7136U100VGANCTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD 1EDN7136U IGC033S10S1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1EDN7136U, IGC033S10S1
Primary Attributes: Isolated
Embedded: No
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+10214.58 грн
В кошику  од. на суму  грн.
EVAL7126G100VGANCTOBO1 Infineon-EVAL_7126G_100V_GANC_Half-bridge_evaluation_board_with_100V_CoolGaN_power_transistor_and_EiceDRIVER_1EDN7126G_gatedrive_userguide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c914a3ac80191745abf2f574c
EVAL7126G100VGANCTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD 1EDN7126G IGC033S10S1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1EDN7126G, IGC033S10S1
Primary Attributes: Isolated
Embedded: No
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+10214.58 грн
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REFIBC1600WGANTOBO1 Infineon-Scalable_regulated_intermediate_bus_converter_with_CoolGaN_100_V_power_transistors_REF_IBC_1600W_GAN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b001936594b9525f7b
REFIBC1600WGANTOBO1
Виробник: Infineon Technologies
Description: REFIBC1600WGANTOBO1
Packaging: Box
Voltage - Output: 12V
Voltage - Input: 36V ~ 60V
Contents: Board(s)
Utilized IC / Part: IGC033S10S1
Main Purpose: DC/DC Converter
Outputs and Type: 1 Isolated Output
Power - Output: 1.6kW
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+29167.72 грн
В кошику  од. на суму  грн.
IMCQ120R007M2HXTMA1 Infineon-IMCQ120R007M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194da4fae634243
IMCQ120R007M2HXTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 257A 22PWRBSOP
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 257A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 93A, 18V
Power Dissipation (Max): 1172W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 29.1mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 197.2 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 8440 pF @ 800 V
на замовлення 396 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2518.36 грн
10+1938.19 грн
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IRF3205ZLPBF irf3205zpbf.pdf?fileId=5546d462533600a4015355df030c190f
IRF3205ZLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
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CY8C4146LDAS273TXUMA1 infineon-automotive-psoc-4100s-plus-datasheet-en-09018a9080860d3f.pdf
Виробник: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
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CY8C4147AZI-S453T Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4147AZI-S453T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+391.94 грн
10+288.07 грн
25+265.77 грн
100+226.39 грн
250+215.42 грн
500+208.80 грн
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TLE49421HALA1 TLE4942-1%2C1C.pdf
TLE49421HALA1
Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-2
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
Grade: Automotive
Qualification: AEC-Q100
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
129+171.32 грн
Мінімальне замовлення: 129
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MB3793-42PNF-G-JN-ER-6E1 download
MB3793-42PNF-G-JN-ER-6E1
Виробник: Infineon Technologies
Description: IC SUPERVISOR 1 CHANNEL 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS Inverted
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 80ms Minimum
Voltage - Threshold: 4.2V
Supplier Device Package: 8-SOP
DigiKey Programmable: Not Verified
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IRF9383MTRPBF irf9383mpbf.pdf?fileId=5546d462533600a40153561169a11dab
IRF9383MTRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 22A DIRECTFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 22A, 10V
Power Dissipation (Max): 2.1W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 150µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7305 pF @ 15 V
на замовлення 8628 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
186+116.55 грн
Мінімальне замовлення: 186
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S25FL128SAGMFVR03 infineon-s25fl128s-s25fl256s-128-mb-16-mb-256-mb-32-mb-fl-s-flash-spi-multi-io-3-v-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGMFVR03
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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TLE4307D V38 TLE4307.pdf
TLE4307D V38
Виробник: Infineon Technologies
Description: IC REG DL CHRPMP/LINEAR DPAK-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 25V
Topology: Charge Pump (1), Linear (LDO) (1)
Supplier Device Package: PG-TO252-5-1
Voltage/Current - Output 2: 3.8V, 250mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
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IMDQ75R007M2HXTMA1 Infineon-IMDQ75R007M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c95d1335f0195eb5bad7f665c
IMDQ75R007M2HXTMA1
Виробник: Infineon Technologies
Description: IMDQ75R007M2HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 131.5A, 20V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 28.9mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 840 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5922 pF @ 500 V
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IMDQ75R007M2HXTMA1 Infineon-IMDQ75R007M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c95d1335f0195eb5bad7f665c
IMDQ75R007M2HXTMA1
Виробник: Infineon Technologies
Description: IMDQ75R007M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 131.5A, 20V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 28.9mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 840 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5922 pF @ 500 V
на замовлення 251 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2152.69 грн
10+1591.39 грн
В кошику  од. на суму  грн.
IPQC60T010S7XTMA1 Infineon-IPQC60T010S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d01921e4a0a0e3a3e
IPQC60T010S7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.06mA
Supplier Device Package: PG-HDSOP-22-101
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V
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IPQC60T010S7XTMA1 Infineon-IPQC60T010S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d01921e4a0a0e3a3e
IPQC60T010S7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.06mA
Supplier Device Package: PG-HDSOP-22-101
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V
на замовлення 740 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1517.18 грн
10+1167.38 грн
25+1094.00 грн
100+950.94 грн
250+914.85 грн
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CY7C1370D-200BGXC CY7C1370%2C72D.pdf
CY7C1370D-200BGXC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 119PBGA
Packaging: Tray
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1370D-200BZC download
CY7C1370D-200BZC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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S25FL512SDSBHV210 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL512SDSBHV210
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S25FL512SDSBHV213 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL512SDSBHV213
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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TLE4973R050T5US0010XUMA1 TLE4973-RyyyT5-S0010_Rev3.10_11-30-23.pdf
TLE4973R050T5US0010XUMA1
Виробник: Infineon Technologies
Description: CURRENT SENSOR HE PG-TISON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+269.88 грн
Мінімальне замовлення: 2500
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TLE4973R050T5US0010XUMA1 TLE4973-RyyyT5-S0010_Rev3.10_11-30-23.pdf
TLE4973R050T5US0010XUMA1
Виробник: Infineon Technologies
Description: CURRENT SENSOR HE PG-TISON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+411.67 грн
5+356.62 грн
10+341.67 грн
25+303.98 грн
50+292.57 грн
100+282.13 грн
500+261.37 грн
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TC397XX256F300SBDKXUMA2 Infineon-TC39x_Addendum-DataSheet-v01_07-EN.pdf?fileId=5546d4626f229553016fb316c2c6746e
TC397XX256F300SBDKXUMA2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.52M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit 10-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+4137.75 грн
Мінімальне замовлення: 1000
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TC397XX256F300SBDKXUMA2 Infineon-TC39x_Addendum-DataSheet-v01_07-EN.pdf?fileId=5546d4626f229553016fb316c2c6746e
TC397XX256F300SBDKXUMA2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.52M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit 10-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
на замовлення 1133 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5923.77 грн
10+4748.08 грн
25+4509.25 грн
100+3985.54 грн
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IR2135JPBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2135JPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
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CYAT847AZS88-42002 Infineon-CYAT837AZA98-42002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ef647900bf5
CYAT847AZS88-42002
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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IPB175N20NM6ATMA1 Infineon-IPB175N20NM6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c97a5967c0197ab012a682d11
IPB175N20NM6ATMA1
Виробник: Infineon Technologies
Description: IPB175N20NM6ATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 38A, 15V
Power Dissipation (Max): 3.8W (Ta), 203W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 105µA
Supplier Device Package: PG-TO263-3-U01
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPB175N20NM6ATMA1 Infineon-IPB175N20NM6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c97a5967c0197ab012a682d11
IPB175N20NM6ATMA1
Виробник: Infineon Technologies
Description: IPB175N20NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 38A, 15V
Power Dissipation (Max): 3.8W (Ta), 203W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 105µA
Supplier Device Package: PG-TO263-3-U01
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 100 V
на замовлення 995 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+275.30 грн
10+173.19 грн
100+121.26 грн
500+100.44 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
1ED3142MC12HXUMA1 1ED3120MC12HXUMA1.pdf
1ED3142MC12HXUMA1
Виробник: Infineon Technologies
Description: ISOLATED DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-LDSO-8-1
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 300kV/µs
Propagation Delay tpLH / tpHL (Max): 50ns, 50ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 14V ~ 32V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+61.59 грн
3000+57.83 грн
4500+57.08 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
1ED3142MC12HXUMA1 1ED3120MC12HXUMA1.pdf
1ED3142MC12HXUMA1
Виробник: Infineon Technologies
Description: ISOLATED DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-LDSO-8-1
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 300kV/µs
Propagation Delay tpLH / tpHL (Max): 50ns, 50ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 14V ~ 32V
на замовлення 4672 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+120.93 грн
10+85.15 грн
25+77.43 грн
100+64.65 грн
250+60.82 грн
500+58.51 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ICE5GR2280AGXUMA1 Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6
ICE5GR2280AGXUMA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 125kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Power (Watts): 23 W
на замовлення 76 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
76+290.43 грн
Мінімальне замовлення: 76
В кошику  од. на суму  грн.
BTS700201ESPEVALBRDTOBO1 BTS700201ESPEVALBRDTOBO1.pdf
Виробник: Infineon Technologies
Description: BTS70020-1ESP EVALBRD
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS70020-1ESP
Embedded: No
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7964.11 грн
В кошику  од. на суму  грн.
IMT65R015M2HXUMA1 Infineon-IMT65R015M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934dfcb7ba3ba6
IMT65R015M2HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 64.2A, 20V
Power Dissipation (Max): 535W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
на замовлення 1020 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1128.66 грн
10+766.34 грн
100+695.68 грн
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