| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| MIXA60WB1200TEH | IXYS |
 Category: IGBT modulesDescription: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 60A Application: motors; photovoltaics Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Power dissipation: 290W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Pulsed collector current: 150A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Case: E3-Pack Gate-emitter voltage: ±20V Collector current: 60A |
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| MIXA80WB1200TEH | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 84A Application: motors; photovoltaics Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Power dissipation: 390W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Pulsed collector current: 225A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Case: E3-Pack Gate-emitter voltage: ±20V Collector current: 84A |
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IXFH60N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 60A; 1040W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 60A Power dissipation: 1.04kW Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
на замовлення 230 шт: термін постачання 21-30 дні (днів) |
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IXFQ60N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 60A Power dissipation: 1.04kW Case: TO3P On-state resistance: 0.11Ω Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhanced |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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IXFT60N50P3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 60A Power dissipation: 1.04kW Case: TO268 On-state resistance: 0.11Ω Mounting: SMD Gate charge: 96nC Kind of package: tube Kind of channel: enhanced |
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MMIX2F60N50P3 | IXYS |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Polar3™; unipolar; 500V; 30A; Idm: 150A Mounting: SMD Drain current: 30A On-state resistance: 0.12Ω Type of transistor: N-MOSFET x2 Power dissipation: 320W Polarisation: unipolar Gate charge: 96nC Technology: HiPerFET™; Polar3™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 150A Case: SMPD Reverse recovery time: 250ns Drain-source voltage: 500V |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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IXFA56N30X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 320W; TO263 Gate charge: 56nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: TO263 Reverse recovery time: 115ns Drain-source voltage: 300V Drain current: 56A On-state resistance: 27mΩ Type of transistor: N-MOSFET Power dissipation: 320W Polarisation: unipolar Kind of package: tube |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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DPF10I600APA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; 600V; 10A Max. off-state voltage: 0.6kV Load current: 10A Type of diode: rectifying |
на замовлення 74 шт: термін постачання 21-30 дні (днів) |
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| MCB40P1200LB-TRR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 55A Case: SMPD-B Gate-source voltage: -5...20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 161nC Kind of package: reel; tape Kind of channel: enhanced Semiconductor structure: double series |
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| MCB40P1200LB-TUB | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B Technology: SiC Case: SMPD-B Mounting: SMD On-state resistance: 34mΩ Kind of package: tube Gate charge: 161nC Kind of channel: enhanced Gate-source voltage: -5...20V Drain-source voltage: 1.2kV Drain current: 55A Type of transistor: N-MOSFET Semiconductor structure: double series Polarisation: unipolar |
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| MCB60I1200TZ-TUB | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70A; TO268AAHV Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 70A Case: TO268AAHV On-state resistance: 25mΩ Mounting: SMD Gate charge: 160C Kind of package: tube Kind of channel: enhanced |
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| MCB60P1200TLB-TRR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 62A; SMPD-B Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 62A Case: SMPD-B On-state resistance: 25mΩ Mounting: SMD Gate charge: 161nC Kind of package: reel; tape Kind of channel: enhanced Semiconductor structure: double series |
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| MCB60P1200TLB-TUB | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 62A; SMPD-B Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 62A Case: SMPD-B On-state resistance: 25mΩ Mounting: SMD Gate charge: 161nC Kind of package: tube Kind of channel: enhanced Semiconductor structure: double series |
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DNA30EM2200PZ-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 2.2kV; 30A; TO263ABHV; Ufmax: 1.24V; 210W Max. forward impulse current: 315A Kind of package: tube Type of diode: rectifying Semiconductor structure: single diode Load current: 30A Max. forward voltage: 1.24V Max. off-state voltage: 2.2kV Case: TO263ABHV Features of semiconductor devices: high voltage Mounting: SMD Power dissipation: 210W |
на замовлення 61 шт: термін постачання 21-30 дні (днів) |
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IX9915N | IXYS |
Category: Integrated circuits - others Description: IC: driver; error amplifier and Darlington transistor; SO8; 20mA Kind of package: tube Mounting: SMD Supply voltage: 1.3...12.5V DC Collector-emitter voltage: 350V Output current: 20mA Type of integrated circuit: driver Reference voltage: 1.299V Case: SO8 Kind of integrated circuit: error amplifier and Darlington transistor Collector current: 0.2A |
на замовлення 275 шт: термін постачання 21-30 дні (днів) |
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IX4310TTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SOT23-5; -2÷2A; Ch: 2; 5÷24V Type of integrated circuit: driver Case: SOT23-5 Mounting: SMD Kind of package: reel; tape Number of channels: 2 Supply voltage: 5...24V Kind of output: non-inverting Kind of integrated circuit: gate driver; low-side Operating temperature: -40...125°C Output current: -2...2A |
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CS20-16IO1 | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.6kV; Ifmax: 31A; 20A; Igt: 50mA; TO247AD; THT; tube Mounting: THT Max. off-state voltage: 1.6kV Max. load current: 31A Load current: 20A Gate current: 50mA Max. forward impulse current: 260A Kind of package: tube Type of thyristor: thyristor Case: TO247AD |
на замовлення 204 шт: термін постачання 21-30 дні (днів) |
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DSEC240-04A | IXYS |
 Category: Diode modulesDescription: Module: diode; common cathode; 400V; If: 120Ax2; SOT227UI; Ufmax: 1V Max. off-state voltage: 0.4kV Max. forward voltage: 1V Load current: 120A x2 Semiconductor structure: common cathode Max. forward impulse current: 2kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode Case: SOT227UI |
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DSEC240-06A | IXYS |
Category: Diode modules Description: Module: diode; common cathode; 600V; If: 120Ax2; SOT227UI; Ifsm: 2kA Max. off-state voltage: 0.6kV Max. forward voltage: 1.26V Load current: 120A x2 Semiconductor structure: common cathode Max. forward impulse current: 2kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode Case: SOT227UI |
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IXTQ16N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO3P Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 300W Case: TO3P Gate-source voltage: ±30V On-state resistance: 0.4Ω Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 400ns |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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CPC3703CTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 0.36A Power dissipation: 1.1W Case: SOT89 Gate-source voltage: ±15V On-state resistance: 4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depleted |
на замовлення 517 шт: термін постачання 21-30 дні (днів) |
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CPC3708CTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.8W; SOT89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 350V Drain current: 0.13A Power dissipation: 1.8W Case: SOT89 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depleted |
на замовлення 4000 шт: термін постачання 21-30 дні (днів) |
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CPC3730CTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 350V Drain current: 0.14A Power dissipation: 1.4W Case: SOT89 Gate-source voltage: ±15V On-state resistance: 35Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depleted |
на замовлення 33 шт: термін постачання 21-30 дні (днів) |
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MCNA40P2200TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 40A; TO240AA; Ufmax: 1.74V Case: TO240AA Load current: 40A Max. forward voltage: 1.74V Max. off-state voltage: 2.2kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Semiconductor structure: double series Gate current: 70/150mA |
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MCNA55P2200TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 55A; TO240AA; Ufmax: 1.56V Case: TO240AA Load current: 55A Max. forward voltage: 1.56V Max. off-state voltage: 2.2kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Semiconductor structure: double series Gate current: 95/200mA |
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MCNA75P2200TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 75A; TO240AA; Ufmax: 1.58V Case: TO240AA Load current: 75A Max. forward voltage: 1.58V Max. off-state voltage: 2.2kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Semiconductor structure: double series Gate current: 95/200mA |
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MCNA95P2200TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 95A; TO240AA; Ufmax: 1.63V Case: TO240AA Load current: 95A Max. forward voltage: 1.63V Max. off-state voltage: 2.2kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Semiconductor structure: double series Gate current: 150/200mA |
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MDNA50P2200TG | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 50A; TO240AA; Ufmax: 1.09V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 50A Case: TO240AA Max. forward voltage: 1.09V Max. forward impulse current: 850A Electrical mounting: screw Mechanical mounting: screw |
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MCNA120P2200TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 120A; TO240AA; screw Case: TO240AA Load current: 120A Max. forward voltage: 1.78V Max. off-state voltage: 2.2kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Semiconductor structure: double series Gate current: 100/200mA |
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| MCNA150P2200YA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 150A; Y4-M6; Ufmax: 1.51V Case: Y4-M6 Load current: 150A Max. forward voltage: 1.51V Max. off-state voltage: 2.2kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Semiconductor structure: double series Gate current: 150/200mA |
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| MCNA180P2200YA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 180A; Y4-M6; Ufmax: 1.51V Case: Y4-M6 Load current: 180A Max. forward voltage: 1.51V Max. off-state voltage: 2.2kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Semiconductor structure: double series Gate current: 150/200mA |
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| MCNA220P2200YA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 220A; Y4-M6; Ufmax: 1.53V Case: Y4-M6 Load current: 220A Max. forward voltage: 1.53V Max. off-state voltage: 2.2kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Semiconductor structure: double series Gate current: 150/200mA |
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| MCNA650P2200CA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 650A; ComPack; screw Case: ComPack Load current: 650A Max. forward voltage: 1.59V Max. off-state voltage: 2.2kV Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor Semiconductor structure: double series Gate current: 300/400mA |
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MDNA140P2200TG | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 140A; TO240AA; Ufmax: 1.11V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 140A Case: TO240AA Max. forward voltage: 1.11V Max. forward impulse current: 2.8kA Electrical mounting: screw Mechanical mounting: screw |
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| MDNA300P2200PTSF | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA Type of module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 300A Case: SimBus F Max. forward impulse current: 8kA Electrical mounting: Press-Fit Mechanical mounting: screw |
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| MDNA380P2200KC | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 380A; Y1-CU; Ufmax: 0.93V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 380A Case: Y1-CU Max. forward voltage: 0.93V Max. forward impulse current: 11kA Electrical mounting: screw Mechanical mounting: screw |
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| MDNA425P2200PTSF | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA Type of module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 425A Case: SimBus F Max. forward impulse current: 10kA Electrical mounting: Press-Fit Mechanical mounting: screw |
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| MDNA600P2200PTSF | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA Type of module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 600A Case: SimBus F Max. forward impulse current: 15kA Electrical mounting: Press-Fit Mechanical mounting: screw |
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| MDNA700P2200CC | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 700A; ComPack; Ufmax: 1.05V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 700A Case: ComPack Max. forward voltage: 1.05V Max. forward impulse current: 20kA Electrical mounting: screw Mechanical mounting: screw |
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| MCD255-12io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 250A; Y1-CU; Ufmax: 1.08V; screw Case: Y1-CU Kind of package: bulk Semiconductor structure: double series Max. off-state voltage: 1.2kV Features of semiconductor devices: Kelvin terminal Gate current: 150/220mA Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Threshold on-voltage: 0.8V Max. forward impulse current: 9.2kA Load current: 250A Max. forward voltage: 1.08V Max. load current: 450A |
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| MCD255-14io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 250A; Y1-CU; Ufmax: 1.08V; screw Case: Y1-CU Kind of package: bulk Semiconductor structure: double series Max. off-state voltage: 1.4kV Features of semiconductor devices: Kelvin terminal Gate current: 150/220mA Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Threshold on-voltage: 0.8V Max. forward impulse current: 9.2kA Load current: 250A Max. forward voltage: 1.08V Max. load current: 450A |
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MCD255-16io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 250A; Y1-CU; Ufmax: 1.08V; screw Case: Y1-CU Kind of package: bulk Semiconductor structure: double series Max. off-state voltage: 1.6kV Features of semiconductor devices: Kelvin terminal Gate current: 150/220mA Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Threshold on-voltage: 0.8V Max. forward impulse current: 9.2kA Load current: 250A Max. forward voltage: 1.08V Max. load current: 450A |
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| MCD255-18io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 250A; Y1-CU; Ufmax: 1.08V; screw Case: Y1-CU Kind of package: bulk Semiconductor structure: double series Max. off-state voltage: 1.8kV Features of semiconductor devices: Kelvin terminal Gate current: 150/220mA Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Threshold on-voltage: 0.8V Max. forward impulse current: 9.2kA Load current: 250A Max. forward voltage: 1.08V Max. load current: 450A |
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| MCD310-12io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw Case: Y2-DCB Kind of package: bulk Semiconductor structure: double series Max. off-state voltage: 1.2kV Features of semiconductor devices: Kelvin terminal Gate current: 150/200mA Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Threshold on-voltage: 0.8V Max. forward impulse current: 9.2kA Load current: 320A Max. forward voltage: 1.09V Max. load current: 500A |
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| MCD310-14io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 320A; Y2-DCB; Ufmax: 1.09V; screw Case: Y2-DCB Kind of package: bulk Semiconductor structure: double series Max. off-state voltage: 1.4kV Features of semiconductor devices: Kelvin terminal Gate current: 150/200mA Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Threshold on-voltage: 0.8V Max. forward impulse current: 9.2kA Load current: 320A Max. forward voltage: 1.09V Max. load current: 500A |
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MCD310-16io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 320A; Y2-DCB; Ufmax: 1.09V; screw Case: Y2-DCB Kind of package: bulk Semiconductor structure: double series Max. off-state voltage: 1.6kV Features of semiconductor devices: Kelvin terminal Gate current: 150/200mA Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Threshold on-voltage: 0.8V Max. forward impulse current: 9.2kA Load current: 320A Max. forward voltage: 1.09V Max. load current: 500A |
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| MCD310-18io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 320A; Y2-DCB; Ufmax: 1.09V; screw Case: Y2-DCB Kind of package: bulk Semiconductor structure: double series Max. off-state voltage: 1.8kV Features of semiconductor devices: Kelvin terminal Gate current: 150/200mA Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Threshold on-voltage: 0.8V Max. forward impulse current: 9.2kA Load current: 320A Max. forward voltage: 1.09V Max. load current: 500A |
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| MCD310-22io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw Case: Y2-DCB Kind of package: bulk Semiconductor structure: double series Max. off-state voltage: 2.2kV Features of semiconductor devices: Kelvin terminal Gate current: 150/200mA Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Threshold on-voltage: 0.8V Max. forward impulse current: 9.2kA Load current: 320A Max. forward voltage: 1.09V Max. load current: 500A |
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MCD312-12io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw Case: Y1-CU Max. off-state voltage: 1.2kV Kind of package: bulk Max. forward voltage: 1.06V Load current: 320A Semiconductor structure: double series Gate current: 150/220mA Max. forward impulse current: 9.6kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Threshold on-voltage: 0.8V Max. load current: 520A |
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MCD312-14io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw Case: Y1-CU Max. off-state voltage: 1.4kV Kind of package: bulk Max. forward voltage: 1.06V Load current: 320A Semiconductor structure: double series Gate current: 150/220mA Max. forward impulse current: 9.6kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Threshold on-voltage: 0.8V Max. load current: 520A |
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MCD312-18io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw Case: Y1-CU Max. off-state voltage: 1.8kV Kind of package: bulk Max. forward voltage: 1.06V Load current: 320A Semiconductor structure: double series Gate current: 150/220mA Max. forward impulse current: 9.6kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode-thyristor Features of semiconductor devices: Kelvin terminal Threshold on-voltage: 0.8V Max. load current: 520A |
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MCD44-12IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 49A; TO240AA; Ufmax: 1.34V; bulk Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 49A Case: TO240AA Max. forward voltage: 1.34V Max. forward impulse current: 1.15kA Gate current: 100/200mA Electrical mounting: FASTON connectors; screw Max. load current: 77A Threshold on-voltage: 0.85V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
на замовлення 35 шт: термін постачання 21-30 дні (днів) |
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MCD44-14IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 49A; TO240AA; Ufmax: 1.34V; bulk Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 49A Case: TO240AA Max. forward voltage: 1.34V Max. forward impulse current: 1.15kA Gate current: 100/200mA Electrical mounting: FASTON connectors; screw Max. load current: 77A Threshold on-voltage: 0.85V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD44-16IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 49A; TO240AA; Ufmax: 1.34V; bulk Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 49A Case: TO240AA Max. forward voltage: 1.34V Max. forward impulse current: 1.15kA Gate current: 100/200mA Electrical mounting: FASTON connectors; screw Max. load current: 77A Threshold on-voltage: 0.85V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD44-18IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 49A; TO240AA; Ufmax: 1.34V; bulk Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 49A Case: TO240AA Max. forward voltage: 1.34V Max. forward impulse current: 1.15kA Gate current: 100/200mA Electrical mounting: FASTON connectors; screw Max. load current: 77A Threshold on-voltage: 0.85V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD56-12IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 60A; TO240AA; Ufmax: 1.24V; bulk Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 60A Case: TO240AA Max. forward voltage: 1.24V Max. forward impulse current: 1.5kA Gate current: 100/200mA Electrical mounting: FASTON connectors; screw Max. load current: 100A Threshold on-voltage: 0.85V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD56-14IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.4kV; 60A; TO240AA; Ufmax: 1.24V; bulk Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 60A Case: TO240AA Max. forward voltage: 1.24V Max. forward impulse current: 1.5kA Gate current: 100/200mA Electrical mounting: FASTON connectors; screw Max. load current: 100A Threshold on-voltage: 0.85V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD56-16IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 60A; TO240AA; Ufmax: 1.24V; bulk Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 60A Case: TO240AA Max. forward voltage: 1.24V Max. forward impulse current: 1.5kA Gate current: 100/200mA Electrical mounting: FASTON connectors; screw Max. load current: 100A Threshold on-voltage: 0.85V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD56-18IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.8kV; 60A; TO240AA; Ufmax: 1.24V; bulk Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 60A Case: TO240AA Max. forward voltage: 1.24V Max. forward impulse current: 1.5kA Gate current: 100/200mA Electrical mounting: FASTON connectors; screw Max. load current: 100A Threshold on-voltage: 0.85V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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MCD72-12IO1B | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 85A Case: TO240AA Max. forward voltage: 1.34V Max. forward impulse current: 1.7kA Gate current: 150/200mA Electrical mounting: FASTON connectors; screw Max. load current: 133A Threshold on-voltage: 0.85V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
на замовлення 19 шт: термін постачання 21-30 дні (днів) |
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| MIXA60WB1200TEH |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 60A
Application: motors; photovoltaics
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power dissipation: 290W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 60A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 60A
Application: motors; photovoltaics
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power dissipation: 290W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 60A
товар відсутній
| MIXA80WB1200TEH |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 84A
Application: motors; photovoltaics
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power dissipation: 390W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 84A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 84A
Application: motors; photovoltaics
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Power dissipation: 390W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 84A
товар відсутній
| IXFH60N50P3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 60A; 1040W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 60A; 1040W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
на замовлення 230 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 677.57 грн |
| 2+ | 433.74 грн |
| 6+ | 409.84 грн |
| IXFQ60N50P3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO3P
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO3P
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 17 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 640.48 грн |
| 2+ | 404.92 грн |
| 6+ | 383.13 грн |
| IXFT60N50P3 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| MMIX2F60N50P3 |
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Виробник: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Polar3™; unipolar; 500V; 30A; Idm: 150A
Mounting: SMD
Drain current: 30A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET x2
Power dissipation: 320W
Polarisation: unipolar
Gate charge: 96nC
Technology: HiPerFET™; Polar3™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 150A
Case: SMPD
Reverse recovery time: 250ns
Drain-source voltage: 500V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Polar3™; unipolar; 500V; 30A; Idm: 150A
Mounting: SMD
Drain current: 30A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET x2
Power dissipation: 320W
Polarisation: unipolar
Gate charge: 96nC
Technology: HiPerFET™; Polar3™
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 150A
Case: SMPD
Reverse recovery time: 250ns
Drain-source voltage: 500V
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2252.27 грн |
| 20+ | 2056.95 грн |
| IXFA56N30X3 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 320W; TO263
Gate charge: 56nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
Reverse recovery time: 115ns
Drain-source voltage: 300V
Drain current: 56A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 320W; TO263
Gate charge: 56nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: TO263
Reverse recovery time: 115ns
Drain-source voltage: 300V
Drain current: 56A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
на замовлення 6 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 468.62 грн |
| 3+ | 346.57 грн |
| DPF10I600APA |
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; 600V; 10A
Max. off-state voltage: 0.6kV
Load current: 10A
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; 600V; 10A
Max. off-state voltage: 0.6kV
Load current: 10A
Type of diode: rectifying
на замовлення 74 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 72.41 грн |
| 10+ | 63.97 грн |
| 15+ | 58.35 грн |
| 39+ | 54.83 грн |
| MCB40P1200LB-TRR |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: double series
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Case: SMPD-B
Gate-source voltage: -5...20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: double series
товар відсутній
| MCB40P1200LB-TUB |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Technology: SiC
Case: SMPD-B
Mounting: SMD
On-state resistance: 34mΩ
Kind of package: tube
Gate charge: 161nC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Drain-source voltage: 1.2kV
Drain current: 55A
Type of transistor: N-MOSFET
Semiconductor structure: double series
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; SMPD-B
Technology: SiC
Case: SMPD-B
Mounting: SMD
On-state resistance: 34mΩ
Kind of package: tube
Gate charge: 161nC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Drain-source voltage: 1.2kV
Drain current: 55A
Type of transistor: N-MOSFET
Semiconductor structure: double series
Polarisation: unipolar
товар відсутній
| MCB60I1200TZ-TUB |
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70A; TO268AAHV
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 70A
Case: TO268AAHV
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 160C
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70A; TO268AAHV
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 70A
Case: TO268AAHV
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 160C
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| MCB60P1200TLB-TRR |
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 62A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 62A
Case: SMPD-B
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: double series
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 62A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 62A
Case: SMPD-B
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: double series
товар відсутній
| MCB60P1200TLB-TUB |
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 62A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 62A
Case: SMPD-B
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhanced
Semiconductor structure: double series
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 62A; SMPD-B
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 62A
Case: SMPD-B
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhanced
Semiconductor structure: double series
товар відсутній
| DNA30EM2200PZ-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 2.2kV; 30A; TO263ABHV; Ufmax: 1.24V; 210W
Max. forward impulse current: 315A
Kind of package: tube
Type of diode: rectifying
Semiconductor structure: single diode
Load current: 30A
Max. forward voltage: 1.24V
Max. off-state voltage: 2.2kV
Case: TO263ABHV
Features of semiconductor devices: high voltage
Mounting: SMD
Power dissipation: 210W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 2.2kV; 30A; TO263ABHV; Ufmax: 1.24V; 210W
Max. forward impulse current: 315A
Kind of package: tube
Type of diode: rectifying
Semiconductor structure: single diode
Load current: 30A
Max. forward voltage: 1.24V
Max. off-state voltage: 2.2kV
Case: TO263ABHV
Features of semiconductor devices: high voltage
Mounting: SMD
Power dissipation: 210W
на замовлення 61 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 342.95 грн |
| 3+ | 286.82 грн |
| 4+ | 227.77 грн |
| 10+ | 215.11 грн |
| IX9915N |
|
Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; error amplifier and Darlington transistor; SO8; 20mA
Kind of package: tube
Mounting: SMD
Supply voltage: 1.3...12.5V DC
Collector-emitter voltage: 350V
Output current: 20mA
Type of integrated circuit: driver
Reference voltage: 1.299V
Case: SO8
Kind of integrated circuit: error amplifier and Darlington transistor
Collector current: 0.2A
Category: Integrated circuits - others
Description: IC: driver; error amplifier and Darlington transistor; SO8; 20mA
Kind of package: tube
Mounting: SMD
Supply voltage: 1.3...12.5V DC
Collector-emitter voltage: 350V
Output current: 20mA
Type of integrated circuit: driver
Reference voltage: 1.299V
Case: SO8
Kind of integrated circuit: error amplifier and Darlington transistor
Collector current: 0.2A
на замовлення 275 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 58.29 грн |
| 8+ | 49.21 грн |
| 20+ | 40.77 грн |
| 54+ | 38.66 грн |
| IX4310TTR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOT23-5; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Supply voltage: 5...24V
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Output current: -2...2A
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SOT23-5; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Supply voltage: 5...24V
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
Output current: -2...2A
товар відсутній
| CS20-16IO1 |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 31A; 20A; Igt: 50mA; TO247AD; THT; tube
Mounting: THT
Max. off-state voltage: 1.6kV
Max. load current: 31A
Load current: 20A
Gate current: 50mA
Max. forward impulse current: 260A
Kind of package: tube
Type of thyristor: thyristor
Case: TO247AD
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 31A; 20A; Igt: 50mA; TO247AD; THT; tube
Mounting: THT
Max. off-state voltage: 1.6kV
Max. load current: 31A
Load current: 20A
Gate current: 50mA
Max. forward impulse current: 260A
Kind of package: tube
Type of thyristor: thyristor
Case: TO247AD
на замовлення 204 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 340.68 грн |
| 3+ | 279.79 грн |
| 4+ | 252.37 грн |
| 9+ | 238.31 грн |
| 30+ | 234.1 грн |
| DSEC240-04A | |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 400V; If: 120Ax2; SOT227UI; Ufmax: 1V
Max. off-state voltage: 0.4kV
Max. forward voltage: 1V
Load current: 120A x2
Semiconductor structure: common cathode
Max. forward impulse current: 2kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: SOT227UI
Category: Diode modules
Description: Module: diode; common cathode; 400V; If: 120Ax2; SOT227UI; Ufmax: 1V
Max. off-state voltage: 0.4kV
Max. forward voltage: 1V
Load current: 120A x2
Semiconductor structure: common cathode
Max. forward impulse current: 2kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: SOT227UI
товар відсутній
| DSEC240-06A | |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 120Ax2; SOT227UI; Ifsm: 2kA
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.26V
Load current: 120A x2
Semiconductor structure: common cathode
Max. forward impulse current: 2kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: SOT227UI
Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 120Ax2; SOT227UI; Ifsm: 2kA
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.26V
Load current: 120A x2
Semiconductor structure: common cathode
Max. forward impulse current: 2kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: SOT227UI
товар відсутній
| IXTQ16N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 400ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 378.53 грн |
| CPC3703CTR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.36A
Power dissipation: 1.1W
Case: SOT89
Gate-source voltage: ±15V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depleted
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.36A
Power dissipation: 1.1W
Case: SOT89
Gate-source voltage: ±15V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depleted
на замовлення 517 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 71.16 грн |
| 11+ | 33.04 грн |
| 25+ | 29.17 грн |
| 31+ | 26.36 грн |
| 85+ | 24.89 грн |
| 250+ | 24.46 грн |
| CPC3708CTR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.8W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.8W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depleted
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.13A; 1.8W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.13A
Power dissipation: 1.8W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depleted
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 60.57 грн |
| 11+ | 33.32 грн |
| 25+ | 30.72 грн |
| 33+ | 24.6 грн |
| 91+ | 23.27 грн |
| CPC3730CTR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.14A
Power dissipation: 1.4W
Case: SOT89
Gate-source voltage: ±15V
On-state resistance: 35Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depleted
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.14A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.14A
Power dissipation: 1.4W
Case: SOT89
Gate-source voltage: ±15V
On-state resistance: 35Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depleted
на замовлення 33 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 59.81 грн |
| 10+ | 35.43 грн |
| 25+ | 32.06 грн |
| 33+ | 25.17 грн |
| MCNA40P2200TA |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 40A; TO240AA; Ufmax: 1.74V
Case: TO240AA
Load current: 40A
Max. forward voltage: 1.74V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 70/150mA
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 40A; TO240AA; Ufmax: 1.74V
Case: TO240AA
Load current: 40A
Max. forward voltage: 1.74V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 70/150mA
товар відсутній
| MCNA55P2200TA |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 55A; TO240AA; Ufmax: 1.56V
Case: TO240AA
Load current: 55A
Max. forward voltage: 1.56V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 95/200mA
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 55A; TO240AA; Ufmax: 1.56V
Case: TO240AA
Load current: 55A
Max. forward voltage: 1.56V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 95/200mA
товар відсутній
| MCNA75P2200TA |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 75A; TO240AA; Ufmax: 1.58V
Case: TO240AA
Load current: 75A
Max. forward voltage: 1.58V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 95/200mA
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 75A; TO240AA; Ufmax: 1.58V
Case: TO240AA
Load current: 75A
Max. forward voltage: 1.58V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 95/200mA
товар відсутній
| MCNA95P2200TA |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 95A; TO240AA; Ufmax: 1.63V
Case: TO240AA
Load current: 95A
Max. forward voltage: 1.63V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 150/200mA
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 95A; TO240AA; Ufmax: 1.63V
Case: TO240AA
Load current: 95A
Max. forward voltage: 1.63V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 150/200mA
товар відсутній
| MDNA50P2200TG |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 50A; TO240AA; Ufmax: 1.09V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 50A
Case: TO240AA
Max. forward voltage: 1.09V
Max. forward impulse current: 850A
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 50A; TO240AA; Ufmax: 1.09V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 50A
Case: TO240AA
Max. forward voltage: 1.09V
Max. forward impulse current: 850A
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MCNA120P2200TA |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 120A; TO240AA; screw
Case: TO240AA
Load current: 120A
Max. forward voltage: 1.78V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 100/200mA
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 120A; TO240AA; screw
Case: TO240AA
Load current: 120A
Max. forward voltage: 1.78V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 100/200mA
товар відсутній
| MCNA150P2200YA |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 150A; Y4-M6; Ufmax: 1.51V
Case: Y4-M6
Load current: 150A
Max. forward voltage: 1.51V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 150/200mA
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 150A; Y4-M6; Ufmax: 1.51V
Case: Y4-M6
Load current: 150A
Max. forward voltage: 1.51V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 150/200mA
товар відсутній
| MCNA180P2200YA |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 180A; Y4-M6; Ufmax: 1.51V
Case: Y4-M6
Load current: 180A
Max. forward voltage: 1.51V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 150/200mA
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 180A; Y4-M6; Ufmax: 1.51V
Case: Y4-M6
Load current: 180A
Max. forward voltage: 1.51V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 150/200mA
товар відсутній
| MCNA220P2200YA |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 220A; Y4-M6; Ufmax: 1.53V
Case: Y4-M6
Load current: 220A
Max. forward voltage: 1.53V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 150/200mA
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 220A; Y4-M6; Ufmax: 1.53V
Case: Y4-M6
Load current: 220A
Max. forward voltage: 1.53V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 150/200mA
товар відсутній
| MCNA650P2200CA |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 650A; ComPack; screw
Case: ComPack
Load current: 650A
Max. forward voltage: 1.59V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 300/400mA
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 650A; ComPack; screw
Case: ComPack
Load current: 650A
Max. forward voltage: 1.59V
Max. off-state voltage: 2.2kV
Kind of package: bulk
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Semiconductor structure: double series
Gate current: 300/400mA
товар відсутній
| MDNA140P2200TG |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MDNA300P2200PTSF |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 300A
Case: SimBus F
Max. forward impulse current: 8kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 300A
Case: SimBus F
Max. forward impulse current: 8kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
товар відсутній
| MDNA380P2200KC |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 380A; Y1-CU; Ufmax: 0.93V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 380A
Case: Y1-CU
Max. forward voltage: 0.93V
Max. forward impulse current: 11kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 380A; Y1-CU; Ufmax: 0.93V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 380A
Case: Y1-CU
Max. forward voltage: 0.93V
Max. forward impulse current: 11kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MDNA425P2200PTSF |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 425A
Case: SimBus F
Max. forward impulse current: 10kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 425A
Case: SimBus F
Max. forward impulse current: 10kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
товар відсутній
| MDNA600P2200PTSF |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 600A
Case: SimBus F
Max. forward impulse current: 15kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 600A
Case: SimBus F
Max. forward impulse current: 15kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
товар відсутній
| MDNA700P2200CC |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 700A; ComPack; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 700A
Case: ComPack
Max. forward voltage: 1.05V
Max. forward impulse current: 20kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 700A; ComPack; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 700A
Case: ComPack
Max. forward voltage: 1.05V
Max. forward impulse current: 20kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| MCD255-12io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Case: Y1-CU
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/220mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 250A
Max. forward voltage: 1.08V
Max. load current: 450A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Case: Y1-CU
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/220mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 250A
Max. forward voltage: 1.08V
Max. load current: 450A
товар відсутній
| MCD255-14io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Case: Y1-CU
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/220mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 250A
Max. forward voltage: 1.08V
Max. load current: 450A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Case: Y1-CU
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/220mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 250A
Max. forward voltage: 1.08V
Max. load current: 450A
товар відсутній
| MCD255-16io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Case: Y1-CU
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/220mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 250A
Max. forward voltage: 1.08V
Max. load current: 450A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Case: Y1-CU
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/220mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 250A
Max. forward voltage: 1.08V
Max. load current: 450A
товар відсутній
| MCD255-18io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Case: Y1-CU
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/220mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 250A
Max. forward voltage: 1.08V
Max. load current: 450A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Case: Y1-CU
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/220mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 250A
Max. forward voltage: 1.08V
Max. load current: 450A
товар відсутній
| MCD310-12io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Case: Y2-DCB
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 320A
Max. forward voltage: 1.09V
Max. load current: 500A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Case: Y2-DCB
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 320A
Max. forward voltage: 1.09V
Max. load current: 500A
товар відсутній
| MCD310-14io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Case: Y2-DCB
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 320A
Max. forward voltage: 1.09V
Max. load current: 500A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Case: Y2-DCB
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 320A
Max. forward voltage: 1.09V
Max. load current: 500A
товар відсутній
| MCD310-16io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Case: Y2-DCB
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 320A
Max. forward voltage: 1.09V
Max. load current: 500A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Case: Y2-DCB
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 320A
Max. forward voltage: 1.09V
Max. load current: 500A
товар відсутній
| MCD310-18io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Case: Y2-DCB
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 320A
Max. forward voltage: 1.09V
Max. load current: 500A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Case: Y2-DCB
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 320A
Max. forward voltage: 1.09V
Max. load current: 500A
товар відсутній
| MCD310-22io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Case: Y2-DCB
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 320A
Max. forward voltage: 1.09V
Max. load current: 500A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Case: Y2-DCB
Kind of package: bulk
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Features of semiconductor devices: Kelvin terminal
Gate current: 150/200mA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Threshold on-voltage: 0.8V
Max. forward impulse current: 9.2kA
Load current: 320A
Max. forward voltage: 1.09V
Max. load current: 500A
товар відсутній
| MCD312-12io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.2kV
Kind of package: bulk
Max. forward voltage: 1.06V
Load current: 320A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 9.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Max. load current: 520A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.2kV
Kind of package: bulk
Max. forward voltage: 1.06V
Load current: 320A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 9.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Max. load current: 520A
товар відсутній
| MCD312-14io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.4kV
Kind of package: bulk
Max. forward voltage: 1.06V
Load current: 320A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 9.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Max. load current: 520A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.4kV
Kind of package: bulk
Max. forward voltage: 1.06V
Load current: 320A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 9.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Max. load current: 520A
товар відсутній
| MCD312-18io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.8kV
Kind of package: bulk
Max. forward voltage: 1.06V
Load current: 320A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 9.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Max. load current: 520A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.8kV
Kind of package: bulk
Max. forward voltage: 1.06V
Load current: 320A
Semiconductor structure: double series
Gate current: 150/220mA
Max. forward impulse current: 9.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Threshold on-voltage: 0.8V
Max. load current: 520A
товар відсутній
| MCD44-12IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.15kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 77A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.15kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 77A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
на замовлення 35 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1532.3 грн |
| 2+ | 1344.82 грн |
| MCD44-14IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.15kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 77A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.15kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 77A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD44-16IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.15kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 77A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.15kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 77A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD44-18IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.15kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 77A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 49A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 49A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.15kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 77A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD56-12IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.5kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 100A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.5kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 100A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD56-14IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.5kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 100A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.5kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 100A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD56-16IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.5kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 100A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.5kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 100A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD56-18IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.5kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 100A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.5kA
Gate current: 100/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 100A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товар відсутній
| MCD72-12IO1B |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 85A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.7kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 133A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 85A; TO240AA; Ufmax: 1.34V; bulk
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 85A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 1.7kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 133A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
на замовлення 19 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2024.39 грн |
| 2+ | 1777.16 грн |