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IXXN110N65B4H1 IXXN110N65B4H1 IXYS IXXN110N65B4H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX4™; XPT™
Power dissipation: 750W
Case: SOT227B
Pulsed collector current: 650A
Max. off-state voltage: 650V
Type of semiconductor module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Collector current: 110A
Gate-emitter voltage: ±20V
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IXXN110N65C4H1 IXXN110N65C4H1 IXYS IXXN110N65C4H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 750W
Case: SOT227B
Pulsed collector current: 470A
Max. off-state voltage: 650V
Type of semiconductor module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Collector current: 110A
Gate-emitter voltage: ±20V
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IXXR110N65B4H1 IXXR110N65B4H1 IXYS IXXR110N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 455W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Pulsed collector current: 490A
Collector-emitter voltage: 650V
Gate charge: 183nC
Turn-on time: 65ns
Turn-off time: 250ns
Collector current: 70A
Gate-emitter voltage: ±20V
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IXXX110N65B4H1 IXXX110N65B4H1 IXYS IXX_110N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 880W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Pulsed collector current: 570A
Collector-emitter voltage: 650V
Gate charge: 183nC
Turn-on time: 65ns
Turn-off time: 250ns
Collector current: 110A
Gate-emitter voltage: ±20V
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IXTH30N60P IXTH30N60P IXYS IXTH(Q,T,V)30N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
Reverse recovery time: 0.5µs
на замовлення 252 шт:
термін постачання 14-30 дні (днів)
1+751.18 грн
3+629.80 грн
5+586.63 грн
10+525.68 грн
30+505.37 грн
В кошику  од. на суму  грн.
IXTQ30N60L2 IXTQ30N60L2 IXYS IXT_30N60L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 335nC
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IXTQ30N60P IXTQ30N60P IXYS IXTH(Q,T,V)30N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
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IXTT30N60L2 IXTT30N60L2 IXYS IXT_30N60L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 600V; 30A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Technology: Linear L2™
Gate charge: 335nC
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IXTT30N60P IXTT30N60P IXYS IXTH(Q,T,V)30N60P_S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO268
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
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IXXH30N60C3D1 IXXH30N60C3D1 IXYS IXXH30N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 270W
Pulsed collector current: 110A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 37ns
Gate charge: 37nC
Turn-off time: 166ns
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IXXQ30N60B3M IXXQ30N60B3M IXYS IXXQ30N60B3M.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF
Type of transistor: IGBT
Case: TO3PF
Mounting: THT
Kind of package: tube
Collector current: 19A
Gate-emitter voltage: ±20V
Power dissipation: 90W
Pulsed collector current: 140A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 57ns
Gate charge: 39nC
Turn-off time: 292ns
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IXTA15N50L2 IXTA15N50L2 IXYS IXTA(H,P)15N50L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO263; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
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IXTH15N50L2 IXTH15N50L2 IXYS IXTA(H,P)15N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO247-3; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
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IXTP15N50L2 IXTP15N50L2 IXYS IXTA(H,P)15N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO220AB; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
на замовлення 313 шт:
термін постачання 14-30 дні (днів)
1+701.04 грн
5+520.60 грн
10+450.34 грн
50+435.11 грн
В кошику  од. на суму  грн.
IXFK48N60P IXFK48N60P IXYS IXF_48N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: TO264
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
1+1042.90 грн
В кошику  од. на суму  грн.
IXGH48N60B3C1 IXGH48N60B3C1 IXYS IXGH48N60B3C1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 48ns
Turn-off time: 347ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
на замовлення 28 шт:
термін постачання 14-30 дні (днів)
1+924.39 грн
3+817.73 грн
10+736.47 грн
В кошику  од. на суму  грн.
IXGH48N60B3D1 IXGH48N60B3D1 IXYS IXGH48N60B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 44ns
Turn-off time: 347ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
на замовлення 226 шт:
термін постачання 14-30 дні (днів)
1+504.13 грн
10+429.18 грн
В кошику  од. на суму  грн.
IXGH48N60C3D1 IXGH48N60C3D1 IXYS IXGH48N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 187ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 250A
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IXFK27N80Q IXFK27N80Q IXYS IXFK(X)27N80Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 170nC
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IXTA08N50D2 IXTA08N50D2 IXYS IXTA(P,Y)08N50D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
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IXTP08N50D2 IXTP08N50D2 IXYS IXTA(P,Y)08N50D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 4.6Ω
Mounting: THT
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
на замовлення 262 шт:
термін постачання 14-30 дні (днів)
2+239.76 грн
10+187.08 грн
25+150.68 грн
50+120.20 грн
100+112.59 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTY08N50D2 IXTY08N50D2 IXYS IXTA(P,Y)08N50D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
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IXKC15N60C5 IXYS media?resourcetype=datasheets&itemid=350D5F86-1037-44C7-AFE1-4B49E34623C5&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Super-Junction-IXKC15N60C5-Datasheet.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; ISOPLUS220™; 390ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
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IXTX90N25L2 IXTX90N25L2 IXYS IXTK(X)90N25L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; PLUS247™; 266ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Gate charge: 640nC
Reverse recovery time: 266ns
On-state resistance: 36mΩ
Kind of channel: enhancement
Power dissipation: 960W
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
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IXTX90P20P IXTX90P20P IXYS IXT_90P20P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns
Case: PLUS247™
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -90A
Reverse recovery time: 315ns
Gate charge: 205nC
On-state resistance: 44mΩ
Gate-source voltage: ±20V
Power dissipation: 890W
Kind of channel: enhancement
на замовлення 137 шт:
термін постачання 14-30 дні (днів)
1+1403.00 грн
5+1141.10 грн
10+1048.83 грн
30+1031.05 грн
В кошику  од. на суму  грн.
IXTP150N15X4 IXTP150N15X4 IXYS IXTH(P)150N15X4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 105nC
Reverse recovery time: 100ns
On-state resistance: 7.2mΩ
Power dissipation: 480W
Drain current: 150A
Drain-source voltage: 150V
на замовлення 205 шт:
термін постачання 14-30 дні (днів)
1+665.49 грн
3+558.70 грн
10+457.96 грн
25+391.09 грн
В кошику  од. на суму  грн.
IXTA3N150HV IXTA3N150HV IXYS IXTA3N150HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Power dissipation: 250W
Case: TO263
Mounting: SMD
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Features of semiconductor devices: standard power mosfet
на замовлення 53 шт:
термін постачання 14-30 дні (днів)
1+825.93 грн
3+700.07 грн
5+650.12 грн
10+571.40 грн
15+538.38 грн
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IXFP10N60P IXFP10N60P IXYS IXFA(P)10N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Reverse recovery time: 120ns
на замовлення 19 шт:
термін постачання 14-30 дні (днів)
3+185.39 грн
10+164.22 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTP10N60P IXTP10N60P IXYS IXTP10N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Gate charge: 32nC
Reverse recovery time: 0.5µs
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IXFN110N60P3 IXFN110N60P3 IXYS IXFN110N60P3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 90A
Power dissipation: 1.5kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 56mΩ
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Gate charge: 254nC
Reverse recovery time: 250ns
Pulsed drain current: 275A
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IXFA10N60P IXFA10N60P IXYS IXFA(P)10N60P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO263
On-state resistance: 0.74Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Reverse recovery time: 120ns
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IXFB110N60P3 IXFB110N60P3 IXYS IXFB110N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 110A; 1890W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 110A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 254nC
Reverse recovery time: 250ns
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IXFN44N80P IXFN44N80P IXYS IXFN44N80P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 39A
Pulsed drain current: 100A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Gate charge: 200nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
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IXTP60N10T IXTP60N10T IXYS IXTA(P)60N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 176W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 49nC
Reverse recovery time: 59ns
на замовлення 247 шт:
термін постачання 14-30 дні (днів)
3+204.20 грн
10+172.69 грн
25+146.45 грн
50+115.13 грн
100+96.50 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXFN360N10T IXFN360N10T IXYS IXFN360N10T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Gate charge: 525nC
Reverse recovery time: 130ns
On-state resistance: 2.6mΩ
Power dissipation: 830W
Gate-source voltage: ±30V
Pulsed drain current: 900A
Technology: GigaMOS™; HiPerFET™
Kind of channel: enhancement
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
товару немає в наявності
В кошику  од. на суму  грн.
IXTP160N10T IXTP160N10T IXYS IXT_160N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB
Type of transistor: N-MOSFET
Technology: Trench™
Kind of package: tube
Case: TO220AB
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Gate charge: 132nC
Reverse recovery time: 60ns
On-state resistance: 7mΩ
Power dissipation: 430W
Gate-source voltage: ±20V
Kind of channel: enhancement
Mounting: THT
на замовлення 232 шт:
термін постачання 14-30 дні (днів)
2+377.41 грн
10+270.88 грн
50+217.55 грн
100+211.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFN44N100Q3 IXFN44N100Q3 IXYS IXFN44N100Q3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±40V
Reverse recovery time: 300ns
Gate charge: 264nC
On-state resistance: 0.22Ω
Technology: HiPerFET™; Q3-Class
Drain current: 38A
Pulsed drain current: 110A
Drain-source voltage: 1kV
Power dissipation: 960W
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
1+4895.44 грн
В кошику  од. на суму  грн.
IXFH60N65X2 IXFH60N65X2 IXYS IXFH60N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; Idm: 120A; 780W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Case: TO247-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
On-state resistance: 52mΩ
Pulsed drain current: 120A
Power dissipation: 780W
Technology: HiPerFET™; X2-Class
Features of semiconductor devices: ultra junction x-class
Gate charge: 108nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFH60N65X2-4 IXFH60N65X2-4 IXYS IXFH60N65X2-4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Case: TO247-4
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
On-state resistance: 52mΩ
Power dissipation: 780W
Technology: HiPerFET™; X2-Class
Gate charge: 108nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFT60N65X2HV IXFT60N65X2HV IXYS IXFT60N65X2HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Case: TO268
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
On-state resistance: 52mΩ
Power dissipation: 780W
Technology: HiPerFET™; X2-Class
Gate charge: 108nC
на замовлення 26 шт:
термін постачання 14-30 дні (днів)
1+686.46 грн
В кошику  од. на суму  грн.
IXXH60N65B4 IXXH60N65B4 IXYS IXXH60N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-off time: 208ns
Gate-emitter voltage: ±20V
Power dissipation: 536W
Collector current: 60A
Pulsed collector current: 265A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Gate charge: 86nC
Turn-on time: 94ns
на замовлення 164 шт:
термін постачання 14-30 дні (днів)
1+484.07 грн
3+402.09 грн
5+374.16 грн
10+352.15 грн
В кошику  од. на суму  грн.
IXXH60N65B4H1 IXXH60N65B4H1 IXYS IXXH60N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-off time: 208ns
Gate-emitter voltage: ±20V
Power dissipation: 536W
Collector current: 60A
Pulsed collector current: 265A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Gate charge: 86nC
Turn-on time: 94ns
на замовлення 273 шт:
термін постачання 14-30 дні (днів)
1+862.40 грн
3+751.70 грн
30+662.82 грн
В кошику  од. на суму  грн.
IXXH60N65C4 IXXH60N65C4 IXYS IXXH60N65C4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-off time: 164ns
Gate-emitter voltage: ±20V
Power dissipation: 536W
Collector current: 60A
Pulsed collector current: 260A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Gate charge: 86nC
Turn-on time: 110ns
товару немає в наявності
В кошику  од. на суму  грн.
IXXK160N65B4 IXXK160N65B4 IXYS IXXK(x)160N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Case: TO264
Mounting: THT
Kind of package: tube
Turn-off time: 380ns
Gate-emitter voltage: ±20V
Power dissipation: 940W
Collector current: 160A
Pulsed collector current: 860A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Gate charge: 425nC
Turn-on time: 93ns
на замовлення 287 шт:
термін постачання 14-30 дні (днів)
1+1476.84 грн
3+1318.02 грн
10+1296.86 грн
В кошику  од. на суму  грн.
IXXK160N65C4 IXYS DS100516AIXXKX160N65C4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Case: TO264
Mounting: THT
Kind of package: tube
Turn-off time: 197ns
Gate-emitter voltage: ±20V
Power dissipation: 940W
Collector current: 160A
Pulsed collector current: 320A
Collector-emitter voltage: 650V
Technology: GenX4™; XPT™
Gate charge: 422nC
Turn-on time: 52ns
товару немає в наявності
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IXXX160N65B4 IXXX160N65B4 IXYS IXXK(x)160N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Case: PLUS247™
Mounting: THT
Kind of package: tube
Turn-off time: 380ns
Gate-emitter voltage: ±20V
Power dissipation: 940W
Collector current: 160A
Pulsed collector current: 860A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Gate charge: 425nC
Turn-on time: 93ns
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IXXX160N65C4 IXYS littelfuse-discrete-igbts-ixx-160n65c4-datasheet?assetguid=dcea7101-7c37-4ad5-a03a-2aa565384e38 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Case: PLUS247™
Mounting: THT
Kind of package: tube
Turn-off time: 197ns
Gate-emitter voltage: ±20V
Power dissipation: 940W
Collector current: 160A
Pulsed collector current: 320A
Collector-emitter voltage: 650V
Technology: GenX4™; XPT™
Gate charge: 422nC
Turn-on time: 52ns
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IXFH46N65X2 IXFH46N65X2 IXYS IXFH46N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Features of semiconductor devices: ultra junction x-class
на замовлення 215 шт:
термін постачання 14-30 дні (днів)
1+651.81 грн
10+459.66 грн
В кошику  од. на суму  грн.
CPC1150N CPC1150N IXYS CPC1150N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Kind of output: MOSFET
Case: SOP4
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Turn-on time: 1ms
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 50Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
на замовлення 480 шт:
термін постачання 14-30 дні (днів)
2+394.73 грн
10+295.43 грн
100+275.12 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP34N65X2 IXFP34N65X2 IXYS IXF_34N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO220AB; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO220AB
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
Power dissipation: 540W
на замовлення 161 шт:
термін постачання 14-30 дні (днів)
1+520.54 грн
5+383.47 грн
10+338.60 грн
25+330.14 грн
В кошику  од. на суму  грн.
IXGT72N60A3 IXGT72N60A3 IXYS IXG_72N60A3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO268
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: SMD
Gate charge: 230nC
Kind of package: tube
Turn-off time: 885ns
Turn-on time: 61ns
Technology: GenX3™
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
1+1004.61 грн
3+864.29 грн
В кошику  од. на суму  грн.
IXGH72N60A3 IXGH72N60A3 IXYS IXG_72N60A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Power dissipation: 540W
Case: TO247-3
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Collector current: 72A
Pulsed collector current: 400A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Technology: GenX3™; XPT™
Turn-on time: 61ns
Turn-off time: 885ns
на замовлення 214 шт:
термін постачання 14-30 дні (днів)
1+701.95 грн
10+479.97 грн
30+440.19 грн
В кошику  од. на суму  грн.
IXFA22N60P3 IXFA22N60P3 IXYS IXFA(H,P,Q)22N60P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO263
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 296 шт:
термін постачання 14-30 дні (днів)
2+337.30 грн
3+281.89 грн
10+248.87 грн
50+223.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH22N60P IXFH22N60P IXYS IXFH22N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 159 шт:
термін постачання 14-30 дні (днів)
1+523.27 грн
3+429.18 грн
10+386.01 грн
30+380.08 грн
В кошику  од. на суму  грн.
IXFH22N60P3 IXFH22N60P3 IXYS IXFA(H,P,Q)22N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 476 шт:
термін постачання 14-30 дні (днів)
1+457.64 грн
10+275.12 грн
В кошику  од. на суму  грн.
IXFP22N60P3 IXFP22N60P3 IXYS IXFA(H,P,Q)22N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 138 шт:
термін постачання 14-30 дні (днів)
2+355.53 грн
10+282.73 грн
50+246.33 грн
100+230.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXKH35N60C5 IXKH35N60C5 IXYS IXKH35N60C5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; 357W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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IXFN110N85X IXFN110N85X IXYS IXFN110N85X.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 110A
Power dissipation: 1.17kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 33mΩ
Kind of channel: enhancement
Semiconductor structure: single transistor
Gate charge: 425nC
Reverse recovery time: 205ns
Pulsed drain current: 220A
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
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В кошику  од. на суму  грн.
IXFB150N65X2 IXFB150N65X2 IXYS IXFB150N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 150A; 1560W; 260ns
Type of transistor: N-MOSFET
Power dissipation: 1.56kW
Case: PLUS264™
Mounting: THT
Gate charge: 355nC
Kind of package: tube
Polarisation: unipolar
Kind of channel: enhancement
Reverse recovery time: 260ns
On-state resistance: 17mΩ
Gate-source voltage: ±30V
Drain current: 150A
Technology: HiPerFET™; X2-Class
Drain-source voltage: 650V
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
1+2011.05 грн
В кошику  од. на суму  грн.
CLA100E1200HB CLA100E1200HB IXYS CLA100E1200HB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO247AD; THT; tube
Mounting: THT
Load current: 100A
Max. load current: 160A
Max. forward impulse current: 1.19kA
Max. off-state voltage: 1.2kV
Case: TO247AD
Type of thyristor: thyristor
Kind of package: tube
Gate current: 80mA
на замовлення 92 шт:
термін постачання 14-30 дні (днів)
1+692.84 грн
5+536.69 грн
10+479.13 грн
30+402.09 грн
В кошику  од. на суму  грн.
IXXN110N65B4H1 IXXN110N65B4H1.pdf
IXXN110N65B4H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX4™; XPT™
Power dissipation: 750W
Case: SOT227B
Pulsed collector current: 650A
Max. off-state voltage: 650V
Type of semiconductor module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Collector current: 110A
Gate-emitter voltage: ±20V
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IXXN110N65C4H1 IXXN110N65C4H1.pdf
IXXN110N65C4H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 750W
Case: SOT227B
Pulsed collector current: 470A
Max. off-state voltage: 650V
Type of semiconductor module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Collector current: 110A
Gate-emitter voltage: ±20V
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IXXR110N65B4H1 IXXR110N65B4H1.pdf
IXXR110N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 455W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Pulsed collector current: 490A
Collector-emitter voltage: 650V
Gate charge: 183nC
Turn-on time: 65ns
Turn-off time: 250ns
Collector current: 70A
Gate-emitter voltage: ±20V
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IXXX110N65B4H1 IXX_110N65B4H1.pdf
IXXX110N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 880W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Pulsed collector current: 570A
Collector-emitter voltage: 650V
Gate charge: 183nC
Turn-on time: 65ns
Turn-off time: 250ns
Collector current: 110A
Gate-emitter voltage: ±20V
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IXTH30N60P IXTH(Q,T,V)30N60P_S.pdf
IXTH30N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
Reverse recovery time: 0.5µs
на замовлення 252 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+751.18 грн
3+629.80 грн
5+586.63 грн
10+525.68 грн
30+505.37 грн
В кошику  од. на суму  грн.
IXTQ30N60L2 IXT_30N60L2.pdf
IXTQ30N60L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 335nC
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IXTQ30N60P IXTH(Q,T,V)30N60P_S.pdf
IXTQ30N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
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IXTT30N60L2 IXT_30N60L2.pdf
IXTT30N60L2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 600V; 30A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Technology: Linear L2™
Gate charge: 335nC
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IXTT30N60P IXTH(Q,T,V)30N60P_S.pdf
IXTT30N60P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO268
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
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IXXH30N60C3D1 IXXH30N60C3D1.pdf
IXXH30N60C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 270W
Pulsed collector current: 110A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 37ns
Gate charge: 37nC
Turn-off time: 166ns
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IXXQ30N60B3M IXXQ30N60B3M.pdf
IXXQ30N60B3M
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF
Type of transistor: IGBT
Case: TO3PF
Mounting: THT
Kind of package: tube
Collector current: 19A
Gate-emitter voltage: ±20V
Power dissipation: 90W
Pulsed collector current: 140A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 57ns
Gate charge: 39nC
Turn-off time: 292ns
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IXTA15N50L2 IXTA(H,P)15N50L2.pdf
IXTA15N50L2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO263; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
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IXTH15N50L2 IXTA(H,P)15N50L2.pdf
IXTH15N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO247-3; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
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IXTP15N50L2 IXTA(H,P)15N50L2.pdf
IXTP15N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO220AB; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 570ns
на замовлення 313 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+701.04 грн
5+520.60 грн
10+450.34 грн
50+435.11 грн
В кошику  од. на суму  грн.
IXFK48N60P IXF_48N60P.pdf
IXFK48N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: TO264
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1042.90 грн
В кошику  од. на суму  грн.
IXGH48N60B3C1 IXGH48N60B3C1-DTE.pdf
IXGH48N60B3C1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 48ns
Turn-off time: 347ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
на замовлення 28 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+924.39 грн
3+817.73 грн
10+736.47 грн
В кошику  од. на суму  грн.
IXGH48N60B3D1 IXGH48N60B3D1.pdf
IXGH48N60B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 44ns
Turn-off time: 347ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 280A
на замовлення 226 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+504.13 грн
10+429.18 грн
В кошику  од. на суму  грн.
IXGH48N60C3D1 IXGH48N60C3D1.pdf
IXGH48N60C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 187ns
Gate-emitter voltage: ±20V
Collector current: 48A
Pulsed collector current: 250A
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IXFK27N80Q IXFK(X)27N80Q.pdf
IXFK27N80Q
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 170nC
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IXTA08N50D2 IXTA(P,Y)08N50D2.pdf
IXTA08N50D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
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IXTP08N50D2 IXTA(P,Y)08N50D2.pdf
IXTP08N50D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 4.6Ω
Mounting: THT
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
на замовлення 262 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+239.76 грн
10+187.08 грн
25+150.68 грн
50+120.20 грн
100+112.59 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTY08N50D2 IXTA(P,Y)08N50D2.pdf
IXTY08N50D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
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IXKC15N60C5 media?resourcetype=datasheets&itemid=350D5F86-1037-44C7-AFE1-4B49E34623C5&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Super-Junction-IXKC15N60C5-Datasheet.PDF
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; ISOPLUS220™; 390ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
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IXTX90N25L2 IXTK(X)90N25L2.pdf
IXTX90N25L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; PLUS247™; 266ns
Case: PLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Gate charge: 640nC
Reverse recovery time: 266ns
On-state resistance: 36mΩ
Kind of channel: enhancement
Power dissipation: 960W
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
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IXTX90P20P IXT_90P20P.pdf
IXTX90P20P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns
Case: PLUS247™
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -90A
Reverse recovery time: 315ns
Gate charge: 205nC
On-state resistance: 44mΩ
Gate-source voltage: ±20V
Power dissipation: 890W
Kind of channel: enhancement
на замовлення 137 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1403.00 грн
5+1141.10 грн
10+1048.83 грн
30+1031.05 грн
В кошику  од. на суму  грн.
IXTP150N15X4 IXTH(P)150N15X4.pdf
IXTP150N15X4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 105nC
Reverse recovery time: 100ns
On-state resistance: 7.2mΩ
Power dissipation: 480W
Drain current: 150A
Drain-source voltage: 150V
на замовлення 205 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+665.49 грн
3+558.70 грн
10+457.96 грн
25+391.09 грн
В кошику  од. на суму  грн.
IXTA3N150HV IXTA3N150HV.pdf
IXTA3N150HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Power dissipation: 250W
Case: TO263
Mounting: SMD
Gate charge: 38.6nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Features of semiconductor devices: standard power mosfet
на замовлення 53 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+825.93 грн
3+700.07 грн
5+650.12 грн
10+571.40 грн
15+538.38 грн
В кошику  од. на суму  грн.
IXFP10N60P IXFA(P)10N60P.pdf
IXFP10N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Reverse recovery time: 120ns
на замовлення 19 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+185.39 грн
10+164.22 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTP10N60P IXTP10N60P.pdf
IXTP10N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Gate charge: 32nC
Reverse recovery time: 0.5µs
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IXFN110N60P3 IXFN110N60P3.pdf
IXFN110N60P3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 90A
Power dissipation: 1.5kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 56mΩ
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Gate charge: 254nC
Reverse recovery time: 250ns
Pulsed drain current: 275A
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IXFA10N60P IXFA(P)10N60P.pdf
IXFA10N60P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO263
On-state resistance: 0.74Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Reverse recovery time: 120ns
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IXFB110N60P3 IXFB110N60P3.pdf
IXFB110N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 110A; 1890W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 110A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 254nC
Reverse recovery time: 250ns
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IXFN44N80P description IXFN44N80P.pdf
IXFN44N80P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 39A
Pulsed drain current: 100A
Power dissipation: 694W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Gate charge: 200nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
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IXTP60N10T IXTA(P)60N10T.pdf
IXTP60N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 176W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 49nC
Reverse recovery time: 59ns
на замовлення 247 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+204.20 грн
10+172.69 грн
25+146.45 грн
50+115.13 грн
100+96.50 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXFN360N10T IXFN360N10T.pdf
IXFN360N10T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 360A
Gate charge: 525nC
Reverse recovery time: 130ns
On-state resistance: 2.6mΩ
Power dissipation: 830W
Gate-source voltage: ±30V
Pulsed drain current: 900A
Technology: GigaMOS™; HiPerFET™
Kind of channel: enhancement
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
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IXTP160N10T IXT_160N10T.pdf
IXTP160N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB
Type of transistor: N-MOSFET
Technology: Trench™
Kind of package: tube
Case: TO220AB
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Gate charge: 132nC
Reverse recovery time: 60ns
On-state resistance: 7mΩ
Power dissipation: 430W
Gate-source voltage: ±20V
Kind of channel: enhancement
Mounting: THT
на замовлення 232 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+377.41 грн
10+270.88 грн
50+217.55 грн
100+211.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFN44N100Q3 IXFN44N100Q3.pdf
IXFN44N100Q3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Kind of channel: enhancement
Polarisation: unipolar
Gate-source voltage: ±40V
Reverse recovery time: 300ns
Gate charge: 264nC
On-state resistance: 0.22Ω
Technology: HiPerFET™; Q3-Class
Drain current: 38A
Pulsed drain current: 110A
Drain-source voltage: 1kV
Power dissipation: 960W
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+4895.44 грн
В кошику  од. на суму  грн.
IXFH60N65X2 IXFH60N65X2.pdf
IXFH60N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; Idm: 120A; 780W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Case: TO247-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
On-state resistance: 52mΩ
Pulsed drain current: 120A
Power dissipation: 780W
Technology: HiPerFET™; X2-Class
Features of semiconductor devices: ultra junction x-class
Gate charge: 108nC
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IXFH60N65X2-4 IXFH60N65X2-4.pdf
IXFH60N65X2-4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Case: TO247-4
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
On-state resistance: 52mΩ
Power dissipation: 780W
Technology: HiPerFET™; X2-Class
Gate charge: 108nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFT60N65X2HV IXFT60N65X2HV.pdf
IXFT60N65X2HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Case: TO268
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
On-state resistance: 52mΩ
Power dissipation: 780W
Technology: HiPerFET™; X2-Class
Gate charge: 108nC
на замовлення 26 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+686.46 грн
В кошику  од. на суму  грн.
IXXH60N65B4 IXXH60N65B4.pdf
IXXH60N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-off time: 208ns
Gate-emitter voltage: ±20V
Power dissipation: 536W
Collector current: 60A
Pulsed collector current: 265A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Gate charge: 86nC
Turn-on time: 94ns
на замовлення 164 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+484.07 грн
3+402.09 грн
5+374.16 грн
10+352.15 грн
В кошику  од. на суму  грн.
IXXH60N65B4H1 IXXH60N65B4H1.pdf
IXXH60N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-off time: 208ns
Gate-emitter voltage: ±20V
Power dissipation: 536W
Collector current: 60A
Pulsed collector current: 265A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Gate charge: 86nC
Turn-on time: 94ns
на замовлення 273 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+862.40 грн
3+751.70 грн
30+662.82 грн
В кошику  од. на суму  грн.
IXXH60N65C4 IXXH60N65C4.pdf
IXXH60N65C4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Turn-off time: 164ns
Gate-emitter voltage: ±20V
Power dissipation: 536W
Collector current: 60A
Pulsed collector current: 260A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Gate charge: 86nC
Turn-on time: 110ns
товару немає в наявності
В кошику  од. на суму  грн.
IXXK160N65B4 IXXK(x)160N65B4.pdf
IXXK160N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Case: TO264
Mounting: THT
Kind of package: tube
Turn-off time: 380ns
Gate-emitter voltage: ±20V
Power dissipation: 940W
Collector current: 160A
Pulsed collector current: 860A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Gate charge: 425nC
Turn-on time: 93ns
на замовлення 287 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1476.84 грн
3+1318.02 грн
10+1296.86 грн
В кошику  од. на суму  грн.
IXXK160N65C4 DS100516AIXXKX160N65C4.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Case: TO264
Mounting: THT
Kind of package: tube
Turn-off time: 197ns
Gate-emitter voltage: ±20V
Power dissipation: 940W
Collector current: 160A
Pulsed collector current: 320A
Collector-emitter voltage: 650V
Technology: GenX4™; XPT™
Gate charge: 422nC
Turn-on time: 52ns
товару немає в наявності
В кошику  од. на суму  грн.
IXXX160N65B4 IXXK(x)160N65B4.pdf
IXXX160N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Case: PLUS247™
Mounting: THT
Kind of package: tube
Turn-off time: 380ns
Gate-emitter voltage: ±20V
Power dissipation: 940W
Collector current: 160A
Pulsed collector current: 860A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Gate charge: 425nC
Turn-on time: 93ns
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В кошику  од. на суму  грн.
IXXX160N65C4 littelfuse-discrete-igbts-ixx-160n65c4-datasheet?assetguid=dcea7101-7c37-4ad5-a03a-2aa565384e38
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Case: PLUS247™
Mounting: THT
Kind of package: tube
Turn-off time: 197ns
Gate-emitter voltage: ±20V
Power dissipation: 940W
Collector current: 160A
Pulsed collector current: 320A
Collector-emitter voltage: 650V
Technology: GenX4™; XPT™
Gate charge: 422nC
Turn-on time: 52ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFH46N65X2 IXFH46N65X2.pdf
IXFH46N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Features of semiconductor devices: ultra junction x-class
на замовлення 215 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+651.81 грн
10+459.66 грн
В кошику  од. на суму  грн.
CPC1150N CPC1150N.pdf
CPC1150N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Kind of output: MOSFET
Case: SOP4
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Turn-on time: 1ms
Turn-off time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 50Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
на замовлення 480 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+394.73 грн
10+295.43 грн
100+275.12 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP34N65X2 IXF_34N65X2.pdf
IXFP34N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO220AB; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO220AB
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
Power dissipation: 540W
на замовлення 161 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+520.54 грн
5+383.47 грн
10+338.60 грн
25+330.14 грн
В кошику  од. на суму  грн.
IXGT72N60A3 IXG_72N60A3.pdf
IXGT72N60A3
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO268
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: SMD
Gate charge: 230nC
Kind of package: tube
Turn-off time: 885ns
Turn-on time: 61ns
Technology: GenX3™
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1004.61 грн
3+864.29 грн
В кошику  од. на суму  грн.
IXGH72N60A3 IXG_72N60A3.pdf
IXGH72N60A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Power dissipation: 540W
Case: TO247-3
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Collector current: 72A
Pulsed collector current: 400A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Technology: GenX3™; XPT™
Turn-on time: 61ns
Turn-off time: 885ns
на замовлення 214 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+701.95 грн
10+479.97 грн
30+440.19 грн
В кошику  од. на суму  грн.
IXFA22N60P3 IXFA(H,P,Q)22N60P3.pdf
IXFA22N60P3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO263
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 296 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+337.30 грн
3+281.89 грн
10+248.87 грн
50+223.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH22N60P IXFH22N60P.pdf
IXFH22N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 159 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+523.27 грн
3+429.18 грн
10+386.01 грн
30+380.08 грн
В кошику  од. на суму  грн.
IXFH22N60P3 IXFA(H,P,Q)22N60P3.pdf
IXFH22N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 476 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+457.64 грн
10+275.12 грн
В кошику  од. на суму  грн.
IXFP22N60P3 IXFA(H,P,Q)22N60P3.pdf
IXFP22N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 138 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+355.53 грн
10+282.73 грн
50+246.33 грн
100+230.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXKH35N60C5 IXKH35N60C5.pdf
IXKH35N60C5
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; 357W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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В кошику  од. на суму  грн.
IXFN110N85X IXFN110N85X.pdf
IXFN110N85X
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 110A
Power dissipation: 1.17kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 33mΩ
Kind of channel: enhancement
Semiconductor structure: single transistor
Gate charge: 425nC
Reverse recovery time: 205ns
Pulsed drain current: 220A
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
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В кошику  од. на суму  грн.
IXFB150N65X2 IXFB150N65X2.pdf
IXFB150N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 150A; 1560W; 260ns
Type of transistor: N-MOSFET
Power dissipation: 1.56kW
Case: PLUS264™
Mounting: THT
Gate charge: 355nC
Kind of package: tube
Polarisation: unipolar
Kind of channel: enhancement
Reverse recovery time: 260ns
On-state resistance: 17mΩ
Gate-source voltage: ±30V
Drain current: 150A
Technology: HiPerFET™; X2-Class
Drain-source voltage: 650V
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2011.05 грн
В кошику  од. на суму  грн.
CLA100E1200HB CLA100E1200HB.pdf
CLA100E1200HB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 160A; 100A; Igt: 80mA; TO247AD; THT; tube
Mounting: THT
Load current: 100A
Max. load current: 160A
Max. forward impulse current: 1.19kA
Max. off-state voltage: 1.2kV
Case: TO247AD
Type of thyristor: thyristor
Kind of package: tube
Gate current: 80mA
на замовлення 92 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+692.84 грн
5+536.69 грн
10+479.13 грн
30+402.09 грн
В кошику  од. на суму  грн.
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