| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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GBO25-16NO1 | IXYS |
 Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A Leads: flat pin Max. off-state voltage: 1.6kV Load current: 25A Max. forward impulse current: 370A Kind of package: tube Electrical mounting: THT Version: flat Type of bridge rectifier: single-phase Case: GBFP |
на замовлення 31 шт: термін постачання 21-30 дні (днів) |
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MDD312-12N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.2kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 1.2kV Max. forward impulse current: 9.18kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode Max. load current: 520A Max. forward voltage: 1.03V Load current: 310A Semiconductor structure: double series |
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| MDD312-14N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 1.4kV Max. forward impulse current: 10.8kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode Max. forward voltage: 1.03V Load current: 310A Semiconductor structure: double series |
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MDD312-16N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 1.6kV Max. forward impulse current: 9.18kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode Max. load current: 520A Max. forward voltage: 1.03V Load current: 310A Semiconductor structure: double series |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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| MDD312-18N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.8kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 1.8kV Max. forward impulse current: 10.8kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode Max. forward voltage: 1.03V Load current: 310A Semiconductor structure: double series |
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MDD312-22N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 2.2kV Max. forward impulse current: 9.18kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode Max. load current: 520A Max. forward voltage: 1.03V Load current: 310A Semiconductor structure: double series |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IXFK320N17T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 170V; 320A; 1670W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 170V Drain current: 320A Power dissipation: 1670W Case: TO264 On-state resistance: 5.2mΩ Mounting: THT Gate charge: 640nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
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IXFR20N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 160W; ISOPLUS247™ Case: ISOPLUS247™ Mounting: THT Kind of package: tube Kind of channel: enhanced Drain-source voltage: 800V Drain current: 10A On-state resistance: 570mΩ Type of transistor: N-MOSFET Power dissipation: 160W Polarisation: unipolar Gate charge: 86nC |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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IXFT20N80P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO268 Case: TO268 Mounting: SMD Kind of package: tube Kind of channel: enhanced Drain-source voltage: 800V Drain current: 20A On-state resistance: 0.52Ω Type of transistor: N-MOSFET Power dissipation: 500W Polarisation: unipolar Gate charge: 86nC |
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IXBOD1-21R | IXYS |
Category: Thyristors - others Description: Thyristor: BOD x3; 0.9A; BOD; THT; bulk; 2.1kV Mounting: THT Kind of package: bulk Breakover voltage: 2.1kV Type of thyristor: BOD x3 Case: BOD Max. load current: 0.9A |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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CPC2330N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA Case: SO8 Mounting: SMT Operating temperature: -40...85°C Body dimensions: 9.35x3.81x2.18mm Contacts configuration: SPST-NO + SPST-NC Insulation voltage: 1.5kV Turn-on time: 3ms Switched voltage: max. 350V AC; max. 350V DC Max. operating current: 120mA Turn-off time: 3ms Control current max.: 50mA On-state resistance: 30Ω Type of relay: solid state Manufacturer series: OptoMOS Relay variant: 1-phase; current source |
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| CPC2330NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA Case: SO8 Mounting: SMT Operating temperature: -40...85°C Body dimensions: 9.35x3.81x2.18mm Contacts configuration: SPST-NO + SPST-NC Insulation voltage: 1.5kV Turn-on time: 3ms Switched voltage: max. 350V AC; max. 350V DC Max. operating current: 120mA Turn-off time: 3ms Control current max.: 50mA On-state resistance: 30Ω Type of relay: solid state Manufacturer series: OptoMOS Relay variant: 1-phase; current source |
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IXBF42N300 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 3kV; 24A; 240W; ISOPLUS i4-pac™ x024c Mounting: THT Case: ISOPLUS i4-pac™ x024c Collector-emitter voltage: 3kV Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 200nC Technology: BiMOSFET™ Collector current: 24A Pulsed collector current: 380A Turn-on time: 652ns Turn-off time: 950ns Type of transistor: IGBT Gate-emitter voltage: ±20V Power dissipation: 240W |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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| VGF0136AB | IXYS |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: braking rectifier assemblies; Urmax: 2.8kV Type of bridge rectifier: braking rectifier assemblies Max. off-state voltage: 2.8kV Load current: 1.2A Max. forward impulse current: 80A Electrical mounting: screw Mechanical mounting: screw Version: module Case: VG-B |
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| CMA50E1600HB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; TO247AD; THT; tube Max. off-state voltage: 1.6kV Max. forward impulse current: 595A Case: TO247AD Mounting: THT Kind of package: tube Max. load current: 79A Load current: 50A Gate current: 80mA Type of thyristor: thyristor |
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| CMA50E1600QB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; TO3P; THT; tube Mounting: THT Case: TO3P Kind of package: tube Gate current: 80mA Load current: 50A Max. load current: 79A Max. off-state voltage: 1.6kV Type of thyristor: thyristor Max. forward impulse current: 595A |
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IXTR120P20T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -90A; 595W; 300ns Case: ISOPLUS247™ Mounting: THT Kind of package: tube Gate charge: 740nC Technology: TrenchP™ Kind of channel: enhanced Gate-source voltage: ±15V Reverse recovery time: 300ns Drain-source voltage: -200V Drain current: -90A On-state resistance: 32mΩ Type of transistor: P-MOSFET Power dissipation: 595W Polarisation: unipolar |
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CMA20E1600PB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.6kV; Ifmax: 31A; 20A; Igt: 50mA; TO220AB; THT; tube Mounting: THT Kind of package: tube Max. forward impulse current: 195A Gate current: 50mA Max. off-state voltage: 1.6kV Load current: 20A Max. load current: 31A Case: TO220AB Type of thyristor: thyristor |
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| CMA20E1600PZ-TUB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.6kV; Ifmax: 31A; 20A; Igt: 28/50mA; TO263ABHV; SMD; tube Mounting: SMD Kind of package: tube Max. forward impulse current: 155A Gate current: 28/50mA Max. off-state voltage: 1.6kV Load current: 20A Max. load current: 31A Case: TO263ABHV Type of thyristor: thyristor |
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IXTH1N170DHV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO247HV; 30ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 1A Power dissipation: 290W Case: TO247HV On-state resistance: 16Ω Mounting: THT Kind of package: tube Kind of channel: depleted Reverse recovery time: 30ns |
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IXTH2N170D2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.7kV; 2A; 568W; TO247-3; 80ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 2A Power dissipation: 568W Case: TO247-3 On-state resistance: 6.5Ω Mounting: THT Kind of package: tube Kind of channel: depleted Reverse recovery time: 80ns |
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| MMO140-12IO7 | IXYS |
Category: Thyristor modules Description: Module: thyristor; opposing; 1.2kV; 58A; ECO-PAC 1; Ufmax: 1.75V Type of module: thyristor Case: ECO-PAC 1 Gate current: 100/200mA Max. forward impulse current: 1.15kA Kind of package: bulk Electrical mounting: THT Mechanical mounting: screw Leads: wire Ø 0.75mm Max. off-state voltage: 1.2kV Max. forward voltage: 1.75V Load current: 58A Semiconductor structure: opposing |
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| MMO140-16IO7 | IXYS |
Category: Thyristor modules Description: Module: thyristor; opposing; 1.6kV; 58A; ECO-PAC 1; Ufmax: 1.75V Type of module: thyristor Case: ECO-PAC 1 Gate current: 100/200mA Max. forward impulse current: 1.15kA Kind of package: bulk Electrical mounting: THT Mechanical mounting: screw Leads: wire Ø 0.75mm Max. off-state voltage: 1.6kV Max. forward voltage: 1.75V Load current: 58A Semiconductor structure: opposing |
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| MEK600-04DA | IXYS |
Category: Diode modules Description: Module: diode; common cathode; 400V; If: 600A; Y4-M6; Ufmax: 1.2V Electrical mounting: screw Load current: 600A Type of module: diode Semiconductor structure: common cathode Case: Y4-M6 Max. forward impulse current: 3kA Max. forward voltage: 1.2V Mechanical mounting: screw Max. off-state voltage: 0.4kV |
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IXFK102N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 102A Power dissipation: 700W Case: TO264 On-state resistance: 33mΩ Mounting: THT Gate charge: 224nC Kind of package: tube Kind of channel: enhanced |
на замовлення 16 шт: термін постачання 21-30 дні (днів) |
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IXTA18P10T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO263 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -18A Power dissipation: 83W Case: TO263 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 39nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 62ns |
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IXTP18P10T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO220AB Mounting: THT Type of transistor: P-MOSFET On-state resistance: 0.12Ω Drain current: -18A Drain-source voltage: -100V Reverse recovery time: 62ns Case: TO220AB Gate charge: 39nC Technology: TrenchP™ Kind of channel: enhanced Polarisation: unipolar Gate-source voltage: ±15V Power dissipation: 83W Kind of package: tube |
на замовлення 269 шт: термін постачання 21-30 дні (днів) |
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DSA20C100PN | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; 35W; TO220FP; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Power dissipation: 35W Semiconductor structure: common cathode; double Case: TO220FP Kind of package: tube Max. forward impulse current: 240A Max. forward voltage: 0.71V |
на замовлення 57 шт: термін постачання 21-30 дні (днів) |
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IXFX220N17T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 170V Drain current: 220A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 6.3mΩ Mounting: THT Gate charge: 500nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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IXFX320N17T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 170V; 320A; 1670W; PLUS247™ Case: PLUS247™ Mounting: THT Features of semiconductor devices: thrench gate power mosfet Kind of package: tube Power dissipation: 1670W Gate charge: 640nC Polarisation: unipolar Drain current: 320A Kind of channel: enhanced Drain-source voltage: 170V Type of transistor: N-MOSFET On-state resistance: 5.2mΩ |
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IXFK200N10P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 200A Power dissipation: 830W Case: TO264 On-state resistance: 7.5mΩ Mounting: THT Gate charge: 235nC Kind of package: tube Kind of channel: enhanced |
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IXFB60N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 60A; 1250W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 60A Power dissipation: 1.25kW Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 250nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
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IXFK170N20T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 170A Power dissipation: 1.15kW Case: TO264 On-state resistance: 11mΩ Mounting: THT Gate charge: 265nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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IXFK170N25X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO264; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 170A Power dissipation: 890W Case: TO264 On-state resistance: 7.4mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 140ns |
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| CLE90UH1200TLB-TRR | IXYS |
Category: Three phase controlled bridge rectif. Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 90A; SMT; SMPD Electrical mounting: SMT Max. forward impulse current: 350A Max. forward voltage: 1.95V Features of semiconductor devices: with thermistor (NTC) Max. off-state voltage: 1.2kV Load current: 90A Case: SMPD Type of bridge rectifier: half-controlled |
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| CLE90UH1200TLB-TUB | IXYS |
Category: Three phase controlled bridge rectif. Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 90A; SMT; SMPD Electrical mounting: SMT Max. forward impulse current: 350A Max. forward voltage: 1.95V Features of semiconductor devices: with thermistor (NTC) Max. off-state voltage: 1.2kV Load current: 90A Case: SMPD Type of bridge rectifier: half-controlled |
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CPC1302G | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8 Case: DIP8 Mounting: THT Number of channels: 2 CTR@If: 1000-8000%@1mA Kind of output: Darlington Insulation voltage: 3.75kV Type of optocoupler: optocoupler |
на замовлення 398 шт: термін постачання 21-30 дні (днів) |
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CPC1302GS | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; 250mV/μs Mounting: SMD Number of channels: 2 CTR@If: 1000-8000%@1mA Slew rate: 0.25V/μs Kind of output: Darlington Insulation voltage: 3.75kV Max. off-state voltage: 5V Type of optocoupler: optocoupler Turn-on time: 1µs Turn-off time: 80µs Trigger current: 50mA |
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CPC1302GSTR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; 250mV/μs Mounting: SMD Number of channels: 2 CTR@If: 1000-8000%@1mA Slew rate: 0.25V/μs Kind of output: Darlington Insulation voltage: 3.75kV Max. off-state voltage: 5V Type of optocoupler: optocoupler Turn-on time: 1µs Turn-off time: 80µs Trigger current: 50mA |
на замовлення 764 шт: термін постачання 21-30 дні (днів) |
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| VBE100-12NO7 | IXYS |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 100A; Ifsm: 415A Type of bridge rectifier: single-phase Max. off-state voltage: 1.2kV Load current: 100A Max. forward impulse current: 415A Electrical mounting: THT Version: module Leads: wire Ø 1.5mm Case: ECO-PAC 2 Mechanical mounting: screw Technology: FRED |
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| VUO22-12NO1 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 22A; Ifsm: 100A Type of bridge rectifier: three-phase Max. off-state voltage: 1.2kV Load current: 22A Max. forward impulse current: 100A Electrical mounting: FASTON connectors Version: module Max. forward voltage: 1.12V Leads: connectors 2,0x0,5mm Case: V1-A-Pack Mechanical mounting: screw |
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| DPG30C200PC-TRL | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 15Ax2; 35ns; TO263AB; Ufmax: 1.51V Type of diode: rectifying Technology: HiPerFRED™ Mounting: SMD Max. off-state voltage: 200V Load current: 15A x2 Reverse recovery time: 35ns Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Max. forward voltage: 1.51V Case: TO263AB Kind of package: reel; tape Max. forward impulse current: 240A Power dissipation: 90W |
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DSA30C45PC | IXYS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 15Ax2; D2PAK; reel,tape; 85W Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.63V Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 340A Power dissipation: 85W |
на замовлення 698 шт: термін постачання 21-30 дні (днів) |
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IXTA26P10T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -26A Power dissipation: 150W Case: TO263 Gate-source voltage: ±15V On-state resistance: 90mΩ Mounting: SMD Gate charge: 52nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 70ns |
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IXTP26P10T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -26A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±15V On-state resistance: 90mΩ Mounting: THT Gate charge: 52nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 70ns |
на замовлення 35 шт: термін постачання 21-30 дні (днів) |
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CPC1540GS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Case: DIP6 On-state resistance: 25Ω Mounting: SMT Manufacturer series: OptoMOS Turn-on time: 2ms Turn-off time: 2ms Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 3.75kV Switched voltage: max. 350V AC; max. 350V DC Max. operating current: 120mA Control current max.: 50mA Type of relay: solid state Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 8.38x6.35x3.3mm |
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IXFH160N15T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 160A Power dissipation: 880W Case: TO247-3 On-state resistance: 9mΩ Mounting: THT Gate charge: 253nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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IXFH76N15T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 76A; 350W; TO247-3; 69ns Reverse recovery time: 69ns Drain-source voltage: 150V Drain current: 76A On-state resistance: 22mΩ Type of transistor: N-MOSFET Power dissipation: 350W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 97nC Kind of channel: enhanced Mounting: THT Case: TO247-3 |
на замовлення 228 шт: термін постачання 21-30 дні (днів) |
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IXFH96N15P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 96A; 480W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 96A Power dissipation: 480W Case: TO247-3 On-state resistance: 24mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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IXFK180N15P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 180A; 830W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 180A Power dissipation: 830W Case: TO264 On-state resistance: 11mΩ Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhanced |
на замовлення 16 шт: термін постачання 21-30 дні (днів) |
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IXFP102N15T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 102A Power dissipation: 455W Case: TO220AB On-state resistance: 18mΩ Mounting: THT Gate charge: 87nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
товар відсутній |
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IXFP130N15X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO220AB; 80ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 130A Power dissipation: 390W Case: TO220AB On-state resistance: 9mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 80ns |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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IXFX180N15P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 180A; 830W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 180A Power dissipation: 830W Case: PLUS247™ On-state resistance: 11mΩ Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhanced |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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IXFX240N15T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 1250W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 240A Power dissipation: 1.25kW Case: PLUS247™ On-state resistance: 5.2mΩ Mounting: THT Gate charge: 460nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
товар відсутній |
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IXTH240N15X4 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 240A Power dissipation: 940W Case: TO247-3 On-state resistance: 4.4mΩ Mounting: THT Gate charge: 195nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 130ns |
на замовлення 210 шт: термін постачання 21-30 дні (днів) |
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IXTH88N15 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 88A; 400W; TO247-3; 150ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 88A Power dissipation: 400W Case: TO247-3 On-state resistance: 22mΩ Mounting: THT Gate charge: 170nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 150ns |
товар відсутній |
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IXTP102N15T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 102A Power dissipation: 455W Case: TO220AB On-state resistance: 18mΩ Mounting: THT Gate charge: 87nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 97ns |
товар відсутній |
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IXTP130N15X4 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 400W; TO220AB; 93ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 130A Power dissipation: 400W Case: TO220AB On-state resistance: 8.5mΩ Mounting: THT Gate charge: 87nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 93ns |
на замовлення 29 шт: термін постачання 21-30 дні (днів) |
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IXFN300N10P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 295A; SOT227B; screw; Idm: 900A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 295A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 5.5mΩ Pulsed drain current: 900A Power dissipation: 1.07kW Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate charge: 279nC Reverse recovery time: 200ns Gate-source voltage: ±30V Mechanical mounting: screw |
товар відсутній |
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IXFN300N20X3 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 300A; SOT227B; screw; Idm: 700A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 200V Drain current: 300A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 3.5mΩ Pulsed drain current: 700A Power dissipation: 695W Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate charge: 375nC Reverse recovery time: 172ns Gate-source voltage: ±30V Mechanical mounting: screw |
товар відсутній |
| GBO25-16NO1 |
|
Виробник: IXYS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 1.6kV
Load current: 25A
Max. forward impulse current: 370A
Kind of package: tube
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
Case: GBFP
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 25A; Ifsm: 370A
Leads: flat pin
Max. off-state voltage: 1.6kV
Load current: 25A
Max. forward impulse current: 370A
Kind of package: tube
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
Case: GBFP
на замовлення 31 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 829.96 грн |
| 2+ | 554.95 грн |
| 3+ | 554.25 грн |
| 4+ | 524.42 грн |
| MDD312-12N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.2kV
Max. forward impulse current: 9.18kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. load current: 520A
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.2kV
Max. forward impulse current: 9.18kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. load current: 520A
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
товар відсутній
| MDD312-14N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.4kV
Max. forward impulse current: 10.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.4kV
Max. forward impulse current: 10.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
товар відсутній
| MDD312-16N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.6kV
Max. forward impulse current: 9.18kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. load current: 520A
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.6kV
Max. forward impulse current: 9.18kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. load current: 520A
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 10238.22 грн |
| MDD312-18N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.8kV
Max. forward impulse current: 10.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.8kV
Max. forward impulse current: 10.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
товар відсутній
| MDD312-22N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2.2kV
Max. forward impulse current: 9.18kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. load current: 520A
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2.2kV
Max. forward impulse current: 9.18kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Max. load current: 520A
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 13363.11 грн |
| IXFK320N17T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 320A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 320A
Power dissipation: 1670W
Case: TO264
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 640nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 320A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 320A
Power dissipation: 1670W
Case: TO264
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 640nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
товар відсутній
| IXFR20N80P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 160W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Drain-source voltage: 800V
Drain current: 10A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Gate charge: 86nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 160W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Drain-source voltage: 800V
Drain current: 10A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Gate charge: 86nC
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 784.4 грн |
| 2+ | 495.29 грн |
| 5+ | 468.24 грн |
| IXFT20N80P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Drain-source voltage: 800V
Drain current: 20A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Gate charge: 86nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO268
Case: TO268
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Drain-source voltage: 800V
Drain current: 20A
On-state resistance: 0.52Ω
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Gate charge: 86nC
товар відсутній
| IXBOD1-21R |
|
Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x3; 0.9A; BOD; THT; bulk; 2.1kV
Mounting: THT
Kind of package: bulk
Breakover voltage: 2.1kV
Type of thyristor: BOD x3
Case: BOD
Max. load current: 0.9A
Category: Thyristors - others
Description: Thyristor: BOD x3; 0.9A; BOD; THT; bulk; 2.1kV
Mounting: THT
Kind of package: bulk
Breakover voltage: 2.1kV
Type of thyristor: BOD x3
Case: BOD
Max. load current: 0.9A
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3023.28 грн |
| CPC2330N |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Case: SO8
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Contacts configuration: SPST-NO + SPST-NC
Insulation voltage: 1.5kV
Turn-on time: 3ms
Switched voltage: max. 350V AC; max. 350V DC
Max. operating current: 120mA
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 30Ω
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Case: SO8
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Contacts configuration: SPST-NO + SPST-NC
Insulation voltage: 1.5kV
Turn-on time: 3ms
Switched voltage: max. 350V AC; max. 350V DC
Max. operating current: 120mA
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 30Ω
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
товар відсутній
| CPC2330NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Case: SO8
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Contacts configuration: SPST-NO + SPST-NC
Insulation voltage: 1.5kV
Turn-on time: 3ms
Switched voltage: max. 350V AC; max. 350V DC
Max. operating current: 120mA
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 30Ω
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Case: SO8
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Contacts configuration: SPST-NO + SPST-NC
Insulation voltage: 1.5kV
Turn-on time: 3ms
Switched voltage: max. 350V AC; max. 350V DC
Max. operating current: 120mA
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 30Ω
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
товар відсутній
| IXBF42N300 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 24A; 240W; ISOPLUS i4-pac™ x024c
Mounting: THT
Case: ISOPLUS i4-pac™ x024c
Collector-emitter voltage: 3kV
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 200nC
Technology: BiMOSFET™
Collector current: 24A
Pulsed collector current: 380A
Turn-on time: 652ns
Turn-off time: 950ns
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Power dissipation: 240W
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 24A; 240W; ISOPLUS i4-pac™ x024c
Mounting: THT
Case: ISOPLUS i4-pac™ x024c
Collector-emitter voltage: 3kV
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 200nC
Technology: BiMOSFET™
Collector current: 24A
Pulsed collector current: 380A
Turn-on time: 652ns
Turn-off time: 950ns
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Power dissipation: 240W
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3862.96 грн |
| VGF0136AB |
|
Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: braking rectifier assemblies; Urmax: 2.8kV
Type of bridge rectifier: braking rectifier assemblies
Max. off-state voltage: 2.8kV
Load current: 1.2A
Max. forward impulse current: 80A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Case: VG-B
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: braking rectifier assemblies; Urmax: 2.8kV
Type of bridge rectifier: braking rectifier assemblies
Max. off-state voltage: 2.8kV
Load current: 1.2A
Max. forward impulse current: 80A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Case: VG-B
товар відсутній
| CMA50E1600HB |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; TO247AD; THT; tube
Max. off-state voltage: 1.6kV
Max. forward impulse current: 595A
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. load current: 79A
Load current: 50A
Gate current: 80mA
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; TO247AD; THT; tube
Max. off-state voltage: 1.6kV
Max. forward impulse current: 595A
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. load current: 79A
Load current: 50A
Gate current: 80mA
Type of thyristor: thyristor
товар відсутній
| CMA50E1600QB |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; TO3P; THT; tube
Mounting: THT
Case: TO3P
Kind of package: tube
Gate current: 80mA
Load current: 50A
Max. load current: 79A
Max. off-state voltage: 1.6kV
Type of thyristor: thyristor
Max. forward impulse current: 595A
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80mA; TO3P; THT; tube
Mounting: THT
Case: TO3P
Kind of package: tube
Gate current: 80mA
Load current: 50A
Max. load current: 79A
Max. off-state voltage: 1.6kV
Type of thyristor: thyristor
Max. forward impulse current: 595A
товар відсутній
| IXTR120P20T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -90A; 595W; 300ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 740nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±15V
Reverse recovery time: 300ns
Drain-source voltage: -200V
Drain current: -90A
On-state resistance: 32mΩ
Type of transistor: P-MOSFET
Power dissipation: 595W
Polarisation: unipolar
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -90A; 595W; 300ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 740nC
Technology: TrenchP™
Kind of channel: enhanced
Gate-source voltage: ±15V
Reverse recovery time: 300ns
Drain-source voltage: -200V
Drain current: -90A
On-state resistance: 32mΩ
Type of transistor: P-MOSFET
Power dissipation: 595W
Polarisation: unipolar
товар відсутній
| CMA20E1600PB |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 31A; 20A; Igt: 50mA; TO220AB; THT; tube
Mounting: THT
Kind of package: tube
Max. forward impulse current: 195A
Gate current: 50mA
Max. off-state voltage: 1.6kV
Load current: 20A
Max. load current: 31A
Case: TO220AB
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 31A; 20A; Igt: 50mA; TO220AB; THT; tube
Mounting: THT
Kind of package: tube
Max. forward impulse current: 195A
Gate current: 50mA
Max. off-state voltage: 1.6kV
Load current: 20A
Max. load current: 31A
Case: TO220AB
Type of thyristor: thyristor
товар відсутній
| CMA20E1600PZ-TUB |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 31A; 20A; Igt: 28/50mA; TO263ABHV; SMD; tube
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 155A
Gate current: 28/50mA
Max. off-state voltage: 1.6kV
Load current: 20A
Max. load current: 31A
Case: TO263ABHV
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 31A; 20A; Igt: 28/50mA; TO263ABHV; SMD; tube
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 155A
Gate current: 28/50mA
Max. off-state voltage: 1.6kV
Load current: 20A
Max. load current: 31A
Case: TO263ABHV
Type of thyristor: thyristor
товар відсутній
| IXTH1N170DHV |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO247HV; 30ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 1A
Power dissipation: 290W
Case: TO247HV
On-state resistance: 16Ω
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 30ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO247HV; 30ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 1A
Power dissipation: 290W
Case: TO247HV
On-state resistance: 16Ω
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 30ns
товар відсутній
| IXTH2N170D2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 2A; 568W; TO247-3; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 2A
Power dissipation: 568W
Case: TO247-3
On-state resistance: 6.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 80ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 2A; 568W; TO247-3; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 2A
Power dissipation: 568W
Case: TO247-3
On-state resistance: 6.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 80ns
товар відсутній
| MMO140-12IO7 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 58A; ECO-PAC 1; Ufmax: 1.75V
Type of module: thyristor
Case: ECO-PAC 1
Gate current: 100/200mA
Max. forward impulse current: 1.15kA
Kind of package: bulk
Electrical mounting: THT
Mechanical mounting: screw
Leads: wire Ø 0.75mm
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.75V
Load current: 58A
Semiconductor structure: opposing
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.2kV; 58A; ECO-PAC 1; Ufmax: 1.75V
Type of module: thyristor
Case: ECO-PAC 1
Gate current: 100/200mA
Max. forward impulse current: 1.15kA
Kind of package: bulk
Electrical mounting: THT
Mechanical mounting: screw
Leads: wire Ø 0.75mm
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.75V
Load current: 58A
Semiconductor structure: opposing
товар відсутній
| MMO140-16IO7 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 58A; ECO-PAC 1; Ufmax: 1.75V
Type of module: thyristor
Case: ECO-PAC 1
Gate current: 100/200mA
Max. forward impulse current: 1.15kA
Kind of package: bulk
Electrical mounting: THT
Mechanical mounting: screw
Leads: wire Ø 0.75mm
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.75V
Load current: 58A
Semiconductor structure: opposing
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 58A; ECO-PAC 1; Ufmax: 1.75V
Type of module: thyristor
Case: ECO-PAC 1
Gate current: 100/200mA
Max. forward impulse current: 1.15kA
Kind of package: bulk
Electrical mounting: THT
Mechanical mounting: screw
Leads: wire Ø 0.75mm
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.75V
Load current: 58A
Semiconductor structure: opposing
товар відсутній
| MEK600-04DA |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 400V; If: 600A; Y4-M6; Ufmax: 1.2V
Electrical mounting: screw
Load current: 600A
Type of module: diode
Semiconductor structure: common cathode
Case: Y4-M6
Max. forward impulse current: 3kA
Max. forward voltage: 1.2V
Mechanical mounting: screw
Max. off-state voltage: 0.4kV
Category: Diode modules
Description: Module: diode; common cathode; 400V; If: 600A; Y4-M6; Ufmax: 1.2V
Electrical mounting: screw
Load current: 600A
Type of module: diode
Semiconductor structure: common cathode
Case: Y4-M6
Max. forward impulse current: 3kA
Max. forward voltage: 1.2V
Mechanical mounting: screw
Max. off-state voltage: 0.4kV
товар відсутній
| IXFK102N30P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 102A
Power dissipation: 700W
Case: TO264
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 224nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 102A
Power dissipation: 700W
Case: TO264
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 224nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 16 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1071.26 грн |
| 2+ | 711.02 грн |
| 4+ | 672.18 грн |
| IXTA18P10T |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 62ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 62ns
товар відсутній
| IXTP18P10T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO220AB
Mounting: THT
Type of transistor: P-MOSFET
On-state resistance: 0.12Ω
Drain current: -18A
Drain-source voltage: -100V
Reverse recovery time: 62ns
Case: TO220AB
Gate charge: 39nC
Technology: TrenchP™
Kind of channel: enhanced
Polarisation: unipolar
Gate-source voltage: ±15V
Power dissipation: 83W
Kind of package: tube
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO220AB
Mounting: THT
Type of transistor: P-MOSFET
On-state resistance: 0.12Ω
Drain current: -18A
Drain-source voltage: -100V
Reverse recovery time: 62ns
Case: TO220AB
Gate charge: 39nC
Technology: TrenchP™
Kind of channel: enhanced
Polarisation: unipolar
Gate-source voltage: ±15V
Power dissipation: 83W
Kind of package: tube
на замовлення 269 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 95.03 грн |
| 10+ | 86.02 грн |
| 26+ | 81.16 грн |
| 50+ | 80.47 грн |
| DSA20C100PN |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; 35W; TO220FP; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Power dissipation: 35W
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 240A
Max. forward voltage: 0.71V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; 35W; TO220FP; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Power dissipation: 35W
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 240A
Max. forward voltage: 0.71V
на замовлення 57 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 95.62 грн |
| 5+ | 79.77 грн |
| 10+ | 70.76 грн |
| 14+ | 60.35 грн |
| 37+ | 56.88 грн |
| IXFX220N17T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 220A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 220A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 170V
Drain current: 220A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
на замовлення 18 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 881.51 грн |
| 2+ | 641.66 грн |
| 3+ | 640.96 грн |
| 4+ | 606.28 грн |
| IXFX320N17T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 320A; 1670W; PLUS247™
Case: PLUS247™
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Power dissipation: 1670W
Gate charge: 640nC
Polarisation: unipolar
Drain current: 320A
Kind of channel: enhanced
Drain-source voltage: 170V
Type of transistor: N-MOSFET
On-state resistance: 5.2mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 170V; 320A; 1670W; PLUS247™
Case: PLUS247™
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Power dissipation: 1670W
Gate charge: 640nC
Polarisation: unipolar
Drain current: 320A
Kind of channel: enhanced
Drain-source voltage: 170V
Type of transistor: N-MOSFET
On-state resistance: 5.2mΩ
товар відсутній
| IXFK200N10P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 830W
Case: TO264
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 830W
Case: TO264
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFB60N80P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 60A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 60A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 60A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 60A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
товар відсутній
| IXFK170N20T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 170A
Power dissipation: 1.15kW
Case: TO264
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 265nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 170A; 1150W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 170A
Power dissipation: 1.15kW
Case: TO264
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 265nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 894.21 грн |
| 2+ | 660.39 грн |
| 4+ | 624.31 грн |
| IXFK170N25X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO264; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 170A
Power dissipation: 890W
Case: TO264
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO264; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 170A
Power dissipation: 890W
Case: TO264
On-state resistance: 7.4mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
товар відсутній
| CLE90UH1200TLB-TRR |
|
Виробник: IXYS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 90A; SMT; SMPD
Electrical mounting: SMT
Max. forward impulse current: 350A
Max. forward voltage: 1.95V
Features of semiconductor devices: with thermistor (NTC)
Max. off-state voltage: 1.2kV
Load current: 90A
Case: SMPD
Type of bridge rectifier: half-controlled
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 90A; SMT; SMPD
Electrical mounting: SMT
Max. forward impulse current: 350A
Max. forward voltage: 1.95V
Features of semiconductor devices: with thermistor (NTC)
Max. off-state voltage: 1.2kV
Load current: 90A
Case: SMPD
Type of bridge rectifier: half-controlled
товар відсутній
| CLE90UH1200TLB-TUB |
|
Виробник: IXYS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 90A; SMT; SMPD
Electrical mounting: SMT
Max. forward impulse current: 350A
Max. forward voltage: 1.95V
Features of semiconductor devices: with thermistor (NTC)
Max. off-state voltage: 1.2kV
Load current: 90A
Case: SMPD
Type of bridge rectifier: half-controlled
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 90A; SMT; SMPD
Electrical mounting: SMT
Max. forward impulse current: 350A
Max. forward voltage: 1.95V
Features of semiconductor devices: with thermistor (NTC)
Max. off-state voltage: 1.2kV
Load current: 90A
Case: SMPD
Type of bridge rectifier: half-controlled
товар відсутній
| CPC1302G |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
Case: DIP8
Mounting: THT
Number of channels: 2
CTR@If: 1000-8000%@1mA
Kind of output: Darlington
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: Darlington; 3.75kV; DIP8
Case: DIP8
Mounting: THT
Number of channels: 2
CTR@If: 1000-8000%@1mA
Kind of output: Darlington
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
на замовлення 398 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 127 грн |
| 5+ | 116.54 грн |
| 9+ | 93.96 грн |
| 24+ | 88.83 грн |
| CPC1302GS |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; 250mV/μs
Mounting: SMD
Number of channels: 2
CTR@If: 1000-8000%@1mA
Slew rate: 0.25V/μs
Kind of output: Darlington
Insulation voltage: 3.75kV
Max. off-state voltage: 5V
Type of optocoupler: optocoupler
Turn-on time: 1µs
Turn-off time: 80µs
Trigger current: 50mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; 250mV/μs
Mounting: SMD
Number of channels: 2
CTR@If: 1000-8000%@1mA
Slew rate: 0.25V/μs
Kind of output: Darlington
Insulation voltage: 3.75kV
Max. off-state voltage: 5V
Type of optocoupler: optocoupler
Turn-on time: 1µs
Turn-off time: 80µs
Trigger current: 50mA
товар відсутній
| CPC1302GSTR |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; 250mV/μs
Mounting: SMD
Number of channels: 2
CTR@If: 1000-8000%@1mA
Slew rate: 0.25V/μs
Kind of output: Darlington
Insulation voltage: 3.75kV
Max. off-state voltage: 5V
Type of optocoupler: optocoupler
Turn-on time: 1µs
Turn-off time: 80µs
Trigger current: 50mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; Uinsul: 3.75kV; 250mV/μs
Mounting: SMD
Number of channels: 2
CTR@If: 1000-8000%@1mA
Slew rate: 0.25V/μs
Kind of output: Darlington
Insulation voltage: 3.75kV
Max. off-state voltage: 5V
Type of optocoupler: optocoupler
Turn-on time: 1µs
Turn-off time: 80µs
Trigger current: 50mA
на замовлення 764 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 201.7 грн |
| 5+ | 159.55 грн |
| 9+ | 94.34 грн |
| 23+ | 89.49 грн |
| VBE100-12NO7 |
|
Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 100A; Ifsm: 415A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 100A
Max. forward impulse current: 415A
Electrical mounting: THT
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
Technology: FRED
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 100A; Ifsm: 415A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 100A
Max. forward impulse current: 415A
Electrical mounting: THT
Version: module
Leads: wire Ø 1.5mm
Case: ECO-PAC 2
Mechanical mounting: screw
Technology: FRED
товар відсутній
| VUO22-12NO1 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 22A; Ifsm: 100A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 22A
Max. forward impulse current: 100A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.12V
Leads: connectors 2,0x0,5mm
Case: V1-A-Pack
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 22A; Ifsm: 100A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 22A
Max. forward impulse current: 100A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 1.12V
Leads: connectors 2,0x0,5mm
Case: V1-A-Pack
Mechanical mounting: screw
товар відсутній
| DPG30C200PC-TRL |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 35ns; TO263AB; Ufmax: 1.51V
Type of diode: rectifying
Technology: HiPerFRED™
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward voltage: 1.51V
Case: TO263AB
Kind of package: reel; tape
Max. forward impulse current: 240A
Power dissipation: 90W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 15Ax2; 35ns; TO263AB; Ufmax: 1.51V
Type of diode: rectifying
Technology: HiPerFRED™
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward voltage: 1.51V
Case: TO263AB
Kind of package: reel; tape
Max. forward impulse current: 240A
Power dissipation: 90W
товар відсутній
| DSA30C45PC |
|
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 15Ax2; D2PAK; reel,tape; 85W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.63V
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 340A
Power dissipation: 85W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 15Ax2; D2PAK; reel,tape; 85W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.63V
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 340A
Power dissipation: 85W
на замовлення 698 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 107.57 грн |
| 5+ | 87.4 грн |
| 10+ | 80.47 грн |
| 11+ | 75.61 грн |
| 29+ | 71.45 грн |
| IXTA26P10T |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
товар відсутній
| IXTP26P10T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
на замовлення 35 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 232.33 грн |
| 3+ | 194.23 грн |
| 6+ | 147.06 грн |
| 15+ | 138.74 грн |
| CPC1540GS |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
On-state resistance: 25Ω
Mounting: SMT
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Switched voltage: max. 350V AC; max. 350V DC
Max. operating current: 120mA
Control current max.: 50mA
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
On-state resistance: 25Ω
Mounting: SMT
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Switched voltage: max. 350V AC; max. 350V DC
Max. operating current: 120mA
Control current max.: 50mA
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
товар відсутній
| IXFH160N15T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 160A
Power dissipation: 880W
Case: TO247-3
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 253nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 160A
Power dissipation: 880W
Case: TO247-3
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 253nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 521.44 грн |
| IXFH76N15T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 76A; 350W; TO247-3; 69ns
Reverse recovery time: 69ns
Drain-source voltage: 150V
Drain current: 76A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 350W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 97nC
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 76A; 350W; TO247-3; 69ns
Reverse recovery time: 69ns
Drain-source voltage: 150V
Drain current: 76A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 350W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 97nC
Kind of channel: enhanced
Mounting: THT
Case: TO247-3
на замовлення 228 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 428.06 грн |
| 3+ | 271.23 грн |
| 9+ | 255.97 грн |
| IXFH96N15P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 96A; 480W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 96A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 96A; 480W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 96A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 473.63 грн |
| 3+ | 299.67 грн |
| IXFK180N15P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 180A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 830W
Case: TO264
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 180A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 830W
Case: TO264
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 16 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 888.23 грн |
| 3+ | 779.7 грн |
| IXFP102N15T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
товар відсутній
| IXFP130N15X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO220AB; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO220AB
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 80ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO220AB; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO220AB
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 80ns
на замовлення 7 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 581.95 грн |
| 3+ | 367.65 грн |
| 6+ | 348.23 грн |
| IXFX180N15P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 180A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 180A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1128.03 грн |
| 2+ | 714.49 грн |
| 4+ | 674.95 грн |
| IXFX240N15T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 5.2mΩ
Mounting: THT
Gate charge: 460nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
товар відсутній
| IXTH240N15X4 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 940W
Case: TO247-3
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 130ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 240A; 940W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 240A
Power dissipation: 940W
Case: TO247-3
On-state resistance: 4.4mΩ
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 130ns
на замовлення 210 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 971.16 грн |
| 2+ | 615.99 грн |
| 4+ | 582.69 грн |
| IXTH88N15 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 88A; 400W; TO247-3; 150ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 88A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 88A; 400W; TO247-3; 150ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 88A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 150ns
товар відсутній
| IXTP102N15T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 97ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 97ns
товар відсутній
| IXTP130N15X4 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 400W; TO220AB; 93ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 93ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 400W; TO220AB; 93ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 93ns
на замовлення 29 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 402.66 грн |
| 3+ | 267.76 грн |
| 9+ | 253.19 грн |
| IXFN300N10P |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 295A; SOT227B; screw; Idm: 900A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 295A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.5mΩ
Pulsed drain current: 900A
Power dissipation: 1.07kW
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 279nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 295A; SOT227B; screw; Idm: 900A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 295A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.5mΩ
Pulsed drain current: 900A
Power dissipation: 1.07kW
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 279nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній
| IXFN300N20X3 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 300A; SOT227B; screw; Idm: 700A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 300A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 3.5mΩ
Pulsed drain current: 700A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate charge: 375nC
Reverse recovery time: 172ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 300A; SOT227B; screw; Idm: 700A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 300A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 3.5mΩ
Pulsed drain current: 700A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate charge: 375nC
Reverse recovery time: 172ns
Gate-source voltage: ±30V
Mechanical mounting: screw
товар відсутній