| Фото | Назва | Виробник | Інформація |
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IXGK50N120C3H1 | IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 460W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 196nC Kind of package: tube Turn-on time: 60ns Turn-off time: 485ns |
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IXYH50N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 750W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 750W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 142nC Kind of package: tube Turn-on time: 96ns Turn-off time: 0.22µs |
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IXYH50N120C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 625W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 625W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 210A Mounting: THT Gate charge: 142nC Kind of package: tube Turn-on time: 96ns Turn-off time: 0.22µs |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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IXYR50N120C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 290W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 32A Power dissipation: 290W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 210A Mounting: THT Gate charge: 142nC Kind of package: tube Turn-on time: 96ns Turn-off time: 0.22µs |
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MCO100-16io1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 1.6kV; 101A; SOT227B; screw Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 1.6kV Load current: 101A Case: SOT227B Max. forward voltage: 1.74V Gate current: 100/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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MDD26-18N1B | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.8kV; If: 36A; TO240AA; Ufmax: 1.05V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 36A Case: TO240AA Max. forward voltage: 1.05V Max. forward impulse current: 0.65kA Electrical mounting: screw Mechanical mounting: screw |
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IXFA130N10T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Power dissipation: 360W Case: TO263 On-state resistance: 10.1mΩ Mounting: SMD Gate charge: 130nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
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IXFH230N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 230A Power dissipation: 650W Case: TO247-3 On-state resistance: 4.7mΩ Mounting: THT Gate charge: 250nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 82ns |
на замовлення 39 шт: термін постачання 21-30 дні (днів) |
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IXFP130N10T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Power dissipation: 360W Case: TO220AB On-state resistance: 10.1mΩ Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
на замовлення 58 шт: термін постачання 21-30 дні (днів) |
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| IXTA130N10T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A Type of transistor: N-MOSFET Technology: TrenchMV™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Pulsed drain current: 350A Power dissipation: 360W Case: TO263 Gate-source voltage: ±30V On-state resistance: 9.1mΩ Mounting: SMD Gate charge: 104nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 77ns |
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| IXTA130N10T-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A Type of transistor: N-MOSFET Technology: TrenchMV™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Pulsed drain current: 350A Power dissipation: 360W Case: TO263 Gate-source voltage: ±30V On-state resistance: 9.1mΩ Mounting: SMD Gate charge: 104nC Kind of package: reel; tape Kind of channel: enhanced Reverse recovery time: 77ns |
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| IXTA130N10T7 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A Type of transistor: N-MOSFET Technology: TrenchMV™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Pulsed drain current: 350A Power dissipation: 360W Case: TO263-7 Gate-source voltage: ±20V On-state resistance: 9.1mΩ Mounting: SMD Gate charge: 104nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 77ns |
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IXTP130N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB; 67ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Power dissipation: 360W Case: TO220AB On-state resistance: 9.1mΩ Mounting: THT Gate charge: 104nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 67ns |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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| MDD810-16N2 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 807A; ComPack; Ufmax: 1.24V Type of module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 807A Case: ComPack Max. forward voltage: 1.24V Max. forward impulse current: 17.3kA Electrical mounting: screw Mechanical mounting: screw |
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IXDD630MYI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO263-5 Output current: -30...30A Number of channels: 1 Supply voltage: 9...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 135ns Turn-off time: 135ns |
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DAA10EM1800PZ-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.14V; 100W Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.8kV Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect Case: TO263ABHV Max. forward voltage: 1.14V Max. forward impulse current: 130A Power dissipation: 100W Kind of package: tube |
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DAA10P1800PZ-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.53V; 100W Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.8kV Load current: 10A Semiconductor structure: double series Features of semiconductor devices: avalanche breakdown effect Case: TO263ABHV Max. forward voltage: 1.53V Max. forward impulse current: 150A Power dissipation: 100W Kind of package: tube |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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| DMA10P1600PZ-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.6kV; 10A; TO263ABHV; Ufmax: 1.21V; 100W Mounting: SMD Power dissipation: 100W Kind of package: tube Type of diode: rectifying Case: TO263ABHV Max. off-state voltage: 1.6kV Max. forward voltage: 1.21V Load current: 10A Semiconductor structure: double series Max. forward impulse current: 100A |
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| DMA10P1800PZ-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.21V; 100W Type of diode: rectifying Power dissipation: 100W Max. off-state voltage: 1.8kV Max. forward impulse current: 100A Semiconductor structure: double series Case: TO263ABHV Mounting: SMD Kind of package: tube Max. forward voltage: 1.21V Load current: 10A |
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IXFQ120N25X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO3P; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 120A Power dissipation: 480W Case: TO3P On-state resistance: 12mΩ Mounting: THT Gate charge: 122nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 140ns |
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IXFT42N50P2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 42A Power dissipation: 830W Case: TO268 On-state resistance: 0.145Ω Mounting: SMD Gate charge: 92nC Kind of package: tube Kind of channel: enhanced |
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PBB150 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; 7Ω; THT Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 7Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 2.5ms Turn-off time: 2.5ms Kind of output: MOSFET |
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PBB150P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; 7Ω; SMT Operating temperature: -40...85°C Mounting: SMT Body dimensions: 9.65x6.35x2.16mm Manufacturer series: OptoMOS Insulation voltage: 3.75kV Case: DIP8 Turn-on time: 2.5ms Switched voltage: max. 250V AC; max. 250V DC Max. operating current: 250mA Turn-off time: 2.5ms Control current max.: 50mA On-state resistance: 7Ω Type of relay: solid state Relay variant: 1-phase; current source Kind of output: MOSFET Contacts configuration: SPST-NC x2 |
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| PBB150PTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; 7Ω; SMT Operating temperature: -40...85°C Mounting: SMT Body dimensions: 9.65x6.35x2.16mm Manufacturer series: OptoMOS Insulation voltage: 3.75kV Case: DIP8 Turn-on time: 2.5ms Switched voltage: max. 250V AC; max. 250V DC Max. operating current: 250mA Turn-off time: 2.5ms Control current max.: 50mA On-state resistance: 7Ω Type of relay: solid state Relay variant: 1-phase; current source Kind of output: MOSFET Contacts configuration: SPST-NC x2 |
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PBB150S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; 7Ω; SMT Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 7Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 2.5ms Turn-off time: 2.5ms Kind of output: MOSFET |
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| PBB150STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; 7Ω; SMT Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 7Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 2.5ms Turn-off time: 2.5ms Kind of output: MOSFET |
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MEK150-04DA | IXYS |
Category: Diode modules Description: Module: diode; common cathode; 400V; If: 150A; TO240AA; Ufmax: 1.4V Max. forward voltage: 1.4V Load current: 150A Semiconductor structure: common cathode Max. forward impulse current: 1.2kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode Case: TO240AA Max. off-state voltage: 0.4kV |
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IXFK150N30P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 150A Power dissipation: 1.3kW Case: TO264 On-state resistance: 19mΩ Mounting: THT Gate charge: 197nC Kind of package: tube Kind of channel: enhanced |
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IXFK150N30X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO264 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 150A Power dissipation: 890W Case: TO264 Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: THT Gate charge: 254nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 167ns |
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IXTP86N20T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 86A; 550W; TO220AB; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 86A Power dissipation: 550W Case: TO220AB On-state resistance: 33mΩ Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 140ns |
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IXTA460P2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO263; 400ns Mounting: SMD Polarisation: unipolar Kind of package: tube Case: TO263 Drain current: 24A On-state resistance: 0.27Ω Type of transistor: N-MOSFET Power dissipation: 480W Features of semiconductor devices: standard power mosfet Gate charge: 48nC Kind of channel: enhanced Reverse recovery time: 400ns Drain-source voltage: 500V |
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IXTH460P2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO247-3; 400ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO247-3 Drain current: 24A On-state resistance: 0.27Ω Type of transistor: N-MOSFET Power dissipation: 480W Features of semiconductor devices: standard power mosfet Gate charge: 48nC Kind of channel: enhanced Reverse recovery time: 400ns Drain-source voltage: 500V |
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IXTP460P2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO220AB; 400ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO220AB Drain current: 24A On-state resistance: 0.27Ω Type of transistor: N-MOSFET Power dissipation: 480W Features of semiconductor devices: standard power mosfet Gate charge: 48nC Kind of channel: enhanced Reverse recovery time: 400ns Drain-source voltage: 500V |
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| MCD250-08io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 800V; 287Ax2; W102; Ufmax: 1.36V; Ifsm: 9kA Kind of package: bulk Max. forward impulse current: 9kA Gate current: 150/200mA Max. forward voltage: 1.36V Mechanical mounting: screw Max. off-state voltage: 0.8kV Electrical mounting: FASTON connectors; screw Load current: 287A x2 Max. load current: 450A Type of module: diode-thyristor Semiconductor structure: double series Threshold on-voltage: 0.85V Case: W102 |
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CPC2907B | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; 0.15Ω Mounting: SMT Manufacturer series: OptoMOS Case: PowerSO8 On-state resistance: 0.15Ω Turn-on time: 2.5ms Turn-off time: 0.25ms Body dimensions: 21.08x10.16x3.3mm Kind of output: MOSFET Insulation voltage: 4kV Contacts configuration: SPST-NO x2 Max. operating current: 2A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 60V AC; max. 60V DC Control current max.: 50mA Operating temperature: -40...85°C |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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CLA30E1200HB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 28mA; TO247AD; THT; tube Max. forward impulse current: 300A Kind of package: tube Gate current: 28mA Load current: 30A Max. load current: 47A Max. off-state voltage: 1.2kV Case: TO247AD Mounting: THT Type of thyristor: thyristor |
на замовлення 293 шт: термін постачання 21-30 дні (днів) |
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IXFT30N85XHV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 30A; 695W; TO268HV; 160ns Mounting: SMD Reverse recovery time: 160ns Power dissipation: 695W Features of semiconductor devices: ultra junction x-class Case: TO268HV Kind of package: tube Gate charge: 68nC Polarisation: unipolar Drain current: 30A Kind of channel: enhanced Drain-source voltage: 850V Type of transistor: N-MOSFET On-state resistance: 0.23Ω |
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| VMM300-03F | IXYS |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 300V; 220A; Y3-DCB; Ugs: ±20V; 1.5kW Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 300V Drain current: 220A Case: Y3-DCB Topology: MOSFET half-bridge Electrical mounting: FASTON connectors; screw Polarisation: unipolar On-state resistance: 7.4mΩ Pulsed drain current: 1.16kA Power dissipation: 1.5kW Technology: HiPerFET™ Gate-source voltage: ±20V Mechanical mounting: screw |
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| MMIX4B22N300 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT x4; BiMOSFET™; 3kV; 22A; 150W; SMPD Case: SMPD Topology: H-bridge Mounting: SMD Power dissipation: 150W Technology: BiMOSFET™ Gate charge: 110nC Kind of package: tube Features of semiconductor devices: high voltage Collector current: 22A Collector-emitter voltage: 3kV Pulsed collector current: 165A Type of transistor: IGBT x4 Turn-on time: 743ns Turn-off time: 1.87µs Gate-emitter voltage: ±20V |
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MDD142-16N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 165A; Y4-M6; Ufmax: 1.05V Case: Y4-M6 Semiconductor structure: double series Max. off-state voltage: 1.6kV Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.05V Max. forward impulse current: 4kA Type of module: diode Max. load current: 300A Load current: 165A |
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CPC1977J | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 100mA Max. operating current: 1.25A Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source On-state resistance: 1Ω Mounting: THT Case: i4-pac Operating temperature: -40...85°C Body dimensions: 19.91x20.88x5.03mm Insulation voltage: 2.5kV Manufacturer series: OptoMOS Turn-on time: 20ms Turn-off time: 5ms Kind of output: MOSFET |
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FUO50-16N | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 50A; Ifsm: 270A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 50A Max. forward impulse current: 270A Electrical mounting: THT Max. forward voltage: 1.04V Case: ISOPLUS i4-pac™ x024a |
на замовлення 189 шт: термін постачання 21-30 дні (днів) |
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| VUE50-12NO1 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 50A; Ifsm: 200A Type of bridge rectifier: three-phase Max. off-state voltage: 1.2kV Load current: 50A Max. forward impulse current: 200A Electrical mounting: FASTON connectors Version: module Max. forward voltage: 2.55V Leads: connectors 2,0x0,5mm Case: V1-A-Pack Mechanical mounting: screw Technology: FRED |
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| CPC1219Y | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; 200mA; max.60VAC; max.60VDC; 16Ω; THT Type of relay: solid state Contacts configuration: SPST-NC Max. operating current: 0.2A Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source On-state resistance: 16Ω Mounting: THT Case: SIP4 Operating temperature: -40...85°C Body dimensions: 19.2x6.4x3.3mm Insulation voltage: 2.5kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
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CPC1333G | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 0.13A Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 30Ω Mounting: THT Case: DIP4 Operating temperature: -40...85°C Body dimensions: 4.57x6.35x3.3mm Insulation voltage: 5kV Manufacturer series: OptoMOS Turn-on time: 2ms Turn-off time: 3ms Kind of output: MOSFET |
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CPC1333GR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 0.13A Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 30Ω Mounting: SMT Case: DIP4 Operating temperature: -40...85°C Body dimensions: 4.57x6.35x3.3mm Insulation voltage: 5kV Manufacturer series: OptoMOS Turn-on time: 2ms Turn-off time: 3ms Kind of output: MOSFET |
на замовлення 232 шт: термін постачання 21-30 дні (днів) |
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| CPC1333GRTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 0.13A Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 30Ω Mounting: SMT Case: DIP4 Operating temperature: -40...85°C Body dimensions: 4.57x6.35x3.3mm Insulation voltage: 5kV Manufacturer series: OptoMOS Turn-on time: 2ms Turn-off time: 3ms Kind of output: MOSFET |
товар відсутній |
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 |
CPC2125N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; 35Ω; SMT Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 400V AC; max. 400V DC Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: SO8 Operating temperature: -40...85°C Body dimensions: 9.35x3.81x2.18mm Insulation voltage: 1.5kV Manufacturer series: OptoMOS Turn-on time: 2ms Turn-off time: 2ms Kind of output: MOSFET |
товар відсутній |
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| CPC2125NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; 35Ω; SMT Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 400V AC; max. 400V DC Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: SO8 Operating temperature: -40...85°C Body dimensions: 9.35x3.81x2.18mm Insulation voltage: 1.5kV Manufacturer series: OptoMOS Turn-on time: 2ms Turn-off time: 2ms Kind of output: MOSFET |
товар відсутній |
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 |
LBB110 | IXYS |
 Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; 35Ω; THT Mounting: THT Manufacturer series: OptoMOS Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Contacts configuration: SPST-NC x2 Insulation voltage: 3.75kV Turn-on time: 3ms Switched voltage: max. 350V AC; max. 350V DC Case: DIP8 Max. operating current: 120mA Turn-off time: 3ms Control current max.: 50mA On-state resistance: 35Ω Type of relay: solid state Relay variant: 1-phase; current source Kind of output: MOSFET |
на замовлення 117 шт: термін постачання 21-30 дні (днів) |
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 |
LBB110P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; 35Ω; SMT Mounting: SMT Manufacturer series: OptoMOS Operating temperature: -40...85°C Body dimensions: 9.66x6.35x2.16mm Contacts configuration: SPST-NC x2 Insulation voltage: 3.75kV Turn-on time: 3ms Switched voltage: max. 350V AC; max. 350V DC Case: DIP8 Max. operating current: 120mA Turn-off time: 3ms Control current max.: 50mA On-state resistance: 35Ω Type of relay: solid state Relay variant: 1-phase; current source Kind of output: MOSFET |
товар відсутній |
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| LBB110PTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; 35Ω; SMT Mounting: SMT Manufacturer series: OptoMOS Operating temperature: -40...85°C Body dimensions: 9.66x6.35x2.16mm Contacts configuration: SPST-NC x2 Insulation voltage: 3.75kV Turn-on time: 3ms Switched voltage: max. 350V AC; max. 350V DC Case: DIP8 Max. operating current: 120mA Turn-off time: 3ms Control current max.: 50mA On-state resistance: 35Ω Type of relay: solid state Relay variant: 1-phase; current source Kind of output: MOSFET |
товар відсутній |
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 |
LBB110S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; 35Ω; SMT Mounting: SMT Manufacturer series: OptoMOS Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Contacts configuration: SPST-NC x2 Insulation voltage: 3.75kV Turn-on time: 3ms Switched voltage: max. 350V AC; max. 350V DC Case: DIP8 Max. operating current: 120mA Turn-off time: 3ms Control current max.: 50mA On-state resistance: 35Ω Type of relay: solid state Relay variant: 1-phase; current source Kind of output: MOSFET |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
|
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| LBB110STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; 35Ω; SMT Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
товар відсутній |
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 |
LBB120 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; 20Ω; THT Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 20Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
на замовлення 99 шт: термін постачання 21-30 дні (днів) |
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LBB120S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; 20Ω; SMT Mounting: SMT Case: DIP8 Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NC x2 Max. operating current: 0.17A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC Control current max.: 50mA Manufacturer series: OptoMOS Operating temperature: -40...85°C On-state resistance: 20Ω Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 9.65x6.35x3.3mm |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
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| LBB120STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; 20Ω; SMT Mounting: SMT Case: DIP8 Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NC x2 Max. operating current: 0.17A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 250V AC; max. 250V DC Control current max.: 50mA Manufacturer series: OptoMOS Operating temperature: -40...85°C On-state resistance: 20Ω Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 9.65x6.35x3.3mm |
товар відсутній |
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 |
LBB126 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; 15Ω; THT Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 15Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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LBB126P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; 15Ω; SMT Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 15Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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| LBB126PTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; 15Ω; SMT Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source On-state resistance: 15Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
товар відсутній |
| IXGK50N120C3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 460W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 485ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 460W
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 485ns
товар відсутній
| IXYH50N120C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
товар відсутній
| IXYH50N120C3D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 210A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 210A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
на замовлення 14 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 967.28 грн |
| 2+ | 643.6 грн |
| 4+ | 608.75 грн |
| IXYR50N120C3D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 290W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 32A
Power dissipation: 290W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 210A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 290W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 32A
Power dissipation: 290W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 210A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
товар відсутній
| MCO100-16io1 |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 101A; SOT227B; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 101A
Case: SOT227B
Max. forward voltage: 1.74V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 101A; SOT227B; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 101A
Case: SOT227B
Max. forward voltage: 1.74V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| MDD26-18N1B |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 36A; TO240AA; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 36A
Case: TO240AA
Max. forward voltage: 1.05V
Max. forward impulse current: 0.65kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 36A; TO240AA; Ufmax: 1.05V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 36A
Case: TO240AA
Max. forward voltage: 1.05V
Max. forward impulse current: 0.65kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| IXFA130N10T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
на замовлення 60 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 235.88 грн |
| 3+ | 196.28 грн |
| 10+ | 183.48 грн |
| 50+ | 179.21 грн |
| IXFH230N10T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 230A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 82ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 230A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 82ns
на замовлення 39 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 457.98 грн |
| 3+ | 382.6 грн |
| 6+ | 371.22 грн |
| 10+ | 357 грн |
| IXFP130N10T2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 10.1mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 10.1mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
на замовлення 58 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 285.67 грн |
| 3+ | 238.24 грн |
| 5+ | 192.72 грн |
| 12+ | 182.77 грн |
| 50+ | 182.06 грн |
| IXTA130N10T |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 77ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 77ns
товар відсутній
| IXTA130N10T-TRL |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhanced
Reverse recovery time: 77ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhanced
Reverse recovery time: 77ns
товар відсутній
| IXTA130N10T7 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 77ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Technology: TrenchMV™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 77ns
товар відсутній
| IXTP130N10T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB; 67ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 9.1mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 67ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB; 67ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 9.1mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 67ns
на замовлення 23 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 201.42 грн |
| 3+ | 168.54 грн |
| 7+ | 136.54 грн |
| 17+ | 129.43 грн |
| MDD810-16N2 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 807A; ComPack; Ufmax: 1.24V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 807A
Case: ComPack
Max. forward voltage: 1.24V
Max. forward impulse current: 17.3kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 807A; ComPack; Ufmax: 1.24V
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 807A
Case: ComPack
Max. forward voltage: 1.24V
Max. forward impulse current: 17.3kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
| IXDD630MYI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 9...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 9...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
товар відсутній
| DAA10EM1800PZ-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.14V; 100W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.8kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Case: TO263ABHV
Max. forward voltage: 1.14V
Max. forward impulse current: 130A
Power dissipation: 100W
Kind of package: tube
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.14V; 100W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.8kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Case: TO263ABHV
Max. forward voltage: 1.14V
Max. forward impulse current: 130A
Power dissipation: 100W
Kind of package: tube
товар відсутній
| DAA10P1800PZ-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.53V; 100W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.8kV
Load current: 10A
Semiconductor structure: double series
Features of semiconductor devices: avalanche breakdown effect
Case: TO263ABHV
Max. forward voltage: 1.53V
Max. forward impulse current: 150A
Power dissipation: 100W
Kind of package: tube
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.53V; 100W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.8kV
Load current: 10A
Semiconductor structure: double series
Features of semiconductor devices: avalanche breakdown effect
Case: TO263ABHV
Max. forward voltage: 1.53V
Max. forward impulse current: 150A
Power dissipation: 100W
Kind of package: tube
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 283.37 грн |
| 3+ | 232.55 грн |
| 5+ | 199.12 грн |
| 12+ | 188.46 грн |
| DMA10P1600PZ-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 10A; TO263ABHV; Ufmax: 1.21V; 100W
Mounting: SMD
Power dissipation: 100W
Kind of package: tube
Type of diode: rectifying
Case: TO263ABHV
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.21V
Load current: 10A
Semiconductor structure: double series
Max. forward impulse current: 100A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 10A; TO263ABHV; Ufmax: 1.21V; 100W
Mounting: SMD
Power dissipation: 100W
Kind of package: tube
Type of diode: rectifying
Case: TO263ABHV
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.21V
Load current: 10A
Semiconductor structure: double series
Max. forward impulse current: 100A
товар відсутній
| DMA10P1800PZ-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.21V; 100W
Type of diode: rectifying
Power dissipation: 100W
Max. off-state voltage: 1.8kV
Max. forward impulse current: 100A
Semiconductor structure: double series
Case: TO263ABHV
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.21V
Load current: 10A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.21V; 100W
Type of diode: rectifying
Power dissipation: 100W
Max. off-state voltage: 1.8kV
Max. forward impulse current: 100A
Semiconductor structure: double series
Case: TO263ABHV
Mounting: SMD
Kind of package: tube
Max. forward voltage: 1.21V
Load current: 10A
товар відсутній
| IXFQ120N25X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO3P; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO3P
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO3P; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 480W
Case: TO3P
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
товар відсутній
| IXFT42N50P2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 42A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 42A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| PBB150 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; 7Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; 7Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
товар відсутній
| PBB150P |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; 7Ω; SMT
Operating temperature: -40...85°C
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Case: DIP8
Turn-on time: 2.5ms
Switched voltage: max. 250V AC; max. 250V DC
Max. operating current: 250mA
Turn-off time: 2.5ms
Control current max.: 50mA
On-state resistance: 7Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Contacts configuration: SPST-NC x2
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; 7Ω; SMT
Operating temperature: -40...85°C
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Case: DIP8
Turn-on time: 2.5ms
Switched voltage: max. 250V AC; max. 250V DC
Max. operating current: 250mA
Turn-off time: 2.5ms
Control current max.: 50mA
On-state resistance: 7Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Contacts configuration: SPST-NC x2
товар відсутній
| PBB150PTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; 7Ω; SMT
Operating temperature: -40...85°C
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Case: DIP8
Turn-on time: 2.5ms
Switched voltage: max. 250V AC; max. 250V DC
Max. operating current: 250mA
Turn-off time: 2.5ms
Control current max.: 50mA
On-state resistance: 7Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Contacts configuration: SPST-NC x2
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; 7Ω; SMT
Operating temperature: -40...85°C
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Case: DIP8
Turn-on time: 2.5ms
Switched voltage: max. 250V AC; max. 250V DC
Max. operating current: 250mA
Turn-off time: 2.5ms
Control current max.: 50mA
On-state resistance: 7Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Contacts configuration: SPST-NC x2
товар відсутній
| PBB150S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; 7Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; 7Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
товар відсутній
| PBB150STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; 7Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 250mA; 7Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Kind of output: MOSFET
товар відсутній
| MEK150-04DA |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 400V; If: 150A; TO240AA; Ufmax: 1.4V
Max. forward voltage: 1.4V
Load current: 150A
Semiconductor structure: common cathode
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
Max. off-state voltage: 0.4kV
Category: Diode modules
Description: Module: diode; common cathode; 400V; If: 150A; TO240AA; Ufmax: 1.4V
Max. forward voltage: 1.4V
Load current: 150A
Semiconductor structure: common cathode
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
Max. off-state voltage: 0.4kV
товар відсутній
| IXFK150N30P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 150A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 19mΩ
Mounting: THT
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFK150N30X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 890W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 167ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 890W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 167ns
товар відсутній
| IXTP86N20T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 86A; 550W; TO220AB; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 86A
Power dissipation: 550W
Case: TO220AB
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 140ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 86A; 550W; TO220AB; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 86A
Power dissipation: 550W
Case: TO220AB
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 140ns
товар відсутній
| IXTA460P2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO263; 400ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Drain current: 24A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: standard power mosfet
Gate charge: 48nC
Kind of channel: enhanced
Reverse recovery time: 400ns
Drain-source voltage: 500V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO263; 400ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO263
Drain current: 24A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: standard power mosfet
Gate charge: 48nC
Kind of channel: enhanced
Reverse recovery time: 400ns
Drain-source voltage: 500V
товар відсутній
| IXTH460P2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO247-3; 400ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Drain current: 24A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: standard power mosfet
Gate charge: 48nC
Kind of channel: enhanced
Reverse recovery time: 400ns
Drain-source voltage: 500V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO247-3; 400ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247-3
Drain current: 24A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: standard power mosfet
Gate charge: 48nC
Kind of channel: enhanced
Reverse recovery time: 400ns
Drain-source voltage: 500V
товар відсутній
| IXTP460P2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO220AB; 400ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO220AB
Drain current: 24A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: standard power mosfet
Gate charge: 48nC
Kind of channel: enhanced
Reverse recovery time: 400ns
Drain-source voltage: 500V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO220AB; 400ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO220AB
Drain current: 24A
On-state resistance: 0.27Ω
Type of transistor: N-MOSFET
Power dissipation: 480W
Features of semiconductor devices: standard power mosfet
Gate charge: 48nC
Kind of channel: enhanced
Reverse recovery time: 400ns
Drain-source voltage: 500V
товар відсутній
| MCD250-08io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 287Ax2; W102; Ufmax: 1.36V; Ifsm: 9kA
Kind of package: bulk
Max. forward impulse current: 9kA
Gate current: 150/200mA
Max. forward voltage: 1.36V
Mechanical mounting: screw
Max. off-state voltage: 0.8kV
Electrical mounting: FASTON connectors; screw
Load current: 287A x2
Max. load current: 450A
Type of module: diode-thyristor
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: W102
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 287Ax2; W102; Ufmax: 1.36V; Ifsm: 9kA
Kind of package: bulk
Max. forward impulse current: 9kA
Gate current: 150/200mA
Max. forward voltage: 1.36V
Mechanical mounting: screw
Max. off-state voltage: 0.8kV
Electrical mounting: FASTON connectors; screw
Load current: 287A x2
Max. load current: 450A
Type of module: diode-thyristor
Semiconductor structure: double series
Threshold on-voltage: 0.85V
Case: W102
товар відсутній
| CPC2907B |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; 0.15Ω
Mounting: SMT
Manufacturer series: OptoMOS
Case: PowerSO8
On-state resistance: 0.15Ω
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Body dimensions: 21.08x10.16x3.3mm
Kind of output: MOSFET
Insulation voltage: 4kV
Contacts configuration: SPST-NO x2
Max. operating current: 2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; 0.15Ω
Mounting: SMT
Manufacturer series: OptoMOS
Case: PowerSO8
On-state resistance: 0.15Ω
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Body dimensions: 21.08x10.16x3.3mm
Kind of output: MOSFET
Insulation voltage: 4kV
Contacts configuration: SPST-NO x2
Max. operating current: 2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Operating temperature: -40...85°C
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1066.84 грн |
| 2+ | 471.5 грн |
| 5+ | 445.18 грн |
| CLA30E1200HB |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 28mA; TO247AD; THT; tube
Max. forward impulse current: 300A
Kind of package: tube
Gate current: 28mA
Load current: 30A
Max. load current: 47A
Max. off-state voltage: 1.2kV
Case: TO247AD
Mounting: THT
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 28mA; TO247AD; THT; tube
Max. forward impulse current: 300A
Kind of package: tube
Gate current: 28mA
Load current: 30A
Max. load current: 47A
Max. off-state voltage: 1.2kV
Case: TO247AD
Mounting: THT
Type of thyristor: thyristor
на замовлення 293 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 240.48 грн |
| 3+ | 196.99 грн |
| 5+ | 177.79 грн |
| 13+ | 167.83 грн |
| 30+ | 165.7 грн |
| IXFT30N85XHV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 30A; 695W; TO268HV; 160ns
Mounting: SMD
Reverse recovery time: 160ns
Power dissipation: 695W
Features of semiconductor devices: ultra junction x-class
Case: TO268HV
Kind of package: tube
Gate charge: 68nC
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhanced
Drain-source voltage: 850V
Type of transistor: N-MOSFET
On-state resistance: 0.23Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 30A; 695W; TO268HV; 160ns
Mounting: SMD
Reverse recovery time: 160ns
Power dissipation: 695W
Features of semiconductor devices: ultra junction x-class
Case: TO268HV
Kind of package: tube
Gate charge: 68nC
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhanced
Drain-source voltage: 850V
Type of transistor: N-MOSFET
On-state resistance: 0.23Ω
товар відсутній
| VMM300-03F |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 300V; 220A; Y3-DCB; Ugs: ±20V; 1.5kW
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 300V
Drain current: 220A
Case: Y3-DCB
Topology: MOSFET half-bridge
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 7.4mΩ
Pulsed drain current: 1.16kA
Power dissipation: 1.5kW
Technology: HiPerFET™
Gate-source voltage: ±20V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 300V; 220A; Y3-DCB; Ugs: ±20V; 1.5kW
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 300V
Drain current: 220A
Case: Y3-DCB
Topology: MOSFET half-bridge
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 7.4mΩ
Pulsed drain current: 1.16kA
Power dissipation: 1.5kW
Technology: HiPerFET™
Gate-source voltage: ±20V
Mechanical mounting: screw
товар відсутній
| MMIX4B22N300 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT x4; BiMOSFET™; 3kV; 22A; 150W; SMPD
Case: SMPD
Topology: H-bridge
Mounting: SMD
Power dissipation: 150W
Technology: BiMOSFET™
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: high voltage
Collector current: 22A
Collector-emitter voltage: 3kV
Pulsed collector current: 165A
Type of transistor: IGBT x4
Turn-on time: 743ns
Turn-off time: 1.87µs
Gate-emitter voltage: ±20V
Category: SMD IGBT transistors
Description: Transistor: IGBT x4; BiMOSFET™; 3kV; 22A; 150W; SMPD
Case: SMPD
Topology: H-bridge
Mounting: SMD
Power dissipation: 150W
Technology: BiMOSFET™
Gate charge: 110nC
Kind of package: tube
Features of semiconductor devices: high voltage
Collector current: 22A
Collector-emitter voltage: 3kV
Pulsed collector current: 165A
Type of transistor: IGBT x4
Turn-on time: 743ns
Turn-off time: 1.87µs
Gate-emitter voltage: ±20V
товар відсутній
| MDD142-16N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 165A; Y4-M6; Ufmax: 1.05V
Case: Y4-M6
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.05V
Max. forward impulse current: 4kA
Type of module: diode
Max. load current: 300A
Load current: 165A
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 165A; Y4-M6; Ufmax: 1.05V
Case: Y4-M6
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.05V
Max. forward impulse current: 4kA
Type of module: diode
Max. load current: 300A
Load current: 165A
товар відсутній
| CPC1977J |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 1.25A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 1Ω
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 1.25A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 1Ω
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Body dimensions: 19.91x20.88x5.03mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 20ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
| FUO50-16N |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 50A; Ifsm: 270A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 50A
Max. forward impulse current: 270A
Electrical mounting: THT
Max. forward voltage: 1.04V
Case: ISOPLUS i4-pac™ x024a
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 50A; Ifsm: 270A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 50A
Max. forward impulse current: 270A
Electrical mounting: THT
Max. forward voltage: 1.04V
Case: ISOPLUS i4-pac™ x024a
на замовлення 189 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1280.52 грн |
| 2+ | 1124.34 грн |
| 25+ | 1087.36 грн |
| VUE50-12NO1 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 50A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 50A
Max. forward impulse current: 200A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 2.55V
Leads: connectors 2,0x0,5mm
Case: V1-A-Pack
Mechanical mounting: screw
Technology: FRED
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 50A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 50A
Max. forward impulse current: 200A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 2.55V
Leads: connectors 2,0x0,5mm
Case: V1-A-Pack
Mechanical mounting: screw
Technology: FRED
товар відсутній
| CPC1219Y |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; 200mA; max.60VAC; max.60VDC; 16Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NC
Max. operating current: 0.2A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x6.4x3.3mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; 200mA; max.60VAC; max.60VDC; 16Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NC
Max. operating current: 0.2A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 19.2x6.4x3.3mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
| CPC1333G |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
| CPC1333GR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 232 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 196.06 грн |
| 10+ | 87.47 грн |
| 26+ | 82.49 грн |
| CPC1333GRTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
| CPC2125N |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; 35Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; 35Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
товар відсутній
| CPC2125NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; 35Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; 35Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Body dimensions: 9.35x3.81x2.18mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
товар відсутній
| LBB110 | |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; 35Ω; THT
Mounting: THT
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Contacts configuration: SPST-NC x2
Insulation voltage: 3.75kV
Turn-on time: 3ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Max. operating current: 120mA
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 35Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; 35Ω; THT
Mounting: THT
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Contacts configuration: SPST-NC x2
Insulation voltage: 3.75kV
Turn-on time: 3ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Max. operating current: 120mA
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 35Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
на замовлення 117 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 582.05 грн |
| 4+ | 246.06 грн |
| 10+ | 232.55 грн |
| LBB110P |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; 35Ω; SMT
Mounting: SMT
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Contacts configuration: SPST-NC x2
Insulation voltage: 3.75kV
Turn-on time: 3ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Max. operating current: 120mA
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 35Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; 35Ω; SMT
Mounting: SMT
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Contacts configuration: SPST-NC x2
Insulation voltage: 3.75kV
Turn-on time: 3ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Max. operating current: 120mA
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 35Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
товар відсутній
| LBB110PTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; 35Ω; SMT
Mounting: SMT
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Contacts configuration: SPST-NC x2
Insulation voltage: 3.75kV
Turn-on time: 3ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Max. operating current: 120mA
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 35Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; 35Ω; SMT
Mounting: SMT
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Contacts configuration: SPST-NC x2
Insulation voltage: 3.75kV
Turn-on time: 3ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Max. operating current: 120mA
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 35Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
товар відсутній
| LBB110S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; 35Ω; SMT
Mounting: SMT
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Contacts configuration: SPST-NC x2
Insulation voltage: 3.75kV
Turn-on time: 3ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Max. operating current: 120mA
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 35Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; 35Ω; SMT
Mounting: SMT
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Contacts configuration: SPST-NC x2
Insulation voltage: 3.75kV
Turn-on time: 3ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP8
Max. operating current: 120mA
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 35Ω
Type of relay: solid state
Relay variant: 1-phase; current source
Kind of output: MOSFET
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 582.05 грн |
| 4+ | 246.06 грн |
| 10+ | 232.55 грн |
| LBB110STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; 35Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; 35Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
| LBB120 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; 20Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; 20Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 20Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 99 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 611.16 грн |
| 4+ | 258.15 грн |
| 9+ | 243.93 грн |
| LBB120S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; 20Ω; SMT
Mounting: SMT
Case: DIP8
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC x2
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
On-state resistance: 20Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; 20Ω; SMT
Mounting: SMT
Case: DIP8
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC x2
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
On-state resistance: 20Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
на замовлення 60 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 961.92 грн |
| 2+ | 428.12 грн |
| 6+ | 404.65 грн |
| LBB120STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; 20Ω; SMT
Mounting: SMT
Case: DIP8
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC x2
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
On-state resistance: 20Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; 20Ω; SMT
Mounting: SMT
Case: DIP8
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NC x2
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
On-state resistance: 20Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x3.3mm
товар відсутній
| LBB126 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; 15Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; 15Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 650.98 грн |
| 3+ | 275.22 грн |
| 9+ | 260.28 грн |
| LBB126P |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; 15Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; 15Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 650.98 грн |
| 3+ | 275.22 грн |
| 9+ | 260.28 грн |
| LBB126PTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; 15Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; 15Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній