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LBB126P LBB126P IXYS LBB126.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; 15Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
1+650.98 грн
3+ 275.22 грн
9+ 260.28 грн
LBB126PTR IXYS LBB126.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; 15Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
LBB127 LBB127 IXYS LBB127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; 10Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
LBB127P LBB127P IXYS LBB127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; 10Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 80 шт:
термін постачання 21-30 дні (днів)
1+681.62 грн
3+ 288.02 грн
8+ 272.37 грн
LBB127PTR IXYS LBB127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; 10Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
LBB127S LBB127S IXYS LBB127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; 10Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 75 шт:
термін постачання 21-30 дні (днів)
1+681.62 грн
3+ 288.02 грн
8+ 272.37 грн
LBB127STR IXYS LBB127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; 10Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
IXFK120N20P IXFK120N20P IXYS IXFH(K)120N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 120A; 714W; TO264; 100ns
Case: TO264
Mounting: THT
Kind of package: tube
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 714W
Polarisation: unipolar
Gate charge: 152nC
Kind of channel: enhanced
Reverse recovery time: 100ns
Drain-source voltage: 200V
Drain current: 120A
товар відсутній
IXFK120N25P IXFK120N25P IXYS IXFK(X)120N25P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 700W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXFK120N30P3 IXFK120N30P3 IXYS IXFK(X)120N30P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 1.13kW
Case: TO264
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXFK120N30T IXFK120N30T IXYS IXFK(X)120N30T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 265nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+1120.45 грн
IXFT180N20X3HV IXFT180N20X3HV IXYS IXF_180N20X3_HV.pdf 200VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO268
Mounting: SMD
Case: TO268
Kind of package: tube
Power dissipation: 780W
Gate charge: 154nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 180A
Kind of channel: enhanced
Drain-source voltage: 200V
Type of transistor: N-MOSFET
On-state resistance: 7.5mΩ
Gate-source voltage: ±20V
Reverse recovery time: 94ns
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
1+886.87 грн
3+ 778.72 грн
IXTQ69N30P IXTQ69N30P IXYS IXTQ69N30P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 69A; 500W; TO3P; 330ns
Mounting: THT
Case: TO3P
Power dissipation: 500W
Kind of package: tube
Polarisation: unipolar
Gate charge: 156nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 330ns
Drain-source voltage: 300V
Drain current: 69A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
товар відсутній
IXTA110N12T2 IXTA110N12T2 IXYS IXTA(P)110N12T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 110A; 517W; TO263; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 110A
Power dissipation: 517W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 64ns
товар відсутній
DMA150YA1600NA DMA150YA1600NA IXYS DMA150YA1600NA.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 1.6kV; If: 150A
Case: SOT227B
Mechanical mounting: screw
Version: module
Type of bridge rectifier: three-phase half bridge
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.16V
Load current: 150A
Semiconductor structure: common anode
Max. forward impulse current: 800A
Electrical mounting: screw
товар відсутній
DMA150YC1600NA DMA150YC1600NA IXYS DMA150YC1600NA.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 1.6kV; If: 150A
Case: SOT227B
Mechanical mounting: screw
Version: module
Type of bridge rectifier: three-phase half bridge
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.16V
Load current: 150A
Semiconductor structure: common cathode
Max. forward impulse current: 700A
Electrical mounting: screw
товар відсутній
PLB150 PLB150 IXYS PLB150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 2.5ms
Kind of output: MOSFET
товар відсутній
PLB150STR IXYS PLB150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 2.5ms
Kind of output: MOSFET
товар відсутній
PLB171P PLB171P IXYS PLB171.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 82 шт:
термін постачання 21-30 дні (днів)
1+631.07 грн
4+ 266.68 грн
9+ 251.75 грн
PLB171PTR IXYS PLB171.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
IXTH1N300P3HV IXTH1N300P3HV IXYS IXTH(T)1N300P3HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO247HV; 1.8us
Case: TO247HV
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 1.8µs
Drain-source voltage: 3kV
Drain current: 1A
On-state resistance: 50Ω
Type of transistor: N-MOSFET
Power dissipation: 195W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
товар відсутній
IXTN22N100L IXTN22N100L IXYS IXTN22N100L.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 22A; SOT227B; screw; Idm: 50A; 700W
Reverse recovery time: 1µs
Drain-source voltage: 1kV
Drain current: 22A
On-state resistance: 0.6Ω
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 0.27µC
Technology: Linear™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 50A
Case: SOT227B
Semiconductor structure: single transistor
товар відсутній
IXTX22N100L IXTX22N100L IXYS IXTK(X)22N100L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; PLUS247™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
товар відсутній
MCC310-08io1 IXYS MCC310,MCD310.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 320A; Y2; Ufmax: 1.32V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 320A
Case: Y2
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MCC310-12io1 IXYS MCC310,MCD310.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 320A; Y2; Ufmax: 1.32V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 320A
Case: Y2
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MCC310-14io1 IXYS MCC310,MCD310.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 320A; Y2; Ufmax: 1.32V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 320A
Case: Y2
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MCC310-16io1 MCC310-16io1 IXYS MCC310-16IO1.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 320A; Y2-DCB; Ufmax: 1.32V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.32V
Max. forward impulse current: 9.8kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MCC310-18io1 IXYS MCC310,MCD310.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 320A; Y2; Ufmax: 1.32V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 320A
Case: Y2
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
IXDD604PI IXDD604PI IXYS IXDD604PI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 164 шт:
термін постачання 21-30 дні (днів)
4+95.29 грн
10+ 83.92 грн
11+ 75.38 грн
31+ 71.12 грн
Мінімальне замовлення: 4
IXDD604SI IXDD604SI IXYS IXDD604PI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 291 шт:
термін постачання 21-30 дні (днів)
3+183.81 грн
5+ 151.48 грн
7+ 136.54 грн
17+ 129.43 грн
100+ 127.3 грн
Мінімальне замовлення: 3
IXDD604SIA IXDD604SIA IXYS IXDD604PI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 867 шт:
термін постачання 21-30 дні (днів)
4+111.05 грн
5+ 92.45 грн
11+ 76.8 грн
30+ 72.54 грн
Мінімальне замовлення: 4
IXDD604SITR IXYS media?resourcetype=datasheets&itemid=51c553d5-8743-4929-9e5d-d0aaeff05d77&filename=ixd-604 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
товар відсутній
IXDD609CI IXDD609CI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 882 шт:
термін постачання 21-30 дні (днів)
2+199.12 грн
5+ 163.57 грн
6+ 148.63 грн
10+ 147.21 грн
16+ 140.1 грн
50+ 137.25 грн
Мінімальне замовлення: 2
IXDD609SI IXDD609SI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 856 шт:
термін постачання 21-30 дні (днів)
3+163.89 грн
5+ 134.41 грн
7+ 121.61 грн
19+ 115.21 грн
100+ 113.07 грн
Мінімальне замовлення: 3
IXDD609SIA IXDD609SIA IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 540 шт:
термін постачання 21-30 дні (днів)
4+97.26 грн
5+ 80.36 грн
12+ 72.54 грн
32+ 68.98 грн
100+ 66.85 грн
Мінімальне замовлення: 4
IXDD609SITR IXYS media?resourcetype=datasheets&itemid=2E0352F3-1549-4FD2-9F7B-077F71DF5397&filename=IXD-609 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
товар відсутній
IXDD609YI IXDD609YI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 888 шт:
термін постачання 21-30 дні (днів)
2+222.1 грн
3+ 184.9 грн
6+ 153.61 грн
15+ 145.08 грн
Мінімальне замовлення: 2
IXDD614CI IXDD614CI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 885 шт:
термін постачання 21-30 дні (днів)
2+317.83 грн
3+ 260.99 грн
4+ 245.35 грн
10+ 231.84 грн
50+ 222.59 грн
Мінімальне замовлення: 2
IXDD614PI IXDD614PI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 1084 шт:
термін постачання 21-30 дні (днів)
3+162.36 грн
5+ 135.83 грн
8+ 108.81 грн
22+ 102.41 грн
Мінімальне замовлення: 3
IXDD614SI IXDD614SI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 802 шт:
термін постачання 21-30 дні (днів)
2+248.9 грн
5+ 184.9 грн
13+ 174.94 грн
100+ 170.68 грн
Мінімальне замовлення: 2
IXDD614SITR IXYS media?resourcetype=datasheets&itemid=bbefd2e4-4fe5-4ed7-ad75-4663bafc6c83&filename=ixd-614si Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
товар відсутній
IXDD614YI IXDD614YI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 649 шт:
термін постачання 21-30 дні (днів)
2+353.06 грн
3+ 295.13 грн
4+ 248.19 грн
10+ 234.68 грн
250+ 225.44 грн
Мінімальне замовлення: 2
IXDD630CI IXDD630CI IXYS IXD_630.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
на замовлення 244 шт:
термін постачання 21-30 дні (днів)
1+643.32 грн
2+ 430.25 грн
6+ 406.78 грн
IXDD630MCI IXDD630MCI IXYS IXD_630.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 9...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
товар відсутній
IXDD630YI IXDD630YI IXYS IXD_630.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
товар відсутній
CPC1510GSTR IXYS CPC1510.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Mounting: SMT
Operating temperature: -40...85°C
Max. operating current: 0.2A
On-state resistance: 15Ω
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
товар відсутній
CPC1540GSTR IXYS CPC1540.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Max. operating current: 120mA
Manufacturer series: OptoMOS
On-state resistance: 25Ω
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
товар відсутній
CPC1560GSTR IXYS CPC1560.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Max. operating current: 300mA
On-state resistance: 5.6Ω
Turn-on time: 0.1ms
Turn-off time: 400µs
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
товар відсутній
CPC1563GSTR IXYS CPC1563.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Max. operating current: 120mA
Manufacturer series: OptoMOS
On-state resistance: 35Ω
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 600V AC; max. 600V DC
Control current max.: 50mA
товар відсутній
CPC1593GSTR IXYS CPC1593.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Max. operating current: 120mA
Manufacturer series: OptoMOS
On-state resistance: 35Ω
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 600V AC; max. 600V DC
Control current max.: 50mA
товар відсутній
DSEI12-06A DSEI12-06A IXYS DSEI12-06A.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 14A; tube; Ifsm: 100A; TO220AC; 62W
Mounting: THT
Kind of package: tube
Power dissipation: 62W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.39mm
Case: TO220AC
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.5V
Load current: 14A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 100A
на замовлення 195 шт:
термін постачання 21-30 дні (днів)
3+125.16 грн
9+ 100.27 грн
24+ 94.58 грн
Мінімальне замовлення: 3
DSEI12-12A DSEI12-12A IXYS DSEI12-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 11A; tube; Ifsm: 75A; TO220AC; 78W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 11A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 75A
Case: TO220AC
Max. forward voltage: 2.2V
Heatsink thickness: 1.14...1.39mm
Power dissipation: 78W
Reverse recovery time: 50ns
Technology: FRED
на замовлення 313 шт:
термін постачання 21-30 дні (днів)
3+133.7 грн
8+ 107.38 грн
22+ 100.98 грн
250+ 98.85 грн
Мінімальне замовлення: 3
DSEI12-12AZ-TUB IXYS DSEI12-12AZ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 11A; 50ns; TO263ABHV; Ufmax: 2.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 11A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 75A
Case: TO263ABHV
Max. forward voltage: 2.2V
Power dissipation: 78W
Reverse recovery time: 50ns
Technology: FRED
товар відсутній
DSEI120-06A DSEI120-06A IXYS DSEI120-06A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 126A; tube; Ifsm: 540A; TO247-2; 357W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 126A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 540A
Case: TO247-2
Max. forward voltage: 1.12V
Power dissipation: 357W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 236 шт:
термін постачання 21-30 дні (днів)
1+829.43 грн
2+ 552.57 грн
5+ 522.7 грн
DSEI120-12A DSEI120-12A IXYS dsei120-12a.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 109A; tube; Ifsm: 540A; TO247-2; 357W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 109A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 540A
Case: TO247-2
Max. forward voltage: 1.55V
Power dissipation: 357W
Reverse recovery time: 40ns
Technology: FRED
товар відсутній
DSEI120-12AZ-TUB DSEI120-12AZ-TUB IXYS DSEI120-12AZ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 109A; 40ns; TO268AAHV; Ufmax: 1.55V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 109A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 540A
Case: TO268AAHV
Max. forward voltage: 1.55V
Power dissipation: 357W
Reverse recovery time: 40ns
Technology: FRED
товар відсутній
DSEI20-12A DSEI20-12A IXYS 96501.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 17A; tube; Ifsm: 130A; TO220AC; 78W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 17A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 130A
Case: TO220AC
Max. forward voltage: 1.87V
Heatsink thickness: 0.64...1.39mm
Power dissipation: 78W
Reverse recovery time: 40ns
Technology: FRED
на замовлення 150 шт:
термін постачання 21-30 дні (днів)
2+268.05 грн
3+ 225.44 грн
5+ 179.21 грн
13+ 169.26 грн
Мінімальне замовлення: 2
DSEI25-06A DSEI25-06A IXYS DSEI25-06A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 25A; tube; Ifsm: 240A; TO220AC; 105W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 25A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 240A
Case: TO220AC
Max. forward voltage: 1.31V
Heatsink thickness: 1.14...1.39mm
Power dissipation: 105W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 54 шт:
термін постачання 21-30 дні (днів)
3+137.85 грн
4+ 115.21 грн
10+ 91.74 грн
26+ 86.76 грн
Мінімальне замовлення: 3
DSEI2x161-02P DSEI2x161-02P IXYS media?resourcetype=datasheets&itemid=9f851867-dcfc-451c-a7e2-2d8510ce8b35&filename=littelfuse%2520power%2520semiconductors%2520dsei2x161-02p%2520datasheet.pdf Category: Diode modules
Description: Module: diode; double independent; 200V; If: 165Ax2; ECO-PAC 2
Max. off-state voltage: 200V
Load current: 165A x2
Semiconductor structure: double independent
Max. forward impulse current: 1.2kA
Case: ECO-PAC 2
Max. forward voltage: 1.2V
Electrical mounting: THT
Mechanical mounting: screw
Type of module: diode
товар відсутній
DSEI2X161-12P DSEI2X161-12P IXYS DSEI2X161-12P.pdf Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 128Ax2; ECO-PAC 2
Max. off-state voltage: 1.2kV
Load current: 128A x2
Semiconductor structure: double independent
Max. forward impulse current: 1.2kA
Case: ECO-PAC 2
Max. forward voltage: 1.9V
Electrical mounting: THT
Mechanical mounting: screw
Type of module: diode
товар відсутній
LBB126P LBB126.pdf
LBB126P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; 15Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+650.98 грн
3+ 275.22 грн
9+ 260.28 грн
LBB126PTR LBB126.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 170mA; 15Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
LBB127 LBB127.pdf
LBB127
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; 10Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
LBB127P LBB127.pdf
LBB127P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; 10Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 80 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+681.62 грн
3+ 288.02 грн
8+ 272.37 грн
LBB127PTR LBB127.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; 10Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
LBB127S LBB127.pdf
LBB127S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; 10Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 75 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+681.62 грн
3+ 288.02 грн
8+ 272.37 грн
LBB127STR LBB127.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; 10Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.2A
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
IXFK120N20P IXFH(K)120N20P.pdf
IXFK120N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 120A; 714W; TO264; 100ns
Case: TO264
Mounting: THT
Kind of package: tube
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 714W
Polarisation: unipolar
Gate charge: 152nC
Kind of channel: enhanced
Reverse recovery time: 100ns
Drain-source voltage: 200V
Drain current: 120A
товар відсутній
IXFK120N25P IXFK(X)120N25P.pdf
IXFK120N25P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 120A
Power dissipation: 700W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXFK120N30P3 IXFK(X)120N30P3.pdf
IXFK120N30P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 1.13kW
Case: TO264
On-state resistance: 27mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IXFK120N30T IXFK(X)120N30T.pdf
IXFK120N30T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 265nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1120.45 грн
IXFT180N20X3HV IXF_180N20X3_HV.pdf 200VProductBrief.pdf
IXFT180N20X3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO268
Mounting: SMD
Case: TO268
Kind of package: tube
Power dissipation: 780W
Gate charge: 154nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 180A
Kind of channel: enhanced
Drain-source voltage: 200V
Type of transistor: N-MOSFET
On-state resistance: 7.5mΩ
Gate-source voltage: ±20V
Reverse recovery time: 94ns
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+886.87 грн
3+ 778.72 грн
IXTQ69N30P IXTQ69N30P-DTE.pdf
IXTQ69N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 69A; 500W; TO3P; 330ns
Mounting: THT
Case: TO3P
Power dissipation: 500W
Kind of package: tube
Polarisation: unipolar
Gate charge: 156nC
Technology: Polar™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 330ns
Drain-source voltage: 300V
Drain current: 69A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
товар відсутній
IXTA110N12T2 IXTA(P)110N12T2.pdf
IXTA110N12T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 110A; 517W; TO263; 64ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 110A
Power dissipation: 517W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 64ns
товар відсутній
DMA150YA1600NA DMA150YA1600NA.pdf
DMA150YA1600NA
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 1.6kV; If: 150A
Case: SOT227B
Mechanical mounting: screw
Version: module
Type of bridge rectifier: three-phase half bridge
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.16V
Load current: 150A
Semiconductor structure: common anode
Max. forward impulse current: 800A
Electrical mounting: screw
товар відсутній
DMA150YC1600NA DMA150YC1600NA.pdf
DMA150YC1600NA
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 1.6kV; If: 150A
Case: SOT227B
Mechanical mounting: screw
Version: module
Type of bridge rectifier: three-phase half bridge
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.16V
Load current: 150A
Semiconductor structure: common cathode
Max. forward impulse current: 700A
Electrical mounting: screw
товар відсутній
PLB150 PLB150.pdf
PLB150
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 2.5ms
Kind of output: MOSFET
товар відсутній
PLB150STR PLB150.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 7Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 1ms
Turn-off time: 2.5ms
Kind of output: MOSFET
товар відсутній
PLB171P PLB171.pdf
PLB171P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 82 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+631.07 грн
4+ 266.68 грн
9+ 251.75 грн
PLB171PTR PLB171.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
IXTH1N300P3HV IXTH(T)1N300P3HV.pdf
IXTH1N300P3HV
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO247HV; 1.8us
Case: TO247HV
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 1.8µs
Drain-source voltage: 3kV
Drain current: 1A
On-state resistance: 50Ω
Type of transistor: N-MOSFET
Power dissipation: 195W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
товар відсутній
IXTN22N100L IXTN22N100L.pdf
IXTN22N100L
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 22A; SOT227B; screw; Idm: 50A; 700W
Reverse recovery time: 1µs
Drain-source voltage: 1kV
Drain current: 22A
On-state resistance: 0.6Ω
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 0.27µC
Technology: Linear™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 50A
Case: SOT227B
Semiconductor structure: single transistor
товар відсутній
IXTX22N100L IXTK(X)22N100L.pdf
IXTX22N100L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; PLUS247™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
товар відсутній
MCC310-08io1 MCC310,MCD310.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 320A; Y2; Ufmax: 1.32V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 320A
Case: Y2
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MCC310-12io1 MCC310,MCD310.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 320A; Y2; Ufmax: 1.32V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 320A
Case: Y2
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MCC310-14io1 MCC310,MCD310.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 320A; Y2; Ufmax: 1.32V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 320A
Case: Y2
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MCC310-16io1 MCC310-16IO1.pdf
MCC310-16io1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 320A; Y2-DCB; Ufmax: 1.32V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.32V
Max. forward impulse current: 9.8kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MCC310-18io1 MCC310,MCD310.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 320A; Y2; Ufmax: 1.32V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 320A
Case: Y2
Max. forward voltage: 1.32V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
IXDD604PI IXDD604PI.pdf
IXDD604PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 164 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+95.29 грн
10+ 83.92 грн
11+ 75.38 грн
31+ 71.12 грн
Мінімальне замовлення: 4
IXDD604SI IXDD604PI.pdf
IXDD604SI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 291 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+183.81 грн
5+ 151.48 грн
7+ 136.54 грн
17+ 129.43 грн
100+ 127.3 грн
Мінімальне замовлення: 3
IXDD604SIA IXDD604PI.pdf
IXDD604SIA
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 867 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+111.05 грн
5+ 92.45 грн
11+ 76.8 грн
30+ 72.54 грн
Мінімальне замовлення: 4
IXDD604SITR media?resourcetype=datasheets&itemid=51c553d5-8743-4929-9e5d-d0aaeff05d77&filename=ixd-604
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
товар відсутній
IXDD609CI IXDD609CI.pdf
IXDD609CI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 882 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+199.12 грн
5+ 163.57 грн
6+ 148.63 грн
10+ 147.21 грн
16+ 140.1 грн
50+ 137.25 грн
Мінімальне замовлення: 2
IXDD609SI IXDD609CI.pdf
IXDD609SI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 856 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+163.89 грн
5+ 134.41 грн
7+ 121.61 грн
19+ 115.21 грн
100+ 113.07 грн
Мінімальне замовлення: 3
IXDD609SIA IXDD609CI.pdf
IXDD609SIA
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 540 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+97.26 грн
5+ 80.36 грн
12+ 72.54 грн
32+ 68.98 грн
100+ 66.85 грн
Мінімальне замовлення: 4
IXDD609SITR media?resourcetype=datasheets&itemid=2E0352F3-1549-4FD2-9F7B-077F71DF5397&filename=IXD-609
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
товар відсутній
IXDD609YI IXDD609CI.pdf
IXDD609YI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 888 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+222.1 грн
3+ 184.9 грн
6+ 153.61 грн
15+ 145.08 грн
Мінімальне замовлення: 2
IXDD614CI IXDD614CI-DTE.pdf
IXDD614CI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 885 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+317.83 грн
3+ 260.99 грн
4+ 245.35 грн
10+ 231.84 грн
50+ 222.59 грн
Мінімальне замовлення: 2
IXDD614PI IXDD614CI-DTE.pdf
IXDD614PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 1084 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+162.36 грн
5+ 135.83 грн
8+ 108.81 грн
22+ 102.41 грн
Мінімальне замовлення: 3
IXDD614SI IXDD614CI-DTE.pdf
IXDD614SI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 802 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+248.9 грн
5+ 184.9 грн
13+ 174.94 грн
100+ 170.68 грн
Мінімальне замовлення: 2
IXDD614SITR media?resourcetype=datasheets&itemid=bbefd2e4-4fe5-4ed7-ad75-4663bafc6c83&filename=ixd-614si
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
товар відсутній
IXDD614YI IXDD614CI-DTE.pdf
IXDD614YI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 649 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+353.06 грн
3+ 295.13 грн
4+ 248.19 грн
10+ 234.68 грн
250+ 225.44 грн
Мінімальне замовлення: 2
IXDD630CI IXD_630.pdf
IXDD630CI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
на замовлення 244 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+643.32 грн
2+ 430.25 грн
6+ 406.78 грн
IXDD630MCI IXD_630.pdf
IXDD630MCI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 9...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
товар відсутній
IXDD630YI IXD_630.pdf
IXDD630YI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
товар відсутній
CPC1510GSTR CPC1510.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Mounting: SMT
Operating temperature: -40...85°C
Max. operating current: 0.2A
On-state resistance: 15Ω
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
товар відсутній
CPC1540GSTR CPC1540.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Max. operating current: 120mA
Manufacturer series: OptoMOS
On-state resistance: 25Ω
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Control current max.: 50mA
товар відсутній
CPC1560GSTR CPC1560.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Max. operating current: 300mA
On-state resistance: 5.6Ω
Turn-on time: 0.1ms
Turn-off time: 400µs
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
товар відсутній
CPC1563GSTR CPC1563.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Max. operating current: 120mA
Manufacturer series: OptoMOS
On-state resistance: 35Ω
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 600V AC; max. 600V DC
Control current max.: 50mA
товар відсутній
CPC1593GSTR CPC1593.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.600VAC
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Max. operating current: 120mA
Manufacturer series: OptoMOS
On-state resistance: 35Ω
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 600V AC; max. 600V DC
Control current max.: 50mA
товар відсутній
DSEI12-06A description DSEI12-06A.pdf
DSEI12-06A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 14A; tube; Ifsm: 100A; TO220AC; 62W
Mounting: THT
Kind of package: tube
Power dissipation: 62W
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.39mm
Case: TO220AC
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.5V
Load current: 14A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 100A
на замовлення 195 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+125.16 грн
9+ 100.27 грн
24+ 94.58 грн
Мінімальне замовлення: 3
DSEI12-12A DSEI12-12A.pdf
DSEI12-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 11A; tube; Ifsm: 75A; TO220AC; 78W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 11A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 75A
Case: TO220AC
Max. forward voltage: 2.2V
Heatsink thickness: 1.14...1.39mm
Power dissipation: 78W
Reverse recovery time: 50ns
Technology: FRED
на замовлення 313 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+133.7 грн
8+ 107.38 грн
22+ 100.98 грн
250+ 98.85 грн
Мінімальне замовлення: 3
DSEI12-12AZ-TUB DSEI12-12AZ.pdf
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 11A; 50ns; TO263ABHV; Ufmax: 2.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 11A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 75A
Case: TO263ABHV
Max. forward voltage: 2.2V
Power dissipation: 78W
Reverse recovery time: 50ns
Technology: FRED
товар відсутній
DSEI120-06A DSEI120-06A.pdf
DSEI120-06A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 126A; tube; Ifsm: 540A; TO247-2; 357W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 126A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 540A
Case: TO247-2
Max. forward voltage: 1.12V
Power dissipation: 357W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 236 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+829.43 грн
2+ 552.57 грн
5+ 522.7 грн
DSEI120-12A description dsei120-12a.pdf
DSEI120-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 109A; tube; Ifsm: 540A; TO247-2; 357W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 109A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 540A
Case: TO247-2
Max. forward voltage: 1.55V
Power dissipation: 357W
Reverse recovery time: 40ns
Technology: FRED
товар відсутній
DSEI120-12AZ-TUB DSEI120-12AZ.pdf
DSEI120-12AZ-TUB
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 109A; 40ns; TO268AAHV; Ufmax: 1.55V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 109A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 540A
Case: TO268AAHV
Max. forward voltage: 1.55V
Power dissipation: 357W
Reverse recovery time: 40ns
Technology: FRED
товар відсутній
DSEI20-12A description 96501.pdf
DSEI20-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 17A; tube; Ifsm: 130A; TO220AC; 78W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 17A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 130A
Case: TO220AC
Max. forward voltage: 1.87V
Heatsink thickness: 0.64...1.39mm
Power dissipation: 78W
Reverse recovery time: 40ns
Technology: FRED
на замовлення 150 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+268.05 грн
3+ 225.44 грн
5+ 179.21 грн
13+ 169.26 грн
Мінімальне замовлення: 2
DSEI25-06A DSEI25-06A.pdf
DSEI25-06A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 25A; tube; Ifsm: 240A; TO220AC; 105W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 25A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 240A
Case: TO220AC
Max. forward voltage: 1.31V
Heatsink thickness: 1.14...1.39mm
Power dissipation: 105W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 54 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+137.85 грн
4+ 115.21 грн
10+ 91.74 грн
26+ 86.76 грн
Мінімальне замовлення: 3
DSEI2x161-02P media?resourcetype=datasheets&itemid=9f851867-dcfc-451c-a7e2-2d8510ce8b35&filename=littelfuse%2520power%2520semiconductors%2520dsei2x161-02p%2520datasheet.pdf
DSEI2x161-02P
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 165Ax2; ECO-PAC 2
Max. off-state voltage: 200V
Load current: 165A x2
Semiconductor structure: double independent
Max. forward impulse current: 1.2kA
Case: ECO-PAC 2
Max. forward voltage: 1.2V
Electrical mounting: THT
Mechanical mounting: screw
Type of module: diode
товар відсутній
DSEI2X161-12P DSEI2X161-12P.pdf
DSEI2X161-12P
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 128Ax2; ECO-PAC 2
Max. off-state voltage: 1.2kV
Load current: 128A x2
Semiconductor structure: double independent
Max. forward impulse current: 1.2kA
Case: ECO-PAC 2
Max. forward voltage: 1.9V
Electrical mounting: THT
Mechanical mounting: screw
Type of module: diode
товар відсутній
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