Продукція > IXYS > Всі товари виробника IXYS (18218) > Сторінка 297 з 304

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IXFT18N100Q3 IXFT18N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDFDA4ED557820&compId=IXFH(T)18N100Q3.pdf?ci_sign=82d246ace1e0649cdbbc2d29f3b3702b57bb27a8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO268
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 90nC
On-state resistance: 0.66Ω
Drain current: 18A
Power dissipation: 830W
Drain-source voltage: 1kV
Kind of channel: enhancement
Case: TO268
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IXTA08N100P IXTA08N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389D9641FC3F820&compId=IXTA(P%2CY)08N100P.pdf?ci_sign=401fa2ad4a14adfb35f84e1f4d1d7ff0a0c5450a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO263; 750ns
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 750ns
On-state resistance: 20Ω
Drain current: 0.8A
Power dissipation: 42W
Drain-source voltage: 1kV
Kind of channel: enhancement
Case: TO263
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IXTY08N100P IXTY08N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389D9641FC3F820&compId=IXTA(P%2CY)08N100P.pdf?ci_sign=401fa2ad4a14adfb35f84e1f4d1d7ff0a0c5450a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO252; 750ns
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 750ns
On-state resistance: 20Ω
Drain current: 0.8A
Power dissipation: 42W
Drain-source voltage: 1kV
Kind of channel: enhancement
Case: TO252
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DHG40I4500KO IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 4.5kV; 43A; tube; Ifsm: 600A; ISOPLUS264™
Mounting: THT
Case: ISOPLUS264™
Type of diode: rectifying
Semiconductor structure: single diode
Technology: Sonic FRD™
Kind of package: tube
Max. forward voltage: 3.5V
Load current: 43A
Max. forward impulse current: 0.6kA
Max. off-state voltage: 4.5kV
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VUO160-16NO7 VUO160-16NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA839B255FCB2143&compId=VUO160-16NO7.pdf?ci_sign=f259cb944b4e7fd27ca36b116c05da4f56b80b87 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 175A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 175A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.39V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
1+4851.35 грн
3+4438.97 грн
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IXTA36N30P IXTA36N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF906B09D5DD9E27&compId=IXTA36N30P-DTE.pdf?ci_sign=efd75c498f499d820170bf97b7322d8ea4c63184 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
на замовлення 247 шт:
термін постачання 21-30 дні (днів)
2+351.16 грн
5+222.15 грн
10+202.31 грн
Мінімальне замовлення: 2
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IXTT88N30P IXTT88N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90E84BAF03DE27&compId=IXTH88N30P-DTE.pdf?ci_sign=e30dabb5ca243df6b068c69b7e46217ddc0360dc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: PolarHT™
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
1+936.44 грн
2+738.64 грн
4+698.18 грн
10+671.20 грн
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MMIX1F210N30P3
+1
 		MMIX1F210N30P3 IXYS media?resourcetype=datasheets&itemid=670ef26e-24b2-4f5e-8ee0-56c3d653d777&filename=littelfuse_discrete_mosfets_smpd_packages_mmix1f210n30p3_datasheet.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 108A
Pulsed drain current: 550A
Power dissipation: 520W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 268nC
Kind of channel: enhancement
Reverse recovery time: 250ns
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+2846.90 грн
10+2545.17 грн
20+2542.00 грн
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IX4427NTR IX4427NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D863802577458BF&compId=IX4426-27-28.pdf?ci_sign=99fa057a30fafec2de1c6f12a1a5e55d8b525d9c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -1.5...1.5A
Case: SO8
Mounting: SMD
Number of channels: 2
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Supply voltage: 4.5...35V
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
4+124.74 грн
10+66.80 грн
23+41.41 грн
62+39.19 грн
500+39.03 грн
1000+37.69 грн
Мінімальне замовлення: 4
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MDMA60B800MB IXYS Category: Diode modules
Description: Module: diode; 800V; 60A; ECO-PAC 1; THT; screw
Case: ECO-PAC 1
Type of semiconductor module: diode
Electrical mounting: THT
Mechanical mounting: screw
Load current: 60A
Max. off-state voltage: 0.8kV
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DLA100B800LB-TRR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAEAAAB977D1A60C7&compId=DLA100B800LB.pdf?ci_sign=557d122348beaf5bd30d4f73c9c118239167c2c2 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 124A; Ifsm: 400A
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.44V
Load current: 124A
Max. forward impulse current: 0.4kA
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
Case: SMPD-B
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DLA100B800LB-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAEAAAB977D1A60C7&compId=DLA100B800LB.pdf?ci_sign=557d122348beaf5bd30d4f73c9c118239167c2c2 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 124A; Ifsm: 400A
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.44V
Load current: 124A
Max. forward impulse current: 0.4kA
Max. off-state voltage: 0.8kV
Kind of package: tube
Case: SMPD-B
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DMA120B800LB-TRR IXYS Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; 130A; SMPD-B; SMT; reel,tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 130A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
Case: SMPD-B
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DMA120B800LB-TUB IXYS Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; 130A; SMPD-B; SMT; tube
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 130A
Max. off-state voltage: 0.8kV
Kind of package: tube
Case: SMPD-B
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IXFH70N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh70n65x3-datasheet?assetguid=b5819e4b-925f-4a8e-b528-ff8e8c93904b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 70A; Idm: 110A; 780W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 110A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 165ns
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IXFN170N65X2 IXFN170N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C956F78DF18BF&compId=IXFN170N65X2.pdf?ci_sign=e4ca9b77a78619ba688f7d6c410bc4fd14cd2866 Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 170A; SOT227B; screw; Idm: 340A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 1170W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 13mΩ
Gate charge: 434nC
Kind of channel: enhancement
Reverse recovery time: 270ns
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
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IXFH6N120P IXFH6N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D454445020B820&compId=IXFA(H%2CP)6N120P.pdf?ci_sign=943297d656831e25efec803b2ad2b28ea7b42a34 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO247-3
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 92nC
Drain current: 6A
Drain-source voltage: 1.2kV
Power dissipation: 250W
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
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IXFA6N120P IXFA6N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D454445020B820&compId=IXFA(H%2CP)6N120P.pdf?ci_sign=943297d656831e25efec803b2ad2b28ea7b42a34 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 6A; 250W; TO263
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 92nC
Reverse recovery time: 300ns
On-state resistance: 2.75Ω
Drain current: 6A
Gate-source voltage: ±30V
Drain-source voltage: 1.2kV
Power dissipation: 250W
Case: TO263
Kind of channel: enhancement
Mounting: SMD
Technology: HiPerFET™; Polar™
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IXTT1N250HV IXTT1N250HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F14B3820&compId=IXTT1N250HV.pdf?ci_sign=35d38b5601b2a04ee4448180fd9ae245a739e2e3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 1.5A; Idm: 6A; 250W; TO268HV
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 41nC
Reverse recovery time: 2.5µs
On-state resistance: 40Ω
Drain current: 1.5A
Pulsed drain current: 6A
Gate-source voltage: ±20V
Drain-source voltage: 2.5kV
Power dissipation: 250W
Case: TO268HV
Kind of channel: enhancement
Mounting: SMD
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MUBW50-06A8 IXYS MUBW50-06A8.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Application: motors
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 250W
Max. off-state voltage: 0.6kV
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: E3-Pack
Technology: NPT
Type of semiconductor module: IGBT
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IXDI604SI IXDI604SI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXDI604SIATR IXDI604SIATR IXYS littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXDI604SITR IXYS IXD_604.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXTH24N50L IXTH24N50L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B91825820&compId=IXTH24N50L.pdf?ci_sign=65ce4971a8a2ba17892d822e535deeccc62d7f59 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTA300N04T2 IXTA300N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC479D53541820&compId=IXTA(P)300N04T2.pdf?ci_sign=b651044253ab618ad040cfd9d99a038916dc36fa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO263; 53ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 480W
Case: TO263
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 53ns
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MDA72-08N1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Diode modules
Description: Module: diode; double,common anode; 800V; If: 113Ax2; TO240AA
Case: TO240AA
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.6V
Max. off-state voltage: 0.8kV
Max. forward impulse current: 1.54kA
Load current: 113A x2
Semiconductor structure: common anode; double
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IXGH32N170 IXGH32N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF680363E99820&compId=IXGH(t)32N170.pdf?ci_sign=9963563482ba752aee4d73fdf7543cee510e34e6 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 32A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+1404.65 грн
2+1233.71 грн
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IXGH32N170A IXGH32N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF6B9E68B0F820&compId=IXGH(t)32N170a.pdf?ci_sign=20f3ac78b03e514554c84896e87e65060d55b472 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
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IXGH6N170 IXGH6N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A99DD112ACB8BF&compId=IXG_6N170.pdf?ci_sign=da939209e45ad284a3aacd5ea8533deede4f01af Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 6A; 75W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 6A
Power dissipation: 75W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 0.6µs
Features of semiconductor devices: high voltage
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IXGH16N170 IXGH16N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BAB99F1D44C151BF&compId=IXGH16N170-DTE.pdf?ci_sign=03a18b66e5d35198e9e236f78cf7b52f7cc4d616 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 16A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 1.6µs
Features of semiconductor devices: high voltage
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IXGH16N170A IXGH16N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF1B026578F820&compId=IXGH(t)16N170A_H1.pdf?ci_sign=82251fb9a53624c1a8393f1c64015dacf9520a38 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
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IXGH6N170A IXGH6N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE62EB13C77820&compId=IXGh(T)6N170A.pdf?ci_sign=e3be7b7321a119c55baa6fb6dbef9aed2b2b65e8 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 6A; 75W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 6A
Power dissipation: 75W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 14A
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Turn-on time: 91ns
Turn-off time: 271ns
Features of semiconductor devices: high voltage
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IXGH10N170 IXGH10N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAED5175596B820&compId=IXGH(t)10N170.pdf?ci_sign=3b7d3b6c182f8b0f27b026b278621c2bcff2c55b Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Technology: NPT
Mounting: THT
Kind of package: tube
Gate charge: 32nC
Turn-on time: 0.3µs
Turn-off time: 630ns
Collector current: 10A
Pulsed collector current: 70A
Gate-emitter voltage: ±20V
Power dissipation: 110W
Collector-emitter voltage: 1.7kV
Case: TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
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MKE38P600LB IXYS SMPD%20MOSFET%20and%20IGBTs_Product%20Brief_01.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 600V; 50A; SMPD; double series
Mounting: SMD
Technology: CoolMOS™
Semiconductor structure: double series
Kind of channel: enhancement
Case: SMPD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Gate charge: 0.19µC
Reverse recovery time: 660ns
On-state resistance: 45mΩ
Gate-source voltage: ±20V
Drain current: 50A
Drain-source voltage: 600V
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IXTY1R6N100D2 IXTY1R6N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD988597E13820&compId=IXTA(P%2CY)1R6N100D2.pdf?ci_sign=ce59496fe47080cde7fbbe82a0045017cf12b9be Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Mounting: SMD
Case: TO252
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 11ns
Gate charge: 645nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
2+312.71 грн
5+234.05 грн
6+159.47 грн
17+150.74 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP1R6N100D2 IXTP1R6N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD988597E13820&compId=IXTA(P%2CY)1R6N100D2.pdf?ci_sign=ce59496fe47080cde7fbbe82a0045017cf12b9be Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns
Mounting: THT
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 11ns
Gate charge: 645nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
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В кошику  од. на суму  грн.
IXTA1R6N100D2 IXTA1R6N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD988597E13820&compId=IXTA(P%2CY)1R6N100D2.pdf?ci_sign=ce59496fe47080cde7fbbe82a0045017cf12b9be Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO263; 11ns
Mounting: SMD
Case: TO263
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 11ns
Gate charge: 645nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
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IXTA1R6N100D2HV IXTA1R6N100D2HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A9E51B522E58BF&compId=IXTA1R6N100D2HV.pdf?ci_sign=55d26c1e82b4e332d5c0e06370e2b4aeba32cd94 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 970ns
Gate charge: 27nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Technology: Polar™
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IXTP130N10T IXTP130N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F130D820&compId=IXTA(P)130N10T.pdf?ci_sign=2932da386061339a6cff57dbeaf4458030129d04 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB; 67ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 9.1mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 67ns
Features of semiconductor devices: thrench gate power mosfet
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VUO36-16NO8 VUO36-16NO8 IXYS pVersion=0046&contRep=ZT&docId=E29209FA28E699F19A99005056AB752F&compId=VUO36.pdf?ci_sign=792581ee186cb851d5a743fcb3669bc2c4c9bd6d Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 27A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 27A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: square
Max. forward voltage: 1.05V
Leads: connectors FASTON
Case: FO-B
Leads dimensions: 6.3x0.8mm
на замовлення 82 шт:
термін постачання 21-30 дні (днів)
1+1127.82 грн
2+807.66 грн
4+763.23 грн
20+732.29 грн
В кошику  од. на суму  грн.
VUO36-18NO8 VUO36-18NO8 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8880DD193C42A0C4&compId=VUO36-18NO8.pdf?ci_sign=54b1863c4b23187d629043c5b9c5b16b1507c6e6 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 27A; Ifsm: 550A
Case: FO-B
Electrical mounting: THT
Type of bridge rectifier: three-phase
Leads dimensions: 6.3x0.8mm
Max. forward voltage: 1.05V
Max. forward impulse current: 0.55kA
Load current: 27A
Max. off-state voltage: 1.8kV
Leads: connectors FASTON
Version: square
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
1+1126.97 грн
2+839.40 грн
4+794.18 грн
5+793.38 грн
В кошику  од. на суму  грн.
VUO36-12NO8 VUO36-12NO8 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE987F62DE8F638D8BF&compId=VUO36-12NO8.pdf?ci_sign=1a4b65dca881860903308acd1343447e9caaede6 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 27A; Ifsm: 550A
Case: FO-B
Electrical mounting: THT
Type of bridge rectifier: three-phase
Leads dimensions: 6.3x0.8mm
Max. forward voltage: 1.05V
Max. forward impulse current: 0.55kA
Load current: 27A
Max. off-state voltage: 1.2kV
Leads: connectors FASTON
Version: square
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
1+933.02 грн
2+737.85 грн
4+697.38 грн
10+684.69 грн
В кошику  од. на суму  грн.
VUO36-14NO8 VUO36-14NO8 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8880DB09BB21E0C4&compId=VUO36-14NO8.pdf?ci_sign=9fae9c5a6f6c7a281ef36449ee873963aa3c1041 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.4kV; If: 27A; Ifsm: 550A
Case: FO-B
Electrical mounting: THT
Type of bridge rectifier: three-phase
Leads dimensions: 6.3x0.8mm
Max. forward voltage: 1.05V
Max. forward impulse current: 0.55kA
Load current: 27A
Max. off-state voltage: 1.4kV
Leads: connectors FASTON
Version: square
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
1+991.97 грн
2+771.96 грн
4+729.12 грн
В кошику  од. на суму  грн.
VUB116-16NOXT IXYS VUB116-16NOXT.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 84A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Power dissipation: 390W
Mechanical mounting: screw
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DPG60C400HB DPG60C400HB IXYS Littelfuse-Power-Semiconductors-DPG60C400HB-Datasheet?assetguid=858E0495-7BD0-465A-8A89-2681A2B88183 Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 360A
Case: TO247-3
Max. forward voltage: 1.41V
Power dissipation: 160W
Reverse recovery time: 45ns
Technology: HiPerFRED™ 2nd Gen
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
2+417.81 грн
4+285.62 грн
9+270.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTQ10P50P IXTQ10P50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E986641C6D8BF&compId=IXT_10P50P.pdf?ci_sign=2f1b1156716ce14b61d2f374794ac80d0e99ca0e Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO3P
Case: TO3P
Mounting: THT
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Drain-source voltage: -500V
Drain current: -10A
Gate charge: 50nC
Reverse recovery time: 414ns
On-state resistance: 1Ω
Power dissipation: 300W
Gate-source voltage: ±20V
Kind of package: tube
на замовлення 120 шт:
термін постачання 21-30 дні (днів)
1+564.77 грн
3+333.22 грн
8+314.97 грн
В кошику  од. на суму  грн.
IXTA10P50P IXTA10P50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E986641C6D8BF&compId=IXT_10P50P.pdf?ci_sign=2f1b1156716ce14b61d2f374794ac80d0e99ca0e Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO263
Case: TO263
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Drain-source voltage: -500V
Drain current: -10A
Gate charge: 50nC
Reverse recovery time: 414ns
On-state resistance: 1Ω
Power dissipation: 300W
Gate-source voltage: ±20V
Kind of package: tube
на замовлення 120 шт:
термін постачання 21-30 дні (днів)
2+347.75 грн
4+309.42 грн
9+291.96 грн
50+280.86 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP10P15T IXTP10P15T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA03840D407D8BF&compId=IXT_10P15T.pdf?ci_sign=aab868e73793fd93dd8185240cab19c3a6c680af Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO220AB
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -150V
Drain current: -10A
Gate charge: 36nC
Reverse recovery time: 120ns
On-state resistance: 0.35Ω
Polarisation: unipolar
Gate-source voltage: ±15V
Power dissipation: 83W
Case: TO220AB
Kind of channel: enhancement
Type of transistor: P-MOSFET
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
3+176.01 грн
10+131.70 грн
11+89.65 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1540GS CPC1540GS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D740C7&compId=CPC1540.pdf?ci_sign=5f1209c6b4ad2777cac01c5c99b40e7fe82056f9 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: SMT
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Relay variant: 1-phase; current source
Turn-off time: 2ms
Turn-on time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
Type of relay: solid state
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
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CPC1540GSTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D740C7&compId=CPC1540.pdf?ci_sign=5f1209c6b4ad2777cac01c5c99b40e7fe82056f9 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: SMT
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Relay variant: 1-phase; current source
Turn-off time: 2ms
Turn-on time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
Type of relay: solid state
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
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DPG80C400HB DPG80C400HB IXYS media?resourcetype=datasheets&itemid=61E73F8D-AB2F-4EB2-9820-E7123F4DC84B&filename=Littelfuse-Power-Semiconductors-DPG80C400HB-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 40Ax2; tube; Ifsm: 400A; TO247-3; 215W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 40A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: TO247-3
Max. forward voltage: 1.43V
Power dissipation: 215W
Reverse recovery time: 45ns
Technology: HiPerFRED™ 2nd Gen
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
1+692.07 грн
3+460.96 грн
6+435.57 грн
В кошику  од. на суму  грн.
IXTP1N120P IXTP1N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO220AB; 900ns
Kind of package: tube
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 900ns
On-state resistance: 20Ω
Drain current: 1A
Power dissipation: 63W
Drain-source voltage: 1.2kV
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В кошику  од. на суму  грн.
IXTA1N120P IXTA1N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO263; 900ns
Kind of package: tube
Case: TO263
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 900ns
On-state resistance: 20Ω
Drain current: 1A
Power dissipation: 63W
Drain-source voltage: 1.2kV
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IXTT02N450HV IXTT02N450HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1471820&compId=IXTA(T)02N450HV.pdf?ci_sign=035071321f59a72a8b4bd172f91c4d79fad9fbe1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO268HV; 1.6us
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Drain current: 0.2A
On-state resistance: 625Ω
Power dissipation: 113W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
на замовлення 148 шт:
термін постачання 21-30 дні (днів)
1+1787.43 грн
2+1569.31 грн
10+1509.01 грн
В кошику  од. на суму  грн.
IXTT1N450HV IXTT1N450HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDC022763C7820&compId=IXTH(T)1N450HV.pdf?ci_sign=1a542cb69701b4bb55549a4f2857e06f4cbbbc22 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO268HV; 1.75us
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 46nC
Reverse recovery time: 1.75µs
Drain current: 1A
On-state resistance: 80Ω
Power dissipation: 520W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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IXYH30N450HV IXYH30N450HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB097207154F820&compId=IXYH(t)30N450HV.pdf?ci_sign=ce2d04ecdba3c42f51e93c522cdcffa35e847b64 Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 88nC
Turn-on time: 632ns
Turn-off time: 1545ns
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 430W
Pulsed collector current: 200A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
Technology: XPT™
товару немає в наявності
В кошику  од. на суму  грн.
IXTH02N450HV IXTH02N450HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B91799820&compId=IXTH02N450HV.pdf?ci_sign=95856f459aeb36e578257aa155b9eeb989e13775 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO247HV; 1.6us
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Drain current: 0.2A
On-state resistance: 625Ω
Power dissipation: 113W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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IXYT30N450HV IXYT30N450HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB097207154F820&compId=IXYH(t)30N450HV.pdf?ci_sign=ce2d04ecdba3c42f51e93c522cdcffa35e847b64 Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 88nC
Turn-on time: 632ns
Turn-off time: 1542ns
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 430W
Pulsed collector current: 200A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
Technology: XPT™
товару немає в наявності
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IXYX40N450HV IXYX40N450HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB0A6524A537820&compId=IXYX40N450HV.pdf?ci_sign=373c09a202907f40fc0498452328dc4218a349c0 Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 40A; 660W; TO247HV
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 170nC
Turn-on time: 786ns
Turn-off time: 1128ns
Gate-emitter voltage: ±20V
Collector current: 40A
Power dissipation: 660W
Pulsed collector current: 350A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
Technology: XPT™
товару немає в наявності
В кошику  од. на суму  грн.
IXTX1R4N450HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F14F5820&compId=IXTX1R4N450HV.pdf?ci_sign=6d8938563162ce626547a852b348eda8e18b86c0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 5A; 960W; 660ns
Case: TO247PLUS-HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 88nC
Reverse recovery time: 660ns
Drain current: 1.4A
Pulsed drain current: 5A
Gate-source voltage: ±20V
On-state resistance: 40Ω
Power dissipation: 960W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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IXFT18N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDFDA4ED557820&compId=IXFH(T)18N100Q3.pdf?ci_sign=82d246ace1e0649cdbbc2d29f3b3702b57bb27a8
IXFT18N100Q3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO268
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 90nC
On-state resistance: 0.66Ω
Drain current: 18A
Power dissipation: 830W
Drain-source voltage: 1kV
Kind of channel: enhancement
Case: TO268
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IXTA08N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389D9641FC3F820&compId=IXTA(P%2CY)08N100P.pdf?ci_sign=401fa2ad4a14adfb35f84e1f4d1d7ff0a0c5450a
IXTA08N100P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO263; 750ns
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 750ns
On-state resistance: 20Ω
Drain current: 0.8A
Power dissipation: 42W
Drain-source voltage: 1kV
Kind of channel: enhancement
Case: TO263
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IXTY08N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389D9641FC3F820&compId=IXTA(P%2CY)08N100P.pdf?ci_sign=401fa2ad4a14adfb35f84e1f4d1d7ff0a0c5450a
IXTY08N100P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO252; 750ns
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 750ns
On-state resistance: 20Ω
Drain current: 0.8A
Power dissipation: 42W
Drain-source voltage: 1kV
Kind of channel: enhancement
Case: TO252
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DHG40I4500KO
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 4.5kV; 43A; tube; Ifsm: 600A; ISOPLUS264™
Mounting: THT
Case: ISOPLUS264™
Type of diode: rectifying
Semiconductor structure: single diode
Technology: Sonic FRD™
Kind of package: tube
Max. forward voltage: 3.5V
Load current: 43A
Max. forward impulse current: 0.6kA
Max. off-state voltage: 4.5kV
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VUO160-16NO7 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA839B255FCB2143&compId=VUO160-16NO7.pdf?ci_sign=f259cb944b4e7fd27ca36b116c05da4f56b80b87
VUO160-16NO7
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 175A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 175A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.39V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+4851.35 грн
3+4438.97 грн
В кошику  од. на суму  грн.
IXTA36N30P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF906B09D5DD9E27&compId=IXTA36N30P-DTE.pdf?ci_sign=efd75c498f499d820170bf97b7322d8ea4c63184
IXTA36N30P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
на замовлення 247 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+351.16 грн
5+222.15 грн
10+202.31 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTT88N30P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90E84BAF03DE27&compId=IXTH88N30P-DTE.pdf?ci_sign=e30dabb5ca243df6b068c69b7e46217ddc0360dc
IXTT88N30P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 88A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: PolarHT™
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+936.44 грн
2+738.64 грн
4+698.18 грн
10+671.20 грн
В кошику  од. на суму  грн.
MMIX1F210N30P3 media?resourcetype=datasheets&itemid=670ef26e-24b2-4f5e-8ee0-56c3d653d777&filename=littelfuse_discrete_mosfets_smpd_packages_mmix1f210n30p3_datasheet.pdf
MMIX1F210N30P3
+1
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 108A
Pulsed drain current: 550A
Power dissipation: 520W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 268nC
Kind of channel: enhancement
Reverse recovery time: 250ns
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2846.90 грн
10+2545.17 грн
20+2542.00 грн
В кошику  од. на суму  грн.
IX4427NTR pVersion=0046&contRep=ZT&docId=005056AB82531EE98D863802577458BF&compId=IX4426-27-28.pdf?ci_sign=99fa057a30fafec2de1c6f12a1a5e55d8b525d9c
IX4427NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -1.5...1.5A
Case: SO8
Mounting: SMD
Number of channels: 2
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Supply voltage: 4.5...35V
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+124.74 грн
10+66.80 грн
23+41.41 грн
62+39.19 грн
500+39.03 грн
1000+37.69 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
MDMA60B800MB
Виробник: IXYS
Category: Diode modules
Description: Module: diode; 800V; 60A; ECO-PAC 1; THT; screw
Case: ECO-PAC 1
Type of semiconductor module: diode
Electrical mounting: THT
Mechanical mounting: screw
Load current: 60A
Max. off-state voltage: 0.8kV
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DLA100B800LB-TRR pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAEAAAB977D1A60C7&compId=DLA100B800LB.pdf?ci_sign=557d122348beaf5bd30d4f73c9c118239167c2c2
Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 124A; Ifsm: 400A
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.44V
Load current: 124A
Max. forward impulse current: 0.4kA
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
Case: SMPD-B
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DLA100B800LB-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAEAAAB977D1A60C7&compId=DLA100B800LB.pdf?ci_sign=557d122348beaf5bd30d4f73c9c118239167c2c2
Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 124A; Ifsm: 400A
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.44V
Load current: 124A
Max. forward impulse current: 0.4kA
Max. off-state voltage: 0.8kV
Kind of package: tube
Case: SMPD-B
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DMA120B800LB-TRR
Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; 130A; SMPD-B; SMT; reel,tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 130A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
Case: SMPD-B
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DMA120B800LB-TUB
Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; 130A; SMPD-B; SMT; tube
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 130A
Max. off-state voltage: 0.8kV
Kind of package: tube
Case: SMPD-B
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IXFH70N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh70n65x3-datasheet?assetguid=b5819e4b-925f-4a8e-b528-ff8e8c93904b
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 70A; Idm: 110A; 780W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 110A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 165ns
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IXFN170N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C956F78DF18BF&compId=IXFN170N65X2.pdf?ci_sign=e4ca9b77a78619ba688f7d6c410bc4fd14cd2866
IXFN170N65X2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 170A; SOT227B; screw; Idm: 340A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 1170W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 13mΩ
Gate charge: 434nC
Kind of channel: enhancement
Reverse recovery time: 270ns
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
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IXFH6N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D454445020B820&compId=IXFA(H%2CP)6N120P.pdf?ci_sign=943297d656831e25efec803b2ad2b28ea7b42a34
IXFH6N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO247-3
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 92nC
Drain current: 6A
Drain-source voltage: 1.2kV
Power dissipation: 250W
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
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IXFA6N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D454445020B820&compId=IXFA(H%2CP)6N120P.pdf?ci_sign=943297d656831e25efec803b2ad2b28ea7b42a34
IXFA6N120P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 6A; 250W; TO263
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 92nC
Reverse recovery time: 300ns
On-state resistance: 2.75Ω
Drain current: 6A
Gate-source voltage: ±30V
Drain-source voltage: 1.2kV
Power dissipation: 250W
Case: TO263
Kind of channel: enhancement
Mounting: SMD
Technology: HiPerFET™; Polar™
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IXTT1N250HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F14B3820&compId=IXTT1N250HV.pdf?ci_sign=35d38b5601b2a04ee4448180fd9ae245a739e2e3
IXTT1N250HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 1.5A; Idm: 6A; 250W; TO268HV
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 41nC
Reverse recovery time: 2.5µs
On-state resistance: 40Ω
Drain current: 1.5A
Pulsed drain current: 6A
Gate-source voltage: ±20V
Drain-source voltage: 2.5kV
Power dissipation: 250W
Case: TO268HV
Kind of channel: enhancement
Mounting: SMD
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MUBW50-06A8 MUBW50-06A8.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Application: motors
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 250W
Max. off-state voltage: 0.6kV
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: E3-Pack
Technology: NPT
Type of semiconductor module: IGBT
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IXDI604SI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDI604SI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXDI604SIATR littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200
IXDI604SIATR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXDI604SITR IXD_604.pdf
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXTH24N50L pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B91825820&compId=IXTH24N50L.pdf?ci_sign=65ce4971a8a2ba17892d822e535deeccc62d7f59
IXTH24N50L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTA300N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC479D53541820&compId=IXTA(P)300N04T2.pdf?ci_sign=b651044253ab618ad040cfd9d99a038916dc36fa
IXTA300N04T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO263; 53ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 480W
Case: TO263
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 53ns
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MDA72-08N1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common anode; 800V; If: 113Ax2; TO240AA
Case: TO240AA
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.6V
Max. off-state voltage: 0.8kV
Max. forward impulse current: 1.54kA
Load current: 113A x2
Semiconductor structure: common anode; double
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IXGH32N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF680363E99820&compId=IXGH(t)32N170.pdf?ci_sign=9963563482ba752aee4d73fdf7543cee510e34e6
IXGH32N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 32A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 32A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 920ns
Features of semiconductor devices: high voltage
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1404.65 грн
2+1233.71 грн
В кошику  од. на суму  грн.
IXGH32N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF6B9E68B0F820&compId=IXGH(t)32N170a.pdf?ci_sign=20f3ac78b03e514554c84896e87e65060d55b472
IXGH32N170A
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 21A; 350W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 21A
Power dissipation: 350W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 370ns
Features of semiconductor devices: high voltage
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IXGH6N170 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A99DD112ACB8BF&compId=IXG_6N170.pdf?ci_sign=da939209e45ad284a3aacd5ea8533deede4f01af
IXGH6N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 6A; 75W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 6A
Power dissipation: 75W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 0.6µs
Features of semiconductor devices: high voltage
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IXGH16N170 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BAB99F1D44C151BF&compId=IXGH16N170-DTE.pdf?ci_sign=03a18b66e5d35198e9e236f78cf7b52f7cc4d616
IXGH16N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 16A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 1.6µs
Features of semiconductor devices: high voltage
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В кошику  од. на суму  грн.
IXGH16N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF1B026578F820&compId=IXGH(t)16N170A_H1.pdf?ci_sign=82251fb9a53624c1a8393f1c64015dacf9520a38
IXGH16N170A
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
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В кошику  од. на суму  грн.
IXGH6N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE62EB13C77820&compId=IXGh(T)6N170A.pdf?ci_sign=e3be7b7321a119c55baa6fb6dbef9aed2b2b65e8
IXGH6N170A
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 6A; 75W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 6A
Power dissipation: 75W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 14A
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Turn-on time: 91ns
Turn-off time: 271ns
Features of semiconductor devices: high voltage
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В кошику  од. на суму  грн.
IXGH10N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAED5175596B820&compId=IXGH(t)10N170.pdf?ci_sign=3b7d3b6c182f8b0f27b026b278621c2bcff2c55b
IXGH10N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 10A; 110W; TO247-3
Technology: NPT
Mounting: THT
Kind of package: tube
Gate charge: 32nC
Turn-on time: 0.3µs
Turn-off time: 630ns
Collector current: 10A
Pulsed collector current: 70A
Gate-emitter voltage: ±20V
Power dissipation: 110W
Collector-emitter voltage: 1.7kV
Case: TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
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MKE38P600LB SMPD%20MOSFET%20and%20IGBTs_Product%20Brief_01.pdf
Виробник: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 600V; 50A; SMPD; double series
Mounting: SMD
Technology: CoolMOS™
Semiconductor structure: double series
Kind of channel: enhancement
Case: SMPD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Gate charge: 0.19µC
Reverse recovery time: 660ns
On-state resistance: 45mΩ
Gate-source voltage: ±20V
Drain current: 50A
Drain-source voltage: 600V
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IXTY1R6N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD988597E13820&compId=IXTA(P%2CY)1R6N100D2.pdf?ci_sign=ce59496fe47080cde7fbbe82a0045017cf12b9be
IXTY1R6N100D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Mounting: SMD
Case: TO252
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 11ns
Gate charge: 645nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+312.71 грн
5+234.05 грн
6+159.47 грн
17+150.74 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP1R6N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD988597E13820&compId=IXTA(P%2CY)1R6N100D2.pdf?ci_sign=ce59496fe47080cde7fbbe82a0045017cf12b9be
IXTP1R6N100D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns
Mounting: THT
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 11ns
Gate charge: 645nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
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IXTA1R6N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD988597E13820&compId=IXTA(P%2CY)1R6N100D2.pdf?ci_sign=ce59496fe47080cde7fbbe82a0045017cf12b9be
IXTA1R6N100D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO263; 11ns
Mounting: SMD
Case: TO263
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 11ns
Gate charge: 645nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
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IXTA1R6N100D2HV pVersion=0046&contRep=ZT&docId=005056AB82531EE995A9E51B522E58BF&compId=IXTA1R6N100D2HV.pdf?ci_sign=55d26c1e82b4e332d5c0e06370e2b4aeba32cd94
IXTA1R6N100D2HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 970ns
Gate charge: 27nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Technology: Polar™
товару немає в наявності
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IXTP130N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F130D820&compId=IXTA(P)130N10T.pdf?ci_sign=2932da386061339a6cff57dbeaf4458030129d04
IXTP130N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB; 67ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 9.1mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 67ns
Features of semiconductor devices: thrench gate power mosfet
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VUO36-16NO8 pVersion=0046&contRep=ZT&docId=E29209FA28E699F19A99005056AB752F&compId=VUO36.pdf?ci_sign=792581ee186cb851d5a743fcb3669bc2c4c9bd6d
VUO36-16NO8
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 27A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 27A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: square
Max. forward voltage: 1.05V
Leads: connectors FASTON
Case: FO-B
Leads dimensions: 6.3x0.8mm
на замовлення 82 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1127.82 грн
2+807.66 грн
4+763.23 грн
20+732.29 грн
В кошику  од. на суму  грн.
VUO36-18NO8 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8880DD193C42A0C4&compId=VUO36-18NO8.pdf?ci_sign=54b1863c4b23187d629043c5b9c5b16b1507c6e6
VUO36-18NO8
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 27A; Ifsm: 550A
Case: FO-B
Electrical mounting: THT
Type of bridge rectifier: three-phase
Leads dimensions: 6.3x0.8mm
Max. forward voltage: 1.05V
Max. forward impulse current: 0.55kA
Load current: 27A
Max. off-state voltage: 1.8kV
Leads: connectors FASTON
Version: square
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1126.97 грн
2+839.40 грн
4+794.18 грн
5+793.38 грн
В кошику  од. на суму  грн.
VUO36-12NO8 pVersion=0046&contRep=ZT&docId=005056AB82531EE987F62DE8F638D8BF&compId=VUO36-12NO8.pdf?ci_sign=1a4b65dca881860903308acd1343447e9caaede6
VUO36-12NO8
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 27A; Ifsm: 550A
Case: FO-B
Electrical mounting: THT
Type of bridge rectifier: three-phase
Leads dimensions: 6.3x0.8mm
Max. forward voltage: 1.05V
Max. forward impulse current: 0.55kA
Load current: 27A
Max. off-state voltage: 1.2kV
Leads: connectors FASTON
Version: square
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+933.02 грн
2+737.85 грн
4+697.38 грн
10+684.69 грн
В кошику  од. на суму  грн.
VUO36-14NO8 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8880DB09BB21E0C4&compId=VUO36-14NO8.pdf?ci_sign=9fae9c5a6f6c7a281ef36449ee873963aa3c1041
VUO36-14NO8
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.4kV; If: 27A; Ifsm: 550A
Case: FO-B
Electrical mounting: THT
Type of bridge rectifier: three-phase
Leads dimensions: 6.3x0.8mm
Max. forward voltage: 1.05V
Max. forward impulse current: 0.55kA
Load current: 27A
Max. off-state voltage: 1.4kV
Leads: connectors FASTON
Version: square
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+991.97 грн
2+771.96 грн
4+729.12 грн
В кошику  од. на суму  грн.
VUB116-16NOXT VUB116-16NOXT.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 84A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Power dissipation: 390W
Mechanical mounting: screw
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DPG60C400HB Littelfuse-Power-Semiconductors-DPG60C400HB-Datasheet?assetguid=858E0495-7BD0-465A-8A89-2681A2B88183
DPG60C400HB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 30Ax2; tube; Ifsm: 360A; TO247-3; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 360A
Case: TO247-3
Max. forward voltage: 1.41V
Power dissipation: 160W
Reverse recovery time: 45ns
Technology: HiPerFRED™ 2nd Gen
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+417.81 грн
4+285.62 грн
9+270.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTQ10P50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E986641C6D8BF&compId=IXT_10P50P.pdf?ci_sign=2f1b1156716ce14b61d2f374794ac80d0e99ca0e
IXTQ10P50P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO3P
Case: TO3P
Mounting: THT
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Drain-source voltage: -500V
Drain current: -10A
Gate charge: 50nC
Reverse recovery time: 414ns
On-state resistance: 1Ω
Power dissipation: 300W
Gate-source voltage: ±20V
Kind of package: tube
на замовлення 120 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+564.77 грн
3+333.22 грн
8+314.97 грн
В кошику  од. на суму  грн.
IXTA10P50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E986641C6D8BF&compId=IXT_10P50P.pdf?ci_sign=2f1b1156716ce14b61d2f374794ac80d0e99ca0e
IXTA10P50P
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO263
Case: TO263
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Drain-source voltage: -500V
Drain current: -10A
Gate charge: 50nC
Reverse recovery time: 414ns
On-state resistance: 1Ω
Power dissipation: 300W
Gate-source voltage: ±20V
Kind of package: tube
на замовлення 120 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+347.75 грн
4+309.42 грн
9+291.96 грн
50+280.86 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP10P15T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA03840D407D8BF&compId=IXT_10P15T.pdf?ci_sign=aab868e73793fd93dd8185240cab19c3a6c680af
IXTP10P15T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO220AB
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -150V
Drain current: -10A
Gate charge: 36nC
Reverse recovery time: 120ns
On-state resistance: 0.35Ω
Polarisation: unipolar
Gate-source voltage: ±15V
Power dissipation: 83W
Case: TO220AB
Kind of channel: enhancement
Type of transistor: P-MOSFET
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+176.01 грн
10+131.70 грн
11+89.65 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1540GS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D740C7&compId=CPC1540.pdf?ci_sign=5f1209c6b4ad2777cac01c5c99b40e7fe82056f9
CPC1540GS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: SMT
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Relay variant: 1-phase; current source
Turn-off time: 2ms
Turn-on time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
Type of relay: solid state
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
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CPC1540GSTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D740C7&compId=CPC1540.pdf?ci_sign=5f1209c6b4ad2777cac01c5c99b40e7fe82056f9
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: SMT
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Relay variant: 1-phase; current source
Turn-off time: 2ms
Turn-on time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
Type of relay: solid state
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
товару немає в наявності
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DPG80C400HB media?resourcetype=datasheets&itemid=61E73F8D-AB2F-4EB2-9820-E7123F4DC84B&filename=Littelfuse-Power-Semiconductors-DPG80C400HB-Datasheet
DPG80C400HB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 40Ax2; tube; Ifsm: 400A; TO247-3; 215W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 40A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: TO247-3
Max. forward voltage: 1.43V
Power dissipation: 215W
Reverse recovery time: 45ns
Technology: HiPerFRED™ 2nd Gen
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+692.07 грн
3+460.96 грн
6+435.57 грн
В кошику  од. на суму  грн.
IXTP1N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0
IXTP1N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO220AB; 900ns
Kind of package: tube
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 900ns
On-state resistance: 20Ω
Drain current: 1A
Power dissipation: 63W
Drain-source voltage: 1.2kV
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IXTA1N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0
IXTA1N120P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO263; 900ns
Kind of package: tube
Case: TO263
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 900ns
On-state resistance: 20Ω
Drain current: 1A
Power dissipation: 63W
Drain-source voltage: 1.2kV
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IXTT02N450HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1471820&compId=IXTA(T)02N450HV.pdf?ci_sign=035071321f59a72a8b4bd172f91c4d79fad9fbe1
IXTT02N450HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO268HV; 1.6us
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Drain current: 0.2A
On-state resistance: 625Ω
Power dissipation: 113W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
на замовлення 148 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1787.43 грн
2+1569.31 грн
10+1509.01 грн
В кошику  од. на суму  грн.
IXTT1N450HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDC022763C7820&compId=IXTH(T)1N450HV.pdf?ci_sign=1a542cb69701b4bb55549a4f2857e06f4cbbbc22
IXTT1N450HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO268HV; 1.75us
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 46nC
Reverse recovery time: 1.75µs
Drain current: 1A
On-state resistance: 80Ω
Power dissipation: 520W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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IXYH30N450HV pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB097207154F820&compId=IXYH(t)30N450HV.pdf?ci_sign=ce2d04ecdba3c42f51e93c522cdcffa35e847b64
IXYH30N450HV
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 88nC
Turn-on time: 632ns
Turn-off time: 1545ns
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 430W
Pulsed collector current: 200A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
Technology: XPT™
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IXTH02N450HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B91799820&compId=IXTH02N450HV.pdf?ci_sign=95856f459aeb36e578257aa155b9eeb989e13775
IXTH02N450HV
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO247HV; 1.6us
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Drain current: 0.2A
On-state resistance: 625Ω
Power dissipation: 113W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
товару немає в наявності
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IXYT30N450HV pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB097207154F820&compId=IXYH(t)30N450HV.pdf?ci_sign=ce2d04ecdba3c42f51e93c522cdcffa35e847b64
IXYT30N450HV
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 88nC
Turn-on time: 632ns
Turn-off time: 1542ns
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 430W
Pulsed collector current: 200A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
Technology: XPT™
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IXYX40N450HV pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB0A6524A537820&compId=IXYX40N450HV.pdf?ci_sign=373c09a202907f40fc0498452328dc4218a349c0
IXYX40N450HV
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 40A; 660W; TO247HV
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 170nC
Turn-on time: 786ns
Turn-off time: 1128ns
Gate-emitter voltage: ±20V
Collector current: 40A
Power dissipation: 660W
Pulsed collector current: 350A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
Technology: XPT™
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IXTX1R4N450HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F14F5820&compId=IXTX1R4N450HV.pdf?ci_sign=6d8938563162ce626547a852b348eda8e18b86c0
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 5A; 960W; 660ns
Case: TO247PLUS-HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 88nC
Reverse recovery time: 660ns
Drain current: 1.4A
Pulsed drain current: 5A
Gate-source voltage: ±20V
On-state resistance: 40Ω
Power dissipation: 960W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
товару немає в наявності
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