| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| LCA110STR | IXYS |
 Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms |
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IXTA4N80P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W Type of transistor: N-MOSFET Technology: PolarHV™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.6A Pulsed drain current: 8A Power dissipation: 100W Case: TO263 Gate-source voltage: ±30V On-state resistance: 3.4Ω Mounting: SMD Gate charge: 14.2nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 560ns |
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IXTP4N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W Type of transistor: N-MOSFET Technology: PolarHV™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.6A Pulsed drain current: 8A Power dissipation: 100W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 3.4Ω Mounting: THT Gate charge: 14.2nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 560ns |
на замовлення 258 шт: термін постачання 21-30 дні (днів) |
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| IXGH4N250C | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 2.5kV; 13A; 150W; TO247-3; Features: high voltage Mounting: THT Power dissipation: 150W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 57nC Case: TO247-3 Collector-emitter voltage: 2.5kV Gate-emitter voltage: ±20V Collector current: 13A Pulsed collector current: 8A Turn-off time: 350ns Type of transistor: IGBT |
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IXBK64N250 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 64A; 735W; TO264 Mounting: THT Power dissipation: 735W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 400nC Technology: BiMOSFET™; FRED Case: TO264 Collector-emitter voltage: 2.5kV Gate-emitter voltage: ±25V Collector current: 64A Pulsed collector current: 600A Turn-on time: 632ns Turn-off time: 397ns Type of transistor: IGBT |
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| IXFA44N25X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 44A; Idm: 66A; 240W Mounting: SMD Power dissipation: 240W Polarisation: unipolar Kind of package: tube Gate charge: 33nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 66A Case: TO263 Reverse recovery time: 87ns Drain-source voltage: 250V Drain current: 44A On-state resistance: 40mΩ Type of transistor: N-MOSFET |
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IXTN17N120L | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A Technology: Linear™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 15A Pulsed drain current: 34A Power dissipation: 540W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.9Ω Gate charge: 155nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 1.83µs Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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| IXBOD2-04 | IXYS |
Category: Thyristors - others Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 400V Type of thyristor: BOD Max. load current: 0.9A Case: FP-Case Mounting: THT Kind of package: bulk Technology: 2nd Gen Breakover voltage: 400V |
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CPC1020N | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 1.2A Switched voltage: max. 30V AC; max. 30V DC Relay variant: current source On-state resistance: 0.25Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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CPC1020NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 1.2A Switched voltage: max. 30V AC; max. 30V DC Relay variant: current source On-state resistance: 0.25Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Manufacturer series: OptoMOS Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET |
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CLA50E1200HB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT; tube Kind of package: tube Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 50mA Max. forward impulse current: 0.65kA Type of thyristor: thyristor Mounting: THT Case: TO247AD |
на замовлення 226 шт: термін постачання 21-30 дні (днів) |
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CLA50E1200TC-TUB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 50/80mA Case: D3PAK Mounting: SMD Kind of package: tube Max. forward impulse current: 555A |
на замовлення 120 шт: термін постачання 21-30 дні (днів) |
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| CLA50E1200TC-TRL | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 50/80mA Case: D3PAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 555A |
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MDD26-12N1B | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.2kV; If: 36A; TO240AA; Ufmax: 1.05V Case: TO240AA Max. off-state voltage: 1.2kV Max. load current: 60A Max. forward voltage: 1.05V Load current: 36A Semiconductor structure: double series Max. forward impulse current: 555A Electrical mounting: screw Mechanical mounting: screw Type of module: diode |
на замовлення 37 шт: термін постачання 21-30 дні (днів) |
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MCC44-16io1B | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 49A; TO240AA; Ufmax: 1.34V Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk Type of module: thyristor Case: TO240AA Max. off-state voltage: 1.6kV Max. forward voltage: 1.34V Load current: 49A Semiconductor structure: double series Gate current: 100/200mA Max. forward impulse current: 1.15kA |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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MCD162-16io1 | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 181A Case: Y4-M6 Max. forward voltage: 1.03V Max. forward impulse current: 6kA Gate current: 150/200mA Electrical mounting: FASTON connectors; screw Max. load current: 300A Threshold on-voltage: 0.88V Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
на замовлення 12 шт: термін постачання 21-30 дні (днів) |
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CPC1001N | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4 Mounting: SMD Case: SOP4 Insulation voltage: 1.5kV Turn-on time: 1µs Turn-off time: 30µs Kind of output: transistor CTR@If: 100-800%@0.2mA Number of channels: 1 Type of optocoupler: optocoupler |
на замовлення 832 шт: термін постачання 21-30 дні (днів) |
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CPC1001NTR | IXYS |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4; -40÷85°C Control current max.: 5mA Max. operating current: 0.1A Switched voltage: max. 30V DC Mounting: SMD Case: SOP4 Operating temperature: -40...85°C Insulation voltage: 1.5kV Turn-on time: 1µs Turn-off time: 30µs Kind of output: transistor CTR@If: 100-800%@0.2mA Number of channels: 1 Type of optocoupler: optocoupler |
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CPC1002N | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; 4.09x3.81x2.03mm Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 700mA Switched voltage: max. 60V DC Relay variant: current source On-state resistance: 0.55Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 2ms Kind of output: MOSFET |
на замовлення 1068 шт: термін постачання 21-30 дні (днів) |
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CPC1002NTR | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; 4.09x3.81x2.03mm Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 700mA Switched voltage: max. 60V DC Relay variant: current source On-state resistance: 0.55Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 2ms Kind of output: MOSFET |
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CPC1006N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 75mA Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source On-state resistance: 10Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Manufacturer series: OptoMOS Turn-on time: 10ms Turn-off time: 10ms Kind of output: MOSFET |
на замовлення 3479 шт: термін постачання 21-30 дні (днів) |
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CPC1006NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 75mA Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source On-state resistance: 10Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Manufacturer series: OptoMOS Turn-on time: 10ms Turn-off time: 10ms Kind of output: MOSFET |
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CPC1009N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 100V AC; max. 100V DC Relay variant: 1-phase; current source On-state resistance: 8Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Manufacturer series: OptoMOS Turn-on time: 2ms Turn-off time: 0.5ms Kind of output: MOSFET |
на замовлення 438 шт: термін постачання 21-30 дні (днів) |
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CPC1009NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 100V AC; max. 100V DC Relay variant: 1-phase; current source On-state resistance: 8Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Manufacturer series: OptoMOS Turn-on time: 2ms Turn-off time: 0.5ms Kind of output: MOSFET |
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IXKH47N60C | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 290W Case: TO247-3 On-state resistance: 70mΩ Mounting: THT Gate charge: 250nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: super junction coolmos |
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IXKR47N60C5 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 278W Case: ISOPLUS247™ On-state resistance: 45mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: super junction coolmos |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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| DSS10-01AS-TUB | IXYS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 10A; D2PAK; tube; 90W Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 10A Max. load current: 35A Semiconductor structure: single diode Max. forward voltage: 0.66V Case: D2PAK Kind of package: tube Max. forward impulse current: 120A Power dissipation: 90W |
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DSSK16-01AS | IXYS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 8Ax2; D2PAK; reel,tape; 90W Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.65V Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 120A Power dissipation: 90W |
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DSS10-01A | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10A; 90W; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A Max. load current: 35A Semiconductor structure: single diode Max. forward voltage: 0.66V Case: TO220AC Kind of package: tube Max. forward impulse current: 120A Power dissipation: 90W |
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DSS20-01AC | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 20A; 90W; ISOPLUS220™; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 20A Semiconductor structure: single diode Max. forward voltage: 0.65V Case: ISOPLUS220™ Kind of package: tube Max. forward impulse current: 120A Power dissipation: 90W |
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DSSK16-01A | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 8Ax2; 90W; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.65V Case: TO220AB Kind of package: tube Max. forward impulse current: 120A Power dissipation: 90W Heatsink thickness: 1.14...1.39mm |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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DSSK30-01A | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; 105W; TO247-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.64V Case: TO247-3 Kind of package: tube Max. forward impulse current: 230A Power dissipation: 105W |
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DSSK50-01A | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; 135W; TO247-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 25A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.65V Case: TO247-3 Kind of package: tube Max. forward impulse current: 0.45kA Power dissipation: 135W |
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DSSS30-01AR | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; 190W; ISOPLUS247™ Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 30A x2 Semiconductor structure: double series Max. forward voltage: 0.63V Case: ISOPLUS247™ Kind of package: tube Max. forward impulse current: 600A Power dissipation: 190W |
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| MIXA80R1200VA | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 390W Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 84A Case: V1-A-Pack Application: fans; for pump; motors; photovoltaics Electrical mounting: FASTON connectors Gate-emitter voltage: ±20V Pulsed collector current: 225A Power dissipation: 390W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw |
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| MIXA150Q1200VA | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 695W Type of module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper Max. off-state voltage: 1.2kV Collector current: 175A Case: V1-A-Pack Electrical mounting: FASTON connectors Gate-emitter voltage: ±20V Pulsed collector current: 450A Power dissipation: 695W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw |
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| MIXA150R1200VA | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 695W Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 175A Case: V1-A-Pack Application: fans; for pump; motors; photovoltaics Electrical mounting: FASTON connectors Gate-emitter voltage: ±20V Pulsed collector current: 450A Power dissipation: 695W Technology: Sonic FRD™; XPT™ Mechanical mounting: screw |
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IXA60IF1200NA | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 56A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 56A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 290W Technology: XPT™ Features of semiconductor devices: high voltage Mechanical mounting: screw |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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IXA70I1200NA | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 65A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 350W Technology: XPT™ Features of semiconductor devices: high voltage Mechanical mounting: screw |
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IXDN55N120D1 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 62A; SOT227B Technology: NPT Collector current: 62A Power dissipation: 450W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 124A Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Features of semiconductor devices: high voltage Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
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IXDN75N120 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 150A; SOT227B Technology: NPT Collector current: 150A Power dissipation: 660W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 190A Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
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| IXG70IF1200NA | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 86A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 86A Case: SOT227B Electrical mounting: screw Technology: X2PT Features of semiconductor devices: integrated anti-parallel diode Mechanical mounting: screw |
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IXGN50N120C3H1 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B Technology: GenX3™; PT Collector current: 50A Power dissipation: 460W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 240A Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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IXBH42N170 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3 Type of transistor: IGBT Technology: BiMOSFET™; FRED Collector-emitter voltage: 1.7kV Collector current: 42A Power dissipation: 360W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 188nC Kind of package: tube Turn-on time: 224ns Turn-off time: 1.07µs Features of semiconductor devices: high voltage |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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IXTA70N075T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 70A; 150W; TO263; 48ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 70A Power dissipation: 150W Case: TO263 On-state resistance: 12mΩ Mounting: SMD Gate charge: 46nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 48ns |
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| IXKC19N60C5 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Case: ISOPLUS220™ Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 430ns |
товар відсутній |
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| MMIX1G320N60B3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD Type of transistor: IGBT Technology: BiMOSFET™; GenX3™; PT Collector-emitter voltage: 600V Collector current: 180A Power dissipation: 1kW Case: SMPD Gate-emitter voltage: ±20V Pulsed collector current: 1kA Mounting: SMD Gate charge: 585nC Kind of package: tube Turn-on time: 107ns Turn-off time: 595ns |
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IXDN602D2TR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V Mounting: SMD Case: DFN8 Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Kind of integrated circuit: gate driver; low-side Supply voltage: 4.5...35V Turn-on time: 93ns Turn-off time: 93ns Output current: -2...2A Type of integrated circuit: driver Number of channels: 2 |
на замовлення 1998 шт: термін постачання 21-30 дні (днів) |
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IXDN602PI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns |
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IXDN602SI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns |
товар відсутній |
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IXDN602SIA | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns |
на замовлення 222 шт: термін постачання 21-30 дні (днів) |
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IXDN602SIATR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns |
товар відсутній |
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| IXDN602SITR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns |
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IXGA20N120A3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263 Mounting: SMD Case: TO263 Kind of package: tube Power dissipation: 180W Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 120A Turn-on time: 66ns Turn-off time: 1.53µs Type of transistor: IGBT Gate charge: 50nC |
товар відсутній |
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IXGA20N120B3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263 Mounting: SMD Case: TO263 Kind of package: tube Power dissipation: 180W Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 80A Turn-on time: 61ns Turn-off time: 720ns Type of transistor: IGBT Gate charge: 51nC |
товар відсутній |
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IXDH30N120D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 38A; 300W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.2kV Collector current: 38A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 76A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 170ns Turn-off time: 570ns |
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IXFB30N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Power dissipation: 1.25kW Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Gate charge: 310nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns |
товар відсутній |
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IXFN30N120P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Pulsed drain current: 75A Power dissipation: 890W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.35Ω Gate charge: 310nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 300ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |
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IXGA30N120B3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 300W Case: TO263 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: SMD Gate charge: 87nC Kind of package: tube Turn-on time: 56ns Turn-off time: 471ns |
товар відсутній |
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IXGH30N120B3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 87nC Kind of package: tube Turn-on time: 56ns Turn-off time: 471ns |
товар відсутній |
| LCA110STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
товар відсутній
| IXTA4N80P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 560ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 560ns
товар відсутній
| IXTP4N80P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 560ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 8A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 14.2nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 560ns
на замовлення 258 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 133.72 грн |
| 4+ | 110.3 грн |
| 10+ | 88.1 грн |
| 26+ | 83.24 грн |
| IXGH4N250C |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 13A; 150W; TO247-3; Features: high voltage
Mounting: THT
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 57nC
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 8A
Turn-off time: 350ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 13A; 150W; TO247-3; Features: high voltage
Mounting: THT
Power dissipation: 150W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 57nC
Case: TO247-3
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 13A
Pulsed collector current: 8A
Turn-off time: 350ns
Type of transistor: IGBT
товар відсутній
| IXBK64N250 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 64A; 735W; TO264
Mounting: THT
Power dissipation: 735W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 400nC
Technology: BiMOSFET™; FRED
Case: TO264
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±25V
Collector current: 64A
Pulsed collector current: 600A
Turn-on time: 632ns
Turn-off time: 397ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 64A; 735W; TO264
Mounting: THT
Power dissipation: 735W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 400nC
Technology: BiMOSFET™; FRED
Case: TO264
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±25V
Collector current: 64A
Pulsed collector current: 600A
Turn-on time: 632ns
Turn-off time: 397ns
Type of transistor: IGBT
товар відсутній
| IXFA44N25X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 44A; Idm: 66A; 240W
Mounting: SMD
Power dissipation: 240W
Polarisation: unipolar
Kind of package: tube
Gate charge: 33nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 66A
Case: TO263
Reverse recovery time: 87ns
Drain-source voltage: 250V
Drain current: 44A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 44A; Idm: 66A; 240W
Mounting: SMD
Power dissipation: 240W
Polarisation: unipolar
Kind of package: tube
Gate charge: 33nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 66A
Case: TO263
Reverse recovery time: 87ns
Drain-source voltage: 250V
Drain current: 44A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
товар відсутній
| IXTN17N120L |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 34A
Power dissipation: 540W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.9Ω
Gate charge: 155nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 1.83µs
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 15A; SOT227B; screw; Idm: 34A
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 34A
Power dissipation: 540W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.9Ω
Gate charge: 155nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 1.83µs
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXBOD2-04 |
|
Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 400V
Type of thyristor: BOD
Max. load current: 0.9A
Case: FP-Case
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 400V
Category: Thyristors - others
Description: Thyristor: BOD; 0.9A; FP-Case; THT; bulk; 2nd Gen; 400V
Type of thyristor: BOD
Max. load current: 0.9A
Case: FP-Case
Mounting: THT
Kind of package: bulk
Technology: 2nd Gen
Breakover voltage: 400V
товар відсутній
| CPC1020N |
|
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.30VDC; max.30VAC; SMT; SOP4; 0.25Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 318.99 грн |
| CPC1020NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1.2A
Switched voltage: max. 30V AC; max. 30V DC
Relay variant: current source
On-state resistance: 0.25Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
товар відсутній
| CLA50E1200HB |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT; tube
Kind of package: tube
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Max. forward impulse current: 0.65kA
Type of thyristor: thyristor
Mounting: THT
Case: TO247AD
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; TO247AD; THT; tube
Kind of package: tube
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Max. forward impulse current: 0.65kA
Type of thyristor: thyristor
Mounting: THT
Case: TO247AD
на замовлення 226 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 335.42 грн |
| 3+ | 275.39 грн |
| 4+ | 248.34 грн |
| 9+ | 234.46 грн |
| 30+ | 231 грн |
| CLA50E1200TC-TUB |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 555A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 555A
на замовлення 120 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 549.82 грн |
| 3+ | 365.57 грн |
| 7+ | 345.45 грн |
| CLA50E1200TC-TRL |
|
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 555A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50/80mA
Case: D3PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 555A
товар відсутній
| MDD26-12N1B |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 36A; TO240AA; Ufmax: 1.05V
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 60A
Max. forward voltage: 1.05V
Load current: 36A
Semiconductor structure: double series
Max. forward impulse current: 555A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 36A; TO240AA; Ufmax: 1.05V
Case: TO240AA
Max. off-state voltage: 1.2kV
Max. load current: 60A
Max. forward voltage: 1.05V
Load current: 36A
Semiconductor structure: double series
Max. forward impulse current: 555A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
на замовлення 37 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1292.38 грн |
| 2+ | 1134.87 грн |
| 36+ | 1114.05 грн |
| MCC44-16io1B |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 49A; TO240AA; Ufmax: 1.34V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Type of module: thyristor
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.34V
Load current: 49A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.15kA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 49A; TO240AA; Ufmax: 1.34V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Type of module: thyristor
Case: TO240AA
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.34V
Load current: 49A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 1.15kA
на замовлення 26 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1816.06 грн |
| 2+ | 1594.78 грн |
| 3+ | 1594.08 грн |
| MCD162-16io1 |
|
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Threshold on-voltage: 0.88V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Gate current: 150/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Threshold on-voltage: 0.88V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
на замовлення 12 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3918.99 грн |
| CPC1001N |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4
Mounting: SMD
Case: SOP4
Insulation voltage: 1.5kV
Turn-on time: 1µs
Turn-off time: 30µs
Kind of output: transistor
CTR@If: 100-800%@0.2mA
Number of channels: 1
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4
Mounting: SMD
Case: SOP4
Insulation voltage: 1.5kV
Turn-on time: 1µs
Turn-off time: 30µs
Kind of output: transistor
CTR@If: 100-800%@0.2mA
Number of channels: 1
Type of optocoupler: optocoupler
на замовлення 832 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 61.46 грн |
| 20+ | 40.65 грн |
| 25+ | 40.58 грн |
| 55+ | 38.36 грн |
| 500+ | 37.67 грн |
| CPC1001NTR |
|
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4; -40÷85°C
Control current max.: 5mA
Max. operating current: 0.1A
Switched voltage: max. 30V DC
Mounting: SMD
Case: SOP4
Operating temperature: -40...85°C
Insulation voltage: 1.5kV
Turn-on time: 1µs
Turn-off time: 30µs
Kind of output: transistor
CTR@If: 100-800%@0.2mA
Number of channels: 1
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 1.5kV; SOP4; -40÷85°C
Control current max.: 5mA
Max. operating current: 0.1A
Switched voltage: max. 30V DC
Mounting: SMD
Case: SOP4
Operating temperature: -40...85°C
Insulation voltage: 1.5kV
Turn-on time: 1µs
Turn-off time: 30µs
Kind of output: transistor
CTR@If: 100-800%@0.2mA
Number of channels: 1
Type of optocoupler: optocoupler
товар відсутній
| CPC1002N |
|
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; 4.09x3.81x2.03mm
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 700mA
Switched voltage: max. 60V DC
Relay variant: current source
On-state resistance: 0.55Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 2ms
Kind of output: MOSFET
Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; 4.09x3.81x2.03mm
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 700mA
Switched voltage: max. 60V DC
Relay variant: current source
On-state resistance: 0.55Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 2ms
Kind of output: MOSFET
на замовлення 1068 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 135.96 грн |
| 14+ | 58.27 грн |
| 38+ | 55.49 грн |
| CPC1002NTR |
|
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; 4.09x3.81x2.03mm
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 700mA
Switched voltage: max. 60V DC
Relay variant: current source
On-state resistance: 0.55Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 2ms
Kind of output: MOSFET
Category: DC Solid State Relays
Description: Relay: solid state; 700mA; max.60VDC; SMT; SOP4; 4.09x3.81x2.03mm
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 700mA
Switched voltage: max. 60V DC
Relay variant: current source
On-state resistance: 0.55Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 2ms
Kind of output: MOSFET
товар відсутній
| CPC1006N |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
на замовлення 3479 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 91.89 грн |
| 13+ | 65.9 грн |
| 34+ | 62.43 грн |
| CPC1006NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
товар відсутній
| CPC1009N |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 0.5ms
Kind of output: MOSFET
на замовлення 438 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 148.66 грн |
| 13+ | 65.9 грн |
| 34+ | 62.43 грн |
| CPC1009NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 0.5ms
Kind of output: MOSFET
товар відсутній
| IXKH47N60C |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
товар відсутній
| IXKR47N60C5 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 278W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 278W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: super junction coolmos
на замовлення 13 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1302.1 грн |
| 2+ | 1143.19 грн |
| DSS10-01AS-TUB |
|
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 10A; D2PAK; tube; 90W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Max. load current: 35A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Case: D2PAK
Kind of package: tube
Max. forward impulse current: 120A
Power dissipation: 90W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 10A; D2PAK; tube; 90W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Max. load current: 35A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Case: D2PAK
Kind of package: tube
Max. forward impulse current: 120A
Power dissipation: 90W
товар відсутній
| DSSK16-01AS |
|
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 8Ax2; D2PAK; reel,tape; 90W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 120A
Power dissipation: 90W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 8Ax2; D2PAK; reel,tape; 90W
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Case: D2PAK
Kind of package: reel; tape
Max. forward impulse current: 120A
Power dissipation: 90W
товар відсутній
| DSS10-01A |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; 90W; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A
Max. load current: 35A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 120A
Power dissipation: 90W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; 90W; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A
Max. load current: 35A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 120A
Power dissipation: 90W
товар відсутній
| DSS20-01AC |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20A; 90W; ISOPLUS220™; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Case: ISOPLUS220™
Kind of package: tube
Max. forward impulse current: 120A
Power dissipation: 90W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20A; 90W; ISOPLUS220™; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Case: ISOPLUS220™
Kind of package: tube
Max. forward impulse current: 120A
Power dissipation: 90W
товар відсутній
| DSSK16-01A |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8Ax2; 90W; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 120A
Power dissipation: 90W
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 8Ax2; 90W; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 120A
Power dissipation: 90W
Heatsink thickness: 1.14...1.39mm
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 86.71 грн |
| DSSK30-01A |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; 105W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.64V
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 230A
Power dissipation: 105W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; 105W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.64V
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 230A
Power dissipation: 105W
товар відсутній
| DSSK50-01A |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; 135W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 25A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 0.45kA
Power dissipation: 135W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 25Ax2; 135W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 25A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 0.45kA
Power dissipation: 135W
товар відсутній
| DSSS30-01AR |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; 190W; ISOPLUS247™
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 30A x2
Semiconductor structure: double series
Max. forward voltage: 0.63V
Case: ISOPLUS247™
Kind of package: tube
Max. forward impulse current: 600A
Power dissipation: 190W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; 190W; ISOPLUS247™
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 30A x2
Semiconductor structure: double series
Max. forward voltage: 0.63V
Case: ISOPLUS247™
Kind of package: tube
Max. forward impulse current: 600A
Power dissipation: 190W
товар відсутній
| MIXA80R1200VA |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 390W
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: V1-A-Pack
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Power dissipation: 390W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 390W
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: V1-A-Pack
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Power dissipation: 390W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
товар відсутній
| MIXA150Q1200VA |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 695W
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: V1-A-Pack
Electrical mounting: FASTON connectors
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Power dissipation: 695W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; 695W
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: V1-A-Pack
Electrical mounting: FASTON connectors
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Power dissipation: 695W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
товар відсутній
| MIXA150R1200VA |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 695W
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: V1-A-Pack
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Power dissipation: 695W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 695W
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: V1-A-Pack
Application: fans; for pump; motors; photovoltaics
Electrical mounting: FASTON connectors
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Power dissipation: 695W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
товар відсутній
| IXA60IF1200NA |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 56A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 56A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 290W
Technology: XPT™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 56A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 56A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 290W
Technology: XPT™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1580 грн |
| 2+ | 1387.37 грн |
| IXA70I1200NA |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 65A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 350W
Technology: XPT™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 65A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 350W
Technology: XPT™
Features of semiconductor devices: high voltage
Mechanical mounting: screw
товар відсутній
| IXDN55N120D1 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 62A; SOT227B
Technology: NPT
Collector current: 62A
Power dissipation: 450W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 124A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Features of semiconductor devices: high voltage
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 62A; SOT227B
Technology: NPT
Collector current: 62A
Power dissipation: 450W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 124A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Features of semiconductor devices: high voltage
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| IXDN75N120 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 150A; SOT227B
Technology: NPT
Collector current: 150A
Power dissipation: 660W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 150A; SOT227B
Technology: NPT
Collector current: 150A
Power dissipation: 660W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| IXG70IF1200NA |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 86A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 86A
Case: SOT227B
Electrical mounting: screw
Technology: X2PT
Features of semiconductor devices: integrated anti-parallel diode
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 86A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 86A
Case: SOT227B
Electrical mounting: screw
Technology: X2PT
Features of semiconductor devices: integrated anti-parallel diode
Mechanical mounting: screw
товар відсутній
| IXGN50N120C3H1 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Technology: GenX3™; PT
Collector current: 50A
Power dissipation: 460W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Technology: GenX3™; PT
Collector current: 50A
Power dissipation: 460W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
на замовлення 6 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2146.25 грн |
| 2+ | 1884.04 грн |
| IXBH42N170 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™; FRED
Collector-emitter voltage: 1.7kV
Collector current: 42A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Turn-on time: 224ns
Turn-off time: 1.07µs
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™; FRED
Collector-emitter voltage: 1.7kV
Collector current: 42A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Turn-on time: 224ns
Turn-off time: 1.07µs
Features of semiconductor devices: high voltage
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1506.04 грн |
| 2+ | 1322.85 грн |
| 3+ | 1322.16 грн |
| IXTA70N075T2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; 150W; TO263; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Power dissipation: 150W
Case: TO263
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; 150W; TO263; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Power dissipation: 150W
Case: TO263
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 48ns
товар відсутній
| IXKC19N60C5 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 430ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 430ns
товар відсутній
| MMIX1G320N60B3 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 180A
Power dissipation: 1kW
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Mounting: SMD
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 600V; 180A; 1kW; SMPD
Type of transistor: IGBT
Technology: BiMOSFET™; GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 180A
Power dissipation: 1kW
Case: SMPD
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Mounting: SMD
Gate charge: 585nC
Kind of package: tube
Turn-on time: 107ns
Turn-off time: 595ns
товар відсутній
| IXDN602D2TR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V
Mounting: SMD
Case: DFN8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Supply voltage: 4.5...35V
Turn-on time: 93ns
Turn-off time: 93ns
Output current: -2...2A
Type of integrated circuit: driver
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V
Mounting: SMD
Case: DFN8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Supply voltage: 4.5...35V
Turn-on time: 93ns
Turn-off time: 93ns
Output current: -2...2A
Type of integrated circuit: driver
Number of channels: 2
на замовлення 1998 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 60.35 грн |
| 15+ | 54.8 грн |
| 41+ | 52.03 грн |
| 100+ | 50.64 грн |
| IXDN602PI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
товар відсутній
| IXDN602SI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
товар відсутній
| IXDN602SIA |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
на замовлення 222 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 79.19 грн |
| 6+ | 65.9 грн |
| 17+ | 49.25 грн |
| 45+ | 47.17 грн |
| IXDN602SIATR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
товар відсутній
| IXDN602SITR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
товар відсутній
| IXGA20N120A3 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 180W
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 120A
Turn-on time: 66ns
Turn-off time: 1.53µs
Type of transistor: IGBT
Gate charge: 50nC
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 180W
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 120A
Turn-on time: 66ns
Turn-off time: 1.53µs
Type of transistor: IGBT
Gate charge: 50nC
товар відсутній
| IXGA20N120B3 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 180W
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 80A
Turn-on time: 61ns
Turn-off time: 720ns
Type of transistor: IGBT
Gate charge: 51nC
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Power dissipation: 180W
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 80A
Turn-on time: 61ns
Turn-off time: 720ns
Type of transistor: IGBT
Gate charge: 51nC
товар відсутній
| IXDH30N120D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 38A; 300W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.2kV
Collector current: 38A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 76A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 170ns
Turn-off time: 570ns
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 38A; 300W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.2kV
Collector current: 38A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 76A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 170ns
Turn-off time: 570ns
товар відсутній
| IXFB30N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
товар відсутній
| IXFN30N120P |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.35Ω
Gate charge: 310nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.35Ω
Gate charge: 310nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXGA30N120B3 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: SMD
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
товар відсутній
| IXGH30N120B3D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
товар відсутній