| Фото | Назва | Виробник | Інформація |
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VUE75-12NO7 | IXYS |
 Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 74A; Ifsm: 200A Type of bridge rectifier: three-phase Max. off-state voltage: 1.2kV Load current: 74A Max. forward impulse current: 200A Electrical mounting: THT Version: module Max. forward voltage: 2.71V Leads: wire Ø 1.5mm Case: ECO-PAC 1 Mechanical mounting: screw Technology: FRED |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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IXFT170N25X3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO268HV; 140ns Mounting: SMD Kind of package: tube Drain current: 170A Kind of channel: enhanced Drain-source voltage: 250V Type of transistor: N-MOSFET Case: TO268HV On-state resistance: 7.4mΩ Reverse recovery time: 140ns Power dissipation: 890W Gate charge: 0.19µC Polarisation: unipolar Features of semiconductor devices: ultra junction x-class |
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IXBP5N160G | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.6kV; 3.5A; 68W; TO220-3 Mounting: THT Case: TO220-3 Kind of package: tube Power dissipation: 68W Gate charge: 26nC Technology: BiMOSFET™ Features of semiconductor devices: high voltage Pulsed collector current: 6A Type of transistor: IGBT Turn-on time: 340ns Turn-off time: 190ns Gate-emitter voltage: ±20V Collector current: 3.5A Collector-emitter voltage: 1.6kV |
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IXXK200N60B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264 Mounting: THT Kind of package: tube Technology: GenX3™; Planar; XPT™ Case: TO264 Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 900A Turn-on time: 140ns Turn-off time: 395ns Type of transistor: IGBT Power dissipation: 1.63kW Gate charge: 315nC |
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IXXK200N60C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264 Mounting: THT Kind of package: tube Technology: GenX3™; Planar; XPT™ Case: TO264 Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 900A Turn-on time: 143ns Turn-off time: 240ns Type of transistor: IGBT Power dissipation: 1.63kW Gate charge: 315nC |
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IXXK200N65B4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; TO264 Mounting: THT Kind of package: tube Technology: GenX4™; Trench; XPT™ Case: TO264 Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 1kA Turn-on time: 135ns Turn-off time: 370ns Type of transistor: IGBT Power dissipation: 1.63kW Gate charge: 517nC |
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IXGT16N170 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO268 Mounting: SMD Pulsed collector current: 80A Type of transistor: IGBT Turn-on time: 90ns Kind of package: tube Case: TO268 Turn-off time: 1.6µs Gate-emitter voltage: ±20V Collector current: 16A Collector-emitter voltage: 1.7kV Power dissipation: 190W Gate charge: 78nC Technology: NPT Features of semiconductor devices: high voltage |
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IXGT16N170A | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268 Mounting: SMD Pulsed collector current: 40A Type of transistor: IGBT Turn-on time: 35ns Kind of package: tube Case: TO268 Turn-off time: 298ns Gate-emitter voltage: ±20V Collector current: 11A Collector-emitter voltage: 1.7kV Power dissipation: 190W Gate charge: 70nC Technology: NPT Features of semiconductor devices: high voltage |
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IXGT16N170AH1 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268 Mounting: SMD Pulsed collector current: 40A Type of transistor: IGBT Turn-on time: 35ns Kind of package: tube Case: TO268 Turn-off time: 298ns Gate-emitter voltage: ±20V Collector current: 11A Collector-emitter voltage: 1.7kV Power dissipation: 190W Gate charge: 70nC Technology: NPT Features of semiconductor devices: high voltage |
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IXGA24N120C3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO263 Case: TO263 Pulsed collector current: 96A Turn-on time: 51ns Turn-off time: 430ns Type of transistor: IGBT Power dissipation: 250W Kind of package: tube Gate charge: 79nC Technology: GenX3™; PT Mounting: SMD Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 24A |
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IXGH24N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3 Case: TO247-3 Pulsed collector current: 96A Turn-on time: 51ns Turn-off time: 430ns Type of transistor: IGBT Power dissipation: 250W Kind of package: tube Gate charge: 79nC Technology: GenX3™; PT Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 24A |
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IXGP24N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO220-3 Case: TO220-3 Pulsed collector current: 96A Turn-on time: 51ns Turn-off time: 430ns Type of transistor: IGBT Power dissipation: 250W Kind of package: tube Gate charge: 79nC Technology: GenX3™; PT Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 24A |
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IXGH24N170 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 24A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 106nC Kind of package: tube Turn-on time: 105ns Turn-off time: 560ns Features of semiconductor devices: high voltage |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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IXGH24N170A | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.7kV Collector current: 24A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 75A Mounting: THT Gate charge: 0.14µC Kind of package: tube Turn-on time: 54ns Turn-off time: 456ns Features of semiconductor devices: high voltage |
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IXGT24N170 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268 Kind of package: tube Collector-emitter voltage: 1.7kV Power dissipation: 250W Gate charge: 106nC Technology: NPT Features of semiconductor devices: high voltage Pulsed collector current: 150A Type of transistor: IGBT Turn-on time: 105ns Case: TO268 Turn-off time: 560ns Gate-emitter voltage: ±20V Collector current: 24A Mounting: SMD |
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IXGT24N170A | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268 Kind of package: tube Collector-emitter voltage: 1.7kV Power dissipation: 250W Gate charge: 0.14µC Technology: NPT Features of semiconductor devices: high voltage Pulsed collector current: 75A Type of transistor: IGBT Turn-on time: 54ns Case: TO268 Turn-off time: 456ns Gate-emitter voltage: ±20V Collector current: 24A Mounting: SMD |
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IXGH24N120C3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3 Mounting: THT Gate-emitter voltage: ±20V Collector current: 24A Pulsed collector current: 96A Turn-on time: 51ns Turn-off time: 430ns Type of transistor: IGBT Power dissipation: 250W Kind of package: tube Gate charge: 79nC Technology: GenX3™; PT; Sonic FRD™ Case: TO247-3 Collector-emitter voltage: 1.2kV |
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IXFR64N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 37A; 300W; 200ns Type of transistor: N-MOSFET Technology: HiPerFET™; PolarHV™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 37A Power dissipation: 300W Case: ISOPLUS247™ Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns |
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IXFR64N50Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 45A; 500W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 45A Power dissipation: 500W Case: ISOPLUS247™ On-state resistance: 94mΩ Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhanced |
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IXFT44N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 650W Case: TO268 On-state resistance: 0.14Ω Mounting: SMD Gate charge: 98nC Kind of package: tube Kind of channel: enhanced |
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IXFT44N50Q3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 830W Case: TO268 On-state resistance: 0.14Ω Mounting: SMD Gate charge: 93nC Kind of package: tube Kind of channel: enhanced |
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IXFX64N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 64A Power dissipation: 830W Case: PLUS247™ On-state resistance: 85mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced |
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IXFX64N50Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 64A Power dissipation: 1kW Case: PLUS247™ On-state resistance: 85mΩ Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhanced |
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IXFX74N50P2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 74A; 1400W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 74A Power dissipation: 1.4kW Case: PLUS247™ On-state resistance: 77mΩ Mounting: THT Gate charge: 165nC Kind of package: tube Kind of channel: enhanced |
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IXFX94N50P2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 94A; 1300W; PLUS247™ Type of transistor: N-MOSFET Technology: HiPerFET™; Polar2™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 94A Power dissipation: 1.3kW Case: PLUS247™ Gate-source voltage: ±30V On-state resistance: 55mΩ Mounting: THT Gate charge: 228nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
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IXTQ44N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 650W Case: TO3P On-state resistance: 0.14Ω Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 400ns |
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DSS6-0025BS | IXYS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 25V; 6A; DPAK; reel,tape; 40W Power dissipation: 40W Case: DPAK Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 25V Type of diode: Schottky rectifying Max. forward impulse current: 120A Max. forward voltage: 0.3V Load current: 6A |
на замовлення 1123 шт: термін постачання 21-30 дні (днів) |
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DSS6-0045AS-TRL | IXYS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 6A; DPAK; reel,tape; 50W Power dissipation: 50W Case: DPAK Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 45V Type of diode: Schottky rectifying Max. forward impulse current: 120A Max. forward voltage: 0.5V Load current: 6A |
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DSS6-0045AS-TUB | IXYS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 45V; 6A; DPAK; tube; 50W Power dissipation: 50W Case: DPAK Mounting: SMD Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 45V Type of diode: Schottky rectifying Max. forward impulse current: 120A Max. forward voltage: 0.5V Load current: 6A |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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CPC1979J | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1400mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 100mA Max. operating current: 1.4A Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source On-state resistance: 0.75Ω Mounting: THT Case: ISOPLUS264™ Operating temperature: -40...85°C Body dimensions: 19.91x26.16x5.03mm Insulation voltage: 2.5kV Manufacturer series: OptoMOS Turn-on time: 25ms Turn-off time: 5ms Kind of output: MOSFET |
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IXXH30N65B4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 230W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 146A Mounting: THT Gate charge: 52nC Kind of package: tube Turn-on time: 65ns Turn-off time: 206ns |
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IXXH30N65B4D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 230W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 146A Mounting: THT Gate charge: 52nC Kind of package: tube Turn-on time: 65ns Turn-off time: 206ns |
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IXXH30N65C4D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 230W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 136A Mounting: THT Gate charge: 47nC Kind of package: tube Turn-on time: 65ns Turn-off time: 161ns |
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IXYH30N65C3H1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3 Mounting: THT Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 118A Turn-on time: 59ns Turn-off time: 0.12µs Type of transistor: IGBT Power dissipation: 270W Kind of package: tube Gate charge: 44nC Technology: GenX3™; Planar; Sonic FRD™; XPT™ Case: TO247-3 Collector-emitter voltage: 650V |
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IXYP30N65C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 270W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 118A Mounting: THT Gate charge: 44nC Kind of package: tube Turn-on time: 59ns Turn-off time: 0.12µs |
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| IXYT30N65C3H1HV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV Mounting: SMD Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 118A Turn-on time: 59ns Turn-off time: 0.12µs Type of transistor: IGBT Power dissipation: 270W Kind of package: tube Gate charge: 44nC Technology: GenX3™; Planar; Sonic FRD™; XPT™ Case: TO268HV Collector-emitter voltage: 650V |
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MCMA65P1200TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 65A; Ifmax: 105A; TO240AA Max. off-state voltage: 1.2kV Load current: 65A Max. load current: 105A Semiconductor structure: double series Kind of package: bulk Max. forward impulse current: 1.15kA Case: TO240AA Max. forward voltage: 1.17V Gate current: 95/200mA Mechanical mounting: screw Electrical mounting: screw Type of module: thyristor |
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MCMA85P1200TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 85A; Ifmax: 135A; TO240AA Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 85A Case: TO240AA Max. forward voltage: 1.51V Max. forward impulse current: 1.28kA Electrical mounting: screw Max. load current: 135A Mechanical mounting: screw Kind of package: bulk Gate current: 95/200mA |
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MCMA140P1200TA | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.2kV; 140A; TO240AA; Ufmax: 1.7V Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 140A Case: TO240AA Max. forward voltage: 1.7V Gate current: 150/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
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DSI45-08A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 45A; tube; Ifsm: 410A; TO247-2; 270W Max. off-state voltage: 0.8kV Load current: 45A Max. forward impulse current: 410A Case: TO247-2 Kind of package: tube Max. forward voltage: 1.23V Mounting: THT Semiconductor structure: single diode Power dissipation: 270W Type of diode: rectifying |
на замовлення 124 шт: термін постачання 21-30 дні (днів) |
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DSI45-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 45A; tube; Ifsm: 480A; TO247-2; 270W Mounting: THT Max. forward voltage: 1.23V Load current: 45A Semiconductor structure: single diode Max. forward impulse current: 0.48kA Power dissipation: 270W Kind of package: tube Type of diode: rectifying Case: TO247-2 Max. off-state voltage: 1.2kV |
на замовлення 93 шт: термін постачання 21-30 дні (днів) |
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DSSK60-0045B | IXYS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; 115W; TO247-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 30A x2 Power dissipation: 115W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 0.65kA Max. forward voltage: 0.44V |
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| MKE38RK600DFELB | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 50A; SMPD; diode/transistor Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 50A Case: SMPD Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 0.19µC Kind of channel: enhanced Semiconductor structure: diode/transistor Reverse recovery time: 50ns |
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DPG30I400HA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 30A; tube; Ifsm: 360A; TO247-2; 160W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 30A Reverse recovery time: 45ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO247-2 Max. forward voltage: 1.13V Max. forward impulse current: 360A Power dissipation: 160W Technology: HiPerFRED™ 2nd Gen Kind of package: tube |
на замовлення 54 шт: термін постачання 21-30 дні (днів) |
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LOC112 | IXYS |
Category: Optocouplers - others Description: Optocoupler; THT; Ch: 1; 3.75kV; DIP8; 1A Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Insulation voltage: 3.75kV Case: DIP8 Trigger current: 1A |
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LOC112S | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV Trigger current: 1A |
на замовлення 39 шт: термін постачання 21-30 дні (днів) |
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LOC112STR | IXYS |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV Trigger current: 1A |
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| MD16130S-DKM2MM | IXYS |
Category: Diode modules Description: Module: diode; double,common cathode; 1.6kV; If: 130A; package S Max. off-state voltage: 1.6kV Max. load current: 204A Max. forward voltage: 1.5V Load current: 130A Semiconductor structure: common cathode; double Max. forward impulse current: 3.5kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode Case: package S |
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IXDI609CI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -9...9A Number of channels: 1 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting Turn-on time: 115ns Turn-off time: 105ns |
на замовлення 801 шт: термін постачання 21-30 дні (днів) |
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IXDI614CI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -14...14A Number of channels: 1 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting Turn-on time: 140ns Turn-off time: 130ns |
на замовлення 1115 шт: термін постачання 21-30 дні (днів) |
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IXDI630CI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -30...30A Number of channels: 1 Supply voltage: 12.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting Turn-on time: 135ns Turn-off time: 135ns |
товар відсутній |
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IXDI630MCI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -30...30A Number of channels: 1 Supply voltage: 12.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting Turn-on time: 135ns Turn-off time: 135ns |
на замовлення 232 шт: термін постачання 21-30 дні (днів) |
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IXDN609CI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -9...9A Number of channels: 1 Supply voltage: 4.5...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
на замовлення 1120 шт: термін постачання 21-30 дні (днів) |
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IXDN630CI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V Type of integrated circuit: driver Case: TO220-5 Mounting: THT Kind of package: tube Number of channels: 1 Supply voltage: 12.5...35V Output current: -30...30A Kind of output: non-inverting Operating temperature: -40...125°C Kind of integrated circuit: gate driver; low-side Turn-on time: 135ns Turn-off time: 135ns |
на замовлення 215 шт: термін постачання 21-30 дні (днів) |
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IXDN630MCI | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -30...30A Number of channels: 1 Supply voltage: 9...35V Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 135ns Turn-off time: 135ns |
на замовлення 173 шт: термін постачання 21-30 дні (днів) |
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CPC1981Y | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 180mA; max.1kVAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 180mA Switched voltage: max. 1kV AC Relay variant: 1-phase On-state resistance: 18Ω Mounting: THT Case: SIP4 Operating temperature: -40...85°C Body dimensions: 21.08x10.16x3.3mm Insulation voltage: 2.5kV Manufacturer series: OptoMOS Turn-on time: 10ms Turn-off time: 5ms Kind of output: MOSFET |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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CPC1983Y | IXYS |
Category: DC Solid State Relays Description: Relay: solid state; 500mA; max.600VDC; THT; SIP4; -40÷85°C; 6Ω Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.5A Switched voltage: max. 600V DC Relay variant: current source On-state resistance: 6Ω Mounting: THT Case: SIP4 Operating temperature: -40...85°C Body dimensions: 21.08x10.16x3.3mm Insulation voltage: 2.5kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 2ms Kind of output: MOSFET |
на замовлення 96 шт: термін постачання 21-30 дні (днів) |
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CPC1983YE | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 500mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.5A Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source On-state resistance: 6Ω Mounting: THT Case: SIP4 Operating temperature: -40...85°C Body dimensions: 21.08x10.16x3.3mm Insulation voltage: 4kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 2ms Kind of output: MOSFET |
на замовлення 97 шт: термін постачання 21-30 дні (днів) |
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IXFR32N80P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 300W; ISOPLUS247™ Case: ISOPLUS247™ Mounting: THT Kind of package: tube On-state resistance: 0.29Ω Drain current: 20A Drain-source voltage: 800V Power dissipation: 300W Polarisation: unipolar Gate charge: 150nC Kind of channel: enhanced Type of transistor: N-MOSFET |
товар відсутній |
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IXTH24P20 | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -24A; 300W; TO247-3; 250ns Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -24A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
товар відсутній |
| VUE75-12NO7 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 74A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 74A
Max. forward impulse current: 200A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.71V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 74A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 74A
Max. forward impulse current: 200A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.71V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1314.22 грн |
| 2+ | 1154.21 грн |
| 3+ | 1153.49 грн |
| IXFT170N25X3HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO268HV; 140ns
Mounting: SMD
Kind of package: tube
Drain current: 170A
Kind of channel: enhanced
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Case: TO268HV
On-state resistance: 7.4mΩ
Reverse recovery time: 140ns
Power dissipation: 890W
Gate charge: 0.19µC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 170A; 890W; TO268HV; 140ns
Mounting: SMD
Kind of package: tube
Drain current: 170A
Kind of channel: enhanced
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Case: TO268HV
On-state resistance: 7.4mΩ
Reverse recovery time: 140ns
Power dissipation: 890W
Gate charge: 0.19µC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
товар відсутній
| IXBP5N160G |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.6kV; 3.5A; 68W; TO220-3
Mounting: THT
Case: TO220-3
Kind of package: tube
Power dissipation: 68W
Gate charge: 26nC
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 6A
Type of transistor: IGBT
Turn-on time: 340ns
Turn-off time: 190ns
Gate-emitter voltage: ±20V
Collector current: 3.5A
Collector-emitter voltage: 1.6kV
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.6kV; 3.5A; 68W; TO220-3
Mounting: THT
Case: TO220-3
Kind of package: tube
Power dissipation: 68W
Gate charge: 26nC
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 6A
Type of transistor: IGBT
Turn-on time: 340ns
Turn-off time: 190ns
Gate-emitter voltage: ±20V
Collector current: 3.5A
Collector-emitter voltage: 1.6kV
товар відсутній
| IXXK200N60B3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264
Mounting: THT
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Case: TO264
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 900A
Turn-on time: 140ns
Turn-off time: 395ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Gate charge: 315nC
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264
Mounting: THT
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Case: TO264
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 900A
Turn-on time: 140ns
Turn-off time: 395ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Gate charge: 315nC
товар відсутній
| IXXK200N60C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264
Mounting: THT
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Case: TO264
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 900A
Turn-on time: 143ns
Turn-off time: 240ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Gate charge: 315nC
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264
Mounting: THT
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Case: TO264
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 900A
Turn-on time: 143ns
Turn-off time: 240ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Gate charge: 315nC
товар відсутній
| IXXK200N65B4 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; TO264
Mounting: THT
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Case: TO264
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1kA
Turn-on time: 135ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Gate charge: 517nC
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; TO264
Mounting: THT
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Case: TO264
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1kA
Turn-on time: 135ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 1.63kW
Gate charge: 517nC
товар відсутній
| IXGT16N170 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO268
Mounting: SMD
Pulsed collector current: 80A
Type of transistor: IGBT
Turn-on time: 90ns
Kind of package: tube
Case: TO268
Turn-off time: 1.6µs
Gate-emitter voltage: ±20V
Collector current: 16A
Collector-emitter voltage: 1.7kV
Power dissipation: 190W
Gate charge: 78nC
Technology: NPT
Features of semiconductor devices: high voltage
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO268
Mounting: SMD
Pulsed collector current: 80A
Type of transistor: IGBT
Turn-on time: 90ns
Kind of package: tube
Case: TO268
Turn-off time: 1.6µs
Gate-emitter voltage: ±20V
Collector current: 16A
Collector-emitter voltage: 1.7kV
Power dissipation: 190W
Gate charge: 78nC
Technology: NPT
Features of semiconductor devices: high voltage
товар відсутній
| IXGT16N170A |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Mounting: SMD
Pulsed collector current: 40A
Type of transistor: IGBT
Turn-on time: 35ns
Kind of package: tube
Case: TO268
Turn-off time: 298ns
Gate-emitter voltage: ±20V
Collector current: 11A
Collector-emitter voltage: 1.7kV
Power dissipation: 190W
Gate charge: 70nC
Technology: NPT
Features of semiconductor devices: high voltage
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Mounting: SMD
Pulsed collector current: 40A
Type of transistor: IGBT
Turn-on time: 35ns
Kind of package: tube
Case: TO268
Turn-off time: 298ns
Gate-emitter voltage: ±20V
Collector current: 11A
Collector-emitter voltage: 1.7kV
Power dissipation: 190W
Gate charge: 70nC
Technology: NPT
Features of semiconductor devices: high voltage
товар відсутній
| IXGT16N170AH1 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Mounting: SMD
Pulsed collector current: 40A
Type of transistor: IGBT
Turn-on time: 35ns
Kind of package: tube
Case: TO268
Turn-off time: 298ns
Gate-emitter voltage: ±20V
Collector current: 11A
Collector-emitter voltage: 1.7kV
Power dissipation: 190W
Gate charge: 70nC
Technology: NPT
Features of semiconductor devices: high voltage
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Mounting: SMD
Pulsed collector current: 40A
Type of transistor: IGBT
Turn-on time: 35ns
Kind of package: tube
Case: TO268
Turn-off time: 298ns
Gate-emitter voltage: ±20V
Collector current: 11A
Collector-emitter voltage: 1.7kV
Power dissipation: 190W
Gate charge: 70nC
Technology: NPT
Features of semiconductor devices: high voltage
товар відсутній
| IXGA24N120C3 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO263
Case: TO263
Pulsed collector current: 96A
Turn-on time: 51ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Gate charge: 79nC
Technology: GenX3™; PT
Mounting: SMD
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 24A
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO263
Case: TO263
Pulsed collector current: 96A
Turn-on time: 51ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Gate charge: 79nC
Technology: GenX3™; PT
Mounting: SMD
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 24A
товар відсутній
| IXGH24N120C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Case: TO247-3
Pulsed collector current: 96A
Turn-on time: 51ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Gate charge: 79nC
Technology: GenX3™; PT
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 24A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Case: TO247-3
Pulsed collector current: 96A
Turn-on time: 51ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Gate charge: 79nC
Technology: GenX3™; PT
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 24A
товар відсутній
| IXGP24N120C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO220-3
Case: TO220-3
Pulsed collector current: 96A
Turn-on time: 51ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Gate charge: 79nC
Technology: GenX3™; PT
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 24A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO220-3
Case: TO220-3
Pulsed collector current: 96A
Turn-on time: 51ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Gate charge: 79nC
Technology: GenX3™; PT
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 24A
товар відсутній
| IXGH24N170 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 560ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 560ns
Features of semiconductor devices: high voltage
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1051.53 грн |
| 3+ | 923.08 грн |
| IXGH24N170A |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 456ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 456ns
Features of semiconductor devices: high voltage
товар відсутній
| IXGT24N170 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268
Kind of package: tube
Collector-emitter voltage: 1.7kV
Power dissipation: 250W
Gate charge: 106nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 150A
Type of transistor: IGBT
Turn-on time: 105ns
Case: TO268
Turn-off time: 560ns
Gate-emitter voltage: ±20V
Collector current: 24A
Mounting: SMD
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268
Kind of package: tube
Collector-emitter voltage: 1.7kV
Power dissipation: 250W
Gate charge: 106nC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 150A
Type of transistor: IGBT
Turn-on time: 105ns
Case: TO268
Turn-off time: 560ns
Gate-emitter voltage: ±20V
Collector current: 24A
Mounting: SMD
товар відсутній
| IXGT24N170A |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268
Kind of package: tube
Collector-emitter voltage: 1.7kV
Power dissipation: 250W
Gate charge: 0.14µC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 75A
Type of transistor: IGBT
Turn-on time: 54ns
Case: TO268
Turn-off time: 456ns
Gate-emitter voltage: ±20V
Collector current: 24A
Mounting: SMD
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO268
Kind of package: tube
Collector-emitter voltage: 1.7kV
Power dissipation: 250W
Gate charge: 0.14µC
Technology: NPT
Features of semiconductor devices: high voltage
Pulsed collector current: 75A
Type of transistor: IGBT
Turn-on time: 54ns
Case: TO268
Turn-off time: 456ns
Gate-emitter voltage: ±20V
Collector current: 24A
Mounting: SMD
товар відсутній
| IXGH24N120C3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 96A
Turn-on time: 51ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Gate charge: 79nC
Technology: GenX3™; PT; Sonic FRD™
Case: TO247-3
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 96A
Turn-on time: 51ns
Turn-off time: 430ns
Type of transistor: IGBT
Power dissipation: 250W
Kind of package: tube
Gate charge: 79nC
Technology: GenX3™; PT; Sonic FRD™
Case: TO247-3
Collector-emitter voltage: 1.2kV
товар відсутній
| IXFR64N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 37A; 300W; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 37A
Power dissipation: 300W
Case: ISOPLUS247™
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 37A; 300W; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 37A
Power dissipation: 300W
Case: ISOPLUS247™
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
товар відсутній
| IXFR64N50Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 94mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 94mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFT44N50P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFT44N50Q3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFX64N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFX64N50Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFX74N50P2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 74A; 1400W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 74A
Power dissipation: 1.4kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 74A; 1400W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 74A
Power dissipation: 1.4kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFX94N50P2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 94A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar2™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 94A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar2™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
товар відсутній
| IXTQ44N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO3P
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO3P
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
товар відсутній
| DSS6-0025BS |
|
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 25V; 6A; DPAK; reel,tape; 40W
Power dissipation: 40W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 25V
Type of diode: Schottky rectifying
Max. forward impulse current: 120A
Max. forward voltage: 0.3V
Load current: 6A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 25V; 6A; DPAK; reel,tape; 40W
Power dissipation: 40W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 25V
Type of diode: Schottky rectifying
Max. forward impulse current: 120A
Max. forward voltage: 0.3V
Load current: 6A
на замовлення 1123 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 94.2 грн |
| 7+ | 54.76 грн |
| 10+ | 48.36 грн |
| 20+ | 41.96 грн |
| 54+ | 39.82 грн |
| DSS6-0045AS-TRL |
|
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 6A; DPAK; reel,tape; 50W
Power dissipation: 50W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 45V
Type of diode: Schottky rectifying
Max. forward impulse current: 120A
Max. forward voltage: 0.5V
Load current: 6A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 6A; DPAK; reel,tape; 50W
Power dissipation: 50W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 45V
Type of diode: Schottky rectifying
Max. forward impulse current: 120A
Max. forward voltage: 0.5V
Load current: 6A
товар відсутній
| DSS6-0045AS-TUB |
|
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 6A; DPAK; tube; 50W
Power dissipation: 50W
Case: DPAK
Mounting: SMD
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 45V
Type of diode: Schottky rectifying
Max. forward impulse current: 120A
Max. forward voltage: 0.5V
Load current: 6A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 45V; 6A; DPAK; tube; 50W
Power dissipation: 50W
Case: DPAK
Mounting: SMD
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 45V
Type of diode: Schottky rectifying
Max. forward impulse current: 120A
Max. forward voltage: 0.5V
Load current: 6A
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 382.93 грн |
| CPC1979J |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1400mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 1.4A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 0.75Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Body dimensions: 19.91x26.16x5.03mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 25ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1400mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 1.4A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 0.75Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Body dimensions: 19.91x26.16x5.03mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 25ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
| IXXH30N65B4 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 146A
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 206ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 146A
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 206ns
товар відсутній
| IXXH30N65B4D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 146A
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 206ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 146A
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 206ns
товар відсутній
| IXXH30N65C4D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 136A
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 161ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 136A
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 161ns
товар відсутній
| IXYH30N65C3H1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Type of transistor: IGBT
Power dissipation: 270W
Kind of package: tube
Gate charge: 44nC
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Case: TO247-3
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Type of transistor: IGBT
Power dissipation: 270W
Kind of package: tube
Gate charge: 44nC
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Case: TO247-3
Collector-emitter voltage: 650V
товар відсутній
| IXYP30N65C3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
товар відсутній
| IXYT30N65C3H1HV |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Mounting: SMD
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Type of transistor: IGBT
Power dissipation: 270W
Kind of package: tube
Gate charge: 44nC
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Case: TO268HV
Collector-emitter voltage: 650V
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Mounting: SMD
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Type of transistor: IGBT
Power dissipation: 270W
Kind of package: tube
Gate charge: 44nC
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Case: TO268HV
Collector-emitter voltage: 650V
товар відсутній
| MCMA65P1200TA |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 65A; Ifmax: 105A; TO240AA
Max. off-state voltage: 1.2kV
Load current: 65A
Max. load current: 105A
Semiconductor structure: double series
Kind of package: bulk
Max. forward impulse current: 1.15kA
Case: TO240AA
Max. forward voltage: 1.17V
Gate current: 95/200mA
Mechanical mounting: screw
Electrical mounting: screw
Type of module: thyristor
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 65A; Ifmax: 105A; TO240AA
Max. off-state voltage: 1.2kV
Load current: 65A
Max. load current: 105A
Semiconductor structure: double series
Kind of package: bulk
Max. forward impulse current: 1.15kA
Case: TO240AA
Max. forward voltage: 1.17V
Gate current: 95/200mA
Mechanical mounting: screw
Electrical mounting: screw
Type of module: thyristor
товар відсутній
| MCMA85P1200TA |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 85A; Ifmax: 135A; TO240AA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 85A
Case: TO240AA
Max. forward voltage: 1.51V
Max. forward impulse current: 1.28kA
Electrical mounting: screw
Max. load current: 135A
Mechanical mounting: screw
Kind of package: bulk
Gate current: 95/200mA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 85A; Ifmax: 135A; TO240AA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 85A
Case: TO240AA
Max. forward voltage: 1.51V
Max. forward impulse current: 1.28kA
Electrical mounting: screw
Max. load current: 135A
Mechanical mounting: screw
Kind of package: bulk
Gate current: 95/200mA
товар відсутній
| MCMA140P1200TA |
|
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 140A; TO240AA; Ufmax: 1.7V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 140A; TO240AA; Ufmax: 1.7V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
| DSI45-08A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 45A; tube; Ifsm: 410A; TO247-2; 270W
Max. off-state voltage: 0.8kV
Load current: 45A
Max. forward impulse current: 410A
Case: TO247-2
Kind of package: tube
Max. forward voltage: 1.23V
Mounting: THT
Semiconductor structure: single diode
Power dissipation: 270W
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 45A; tube; Ifsm: 410A; TO247-2; 270W
Max. off-state voltage: 0.8kV
Load current: 45A
Max. forward impulse current: 410A
Case: TO247-2
Kind of package: tube
Max. forward voltage: 1.23V
Mounting: THT
Semiconductor structure: single diode
Power dissipation: 270W
Type of diode: rectifying
на замовлення 124 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 283.37 грн |
| 3+ | 236.1 грн |
| 5+ | 188.46 грн |
| 13+ | 177.79 грн |
| 120+ | 174.94 грн |
| DSI45-12A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Mounting: THT
Max. forward voltage: 1.23V
Load current: 45A
Semiconductor structure: single diode
Max. forward impulse current: 0.48kA
Power dissipation: 270W
Kind of package: tube
Type of diode: rectifying
Case: TO247-2
Max. off-state voltage: 1.2kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Mounting: THT
Max. forward voltage: 1.23V
Load current: 45A
Semiconductor structure: single diode
Max. forward impulse current: 0.48kA
Power dissipation: 270W
Kind of package: tube
Type of diode: rectifying
Case: TO247-2
Max. off-state voltage: 1.2kV
на замовлення 93 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 273.41 грн |
| 3+ | 228.28 грн |
| 5+ | 182.77 грн |
| 13+ | 172.81 грн |
| DSSK60-0045B |
|
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; 115W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Power dissipation: 115W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 0.65kA
Max. forward voltage: 0.44V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; 115W; TO247-3; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Power dissipation: 115W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 0.65kA
Max. forward voltage: 0.44V
товар відсутній
| MKE38RK600DFELB |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; SMPD; diode/transistor
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 0.19µC
Kind of channel: enhanced
Semiconductor structure: diode/transistor
Reverse recovery time: 50ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; SMPD; diode/transistor
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 0.19µC
Kind of channel: enhanced
Semiconductor structure: diode/transistor
Reverse recovery time: 50ns
товар відсутній
| DPG30I400HA |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 30A; tube; Ifsm: 360A; TO247-2; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 30A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-2
Max. forward voltage: 1.13V
Max. forward impulse current: 360A
Power dissipation: 160W
Technology: HiPerFRED™ 2nd Gen
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 30A; tube; Ifsm: 360A; TO247-2; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 30A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO247-2
Max. forward voltage: 1.13V
Max. forward impulse current: 360A
Power dissipation: 160W
Technology: HiPerFRED™ 2nd Gen
Kind of package: tube
на замовлення 54 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 236.65 грн |
| 3+ | 197.7 грн |
| 6+ | 149.34 грн |
| 15+ | 141.52 грн |
| LOC112 |
|
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; 3.75kV; DIP8; 1A
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 3.75kV
Case: DIP8
Trigger current: 1A
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; 3.75kV; DIP8; 1A
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Insulation voltage: 3.75kV
Case: DIP8
Trigger current: 1A
товар відсутній
| LOC112S |
|
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
на замовлення 39 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 143.98 грн |
| 5+ | 112.36 грн |
| 10+ | 82.49 грн |
| 28+ | 78.23 грн |
| LOC112STR |
|
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
товар відсутній
| MD16130S-DKM2MM |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 130A; package S
Max. off-state voltage: 1.6kV
Max. load current: 204A
Max. forward voltage: 1.5V
Load current: 130A
Semiconductor structure: common cathode; double
Max. forward impulse current: 3.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: package S
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 130A; package S
Max. off-state voltage: 1.6kV
Max. load current: 204A
Max. forward voltage: 1.5V
Load current: 130A
Semiconductor structure: common cathode; double
Max. forward impulse current: 3.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: package S
товар відсутній
| IXDI609CI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 801 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 199.12 грн |
| 3+ | 163.57 грн |
| 6+ | 150.77 грн |
| 10+ | 147.21 грн |
| 15+ | 142.23 грн |
| 50+ | 137.25 грн |
| IXDI614CI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 140ns
Turn-off time: 130ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -14...14A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 1115 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 317.83 грн |
| 3+ | 260.99 грн |
| 4+ | 233.97 грн |
| 10+ | 221.17 грн |
| 50+ | 218.32 грн |
| 250+ | 213.35 грн |
| IXDI630CI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
товар відсутній
| IXDI630MCI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 12.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 135ns
Turn-off time: 135ns
на замовлення 232 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 539.17 грн |
| 2+ | 413.18 грн |
| 6+ | 390.42 грн |
| 50+ | 375.49 грн |
| IXDN609CI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 1120 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 222.1 грн |
| 3+ | 184.9 грн |
| 6+ | 150.77 грн |
| 16+ | 142.23 грн |
| IXDN630CI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Number of channels: 1
Supply voltage: 12.5...35V
Output current: -30...30A
Kind of output: non-inverting
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; low-side
Turn-on time: 135ns
Turn-off time: 135ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Case: TO220-5
Mounting: THT
Kind of package: tube
Number of channels: 1
Supply voltage: 12.5...35V
Output current: -30...30A
Kind of output: non-inverting
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; low-side
Turn-on time: 135ns
Turn-off time: 135ns
на замовлення 215 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 609.62 грн |
| 2+ | 428.12 грн |
| 6+ | 405.36 грн |
| 10+ | 404.65 грн |
| IXDN630MCI |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 9...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 9÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Supply voltage: 9...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
на замовлення 173 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 511.59 грн |
| 2+ | 426.69 грн |
| 6+ | 403.94 грн |
| 10+ | 398.25 грн |
| 50+ | 389 грн |
| CPC1981Y |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 180mA; max.1kVAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 180mA
Switched voltage: max. 1kV AC
Relay variant: 1-phase
On-state resistance: 18Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 10ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 180mA; max.1kVAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 180mA
Switched voltage: max. 1kV AC
Relay variant: 1-phase
On-state resistance: 18Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 10ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 402.08 грн |
| 5+ | 178.5 грн |
| 13+ | 168.54 грн |
| CPC1983Y |
|
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 500mA; max.600VDC; THT; SIP4; -40÷85°C; 6Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.5A
Switched voltage: max. 600V DC
Relay variant: current source
On-state resistance: 6Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 2ms
Kind of output: MOSFET
Category: DC Solid State Relays
Description: Relay: solid state; 500mA; max.600VDC; THT; SIP4; -40÷85°C; 6Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.5A
Switched voltage: max. 600V DC
Relay variant: current source
On-state resistance: 6Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 2ms
Kind of output: MOSFET
на замовлення 96 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 527.68 грн |
| 4+ | 234.68 грн |
| 10+ | 221.88 грн |
| CPC1983YE |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 500mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 6Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 4kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 2ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 500mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.5A
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
On-state resistance: 6Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 4kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 2ms
Kind of output: MOSFET
на замовлення 97 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 531.51 грн |
| 4+ | 236.81 грн |
| 10+ | 224.01 грн |
| IXFR32N80P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
On-state resistance: 0.29Ω
Drain current: 20A
Drain-source voltage: 800V
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
On-state resistance: 0.29Ω
Drain current: 20A
Drain-source voltage: 800V
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Type of transistor: N-MOSFET
товар відсутній
| IXTH24P20 |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -24A; 300W; TO247-3; 250ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -24A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -24A; 300W; TO247-3; 250ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -24A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
товар відсутній