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MEO550-02DA IXYS L011.pdf Category: Diode modules
Description: Module: diode; single diode; 200V; If: 582A; Y4-M6; Ufmax: 1.08V
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 200V
Load current: 582A
Case: Y4-M6
Max. forward voltage: 1.08V
Max. forward impulse current: 4.8kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
IXFH74N20P IXFH74N20P IXYS IXF(V,H)74N20P(S).pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 74A; 480W; TO247-3
Mounting: THT
Gate charge: 107nC
Technology: HiPerFET™; PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO247-3
Reverse recovery time: 200ns
Drain-source voltage: 200V
Drain current: 74A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
на замовлення 157 шт:
термін постачання 21-30 дні (днів)
1+483.26 грн
3+ 315.04 грн
8+ 297.97 грн
IXTQ74N20P IXTQ74N20P IXYS IXTQ74N20P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 74A; 480W; TO3P
Mounting: THT
Gate charge: 107nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO3P
Reverse recovery time: 160ns
Drain-source voltage: 200V
Drain current: 74A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
товар відсутній
IXTT74N20P IXTT74N20P IXYS IXTQ74N20P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 74A; 480W; TO268
Mounting: SMD
Gate charge: 107nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO268
Reverse recovery time: 160ns
Drain-source voltage: 200V
Drain current: 74A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
товар відсутній
DHG100X1200NA DHG100X1200NA IXYS DHG100X1200NA.pdf Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 50Ax2; SOT227B; screw
Max. off-state voltage: 1.2kV
Semiconductor structure: double independent
Case: SOT227B
Type of module: diode
Technology: Sonic FRD™
Max. forward voltage: 2.97V
Load current: 50A x2
Max. forward impulse current: 0.5kA
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+2201.08 грн
2+ 1932.92 грн
DHG10C600PB DHG10C600PB IXYS DHG10C600PB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; tube; Ifsm: 40A; TO220AB; 40W
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.17V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Features of semiconductor devices: fast switching
Max. forward impulse current: 40A
Kind of package: tube
Reverse recovery time: 35ns
Power dissipation: 40W
Technology: Sonic FRD™
Heatsink thickness: 1.14...1.39mm
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
1+392.12 грн
3+ 328.55 грн
7+ 310.78 грн
10+ 310.06 грн
DHG10I1200PA DHG10I1200PA IXYS DHG10I1200PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 60A; TO220AC; 85W
Mounting: THT
Power dissipation: 85W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Heatsink thickness: 1.14...1.39mm
Features of semiconductor devices: fast switching
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.23V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 200ns
Max. forward impulse current: 60A
на замовлення 162 шт:
термін постачання 21-30 дні (днів)
4+99.56 грн
10+ 87.47 грн
26+ 83.21 грн
50+ 81.78 грн
Мінімальне замовлення: 4
DHG10I1200PM DHG10I1200PM IXYS DHG10I1200PM.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 65A; TO220FP-2; 30W
Mounting: THT
Power dissipation: 30W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Case: TO220FP-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.13V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 65A
товар відсутній
DHG10I1800PA DHG10I1800PA IXYS DHG10I1800PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 10A; tube; Ifsm: 60A; TO220AC; 85W
Mounting: THT
Power dissipation: 85W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Heatsink thickness: 1.14...1.39mm
Features of semiconductor devices: fast switching
Case: TO220AC
Max. off-state voltage: 1.8kV
Max. forward voltage: 2.33V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 300ns
Max. forward impulse current: 60A
товар відсутній
DHG10I600PA DHG10I600PA IXYS DHG10I600PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 80A; TO220AC; 70W; 35ns
Mounting: THT
Power dissipation: 70W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Heatsink thickness: 1.14...1.39mm
Features of semiconductor devices: fast switching
Case: TO220AC
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.18V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 80A
товар відсутній
DHG10I600PM DHG10I600PM IXYS DHG10I600PM.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 80A; TO220FP-2; 30W
Kind of package: tube
Semiconductor structure: single diode
Case: TO220FP-2
Type of diode: rectifying
Reverse recovery time: 35ns
Mounting: THT
Max. forward impulse current: 80A
Max. forward voltage: 2.18V
Power dissipation: 30W
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Load current: 10A
товар відсутній
DHG20C1200PB DHG20C1200PB IXYS DHG20C1200PB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10Ax2; tube; Ifsm: 60A; TO220AB; 85W
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Reverse recovery time: 200ns
Mounting: THT
Max. forward impulse current: 60A
Max. forward voltage: 2.23V
Power dissipation: 85W
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Max. off-state voltage: 1.2kV
Heatsink thickness: 1.14...1.39mm
Load current: 10A x2
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
2+209.85 грн
3+ 173.52 грн
6+ 147.21 грн
16+ 139.39 грн
Мінімальне замовлення: 2
DHG20C600QB DHG20C600QB IXYS DHG20C600QB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 80A; TO3P; 70W; 35ns
Mounting: THT
Power dissipation: 70W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Case: TO3P
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.17V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 80A
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
2+244.31 грн
3+ 204.1 грн
6+ 161.43 грн
Мінімальне замовлення: 2
DHG20I1200HA DHG20I1200HA IXYS DHG20I1200HA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 20A; tube; Ifsm: 150A; TO247-2; 140W
Mounting: THT
Power dissipation: 140W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Case: TO247-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.25V
Load current: 20A
Semiconductor structure: single diode
Reverse recovery time: 200ns
Max. forward impulse current: 150A
на замовлення 49 шт:
термін постачання 21-30 дні (днів)
2+225.16 грн
3+ 187.75 грн
5+ 187.03 грн
10+ 174.94 грн
30+ 171.39 грн
Мінімальне замовлення: 2
DHG20I1200PA DHG20I1200PA IXYS DHG20I1200PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 20A; tube; Ifsm: 150A; TO220AC; 140W
Mounting: THT
Power dissipation: 140W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Heatsink thickness: 1.14...1.39mm
Features of semiconductor devices: fast switching
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.25V
Load current: 20A
Semiconductor structure: single diode
Reverse recovery time: 200ns
Max. forward impulse current: 150A
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
2+210.61 грн
3+ 174.94 грн
6+ 138.68 грн
17+ 130.85 грн
Мінімальне замовлення: 2
DHG20I600PA DHG20I600PA IXYS DHG20I600PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 150A; TO220AC; 140W
Kind of package: tube
Semiconductor structure: single diode
Case: TO220AC
Type of diode: rectifying
Reverse recovery time: 40ns
Mounting: THT
Max. forward impulse current: 150A
Max. forward voltage: 2.21V
Power dissipation: 140W
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Heatsink thickness: 1.14...1.39mm
Load current: 20A
товар відсутній
DHG30I1200HA DHG30I1200HA IXYS DHG30I1200HA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 180W
Mounting: THT
Power dissipation: 180W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Case: TO247-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.95V
Load current: 30A
Semiconductor structure: single diode
Reverse recovery time: 200ns
Max. forward impulse current: 200A
на замовлення 90 шт:
термін постачання 21-30 дні (днів)
2+333.15 грн
3+ 278.06 грн
4+ 220.46 грн
11+ 208.37 грн
Мінімальне замовлення: 2
DHG30I600HA DHG30I600HA IXYS DHG30I600HA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; TO247-2; 180W
Mounting: THT
Power dissipation: 180W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Case: TO247-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.2V
Load current: 30A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 200A
товар відсутній
DHG30I600PA DHG30I600PA IXYS DHG30I600PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; TO220AC; 180W
Mounting: THT
Power dissipation: 180W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Heatsink thickness: 1.14...1.39mm
Features of semiconductor devices: fast switching
Case: TO220AC
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.24V
Load current: 30A
Semiconductor structure: single diode
Reverse recovery time: 40ns
Max. forward impulse current: 200A
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
1+549.89 грн
2+ 454.43 грн
5+ 429.54 грн
10+ 425.98 грн
DHG40C1200HB DHG40C1200HB IXYS DHG40C1200HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 20Ax2; tube; Ifsm: 150A; TO247-3; 140W
Mounting: THT
Power dissipation: 140W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.24V
Load current: 20A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 200ns
Max. forward impulse current: 150A
на замовлення 54 шт:
термін постачання 21-30 дні (днів)
2+368.38 грн
3+ 305.8 грн
8+ 289.44 грн
10+ 286.6 грн
30+ 280.2 грн
Мінімальне замовлення: 2
DHG40C600HB DHG40C600HB IXYS DHG40C600HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20Ax2; tube; Ifsm: 150A; TO247-3; 140W
Mounting: THT
Power dissipation: 140W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Case: TO247-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.19V
Load current: 20A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 40ns
Max. forward impulse current: 150A
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
2+336.21 грн
3+ 280.91 грн
4+ 222.59 грн
11+ 209.79 грн
Мінімальне замовлення: 2
DHG50X1200NA DHG50X1200NA IXYS DHG50X1200NA.pdf Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 25Ax2; SOT227B; screw
Max. off-state voltage: 1.2kV
Semiconductor structure: double independent
Case: SOT227B
Type of module: diode
Technology: Sonic FRD™
Max. forward voltage: 2.88V
Load current: 25A x2
Max. forward impulse current: 200A
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
1+1838.06 грн
2+ 1613.61 грн
DHG50X650NA DHG50X650NA IXYS DFE240X600NA.pdf Category: Diode modules
Description: Module: diode; double independent; 650V; If: 25Ax2; SOT227B; screw
Max. off-state voltage: 650V
Semiconductor structure: double independent
Case: SOT227B
Type of module: diode
Technology: Sonic FRD™
Max. forward voltage: 2.03V
Load current: 25A x2
Reverse recovery time: 35ns
Max. forward impulse current: 200A
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
DHG55I3300FE IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 3.3kV; 50A; tube; Ifsm: 600A; Ufmax: 3.4V
Kind of package: tube
Semiconductor structure: single diode
Case: ISOPLUS i4-pac™ x024e
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 600A
Max. forward voltage: 3.4V
Technology: Sonic FRD™
Max. off-state voltage: 3.3kV
Load current: 50A
товар відсутній
DHG5I600PA DHG5I600PA IXYS DHG5I600PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 40A; TO220AC; 40W; 35ns
Mounting: THT
Power dissipation: 40W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Heatsink thickness: 1.14...1.39mm
Features of semiconductor devices: fast switching
Case: TO220AC
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.17V
Load current: 5A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 40A
на замовлення 34 шт:
термін постачання 21-30 дні (днів)
2+269.58 грн
3+ 224.73 грн
5+ 177.79 грн
13+ 167.83 грн
Мінімальне замовлення: 2
DHG5I600PM DHG5I600PM IXYS DHG5I600PM.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 40A; TO220FP-2; 30W
Mounting: THT
Power dissipation: 30W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Case: TO220FP-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.17V
Load current: 5A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 40A
на замовлення 63 шт:
термін постачання 21-30 дні (днів)
2+273.41 грн
3+ 226.86 грн
5+ 179.92 грн
13+ 169.97 грн
Мінімальне замовлення: 2
DHG60C600HB DHG60C600HB IXYS DHG60C600HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 200A; TO247-3; 180W
Mounting: THT
Power dissipation: 180W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Case: TO247-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.21V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 40ns
Max. forward impulse current: 200A
товар відсутній
DHG60I1200HA DHG60I1200HA IXYS DHG60I1200HA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; TO247-2; 360W
Mounting: THT
Power dissipation: 360W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Case: TO247-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.34V
Load current: 60A
Semiconductor structure: single diode
Reverse recovery time: 200ns
Max. forward impulse current: 0.5kA
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
2+356.12 грн
3+ 295.84 грн
8+ 279.48 грн
10+ 277.35 грн
30+ 270.95 грн
Мінімальне замовлення: 2
DHG60I600HA DHG60I600HA IXYS DHG60I600HA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 430A; TO247-2; 415W
Mounting: THT
Power dissipation: 415W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Case: TO247-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.41V
Load current: 60A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 430A
товар відсутній
IXTP75N10P IXTP75N10P IXYS IXTA75N10P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO220AB
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
товар відсутній
MDD312-20N1 IXYS MDD312-20N1.pdf Category: Diode modules
Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2kV
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
Max. forward impulse current: 10.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
товар відсутній
MWI35-12A7 IXYS MWI35-12A7.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: NPT
Mechanical mounting: screw
Pulsed collector current: 70A
Application: motors
Gate-emitter voltage: ±20V
Collector current: 44A
Topology: IGBT three-phase bridge
товар відсутній
VUE35-12NO7 IXYS VUE35-12NO7.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 40A; Ifsm: 90A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 90A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.73V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
товар відсутній
VWO35-12ho7 IXYS VWO35-12HO7.pdf Category: Thyristor modules
Description: Module: thyristor; opposing x3; 1.2kV; 16A; ECO-PAC 1; Ufmax: 1.19V
Type of module: thyristor
Semiconductor structure: opposing x3
Max. off-state voltage: 1.2kV
Load current: 16A
Case: ECO-PAC 1
Max. forward voltage: 1.19V
Max. forward impulse current: 200A
Gate current: 25/50mA
Electrical mounting: THT
Leads: wire Ø 1.5mm
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MUBW35-12A8 IXYS MUBW35-12A8.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Power dissipation: 225W
Technology: NPT
Mechanical mounting: screw
товар відсутній
IXFN32N100P IXFN32N100P IXYS IXFN32N100P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 27A; SOT227B; screw; Idm: 75A; 690W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 27A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.32Ω
Pulsed drain current: 75A
Power dissipation: 690W
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 225nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
товар відсутній
IXFN32N100Q3 IXFN32N100Q3 IXYS IXFN32N100Q3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 28A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.32Ω
Pulsed drain current: 96A
Power dissipation: 780W
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate charge: 195nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
товар відсутній
IXFN32N120P IXFN32N120P IXYS IXFN32N120P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 32A; SOT227B; screw; Idm: 100A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Pulsed drain current: 100A
Power dissipation: 1kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.31Ω
Gate charge: 360nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
IXFN52N100X IXFN52N100X IXYS IXFN52N100X.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Pulsed drain current: 100A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.125Ω
Gate charge: 245nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 260ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
IXFN82N60Q3 IXFN82N60Q3 IXYS IXFN82N60Q3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 240A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 66A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 75mΩ
Pulsed drain current: 240A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate charge: 275nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
1+3473.94 грн
IXTN62N50L IXTN62N50L IXYS IXTN62N50L.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 62A
Pulsed drain current: 150A
Power dissipation: 800W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.1Ω
Gate charge: 550nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 0.5µs
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
IXFR140N30P IXFR140N30P IXYS IXFR140N30P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 300W; ISOPLUS247™
Mounting: THT
Polarisation: unipolar
Power dissipation: 300W
Type of transistor: N-MOSFET
On-state resistance: 28mΩ
Drain current: 70A
Drain-source voltage: 300V
Kind of package: tube
Gate charge: 185nC
Kind of channel: enhanced
Case: ISOPLUS247™
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
1+1265.2 грн
2+ 1110.83 грн
IXFX140N30P IXFX140N30P IXYS IXFK140N30P_IXFX140N30P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 140A; 1040W; PLUS247™
Mounting: THT
Polarisation: unipolar
Power dissipation: 1.04kW
Type of transistor: N-MOSFET
On-state resistance: 24mΩ
Drain current: 140A
Drain-source voltage: 300V
Kind of package: tube
Gate charge: 185nC
Kind of channel: enhanced
Case: PLUS247™
товар відсутній
IXTP3N50D2 IXTP3N50D2 IXYS IXTA(P)3N50D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 1.07µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 24ns
товар відсутній
DPF30I300PA DPF30I300PA IXYS DPF30I300PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 390A; TO220AC; 175W
Max. off-state voltage: 300V
Max. forward voltage: 1.17V
Load current: 30A
Semiconductor structure: single diode
Reverse recovery time: 55ns
Max. forward impulse current: 390A
Power dissipation: 175W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AC
на замовлення 88 шт:
термін постачання 21-30 дні (днів)
2+250.44 грн
3+ 210.5 грн
5+ 170.68 грн
14+ 161.43 грн
Мінімальне замовлення: 2
VUO86-16NO7 VUO86-16NO7 IXYS VUO86-16NO7.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 86A; Ifsm: 550A
Electrical mounting: THT
Mechanical mounting: screw
Max. forward impulse current: 0.55kA
Max. forward voltage: 1.51V
Version: module
Leads: wire Ø 1.5mm
Max. off-state voltage: 1.6kV
Load current: 86A
Case: ECO-PAC 1
Type of bridge rectifier: three-phase
товар відсутній
VVZ110-12IO7 IXYS VVZ110_VVZ175.pdf Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 110A; PWS-E
Version: module
Max. forward voltage: 1.75V
Load current: 110A
Gate current: 100/200mA
Max. forward impulse current: 1.35kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of bridge rectifier: half-controlled
Case: PWS-E
Leads: connectors 2,8x0,8mm; M6 screws
Max. off-state voltage: 1.2kV
товар відсутній
IXFR200N10P IXFR200N10P IXYS IXFR200N10P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; ISOPLUS247™
Mounting: THT
Case: ISOPLUS247™
Kind of package: tube
Polarisation: unipolar
On-state resistance: 9mΩ
Gate charge: 235nC
Kind of channel: enhanced
Drain current: 120A
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Power dissipation: 300W
товар відсутній
MCO50-12IO1 MCO50-12IO1 IXYS MCO50-12io1.pdf Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 57A; SOT227B; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.2kV
Load current: 57A
Case: SOT227B
Max. forward voltage: 1.53V
Gate current: 80/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MKI50-12F7 IXYS MKI50-12F7.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 350W
Power dissipation: 350W
Technology: HiPerFRED™; NPT
Mechanical mounting: screw
Pulsed collector current: 100A
Application: motors
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: transistor/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 45A
Topology: H-bridge
товар відсутній
MWI50-12A7 IXYS MWI50-12A7_MWI50-12A7T.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: NPT
Mechanical mounting: screw
товар відсутній
MWI50-12A7T IXYS MWI50-12A7_MWI50-12A7T.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 350W
Technology: NPT
Mechanical mounting: screw
товар відсутній
MWI50-12T7T IXYS MWI50-12T7T.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: E2-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 270W
Mechanical mounting: screw
товар відсутній
MCO75-12io1 MCO75-12io1 IXYS MCO75-12IO1.pdf Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 80A; SOT227B; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.2kV
Load current: 80A
Case: SOT227B
Max. forward voltage: 1.67V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MEA75-12DA MEA75-12DA IXYS MEA-MEK-MEE_75-12DA.PDF Category: Diode modules
Description: Module: diode; common anode; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Type of module: diode
Semiconductor structure: common anode
Max. off-state voltage: 1.2kV
Load current: 75A
Case: TO240AA
Max. forward voltage: 1.85V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
MEE75-12DA MEE75-12DA IXYS L343.pdf Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Max. off-state voltage: 1.2kV
Load current: 75A
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Max. forward voltage: 1.85V
Case: TO240AA
Mechanical mounting: screw
Semiconductor structure: double series
Type of module: diode
товар відсутній
MEK75-12DA MEK75-12DA IXYS Category: Diode modules
Description: Module: diode; common cathode; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Type of module: diode
Semiconductor structure: common cathode
Max. off-state voltage: 1.2kV
Load current: 75A
Case: TO240AA
Max. forward voltage: 1.85V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 38 шт:
термін постачання 21-30 дні (днів)
1+1861.81 грн
2+ 1634.95 грн
3+ 1634.24 грн
36+ 1607.92 грн
MWI75-12A8 IXYS MWI75-12A8.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Case: E3-Pack
Mechanical mounting: screw
Technology: NPT
Semiconductor structure: transistor/transistor
Application: motors
Power dissipation: 500W
Pulsed collector current: 150A
Type of module: IGBT
Gate-emitter voltage: ±20V
Collector current: 85A
Topology: IGBT three-phase bridge
товар відсутній
MWI75-12T7T IXYS MWI75-12T7T.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: motors; photovoltaics
Mechanical mounting: screw
Pulsed collector current: 100A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: transistor/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 75A
Topology: IGBT three-phase bridge; NTC thermistor
Power dissipation: 355W
товар відсутній
MWI75-12T8T IXYS MWI75-12T8T.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: motors; photovoltaics
Mechanical mounting: screw
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: transistor/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 75A
Topology: IGBT three-phase bridge; NTC thermistor
Power dissipation: 360W
товар відсутній
MEO550-02DA L011.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; single diode; 200V; If: 582A; Y4-M6; Ufmax: 1.08V
Type of module: diode
Semiconductor structure: single diode
Max. off-state voltage: 200V
Load current: 582A
Case: Y4-M6
Max. forward voltage: 1.08V
Max. forward impulse current: 4.8kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
IXFH74N20P IXF(V,H)74N20P(S).pdf
IXFH74N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 74A; 480W; TO247-3
Mounting: THT
Gate charge: 107nC
Technology: HiPerFET™; PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO247-3
Reverse recovery time: 200ns
Drain-source voltage: 200V
Drain current: 74A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
на замовлення 157 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+483.26 грн
3+ 315.04 грн
8+ 297.97 грн
IXTQ74N20P IXTQ74N20P-DTE.pdf
IXTQ74N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 74A; 480W; TO3P
Mounting: THT
Gate charge: 107nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO3P
Reverse recovery time: 160ns
Drain-source voltage: 200V
Drain current: 74A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
товар відсутній
IXTT74N20P IXTQ74N20P-DTE.pdf
IXTT74N20P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 74A; 480W; TO268
Mounting: SMD
Gate charge: 107nC
Technology: PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO268
Reverse recovery time: 160ns
Drain-source voltage: 200V
Drain current: 74A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Kind of package: tube
товар відсутній
DHG100X1200NA DHG100X1200NA.pdf
DHG100X1200NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 50Ax2; SOT227B; screw
Max. off-state voltage: 1.2kV
Semiconductor structure: double independent
Case: SOT227B
Type of module: diode
Technology: Sonic FRD™
Max. forward voltage: 2.97V
Load current: 50A x2
Max. forward impulse current: 0.5kA
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+2201.08 грн
2+ 1932.92 грн
DHG10C600PB DHG10C600PB.pdf
DHG10C600PB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; tube; Ifsm: 40A; TO220AB; 40W
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.17V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Features of semiconductor devices: fast switching
Max. forward impulse current: 40A
Kind of package: tube
Reverse recovery time: 35ns
Power dissipation: 40W
Technology: Sonic FRD™
Heatsink thickness: 1.14...1.39mm
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+392.12 грн
3+ 328.55 грн
7+ 310.78 грн
10+ 310.06 грн
DHG10I1200PA DHG10I1200PA.pdf
DHG10I1200PA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 60A; TO220AC; 85W
Mounting: THT
Power dissipation: 85W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Heatsink thickness: 1.14...1.39mm
Features of semiconductor devices: fast switching
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.23V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 200ns
Max. forward impulse current: 60A
на замовлення 162 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+99.56 грн
10+ 87.47 грн
26+ 83.21 грн
50+ 81.78 грн
Мінімальне замовлення: 4
DHG10I1200PM DHG10I1200PM.pdf
DHG10I1200PM
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 65A; TO220FP-2; 30W
Mounting: THT
Power dissipation: 30W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Case: TO220FP-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.13V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 65A
товар відсутній
DHG10I1800PA DHG10I1800PA.pdf
DHG10I1800PA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 10A; tube; Ifsm: 60A; TO220AC; 85W
Mounting: THT
Power dissipation: 85W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Heatsink thickness: 1.14...1.39mm
Features of semiconductor devices: fast switching
Case: TO220AC
Max. off-state voltage: 1.8kV
Max. forward voltage: 2.33V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 300ns
Max. forward impulse current: 60A
товар відсутній
DHG10I600PA DHG10I600PA.pdf
DHG10I600PA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 80A; TO220AC; 70W; 35ns
Mounting: THT
Power dissipation: 70W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Heatsink thickness: 1.14...1.39mm
Features of semiconductor devices: fast switching
Case: TO220AC
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.18V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 80A
товар відсутній
DHG10I600PM DHG10I600PM.pdf
DHG10I600PM
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 80A; TO220FP-2; 30W
Kind of package: tube
Semiconductor structure: single diode
Case: TO220FP-2
Type of diode: rectifying
Reverse recovery time: 35ns
Mounting: THT
Max. forward impulse current: 80A
Max. forward voltage: 2.18V
Power dissipation: 30W
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Load current: 10A
товар відсутній
DHG20C1200PB DHG20C1200PB.pdf
DHG20C1200PB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10Ax2; tube; Ifsm: 60A; TO220AB; 85W
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Reverse recovery time: 200ns
Mounting: THT
Max. forward impulse current: 60A
Max. forward voltage: 2.23V
Power dissipation: 85W
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Max. off-state voltage: 1.2kV
Heatsink thickness: 1.14...1.39mm
Load current: 10A x2
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+209.85 грн
3+ 173.52 грн
6+ 147.21 грн
16+ 139.39 грн
Мінімальне замовлення: 2
DHG20C600QB DHG20C600QB.pdf
DHG20C600QB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 80A; TO3P; 70W; 35ns
Mounting: THT
Power dissipation: 70W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Case: TO3P
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.17V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Max. forward impulse current: 80A
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+244.31 грн
3+ 204.1 грн
6+ 161.43 грн
Мінімальне замовлення: 2
DHG20I1200HA DHG20I1200HA.pdf
DHG20I1200HA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 20A; tube; Ifsm: 150A; TO247-2; 140W
Mounting: THT
Power dissipation: 140W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Case: TO247-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.25V
Load current: 20A
Semiconductor structure: single diode
Reverse recovery time: 200ns
Max. forward impulse current: 150A
на замовлення 49 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+225.16 грн
3+ 187.75 грн
5+ 187.03 грн
10+ 174.94 грн
30+ 171.39 грн
Мінімальне замовлення: 2
DHG20I1200PA DHG20I1200PA.pdf
DHG20I1200PA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 20A; tube; Ifsm: 150A; TO220AC; 140W
Mounting: THT
Power dissipation: 140W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Heatsink thickness: 1.14...1.39mm
Features of semiconductor devices: fast switching
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.25V
Load current: 20A
Semiconductor structure: single diode
Reverse recovery time: 200ns
Max. forward impulse current: 150A
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+210.61 грн
3+ 174.94 грн
6+ 138.68 грн
17+ 130.85 грн
Мінімальне замовлення: 2
DHG20I600PA DHG20I600PA.pdf
DHG20I600PA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20A; tube; Ifsm: 150A; TO220AC; 140W
Kind of package: tube
Semiconductor structure: single diode
Case: TO220AC
Type of diode: rectifying
Reverse recovery time: 40ns
Mounting: THT
Max. forward impulse current: 150A
Max. forward voltage: 2.21V
Power dissipation: 140W
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Heatsink thickness: 1.14...1.39mm
Load current: 20A
товар відсутній
DHG30I1200HA DHG30I1200HA.pdf
DHG30I1200HA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 180W
Mounting: THT
Power dissipation: 180W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Case: TO247-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.95V
Load current: 30A
Semiconductor structure: single diode
Reverse recovery time: 200ns
Max. forward impulse current: 200A
на замовлення 90 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+333.15 грн
3+ 278.06 грн
4+ 220.46 грн
11+ 208.37 грн
Мінімальне замовлення: 2
DHG30I600HA DHG30I600HA.pdf
DHG30I600HA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; TO247-2; 180W
Mounting: THT
Power dissipation: 180W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Case: TO247-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.2V
Load current: 30A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 200A
товар відсутній
DHG30I600PA DHG30I600PA.pdf
DHG30I600PA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; TO220AC; 180W
Mounting: THT
Power dissipation: 180W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Heatsink thickness: 1.14...1.39mm
Features of semiconductor devices: fast switching
Case: TO220AC
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.24V
Load current: 30A
Semiconductor structure: single diode
Reverse recovery time: 40ns
Max. forward impulse current: 200A
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+549.89 грн
2+ 454.43 грн
5+ 429.54 грн
10+ 425.98 грн
DHG40C1200HB DHG40C1200HB.pdf
DHG40C1200HB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 20Ax2; tube; Ifsm: 150A; TO247-3; 140W
Mounting: THT
Power dissipation: 140W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.24V
Load current: 20A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 200ns
Max. forward impulse current: 150A
на замовлення 54 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+368.38 грн
3+ 305.8 грн
8+ 289.44 грн
10+ 286.6 грн
30+ 280.2 грн
Мінімальне замовлення: 2
DHG40C600HB DHG40C600HB.pdf
DHG40C600HB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 20Ax2; tube; Ifsm: 150A; TO247-3; 140W
Mounting: THT
Power dissipation: 140W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Case: TO247-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.19V
Load current: 20A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 40ns
Max. forward impulse current: 150A
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+336.21 грн
3+ 280.91 грн
4+ 222.59 грн
11+ 209.79 грн
Мінімальне замовлення: 2
DHG50X1200NA DHG50X1200NA.pdf
DHG50X1200NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 25Ax2; SOT227B; screw
Max. off-state voltage: 1.2kV
Semiconductor structure: double independent
Case: SOT227B
Type of module: diode
Technology: Sonic FRD™
Max. forward voltage: 2.88V
Load current: 25A x2
Max. forward impulse current: 200A
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1838.06 грн
2+ 1613.61 грн
DHG50X650NA DFE240X600NA.pdf
DHG50X650NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 25Ax2; SOT227B; screw
Max. off-state voltage: 650V
Semiconductor structure: double independent
Case: SOT227B
Type of module: diode
Technology: Sonic FRD™
Max. forward voltage: 2.03V
Load current: 25A x2
Reverse recovery time: 35ns
Max. forward impulse current: 200A
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
DHG55I3300FE
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 3.3kV; 50A; tube; Ifsm: 600A; Ufmax: 3.4V
Kind of package: tube
Semiconductor structure: single diode
Case: ISOPLUS i4-pac™ x024e
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 600A
Max. forward voltage: 3.4V
Technology: Sonic FRD™
Max. off-state voltage: 3.3kV
Load current: 50A
товар відсутній
DHG5I600PA DHG5I600PA.pdf
DHG5I600PA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 40A; TO220AC; 40W; 35ns
Mounting: THT
Power dissipation: 40W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Heatsink thickness: 1.14...1.39mm
Features of semiconductor devices: fast switching
Case: TO220AC
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.17V
Load current: 5A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 40A
на замовлення 34 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+269.58 грн
3+ 224.73 грн
5+ 177.79 грн
13+ 167.83 грн
Мінімальне замовлення: 2
DHG5I600PM DHG5I600PM.pdf
DHG5I600PM
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 40A; TO220FP-2; 30W
Mounting: THT
Power dissipation: 30W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Case: TO220FP-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.17V
Load current: 5A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 40A
на замовлення 63 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+273.41 грн
3+ 226.86 грн
5+ 179.92 грн
13+ 169.97 грн
Мінімальне замовлення: 2
DHG60C600HB DHG60C600HB.pdf
DHG60C600HB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 200A; TO247-3; 180W
Mounting: THT
Power dissipation: 180W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Case: TO247-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.21V
Load current: 30A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 40ns
Max. forward impulse current: 200A
товар відсутній
DHG60I1200HA DHG60I1200HA.pdf
DHG60I1200HA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; tube; Ifsm: 500A; TO247-2; 360W
Mounting: THT
Power dissipation: 360W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Case: TO247-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.34V
Load current: 60A
Semiconductor structure: single diode
Reverse recovery time: 200ns
Max. forward impulse current: 0.5kA
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+356.12 грн
3+ 295.84 грн
8+ 279.48 грн
10+ 277.35 грн
30+ 270.95 грн
Мінімальне замовлення: 2
DHG60I600HA DHG60I600HA.pdf
DHG60I600HA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 430A; TO247-2; 415W
Mounting: THT
Power dissipation: 415W
Kind of package: tube
Type of diode: rectifying
Technology: Sonic FRD™
Features of semiconductor devices: fast switching
Case: TO247-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.41V
Load current: 60A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 430A
товар відсутній
IXTP75N10P IXTA75N10P-DTE.pdf
IXTP75N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 75A; 360W; TO220AB
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 120ns
товар відсутній
MDD312-20N1 MDD312-20N1.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2kV
Max. forward voltage: 1.03V
Load current: 310A
Semiconductor structure: double series
Max. forward impulse current: 10.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
товар відсутній
MWI35-12A7 MWI35-12A7.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: E2-Pack
Electrical mounting: Press-in PCB
Technology: NPT
Mechanical mounting: screw
Pulsed collector current: 70A
Application: motors
Gate-emitter voltage: ±20V
Collector current: 44A
Topology: IGBT three-phase bridge
товар відсутній
VUE35-12NO7 VUE35-12NO7.pdf
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 40A; Ifsm: 90A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 90A
Electrical mounting: THT
Version: module
Max. forward voltage: 2.73V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
Technology: FRED
товар відсутній
VWO35-12ho7 VWO35-12HO7.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; opposing x3; 1.2kV; 16A; ECO-PAC 1; Ufmax: 1.19V
Type of module: thyristor
Semiconductor structure: opposing x3
Max. off-state voltage: 1.2kV
Load current: 16A
Case: ECO-PAC 1
Max. forward voltage: 1.19V
Max. forward impulse current: 200A
Gate current: 25/50mA
Electrical mounting: THT
Leads: wire Ø 1.5mm
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MUBW35-12A8 MUBW35-12A8.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: E3-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Power dissipation: 225W
Technology: NPT
Mechanical mounting: screw
товар відсутній
IXFN32N100P IXFN32N100P.pdf
IXFN32N100P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 27A; SOT227B; screw; Idm: 75A; 690W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 27A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.32Ω
Pulsed drain current: 75A
Power dissipation: 690W
Technology: HiPerFET™; Polar™
Kind of channel: enhanced
Gate charge: 225nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
товар відсутній
IXFN32N100Q3 IXFN32N100Q3.pdf
IXFN32N100Q3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 28A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.32Ω
Pulsed drain current: 96A
Power dissipation: 780W
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate charge: 195nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
товар відсутній
IXFN32N120P IXFN32N120P.pdf
IXFN32N120P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 32A; SOT227B; screw; Idm: 100A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 32A
Pulsed drain current: 100A
Power dissipation: 1kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.31Ω
Gate charge: 360nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
IXFN52N100X IXFN52N100X.pdf
IXFN52N100X
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Pulsed drain current: 100A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.125Ω
Gate charge: 245nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 260ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
IXFN82N60Q3 IXFN82N60Q3.pdf
IXFN82N60Q3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 240A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 66A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 75mΩ
Pulsed drain current: 240A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Kind of channel: enhanced
Gate charge: 275nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+3473.94 грн
IXTN62N50L IXTN62N50L.pdf
IXTN62N50L
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 62A; SOT227B; screw; Idm: 150A
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 62A
Pulsed drain current: 150A
Power dissipation: 800W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.1Ω
Gate charge: 550nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 0.5µs
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
IXFR140N30P IXFR140N30P.pdf
IXFR140N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 300W; ISOPLUS247™
Mounting: THT
Polarisation: unipolar
Power dissipation: 300W
Type of transistor: N-MOSFET
On-state resistance: 28mΩ
Drain current: 70A
Drain-source voltage: 300V
Kind of package: tube
Gate charge: 185nC
Kind of channel: enhanced
Case: ISOPLUS247™
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1265.2 грн
2+ 1110.83 грн
IXFX140N30P IXFK140N30P_IXFX140N30P.pdf
IXFX140N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 140A; 1040W; PLUS247™
Mounting: THT
Polarisation: unipolar
Power dissipation: 1.04kW
Type of transistor: N-MOSFET
On-state resistance: 24mΩ
Drain current: 140A
Drain-source voltage: 300V
Kind of package: tube
Gate charge: 185nC
Kind of channel: enhanced
Case: PLUS247™
товар відсутній
IXTP3N50D2 IXTA(P)3N50D2.pdf
IXTP3N50D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 1.07µC
Kind of package: tube
Kind of channel: depleted
Reverse recovery time: 24ns
товар відсутній
DPF30I300PA DPF30I300PA.pdf
DPF30I300PA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 390A; TO220AC; 175W
Max. off-state voltage: 300V
Max. forward voltage: 1.17V
Load current: 30A
Semiconductor structure: single diode
Reverse recovery time: 55ns
Max. forward impulse current: 390A
Power dissipation: 175W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
Mounting: THT
Case: TO220AC
на замовлення 88 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+250.44 грн
3+ 210.5 грн
5+ 170.68 грн
14+ 161.43 грн
Мінімальне замовлення: 2
VUO86-16NO7 VUO86-16NO7.pdf
VUO86-16NO7
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 86A; Ifsm: 550A
Electrical mounting: THT
Mechanical mounting: screw
Max. forward impulse current: 0.55kA
Max. forward voltage: 1.51V
Version: module
Leads: wire Ø 1.5mm
Max. off-state voltage: 1.6kV
Load current: 86A
Case: ECO-PAC 1
Type of bridge rectifier: three-phase
товар відсутній
VVZ110-12IO7 VVZ110_VVZ175.pdf
Виробник: IXYS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 110A; PWS-E
Version: module
Max. forward voltage: 1.75V
Load current: 110A
Gate current: 100/200mA
Max. forward impulse current: 1.35kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of bridge rectifier: half-controlled
Case: PWS-E
Leads: connectors 2,8x0,8mm; M6 screws
Max. off-state voltage: 1.2kV
товар відсутній
IXFR200N10P IXFR200N10P.pdf
IXFR200N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; ISOPLUS247™
Mounting: THT
Case: ISOPLUS247™
Kind of package: tube
Polarisation: unipolar
On-state resistance: 9mΩ
Gate charge: 235nC
Kind of channel: enhanced
Drain current: 120A
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Power dissipation: 300W
товар відсутній
MCO50-12IO1 MCO50-12io1.pdf
MCO50-12IO1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 57A; SOT227B; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.2kV
Load current: 57A
Case: SOT227B
Max. forward voltage: 1.53V
Gate current: 80/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MKI50-12F7 MKI50-12F7.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 350W
Power dissipation: 350W
Technology: HiPerFRED™; NPT
Mechanical mounting: screw
Pulsed collector current: 100A
Application: motors
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: transistor/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 45A
Topology: H-bridge
товар відсутній
MWI50-12A7 MWI50-12A7_MWI50-12A7T.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: NPT
Mechanical mounting: screw
товар відсутній
MWI50-12A7T MWI50-12A7_MWI50-12A7T.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 350W
Technology: NPT
Mechanical mounting: screw
товар відсутній
MWI50-12T7T MWI50-12T7T.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: E2-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 270W
Mechanical mounting: screw
товар відсутній
MCO75-12io1 MCO75-12IO1.pdf
MCO75-12io1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.2kV; 80A; SOT227B; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.2kV
Load current: 80A
Case: SOT227B
Max. forward voltage: 1.67V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товар відсутній
MEA75-12DA MEA-MEK-MEE_75-12DA.PDF
MEA75-12DA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common anode; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Type of module: diode
Semiconductor structure: common anode
Max. off-state voltage: 1.2kV
Load current: 75A
Case: TO240AA
Max. forward voltage: 1.85V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
товар відсутній
MEE75-12DA L343.pdf
MEE75-12DA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Max. off-state voltage: 1.2kV
Load current: 75A
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Max. forward voltage: 1.85V
Case: TO240AA
Mechanical mounting: screw
Semiconductor structure: double series
Type of module: diode
товар відсутній
MEK75-12DA
MEK75-12DA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Type of module: diode
Semiconductor structure: common cathode
Max. off-state voltage: 1.2kV
Load current: 75A
Case: TO240AA
Max. forward voltage: 1.85V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 38 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+1861.81 грн
2+ 1634.95 грн
3+ 1634.24 грн
36+ 1607.92 грн
MWI75-12A8 MWI75-12A8.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Case: E3-Pack
Mechanical mounting: screw
Technology: NPT
Semiconductor structure: transistor/transistor
Application: motors
Power dissipation: 500W
Pulsed collector current: 150A
Type of module: IGBT
Gate-emitter voltage: ±20V
Collector current: 85A
Topology: IGBT three-phase bridge
товар відсутній
MWI75-12T7T MWI75-12T7T.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: motors; photovoltaics
Mechanical mounting: screw
Pulsed collector current: 100A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: transistor/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 75A
Topology: IGBT three-phase bridge; NTC thermistor
Power dissipation: 355W
товар відсутній
MWI75-12T8T MWI75-12T8T.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: motors; photovoltaics
Mechanical mounting: screw
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: transistor/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 75A
Topology: IGBT three-phase bridge; NTC thermistor
Power dissipation: 360W
товар відсутній
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