| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| FSB50550AS | ONSEMI |
Category: Motor and PWM driversDescription: IC: driver; Gull wing,PowerSMD; 2A; 500V; MOSFET; 15kHz; Usup: 300V Supply voltage: 300V Output voltage: 500V Frequency: 15kHz Type of integrated circuit: driver Case: Gull wing; PowerSMD Integrated circuit features: MOSFET Mounting: SMD Operating temperature: -40...125°C Output current: 2A |
на замовлення 17550 шт: термін постачання 21-30 дні (днів) |
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| SMF05CT2G | ONSEMI |
Category: Diodes - UnclassifiedDescription: SMF05CT2G |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| NSVRB751S40T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 0.5A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FCB125N65S3 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 60A Power dissipation: 181W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTPF125N65S3H | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 37W; TO220FP Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate charge: 44nC On-state resistance: 0.125Ω Gate-source voltage: ±30V Drain current: 24A Power dissipation: 37W Pulsed drain current: 67A Drain-source voltage: 650V Case: TO220FP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FCMT125N65S3 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 60A Power dissipation: 181W Case: PQFN4 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NUP1301ML3T1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; double series; SOT23; reel,tape; ESD Type of diode: TVS array Semiconductor structure: double series Mounting: SMD Case: SOT23 Max. off-state voltage: 70V Kind of package: reel; tape Version: ESD |
на замовлення 2855 шт: термін постачання 21-30 дні (днів) |
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NC7S32M5X | ONSEMI |
Category: Gates, invertersDescription: IC: digital; OR; Ch: 1; IN: 2; SMD; SC70-5; 2÷6VDC; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of gate: OR Number of channels: single; 1 Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Number of inputs: 2 Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 10µA |
на замовлення 1950 шт: термін постачання 21-30 дні (днів) |
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NL17SG32DFT2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC88A; MiniGate; -55÷125°C Type of integrated circuit: digital Kind of gate: OR Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SC88A Supply voltage: 0.9...3.6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: NL Manufacturer series: MiniGate |
на замовлення 2987 шт: термін постачання 21-30 дні (днів) |
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NC7SZ332P6X | ONSEMI |
Category: Gates, invertersDescription: IC: digital; OR; Ch: 1; IN: 3; SMD; SC70-6; 1.65÷5.5VDC; -40÷85°C; 20uA Type of integrated circuit: digital Kind of gate: OR Number of channels: single; 1 Number of inputs: 3 Mounting: SMD Case: SC70-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 20µA |
на замовлення 1945 шт: термін постачання 21-30 дні (днів) |
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NTMFS5C670NLT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 440A Power dissipation: 1.8W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 8.8mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 157 шт: термін постачання 21-30 дні (днів) |
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NTP165N65S3H | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 53A; 142W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: TO220-3 On-state resistance: 0.165Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 53A Gate-source voltage: ±30V Gate charge: 35nC Drain current: 19A Power dissipation: 142W |
на замовлення 88 шт: термін постачання 21-30 дні (днів) |
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| FDMS007N08LC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 53A Pulsed drain current: 345A Power dissipation: 92.6W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 11.6mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NUP4301MR6T1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: diode arrays; SC74; Ch: 4; reel,tape; ESD Type of diode: diode arrays Case: SC74 Mounting: SMD Max. off-state voltage: 70V Kind of package: reel; tape Number of channels: 4 Version: ESD |
на замовлення 2750 шт: термін постачання 21-30 дні (днів) |
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PACDN042Y3R | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; SOT23; Ch: 2; reel,tape; ESD Type of diode: TVS array Mounting: SMD Case: SOT23 Max. off-state voltage: 5.5V Kind of package: reel; tape Version: ESD Number of channels: 2 |
на замовлення 2172 шт: термін постачання 21-30 дні (днів) |
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NTZD3152PT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -20V; -0.43A; 0.25W; SOT563 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.43A Power dissipation: 0.25W Case: SOT563 Gate-source voltage: ±6V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.7nC |
на замовлення 1830 шт: термін постачання 21-30 дні (днів) |
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| NTMTS1D2N08H | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 335A; Idm: 900A; 150W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 150W Case: DFNW8 Mounting: SMD Kind of package: reel; tape Gate charge: 147nC On-state resistance: 1.1mΩ Drain-source voltage: 80V Drain current: 335A Pulsed drain current: 900A Gate-source voltage: ±20V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTMTS1D5N08H | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 255A; Idm: 900A; 83W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 83W Case: DFNW8 Mounting: SMD Kind of package: reel; tape Gate charge: 125nC On-state resistance: 1.5mΩ Drain-source voltage: 80V Drain current: 255A Pulsed drain current: 900A Gate-source voltage: ±20V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTMTS1D6N10MCTXG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 146W Case: DFNW8 Mounting: SMD Kind of package: reel; tape Gate charge: 106nC On-state resistance: 1.7mΩ Drain-source voltage: 100V Drain current: 273A Pulsed drain current: 900A Gate-source voltage: ±20V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FDMA7672 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 24A; 2.4W; MicroFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9A Pulsed drain current: 24A Power dissipation: 2.4W Case: MicroFET Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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RFD12N06RLESM9A | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Power dissipation: 49W Case: DPAK Gate-source voltage: ±16V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 15nC Technology: UltraFET® |
на замовлення 1440 шт: термін постачання 21-30 дні (днів) |
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sm05t1g | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.7V; 17A; 300W; double,common anode; SOT23; Ch: 2 Type of diode: TVS array Breakdown voltage: 6.7V Peak pulse power dissipation: 0.3kW Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 5V Number of channels: 2 Kind of package: reel; tape Application: general purpose Leakage current: 10µA Version: ESD Max. forward impulse current: 17A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| SZSM05T1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.2÷7.3V; 300W; double,common anode; SOT23; Ch: 2 Type of diode: TVS array Breakdown voltage: 6.2...7.3V Peak pulse power dissipation: 0.3kW Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 5V Number of channels: 2 Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDP22N50N | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 13.2A Power dissipation: 312.5W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhancement |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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| MURF860G | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 8A; tube; TO220FP-2; 60ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Kind of package: tube Case: TO220FP-2 Reverse recovery time: 60ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ADT7461ARMZ-R7 | ONSEMI |
Category: Temperature transducersDescription: IC: temperature sensor; local,remote; MSOP8; SMD; Uoper: 3÷5.5V Type of integrated circuit: temperature sensor Case: MSOP8 Mounting: SMD Supply voltage: 3...5.5V Integrated circuit features: programmable Kind of temperature sensor: local; remote DC supply current: 215µA Operating voltage: 3...5.5V |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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NCP1342AMDCCDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; SO8; flyback; 9÷28VDC Type of integrated circuit: PMIC Output current: -500...800mA Mounting: SMD Case: SO8 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 9...28V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FGH75T65SQD-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 128nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FGH75T65SHD-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 227W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 227W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 123nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FGH75T65SQDT-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 128nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FGH75T65SHDT-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 227W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 227W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 123nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTP095N65S3H | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 84A Power dissipation: 208W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTP095N65S3HF | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 36A Pulsed drain current: 90A Power dissipation: 272W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: THT Gate charge: 66nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP705MT30TCG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3V; 500mA; WDFN6; SMD Operating temperature: -40...125°C Case: WDFN6 Mounting: SMD Type of integrated circuit: voltage regulator Voltage drop: 0.35V Output current: 0.5A Number of channels: 1 Tolerance: ±2% Input voltage: 2.5...5.5V Output voltage: 3V Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP705 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC14521BDG | ONSEMI |
Category: Counters/dividersDescription: IC: digital; 24-stage,frequency divider; Ch: 1; IN: 5; CMOS; SMD Number of channels: 1 Supply voltage: 3...18V DC Case: SOIC16 Kind of package: tube Mounting: SMD Operating temperature: -55...125°C Number of inputs: 5 Kind of integrated circuit: 24-stage; frequency divider Technology: CMOS Type of integrated circuit: digital |
на замовлення 51 шт: термін постачання 21-30 дні (днів) |
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MC14532BDG | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 8bit,priority encoder; Ch: 1; IN: 9; CMOS; SMD; SOIC16 Operating temperature: -55...125°C Mounting: SMD Kind of package: tube Number of channels: 1 Supply voltage: 3...18V DC Number of inputs: 9 Kind of integrated circuit: 8bit; priority encoder Technology: CMOS Type of integrated circuit: digital Case: SOIC16 |
на замовлення 101 шт: термін постачання 21-30 дні (днів) |
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MC14526BDWG | ONSEMI |
Category: Counters/dividersDescription: IC: digital; 4bit,binary counter,down counter; Ch: 1; IN: 5; CMOS Operating temperature: -55...125°C Mounting: SMD Kind of package: reel; tape Number of channels: 1 Supply voltage: 3...18V DC Number of inputs: 5 Kind of integrated circuit: 4bit; binary counter; down counter Case: SO16WB Type of integrated circuit: digital Technology: CMOS |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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MC14528BDG | ONSEMI |
Category: MultivibratorsDescription: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 3÷18VDC Operating temperature: -55...125°C Kind of package: tube Mounting: SMD Number of inputs: 3 Supply voltage: 3...18V DC Kind of integrated circuit: monostable; multivibrator Type of integrated circuit: digital Technology: CMOS Case: SOIC16 Number of channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC848BLT3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NCP1076P065G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 6.3÷10VDC Type of integrated circuit: PMIC Case: DIP7 Mounting: SMD Topology: flyback Operating temperature: -40...125°C Output current: 0.65A Number of channels: 1 Operating voltage: 6.3...10V DC On-state resistance: 6.9Ω Frequency: 59...71kHz Kind of integrated circuit: AC/DC switcher; PWM controller |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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ES3D | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Reverse recovery time: 30ns Semiconductor structure: single diode Capacitance: 45pF Case: SMC Max. forward voltage: 0.95V Max. forward impulse current: 100A Features of semiconductor devices: fast switching Power dissipation: 1.66W Kind of package: reel; tape |
на замовлення 2942 шт: термін постачання 21-30 дні (днів) |
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74VHC123AMTCX | ONSEMI |
Category: MultivibratorsDescription: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Supply voltage: 2...5.5V DC Mounting: SMD Case: TSSOP16 Manufacturer series: VHC Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74VHC123AM | ONSEMI |
Category: MultivibratorsDescription: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16 Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Supply voltage: 2...5.5V DC Mounting: SMD Case: SO16 Manufacturer series: VHC Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74VHC123AMTC | ONSEMI |
Category: MultivibratorsDescription: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Supply voltage: 2...5.5V DC Mounting: SMD Case: TSSOP16 Kind of package: tube Manufacturer series: VHC Operating temperature: -40...85°C Quiescent current: 40µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74VHC123AMX | ONSEMI |
Category: MultivibratorsDescription: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16 Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Supply voltage: 2...5.5V DC Mounting: SMD Case: SO16 Manufacturer series: VHC Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCP3065DR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter,LED driver; Uin: 3÷40VDC; 1.5A; SO8; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter; LED driver Case: SO8 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Output current: 1.5A Number of channels: 1 Input voltage: 3...40V DC Operating voltage: 3...40V DC Frequency: 110...190kHz Topology: boost; buck; buck-boost |
на замовлення 1993 шт: термін постачання 21-30 дні (днів) |
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MC14512BDR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; data selector; Ch: 8; TTL; SMD; SO16; 3÷18VDC; -40÷85°C Operating temperature: -40...85°C Kind of package: reel; tape Mounting: SMD Supply voltage: 3...18V DC Kind of integrated circuit: data selector Type of integrated circuit: digital Technology: TTL Case: SO16 Number of channels: 8 |
на замовлення 2496 шт: термін постачання 21-30 дні (днів) |
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MBRS2040LT3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape Max. off-state voltage: 40V Load current: 2A Case: SMB Max. forward voltage: 0.45V Mounting: SMD Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Schottky rectifying Max. load current: 4A |
на замовлення 3609 шт: термін постачання 21-30 дні (днів) |
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| NRVB5100MFST1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5; SMD; 100V; 5A; reel,tape Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.98V Load current: 5A Max. load current: 10A Max. forward impulse current: 75A Max. off-state voltage: 100V Kind of package: reel; tape Application: automotive industry Case: DFN5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MJ11032G | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 120V; 30A; 300W; TO3 Kind of package: in-tray Polarisation: bipolar Kind of transistor: Darlington Case: TO3 Mounting: THT Type of transistor: NPN Power dissipation: 300W Collector current: 30A Collector-emitter voltage: 120V |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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MC14543BDG | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; BCD to 7-segment,decoder,display driver; Ch: 1; IN: 4 Kind of integrated circuit: BCD to 7-segment; decoder; display driver Technology: CMOS Type of integrated circuit: digital Case: SO16 Mounting: SMD Number of channels: 1 Number of inputs: 4 |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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NTR5198NLT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Case: SOT23 On-state resistance: 155mΩ Power dissipation: 0.6W Drain current: 1.6A Gate-source voltage: ±20V Drain-source voltage: 60V Polarisation: unipolar |
на замовлення 594 шт: термін постачання 21-30 дні (днів) |
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NVR5198NLT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Case: SOT23 Gate charge: 5.1nC On-state resistance: 0.205Ω Power dissipation: 0.4W Drain current: 1.2A Gate-source voltage: ±20V Pulsed drain current: 27A Drain-source voltage: 60V Polarisation: unipolar Application: automotive industry |
на замовлення 1683 шт: термін постачання 21-30 дні (днів) |
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BVSS138LT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTR4171PT1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.5A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 7.4nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3003 шт: термін постачання 21-30 дні (днів) |
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NTR0202PLT1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -0.4A; 0.225W; SOT23 Mounting: SMD Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.4A Gate charge: 2.18nC Power dissipation: 0.225W On-state resistance: 0.55Ω Gate-source voltage: ±20V Case: SOT23 Kind of package: reel; tape |
на замовлення 2988 шт: термін постачання 21-30 дні (днів) |
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| FOD8802A | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 75V; SO8 Case: SO8 Mounting: SMD Max. off-state voltage: 6V Collector-emitter voltage: 75V Insulation voltage: 2.5kV Slew rate: 10kV/μs Manufacturer series: FOD8802 Type of optocoupler: optocoupler Kind of output: transistor Turn-on time: 6µs Turn-off time: 40µs Number of channels: 2 CTR@If: 35-230%@1mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MICROFC-SMA-30020-GEVB | ONSEMI |
Category: UnclassifiedDescription: MICROFC-SMA-30020-GEVB |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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| FDMS7698 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 50A; 29W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 22A Pulsed drain current: 50A Power dissipation: 29W Case: Power56 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP133AMX090TCG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 0.9V; 500mA; XDFN6; SMD Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP133 Case: XDFN6 Type of integrated circuit: voltage regulator Operating temperature: -40...85°C Output current: 0.5A Voltage drop: 0.25V Output voltage: 0.9V Input voltage: 0.8...5.5V Number of channels: 1 Tolerance: ±1.5% |
товару немає в наявності |
В кошику од. на суму грн. |
| FSB50550AS |
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Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; Gull wing,PowerSMD; 2A; 500V; MOSFET; 15kHz; Usup: 300V
Supply voltage: 300V
Output voltage: 500V
Frequency: 15kHz
Type of integrated circuit: driver
Case: Gull wing; PowerSMD
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Output current: 2A
Category: Motor and PWM drivers
Description: IC: driver; Gull wing,PowerSMD; 2A; 500V; MOSFET; 15kHz; Usup: 300V
Supply voltage: 300V
Output voltage: 500V
Frequency: 15kHz
Type of integrated circuit: driver
Case: Gull wing; PowerSMD
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Output current: 2A
на замовлення 17550 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 450+ | 458.09 грн |
| SMF05CT2G |
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на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.66 грн |
| NSVRB751S40T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| FCB125N65S3 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| NTPF125N65S3H |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 37W; TO220FP
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 44nC
On-state resistance: 0.125Ω
Gate-source voltage: ±30V
Drain current: 24A
Power dissipation: 37W
Pulsed drain current: 67A
Drain-source voltage: 650V
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 37W; TO220FP
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 44nC
On-state resistance: 0.125Ω
Gate-source voltage: ±30V
Drain current: 24A
Power dissipation: 37W
Pulsed drain current: 67A
Drain-source voltage: 650V
Case: TO220FP
товару немає в наявності
В кошику
од. на суму грн.
| FCMT125N65S3 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| NUP1301ML3T1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; double series; SOT23; reel,tape; ESD
Type of diode: TVS array
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Max. off-state voltage: 70V
Kind of package: reel; tape
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; double series; SOT23; reel,tape; ESD
Type of diode: TVS array
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Max. off-state voltage: 70V
Kind of package: reel; tape
Version: ESD
на замовлення 2855 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 20.51 грн |
| 32+ | 12.70 грн |
| 45+ | 8.97 грн |
| 73+ | 5.48 грн |
| NC7S32M5X |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC70-5; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Number of inputs: 2
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 10µA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC70-5; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Number of inputs: 2
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 10µA
на замовлення 1950 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.84 грн |
| 74+ | 5.40 грн |
| 82+ | 4.84 грн |
| 99+ | 4.03 грн |
| 128+ | 3.11 грн |
| 250+ | 2.74 грн |
| 500+ | 2.53 грн |
| 1000+ | 2.39 грн |
| NL17SG32DFT2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC88A; MiniGate; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 0.9...3.6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: NL
Manufacturer series: MiniGate
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC88A; MiniGate; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 0.9...3.6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: NL
Manufacturer series: MiniGate
на замовлення 2987 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 20.51 грн |
| 36+ | 11.11 грн |
| 45+ | 8.95 грн |
| 52+ | 7.68 грн |
| 100+ | 6.54 грн |
| 241+ | 3.87 грн |
| 661+ | 3.67 грн |
| NC7SZ332P6X |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 3; SMD; SC70-6; 1.65÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 3
Mounting: SMD
Case: SC70-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 3; SMD; SC70-6; 1.65÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 3
Mounting: SMD
Case: SC70-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
на замовлення 1945 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.22 грн |
| 34+ | 11.98 грн |
| 42+ | 9.60 грн |
| 100+ | 6.90 грн |
| 169+ | 5.48 грн |
| 466+ | 5.16 грн |
| NTMFS5C670NLT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 440A
Power dissipation: 1.8W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 440A
Power dissipation: 1.8W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 157 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 189.73 грн |
| 5+ | 111.90 грн |
| 11+ | 85.71 грн |
| 30+ | 80.95 грн |
| NTP165N65S3H |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 53A; 142W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220-3
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 53A
Gate-source voltage: ±30V
Gate charge: 35nC
Drain current: 19A
Power dissipation: 142W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 53A; 142W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO220-3
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 53A
Gate-source voltage: ±30V
Gate charge: 35nC
Drain current: 19A
Power dissipation: 142W
на замовлення 88 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 199.19 грн |
| 10+ | 187.29 грн |
| FDMS007N08LC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 53A
Pulsed drain current: 345A
Power dissipation: 92.6W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 53A
Pulsed drain current: 345A
Power dissipation: 92.6W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| NUP4301MR6T1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: diode arrays; SC74; Ch: 4; reel,tape; ESD
Type of diode: diode arrays
Case: SC74
Mounting: SMD
Max. off-state voltage: 70V
Kind of package: reel; tape
Number of channels: 4
Version: ESD
Category: Protection diodes - arrays
Description: Diode: diode arrays; SC74; Ch: 4; reel,tape; ESD
Type of diode: diode arrays
Case: SC74
Mounting: SMD
Max. off-state voltage: 70V
Kind of package: reel; tape
Number of channels: 4
Version: ESD
на замовлення 2750 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 18.80 грн |
| 27+ | 15.24 грн |
| 31+ | 13.09 грн |
| 40+ | 10.00 грн |
| 100+ | 6.59 грн |
| 500+ | 6.03 грн |
| PACDN042Y3R |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; SOT23; Ch: 2; reel,tape; ESD
Type of diode: TVS array
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5.5V
Kind of package: reel; tape
Version: ESD
Number of channels: 2
Category: Protection diodes - arrays
Description: Diode: TVS array; SOT23; Ch: 2; reel,tape; ESD
Type of diode: TVS array
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5.5V
Kind of package: reel; tape
Version: ESD
Number of channels: 2
на замовлення 2172 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 27.35 грн |
| 34+ | 11.98 грн |
| 38+ | 10.48 грн |
| 100+ | 8.57 грн |
| 165+ | 5.71 грн |
| 453+ | 5.40 грн |
| NTZD3152PT1G |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.43A; 0.25W; SOT563
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.43A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.7nC
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.43A; 0.25W; SOT563
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.43A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.7nC
на замовлення 1830 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 23.93 грн |
| 27+ | 14.76 грн |
| 34+ | 11.75 грн |
| 100+ | 8.33 грн |
| 306+ | 7.94 грн |
| 500+ | 7.62 грн |
| NTMTS1D2N08H |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 335A; Idm: 900A; 150W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 147nC
On-state resistance: 1.1mΩ
Drain-source voltage: 80V
Drain current: 335A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 335A; Idm: 900A; 150W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 147nC
On-state resistance: 1.1mΩ
Drain-source voltage: 80V
Drain current: 335A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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| NTMTS1D5N08H |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 255A; Idm: 900A; 83W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 83W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 125nC
On-state resistance: 1.5mΩ
Drain-source voltage: 80V
Drain current: 255A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 255A; Idm: 900A; 83W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 83W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 125nC
On-state resistance: 1.5mΩ
Drain-source voltage: 80V
Drain current: 255A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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| NTMTS1D6N10MCTXG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 146W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 106nC
On-state resistance: 1.7mΩ
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 146W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 106nC
On-state resistance: 1.7mΩ
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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| FDMA7672 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 24A; 2.4W; MicroFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 24A
Power dissipation: 2.4W
Case: MicroFET
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 24A; 2.4W; MicroFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 24A
Power dissipation: 2.4W
Case: MicroFET
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
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| RFD12N06RLESM9A |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 15nC
Technology: UltraFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 15nC
Technology: UltraFET®
на замовлення 1440 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 79.48 грн |
| 10+ | 58.33 грн |
| 22+ | 43.33 грн |
| 60+ | 40.95 грн |
| 250+ | 39.36 грн |
| sm05t1g | ![]() |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.7V; 17A; 300W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 6.7V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5V
Number of channels: 2
Kind of package: reel; tape
Application: general purpose
Leakage current: 10µA
Version: ESD
Max. forward impulse current: 17A
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.7V; 17A; 300W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 6.7V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5V
Number of channels: 2
Kind of package: reel; tape
Application: general purpose
Leakage current: 10µA
Version: ESD
Max. forward impulse current: 17A
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| SZSM05T1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2÷7.3V; 300W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 6.2...7.3V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2÷7.3V; 300W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 6.2...7.3V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
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| FDP22N50N |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.2A
Power dissipation: 312.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.2A
Power dissipation: 312.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 269.22 грн |
| 10+ | 218.24 грн |
| MURF860G |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; TO220FP-2; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220FP-2
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; TO220FP-2; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220FP-2
Reverse recovery time: 60ns
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| ADT7461ARMZ-R7 |
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Виробник: ONSEMI
Category: Temperature transducers
Description: IC: temperature sensor; local,remote; MSOP8; SMD; Uoper: 3÷5.5V
Type of integrated circuit: temperature sensor
Case: MSOP8
Mounting: SMD
Supply voltage: 3...5.5V
Integrated circuit features: programmable
Kind of temperature sensor: local; remote
DC supply current: 215µA
Operating voltage: 3...5.5V
Category: Temperature transducers
Description: IC: temperature sensor; local,remote; MSOP8; SMD; Uoper: 3÷5.5V
Type of integrated circuit: temperature sensor
Case: MSOP8
Mounting: SMD
Supply voltage: 3...5.5V
Integrated circuit features: programmable
Kind of temperature sensor: local; remote
DC supply current: 215µA
Operating voltage: 3...5.5V
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 293.15 грн |
| NCP1342AMDCCDR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback; 9÷28VDC
Type of integrated circuit: PMIC
Output current: -500...800mA
Mounting: SMD
Case: SO8
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback; 9÷28VDC
Type of integrated circuit: PMIC
Output current: -500...800mA
Mounting: SMD
Case: SO8
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V DC
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| FGH75T65SQD-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
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| FGH75T65SHD-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
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| FGH75T65SQDT-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
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| FGH75T65SHDT-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
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| NTP095N65S3H |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
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| NTP095N65S3HF |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
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| NCP705MT30TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 500mA; WDFN6; SMD
Operating temperature: -40...125°C
Case: WDFN6
Mounting: SMD
Type of integrated circuit: voltage regulator
Voltage drop: 0.35V
Output current: 0.5A
Number of channels: 1
Tolerance: ±2%
Input voltage: 2.5...5.5V
Output voltage: 3V
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP705
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 500mA; WDFN6; SMD
Operating temperature: -40...125°C
Case: WDFN6
Mounting: SMD
Type of integrated circuit: voltage regulator
Voltage drop: 0.35V
Output current: 0.5A
Number of channels: 1
Tolerance: ±2%
Input voltage: 2.5...5.5V
Output voltage: 3V
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP705
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| MC14521BDG |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; 24-stage,frequency divider; Ch: 1; IN: 5; CMOS; SMD
Number of channels: 1
Supply voltage: 3...18V DC
Case: SOIC16
Kind of package: tube
Mounting: SMD
Operating temperature: -55...125°C
Number of inputs: 5
Kind of integrated circuit: 24-stage; frequency divider
Technology: CMOS
Type of integrated circuit: digital
Category: Counters/dividers
Description: IC: digital; 24-stage,frequency divider; Ch: 1; IN: 5; CMOS; SMD
Number of channels: 1
Supply voltage: 3...18V DC
Case: SOIC16
Kind of package: tube
Mounting: SMD
Operating temperature: -55...125°C
Number of inputs: 5
Kind of integrated circuit: 24-stage; frequency divider
Technology: CMOS
Type of integrated circuit: digital
на замовлення 51 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 79.48 грн |
| 10+ | 65.87 грн |
| 20+ | 47.62 грн |
| MC14532BDG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,priority encoder; Ch: 1; IN: 9; CMOS; SMD; SOIC16
Operating temperature: -55...125°C
Mounting: SMD
Kind of package: tube
Number of channels: 1
Supply voltage: 3...18V DC
Number of inputs: 9
Kind of integrated circuit: 8bit; priority encoder
Technology: CMOS
Type of integrated circuit: digital
Case: SOIC16
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,priority encoder; Ch: 1; IN: 9; CMOS; SMD; SOIC16
Operating temperature: -55...125°C
Mounting: SMD
Kind of package: tube
Number of channels: 1
Supply voltage: 3...18V DC
Number of inputs: 9
Kind of integrated circuit: 8bit; priority encoder
Technology: CMOS
Type of integrated circuit: digital
Case: SOIC16
на замовлення 101 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 81.19 грн |
| 10+ | 68.25 грн |
| 20+ | 48.41 грн |
| 53+ | 46.03 грн |
| MC14526BDWG |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; 4bit,binary counter,down counter; Ch: 1; IN: 5; CMOS
Operating temperature: -55...125°C
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Supply voltage: 3...18V DC
Number of inputs: 5
Kind of integrated circuit: 4bit; binary counter; down counter
Case: SO16WB
Type of integrated circuit: digital
Technology: CMOS
Category: Counters/dividers
Description: IC: digital; 4bit,binary counter,down counter; Ch: 1; IN: 5; CMOS
Operating temperature: -55...125°C
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Supply voltage: 3...18V DC
Number of inputs: 5
Kind of integrated circuit: 4bit; binary counter; down counter
Case: SO16WB
Type of integrated circuit: digital
Technology: CMOS
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 142.73 грн |
| MC14528BDG |
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Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 3÷18VDC
Operating temperature: -55...125°C
Kind of package: tube
Mounting: SMD
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of integrated circuit: monostable; multivibrator
Type of integrated circuit: digital
Technology: CMOS
Case: SOIC16
Number of channels: 2
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 3÷18VDC
Operating temperature: -55...125°C
Kind of package: tube
Mounting: SMD
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of integrated circuit: monostable; multivibrator
Type of integrated circuit: digital
Technology: CMOS
Case: SOIC16
Number of channels: 2
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| BC848BLT3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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| NCP1076P065G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 6.3÷10VDC
Type of integrated circuit: PMIC
Case: DIP7
Mounting: SMD
Topology: flyback
Operating temperature: -40...125°C
Output current: 0.65A
Number of channels: 1
Operating voltage: 6.3...10V DC
On-state resistance: 6.9Ω
Frequency: 59...71kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 6.3÷10VDC
Type of integrated circuit: PMIC
Case: DIP7
Mounting: SMD
Topology: flyback
Operating temperature: -40...125°C
Output current: 0.65A
Number of channels: 1
Operating voltage: 6.3...10V DC
On-state resistance: 6.9Ω
Frequency: 59...71kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
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| ES3D |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Capacitance: 45pF
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Features of semiconductor devices: fast switching
Power dissipation: 1.66W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Capacitance: 45pF
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Features of semiconductor devices: fast switching
Power dissipation: 1.66W
Kind of package: reel; tape
на замовлення 2942 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 40.17 грн |
| 15+ | 28.33 грн |
| 50+ | 22.46 грн |
| 62+ | 15.24 грн |
| 169+ | 14.36 грн |
| 1000+ | 13.81 грн |
| 74VHC123AMTCX |
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Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Operating temperature: -40...85°C
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Operating temperature: -40...85°C
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| 74VHC123AM |
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Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SO16
Manufacturer series: VHC
Operating temperature: -40...85°C
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SO16
Manufacturer series: VHC
Operating temperature: -40...85°C
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| 74VHC123AMTC |
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Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP16
Kind of package: tube
Manufacturer series: VHC
Operating temperature: -40...85°C
Quiescent current: 40µA
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP16
Kind of package: tube
Manufacturer series: VHC
Operating temperature: -40...85°C
Quiescent current: 40µA
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| 74VHC123AMX |
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Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SO16
Manufacturer series: VHC
Operating temperature: -40...85°C
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SO16
Manufacturer series: VHC
Operating temperature: -40...85°C
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| NCP3065DR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter,LED driver; Uin: 3÷40VDC; 1.5A; SO8; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: 1.5A
Number of channels: 1
Input voltage: 3...40V DC
Operating voltage: 3...40V DC
Frequency: 110...190kHz
Topology: boost; buck; buck-boost
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter,LED driver; Uin: 3÷40VDC; 1.5A; SO8; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: 1.5A
Number of channels: 1
Input voltage: 3...40V DC
Operating voltage: 3...40V DC
Frequency: 110...190kHz
Topology: boost; buck; buck-boost
на замовлення 1993 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 97.43 грн |
| 10+ | 65.87 грн |
| 25+ | 60.31 грн |
| MC14512BDR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; TTL; SMD; SO16; 3÷18VDC; -40÷85°C
Operating temperature: -40...85°C
Kind of package: reel; tape
Mounting: SMD
Supply voltage: 3...18V DC
Kind of integrated circuit: data selector
Type of integrated circuit: digital
Technology: TTL
Case: SO16
Number of channels: 8
Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; TTL; SMD; SO16; 3÷18VDC; -40÷85°C
Operating temperature: -40...85°C
Kind of package: reel; tape
Mounting: SMD
Supply voltage: 3...18V DC
Kind of integrated circuit: data selector
Type of integrated circuit: digital
Technology: TTL
Case: SO16
Number of channels: 8
на замовлення 2496 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.02 грн |
| 15+ | 27.14 грн |
| 25+ | 24.20 грн |
| 49+ | 19.05 грн |
| 135+ | 18.01 грн |
| MBRS2040LT3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Max. off-state voltage: 40V
Load current: 2A
Case: SMB
Max. forward voltage: 0.45V
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. load current: 4A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Max. off-state voltage: 40V
Load current: 2A
Case: SMB
Max. forward voltage: 0.45V
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. load current: 4A
на замовлення 3609 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 30.77 грн |
| 18+ | 22.06 грн |
| 50+ | 17.30 грн |
| 98+ | 9.60 грн |
| 268+ | 9.05 грн |
| NRVB5100MFST1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 5A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.98V
Load current: 5A
Max. load current: 10A
Max. forward impulse current: 75A
Max. off-state voltage: 100V
Kind of package: reel; tape
Application: automotive industry
Case: DFN5
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 5A; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.98V
Load current: 5A
Max. load current: 10A
Max. forward impulse current: 75A
Max. off-state voltage: 100V
Kind of package: reel; tape
Application: automotive industry
Case: DFN5
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| MJ11032G |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 30A; 300W; TO3
Kind of package: in-tray
Polarisation: bipolar
Kind of transistor: Darlington
Case: TO3
Mounting: THT
Type of transistor: NPN
Power dissipation: 300W
Collector current: 30A
Collector-emitter voltage: 120V
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 30A; 300W; TO3
Kind of package: in-tray
Polarisation: bipolar
Kind of transistor: Darlington
Case: TO3
Mounting: THT
Type of transistor: NPN
Power dissipation: 300W
Collector current: 30A
Collector-emitter voltage: 120V
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 958.06 грн |
| 2+ | 871.38 грн |
| 3+ | 823.76 грн |
| MC14543BDG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; BCD to 7-segment,decoder,display driver; Ch: 1; IN: 4
Kind of integrated circuit: BCD to 7-segment; decoder; display driver
Technology: CMOS
Type of integrated circuit: digital
Case: SO16
Mounting: SMD
Number of channels: 1
Number of inputs: 4
Category: Decoders, multiplexers, switches
Description: IC: digital; BCD to 7-segment,decoder,display driver; Ch: 1; IN: 4
Kind of integrated circuit: BCD to 7-segment; decoder; display driver
Technology: CMOS
Type of integrated circuit: digital
Case: SO16
Mounting: SMD
Number of channels: 1
Number of inputs: 4
на замовлення 27 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 31.62 грн |
| 20+ | 20.48 грн |
| 25+ | 18.65 грн |
| NTR5198NLT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
On-state resistance: 155mΩ
Power dissipation: 0.6W
Drain current: 1.6A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
On-state resistance: 155mΩ
Power dissipation: 0.6W
Drain current: 1.6A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
на замовлення 594 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 23.93 грн |
| 30+ | 13.49 грн |
| 37+ | 10.76 грн |
| 100+ | 7.87 грн |
| 195+ | 4.80 грн |
| 534+ | 4.54 грн |
| NVR5198NLT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Gate charge: 5.1nC
On-state resistance: 0.205Ω
Power dissipation: 0.4W
Drain current: 1.2A
Gate-source voltage: ±20V
Pulsed drain current: 27A
Drain-source voltage: 60V
Polarisation: unipolar
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Gate charge: 5.1nC
On-state resistance: 0.205Ω
Power dissipation: 0.4W
Drain current: 1.2A
Gate-source voltage: ±20V
Pulsed drain current: 27A
Drain-source voltage: 60V
Polarisation: unipolar
Application: automotive industry
на замовлення 1683 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 33.33 грн |
| 18+ | 22.06 грн |
| 24+ | 16.59 грн |
| 37+ | 10.87 грн |
| 233+ | 10.40 грн |
| BVSS138LT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| NTR4171PT1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3003 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.46 грн |
| 16+ | 26.19 грн |
| 25+ | 22.62 грн |
| 50+ | 20.24 грн |
| 72+ | 13.09 грн |
| 196+ | 12.38 грн |
| 1000+ | 11.90 грн |
| NTR0202PLT1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.4A; 0.225W; SOT23
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.4A
Gate charge: 2.18nC
Power dissipation: 0.225W
On-state resistance: 0.55Ω
Gate-source voltage: ±20V
Case: SOT23
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.4A; 0.225W; SOT23
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.4A
Gate charge: 2.18nC
Power dissipation: 0.225W
On-state resistance: 0.55Ω
Gate-source voltage: ±20V
Case: SOT23
Kind of package: reel; tape
на замовлення 2988 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.84 грн |
| 72+ | 5.56 грн |
| 89+ | 4.48 грн |
| 100+ | 4.05 грн |
| 500+ | 3.29 грн |
| 1000+ | 3.06 грн |
| 1500+ | 2.94 грн |
| FOD8802A |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 75V; SO8
Case: SO8
Mounting: SMD
Max. off-state voltage: 6V
Collector-emitter voltage: 75V
Insulation voltage: 2.5kV
Slew rate: 10kV/μs
Manufacturer series: FOD8802
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-on time: 6µs
Turn-off time: 40µs
Number of channels: 2
CTR@If: 35-230%@1mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 75V; SO8
Case: SO8
Mounting: SMD
Max. off-state voltage: 6V
Collector-emitter voltage: 75V
Insulation voltage: 2.5kV
Slew rate: 10kV/μs
Manufacturer series: FOD8802
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-on time: 6µs
Turn-off time: 40µs
Number of channels: 2
CTR@If: 35-230%@1mA
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| MICROFC-SMA-30020-GEVB |
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на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 30810.17 грн |
| FDMS7698 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 50A; 29W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 50A
Power dissipation: 29W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 50A; 29W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 50A
Power dissipation: 29W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NCP133AMX090TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.9V; 500mA; XDFN6; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP133
Case: XDFN6
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 0.5A
Voltage drop: 0.25V
Output voltage: 0.9V
Input voltage: 0.8...5.5V
Number of channels: 1
Tolerance: ±1.5%
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.9V; 500mA; XDFN6; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP133
Case: XDFN6
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 0.5A
Voltage drop: 0.25V
Output voltage: 0.9V
Input voltage: 0.8...5.5V
Number of channels: 1
Tolerance: ±1.5%
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