| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| MUR2100ERLG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 2A; reel,tape; Ifsm: 35A; DO41; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 2A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 35A Case: DO41 Reverse recovery time: 75ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| CAT25640VI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; SOIC8 Case: SOIC8 Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Kind of package: reel; tape Kind of interface: serial Mounting: SMD Interface: SPI Operating temperature: -40...85°C Access time: 40ns Operating voltage: 1.8...5.5V Memory: 64kb EEPROM Memory organisation: 8kx8bit Clock frequency: 20MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTMTSC4D3N15MC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 174A; Idm: 900A; 293W; TDFNW8 Kind of package: reel; tape Pulsed drain current: 900A Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Case: TDFNW8 Gate charge: 79nC On-state resistance: 4.45mΩ Power dissipation: 293W Gate-source voltage: ±20V Drain-source voltage: 150V Drain current: 174A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC14001UBDG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Mounting: SMD Kind of gate: NOR Case: SO14 Number of channels: quad; 4 Kind of package: tube Operating temperature: -55...125°C Delay time: 100ns Number of inputs: 2 Supply voltage: 3...18V DC Family: HEF4000B Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NTBLS4D0N15MC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 187A; Idm: 2255A; 316W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 316W Case: H-PSOF8L Mounting: SMD Kind of package: reel; tape Gate charge: 90.4nC Kind of channel: enhancement On-state resistance: 4.4mΩ Drain current: 187A Pulsed drain current: 2255A Drain-source voltage: 150V Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| RB521S30T5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 1A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVRB521S30T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVRB521S30T5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MM3Z3V6T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 3.6V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G |
на замовлення 6901 шт: термін постачання 21-30 дні (днів) |
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2SC3647S-TD-E | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 2A; 1.5W; SOT89 Collector current: 2A Collector-emitter voltage: 100V Current gain: 140...280 Frequency: 120MHz Case: SOT89 Polarisation: bipolar Kind of package: reel; tape Type of transistor: NPN Mounting: SMD Power dissipation: 1.5W |
на замовлення 759 шт: термін постачання 21-30 дні (днів) |
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| FSA2269L10X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.5VDC; reel,tape; 500nA Number of channels: 2 Mounting: SMD Kind of package: reel; tape Kind of output: SPDT x2 Technology: TTL Operating temperature: -40...85°C Quiescent current: 500nA Supply voltage: 1.65...4.5V DC Case: MicroPak10 Type of integrated circuit: analog switch |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BAS16HT3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 200mA; 6ns; SOD323; Ufmax: 1V; Ifsm: 36A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD323 Max. forward voltage: 1V Max. forward impulse current: 36A Leakage current: 1µA Power dissipation: 0.2W Max. load current: 0.2A |
на замовлення 70000 шт: термін постачання 21-30 дні (днів) |
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MC74LVXT4052DTG | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; SMD Type of integrated circuit: digital Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer Number of channels: 2 Case: TSSOP16 Supply voltage: -6...0V DC; 2.5...6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Technology: CMOS; TTL Manufacturer series: LVXT Family: LVXT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74LVXT4051DR2G | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: digital; demultiplexer,multiplexer; Ch: 1; SO16; 2.5÷6VDC; 80uA Type of integrated circuit: digital Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 1 Case: SO16 Supply voltage: 2.5...6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Quiescent current: 80µA Technology: CMOS; TTL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MC74LVXT4051DTR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Case: TSSOP16 Supply voltage: -6...0V DC; 2.5...6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Technology: CMOS; TTL Manufacturer series: LVXT Family: LVXT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MMBT6428LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 50V; 200mA; 225/300mW; SOT23 Mounting: SMD Type of transistor: NPN Kind of transistor: RF Case: SOT23 Collector current: 0.2A Power dissipation: 0.225/0.3W Collector-emitter voltage: 50V Current gain: 250...650 Frequency: 700MHz Kind of package: reel; tape Polarisation: bipolar |
на замовлення 2375 шт: термін постачання 21-30 дні (днів) |
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MBRS3201T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape Case: SMC Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. forward voltage: 0.59V Load current: 3A Max. off-state voltage: 200V Type of diode: Schottky rectifying |
на замовлення 539 шт: термін постачання 21-30 дні (днів) |
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MC74AC132DR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; AC Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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KSA1281YTA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 50V; 2A; 1W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 2A Case: TO92 Formed Current gain: 120...240 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz Power dissipation: 1W |
на замовлення 1880 шт: термін постачання 21-30 дні (днів) |
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| FOD817B3S | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler Type of optocoupler: optocoupler |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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| NTBG045N065SC1 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 44A; Idm: 184A; 121W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 44A Pulsed drain current: 184A Power dissipation: 121W Case: D2PAK-7 Gate-source voltage: -5...18V On-state resistance: 40mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTBL045N065SC1 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 51A; Idm: 182A; 174W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 51A Pulsed drain current: 182A Power dissipation: 174W Case: H-PSOF8L Gate-source voltage: -5...18V On-state resistance: 40mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTTFS030N06CTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 86A; 11W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 19A Pulsed drain current: 86A Power dissipation: 11W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 29.7mΩ Mounting: SMD Gate charge: 4.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1N5388BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 200V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 200V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
на замовлення 3750 шт: термін постачання 21-30 дні (днів) |
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MBRM120LT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO216AA; SMD; 20V; 1A; reel,tape Type of diode: Schottky rectifying Case: DO216AA Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.45V Max. load current: 2A Max. forward impulse current: 50A Kind of package: reel; tape |
на замовлення 2417 шт: термін постачання 21-30 дні (днів) |
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NCP432BVSNT1G | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±0.5% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Operating voltage: 2.5...36V Kind of package: reel; tape Maximum output current: 0.1A |
на замовлення 2935 шт: термін постачання 21-30 дні (днів) |
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SZBZX84C4V7LT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 3µA Manufacturer series: BZX84C Application: automotive industry |
на замовлення 5425 шт: термін постачання 21-30 дні (днів) |
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| SZBZX84C4V7ET1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.7V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NTJS3157NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363 Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 60mΩ Power dissipation: 1W Drain current: 2.3A Gate-source voltage: ±8V Drain-source voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NLAS3157MX3TCG | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; demultiplexer,multiplexer; ULLGA6; reel,tape Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Case: ULLGA6 Supply voltage: 1.65...4.5V DC Mounting: SMD Kind of package: reel; tape Kind of output: SPDT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BAS19LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 120V; 0.2A; SOT23; Ufmax: 1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 120V Load current: 0.2A Semiconductor structure: single diode Case: SOT23 Kind of package: reel; tape Capacitance: 5pF Max. forward voltage: 1V |
на замовлення 6071 шт: термін постачання 21-30 дні (днів) |
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| NSVBAS19LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 120V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOT23 Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MOC3031M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 250V; DIP6; Ch: 1; MOC303XM Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac; zero voltage crossing driver Case: DIP6 Max. off-state voltage: 6V Trigger current: 15mA Mounting: THT Number of channels: 1 Manufacturer series: MOC303XM Output voltage: 250V |
на замовлення 1753 шт: термін постачання 21-30 дні (днів) |
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| MC74VHC1G132DFT1G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; IN: 2; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Case: SC88A Supply voltage: 2...5.5V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Technology: CMOS Number of inputs: 2 Kind of gate: NAND |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP51820AMNTWG | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; H-bridge; high-side,low-side,gate driver; GaN; QFN15 Technology: GaN Case: QFN15 Mounting: SMD Voltage class: 650V Kind of integrated circuit: gate driver; high-side; low-side Topology: H-bridge Type of integrated circuit: driver Operating temperature: -40...125°C Output current: -2...1A Supply voltage: 9...17V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5383BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 150V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 150V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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HUF75339P3 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 75A; 200W; TO220AB Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Technology: UltraFET® Polarisation: unipolar Gate charge: 130nC On-state resistance: 12mΩ Gate-source voltage: ±20V Drain-source voltage: 55V Drain current: 75A Power dissipation: 200W Case: TO220AB Kind of channel: enhancement |
на замовлення 79 шт: термін постачання 21-30 дні (днів) |
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MC33161DR2G | ONSEMI |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open collector Active logical level: low Supply voltage: 2...40V DC Case: SO8 Operating temperature: -40...105°C Mounting: SMD DC supply current: 560µA Maximum output current: 20mA Threshold on-voltage: 1.27V Kind of package: reel; tape Number of channels: 2 |
на замовлення 708 шт: термін постачання 21-30 дні (днів) |
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MC33172DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.8MHz; Ch: 2; SO8; ±1.5÷22VDC,3÷44VDC Type of integrated circuit: operational amplifier Bandwidth: 1.8MHz Mounting: SMT Case: SO8 Slew rate: 2.1V/μs Operating temperature: -40...85°C Input offset voltage: 2mV Voltage supply range: ± 1.5...22V DC; 3...44V DC Integrated circuit features: low power Kind of package: reel; tape Number of channels: 2 |
на замовлення 2165 шт: термін постачання 21-30 дні (днів) |
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MC33164P-5G | ONSEMI |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC Mounting: THT Operating temperature: -40...125°C Active logical level: low Kind of RESET output: open collector DC supply current: 32µA Maximum output current: 50mA Supply voltage: 1...10V DC Threshold on-voltage: 4.33V Kind of package: bulk Case: TO92 Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) |
на замовлення 1232 шт: термін постачання 21-30 дні (днів) |
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MC33161DG | ONSEMI |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open collector Active logical level: low Supply voltage: 2...40V DC Case: SO8 Operating temperature: -40...105°C Mounting: SMD DC supply current: 560µA Maximum output current: 20mA Threshold on-voltage: 1.27V Kind of package: tube Number of channels: 2 |
на замовлення 136 шт: термін постачання 21-30 дні (днів) |
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MC34152DR2G | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Output voltage: 0.8...11.2V Number of channels: 2 Supply voltage: 6.1...18V DC Mounting: SMD Operating temperature: 0...70°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: reel; tape Kind of output: non-inverting Protection: undervoltage UVP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ESD8008MUTAG | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 5.5÷8.5V; uDFN14; Ch: 8; reel,tape; ESD Type of diode: TVS array Breakdown voltage: 5.5...8.5V Mounting: SMD Case: uDFN14 Max. off-state voltage: 3.3V Kind of package: reel; tape Version: ESD Number of channels: 8 |
на замовлення 2760 шт: термін постачання 21-30 дні (днів) |
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| FSB50450AS | ONSEMI |
Category: Motor and PWM driversDescription: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; 300V Operating temperature: -40...150°C Mounting: SMD Case: Gull wing; PowerSMD Output current: 1.5A Supply voltage: 300V Type of integrated circuit: driver Integrated circuit features: MOSFET |
на замовлення 11491 шт: термін постачання 21-30 дні (днів) |
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FDD86250 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 27A; Idm: 164A; 132W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Drain-source voltage: 150V Drain current: 27A Power dissipation: 132W Case: DPAK Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 33nC Kind of channel: enhancement Polarisation: unipolar Kind of package: reel; tape Pulsed drain current: 164A |
на замовлення 2401 шт: термін постачання 21-30 дні (днів) |
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BD13810STU | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1.5A Case: TO126ISO Current gain: 63...160 Mounting: THT Power dissipation: 12.5W Kind of package: tube |
на замовлення 1248 шт: термін постачання 21-30 дні (днів) |
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FDC6561AN | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6 Mounting: SMD Type of transistor: N-MOSFET x2 Case: SuperSOT-6 Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.5A Gate charge: 3.2nC On-state resistance: 152mΩ Gate-source voltage: ±20V Power dissipation: 0.96W Kind of channel: enhancement Technology: PowerTrench® Kind of package: reel; tape |
на замовлення 867 шт: термін постачання 21-30 дні (днів) |
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NDC7003P | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6 Case: SuperSOT-6 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.34A Gate charge: 2.2nC Power dissipation: 0.96W On-state resistance: 10Ω Gate-source voltage: ±20V |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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FDC6321C | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V Mounting: SMD Type of transistor: N/P-MOSFET Case: SuperSOT-6 Polarisation: unipolar Drain-source voltage: 25/-25V Drain current: 0.68/-0.46A Gate charge: 2.3/1.5nC On-state resistance: 720/1220mΩ Gate-source voltage: ±8V Power dissipation: 0.9W Kind of channel: enhancement Kind of transistor: complementary pair Technology: PowerTrench® Kind of package: reel; tape |
на замовлення 1429 шт: термін постачання 21-30 дні (днів) |
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FDC6333C | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Mounting: SMD Type of transistor: N/P-MOSFET Case: SuperSOT-6 Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 2.5/-2A Gate charge: 6.6/5.7nC On-state resistance: 150/220mΩ Gate-source voltage: ±16/±25V Power dissipation: 0.96W Kind of channel: enhancement Kind of transistor: complementary pair Technology: PowerTrench® Kind of package: reel; tape |
на замовлення 1960 шт: термін постачання 21-30 дні (днів) |
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FDC658AP | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6 Mounting: SMD Type of transistor: P-MOSFET Case: SuperSOT-6 Features of semiconductor devices: logic level Polarisation: unipolar Drain-source voltage: -30V Drain current: -4A Gate charge: 8.1nC On-state resistance: 75mΩ Gate-source voltage: ±25V Power dissipation: 1.6W Kind of channel: enhancement Technology: PowerTrench® Kind of package: reel; tape |
на замовлення 2476 шт: термін постачання 21-30 дні (днів) |
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MMSZ4685T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Case: SOD123 Mounting: SMD Semiconductor structure: single diode Kind of package: reel; tape Leakage current: 7.5µA Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 3.6V Manufacturer series: MMSZ4xxT1G |
на замовлення 602 шт: термін постачання 21-30 дні (днів) |
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1N5375BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 82V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 82V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
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В кошику од. на суму грн. | ||||||||||||||||||
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1N5375BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 82V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 82V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MC74HC377ADTR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; octal,D flip-flop; Ch: 8; CMOS; HC; SMD; TSSOP20; HC Type of integrated circuit: digital Kind of integrated circuit: D flip-flop; octal Number of channels: 8 Mounting: SMD Case: TSSOP20 Operating temperature: -55...125°C Supply voltage: 2...6V DC Kind of package: reel; tape Family: HC Technology: CMOS Manufacturer series: HC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1N5374BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 75V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB Case: CASE017AA Semiconductor structure: single diode Mounting: THT Type of diode: Zener Leakage current: 0.5µA Power dissipation: 5W Tolerance: ±5% Zener voltage: 75V Manufacturer series: 1N53xxB Kind of package: bulk |
на замовлення 700 шт: термін постачання 21-30 дні (днів) |
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MMDL301T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD323; SMD; 30V; reel,tape; 200mW Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 30V Semiconductor structure: single diode Max. forward voltage: 0.6V Kind of package: reel; tape Power dissipation: 0.2W Capacitance: 1.5pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MMDL101T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD323; SMD; 7V; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 7V Semiconductor structure: single diode Max. forward voltage: 0.6V Kind of package: reel; tape Capacitance: 1pF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MMSZ5252BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 2674 шт: термін постачання 21-30 дні (днів) |
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| NXH450N65L4Q2F2S1G | ONSEMI |
Category: IGBT modulesDescription: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 450A; PIM40; SiC Collector current: 450A Case: PIM40 Gate-emitter voltage: ±20V Semiconductor structure: diode/transistor Type of semiconductor module: IGBT Application: for UPS; Inverter Technology: SiC Max. off-state voltage: 650V Topology: NTC thermistor; three-level inverter; single-phase Mechanical mounting: screw |
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В кошику од. на суму грн. |
| MUR2100ERLG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 2A; reel,tape; Ifsm: 35A; DO41; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 35A
Case: DO41
Reverse recovery time: 75ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 2A; reel,tape; Ifsm: 35A; DO41; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 35A
Case: DO41
Reverse recovery time: 75ns
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| CAT25640VI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; SOIC8
Case: SOIC8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Interface: SPI
Operating temperature: -40...85°C
Access time: 40ns
Operating voltage: 1.8...5.5V
Memory: 64kb EEPROM
Memory organisation: 8kx8bit
Clock frequency: 20MHz
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; SOIC8
Case: SOIC8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Interface: SPI
Operating temperature: -40...85°C
Access time: 40ns
Operating voltage: 1.8...5.5V
Memory: 64kb EEPROM
Memory organisation: 8kx8bit
Clock frequency: 20MHz
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| NTMTSC4D3N15MC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 174A; Idm: 900A; 293W; TDFNW8
Kind of package: reel; tape
Pulsed drain current: 900A
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: TDFNW8
Gate charge: 79nC
On-state resistance: 4.45mΩ
Power dissipation: 293W
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 174A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 174A; Idm: 900A; 293W; TDFNW8
Kind of package: reel; tape
Pulsed drain current: 900A
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: TDFNW8
Gate charge: 79nC
On-state resistance: 4.45mΩ
Power dissipation: 293W
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 174A
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| MC14001UBDG | ![]() |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Kind of gate: NOR
Case: SO14
Number of channels: quad; 4
Kind of package: tube
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 2
Supply voltage: 3...18V DC
Family: HEF4000B
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Kind of gate: NOR
Case: SO14
Number of channels: quad; 4
Kind of package: tube
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 2
Supply voltage: 3...18V DC
Family: HEF4000B
Technology: CMOS
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| NTBLS4D0N15MC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 187A; Idm: 2255A; 316W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 316W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 90.4nC
Kind of channel: enhancement
On-state resistance: 4.4mΩ
Drain current: 187A
Pulsed drain current: 2255A
Drain-source voltage: 150V
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 187A; Idm: 2255A; 316W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 316W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 90.4nC
Kind of channel: enhancement
On-state resistance: 4.4mΩ
Drain current: 187A
Pulsed drain current: 2255A
Drain-source voltage: 150V
Gate-source voltage: ±20V
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| RB521S30T5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
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| NSVRB521S30T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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| NSVRB521S30T5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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| MM3Z3V6T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
на замовлення 6901 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 58+ | 7.45 грн |
| 81+ | 4.92 грн |
| 95+ | 4.21 грн |
| 117+ | 3.40 грн |
| 166+ | 2.40 грн |
| 500+ | 1.61 грн |
| 811+ | 1.15 грн |
| 2227+ | 1.09 грн |
| 3000+ | 1.05 грн |
| 2SC3647S-TD-E |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1.5W; SOT89
Collector current: 2A
Collector-emitter voltage: 100V
Current gain: 140...280
Frequency: 120MHz
Case: SOT89
Polarisation: bipolar
Kind of package: reel; tape
Type of transistor: NPN
Mounting: SMD
Power dissipation: 1.5W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1.5W; SOT89
Collector current: 2A
Collector-emitter voltage: 100V
Current gain: 140...280
Frequency: 120MHz
Case: SOT89
Polarisation: bipolar
Kind of package: reel; tape
Type of transistor: NPN
Mounting: SMD
Power dissipation: 1.5W
на замовлення 759 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 65.81 грн |
| 11+ | 37.78 грн |
| 47+ | 20.08 грн |
| 128+ | 19.05 грн |
| FSA2269L10X |
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.5VDC; reel,tape; 500nA
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT x2
Technology: TTL
Operating temperature: -40...85°C
Quiescent current: 500nA
Supply voltage: 1.65...4.5V DC
Case: MicroPak10
Type of integrated circuit: analog switch
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.5VDC; reel,tape; 500nA
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT x2
Technology: TTL
Operating temperature: -40...85°C
Quiescent current: 500nA
Supply voltage: 1.65...4.5V DC
Case: MicroPak10
Type of integrated circuit: analog switch
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| BAS16HT3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOD323; Ufmax: 1V; Ifsm: 36A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 36A
Leakage current: 1µA
Power dissipation: 0.2W
Max. load current: 0.2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOD323; Ufmax: 1V; Ifsm: 36A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1V
Max. forward impulse current: 36A
Leakage current: 1µA
Power dissipation: 0.2W
Max. load current: 0.2A
на замовлення 70000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 1.04 грн |
| MC74LVXT4052DTG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
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| MC74LVXT4051DR2G |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 1; SO16; 2.5÷6VDC; 80uA
Type of integrated circuit: digital
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: SO16
Supply voltage: 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 80µA
Technology: CMOS; TTL
Category: Analog multiplexers and switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 1; SO16; 2.5÷6VDC; 80uA
Type of integrated circuit: digital
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: SO16
Supply voltage: 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 80µA
Technology: CMOS; TTL
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| MC74LVXT4051DTR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
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| MMBT6428LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 50V; 200mA; 225/300mW; SOT23
Mounting: SMD
Type of transistor: NPN
Kind of transistor: RF
Case: SOT23
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Collector-emitter voltage: 50V
Current gain: 250...650
Frequency: 700MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 50V; 200mA; 225/300mW; SOT23
Mounting: SMD
Type of transistor: NPN
Kind of transistor: RF
Case: SOT23
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Collector-emitter voltage: 50V
Current gain: 250...650
Frequency: 700MHz
Kind of package: reel; tape
Polarisation: bipolar
на замовлення 2375 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 13.67 грн |
| 73+ | 5.48 грн |
| 98+ | 4.06 грн |
| 110+ | 3.63 грн |
| 450+ | 2.07 грн |
| 1236+ | 1.96 грн |
| MBRS3201T3G | ![]() |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Load current: 3A
Max. off-state voltage: 200V
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Load current: 3A
Max. off-state voltage: 200V
Type of diode: Schottky rectifying
на замовлення 539 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 59.83 грн |
| 10+ | 44.52 грн |
| 31+ | 30.40 грн |
| 85+ | 28.73 грн |
| 500+ | 27.62 грн |
| MC74AC132DR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AC
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| KSA1281YTA |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Case: TO92 Formed
Current gain: 120...240
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Power dissipation: 1W
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Case: TO92 Formed
Current gain: 120...240
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Power dissipation: 1W
на замовлення 1880 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 44.44 грн |
| 14+ | 30.32 грн |
| 50+ | 21.11 грн |
| 78+ | 12.06 грн |
| 214+ | 11.43 грн |
| FOD817B3S |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 7.69 грн |
| NTBG045N065SC1 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 44A; Idm: 184A; 121W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Pulsed drain current: 184A
Power dissipation: 121W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 44A; Idm: 184A; 121W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Pulsed drain current: 184A
Power dissipation: 121W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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| NTBL045N065SC1 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 51A; Idm: 182A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 51A
Pulsed drain current: 182A
Power dissipation: 174W
Case: H-PSOF8L
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 51A; Idm: 182A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 51A
Pulsed drain current: 182A
Power dissipation: 174W
Case: H-PSOF8L
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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| NTTFS030N06CTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 86A; 11W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 86A
Power dissipation: 11W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 86A; 11W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 86A
Power dissipation: 11W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| 1N5388BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 200V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 200V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 200V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 200V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
на замовлення 3750 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 29.91 грн |
| 17+ | 24.60 грн |
| 18+ | 22.30 грн |
| 70+ | 13.41 грн |
| 191+ | 12.70 грн |
| 500+ | 12.22 грн |
| MBRM120LT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO216AA; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: DO216AA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. load current: 2A
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO216AA; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: DO216AA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. load current: 2A
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 2417 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 19.66 грн |
| 30+ | 13.65 грн |
| 100+ | 11.59 грн |
| NCP432BVSNT1G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...36V
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 2935 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 27.35 грн |
| 20+ | 20.48 грн |
| 22+ | 18.17 грн |
| 26+ | 15.55 грн |
| 86+ | 10.95 грн |
| 235+ | 10.32 грн |
| SZBZX84C4V7LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
Application: automotive industry
на замовлення 5425 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.26 грн |
| 50+ | 8.09 грн |
| 58+ | 6.90 грн |
| 98+ | 4.06 грн |
| 126+ | 3.17 грн |
| 500+ | 1.92 грн |
| 574+ | 1.63 грн |
| 1500+ | 1.50 грн |
| 3000+ | 1.48 грн |
| SZBZX84C4V7ET1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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| NTJS3157NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 60mΩ
Power dissipation: 1W
Drain current: 2.3A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 60mΩ
Power dissipation: 1W
Drain current: 2.3A
Gate-source voltage: ±8V
Drain-source voltage: 20V
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| NLAS3157MX3TCG |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; ULLGA6; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: ULLGA6
Supply voltage: 1.65...4.5V DC
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; ULLGA6; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: ULLGA6
Supply voltage: 1.65...4.5V DC
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT
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| BAS19LT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; SOT23; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Capacitance: 5pF
Max. forward voltage: 1V
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; SOT23; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Capacitance: 5pF
Max. forward voltage: 1V
на замовлення 6071 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 53+ | 8.11 грн |
| 79+ | 5.08 грн |
| 88+ | 4.52 грн |
| 116+ | 3.43 грн |
| 134+ | 2.97 грн |
| 500+ | 1.99 грн |
| 689+ | 1.35 грн |
| 1893+ | 1.28 грн |
| NSVBAS19LT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT23
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOT23
Kind of package: reel; tape
Application: automotive industry
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| MOC3031M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; DIP6; Ch: 1; MOC303XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC303XM
Output voltage: 250V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; DIP6; Ch: 1; MOC303XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC303XM
Output voltage: 250V
на замовлення 1753 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 71.79 грн |
| 10+ | 40.00 грн |
| 50+ | 34.36 грн |
| 100+ | 32.46 грн |
| MC74VHC1G132DFT1G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; IN: 2; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Case: SC88A
Supply voltage: 2...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 2
Kind of gate: NAND
Category: Gates, inverters
Description: IC: digital; NAND; IN: 2; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Case: SC88A
Supply voltage: 2...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 2
Kind of gate: NAND
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| NCP51820AMNTWG |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,low-side,gate driver; GaN; QFN15
Technology: GaN
Case: QFN15
Mounting: SMD
Voltage class: 650V
Kind of integrated circuit: gate driver; high-side; low-side
Topology: H-bridge
Type of integrated circuit: driver
Operating temperature: -40...125°C
Output current: -2...1A
Supply voltage: 9...17V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,low-side,gate driver; GaN; QFN15
Technology: GaN
Case: QFN15
Mounting: SMD
Voltage class: 650V
Kind of integrated circuit: gate driver; high-side; low-side
Topology: H-bridge
Type of integrated circuit: driver
Operating temperature: -40...125°C
Output current: -2...1A
Supply voltage: 9...17V DC
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| 1N5383BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 150V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 150V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 5W; 150V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 150V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Kind of package: reel; tape
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| HUF75339P3 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 200W; TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Technology: UltraFET®
Polarisation: unipolar
Gate charge: 130nC
On-state resistance: 12mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 200W
Case: TO220AB
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 200W; TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Technology: UltraFET®
Polarisation: unipolar
Gate charge: 130nC
On-state resistance: 12mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 200W
Case: TO220AB
Kind of channel: enhancement
на замовлення 79 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 109.40 грн |
| 5+ | 92.06 грн |
| 10+ | 84.12 грн |
| 12+ | 81.74 грн |
| 32+ | 76.98 грн |
| MC33161DR2G |
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Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 2...40V DC
Case: SO8
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 560µA
Maximum output current: 20mA
Threshold on-voltage: 1.27V
Kind of package: reel; tape
Number of channels: 2
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 2...40V DC
Case: SO8
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 560µA
Maximum output current: 20mA
Threshold on-voltage: 1.27V
Kind of package: reel; tape
Number of channels: 2
на замовлення 708 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 68.37 грн |
| 10+ | 46.03 грн |
| 25+ | 44.44 грн |
| MC33172DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 2; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Case: SO8
Slew rate: 2.1V/μs
Operating temperature: -40...85°C
Input offset voltage: 2mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Integrated circuit features: low power
Kind of package: reel; tape
Number of channels: 2
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 2; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Case: SO8
Slew rate: 2.1V/μs
Operating temperature: -40...85°C
Input offset voltage: 2mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Integrated circuit features: low power
Kind of package: reel; tape
Number of channels: 2
на замовлення 2165 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 27.35 грн |
| 19+ | 21.59 грн |
| 21+ | 19.21 грн |
| 25+ | 16.59 грн |
| 50+ | 15.00 грн |
| 100+ | 13.81 грн |
| 250+ | 12.70 грн |
| 500+ | 12.14 грн |
| MC33164P-5G | ![]() |
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Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Mounting: THT
Operating temperature: -40...125°C
Active logical level: low
Kind of RESET output: open collector
DC supply current: 32µA
Maximum output current: 50mA
Supply voltage: 1...10V DC
Threshold on-voltage: 4.33V
Kind of package: bulk
Case: TO92
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Mounting: THT
Operating temperature: -40...125°C
Active logical level: low
Kind of RESET output: open collector
DC supply current: 32µA
Maximum output current: 50mA
Supply voltage: 1...10V DC
Threshold on-voltage: 4.33V
Kind of package: bulk
Case: TO92
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
на замовлення 1232 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.88 грн |
| 14+ | 29.13 грн |
| 25+ | 26.35 грн |
| 100+ | 26.27 грн |
| MC33161DG |
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Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 2...40V DC
Case: SO8
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 560µA
Maximum output current: 20mA
Threshold on-voltage: 1.27V
Kind of package: tube
Number of channels: 2
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 2÷40VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 2...40V DC
Case: SO8
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 560µA
Maximum output current: 20mA
Threshold on-voltage: 1.27V
Kind of package: tube
Number of channels: 2
на замовлення 136 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 84.61 грн |
| 10+ | 53.17 грн |
| 25+ | 46.03 грн |
| MC34152DR2G |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.1...18V DC
Mounting: SMD
Operating temperature: 0...70°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Kind of output: non-inverting
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.1...18V DC
Mounting: SMD
Operating temperature: 0...70°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Kind of output: non-inverting
Protection: undervoltage UVP
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| ESD8008MUTAG |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5÷8.5V; uDFN14; Ch: 8; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 5.5...8.5V
Mounting: SMD
Case: uDFN14
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Version: ESD
Number of channels: 8
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5÷8.5V; uDFN14; Ch: 8; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 5.5...8.5V
Mounting: SMD
Case: uDFN14
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Version: ESD
Number of channels: 8
на замовлення 2760 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 48.72 грн |
| 10+ | 40.55 грн |
| 40+ | 23.49 грн |
| 110+ | 22.14 грн |
| FSB50450AS |
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Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; 300V
Operating temperature: -40...150°C
Mounting: SMD
Case: Gull wing; PowerSMD
Output current: 1.5A
Supply voltage: 300V
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Category: Motor and PWM drivers
Description: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; 300V
Operating temperature: -40...150°C
Mounting: SMD
Case: Gull wing; PowerSMD
Output current: 1.5A
Supply voltage: 300V
Type of integrated circuit: driver
Integrated circuit features: MOSFET
на замовлення 11491 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 450+ | 433.31 грн |
| FDD86250 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; Idm: 164A; 132W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Drain-source voltage: 150V
Drain current: 27A
Power dissipation: 132W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 33nC
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: reel; tape
Pulsed drain current: 164A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; Idm: 164A; 132W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Drain-source voltage: 150V
Drain current: 27A
Power dissipation: 132W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 33nC
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: reel; tape
Pulsed drain current: 164A
на замовлення 2401 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 129.05 грн |
| 10+ | 96.03 грн |
| 27+ | 90.47 грн |
| 250+ | 88.88 грн |
| 500+ | 87.30 грн |
| BD13810STU |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO126ISO
Current gain: 63...160
Mounting: THT
Power dissipation: 12.5W
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO126ISO
Current gain: 63...160
Mounting: THT
Power dissipation: 12.5W
Kind of package: tube
на замовлення 1248 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.46 грн |
| 25+ | 23.89 грн |
| 120+ | 21.11 грн |
| 480+ | 18.97 грн |
| FDC6561AN |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6
Mounting: SMD
Type of transistor: N-MOSFET x2
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Gate charge: 3.2nC
On-state resistance: 152mΩ
Gate-source voltage: ±20V
Power dissipation: 0.96W
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6
Mounting: SMD
Type of transistor: N-MOSFET x2
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Gate charge: 3.2nC
On-state resistance: 152mΩ
Gate-source voltage: ±20V
Power dissipation: 0.96W
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
на замовлення 867 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 59.83 грн |
| 10+ | 39.84 грн |
| 50+ | 27.46 грн |
| 100+ | 23.49 грн |
| 250+ | 19.44 грн |
| 500+ | 17.14 грн |
| NDC7003P |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.34A
Gate charge: 2.2nC
Power dissipation: 0.96W
On-state resistance: 10Ω
Gate-source voltage: ±20V
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.34A
Gate charge: 2.2nC
Power dissipation: 0.96W
On-state resistance: 10Ω
Gate-source voltage: ±20V
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.37 грн |
| 23+ | 18.01 грн |
| 50+ | 14.28 грн |
| 100+ | 12.30 грн |
| 500+ | 8.49 грн |
| 1000+ | 7.38 грн |
| 3000+ | 7.06 грн |
| FDC6321C |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 0.68/-0.46A
Gate charge: 2.3/1.5nC
On-state resistance: 720/1220mΩ
Gate-source voltage: ±8V
Power dissipation: 0.9W
Kind of channel: enhancement
Kind of transistor: complementary pair
Technology: PowerTrench®
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 0.68/-0.46A
Gate charge: 2.3/1.5nC
On-state resistance: 720/1220mΩ
Gate-source voltage: ±8V
Power dissipation: 0.9W
Kind of channel: enhancement
Kind of transistor: complementary pair
Technology: PowerTrench®
Kind of package: reel; tape
на замовлення 1429 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.02 грн |
| 12+ | 33.17 грн |
| 25+ | 29.36 грн |
| 100+ | 23.01 грн |
| 250+ | 19.36 грн |
| 500+ | 18.49 грн |
| FDC6333C |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.5/-2A
Gate charge: 6.6/5.7nC
On-state resistance: 150/220mΩ
Gate-source voltage: ±16/±25V
Power dissipation: 0.96W
Kind of channel: enhancement
Kind of transistor: complementary pair
Technology: PowerTrench®
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SuperSOT-6
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.5/-2A
Gate charge: 6.6/5.7nC
On-state resistance: 150/220mΩ
Gate-source voltage: ±16/±25V
Power dissipation: 0.96W
Kind of channel: enhancement
Kind of transistor: complementary pair
Technology: PowerTrench®
Kind of package: reel; tape
на замовлення 1960 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 52.13 грн |
| 10+ | 44.44 грн |
| 50+ | 34.76 грн |
| 100+ | 28.89 грн |
| 500+ | 17.78 грн |
| 750+ | 15.95 грн |
| 1000+ | 14.84 грн |
| 1500+ | 14.36 грн |
| FDC658AP |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET
Case: SuperSOT-6
Features of semiconductor devices: logic level
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Gate charge: 8.1nC
On-state resistance: 75mΩ
Gate-source voltage: ±25V
Power dissipation: 1.6W
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Mounting: SMD
Type of transistor: P-MOSFET
Case: SuperSOT-6
Features of semiconductor devices: logic level
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Gate charge: 8.1nC
On-state resistance: 75mΩ
Gate-source voltage: ±25V
Power dissipation: 1.6W
Kind of channel: enhancement
Technology: PowerTrench®
Kind of package: reel; tape
на замовлення 2476 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 47.86 грн |
| 12+ | 33.17 грн |
| 50+ | 24.68 грн |
| 100+ | 21.67 грн |
| 250+ | 18.33 грн |
| 500+ | 16.35 грн |
| 1000+ | 15.55 грн |
| MMSZ4685T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Leakage current: 7.5µA
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 3.6V
Manufacturer series: MMSZ4xxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Leakage current: 7.5µA
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 3.6V
Manufacturer series: MMSZ4xxT1G
на замовлення 602 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 59+ | 7.31 грн |
| 81+ | 4.92 грн |
| 110+ | 3.62 грн |
| 126+ | 3.17 грн |
| 500+ | 2.33 грн |
| 588+ | 1.60 грн |
| 1N5375BG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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| 1N5375BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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од. на суму грн.
| MC74HC377ADTR2G |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS; HC; SMD; TSSOP20; HC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Family: HC
Technology: CMOS
Manufacturer series: HC
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS; HC; SMD; TSSOP20; HC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Family: HC
Technology: CMOS
Manufacturer series: HC
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| 1N5374BG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 75V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Case: CASE017AA
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Leakage current: 0.5µA
Power dissipation: 5W
Tolerance: ±5%
Zener voltage: 75V
Manufacturer series: 1N53xxB
Kind of package: bulk
Category: THT Zener diodes
Description: Diode: Zener; 5W; 75V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Case: CASE017AA
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Leakage current: 0.5µA
Power dissipation: 5W
Tolerance: ±5%
Zener voltage: 75V
Manufacturer series: 1N53xxB
Kind of package: bulk
на замовлення 700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 31.62 грн |
| 17+ | 23.57 грн |
| 74+ | 12.70 грн |
| 203+ | 11.98 грн |
| MMDL301T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 1.5pF
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 1.5pF
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од. на суму грн.
| MMDL101T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 7V; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 7V
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Capacitance: 1pF
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 7V; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 7V
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Capacitance: 1pF
товару немає в наявності
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од. на суму грн.
| MMSZ5252BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 2674 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 5.98 грн |
| 99+ | 4.05 грн |
| 137+ | 2.90 грн |
| 160+ | 2.49 грн |
| 200+ | 2.13 грн |
| 500+ | 1.73 грн |
| 1000+ | 1.60 грн |
| NXH450N65L4Q2F2S1G |
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Виробник: ONSEMI
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 450A; PIM40; SiC
Collector current: 450A
Case: PIM40
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Application: for UPS; Inverter
Technology: SiC
Max. off-state voltage: 650V
Topology: NTC thermistor; three-level inverter; single-phase
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 450A; PIM40; SiC
Collector current: 450A
Case: PIM40
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Application: for UPS; Inverter
Technology: SiC
Max. off-state voltage: 650V
Topology: NTC thermistor; three-level inverter; single-phase
Mechanical mounting: screw
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