| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FQPF5N50CYDTU | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 20A; 38W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.9A Pulsed drain current: 20A Power dissipation: 38W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhancement |
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H11F3M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 7.5kV; Uce: 15V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: FET transistor Insulation voltage: 7.5kV Collector-emitter voltage: 15V Case: DIP6 Turn-on time: 45µs Turn-off time: 45µs Max. off-state voltage: 5V Manufacturer series: H11FXM |
на замовлення 723 шт: термін постачання 14-30 дні (днів) |
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| PCRU3060W | ONSEMI |
Category: Transistors - Unclassified Description: PCRU3060W |
на замовлення 12492 шт: термін постачання 14-30 дні (днів) |
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LM2574N-5G | ONSEMI |
 Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 500mA; DIP8; THT Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 5V DC Output current: 0.5A Case: DIP8 Mounting: THT Topology: buck Number of channels: 1 Kind of package: tube |
на замовлення 1550 шт: термін постачання 14-30 дні (днів) |
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LM2574N-ADJG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 1.23...37V DC Output current: 0.5A Case: DIP8 Mounting: THT Topology: buck Number of channels: 1 Kind of package: tube |
на замовлення 167 шт: термін постачання 14-30 дні (днів) |
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| LM2574N-12G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; DIP8; THT; tube Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: DIP8 Mounting: THT Kind of package: tube |
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BD137G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 1.5A; 12W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1.5A Case: TO225 Mounting: THT Frequency: 50MHz Power dissipation: 12W Kind of package: bulk |
на замовлення 113 шт: термін постачання 14-30 дні (днів) |
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BZX79C5V6 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 5.6V; bulk; CASE017AG; single diode; BZX79C Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Mounting: THT Tolerance: ±5% Kind of package: bulk Case: CASE017AG Semiconductor structure: single diode Manufacturer series: BZX79C |
на замовлення 770 шт: термін постачання 14-30 дні (днів) |
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| NVMFD5C466NLT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 52A; Idm: 198A; 19W; DFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 52A Pulsed drain current: 198A Power dissipation: 19W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 7.4mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
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| NVMFD5C466NLWFT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 52A; Idm: 198A; 19W; DFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 52A Pulsed drain current: 198A Power dissipation: 19W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 7.4mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
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NTHL075N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Power dissipation: 74W Case: TO247-3 Gate-source voltage: -5...18V Mounting: THT Gate charge: 61nC Kind of channel: enhancement Kind of package: tube Pulsed drain current: 120A On-state resistance: 68mΩ |
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| NTH4L075N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Power dissipation: 74W Case: TO247-4 Gate-source voltage: -5...18V Mounting: THT Gate charge: 61nC Kind of channel: enhancement Kind of package: tube Features of semiconductor devices: Kelvin terminal Pulsed drain current: 120A On-state resistance: 68mΩ |
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| NVBG075N065SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; N; 650V; 37A; 139W; D2PAK-7 Type of transistor: N-MOSFET Technology: SiC Polarisation: N Drain-source voltage: 650V Drain current: 37A Power dissipation: 139W Case: D2PAK-7 Gate-source voltage: -8...22V Mounting: SMD Gate charge: 59nC Kind of channel: enhancement Application: automotive industry |
на замовлення 2400 шт: термін постачання 14-30 дні (днів) |
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| NXH040F120MNF1PG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 30A Case: PIM22 Topology: H-bridge Electrical mounting: Press-in PCB On-state resistance: 61mΩ Pulsed drain current: 60A Power dissipation: 113W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
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В кошику од. на суму грн. | |||||||||||||||||
| NXH040F120MNF1PTG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 30A Case: PIM22 Topology: H-bridge Electrical mounting: Press-in PCB On-state resistance: 61mΩ Pulsed drain current: 60A Power dissipation: 113W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
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В кошику од. на суму грн. | |||||||||||||||||
| NXH040P120MNF1PG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 30A; PIM18; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 30A Case: PIM18 Topology: MOSFET half-bridge Electrical mounting: Press-in PCB On-state resistance: 61mΩ Pulsed drain current: 60A Power dissipation: 113W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MMBF5485 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 4mA; 0.225W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 4mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
на замовлення 2516 шт: термін постачання 14-30 дні (днів) |
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| 1N5360BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 25V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 25V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB |
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| 1N5360BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 25V; bulk; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 25V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB |
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KSP55TA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Formed Current gain: 50 Mounting: THT Kind of package: Ammo Pack Frequency: 105MHz |
на замовлення 1980 шт: термін постачання 14-30 дні (днів) |
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| SS35 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 50V; 3A; reel,tape; 2.27W Mounting: SMD Load current: 3A Power dissipation: 2.27W Max. forward voltage: 0.75V Max. forward impulse current: 100A Max. off-state voltage: 50V Semiconductor structure: single diode Case: SMC Type of diode: Schottky rectifying Kind of package: reel; tape |
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| 1SS351-TB-E | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SC59; SMD; 5V; 30mA; reel,tape Mounting: SMD Load current: 30mA Max. forward voltage: 0.23V Max. off-state voltage: 5V Semiconductor structure: double series Case: SC59 Type of diode: Schottky switching Kind of package: reel; tape Capacitance: 0.9pF |
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| NSP4201MR6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6V; 500W; unidirectional; TSOP6; Ch: 4; reel,tape Mounting: SMD Kind of package: reel; tape Case: TSOP6 Semiconductor structure: unidirectional Number of channels: 4 Max. off-state voltage: 5V Breakdown voltage: 6V Peak pulse power dissipation: 0.5kW Application: automotive industry; USB Type of diode: TVS array |
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| SZNSP4201MR6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 4; reel,tape Mounting: SMD Kind of package: reel; tape Case: TSOP6 Semiconductor structure: unidirectional Number of channels: 4 Max. off-state voltage: 5V Breakdown voltage: 6V Application: automotive industry Type of diode: TVS array |
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| SZESD5Z3.3T1G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 5V; unidirectional; SOD523; reel,tape Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 5V Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
| NRVB560MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 5A; reel,tape Type of diode: Schottky rectifying Case: DFN5 Mounting: SMD Max. off-state voltage: 60V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.78V Max. load current: 10A Max. forward impulse current: 100A Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
| NRVB560MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 5A; reel,tape Type of diode: Schottky rectifying Case: DFN5 Mounting: SMD Max. off-state voltage: 60V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.78V Max. load current: 10A Max. forward impulse current: 100A Kind of package: reel; tape Application: automotive industry |
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MM74HC132M | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Family: HC Kind of gate: NAND Number of channels: quad; 4 Kind of package: tube Mounting: SMD Kind of input: with Schmitt trigger Operating temperature: -40...85°C Quiescent current: 20µA Number of inputs: 2 Technology: CMOS Supply voltage: 2...6V DC Case: SO14 |
на замовлення 98 шт: термін постачання 14-30 дні (днів) |
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MM74HC132MTC | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Family: HC Kind of gate: NAND Number of channels: quad; 4 Kind of package: tube Mounting: SMD Kind of input: with Schmitt trigger Operating temperature: -40...85°C Delay time: 12ns Number of inputs: 2 Technology: CMOS Supply voltage: 2...6V DC Case: TSSOP14 |
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В кошику од. на суму грн. | ||||||||||||||||
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MM74HC132MTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Family: HC Kind of gate: NAND Number of channels: quad; 4 Kind of package: reel; tape Mounting: SMD Kind of input: with Schmitt trigger Operating temperature: -40...85°C Delay time: 12ns Number of inputs: 2 Technology: CMOS Supply voltage: 2...6V DC Case: TSSOP14 |
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MM74HC132MX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns Type of integrated circuit: digital Family: HC Kind of gate: NAND Number of channels: quad; 4 Kind of package: reel; tape Mounting: SMD Kind of input: with Schmitt trigger Operating temperature: -40...85°C Delay time: 12ns Number of inputs: 2 Technology: CMOS Supply voltage: 2...6V DC Case: SO14 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MJE340G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 20W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 20W Case: TO225 Mounting: THT Kind of package: bulk Current gain: 30...240 |
на замовлення 1672 шт: термін постачання 14-30 дні (днів) |
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MJE350G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 300V; 0.5A; 20W; TO225 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 20W Case: TO225 Current gain: 30...240 Mounting: THT Kind of package: bulk |
на замовлення 699 шт: термін постачання 14-30 дні (днів) |
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74VHC02MTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA Mounting: SMD Operating temperature: -40...85°C Kind of gate: NOR Number of channels: quad; 4 Kind of package: reel; tape Quiescent current: 20µA Number of inputs: 2 Supply voltage: 2...5.5V DC Family: VHC Case: TSSOP14 Type of integrated circuit: digital |
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74VHC02M | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube Mounting: SMD Operating temperature: -40...85°C Kind of gate: NOR Number of channels: quad; 4 Kind of package: tube Quiescent current: 20µA Number of inputs: 2 Supply voltage: 2...5.5V DC Family: VHC Case: SO14 Type of integrated circuit: digital |
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В кошику од. на суму грн. | ||||||||||||||||
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74VHC02MX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; 20uA; VHC Mounting: SMD Operating temperature: -40...85°C Kind of gate: NOR Number of channels: quad; 4 Kind of package: reel; tape Quiescent current: 20µA Number of inputs: 2 Supply voltage: 2...5.5V DC Family: VHC Case: SO14 Type of integrated circuit: digital |
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В кошику од. на суму грн. | ||||||||||||||||
| FGH40T120SQDNL4 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 227W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 221nC Kind of package: tube Features of semiconductor devices: Kelvin terminal |
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| MC33151VDR2G | ONSEMI |
Category: Gates, inverters Description: IC: driver; low-side,gate driver; SOIC8; -1.5÷1.5A; Ch: 2; MOSFET Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SOIC8 Output current: -1.5...1.5A Number of channels: 2 Integrated circuit features: MOSFET Mounting: SMD Operating temperature: -40...150°C Impulse rise time: 14ns Pulse fall time: 16ns Maximum output current: 1.5A Supply voltage: 6.5...18V Power dissipation: 1W |
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74VHC273MTCX | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; TSSOP20; reel,tape Manufacturer series: VHC Trigger: positive-edge-triggered Number of channels: 8 Kind of package: reel; tape Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Supply voltage: 2...5.5V DC Technology: CMOS Kind of integrated circuit: D flip-flop Type of integrated circuit: digital |
на замовлення 1718 шт: термін постачання 14-30 дні (днів) |
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| MM74HC126MTCX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; TSSOP14WB; HC Type of integrated circuit: digital Technology: CMOS Case: TSSOP14WB Family: HC Manufacturer series: HC Number of channels: 4 Kind of package: reel; tape Mounting: SMD Operating temperature: -55...125°C Number of inputs: 2 Kind of output: 3-state Supply voltage: 2...6V DC Kind of integrated circuit: 3-state; buffer |
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| MM74HC126MX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; SOIC14; HC; HC Type of integrated circuit: digital Technology: CMOS Case: SOIC14 Family: HC Manufacturer series: HC Number of channels: 4 Kind of package: reel; tape Mounting: SMD Operating temperature: -55...125°C Number of inputs: 2 Kind of output: 3-state Supply voltage: 2...6V DC Kind of integrated circuit: 3-state; buffer |
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| MC74VHC1G135DBVT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
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| MC74VHC1GT125DFT1G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital Type of integrated circuit: digital |
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FDS9934C | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Technology: PowerTrench® Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 6.5/-5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12/±10V On-state resistance: 50/90mΩ Mounting: SMD Gate charge: 9/12nC Kind of package: reel; tape Kind of channel: enhancement |
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| BCP5310MTWG | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 1A; 1.5W; WDFN3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: WDFN3 Mounting: SMD |
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| BCP5316MTWG | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 1A; 1.5W; WDFN3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: WDFN3 Mounting: SMD |
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| BCP53MTWG | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 1A; 1.5W; WDFN3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: WDFN3 Mounting: SMD |
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74AC244MTCX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Number of channels: 8 Mounting: SMD Case: TSSOP20 Kind of output: 3-state Supply voltage: 2...6V DC Manufacturer series: AC Kind of integrated circuit: buffer; line driver; non-inverting Technology: CMOS Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 40µA |
на замовлення 2654 шт: термін постачання 14-30 дні (днів) |
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74AC244MTC | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Number of channels: 8 Mounting: SMD Case: TSSOP20 Kind of output: 3-state Supply voltage: 2...6V DC Manufacturer series: AC Kind of integrated circuit: buffer; line driver; non-inverting Technology: CMOS Operating temperature: -40...85°C Quiescent current: 40µA |
на замовлення 409 шт: термін постачання 14-30 дні (днів) |
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74AC244SC | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: SO20 Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...6V DC Manufacturer series: AC Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74AC244SCX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: SO20 Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...6V DC Manufacturer series: AC Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74AC244DWR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: SO20 Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...6V DC Manufacturer series: AC Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74AC244DTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 2...6V DC Manufacturer series: AC Quiescent current: 80µA Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FDMS8023S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 49A Pulsed drain current: 100A Power dissipation: 59W Case: Power56 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC74LVXT4066DR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; SO14; 160uA Mounting: SMD Operating temperature: -40...85°C Case: SO14 Type of integrated circuit: analog switch Technology: CMOS Kind of package: reel; tape Kind of integrated circuit: demultiplexer; multiplexer Supply voltage: 2...5.5V DC Quiescent current: 160µA Number of channels: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74LVXT4066DTRG | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; TSSOP14; CMOS Mounting: SMD Operating temperature: -40...85°C Case: TSSOP14 Type of integrated circuit: analog switch Technology: CMOS Kind of package: reel; tape Kind of integrated circuit: demultiplexer; multiplexer Supply voltage: 2...5.5V DC Quiescent current: 160µA Number of channels: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NCP1337DR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; 9÷18.6VDC Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.5A Frequency: 130kHz Mounting: SMD Case: SO7 Number of channels: 1 Operating temperature: 0...125°C Operating voltage: 9...18.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FDP030N06B-F102 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 195A; Idm: 780A; 205W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 195A Pulsed drain current: 780A Power dissipation: 205W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FDMS030N06B | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 400A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTMFD030N06CT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 19A Pulsed drain current: 63A Power dissipation: 11W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 29.7mΩ Mounting: SMD Gate charge: 4.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| FQPF5N50CYDTU |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 20A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Pulsed drain current: 20A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; Idm: 20A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Pulsed drain current: 20A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
од. на суму грн.
| H11F3M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 7.5kV; Uce: 15V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: FET transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 15V
Case: DIP6
Turn-on time: 45µs
Turn-off time: 45µs
Max. off-state voltage: 5V
Manufacturer series: H11FXM
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: FET transistor; Uinsul: 7.5kV; Uce: 15V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: FET transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 15V
Case: DIP6
Turn-on time: 45µs
Turn-off time: 45µs
Max. off-state voltage: 5V
Manufacturer series: H11FXM
на замовлення 723 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 290.13 грн |
| 25+ | 199.74 грн |
| 50+ | 180.44 грн |
| 100+ | 172.05 грн |
| PCRU3060W |
на замовлення 12492 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 188.90 грн |
| LM2574N-5G | |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 500mA; DIP8; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 500mA; DIP8; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
на замовлення 1550 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 112.07 грн |
| 10+ | 76.37 грн |
| 50+ | 66.30 грн |
| 100+ | 62.94 грн |
| 250+ | 58.75 грн |
| 500+ | 57.91 грн |
| LM2574N-ADJG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 500mA
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 0.5A
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 1
Kind of package: tube
на замовлення 167 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 112.07 грн |
| 10+ | 76.37 грн |
| 50+ | 72.18 грн |
| LM2574N-12G | |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; DIP8; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: DIP8
Mounting: THT
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; DIP8; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: DIP8
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BD137G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1.5A; 12W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO225
Mounting: THT
Frequency: 50MHz
Power dissipation: 12W
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1.5A; 12W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO225
Mounting: THT
Frequency: 50MHz
Power dissipation: 12W
Kind of package: bulk
на замовлення 113 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 74.11 грн |
| 13+ | 34.24 грн |
| 100+ | 24.67 грн |
| BZX79C5V6 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; bulk; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; bulk; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
на замовлення 770 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 8.13 грн |
| 95+ | 4.45 грн |
| 159+ | 2.65 грн |
| 193+ | 2.18 грн |
| 250+ | 1.76 грн |
| 500+ | 1.55 грн |
| NVMFD5C466NLT1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 52A; Idm: 198A; 19W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 52A
Pulsed drain current: 198A
Power dissipation: 19W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 52A; Idm: 198A; 19W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 52A
Pulsed drain current: 198A
Power dissipation: 19W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| NVMFD5C466NLWFT1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 52A; Idm: 198A; 19W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 52A
Pulsed drain current: 198A
Power dissipation: 19W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 52A; Idm: 198A; 19W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 52A
Pulsed drain current: 198A
Power dissipation: 19W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| NTHL075N065SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Power dissipation: 74W
Case: TO247-3
Gate-source voltage: -5...18V
Mounting: THT
Gate charge: 61nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 120A
On-state resistance: 68mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Power dissipation: 74W
Case: TO247-3
Gate-source voltage: -5...18V
Mounting: THT
Gate charge: 61nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 120A
On-state resistance: 68mΩ
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В кошику
од. на суму грн.
| NTH4L075N065SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Power dissipation: 74W
Case: TO247-4
Gate-source voltage: -5...18V
Mounting: THT
Gate charge: 61nC
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Pulsed drain current: 120A
On-state resistance: 68mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Power dissipation: 74W
Case: TO247-4
Gate-source voltage: -5...18V
Mounting: THT
Gate charge: 61nC
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Pulsed drain current: 120A
On-state resistance: 68mΩ
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В кошику
од. на суму грн.
| NVBG075N065SC1 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 37A; 139W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 650V
Drain current: 37A
Power dissipation: 139W
Case: D2PAK-7
Gate-source voltage: -8...22V
Mounting: SMD
Gate charge: 59nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 37A; 139W; D2PAK-7
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: N
Drain-source voltage: 650V
Drain current: 37A
Power dissipation: 139W
Case: D2PAK-7
Gate-source voltage: -8...22V
Mounting: SMD
Gate charge: 59nC
Kind of channel: enhancement
Application: automotive industry
на замовлення 2400 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 669.73 грн |
| NXH040F120MNF1PG |
|
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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од. на суму грн.
| NXH040F120MNF1PTG |
|
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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В кошику
од. на суму грн.
| NXH040P120MNF1PG |
|
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 61mΩ
Pulsed drain current: 60A
Power dissipation: 113W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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| MMBF5485 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 4mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 4mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 4mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 4mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
на замовлення 2516 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.56 грн |
| 47+ | 9.06 грн |
| 100+ | 8.14 грн |
| 500+ | 7.72 грн |
| 1000+ | 6.88 грн |
| 1N5360BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
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| 1N5360BG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
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| KSP55TA |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 50
Mounting: THT
Kind of package: Ammo Pack
Frequency: 105MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 50
Mounting: THT
Kind of package: Ammo Pack
Frequency: 105MHz
на замовлення 1980 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 34.35 грн |
| 17+ | 24.76 грн |
| 100+ | 14.02 грн |
| 500+ | 9.40 грн |
| 1000+ | 9.23 грн |
| SS35 |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 50V; 3A; reel,tape; 2.27W
Mounting: SMD
Load current: 3A
Power dissipation: 2.27W
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Max. off-state voltage: 50V
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 50V; 3A; reel,tape; 2.27W
Mounting: SMD
Load current: 3A
Power dissipation: 2.27W
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Max. off-state voltage: 50V
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Kind of package: reel; tape
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| 1SS351-TB-E |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC59; SMD; 5V; 30mA; reel,tape
Mounting: SMD
Load current: 30mA
Max. forward voltage: 0.23V
Max. off-state voltage: 5V
Semiconductor structure: double series
Case: SC59
Type of diode: Schottky switching
Kind of package: reel; tape
Capacitance: 0.9pF
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC59; SMD; 5V; 30mA; reel,tape
Mounting: SMD
Load current: 30mA
Max. forward voltage: 0.23V
Max. off-state voltage: 5V
Semiconductor structure: double series
Case: SC59
Type of diode: Schottky switching
Kind of package: reel; tape
Capacitance: 0.9pF
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| NSP4201MR6T1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 500W; unidirectional; TSOP6; Ch: 4; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Semiconductor structure: unidirectional
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 0.5kW
Application: automotive industry; USB
Type of diode: TVS array
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 500W; unidirectional; TSOP6; Ch: 4; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Semiconductor structure: unidirectional
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 0.5kW
Application: automotive industry; USB
Type of diode: TVS array
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| SZNSP4201MR6T1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 4; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Semiconductor structure: unidirectional
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
Application: automotive industry
Type of diode: TVS array
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 4; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Semiconductor structure: unidirectional
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
Application: automotive industry
Type of diode: TVS array
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| SZESD5Z3.3T1G |
|
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| NRVB560MFST3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. load current: 10A
Max. forward impulse current: 100A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. load current: 10A
Max. forward impulse current: 100A
Kind of package: reel; tape
Application: automotive industry
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| NRVB560MFST1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. load current: 10A
Max. forward impulse current: 100A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. load current: 10A
Max. forward impulse current: 100A
Kind of package: reel; tape
Application: automotive industry
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| MM74HC132M |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Family: HC
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: tube
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Technology: CMOS
Supply voltage: 2...6V DC
Case: SO14
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Family: HC
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: tube
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Technology: CMOS
Supply voltage: 2...6V DC
Case: SO14
на замовлення 98 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.25 грн |
| 19+ | 22.66 грн |
| 25+ | 21.15 грн |
| 55+ | 19.89 грн |
| MM74HC132MTC |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Family: HC
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: tube
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Delay time: 12ns
Number of inputs: 2
Technology: CMOS
Supply voltage: 2...6V DC
Case: TSSOP14
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Family: HC
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: tube
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Delay time: 12ns
Number of inputs: 2
Technology: CMOS
Supply voltage: 2...6V DC
Case: TSSOP14
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| MM74HC132MTCX |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Family: HC
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Delay time: 12ns
Number of inputs: 2
Technology: CMOS
Supply voltage: 2...6V DC
Case: TSSOP14
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Family: HC
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Delay time: 12ns
Number of inputs: 2
Technology: CMOS
Supply voltage: 2...6V DC
Case: TSSOP14
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| MM74HC132MX |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns
Type of integrated circuit: digital
Family: HC
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Delay time: 12ns
Number of inputs: 2
Technology: CMOS
Supply voltage: 2...6V DC
Case: SO14
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; 12ns
Type of integrated circuit: digital
Family: HC
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Delay time: 12ns
Number of inputs: 2
Technology: CMOS
Supply voltage: 2...6V DC
Case: SO14
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| MJE340G | |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 20W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 20W
Case: TO225
Mounting: THT
Kind of package: bulk
Current gain: 30...240
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 20W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 20W
Case: TO225
Mounting: THT
Kind of package: bulk
Current gain: 30...240
на замовлення 1672 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 56.04 грн |
| 13+ | 33.49 грн |
| 20+ | 30.30 грн |
| 100+ | 23.75 грн |
| 200+ | 21.23 грн |
| 250+ | 20.48 грн |
| 500+ | 18.21 грн |
| 1000+ | 17.88 грн |
| MJE350G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 20W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 20W
Case: TO225
Current gain: 30...240
Mounting: THT
Kind of package: bulk
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 20W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 20W
Case: TO225
Current gain: 30...240
Mounting: THT
Kind of package: bulk
на замовлення 699 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 80.44 грн |
| 10+ | 47.00 грн |
| 100+ | 32.73 грн |
| 200+ | 28.79 грн |
| 500+ | 28.03 грн |
| 74VHC02MTCX |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Mounting: SMD
Operating temperature: -40...85°C
Kind of gate: NOR
Number of channels: quad; 4
Kind of package: reel; tape
Quiescent current: 20µA
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: VHC
Case: TSSOP14
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Mounting: SMD
Operating temperature: -40...85°C
Kind of gate: NOR
Number of channels: quad; 4
Kind of package: reel; tape
Quiescent current: 20µA
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: VHC
Case: TSSOP14
Type of integrated circuit: digital
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| 74VHC02M |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube
Mounting: SMD
Operating temperature: -40...85°C
Kind of gate: NOR
Number of channels: quad; 4
Kind of package: tube
Quiescent current: 20µA
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: VHC
Case: SO14
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube
Mounting: SMD
Operating temperature: -40...85°C
Kind of gate: NOR
Number of channels: quad; 4
Kind of package: tube
Quiescent current: 20µA
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: VHC
Case: SO14
Type of integrated circuit: digital
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| 74VHC02MX |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; 20uA; VHC
Mounting: SMD
Operating temperature: -40...85°C
Kind of gate: NOR
Number of channels: quad; 4
Kind of package: reel; tape
Quiescent current: 20µA
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: VHC
Case: SO14
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; 20uA; VHC
Mounting: SMD
Operating temperature: -40...85°C
Kind of gate: NOR
Number of channels: quad; 4
Kind of package: reel; tape
Quiescent current: 20µA
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: VHC
Case: SO14
Type of integrated circuit: digital
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| FGH40T120SQDNL4 |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 227W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 221nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 227W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 221nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
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| MC33151VDR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: driver; low-side,gate driver; SOIC8; -1.5÷1.5A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SOIC8
Output current: -1.5...1.5A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...150°C
Impulse rise time: 14ns
Pulse fall time: 16ns
Maximum output current: 1.5A
Supply voltage: 6.5...18V
Power dissipation: 1W
Category: Gates, inverters
Description: IC: driver; low-side,gate driver; SOIC8; -1.5÷1.5A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SOIC8
Output current: -1.5...1.5A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...150°C
Impulse rise time: 14ns
Pulse fall time: 16ns
Maximum output current: 1.5A
Supply voltage: 6.5...18V
Power dissipation: 1W
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| 74VHC273MTCX |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; TSSOP20; reel,tape
Manufacturer series: VHC
Trigger: positive-edge-triggered
Number of channels: 8
Kind of package: reel; tape
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Technology: CMOS
Kind of integrated circuit: D flip-flop
Type of integrated circuit: digital
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; TSSOP20; reel,tape
Manufacturer series: VHC
Trigger: positive-edge-triggered
Number of channels: 8
Kind of package: reel; tape
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Technology: CMOS
Kind of integrated circuit: D flip-flop
Type of integrated circuit: digital
на замовлення 1718 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 49.71 грн |
| 13+ | 33.15 грн |
| 25+ | 30.38 грн |
| 100+ | 27.53 грн |
| MM74HC126MTCX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; TSSOP14WB; HC
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP14WB
Family: HC
Manufacturer series: HC
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Number of inputs: 2
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of integrated circuit: 3-state; buffer
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; TSSOP14WB; HC
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP14WB
Family: HC
Manufacturer series: HC
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Number of inputs: 2
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of integrated circuit: 3-state; buffer
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| MM74HC126MX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; SOIC14; HC; HC
Type of integrated circuit: digital
Technology: CMOS
Case: SOIC14
Family: HC
Manufacturer series: HC
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Number of inputs: 2
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of integrated circuit: 3-state; buffer
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; SOIC14; HC; HC
Type of integrated circuit: digital
Technology: CMOS
Case: SOIC14
Family: HC
Manufacturer series: HC
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Number of inputs: 2
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of integrated circuit: 3-state; buffer
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| MC74VHC1G135DBVT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
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| MC74VHC1GT125DFT1G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
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| FDS9934C |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 6.5/-5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12/±10V
On-state resistance: 50/90mΩ
Mounting: SMD
Gate charge: 9/12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 6.5/-5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12/±10V
On-state resistance: 50/90mΩ
Mounting: SMD
Gate charge: 9/12nC
Kind of package: reel; tape
Kind of channel: enhancement
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| BCP5310MTWG |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1.5W; WDFN3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: WDFN3
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1.5W; WDFN3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: WDFN3
Mounting: SMD
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| BCP5316MTWG |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1.5W; WDFN3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: WDFN3
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1.5W; WDFN3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: WDFN3
Mounting: SMD
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| BCP53MTWG |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1.5W; WDFN3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: WDFN3
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1.5W; WDFN3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: WDFN3
Mounting: SMD
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| 74AC244MTCX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
Technology: CMOS
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
Technology: CMOS
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 40µA
на замовлення 2654 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 54.23 грн |
| 11+ | 39.87 грн |
| 25+ | 33.07 грн |
| 50+ | 28.79 грн |
| 100+ | 27.78 грн |
| 250+ | 26.69 грн |
| 74AC244MTC |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
Technology: CMOS
Operating temperature: -40...85°C
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
Technology: CMOS
Operating temperature: -40...85°C
Quiescent current: 40µA
на замовлення 409 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 60.56 грн |
| 11+ | 40.28 грн |
| 25+ | 36.42 грн |
| 75+ | 32.90 грн |
| 150+ | 31.05 грн |
| 300+ | 29.63 грн |
| 375+ | 29.21 грн |
| 74AC244SC |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: AC
Technology: CMOS
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: AC
Technology: CMOS
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| 74AC244SCX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: AC
Technology: CMOS
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: AC
Technology: CMOS
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| MC74AC244DWR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: AC
Technology: CMOS
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: AC
Technology: CMOS
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| MC74AC244DTR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: AC
Quiescent current: 80µA
Technology: CMOS
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: AC
Quiescent current: 80µA
Technology: CMOS
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| FDMS8023S |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 59W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 59W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MC74LVXT4066DR2G |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; SO14; 160uA
Mounting: SMD
Operating temperature: -40...85°C
Case: SO14
Type of integrated circuit: analog switch
Technology: CMOS
Kind of package: reel; tape
Kind of integrated circuit: demultiplexer; multiplexer
Supply voltage: 2...5.5V DC
Quiescent current: 160µA
Number of channels: 4
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; SO14; 160uA
Mounting: SMD
Operating temperature: -40...85°C
Case: SO14
Type of integrated circuit: analog switch
Technology: CMOS
Kind of package: reel; tape
Kind of integrated circuit: demultiplexer; multiplexer
Supply voltage: 2...5.5V DC
Quiescent current: 160µA
Number of channels: 4
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| MC74LVXT4066DTRG |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; TSSOP14; CMOS
Mounting: SMD
Operating temperature: -40...85°C
Case: TSSOP14
Type of integrated circuit: analog switch
Technology: CMOS
Kind of package: reel; tape
Kind of integrated circuit: demultiplexer; multiplexer
Supply voltage: 2...5.5V DC
Quiescent current: 160µA
Number of channels: 4
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; TSSOP14; CMOS
Mounting: SMD
Operating temperature: -40...85°C
Case: TSSOP14
Type of integrated circuit: analog switch
Technology: CMOS
Kind of package: reel; tape
Kind of integrated circuit: demultiplexer; multiplexer
Supply voltage: 2...5.5V DC
Quiescent current: 160µA
Number of channels: 4
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| NCP1337DR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; 9÷18.6VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.5A
Frequency: 130kHz
Mounting: SMD
Case: SO7
Number of channels: 1
Operating temperature: 0...125°C
Operating voltage: 9...18.6V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; 9÷18.6VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.5A
Frequency: 130kHz
Mounting: SMD
Case: SO7
Number of channels: 1
Operating temperature: 0...125°C
Operating voltage: 9...18.6V DC
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| FDP030N06B-F102 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; Idm: 780A; 205W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Pulsed drain current: 780A
Power dissipation: 205W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; Idm: 780A; 205W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Pulsed drain current: 780A
Power dissipation: 205W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
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| FDMS030N06B |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTMFD030N06CT1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 63A
Power dissipation: 11W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 63A
Power dissipation: 11W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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