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NCV33035DWR2G ONSEMI mc33035-d.pdf Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brushless motor controller; SO24; 75mA; Ch: 3
Supply voltage: 0...40V DC
Operating temperature: -40...85°C
Topology: H-bridge
Kind of package: reel; tape
Mounting: SMD
Case: SO24
Output current: 75mA
Number of channels: 3
Operating voltage: 10...30V DC
Application: automotive industry
Kind of integrated circuit: brushless motor controller
Type of integrated circuit: driver
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FDD18N20LZ ONSEMI fdd18n20lz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 89W; DPAK3
Case: DPAK3
Mounting: SMD
On-state resistance: 0.125Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 89W
Pulsed drain current: 64A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 30nC
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NSR05F20NXT5G ONSEMI nsr05f20-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0402; SMD; 20V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.43V
Load current: 0.5A
Max. forward impulse current: 1A
Max. off-state voltage: 20V
Case: 0402
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74AC245MTC 74AC245MTC ONSEMI 74ACT245-D.pdf description Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; AC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: AC
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74AC245MTCX 74AC245MTCX ONSEMI 74ACT245-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; AC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: AC
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74AC245SCX 74AC245SCX ONSEMI 74ACT245-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: AC
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MC74AC245DTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6286E54C6A0D3&compId=MC74AC245-D.pdf?ci_sign=c7ddd3b6a12d60351565f9ffe180d90e92f3fd47 Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bidirectional,octal,transceiver; Ch: 8; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; octal; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: AC
Kind of package: reel; tape
Manufacturer series: AC
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SI4435DY SI4435DY ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784EFDF97877B8745&compId=SI4435DY.pdf?ci_sign=2dd861dc7908fb1b7a5ceb72263e5d2fccba210c Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1682 шт:
термін постачання 21-30 дні (днів)
5+89.74 грн
8+55.23 грн
50+42.22 грн
100+38.89 грн
500+36.51 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
NTD2955T4G NTD2955T4G ONSEMI ntd2955-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Pulsed drain current: -18A
Drain current: -12A
Gate charge: 15nC
On-state resistance: 0.18Ω
Power dissipation: 55W
Gate-source voltage: ±20V
Polarisation: unipolar
на замовлення 269 шт:
термін постачання 21-30 дні (днів)
6+84.61 грн
10+53.73 грн
25+47.70 грн
100+40.16 грн
250+36.03 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MMBF5457 MMBF5457 ONSEMI 2N5457-59%2C%20MMBF5457-59.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 3mA; 0.35W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 3mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Gate current: 10mA
Kind of package: reel; tape
на замовлення 2661 шт:
термін постачання 21-30 дні (днів)
27+16.24 грн
30+13.25 грн
92+10.24 грн
251+9.68 грн
Мінімальне замовлення: 27
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MMBF5485 MMBF5485 ONSEMI mmbf5486-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 4mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 4mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Gate current: 10mA
Kind of package: reel; tape
на замовлення 2856 шт:
термін постачання 21-30 дні (днів)
42+10.26 грн
46+8.65 грн
100+8.09 грн
139+6.67 грн
382+6.35 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
MMBF5484 MMBF5484 ONSEMI mmbf5486-d.pdf FAIRS30486-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 1mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 1mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
на замовлення 2872 шт:
термін постачання 21-30 дні (днів)
46+9.40 грн
51+7.86 грн
100+7.30 грн
250+6.98 грн
500+6.27 грн
1000+5.95 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
MCH3914-7-TL-H ONSEMI ena1511-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.3W; MCPH3; Igt: 5mA
Kind of package: reel; tape
Mounting: SMD
Case: MCPH3
Type of transistor: N-JFET
Polarisation: unipolar
Gate-source voltage: -15V
Gate current: 5mA
Drain current: 16mA
Power dissipation: 0.3W
Drain-source voltage: 15V
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MCH3914-8-TL-H ONSEMI ena1511-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 25mA; 0.3W; MCPH3; Igt: 5mA
Kind of package: reel; tape
Mounting: SMD
Case: MCPH3
Type of transistor: N-JFET
Polarisation: unipolar
Gate-source voltage: -15V
Gate current: 5mA
Drain current: 25mA
Power dissipation: 0.3W
Drain-source voltage: 15V
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IRFM120ATF ONSEMI irfm120a-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.3A; Idm: 18A; 2.4W; SOT223
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Gate charge: 16nC
On-state resistance: 0.2Ω
Drain current: 2.3A
Power dissipation: 2.4W
Pulsed drain current: 18A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: enhancement
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NTB110N65S3HF ONSEMI ntb110n65s3hf-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
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MC33275ST-3.3T3G MC33275ST-3.3T3G ONSEMI mc33275-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Input voltage: 0...20V
Operating temperature: -40...125°C
Tolerance: ±1%
Voltage drop: 1.1V
Manufacturer series: MC33275
на замовлення 2881 шт:
термін постачання 21-30 дні (днів)
14+30.77 грн
17+24.28 грн
25+22.14 грн
100+19.36 грн
250+18.49 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
NTB150N65S3HF ONSEMI ntb150n65s3hf-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 192W; D2PAK
Type of transistor: N-MOSFET
Power dissipation: 192W
Case: D2PAK
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
On-state resistance: 0.15Ω
Drain current: 24A
Gate-source voltage: ±30V
Pulsed drain current: 60A
Drain-source voltage: 650V
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NTD250N65S3H ONSEMI ntd250n65s3h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 36A; 106W; DPAK
Type of transistor: N-MOSFET
Power dissipation: 106W
Case: DPAK
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
On-state resistance: 0.25Ω
Drain current: 13A
Gate-source voltage: ±30V
Pulsed drain current: 36A
Drain-source voltage: 650V
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FDD86367-F085 ONSEMI fdd86367_f085-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK3
On-state resistance: 4.2mΩ
Case: DPAK3
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 227W
Gate charge: 68nC
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
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MMBZ15VALT1G MMBZ15VALT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEDED6F98B88AA14&compId=MMBZ_ser.PDF?ci_sign=1f35ddf42140d92ef46c86e862bfcafdd39158da Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: common anode; double
Leakage current: 50nA
Max. forward impulse current: 1.9A
Max. off-state voltage: 12V
Breakdown voltage: 15V
Peak pulse power dissipation: 40W
Version: ESD
на замовлення 397 шт:
термін постачання 21-30 дні (днів)
50+8.55 грн
59+6.75 грн
70+5.75 грн
80+5.00 грн
87+4.60 грн
100+4.32 грн
250+3.51 грн
397+2.36 грн
Мінімальне замовлення: 50
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NTBG040N120SC1 ONSEMI ntbg040n120sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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TIP36CG TIP36CG ONSEMI tip35a-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 25A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
2+255.54 грн
10+203.16 грн
20+185.70 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TIP36AG ONSEMI tip35a-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 25A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 60 шт:
термін постачання 21-30 дні (днів)
2+222.21 грн
10+170.62 грн
30+146.02 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NTD280N60S5Z ONSEMI ntd280n60s5z-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 39A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 17.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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2SA2029M3T5G ONSEMI 2sa2029m3-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
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BD441G BD441G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBB262853982469&compId=BD441G.PDF?ci_sign=feef31d5114e76b1a74dc9c48c3fc51112bdc7de Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 4A
Case: TO225
Mounting: THT
Frequency: 3MHz
Kind of package: bulk
Current gain: 40...475
Power dissipation: 36W
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MM3Z9V1T1G MM3Z9V1T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
на замовлення 3153 шт:
термін постачання 21-30 дні (днів)
72+5.98 грн
105+3.81 грн
160+2.49 грн
193+2.06 грн
500+1.36 грн
1000+1.20 грн
Мінімальне замовлення: 72
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MC14014BDG MC14014BDG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278D7592C0D3&compId=MC14014B-D.pdf?ci_sign=ed9ec2fb77e360863287d3d74a3ad3ba7ef56d77 Category: Shift registers
Description: IC: digital; 8bit,shift register; Ch: 1; CMOS; SMD; SOIC16; HEF4000B
Kind of integrated circuit: 8bit; shift register
Case: SOIC16
Family: HEF4000B
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Kind of package: tube
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 3...18V DC
на замовлення 480 шт:
термін постачання 21-30 дні (днів)
15+29.91 грн
21+19.68 грн
25+17.86 грн
48+16.82 грн
96+15.95 грн
144+15.48 грн
288+14.84 грн
Мінімальне замовлення: 15
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MC14014BDR2G MC14014BDR2G ONSEMI mc14014b-d.pdf Category: Shift registers
Description: IC: digital; 8bit,static shift register; CMOS; SMD; SO16; -40÷85°C
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Kind of integrated circuit: 8bit; static shift register
Case: SO16
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
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NTMFS08N2D5C ONSEMI ntmfs08n2d5c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; Idm: 823A; 138W; PQFN8
Kind of package: reel; tape
Case: PQFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 60nC
On-state resistance: 2.7mΩ
Power dissipation: 138W
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 166A
Pulsed drain current: 823A
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NCP1256ASN100T1G ONSEMI ncp1256-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Number of channels: 1
Operating voltage: 8.9...26V DC
Frequency: 93...107kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Type of integrated circuit: PMIC
Mounting: SMD
Case: TSOP6
Operating temperature: -40...125°C
Output current: -0.5...0.5A
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FDD390N15ALZ ONSEMI fdd390n15alz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 26A; Idm: 104A; 63W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 26A
Pulsed drain current: 104A
Power dissipation: 63W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 17.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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2SA1416S-TD-E
+1
 		2SA1416S-TD-E ONSEMI 2sa1416-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89
Case: SOT89
Type of transistor: PNP
Mounting: SMD
Collector current: 1A
Power dissipation: 0.5W
Collector-emitter voltage: 100V
Current gain: 140...280
Polarisation: bipolar
Kind of package: reel; tape
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2SA1416T-TD-E ONSEMI 2sa1416-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89
Case: SOT89
Type of transistor: PNP
Mounting: SMD
Collector current: 1A
Power dissipation: 0.5W
Collector-emitter voltage: 100V
Current gain: 200...400
Polarisation: bipolar
Kind of package: reel; tape
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BC858BWT1G BC858BWT1G ONSEMI bc856bwt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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NTMFS024N06CT1G ONSEMI NTMFS024N06C-D.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 158A; 14W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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MC100EPT21DTG MC100EPT21DTG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D1F2FA05820&compId=MC100EPT21DG.pdf?ci_sign=bbac4b3dc4fd609d46320fc57931bc598e2515ea Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 2; OUT: 1
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Number of outputs: 1
Manufacturer series: 100EPT
Number of channels: 1
Number of inputs: 2
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MC100EPT21DTR2G MC100EPT21DTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D1F2FA05820&compId=MC100EPT21DG.pdf?ci_sign=bbac4b3dc4fd609d46320fc57931bc598e2515ea Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of outputs: 1
Manufacturer series: 100EPT
Number of channels: 1
Number of inputs: 2
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MC100EPT22DTG MC100EPT22DTG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5CD207815820&compId=MC100EPT22DG.pdf?ci_sign=f8b8d457c18ec6477cb5aa3fc5cd35483d9e9d15 Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: LVCMOS to LVPECL translator; LVTTL to LVPECL translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Number of outputs: 2
Manufacturer series: 100EPT
Number of channels: 2
Number of inputs: 4
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MC100EPT20DG MC100EPT20DG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D1F2F9E3820&compId=MC100EPT20DG.pdf?ci_sign=776bc14268a11725753956ce1648e3683e4e1278 Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 2; OUT: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; LVCMOS to LVPECL translator; LVTTL to LVPECL translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of outputs: 1
Manufacturer series: 100EPT
Number of channels: 1
Number of inputs: 2
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MC100EPT23MNR4G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5CD20782F820&compId=MC100EPT23DG.pdf?ci_sign=aa3585cd357fd961cb5322f8d751789c15fa55ac Category: Level translators
Description: IC: digital; Ch: 2; SMD; VDFN8; -40÷85°C; reel,tape; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Mounting: SMD
Case: VDFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of outputs: 2
Manufacturer series: 100EPT
Number of channels: 2
Number of inputs: 4
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NTMFS015N10MCLT1G ONSEMI ntmfs015n10mcl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 54A; Idm: 423A; 79W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 54A
Pulsed drain current: 423A
Power dissipation: 79W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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MC100EPT21DG MC100EPT21DG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D1F2FA05820&compId=MC100EPT21DG.pdf?ci_sign=bbac4b3dc4fd609d46320fc57931bc598e2515ea Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 2; OUT: 1
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of outputs: 1
Manufacturer series: 100EPT
Number of channels: 1
Number of inputs: 2
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MC100EPT21DR2G MC100EPT21DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D1F2FA05820&compId=MC100EPT21DG.pdf?ci_sign=bbac4b3dc4fd609d46320fc57931bc598e2515ea Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of outputs: 1
Manufacturer series: 100EPT
Number of channels: 1
Number of inputs: 2
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MC100EPT21MNR4G MC100EPT21MNR4G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D1F2FA05820&compId=MC100EPT21DG.pdf?ci_sign=bbac4b3dc4fd609d46320fc57931bc598e2515ea Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; DFN8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: DFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of outputs: 1
Manufacturer series: 100EPT
Number of channels: 1
Number of inputs: 2
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MC100EPT23DG MC100EPT23DG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5CD20782F820&compId=MC100EPT23DG.pdf?ci_sign=aa3585cd357fd961cb5322f8d751789c15fa55ac Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of outputs: 2
Manufacturer series: 100EPT
Number of channels: 2
Number of inputs: 4
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MC100EPT23DTG MC100EPT23DTG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5CD20782F820&compId=MC100EPT23DG.pdf?ci_sign=aa3585cd357fd961cb5322f8d751789c15fa55ac Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Number of outputs: 2
Manufacturer series: 100EPT
Number of channels: 2
Number of inputs: 4
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MC100EPT23DTR2G MC100EPT23DTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5CD20782F820&compId=MC100EPT23DG.pdf?ci_sign=aa3585cd357fd961cb5322f8d751789c15fa55ac Category: Level translators
Description: IC: digital; Ch: 2; SMD; TSSOP8; -40÷85°C; reel,tape; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of outputs: 2
Manufacturer series: 100EPT
Number of channels: 2
Number of inputs: 4
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2N7002 2N7002 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84E58CC03277C0D2&compId=2N7000_2N7002_NDS7002A.PDF?ci_sign=0fd71bfe4fa8b72f11e37dab9fdebe94573526a9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FSUSB42UMX ONSEMI fsusb42-d.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; UMLP10; 2.4÷4.4VDC; OUT: DPDT
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Number of channels: 2
Case: UMLP10
Supply voltage: 2.4...4.4V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: DPDT
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MRA4004T3G MRA4004T3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7EC99F014E1DE27&compId=MRA4006T3G-DTE.PDF?ci_sign=07e05b91c4facf205775ca0b12034b0218906c4f Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.18V; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Load current: 1A
Max. forward voltage: 1.18V
Max. load current: 30A
Max. off-state voltage: 0.4kV
Semiconductor structure: single diode
на замовлення 3963 шт:
термін постачання 21-30 дні (днів)
28+15.38 грн
39+10.32 грн
50+8.25 грн
100+7.41 грн
231+4.04 грн
635+3.82 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
NVTFS5116PLTAG NVTFS5116PLTAG ONSEMI nvtfs5116pl-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10A; 1.6W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -10A
Power dissipation: 1.6W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1184 шт:
термін постачання 21-30 дні (днів)
7+70.94 грн
10+49.76 грн
26+37.14 грн
70+35.08 грн
200+33.73 грн
Мінімальне замовлення: 7
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NCP308MT300TBG ONSEMI ncp308-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Supply voltage: 1.6...5.5V DC
Operating temperature: -40...125°C
Case: WDFN6
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Type of integrated circuit: supervisor circuit
DC supply current: 6µA
Maximum output current: 5mA
Number of channels: 1
Threshold on-voltage: 2.79V
Active logical level: low
Kind of RESET output: open drain
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MOC3023M MOC3023M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDB84C150D1DDE800C7&compId=MOC3020M-ONS.PDF?ci_sign=389ef2e64224fc06bef592ec96121394b0062cba Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 400V; DIP6; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Trigger current: 5mA
Mounting: THT
Output voltage: 400V
Manufacturer series: MOC302XM
на замовлення 382 шт:
термін постачання 21-30 дні (днів)
10+44.44 грн
15+28.25 грн
50+23.01 грн
Мінімальне замовлення: 10
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FDH45N50F-F133 FDH45N50F-F133 ONSEMI fdh45n50f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; Idm: 180A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 62 шт:
термін постачання 21-30 дні (днів)
1+429.03 грн
5+335.69 грн
10+299.98 грн
30+297.60 грн
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1SMB5923BT3G 1SMB5923BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 8.2V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Case: SMB
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 8.2V
Manufacturer series: 1SMB59xxBT3G
на замовлення 2996 шт:
термін постачання 21-30 дні (днів)
27+16.24 грн
32+12.70 грн
35+11.35 грн
41+9.84 грн
50+8.65 грн
100+7.70 грн
129+7.30 грн
353+6.90 грн
Мінімальне замовлення: 27
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1SMB5942BT3G 1SMB5942BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 51V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Case: SMB
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 51V
Manufacturer series: 1SMB59xxBT3G
на замовлення 2273 шт:
термін постачання 21-30 дні (днів)
21+20.51 грн
29+13.81 грн
34+11.98 грн
50+10.79 грн
100+9.68 грн
118+7.94 грн
323+7.54 грн
500+7.30 грн
1000+7.22 грн
Мінімальне замовлення: 21
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MM3Z3V0T1G MM3Z3V0T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
на замовлення 1890 шт:
термін постачання 21-30 дні (днів)
59+7.35 грн
85+4.68 грн
128+3.11 грн
154+2.58 грн
500+1.79 грн
594+1.57 грн
1500+1.48 грн
Мінімальне замовлення: 59
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BZX84C3V0LT1G BZX84C3V0LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3V; SMD; reel,tape; SOT23; single diode; 10uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: BZX84C
на замовлення 2316 шт:
термін постачання 21-30 дні (днів)
53+8.11 грн
79+5.08 грн
95+4.21 грн
154+2.59 грн
186+2.14 грн
500+1.47 грн
838+1.11 грн
2305+1.05 грн
Мінімальне замовлення: 53
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NCV33035DWR2G mc33035-d.pdf
Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brushless motor controller; SO24; 75mA; Ch: 3
Supply voltage: 0...40V DC
Operating temperature: -40...85°C
Topology: H-bridge
Kind of package: reel; tape
Mounting: SMD
Case: SO24
Output current: 75mA
Number of channels: 3
Operating voltage: 10...30V DC
Application: automotive industry
Kind of integrated circuit: brushless motor controller
Type of integrated circuit: driver
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FDD18N20LZ fdd18n20lz-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 89W; DPAK3
Case: DPAK3
Mounting: SMD
On-state resistance: 0.125Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 89W
Pulsed drain current: 64A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 30nC
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NSR05F20NXT5G nsr05f20-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0402; SMD; 20V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.43V
Load current: 0.5A
Max. forward impulse current: 1A
Max. off-state voltage: 20V
Case: 0402
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74AC245MTC description 74ACT245-D.pdf
74AC245MTC
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; AC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: AC
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74AC245MTCX 74ACT245-D.pdf
74AC245MTCX
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; AC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: AC
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74AC245SCX 74ACT245-D.pdf
74AC245SCX
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: AC
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MC74AC245DTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6286E54C6A0D3&compId=MC74AC245-D.pdf?ci_sign=c7ddd3b6a12d60351565f9ffe180d90e92f3fd47
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bidirectional,octal,transceiver; Ch: 8; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; octal; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: AC
Kind of package: reel; tape
Manufacturer series: AC
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SI4435DY pVersion=0046&contRep=ZT&docId=005056AB752F1EE784EFDF97877B8745&compId=SI4435DY.pdf?ci_sign=2dd861dc7908fb1b7a5ceb72263e5d2fccba210c
SI4435DY
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1682 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+89.74 грн
8+55.23 грн
50+42.22 грн
100+38.89 грн
500+36.51 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
NTD2955T4G ntd2955-d.pdf
NTD2955T4G
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -60V
Pulsed drain current: -18A
Drain current: -12A
Gate charge: 15nC
On-state resistance: 0.18Ω
Power dissipation: 55W
Gate-source voltage: ±20V
Polarisation: unipolar
на замовлення 269 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+84.61 грн
10+53.73 грн
25+47.70 грн
100+40.16 грн
250+36.03 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MMBF5457 2N5457-59%2C%20MMBF5457-59.pdf
MMBF5457
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 3mA; 0.35W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 3mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Gate current: 10mA
Kind of package: reel; tape
на замовлення 2661 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
27+16.24 грн
30+13.25 грн
92+10.24 грн
251+9.68 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
MMBF5485 mmbf5486-d.pdf
MMBF5485
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 4mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 4mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Gate current: 10mA
Kind of package: reel; tape
на замовлення 2856 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
42+10.26 грн
46+8.65 грн
100+8.09 грн
139+6.67 грн
382+6.35 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
MMBF5484 mmbf5486-d.pdf FAIRS30486-1.pdf?t.download=true&u=5oefqw
MMBF5484
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 1mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 1mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
на замовлення 2872 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
46+9.40 грн
51+7.86 грн
100+7.30 грн
250+6.98 грн
500+6.27 грн
1000+5.95 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
MCH3914-7-TL-H ena1511-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.3W; MCPH3; Igt: 5mA
Kind of package: reel; tape
Mounting: SMD
Case: MCPH3
Type of transistor: N-JFET
Polarisation: unipolar
Gate-source voltage: -15V
Gate current: 5mA
Drain current: 16mA
Power dissipation: 0.3W
Drain-source voltage: 15V
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MCH3914-8-TL-H ena1511-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 25mA; 0.3W; MCPH3; Igt: 5mA
Kind of package: reel; tape
Mounting: SMD
Case: MCPH3
Type of transistor: N-JFET
Polarisation: unipolar
Gate-source voltage: -15V
Gate current: 5mA
Drain current: 25mA
Power dissipation: 0.3W
Drain-source voltage: 15V
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IRFM120ATF irfm120a-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.3A; Idm: 18A; 2.4W; SOT223
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Gate charge: 16nC
On-state resistance: 0.2Ω
Drain current: 2.3A
Power dissipation: 2.4W
Pulsed drain current: 18A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: enhancement
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NTB110N65S3HF ntb110n65s3hf-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
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MC33275ST-3.3T3G mc33275-d.pdf
MC33275ST-3.3T3G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Input voltage: 0...20V
Operating temperature: -40...125°C
Tolerance: ±1%
Voltage drop: 1.1V
Manufacturer series: MC33275
на замовлення 2881 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+30.77 грн
17+24.28 грн
25+22.14 грн
100+19.36 грн
250+18.49 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
NTB150N65S3HF ntb150n65s3hf-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 192W; D2PAK
Type of transistor: N-MOSFET
Power dissipation: 192W
Case: D2PAK
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
On-state resistance: 0.15Ω
Drain current: 24A
Gate-source voltage: ±30V
Pulsed drain current: 60A
Drain-source voltage: 650V
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NTD250N65S3H ntd250n65s3h-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 36A; 106W; DPAK
Type of transistor: N-MOSFET
Power dissipation: 106W
Case: DPAK
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
On-state resistance: 0.25Ω
Drain current: 13A
Gate-source voltage: ±30V
Pulsed drain current: 36A
Drain-source voltage: 650V
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FDD86367-F085 fdd86367_f085-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK3
On-state resistance: 4.2mΩ
Case: DPAK3
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 227W
Gate charge: 68nC
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
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MMBZ15VALT1G pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEDED6F98B88AA14&compId=MMBZ_ser.PDF?ci_sign=1f35ddf42140d92ef46c86e862bfcafdd39158da
MMBZ15VALT1G
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: common anode; double
Leakage current: 50nA
Max. forward impulse current: 1.9A
Max. off-state voltage: 12V
Breakdown voltage: 15V
Peak pulse power dissipation: 40W
Version: ESD
на замовлення 397 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.55 грн
59+6.75 грн
70+5.75 грн
80+5.00 грн
87+4.60 грн
100+4.32 грн
250+3.51 грн
397+2.36 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
NTBG040N120SC1 ntbg040n120sc1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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TIP36CG tip35a-d.pdf
TIP36CG
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 25A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+255.54 грн
10+203.16 грн
20+185.70 грн
Мінімальне замовлення: 2
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TIP36AG tip35a-d.pdf
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 25A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 60 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+222.21 грн
10+170.62 грн
30+146.02 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NTD280N60S5Z ntd280n60s5z-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 39A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 17.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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2SA2029M3T5G 2sa2029m3-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
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BD441G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBB262853982469&compId=BD441G.PDF?ci_sign=feef31d5114e76b1a74dc9c48c3fc51112bdc7de
BD441G
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 4A
Case: TO225
Mounting: THT
Frequency: 3MHz
Kind of package: bulk
Current gain: 40...475
Power dissipation: 36W
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MM3Z9V1T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d
MM3Z9V1T1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
на замовлення 3153 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
72+5.98 грн
105+3.81 грн
160+2.49 грн
193+2.06 грн
500+1.36 грн
1000+1.20 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
MC14014BDG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6278D7592C0D3&compId=MC14014B-D.pdf?ci_sign=ed9ec2fb77e360863287d3d74a3ad3ba7ef56d77
MC14014BDG
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; 8bit,shift register; Ch: 1; CMOS; SMD; SOIC16; HEF4000B
Kind of integrated circuit: 8bit; shift register
Case: SOIC16
Family: HEF4000B
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Kind of package: tube
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 3...18V DC
на замовлення 480 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+29.91 грн
21+19.68 грн
25+17.86 грн
48+16.82 грн
96+15.95 грн
144+15.48 грн
288+14.84 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
MC14014BDR2G mc14014b-d.pdf
MC14014BDR2G
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; 8bit,static shift register; CMOS; SMD; SO16; -40÷85°C
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Kind of integrated circuit: 8bit; static shift register
Case: SO16
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
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NTMFS08N2D5C ntmfs08n2d5c-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; Idm: 823A; 138W; PQFN8
Kind of package: reel; tape
Case: PQFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 60nC
On-state resistance: 2.7mΩ
Power dissipation: 138W
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 166A
Pulsed drain current: 823A
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NCP1256ASN100T1G ncp1256-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Number of channels: 1
Operating voltage: 8.9...26V DC
Frequency: 93...107kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Type of integrated circuit: PMIC
Mounting: SMD
Case: TSOP6
Operating temperature: -40...125°C
Output current: -0.5...0.5A
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FDD390N15ALZ fdd390n15alz-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 26A; Idm: 104A; 63W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 26A
Pulsed drain current: 104A
Power dissipation: 63W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 17.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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2SA1416S-TD-E 2sa1416-d.pdf
2SA1416S-TD-E
+1
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89
Case: SOT89
Type of transistor: PNP
Mounting: SMD
Collector current: 1A
Power dissipation: 0.5W
Collector-emitter voltage: 100V
Current gain: 140...280
Polarisation: bipolar
Kind of package: reel; tape
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2SA1416T-TD-E 2sa1416-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89
Case: SOT89
Type of transistor: PNP
Mounting: SMD
Collector current: 1A
Power dissipation: 0.5W
Collector-emitter voltage: 100V
Current gain: 200...400
Polarisation: bipolar
Kind of package: reel; tape
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BC858BWT1G bc856bwt1-d.pdf
BC858BWT1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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NTMFS024N06CT1G NTMFS024N06C-D.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 158A; 14W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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MC100EPT21DTG pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D1F2FA05820&compId=MC100EPT21DG.pdf?ci_sign=bbac4b3dc4fd609d46320fc57931bc598e2515ea
MC100EPT21DTG
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 2; OUT: 1
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Number of outputs: 1
Manufacturer series: 100EPT
Number of channels: 1
Number of inputs: 2
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MC100EPT21DTR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D1F2FA05820&compId=MC100EPT21DG.pdf?ci_sign=bbac4b3dc4fd609d46320fc57931bc598e2515ea
MC100EPT21DTR2G
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of outputs: 1
Manufacturer series: 100EPT
Number of channels: 1
Number of inputs: 2
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MC100EPT22DTG pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5CD207815820&compId=MC100EPT22DG.pdf?ci_sign=f8b8d457c18ec6477cb5aa3fc5cd35483d9e9d15
MC100EPT22DTG
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: LVCMOS to LVPECL translator; LVTTL to LVPECL translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Number of outputs: 2
Manufacturer series: 100EPT
Number of channels: 2
Number of inputs: 4
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MC100EPT20DG pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D1F2F9E3820&compId=MC100EPT20DG.pdf?ci_sign=776bc14268a11725753956ce1648e3683e4e1278
MC100EPT20DG
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 2; OUT: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; LVCMOS to LVPECL translator; LVTTL to LVPECL translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of outputs: 1
Manufacturer series: 100EPT
Number of channels: 1
Number of inputs: 2
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MC100EPT23MNR4G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5CD20782F820&compId=MC100EPT23DG.pdf?ci_sign=aa3585cd357fd961cb5322f8d751789c15fa55ac
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; SMD; VDFN8; -40÷85°C; reel,tape; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Mounting: SMD
Case: VDFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of outputs: 2
Manufacturer series: 100EPT
Number of channels: 2
Number of inputs: 4
товару немає в наявності
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NTMFS015N10MCLT1G ntmfs015n10mcl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 54A; Idm: 423A; 79W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 54A
Pulsed drain current: 423A
Power dissipation: 79W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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MC100EPT21DG pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D1F2FA05820&compId=MC100EPT21DG.pdf?ci_sign=bbac4b3dc4fd609d46320fc57931bc598e2515ea
MC100EPT21DG
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 2; OUT: 1
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of outputs: 1
Manufacturer series: 100EPT
Number of channels: 1
Number of inputs: 2
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MC100EPT21DR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D1F2FA05820&compId=MC100EPT21DG.pdf?ci_sign=bbac4b3dc4fd609d46320fc57931bc598e2515ea
MC100EPT21DR2G
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; SO8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of outputs: 1
Manufacturer series: 100EPT
Number of channels: 1
Number of inputs: 2
товару немає в наявності
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MC100EPT21MNR4G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D1F2FA05820&compId=MC100EPT21DG.pdf?ci_sign=bbac4b3dc4fd609d46320fc57931bc598e2515ea
MC100EPT21MNR4G
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; DFN8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: DFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of outputs: 1
Manufacturer series: 100EPT
Number of channels: 1
Number of inputs: 2
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MC100EPT23DG pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5CD20782F820&compId=MC100EPT23DG.pdf?ci_sign=aa3585cd357fd961cb5322f8d751789c15fa55ac
MC100EPT23DG
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of outputs: 2
Manufacturer series: 100EPT
Number of channels: 2
Number of inputs: 4
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MC100EPT23DTG pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5CD20782F820&compId=MC100EPT23DG.pdf?ci_sign=aa3585cd357fd961cb5322f8d751789c15fa55ac
MC100EPT23DTG
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Number of outputs: 2
Manufacturer series: 100EPT
Number of channels: 2
Number of inputs: 4
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MC100EPT23DTR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5CD20782F820&compId=MC100EPT23DG.pdf?ci_sign=aa3585cd357fd961cb5322f8d751789c15fa55ac
MC100EPT23DTR2G
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; SMD; TSSOP8; -40÷85°C; reel,tape; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of outputs: 2
Manufacturer series: 100EPT
Number of channels: 2
Number of inputs: 4
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2N7002 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84E58CC03277C0D2&compId=2N7000_2N7002_NDS7002A.PDF?ci_sign=0fd71bfe4fa8b72f11e37dab9fdebe94573526a9
2N7002
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
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FSUSB42UMX fsusb42-d.pdf
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; UMLP10; 2.4÷4.4VDC; OUT: DPDT
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Number of channels: 2
Case: UMLP10
Supply voltage: 2.4...4.4V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: DPDT
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MRA4004T3G pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7EC99F014E1DE27&compId=MRA4006T3G-DTE.PDF?ci_sign=07e05b91c4facf205775ca0b12034b0218906c4f
MRA4004T3G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.18V; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Load current: 1A
Max. forward voltage: 1.18V
Max. load current: 30A
Max. off-state voltage: 0.4kV
Semiconductor structure: single diode
на замовлення 3963 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
28+15.38 грн
39+10.32 грн
50+8.25 грн
100+7.41 грн
231+4.04 грн
635+3.82 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
NVTFS5116PLTAG nvtfs5116pl-d.pdf
NVTFS5116PLTAG
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10A; 1.6W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -10A
Power dissipation: 1.6W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1184 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+70.94 грн
10+49.76 грн
26+37.14 грн
70+35.08 грн
200+33.73 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
NCP308MT300TBG ncp308-d.pdf
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); WDFN6
Supply voltage: 1.6...5.5V DC
Operating temperature: -40...125°C
Case: WDFN6
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Type of integrated circuit: supervisor circuit
DC supply current: 6µA
Maximum output current: 5mA
Number of channels: 1
Threshold on-voltage: 2.79V
Active logical level: low
Kind of RESET output: open drain
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MOC3023M pVersion=0046&contRep=ZT&docId=005056AB90B41EDB84C150D1DDE800C7&compId=MOC3020M-ONS.PDF?ci_sign=389ef2e64224fc06bef592ec96121394b0062cba
MOC3023M
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 400V; DIP6; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Trigger current: 5mA
Mounting: THT
Output voltage: 400V
Manufacturer series: MOC302XM
на замовлення 382 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+44.44 грн
15+28.25 грн
50+23.01 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
FDH45N50F-F133 fdh45n50f-d.pdf
FDH45N50F-F133
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; Idm: 180A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 62 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+429.03 грн
5+335.69 грн
10+299.98 грн
30+297.60 грн
В кошику  од. на суму  грн.
1SMB5923BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
1SMB5923BT3G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 8.2V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Case: SMB
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 8.2V
Manufacturer series: 1SMB59xxBT3G
на замовлення 2996 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
27+16.24 грн
32+12.70 грн
35+11.35 грн
41+9.84 грн
50+8.65 грн
100+7.70 грн
129+7.30 грн
353+6.90 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
1SMB5942BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
1SMB5942BT3G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 51V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Case: SMB
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 51V
Manufacturer series: 1SMB59xxBT3G
на замовлення 2273 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
21+20.51 грн
29+13.81 грн
34+11.98 грн
50+10.79 грн
100+9.68 грн
118+7.94 грн
323+7.54 грн
500+7.30 грн
1000+7.22 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
MM3Z3V0T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d
MM3Z3V0T1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
на замовлення 1890 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
59+7.35 грн
85+4.68 грн
128+3.11 грн
154+2.58 грн
500+1.79 грн
594+1.57 грн
1500+1.48 грн
Мінімальне замовлення: 59
В кошику  од. на суму  грн.
BZX84C3V0LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
BZX84C3V0LT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3V; SMD; reel,tape; SOT23; single diode; 10uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: BZX84C
на замовлення 2316 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
53+8.11 грн
79+5.08 грн
95+4.21 грн
154+2.59 грн
186+2.14 грн
500+1.47 грн
838+1.11 грн
2305+1.05 грн
Мінімальне замовлення: 53
В кошику  од. на суму  грн.
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